JPH09111464A - Electroless plating liquid, electroless plating method and production of printed circuit board - Google Patents
Electroless plating liquid, electroless plating method and production of printed circuit boardInfo
- Publication number
- JPH09111464A JPH09111464A JP29608495A JP29608495A JPH09111464A JP H09111464 A JPH09111464 A JP H09111464A JP 29608495 A JP29608495 A JP 29608495A JP 29608495 A JP29608495 A JP 29608495A JP H09111464 A JPH09111464 A JP H09111464A
- Authority
- JP
- Japan
- Prior art keywords
- electroless plating
- plating solution
- plating
- concentration
- electroless
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007772 electroless plating Methods 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000007788 liquid Substances 0.000 title description 5
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 22
- 229910001431 copper ion Inorganic materials 0.000 claims abstract description 22
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 15
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 14
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 9
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims abstract description 5
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 claims abstract description 4
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 claims abstract description 4
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims abstract description 4
- 239000012790 adhesive layer Substances 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 13
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 claims description 9
- 150000002506 iron compounds Chemical class 0.000 claims description 9
- 239000008139 complexing agent Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- 229910001453 nickel ion Inorganic materials 0.000 claims description 5
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001429 cobalt ion Inorganic materials 0.000 claims description 4
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 claims description 4
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 claims description 3
- ITBPIKUGMIZTJR-UHFFFAOYSA-N [bis(hydroxymethyl)amino]methanol Chemical compound OCN(CO)CO ITBPIKUGMIZTJR-UHFFFAOYSA-N 0.000 claims description 3
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 claims description 2
- 239000000920 calcium hydroxide Substances 0.000 claims description 2
- 229910001861 calcium hydroxide Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 24
- 230000008021 deposition Effects 0.000 abstract description 22
- 238000000354 decomposition reaction Methods 0.000 abstract description 12
- 230000002159 abnormal effect Effects 0.000 abstract description 7
- 229910000365 copper sulfate Inorganic materials 0.000 abstract description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 abstract description 2
- 238000007747 plating Methods 0.000 description 125
- 239000010408 film Substances 0.000 description 40
- 239000002245 particle Substances 0.000 description 24
- 239000000243 solution Substances 0.000 description 22
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 229920006015 heat resistant resin Polymers 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 11
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000007800 oxidant agent Substances 0.000 description 6
- 238000007788 roughening Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000011049 filling Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 239000000276 potassium ferrocyanide Substances 0.000 description 4
- XOGGUFAVLNCTRS-UHFFFAOYSA-N tetrapotassium;iron(2+);hexacyanide Chemical compound [K+].[K+].[K+].[K+].[Fe+2].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] XOGGUFAVLNCTRS-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910000570 Cupronickel Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000004695 Polyether sulfone Substances 0.000 description 3
- JUWOETZNAMLKMG-UHFFFAOYSA-N [P].[Ni].[Cu] Chemical compound [P].[Ni].[Cu] JUWOETZNAMLKMG-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 3
- 235000015165 citric acid Nutrition 0.000 description 3
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical group C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920006393 polyether sulfone Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- -1 potassium ferricyanide Chemical compound 0.000 description 3
- 239000012286 potassium permanganate Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- 239000004640 Melamine resin Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229920003180 amino resin Polymers 0.000 description 2
- 150000007514 bases Chemical class 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical class O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 241000080590 Niso Species 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001869 cobalt compounds Chemical class 0.000 description 1
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229940046892 lead acetate Drugs 0.000 description 1
- 150000002611 lead compounds Chemical class 0.000 description 1
- RLJMLMKIBZAXJO-UHFFFAOYSA-N lead nitrate Chemical compound [O-][N+](=O)O[Pb]O[N+]([O-])=O RLJMLMKIBZAXJO-UHFFFAOYSA-N 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N methyl monoether Natural products COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004682 monohydrates Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- SIGUVTURIMRFDD-UHFFFAOYSA-M sodium dioxidophosphanium Chemical compound [Na+].[O-][PH2]=O SIGUVTURIMRFDD-UHFFFAOYSA-M 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は無電解めっき方法に
係り、特には高速めっきを実現でき、浴安定性に優れ、
ノジュールのない無電解めっきが可能な無電解めっき液
とこれを用いた無電解めっき方法およびプリント配線板
の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroless plating method, and in particular, can realize high-speed plating and is excellent in bath stability.
The present invention relates to an electroless plating solution capable of electroless plating without nodules, an electroless plating method using the same, and a method for manufacturing a printed wiring board.
【0002】[0002]
【従来の技術】プリント配線板の製造プロセスにおける
導体パターンの形成では、基材の所定部分にめっきレジ
ストを設けた後、そのレジスト非形成部分に対して無電
解銅めっきが施される。従来は、EDTAを錯化剤とし
て使用した無電解めっき浴を用いて、導体パターンの形
成が行われていた。無電解めっきを施すためには、予め
表面が粗化処理された無電解めっき用接着剤層が形成さ
れることが多いが、EDTAめっき浴はアンカー内への
めっきの充填率に優れているものの、このようなめっき
浴は、めっき析出速度が遅く、このめっき浴にて厚さ数
十μmの導体回路を形成するためには、十数時間もの時
間がかかり、工業上妥当ではない。2. Description of the Related Art In the formation of a conductor pattern in the manufacturing process of a printed wiring board, a plating resist is provided on a predetermined portion of a base material, and then electroless copper plating is applied to the non-resist portion. Conventionally, a conductor pattern has been formed using an electroless plating bath using EDTA as a complexing agent. In order to apply electroless plating, an adhesive layer for electroless plating whose surface has been roughened in advance is often formed, but the EDTA plating bath has an excellent filling rate of plating in the anchor. Such a plating bath has a low plating deposition rate, and it takes a dozen hours or more to form a conductor circuit having a thickness of several tens of μm in this plating bath, which is not industrially appropriate.
【0003】そこで、特開H1−168871号、特開
S64−52081号、特開S63−241188号に
は、トリアルカノールアミンを錯化剤として使用した高
速めっき(5〜10μm/時間)が可能な無電解銅めっ
きが提案されている。Therefore, in Japanese Patent Laid-Open Nos. H1-168871, S64-52081, and S63-241188, high-speed plating (5 to 10 μm / hour) using trialkanolamine as a complexing agent is possible. Electroless copper plating has been proposed.
【0004】[0004]
【発明が解決しようとする課題】ところが、これら公報
に記載された条件により、無電解めっきを行ったとこ
ろ、めっき浴が分解したり、ノジュールと呼ばれる異常
析出が見られた。特に、線間/線幅が100μm/10
0μm以下の微細な導体回路を持つプリント配線板の導
体回路形成に使用する場合、ノジュールの発生は致命的
である。本願発明者らが鋭意研究した結果、この原因
が、主として浴中の銅イオン濃度と還元剤濃度にあるこ
とが分かった。本発明は上記の課題を解決するためなさ
れたものであり、その目的は、めっき析出速度を維持
し、しかも浴分解や異常析出を防止することにある。However, when electroless plating was performed under the conditions described in these publications, the plating bath was decomposed and abnormal deposition called nodule was observed. In particular, the line spacing / line width is 100 μm / 10
When used for forming a conductor circuit of a printed wiring board having a fine conductor circuit of 0 μm or less, the generation of nodules is fatal. As a result of diligent research by the inventors of the present application, it was found that this cause is mainly due to the copper ion concentration and the reducing agent concentration in the bath. The present invention has been made to solve the above problems, and an object thereof is to maintain a plating deposition rate and prevent bath decomposition and abnormal deposition.
【0005】[0005]
【課題を解決するための手段】本願発明は、「銅イオ
ン、トリアルカノールアミン、還元剤、pH調整剤から
なる無電解めっき液において、銅イオンの濃度が0.0
10〜0.015mol/l、pH調整剤の濃度が、
0.25〜0.35mol/lであり、還元剤の濃度が
0.01〜0.04mol/lであることを特徴とする
無電解めっき液」と、これを使用した無電解めっき方法
とプリント配線板の製造方法である。また、本願発明
は、二次めっき用のめっき液として使用されることが特
に望ましいが、一次めっき液としては「ヒドロキシカル
ボン酸を錯化剤とし、銅イオン、ニッケルイオン、コバ
ルトイオンから選ばれる少なくとも2種以上を金属源と
し、還元剤、pH調整剤を含む無電解めっき液におい
て、前記無電解めっき液には、鉄化合物および/又はビ
ピリジルを含有してなることを特徴とする無電解めっき
液」が望ましい。According to the present invention, "in an electroless plating solution comprising copper ion, trialkanolamine, reducing agent and pH adjusting agent, the concentration of copper ion is 0.0
10 to 0.015 mol / l, the concentration of the pH adjusting agent is
0.25 to 0.35 mol / l and the concentration of the reducing agent is 0.01 to 0.04 mol / l, and an electroless plating method and print using the same. It is a method of manufacturing a wiring board. Further, the present invention is particularly desirable to be used as a plating solution for secondary plating, but as the primary plating solution, "at least one selected from copper ion, nickel ion and cobalt ion using hydroxycarboxylic acid as a complexing agent is used. An electroless plating solution containing two or more kinds of metal sources and a reducing agent and a pH adjusting agent, wherein the electroless plating solution contains an iron compound and / or bipyridyl. Is desirable.
【0006】本願発明において、銅イオンの濃度を0.
01〜0.015mol/lとする理由は、銅イオン濃
度が0.01mol/l未満では、析出速度が低下し、
めっきがつきにくくなり、銅イオン濃度が0.015m
ol/l以上になると、未析(めっき反応が生じないこ
と)が発生するからである。還元剤の濃度を0.01〜
0.04mol/lとする理由は、0.01mol/l
未満では、未析やめっき反応の停止が生じるが、0.0
4mol/以下では、ノジュール、分解が生じるからで
ある。In the present invention, the concentration of copper ions is set to 0.
The reason for setting it to 01 to 0.015 mol / l is that when the copper ion concentration is less than 0.01 mol / l, the deposition rate decreases,
Plating becomes difficult and copper ion concentration is 0.015m
This is because if it is ol / l or more, non-deposition (no plating reaction occurs) occurs. The concentration of the reducing agent is 0.01 to
The reason for setting 0.04 mol / l is 0.01 mol / l
If it is less than 0.0, unsedimentation and termination of the plating reaction occur, but 0.0
This is because nodules and decomposition occur at 4 mol / or less.
【0007】また、pH調整剤の濃度が、0.25〜
0.35mol/lであることが必要である理由は、
0.25mol/l未満では、未析が生じ、また0.3
5mol/lを越えるとノジュール発生やめっきレジス
ト等の本来めっきが析出するべきでない部分にまでめっ
き粒子が付着するという現象(異常析出)が見られるか
らある。The concentration of the pH adjusting agent is 0.25 to 0.25.
The reason why it is necessary to be 0.35 mol / l is
If it is less than 0.25 mol / l, non-segregation occurs, and 0.3
This is because when it exceeds 5 mol / l, phenomena such as generation of nodules and plating particles adhering to portions where plating should not be originally deposited such as plating resist (abnormal deposition) are observed.
【0008】本願発明においては、銅イオン濃度、還元
剤濃度とも、公知技術に比較して低濃度である。特開H
1−168871号、特開S64−52081号では、
銅イオン濃度は、0.005〜0.1M、ホルマリン濃
度は0.05〜0.3Mであることが記載されている
が、ホリマリン濃度が高すぎて、ノジュールが多く発生
し、めっき浴の分解(めっき浴中の金属が自然に析出し
てしまうこと)も生じる。In the present invention, both the copper ion concentration and the reducing agent concentration are lower than those in the known art. JP H
In No. 1-168871 and Japanese Patent Laid-Open No. S64-52081,
It is described that the copper ion concentration is 0.005 to 0.1 M and the formalin concentration is 0.05 to 0.3 M, but the formalin concentration is too high, and a large amount of nodules are generated, resulting in decomposition of the plating bath. (The metal in the plating bath spontaneously precipitates).
【0009】さらに、特開S63−241188号で
は、銅イオン濃度は、0.02〜0.07M、ホルマリ
ン濃度は0.02〜0.5Mであり、銅イオン濃度が高
くなり過ぎて、未析やめっき反応の停止が生じるのであ
る。このように、本願発明では、銅イオン濃度とホルマ
リン濃度の両方を公知技術に比べて低濃度とすることに
より、めっき析出速度を低下させることなく、浴分解、
異常析出によるノジュールの発生を抑制することができ
るのである。Further, in JP-A-63-241188, the copper ion concentration is 0.02 to 0.07M and the formalin concentration is 0.02 to 0.5M. And the stop of the plating reaction occurs. As described above, in the present invention, by lowering both the copper ion concentration and the formalin concentration as compared with known techniques, bath decomposition without lowering the plating deposition rate,
The generation of nodules due to abnormal precipitation can be suppressed.
【0010】このため、特に線間/線幅が100μm/
100μm以下の微細な導体回路を持つプリント配線板
の導体回路形成に使用する場合は有利である。線間がせ
まいため、ノジュールの発生によりショートが発生しや
すいが、本願発明の条件ではこのようなノジュールは発
生しないからである。For this reason, especially the line spacing / line width is 100 μm /
It is advantageous when used for forming a conductor circuit of a printed wiring board having a fine conductor circuit of 100 μm or less. This is because short lines are likely to occur due to the generation of nodules due to the small distance between the lines, but such nodules do not occur under the conditions of the present invention.
【0011】なお、線間/線幅が100μm/100μ
m以下とは、線の幅が100μm以下で、かつ線間が1
00μm以下であることを言う。The line spacing / line width is 100 μm / 100 μ
m or less means that the line width is 100 μm or less and the line spacing is 1
It means that it is less than 00 μm.
【0012】さらに、本願発明の銅イオン濃度と還元剤
濃度範囲を持つめっき浴は、次の構成において、特に有
利である。即ち、「基材上に、無電解めっき用接着剤層
を形成した後、この基材を無電解めっき液中に浸漬して
無電解めっきを行う方法において、後述する表面が粗化
処理された無電解めっき用接着剤層の粗化面に、一次め
っき膜としてやはり後述する銅−ニッケル(あるいはコ
バルト)−リンのような複合金属を析出させ、この一次
めっき膜の上に請求項1〜6のいずれか一つの無電解め
っき液銅のめっき膜を形成する」ものである。Further, the plating bath having the copper ion concentration and the reducing agent concentration range of the present invention is particularly advantageous in the following constitution. That is, "in a method of forming an adhesive layer for electroless plating on a base material and then performing electroless plating by immersing this base material in an electroless plating solution, the surface described below was subjected to a roughening treatment. A composite metal such as copper-nickel (or cobalt) -phosphorus, which will also be described later, is deposited as a primary plating film on the roughened surface of the adhesive layer for electroless plating, and the primary plating film is coated with a composite metal. Forming an electroless plating solution copper plating film. "
【0013】このような一次めっき膜は、無電解めっき
用接着剤層の粗化面に対する追従性に優れ、粗化面の形
態をそのままトレースする。そのため、一次めっき膜
は、粗化面と同様にアンカーを持つ(図3参照)。従っ
て、この一次めっき膜上に形成される二次めっき膜は、
このアンカーの空間に対して充填性に優れなければなら
ない。もし十分に充填されなければ、一次めっき膜と二
次めっき膜の間に空隙が残存してしまい、剥離や導通不
良の原因となる。本願のめっき浴の範囲により得られる
めっき膜は、析出粒子が非常に微細であり、充填性に優
れるため、剥離や導通不良もなく、また析出速度も速い
ため、生産性に優れる。Such a primary plating film has excellent followability to the roughened surface of the adhesive layer for electroless plating, and traces the morphology of the roughened surface as it is. Therefore, the primary plating film has anchors like the roughened surface (see FIG. 3). Therefore, the secondary plating film formed on this primary plating film is
The space of this anchor must have good filling properties. If it is not sufficiently filled, voids remain between the primary plating film and the secondary plating film, causing peeling and poor conduction. The plating film obtained by the range of the plating bath of the present application has very fine deposited particles and excellent filling properties, and therefore has no peeling or poor conduction, and has a high deposition rate, and thus has excellent productivity.
【0014】本願発明で使用されるトリアルカノールア
ミンは、トリエタノールアミン(TEA)、トリイソパ
ノールアミン(TIA)、トリメタノールアミン(TM
A)、トリプロパノールアミン(TPA)から選ばれる
少なくとも1種であることが望ましい。これは錯化力に
優れるからである。また、これらは、強塩基性条件化で
のみ錯体を形成するため、中性条件では錯体とはなら
ず、導体回路上に残留しないため、導通不良やマイグレ
ーションなどを生じることがないからである。The trialkanolamines used in the present invention are triethanolamine (TEA), triisopropanolamine (TIA), trimethanolamine (TM).
At least one selected from A) and tripropanolamine (TPA) is desirable. This is because the complexing power is excellent. Further, since they form a complex only under the strongly basic condition, they do not become a complex under the neutral condition and do not remain on the conductor circuit, so that conduction failure and migration do not occur.
【0015】また、還元剤は、アルデヒド、次亜リン酸
塩(ホスフィン酸塩と呼ばれる)、水素化ホウ素塩、ヒ
ドラジンから選ばれる少なくとも1種であることが望ま
しい。これらの還元剤は、水溶性であり、還元力に優れ
るからである。また、Ni化合物を使用する場合は、次
亜リン酸塩を使用する。前記無電解めっき液には、鉄化
合物および/又はビピリジルを含有してなることが望ま
しい。この理由は、ビピリジルはめっき浴中の金属酸化
物の発生を抑制してノジュールの発生を抑制できるから
であり、鉄化合物は、反応開始剤であるとともに、浴分
解を抑制することができる。The reducing agent is preferably at least one selected from aldehydes, hypophosphites (called phosphinates), borohydride salts, and hydrazine. This is because these reducing agents are water-soluble and have excellent reducing power. If a Ni compound is used, hypophosphite is used. The electroless plating solution preferably contains an iron compound and / or bipyridyl. The reason for this is that bipyridyl can suppress the generation of metal oxides in the plating bath and suppress the generation of nodules, and the iron compound is a reaction initiator and can suppress bath decomposition.
【0016】鉄化合物としては、フェロシアン化カリウ
ムやフェリシアン化カリウムなどが好ましい。前記pH
調整剤は、水酸化ナトリウム、水酸化カリウム、水酸化
カルシウムから選ばれる少なくとも1種であり、塩基性
化合物である。トリアルカノールアミンは、塩基性条件
下で錯体を形成するからである。前記トリアルカノール
アミンの濃度が0.1〜0.8Mであることが望まし
い。トリアルカノールアミンの濃度が上記範囲でなけれ
ば析出反応が生じないからである。The iron compound is preferably potassium ferrocyanide or potassium ferricyanide. The pH
The adjusting agent is at least one selected from sodium hydroxide, potassium hydroxide and calcium hydroxide, and is a basic compound. This is because the trialkanolamine forms a complex under basic conditions. It is preferable that the concentration of the trialkanolamine is 0.1 to 0.8M. This is because the precipitation reaction does not occur unless the concentration of trialkanolamine is in the above range.
【0017】銅イオン、ニッケルイオン、コバルトイオ
ンは、硫酸銅、硫酸ニッケル、硫酸コバルト、塩化銅、
塩化ニッケル、塩化コバルトなどの銅、ニッケル、コバ
ルト化合物を溶解させることにより供給する。本願発明
の無電解めっき液の使用方法としては、表面が粗化処理
された無電解めっき用接着剤層の上に、必要に応じて触
媒核を付与して、これを本願発明の請求項1〜6に記載
された無電解めっき液からなるめっき浴に浸漬してめっ
き膜を析出させる手段が一般的である。このような無電
解めっき液を使用することにより、未析や反応停止、浴
分解等がなく、ノジュールのないめっき膜を得ることが
できる。Copper ion, nickel ion, and cobalt ion are copper sulfate, nickel sulfate, cobalt sulfate, copper chloride,
Supplied by dissolving copper, nickel and cobalt compounds such as nickel chloride and cobalt chloride. As a method of using the electroless plating solution of the present invention, a catalyst nucleus is provided on the adhesive layer for electroless plating whose surface has been roughened, if necessary, and this is used in claim 1 of the present invention. Generally, a means for precipitating a plating film by immersing in a plating bath composed of the electroless plating solution described in any of 1 to 6 is used. By using such an electroless plating solution, it is possible to obtain a plating film without no deposition, reaction termination, bath decomposition, etc.
【0018】本願発明の無電解めっき液を使用した好適
なめっき方法は、「基材上に表面が粗化処理された無電
解めっき用接着剤層を形成し、この無電解めっき用接着
剤層の上に一次めっきを施した後に、この一次めっき膜
に対して二次めっきを行う無電解めっき方法において、
前記二次めっきとして、本願発明の請求項1〜6の無電
解めっき液を使用することを特徴とする」ものである。A preferred plating method using the electroless plating solution of the present invention is to form an adhesive layer for electroless plating whose surface is roughened on a substrate, and to use this adhesive layer for electroless plating. In the electroless plating method of performing secondary plating on this primary plating film after performing primary plating on
The electroless plating solution according to claims 1 to 6 of the present invention is used as the secondary plating ".
【0019】一次めっき膜は、無電解めっき用接着剤の
粗化面に直接接触するため、このめっき膜の強度がピー
ル強度を支配する。このため、一次めっき膜は、微細結
晶粒子で強度が高いことが望ましい。銅−ニッケル(あ
るいはコバルト)−リンのような複合金属は、このよう
な条件を満たし、ピール強度向上を実現できる。Since the primary plating film directly contacts the roughened surface of the adhesive for electroless plating, the strength of the plating film controls the peel strength. For this reason, it is desirable that the primary plating film be fine crystal grains and have high strength. A composite metal such as copper-nickel (or cobalt) -phosphorus can satisfy such conditions and improve peel strength.
【0020】しかし、前述のようにこのような一次めっ
き膜は、無電解めっき用接着剤層の粗化面に対する追従
性に優れ、粗化面の形態をそのままトレースする。その
ため、一次めっき膜は、粗化面と同様にアンカーを持つ
(図3参照)。従って、この一次めっき膜上に形成され
る二次めっき膜は、このアンカーの空間に対して充填性
に優れなければならない。それゆえ、本願発明のめっき
液を二次めっき液として使用すると、析出粒子が非常に
微細であり、充填性に優れるため、剥離や導通不良もな
く、また析出速度も速いため、生産性に優れるのであ
る。However, as described above, such a primary plating film has excellent followability to the roughened surface of the adhesive layer for electroless plating, and traces the morphology of the roughened surface as it is. Therefore, the primary plating film has anchors like the roughened surface (see FIG. 3). Therefore, the secondary plating film formed on the primary plating film must be excellent in filling the space of the anchor. Therefore, when the plating solution of the present invention is used as the secondary plating solution, the deposited particles are very fine and the filling property is excellent, so there is no peeling or conduction failure, and the deposition rate is also high, resulting in excellent productivity. Of.
【0021】前記一次めっき液としては、ヒドロキシカ
ルボン酸を錯化剤とし、銅イオン、ニッケルイオン、コ
バルトイオンから選ばれる少なくとも2種以上を金属
源、還元剤、pH調整剤を含むことが望ましい。ヒドロ
キシカルボン酸としては、クエン酸、酒石酸、リンゴ酸
等がよい。還元剤は、ホスフィン酸ナトリウムなどの次
亜リン酸塩、ホルムアルデヒドなどのアルデヒド、ヒド
ラジンなどがよい。pH調整剤としては、水酸化ナトリ
ウム、炭酸ナトリム、アンモニアなどの塩基性化合物が
よい。The primary plating solution preferably contains hydroxycarboxylic acid as a complexing agent and at least two or more selected from copper ions, nickel ions and cobalt ions as a metal source, a reducing agent and a pH adjusting agent. As the hydroxycarboxylic acid, citric acid, tartaric acid, malic acid and the like are preferable. The reducing agent is preferably a hypophosphite such as sodium phosphinate, an aldehyde such as formaldehyde, or hydrazine. As the pH adjuster, basic compounds such as sodium hydroxide, sodium carbonate and ammonia are preferable.
【0022】また、一次めっき浴には、請求項10に記
載するように、鉄化合物および/又はビピリジルを含有
してなることが望ましい。この理由は、ビピリジルはめ
っき浴中の金属酸化物の発生を抑制してノジュールの発
生を抑制できるからであり、鉄化合物は、反応開始剤で
あるとともに、浴分解を抑制することができる。鉄化合
物としては、フェロシアン化カリウムやフェリシアン化
カリウムなどが好ましい。Further, it is desirable that the primary plating bath contains an iron compound and / or bipyridyl as described in claim 10. The reason for this is that bipyridyl can suppress the generation of metal oxides in the plating bath and suppress the generation of nodules, and the iron compound is a reaction initiator and can suppress bath decomposition. As the iron compound, potassium ferrocyanide, potassium ferricyanide and the like are preferable.
【0023】さらに一次めっき浴には、硝酸鉛、酢酸鉛
等の鉛化合物を含有することが望ましい。ニッケルイオ
ンが自然析出することを防止できるからである。ついで
プリント配線板の製造方法について説明する。Further, it is desirable that the primary plating bath contains a lead compound such as lead nitrate or lead acetate. This is because it is possible to prevent nickel ions from spontaneously precipitating. Next, a method for manufacturing the printed wiring board will be described.
【0024】表面が粗化処理された無電解めっき用接着
剤層を基板上に形成し、これに、触媒核を付与して、こ
れを本願発明の本願発明の請求項1〜6の無電解めっき
液からなるめっき浴に浸漬してめっき膜を析出させて導
体回路を形成する方法が一般的である。このような無電
解めっき液を使用することにより、未析や反応停止、浴
分解等がなく、ノジュールのない導体回路を得ることが
できる。An electroless plating adhesive layer having a roughened surface is formed on a substrate, and a catalyst nucleus is added to the adhesive layer, which is used for electroless plating according to claims 1 to 6 of the present invention. A general method is to form a conductor circuit by immersing in a plating bath containing a plating solution to deposit a plating film. By using such an electroless plating solution, it is possible to obtain a conductor circuit without no deposition, reaction termination, bath decomposition, etc.
【0025】また、基板上に表面が粗化処理された無電
解めっき用接着剤層を形成し、この無電解めっき用接着
剤層の上に一次めっきを施した後に、この一次めっき膜
に対して二次めっきを行うプリント配線板の製造方法に
おいて、前記二次めっきとして、本願発明の請求項1〜
6の無電解めっき液を使用することを特徴とする。Further, an adhesive layer for electroless plating whose surface is roughened is formed on a substrate, and the primary plating is applied to the adhesive layer for electroless plating. In a method for manufacturing a printed wiring board, which performs secondary plating by means of a secondary plating method, the secondary plating method according to claim 1 to 2 of the present invention.
The electroless plating solution of No. 6 is used.
【0026】基板は、銅張積層板をエッチングして銅パ
ターンとするか、ガラスエポキシ基板、ポリイミド基
板、セラミック基板、金属基板などに無電解めっき用接
着剤層を形成し、これを粗化して粗化面を形成し、ここ
に無電解めっきを施して銅パターンとすることもでき
る。As a substrate, a copper clad laminate is etched to form a copper pattern, or an adhesive layer for electroless plating is formed on a glass epoxy substrate, a polyimide substrate, a ceramic substrate, a metal substrate, etc. and roughened. It is also possible to form a roughened surface and subject it to electroless plating to form a copper pattern.
【0027】ついで、基板上に無電解めっき用接着剤層
を形成する。無電解めっき用接着剤は、酸あるいは酸化
剤に可溶性の耐熱性樹脂(耐熱性樹脂マトリックス)中
に予め硬化処理された耐熱性樹脂粒子を含有してなるも
のが望ましく、これを塗布あるいはフィルム化したもの
を積層することにより行う。耐熱性樹脂粒子を溶解除去
して蛸壺状のアンカーを形成することにより行うことが
できる。Next, an adhesive layer for electroless plating is formed on the substrate. It is desirable that the adhesive for electroless plating contains heat-resistant resin particles that have been pre-cured in a heat-resistant resin (heat-resistant resin matrix) that is soluble in acid or oxidant. This is done by stacking the above. The heat-resistant resin particles can be dissolved and removed to form an octopus-shaped anchor.
【0028】前記耐熱性樹脂粒子としては、平均粒径
が10μm以下の耐熱性樹脂粉末、平均粒径が2μm
以下の耐熱性樹脂粉末を凝集させて平均粒径が前記粒子
の粒子径の3倍以上の大きさとした凝集粒子、平均粒
径が10μm以下の耐熱性粉末樹脂粉末と、平均粒径が
前記粒子の粒子径の1/5以下かつ2μm以下の耐熱性
樹脂粉末との混合物、平均粒径が2μm〜10μmの
耐熱性樹脂粉末の表面に、平均粒径が2μm以下の耐熱
性樹脂粉末または無機粉末のいずれか少なくとも1種を
付着させてなる疑似粒子から選ばれることが望ましい。As the heat-resistant resin particles, a heat-resistant resin powder having an average particle diameter of 10 μm or less, and an average particle diameter of 2 μm
Aggregated particles obtained by aggregating the following heat-resistant resin powders to have an average particle size of 3 times or more the particle size of the particles, heat-resistant powder resin powders having an average particle size of 10 μm or less, and the particles having an average particle size of the particles A mixture with a heat resistant resin powder having a particle diameter of ⅕ or less and 2 μm or less, a heat resistant resin powder having an average particle diameter of 2 μm or less or an inorganic powder on the surface of the heat resistant resin powder having an average particle diameter of 2 μm to 10 μm. It is desirable to be selected from pseudo particles formed by adhering at least one of the above.
【0029】また、耐熱性樹脂マトリックスとしては、
感光性樹脂が望ましい。露光、現像によりバイアホール
形成用の孔を形成できるからである。Further, as the heat resistant resin matrix,
Photosensitive resin is desirable. This is because the holes for forming via holes can be formed by exposure and development.
【0030】前記耐熱性樹脂マトリックスとしては、エ
ポキシ樹脂、ポリイミド樹脂、エポキシアクリレート樹
脂などの熱硬化性樹脂、あるいはこれらにポリエーテル
スルフォンなどの熱可塑性樹脂を混合した複合体などが
望ましく、また耐熱性樹脂粒子としては、エポキシ樹
脂、アミノ樹脂(メラミン樹脂、尿素樹脂、グアナミン
樹脂)などがよい。The heat-resistant resin matrix is preferably a thermosetting resin such as an epoxy resin, a polyimide resin or an epoxy acrylate resin, or a composite of a mixture of these with a thermoplastic resin such as polyether sulfone. Epoxy resin, amino resin (melamine resin, urea resin, guanamine resin) and the like are preferable as the resin particles.
【0031】なお、エポキシ樹脂は、そのオリゴマーの
種類、硬化剤の種類、架橋密度を変えることにより任意
に酸や酸化剤に対する溶解度を変えることができる。例
えば、ビスフェノールA型エポキシ樹脂オリゴマーをア
ミン系硬化剤で硬化処理したものは、酸化剤に溶解しや
すい。しかし、ノボラックエポキシ樹脂オリゴマーをイ
ミダゾール系硬化剤で硬化させたものは、酸化剤に溶解
しにくい。The solubility of the epoxy resin in an acid or an oxidizing agent can be arbitrarily changed by changing the kind of the oligomer, the kind of the curing agent and the crosslinking density. For example, a bisphenol A-type epoxy resin oligomer cured with an amine-based curing agent is easily dissolved in an oxidizing agent. However, the novolak epoxy resin oligomer cured with an imidazole-based curing agent is hardly dissolved in the oxidizing agent.
【0032】本願発明で使用される酸は、リン酸、塩
酸、硫酸、又は蟻酸、酢酸などの有機酸があるが特に有
機酸が望ましい。粗化処理した場合に、バイアホールか
ら露出する金属導体層を腐食させにくいからである。The acid used in the present invention includes phosphoric acid, hydrochloric acid, sulfuric acid, or organic acids such as formic acid and acetic acid, and the organic acid is particularly preferable. This is because when the roughening treatment is performed, the metal conductor layer exposed from the via hole is hardly corroded.
【0033】また、酸化剤は、クロム酸、過マンガン酸
塩(過マンガン酸カリウムなど)、が望ましい。特に、
アミノ樹脂を溶解除去する場合は、酸と酸化剤で交互に
粗化処理することが望ましい。The oxidant is preferably chromic acid or permanganate (eg potassium permanganate). Especially,
When the amino resin is removed by dissolution, it is desirable to perform a roughening treatment alternately with an acid and an oxidizing agent.
【0034】このように形成された粗化面に、触媒核を
付与する。触媒核は、貴金属イオンやコロイドなどが望
ましく、一般的には、塩化パラジウムやパラジウムコロ
イドを使用する。触媒核を固定するために加熱処理を行
うことが望ましい。Catalyst nuclei are provided on the roughened surface thus formed. The catalyst nucleus is preferably a noble metal ion or a colloid, and generally uses palladium chloride or a palladium colloid. It is desirable to perform a heat treatment to fix the catalyst core.
【0035】次にめっきレジストを塗布あるいはフィル
ム状にしたものを積層した後、露光、現像してめっきレ
ジストパターンを設ける。めっきレジストが形成されて
いない部分に一次めっきを施す。さらに、銅パターンだ
けでなく、バイアホールを形成して多層プリント配線板
を製造することもできる。Next, a plating resist is applied or laminated in the form of a film, which is then exposed and developed to provide a plating resist pattern. Primary plating is applied to the portion where the plating resist is not formed. Furthermore, not only the copper pattern but also via holes can be formed to manufacture a multilayer printed wiring board.
【0036】[0036]
【発明の実施の形態】以下、本発明をプリント配線板の
製造プロセスにおける無電解めっき方法に具体化した実
施例を詳細に説明する。 (実施例)本実施形態では、フルアディティブプロセス
によってプリント配線板の導体パターンを作製してい
る。以下、そのプロセスを順を追って説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments in which the present invention is embodied in an electroless plating method in a printed wiring board manufacturing process will be described in detail below. (Example) In this embodiment, a conductor pattern of a printed wiring board is manufactured by a full additive process. Hereinafter, the process will be described step by step.
【0037】(1)まず、基材としてのガラスエポキシ
板上に、アディティブ用の接着剤を塗布する。接着剤の
調製は次のように行った。ジエチレングリコールジメチ
ルエーテル(DMDG)に溶解したクレゾールノボラッ
ク型エポキシ樹脂(日本化薬製 分子量2500)の25
%アクリル化物を70重量部、ポリエーテルスルフォン
(PES)30重量部、イミダゾール硬化剤(四国化成
製、商品名:2E4MZ-CN)4重量部、、感光製モノマーで
あるカプロラクトン変成トリス(アクロキシエチル)イ
ソシアヌレート(東亜合成製、商品名;アロニックスM
325)10重量部、光開始剤としてのベンゾフェノン
(関東化学製)5重量部、光増感剤ミヒラーケトン(関
東化学製)0.5重量部、さらにこの混合物に対してメ
ラミン樹脂粒子の平均粒径5.5μmを35重量部、平
均粒径0.5μmのものを5重量部を混合した後、NM
Pを添加しながら混合し、ホモディスパー攪拌機で粘度
2000 CPSに調整し、続いて、3本ロールで混練す
る。(1) First, an adhesive for additive is applied on a glass epoxy plate as a base material. The adhesive was prepared as follows. 25 of cresol novolac type epoxy resin (Nippon Kayaku molecular weight 2500) dissolved in diethylene glycol dimethyl ether (DMDG)
% Acrylate, 70 parts by weight of polyether sulfone (PES), 4 parts by weight of imidazole curing agent (manufactured by Shikoku Kasei, product name: 2E4MZ-CN), and caprolactone modified tris (acryloxyethyl) as a photosensitive monomer. ) Isocyanurate (Toagosei, trade name; Aronix M
325) 10 parts by weight, 5 parts by weight of benzophenone (manufactured by Kanto Kagaku) as a photoinitiator, 0.5 part by weight of photosensitizer Michler's ketone (manufactured by Kanto Kagaku), and the average particle size of melamine resin particles with respect to this mixture. After mixing 35 parts by weight of 5.5 μm and 5 parts by weight of an average particle size of 0.5 μm, NM
Mix while adding P, adjust the viscosity to 2000 CPS with a homodisper stirrer, and then knead with three rolls.
【0038】(2)この接着剤溶液を、めっき工程を終
えた基材を水洗・乾燥した後、基材2上に、ロールコー
ターを用いて塗布し、水平状態で20分間放置してから、
60℃で乾燥(プリベーク)を行なった。(2) This adhesive solution was washed with water and dried on the base material that had been subjected to the plating process, and then applied on the base material 2 using a roll coater, and left standing in a horizontal state for 20 minutes,
Drying (prebaking) was performed at 60 ° C.
【0039】(3)前記(2)の処理を施した配線板
に、超高圧水銀灯400mj /cm2 で露光した。さらに、前
記配線板を超高圧水銀灯により約3000mj/cm2 で露光
し、100 ℃で1時間、その後150 ℃で5時間の加熱処理
(ポストベーク)することによりフォトマスクフィルム
に相当する寸法精度に優れた開口を有する厚さ50μm
の樹脂接着剤層を形成した。(3) The wiring board subjected to the treatment of (2) above was exposed with an ultrahigh pressure mercury lamp of 400 mj / cm 2 . Further, the wiring board was exposed to light of about 3000 mj / cm 2 by an ultra-high pressure mercury lamp, and heat-treated (post-baked) at 100 ° C. for 1 hour and then at 150 ° C. for 5 hours to obtain dimensional accuracy equivalent to that of a photomask film. 50 μm thickness with excellent opening
The resin adhesive layer of was formed.
【0040】この接着剤は、クロム酸やリン酸等のよう
な粗化液に対して難溶の樹脂マトリックス中に、粗化液
に対して可溶の樹脂フィラーを分散させたものである。
この場合、次いで、常法に従ってクロム酸、過マンガン
酸カリウム等による表面粗化処理を行い、接着剤層2中
の樹脂フィラーを溶解させる。具体的にはpH=13に
調整した過マンガン酸カリウム(KMnO4 、60 g/l )に
70℃で1分間浸漬し、ついでリン酸に30分浸漬して樹
脂フィラーを溶解除去し、接着剤層の表面に微細なアン
カーが多数形成された粗化面を形成する。This adhesive is obtained by dispersing a resin filler soluble in the roughening liquid in a resin matrix which is hardly soluble in the roughening liquid such as chromic acid and phosphoric acid.
In this case, a surface roughening treatment with chromic acid, potassium permanganate or the like is then carried out by a conventional method to dissolve the resin filler in the adhesive layer 2. Specifically, add potassium permanganate (KMnO 4 , 60 g / l) adjusted to pH = 13.
Immersion at 70 ° C. for 1 minute and then immersion in phosphoric acid for 30 minutes to dissolve and remove the resin filler to form a roughened surface on which a large number of fine anchors are formed on the surface of the adhesive layer.
【0041】次いで、無電解めっき金属の最初の析出に
必要な触媒核を付与した後、感光性エポキシや感光性ポ
リイミド等の感光性樹脂を塗布し、露光・現像を行う。
その結果、に示されるように、部分的に開口部を有する
永久レジストを接着剤層の上面に形成する。Next, after providing the catalyst nuclei necessary for the first deposition of the electroless plated metal, a photosensitive resin such as photosensitive epoxy or photosensitive polyimide is applied, and exposure and development are performed.
As a result, a permanent resist partially having openings is formed on the upper surface of the adhesive layer, as shown in FIG.
【0042】具体的には次のような手順に従った。DM
DG(ジメチルグリコールジメチルエーテル)に溶解さ
せたクレゾールノボラック型エポキシ樹脂(日本化薬製
商品名 EOCN−103S)のエポキシ基25%を
アクリル化した感光性付与のオリゴマー(分子量400
0)、PES(分子量17000)、イミダゾール系硬
化剤(四国化成製 商品名 2PMHZ−PW)、感光
性モノマーであるアクリル化イソシアネート(東亜合成
製商品名 アロニックス M215)、光開始剤として
ベンゾフェノン(関東化学製)、光増感剤ミヒラーケト
ン(関東化学製)を用い、下記組成でNMPを用いて混
合した後、ホモディスパー攪拌機で粘度3000cps
に調整し、続いて3本ロールで混練して、液状レジスト
を得た。 樹脂組成物:感光性エポキシ/PES/M325/BP
/MK/イミダゾール=70/30/10/5/0.5
/5 この液状レジストを前記(7)の樹脂絶縁層上にロール
コーターを用いて塗布し、60℃で乾燥させて厚さ約3
0μmのレジスト層を形成した。さらに、L/S=50
/50の導体回路パターンが描画されたマスクフィルム
を密着させ、超高圧水銀灯1000mJ/cm2 で露光
した。これをトリエチレングリコールジメチルエーテル
(DMTG)でスプレー現像処理することにより、配線
板上に導体回路パターン部の抜けためっき用レジストを
形成した。さらに超高圧水銀灯により、6000mJ/
cm2 で露光し、1000℃で1時間、その後150℃
で3時間の加熱処理を行った。このレジスト用樹脂を用
いて永久レジストを形成した。Specifically, the following procedure was followed. DM
A cresol novolac type epoxy resin (manufactured by Nippon Kayaku, trade name: EOCN-103S) dissolved in DG (dimethyl glycol dimethyl ether) is sensitized with 25% of the epoxy groups acrylated (molecular weight 400.
0), PES (molecular weight 17,000), imidazole type curing agent (Shikoku Kasei product name 2 PMHZ-PW), photosensitive monomer acrylated isocyanate (Toagosei product name Aronix M215), benzophenone (Kanto Chemical Co., Inc.) as a photoinitiator. , A photosensitizer Michler Ketone (manufactured by Kanto Kagaku), and mixed with NMP with the following composition, and then the viscosity is 3000 cps with a homodisper agitator.
And then kneading with a three-roll mill to obtain a liquid resist. Resin composition: Photosensitive epoxy / PES / M325 / BP
/MK/imidazole=70/30/10/5/0.5
/ 5 This liquid resist is applied onto the resin insulation layer of (7) above using a roll coater and dried at 60 ° C. to a thickness of about 3
A 0 μm resist layer was formed. Furthermore, L / S = 50
A mask film on which a conductor circuit pattern of / 50 was drawn was brought into close contact and exposed with an ultrahigh pressure mercury lamp of 1000 mJ / cm 2 . This was spray-developed with triethylene glycol dimethyl ether (DMTG) to form a plating resist with a missing conductor circuit pattern portion on the wiring board. Furthermore, with an ultra-high pressure mercury lamp, 6000 mJ /
cm 2 for 1 hour at 1000 ° C, then 150 ° C
Was heat-treated for 3 hours. A permanent resist was formed using this resist resin.
【0043】次いで、従来公知のめっき前処理を行った
後、開口部に対する一次めっきを行う。ここで、一次め
っき用のめっき浴としては、クエン酸を錯化剤として含
み無電解銅−ニッケル−リン合金めっき浴が使用され
る。Then, after performing a conventionally known plating pretreatment, primary plating is performed on the openings. Here, as a plating bath for primary plating, an electroless copper-nickel-phosphorus alloy plating bath containing citric acid as a complexing agent is used.
【0044】本実施形態においては、一次めっきとして
具体的には下記の組成を有する無電解銅−ニッケル合金
めっき浴が用いられている。めっき浴の温度は50℃〜
80℃であり、めっき浸漬時間は20分〜120分であ
る。 金属塩…CuSO4 ・5H2 O; 1.8mM …NiSO4 ・6H2 O; 51.0mM 錯化剤…クエン酸 0.33M 還元剤…ホスフィン酸Na一水和物;0.2M pH調節剤…NaOH; 0.75M その他…安定剤(ビピリジル、フェロシアン化カリウム
等)少量。 析出速度は、1.5μm/時間In this embodiment, an electroless copper-nickel alloy plating bath having the following composition is specifically used as the primary plating. The temperature of the plating bath is 50 ℃
The temperature is 80 ° C., and the plating immersion time is 20 minutes to 120 minutes. Metal salt ... CuSO 4 .5H 2 O; 1.8 mM NiSO 4 .6H 2 O; 51.0 mM Complexing agent ... Citric acid 0.33M reducing agent ... Phosphinic acid Na monohydrate; 0.2M pH adjusting agent ... NaOH; 0.75M Others ... A small amount of stabilizers (bipyridyl, potassium ferrocyanide, etc.). Deposition rate is 1.5 μm / hour
【0045】以上の条件でめっきを行うことによって、
レジスト非形成部分である開口部に厚さ約2μmの銅−
ニッケル−リンめっき薄膜が形成される。この後、ガラ
スエポキシ板をめっき浴から引き上げ、表面に付着して
いるめっき浴を水で洗い流す。By plating under the above conditions,
Copper with a thickness of about 2 μm is formed in the opening where the resist is not formed.
A nickel-phosphorus plated thin film is formed. Then, the glass epoxy plate is pulled up from the plating bath, and the plating bath adhering to the surface is washed off with water.
【0046】次いで、ガラスエポキシ板を酸性溶液で処
理する活性化処理によって、銅−ニッケル−リンめっき
薄膜表層の酸化皮膜を除去する。その後、Pd置換を行
うことなく、銅−ニッケル−リンめっき薄膜上に対する
二次めっきを行う。ここで二次めっき用のめっき浴とし
ては、本願発明の無電解銅めっき浴が使用される。本実
施例においては、二次めっきとして具体的には下記の組
成を有するめっき浴が用いられている。めっき浴の温度
は50℃〜70℃であり、めっき浸漬時間は90分〜3
60分である。 金属塩…CuSO4 ・5H2 O; 8.6mM 錯化剤…TEA; 0.15M 還元剤…HCHO; 0.02M その他…安定剤(ビピリジル、フェロシアン化カリウム
等)少量。 析出速度は、6μm/時間Then, the oxide film on the surface layer of the copper-nickel-phosphorus plating thin film is removed by activating the glass epoxy plate with an acidic solution. Then, secondary plating is performed on the copper-nickel-phosphorus plating thin film without performing Pd substitution. Here, the electroless copper plating bath of the present invention is used as the plating bath for the secondary plating. In this embodiment, a plating bath having the following composition is specifically used as the secondary plating. The temperature of the plating bath is 50 ° C to 70 ° C, and the plating immersion time is 90 minutes to 3
60 minutes. Metal salt ... CuSO 4 .5H 2 O; 8.6 mM Complexing agent ... TEA; 0.15M Reducing agent ... HCHO; 0.02M Other ... Stabilizer (bipyridyl, potassium ferrocyanide, etc.) A small amount. Deposition rate is 6 μm / hour
【0047】以上の条件でめっきを行うことによって、
に示されるように、一次めっき膜である銅−ニッケル−
リンめっき薄膜の表面に銅めっき膜が形成される。従っ
て、2種の金属層からなる導体パターンが得られる。光
学顕微鏡観察の結果、ノジュールや銅の異常析出は観察
されなかった(図1参照)。また、めっき浴が非常に安
定で、めっき浴の分解は生じなかった。By plating under the above conditions,
As shown in, the primary plating film of copper-nickel-
A copper plating film is formed on the surface of the phosphorous plating thin film. Therefore, a conductor pattern composed of two kinds of metal layers can be obtained. As a result of optical microscope observation, no abnormal deposition of nodules or copper was observed (see FIG. 1). In addition, the plating bath was very stable and no decomposition of the plating bath occurred.
【0048】さらに、クロスカットを光学顕微鏡で観察
したが、一次めっき膜と二次めっき膜との界面に空隙等
は見られなかった。クロスカット(断面)の写真は、本
願明細書では記載しない。一次めっき膜と二めっき膜の
相違が確認しにくいからである。そこで、模式図を図3
に記載することとした。図3は、基板1上に表面に粗化
面3を持つ無電解めっき用接着剤2が形成され、その上
に一次めっき膜4、二次めっき膜5が存在する。さら
に、めっき膜はめっきレジスト6の間に形成される。さ
らに、ピール強度を測定すると、1.8kg/cmであ
った。ピール強度の測定は、JIS−C−6481に準
拠した。Further, the cross-cut was observed with an optical microscope, but no voids or the like were found at the interface between the primary plating film and the secondary plating film. Cross-cut (cross-section) photographs are not described herein. This is because it is difficult to confirm the difference between the primary plating film and the secondary plating film. Therefore, a schematic diagram is shown in FIG.
It was decided to describe in. In FIG. 3, an adhesive 2 for electroless plating having a roughened surface 3 on the surface is formed on a substrate 1, and a primary plating film 4 and a secondary plating film 5 are present thereon. Further, the plating film is formed between the plating resists 6. Furthermore, the peel strength was measured and found to be 1.8 kg / cm. The peel strength was measured according to JIS-C-6481.
【0049】(比較例1)基本的には実施例1と同様で
あるが、銅イオン濃度を、0.003Mとした。この場
合、めっき浴の建浴後、5時間程度でめっき液中の金属
イオンが析出して浴分解してしまった。さらに、建浴
後、ただちにめっきを行ったところ、ノジュールはない
が、めっきの付きが悪く、析出速度も3μm/時間と半
減した。Comparative Example 1 Basically the same as in Example 1, but the copper ion concentration was 0.003M. In this case, metal ions in the plating solution were deposited and decomposed in the bath in about 5 hours after the bath was set up. Furthermore, when plating was performed immediately after the bath was built up, there was no nodule, but the plating did not adhere well and the deposition rate was halved to 3 μm / hour.
【0050】(比較例2)基本的には実施例1と同様で
あるが、銅イオン濃度を、0.017Mとした。この場
合、めっき浴の反応が生じない、いわゆる未析と呼ばれ
る現象が見られた。Comparative Example 2 Basically the same as in Example 1, but the copper ion concentration was 0.017M. In this case, a phenomenon called so-called non-deposition was observed in which the reaction of the plating bath did not occur.
【0051】(比較例3)基本的には実施例1と同様で
あるが、還元剤濃度を、0.08Mとした。この場合、
未析が見られ、めっき反応が生じた場合でもめっき反応
の停止が観察された。Comparative Example 3 Basically the same as in Example 1, but the reducing agent concentration was 0.08M. in this case,
The non-deposition was observed, and the termination of the plating reaction was observed even when the plating reaction occurred.
【0052】(比較例4)基本的には実施例1と同様で
あるが、還元剤濃度を、0.06Mとした。この場合、
ノジュールが発生し(図2参照)、めっき浴槽やフィル
ターに異常析出が見られた。さらに、クロスカットの光
学顕微鏡観察の結果、一次めっき膜と二めっき膜の界面
に剥離が観察された。Comparative Example 4 Basically the same as in Example 1, but the reducing agent concentration was 0.06M. in this case,
Nodules were generated (see Fig. 2), and abnormal deposition was observed in the plating bath and filter. Further, as a result of cross-cut optical microscope observation, peeling was observed at the interface between the primary plating film and the secondary plating film.
【0053】[0053]
【発明の効果】以上詳述したように、本願発明によれ
ば、めっき析出速度を低下させることなく、浴分解、ノ
ジュールを防止できる。As described in detail above, according to the present invention, bath decomposition and nodules can be prevented without lowering the plating deposition rate.
【図1】本願発明のめっき浴によりめっきされた導体回
路の金属組織を表す光学顕微鏡写真である。FIG. 1 is an optical micrograph showing a metal structure of a conductor circuit plated by a plating bath of the present invention.
【図2】比較例4のめっき浴によりめっきされた導体回
路の金属組織を表す光学顕微鏡写真である。FIG. 2 is an optical micrograph showing a metal structure of a conductor circuit plated by a plating bath of Comparative Example 4.
【図3】一次めっき膜と二次めっき膜との層構造を示す
断面模式図。FIG. 3 is a schematic sectional view showing a layer structure of a primary plating film and a secondary plating film.
【符号の説明】 1 基板 2 無電解めっき用接着剤 3 粗化面 4 一次めっき膜 5 二次めっき膜 6 めっきレジスト[Explanation of symbols] 1 substrate 2 adhesive for electroless plating 3 roughened surface 4 primary plating film 5 secondary plating film 6 plating resist
Claims (10)
元剤、pH調整剤からなる無電解めっき液において、 銅イオンの濃度が0.005〜0.015mol/l、
pH調整剤の濃度が、0.25〜0.35mol/lで
あり、還元剤の濃度が0.01〜0.04mol/lで
あることを特徴とする無電解めっき液。1. An electroless plating solution comprising copper ions, a trialkanolamine, a reducing agent and a pH adjuster, wherein the concentration of copper ions is 0.005 to 0.015 mol / l,
The electroless plating solution, wherein the pH adjusting agent has a concentration of 0.25 to 0.35 mol / l and the reducing agent has a concentration of 0.01 to 0.04 mol / l.
ルアミンの濃度が0.1〜0.8Mである請求項1に記
載の無電解めっき液。2. The electroless plating solution according to claim 1, wherein the concentration of trialkanolamine in the electroless plating solution is 0.1 to 0.8M.
タノールアミン、トリイソパノールアミン、トリメタノ
ールアミン、トリプロパノールアミンから選ばれる少な
くとも1種である請求項1あるいは2に記載の無電解め
っき液。3. The electroless plating solution according to claim 1, wherein the trialkanolamine is at least one selected from triethanolamine, triisopropanolamine, trimethanolamine, and tripropanolamine.
塩、水素化ホウ素塩、ヒドラジンから選ばれる少なくと
も1種である請求項1〜3のいずれか一つに記載の無電
解めっき液。4. The electroless plating solution according to claim 1, wherein the reducing agent is at least one selected from aldehyde, hypophosphite, borohydride and hydrazine.
水酸化カリウム、水酸化カルシウムから選ばれる少なく
とも1種である請求項1〜4のいずれか一つに記載の無
電解めっき液。5. The pH adjusting agent is sodium hydroxide,
The electroless plating solution according to claim 1, which is at least one selected from potassium hydroxide and calcium hydroxide.
び/又はビピリジルを含有してなる請求項1〜5のいず
れか一つに記載の無電解めっき液。6. The electroless plating solution according to claim 1, wherein the electroless plating solution contains an iron compound and / or bipyridyl.
00μm/100μm以下の導体回路を持つプリント配
線板の製造のために使用される請求項1〜6のいずれか
一つに記載の無電解めっき液。7. The electroless plating solution has a line spacing / line width of 1
The electroless plating solution according to any one of claims 1 to 6, which is used for producing a printed wiring board having a conductor circuit of 00 µm / 100 µm or less.
成した後、この基材を無電解めっき液中に浸漬して無電
解めっきを行う方法において、 前記無電解めっき浴は、請求項1〜6のいずれか一つの
無電解めっき液を用いることを特徴とする無電解めっき
方法。8. A method of forming an adhesive layer for electroless plating on a base material and then performing electroless plating by immersing the base material in an electroless plating solution, wherein the electroless plating bath comprises: An electroless plating method comprising using the electroless plating solution according to claim 1.
成した後、この基板を無電解めっき液中に浸漬して無電
解めっきを行うプリント配線板の製造方法において、 前記無電解めっき液は、請求項1〜6のいずれか一つの
無電解めっき液を用いることを特徴とするプリント配線
板の製造方法。9. A method for producing a printed wiring board, comprising: forming an adhesive layer for electroless plating on a substrate; and then immersing the substrate in an electroless plating solution to perform electroless plating, wherein the electroless plating is performed. A method for producing a printed wiring board, characterized in that the electroless plating solution according to any one of claims 1 to 6 is used as the solution.
銅イオン、ニッケルイオン、コバルトイオンから選ばれ
る少なくとも2種以上を金属源とし、還元剤、pH調整
剤を含む無電解めっき液において、 前記無電解めっき液には、鉄化合物および/又はビピリ
ジルを含有してなることを特徴とする無電解めっき液。10. A hydroxycarboxylic acid as a complexing agent,
In an electroless plating solution containing a reducing agent and a pH adjusting agent, using at least two or more kinds selected from copper ions, nickel ions and cobalt ions as a metal source, the electroless plating solution contains an iron compound and / or bipyridyl. An electroless plating solution characterized by being formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29608495A JPH09111464A (en) | 1995-10-18 | 1995-10-18 | Electroless plating liquid, electroless plating method and production of printed circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29608495A JPH09111464A (en) | 1995-10-18 | 1995-10-18 | Electroless plating liquid, electroless plating method and production of printed circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09111464A true JPH09111464A (en) | 1997-04-28 |
Family
ID=17828916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29608495A Pending JPH09111464A (en) | 1995-10-18 | 1995-10-18 | Electroless plating liquid, electroless plating method and production of printed circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09111464A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009114340A (en) * | 2007-11-07 | 2009-05-28 | Konica Minolta Holdings Inc | Inkjet ink for metal pattern formation and method for forming metal pattern |
| WO2019130320A1 (en) * | 2017-12-31 | 2019-07-04 | Stratasys Ltd. | 3d printing of catalytic formulation for selective metal deposition |
-
1995
- 1995-10-18 JP JP29608495A patent/JPH09111464A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009114340A (en) * | 2007-11-07 | 2009-05-28 | Konica Minolta Holdings Inc | Inkjet ink for metal pattern formation and method for forming metal pattern |
| WO2019130320A1 (en) * | 2017-12-31 | 2019-07-04 | Stratasys Ltd. | 3d printing of catalytic formulation for selective metal deposition |
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