JPH09162154A - Substrate treating system - Google Patents

Substrate treating system

Info

Publication number
JPH09162154A
JPH09162154A JP32004295A JP32004295A JPH09162154A JP H09162154 A JPH09162154 A JP H09162154A JP 32004295 A JP32004295 A JP 32004295A JP 32004295 A JP32004295 A JP 32004295A JP H09162154 A JPH09162154 A JP H09162154A
Authority
JP
Japan
Prior art keywords
solvent
vapor
container
cleaning
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32004295A
Other languages
Japanese (ja)
Inventor
Takamasa Sakai
高正 坂井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP32004295A priority Critical patent/JPH09162154A/en
Publication of JPH09162154A publication Critical patent/JPH09162154A/en
Pending legal-status Critical Current

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  • Drying Of Solid Materials (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To enhance the steam cleaning/drying performance by enhancing the circulation efficiency of phase conversion, i.e., boiling, evaporation and condensation, of a cleaning solvent. SOLUTION: A container 2 is provided, on the upper surface thereof, with an opening/closing cover body 3 equipped with a heater 6, at the lower part of bottom face and on the outer circumferential part of side face 21 thereof, with heaters 4, 5 and, at the upper part of inner side face thereof, with a cooling pipe 81 and a pressure reduction port P2. The pressure reduction port P2 is coupled with a pressure reducing section 9 and a solvent Q, contained in the enclosed container 2, is heated by means of the heater 4 under reduced pressure and boiled. On the other hand, it is cooled by means of a cooling pipe 81 and the vapor of solvent convects in a cleaning/drying chamber. The side face 21 of container and the cover body 3 are heated by means of the heaters 5, 6 and condensation of vapor is prevented thereat thus realizing ideal convection of vapor. A wafer 15 is exposed to the convection of vapor and the solvent is condensed on the surface thereof. The wafer 15 is cleaned with the condensed droplet and dried with latent heat generated at the time of condensation.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、溶媒の蒸気を用い
て半導体ウエハ等の基板の洗浄及び乾燥を行う基板処理
装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer by using a solvent vapor.

【0002】[0002]

【従来の技術】図6は、従来の蒸気乾燥装置の構成を示
す概略図である。同図に示す蒸気乾燥装置100は、乾
燥室を構成する容器101、この容器101内に収納さ
れる、例えばトリクレン、イソプロピールアルコール
(IPA)等の液体の有機溶媒102、この有機溶媒1
02を気化させるための加熱ヒータ103及び有機溶媒
102の蒸気を液化する冷却パイプ104を備えてい
る。冷却パイプ104は容器101の内側面上部に配設
され、上昇した有機溶媒102の蒸気を冷却して霧状に
液化し、下降させるものである。
2. Description of the Related Art FIG. 6 is a schematic diagram showing the structure of a conventional steam dryer. A vapor drying apparatus 100 shown in the figure includes a container 101 that constitutes a drying chamber, a liquid organic solvent 102 such as trichlene, isopropyl alcohol (IPA), etc. housed in the container 101, and the organic solvent 1.
A heater 103 for vaporizing 02 and a cooling pipe 104 for liquefying the vapor of the organic solvent 102 are provided. The cooling pipe 104 is disposed above the inner side surface of the container 101, and cools the vapor of the organic solvent 102 that has risen to liquefy it in a mist state and lower it.

【0003】蒸気乾燥装置100では容器101内の略
中央にウエハ105が縦向け(ウエハ周縁が略垂直面内
となる方向)に配置され、加熱ヒータ103により常圧
下で有機溶媒102を沸点以上に加熱して洗浄及び乾燥
が行われる。
In the vapor drying apparatus 100, a wafer 105 is vertically oriented (in a direction in which a wafer peripheral edge is in a substantially vertical plane) in a substantially center of a container 101, and a heater 103 heats the organic solvent 102 to a boiling point or more under normal pressure. Washing and drying are performed by heating.

【0004】すなわち、液体の有機溶媒102を沸騰さ
せて蒸気に変換し、その蒸気が上昇すると、一部がウエ
ハ105の表面に凝集する。凝集した有機溶媒102の
液滴はウエハ105の表面に沿って流れ、これによりウ
エハ105の表面の洗浄が行われる。また、有機溶媒1
02の凝集による潜熱がウエハ105に付与され、これ
によりウエハ105が加熱されて乾燥が行われる。な
お、ウエハ105の表面を流下した有機溶媒104の液
滴は容器101の底部に落下し、液体の有機溶媒102
に還元される。
That is, when the liquid organic solvent 102 is boiled and converted into vapor, and the vapor rises, a part of the vapor is condensed on the surface of the wafer 105. The condensed droplets of the organic solvent 102 flow along the surface of the wafer 105, whereby the surface of the wafer 105 is cleaned. In addition, organic solvent 1
Latent heat due to the aggregation of 02 is applied to the wafer 105, whereby the wafer 105 is heated and dried. The droplets of the organic solvent 104 flowing down on the surface of the wafer 105 drop to the bottom of the container 101, and the liquid organic solvent 102 is discharged.
Is reduced to

【0005】一方、ウエハ105の表面で凝集しなかっ
た有機溶媒102の蒸気は、ウエハ105より上方に上
昇し、冷却パイプ104により冷却されて霧状の液体と
なり、その一部は下降気流となって下降する一方、残り
は容器101の内側面に凝集し、この内側面を流下して
容器底部の有機溶媒102に戻される。
On the other hand, the vapor of the organic solvent 102 that has not aggregated on the surface of the wafer 105 rises above the wafer 105 and is cooled by the cooling pipe 104 to become a mist-like liquid, part of which becomes a descending air stream. While the other part of the container 101 descends, the rest is condensed on the inner surface of the container 101, flows down on the inner surface, and is returned to the organic solvent 102 at the bottom of the container.

【0006】上記のように、容器101内には有機溶媒
102の蒸気の対流と加熱により補充された有機溶媒1
02の蒸気の上昇気流とが生じ、この蒸気中にウエハ1
05を曝してウエハ105の表面に凝集された有機溶媒
102の液滴の流下と潜熱による加熱とによりウエハ1
05の洗浄と乾燥とが同時に行われる。
As described above, the organic solvent 1 is replenished in the container 101 by convection of vapor of the organic solvent 102 and heating.
No. 02 vapor ascending air current is generated, and the wafer 1
Of the organic solvent 102 aggregated on the surface of the wafer 105 by exposing the wafer 05 and heating by latent heat.
The cleaning and drying of 05 are performed simultaneously.

【0007】また、特開昭63−10528号公報に
は、蒸気乾燥方法において、減圧下で有機溶媒を低温沸
騰により蒸気化させる方法が示されている。この乾燥方
法は、低温沸騰により有機溶媒を蒸気化することで必要
以上の蒸気発生を抑制し、有機溶媒の爆発等の危険性を
低減するようにしたものである。
Further, Japanese Patent Laid-Open No. 63-10528 discloses a vapor drying method in which an organic solvent is vaporized by low temperature boiling under reduced pressure. In this drying method, the organic solvent is vaporized by boiling at a low temperature to suppress unnecessary vapor generation and reduce the risk of explosion of the organic solvent.

【0008】[0008]

【発明が解決しようとする課題】上記従来の蒸気乾燥装
置は、溶媒102を加熱沸騰させ、溶媒102の蒸発及
び凝集の相変換の循環中にウエハ105を曝すことによ
り洗浄、乾燥を促進するものであるが、常圧下で有機溶
媒102の蒸気化を行っているので、溶媒102の相変
換の循環効率を考慮すると、実質的にトリクレン等の比
較的低沸点を有する有機溶媒しか利用されていない。
The conventional vapor drying apparatus described above promotes cleaning and drying by heating and boiling the solvent 102 and exposing the wafer 105 to the circulation of the phase conversion of evaporation and aggregation of the solvent 102. However, since the organic solvent 102 is vaporized under normal pressure, only the organic solvent having a relatively low boiling point such as trichlene is substantially used in consideration of the circulation efficiency of the phase conversion of the solvent 102. .

【0009】しかし、上記有機溶媒は引火性が強く、危
険性が非常に高いので、好ましくは危険性の少ない純水
を用いる方がよい。従来装置においても溶媒として純水
を利用することは可能であるが、純水は沸点が高く、加
熱エネルギーが大きい割には相変換の循環を効率よく行
うことが困難で、従来の蒸気乾燥装置には適用し難かっ
た。
However, since the above organic solvent is highly flammable and extremely dangerous, it is preferable to use pure water which is less dangerous. Although it is possible to use pure water as a solvent in the conventional apparatus, it is difficult to efficiently circulate the phase conversion despite the high boiling point of pure water and the large heating energy. Was difficult to apply to.

【0010】一方、特開昭63−10528号公報の乾
燥方法は水滴の付着しているウエハ表面に有機物の膜を
形成して水滴除去の容易化を図るもので、溶媒の蒸発及
び凝集の相変換を利用してウエハの洗浄と乾燥とを同時
に行うものではない。このため、同公報には低圧沸騰に
より有機溶媒を蒸気化することは示されているが、単に
有機溶媒を低圧沸騰させるだけでは溶媒の蒸発及び凝集
の相変換の循環を効率よく行わせることは困難で、同公
報の乾燥方法によりウエハの洗浄と乾燥とを同時に行う
ことは極めて困難である。
On the other hand, the drying method disclosed in Japanese Patent Laid-Open No. 63-10528 is intended to facilitate the removal of water droplets by forming a film of an organic substance on the surface of the wafer to which the water droplets are attached. Wafer cleaning and drying are not performed simultaneously using conversion. Therefore, in the same publication, it is shown that the organic solvent is vaporized by low-pressure boiling, but simply by low-pressure boiling the organic solvent, it is possible to efficiently perform the circulation of the phase conversion of evaporation and aggregation of the solvent. It is difficult, and it is extremely difficult to simultaneously wash and dry the wafer by the drying method disclosed in the publication.

【0011】本発明は、上記課題に鑑みてなされたもの
であり、溶媒の相変換の循環効率を高め、基板の洗浄及
び乾燥を効果的に行うことのできる基板処理装置を提供
するものである。
The present invention has been made in view of the above problems, and provides a substrate processing apparatus capable of enhancing the circulation efficiency of phase conversion of a solvent and effectively cleaning and drying a substrate. .

【0012】[0012]

【課題を解決するための手段】本発明は、溶媒の蒸気を
基板表面に凝集させ、その溶媒の液滴の流下により上記
基板を洗浄するとともに、凝集による潜熱により上記基
板の乾燥を行う基板処理装置であって、液体の上記溶媒
と上記基板とが収納される密閉容器と、上記密閉容器内
の圧力を減圧する減圧手段と、液体の上記容媒を加熱
し、上記溶媒を蒸発させる第1の加熱手段と、上記密閉
容器の側面部の上記基板の収納位置より上方位置に設け
られ、上記溶媒の蒸気を冷却する冷却手段と備えたもの
である(請求項1)。
According to the present invention, a substrate treatment is carried out in which vapor of a solvent is aggregated on a surface of a substrate, the substrate is washed by flowing droplets of the solvent, and latent heat of the aggregation is used to dry the substrate. An apparatus comprising: a closed container in which the liquid solvent and the substrate are housed; a decompression means for reducing the pressure in the closed container; and a liquid medium for heating the solvent to evaporate the solvent. And heating means for cooling the vapor of the solvent, which is provided at a position above the storage position of the substrate on the side surface of the closed container (claim 1).

【0013】上記構成によれば、容媒と基板とが収納さ
れている密閉容器を減圧手段で所定の減圧状態にしつ
つ、液体の容媒を第1の加熱手段で加熱することにより
基板の洗浄及び加熱が行われる。液体の容媒が加熱さ
れ、溶媒の温度が減圧下での沸点に上昇すると、溶媒が
蒸発し、その蒸気が上昇する。溶媒の蒸気の一部は基板
表面に接触し、この基板に冷却されて凝集する。凝集し
た溶媒の液滴は基板表面を流下して容器底面部に落下す
るが、この溶媒の液滴の流下により基板表面が洗浄され
る。また、基板は溶媒の蒸気が凝集による潜熱により加
熱され、これにより基板の乾燥が行われる。
According to the above construction, the substrate is cleaned by heating the liquid medium by the first heating means while the pressure-reducing means brings the closed container containing the medium and the substrate into a predetermined decompressed state. And heating is performed. When the liquid medium is heated and the temperature of the solvent rises to the boiling point under reduced pressure, the solvent evaporates and the vapor rises. A part of the solvent vapor comes into contact with the surface of the substrate and is cooled by the substrate and aggregates. The aggregated droplets of the solvent flow down on the substrate surface and drop to the bottom surface of the container, but the substrate surface is washed by the downward flow of the solvent droplets. Further, the substrate is heated by the latent heat of the solvent vapor, which causes the substrate to be dried.

【0014】一方、基板の洗浄及び乾燥に利用されなか
った溶媒の蒸気は、基板の収納位置より上方に上昇する
が、冷却手段により冷却されて霧状の液体となるので、
その冷却位置から下降し、容器底面部の液状の溶媒に還
元される。そして、上述した溶媒の蒸発及び凝集の相変
換の循環により基板が減圧下での溶媒の沸点まで上昇す
ると、液化された溶媒の基板表面での凝集が停止し、洗
浄及び乾燥処理は終了する。
On the other hand, the vapor of the solvent not used for cleaning and drying the substrate rises above the storage position of the substrate, but is cooled by the cooling means to become a mist-like liquid.
It descends from the cooling position and is reduced to the liquid solvent on the bottom of the container. Then, when the substrate rises to the boiling point of the solvent under reduced pressure by the circulation of the phase conversion of the evaporation and aggregation of the solvent described above, the aggregation of the liquefied solvent on the substrate surface is stopped, and the cleaning and drying process is completed.

【0015】また、本発明は、上記基板処理装置におい
て、上記密閉容器の天井面を傾斜させたものである(請
求項2)。
Further, according to the present invention, in the substrate processing apparatus, the ceiling surface of the closed container is inclined (claim 2).

【0016】上記構成により、密閉容器の天井面に達し
た溶媒の蒸気は、その天井面で結露し、その液滴は自重
により落下若しくは天井面に沿って流下するが、密閉容
器の天井面は傾斜しているので、天井面で結露した溶媒
の液滴は天井面に沿って流下し、液滴の基板への落下が
阻止される。
With the above structure, the vapor of the solvent reaching the ceiling surface of the closed container is condensed on the ceiling surface, and the droplets drop by its own weight or flow down along the ceiling surface. Since it is inclined, the droplets of the solvent that have condensed on the ceiling surface flow down along the ceiling surface and are prevented from falling onto the substrate.

【0017】また、本発明は、上記基板処理装置におい
て、上記密閉容器の側面略中央部を加熱する第2の加熱
手段を備えたものである(請求項3)。上記構成によれ
ば、第2の加熱手段により容器側面部を減圧下での溶媒
の沸点以上に加熱することにより、霧状の液体となった
溶媒の容器の側面略中央部への付着及びこの容器側面部
からの容器底面部への還元が抑制され、容器内で溶媒の
蒸気が効率よく対流する。
Further, according to the present invention, in the above substrate processing apparatus, there is provided a second heating means for heating a substantially central portion of a side surface of the closed container (claim 3). According to the above configuration, by heating the side surface of the container to a temperature equal to or higher than the boiling point of the solvent under reduced pressure by the second heating means, the solvent in the form of atomized liquid adheres to the substantially central part of the side surface of the container and The reduction from the side surface of the container to the bottom surface of the container is suppressed, and the vapor of the solvent efficiently convects inside the container.

【0018】また、本発明は、上記基板処理装置におい
て、上記密閉容器の天井部を加熱する第3の加熱手段を
備えたものである(請求項4)。上記構成によれば、第
3の加熱手段により容器天井部を減圧下での溶媒の沸点
以上に加熱することにより天井部まで上昇した溶媒の蒸
気の天井面での凝集が防止される。
Further, the present invention provides the substrate processing apparatus, further comprising a third heating means for heating the ceiling portion of the closed container (claim 4). According to the above configuration, the third heating means heats the ceiling of the container to a temperature equal to or higher than the boiling point of the solvent under reduced pressure, thereby preventing vaporization of the solvent vapor that has risen to the ceiling on the ceiling surface.

【0019】また、本発明は、上記溶媒を純水としたも
のである(請求項5)。溶媒を純水にすることにより引
火性がなくなり、危険性が低減される。
In the present invention, pure water is used as the solvent (claim 5). By using pure water as the solvent, the flammability is eliminated and the risk is reduced.

【0020】[0020]

【発明の実施の形態】図1は、本発明に係る基板処理装
置の概略図である。同図に示す基板処理装置1は、上面
に半球状の蓋体3が開閉可能に設けられた円筒状の容器
2、加熱ヒータ4,5,6、電源部7、冷却部8、減圧
部9、パージ部10、コンデンサ11及び制御部12を
備えるバッチ式の蒸気洗浄乾燥装置である。
1 is a schematic view of a substrate processing apparatus according to the present invention. The substrate processing apparatus 1 shown in the figure has a cylindrical container 2 on the top of which a hemispherical lid 3 is openably and closably provided, heaters 4, 5, and 6, a power supply unit 7, a cooling unit 8, and a decompression unit 9. This is a batch-type steam cleaning / drying apparatus including a purging unit 10, a condenser 11, and a control unit 12.

【0021】本基板処理装置1は純水を溶媒として利用
する際に最も好適な蒸気洗浄乾燥が行えるように低圧沸
騰により溶媒を蒸気化するようにしている。これにより
純水を過剰に蒸気化させることなく沸騰、蒸発、凝集の
循環を好適に行わせることが可能で、後述するように安
全かつ高効率で基板の蒸気洗浄乾燥を行うことが可能に
なっている。なお、安全性、洗浄効率等の観点から溶媒
として純水を利用することが好ましいが、IPA等の有
機溶媒を使用することも可能である。
The substrate processing apparatus 1 is adapted to vaporize the solvent by low pressure boiling so that the most suitable vapor cleaning and drying can be performed when using pure water as the solvent. As a result, it is possible to suitably circulate boiling, evaporation, and agglomeration without excessively vaporizing pure water, and as described later, it is possible to perform vapor cleaning and drying of the substrate safely and highly efficiently. ing. Although pure water is preferably used as the solvent from the viewpoint of safety and cleaning efficiency, it is also possible to use an organic solvent such as IPA.

【0022】容器2及び蓋体3は洗浄乾燥室を構成する
もので、石英からなり、容器2と蓋体3との接合面には
密閉された洗浄乾燥室を構成し得るようにOリング等の
シール機構が設けられている。また、容器2は側面21
の下部適所に洗浄用の液体のの溶媒Qを供給する供給ポ
ートP1が設けられ、側面21の上部適所に洗浄乾燥室
内の排気を行う排気ポートP2が設けられ、底面22の
略中央に洗浄乾燥処理後の溶媒Qを排出する排出ポート
P3が設けられている。また、洗浄乾燥室内の適所に室
内圧力を検出する圧力センサ13が設けられている。
The container 2 and the lid 3 constitute a cleaning / drying chamber, and are made of quartz, and an O-ring or the like is provided on the joint surface between the container 2 and the lid 3 so as to form a sealed cleaning / drying chamber. The seal mechanism of is provided. Also, the container 2 has a side surface 21.
Is provided with a supply port P1 for supplying a liquid solvent Q for cleaning to an appropriate place on the lower side, an exhaust port P2 is provided at an appropriate place on the upper side of the side surface 21 for exhausting the cleaning / drying chamber, and the cleaning / drying is performed substantially at the center of the bottom surface 22 A discharge port P3 for discharging the treated solvent Q is provided. Further, a pressure sensor 13 for detecting the indoor pressure is provided at an appropriate position in the washing / drying chamber.

【0023】一方、蓋体3は外側に湾曲した半球状をな
し、天井面31の略中央に洗浄乾燥室内の圧力を調節す
るためのパージポートP4が設けられ、このパージポー
トP4にパージ部10が接続されている。各ポートP1
〜P4の基端部にはそれぞれポートの開閉を行うバルブ
B1,B2,B3,B4が設けられている。なお、蓋体
3を湾曲させているのは天井面31に凝集した溶媒Qの
液滴の落下を防止するためのもので、略中央から外周方
向に適宜の角度を傾斜を設けるようにしてもよい。
On the other hand, the lid 3 has a semi-spherical shape curved outward, and a purge port P4 for adjusting the pressure in the washing / drying chamber is provided at substantially the center of the ceiling surface 31, and the purge section 10 is provided at this purge port P4. Are connected. Each port P1
Valves B1, B2, B3, and B4 for opening and closing ports are provided at the base ends of P4 to P4, respectively. The lid 3 is curved so as to prevent the droplets of the solvent Q condensed on the ceiling surface 31 from falling, and an appropriate angle may be provided from the approximate center to the outer peripheral direction. Good.

【0024】加熱ヒータ4は容器2に投入された溶媒Q
を加熱沸騰させるための熱源で、容器2の底面22の下
部に配設されている。また、加熱ヒータ5は洗浄乾燥室
の側面21を加熱するための熱源で、容器2の側面21
の外周部に配設され、加熱ヒータ6は洗浄乾燥室の天井
部を加熱する熱源で、蓋体3の天井面31の外周部に配
設されている。
The heater 4 is the solvent Q charged in the container 2.
Is a heat source for heating and boiling the water vapor and is disposed below the bottom surface 22 of the container 2. The heater 5 is a heat source for heating the side surface 21 of the cleaning / drying chamber, and is a side surface 21 of the container 2.
The heating heater 6 is a heat source for heating the ceiling portion of the cleaning / drying chamber, and is provided on the outer peripheral portion of the ceiling surface 31 of the lid 3.

【0025】加熱ヒータ4〜6は電源部7に接続され、
この電源部7から電源供給される。なお、電源部7の通
電制御は制御部12により行われる。
The heaters 4 to 6 are connected to the power source section 7,
Power is supplied from the power supply unit 7. The energization control of the power supply unit 7 is performed by the control unit 12.

【0026】冷却部8は冷却管81とこの冷却管81に
水又はフロン等の有機溶剤からなる冷媒を循環させる冷
媒循環器82とからなり、冷却管81は容器2の側面上
部の内周面に沿って配設されている。
The cooling unit 8 comprises a cooling pipe 81 and a refrigerant circulator 82 for circulating a cooling medium made of an organic solvent such as water or CFCs in the cooling pipe 81. The cooling pipe 81 is an inner peripheral surface of the upper side surface of the container 2. Are arranged along.

【0027】冷却管81は、加熱ヒータ4により加熱沸
騰されて蒸気化した溶媒Qの上昇を阻止し、下降気流を
生成するために容器2の上部に設けられている。溶媒Q
の蒸気が容器2の上方位置に上昇すると、冷却管81に
より冷却されて液体微粒子(霧)Q′に凝集され、この
霧状の溶媒Q′は自重により下降する。
The cooling pipe 81 is provided above the container 2 in order to prevent the solvent Q, which has been heated and boiled by the heater 4 and vaporized, from rising and to generate a descending air flow. Solvent Q
Of the vapor rises to a position above the container 2, it is cooled by the cooling pipe 81 and condensed into liquid fine particles (fog) Q ', and the atomized solvent Q'falls by its own weight.

【0028】減圧部9はロータリーポンプ等の真空ポン
プを有し、この真空ポンプで排気ポートP2から洗浄乾
燥室内の空気を吸引して洗浄乾燥室内の圧力を所定値に
減圧するものである。減圧部9は、コンデンサ11を介
して排気ポートP2に接続されている。コンデンサ11
は、排気中の水分を分離するもので、分離された水は底
面に設けられたドレイン111を介して排出されるよう
になっている。
The depressurizing unit 9 has a vacuum pump such as a rotary pump, and the vacuum pump sucks air in the washing / drying chamber from the exhaust port P2 to reduce the pressure in the washing / drying chamber to a predetermined value. The decompression unit 9 is connected to the exhaust port P2 via the condenser 11. Capacitor 11
Is for separating water in the exhaust gas, and the separated water is discharged through the drain 111 provided on the bottom surface.

【0029】一方、パージ部10はヘリウム等の不活性
ガスを供給するガス供給部を有し、パージポートP4か
ら減圧された洗浄乾燥室内に不活性ガスを供給して室内
の圧力を常圧にまで上昇させるものである。
On the other hand, the purge unit 10 has a gas supply unit for supplying an inert gas such as helium, and supplies the inert gas into the cleaning / drying chamber whose pressure has been reduced from the purge port P4 so that the pressure inside the chamber becomes normal pressure. Up to.

【0030】容器2内の略中央位置には被洗浄乾燥物で
あるウエハ15を収納するウエハ収納部14が設けられ
ている。ウエハ収納部14は、例えば図2に示すよう
に、長方形の保持枠141の両長辺に複数対の保持溝1
42,142′が所定間隔で穿設されたもので、ウエハ
15の周縁を各保持溝対142,142′に嵌入させる
ことにより複数枚のウエハ15が垂直に立直して配列保
持されるようになっている。
A wafer accommodating portion 14 for accommodating a wafer 15, which is a material to be dried, is provided at a substantially central position in the container 2. For example, as shown in FIG. 2, the wafer storage unit 14 includes a plurality of pairs of holding grooves 1 on both long sides of a rectangular holding frame 141.
42 and 142 'are formed at a predetermined interval, and by inserting the peripheral edge of the wafer 15 into each holding groove pair 142, 142', a plurality of wafers 15 are vertically erected and held in an array. Has become.

【0031】なお、ウエハ15は表裏面が水平面に対し
て傾斜されていれば足り、必ずしも表裏面が鉛直方向に
一致している必要はない。従って、保持溝142,14
2′を保持枠141の長辺の長手方向に対して傾斜さ
せ、ウエハ15の表裏面が鉛直方向に対して傾斜するよ
うにしてもよい。
It is sufficient that the front and back surfaces of the wafer 15 are inclined with respect to the horizontal plane, and the front and back surfaces do not necessarily need to be aligned in the vertical direction. Therefore, the holding grooves 142, 14
2 ′ may be inclined with respect to the longitudinal direction of the long side of the holding frame 141 so that the front and back surfaces of the wafer 15 are inclined with respect to the vertical direction.

【0032】制御部12は予め設定された洗浄乾燥プロ
セスに従ってウエハ15の洗浄乾燥を集中制御するもの
である。制御部12はバルブB1〜B4、電源部7、冷
却部8、減圧部9及びパージ部10等の各アクチュエー
タの駆動を制御してウエハ15の洗浄乾燥を行う。
The controller 12 centrally controls the cleaning / drying of the wafer 15 according to a preset cleaning / drying process. The control unit 12 controls the drive of each actuator such as the valves B1 to B4, the power supply unit 7, the cooling unit 8, the decompression unit 9, and the purge unit 10 to clean and dry the wafer 15.

【0033】次に、上記基板処理装置による洗浄乾燥動
作について、図3のフローチャートに従って説明する。
まず、蓋体3を上方に開放し、容器2内のウエハ収納部
14にウエハ15がセットされた後、蓋体3が閉鎖され
る(ステップS1)。続いて、供給ポートP1のバルブ
B1を開いて、図略の溶媒供給装置から所定量の液体の
溶媒Qが容器2内に供給した後、バルブB1が閉じられ
る(スイッチS2)。続いて、排気ポートP2のバルブ
B2を開き、減圧部9の真空ポンプを駆動させて洗浄乾
燥室内の圧力が所定値に減圧される(ステップS3)。
また、電源部7を駆動して加熱ヒータ4,5,6に電源
が供給され、容器2の底面22、側面21及び蓋体3の
天井部が減圧下での溶媒Qの沸点TQ以上に加熱される
(ステップS4)。
Next, the cleaning / drying operation of the substrate processing apparatus will be described with reference to the flowchart of FIG.
First, the lid 3 is opened upward, the wafer 15 is set in the wafer storage portion 14 in the container 2, and then the lid 3 is closed (step S1). Subsequently, the valve B1 of the supply port P1 is opened to supply a predetermined amount of the liquid solvent Q into the container 2 from a solvent supply device (not shown), and then the valve B1 is closed (switch S2). Then, the valve B2 of the exhaust port P2 is opened, the vacuum pump of the decompression unit 9 is driven, and the pressure in the cleaning / drying chamber is reduced to a predetermined value (step S3).
Further, the power supply unit 7 is driven to supply power to the heaters 4, 5 and 6, and the bottom surface 22, the side surface 21 of the container 2 and the ceiling portion of the lid 3 are heated to a temperature equal to or higher than the boiling point T Q of the solvent Q under reduced pressure. It is heated (step S4).

【0034】洗浄乾燥室が減圧され、加熱ヒータ5が容
器2の底面22を加熱すると、溶媒Qが気化してその蒸
気が上昇する。容器2の側面21は加熱ヒータ5により
加熱されているので、容器2の底部で気化した溶媒Qは
側面21で凝集することなく上方に上昇し、容器2の上
方位置に達すると、冷却管81により冷却されて霧状の
液体微粒子として容媒Q′が凝集する。この霧状の溶媒
Q′は下降して下降気流となるが、下降中に室内温度で
加熱されて蒸気に変換されるので、容器2の底部に達す
る前に再び上昇し、この蒸気化された溶媒Qと液体化さ
れた溶媒Q′とにより洗浄乾燥室内には溶媒Q,Q′の
対流が発生する。なお、蒸発により液体の溶媒Qから奪
われる気化熱は加熱ヒータ4により補充されるので、室
内温度が減圧下での溶媒Qの沸点TQに上昇するまで液
体溶媒Qの蒸気化はスムーズに行われる。
When the cleaning / drying chamber is decompressed and the heater 5 heats the bottom surface 22 of the container 2, the solvent Q is vaporized and its vapor rises. Since the side surface 21 of the container 2 is heated by the heater 5, the solvent Q vaporized at the bottom of the container 2 rises upward without aggregating at the side surface 21 and reaches the upper position of the container 2 and the cooling pipe 81 The carrier medium Q'is condensed as liquid particles in the form of mist by being cooled by. The atomized solvent Q ′ descends to form a descending air stream, but since it is heated at room temperature during the descending and converted into vapor, it rises again before reaching the bottom of the container 2 and is vaporized. Due to the solvent Q and the liquefied solvent Q ′, convection of the solvents Q and Q ′ occurs in the washing / drying chamber. Since the heat of vaporization taken away from the liquid solvent Q by evaporation is replenished by the heater 4, the liquid solvent Q vaporizes smoothly until the room temperature rises to the boiling point T Q of the solvent Q under reduced pressure. Be seen.

【0035】そして、溶媒Q,Q′の対流発生プロセス
において、溶媒Qの蒸気の一部はウエハ15の表面で凝
集し、その液滴がウエハ表面を流下してウエハ15の洗
浄が行われる。また、溶媒Qの凝集による潜熱がウエハ
15に付与され、これによりウエハ15が加熱されて同
時に乾燥も行われる(ステップ5)。
Then, in the convection generation process of the solvents Q and Q ', a part of the vapor of the solvent Q is condensed on the surface of the wafer 15, and the droplets flow down the surface of the wafer 15 to clean the wafer 15. Further, latent heat due to the agglomeration of the solvent Q is applied to the wafer 15, whereby the wafer 15 is heated and simultaneously dried (step 5).

【0036】なお、溶媒Qの蒸気の一部は蓋体3の湾曲
した天井面31まで上昇するが、蓋体3は加熱されてい
るので、溶媒Qが蓋体3の天井面31に凝集してその液
滴がウエハ15上に落下することはない。
Although a part of the vapor of the solvent Q rises up to the curved ceiling surface 31 of the lid body 3, since the lid body 3 is heated, the solvent Q is condensed on the ceiling surface 31 of the lid body 3. The droplets do not drop on the wafer 15.

【0037】続いて、予め設定された所定の洗浄乾燥時
間が経過したか否かが判別され(ステップ6)、洗浄乾
燥時間が経過していれば、洗浄乾燥処理が終了したとし
てステップ7に移行する。なお、上記洗浄乾燥時間は、
潜熱により加熱されたウエハ15の温度が減圧下での溶
媒Qの沸点TQにまで上昇する時間である。ウエハ15
がこの温度に上昇すると、溶媒Qのウエハ15での凝集
が生じなくなるので、この時点でウエハ15の実施的な
洗浄乾燥プロセスは終了する。
Subsequently, it is judged whether or not a predetermined cleaning and drying time set in advance has elapsed (step 6). If the cleaning and drying time has elapsed, it is determined that the cleaning and drying processing has ended, and the process proceeds to step 7. To do. The above washing and drying time is
This is the time for the temperature of the wafer 15 heated by latent heat to rise to the boiling point T Q of the solvent Q under reduced pressure. Wafer 15
Is raised to this temperature, the agglomeration of the solvent Q on the wafer 15 does not occur, so that the practical cleaning and drying process of the wafer 15 is completed at this point.

【0038】ステップ7に移行すると、パージポートP
2のバルブB4を開き、パージ部10から不活性ガスを
洗浄乾燥室に供給して室内の圧力が常圧に戻される。続
いて、蓋体3が開放され、ウエハ15が取り出され(ス
テップ8)、更に排出ポートP2のバルブB2を開き、
容器2内の溶媒Qを排出して(ステップ9)、洗浄乾燥
処理は完了する。
When the process proceeds to step 7, the purge port P
The valve B4 of No. 2 is opened, the inert gas is supplied from the purging unit 10 to the cleaning / drying chamber, and the pressure in the chamber is returned to normal pressure. Subsequently, the lid 3 is opened, the wafer 15 is taken out (step 8), and the valve B2 of the discharge port P2 is further opened.
The solvent Q in the container 2 is discharged (step 9), and the washing / drying process is completed.

【0039】なお、上記実施の形態では、容器2の供給
ポートP2と排出ポートP3とを別個に設けていたが、
図4に示すように共通ポートP5とし、排出通路の途中
に供給通路を分岐させるようにしてもよい。このように
供給/排出ポートを共通ポートP5にすれば、例えば洗
浄薬液による洗浄の終了後に共通ポートP5から純水を
供給して容器2内の洗浄薬液を容器2の上面からオーバ
ーフローさせることによりウエハ15を外気に触れされ
ることなく洗浄薬液と純水とによる洗浄を連続して行う
ことができる。従って、本発明に係る洗浄乾燥装置を用
いて従来行われている一連の洗浄工程と乾燥工程とを連
続的に行うことも可能である。
In the above embodiment, the supply port P2 and the discharge port P3 of the container 2 are provided separately, but
As shown in FIG. 4, the common port P5 may be used, and the supply passage may be branched in the middle of the discharge passage. If the supply / exhaust port is set to the common port P5 in this manner, for example, after the cleaning with the cleaning chemical solution is completed, pure water is supplied from the common port P5 to cause the cleaning chemical solution in the container 2 to overflow from the upper surface of the container 2 It is possible to continuously perform cleaning with the cleaning chemical solution and pure water without exposing 15 to the outside air. Therefore, it is possible to continuously perform a series of conventional washing and drying steps using the washing / drying apparatus according to the present invention.

【0040】また、図5に示すように、超音波発振器1
6を容器2の上面に支持可能にすれば、洗浄工程で必要
に応じて行われる超音波洗浄処理も同一の洗浄乾燥装置
で行うことができる。この場合は、オーバーフローの状
態となるように溶媒Qを供給しながらこの液面に超音波
発振器16を接触させて超音波エネルギーを直接、溶媒
Qに供給すれば、必要に応じた超音波洗浄を容易に行う
ことができる。
Further, as shown in FIG. 5, the ultrasonic oscillator 1
If 6 can be supported on the upper surface of the container 2, an ultrasonic cleaning process, which is performed as necessary in the cleaning process, can be performed by the same cleaning / drying device. In this case, if the ultrasonic wave oscillator 16 is brought into contact with the surface of the liquid while supplying the solvent Q so as to provide an overflow state and the ultrasonic energy is directly supplied to the solvent Q, ultrasonic cleaning may be performed as necessary. It can be done easily.

【0041】[0041]

【発明の効果】以上説明したように、溶媒の蒸気を基板
表面に凝集させ、その溶媒の液滴の流下により基板を洗
浄するとともに、凝集による潜熱により基板の乾燥を行
う基板処理装置において、減圧下で溶媒を加熱しつつ、
低温沸騰により蒸気化するようにしたので、比較的高沸
点の溶媒も有効かつ安全に基板の蒸気洗浄乾燥に利用す
ることができる。また、低圧沸騰させているので、蒸気
補充のための加熱エネルギーを低減することができる。
As described above, in a substrate processing apparatus in which solvent vapor is agglomerated on the surface of a substrate, the substrate is washed by the droplets of the solvent flowing down, and the substrate is dried by latent heat due to the agglomeration. While heating the solvent under
Since it is vaporized by boiling at a low temperature, a solvent having a relatively high boiling point can be effectively and safely used for vapor cleaning and drying of the substrate. Further, since the low pressure boiling is performed, the heating energy for replenishing the steam can be reduced.

【0042】また、密閉容器の天井面を傾斜させたの
で、天井面で凝集した溶媒の液滴の基板への落下を防止
することができる。
Further, since the ceiling surface of the closed container is inclined, it is possible to prevent the droplets of the solvent condensed on the ceiling surface from dropping onto the substrate.

【0043】また、密閉容器の側面略中央部を加熱する
ようにしたので、溶媒の蒸気が容器の内側面に凝集する
ことがなく溶媒の蒸気の対流を効果的に生じさせること
ができる。
Further, since the substantially central portion of the side surface of the closed vessel is heated, the vapor of the solvent does not aggregate on the inner surface of the vessel, and the convection of the vapor of the solvent can be effectively generated.

【0044】更に、上記密閉容器の天井面を加熱するよ
うにしたので、溶媒の蒸気の密閉容器の天井面での露結
が阻止され、溶媒の液滴の基板への落下が防止される。
また、溶媒として純水を用いているので、安全かつ高精
度な洗浄及び乾燥が可能になる。
Further, since the ceiling surface of the closed container is heated, the condensation of the solvent vapor on the ceiling surface of the closed container is prevented, and the droplets of the solvent are prevented from dropping onto the substrate.
Further, since pure water is used as the solvent, safe and highly accurate cleaning and drying can be performed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る基板処理装置の概略図である。FIG. 1 is a schematic view of a substrate processing apparatus according to the present invention.

【図2】ウエハ収納部の構造を示す斜視図である。FIG. 2 is a perspective view showing the structure of a wafer storage unit.

【図3】本発明に係る基板処理装置の洗浄乾燥動作を示
すフローチャートである。
FIG. 3 is a flowchart showing a cleaning / drying operation of the substrate processing apparatus according to the present invention.

【図4】本発明に係る基板処理装置に適用される洗浄乾
燥容器の第2の実施の形態を示す図である。
FIG. 4 is a diagram showing a second embodiment of a cleaning / drying container applied to the substrate processing apparatus according to the present invention.

【図5】本発明に係る基板処理装置を用いて超音波洗浄
を行う方法を示す図である。
FIG. 5 is a diagram showing a method of ultrasonic cleaning using the substrate processing apparatus according to the present invention.

【図6】従来の蒸気乾燥装置の構成を示す概略構成図で
ある。
FIG. 6 is a schematic configuration diagram showing a configuration of a conventional steam drying device.

【符号の説明】[Explanation of symbols]

1 基板処理装置 2 容器 21 側面 22 底面 3 蓋体 31 天井面 4,5,6 加熱ヒータ 7 電源部 8 冷却部 81 冷却管 82 冷媒循環器 9 減圧部 10 パージ部 11 コンデンサ 12 制御部 13 圧力センサ 14 ウエハ収納部 141 保持枠 142,142′ 保持溝 15 ウエハ 16 超音波発振器 Q 溶媒 DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Container 21 Side surface 22 Bottom surface 3 Lid body 31 Ceiling surface 4, 5, 6 Heating heater 7 Power supply section 8 Cooling section 81 Cooling pipe 82 Refrigerant circulator 9 Pressure reducing section 10 Purging section 11 Condenser 12 Control section 13 Pressure sensor 14 Wafer Storage Section 141 Holding Frame 142, 142 'Holding Groove 15 Wafer 16 Ultrasonic Oscillator Q Solvent

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 溶媒の蒸気を基板表面に凝集させ、その
溶媒の液滴の流下により上記基板を洗浄するとともに、
凝集による潜熱の付与により上記基板の乾燥を行う基板
処理装置であって、液体の上記溶媒と上記基板とが収納
される密閉容器と、上記密閉容器内の圧力を減圧する減
圧手段と、液体の上記容媒を加熱し、上記溶媒を蒸発さ
せる第1の加熱手段と、上記密閉容器の側面部の上記基
板の収納位置より上方位置に設けられ、上記溶媒の蒸気
を冷却する冷却手段と、を備えたことを特徴とする基板
処理装置。
1. A solvent vapor is condensed on the surface of a substrate, and the substrate is washed by the flow of droplets of the solvent.
A substrate processing apparatus for drying the substrate by imparting latent heat due to agglomeration, in which a closed container in which the solvent of the liquid and the substrate are stored, a decompression means for reducing the pressure in the closed container, and a liquid A first heating means for heating the solvent to evaporate the solvent; and a cooling means for cooling the vapor of the solvent, the cooling means being provided at a position higher than the storage position of the substrate on the side surface of the closed container. A substrate processing apparatus comprising:
【請求項2】 請求項1記載の基板処理装置であって、
上記密閉容器の天井面は傾斜していることを特徴とする
基板処理装置。
2. The substrate processing apparatus according to claim 1, wherein
A substrate processing apparatus, wherein a ceiling surface of the closed container is inclined.
【請求項3】 請求項1又は2記載の基板処理装置であ
って、上記密閉容器の側面略中央部を加熱する第2の加
熱手段を備えたことを特徴とする基板処理装置。
3. The substrate processing apparatus according to claim 1, further comprising a second heating unit that heats a substantially central portion of a side surface of the closed container.
【請求項4】 請求項1〜3のいずれかに記載の基板処
理装置であって、上記密閉容器の天井部を加熱する第3
の加熱手段を備えていることを特徴とする基板処理装
置。
4. The substrate processing apparatus according to claim 1, wherein the ceiling part of the closed container is heated.
A substrate processing apparatus, comprising:
【請求項5】 請求項1〜4のいずれかに記載の基板処
理装置であって、上記溶媒は純水であることを特徴とす
る基板処理装置。
5. The substrate processing apparatus according to claim 1, wherein the solvent is pure water.
JP32004295A 1995-12-08 1995-12-08 Substrate treating system Pending JPH09162154A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32004295A JPH09162154A (en) 1995-12-08 1995-12-08 Substrate treating system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32004295A JPH09162154A (en) 1995-12-08 1995-12-08 Substrate treating system

Publications (1)

Publication Number Publication Date
JPH09162154A true JPH09162154A (en) 1997-06-20

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JP32004295A Pending JPH09162154A (en) 1995-12-08 1995-12-08 Substrate treating system

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6328809B1 (en) 1998-10-09 2001-12-11 Scp Global Technologies, Inc. Vapor drying system and method
KR100337153B1 (en) * 2000-06-09 2002-05-18 이준호 An washing apparatus of solder ball for soldering
JP2008232567A (en) * 2007-03-22 2008-10-02 Honda Motor Co Ltd Vacuum drying method and vacuum drying apparatus
JP2011071213A (en) * 2009-09-24 2011-04-07 Tokyo Electron Ltd Drying chamber, cleaning and drying processing apparatus, drying processing method, and recording medium
KR101496552B1 (en) * 2013-07-24 2015-02-26 주식회사 엘지실트론 Apparatus for drying wafer
JP2020008188A (en) * 2018-07-04 2020-01-16 ヤマト科学株式会社 Vacuum dryer and vacuum drying method
CN113948425A (en) * 2021-09-16 2022-01-18 长江存储科技有限责任公司 Drying device, etching equipment and wet cleaning equipment

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6328809B1 (en) 1998-10-09 2001-12-11 Scp Global Technologies, Inc. Vapor drying system and method
KR100337153B1 (en) * 2000-06-09 2002-05-18 이준호 An washing apparatus of solder ball for soldering
JP2008232567A (en) * 2007-03-22 2008-10-02 Honda Motor Co Ltd Vacuum drying method and vacuum drying apparatus
JP2011071213A (en) * 2009-09-24 2011-04-07 Tokyo Electron Ltd Drying chamber, cleaning and drying processing apparatus, drying processing method, and recording medium
KR101496552B1 (en) * 2013-07-24 2015-02-26 주식회사 엘지실트론 Apparatus for drying wafer
JP2020008188A (en) * 2018-07-04 2020-01-16 ヤマト科学株式会社 Vacuum dryer and vacuum drying method
CN113948425A (en) * 2021-09-16 2022-01-18 长江存储科技有限责任公司 Drying device, etching equipment and wet cleaning equipment

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