JPH08979B2 - Plasma CVD method and apparatus - Google Patents
Plasma CVD method and apparatusInfo
- Publication number
- JPH08979B2 JPH08979B2 JP3323326A JP32332691A JPH08979B2 JP H08979 B2 JPH08979 B2 JP H08979B2 JP 3323326 A JP3323326 A JP 3323326A JP 32332691 A JP32332691 A JP 32332691A JP H08979 B2 JPH08979 B2 JP H08979B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- film
- pulse modulation
- high frequency
- μsec
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005268 plasma chemical vapour deposition Methods 0.000 title claims description 16
- 239000010408 film Substances 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 30
- 239000010409 thin film Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000005755 formation reaction Methods 0.000 description 40
- 150000003254 radicals Chemical class 0.000 description 36
- 230000015572 biosynthetic process Effects 0.000 description 24
- 239000000428 dust Substances 0.000 description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- -1 SiH radicals Chemical class 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、成膜原料ガスをプラズ
マ化し、該プラズマのもとで被成膜基板上に薄膜を形成
するプラズマＣＶＤ法及び装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma CVD method and apparatus for converting a film- forming raw material gas into plasma and forming a thin film on a film-forming substrate under the plasma.
【０００２】[0002]
【従来の技術】プラズマＣＶＤは、アモルファスシリコ
ン（ａ−Ｓｉ）太陽電池、液晶表示装置等の各種薄膜デ
バイスの形成に広く利用されている。プラズマＣＶＤ装
置は代表的には、真空成膜室、該室中に設けた高周波電
極及びこれに対向する接地電極を備えており、この成膜
室に原料ガスを導入するとともに所定の成膜真空度を維
持しつつ、前記両電極間に高周波電力（通常、サイン波
連続高周波電力）を印加して原料ガスをプラズマ化させ
ることで、接地電極上の基板に所望の薄膜を形成するも
のである。2. Description of the Related Art Plasma CVD is widely used for forming various thin film devices such as amorphous silicon (a-Si) solar cells and liquid crystal display devices. A plasma CVD apparatus is typically equipped with a vacuum film forming chamber, a high-frequency electrode provided in the chamber, and a ground electrode facing the high-frequency electrode. while maintaining the degree, the high frequency power between the two electrodes (typically, sinusoidal
A desired thin film is formed on the substrate on the ground electrode by applying continuous high frequency power) to turn the source gas into plasma.
【０００３】このようなプラズマＣＶＤ方法及び装置で
は、基板にダストが付着することを防止するため、成膜
室への基板搬送系や成膜室における基板の各配置を、ダ
スト発生が少なくなるように工夫している。また、ダス
ト発生を抑制するため、成膜条件を工夫したり、成膜室
への基板の設置時や装置の運転の合間に成膜室内電極や
基板搬送系等を清掃することも行われており、これらに
よって例えば液晶表示基板上の成膜ではかなりの効果が
あがっている。In such a plasma CVD method and apparatus, in order to prevent dust from adhering to the substrate, the substrate transportation system to the film forming chamber and the respective arrangements of the substrate in the film forming chamber are designed to reduce dust generation. I am devising. In addition, in order to suppress dust generation, the film forming conditions are devised and the electrodes in the film forming chamber and the substrate transfer system are cleaned during the installation of the substrate in the film forming chamber and the operation of the apparatus. However, these have significantly improved the effect of film formation on a liquid crystal display substrate, for example.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、プラズ
マＣＶＤにより、例えば原料ガスにシラン（ＳｉＨ 4 ）
を使ってガラス等の基板上にアモルファスシリコン（ａ
−Ｓｉ）膜を形成すると、たとえ前述の如く、ダスト発
生の少ない条件を設定しても、形成される膜にダストが
付着したり、混入したりする。However, by plasma CVD, for example, silane (SiH 4 ) is used as a source gas.
Amorphous silicon (a
When the -Si) film is formed, dust adheres to or mixes with the formed film even if the condition for generating less dust is set as described above.
【０００５】これは、本発明者の研究によると、たと
え、ダストが生成される最低のミニマムダストの条件で
成膜しても、その成膜時に、なお、基板に近い領域のプ
ラズマにダストが蓄積されるからである。前記原料ガス
ＳｉＨ4 を例にとると、これがプラズマ化されることに
よりＳｉＨ3 ラジカル、ＳｉＨ2 ラジカル、ＳｉＨラジ
カルが生成されるが、（ａ−Ｓｉ）膜の形成には主とし
てＳｉＨ3 ラジカルが寄与し、ＳｉＨ2 ラジカルやＳｉ
Ｈラジカルといった低シラン系ラジカルはＳｉＨ4 と反
応して高次シランＳｉｘＨｙが生成され、これがダスト
パーティクルになると考えられる。According to the research conducted by the inventor of the present invention, even if a film is formed under the condition of the minimum minimum dust in which dust is generated, the dust is still present in the plasma near the substrate during the film formation. Because it is accumulated. Taking the source gas SiH 4 as an example, when it is turned into plasma, SiH 3 radicals, SiH 2 radicals, and SiH radicals are generated, but the SiH 3 radicals mainly contribute to the formation of the (a-Si) film. SiH 2 radicals and Si
It is considered that low silane-based radicals such as H radicals react with SiH 4 to generate higher-order silane SixHy, which becomes dust particles.
【０００６】そこで本発明は、成膜原料ガスをプラズマ
化し、該プラズマのもとで被成膜基板上に薄膜を形成す
るプラズマＣＶＤ法及び装置において、成膜反応に寄与
するラジカル種の生成を妨げず、しかもダストパーティ
クル発生の原因となるラジカル種の発生を選択的に抑制
して、ダストの基板上成膜部への付着、混入を抑制し、
また、成膜速度を向上させることを目的とする。In view of the above, the present invention is directed to the generation of radical species that contribute to the film formation reaction in the plasma CVD method and apparatus in which the film formation source gas is made into plasma and a thin film is formed on the film formation substrate under the plasma. It does not hinder and selectively suppresses the generation of radical species that cause the generation of dust particles, and suppresses the adhesion and mixing of dust to the film formation portion on the substrate,
Moreover, it aims at improving the film-forming rate.
【０００７】[0007]
【課題を解決するための手段】プラズマは、前述のよう
に高周波電極に高周波電力を印加し、成膜室内を例えば
数１００ｍＴｏｒｒ程度にすると、高周波電極及び接地
電極間で発生する。その際、一般的には、高周波電極側
に、ブロッキングコンデンサが設置されており、ここ
に、電子が溜まり、高周波電極は、負に帯電する。する
と、プラズマ中の正イオンが高周波電極にむかって加速
され、衝突し、電子が生成され、この電子がプラズマを
持続する。従って、プラズマをコントロールするために
は、電子（エネルギーや密度）を制御する必要がある。As described above, plasma is generated between the high frequency electrode and the ground electrode when high frequency power is applied to the high frequency electrode as described above and the inside of the film forming chamber is set to, for example, several hundred mTorr. At that time, generally, a blocking capacitor is installed on the high frequency electrode side, where electrons are accumulated and the high frequency electrode is negatively charged. Then, the positive ions in the plasma are accelerated toward the high-frequency electrode and collide with each other to generate electrons, which sustain the plasma. Therefore, in order to control the plasma, it is necessary to control the electrons (energy and density).
【０００８】つまり、プラズマＣＶＤ法及び装置におい
ては、イオン、ラジカル制御は電子（エネルギー及び密
度）制御により制御でき、これを制御することで、生成
される各種ラジカルのうち、成膜反応に不必要なラジカ
ル種の発生を抑制し、成膜反応に必要なラジカル種のみ
を増加させ得ると考えられる。そこで本発明者はさらに
研究を重ね、プラズマ中における電子エネルギー及び密
度は生成される各種ラジカルの密度の空間分布により決
定されること、換言すると、プラズマ中における電子エ
ネルギーが各種イオン、ラジカルの生成に関係すること
に着目するとともに、各種ラジカル密度の比はプラズマ
発生のための高周波入力（ＲＦ入力）のオン時、オフ時
からの時間遷移を持つこと、すなわち、例えば原料ガス
がＳｉＨ4 の場合、成膜反応に利用すべきＳｉＨ3 ラジ
カルは、プラズマ発生のための高周波入力オンにより、
ダスト発生の原因となるＳｉＨ2ラジカルやＳｉＨラジ
カルとともに増加するが、高周波入力オフ後、ＳｉＨ3
ラジカルは寿命が比較的長いのに対し、ＳｉＨ2 ラジカ
ルやＳｉＨラジカルは寿命が短いことに着目した。さら
に、電子エネルギー及び密度は、図３に示すように、高
周波入力オンにともない急速に立ち上がり、再び急速に
降下して一定となることに着目し、結論として、原料ガ
スへの高周波電力印加の時間間隔を制御することで成膜
反応に不必要なラジカルの発生を選択的に抑制し、成膜
反応に必要なラジカルのみを選択的に増加させ得ること
を見出した。さらにまた、高周波電力として連続パルス
高周波電力を採用すると、通常のサイン波連続高周波電
力を採用する場合よりも急峻な電力を印加でき、それに
より電子エネルギー、密度の急峻な立ち上がりを得てガ
ス分解を促進し、成膜を促進させ得ることも見出した。 That is, in the plasma CVD method and apparatus, ion and radical control can be controlled by electron (energy and density) control, and by controlling this, it is unnecessary for film formation reaction among various radicals generated. It is considered that the generation of various radical species can be suppressed and only the radical species necessary for the film formation reaction can be increased. The present inventor has further investigations, it electron energy and density in the plasma is determined by the spatial distribution of the density of various radicals formed, in other words, electrons e in the plasma
Focusing on the fact that energy is related to the generation of various ions and radicals, the ratio of various radical densities has a time transition from the time of turning on the high frequency input (RF input) for plasma generation to the time of turning it off, that is, For example, when the source gas is SiH 4, the SiH 3 radicals to be used in the film formation reaction are
It increases with SiH 2 radicals and SiH radicals that cause dust generation, but after the high frequency input is turned off, SiH 3
It was noted that radicals have a relatively long life, whereas SiH 2 radicals and SiH radicals have a short life. Furthermore, as shown in FIG. 3, the electron energy and the density rise rapidly when the high-frequency input is turned on, then rapidly fall again and become constant, and in conclusion, the time of applying the high-frequency power to the source gas is concluded. It has been found that by controlling the interval, it is possible to selectively suppress the generation of radicals unnecessary for the film formation reaction and selectively increase only the radicals necessary for the film formation reaction . Furthermore, continuous pulse as high frequency power
When high-frequency power is adopted, it is possible to use normal sine wave continuous high-frequency power.
Force can be applied sharper than when force is applied, and
More electron energy and a sharp rise in density are obtained,
It has also been found that it is possible to accelerate the decomposition of soot and promote the film formation.
【０００９】以上の知見に基づき本発明は、成膜原料ガ
スをプラズマ化し、該プラズマのもとで被成膜基板上に
薄膜を形成するプラズマＣＶＤ法において、前記原料ガ
スのプラズマ化を、所定周波数の連続パルス高周波電力
に１ｋＨｚ以下の第１のパルス変調及び該第１パルス変
調より短い周期をもつ第２パルス変調を重畳させてオン
・オフの繰り返しを伴った状態とした高周波電力の印加
により行うことを特徴とするプラズマＣＶＤ法、及び成
膜原料ガスをプラズマ化し、該プラズマのもとで被成膜
基板上に薄膜を形成するプラズマＣＶＤ装置において、
前記原料ガスのプラズマ化のための高周波電力印加手段
が、所定周波数の連続パルス高周波電力に１ｋＨｚ以下
の第１のパルス変調及び該第１パルス変調より短い周期
をもつ第２パルス変調を重畳させてオン・オフの繰り返
しを伴った状態とした高周波電力を出力するものである
ことを特徴とするプラズマＣＶＤ装置を提供するもので
ある。On the basis of the above findings, the present invention provides a plasma CVD method for forming a thin film on a film-forming substrate under the plasma of a film-forming source gas, and then converting the source gas into a predetermined plasma. continuous pulsed high-frequency power to 1 k Hz or less of the first pulse modulation and by superimposing the second pulse modulation having a period shorter than the first pulse modulation on a frequency
Plasma CVD method, which comprises carrying out by the application of-the state repeatedly accompanied by off-frequency power, and formed
In a plasma CVD apparatus for converting a film material gas into plasma and forming a thin film on a substrate to be formed under the plasma,
The RF power applying means for plasma material gas, superimposes the second pulse modulation with a continuous pulse high frequency power to 1 k Hz following the first pulse modulation and the first pulse period shorter than the modulation of a predetermined frequency Let me turn it on and off
The present invention provides a plasma CVD apparatus characterized in that it outputs high-frequency electric power in a state with a mark .
【００１０】前記変調条件は、原料ガス流量、成膜室、
基板温度、原料ガス種等の多くのパラメーターにより、
随時変化させる必要があるが、一般的には、前記第１の
パルス変調は１ｋＨｚ以下の条件とすることが考えられ
る。周期が１ｋＨｚ相当のものより短いと、不必要なラ
ジカル種発生を抑制し難い。一方、必要なラジカル種を
十分増加させる上で、例えば４００Ｈｚ以上とすること
が考えられる。また、必要なラジカル種を選択的に増加
させ、不必要なラジカル種の発生、残存を選択的に抑制
するうえで、前記第２のパルス変調におけるオンタイム
ｔ１は０．５μｓｅｃ＜ｔ１＜１００μｓｅｃ、オフタ
イムｔ２は３μｓｅｃ＜ｔ２＜１００μｓｅｃの範囲か
ら選択決定することが代表的な例として考えられる。な
お、本明細書において「μｓｅｃ」は「１０ -6 秒」を意
味している。 The modulation conditions are the raw material gas flow rate, the film forming chamber,
With many parameters such as substrate temperature and source gas species,
It is necessary to change from time to time, in general, the first pulse modulation is considered to be the following conditions 1 k Hz. When the period is shorter than that of 1 k Hz equivalent, it is difficult to suppress the unnecessary radical species generated. On the other hand, in order to sufficiently increase the necessary radical species, it is possible to set the frequency to 400 Hz or higher, for example. Further, the on-time t1 in the second pulse modulation is 0.5 μsec <t1 <100 μsec in order to selectively increase the necessary radical species and selectively suppress the generation and remaining of the unnecessary radical species. As a typical example, it is considered that the off time t2 is selectively determined from the range of 3 μsec <t2 <100 μsec. Na
In this specification, “μsec” means “10 −6 seconds”.
I'm tasting.
【００１１】[0011]
【作用】本発明のプラズマＣＶＤ法及び装置によると、
基本となる所定周波数の連続パルス高周波電力に１ｋＨ
ｚ以下の第１のパルス変調及び該第１パルス変調より短
い周期をもつ第２のパルス変調を重畳させることでオン
・オフが繰り返される状態の高周波電力が原料ガスに印
加され、各電力印加オン時における電子エネルギー・密
度の急速な立ち上がり及び各電力オフ時の成膜反応に不
必要なラジカルの比較的速やかな消滅により、成膜反応
に必要なラジカル種が選択的に発生、増加する一方、成
膜反応に不必要なラジカル種の発生が抑制された状態
で、基板上に所望の薄膜が形成される。成膜中、成膜反
応に不必要なラジカル種の発生が抑制されることでダス
トパーティクルの発生率は激減し、且つ、成膜反応に必
要なラジカル種は選択的に発生、増加することで所望の
成膜速度が得られる。According to the plasma CVD method and apparatus of the present invention,
1 k H in continuous pulse high frequency power of a predetermined frequency as a basic
on in Rukoto superimposes a second pulse modulation with the following first pulse modulator and a period shorter than the first pulse modulation z
・ High-frequency power in the state of repeated off is applied to the source gas, and the electron energy and density when each power is on
Of the film formation reaction when the power is turned off.
The radical species necessary for the film formation reaction are selectively generated and increased by the relatively rapid disappearance of the necessary radicals, while the generation of unnecessary radical species for the film formation reaction is suppressed, A desired thin film is formed. By suppressing the generation of radical species unnecessary for the film formation reaction during film formation, the generation rate of dust particles is drastically reduced, and the radical species necessary for the film formation reaction is selectively generated and increased. A desired film formation rate can be obtained.
【００１２】[0012]
【実施例】以下、本発明の実施例を図面を参照して説明
する。図１は本発明方法の実施に使用するプラズマＣＶ
Ｄ装置の一例の概略断面を示している。図示の装置は、
真空チャンバ１、該チャンバに電磁弁２１を介して接続
した真空ポンプ２、チャンバ１内に設置した電極３、
４、チャンバ１に接続した成膜用ガス源５及び電磁弁６
１を介して接続したベント用ガス源６を備えている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a plasma CV used for carrying out the method of the present invention.
The schematic cross section of an example of D apparatus is shown. The device shown is
A vacuum chamber 1, a vacuum pump 2 connected to the chamber via a solenoid valve 21, an electrode 3 installed in the chamber 1,
4, deposition gas source 5 and solenoid valve 6 connected to chamber 1
A vent gas source 6 connected via 1 is provided.
【００１３】電極３は接地電極であり、これには成膜温
度調節用のヒータ３１が付設されている。電極４にはそ
れ自体既に知られているマッチングボックス８を介して
高周波電源７から高周波電圧が印加される。高周波電源
７は、連続パルス高周波電力の任意の高周波パルス変調
が可能な高周波信号発生器７１及び高周波増幅器（ＲＦ
パワーアンプ）７２を有しており、所定周波数の連続パ
ルス高周波に４００Ｈｚ〜１ｋＨｚの第１のパルス変調
及び該変調より短い周期をもつ第２のパルス変調を重畳
させて電力印加のオン・オフが繰り返される状態とした
高周波電力を印加できるように構成してある。The electrode 3 is a ground electrode, and a heater 31 for adjusting the film formation temperature is attached to the ground electrode. A high frequency voltage is applied to the electrode 4 from a high frequency power supply 7 via a matching box 8 which is already known. The high frequency power source 7 includes a high frequency signal generator 71 and a high frequency amplifier (RF) capable of performing arbitrary high frequency pulse modulation of continuous pulse high frequency power.
Power amplifier) has a 72, on the superimposed power applying a second pulse modulation with a continuous pulse first pulse modulator and a period shorter than the modulation of the high frequency 400Hz~1 k Hz of a predetermined frequency, It is configured to be able to apply high frequency power in a state where it is repeatedly turned off .
【００１４】第２のパルス変調では、第１パルス変調に
よるオン時においてμｓｅｃオーダ（オンタイムｔ１＝
０．５〜１００μｓｅｃ、オフタイムｔ２＝３〜１００
μｓｅｃ）のパルス変調を行う。第１パルス変調による
高周波入力のオン、オフ状態は図２の（Ａ）に示すよう
になり、第２パルス変調による高周波入力のオン、オフ
状態は図２の（Ｂ）の下段に示すようになる。In the second pulse modulation, when the first pulse modulation is on, the time is on the order of μsec (on time t1 =
0.5 to 100 μsec, off time t2 = 3 to 100
μsec) pulse modulation is performed. The ON / OFF state of the high frequency input by the first pulse modulation is as shown in FIG. 2A, and the ON / OFF state of the high frequency input by the second pulse modulation is as shown in the lower part of FIG. 2B. Become.
【００１５】以上説明した装置によると、本発明方法は
次のように実施される。先ず、成膜すべき基板９を装着
したトレー１０を電極３上に設置する。しかるのち、チ
ャンバ１内を電磁弁２１の開成とポンプ２の運転にて所
定圧まで真空引きし、成膜用ガス源５から成膜用原料ガ
スをチャンバ内に導入し、且つ、チャンバ内を成膜真空
度に維持する。次いで、高周波電極４に電源７から、そ
れ自体は連続パルス高周波電力であるが第１及び第２パ
ルス変調されてオン・オフの繰り返しを伴った状態とさ
れた高周波電力を印加して該ガスをプラズマ化させ、基
板９上に成膜させる。成膜後、電磁弁６１を開いてベン
トガス源６からチャンバ内へベントガス（例えばＮ2 ガ
ス）を導入してベント処理したのち、基板９をチャンバ
１から取り出す。或いは、チャンバ１内の真空を維持し
たまま、基板９をトレー１０ごと、次のプロセスチャン
バへ移動させることも考えられる。According to the apparatus described above, the method of the present invention is carried out as follows. First, the tray 10 on which the substrate 9 on which the film is to be formed is mounted is set on the electrode 3. Then, the inside of the chamber 1 is evacuated to a predetermined pressure by opening the solenoid valve 21 and operating the pump 2, the film-forming source gas is introduced from the film-forming gas source 5 into the chamber, and the inside of the chamber is changed. The film forming vacuum is maintained. Next, from the power source 7 to the high frequency electrode 4,
Although it is continuous pulse high frequency power itself,
It is a state in which it is pulse-modulated and is repeatedly turned on and off.
The generated high-frequency power is applied to turn the gas into plasma, and a film is formed on the substrate 9. After the film formation, the electromagnetic valve 61 is opened and a vent gas (for example, N 2 gas) is introduced from the vent gas source 6 into the chamber to perform a vent process, and then the substrate 9 is taken out from the chamber 1. Alternatively, it is possible to move the substrate 9 together with the tray 10 to the next process chamber while maintaining the vacuum in the chamber 1.
【００１６】前記成膜中、原料ガスには、電力印加のオ
ン・オフを繰り返す、第１及び第２パルス変調されたパ
ルス高周波電力が印加されるので、各電力印加オン時に
おける電子エネルギー・密度の急速な立ち上がり及び各
電力オフ時の成膜反応に不必要なラジカルの比較的速や
かな消滅により、成膜反応に必要なラジカル種が選択的
に発生、増加する一方、成膜反応に不必要なラジカル種
の発生が抑制された状態で、基板上に所望の薄膜が形成
される。このように、成膜中、成膜反応に不必要なラジ
カル種の発生が抑制されることでダストパーティクルの
発生率は激減し、且つ、成膜反応に必要なラジカル種は
選択的に発生、増加することで成膜速度が向上し、ま
た、プラズマエネルギー或いは密度の制御により良質な
成膜を行える。During the film formation, an electric power is applied to the source gas.
Repeated down off, the first and second pulse modulated pulse high frequency power is applied, at each power application on
Rapid rise of electron energy and density in
Relatively fast radicals unnecessary for film formation reaction when power is off
By extinction, radical species required for the film formation reaction are selectively generated and increased, while a desired thin film is formed on the substrate while the generation of radical species unnecessary for the film formation reaction is suppressed. . As described above, during the film formation, the generation of unnecessary radical species for the film formation reaction is suppressed, the generation rate of dust particles is drastically reduced, and the radical species necessary for the film formation reaction is selectively generated. By increasing the number, the film formation rate is improved, and high quality film formation can be performed by controlling plasma energy or density.
【００１７】なお、第１パルス変調のみを行うときは、
ダストパーティクルの発生率は未だ高いが、第２パルス
変調も重畳するので、ダストパーティクルの発生率はそ
れだけ低下する。また、前記実施例によると、原料ガス
流量やプラズマ発生のための投入パワーを増加させて
も、ダスト発生増加を引き起こさないので、それだけ成
膜速度を向上させることができる。When only the first pulse modulation is performed,
Although the dust particle generation rate is still high, the second pulse modulation is also superimposed, so that the dust particle generation rate is reduced accordingly. In addition, according to the above-described embodiment, even if the flow rate of the raw material gas and the input power for plasma generation are increased, the dust generation is not increased, so that the film formation rate can be improved accordingly.
【００１８】前記パルス変調による電力印加のオン時間
・オフ時間の最適条件で成膜した膜は、物理的特性（バ
ンドギャップ、キャリア移動度等）の安定した特性が得
られる。以上説明した方法及び装置に基づき、次の具体
的条件でガラス基板上にアモルファスシリコン（ａ−Ｓ
ｉ）膜を、シリコンウェハに窒化シリコン（ＳｉＮｘ）
膜を形成したところ、該膜上に実用上問題となるダスト
の付着は見られず、成膜時間もパルス変調無しで、他の
条件を同一とした成膜時より短縮された。 実施例１ （成膜条件） １）基板：ガラス ２）基板サイズ：１０ｃｍ角 ３）高周波電力：１３．５６ＭＨｚ １０００Ｗの連続
パルス高周波電力 ４）第１パルス変調 ：８００〜１０００Ｈｚ 第２パルス変調 ：オンタイムｔ１＝１μｓｅｃ〜
１０μｓｅｃ オフタイムｔ２＝５μｓｅｃ〜２０μｓｅｃ ５）原料ガス：ＳｉＨ4 （１０％）／Ｈ2 （９０％）
２００ｓｃｃｍ ６）基板温度：３００℃ （成膜結果） １）成膜速度：（ａ−Ｓｉ）膜３５０Å／ｍｉｎ（従来
２５０Å／ｍｉｎ） ２）ダスト ：５０個／基板（従来 １５０個／基板） 実施例２ （成膜条件） １）基板：Ｓｉウェハ ２）基板サイズ：４インチ ３）高周波電力：１３．５６ＭＨｚ １０００Ｗの連続
パルス高周波電力 ４）第１パルス変調 ：８００〜１０００Ｈｚ 第２パルス変調 ：オンタイムｔ１＝１μｓｅｃ〜
１０μｓｅｃ オフタイムｔ２＝５μｓｅｃ〜２０μｓｅｃ ５）原料ガス：ＳｉＨ4 １００ｓｃｃｍ ＮＨ3 ２００ｓｃｃｍ ６）基板温度：３５０℃ （成膜結果） １）成膜速度：ＳｉＮｘ膜４５０Å／ｍｉｎ（従来 ３
５０Å／ｍｉｎ） ２）ダスト ：７０個／ウェハ（従来 ２００個／ウェ
ハ）[0018] The on-time of the power applied by the pulse modulation
The film formed under the optimum off-time condition has stable physical properties (bandgap, carrier mobility, etc.). Based on the method and apparatus described above, amorphous silicon (a-S) was formed on a glass substrate under the following specific conditions.
i) Silicon nitride (SiNx) film on a silicon wafer
When the film was formed, no adhesion of dust, which was a problem in practice, was observed on the film, and the film formation time was shortened as compared with the film formation under the same conditions without pulse modulation. Example 1 (Film forming conditions) 1) Substrate: glass 2) Substrate size: 10 cm square 3) High frequency power: 13.56 MHz 1000 W continuous
Pulse high frequency power 4) First pulse modulation : 800 to 1000 Hz Second pulse modulation: On time t1 = 1 μsec
10 μsec off time t2 = 5 μsec to 20 μsec 5) Source gas: SiH 4 (10%) / H 2 (90%)
200 sccm 6) Substrate temperature: 300 ° C. (result of film formation) 1) Film formation speed: (a-Si) film 350 Å / min (conventional 250 Å / min) 2) Dust: 50 / substrate (conventional 150 / substrate) Example 2 (Film forming conditions) 1) Substrate: Si wafer 2) Substrate size: 4 inches 3) High frequency power: 13.56 MHz 1000 W continuous
Pulse high frequency power 4) First pulse modulation : 800 to 1000 Hz Second pulse modulation: On time t1 = 1 μsec
10 μsec off time t2 = 5 μsec to 20 μsec 5) Source gas: SiH 4 100 sccm NH 3 200 sccm 6) Substrate temperature: 350 ° C. (deposition result) 1) Deposition rate: SiNx film 450 Å / min (conventional 3
50 Å / min) 2) Dust: 70 pieces / wafer (conventional 200 pieces / wafer)
【００１９】[0019]
【発明の効果】以上説明したように本発明プラズマＣＶ
Ｄ法及び装置には次のような利点がある。 ダスト発生を大幅に低減できる。 成膜に不必要なラジカルを抑制できることで、成膜
速度の向上が可能になる。 ガス流量、高周波電力を増加しても、ダストの発生
を抑えたまま、高速成膜が可能になる。 電子エネルギー、密度の制御性が大幅に向上する。As described above, the plasma CV of the present invention
The D method and apparatus have the following advantages. Dust generation can be greatly reduced. Since the radicals unnecessary for film formation can be suppressed, the film formation speed can be improved. Even if the gas flow rate and the high frequency power are increased, high-speed film formation can be performed while suppressing the generation of dust. Controllability of electron energy and density is greatly improved.
【図１】本発明に係る方法の実施に使用するプラズマＣ
ＶＤ装置の一例の概略断面図である。1 is a plasma C used for carrying out the method according to the invention, FIG.
It is a schematic sectional drawing of an example of a VD apparatus.
【図２】高周波電力のパルス変調の様子を示す図であ
る。FIG. 2 is a diagram showing a state of pulse modulation of high frequency power.
【図３】高周波入力オン後の電子エネルギー（密度）の
時間的変化を示すグラフである。FIG. 3 is a graph showing a temporal change in electron energy (density) after turning on a high frequency input.
１ 真空チャンバ ２ 真空ポンプ ２１ 電磁弁 ３ 接地電極 ３１ ヒータ ４ 高周波電極 ５ 成膜用原料ガス源 ６ ベントガス源 ６１ 電磁弁 ７ 高周波電源 ７１ 高周波信号発生器 ７２ ＲＦパワーアンプ ８ マッチングボックス 1 Vacuum Chamber 2 Vacuum Pump 21 Solenoid Valve 3 Grounding Electrode 31 Heater 4 High Frequency Electrode 5 Raw Material Gas Source for Film Formation 6 Vent Gas Source 61 Solenoid Valve 7 High Frequency Power Source 71 High Frequency Signal Generator 72 RF Power Amplifier 8 Matching Box
Claims (3)
マのもとで被成膜基板上に薄膜を形成するプラズマＣＶ
Ｄ法において、前記原料ガスのプラズマ化を、所定周波
数の連続パルス高周波電力に１ｋＨｚ以下の第１のパル
ス変調及び該第１パルス変調より短い周期をもつ第２パ
ルス変調を重畳させてオン・オフの繰り返しを伴った状
態とした高周波電力の印加により行うことを特徴とする
プラズマＣＶＤ法。1. A film forming material gas into plasma, the plasma
Plasma CV for forming a thin film on a film-forming substrate under vacuum
In Method D, wherein the plasma source gas, is superimposed the second pulse modulation with a continuous pulse high frequency power to 1 k Hz following the first pulse modulation and shorter period than the first pulse modulation of a predetermined frequency on・ State with repeated off
Plasma CVD method characterized in that it is carried out by applying high-frequency electric power in a state .
ムｔ１が０．５μｓｅｃ＜ｔ１＜１００μｓｅｃ、オフ
タイムｔ２が３μｓｅｃ＜ｔ２＜１００μｓｅｃの範囲
にある請求項１記載のプラズマＣＶＤ法。2. The plasma CVD method according to claim 1, wherein the on-time t1 in the second pulse modulation is in the range of 0.5 μsec <t1 <100 μsec, and the off-time t2 is in the range of 3 μsec <t2 <100 μsec.
マのもとで被成膜基板上に薄膜を形成するプラズマＣＶ
Ｄ装置において、前記原料ガスのプラズマ化のための高
周波電力印加手段が、所定周波数の連続パルス高周波電
力に１ｋＨｚ以下の第１のパルス変調及び該第１パルス
変調より短い周期をもつ第２パルス変調を重畳させてオ
ン・オフの繰り返しを伴った状態とした高周波電力を出
力するものであることを特徴とするプラズマＣＶＤ装
置。3. A film-forming material gas into plasma, the plasma
Plasma CV for forming a thin film on a film-forming substrate under vacuum
In D device, RF power applying means for plasma of the raw material gas, second with continuous pulse high frequency power to 1 k Hz following the first pulse modulation and shorter period than the first pulse modulation of a predetermined frequency 2 Oh by superimposing a pulse modulation
A plasma CVD apparatus characterized in that it outputs high-frequency power in a state in which it is repeatedly turned on and off .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3323326A JPH08979B2 (en) | 1991-12-06 | 1991-12-06 | Plasma CVD method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3323326A JPH08979B2 (en) | 1991-12-06 | 1991-12-06 | Plasma CVD method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05156452A JPH05156452A (en) | 1993-06-22 |
| JPH08979B2 true JPH08979B2 (en) | 1996-01-10 |
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ID=18153545
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3323326A Expired - Fee Related JPH08979B2 (en) | 1991-12-06 | 1991-12-06 | Plasma CVD method and apparatus |
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| Country | Link |
|---|---|
| JP (1) | JPH08979B2 (en) |
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|---|---|---|---|---|
| JPH0794421A (en) * | 1993-09-21 | 1995-04-07 | Anelva Corp | Method for manufacturing amorphous silicon thin film |
| US6319355B1 (en) * | 1999-06-30 | 2001-11-20 | Lam Research Corporation | Plasma processor with coil responsive to variable amplitude rf envelope |
| US6472822B1 (en) | 2000-04-28 | 2002-10-29 | Applied Materials, Inc. | Pulsed RF power delivery for plasma processing |
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|---|---|---|---|---|
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1991
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| Publication number | Publication date |
|---|---|
| JPH05156452A (en) | 1993-06-22 |
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