JPH09213632A - Method for manufacturing ii-vi semiconductor crystal - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain II-VI semiconductor crystal having excellent crystallinity and sufficiently high conductivity in a simple device by specifying the substrate temperature using II-VI group compound composed of a part or total of the constituent element of II-VI semiconductor crystal as for the source for VI group element. SOLUTION: As for the source for VI group element, II-VI group compound composed of a part or total of the constituent element of the II-VI semiconductor crystal is used while specifying the substrate temperature not to exceed 200 deg.C. For example, after fitting a GaAs semiconductor substrate as for a substrate 4 to a substrate holder 3, a vacuum vessel 1 is high vacuumized to keep the temperature of the substrate 4 at 100-200 deg.C and heating a cell 5 at the higher temperature capable of evaporating ZnSe, e.g. at 800 deg.C for irradiating the substrate 4 with molecular beam gas of Se gas, Zn gas as the main components. Simultaneously, on the substrate 4 surface active nitrogen gas is ejected from a nitrogen gas cell 6 so as to grow nitrogen-doped p-type ZnSe crystalline layer on the substrate 4 surface.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention manufactures II-VI group semiconductor crystals by the MBE method (molecular beam epitaxy method).
The present invention relates to a method for manufacturing a II-VI group semiconductor crystal.

[0002]

2. Description of the Related Art ZnS having a wide bandgap of direct transition type
II-VI group compound semiconductors such as e, ZnSSe, and MgZnSSe are capable of emitting light in the bands from ultraviolet light to blue and green, and thus are actively studied as materials for semiconductor lasers and light emitting diodes.

By the way, when crystal growth of such a compound semiconductor is carried out by the MBE method, conventionally, it has been necessary to set the substrate temperature sufficiently high in order to improve the crystal quality.

On the other hand, it has been known that the II-VI group semiconductor has a stronger self-compensating action for canceling the conductivity as the substrate temperature increases.

Therefore, the substrate temperature is usually 200 ° C.
When a higher temperature is set and, for example, a ZnSe single crystal is grown, a method of using Zn or Se as a source or a method of using ZnSe is adopted.

Further, as a report except that the substrate temperature is set to 200 ° C. or higher, the gas released from the source of Se alone by heating is Se ₂ at a temperature higher than the evaporation temperature of Se.
There is an example in which a non-doped ZnSe single crystal is grown under the condition that the substrate temperature is 150 ° C. while cracking into low order molecules such as.

[0007]

However, it has been difficult to obtain a single crystal having a sufficiently high conductivity by the method in which the substrate temperature is 200 ° C. or higher without cracking as described above.

Further, for example, by using a simple substance of Se as a source,
In the case of the cracking treatment, first, a simple substance of Se is heated at a low temperature at which evaporation is possible to form a high-order molecular gas such as Se _n (n> 2), and then the gas is heated to a high temperature to remove S.
e requires special equipment to crack into ₂ molecules,
It was also unknown whether a single crystal with sufficiently high conductivity could be obtained.

The present invention has been made in view of the above-mentioned problems, and has a good crystallinity II having a sufficiently high conductivity with a simple device.
-An object of the present invention is to provide a manufacturing method capable of manufacturing a group VI semiconductor crystal.

[0010]

A method for producing a II-VI group semiconductor crystal according to the present invention is a method of forming a II-VI group semiconductor crystal on a substrate by MB.
In the method for producing a II-VI semiconductor crystal produced by the E method, a II-VI compound composed of all or part of the constituent elements of the II-VI semiconductor crystal is used as a source for the VI element. The substrate temperature is less than 200 ° C.

In the production method of the present invention, since the group VI element which easily forms high-order molecules is supplied by the source composed of the II-VI group compound and the substrate temperature is lower than 200 ° C.,
The group VI gas evaporated from the source composed of the II-VI group compound has a large sticking coefficient and is mainly composed of diatomic molecules that easily migrate on the substrate surface. Evaporate from a source consisting of V
Group I gas (main component: diatomic molecule), Group II gas (main component:
In addition to the small mass of the (atom) constituents, the source must be heated above the vaporization temperature of the II-VI compound, which results in a Group II gas beam evaporating from the source and
The group VI gas beam irradiates the substrate with very large kinetic energy, so that migration is improved. At this time, since the substrate temperature is lower than 200 ° C., re-evaporation after migration can be suppressed, good crystallinity can be ensured, and self-compensation effect can be suppressed to realize high conductivity. Moreover, no special device for cracking is used.

In particular, as the source, in addition to the source for the group VI element, a source for the group II element made of a single group II element constituting the II-VI semiconductor crystal is used.

In this case, the VI / II ratio during growth can be easily changed appropriately, and a II-VI group semiconductor crystal with better crystallinity can be obtained.

The method for producing a II-VI group semiconductor crystal of the present invention is the method for producing a II-VI group semiconductor crystal in which a ZnSe crystal is produced on a substrate by the MBE method, wherein ZnSe or ZnSe is used as a source. With Zn,
It is characterized in that the substrate temperature is less than 200 ° C.

Further, the method for producing a II-VI group semiconductor crystal of the present invention is the method for producing a II-VI group semiconductor crystal in which a ZnSSe crystal is produced on a substrate by the MBE method, wherein ZnS and ZnSe as a source, or Zn, ZnS and ZnS
e is used, and the substrate temperature is set to less than 200 ° C.

Further, the method for producing a II-VI group semiconductor crystal of the present invention is a method for producing a II-VI group semiconductor crystal in which a ZnMgSe crystal is produced on a substrate by the MBE method, wherein ZnSe, MgSe and ZnSe are used as sources. Mg, ZnS
e and MgSe and Zn, ZnSe and MgSe and Mg, Zn
Se, MgSe, Zn and Mg, MgSe, Zn and Mg,
Alternatively, Zn or MgSe is used, and the substrate temperature is set to less than 200 ° C.

Further, the method for producing a II-VI group semiconductor crystal of the present invention is the method for producing a II-VI group semiconductor crystal in which a ZnSeTe crystal is produced on a substrate by the MBE method, wherein ZnTe and ZnSe are used as a source, or Zn, ZnSe, and ZnTe are used, and the substrate temperature is set to less than 200 ° C.

The method for producing a II-VI group semiconductor crystal of the present invention is the same as the method for producing a II-VI group semiconductor crystal in which a MgZnSSe crystal is produced on a substrate by the MBE method. ZnSe, MgS, and ZnSe are used as sources. MgSe and Z
nS, ZnSe and MgS and ZnS, ZnSe and ZnS and Mg, ZnSe and MgSe and MgS, ZnSe and MgS
And Zn, ZnSe and MgS and Mg, ZnSe and ZnS and MgSe and MgS, ZnSe and ZnS and MgSe and Z.
n, ZnSe, ZnS, MgSe, Mg, ZnSe and Z
nS, MgS, Zn, ZnSe, ZnS, MgS, M
g, ZnSe, ZnS, Mg, Zn, ZnSe and MgS
e, MgS and Zn, ZnSe, MgSe, MgS and M
g, ZnSe, MgS, Mg and Zn, ZnSe and ZnS
And MgSe and MgS and Zn, ZnSe and ZnS and MgS
e and MgS and Mg, ZnSe and ZnS, MgSe and Mg
And Zn, ZnSe and ZnS, MgS, Mg, Zn, and Zn
Se, MgS, MgSe, Mg and Zn, ZnSe and Zn
S, MgSe, MgS, Mg and Zn, ZnS and MgS
e, ZnS, MgSe and MgS, ZnS, MgSe and Z
n, ZnS, MgSe and Mg, MgSe, MgS and Z
n, ZnS, MgSe, MgS and Zn, MgSe and Mg
S, Mg and Zn, ZnS, MgSe, MgS, Mg and Z
n, ZnS, MgSe, MgS, Mg, Zn, ZnS, MgSe, Mg, Zn, or ZnS, MgSe, MgS
And Mg are used, and the substrate temperature is 200 ° C.
It is characterized in that it is less than.

In particular, the growth rate of the II-VI group semiconductor crystal is characterized by being higher than 1.4 μm / hr.

Further, the growth rate of the II-VI group semiconductor crystal is 1.8 μm / hr or less.

Further, the substrate temperature is 100 ° C. or higher.

In this case, the crystallinity becomes better.

In particular, the substrate temperature is 150 ° C. or higher.

In this case, the crystallinity is very good.

Further, the substrate temperature is 180 ° C. or lower.

In this case, the crystallinity is very good.

During the II-VI group semiconductor crystal growth,
It is characterized by doping an acceptor or a donor. Nitrogen is particularly preferable as the acceptor.

In particular, during the II-VI semiconductor crystal growth,
It is characterized by irradiating a nitrogen molecule or active nitrogen (such as a nitrogen molecule in a triplet excited state or a nitrogen atom in a triplet excited state) to make the II-VI group semiconductor crystal p-type.

The present invention is particularly preferable for producing a II-VI semiconductor single crystal.

[0030]

BEST MODE FOR CARRYING OUT THE INVENTION II-VI according to one embodiment of the present invention
A method for manufacturing a group semiconductor single crystal will be described. Of the present invention
The II-VI group semiconductor single crystal is manufactured by the MBE apparatus, and FIG. 1 is a schematic configuration diagram of the MBE apparatus used in this embodiment.

In FIG. 1, 1 is a vacuum container, 2 is an exhaust port connected to a vacuum pump (not shown) to evacuate the inside of the vacuum container 1, and 3 is a substrate (irradiation object) installed in the vacuum container.
4 is a substrate holder for supporting the substrate 4 and heating the substrate 4 to maintain it at a desired substrate temperature. 5 is a cell as a molecular beam source which is installed in the vacuum container 1 and which stores ZnSe of high purity (purity 99.9999%) for irradiating the surface of the substrate 4 with the molecular beam; It is a nitrogen gas cell installed in the vacuum container 1 for irradiating the surface of the substrate 4 simultaneously with the desired molecular beam. Incidentally, 7, 8, 9
Is a cell as another molecular beam source.

An example of a method of manufacturing a p-type ZnSe crystal using this apparatus will be shown below.

First, a GaAs semiconductor substrate is mounted on the substrate holder 3 as the substrate 4, and then the inside of the vacuum container 1 is evacuated to a high vacuum of preferably about 10 ^-9 Torr.
Then, in a state where the substrate temperature of the substrate 4 is maintained at 100 ° C. or higher and lower than 200 ° C., a temperature higher than a temperature at which ZnSe can evaporate in the cell 5, 680 ° C. to 1200 ° C., preferably 70 ° C.
When heated at 0 ° C. to 900 ° C., for example 800 ° C., the main components from this cell 5 are Se gas (main component: Se ₂ molecules) and Zn gas (main component: Zn atoms), and the total beam pressure is The surface of the substrate 4 is irradiated with a molecular beam gas of 1 × 10 ⁻⁷ Torr and is connected to a gas cylinder (not shown) containing a nitrogen molecule (N ₂ ) gas, and the nitrogen molecule is discharged at an output of 140 W. A p-type ZnSe in which nitrogen is doped on the surface of the substrate 4 is irradiated by irradiating a gas made of active nitrogen having a pressure of 1 × 10 ⁻⁷ to 1 × 10 ⁻⁵ Torr emitted from the nitrogen gas cell 6 exposed to the atmosphere. A crystal layer was grown.

FIG. 2 shows the substrate temperature (growth temperature) and p-type Zn.
The relationship of the growth rate of a Se crystal layer is shown.

From FIG. 2, it can be seen that when the substrate temperature is lower than 200 ° C., the growth rate becomes remarkably high, which is about twice the conventional growth rate (about 0.7 μm / hr). In particular, it can be seen that the growth rate is high when the substrate temperature is 180 ° C. or lower.

That is, when the temperature is lower than 200 ° C.,
The growth rate is higher than 1.4 μm / hr, and higher than 1.6 μm / hr at 180 ° C. or lower, 150 ° C. to 100 ° C.
It can be understood that the growth rate tends to be saturated (1.8 μm / hr) at.

FIG. 3 shows the relationship between the substrate temperature of the p-type ZnSe crystal layer and the half width of the X-ray rocking curve of the p-type ZnSe crystal layer. Incidentally, (400) reflection was used for the measurement.

From FIG. 3, the substrate temperature is 100 ° C. or higher.
It can be seen that even when the temperature is lower than 00 ° C., a half value width similar to that when the normal substrate temperature is around 300 ° C. can be obtained.
It can be seen that the temperature around ℃ is the smallest.

That is, it can be seen that sufficient good crystals can be obtained even when the substrate temperature is 100 ° C. or higher and lower than 200 ° C., and it is particularly preferable that the temperature is around 200 ° C.

FIG. 4 shows the relationship between the nitrogen atom concentration and the acceptor concentration in the p-type ZnSe crystal layer when the substrate temperature is 150 ° C. and when the substrate temperature is 260 ° C. as a comparative example.

From FIG. 4, when the substrate temperature is 260 ° C.
The nitrogen atom concentration is 2 × 10¹⁸cm^-3Acceptor by degree
Concentration is 8 × 10¹⁷cm^-3And the upper limit, this nitrogen atom concentration
In the region above 100 degrees C, the nitrogen atom becomes more self-compensating.
Overdoping and increasing the nitrogen atom concentration
The acceptor concentration decreases sharply while the substrate temperature
If the temperature is 150 ° C, the self-compensation effect is suppressed and
As a result of the reduction of excess doping, the acceptor concentration is also reduced to nitrogen source.
Child concentration is 4 × 10¹⁸cm^-32 × 10¹⁸cm ^-3Get
Even in the region above this nitrogen atom concentration, 1 × 10¹⁸cm
^-3It can be seen that a larger acceptor concentration is obtained.

FIG. 5 is a diagram showing the relationship between the acceptor concentration and the substrate temperature. The pressure of the gas composed of active nitrogen emitted from the nitrogen gas cell 6 was kept constant at 1 × 10 ⁻⁷ Torr.

From FIG. 5, it can be seen that the substrate temperature is less than 200.degree.
The acceptor concentration is 10 ¹⁸cm^-3More fully
You can see that it can be increased. That is, II-V as a molecular source
In addition to using a Group I compound (ZnSe), the substrate temperature
If the temperature is less than 200 ° C, the substrate temperature is 200 ° C or more
Higher acceptor concentration (conductivity) than
It turns out that it is.

From the relationship between FIG. 5 and FIG. 3,
It is understood that the substrate temperature is preferably 150 ° C. to 180 ° C. in order to have more preferable crystallinity and high conductivity.

As described above, the reason why the p-type ZnSe single crystal having high conductivity and good crystallinity can be obtained is as follows. Firstly, the supply of the group VI element (Se) which easily forms a high-order molecule to the ZnSe source. It is because it is done by. That is, the source for supplying the group VI element (here, also serves as the source for supplying the group II element) is II-VI.
This is because it is made of a group compound (ZnSe), and secondly, because the substrate temperature is lower than 200 ° C.

This is because the Se gas evaporated from the ZnSe source is mostly Se ₂ molecules having a large sticking coefficient, so that migration can be favorably carried out on the substrate surface.

Moreover, as described above, Se gas (main component: Se ₂ molecule) evaporated from the source made of ZnSe, Z
In addition to the small mass of the constituents of n gas (main component: Zn atom), the source made of ZnSe needs to be heated above the evaporation temperature of ZnSe. As a result, Se gas and Zn vaporized from the source and Zn Since the gas is irradiated onto the substrate with a very large kinetic energy, migration is further improved. Then, at this time, since the substrate temperature is lower than 200 ° C., re-evaporation after migration is suppressed, so that good crystallinity can be secured, and
It is considered that the self-compensation effect is suppressed and high conductivity can be realized.

In the above, the method of manufacturing a ZnSe single crystal using the source made of ZnSe has been described.
A ZnSe single crystal can be obtained by using both a source made of Se and a source made of Zn.

The present invention also provides ZnSS other than ZnSe.
e single crystal, ZnMgSe single crystal, ZnSeTe single crystal,
Group II-VI semiconductor crystals such as MgZnSSe single crystal and CdTe single crystal can also be manufactured.

For example, in the case of ZnSSe crystal, Zn
In addition to the method of using a source made of S and a source made of ZnSe, Zn to source and ZnS to source and ZnSe
There is also a method using a source consisting of.

In the case of ZnMgSe crystal, Zn
A method using a source made of Se and a source made of MgSe, a method made of a source made of ZnSe and a source made of Mg, a method made of a source made of ZnSe, a source made of MgSe and a source made of Zn, ZnSe
Method using a source consisting of Mg and a source consisting of MgSe and a source consisting of Mg, a source consisting of ZnSe and Mg
Method using source composed of Se, source composed of Zn and source composed of Mg, source composed of MgSe and Zn
There is a method using a source consisting of Mg and a source consisting of Mg, or a method using a source consisting of Zn and a source consisting of MgSe.

In the case of ZnSeTe crystal, Zn
There is a method of using a source of Te and a source of ZnSe, or a method of using a source of Zn and a source of ZnSe and a source of ZnTe.

In the case of MgZnSSe crystal, Z
nSe source and MgS source method, ZnSe source and MgSe source and ZnS source, ZnSe source, MgS source and ZnS source, ZnSe Using a source consisting of Zn, a source consisting of ZnS and a source consisting of Mg, Zn
Source made of Se and source made of MgSe and MgS
A source using ZnSe, a source consisting of ZnSe and a source consisting of MgS and a source consisting of Zn, a source consisting of ZnSe and a source consisting of MgS and a source consisting of Mg, a source consisting of ZnSe and ZnS A source made of MgSe and a source made of MgS, a source made of ZnSe and a source made of ZnS, a source made of MgSe and a source made of Zn, a source made of ZnSe and a source made of ZnS and MgSe Using a source consisting of Mg and a source consisting of Mg, ZnSe
A method using a source made of ZnS, a source made of ZnS, a source made of MgS, and a source made of Zn, ZnSe
A method using a source made of Mg, a source made of ZnS, a source made of MgS, and a source made of Mg, ZnSe
And a method of using a source of ZnS, a source of ZnS and a source of Zn, a method of using a source of ZnSe, a source of MgSe, a source of MgS and a source of Zn, and ZnS
a method using a source made of e, a source made of MgSe, a source made of MgS, and a source made of Mg, Zn
Method using a source consisting of Se, a source consisting of MgS, a source consisting of Mg and a source consisting of Zn, ZnS
e source, ZnS source, MgSe source, MgS source, and Zn source, method using ZnSe source, ZnS source, MgSe source, MgS source, and Mg Source method, ZnSe
A source composed of ZnS, a source composed of ZnS, a source composed of MgSe, a source composed of Mg and a source composed of Zn, a source composed of ZnSe, a source composed of ZnS, a source composed of MgS and a source composed of Mg and Zn composed of Source method, source made of ZnSe, source made of MgS, source made of MgSe, source made of Mg and source made of Zn, source made of ZnSe, source made of ZnS, source made of MgSe and MgS Source and M
a method using a source composed of g and a source composed of Zn,
A method using a source made of ZnS and a source made of MgSe, a method made of a source made of ZnS and a source made of MgSe and a source made of MgS, a method made of a source made of ZnS, a source made of MgSe and a source made of Zn, ZnS Method using a source composed of Mg and a source composed of MgSe and a source composed of Mg, MgS
Method using a source composed of e, a source composed of MgS and a source composed of Zn, a source composed of ZnS and MgS
Method using source made of e, source made of MgS and source made of Zn, source made of MgSe and Mg
Method using source composed of S, source composed of Mg and source composed of Zn, source composed of ZnS and MgSe
A method using a source consisting of Mg, a source consisting of MgS, a source consisting of Mg and a source consisting of Zn, a method using a source consisting of ZnS, a source consisting of MgSe, a source consisting of MgS, a source consisting of Mg and a source consisting of Zn, Method using a source made of ZnS, a source made of MgSe, a source made of Mg and a source made of Zn, a source made of ZnS, a source made of MgSe, a source made of MgS and a source made of Mg and Zn
There is a method using a source made of, or a source made of ZnS, a source made of MgSe, a source made of MgS, and a source made of Mg.

In each of the above embodiments, a GaAs substrate is used, but a II-VI group compound semiconductor such as ZnSe or a G-type compound semiconductor is used.
A semiconductor substrate or the like made of another III-V group compound semiconductor such as aP can be appropriately used. Of course, the substrate according to the present invention includes, of course, one in which a semiconductor layer is laminated on the substrate, and may be doped to have conductivity.

Further, for the II-VI group single crystal layer, it is of course possible to appropriately use other methods other than the method of irradiating nitrogen molecules with active nitrogen at the time of crystal growth to make them p-type by high frequency, for example, simply irradiating nitrogen molecules. Then, nitrogen may be doped as an acceptor to make it p-type.

Of course, an n-type II-VI group single crystal layer having good crystallinity and high conductivity is also possible, for example, ZnC.
It is possible to realize good crystallinity and high conductivity by irradiating a gas obtained by thermally decomposing 1, CdCl or the like and doping chlorine as a donor to make it n-type.

[0057]

EFFECTS OF THE INVENTION In the production method of the present invention, since the group VI element which easily forms high-order molecules is supplied by the source composed of the II-VI group compound and the substrate temperature is lower than 200 ° C., -Group IV gas evaporated from a source composed of group VI compound has a large sticking coefficient and is mainly composed of diatomic molecules that easily migrate on the substrate surface.
Thus, in addition to the small mass of the constituents of the group VI gas (main component: diatomic molecule) and the group II gas (main component: atom) vaporized from the source composed of the II-VI group compound, the above source Must be heated above the vaporization temperature of the II-VI compound, which results in the vaporization of the Group II gas and VI from the source.
Since the group gas is irradiated onto the substrate with a very large kinetic energy, migration is improved.
And at this time, since the substrate temperature is less than 200 ° C.,
Re-evaporation after migration can be suppressed, good crystallinity can be secured, and self-compensation effect can be suppressed to realize high conductivity. Moreover, no special device for cracking is used.

[Brief description of drawings]

FIG. 1 is a schematic structural diagram of an MBE device according to an embodiment of the present invention.

FIG. 2 is a diagram showing a relationship between a substrate temperature and a growth rate.

FIG. 3 is a diagram showing a relationship between a substrate temperature and an X-ray rocking curve half width.

FIG. 4 is a diagram showing a relationship between an acceptor concentration and a nitrogen atom concentration of a p-type ZnSe single crystal layer.

FIG. 5 is a diagram showing a relationship between an acceptor concentration of a p-type ZnSe single crystal layer and a substrate temperature.

[Explanation of symbols]

 4 Substrate (object to be irradiated) 5 ZnSe cell 6 Nitrogen gas cell

Claims (14)

[Claims] 1. A method for producing a II-VI semiconductor crystal, comprising producing a II-VI semiconductor crystal on a substrate by the MBE method, wherein all the constituent elements of the II-VI semiconductor crystal are used as a source for the VI element. Alternatively, a method for producing a II-VI group semiconductor crystal is characterized in that a II-VI group compound composed of 1 part is used and the substrate temperature is set to less than 200 ° C. 2. The source for a group II element, which is composed of a single group II element constituting the II-VI semiconductor crystal, is used as the source, in addition to the source for the group VI element. Method for producing II-VI semiconductor crystal. 3. In a method for producing a II-VI group semiconductor crystal for producing a ZnSe crystal on a substrate by the MBE method, ZnSe or ZnSe and Zn is used as a source, and the substrate temperature is lower than 200 ° C. Characterized by
Method for producing II-VI semiconductor crystal. 4. A method for producing a II-VI group semiconductor crystal for producing a ZnSSe crystal on a substrate by the MBE method, wherein ZnS and ZnSe or Zn, ZnS and ZnSe are used as a source, and the substrate temperature is 200 ° C. The method for producing a II-VI group semiconductor crystal is characterized by: 5. A method for producing a II-VI group semiconductor crystal, wherein a ZnMgSe crystal is produced on a substrate by the MBE method,
As a source, ZnSe and MgSe, ZnSe and Mg,
ZnSe and MgSe and Zn, ZnSe and MgSe and M
g, ZnSe, MgSe, Zn and Mg, MgSe and Zn
And Mg or Zn and MgSe are used, and the substrate temperature is set to less than 200 ° C., a method for producing a II-VI group semiconductor crystal. 6. A method for producing a II-VI group semiconductor crystal, which comprises producing a ZnSeTe crystal on a substrate by the MBE method,
ZnTe and ZnSe or Zn and Zn as sources
A method for producing a II-VI group semiconductor crystal, characterized in that Se and ZnTe are used and the substrate temperature is set to less than 200 ° C. 7. A method for producing a II-VI group semiconductor crystal in which a MgZnSSe crystal is produced on a substrate by an MBE method, wherein ZnSe and MgS, ZnSe and Mg are used as sources.
Se and ZnS, ZnSe and MgS and ZnS, ZnSe and ZnS and Mg, ZnSe and MgSe and MgS, ZnSe
And MgS and Zn, ZnSe and MgS and Mg, ZnSe and ZnS and MgSe and MgS, ZnSe and ZnS and MgS
e and Zn, ZnSe and ZnS, MgSe and Mg, ZnS
e, ZnS, MgS, Zn, ZnSe, ZnS, MgS
And Mg, ZnSe and ZnS, Mg and Zn, ZnSe and M
gSe and MgS and Zn, ZnSe and MgSe and MgS and Mg, ZnSe and MgS and Mg and Zn, ZnSe and Zn
S, MgSe, MgS and Zn, ZnSe, ZnS and Mg
Se, MgS and Mg, ZnSe, ZnS, MgSe and M
g and Zn, ZnSe and ZnS, MgS, Mg and Zn, Z
nSe, MgS, MgSe, Mg, Zn, ZnSe and Z
nS, MgSe, MgS, Mg, Zn, ZnS and MgS
e, ZnS, MgSe and MgS, ZnS, MgSe and Z
n, ZnS, MgSe and Mg, MgSe, MgS and Z
n, ZnS, MgSe, MgS and Zn, MgSe and Mg
S, Mg and Zn, ZnS, MgSe, MgS, Mg and Z
n, ZnS, MgSe, MgS, Mg, Zn, ZnS, MgSe, Mg, Zn, or ZnS, MgSe, MgS
And Mg are used, and the substrate temperature is 200 ° C.
The method for producing a II-VI group semiconductor crystal is characterized by: 8. The growth rate of the II-VI semiconductor crystal is
The method for producing a II-VI group semiconductor crystal according to claim 1, 2, 3, 4, 5, 6, or 7, characterized in that it is greater than 1.4 µm / hr. 9. The growth rate of the II-VI semiconductor crystal is
It is 1.8 μm / hr or less, claim 1,
A method for producing a II-VI group semiconductor crystal according to 2, 3, 4, 5, 6, 7, or 8. 10. The substrate temperature is 100 ° C. or higher, and the substrate temperature is 1, 2, 3, 4, 5, 6, 7,
8. The method for producing a II-VI group semiconductor crystal according to 8 or 9. 11. The method for producing a II-VI group semiconductor crystal according to claim 10, wherein the substrate temperature is 150 ° C. or higher. 12. The substrate temperature is 180 ° C. or lower, 1, 2, 3, 4, 5, 6, 7,
8. The method for producing a II-VI group semiconductor crystal according to 8, 9, 10, or 11. 13. The method according to claim 1, wherein an acceptor or a donor is doped during the growth of the II-VI semiconductor crystal.
11. The method for producing a II-VI group semiconductor crystal according to 11 or 12. 14. The II-VI semiconductor crystal is grown into p-type by irradiating nitrogen molecules or active nitrogen during the growth of the II-VI semiconductor crystal. 4,
The method for producing a II-VI group semiconductor crystal according to 5, 6, 7, 8, 9, 10, 11, 12, or 13.