JPH09120527A - Metal thin-film magnetic recording medium and method of manufacturing the same - Google Patents
Metal thin-film magnetic recording medium and method of manufacturing the sameInfo
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- JPH09120527A JPH09120527A JP27902795A JP27902795A JPH09120527A JP H09120527 A JPH09120527 A JP H09120527A JP 27902795 A JP27902795 A JP 27902795A JP 27902795 A JP27902795 A JP 27902795A JP H09120527 A JPH09120527 A JP H09120527A
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Abstract
(57)【要約】
【課題】 テキスチャー処理の如く微少な粗さを付すこ
となく、高保磁力化と低ノイズ化を達成する金属薄膜型
磁気記録媒体及びその製造方法を提供する。
【解決手段】 媒体基板2のサブストレート21上に形成
されたNiP層22に低加速電圧のイオンを照射し、非晶
質のNiP層22に内部歪みを生じさせた後、下地層4、
磁性層5及び保護膜6を順次積層する。照射するイオン
として、例えばアルゴンイオン、酸素イオン又は窒素イ
オンを用いる。
(57) Abstract: A metal thin film type magnetic recording medium and a method for manufacturing the same are provided which can achieve a high coercive force and a low noise without imparting a minute roughness like a texture treatment. A NiP layer 22 formed on a substrate 21 of a medium substrate 2 is irradiated with ions of a low acceleration voltage to cause internal strain in the amorphous NiP layer 22, and then a base layer 4,
The magnetic layer 5 and the protective film 6 are sequentially stacked. As the ions to be irradiated, for example, argon ions, oxygen ions or nitrogen ions are used.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、ハードディスク等
の磁気ディスク装置に使用される磁気記録媒体に関し、
より具体的には、磁気特性及び記録再生特性に優れた金
属薄膜型磁気記録媒体とその製造方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording medium used for a magnetic disk device such as a hard disk.
More specifically, the present invention relates to a metal thin film magnetic recording medium having excellent magnetic characteristics and recording / reproducing characteristics and a method for manufacturing the same.
【0002】[0002]
【従来の技術】ハードディスクに用いられる金属薄膜型
磁気記録媒体(1)は、一般に図1に示す如く、Al合
金、ガラス等からなる非磁性のサブストレート(21)上に
非晶質のNiP層(22)が形成された媒体基板(2)に、実
質的にCrからなる下地層(4)、Co合金等からなる磁
性層(5)、カーボン等の保護膜(6)を順に成膜積層して
形成されている。近時、金属薄膜型磁気記録媒体の記録
密度(線記録密度及びトラック密度)の向上に伴ない、磁
気記録媒体は、記録分解能を高める必要があり、磁気特
性の向上(特に、高保磁力)と、記録再生特性の向上(特
に、低ノイズ)が要請されている。磁気記録媒体に構造
的な工夫をこらして保磁力を向上させる手段として、媒
体基板のNiP層にテキスチャーを施すものがある。テ
キスチャーは、ラッピングテープや遊離砥粒により、N
iP層の円周方向にRa50〜100オングストローム
の面粗度の微少な凹凸を形成するものであり、NiP層
にテキスチャーが施されると、内部歪の異方性が発現
し、円周方向の保磁力の向上に有効である。しかし、テ
キスチャーを施すと、テキスチャー処理に伴う異常突起
の形成及び媒体基板の平坦度が悪くなるから、磁気ヘッ
ドと磁気記録媒体との接触を避けるために磁気ヘッドの
浮上量を大きくせねばならず、又、テキスチャー処理に
よるスクラッチ等の形成に伴うビットエラーの増大を伴
い、磁気記録媒体の記録密度の低下を招く。このため最
近では、要求される面粗度は小さくなる傾向にあり、基
板に起因するビットエラー欠陥の減少、低浮上域でのヘ
ッド安定的走行及び媒体基板の平坦度を向上させるため
に、媒体基板にスーパーフィニッシュ加工を施した超平
滑媒体基板の要請もある。2. Description of the Related Art As shown in FIG. 1, a metal thin film magnetic recording medium (1) used for a hard disk generally has an amorphous NiP layer on a non-magnetic substrate (21) made of Al alloy, glass or the like. On the medium substrate (2) on which (22) is formed, an underlayer (4) consisting essentially of Cr, a magnetic layer (5) consisting of a Co alloy or the like, and a protective film (6) such as carbon are sequentially formed and laminated. Is formed. Recently, along with the improvement of the recording density (linear recording density and track density) of the metal thin film magnetic recording medium, it is necessary to increase the recording resolution of the magnetic recording medium, and the magnetic characteristics are improved (especially, high coercive force). There is a demand for improved recording / reproduction characteristics (especially low noise). As a means for improving the coercive force of a magnetic recording medium by taking structural measures, there is a method of applying a texture to the NiP layer of the medium substrate. The texture is N by using wrapping tape and loose abrasive grains.
This is to form minute unevenness with a surface roughness Ra of 50 to 100 angstroms in the circumferential direction of the iP layer, and when the NiP layer is textured, anisotropy of internal strain is developed and Effective for improving coercive force. However, when the texture is applied, the formation of abnormal protrusions and the flatness of the medium substrate are deteriorated due to the texture treatment, and therefore the flying height of the magnetic head must be increased in order to avoid contact between the magnetic head and the magnetic recording medium. Further, the bit density increases due to the formation of scratches and the like due to the texture processing, and the recording density of the magnetic recording medium decreases. For this reason, recently, the required surface roughness tends to be small, and in order to reduce bit error defects caused by the substrate, stable head running in a low flying region, and improvement of the flatness of the medium substrate, There is also a demand for an ultra-smooth medium substrate in which the substrate is superfinished.
【0003】[0003]
【発明が解決しようとする課題】本発明の目的は、スー
パーフィニッシュ加工を施した超平滑媒体基板において
も、磁気記録媒体の高保磁力化と低ノイズ化を達成でき
る金属薄膜型磁気記録媒体及び製造方法を提供すること
である。SUMMARY OF THE INVENTION It is an object of the present invention to produce a metal thin film magnetic recording medium and a magnetic thin film type magnetic recording medium capable of achieving high coercive force and low noise of a magnetic recording medium even in a super smooth medium substrate subjected to superfinishing. Is to provide a method.
【0004】[0004]
【課題を解決するための手段】上記課題を解決するた
め、本発明の金属薄膜型磁気記録媒体の製造方法に於い
ては、非晶質のNiP層(22)が形成された媒体基板(2)
に、低加速電圧でイオンを照射し、NiP層(22)の内部
に歪みを生じさせた後、下地層(4)、磁性層(5)、保護
膜(6)を順次積層する。照射するイオンとして、アルゴ
ンイオン、酸素イオン又は窒素イオンを用いることがで
きる。ここで「低加速電圧」とは、イオンがNiP層(2
2)の中に侵入し得る加速電圧で、かつ非晶質のNiP層
(22)を結晶化させない加速電圧であることを意味し、ア
ルゴンイオン、酸素イオン又は窒素イオンを用いる場
合、約300〜2000Vの範囲が好ましく、イオン電
流は約30〜150mAが望ましい。In order to solve the above problems, in the method of manufacturing a metal thin film magnetic recording medium of the present invention, a medium substrate (2) having an amorphous NiP layer (22) is formed. )
Then, ions are irradiated at a low accelerating voltage to generate strain inside the NiP layer (22), and then an underlayer (4), a magnetic layer (5) and a protective film (6) are sequentially laminated. Argon ions, oxygen ions, or nitrogen ions can be used as the irradiation ions. Here, “low accelerating voltage” means that the ions are in the NiP layer (2
2) An amorphous NiP layer with an accelerating voltage that can penetrate into
This means an accelerating voltage that does not crystallize (22), and when argon ions, oxygen ions or nitrogen ions are used, the range is preferably about 300 to 2000 V, and the ionic current is preferably about 30 to 150 mA.
【0005】本発明の金属薄膜型磁気記録媒体は、非磁
性のサブストレート(21)に非晶質のNiP層(22)が形成
された媒体基板(2)において、NiP層(22)の内部はイ
オン照射によって生じた歪みを有している。The metal thin film type magnetic recording medium of the present invention is a medium substrate (2) in which an amorphous NiP layer (22) is formed on a non-magnetic substrate (21) and inside the NiP layer (22). Has a distortion caused by ion irradiation.
【0006】[0006]
【作用】本発明の金属薄膜型磁気記録媒体の製造方法で
は、媒体基板(2)のNiP層(22)に対して、NiP層(2
2)の中にイオンが侵入し得る加速電圧で、かつ非晶質の
NiP層(22)を結晶化させない加速電圧でイオンを照射
するから、NiP層(22)の非晶質性が損なわれることな
く、NiP層の内部に歪みが発生する。NiP層(22)の
内部に生じた歪みは、NiP層(22)の上に積層される下
地層(4)及び磁性層(5)に内部歪みを発生させ、その結
果磁性層面内方向の磁気異方性が向上し、磁気記録媒体
の保磁力が向上し、ノイズが低減する。According to the method of manufacturing a metal thin film magnetic recording medium of the present invention, the NiP layer (2) is provided to the NiP layer (22) of the medium substrate (2).
Since the ions are irradiated with an accelerating voltage that allows ions to penetrate into 2) and an accelerating voltage that does not crystallize the amorphous NiP layer (22), the amorphous property of the NiP layer (22) is impaired. Without this, strain is generated inside the NiP layer. The strain generated inside the NiP layer (22) causes internal strain in the underlayer (4) and the magnetic layer (5) laminated on the NiP layer (22), and as a result, the magnetic force in the in-plane direction of the magnetic layer is generated. Anisotropy is improved, coercive force of the magnetic recording medium is improved, and noise is reduced.
【0007】[0007]
【発明の実施の形態】本発明の金属薄膜型磁気記録媒体
は、非磁性のサブストレート(21)に形成された非晶質の
NiP層(22)に低加速電圧にて加速されたイオンを照射
し、NiP層(22)の内部に歪みを生じさせることを特徴
としている。BEST MODE FOR CARRYING OUT THE INVENTION The metal thin film type magnetic recording medium of the present invention is characterized in that an amorphous NiP layer (22) formed on a non-magnetic substrate (21) contains ions accelerated by a low acceleration voltage. Irradiation is performed to cause strain inside the NiP layer (22).
【0008】図1は、本発明の金属薄膜型磁気記録媒体
(1)の部分断面図を示している。本発明の記録媒体(1)
は、サブストレート(21)及びNiP層(22)からなる媒体
基板(2)上に、下地層(4)、磁性層(5)及び保護膜(6)
が、この順に積層成膜されている。図1では、NiP層
(22)、下地層(4)、磁性層(5)及び保護膜(6)をサブス
トレート(21)に対して対称に成膜しており、両面で書込
み/読出しを行なえる構成としているが、各層を片面に
のみ成膜して、片面のみで書込み/読出しを行なう構成
とすることもできる。FIG. 1 shows a metal thin film type magnetic recording medium of the present invention.
The partial sectional view of (1) is shown. Recording medium of the present invention (1)
Is an underlayer (4), a magnetic layer (5) and a protective film (6) on a medium substrate (2) consisting of a substrate (21) and a NiP layer (22).
However, the layers are formed in this order. In FIG. 1, the NiP layer
(22), the underlayer (4), the magnetic layer (5) and the protective film (6) are formed symmetrically with respect to the substrate (21) so that writing / reading can be performed on both sides. It is also possible to form each layer only on one side and write / read only on one side.
【0009】媒体基板(2)は、Al/NiP基板又はガ
ラスのサブストレート(21)にスパッタリング法、メッキ
法又は真空蒸着法等により、非晶質のNiP層(22)が形
成されている。次に、NiP層(22)を具えた媒体基板
(2)に、低加速電圧にて加速された窒素イオンを照射す
る。イオンの照射は、熱陰極電子衝撃型イオン銃、RF
励起型イオン銃、又はECR(Electron Cyclotron Reso
nance)イオン銃にて行なうことができる。非晶質のNi
P層(22)に低加速電圧のイオンを照射すると、NiP層
(22)の内部の数オングストローム乃至数十オングストロ
ームの位置までイオンが侵入して、NiP層(22)の内部
に歪みが発生する。この歪みによる内部応力により、N
iP層(22)の表面に歪みが発生する。イオン照射の際の
低加速電圧とは、イオンが少なくともNiP層(22)の表
面から内部に侵入するが、イオン注入時の加熱によりN
iP層(22)が温度上昇して結晶化しない程度の電圧であ
る。使用するイオンがアルゴンイオン、酸素イオン、窒
素イオンの場合、加速電圧は300V〜2000Vの範
囲が望ましい。The medium substrate (2) has an amorphous NiP layer (22) formed on an Al / NiP substrate or a glass substrate (21) by a sputtering method, a plating method, a vacuum deposition method or the like. Next, a medium substrate having a NiP layer (22)
(2) is irradiated with nitrogen ions accelerated at a low acceleration voltage. Ion irradiation is performed by hot cathode electron impact ion gun, RF
Excitation ion gun or ECR (Electron Cyclotron Reso
nance) Ion gun can be used. Amorphous Ni
When the P layer (22) is irradiated with ions of a low acceleration voltage, the NiP layer is
Ions penetrate to a position of several angstroms to several tens of angstroms inside the (22), and strain occurs inside the NiP layer (22). Due to the internal stress due to this strain, N
Strain occurs on the surface of the iP layer (22). The low accelerating voltage at the time of ion irradiation means that the ions penetrate at least from the surface of the NiP layer (22) to the inside, but due to heating at the time of ion implantation, N
The voltage is such that the iP layer (22) does not crystallize due to temperature rise. When the ions used are argon ions, oxygen ions, and nitrogen ions, the acceleration voltage is preferably in the range of 300V to 2000V.
【0010】次に、媒体基板(2)のNiP層(22)の上
に、公知の如く、スパッタリング、メッキ又は真空蒸着
法等により下地層(4)、磁性層(5)及び保護膜(6)を順
に成膜積層して、金属薄膜型磁気記録媒体(1)が作製さ
れる。Next, on the NiP layer (22) of the medium substrate (2), an underlayer (4), a magnetic layer (5) and a protective film (6) are formed by a known method such as sputtering, plating or vacuum deposition. 2) are sequentially deposited and laminated to produce a metal thin film magnetic recording medium (1).
【0011】[0011]
【実施例】実施例1 この実施例では、イオン照射によってNiP層の内部に
歪みが形成されることを明らかにする。媒体基板は、A
l/NiPのサブストレート(3.5inch−31.5mil)
に、表面に超平滑加工処理を行なって、表面粗さ5〜6
オングストローム、平坦度5〜6μmとなるよう加工し
た。熱陰極電子衝撃型イオン銃を用いて、媒体基板のN
iP層に窒素イオンを1000Vの低加速電圧で照射し
た。次に、公知の要領にて、得られた媒体基板を約26
0℃の温度で加熱し、スパッタリング装置により、下地
層(成分は実質的にCr;層厚は約600オングストロ
ーム)を形成し、さらに磁性層(成分は原子%でCr10
%、Ta6%、残部実質的にCo;層厚は400オング
ストローム)を形成した後、保護膜(成分は実質的にC;
膜厚は120オングストローム)を形成し、供試磁気デ
ィスク(a)を得た。なお、下地層と磁性層の成膜時のバ
イアス電圧は約−200Vである。EXAMPLES Example 1 This example demonstrates that ion bombardment creates strain within the NiP layer. The medium substrate is A
l / NiP substrate (3.5inch-31.5mil)
Then, the surface is subjected to ultra-smoothness treatment to give a surface roughness of 5-6.
It was processed to have an angstrom and a flatness of 5 to 6 μm. Using a hot cathode electron impact type ion gun,
The iP layer was irradiated with nitrogen ions at a low acceleration voltage of 1000V. Next, the obtained medium substrate is subjected to about 26 in a known manner.
After heating at a temperature of 0 ° C., an underlayer (component is substantially Cr; layer thickness is about 600 Å) is formed by a sputtering apparatus, and a magnetic layer (component is Cr 10 in atomic% is used).
%, Ta6%, balance substantially Co; layer thickness is 400 Å, and then a protective film (component substantially C;
A film thickness of 120 angstroms) was formed to obtain a test magnetic disk (a). The bias voltage at the time of forming the underlayer and the magnetic layer is about -200V.
【0012】比較のために、NiP層にイオン照射を行
なわない供試磁気ディスク(x)を作製した。なお、磁気
ディスク(x)の作製手順は、イオンを照射しなかった点
を除いて、供試磁気ディスク(a)と同じである。For comparison, a test magnetic disk (x) was prepared in which the NiP layer was not irradiated with ions. The procedure for producing the magnetic disk (x) is the same as that of the magnetic disk under test (a) except that the ions were not irradiated.
【0013】供試磁気ディスク(a)と(x)のX線回折測定
結果を図2に示す。図2を参照すると、ディスク(a)の
Cr(200)ピークとCo(110)ピークは、ディスク(x)に
比べて2θで低角度側にシフトしていることがわかる。
なお、縦軸の強さを示す数値は任意単位(arbitrary uni
t)である。このX線回折測定結果により、ディスク(a)
のCr下地層とCo合金の磁性層が、ディスク(x)に比
べて圧縮歪みを大きく受けていることがわかる。これ
は、NiP層に発生した歪により、下地層と磁性層に残
留歪みが生じたものと推察される。The results of X-ray diffraction measurement of the test magnetic disks (a) and (x) are shown in FIG. Referring to FIG. 2, it can be seen that the Cr (200) peak and the Co (110) peak of the disc (a) are shifted to the lower angle side by 2θ as compared with the disc (x).
In addition, the numerical value showing the strength of the vertical axis is an arbitrary unit (arbitrary uni
t). From this X-ray diffraction measurement result, the disk (a)
It can be seen that the Cr underlayer and the magnetic layer of Co alloy of (1) are subjected to a large amount of compressive strain as compared with the disk (x). It is presumed that this is because the strain generated in the NiP layer caused residual strain in the underlayer and the magnetic layer.
【0014】実施例2 この実施例では、イオン照射によりNiP層の内部に生
じた歪みによって、磁気記録媒体の磁気特性と記録再生
特性が改善されることを明らかにする。実施例1で作製
した供試磁気ディスク(a)と(x)の他に、NiP層に10
00Vで酸素イオンを照射した供試磁気ディスク(b)に
ついて、磁気記録特性と記録再生特性を測定した。測定
結果を表1に示す。表1中、Hcは保磁力、Brdは残
留磁束密度、Sは角形比、TAAは出力、SNmは媒体
ノイズと信号強度との比、Nmは媒体ノイズを示してい
る。 Example 2 In this example, it is clarified that the magnetic characteristics and the recording / reproducing characteristics of the magnetic recording medium are improved by the strain generated inside the NiP layer by the ion irradiation. In addition to the test magnetic disks (a) and (x) manufactured in Example 1, the NiP layer has 10
The magnetic recording characteristics and the recording / reproducing characteristics of the test magnetic disk (b) irradiated with oxygen ions at 00 V were measured. Table 1 shows the measurement results. In Table 1, Hc is a coercive force, Brd is a residual magnetic flux density, S is a squareness ratio, TAA is an output, SNm is a ratio of medium noise to signal strength, and Nm is medium noise.
【0015】[0015]
【表1】 [Table 1]
【0016】表1から明らかなように、本発明の実施例
に係る供試磁気ディスク(a)(b)は従来の磁気記録媒体で
ある供試磁気ディスク(x)に比べて、磁気特性(特に、保
磁力Hc)と記録再生特性(特に、媒体ノイズNm)が両
方共向上していることがわかる。As is apparent from Table 1, the test magnetic disks (a) and (b) according to the embodiments of the present invention have magnetic characteristics (compared with those of the test magnetic disk (x) which is a conventional magnetic recording medium. In particular, it can be seen that both the coercive force Hc) and the recording / reproducing characteristics (particularly the medium noise Nm) are improved.
【0017】実施例3 この実施例では、熱陰極電子衝撃型イオン銃によるイオ
ン加速電圧を変化させて、イオン加速電圧と保磁力の関
係を調べるものである。NiP層に300Vと1000
Vの加速電圧で窒素イオンを照射した2つの媒体基板、
及びイオン照射しない媒体基板に、夫々、Cr下地層及
びCo84Cr10Ta6の磁性層を形成し、供試磁気ディ
スク(c)(c)(c)を作製した。NiP層に300Vと10
00Vの加速電圧で酸素イオンを照射した2つの媒体基
板、及びイオン照射しない媒体基板に、夫々、Cr下地
層及びCo84Cr10Ta6の磁性層を形成し、供試磁気デ
ィスク(d)(d)(d)を作製した。NiP層に300Vと1
000Vの加速電圧で窒素イオンを照射した2つの媒体
基板、及びイオン照射しない媒体基板に、夫々、Cr下
地層及びCo77Cr13Ta6Pt4の磁性層を形成し、供
試磁気ディスク(e)(e)(e)を作製した。NiP層に30
0Vと1000Vの加速電圧で酸素イオンを照射した2
つの媒体基板、及びイオン照射しない媒体基板に、夫
々、Cr下地層及びCo77Cr13Ta6Pt4の磁性層を
形成し、供試磁気ディスク(f)(f)(f)を作製した。 Embodiment 3 In this embodiment, the relationship between the ion accelerating voltage and the coercive force is examined by changing the ion accelerating voltage by the hot cathode electron impact type ion gun. 300V and 1000 on NiP layer
Two medium substrates irradiated with nitrogen ions at an accelerating voltage of V,
Further, a Cr underlayer and a magnetic layer of Co 84 Cr 10 Ta 6 were respectively formed on the medium substrate which was not irradiated with ions, and the test magnetic disks (c), (c) and (c) were produced. 300V and 10 for NiP layer
A magnetic underlayer and a magnetic layer of Co 84 Cr 10 Ta 6 were formed on two medium substrates irradiated with oxygen ions at an accelerating voltage of 00 V and a medium substrate not irradiated with ions, respectively, and the magnetic disk under test (d) ( d) (d) was prepared. 300V and 1 for NiP layer
A magnetic underlayer and a magnetic layer of Co 77 Cr 13 Ta 6 Pt 4 were formed on two medium substrates irradiated with nitrogen ions at an acceleration voltage of 000 V and a medium substrate not irradiated with ions, respectively. ) (e) (e) was produced. 30 for NiP layer
Irradiated with oxygen ions at 0 V and 1000 V accelerating voltage 2
A magnetic underlayer and a magnetic layer of Co 77 Cr 13 Ta 6 Pt 4 were respectively formed on one medium substrate and a medium substrate which was not irradiated with ions, to fabricate test magnetic disks (f) (f) (f).
【0018】供試磁気ディスク(c)(d)の保磁力測定結果
を図3に、供試磁気ディスク(e)(f)の保磁力測定結果を
図4に示す。図3及び図4の結果を参照すると、保磁力
は、酸素イオンを照射した磁気ディスクの方が窒素イオ
ンを照射した磁気ディスクよりも若干すぐれており、酸
素イオンを照射する方がより望ましいことがわかる。ま
た、イオン加速電圧が300Vのときに、イオン照射し
ない場合に比べて約10%、イオン加速電圧が1000
Vのときに、イオン照射しない場合に比べて約20%の
保磁力の向上が認められる。FIG. 3 shows the coercive force measurement results of the test magnetic disks (c) and (d), and FIG. 4 shows the coercive force measurement results of the test magnetic disks (e) and (f). Referring to the results of FIGS. 3 and 4, the coercive force of the magnetic disk irradiated with oxygen ions is slightly better than that of the magnetic disk irradiated with nitrogen ions, and it is more desirable to apply oxygen ions. Recognize. Also, when the ion acceleration voltage is 300 V, the ion acceleration voltage is about 10%, and the ion acceleration voltage is 1000% as compared with the case where the ion irradiation is not performed.
At V, an improvement in coercive force of about 20% is recognized as compared with the case where no ion irradiation is performed.
【0019】なお、イオン加速電圧が高くなりすぎる
と、NiPの非晶質層が結晶化する虞れがあるので、あ
まりに高くすべきではない。また、NiP層に照射する
イオンは、前記した酸素イオンと窒素イオンに限定され
るものでなく、酸素イオンよりも小さいイオン、例えば
水素イオン等も用いることができる。If the ion acceleration voltage becomes too high, the NiP amorphous layer may be crystallized, so it should not be too high. The ions for irradiating the NiP layer are not limited to the oxygen ions and the nitrogen ions described above, and ions smaller than the oxygen ions, such as hydrogen ions, can be used.
【0020】[0020]
【発明の効果】本発明の金属薄膜型磁気記録媒体は、上
記の如く、従来の磁気記録媒体に比べて保磁力が高く、
ノイズが小さい。しかも、テキスチャー処理のように微
少な粗さを付していないから、媒体基板にスーパーフィ
ニッシュ加工を施して、微小突起がなく、平坦度をより
一層向上させることにより、磁気ヘッド浮上量を可及的
に小さくすることができ、従来の磁気記録媒体を凌ぐ高
密度記録が可能となる。As described above, the metal thin film type magnetic recording medium of the present invention has a higher coercive force than the conventional magnetic recording medium.
The noise is small. Moreover, since it does not have a minute roughness like the texture treatment, the medium substrate is super-finished so that there are no minute protrusions and the flatness is further improved, thus increasing the flying height of the magnetic head. The magnetic recording medium can be made smaller, and high-density recording superior to that of the conventional magnetic recording medium can be realized.
【図1】金属薄膜型磁気記録媒体の部分断面図である。FIG. 1 is a partial cross-sectional view of a metal thin-film magnetic recording medium.
【図2】磁気記録媒体のX線回析結果を示すグラフであ
る。FIG. 2 is a graph showing an X-ray diffraction result of a magnetic recording medium.
【図3】照射するイオンの種類及び加速電圧と、保磁力
との関係を示すグラフである。FIG. 3 is a graph showing the relationship between the coercive force and the type and acceleration voltage of ions to be irradiated.
【図4】照射するイオンの種類及び加速電圧と、保磁力
との関係を示すグラフである。FIG. 4 is a graph showing the relationship between coercive force and the type and acceleration voltage of ions to be irradiated.
(1) 金属薄膜型磁気記録媒体 (2) 媒体基板 (21) サブストレート (22) NiP層 (4) 下地層 (5) 磁性層 (6) 保護膜 (1) Metal thin film magnetic recording medium (2) Media substrate (21) Substrate (22) NiP layer (4) Underlayer (5) Magnetic layer (6) Protective film
Claims (3)
NiP層(22)が形成された媒体基板(2)に、下地層
(4)、磁性層(5)及び保護膜(6)を順次積層する金属薄
膜型磁気記録媒体の製造方法において、媒体基板(2)に
低加速電圧にてイオンを照射し、非晶質のNiP層(22)
の内部に歪みを生じさせた後、下地層(4)、磁性層(5)
及び保護膜(6)を順次積層することを特徴とする金属薄
膜型磁気記録媒体の製造方法。1. An underlayer on a medium substrate (2) having an amorphous NiP layer (22) formed on a non-magnetic substrate (21).
In a method of manufacturing a metal thin film magnetic recording medium in which (4), a magnetic layer (5) and a protective film (6) are sequentially laminated, a medium substrate (2) is irradiated with ions at a low acceleration voltage to make it amorphous. NiP layer (22)
After strain is generated inside the magnetic layer, the underlayer (4) and magnetic layer (5)
A method of manufacturing a metal thin film type magnetic recording medium, characterized in that a protective film (6) and a protective film (6) are sequentially laminated.
素イオン又は窒素イオンである請求項1に記載の製造方
法。2. The manufacturing method according to claim 1, wherein the ions to be irradiated are argon ions, oxygen ions or nitrogen ions.
のNiP層(22)が形成された媒体基板(2)に、下地層
(4)、磁性層(5)及び保護膜(6)を順次積層してなる金
属薄膜型磁気記録媒体において、媒体基板(2)のNiP
層(22)は内部にイオン照射によって生じた歪みを有する
ことを特徴とする金属薄膜型磁気記録媒体。3. An underlayer on a medium substrate (2) having an amorphous NiP layer (22) formed on a non-magnetic substrate (21).
(4), a magnetic layer (5), and a protective film (6) are sequentially laminated in a metal thin film type magnetic recording medium, the NiP of the medium substrate (2)
The layer (22) is a metal thin film type magnetic recording medium characterized in that it has a strain generated by ion irradiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27902795A JP3851673B2 (en) | 1995-10-26 | 1995-10-26 | Metal thin film type magnetic recording medium and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27902795A JP3851673B2 (en) | 1995-10-26 | 1995-10-26 | Metal thin film type magnetic recording medium and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09120527A true JPH09120527A (en) | 1997-05-06 |
| JP3851673B2 JP3851673B2 (en) | 2006-11-29 |
Family
ID=17605381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27902795A Expired - Fee Related JP3851673B2 (en) | 1995-10-26 | 1995-10-26 | Metal thin film type magnetic recording medium and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3851673B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7989097B2 (en) | 2005-07-26 | 2011-08-02 | Kabushiki Kaisha Toshiba | Perpendicular magnetic recording medium with tilted easy axis of magnetization, method of manufacturing magnetic recording medium, and magnetic recording apparatus comprising magnetic recording medium |
-
1995
- 1995-10-26 JP JP27902795A patent/JP3851673B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7989097B2 (en) | 2005-07-26 | 2011-08-02 | Kabushiki Kaisha Toshiba | Perpendicular magnetic recording medium with tilted easy axis of magnetization, method of manufacturing magnetic recording medium, and magnetic recording apparatus comprising magnetic recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3851673B2 (en) | 2006-11-29 |
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