JPH0916122A - Image display device and its driving method - Google Patents
Image display device and its driving methodInfo
- Publication number
- JPH0916122A JPH0916122A JP7163176A JP16317695A JPH0916122A JP H0916122 A JPH0916122 A JP H0916122A JP 7163176 A JP7163176 A JP 7163176A JP 16317695 A JP16317695 A JP 16317695A JP H0916122 A JPH0916122 A JP H0916122A
- Authority
- JP
- Japan
- Prior art keywords
- light emission
- linear element
- image display
- display device
- nonlinear element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 7
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000003990 capacitor Substances 0.000 claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 238000005401 electroluminescence Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 2
- 241001663154 Electron Species 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、画像表示装置に係り、
例えば有機ＥＬ画像表示装置のような、エレクトロルミ
ネセンス（ＥＬ）画像表示装置およびその駆動方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image display device,
The present invention relates to an electroluminescence (EL) image display device such as an organic EL image display device and a driving method thereof.
【０００２】[0002]
【従来の技術】図４、図５は従来例を示した図である。
以下、これらの図面に基づいて従来例を説明する。2. Description of the Related Art FIGS. 4 and 5 are views showing a conventional example.
Hereinafter, a conventional example will be described with reference to these drawings.
【０００３】図４（Ａ）は、パネルブロック図であり、
ディスプレイ（表示）パネル１０には、ディスプレイ画
面１１、Ｘ軸のシフトレジスタ１２、Ｙ軸のシフトレジ
スタ１３が設けてある。FIG. 4 (A) is a panel block diagram.
The display panel 10 is provided with a display screen 11, an X-axis shift register 12, and a Y-axis shift register 13.
【０００４】ディスプレイ画面１１には、ＥＬ電源が供
給されており、またＸ軸のシフトレジスタ１２には、シ
フトレジスタ電源の供給とＸ軸同期信号の入力が行われ
る。さらにＹ軸のシフトレジスタ１３には、シフトレジ
スタ電源の供給とＹ軸同期信号の入力が行われる。ま
た、Ｘ軸のシフトレジスタ１２の出力部に画像データ信
号の出力が設けてある。The display screen 11 is supplied with EL power, and the X-axis shift register 12 is supplied with shift register power and input with an X-axis synchronizing signal. Furthermore, the Y-axis shift register 13 is supplied with a shift register power supply and input with a Y-axis synchronizing signal. Further, an output of the X-axis shift register 12 is provided with an output of an image data signal.
【０００５】図４（Ｂ）は、図４（Ａ）のＡ部の拡大説
明図であり、ディスプレイ画面１１の１画素（点線の四
角で示す）は、トランジスタが２個、コンデンサが１
個、ＥＬ素子が１個より構成されている。FIG. 4B is an enlarged explanatory view of the portion A of FIG. 4A. One pixel (indicated by a dotted square) of the display screen 11 has two transistors and one capacitor.
And one EL element.
【０００６】この１画素の発光動作は、例えば、Ｙ軸の
シフトレジスタ１３で選択信号Ｙ１の出力があり、また
Ｘ軸のシフトレジスタ１２で選択信号Ｘ１の出力があっ
た場合、トランジスタＴｙ１１とトランジスタＴｘ１が
オンとなる。For example, when the Y-axis shift register 13 outputs the selection signal Y1 and the X-axis shift register 12 outputs the selection signal X1, the light emission operation of one pixel is performed by the transistor Ty11 and the transistor Ty11. Tx1 is turned on.
【０００７】このため、画像データ（映像信号）ＶＬ
は、非線形素子（ＢＩＡＳ ＴＦＴ）Ｍ１１である薄膜
トランジスタのゲートに入力される。これにより、この
ゲート電圧に応じた電流がＥＬ電源から非線形素子Ｍ１
１のドレイン、ソース間に流れ、ＥＬ素子ＥＬ１１が発
光する。Therefore, the image data (video signal) VL
Is input to the gate of a thin film transistor which is a non-linear element (BIAS TFT) M11. As a result, a current corresponding to the gate voltage is supplied from the EL power source to the non-linear element M1.
It flows between the drain and the source of No. 1 and the EL element EL11 emits light.
【０００８】次のタイミングでは、Ｘ軸のシフトレジス
タ１２は、選択信号Ｘ１の出力をオフとし、選択信号Ｘ
２を出力することになるが、非線形素子Ｍ１１のゲート
電圧は、コンデンサＣ１１で保持されるため、次にこの
画素が選択されるまでＥＬ素子ＥＬ１１の前記発光は、
持続することになる。At the next timing, the X-axis shift register 12 turns off the output of the selection signal X1 and the selection signal X1.
However, since the gate voltage of the non-linear element M11 is held by the capacitor C11, the light emission of the EL element EL11 continues until the next pixel is selected.
It will continue.
【０００９】図５に一画素を抜き出して示す如く、一画
素毎のＥＬ素子を発光制御用の非線形素子（ＢＩＡＳ
ＴＦＴ）Ｍに直列接続し、この非線形素子（ＢＩＡＳ
ＴＦＴ）Ｍのゲート電極に信号保持用のキャパシタＣを
接続する。As shown by extracting one pixel in FIG. 5, the EL element for each pixel is a non-linear element (BIAS) for controlling light emission.
This nonlinear element (BIAS)
A signal holding capacitor C is connected to the gate electrode of TFT) M.
【００１０】そしてこの信号保持用のキャパシタＣにデ
ータ書き込み用の非線形素子（ＳＥＬＥＣＴ−ＳＷ用Ｔ
ＦＴ）Ｔｙを接続し、このデータ書き込み用の非線形素
子（ＳＥＬＥＣＴ−ＳＷ用ＴＦＴ）ＴｙにＹ座標選択信
号ＹｎとＸ座標選択信号により選択された画像データ
（映像信号）ＶＬを印加する。A non-linear element for writing data (SELECT-SW T for the signal holding capacitor C is provided.
FT) Ty is connected, and the image data (video signal) VL selected by the Y coordinate selection signal Yn and the X coordinate selection signal is applied to the non-linear element (SELECT-SW TFT) Ty for writing data.
【００１１】この画像データＶＬにより前記信号保持用
のキャパシタＣに電荷を蓄積し、この信号保持用のキャ
パシタＣに蓄積された電圧により前記発光制御用の非線
形素子（ＢＩＡＳ ＴＦＴ）Ｍに流れる電流を制御する
ことにより、ＥＬ素子の発光強度が決定される。（“Ａ
６×６−in 20−lpi Electroluminescent DisplayPan
el ”T.P.BRODY,FANG CHEN LUO,et.al.IEEE Trans.Elec
tron Devices,Vol.ED-22,No.9,Sept.1975、p739〜p749
参照）The image data VL causes charges to be stored in the signal holding capacitor C, and the voltage stored in the signal holding capacitor C causes a current to flow in the non-linear element (BIAS TFT) M for light emission control. By controlling, the emission intensity of the EL element is determined. ("A
6 x 6-in 20-lpi Electroluminescent DisplayPan
el ”TPBRODY, FANG CHEN LUO, et.al.IEEE Trans.Elec
tron Devices, Vol.ED-22, No.9, Sept.1975, p739 ~ p749
reference)
【００１２】[0012]
【発明が解決しようとする課題】ところが、発光制御用
の非線形素子（ＢＩＡＳ ＴＦＴ）Ｍに流れる電流と、
キャパシタＣに蓄積された電圧との特性関係は必ずしも
一次比例の関係ではない。このため入力された映像信号
の大きさとＥＬ素子の発光輝度との関係が直線的でない
ため、入力映像信号に忠実にＥＬ素子の発光輝度が得ら
れないため、映像信号の大きさに忠実な発光輝度の再現
が難しかった。However, a current flowing through a non-linear element (BIAS TFT) M for controlling light emission,
The characteristic relationship with the voltage accumulated in the capacitor C is not necessarily linearly proportional. For this reason, since the relationship between the size of the input video signal and the light emission brightness of the EL element is not linear, the light emission brightness of the EL element cannot be obtained faithfully to the input video signal. It was difficult to reproduce the brightness.
【００１３】例えばこの非線形素子Ｍが電界効果トラン
ジスタ（ＴＦＴ）の場合、これに流れる電流は飽和領域
で次式のものとなる。 Ｉｄｓ＝（１／２）（Ｗ／Ｌ）μ0 Ｃ0 （Ｖｇｓ−Ｖｔ
ｈ）2 Ｉｄｓ ＴＦＴに流れる電流 Ｖｇｓ ゲートソース間電圧（キャパシタＣに蓄積され
た電圧） Ｃ0 単位面積当りのゲート容量 μ0 移動度 Ｗ ＴＦＴのゲートのチャネル幅 Ｌ ＴＦＴのゲートのチャネル長 Ｖｔｈ ＴＦＴの閾値電圧 前記式より明らかな如く、ＩｄｓとＶｇｓとは比例関係
でなく、このため映像信号に比例した発光輝度を得るこ
とができなかった。For example, when the non-linear element M is a field effect transistor (TFT), the current flowing through it is in the saturation region and given by the following equation. Ids = (1/2) (W / L) μ 0 C 0 (Vgs-Vt
h) 2 Ids Current flowing in TFT Vgs Gate-source voltage (voltage accumulated in capacitor C) C 0 Gate capacitance per unit area μ 0 Mobility W TFT gate channel width L TFT gate channel length Vth TFT Threshold voltage As is clear from the above equation, Ids and Vgs are not in a proportional relationship, and therefore, it was not possible to obtain the emission luminance in proportion to the video signal.
【００１４】本発明は、前記従来の課題を解決し、入力
電圧と発光制御用の非線形素子に流れる電流を一次比例
関係にすることで、入力映像信号に忠実な薄膜画素素子
の輝度を得ることを目的とする。The present invention solves the above-mentioned conventional problems and obtains the luminance of a thin film pixel element faithful to an input video signal by making the input voltage and the current flowing through the non-linear element for light emission control linearly proportional. With the goal.
【００１５】[0015]
【課題を解決するための手段】前記目的を達成するた
め、本発明では、図１に示す如く、発光用の薄膜画素素
子（ＥＬ素子）とその発光制御用の非線形素子（ＢＩＡ
Ｓ ＴＦＴ）と選択用のスイッチ用ＴＦＴ等で構成され
たパネル１０とは別に前記発光制御用の非線形素子と同
じ電圧−電流特性を有する参照用（第２の）非線形素子
２を設ける。In order to achieve the above object, according to the present invention, as shown in FIG. 1, a thin film pixel element (EL element) for light emission and a non-linear element (BIA) for controlling light emission thereof are provided.
A reference (second) non-linear element 2 having the same voltage-current characteristics as the non-linear element for light emission control is provided separately from the panel 10 composed of ST TFT) and a switching TFT for selection.
【００１６】一方、入力信号である画像信号ＶＬを参照
変換部１に入力し、この参照変換部１の一方の出力を参
照用非線形素子２に入力して、参照用非線形素子２に入
力画像信号の大きさに比例した電流を流すとともに、そ
のときの参照用非線形素子２に印加する制御信号ＶＬｏ
をパネル１０内の発光制御用の非線形素子に印加する。On the other hand, the image signal VL, which is an input signal, is input to the reference conversion unit 1, one output of the reference conversion unit 1 is input to the reference nonlinear element 2, and the input image signal is input to the reference nonlinear element 2. Of a control signal VLo applied to the reference non-linear element 2 at that time while flowing a current proportional to the magnitude of
Is applied to the nonlinear element for controlling light emission in the panel 10.
【００１７】[0017]
【作用】これにより発光制御用の非線形素子にも、参照
用非線形素子２と同様に、入力画像信号ＶＬの大きさに
比例した電流を流すことができるので、発光用のＥＬ素
子を、入力画像信号の大きさに忠実に比例した輝度で制
御することができる。As a result, a current proportional to the magnitude of the input image signal VL can be made to flow to the non-linear element for light emission control as well as the non-linear element for reference 2. It is possible to control the brightness with faithful proportion to the magnitude of the signal.
【００１８】[0018]
【実施例】本発明の一実施例を図２に基づき説明する。
図２（Ａ）は本発明の一実施例の構成図であり、参照変
換部１は画像信号ＶＬが一方の入力部に入力される演算
増幅器（オペアンプ）ＯＰを具備し、その出力が参照用
の第２の非線形素子Ｍ１であるＴＦＴ（薄膜トランジス
タ）のゲート電圧となる。また参照用の非線形素子Ｍ１
には参照抵抗Ｒｓが接続されている。そして参照用の非
線形素子Ｍ１の参照電位Ｖｓが演算増幅器ＯＰの他方の
入力部に入力される。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIG.
FIG. 2A is a configuration diagram of an embodiment of the present invention, in which the reference conversion unit 1 includes an operational amplifier (op-amp) OP to which the image signal VL is input to one input unit, the output of which is for reference. It becomes the gate voltage of the TFT (thin film transistor) which is the second nonlinear element M1. In addition, the nonlinear element M1 for reference
A reference resistor Rs is connected to. Then, the reference potential Vs of the non-linear element M1 for reference is input to the other input section of the operational amplifier OP.
【００１９】従って、画像信号ＶＬが演算増幅器ＯＰに
入力されると、演算増幅器ＯＰは入力画像信号ＶＬと参
照電位Ｖｓが等しくなるように非線形素子Ｍ１を制御す
るので、画像信号ＶＬに比例した電流が参照用の非線形
素子Ｍ１の電流Ｉｓとして流れる。Therefore, when the image signal VL is input to the operational amplifier OP, the operational amplifier OP controls the non-linear element M1 so that the input image signal VL and the reference potential Vs become equal to each other, so that a current proportional to the image signal VL is generated. Flows as the current Is of the non-linear element M1 for reference.
【００２０】このときの演算増幅器ＯＰの出力電圧ＶＬ
ｏをパネル１０側の発光制御用の非線形素子のゲート電
圧に印加すれば、この非線形素子には、これまた画像信
号ＶＬに比例した電流が流れるので、これに接続された
薄膜画素素子であるＥＬ素子を画像信号ＶＬに比例した
輝度で発光制御することができる。Output voltage VL of operational amplifier OP at this time
When o is applied to the gate voltage of the non-linear element for light emission control on the panel 10 side, a current proportional to the image signal VL also flows through the non-linear element. It is possible to control the light emission of the element with a brightness proportional to the image signal VL.
【００２１】図２（Ｂ）は参照変換部１に入力される画
像信号ＶＬとパネル１０側の選択された薄膜画素素子
（ＥＬ素子）に流れる電流Ｉｄｓとの関係が一次比例関
係であることを示している。FIG. 2B shows that the relationship between the image signal VL input to the reference conversion unit 1 and the current Ids flowing in the selected thin film pixel element (EL element) on the panel 10 side is a linear proportional relationship. Shows.
【００２２】この実施例においては、パネル側の非線形
素子であるＴＦＴと、参照用の非線形素子Ｍ１であるＴ
ＦＴを同一の基板上に同時に形成することにより、これ
らのＴＦＴの特性をほぼ同一のものとして容易に構成す
ることができる。In this embodiment, a TFT which is a non-linear element on the panel side and a T which is a non-linear element M1 for reference.
By simultaneously forming FTs on the same substrate, these TFTs can be easily configured to have substantially the same characteristics.
【００２３】本発明の他の実施例を図３に基づき説明す
る。参照変換部１には、トランジスタＱ１と該トランジ
スタＱ１のベースに接続された抵抗Ｒ１とエミッタに接
続された抵抗Ｒ２が設けてあり、この参照変換部１は画
像信号ＶＬに比例した電流を出力する電流源となるもの
である。Another embodiment of the present invention will be described with reference to FIG. The reference conversion unit 1 is provided with a transistor Q1, a resistor R1 connected to the base of the transistor Q1 and a resistor R2 connected to the emitter, and the reference conversion unit 1 outputs a current proportional to the image signal VL. It serves as a current source.
【００２４】参照用非線形素子２には、参照用の非線形
素子Ｍ１であるＴＦＴ（薄膜トランジスタ）が設けてあ
り、参照変換部１の出力（トランジスタＱ１のコレク
タ）がこのＴＦＴに接続される。そして、このＴＦＴの
出力電圧ＶＬｏをパネル１０側の発光制御用の非線形素
子であるＴＦＴのゲート電圧に印加する。これにより、
参照用の非線形素子Ｍ１であるＴＦＴと発光制御用の非
線形素子であるＴＦＴとは、カレントミラーとして機能
する。The reference non-linear element 2 is provided with a TFT (thin film transistor) which is the non-linear element M1 for reference, and the output of the reference conversion section 1 (collector of the transistor Q1) is connected to this TFT. Then, the output voltage VLo of this TFT is applied to the gate voltage of the TFT, which is a non-linear element for light emission control on the panel 10 side. This allows
The TFT, which is the non-linear element M1 for reference, and the TFT, which is the non-linear element for light emission control, function as a current mirror.
【００２５】従って、画像信号ＶＬが抵抗Ｒ１に入力さ
れると、それに比例した電流Ｉｓが非線形素子Ｍ１、ト
ランジスタＱ１、抵抗Ｒ２、共通電位（アース）に流れ
る。このように画像信号ＶＬに比例した電流が参照用の
非線形素子Ｍ１に流れ、これと同じ電流が発光制御用の
非線形素子に流れることになる。Therefore, when the image signal VL is input to the resistor R1, a current Is proportional thereto flows through the non-linear element M1, the transistor Q1, the resistor R2 and the common potential (ground). In this way, a current proportional to the image signal VL flows through the reference nonlinear element M1, and the same current flows through the emission control nonlinear element.
【００２６】このため、パネル１０側の発光制御用の非
線形素子には、画像信号ＶＬに比例した電流が流れるの
で、これに接続された薄膜画素素子であるＥＬ素子を画
像信号ＶＬに比例した輝度で発光制御することができ
る。Therefore, a current proportional to the image signal VL flows through the non-linear element for light emission control on the panel 10 side, so that the EL element, which is a thin film pixel element connected to this, is connected to the luminance proportional to the image signal VL. The light emission can be controlled with.
【００２７】この実施例においても、パネル側の非線形
素子であるＴＦＴと、参照用の非線形素子Ｍ１であるＴ
ＦＴを同一の基板上に同時に形成することにより、これ
らのＴＦＴの特性をほぼ同一のものとして容易に構成す
ることができる。Also in this embodiment, the TFT which is the non-linear element on the panel side and the T which is the non-linear element M1 for reference are used.
By simultaneously forming FTs on the same substrate, these TFTs can be easily configured to have substantially the same characteristics.
【００２８】また、この参照用の非線形素子Ｍ１は複数
個設ける必要はなく、パネル側の発光制御用の非線形素
子であるＴＦＴのチャネルの形等にあわせ一個で対応す
ることができる。Further, it is not necessary to provide a plurality of non-linear elements M1 for reference, and a single non-linear element M1 can be used according to the shape of the channel of the TFT, which is a non-linear element for light emission control on the panel side.
【００２９】なお、前記実施例では非線形素子として薄
膜で製造したＴＦＴを用いた場合の説明をしたが、これ
に限定されるものではなく、他の製法で製造した非線形
素子を用いることもできる。In the above embodiment, the case where the thin film TFT is used as the non-linear element has been described, but the present invention is not limited to this, and a non-linear element manufactured by another manufacturing method may be used.
【００３０】[0030]
【発明の効果】以上説明したように、本発明によれば次
のような効果がある。 ：請求項１記載によれば、発光制御用の非線形素子と
同様な特性を持つ第２の非線形素子を用いて入力する画
像信号を前記発光素子制御用の非線形素子に適した画像
信号に変換し、これをこの発光制御用の非線形素子の制
御電圧として入力するので映像信号に忠実な輝度を再現
することができる。As described above, the present invention has the following effects. According to claim 1, the image signal input by using the second nonlinear element having the same characteristics as the nonlinear element for controlling light emission is converted into an image signal suitable for the nonlinear element for controlling the light emitting element. Since this is input as the control voltage of the non-linear element for light emission control, it is possible to reproduce the luminance faithful to the video signal.
【００３１】：請求項２記載によれば、発光制御用の
非線形素子と、第２の非線形素子とを同時に構成したも
のを使用するので、これらの特性をほとんど同様の特性
のものにすることができ、従って映像信号に忠実な輝度
を再現する画像表示装置を提供することができる。According to the second aspect, since the non-linear element for controlling light emission and the second non-linear element are used at the same time, these characteristics can be made almost the same. Therefore, it is possible to provide the image display device which reproduces the luminance faithful to the video signal.
【００３２】：請求項３記載によれば、参照変換部に
演算増幅器を用いるので入力映像信号に忠実な薄膜画素
素子の輝度を得ることができる。 ：請求項４記載によれば、参照変換部に電流源を用
い、第２の非線形素子と発光制御用の非線形素子とでカ
レントミラーを構成するので、演算増幅器等の複雑な回
路を必要とせず、入力映像信号に忠実な薄膜画素素子の
輝度を得ることができる。According to the third aspect, since the operational amplifier is used in the reference conversion section, it is possible to obtain the luminance of the thin film pixel element which is faithful to the input video signal. According to the fourth aspect, since the current source is used in the reference conversion unit and the current mirror is configured by the second nonlinear element and the nonlinear element for controlling light emission, a complicated circuit such as an operational amplifier is not required. It is possible to obtain the luminance of the thin film pixel element that is faithful to the input video signal.
【００３３】：請求項５記載によれば、発光制御用の
非線形素子と同様の電圧−電流特性を持つ第２の非線形
素子を設け、この第２の非線形素子の出力を参照して調
整された画像信号で、前記発光制御用の非線形素子を駆
動する方法としたので、入力映像信号に忠実な薄膜画素
素子の輝度を得ることができる。According to the fifth aspect, a second non-linear element having a voltage-current characteristic similar to that of the non-linear element for controlling light emission is provided, and the output is adjusted with reference to the output of the second non-linear element. Since the non-linear element for light emission control is driven by the image signal, the luminance of the thin film pixel element faithful to the input video signal can be obtained.
【００３４】：請求項６記載によれば、発光制御用の
非線形素子を駆動する方法において、第２の非線形素子
は、発光制御用の非線形素子と同時に形成したものを用
いるので、これらの特性をほとんど同様の特性のものに
することができ、映像信号に忠実な輝度を再現する画像
表示装置の駆動方法を提供することができる。According to the sixth aspect, in the method for driving the non-linear element for controlling light emission, the second non-linear element formed simultaneously with the non-linear element for controlling light emission is used. It is possible to provide the driving method of the image display device which can have almost the same characteristics and reproduce the luminance faithful to the video signal.
【図１】本発明の原理説明図である。FIG. 1 is a diagram illustrating the principle of the present invention.
【図２】本発明の一実施例の説明図である。FIG. 2 is an explanatory diagram of one embodiment of the present invention.
【図３】本発明の他の実施例の説明図である。FIG. 3 is an explanatory diagram of another embodiment of the present invention.
【図４】従来例の説明図（１）である。FIG. 4 is an explanatory diagram (1) of a conventional example.
【図５】従来例の説明図（２）である。FIG. 5 is an explanatory diagram (2) of a conventional example.
１ 参照変換部 ２ 第２の非線形素子（参照用非線形素子） １０ パネル ＶＬ 画像信号 ＶＬｏ 参照変換部の出力 1 Reference Converter 2 Second Non-Linear Element (Reference Non-Linear Element) 10 Panel VL Image Signal VLo Output of Reference Converter
Claims (6)
素素子の発光制御用の非線形素子と、該非線形素子のゲ
ート電極に接続された信号保持用のキヤパシタと、該キ
ヤパシタへのデータ書き込み用の非線形素子と、前記発
光制御用の非線形素子と同様の特性を持つ第２の非線形
素子と、該第２の非線形素子の出力を参照して調整され
た画像信号を、前記発光制御用の非線形素子に入力する
参照変換部とを有することを特徴とする画像表示装置。1. A thin film pixel element for each pixel, a nonlinear element for controlling light emission of the thin film pixel element, a signal holding capacitor connected to a gate electrode of the nonlinear element, and data to the capacitor. A non-linear element for writing, a second non-linear element having the same characteristics as the non-linear element for light emission control, and an image signal adjusted with reference to the output of the second non-linear element are used for the light emission control. And a reference conversion unit for inputting to the non-linear element.
の非線形素子と同時に形成されたものであることを特徴
とする請求項１記載の画像表示装置。2. The image display device according to claim 1, wherein the second non-linear element is formed simultaneously with the non-linear element for controlling light emission.
とを特徴とする請求項１記載の画像表示装置。3. The image display device according to claim 1, wherein an operational amplifier is used in the reference conversion unit.
２の非線形素子と前記発光制御用の非線形素子とでカレ
ントミラーを構成することを特徴とする請求項１記載の
画像表示装置。4. The image display device according to claim 1, wherein a current source is used for the reference conversion unit, and a current mirror is configured by the second nonlinear element and the nonlinear element for light emission control.
素子の発光制御用の非線形素子と、該非線形素子のゲー
ト電極に接続された信号保持用のキヤパシタと、該キヤ
パシタへのデータ書き込み用の非線形素子を有する画像
表示装置の駆動方法において、 前記発光制御用の非線形素子と同様の電圧−電流特性を
持つ第２の非線形素子を設け、この第２の非線形素子の
出力を参照して調整された画像信号を、前記発光制御用
の非線形素子に入力することを特徴とする画像表示装置
の駆動方法。5. A thin film pixel element for each pixel, a non-linear element for controlling light emission of the thin film pixel element, a capacitor for holding a signal connected to a gate electrode of the non-linear element, and data writing to the capacitor. In a method of driving an image display device having a non-linear element for light emission, a second non-linear element having the same voltage-current characteristics as the non-linear element for controlling light emission is provided, and the output of the second non-linear element is referred to. A method of driving an image display device, wherein the adjusted image signal is input to the non-linear element for light emission control.
用の非線形素子と同時に形成したものであることを特徴
とする請求項５記載の画像表示装置の駆動方法。6. The method for driving an image display device according to claim 5, wherein the second non-linear element is formed simultaneously with the non-linear element for controlling light emission.
Priority Applications (1)
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|---|---|---|---|
| JP16317695A JP3688757B2 (en) | 1995-06-29 | 1995-06-29 | Image display device and driving method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16317695A JP3688757B2 (en) | 1995-06-29 | 1995-06-29 | Image display device and driving method thereof |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002185518A Division JP3762720B2 (en) | 2002-06-26 | 2002-06-26 | Image display device and driving method thereof |
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| Publication Number | Publication Date |
|---|---|
| JPH0916122A true JPH0916122A (en) | 1997-01-17 |
| JP3688757B2 JP3688757B2 (en) | 2005-08-31 |
Family
ID=15768697
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16317695A Expired - Fee Related JP3688757B2 (en) | 1995-06-29 | 1995-06-29 | Image display device and driving method thereof |
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