JPH0911112A - 半導体ウェハの研磨方法 - Google Patents

半導体ウェハの研磨方法

Info

Publication number
JPH0911112A
JPH0911112A JP19898195A JP19898195A JPH0911112A JP H0911112 A JPH0911112 A JP H0911112A JP 19898195 A JP19898195 A JP 19898195A JP 19898195 A JP19898195 A JP 19898195A JP H0911112 A JPH0911112 A JP H0911112A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
polishing
polishing cloth
surface plate
contact area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19898195A
Other languages
English (en)
Japanese (ja)
Inventor
Takafumi Hajime
啓文 一
Toshiji Sashitani
利治 指谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Electronic Metals Co Ltd filed Critical Komatsu Electronic Metals Co Ltd
Priority to JP19898195A priority Critical patent/JPH0911112A/ja
Priority to TW85109232A priority patent/TW299464B/zh
Publication of JPH0911112A publication Critical patent/JPH0911112A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
JP19898195A 1995-06-30 1995-06-30 半導体ウェハの研磨方法 Pending JPH0911112A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP19898195A JPH0911112A (ja) 1995-06-30 1995-06-30 半導体ウェハの研磨方法
TW85109232A TW299464B (fr) 1995-06-30 1996-07-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19898195A JPH0911112A (ja) 1995-06-30 1995-06-30 半導体ウェハの研磨方法

Publications (1)

Publication Number Publication Date
JPH0911112A true JPH0911112A (ja) 1997-01-14

Family

ID=16400139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19898195A Pending JPH0911112A (ja) 1995-06-30 1995-06-30 半導体ウェハの研磨方法

Country Status (2)

Country Link
JP (1) JPH0911112A (fr)
TW (1) TW299464B (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001082354A1 (fr) * 2000-04-24 2001-11-01 Sumitomo Mitsubishi Silicon Corporation Procédé de fabrication d'une plaquette de semi-conducteur
JP2010042508A (ja) * 2009-11-25 2010-02-25 Shin-Etsu Chemical Co Ltd 研磨方法
JP2011216887A (ja) * 2010-03-31 2011-10-27 Siltronic Ag 半導体ウェハの両面研磨のための方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001082354A1 (fr) * 2000-04-24 2001-11-01 Sumitomo Mitsubishi Silicon Corporation Procédé de fabrication d'une plaquette de semi-conducteur
US7589023B2 (en) 2000-04-24 2009-09-15 Sumitomo Mitsubishi Silicon Corporation Method of manufacturing semiconductor wafer
US8283252B2 (en) 2000-04-24 2012-10-09 Sumitomo Mitsubishi Silicon Corporation Method of manufacturing semiconductor wafer
JP2010042508A (ja) * 2009-11-25 2010-02-25 Shin-Etsu Chemical Co Ltd 研磨方法
JP2011216887A (ja) * 2010-03-31 2011-10-27 Siltronic Ag 半導体ウェハの両面研磨のための方法

Also Published As

Publication number Publication date
TW299464B (fr) 1997-03-01

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