JPH09162152A - Versatile cleaner - Google Patents
Versatile cleanerInfo
- Publication number
- JPH09162152A JPH09162152A JP32475795A JP32475795A JPH09162152A JP H09162152 A JPH09162152 A JP H09162152A JP 32475795 A JP32475795 A JP 32475795A JP 32475795 A JP32475795 A JP 32475795A JP H09162152 A JPH09162152 A JP H09162152A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- rotary shaft
- flow rate
- universal
- cleaning liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 claims abstract description 165
- 239000007788 liquid Substances 0.000 claims abstract description 74
- 238000001035 drying Methods 0.000 claims abstract description 11
- 238000007599 discharging Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 24
- 238000006073 displacement reaction Methods 0.000 claims description 9
- 238000005406 washing Methods 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 3
- 239000000428 dust Substances 0.000 abstract description 19
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 27
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 25
- 239000004065 semiconductor Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 229910021642 ultra pure water Inorganic materials 0.000 description 8
- 239000012498 ultrapure water Substances 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、回転式の万能型洗
浄装置に係り、特に、摺動部から洗浄槽内へのごみの混
入を防止した洗浄装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rotary type universal cleaning device, and more particularly to a cleaning device which prevents dust from entering a cleaning tank from a sliding portion.
【0002】[0002]
【従来の技術】近年、半導体集積回路のより一層の高集
積化に伴い、半導体ウエハの表面に形成される回路パタ
ーンはより微細化・複雑化してきている。このため、微
細な異物や微量の不純物であっても、半導体ウエハに付
着していると、半導体回路の特性は劣化し、製造の歩留
まりは低下することになる。従って、半導体製造工程に
おいて、洗浄プロセスは極めて重要である。2. Description of the Related Art In recent years, with the higher integration of semiconductor integrated circuits, the circuit patterns formed on the surface of a semiconductor wafer have become finer and more complicated. Therefore, even if a minute foreign substance or a small amount of impurities is attached to the semiconductor wafer, the characteristics of the semiconductor circuit are deteriorated and the manufacturing yield is lowered. Therefore, the cleaning process is extremely important in the semiconductor manufacturing process.
【0003】半導体ウエハの洗浄方法としては、洗浄槽
内で半導体基板を回転しながら洗浄液あるいは不活性ガ
スを噴射して洗浄、乾燥する洗浄方法が用いられてい
る。このための回転式洗浄装置では、基板保持部材の回
転軸が装置を貫通し、軸受けによって支持されている
が、この軸受けは洗浄槽内部に曝されるため、摺動によ
る発塵が洗浄槽内の雰囲気を汚染するという問題があ
る。また、貫通部等から外気が混入し、洗浄槽内部ひい
ては被洗浄物を汚染するというという問題もある。As a method for cleaning a semiconductor wafer, there is used a cleaning method in which a semiconductor substrate is rotated in a cleaning tank while a cleaning liquid or an inert gas is sprayed to clean and dry the semiconductor substrate. In the rotary cleaning device for this purpose, the rotating shaft of the substrate holding member penetrates the device and is supported by a bearing, but since this bearing is exposed inside the cleaning tank, dust generated by sliding is generated in the cleaning tank. There is a problem of polluting the atmosphere. In addition, there is also a problem that outside air is mixed in through the penetrating portion or the like and contaminates the inside of the cleaning tank and thus the object to be cleaned.
【0004】[0004]
【発明が解決しようとする課題】かかる状況に鑑み、本
発明は、回転式の万能型洗浄装置であって、回転摺動部
からの発塵の問題を排除した洗浄装置を提供することを
目的とする。さらには、外気と遮断した状態で洗浄及び
乾燥処理を行うことが可能な洗浄装置を提供することを
目的とする。SUMMARY OF THE INVENTION In view of the above situation, an object of the present invention is to provide a rotary type universal cleaning apparatus which eliminates the problem of dust generation from the rotary sliding portion. And Furthermore, it aims at providing the washing | cleaning apparatus which can perform a washing | cleaning and drying process in the state shielded from the open air.
【0005】[0005]
【課題を解決するための手段】本発明の万能型洗浄装置
は、洗浄液の供給部及び排出部を有する洗浄槽の内部
に、被洗浄物の保持部材が回転軸に連結されて配置さ
れ、前記被洗浄物を回転しながら洗浄及び/又は乾燥す
る洗浄装置であって、前記回転軸が前記排出部を貫通す
ることを特徴とする。According to the universal cleaning apparatus of the present invention, a holding member for an object to be cleaned is arranged inside a cleaning tank having a cleaning liquid supply section and a cleaning solution connection, A cleaning device for cleaning and / or drying an object to be cleaned while rotating the object, wherein the rotating shaft penetrates the discharge part.
【0006】前記排出部から排出される洗浄液の流量を
調節する流量制御手段を有することを特徴とする。It is characterized in that it has flow rate control means for adjusting the flow rate of the cleaning liquid discharged from the discharge part.
【0007】前記流量制御手段は、前記回転軸と前記排
出部との間隙を変化させて排出流量を調節することを特
徴とし、特に、少なくとも2つの異なる外径を有する前
記回転軸と、前記排出部と前記回転軸との軸方向の相対
位置を変位させる変位手段とから構成するのが好まし
い。さらには、前記の少なくとも2つの異なる外径を有
する回転軸は、その外径が所定の角度をもって変化する
部分を1又は2以上有し、前記排出部はその内径が所定
の角度をもって変化する部分を1又は2以上有する構成
とするのが好ましい。The flow rate control means adjusts the discharge flow rate by changing the gap between the rotary shaft and the discharge part. In particular, the rotary shaft having at least two different outer diameters and the discharge shaft. It is preferable that it is configured by a displacement unit that displaces the relative position in the axial direction between the portion and the rotating shaft. Further, the rotating shaft having at least two different outer diameters has one or more portions whose outer diameters change at a predetermined angle, and the discharging portion has a portion whose inner diameter changes at a predetermined angle. It is preferable to have a configuration having 1 or 2 or more.
【0008】また、前記流量制御手段は、前記回転軸又
は排出部に凹凸、フィン又は溝を配設し、前記回転軸の
回転方向及び/又は回転速度により流量を調節すること
を特徴とする。Further, the flow rate control means is characterized in that unevenness, fins or grooves are provided on the rotary shaft or the discharge part, and the flow rate is adjusted by the rotation direction and / or the rotation speed of the rotary shaft.
【0009】また、前記回転軸に前記排出部から排出さ
れる洗浄液を受けるための容器を配設するのが好まし
く、該容器に溜まる洗浄液を前記回転軸内を通してその
下部から排出するように前記回転軸の少なくとも一部を
中空にするのが好ましい。Further, it is preferable that a container for receiving the cleaning liquid discharged from the discharging portion is disposed on the rotary shaft, and the cleaning liquid accumulated in the container is passed through the rotary shaft and discharged from a lower portion thereof. It is preferable that at least a part of the shaft is hollow.
【0010】本発明の万能型洗浄装置は、前記排出部か
ら排出される洗浄液自体により前記洗浄槽内部を外気か
ら遮断する外気遮断手段を設けたことを特徴とする。The universal cleaning apparatus of the present invention is characterized in that it is provided with an outside air blocking means for blocking the inside of the cleaning tank from the outside air by the cleaning liquid itself discharged from the discharge part.
【0011】また、本発明の万能型洗浄装置は、前記保
持部材は基板収納カセットの保持部材であって、低速又
は中速回転にて洗浄を行い、高速回転により遠心力を用
いて乾燥させることが可能としたことを特徴とする。In the universal cleaning apparatus of the present invention, the holding member is a holding member for the substrate storage cassette, and cleaning is performed at low speed or medium speed rotation, and drying is performed by centrifugal force at high speed rotation. Is possible.
【0012】[0012]
【発明の実施の形態】本発明の半導体ウエハの洗浄乾燥
装置の一例を図1及び図2に示し、これを用いてを本発
明を説明する。BEST MODE FOR CARRYING OUT THE INVENTION An example of a semiconductor wafer cleaning / drying apparatus according to the present invention is shown in FIGS. 1 and 2, and the present invention will be described with reference to FIG.
【0013】図1は本発明の洗浄装置の基本概念を示す
概念図である。FIG. 1 is a conceptual diagram showing the basic concept of the cleaning apparatus of the present invention.
【0014】図1において、101は洗浄槽、102は
蓋、103は洗浄液供給管、104は半導体基板105
の回転保持部材である。106は排出部であって、図の
例では、洗浄槽101の底面の中央に配置され、下方に
いくに従い開口径が減少するテーパーを持った配管が用
いられている。この排出部106を回転軸107が貫通
し、その一方が保持部材104、他方が駆動用のモータ
109と連結されている。回転軸107には、排出部の
テーパーと同じ角度のテーパー部を有する大径部110
を有するとともに、回転軸と共に回転する洗浄液の受け
容器108が設けられている。In FIG. 1, 101 is a cleaning tank, 102 is a lid, 103 is a cleaning liquid supply pipe, and 104 is a semiconductor substrate 105.
It is a rotation holding member. Reference numeral 106 denotes a discharge part, and in the example shown in the figure, a pipe arranged at the center of the bottom surface of the cleaning tank 101 and having a taper whose opening diameter decreases as it goes downward is used. A rotating shaft 107 penetrates through the discharging portion 106, one of which is connected to the holding member 104 and the other of which is connected to a driving motor 109. The rotating shaft 107 has a large diameter portion 110 having a taper portion at the same angle as the taper of the discharge portion.
And a cleaning liquid receiving container 108 that rotates together with the rotating shaft.
【0015】図1に示すように、本発明の洗浄装置は、
回転軸を支持する軸受けを洗浄槽内から排除したため、
従来装置で問題となる回転軸と軸受け間等の摺動部での
発塵の問題を回避することが可能となる。また、回転軸
と排出部の間を流れる洗浄液により外部からごみ等の混
入も防止することができる。As shown in FIG. 1, the cleaning apparatus of the present invention is
Since the bearing that supports the rotating shaft has been removed from the cleaning tank,
It is possible to avoid the problem of dust generation at the sliding portion between the rotating shaft and the bearing, which is a problem in the conventional device. Further, the cleaning liquid flowing between the rotary shaft and the discharge portion can prevent foreign matters such as dust from entering from the outside.
【0016】受け容器108に溜まる液は、例えば図3
に示すように、受け容器108に排出パイプ302を取
り付け、環状の排出液受け溝303に排液を排出する構
造としても良い。この場合、排出パイプ302は回転時
のバランスを考慮して複数本設けるのが好ましい。ある
いは、受け溝303と同様環状にしても良い。The liquid accumulated in the receiving container 108 is, for example, as shown in FIG.
As shown in, the drain pipe 302 may be attached to the receiving container 108, and the drainage may be drained to the annular drainage receiving groove 303. In this case, it is preferable to provide a plurality of discharge pipes 302 in consideration of the balance during rotation. Alternatively, it may be annular like the receiving groove 303.
【0017】また、受け容器108に溜まる液は、例え
ば図4に説明するように、受け容器108を溢流する洗
浄液を受ける容器402をさらに設けても良い。Further, the liquid accumulated in the receiving container 108 may be further provided with a container 402 for receiving the cleaning liquid overflowing the receiving container 108, for example, as illustrated in FIG.
【0018】さらには、図6に示すように、回転軸10
7の内部を、受け容器108から下の部分で中空にし
て、容器108に溜まる洗浄液を排出口601及び中空
部602を通して回転軸107の下部から洗浄液を排出
させる構造としても良い。また、例えば回転軸107の
下端にバルブ603を設けることにより、排出量を調節
することができる。Further, as shown in FIG.
The inside of 7 may be hollow at the lower part from the receiving container 108, and the cleaning liquid accumulated in the container 108 may be discharged from the lower part of the rotating shaft 107 through the discharge port 601 and the hollow portion 602. Further, the discharge amount can be adjusted by providing a valve 603 at the lower end of the rotary shaft 107, for example.
【0019】図2は、本発明の洗浄装置の好適な例を示
す概念図である。FIG. 2 is a conceptual diagram showing a preferred example of the cleaning apparatus of the present invention.
【0020】図2において、201は洗浄槽、202は
蓋、203は複数の洗浄液供給管、204は不活性ガス
供給管である。205はメガソニックの超音波振動子、
206は半導体基板加熱用の赤外線ランプ、207は半
導体基板208の回転保持部材である。また、洗浄槽2
01には半導体基板搬送装置(不図示)が接続され、大
気に接することなく半導体基板を搬出・搬入可能な構造
となっている。In FIG. 2, 201 is a cleaning tank, 202 is a lid, 203 is a plurality of cleaning liquid supply pipes, and 204 is an inert gas supply pipe. 205 is a megasonic ultrasonic transducer,
Reference numeral 206 is an infrared lamp for heating the semiconductor substrate, and 207 is a rotation holding member for the semiconductor substrate 208. Also, the cleaning tank 2
A semiconductor substrate transfer device (not shown) is connected to 01, and has a structure capable of carrying out and carrying in the semiconductor substrate without contacting the atmosphere.
【0021】209は洗浄液の排出部、210は図1と
同様の構造の大径部211を有する回転軸である。この
回転軸210は、回転保持部材207と駆動用のモータ
217とに連結されており、軸受け220で支持されて
いる。Reference numeral 209 is a cleaning liquid discharge portion, and 210 is a rotary shaft having a large diameter portion 211 having the same structure as in FIG. The rotating shaft 210 is connected to the rotation holding member 207 and a driving motor 217, and is supported by a bearing 220.
【0022】212は排出部209や洗浄槽201内を
外気から遮断する外気遮断手段であり、上面を有しその
中心が回転軸210に溶接された円筒体213、液溜り
部215、液面保持用排液配管216から構成される。
また、214及び219は、それぞれ洗浄液を交換する
際に液溜まり部215の洗浄液を排出するためのドレン
用バルブ及び配管である。図2の洗浄装置は、軸受け2
20を設けた構成としているが、軸受け220で発生し
たごみ等は、液溜まり部215に溜まる洗浄液自体によ
り遮断され、洗浄槽201内への混入は完全に防止され
る。Reference numeral 212 denotes an outside air blocking means for blocking the inside of the discharge part 209 and the inside of the cleaning tank 201 from the outside air. The drainage pipe 216 for use.
Further, 214 and 219 are a drain valve and a pipe for discharging the cleaning liquid in the liquid reservoir 215 when the cleaning liquid is exchanged. The cleaning device shown in FIG.
Although 20 is provided, dust and the like generated in the bearing 220 is blocked by the cleaning liquid itself accumulated in the liquid reservoir 215, and is completely prevented from entering the cleaning tank 201.
【0023】218は排出管209と回転軸と軸方向の
相対位置を変位させる変位手段であり、221はモータ
ー支持部材であり、これらはハウジング222内に収納
される。なお、洗浄液の蒸気・ミストによる汚染を防止
するために、ハウジング222内を乾燥N2ガス、清浄
空気又は不活性ガス等を流すよう構成されている。Reference numeral 218 is a displacement means for displacing the relative position of the discharge pipe 209 and the rotary shaft in the axial direction, 221 is a motor support member, and these are housed in the housing 222. In addition, in order to prevent the cleaning liquid from being contaminated by steam or mist, a dry N 2 gas, clean air, an inert gas, or the like is caused to flow through the housing 222.
【0024】図2の装置を用いて、フッ酸、超純水リン
ス、イソプロピルアルコール(IPA)洗浄、乾燥工程
からなる半導体基板の洗浄方法を説明する。A method of cleaning a semiconductor substrate including hydrofluoric acid, ultrapure water rinsing, isopropyl alcohol (IPA) cleaning, and a drying step will be described using the apparatus shown in FIG.
【0025】(a)フッ酸洗浄 まず、不図示の搬送装置によりシリコンウエハ208を
保持部材207に設置する。(A) Hydrofluoric Acid Cleaning First, the silicon wafer 208 is set on the holding member 207 by a transfer device (not shown).
【0026】第1の洗浄液供給管203からフッ酸を洗
浄槽201内に注ぎ、シリコンウエハを十分に覆った時
点で、保持部材207を低速〜中速で回転(例えば30
〜500rpm)させ、超音波振動子205に電圧を印
加して1〜5MHzのメガソニックの超音波をウエハに
照射してウエハ洗浄を行う。メガソニックの超音波を印
加することにより、洗浄効果は一層向上し、特に例えば
トレンチ等の溝のごみ・不純物等も完全に除去すること
ができる。When the hydrofluoric acid is poured into the cleaning tank 201 from the first cleaning liquid supply pipe 203 and the silicon wafer is sufficiently covered, the holding member 207 is rotated at a low to medium speed (for example, 30).
˜500 rpm), a voltage is applied to the ultrasonic transducer 205, and a megasonic ultrasonic wave of 1 to 5 MHz is applied to the wafer to clean the wafer. By applying megasonic ultrasonic waves, the cleaning effect is further improved, and especially dust and impurities in the grooves such as trenches can be completely removed.
【0027】フッ酸は回転軸210の大径部211と排
出部209との間隙と通って下方に流れ、液溜り部21
5から液面保持配管216を通って不図示の排液槽に排
出される。従って、洗浄槽201の内部は、回転軸21
0の大径部211と排出部209との間隙並びに液溜ま
り部215に溜まる洗浄液自体によって、軸受け等で発
生するごみ等から完全に遮断されることになる。The hydrofluoric acid flows downward through the gap between the large diameter portion 211 of the rotary shaft 210 and the discharge portion 209, and the liquid pool portion 21.
5 through the liquid level holding pipe 216 and is discharged to a drainage tank (not shown). Therefore, inside the cleaning tank 201,
The gap between the large-diameter portion 211 of 0 and the discharge portion 209 and the cleaning liquid itself accumulated in the liquid reservoir 215 completely block dust and the like generated from bearings and the like.
【0028】以上の洗浄においては、シリコンウエハに
付着した不純物やごみ等は、ウエハの回転運動、フレッ
シュな洗浄液の供給、メガソニックの超音波の作用によ
り、ウエハ表面から極めて効果的に除去され、上記の間
隙を通って外部へ排出される。In the above cleaning, impurities, dust and the like adhering to the silicon wafer are extremely effectively removed from the wafer surface by the rotational movement of the wafer, the supply of a fresh cleaning liquid, and the action of megasonic ultrasonic waves. It is discharged to the outside through the above gap.
【0029】なお、回転軸210の大径部211と排出
管209との間隙の大きさにより、この間隙を通って液
が排出される流量が決定されるが、供給量の1〜10%
とするのが好ましい。通常、この間隙は1〜10mmと
されるが、液の粘度に応じて適宜決められる。The size of the gap between the large-diameter portion 211 of the rotary shaft 210 and the discharge pipe 209 determines the flow rate of the liquid discharged through this gap, but is 1 to 10% of the supply amount.
It is preferred that Normally, this gap is set to 1 to 10 mm, but it is appropriately determined depending on the viscosity of the liquid.
【0030】フッ酸洗浄が終了後、N2ガスを槽内に供
給し、変位手段218により回転軸210を上方に移動
させて排出部209と回転軸の大径部211との間隙を
大きくして、フッ酸を落下させ外部に放出する。この場
合でも、フッ酸は液溜り部215の部分に溜まるため、
洗浄槽201及び排出管209の内部にごみ等が入り込
むことはない。After the hydrofluoric acid cleaning is completed, N 2 gas is supplied into the tank and the displacement means 218 moves the rotary shaft 210 upward to increase the gap between the discharge portion 209 and the large diameter portion 211 of the rotary shaft. Then, the hydrofluoric acid is dropped and released to the outside. Even in this case, since hydrofluoric acid accumulates in the liquid pool 215,
Dust and the like do not enter the inside of the cleaning tank 201 and the discharge pipe 209.
【0031】(b)超純水リンス洗浄 続いて、超純水供給管から超純水を槽内に供給して、フ
ッ酸洗浄と同様にして超純水リンス洗浄を行う。(B) Ultrapure water rinsing cleaning Next, ultrapure water is supplied from the ultrapure water supply pipe into the bath, and ultrapure water rinsing cleaning is performed in the same manner as hydrofluoric acid cleaning.
【0032】(c)IPA洗浄及び乾燥 IPA供給管からIPAを槽内に供給して、フッ酸洗浄
と同様にして洗浄を行う。その後、N2ガスを供給しな
がら赤外線ランプ206でウエハ208を加熱しながら
高速回転(1000〜3600rpm)させ、ウエハに
付着するIPAを除去し乾燥させる。この工程において
も、外部からごみの混入は防止されるため、ウエハは常
時清浄雰囲気内に保持される。従って、高清浄なウエハ
表面が保たれ、高い製造歩留まりを安定して得ることが
可能となる。(C) IPA Cleaning and Drying IPA is supplied from the IPA supply pipe into the tank and cleaning is carried out in the same manner as the hydrofluoric acid cleaning. Then, the wafer 208 is heated by the infrared lamp 206 while supplying N 2 gas and rotated at a high speed (1000 to 3600 rpm) to remove IPA adhering to the wafer and dry it. Also in this step, dust is prevented from entering from the outside, so the wafer is always kept in a clean atmosphere. Therefore, a highly clean wafer surface can be maintained, and a high manufacturing yield can be stably obtained.
【0033】なお、フッ酸等の無機系排液とIPA等の
有機系排液を別個の排液槽に排出する場合には、上記超
純水リンス洗浄後、排液用の配管216と接続した無機
系排液槽を有機系の排液槽に切り替えればよい。また、
各洗浄液を完全に分離するには、ドレン用配管219か
ら、液溜り部215に溜まった洗浄液を排出するように
すれば良い。When the inorganic drainage such as hydrofluoric acid and the organic drainage such as IPA are discharged to separate drainage tanks, after connection with the ultrapure water rinse, the drainage pipe 216 is connected. The inorganic drainage tank may be replaced with an organic drainage tank. Also,
In order to completely separate each cleaning liquid, the cleaning liquid accumulated in the liquid reservoir 215 may be discharged from the drain pipe 219.
【0034】また、洗浄液によっては、洗浄液を排液用
の配管216、ドレン用配管219からフィルター等を
介して供給管に戻す構造としても良い。Depending on the cleaning liquid, the cleaning liquid may be returned to the supply pipe from the drain pipe 216 and the drain pipe 219 via a filter or the like.
【0035】(実施態様例)以上は、フッ酸洗浄、超純
水リンス、IPA洗浄・乾燥工程を図2の装置で連続し
て行う例について述べたが、本発明の洗浄装置は、これ
らの場合に限らず、更に他の洗浄液を用いた工程を付加
することもできる。あるいは、例えばフッ酸洗浄・超純
水リンス用の装置とIPA洗浄・乾燥用の装置のように
1つの工程ごとに1つの装置を設け、これらの装置間で
基板を搬送する方法を採用しても良い。(Embodiment example) In the above, an example in which hydrofluoric acid cleaning, ultrapure water rinsing, and IPA cleaning / drying steps are continuously performed by the apparatus of FIG. 2 has been described. Not limited to the case, it is possible to add a step using another cleaning liquid. Alternatively, a method is adopted in which one device is provided for each process, such as a device for hydrofluoric acid cleaning / rinsing with ultrapure water and a device for IPA cleaning / drying, and the substrate is transferred between these devices. Is also good.
【0036】なお、本発明の洗浄装置は、例えば図2に
おいて回転軸又は排出部の角度を有する部分にOリング
等を組み込み回転軸を該Oリングに圧接させることによ
り、排液を完全に流さないようにすることができ、一般
の洗浄槽として使用することも可能である。In the cleaning apparatus of the present invention, for example, by inserting an O-ring or the like at the angled portion of the rotary shaft or the discharge part in FIG. 2 and bringing the rotary shaft into pressure contact with the O-ring, the drainage can be completely discharged. It can be omitted and can be used as a general cleaning tank.
【0037】また、本発明の洗浄装置は、洗浄液に基板
を浸漬して洗浄する方法に限らず、スプレー等基板表面
に洗浄液を噴射して洗浄する場合にも同様にして適用す
ることができる。この場合も、回転軸と排出部との間隙
の洗浄液及び/又は液溜まりに溜まる洗浄液自体によ
り、同様に摺動部からのごみの侵入は防止され、また洗
浄槽内を外気と遮断することができるので、高清浄雰囲
気内での洗浄が可能となる。The cleaning apparatus of the present invention is not limited to the method of immersing a substrate in a cleaning solution for cleaning, and can be similarly applied to the case of spraying a cleaning solution on the surface of a substrate by spraying. In this case as well, the cleaning liquid in the gap between the rotary shaft and the discharge part and / or the cleaning liquid itself stored in the liquid pool also prevents dust from entering from the sliding part, and also can block the inside of the cleaning tank from the outside air. As a result, cleaning can be performed in a highly clean atmosphere.
【0038】さらに、本発明においては、基板が洗浄液
に浸されていない時に、メガソニックの超音波を内在す
る洗浄液のジェット流を基板表面に吹き付けることによ
り洗浄を効果的に行うことができる。また、洗浄槽内に
紫外線ランプを配設し、基板表面に紫外線を照射して洗
浄液をラジカル活性化することにより、洗浄効果を一層
高めることができる。Further, in the present invention, when the substrate is not immersed in the cleaning liquid, the cleaning can be effectively performed by spraying a jet stream of the cleaning liquid containing megasonic ultrasonic waves on the substrate surface. Further, by providing an ultraviolet lamp in the cleaning tank and irradiating the surface of the substrate with ultraviolet rays to radically activate the cleaning liquid, the cleaning effect can be further enhanced.
【0039】以下に、本発明の主要構成要素をより詳細
に説明する。The main constituent elements of the present invention will be described in more detail below.
【0040】流量制御手段 図2に示す流量制御手段は、外径が所定の角度をもって
変化する大径部を有する回転軸と、これを軸方向に変位
させる変位手段とからなるが、本発明の流量制御手段は
これに限らず、回転軸は少なくとも2つの異なる外径を
有するものであれば良く、また、排出部もテーパー状で
なく、直管であっても良い。但し、回転軸の外径を多段
に変化させることにより、さらには連続に変化させるこ
とにより、幅広い粘性を有する種々の洗浄液に対しても
適用することができ、洗浄液選択の自由度が増大し、ま
た制御性も向上する。 Flow Rate Control Means The flow rate control means shown in FIG. 2 comprises a rotary shaft having a large diameter portion whose outer diameter changes at a predetermined angle, and displacement means for axially displacing the rotary shaft. The flow rate control means is not limited to this, and the rotary shaft may have at least two different outer diameters, and the discharge part may be a straight pipe instead of a tapered shape. However, by changing the outer diameter of the rotating shaft in multiple stages, and further by continuously changing it, it can be applied to various cleaning liquids having a wide range of viscosity, and the degree of freedom in selecting the cleaning liquid increases. Controllability is also improved.
【0041】また、変位手段は回転軸自体を移動させる
代わりに洗浄槽及び排出部を移動させても良い。回転軸
あるいは洗浄槽を移動させる変位手段としては、これら
を機械的に移動させるものでも良いし、あるいは、回転
軸の一部に永久磁石を配し、その周辺に配設したコイル
に電流を流し、磁界の相互作用により移動させても良
い。Further, the displacement means may move the cleaning tank and the discharge part instead of moving the rotating shaft itself. The displacement means for moving the rotary shaft or the cleaning tank may be those that move them mechanically, or a permanent magnet may be arranged on a part of the rotary shaft and a current may be applied to a coil arranged around the permanent magnet. , May be moved by interaction of magnetic fields.
【0042】本発明の流量制御手段としては、以上の
他、流量を調節できるものであればどの様なものでもよ
く、例えばカメラの絞りがごとく内径を連続的又は段階
的に変化させることができる部材を用い、これを排出部
あるいは洗浄槽の底面開口部等に設けても良い。In addition to the above, the flow rate control means of the present invention may be of any type as long as the flow rate can be adjusted. For example, the inner diameter can be changed continuously or stepwise like the diaphragm of a camera. A member may be used and this may be provided at the discharge part or the bottom opening of the cleaning tank.
【0043】好ましい流量制御手段の一態様としては、
図3に示すように、回転軸107にに螺旋状フィン30
1を配設したものが挙げられる。これにより、回転軸の
回転速度を変化させることにより排液量を制御すること
ができ、また逆方向に回転することにより排液を強制的
に排出することができる。図3の例では、螺旋状フィン
を設けた例を示したが、これに限らず、回転軸又は排出
部に凹凸、溝等を設けてもよいし、回転速度又は回転方
向により流量を調整できるものであれば、特に螺旋状に
限る必要はない。As one mode of a preferable flow rate control means,
As shown in FIG. 3, the spiral fin 30 is attached to the rotary shaft 107.
1 may be used. Thus, the amount of drainage can be controlled by changing the rotation speed of the rotary shaft, and the drainage can be forcibly discharged by rotating in the opposite direction. Although the example in which the spiral fin is provided is shown in the example of FIG. 3, the present invention is not limited to this, and irregularities, grooves, or the like may be provided on the rotary shaft or the discharge portion, and the flow rate can be adjusted by the rotation speed or the rotation direction. If it is a thing, it does not need to be limited to a spiral shape.
【0044】また、図3の方式を用いれば、上記変位手
段等は不要となるが、併用しても良いことはいうまでも
ない。なお、図3においては、受け容器108に溜まる
液は、前述したように排出パイプ302を通って環状の
排液受け溝303に排出させる構造となっているが、図
4、6の構造としても良いことはいうまでもない。Further, if the method of FIG. 3 is used, the above-mentioned displacement means and the like are unnecessary, but it goes without saying that they may be used in combination. In FIG. 3, the liquid accumulated in the receiving container 108 is discharged to the annular drain receiving groove 303 through the drain pipe 302 as described above, but the structure of FIGS. Not to mention good things.
【0045】外気遮断手段 図2に示した構造により軸受け周辺の外気から洗浄槽内
を遮断することができるが、この他に、例えば図4に示
すように、図2の円筒体213を上下に逆さまに配置
し、この円筒体401の内径を排出部(排出管)209
の外径よりも大きくし、その軸方向で円筒体が排出管2
09と重なりを有する構成としても良い。この構成で
は、円筒体401に溜まる洗浄液により洗浄槽201内
を常に外気と遮断することができる。Outside air shut-off means The structure shown in FIG. 2 can shut off the inside of the cleaning tank from the outside air around the bearing. In addition to this, for example, as shown in FIG. 4, the cylindrical body 213 in FIG. It is arranged upside down, and the inner diameter of this cylindrical body 401 is set to the discharge portion (discharge pipe) 209.
Larger than the outside diameter of the discharge pipe 2
09 may be overlapped. With this configuration, the cleaning liquid accumulated in the cylindrical body 401 can always shut off the inside of the cleaning tank 201 from the outside air.
【0046】円筒体401から溢流する洗浄液は、洗浄
槽等に固定した容器402で受け、配管403により外
部に排出される。この場合、洗浄液が円筒体401の底
面を伝って軸受け220側に落ちるのを防ぐために、底
面に更に第2の円筒体404を設けるのが好ましい。The cleaning liquid overflowing from the cylindrical body 401 is received by a container 402 fixed to a cleaning tank or the like, and is discharged to the outside by a pipe 403. In this case, it is preferable to further provide the second cylindrical body 404 on the bottom surface in order to prevent the cleaning liquid from traveling along the bottom surface of the cylindrical body 401 and dropping to the bearing 220 side.
【0047】また、円筒体401に溜まる洗浄液を溢流
させずに、図6に示すように、回転軸の内部を中空と
し、円筒体に溜まる洗浄液をこの中空部を通って回転軸
下部から排出させる構造としても良く、その場合回転軸
下部にバルブを設けて排出する流量を調節できる構造と
しても良い。Further, as shown in FIG. 6, the inside of the rotating shaft is made hollow without letting the cleaning liquid accumulated in the cylindrical body 401 overflow, and the cleaning liquid accumulated in the cylindrical body is discharged from the lower part of the rotating shaft through this hollow portion. Alternatively, a valve may be provided below the rotating shaft to adjust the flow rate of the discharged gas.
【0048】洗浄槽 本発明においては、洗浄槽201内に、保持部材207
を囲むようにその下端が洗浄槽の底面に固定された仕切
板を設けるのが好ましい。仕切板を設け、供給する洗浄
液の一部を溢流させて洗浄槽外部に取り出すことによ
り、比較的重いごみは、前述した排出部209と回転軸
211の間隙を通って下方に流れる洗浄液とともに外部
に放出され、軽いごみはこの仕切板を溢流する洗浄液と
ともに外部へ放出することができ、ごみの除去効果は一
層向上する。また、この仕切板からの溢流する洗浄液
は、フィルターを通した後、再び洗浄液供給管に戻すこ
とにより洗浄液の使用量を節減することができる。 Cleaning Tank In the present invention, the holding member 207 is provided in the cleaning tank 201.
It is preferable to provide a partition plate whose lower end is fixed to the bottom surface of the cleaning tank so as to surround the. By providing a partition plate and overflowing a part of the supplied cleaning liquid to the outside of the cleaning tank, relatively heavy dust is discharged to the outside together with the cleaning liquid flowing downward through the gap between the discharge unit 209 and the rotating shaft 211 described above. The light dust discharged to the outside can be discharged to the outside together with the cleaning liquid overflowing the partition plate, and the dust removing effect is further improved. Further, the cleaning liquid overflowing from the partition plate is passed through a filter and then returned to the cleaning liquid supply pipe again, whereby the amount of the cleaning liquid used can be reduced.
【0049】また、洗浄槽の底面は、排出部開口に向か
って下方に傾斜させるのが好ましい。これにより、ごみ
等が速やかに排出部開口に流れ、その排出がより効率的
になる。Further, it is preferable that the bottom surface of the cleaning tank is inclined downward toward the discharge opening. As a result, dust and the like quickly flow to the opening of the discharge portion, and the discharge becomes more efficient.
【0050】保持部材 図2では枚葉式の洗浄乾燥装置について説明したが、本
発明の万能型洗浄装置は多数枚を一度に洗浄することも
可能である。その一例を図5に示す。図5は、6個のウ
エハカセットを配置した保持部材の(a)概略平面図及
び(b)概略断面図である。 Holding Member In FIG. 2, a single-wafer cleaning / drying apparatus has been described, but the universal cleaning apparatus of the present invention can also clean a large number of sheets at once. An example is shown in FIG. FIG. 5 is (a) a schematic plan view and (b) a schematic sectional view of a holding member in which six wafer cassettes are arranged.
【0051】保持部材は、回転軸501に固定された円
盤502とウエハ504を収納したウエハカセット50
5の保持部503とからなる。The holding member is a wafer cassette 50 containing a disk 502 fixed to a rotary shaft 501 and a wafer 504.
5 holding portions 503.
【0052】図4に示すように、ウエハ収納カセット5
05を保持部503に嵌着等して取り付けし、枚葉式の
場合と同様にして洗浄液を供給し、回転洗浄する。ウエ
ハ面が水平に配置されるため、回転の遠心力により高い
洗浄効果が得られる。As shown in FIG. 4, the wafer storage cassette 5
05 is attached to the holding portion 503 by fitting or the like, and the cleaning liquid is supplied in the same manner as in the single-wafer type, and rotation cleaning is performed. Since the wafer surface is arranged horizontally, a high cleaning effect can be obtained by the centrifugal force of rotation.
【0053】なお、カセットの取り付けは、枚葉式の場
合と同様に搬送機構により、搬出入され、保持部に装着
・脱着するのが好ましい。It should be noted that the cassette is preferably mounted and unloaded by the transport mechanism and mounted / removed in / from the holding portion as in the case of the single-wafer type.
【0054】加熱手段 加熱手段としては、基板を赤外線ランプ等で加熱するほ
か、保持部材に電熱ヒータ等を設けて直接加熱しても良
く、あるいは加熱した不活性ガス等を基板に吹き付ける
ものでも良い。 Heating means As the heating means, in addition to heating the substrate with an infrared lamp or the like, an electric heater or the like may be provided on the holding member to directly heat it, or a heated inert gas or the like may be blown onto the substrate. .
【0055】材質その他 回転軸や槽の内壁、保持部材等、洗浄液と接する部材の
材質としては、洗浄液に侵されず、且つ不純物等を発生
しないものが用いられる。例えば、石英やステンレス等
にシリコンゴム、ポリエチレンをコートし、更にテフロ
ンをコートしたものが好適に用いられる。これらを用い
ることにより、フッ酸、H2SO4−H2O2、NH4OH
−H2O2のような腐食性の高い洗浄液を用いた洗浄を行
うことも可能となる。As the material of the members such as the rotating shaft, the inner wall of the tank, and the holding member that come into contact with the cleaning liquid, those which are not corroded by the cleaning liquid and generate no impurities or the like are used. For example, quartz or stainless steel coated with silicon rubber or polyethylene and further coated with Teflon is preferably used. By using these, hydrofluoric acid, H 2 SO 4 -H 2 O 2, NH 4 OH
It is possible to perform cleaning with highly corrosive cleaning solution, such as -H 2 O 2.
【0056】また、回転軸は直接モータ等の回転駆動源
に固定して回転しても良いし、また歯車・ベルトを介し
て回転しても良い。The rotary shaft may be directly fixed to a rotary drive source such as a motor to rotate, or may be rotated via a gear or belt.
【0057】[0057]
【発明の効果】請求項1の発明により、回転摺動部から
の発塵の問題を回避することが可能となる。また、請求
項2〜6の発明により、洗浄工程中における、外部から
ごみ・不純物の混入防止効果は一層向上し、集積回路の
より高集積化・高性能化が可能となるとともに、製造歩
留まりを向上させることが可能となる。According to the invention of claim 1, it is possible to avoid the problem of dust generation from the rotary sliding portion. Further, according to the inventions of claims 2 to 6, the effect of preventing dust and impurities from being mixed in from the outside during the cleaning step is further improved, and higher integration and higher performance of the integrated circuit can be achieved, and the manufacturing yield is improved. It is possible to improve.
【0058】請求項7、8の発明により、排出される洗
浄液の管理が容易となり、また装置の小型化が達成可能
となる。According to the seventh and eighth aspects of the present invention, the cleaning liquid discharged can be easily managed, and the apparatus can be downsized.
【0059】請求項9の発明により、洗浄工程中に被洗
浄物の表面は外気の影響を受けることなく、清浄な表面
を維持することが可能となる。その結果、集積回路のよ
り高性能化が達成可能となる。According to the ninth aspect of the present invention, the surface of the object to be cleaned can be kept clean without being affected by the outside air during the cleaning step. As a result, higher performance of the integrated circuit can be achieved.
【0060】さらに、請求項10の発明により、一度に
多数の基板等を処理することが可能となり、生産効率、
洗浄液使用量の削減等製造コストの低減を図ることがで
きる。Further, according to the invention of claim 10, it becomes possible to process a large number of substrates and the like at a time.
It is possible to reduce the manufacturing cost by reducing the amount of cleaning liquid used.
【0061】本発明は、半導体基板やフォトマスク等に
限らず、あらゆる精密洗浄に適用可能であり、例えば大
気と接触すると酸化してしまうような金属の洗浄等にも
好適に適用できる。The present invention is applicable not only to semiconductor substrates, photomasks and the like, but also to any precision cleaning, and for example, it is also suitable for cleaning metals that are oxidized when contacted with the atmosphere.
【図1】本発明の洗浄装置の概念を説明する概念図であ
る。FIG. 1 is a conceptual diagram illustrating the concept of a cleaning device of the present invention.
【図2】本発明の洗浄装置の一例を示す概念図である。FIG. 2 is a conceptual diagram showing an example of a cleaning device of the present invention.
【図3】本発明の洗浄装置の他の例を示す概念図であ
る。FIG. 3 is a conceptual diagram showing another example of the cleaning apparatus of the present invention.
【図4】本発明の外気遮断手段の他の例を示す概念図で
ある。FIG. 4 is a conceptual diagram showing another example of the outside air blocking means of the present invention.
【図5】本発明の保持部材の一例を示す概念図である。FIG. 5 is a conceptual diagram showing an example of a holding member of the present invention.
【図6】本発明の洗浄装置の他の例を示す概念図であ
る。FIG. 6 is a conceptual diagram showing another example of the cleaning device of the present invention.
101 洗浄槽、 102 蓋、 103 洗浄液供給管、 104 回転保持部材、 105 半導体基板、 106 排出部(排出管)、 107 回転軸、 108 排出液の受け容器、 109 モータ、 110 回転軸の大径部、 201 洗浄槽、 202 蓋、 203 複数の洗浄液供給管、 204 不活性ガス供給管、 205 メガソニックの超音波振動子、 206 半導体基板加熱用の赤外線ランプ、 207 回転保持部材、 208 半導体基板、 209 排出部、 210 回転軸、 211 大径部、 212 外気遮断手段、 213 円筒体、 214 ドレン用バルブ、 215 液溜まり部、 216 液面保持配管、 217 モータ、 218 変位手段、 219 ドレン用配管、 220 軸受け、 221 モータ支持体、 222 ハウジング、 301 螺旋状フィン、 302 排出パイプ、 303 環状排液受け溝、 401 円筒体、 402 容器、 403 配管、 404 こぼれ落ち防止円筒体、 501 回転軸、 502 円盤、 503 カセット保持部、 504 ウエハ、 505 ウエハカセット 601 排出口、 602 中空部、 603 バルブ。 101 cleaning tank, 102 lid, 103 cleaning liquid supply pipe, 104 rotation holding member, 105 semiconductor substrate, 106 discharge part (discharge pipe), 107 rotating shaft, 108 discharge liquid receiving container, 109 motor, 110 large diameter part of rotating shaft , 201 cleaning tank, 202 lid, 203 plural cleaning liquid supply pipes, 204 inert gas supply pipe, 205 megasonic ultrasonic vibrator, 206 infrared lamp for heating semiconductor substrate, 207 rotation holding member, 208 semiconductor substrate, 209 Discharge part, 210 rotary shaft, 211 large diameter part, 212 outside air shutoff means, 213 cylindrical body, 214 drain valve, 215 liquid pool part, 216 liquid level holding pipe, 217 motor, 218 displacement means, 219 drain pipe, 220 Bearing, 221 motor support, 222 housing, 301 spiral fin, 02 drain pipe, 303 annular drainage receiving groove, 401 cylindrical body, 402 container, 403 piping, 404 spill-preventing cylindrical body, 501 rotating shaft, 502 disc, 503 cassette holding part, 504 wafer, 505 wafer cassette 601 outlet, 602 Hollow part, 603 valve.
Claims (10)
槽の内部に、被洗浄物の保持部材が回転軸に連結されて
配置され、前記被洗浄物を回転しながら洗浄及び/又は
乾燥する洗浄装置であって、前記回転軸が前記排出部を
貫通することを特徴とする万能型洗浄装置。1. A holding member for an object to be cleaned is disposed inside a cleaning tank having a supply part and a discharge part for the cleaning liquid, the member being connected to a rotating shaft, and the cleaning target is cleaned and / or dried while rotating. A cleaning device, wherein the rotating shaft penetrates the discharge part.
を調節する流量制御手段を有することを特徴とする請求
項1に記載の万能型洗浄装置。2. The universal cleaning apparatus according to claim 1, further comprising flow rate control means for adjusting a flow rate of the cleaning liquid discharged from the discharge part.
排出部との間隙を変化させて排出流量を調節することを
特徴とする請求項2に記載の万能型洗浄装置。3. The universal cleaning apparatus according to claim 2, wherein the flow rate control means adjusts the discharge flow rate by changing the gap between the rotary shaft and the discharge part.
異なる外径を有する前記回転軸と、前記排出部と前記回
転軸との軸方向の相対位置を変位させる変位手段とから
なることを特徴とする請求項3に記載の万能型洗浄装
置。4. The flow rate control means comprises: the rotary shaft having at least two different outer diameters; and a displacement means for displacing the relative position in the axial direction between the discharge part and the rotary shaft. The universal cleaning device according to claim 3.
る回転軸は、その外径が所定の角度をもって変化する部
分を1又は2以上有し、前記排出部はその内径が所定の
角度をもって変化する部分を1又は2以上有することを
特徴とする請求項4に記載の万能型洗浄装置。5. The rotating shaft having at least two different outer diameters has at least one portion whose outer diameter changes at a predetermined angle, and the discharge portion has an inner diameter changing at a predetermined angle. The universal cleaning apparatus according to claim 4, wherein the universal cleaning apparatus has one or more parts.
出部に凹凸、フィン、又は溝を配設し、前記回転軸の回
転方向及び/又は回転速度により流量を調節することを
特徴とする請求項2〜5のいずれか1項に記載の万能型
洗浄装置。6. The flow rate control means is characterized in that unevenness, fins, or grooves are provided on the rotary shaft or the discharge part, and the flow rate is adjusted by the rotation direction and / or the rotation speed of the rotary shaft. The universal cleaning apparatus according to any one of claims 2 to 5.
洗浄液を受けるための容器を配設したことを特徴とする
請求項1〜6のいずれか1項に記載の万能型洗浄装置。7. The universal cleaning apparatus according to claim 1, wherein a container for receiving the cleaning liquid discharged from the discharging portion is arranged on the rotary shaft.
を通してその下部から排出するように前記回転軸の少な
くとも一部を中空にしたことを特徴とする請求項7に記
載の万能型洗浄装置。8. The universal cleaning apparatus according to claim 7, wherein at least a part of the rotary shaft is hollow so that the cleaning liquid accumulated in the container is passed through the rotary shaft and discharged from a lower portion thereof.
より前記洗浄槽内部を外気から遮断する外気遮断手段を
設けたことを特徴とする請求項1〜8のいずれか1項に
記載の万能型洗浄装置。9. The universal type according to claim 1, further comprising an outside air shutoff means for shutting off the inside of the washing tank from the outside air by the washing liquid itself discharged from the discharge part. Cleaning device.
持部材であって、低速又は中速回転にて洗浄を行い、高
速回転により遠心力を用いて乾燥させることが可能とし
たことを特徴とする請求項1〜9のいずれか1項に記載
の万能型洗浄装置。10. The holding member is a holding member for a substrate storage cassette, and is characterized in that cleaning can be performed at low or medium speed rotation and drying can be performed using centrifugal force at high speed rotation. The universal cleaning apparatus according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32475795A JPH09162152A (en) | 1995-12-13 | 1995-12-13 | Versatile cleaner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32475795A JPH09162152A (en) | 1995-12-13 | 1995-12-13 | Versatile cleaner |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006257438A Division JP2007027784A (en) | 2006-09-22 | 2006-09-22 | Versatile cleaner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09162152A true JPH09162152A (en) | 1997-06-20 |
Family
ID=18169345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32475795A Pending JPH09162152A (en) | 1995-12-13 | 1995-12-13 | Versatile cleaner |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09162152A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100422911B1 (en) * | 2001-05-04 | 2004-03-12 | 아남반도체 주식회사 | Spin type wet cleaning device |
| WO2006046657A1 (en) * | 2004-10-28 | 2006-05-04 | Tokyo Electron Limited | Liquid processing apparatus |
| WO2011083744A1 (en) * | 2010-01-08 | 2011-07-14 | オムロンヘルスケア株式会社 | Thin plate member cleaning device |
| US8656935B2 (en) | 2010-01-08 | 2014-02-25 | Omron Healthcare Co., Ltd. | Thin plate member washing apparatus |
| JP2016055275A (en) * | 2014-09-12 | 2016-04-21 | 森合精機株式会社 | Cleaning device |
-
1995
- 1995-12-13 JP JP32475795A patent/JPH09162152A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100422911B1 (en) * | 2001-05-04 | 2004-03-12 | 아남반도체 주식회사 | Spin type wet cleaning device |
| WO2006046657A1 (en) * | 2004-10-28 | 2006-05-04 | Tokyo Electron Limited | Liquid processing apparatus |
| JPWO2006046657A1 (en) * | 2004-10-28 | 2008-05-22 | 東京エレクトロン株式会社 | Liquid processing equipment |
| JP4486649B2 (en) * | 2004-10-28 | 2010-06-23 | 東京エレクトロン株式会社 | Liquid processing equipment |
| US8201567B2 (en) | 2004-10-28 | 2012-06-19 | Tokyo Electron Limited | Liquid treating apparatus |
| WO2011083744A1 (en) * | 2010-01-08 | 2011-07-14 | オムロンヘルスケア株式会社 | Thin plate member cleaning device |
| US8656935B2 (en) | 2010-01-08 | 2014-02-25 | Omron Healthcare Co., Ltd. | Thin plate member washing apparatus |
| JP2016055275A (en) * | 2014-09-12 | 2016-04-21 | 森合精機株式会社 | Cleaning device |
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