JPH09150357A - Method and apparatus for polishing chamfered surface of semiconductor wafer - Google Patents

Abstract

(57) 【Abstract】 PROBLEM TO BE SOLVED: When a polishing drum is rotated about an axis parallel to the rotation axis of a semiconductor wafer, streaks due to polishing are left on the chamfered surface of the semiconductor wafer in the circumferential direction, and the chamfered surface may not be formed smoothly. was there. A semiconductor wafer (W) is rotated in the circumferential direction, and a polishing liquid is supplied to the chamfered surface of the semiconductor wafer (W), and a polishing cloth (23a) disposed in contact with the chamfered surface of the semiconductor wafer (W) is attached to the semiconductor wafer (W). Rotation direction of
Alternatively, the chamfered surface of the semiconductor wafer W is polished by sliding in a direction different from any of the opposite directions.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chamfered surface polishing method and apparatus for a semiconductor wafer.

[0002]

2. Description of the Related Art As a technique for etching (etching) a chamfered surface (periphery) of a semiconductor wafer such as a silicon wafer, a CCR (Chemical Corner Ro) is used.
However, when this CCR process is performed, protrusions are formed at the boundary between the chamfered surface and the front and back surfaces of the semiconductor wafer. This protrusion is very small,
When a semiconductor wafer is housed in a resin cassette, it comes into contact with the cassette and scrapes the cassette, resulting in minute shavings. It goes without saying that the shavings cause the performance of the semiconductor wafer to deteriorate.

Therefore, apart from the CCR processing, the chamfered surface of the semiconductor wafer is subjected to CMP (Chemical Mecha).
It is known to perform a process such as a mechanical polishing process. This CMP processing is a technique of polishing with a polishing cloth while supplying a polishing liquid to a chamfered surface of a semiconductor wafer. Conventionally, as an apparatus for performing this CMP processing, a polishing drum around which a polishing cloth is wound is used. Is rotatably supported about an axis parallel to the rotation axis of the semiconductor wafer, and the polishing drum is rotated and pressed against the chamfered surface of the semiconductor wafer for polishing.

[0004]

However, the above C
Even if the MP processing device is used, when the polishing drum is rotated about an axis parallel to the rotation axis of the semiconductor wafer, streaks due to polishing are left on the chamfered surface of the semiconductor wafer in the circumferential direction, and the chamfered surface may not be formed smoothly. there were.

The present invention has been made in view of the above circumstances, and an object of the present invention is to form a chamfered surface smoothly to improve the processing accuracy of a semiconductor wafer and prevent the yield at the time of manufacturing and the deterioration of the characteristics of the semiconductor wafer. I am trying.

[0006]

A method for polishing a chamfered surface of a semiconductor wafer according to claim 1, wherein the semiconductor wafer is rotated in a circumferential direction thereof, and a polishing liquid is supplied to the chamfered surface of the semiconductor wafer. The chamfered surface of the semiconductor wafer is polished by sliding a polishing cloth placed in contact with the chamfered surface of the wafer in a direction different from the circumferential direction of the semiconductor wafer.

In the chamfered surface polishing method for a semiconductor wafer according to the first aspect, the polishing cloth and the semiconductor are slid by sliding the polishing cloth in a direction different from either the rotation direction of the semiconductor wafer or the opposite direction. At the contact point with the chamfered surface of the wafer, the moving direction of the polishing cloth does not match the moving direction of the chamfered surface of the semiconductor wafer, and the chamfered surface does not match the opposite direction, and the chamfered surface is polished.

A chamfered surface polishing apparatus for a semiconductor wafer according to a second aspect of the present invention includes a rotating mechanism for holding the semiconductor wafer and supporting the semiconductor wafer rotatably in the circumferential direction thereof.
A polishing cloth movably supported in a direction different from the circumferential direction of the semiconductor wafer held by the rotating mechanism, a polishing cloth drive mechanism for moving the polishing cloth, and a semiconductor wafer held by the rotating mechanism. And a polishing cloth displacing mechanism for bringing the polishing cloth and the chamfered surface of the semiconductor wafer into contact with each other by relatively separating and approaching the polishing cloth.

In a chamfered surface polishing apparatus for a semiconductor wafer according to a second aspect of the present invention, the polishing cloth is brought into contact with the chamfered surface of the semiconductor wafer while running in a direction different from the circumferential direction of the semiconductor wafer. At the contact point with the chamfered surface of the semiconductor wafer, the traveling direction of the polishing cloth does not coincide with the moving direction of the chamfered surface of the semiconductor wafer, and the chamfered surface does not coincide with the opposite direction.

According to another aspect of the present invention, there is provided a chamfered surface polishing apparatus for a semiconductor wafer, wherein the polishing cloth drive mechanism is supported by a polishing drum rotatably supported about an axis parallel to the front and back surfaces of the semiconductor wafer. A drive source for rotating the drum, and the polishing cloth is attached to an outer peripheral surface of the polishing drum.

In the chamfered surface polishing apparatus for semiconductor wafers according to the present invention, when the polishing drum is brought into contact with the semiconductor wafer, the direction in which the polishing drum rotates and the direction in which the chamfered surface of the semiconductor wafer moves are orthogonal to each other. Polishing is performed in this state.

According to a fourth aspect of the present invention, there is provided a chamfered surface polishing apparatus for a semiconductor wafer, wherein the polishing cloth drive mechanism is provided with a backing plate arranged in parallel to the chamfered surface of the semiconductor wafer, and the corresponding plate along the plate. A polishing cloth support part for supporting the polishing cloth and allowing the polishing cloth to slide along the chamfered surface of the semiconductor wafer; and a drive source attached to the polishing cloth support part for operating the polishing cloth. Characterize.

In the chamfered surface polishing apparatus for semiconductor wafers according to the present invention, when the polishing cloth is brought into sliding contact with the semiconductor wafer, the polishing is carried out under the condition that the pressing force on the chamfered surface of the polishing cloth acts uniformly. .

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment showing a chamfered surface polishing method and apparatus for a semiconductor wafer according to the present invention will be described with reference to FIGS. A chamfered surface polishing apparatus 1 for a semiconductor wafer shown in FIGS. 1 and 2 includes a rotation support mechanism (rotation mechanism) 10, a polishing mechanism 20, an orientation flat alignment section 30, a final centering mechanism (center alignment mechanism) 40, and a polished surface. The base 2 is provided with a wafer transfer mechanism 50, a cleaning unit 60, and a drying unit 70.

The rotation support mechanism 10 is provided with a pair of support portions 11 which are arranged on the same plane and are spaced apart from each other, and which support the semiconductor wafer W by sandwiching it from both front and back surfaces.

The support portion 11 is arranged opposite to the bearing portions 13 and 14 which are vertically spaced apart from each other, and a pair of support rods 15 for sandwiching and supporting the semiconductor wafer W one by one between the respective tips. 16 is provided.

The support rods 15 and 16 are the upper and lower bearings 1.
The motors 15a and 16a respectively disposed on the motors 3 and 14 can rotate the semiconductor wafer W, which is sandwiched between them, in the circumferential direction.

The lower bearing portion 14 is located between the support portions 11 and is vertically movable and rotatable about a vertical shaft 12 located equidistant from both support portions 11, and the bearing portion 14 is located above. The semiconductor wafer W is clamped between the support rods 15 and 16 by moving the support wafers 15 and 16. Moreover, the support rod 16 is provided with a vacuum suction mechanism 16b for sucking the semiconductor.

The bearing portion 14 is supported from below by an elevating block 17 penetrating the vertical shaft 12, and is vertically moved as the elevating block 17 is moved up and down.
Both ends of the elevating block 17 are respectively fitted and inserted into guide rails 17a attached to the base 2 in the vertical direction, and the elevating block 17 can be moved up and down along the guide rails 17a. The lifting block 17 is lifted and lowered by a lead screw (not shown) arranged in parallel with the guide rail 17a.

Further, the bearing portion 14 includes a pulley 18 attached to the base end side of the vertical shaft 12 and a reversing motor 19 attached to the base 2 in relation to the pulley 18 for every 180 ° around the vertical shaft 12. It is possible to rotate. A pulley 19a is also attached to the reversing motor 19, and the endless belt 1 is provided between the pulleys 18 and 19a.
9b is wound and the driving force of the reversing motor 19 is transmitted.

The polishing mechanism 20 includes a plurality of (four in the present embodiment) polishing drum rotating mechanisms (polishing cloth driving mechanisms) for polishing the chamfered surfaces of the two semiconductor wafers W supported by the rotation supporting mechanism 10. 21, a polishing drum moving mechanism (polishing cloth displacement mechanism) 22 for moving the polishing drum to contact the semiconductor wafer W, and a polishing liquid supply mechanism 29 for supplying the polishing liquid toward the polishing surface of the semiconductor wafer W. ing.

As shown in FIG. 3, the polishing drum rotating mechanism 21 is rotatably supported about an axis parallel to the front and back surfaces of the semiconductor wafer W and has a polishing cloth 23a attached to its side surface. 23 and the polishing drum 2
And a drive motor unit (driving source) 24 for supporting and rotating the device 3.

The drive motor portion 24 is fixed to the main body block 25, and the polishing drum 2 is centered on an axial fulcrum O parallel to the axis of the polishing drum 23 provided in the main body block 25.
It is possible to move up and down while keeping the rotation axes of 3 parallel. Further, as the polishing drum moving mechanism 22 for moving the polishing drum 23, drive cylinders 26 and 27 are arranged above the main body block 25, respectively.

Piston rod 26a of drive cylinder 26
A pressing body 26b that presses the main body block 25 on the side to which the drive motor unit 24 is attached is attached to the tip,
A stopper 26c that restricts the downward movement of the drive motor portion 24 is arranged on the side facing the pressing body 26b with the main body block 25 interposed therebetween.

A weight G is attached to the main body block 25 on the opposite side of the drive motor portion 24 with the shaft fulcrum O interposed therebetween, and the body on the side where the weight G is attached is attached to the tip of the piston rod 27a of the drive cylinder 27. A pressing body 27b for pressing the block 25 is attached, and the main body block 25
A stopper 27c is arranged on the side opposite to the pressing body 27b with the weight G interposed therebetween to limit the downward movement of the weight G.

The drive motor section 24 is usually separated from the semiconductor wafer W by the weight of the weight G, and the main body block 2
5 is in contact with the stopper 27c. When polishing is performed, the drive cylinder 26 is driven to push down the main body block 25 on the drive motor section 24 side, and the polishing drum 23 is pressed against the semiconductor wafer W to perform polishing. At this time, the main body block 25 is in contact with the stopper 26c. When the polishing is completed, the drive cylinder 27 is driven to separate the main body block 25 on the weight G side from the polishing drum from the semiconductor wafer W.

The polishing drum rotating mechanism 21 is fixed on a first slide table 28a and a second slide table 28b which are composed of two layers. First slide table 2
8a is arranged on a guide rail 28c attached to the base 2, and the polishing drum rotating mechanism 21 is attached to the polishing drum 23.
It is supported so that it can move horizontally in a direction parallel to the rotation axis.
Further, the second slide table 28b is arranged on a screw rod 28d mounted on the first slide table 28a in a direction orthogonal to the guide rail 28c, and the screw rod 28d is rotated by a driving means (not shown). By doing so, the polishing drum rotating mechanism 21 is supported so as to be horizontally movable in the radial direction of the semiconductor wafer W.

The first slide table 28a is operated during polishing of the semiconductor wafer W, and the polishing drum rotating mechanism 2 is operated.
1 is horizontally moved in the rotation axis direction of the polishing drum 23 so that the entire outer peripheral surface of the polishing drum 23 is polished. The second slide table 28b is
It is preliminarily operated in the preceding stage of the polishing process and changes the polishing position according to the size of the semiconductor wafer W to be polished.

Two polishing drum rotating mechanisms 21 correspond to one semiconductor wafer W, both of which are arranged parallel to each other with the center of the semiconductor wafer W interposed therebetween, and the front surface or the back surface of the semiconductor wafer W is polished. It is like this.

The polishing liquid supply mechanism 29 employs a known technique for supplying the polishing liquid while keeping a constant outflow amount.

The orientation flat alignment section 30 is provided in the transfer path for transferring the semiconductor wafer W to the rotation support mechanism 10, and the semiconductor wafer W in the middle of transfer.
The orientation flats of are aligned with the designated positions.

The final centering mechanism 40 is provided at the subsequent stage of the orientation flat alignment section 30 and conveys the semiconductor wafer W whose orientation flat is aligned to between the support rods 15 and 16 to rotate the support rods 15 and 16. The center of the semiconductor wafer W is made to coincide with the axis.

The polished wafer delivery mechanism 50 is provided in a transport path for transporting the polished semiconductor wafer W, and supports the polished semiconductor wafer W on the support rods 15 and 1.
I receive it from 6 and hand it over to the next process.

The cleaning unit 60 is provided at the subsequent stage of the polished wafer transfer mechanism 50, and receives the polished semiconductor wafer W and cleans it with clear water.

The drying section 70 is provided after the cleaning section 60 and is adapted to dry the cleaned semiconductor wafer W.

Next, a process of polishing the chamfered surface of the semiconductor wafer by using the chamfered surface polishing apparatus 1 for the semiconductor wafer will be described.

1. [Orientation Flat Alignment Step] The orientation flat alignment unit 30 aligns the orientation flat of the _first semiconductor wafer W ₁ transported to the rotation support mechanism 10 to a predetermined position.

2. [Centering Step] The semiconductor wafer W ₁ whose orientation flat is aligned is placed in the final centering mechanism 40.
Is carried to between the support rods 15 and 16 to align the center of the semiconductor wafer W ₁ with the rotation axis of the support rods 15 and 16.

3-1. [Polishing Process (Surface Polishing)] The bearing portion 14 is moved upward, the semiconductor wafer W is lifted by the support rod 16, and the support rod 1 is used as it is.
It is clamped between 5 and 16. At this time, the vacuum suction mechanism 16
b actuates the adsorb the semiconductor wafer W ₁ to the support rod 16, the semiconductor wafer W ₁ is prevented from falling from the upper support rod 16.

Subsequently, as shown in FIG. 4, the support rod 1
5 and 16 are rotated to rotate the semiconductor wafer W ₁ in the circumferential direction thereof, and the polishing drum 23 is rotated to approach the front surface of the semiconductor wafer W ₁ .
The chamfered surface is polished while supplying a polishing liquid. At this time, the polishing drum rotating mechanism 21 is horizontally moved in the rotation axis direction of the polishing drum 23 so that the entire side surface of the polishing drum 23 is polished. The support rod 1 is used when polishing the orientation flat.
The rotation of Nos. 5 and 16 is temporarily stopped, the polishing drum 23 and the orientation flat are made to correspond to each other, and only the polishing drum rotating mechanism 21 is moved in the rotation axis direction of the polishing drum 23 to perform polishing.

3-2. [Polishing Step (Inversion of Front and Back Surfaces)] After polishing the front surface of the semiconductor wafer W ₁ , the bearing portion 14 is moved downward and then rotated by 180 ° about the vertical axis 12, and the semiconductor wafer is not placed. After the support rod 16 is positioned on the final centering mechanism 40 side, the second semiconductor wafer W ₂ is supported by the support rod 15 in the same manner as the _first semiconductor wafer W ₁ .
Hold it between 16. By the way, this semiconductor wafer W ₂ is 1. [Orientation flat alignment step] 2. It is assumed that the operation of [centering step] has already been performed.

3-3. [Polishing Step (Backside Polishing)] The supporting rods 15 and 16 are rotated to rotate the semiconductor wafers W ₁ and W ₂ in the circumferential direction, and the polishing drum 23 is rotated to rotate the surface of the semiconductor wafer W ₂ (see The chamfered surface is polished while the polishing surface is approached and the polishing liquid is supplied. At the same time, the polishing drum 23 is rotated to approach the back surface of the semiconductor wafer W ₁ , and the chamfered surface is polished while the polishing liquid is supplied. Orientation flat polishing and polishing drum rotation mechanism 21 movement 3-
1. The same procedure as the [polishing step (surface polishing)] is performed.

4. [Washing and drying step] A semiconductor wafer W ₂ of the surface, when the polishing of the back surface of the semiconductor wafer W ₁ is completed, moving the bearing portion 14 downward. The semiconductor wafer W ₁ whose both front and back surfaces have been polished is received by the polished wafer transfer mechanism 50 and transferred to the cleaning unit 60 in the process of the bearing unit 14 moving downward, and is then cleaned in the drying unit 70. It is dried and then transferred to the refraining processing step.

After the semiconductor wafer W is transferred to the polished wafer transfer mechanism 50, the bearing portion 14 is rotated by 180 ° about the vertical axis 12, and the support rod 16 on which the semiconductor wafer W ₁ has been picked up is transferred to the final centering mechanism 40. After being positioned on the side, the third semiconductor wafer W ₃ is held between the support rods 15 and 16 like the _second semiconductor wafer W ₂ described above.

Below, 1. [Orientation flat alignment process] 2
[Center alignment step], 3-1 to 3 [polishing step], 4. The [cleaning / drying step] is repeated to polish the chamfered surfaces of the semiconductor wafers that are sequentially transported.

As described above, when the chamfered surface polishing apparatus 1 for a semiconductor wafer is used to polish the chamfered surface of the semiconductor wafer, the semiconductor wafers W sequentially transported in a series of transportation paths are polished, washed and dried. Therefore, the chamfered surface of the semiconductor wafer W can be efficiently polished. In particular, the rotation support mechanism 10 allows the semiconductor wafer W
It is possible to simultaneously polish the front surface of one semiconductor wafer and the back surface of the other semiconductor wafer simultaneously, thus improving the efficiency of the polishing process.

Further, by controlling the rotation position of the semiconductor wafer W by the rotation support mechanism 10 and the movement of the polishing drum rotation mechanism 21, the orientation flat can be polished with high accuracy.

At the contact point between the polishing drum 23 and the chamfered surface of the semiconductor wafer W, since the polishing is performed in a state where the moving direction of the polishing cloth 23a and the moving direction of the chamfered surface of the semiconductor wafer W are orthogonal to each other, the chamfering is performed. Since the surface is formed smoothly, it is possible to prevent the generation of streaks in the circumferential direction due to polishing. Further, since the soft polishing cloth 23a is pressed against the semiconductor wafer W, the polishing cloth 23a wraps around the front and back surfaces and the outer peripheral side surface of the semiconductor wafer W, and the boundary between the front surface and the chamfered surface of the semiconductor wafer W or the boundary between the double-sided surfaces. It is possible to remove the edge formed at the corner located at the chamfer and to polish the outer peripheral side surface.
As a result, it is possible to improve the processing accuracy of the semiconductor wafer and prevent the yield at the time of manufacturing and the deterioration of the characteristics of the semiconductor wafer.

In the present embodiment, the polishing of the semiconductor wafer W having an orientation flat has been described, but the semiconductor wafer chamfering polishing apparatus 1 of the present invention is used to polish a semiconductor wafer having a V-shaped notch. Can be performed sufficiently and with high accuracy. This is because the cloth for the polishing cloth enters the V-shaped notch at the contact point between the polishing drum 23 and the chamfered surface of the semiconductor wafer, so that the notch surface, which has been impossible in the past, can be polished.

Next, a second embodiment showing a chamfered surface polishing apparatus for a semiconductor wafer according to the present invention will be described with reference to FIG. The chamfered surface polishing apparatus 100 for a semiconductor wafer shown in FIG. 5 has an endless polishing belt (polishing cloth) 121 as a polishing mechanism 120, and this polishing belt 12
1 includes a polishing belt drive mechanism (polishing cloth drive mechanism) 122 that rotatably supports and drives 1 in a direction different from either the rotation direction of the semiconductor wafer W or the opposite direction.

The polishing belt drive mechanism 122 includes the backing plate 12 arranged parallel to the chamfered surface of the semiconductor wafer W.
3 and the polishing belt 121 along the pad plate 123
It is provided with a polishing cloth support portion 125 composed of a support roller 124 which supports between points, and a drive source 126 which is attached to the support roller 124 and rotates the polishing belt 121. Other configurations are the same as those of the chamfered surface polishing apparatus 1 for a semiconductor wafer described in the first embodiment.

When the chamfered surface of a semiconductor wafer is polished by using the chamfered surface polishing apparatus 100 for semiconductor wafers described above, when the polishing belt 121 is brought into sliding contact with the semiconductor wafer W, the pressing force of the polishing belt 121 against the chamfered surface is increased. Uniformly acts on the chamfered surface to prevent uneven polishing in the width direction of the chamfered surface and prevent generation of streaks in the circumferential direction due to polishing, and moreover, the chamfered surface can be polished more smoothly. Therefore, even when the polishing cloth is pressed from the chamfered surface on the front surface side to the chamfered surface on the back surface side of the semiconductor wafer W and the polishing cloth is slid along the chamfered surface, the surface of the semiconductor wafer W The corners located at the boundary between the chamfered surface and the chamfered surface or at the boundary between the chamfered surfaces are not excessively polished.

[0053]

According to the chamfered surface polishing method of the first aspect of the present invention, the polishing cloth is slid in a direction different from either the rotational direction of the semiconductor wafer or the opposite direction. At the contact point between the cloth and the chamfered surface of the semiconductor wafer, the direction in which the polishing cloth moves does not match the direction in which the chamfered surface of the semiconductor wafer moves, and the chamfered surface is polished even if the directions do not match. Therefore, the chamfered surface is formed smoothly and it is possible to prevent the generation of streaks in the circumferential direction due to polishing.As a result, the processing accuracy of the semiconductor wafer is improved and the yield at the time of manufacturing and the deterioration of the characteristics of the semiconductor wafer are suppressed. You can

According to the chamfered surface polishing apparatus for semiconductor wafers of the second aspect, the semiconductor wafer is held by the rotating means and rotated in the circumferential direction, and the polishing cloth is rotated by the polishing cloth drive mechanism. direction,
Or by sliding in a direction different from either of the opposite directions, the direction in which the polishing cloth moves at the contact point between the polishing cloth and the chamfered surface of the semiconductor wafer matches the direction in which the chamfered surface of the semiconductor wafer moves. Since the chamfered surface is not polished and does not match the opposite directions, the chamfered surface is formed smoothly, and it is possible to prevent the generation of streaks in the circumferential direction due to the polishing.

According to the chamfered surface polishing apparatus for a semiconductor wafer of the third aspect, when the polishing drum is brought into sliding contact with the semiconductor wafer, the direction in which the polishing cloth moves and the direction in which the chamfered surface of the semiconductor wafer moves. Since the polishing is performed in a state of being orthogonal to each other, it is possible to prevent the generation of streaks in the circumferential direction due to the polishing and to smoothly polish the chamfered surface.

According to the chamfered surface polishing apparatus of the fourth aspect of the present invention, when the polishing cloth is brought into sliding contact with the semiconductor wafer, the polishing is carried out in a state where the pressing force of the polishing cloth against the chamfered surface acts uniformly. Therefore, it is possible to eliminate unevenness in the widthwise polishing of the chamfered surface and prevent the generation of streaks in the circumferential direction due to the polishing, as well as the chamfered surface can be polished more smoothly.

[Brief description of the drawings]

FIG. 1 is a side view showing a first embodiment of a chamfered surface polishing apparatus for a semiconductor wafer according to the present invention.

FIG. 2 is a plan view showing a chamfered surface polishing apparatus for the semiconductor wafer shown in FIG.

3 is a side view showing a polishing drum rotating mechanism provided in the chamfered surface polishing apparatus for semiconductor wafers shown in FIGS. 1 and 2. FIG.

FIG. 4 is a perspective view showing a contact state between a polishing drum rotation mechanism and a semiconductor wafer.

FIG. 5 is a side view of essential parts showing a second embodiment of the chamfered surface polishing apparatus for a semiconductor wafer according to the present invention.

[Explanation of symbols]

 W semiconductor wafer 1 chamfered surface polishing device for semiconductor wafer 10 rotation support mechanism (rotation mechanism) 20 polishing mechanism 21 polishing drum rotation mechanism (polishing cloth drive mechanism) 22 polishing drum moving mechanism (polishing cloth displacement mechanism) 23 polishing drum 23a polishing cloth 24 Drive Motor Unit (Drive Source) 100 Semiconductor Wafer Chamfering Polishing Device 120 Polishing Mechanism 121 Polishing Belt (Polishing Cloth) 122 Polishing Belt Driving Mechanism (Polishing Cloth Driving Mechanism) 123 Abutting Plate 125 Polishing Cloth Supporting Section 126 Driving Source

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Kenji Munemi Kenji Sonami 1 985 Inono, Ikino-cho, Ikuno-cho, Asago-gun, Hyogo Prefecture Ikuno Works, Mitsubishi Materials Corporation (72) Koji Tsuruta Chiyoda-ku, Tokyo 1-5-1, Otemachi Sanritsu Material Silicon Co., Ltd. (72) Inventor Shigeo Kumabe 1-5-1, Otemachi, Chiyoda-ku, Tokyo Sanritsu Material Silicon Co., Ltd.

Claims (4)

[Claims] 1. A method for polishing a chamfered surface of a semiconductor wafer for polishing a chamfered surface of a semiconductor wafer, which comprises rotating a semiconductor wafer in its circumferential direction and supplying a polishing liquid to the chamfered surface of the semiconductor wafer. A method for polishing a chamfered surface of a semiconductor wafer, comprising polishing a chamfered surface of a semiconductor wafer by sliding a polishing cloth arranged in contact with the chamfered surface of the wafer in a direction different from the circumferential direction of the semiconductor wafer. 2. A chamfered surface polishing apparatus for a semiconductor wafer, which polishes a chamfered surface of a semiconductor wafer, comprising: a rotating mechanism that holds the semiconductor wafer and rotatably supports the semiconductor wafer in a circumferential direction thereof; A polishing cloth supported so that it can travel in a direction different from the circumferential direction of the semiconductor wafer held by the mechanism, a polishing cloth drive mechanism for moving the polishing cloth, and a semiconductor wafer and a polishing cloth held by the rotating mechanism. And a polishing cloth displacing mechanism for bringing the polishing cloth and the chamfered surface of the semiconductor wafer into contact with each other by relatively separating and bringing the chamfered surface and the chamfered surface of the semiconductor wafer into contact with each other. 3. The polishing cloth drive mechanism comprises a polishing drum rotatably supported about an axis parallel to the front and back surfaces of the semiconductor wafer, and a drive source for rotating the polishing drum. The chamfered surface polishing apparatus according to claim 2, wherein is attached to the outer peripheral surface of the polishing drum. 4. The polishing cloth driving mechanism supports a polishing plate arranged in parallel to a chamfered surface of the semiconductor wafer, and supports the polishing cloth along the plate, and the polishing cloth is attached to the semiconductor wafer. 3. The chamfering of a semiconductor wafer according to claim 2, further comprising: a polishing cloth support portion that is slidable along the chamfered surface; and a drive source that is attached to the polishing cloth support portion and operates the polishing cloth. Surface polishing device.