JPH09172231A - Dividing method of ceramic substrate - Google Patents

Dividing method of ceramic substrate

Info

Publication number
JPH09172231A
JPH09172231A JP33057295A JP33057295A JPH09172231A JP H09172231 A JPH09172231 A JP H09172231A JP 33057295 A JP33057295 A JP 33057295A JP 33057295 A JP33057295 A JP 33057295A JP H09172231 A JPH09172231 A JP H09172231A
Authority
JP
Japan
Prior art keywords
ceramic substrate
dividing
dicing
conductor
ground conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33057295A
Other languages
Japanese (ja)
Inventor
Mamoru Ando
守 安藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP33057295A priority Critical patent/JPH09172231A/en
Publication of JPH09172231A publication Critical patent/JPH09172231A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0097Processing two or more printed circuits simultaneously, e.g. made from a common substrate, or temporarily stacked circuit boards

Landscapes

  • Devices For Post-Treatments, Processing, Supply, Discharge, And Other Processes (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide the dividing method capable of avoiding any burrs protruding to back side in case of dividing a ceramic substrate forming a grounding conductor between a conductor pattern and the back by a deposited metal. SOLUTION: A dividing trench 11 is formed on the back of a ceramic substrate 12 in the part corresponding to a dicing line so as to form a grounding conductor 14 on the whole surface for covering the dividing trench 11. Next, the ceramic substrate 12 is divided into individual substrates by dicing step from surface side. In such a constitution, the burrs of the grounding conductor 14 can be contained in the dividing trench 11 thereby enabling the protrusion of the burrs to the back side to be avoided.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、特に放熱板上にセ
ラミック基板を搭載する半導体装置用の、セラミック基
板の分割方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of dividing a ceramic substrate, particularly for a semiconductor device having a ceramic substrate mounted on a heat dissipation plate.

【0002】[0002]

【従来の技術】TV、HDTV、CRT等の偏向回路を
集積化したビデオパック(商品名)なる半導体装置が本
願出願人において商品化されている。半導体素子その他
を固着したセラミック基板を一つのパッケージに収納し
たものであるが、低コスト化の当然の指向として樹脂モ
ールドで製品を供給することがなされている。また、製
造ラインに投入しやすいように他の半導体装置と同様に
リードフレームを用いる手法を例えば特開平6ー258
411号に提案している。
2. Description of the Related Art A semiconductor device called a video pack (trade name) in which deflection circuits such as a TV, HDTV, and CRT are integrated has been commercialized by the present applicant. Although a ceramic substrate to which a semiconductor element or the like is fixed is housed in one package, products are supplied by resin molding as a natural aim of reducing costs. Further, a method of using a lead frame like other semiconductor devices so that it can be easily put into a manufacturing line is disclosed in, for example, Japanese Patent Laid-Open No. 6-258.
No. 411.

【0003】この様な半導体装置では、セラミック基板
を半田ペーストなどにより放熱板に固着するためおよび
セラミック基板の浮遊容量を減じるために、セラミック
基板の裏面側にも全面に金属導体を形成する必要が生じ
る。そして前記セラミック基板に形成したスルーホール
を通して前記金属導体を接地するものである。前記セラ
ミック基板は、一枚の大きなセラミック基板を複数に分
割することにより形成する。図3(A)を参照して、先
ずセラミック基板1の表面側には回路網を構成するため
の配線パターン2を、金属導体の蒸着とホトマスクを用
いたパターニングで形成し、同じく裏面側には蒸着によ
り接地導体3を形成した一枚の大きな基板1を準備す
る。続いて図3(B)を参照して、セラミック基板1の
表面側からダイシングによりセラミック基板1を個々の
基板に分割するものである。
In such a semiconductor device, it is necessary to form a metal conductor on the entire back surface of the ceramic substrate in order to fix the ceramic substrate to the heat sink with solder paste or the like and to reduce the stray capacitance of the ceramic substrate. Occurs. Then, the metal conductor is grounded through a through hole formed in the ceramic substrate. The ceramic substrate is formed by dividing one large ceramic substrate into a plurality of pieces. With reference to FIG. 3 (A), first, a wiring pattern 2 for forming a circuit network is formed on the front surface side of the ceramic substrate 1 by vapor deposition of a metal conductor and patterning using a photomask, and also on the back surface side. A large substrate 1 having a ground conductor 3 formed by vapor deposition is prepared. Subsequently, referring to FIG. 3B, the ceramic substrate 1 is divided into individual substrates by dicing from the front surface side of the ceramic substrate 1.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、ダイシ
ングブレードによりフルカットするとは言え、裏面に形
成した接地導体がブレードに引きずられて、図3(B)
のバリ4が生じやすく、これが製造工程(セラミック基
板上に能動素子、受動素子を搭載する工程)において平
坦面を滑らせる搬送時のトラブルを発生させるという欠
点があった。
However, even though full cutting is performed by the dicing blade, the grounding conductor formed on the back surface is dragged by the blade, and as shown in FIG.
However, there is a drawback in that the burr 4 is likely to occur, and this causes a trouble during transportation of sliding on a flat surface in a manufacturing process (a process of mounting an active element and a passive element on a ceramic substrate).

【0005】セラミック基板上の配線導体を蒸着に依ら
ず印刷パターンで形成する場合には、セラミック基板に
V溝を形成してブレイキングに依り分割することも可能
ではあるが、高周波用の微細化パターンを形成するには
印刷パターンは不向きである。またV溝上に金属導体を
蒸着、パターニングするには、ホトレジスト形成時にホ
トレジストがV溝上に盛り上がるような形になり、これ
がホトマスクと接触してしまうために実施が困難であ
る。故にホトマスクを用いたパターニングを用いるため
には、セラミック基板上からのダイシングがセラミック
基板分割の唯一の手法である。
When the wiring conductor on the ceramic substrate is formed by a printed pattern without vapor deposition, it is possible to form a V groove in the ceramic substrate and divide it by breaking, but a fine pattern for high frequency. The printing pattern is not suitable for forming the. In addition, the vapor deposition and patterning of the metal conductor on the V-groove is difficult to perform because the photoresist rises up on the V-groove when the photoresist is formed, and this is in contact with the photomask. Therefore, in order to use patterning using a photomask, dicing from the ceramic substrate is the only method for dividing the ceramic substrate.

【0006】[0006]

【課題を解決するための手段】本発明は上記従来の課題
に鑑みなされたもので、セラミック基板のダイシングラ
イン予定部分に分割溝を形成し、その上に接地導体を形
成すると共に、セラミック基板の表面側からダイシング
によってセラミック基板を個々に分割することにより、
前記接地導体のバリが前記分割溝内に収まるようにする
ものである。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art. A dividing groove is formed in a portion of a ceramic substrate where a dicing line is to be formed, and a ground conductor is formed on the dividing groove. By dividing the ceramic substrate individually by dicing from the surface side,
The burr of the ground conductor is set within the dividing groove.

【0007】[0007]

【発明の実施の形態】以下に本発明の具体的な実施の形
態を図面を参照しながら詳細に説明する。図1は本発明
の製造方法を示す断面図である。先ず図1(A)に示す
ように、裏面側のダイシングラインに相当する部分に深
さ500μ、幅500μ程度のV字型の分離溝11を形
成した、板厚0.5〜0.8mmのセラミック基板12
を準備する。分離溝11の形状はU字型等でもよい。形
成は、焼成前のセラミック素材に鋳型を押しつけて分離
溝11を形成した後に、前記セラミック素材を焼成する
ことで形成することができる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Specific embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a sectional view showing a manufacturing method of the present invention. First, as shown in FIG. 1 (A), a V-shaped separation groove 11 having a depth of 500 μm and a width of 500 μm is formed in a portion corresponding to a dicing line on the back surface side. Ceramic substrate 12
Prepare The shape of the separation groove 11 may be U-shaped or the like. It can be formed by pressing a mold against the ceramic material before firing to form the separation groove 11, and then firing the ceramic material.

【0008】次いで図1(B)に示すように、セラミッ
ク基板12の表面に金等の導電材料を全面に蒸着した
後、その上にホトレジスト膜を形成し、ホトマスクを用
いて露光、現像してレジスト膜を形成し、該レジスト膜
をマスクにして前記導電材料のエッチングを行うことに
より回路網構成に必要な導電パターンを13を形成す
る。また、セラミック基板12の裏面の全面には膜厚1
000オングストローム程度の金を蒸着して接地導体1
4とする。この接地導体14は分離溝11内にも同様の
膜厚で被着される。表面側の導電パターンの内接地電位
(GND)を印加するパターンと接地導体とは基板12
に形成したビアホールを介して電気的に接続される。セ
ラミック基板12表面側のダイシングライン15部分は
平坦なセラミック素材が露出しているものとする。
Then, as shown in FIG. 1B, after a conductive material such as gold is vapor-deposited on the entire surface of the ceramic substrate 12, a photoresist film is formed on it and exposed and developed using a photomask. A resist film is formed, and the conductive material is etched using the resist film as a mask to form a conductive pattern 13 necessary for the circuit network configuration. In addition, a film thickness of 1 is formed on the entire back surface of the ceramic substrate 12.
Ground conductor 1 by depositing about 000 angstroms of gold
4 is assumed. The ground conductor 14 is also deposited in the separation groove 11 with the same film thickness. The pattern for applying the inner ground potential (GND) of the conductive pattern on the surface side and the ground conductor are the substrate 12
It is electrically connected through the via hole formed in. It is assumed that the flat ceramic material is exposed at the dicing line 15 portion on the front surface side of the ceramic substrate 12.

【0009】次いで図1(C)に示すように、ダイシン
グライン15上からダイシングブレードによりセラミッ
ク基板12を完全に切断して、横10mm縦8mmの如
き複数の基板に分離する。ダイシングブレードがセラミ
ック基板12を貫通するとき、ブレードが分離溝11内
の接地導体14を引きずり図面下方へ押し出してバリ1
6を発生させる。このバリ16はダイシングブレードの
切断速度と接地導体14の膜厚との関係に依るが、高さ
が概ね数十μの範囲内に収まることが確認されている。
従って、分離溝11の深さを適当な値(バリ16の突起
が分離溝11の深さを超えない様な深さ)にしておくこ
とにより、バリ16は接地導体14の水平面から突出す
ることがない。
Next, as shown in FIG. 1C, the ceramic substrate 12 is completely cut from above the dicing line 15 with a dicing blade to separate it into a plurality of substrates having a width of 10 mm and a length of 8 mm. When the dicing blade penetrates the ceramic substrate 12, the blade drags the ground conductor 14 in the separation groove 11 and pushes the ground conductor 14 downward in the drawing to form the burr 1.
Generate 6. It has been confirmed that the burr 16 has a height within a range of several tens of μ although it depends on the relationship between the cutting speed of the dicing blade and the film thickness of the ground conductor 14.
Therefore, by setting the depth of the separation groove 11 to an appropriate value (the depth of the protrusion of the burr 16 does not exceed the depth of the separation groove 11), the burr 16 is projected from the horizontal surface of the ground conductor 14. There is no.

【0010】個々の基板に分離した後、セラミック基板
12に能動素子、受動素子をダイボンド、ワイヤボンド
して前記導電パターン13により回路網を構成し、次い
で基板12を鉄系、銅系のリードフレームの放熱板上に
銀ペーストなどで固着し、リードと前記回路網とをワイ
ヤボンドした後全体を樹脂モールドして製品が完成す
る。前記放熱板は前記接地導体と銀ペーストを介して接
地電位が与えられる。
After being separated into individual substrates, active elements and passive elements are die-bonded and wire-bonded to the ceramic substrate 12 to form a circuit network by the conductive patterns 13, and then the substrate 12 is made of an iron-based or copper-based lead frame. The product is completed by fixing it on the heat radiating plate with silver paste or the like, wire-bonding the leads and the circuit network, and then resin-molding the whole. A ground potential is applied to the heat sink through the ground conductor and silver paste.

【0011】本発明に依れば、上記のダイボンド、ワイ
ヤボンド工程において、接地導体14の裏面側と作業台
の平坦表面とを当接させながら基板12を滑らせる搬送
時に、バリ16が引っかかってトラブルを発生させると
いうような現象を防止できる。図2は第2の実施の形態
を示すものである。セラミック基板12の分離を、図2
(A)に示すように基板12の途中までダイシングした
後、図2(B)で図示したAの方向に力を加えることに
より、セラミック基板12をブレイキングして分離す
る。ブレイキングでも同様にバリ16が発生するが、先
の実施の形態と同様に分離溝11の深さを適宜設定して
おくことで、接地導体14表面より突出しないように製
造することができる。本実施例ではダイシングがセラミ
ック基板12の途中までで済むので、フルカット工程よ
りは工程を簡素化できる。
According to the present invention, in the die-bonding and wire-bonding steps described above, the burr 16 is caught when the substrate 12 is slid while being brought into contact with the back surface of the ground conductor 14 and the flat surface of the workbench. It is possible to prevent a phenomenon that causes a trouble. FIG. 2 shows a second embodiment. The separation of the ceramic substrate 12 is shown in FIG.
As shown in FIG. 2A, after dicing the substrate 12 halfway, a force is applied in the direction of A shown in FIG. 2B to break and separate the ceramic substrate 12. The burr 16 is also generated during the breaking, but by appropriately setting the depth of the separation groove 11 as in the previous embodiment, it is possible to manufacture so as not to project from the surface of the ground conductor 14. In this embodiment, the dicing is completed halfway on the ceramic substrate 12, so the process can be simplified as compared with the full-cut process.

【0012】[0012]

【発明の効果】以上に説明した通り、本発明によれば、
セラミック基板12裏面側に分離溝11を形成すること
で、搬送時のトラブル要因となる接地導体14のバリ1
6が接地導体14より突出しないようにできる利点を有
する。また、第2の実施の形態に依ればダイシングのハ
ーフカットとブレイキングとの組み合わせであるので、
フルカットよりは工程を簡素にでき、コストを下げられ
る利点を有する。
As described above, according to the present invention,
By forming the separation groove 11 on the back surface side of the ceramic substrate 12, the burr 1 of the ground conductor 14 which causes a trouble during transportation.
There is an advantage that 6 can be prevented from protruding from the ground conductor 14. Further, according to the second embodiment, since it is a combination of half cutting and breaking of dicing,
It has the advantages that the process can be simplified and the cost can be reduced compared to full cut.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明を説明するための平面図である。FIG. 1 is a plan view for explaining the present invention.

【図2】本発明を説明するための平面図である。FIG. 2 is a plan view for explaining the present invention.

【図3】従来例をを説明するための平面図である。FIG. 3 is a plan view for explaining a conventional example.

【符号の説明】[Explanation of symbols]

11 分離溝 12 セラミック基板 14 接地導体 11 separation groove 12 ceramic substrate 14 grounding conductor

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 一枚のセラミック基板の裏面に分割溝を
形成する工程と、 前記セラミック基板の表面側にはダイシングライン部分
を除いて導電パターンを形成し、前記セラミック基板の
裏面全面には接地導体を形成する工程と、 前記セラミック基板の表面側からダイシングすることに
より前記セラミック基板を複数の基板に分割する工程
と、を具備することを特徴とするセラミック基板の分割
方法。
1. A step of forming a dividing groove on the back surface of one ceramic substrate, a conductive pattern is formed on the front surface side of the ceramic substrate except a dicing line portion, and a ground surface is formed on the entire back surface of the ceramic substrate. A method of dividing a ceramic substrate, comprising: a step of forming a conductor; and a step of dividing the ceramic substrate into a plurality of substrates by dicing from a front surface side of the ceramic substrate.
【請求項2】 前記分割が、前記セラミック基板の板厚
の全部をダイシングすることによることを特徴とする請
求項1記載のセラミック基板の分割方法。
2. The method for dividing a ceramic substrate according to claim 1, wherein the dividing is performed by dicing the entire thickness of the ceramic substrate.
【請求項3】 前記分割が、前記セラミック基板の板厚
の一部を残してダイシングした後にブレイキングにより
行うことを特徴とする請求項1記載のセラミック基板の
分割方法。
3. The method for dividing a ceramic substrate according to claim 1, wherein the dividing is performed by breaking after dicing while leaving a part of the thickness of the ceramic substrate.
JP33057295A 1995-12-19 1995-12-19 Dividing method of ceramic substrate Pending JPH09172231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33057295A JPH09172231A (en) 1995-12-19 1995-12-19 Dividing method of ceramic substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33057295A JPH09172231A (en) 1995-12-19 1995-12-19 Dividing method of ceramic substrate

Publications (1)

Publication Number Publication Date
JPH09172231A true JPH09172231A (en) 1997-06-30

Family

ID=18234158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33057295A Pending JPH09172231A (en) 1995-12-19 1995-12-19 Dividing method of ceramic substrate

Country Status (1)

Country Link
JP (1) JPH09172231A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020017254A (en) * 2000-08-29 2002-03-07 이형도 A method for formation holes in substrate
JP2011071181A (en) * 2009-09-24 2011-04-07 Hitachi Chem Co Ltd Printed wiring board
KR101388741B1 (en) * 2012-10-04 2014-04-25 삼성전기주식회사 Substrate for power module and method of manufacturing the same
JP2019004132A (en) * 2017-06-19 2019-01-10 パナソニックIpマネジメント株式会社 WIRING BOARD, MANUFACTURING METHOD THEREOF, AND AUTOMOBILE HEADLIGHT USING THE WIRING BOARD
WO2019146638A1 (en) * 2018-01-24 2019-08-01 三菱マテリアル株式会社 Method for manufacturing substrate for power module, and ceramic-copper joint body

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020017254A (en) * 2000-08-29 2002-03-07 이형도 A method for formation holes in substrate
JP2011071181A (en) * 2009-09-24 2011-04-07 Hitachi Chem Co Ltd Printed wiring board
KR101388741B1 (en) * 2012-10-04 2014-04-25 삼성전기주식회사 Substrate for power module and method of manufacturing the same
JP2019004132A (en) * 2017-06-19 2019-01-10 パナソニックIpマネジメント株式会社 WIRING BOARD, MANUFACTURING METHOD THEREOF, AND AUTOMOBILE HEADLIGHT USING THE WIRING BOARD
WO2019146638A1 (en) * 2018-01-24 2019-08-01 三菱マテリアル株式会社 Method for manufacturing substrate for power module, and ceramic-copper joint body
JP2019129207A (en) * 2018-01-24 2019-08-01 三菱マテリアル株式会社 Method for manufacturing substrate for power module, and welded body of ceramics and copper
US11676882B2 (en) 2018-01-24 2023-06-13 Mitsubishi Materials Corporation Method of manufacturing power module substrate board and ceramic-copper bonded body

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