JPH09186073A - Exposure apparatus and method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an exposure equipment capable of producing a semiconductor chip efficiently at a low cost by detecting the state of exposure at the time of emission of each pulse light and performing information processing to judge whether there is any region of poor exposure based on the state of exposure. SOLUTION: A exposure computing element 102 estimates the exposure on a wafer only from data from an exposure detector 12 during actual exposure by taking correlation between the detecting periods based on illuminance detecting signals 108 and 109 obtained from the exposure detector 12 and 15 before the start of actual exposure. And a main control system 104 has an input device 105 for inputting exposure state, a data output interface 107 for outputting exposure state and a display section 106 graphically indicating the exposure state. Also, it receives data such as pulse light emission intensity, stage position and focus state and performs the control processing operation to achieve target exposure input to the input device 105 by using these data.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus for manufacturing semiconductor chips, for example.

[0002]

2. Description of the Related Art Conventionally, in the process of manufacturing a semiconductor chip, when a semiconductor pattern exposure device using pulsed light as a light source is used to expose a circuit pattern or the like of the semiconductor chip, there is a fatal defect in the exposure condition. In the same way, the inspection is performed in the same manner as the normal chip.

[0003]

However, since a semiconductor chip is inspected a plurality of times and a great deal of labor is spent on the inspection, even a defective chip can be inspected in the same manner as a normal chip. If this is done, the manufacturing efficiency will decrease, and as a result, the manufacturing cost will increase.

An object of the present invention is to provide an exposure apparatus capable of manufacturing a semiconductor chip more efficiently and at low cost in view of the problems of the prior art.

[0005]

In order to achieve this object, in an exposure apparatus and method of the present invention, a scan is performed by illuminating an original plate with pulsed light and exposing and transferring the pattern of the original plate onto the substrate while moving the original plate and the substrate. In the mold type exposure apparatus and method, information processing is performed by detecting an exposure state at the time of emitting each pulsed light and determining whether or not there is an area of defective exposure based on the exposure state.

Further, a plurality of pieces of information are detected when the exposure state is detected, and whether or not there is a defective exposure area is determined based on two or more pieces of the plurality of pieces of information when the information processing is performed. And

Further, in the above information processing, the position of the defective exposure region on the substrate is stored.

Further, when the exposure state is detected, the light quantity of each pulsed light is detected.

Further, when the exposure state is detected, the positions of the original plate and the substrate are detected in synchronization with the emission of each pulsed light.

Further, in detecting the exposure state, a relative position between the original plate and a blade defining an illumination area of the original plate is detected.

Further, in detecting the exposure state, the transfer magnification when the pattern of the original plate is transferred is detected for each pulsed light emission.

Further, in the information processing, the past exposure state at the predetermined point on the substrate is taken into consideration, and the integrated exposure amount at the predetermined point when the pulsed light is emitted next time is calculated. It is characterized in that whether or not the predetermined point is defective in exposure is determined based on the result.

Further, the exposure light intensity on the substrate is controlled to be constant, and in consideration of the exposure amount control accuracy in the exposure amount control, it is determined whether or not there is an exposure defective region in the information processing. It is characterized by

[0014]

When the semiconductor exposure apparatus using the pulse light source is used for exposure, the exposure state at that time is synchronized with the emission timing of the pulsed light, that is, the stage synchronization error between the original plate and the substrate, the deviation of the focus direction, Various error factors such as unevenness of exposure intensity which occur at the time of exposure are detected, a specific evaluation is performed for them, and a threshold value is set to the evaluation result to determine the exposure failure in advance. Then, if an exposure failure occurs, if all the chips included in the shot are discarded, the manufacturing efficiency will be significantly deteriorated.
The defective exposure portion in the shot is stored and the data is output. Then, only the chip including the defective exposure portion is discarded as a defect, and the operation check or the like is not performed. That is, as compared with the conventional technique, a portion having an exposure failure during a shot is immediately identified, only chips included in the portion are excluded as a defect, and the subsequent process is performed. As a result, the manufacturing efficiency is improved and the manufacturing cost is reduced as compared with the case where the defective chip is not excluded from the exposure state during the scanning exposure. This is the basic idea of the present invention.
FIG. 4 is a diagram showing the basic concept of the present invention. In the figure,
Reference numeral 201 denotes an area (exposure field) exposed by one scan with a series of pulsed light, 202 denotes an area where an exposure failure has occurred, and 203 denotes a chip area including this area 202. Since it is considered that the exposure failure partially occurs like the region 202, only the chip 203 is affected by the exposure failure. Therefore, the parts other than the chip 203 are in a good exposure state, and only the chip 203 needs to be treated as a defective product.

[0015]

FIG. 2 is a schematic view showing a scanning type exposure apparatus according to an embodiment of the present invention. This apparatus is a semiconductor device such as IC or LSI, a liquid crystal device, an imaging device such as CCD, a magnetic head. It is used when manufacturing a device such as. In the figure, a light beam from a light source 1 that emits pulsed light such as an excimer laser is a beam shaping optical system 2.
Is shaped into a desired shape by and is directed to the light incident surface of the optical integrator 3 such as a fly-eye lens. The fly-eye lens is composed of a collection of a plurality of minute lenses, and a plurality of secondary light sources are formed in the vicinity of the light exit surface thereof.

Reference numeral 4 denotes a condenser lens, which illuminates the masking blade 6 by Koehler illumination with a light beam from a secondary light source of the optical integrator 3. The masking blade 6 and the reticle 9 are arranged in a conjugate relationship by the imaging lens 7 and the mirror 8, and the shape and size of the illumination area on the reticle 9 are defined by the shape of the opening of the masking blade 6, so that the reticle moves. Are scanned in synchronization with. A projection optical system 10 projects the circuit pattern drawn on the reticle 9 onto the semiconductor substrate 11 in a reduced scale. The reticle 9 is fixed to the reticle stage 13 and is aligned with the semiconductor substrate 11 fixed on the wafer stage 14 via the projection optical system 10. An exposure amount detector 15 is arranged on the wafer stage 14, and the exposure amount detector 15 can monitor the exposure amount of the laser when passing through the optical system 10. Reference numeral 12 is another exposure amount detector, which monitors a part of the luminous flux of the pulsed light split by the half mirror 5.

The structure of the control system is composed of a laser control system 103, an exposure amount calculator 102, a stage drive control system 101, an AF calculator 111, and a main control system 104 which controls these calculation parts. The laser control system 103 receives the laser emission intensity and the oscillation timing signal calculated by the main control system 104 so as to obtain the target exposure amount, and the trigger signal 16 and the charging voltage signal 17 cause the laser emitted from the light source 1 to emit laser light. Control the pulse energy and the light emission interval. The exposure amount calculator 102 calculates the actual exposure by correlating those detection periods based on the illuminance detection signals 108 and 109 obtained from the exposure amount detectors 12 and 15 before the actual exposure starts. At this time, the exposure amount on the wafer is estimated only by the data from the exposure amount detector 12. The stage drive control system 101 includes a reticle stage 1
3 and the current positions of the wafer stage 14 are recognized, the data is sent to the main control system 104, and a stage signal 113 is output based on the stage drive signal sent from the main control system 104 to output the stages 13, 14 To drive. AF
The calculator 111 outputs a projection lens drive signal 112 from the data obtained by the AF optical system 110 to control the focus. The focus situation at that time is the main control system 10.
4 to the main control system 104.
Receive from

The above laser control system 103, exposure amount calculator 102, stage drive control system 101, AF calculator 111
Respectively operate in synchronization with a trigger signal for emitting pulsed light to detect each data. Main control system 104
Has an input device 105 for inputting the exposure state, a data output interface 107 for outputting the exposure state, and a display unit 106 for graphically displaying the exposure state. Further, it receives the data such as the pulsed light intensity, the stage position, and the focus condition from each control system, and uses them to perform the control calculation for achieving the target exposure amount input by the input device 105. Based on the result of the control calculation, an emission intensity command signal of pulsed light, a stage drive signal, a focus target signal, etc. are sent to each computing unit, control system, and the like.

Next, a method for judging the exposure failure will be described.
As a cause of the exposure failure of the semiconductor chip, first, an error in the synchronous position shift between the reticle 9 and the wafer 11 can be considered. FIG. 3 is a diagram showing a synchronization error. In a semiconductor exposure apparatus, a wafer (also a reticle in the scanning exposure method) is moved in order to move between shots or to scan the exposure light in the scanning exposure method. At that time, the relative speed between the reticle and the wafer varies, and vibrations are mixed when the respective stages are moved, so that an exposure area 302 different from the exposure area 301 to be originally exposed on the wafer surface. In some cases, the reticle is applied to the wafer, making it impossible to perform exposure at an intended position on the wafer surface.

FIG. 4 shows an outline of the error that occurs at that time. The left diagram of FIG. 4 shows the result of the synchronization error between the first layer and the second layer, and the right diagram shows the synchronization error between the light emission. In the figure on the left, due to the synchronization error between the first layer and the second layer, the portion that should normally be connected between layers also shifts like a circled portion due to the synchronization error. It becomes impossible to configure the circuit. Further, in the right figure, a synchronization error occurs between the reticle and the wafer between the first light emission and the second light emission due to a synchronization error between shots, and it becomes impossible to form a desired circuit. Therefore, when these errors are detected by detecting these errors, the device stores the position where the exposure is defective, and the actual inspection is not performed at the chip inspection stage. Manufacturing efficiency can be improved.

When the exposure error is calculated in synchronization with the emission timing of the pulsed light, the directions of the synchronization error are the X-axis direction which is the scanning direction, the Y-axis direction which is the slit longitudinal direction, and the Z-axis which is perpendicular to the XY plane. Direction, rotation direction about X axis ω _X , rotation direction about Y axis ω _Y , rotation direction about Z axis ω
_Z is considered and must be taken into consideration when determining defects during semiconductor chip manufacturing. As a method of determining the exposure failure, the absolute value of the error in each error direction is added for each emission of the pulsed light, and if the sum exceeds a preset threshold value, the part is determined as the defective exposure. A method can be considered. Further, in order to reduce the calculation load, a method of previously determining the maximum error for each error direction and determining that the exposed portion is defective when the value exceeds the maximum error may be considered.

Further, the error in the X-axis direction is Δx, the error in the Y-axis direction is Δy, and the rotation error around the Z-axis is ω _Z , and the reference position in the exposure area plane is expressed as (x, y) in coordinates. Then, when an error occurs in the X-axis, Y-axis, and Z-axis rotation directions, the coordinates of each point are converted as in the equation (1).

[0023]

[Equation 1] Therefore, the distance between the coordinates after conversion and the coordinates before conversion is calculated, and the distance is added for each light emission at each point in the exposure area. A threshold value is set for the addition result to prevent exposure failure. A method of making a judgment, a method of making a threshold value for the sum of the addition results at each point in the exposure area, and a method of judging an exposure failure can be considered. Further, in the method of determining exposure failure by setting a threshold value for the addition result at each point of such distance, when the threshold value is exceeded, not all the exposure area is defective, but the exposure area surface It is possible to limit the defective exposure region. For this reason, it is considered that only the chip including the defective exposure portion is defective in the exposure area as well, so that the manufacturing efficiency of the semiconductor chip is further improved. The error Δx used here is
Δy and ω _Z are optimum values obtained by a method such as using several measurement points and averaging the values.

To determine the exposure failure between layers, the exposure condition at that position may be determined from the reticle at the same position on the shot and the synchronization shift between the wafers based on the above-described determination criteria.

Next, another method for determining the exposure failure will be described. When exposing a semiconductor chip, a deviation in the distance between the reticle and the wafer causes a deviation in the focal length of the optical system, leading to an exposure error. The deviation of the focal length affects the sharpness of the pattern when the pattern is formed by the exposure apparatus. Then, when the exposure error of the semiconductor chip is detected in synchronization with the emission timing of the pulsed light, the error Z acting on the focal length, the rotation error ω _X about the X axis, and the rotation error Y about the X axis.
It is conceivable to determine the exposure failure in consideration of the rotation error ω _Y about the axis and the like. As the determination method, the absolute value of the error for each direction is added, and it is checked whether the sum exceeds a preset threshold value.
If it exceeds, it may be considered that the exposure is defective. Further, in order to simplify the calculation, the error for each direction is compared with the error threshold value set in advance for each direction, and if the threshold value is exceeded, the exposure of that part is determined to be defective. It is possible. Furthermore, the coordinate system of the wafer surface is defined by X in the scan direction, Y in the slit longitudinal direction, ω _X and ω _Y in the rotation directions with these directions as axes, and the normal direction of the plane consisting of X and Y. If Z is Z and rotation errors of ω _X and ω _Y are added to the coordinate system of the wafer, it is considered that the coordinate transformation of Formula 2 works.

[0026]

[Equation 2] It is.

Assuming that the wafer surface before error is Z = 0, the wafer surface after the rotation error and the error Δz in the Z-axis direction is expressed by the equation (3).

[0028]

(Equation 3) Therefore, a method of substituting the coordinates on the exposure area into the equation (3), obtaining a distance (error) in the focus direction and setting a threshold value for the error, and adding the error at each point of the exposure area, A method of setting a threshold value for the sum can be considered.

The errors Δz, ω _X and ω _Y used here are optimum values obtained by a method such as using several measurement points and averaging the values.

Another method for determining exposure failure will be described. In the semiconductor exposure apparatus, the exposure amount on the wafer surface affects the line width of the pattern printed on the wafer, and thus must be uniform. FIG. 5 shows how an exposure amount is applied onto a wafer in a scanning semiconductor exposure apparatus using a pulse light source. Each step of the stepped portion in FIG. 5 shows a pulsed light having a slit shape, the horizontal position thereof represents the position on the exposure field, and the vertical length thereof represents the intensity of the pulsed light. As shown in the lower diagram of FIG. 5, when there is no error in the emission intensity of the pulsed light and the emission position at that time, ideal exposure is performed, and a uniform exposure amount can be given on the wafer surface. The upper diagram of FIG. 5 shows a case where the exposure state is not ideal, the upper left diagram of FIG. 5 shows the exposure state when the light emitting position is slightly shifted, and the upper right diagram of FIG. 5 shows the emission of pulsed light. This is a case where the intensity deviates from the emission intensity of another pulse. As a factor of the light emitting position error, a light emitting position error of the pulsed light due to a synchronization shift between the reticle stage and the wafer stage and accompanying mechanical noise is considered to be a cause of varying the exposure amount on the wafer surface. . As the direction of the position error, the scan direction X, the slit longitudinal direction Y, the focus direction Z, and the rotation errors ω _X , ω _Y , ω _{Z with} respect to the respective direction axes can be considered. Therefore, when actually using the scanning semiconductor exposure apparatus, the emission intensity of each pulsed light and the emission position of the pulsed light are detected in synchronization with the emission of the pulsed light, and the error included in them is taken into consideration. It is necessary to always grasp the exposure situation on the wafer surface and always calculate the exposure amount error. From the viewpoint of the exposure amount error in the static exposure apparatus, only the variation in the emission intensity of the pulsed light can be considered as a factor that gives the exposure amount error, so only the intensity error needs to be considered.

In the order of the semiconductor exposure process, the exposure (the emission of the pulsed light) is performed after the positioning for the exposure is performed. Therefore, in order to perform the good exposure, the error about the exposure position is calculated, It is necessary to control the exposure light amount so as to cancel the influence of the error, and to consider making the exposure amount error of the portion below the allowable value. But,
When the position error is large and the exposure amount error of that part cannot be made below the allowable value by controlling the exposure amount,
Although the light emission position error is within the permissible range, as a result of light emission, if the error in intensity is large and the error cannot be corrected by the next and subsequent light emission, it is determined that the part is defective in exposure, and The defective exposure area is stored and the information is used when the quality of the chip is determined.

FIG. 6 is a diagram showing a case where the exposure failure is judged.
It is a flowchart of the exposure process with respect to one exposure field. As shown in the figure, when the exposure process is started, the reticle stage and the wafer stage are moved to reach the exposure area, and the moved position is confirmed (step S61). The items to be checked at this time are X, Y, Z, and ω.
Measure _{X 1} , ω _Y, and ω _Z. Then, the emission intensity of the next pulsed light is calculated in consideration of the measured movement position (step S62). Then, by controlling the emission intensity of the next time, it is determined whether or not the required exposure error can be satisfied (step S63). If the exposure error is satisfied, pulsed light is emitted based on the calculation result of the emission intensity (step S63). S64). Since the pulsed light at that time has a variation, the emission intensity due to the variation is confirmed (step S65), the error and the positioning error of the stage are taken into consideration, and the exposure error previously generated by the next pulsed light is added. It is determined whether or not can be corrected within the allowable error range (step S66). Step S6
3 or S66, if it is determined that the required exposure error cannot be satisfied or if the exposure cannot be corrected, then the defective exposure position is stored (step S67), and step S67 is performed.
Proceed to 68. If it is determined in step S66 that the correction is impossible, the process immediately proceeds to step S68. Step S
At 68, the reticle / wafer stage is moved to the next exposure position. Then, it is determined whether or not all exposures have been completed (step S69), and if they have been completed, the exposure operation is completed. If not finished, the process returns to step S61.

Since it is practically impossible to independently adopt the above-mentioned error evaluation criteria when judging whether or not the exposure of the semiconductor exposure apparatus using the pulse light source is possible, it is judged by combining at least two evaluation criteria. It is also possible. In that case, an exposure defect determination method in which appropriate weights or the like are added to these determination criteria and each error is evaluated in a composite manner is also conceivable.

Next, it may be possible to determine exposure failure from the synchronization error between the masking blade and the stage system. During scanning exposure, the masking blade is moved in synchronization with the movement of the reticle stage, that is, the movement of the reticle, in order to shape the shape of the beam irradiated on the reticle stage and to determine the beam irradiation area. However, if there is a synchronization error between the masking blade and the reticle stage,
Due to this, defective exposure occurs. Therefore, it is conceivable to monitor the relative position of the masking blade and the reticle stage during scanning exposure and use that to determine the exposure state to determine whether the exposure area is defective. Relative position elements are X, Y, Z, ω _X , ω _Y , ω _Z
The direction can be considered, and the judgment method determines the allowable error for each direction in the same way as the exposure failure area judgment method based on the synchronization error of the stage, and calculates the synchronization error for a plurality of positions in the judgment area. Then, a method of making a judgment using the largest one among them, a method of setting a threshold value for the sum of the measurement errors at that time to judge an exposure defect, and a threshold value for the statistical processing result of the error of the measurement point You can think of a way to put it.

According to these determination methods, the exposure state is determined from the error caused by the synchronization error between the masking blade and the reticle stage, and the portion determined to be defective as a result is stored, and for a chip including the same portion. The manufacturing efficiency can be improved by reducing the exposure labor in the subsequent layers and by omitting the inspection process.

During scanning exposure, the target reduction ratio of the projection optical system may be set with respect to the position of the stage. Therefore, the reduction ratio of the projection optical system must be controlled in real time with respect to the position of the stage. However, an error may occur between the target reduction ratio of the projection optical system and the actual reduction ratio. FIG. 7 is a diagram showing a case where the reduction ratio of the projection system is changed during scan exposure. FIG. 7A is a diagram showing the reduction magnification of the projection optical system at the scan position. The dotted line shows the case where the target reduction ratio is constant, but the reduction ratio may be changed at the scan position as in the solid line. At this time, the area to be printed on the wafer is as shown by the portion surrounded by the solid line in FIG. However, when the reduction ratio of the solid line is as shown by the wavy line in FIG. 7 (A), the area to be printed on the wafer is surrounded by the wavy line in FIG. 7 (B), and the shape of this wavy line is the solid line. If the shape is very different,
Distortion of the image will occur locally or entirely on the exposed surface, and it is considered that the overlay of the next layer or later is affected. Therefore, it becomes necessary to determine the exposure state from the error between the target reduction ratio at the scan position of the projection optical system and the actual reduction ratio.

The concept of the present invention is applied to the error of the projection optical system, the actual reduction ratio of the projection optical system for each pulse exposure is detected by the reduction ratio detecting means, and the projection optical system for the target reduction ratio is detected. When the error of the reduction ratio is large, re-exposure may be performed without performing exposure. To determine the error, a threshold value is set for a certain evaluation standard, and the exposure state is determined based on the threshold value.
The method of setting the threshold in that case is to set the deviation amount from the target reduction ratio itself, measure the deviation from the target value for several measurement points on the scanning field, and statistically process them to obtain the statistical value. On the other hand, based on the method of setting a threshold value and the circuit pattern, the circuit pattern is more complicated than other parts, and if more strict accuracy is required for the reduction ratio, For the measured value,
It can be considered that the method is applied to a method of setting a threshold value for the shift amount after applying a weight, or a method of setting a threshold value for the result of statistical processing.

By using these series of methods, the exposure failure due to the error of the reduction magnification of the projection optical system is determined, the portion determined as the exposure failure is stored, and for the chip including the same portion, It is possible to improve the manufacturing efficiency by reducing the exposure labor in the subsequent layers and by omitting the inspection process.

FIG. 8 shows that after the semiconductor chip is exposed,
It is a flowchart of the process of cutting them into each and every chip. It is assumed that the position where the exposure is defective is determined by any of the above methods, and the position where the exposure is defective is previously stored in a memory or the like. In the cutting process, first, the exposure failure position is read (step S71), and the chip is cut (step S7).
2). Then, the defective exposure position is compared with the current cutting position to determine whether the cut chip includes the defective exposure region (step S73). If the chip that has been cut includes the exposure area, discard the chip (step S
74), if not included, it moves directly to the next cutting position (step S75). Then, it is judged whether or not it is within the cutting area (step S76). If it is within the cutting area, the process returns to step S72 to perform the cutting again, and if it is outside the cutting area, the cutting ends.

Furthermore, the operator can be informed of the exposure status on the wafer surface by displaying the exposure status on the display portion provided in the exposure apparatus. FIG. 9 shows an example of the display, showing the defective exposure portion 801 and
It is shown that the chip 802 including the defective exposure portion is a defective chip due to defective exposure.

[0041]

As described above, according to the present invention, the exposure light supply means for supplying a large number of pulse lights, the light quantity detection means for detecting the light quantity of the pulse light sequentially supplied from the exposure light supply means, and the pulse light Position detection means for detecting the positions and orientations of the original plate and the exposed substrate in synchronization with the light emission, and a calculation means for calculating the exposure state at the time of pulsed light emission from the detection results of the light amount detection means and the position detection means. By doing so, it is possible to quickly identify the portion in the shot where the exposure failure occurred, and only the chips included in that portion become defective, and the subsequent process can be performed.

Further, the manufacturing efficiency is improved and the manufacturing cost is reduced as compared with the case where the defective chip is not excluded from the exposure condition during the scanning exposure.

[Brief description of the drawings]

FIG. 1 is a diagram showing a basic concept of an exposure failure portion according to an embodiment of the present invention.

FIG. 2 is a diagram showing a configuration of a semiconductor exposure apparatus according to an embodiment of the present invention.

FIG. 3 is a diagram showing an error of synchronization deviation.

FIG. 4 is a diagram showing an outline of an error according to FIG.

FIG. 5 is a diagram showing how to provide an exposure amount onto a wafer in a scanning semiconductor exposure apparatus using a pulse light source.

FIG. 6 is a flowchart for determining an exposure failure.

FIG. 7 is an explanatory diagram in the case where the reduction ratio of the projection system is changed during scan exposure.

FIG. 8 is a flowchart when cutting semiconductor chips into individual chips after completing the exposure.

FIG. 9 is a diagram showing a display example displayed on a display device included in the semiconductor exposure apparatus.

[Explanation of symbols]

1: Light source, 2: Beam shaping optical system, 3: Optical integrator, 4: Condenser lens, 5: Half mirror, 6: Masking blade, 7: Imaging lens, 8: Mirror, 9: Reticle, 10: Projection optical system , 11: semiconductor substrate, 12: exposure amount detector, 13: reticle stage,
14: Wafer stage, 15: Exposure amount detector, 16: Trigger signal, 17: Charge voltage signal, 101: Stage drive control system, 102: Exposure amount calculator, 103: Laser control system, 104: Main control system, 105 : Input device, 106: display unit, 107: data output interface, 108: illuminance detection signal, 109: illuminance detection signal, 110: AF optical system, 111: AF calculator, 112: projection lens drive signal, 113: stage signal , 201: area, 202: defective exposure portion, 203: chip, 301: original exposure position, 302: actual exposure position, 801: defective exposure portion,
802: chip, 803: an area obtained by multiplying a circuit in the reticle by ¼, 804: wafer moving direction, 805: reticle stage moving direction, 806: an area exposed by pulsed light emission once.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kunitaka Ozawa 53 Imaiuemachi, Nakahara-ku, Kawasaki-shi, Kanagawa Canon Inc. Kosugi Plant

Claims (18)

[Claims] 1. A scanning type exposure apparatus for illuminating an original plate with pulsed light and exposing and transferring the pattern of the original plate onto the substrate while moving the original plate and the substrate, and means for detecting an exposure state at the time of emitting each pulsed light. And an information processing unit that determines whether or not there is a defective exposure region based on the exposure state. 2. The exposure state detection means detects a plurality of pieces of information, and the information processing means determines whether or not there is an exposure failure area based on two or more pieces of the plurality of pieces of information. The exposure apparatus according to claim 1. 3. The information processing means stores the position on the substrate of the area of defective exposure.
Exposure apparatus according to the above. 4. The exposure state detecting means includes means for detecting the light quantity of each pulsed light.
[3] The exposure apparatus according to [3]. 5. The exposure apparatus according to claim 1, wherein the exposure state detecting means has means for detecting the positions of the original plate and the substrate in synchronization with the emission of each pulsed light. 6. The exposure apparatus according to claim 1, wherein the exposure state detecting means has a means for detecting a relative position between the original plate and a blade defining an illumination area of the original plate. 7. The exposure apparatus according to claim 1, wherein the exposure state detecting means includes means for detecting a transfer magnification when the pattern of the original plate is transferred, for each pulsed light emission. . 8. The information processing means calculates an integrated exposure amount at the predetermined point when the next pulsed light emission is performed in consideration of a past exposure state at the predetermined point on the substrate. , It is determined whether or not the predetermined point is an exposure failure based on the result.
8. The exposure apparatus according to 7. 9. An exposure amount control means for maintaining a constant exposure light intensity on the substrate is provided, and in consideration of the exposure amount control accuracy of the exposure amount control means, the information processing means has 9. It is determined whether or not there is any.
Exposure apparatus according to the above. 10. A scan-type exposure method of illuminating an original plate with pulsed light, exposing and transferring the pattern of the original plate onto the substrate while moving the original plate and the substrate, and detecting an exposure state at the time of emitting each pulsed light. And an information processing step of determining whether or not there is an exposure failure area based on the exposure state. 11. The exposure state detecting step detects a plurality of pieces of information, and the information processing step determines whether or not there is an exposure failure area based on two or more pieces of the plurality of pieces of information. The exposure method according to claim 10. 12. The information processing step stores the position on the substrate of the region of defective exposure.
11. The exposure method according to 11 above. 13. The exposure method according to claim 10, wherein the exposure state detecting step includes a step of detecting a light amount of each pulsed light. 14. The exposure method according to claim 10, wherein the exposure state detecting step includes a step of detecting the positions of the original plate and the substrate in synchronization with the emission of each pulsed light. 15. The exposure state detecting step includes a step of detecting a relative position between the original plate and a blade defining an illumination area of the original plate.
Exposure method according to the above. 16. The exposure state detecting step includes a step of detecting a transfer magnification when the pattern of the original plate is transferred, for each pulsed light emission.
16. The exposure method according to 15. 17. The information processing step calculates an integrated exposure amount at the predetermined point when the next pulsed light emission is performed in consideration of the past exposure state at the predetermined point on the substrate. The exposure method according to claim 10, further comprising: determining whether or not the predetermined point is defective in exposure based on the result. 18. An exposure amount control step for making the exposure light intensity on the substrate constant, and in consideration of the exposure amount control accuracy in the exposure amount control step, a region of poor exposure is identified in the information processing step. 18. The exposure method according to claim 17, wherein it is determined whether or not there is.