JPH09219163A - Wiring forming method, matrix wiring formed by the method, electron source manufacturing method, electron source and image display device - Google Patents

Abstract

(57) Abstract: Matrix wiring can be formed with a simple structure and process, the film quality as wiring is improved, oxidation resistance and corrosion resistance are improved, electrical reliability is improved, and wiring resistance is improved. (EN) Provided is a high-definition image forming apparatus which can realize a low resistance and prevent the occurrence of pixel unevenness due to an increase in wiring resistance. SOLUTION: The row-direction wiring and the column-direction wiring are formed by using a paste in which fine particles of a conductive material are mixed with a glass binder containing lead oxide as a main component in the wiring material of the first layer, and the wiring material of the second layer is used. Is formed by using a paste in which an organic solvent and a resin are mixed with an organic metal compound, and the wiring material of the first layer and the second layer has a two-layer structure, an alloy or a mixed state. It is characterized by doing.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer thick film circuit, and more particularly to a method for forming a matrix wiring, a method for manufacturing a matrix wiring, an electron source, an electron source and an image display device.

[0002]

2. Description of the Related Art Conventionally, there are known two types of electron-emitting devices, which are roughly classified into a thermoelectron-emitting device and a cold cathode electron-emitting device. The cold cathode electron emission device includes a field emission type (hereinafter referred to as “FE type”), a metal / insulating layer / metal type (hereinafter referred to as “MIM type”), a surface conduction type electron emission device, and the like. As an example of the FE type, W. P. Dyke
& W. W. Doran "Field Emissio"
n ", Advance in Electron Phy
sics, 8, 89 (1956) or C.I. A. Sp
indt “Physical Properties
of thin-film field emissi
on cathodes with mollybden
ium cones ", J. Appl. Phys., 4
7, 5248 (1976) and the like are known. For the MIM type, C.I. A. Mead, "Opera
Tion of Tunnel-Emission D
devices ", J. Appl. Phys., 32,6.
46 (1961) and the like are known.

As an example of the surface conduction electron-emitting device type,
M. I. Elinson, Radio Eng. Ele
ctron Phys. , 10, 1290 (1965)
Etc. have been disclosed. In the surface conduction electron-emitting device, electrons are emitted by passing a current through a thin film of a small area formed on a substrate in parallel with the film surface. The surface conduction type electron-emitting device may be formed of Sn by Elinson et al.
One using an O ₂ thin film, one using an Au thin film [G. Di
ttmer: Thin Solid Films, 9,
317 (1972)], by In ₂ O ₃ / SnO ₂ thin film [M. Hartwell and C.I. G. FIG. Fon
stad: IEEE Trans. ED Conf. ,
519 (1975)], by a carbon thin film [Hiraki Araki et al .: Vacuum, Vol. 26, No. 1, p. 22 (198).
3)] etc. have been reported. As a typical example of these surface conduction electron-emitting devices, the above-mentioned M. The Hartwell device structure is schematically shown in FIG. In FIG. 1, reference numeral 1 denotes a substrate. A conductive thin film 4 is composed of a metal oxide thin film or the like formed by sputtering in an H-shaped pattern, and the electron emitting portion 3 is formed by an energization process called energization forming described later. The element electrode spacing L in the figure is 0.5 to 1
[Mm] and W'are set to 0.1 [mm]. Conventionally, in these surface conduction electron-emitting devices, it is general that the electron-emitting portion 3 is formed in advance by conducting an energization process called energization forming on the conductive thin film 4 before the electron emission. That is, the energization forming means that a direct current voltage or a very slow rising voltage is applied to both ends of the electroconductive thin film 4 to energize the electroconductive thin film 4 to locally destroy, deform or alter the electroconductive thin film to make it into an electrically high resistance state. That is, the electron-emitting device portion 3 is formed. The electron emission unit 3
A crack is generated in a part of the conductive thin film 4, and electrons are emitted from the vicinity of the crack. The surface conduction electron-emitting device that has been subjected to the energization forming process is one in which a voltage is applied to the conductive thin film 4 and a current is passed through the device so that electrons are emitted from the electron-emitting portion 3 described above.

Since the above-mentioned surface conduction electron-emitting device has a simple structure and is easy to manufacture, it has an advantage that many devices can be arrayed and formed over a large area. Therefore, applied research on charged beam sources, display devices, and the like, which make use of this feature, has been conducted. As an example in which a large number of surface-conduction type electron-emitting devices are formed in an array, as will be described later, surface-conduction type electron-emitting devices are arranged in parallel called a ladder arrangement, and both ends of each device are wired (also called common wiring). There is an electron source in which a large number of connected lines are arranged in a matrix (for example, Japanese Patent Laid-Open No. 64-03).
1332, JP-A-1-283749, 2-257552.
etc). Further, in image forming apparatuses such as display devices, in particular, flat-panel display devices using liquid crystals have become widespread in place of CRTs in recent years, but there are problems such as having a backlight because they are not self-luminous. Therefore, development of a self-luminous display device has been desired. As a self-luminous display device, a surface conduction emission image forming device, an image forming device, an image forming device, an image forming device, which is a display device in which a phosphor that emits visible light is combined with electrons emitted from an electron source in which a large number of elements are arranged. There is a forming device. (For example, U
However, in order to increase the area of the surface conduction electron-emitting device as described above as an image forming apparatus, there are the following problems. When processing an electrode or a wiring pattern in the manufacturing process of the surface conduction electron-emitting device, a metal thin film of an electrode and a wiring material is formed on a substrate, and this is subjected to pattern processing using ordinary photolithography and etching techniques. Then, electrodes and wiring patterns are formed. However, for example, in the case of manufacturing on a large substrate of 40 cm square or more by photolithography and etching technology, large equipment including a vapor deposition device, an exposure device, an etching device and the like are required, and not only enormous cost is required, but also the substrate is When the size is increased, it is difficult to increase the size of the manufacturing apparatus itself, which causes a problem in manufacturing method or cost. In addition, the structure becomes complicated due to the increase in the number of electrodes and the increase in the number of wirings due to the large area. Further, there has been a problem that defects such as disconnection and short circuit are likely to occur due to increase or complexity of the manufacturing process and accompanying this, resulting in a decrease in yield.

[0005]

SUMMARY OF THE INVENTION The present invention provides a wiring forming method, a matrix wiring formed by the method, a method of manufacturing an electron source, an electron source and an image display device which solve the above-mentioned problems of the prior art. With the goal.

[0006]

The above object is achieved by the following means.

That is, according to the present invention, in the method of forming a matrix wiring formed by intersecting a plurality of row-direction wirings and a plurality of column-direction wirings, the row-direction wirings and the column-direction wirings are the first layer wiring material. Using a paste in which a fine powder of a conductive material is mixed in a glass binder containing lead oxide as a main component, and using a paste in which an organic solvent and a resin are mixed with an organic metal compound in a second layer wiring material, The present invention proposes a method of forming a wiring, wherein the wiring material of the first layer and the wiring material of the second layer have a two-layer structure, an alloy, or a mixed state. The first-layer wiring material or the second-layer wiring material of the row-direction wiring and the column-direction wiring is separately or simultaneously fired to form the row-direction wiring and the column-direction wiring. The first layer and the second layer wiring material is composed of a dissimilar metal material, or that the first layer and the second layer wiring material is made of the same metal material, respectively.

According to the present invention, an electron source having a surface conduction electron-emitting device including a pair of device electrodes is formed in the row direction by using the matrix wiring formed by the above method and the method for forming the matrix wiring. A plurality of electron sources are arranged on a two-dimensional plane so as to be energized to the electron sources by arranging the wirings and the column direction wirings at orthogonal positions and sequentially selecting one or a plurality of sets of the wirings. The present invention proposes a method of manufacturing an electron source by a simple matrix method, which is characterized in that the surface-conduction electron-emitting devices are connected to the row-direction wirings and the column-direction wirings. Through the use of a printing method for forming each layer. Furthermore, the present invention proposes an image display device comprising an electron source manufactured by the above manufacturing method, the matrix wiring, and the electron source, wherein the electron source emits electrons. It includes a surface conduction electron-emitting device in which an electron-emitting portion is formed by subjecting the portion-forming thin film to an electric current treatment called forming.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.

FIG. 1 shows a top view of a typical element structure of an image forming apparatus composed of an electron source of the present invention. FIG.
(A)-(g) shows the top view showing the manufacturing process of this invention.

FIGS. 2A to 2G show an example in which 3 × 3 electron-emitting devices, that is, a total of 9 electron-emitting devices are arranged in a matrix on a substrate (not shown). In the figure, 11 and 12 are a pair of element electrodes, 13 is the first layer wiring of the X-direction wiring, and 14 is X.
Second-direction wiring of the direction wiring, 15 is an interlayer insulating film between the X-direction wiring and the Y-direction wiring having an opening on the concave portion, 16 is a first-layer wiring of the Y-direction wiring, and 17 is a Y-direction wiring. The second layer wiring, 18 is a film for forming an electron emitting portion.

First, a pair of element electrodes 11 and 12 is formed by printing and baking the element electrodes on a substrate that has been washed in advance. (FIG. 2A) This device electrode is provided in order to improve the ohmic contact between the electron emission portion thin film and the wiring. Generally, the electron emission thin film is a film that is extremely thin compared to the conductor layer for wiring, so it has "wetness" and "step retention".
It is provided in order to avoid such problems. If the conductor layer for wiring is formed of a thin film by, for example, a sputtering method, it is not always necessary to provide it, and it can be formed at the same time as the wiring conductor. The device electrodes are formed by vapor deposition, sputtering, plasma CVD.
There is a method using a vacuum system such as a method or a thick film printing method in which a thick film paste in which a metal component and a glass component are mixed with a catalyst is printed and fired.

In order to maximize the effects of the present invention, it is possible to shorten the process most by using the thick film printing method which does not require the photolithography process. However, it is desirable that the device electrode film thickness in the vicinity of the electron emission portion is thin. Therefore, when the thick film printing method is used, it is desirable to use a MOD paste composed of an organometallic compound as a paste to be used at that time. Of course, other film forming methods may be used, and the constituent material is not particularly limited as long as it is a material having electrical conductivity.

Next, the wiring 13 of the first layer of the X-direction wiring is formed. (FIG. 2B) At this time, the wiring 13 of the first layer of the X-direction wiring is connected to the element electrode 12 at the same time when the wiring 13 of the first layer of the X-direction wiring is formed. Incidentally, in the method of forming the wiring layer, unlike the element electrode portion, the thicker the film thickness, the more the electric resistance can be reduced, which is advantageous. Therefore,
It is suitable to use a thick film printing method using a thick film paste, which can obtain a relatively thick film as a single layer. Of course, thin film wiring can be applied, but it is disadvantageous because many layers must be stacked to increase the film thickness and time is required.

Subsequently, the wiring 14 of the second layer of the X-direction wiring, which is a feature of the present invention, is formed by using a MOD paste composed of an organometallic compound. The wiring 14 of the second layer is formed so as to overlap the wiring pattern of the first layer formed by the thick film paste. (FIG. 2C) Next, the interlayer insulating film 15 is formed. (FIG. 2D) The interlayer insulating film 14 is formed in a strip shape, and the device electrode 11
A concave-shaped opening is provided at the intersection with and the element electrode 11 is exposed at that portion. In addition, this interlayer insulating film 15
1 is set wider than the width of the Y-direction wiring in the next step, as is apparent from FIG. The reason for this is to prevent a short circuit at the intersection of the X-direction wiring and the Y-direction. The constituent material of the interlayer insulating film 14 may be any material as long as it can maintain the insulating property, and is, for example, a SiO 2 thin film or a film made of a thick film paste containing no metal component.

Next, the wiring 16 of the first layer of the Y-direction wiring is formed. (FIG. 2E) At this time, the wiring 16 of the first layer of the Y-direction wiring is simultaneously formed with the wiring 16 of the first layer of the Y-direction wiring connected to the element electrode 11 through the concave opening of the interlayer insulating film 14. It is formed. As a forming method, the same method as the wiring 13 of the first layer of the X-direction wiring can be applied.

Next, the wiring 14 of the second layer of the X-direction wiring
Similar to the formation, the second-layer wiring 17 of the Y-direction wiring, which is a feature of the present invention, is formed. (FIG. 2 (f)) As a forming method, the same method as that for the wiring 14 in the second layer of the X-direction wiring can be applied.

Finally, the electron emission portion forming thin film 18 is formed to complete the surface conduction electron-emitting devices (3 × 3, 9 in total) for the electron source having a simple matrix structure. (Figure 2
(G)) As the film forming method and the forming method of the electron emitting portion forming thin film 18 (surface conduction electron-emitting device), the conventional method can be applied as it is.

Although only the 9-element portion is shown in the figure,
By forming a plurality of these at the same time, the structure of the electron source substrate by the simple matrix method is completed.

In the figure, the matrix wiring is X, Y.
The bidirectional wiring has a two-layer structure including the first-layer wiring and the second-layer wiring, but the number of wiring layers is not particularly limited, and the first-layer wiring and the first-layer wiring, which are the features of the present invention, are not particularly limited. Based on the two-layer structure of the second-layer wiring, 3 for each wiring in both directions.
Layers or four layers may be stacked, the thickness can be increased depending on the number of wiring layers, and an effect as low resistance wiring excellent in oxidation resistance and corrosion resistance is produced. Further, the number of wiring layers of the X-direction wiring and the Y-direction wiring does not necessarily have to be the same, and matrix wiring having a configuration in which the number of layers of each wiring is different may be formed. In this case, the combination of different total wiring numbers is based on the two-layer structure of the first layer wiring and the second layer wiring, which is the feature of the present invention, and the number of each layer is, for example, three layers. 4 layers, 2 layers and 4 layers,
The number of layers of the X-direction wiring and the Y-direction wiring may be reversed.

Subsequently, as a method of forming the wiring of the first layer and the wiring of the second layer of the matrix wiring, printing and baking after drying may be performed separately, respectively. Printing and drying of the layers may be performed, respectively, and finally firing may be performed simultaneously. The wiring material and type are not limited. For example, the wiring material for the first layer may be a thick-film paste and may be a conductive material, and the wiring material for the second layer may be a MOD paste composed of an organometallic compound. Any material can be used. The point is to set it according to the purpose and specifications.

The dimensions and thickness of the interlayer insulating film are not particularly limited as long as they are sufficiently insulated in terms of electric driving. For example, when an insulating glass paste is used as the interlayer insulating film, it can be formed by a screen printing method or a dip coating method.

The electron source by the matrix wiring of the present invention having the above-described structure and the image forming apparatus having the electron source can be realized with a simple structure and the matrix wiring can be realized easily, and the yield is improved. Can be made. In addition, the quality of the film as the wiring can be improved, the oxidation resistance and the corrosion resistance can be improved, and the electrical reliability can be improved. Furthermore, the wiring resistance can be reduced, and it is possible to prevent the occurrence of image unevenness due to an increase in wiring resistance, which is a problem when increasing the area, and it is possible to obtain a high-definition image forming apparatus. it can.

Further, according to this structure, the connection patterns of the X-direction wiring and the Y-direction wiring to the device electrodes 11 and 12 are formed in the same layer and can be formed simultaneously, so that they must be formed independently. Therefore, the number of steps can be reduced.

Further, since the area dominated by the wiring is reduced and the structure on the surface of the substrate is simplified, a higher density wiring can be realized as compared with the conventional one, so that the number of pixels per unit area is reduced. It is possible to increase.

According to the structure and the forming method of the present invention,
Among image forming apparatuses, in a simple matrix type image forming apparatus using surface conduction electron-emitting devices, a large number of elements can be easily arranged in an XY matrix,
A large-screen image forming apparatus can be provided. In addition, particularly in a forming method using a thick film printing method, it brings an excellent effect.

The basic structure of the surface conduction electron-emitting device of the present invention is roughly classified into a planar type and a vertical type.
First, the planar surface conduction electron-emitting device will be described. FIG. 6 is a schematic view showing the structure of the flat surface conduction electron-emitting device of the present invention, FIG. 6 (a) is a plan view, and FIG.
(B) is a sectional view. In FIG. 6, 1 is a substrate, 5 and 6
Is an element electrode, 4 is a conductive thin film, and 5 is an electron emitting portion.
As the substrate 1, quartz glass, glass having a reduced content of impurities such as Na, soda-lime glass, and S by a sputtering method or the like are used.
A glass substrate on which iO ₂ is deposited, a ceramic substrate such as alumina, or the like can be used. As the material of the device electrodes 5 and 6 facing each other, a general conductive material can be used, and Ni, Cr, Au, Mo, W, Pt, Ti, A can be used.
Metals or alloys such as 1, Cu, Pd and Pd, As, A
g, Au, printed conductors composed of RuO _2, metal or metal oxide such as Pd-Ag and glass, etc., In ₂ O ₃ -S
It can be selected from transparent conductors such as nO ₂ and semiconductor conductor materials such as polysilicon. The element electrode interval L, the element electrode length W, the shape of the conductive thin film 4 and the like are designed in consideration of the applied form and the like. The element electrode spacing L is preferably in the range of several thousand [angstrom] to several hundred [μm], and more preferably in the range of 1 [μm] to 100 [μm] in consideration of the voltage applied between the element electrodes. Is. The device electrode length W is in the range of several [μm] to several hundred [μm] in consideration of the resistance value of the electrodes and the electron emission characteristics.
The film thickness d of the device electrodes 5 and 6 is in the range of 100 [angstrom] to 1 [μm]. In addition to the structure shown in FIG. 6, the conductive thin film 4 and the opposing device electrodes 5 and 6 may be stacked in this order on the substrate 1.

It is preferable to use a fine particle film composed of fine particles for the conductive thin film 4 in order to obtain good electron emission characteristics. The film thickness is appropriately set in consideration of the step coverage to the device electrodes 5 and 6, the resistance value between the device electrodes 5 and 6 and the forming conditions described later, but normally, it is from several angstroms to several thousand angstroms. ], And more preferably 10 [angstrom] to 500 [angstrom]. The resistance value is such that Rs is from 1 × 10 + 2 to 1 ×
The value is 10 + 7 [Ω]. Rs is the resistance R of a thin film having a thickness of t, a width of w and a length of 1, and R = Rs (1 / w)
When the resistivity of the thin film material is ρ, it is expressed by Rs = ρ / t. In the present specification, the forming process will be described by taking the energization process as an example, but the forming process is not limited to this.
Any method may be used as long as it is a method of causing a crack in the film to form a high resistance state.

The material forming the conductive thin film 4 is Pd, P
t, Ru, Ag, Au, Ti, In, Cu, Cr, F
metals such as e, Zn, Sn, Ta, W, Pb, PdO, S
Oxides such as nO ₂ , In ₂ O ₃ , PbO and Sb ₂ O ₃ , Hf
Borides of B ₂ , ZrB ₂ , LaB ₆ , CeB, ₆ YB ₄ , GdB _4, etc., TiC, ZrC, HfC, TaC, SiC, W
Carbides such as C, nitrides such as TiN, ZrN and HfN, S
It is appropriately selected from semiconductors such as i and Ge and carbon. The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure has a state in which the fine particles are individually dispersed and arranged, or a state in which the fine particles are adjacent to each other or overlap each other (some fine particles are aggregated, (Including the case where an island structure is formed). The particle size of the fine particles is in the range of several [angstrom] to 1 [μm], preferably 10 [angstrom] to 200.
It is in the range of [Angstrom]. The electron emission unit 3 is
It is composed of a crack having a high resistance formed in a part of the conductive thin film 4, and depends on the film thickness, film quality, material of the conductive thin film 4 and a method such as energization forming described later. Inside the electron emission part 3, 1000 [angstrom]
In some cases, conductive fine particles having the following particle sizes are included. The conductive fine particles contain some or all of the elements of the material constituting the conductive thin film 4. The electron emitting portion 3 and the conductive thin film 4 in the vicinity thereof may contain carbon or a carbon compound.

Next, a vertical surface conduction electron-emitting device will be described. FIG. 7 is a schematic view showing an example of the surface conduction electron-emitting device vertical surface conduction electron-emitting device of the present invention.

In FIG. 7, the same parts as those shown in FIG. 6 are designated by the same reference numerals as those shown in FIG.
7 is a step forming portion. Substrate 1, device electrodes 5 and 6,
The conductive thin film 4 and the electron emitting portion 3 can be made of the same material as that of the above-mentioned plane type surface conduction electron emitting device. The step forming portion 7 can be made of an insulating material such as SiO ₂ formed by a vacuum deposition method, a printing method, a sputtering method or the like. The film thickness of the step forming portion 71 corresponds to the device electrode distance L of the planar surface conduction electron-emitting device described above, and can be set in the range of several thousand [angstrom] to several tens [μm]. This film thickness is set in consideration of the manufacturing method of the step forming portion and the voltage applied between the element electrodes,
The range of several hundred [angstrom] to several [μm] is preferable. The conductive thin film 4 is laminated on the device electrodes 5 and 6 after the device electrodes 5 and 6 and the step forming portion 71 are formed. Although the electron emitting portion 3 is formed in the step forming portion 7 in FIG. 7, it depends on the forming conditions, forming conditions, etc.
The shape and position are not limited to this. There are various methods for manufacturing the above-mentioned surface conduction electron-emitting device, and one example thereof is schematically shown in FIG. Hereinafter, an example of the manufacturing method will be described with reference to FIGS. 6 and 8.
Also in FIG. 8, the same parts as those shown in FIG.
The same reference numerals as those given to 1) The substrate 1 is thoroughly washed with a detergent, pure water, an organic solvent, etc., and after the element electrode material is deposited by a vacuum deposition method, a sputtering method, etc., the element electrode 5 is formed on the substrate 1 using, for example, a photolithography technique. , 6 are formed (FIG. 8A). 2) An organic metal solution is applied to the substrate 1 provided with the device electrodes 5 and 6 to form an organic metal thin film. As the organic metal solution, a solution of an organic metal compound containing the metal of the material of the conductive film 4 as a main element can be used. The organic metal thin film is heated and baked, and patterned by lift-off, etching, etc. to form the conductive thin film 4 (FIG. 8).
(B)). Here, the method of applying the organic metal solution has been described as an example, but the method of forming the conductive thin film 4 is not limited to this, and a vacuum deposition method, a sputtering method, a chemical vapor deposition method,
It is also possible to use a dispersion coating method, a dipping method, a spinner method, or the like. 3) Subsequently, a forming process is performed. As an example of the forming processing method, a method by an energization processing will be described. When electricity is applied between the device electrodes 5 and 6 by using a power source (not shown), the electron emitting portion 3 having a changed structure is formed at the site of the conductive thin film 4 (FIG. 8C). According to the energization forming, a site having a structural change such as local destruction, deformation or alteration is formed in the conductive thin film 4. This portion becomes the electron emitting portion 3. FIG. 9 shows an example of the voltage waveform of energization forming.

The voltage waveform is preferably a pulse waveform. For this, the method shown in FIG. 9 (a) in which a pulse whose pulse peak value is a constant voltage is continuously applied and the method in which a voltage pulse is applied while increasing the pulse peak value are shown in FIG. 9 (b). There is a technique. In FIG. 9A, T1 and T2 are the pulse width and pulse interval of the voltage waveform. Normally, T1 is 1 [μ
s] to 10 [ms], T2 is 10 [μs] to 100
It is set within the range of [ms]. The peak value of the triangular wave (peak voltage during energization forming) is appropriately selected according to the form of the surface conduction electron-emitting device. Under these conditions,
For example, the voltage is applied for several seconds to several tens minutes. The pulse waveform is not limited to a triangular wave, and a desired waveform such as a rectangular wave can be adopted. T1 in FIG. 9B
And T2 can be similar to those shown in FIG. 9 (a). The peak value of the triangular wave (peak voltage during energization forming) can be increased in steps of, for example, 0.1 [V]. The end of the energization forming process can be detected by applying a voltage that does not locally destroy or deform the conductive thin film 4 during the pulse interval T2, and measuring the current. For example, the device current flowing by applying a voltage of about 0.1 [V] is measured, the resistance value is calculated, and 1 [MΩ]
When the above resistance is exhibited, the energization forming is terminated. 4) It is preferable to perform activation processing on the element that has completed the forming. By performing the activation process, the device current I
f, the emission current Ie changes remarkably. The activation treatment can be performed, for example, in an atmosphere containing a gas of an organic substance, by repeating application of a pulse, as in the energization forming. This atmosphere can be formed by using an organic gas remaining in the atmosphere when the inside of the vacuum vessel is evacuated using, for example, an oil diffusion pump or a rotary pump, or is sufficiently evacuated once by an ion pump or the like. It can also be obtained by introducing a gas of an appropriate organic substance into a vacuum. At this time, the preferable gas pressure of the organic substance is
Since it varies depending on the form of application, the shape of the vacuum container, the type of organic material, etc., it is appropriately set depending on the case. Suitable organic substances include alkanes, alkenes, alkyne aliphatic hydrocarbons, aromatic hydrocarbons, alcohols,
Examples thereof include aldehydes, ketones, amines, phenols, carboxylic acids, organic acids such as sulfonic acids, and the like. Specifically, methane, ethane, propane and the like CnH
Saturated hydrocarbon represented by 2n + 2, unsaturated hydrocarbon represented by the composition formula of CnH2n such as ethylene and propylene,
Benzene, toluene, methanol, ethanol, formaldehyde, acetaldehyde, acetone, methyl ethyl ketone, methyl amine, ethyl amine, phenol, formic acid, acetic acid, propionic acid and the like can be used. By this treatment, carbon or a carbon compound is deposited on the device from the organic substances existing in the atmosphere, and the device current If and the emission current Ie change remarkably. The termination of the activation process is determined while measuring the device current If and the emission current Ie. The pulse width, pulse interval, pulse crest value, and the like are set as appropriate. Carbon or a carbon compound means HOPG (High
ly Oriented Pyrolytic Gra
PG), PG (Pyrolytic Graph)
and graphite such as GC (Glassy Carbon) (HOPG is a graphite having a nearly perfect crystal structure, PG is a graphite having a crystal grain of about 200 [angstroms] and the crystal structure is slightly disordered, and GC is a crystal grain. The crystal structure is further disturbed at about 20 angstroms.) And amorphous carbon (amorphous carbon and carbon containing a mixture of amorphous carbon and graphite fine crystals), and the film thickness is It is preferably 500 [angstrom] or less, and more preferably 300 [angstrom] or less. 5) The electron-emitting device obtained through the activation process is preferably subjected to stabilization treatment. The partial pressure of organic materials in the process vacuum _{chamber, 1 × 10 - 8 [torr} ] or less, preferably 1 × 10 _- 10 [torr] is good performed below. The pressure in the vacuum _vessel, 10 _{- 6.5~10} - 7 [t
orr] are preferred, especially 1 × 10 _- preferably 8 [torr] or less. It is preferable to use a vacuum exhaust device that does not use oil so that the oil generated from the device does not affect the characteristics of the element.
Specifically, a vacuum exhaust device such as a sorption pump or an ion pump can be used. Further, when exhausting the inside of the vacuum container, it is preferable to heat the entire vacuum container so that the organic substance molecules adsorbed on the inner wall of the vacuum container and the electron-emitting device can be easily exhausted. The vacuum evacuation condition in the heated state at this time is preferably 80 to 200 ° C. for 5 hours or more,
The conditions are not particularly limited to this, but may vary depending on various conditions such as the size and shape of the vacuum container and the configuration of the electron-emitting device. The partial pressure of the organic substance is measured by measuring the partial pressure of the organic molecule having a mass number of 10 to 200 and having carbon and hydrogen as the main components by a mass spectrometer and integrating the partial pressures.

It is preferable to maintain the atmosphere at the end of the above-mentioned stabilization process as the atmosphere at the time of driving after the stabilization step, but the present invention is not limited to this, and if the organic substances are sufficiently removed, Even if the degree of vacuum itself is lowered to some extent, it is possible to maintain sufficiently stable characteristics. By adopting such a vacuum atmosphere, the deposition of new carbon or carbon compound can be suppressed, and as a result, the device current If and the emission current I
e becomes stable. Various arrangements of electron-emitting devices can be adopted. As an example, a large number of electron-emitting devices arranged in parallel are connected at both ends, and a large number of rows of electron-emitting devices are arranged (referred to as a row direction), and in a direction orthogonal to this wiring (referred to as a column direction). There is a ladder-like arrangement in which electrons from the electron-emitting device are controlled and driven by a control electrode (also called a grid) arranged above the electron-emitting device. Separately, a plurality of electron-emitting devices are arranged in a matrix in the X and Y directions, and one of the electrodes of the plurality of electron-emitting devices arranged in the same row is commonly connected to a wiring in the X direction. One example is one in which the other of the electrodes of a plurality of electron-emitting devices arranged in the same column is commonly connected to a wiring in the Y direction. This is a so-called simple matrix arrangement. First, the simple matrix arrangement will be described in detail below. An electron source substrate obtained by arranging a plurality of electron-emitting devices of the present invention in a matrix will be described with reference to FIG. In FIG. 10, 71 is an electron source substrate, 72 is an X-direction wiring, and 73 is a Y-direction wiring. 74 is a surface conduction electron-emitting device, and 75 is a connection. Incidentally, the surface conduction electron-emitting device 74 may be either the above-mentioned flat type or vertical type. The m number of X-direction wirings 72 are Dx1, Dx2 ,. . . It is made of Dxm and can be made of a conductive metal or the like formed by a vacuum deposition method, a printing method, a sputtering method, or the like. The material, thickness, and width of the wiring are appropriately designed. The Y-direction wiring 73 is
Dy1, Dy2. . . It consists of Dyn's n wires and X
It is formed similarly to the direction wiring 72. An interlayer insulating layer (not shown) is provided between the m X-direction wirings 72 and the n Y-direction wirings 73 to electrically isolate the two (m and n are both positive). Integer).

The interlayer insulating layer (not shown) is composed of SiO ₂ or the like formed by a vacuum deposition method, a printing method, a sputtering method or the like. For example, it is formed in a desired shape on the entire surface or a part of the substrate 71 on which the X-direction wiring 72 is formed, and in particular, the film thickness, material, and so on to withstand the potential difference at the intersection of the X-direction wiring 72 and the Y-direction wiring 73. The manufacturing method is set. X direction wiring 72 and Y
The directional wirings 73 are respectively drawn out as external terminals. A pair of electrodes (not shown) constituting the surface conduction electron-emitting device 74 are electrically connected to the m X-directional wires 72 and the n Y-directional wires 73 by a connection 75 made of a conductive metal or the like. I have. The material forming the wiring 72 and the wiring 73, the material forming the connection 75, and the material forming the pair of element electrodes may have some or all of the same or different constituent elements. These materials are appropriately selected, for example, from the above-described materials for the device electrodes.
When the material forming the element electrode is the same as the wiring material, the wiring connected to the element electrode can also be called an element electrode. The X-direction wiring 72 is connected to a scan signal applying means (not shown) for applying a scan signal for selecting a row of the surface conduction electron-emitting devices 74 arranged in the X direction. On the other hand, the Y-direction wiring 73 is connected with a modulation signal generating means (not shown) for modulating each column of the surface conduction electron-emitting devices 74 arranged in the Y direction according to an input signal. The driving voltage applied to each electron-emitting device is supplied as a difference voltage between the scanning signal and the modulation signal applied to the device. In the above configuration, individual elements can be selected and driven independently using a simple matrix wiring. An image forming apparatus configured by using an electron source having such a simple matrix arrangement will be described with reference to FIGS. 11, 12 and 13. 11 is a schematic diagram showing an example of a display panel of the image forming apparatus, and FIG. 12 is a schematic diagram of a fluorescent film used in the image forming apparatus of FIG. Figure 13 is NTS
It is a block diagram showing an example of a drive circuit for displaying according to a C system television signal.

In FIG. 11, 71 is an electron source substrate on which a plurality of electron-emitting devices are arranged, 81 is a rear plate to which the electron source substrate 71 is fixed, and 86 is a fluorescent film 84 on the inner surface of a glass substrate 83.
And a face plate on which a metal back 85 and the like are formed. Reference numeral 82 denotes a support frame. A rear plate 81 and a face plate 86 are connected to the support frame 82 by using frit glass or the like. Reference numeral 88 is an envelope, for example, in the atmosphere or nitrogen in the temperature range of 400 to 500 degrees.
It is baked for 0 minutes or more and sealed.

Reference numeral 74 corresponds to the electron emitting portion in FIG. Reference numerals 72 and 73 are an X-direction wiring and a Y-direction wiring connected to a pair of device electrodes of the surface conduction electron-emitting device.
The envelope 88 includes the face plate 86, the support frame 82, and the rear plate 81 as described above. Since the rear plate 81 is provided mainly for the purpose of reinforcing the strength of the power supply substrate 71, if the electron source substrate 71 itself has sufficient strength, the separate rear plate 81 can be omitted. That is, the support frame 82 is directly sealed to the substrate 71, and the face plate 86, the support frame 82 and the substrate 71 are used to surround the enclosure 88.
May be configured. On the other hand, by installing a support body (not shown) called a spacer (atmospheric pressure resistant support member) between the face plate 86 and the rear plate 81, the envelope 88 having sufficient strength against atmospheric pressure is configured. You can also do it.

FIG. 12 is a schematic diagram showing a fluorescent film. In the case of monochrome, the fluorescent film 84 can be composed of only the fluorescent material. In the case of a color phosphor film, it can be composed of a black member 91 called a black stripe or a black matrix and a phosphor 92 depending on the arrangement of the phosphors. In the case of color display, the purpose of providing the black stripes and the black matrix is to make the color-separated portion between the phosphors 92 of the three primary color phosphors black so as to make the color mixture inconspicuous and to contrast due to external light reflection. It is to suppress the decrease of. As a material for the black stripe, other than a commonly used material containing graphite as a main component, any material that transmits and reflects less light can be used. As a method of applying the phosphor to the glass substrate 93, a precipitation method, a printing method, or the like can be adopted regardless of monochrome or color. Usually, a metal back 85 is provided on the inner surface side of the fluorescent film 84. The purpose of providing the metal back is to improve the brightness by specularly reflecting the light to the inner surface side of the emission of the phosphor to the face plate 86 side, and to act as an electrode for applying an electron beam acceleration voltage, This is to protect the phosphor from damage due to collision of negative ions generated in the envelope. The metal back can be manufactured by performing a smoothing process (usually called “filming”) on the inner surface of the fluorescent film after manufacturing the fluorescent film, and then depositing Al using vacuum evaporation or the like. In order to further increase the conductivity of the fluorescent film 84, the fluorescent film 84
A transparent electrode (not shown) may be provided on the outer surface side (the glass substrate 83 side). When performing the above-described sealing, in the case of color, it is necessary to make each color phosphor correspond to the electron-emitting device, and sufficient alignment is indispensable. The image forming apparatus shown in FIG. 11 is manufactured, for example, as follows.
Envelope 88, similar to the aforementioned stabilization step, while being heated appropriately, ion pump, by an exhaust device not using oil, such as a sorption pump evacuated through an exhaust pipe (not shown), 1 × 10 - ₇ [ [Torr], and the atmosphere is filled with a sufficiently small amount of organic substances, and then sealed. A getter process can be performed to maintain the degree of vacuum after the envelope 88 is sealed. This is because the getter disposed at a predetermined position (not shown) in the envelope 88 is heated by heating using resistance heating, high-frequency heating, or the like immediately before or after the envelope 88 is sealed. This is a process for forming a deposited film. The getter is usually composed mainly of Ba or the like,
By the adsorption effect of the vapor deposition film, for example, 1 × 10 _- 5 or 1 × 10 _- 7 is intended to maintain the degree of vacuum [torr]. Next, a configuration example of a driver circuit for performing television display based on an NTSC television signal on a display panel configured using an electron source having a simple matrix arrangement will be described with reference to FIG. In FIG. 13, 10
Reference numeral 1 is an image display panel, 102 is a scanning circuit, 103 is a control circuit, and 104 is a shift register. 105 is a line memory, 106 is a synchronization signal separation circuit, 107 is a modulation signal generator, and Vx and Va are DC voltage sources.

The display panel 101 includes terminals Doxl to D
oxm, terminals Doyl to Doyn, and high-voltage terminal Hv
Connected to an external electric circuit via Terminal Doxl
Scanning for sequentially driving row-by-row (n elements) electron sources provided in the display panel, that is, surface conduction electron-emitting device groups matrix-wired in a matrix of m rows and n columns. A signal is applied. Terminals Doyl to Do
A modulation signal for controlling the output electron beam of each element of the surface conduction electron-emitting devices of one row selected by the scanning signal is applied to yn. The high voltage terminal Hv is supplied with a DC voltage of, for example, 10 k [V] from the DC voltage source Va, which is sufficient to excite the phosphor into the electron beam emitted from the surface conduction electron-emitting device. It is an accelerating voltage for applying energy. The scanning circuit 102 will be described. This circuit includes m switching elements inside (in the figure, schematically indicated by Sl to Sm). Each switching element selects either the output voltage of the DC voltage source Vx or 0 [V] (ground level), and is electrically connected to the terminals Doxl to Doxm of the display panel 101. Each of the switching elements Sl to Sm operates based on the control signal Tscan output from the control circuit 103, and is, for example, FE.
It can be configured by combining switching elements such as T. In the case of the present example, the DC voltage source Vx determines that the driving voltage applied to the element which is not scanned based on the characteristics (electron emission threshold voltage) of the surface conduction electron-emitting element is equal to or lower than the electron emission threshold voltage. It is set to output a constant voltage such that

The control circuit 103 has a function of matching the operation of each part so that an appropriate display is performed based on an image signal input from the outside. The control circuit 103 generates control signals Tscan, Tsft, and Tmry for each unit based on the synchronization signal Tsync sent from the synchronization signal separation circuit 106. The signal separating circuit 106 for synchronizing signals is a circuit for separating a synchronizing signal component and a luminance signal component from an NTSC system television signal input from the outside, and uses a general frequency separating (filter) circuit or the like. Can be configured. The synchronizing signal separated by the synchronizing signal separating circuit 106 includes a vertical synchronizing signal and a horizontal synchronizing signal, but is shown here as a Tsync signal for convenience of explanation. The luminance signal component of the image separated from the television signal is referred to as a DATA signal for convenience. The DATA signal is input to the shift register 104. Shift register 1
04 is the DATA input serially in time series
The signal is for serial / parallel conversion for each line of the image, and operates based on the control signal Tsft sent from the control circuit 103 (that is, the control signal Ts
It can be said that ft is a shift lock of the shift register 104). The real / parallel converted image data for one line (corresponding to driving data for n electron-emitting devices) is output from the shift register 104 as n parallel signals Idl to Idn. The line memory 105 is a storage device for storing data for one line of an image only for a required time, and the control circuit 103
The contents of Idl to Idn are appropriately stored in accordance with the control signal Tmry sent from the device. The stored content is I'dl
Through I′dn are input to the modulation signal generator 107. The modulation signal generator 107 outputs the image data I ′.
It is a signal source for appropriately driving and modulating each of the surface conduction electron-emitting devices according to each of dl to I'dn, and the output signal is a surface conduction electron emission in the display panel 101 through terminals Doyl to Doyn. Applied to the device.

The electron-emitting device of the present invention has the following basic characteristics with respect to the emission current Ie. That is, there is a clear threshold voltage Vth for electron emission, and electron emission occurs only when a voltage higher than Vth is applied. For a voltage above the electron emission threshold, the emission current also changes according to the change in the voltage applied to the device. From this, when a pulsed voltage is applied to this element, for example, electron emission does not occur even if a voltage below the electron emission threshold is applied, but an electron beam is output when a voltage above the electron emission threshold is applied. To be done. At that time, the intensity of the output electron beam can be controlled by changing the peak value Vm of the pulse. Further, by changing the pulse width Pw, it is possible to control the total amount of charges of the output electron beam.

Therefore, as a method of modulating the electron-emitting device according to the input signal, a voltage modulation method, a pulse width modulation method or the like can be adopted. When implementing the voltage modulation method, a circuit of a voltage modulation method that generates a voltage pulse of a fixed length and modulates the peak value of the pulse appropriately according to input data is used as the modulation signal generator 107. be able to.

In carrying out the pulse width modulation method,
As the modulation signal generator 107, it is possible to use a circuit of a pulse width modulation system that generates a voltage pulse having a constant crest value and appropriately modulates the width of the voltage pulse according to input data. Shift register 104 and line memory 1
For 05, either a digital signal type or an analog signal type can be adopted. This is because the serial / parallel conversion and storage of the image signal may be performed at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the sync signal separation circuit 106 into a digital signal, which may be provided with an A / D converter at the output portion of 106. In connection with this, the line memory 10
Depending on whether the output signal of 5 is a digital signal or an analog signal,
The circuit used for modulation signal generator 107 is slightly different. That is, in the case of the voltage modulation method using a digital signal, for example, a D / A conversion circuit is used as the modulation signal generator 107, and an amplification circuit and the like are added as necessary. In the case of the pulse width modulation method, the modulation signal generator 107 includes, for example, a high-speed oscillator, a counter for counting the number of waves output from the oscillator, and a comparator for comparing the output value of the counter with the output value of the memory. (Comparator) is used. If necessary, an amplifier for amplifying the voltage of the pulse width modulated signal output from the comparator to the drive voltage of the surface conduction electron-emitting device can be added. In the case of voltage modulation method using analog signal,
As the modulation signal generator 107, for example, an amplifier circuit using an operational amplifier or the like can be adopted, and a level shift circuit or the like can be added if necessary. In the case of the pulse width modulation method, for example, a voltage control type oscillation circuit (VCO) can be adopted, and an amplifier for voltage amplification up to the drive voltage of the surface conduction electron-emitting device can be added if necessary.

In the image forming apparatus of the present invention having such a structure, each electron-emitting device has a terminal Do outside the container.
Electrons are emitted by applying a voltage via xl to Doxm and Doyl to Doyn. High voltage terminal H
A high voltage is applied to the metal back 85 or a transparent electrode (not shown) via v to accelerate the electron beam. The accelerated electrons collide with the fluorescent film 84 and are emitted to form an image. The configuration of the image forming apparatus described here is merely an example, and various modifications are possible based on the technical idea of the present invention. As for the input signal, the NTSC system is mentioned, but the input signal is not limited to this, and PAL, SECA
TV signals composed of more scanning lines than M system (for example, high-definition TV including MUSE system)
The method can also be adopted. Next, the ladder-type electron source and the image forming apparatus will be described with reference to FIGS. 14 and 15.

FIG. 14 is a schematic view showing an example of a ladder-type electron source. In FIG. 14, reference numeral 110 denotes an electron source substrate, and 111 denotes an electron-emitting device. 112, Dx1 to D
x10 is a common wiring for connecting the electron-emitting device 111. The electron-emitting device 111 is provided on the substrate 110 with X
A plurality are arranged in parallel in the direction (this is called an element row). A plurality of the element rows are arranged to constitute an electron source. By applying a drive voltage between the common wires of each element row, each element row can be driven independently. That is,
For a device row that wants to emit an electron beam, a voltage equal to or higher than the electron emission threshold value is set.
A voltage below the electron emission threshold is applied. For the common wirings Dx2 to Dx9 between the element rows, for example, Dx2 and Dx3 may be the same wiring.

FIG. 15 is a schematic view showing an example of a panel structure in an image forming apparatus provided with a ladder-type electron source. 120 is a grid electrode, 121 is an opening for passing electrons, and 122 is Doxl, Dox2 ,. . . Dox
m outside the container. 123 are G1, G2 ,. . . A terminal outside the container made of Gn, and 110 is an electron source substrate in which common wiring between each element row is the same wiring. In FIG. 15, FIG. 8 and FIG.
1 are denoted by the same reference numerals as those shown in these drawings. A major difference between the image forming apparatus shown here and the image forming apparatus having the simple matrix arrangement shown in FIG. 11 is whether or not the grid electrode 120 is provided between the electron source substrate 110 and the face plate 86. In FIG. 15, a grid electrode 120 is provided between the face plates 86 of the substrate 110.
The grid electrode 120 is for modulating the electron beam emitted from the surface conduction electron-emitting device, and is for passing the electron beam through the striped electrodes provided orthogonal to the ladder-shaped element rows. A circular opening 121 is provided for each element. The shape and installation position of the grid are not limited to those shown in FIG. For example, a large number of passage openings may be provided in the form of a mesh as openings, and a grid may be provided around or near the surface conduction electron-emitting device. The external terminal 122 and the grid external terminal 123 are electrically connected to a control circuit (not shown). In the image forming apparatus of the present embodiment, a modulation signal for one line of an image is simultaneously applied to the grid electrode columns in synchronization with sequentially driving (scanning) the element rows one by one. Thus, the irradiation of each electron beam to the phosphor can be controlled, and the image can be displayed line by line. The image forming apparatus to which the present invention is applied is used not only as a display device for a television broadcast, a display device such as a video conference system or a computer, but also as an image forming device as an optical printer configured by using a photosensitive drum or the like. be able to.

[0047]

The present invention will be described in detail below with reference to examples, but the present invention is not limited to these examples.

Example 1 A first example will be described with reference to FIGS. 1 and 2A to 2G. FIG. 1 shows a top view of a typical element structure of an image forming apparatus composed of an electron source of the present invention. 1 (a) to 1 (g) are top views showing the manufacturing process of the present invention. 2A to 2G, an example in which 3 × 3 electron-emitting devices, that is, a total of 9 electron-emitting devices are arranged in a matrix on a substrate (not shown), and two X- and Y-direction wirings are formed in two layers respectively. Indicate.

First, a cleaned glass substrate (here,
A pair of element electrodes 1 on a soda lime gas substrate)
1 and 12 are formed. In this example, a thick film printing method was used as a film forming method. The paste material used here is a MOD paste that is an organometallic compound, and the metal component is Pt. The printing method used was a screen printing method.
After printing on a desired pattern, it is dried at 70 ° C. for 10 minutes, and then main firing is performed. The firing temperature is 550 ° C. and the peak holding time is about 8 minutes. After printing and firing, the element electrode 12 on one side was 350.times.200 .mu.m, and the element electrode 11 on one side was 500.times.150 .mu.m. The film thickness was ~ 0.3 micron. (FIG. 2A) Next, the wiring 13 of the first layer of the X-direction wiring is formed. At this time, the wiring 13 in the first layer of the X-direction wiring is the device electrode 12
Is connected at the same time as wiring is formed. In this embodiment, the thick film screen printing method is used as the method for forming the wiring of the first layer of the X-direction wiring. The paste material is generally a mixture of fine powder of conductive material in a glass binder containing lead oxide as a main component. In this embodiment, a paste in which the conductive material is Ag is used. After screen printing with a desired pattern and drying at 110 ° C for 20 minutes, 550 ° C
Wiring for the first layer of X-direction wiring having a width of 100 microns and a thickness of 12 microns was performed by baking for 15 minutes for a peak holding time.
3 was obtained. (FIG. 2B) Subsequently, the wiring 14 of the second layer of the X-direction wiring is formed.
At this time, the wiring 14 of the second layer of the X-direction wiring is the wiring 13 of the first layer of the X-direction wiring formed by the thick film paste.
It is formed so that it overlaps with the same pattern. As a forming method, a thick film screen printing method was used. The paste material here is a MOD paste that is an organometallic compound that is a material for forming the device electrodes 11 and 12, and the metal component is Pt. After printing using the same pattern as the wiring 13 of the first layer of the X-direction wiring, drying is performed at 70 ° C. for 10 minutes, and then main firing is performed. The firing temperature is 550 ° C. and the peak holding time is about 8 minutes. The pattern after printing and firing is the first layer wiring 1 of the X-direction wiring.
As with 3, the width is 100 microns and the thickness is different.
The wiring 14 of the 2nd layer of 0.3 micron X direction wiring was obtained. (FIG. 2 (c)) Regarding the film after firing, the thick film paste used in the wiring 13 of the first layer of the X-direction wiring is generally a glass binder containing lead oxide as a main component and a fine powder of a conductive material. Since it is a mixed product, and the film after printing and firing usually has a porous film quality, the MOD paste is overlaid on the first-layer wiring 13 of the X-direction wiring to print the first wiring of the X-direction wiring. The film is filled with the porous state of the wiring 13 of the layer, and has a two-layer structure with the thick film paste, a mixed state, or an alloyed state.

Next, a strip-shaped interlayer insulating film 15 having a concave opening is formed. The interlayer insulating film 15 has a strip shape, and a recess-shaped opening is provided at the intersection with the device electrode 11, and the device electrode 11 is exposed at that part. In this embodiment, a thick film screen printing method is used as a method of forming the interlayer insulating film 15. The paste material is a thick film paste containing lead oxide as a main component and a glass binder and a resin mixed therein. The film formed by the thick film paste is usually a porous film. Therefore, in order to secure the insulation between the XY bidirectional wiring layers, printing and baking are performed twice.
It is desirable to carry out each time to form two layers. This is because the insulation is secured by printing again after the first printing and baking, and printing and baking the second film so as to fill the porous state of the film formed at the first time. . According to this, printing and firing of the interlayer insulating film 15 were repeated twice in this example. As the forming method, a thick film screen printing method was used. Screen print with the desired pattern,
After drying at 110 ° C. for 20 minutes, calcination at 550 ° C. and peak holding time of 15 minutes is performed to obtain a thickness of 500 μm.
A band-shaped interlayer insulating film 14 having a 30-micron recess-shaped opening was obtained. (FIG. 2D) Subsequently, the wiring 16 of the first layer of the Y-direction wiring is formed.
At this time, the interlayer insulating film 15 is formed on the interlayer insulating film 15.
Form so that it does not protrude beyond the width of the. At the same time, the wiring 16 of the first layer of the Y-direction wiring is connected to the device electrode 11 at the same time as the wiring is formed in the concave opening of the interlayer insulating film 15. As a forming method, a thick film screen printing method similar to the wiring 13 of the first layer of the X-direction wiring was used. The thick-film paste material used is a thick-film paste and the metal component is Ag, like the wiring 13 of the first layer. After screen printing with the desired pattern, drying at 110 ° C for 20 minutes and then 5
Baking is performed at 50 ° C. for a peak holding time of 15 minutes to form a wiring 16 of the first layer of the Y-direction wiring having a width of 300 μm and a thickness of 1 on the strip-shaped interlayer insulating film 15 having a concave opening.
Wiring 16 of the first layer of Y direction wiring of 2 microns was obtained.
(FIG. 2E) Finally, the wiring 17 of the second layer of the Y-direction wiring is formed.
At this time, similarly to the second-layer wiring 14 of the X-direction wiring, it is formed so as to be overlapped with the same pattern as the first-layer wiring 16 of the Y-direction wiring formed by the thick film paste. As the forming method, the thick film screen printing method similar to the wiring of the second layer 14 of the X-direction wiring was used. The paste material here is also the MOD paste which is an organometallic compound and the metal component is Pt, similarly to the wiring 14 of the second layer of the X-direction wiring. After printing using the same pattern as the wiring 16 of the first layer of the Y-direction wiring, drying is performed at 70 ° C. for 10 minutes, and then main firing is performed. The firing temperature is 550 ° C. and the peak holding time is about 8 minutes. The pattern after printing and firing is the first layer wiring 1 in the Y-direction wiring.
As with 6, the width is 300 microns and the thickness is different.
A second-layer wiring 17 of Y-direction wiring of 0.3 μm was obtained. (FIG. 2 (f)) As for the film after firing, the thick film paste used in the wiring 16 of the first layer of the Y-direction wiring is generally conductive to the glass binder whose main component is lead oxide, as in the X-direction wiring. It is a mixture of fine particles of material, printing,
Since the film after firing usually has a porous film quality, the MOD paste is overlaid and printed on the first-layer wiring 16 of the Y-direction wiring to form the film of the first-layer wiring 16 of the Y-direction wiring. The porous state is embedded and has a two-layer structure with a thick film paste, a mixed state, or an alloyed state.

Thus, the matrix wiring portion is completed. Of course, the paste material, printing method, etc. are not limited to those described here.

After the matrix wiring is completed, the electron emitting portion is formed. First, organic palladium (CCP4230, Okuno Chemical Industries Co., Ltd.) was spin-coated on the upper layers of a pair of device electrodes 11 and 12 for energizing the electron-emitting portion formed by the above printing method by a spinner, and then at 10 ° C. The heat treatment is performed for a minute to form the electron emitting portion forming thin film 18 made of Pd. The electron emission portion forming thin film 1 thus formed
8 is composed of fine particles containing Pd as a main element, the film thickness is 10 nanometers, and the sheet resistance is 5 × 10E4Ω /
It was □. Incidentally, the fine particle film described here is a film in which a plurality of fine particles are aggregated, and the fine structure is not only in a state where the fine particles are individually dispersed and arranged, but also the fine particles are adjacent to each other,
Alternatively, the films in an overlapping state (including an island shape) are provided, and the particle size refers to the diameter of fine particles whose particle shape can be recognized in the above state. By patterning this palladium film using photolithography,
The manufacturing process of the electron source substrate before forming is completed. (FIG. 2 (g)) Next, an example in which an image forming apparatus is configured using the electron source substrate having the surface conduction electron-emitting device produced as described above will be described with reference to FIGS. 11 and 12. .

After fixing the electron source substrate 71 on which a large number of surface conduction electron-emitting devices of the matrix wiring of the present invention are formed on the rear plate 81, 5 mm of the electron source substrate 71 is upward, the face plate 86 (glass substrate). The fluorescent film 84 and the metal back 85 are formed on the inner surface of 83)
2, the face plate 86, the support frame 8
2. Frit glass is applied to the joint portion of the rear plate 81, and the temperature is 400 ° C to 50 ° C in the air or nitrogen atmosphere.
It was sealed by baking at 0 ° C. for 10 minutes or more (see FIG. 11). The fixing of the electron source substrate 71 to the rear plate 81 was also performed using frit glass.

In FIG. 11, 74 is a surface conduction electron-emitting device, and 72 and 73 are X-direction wiring and Y-direction wiring, respectively.

In the case of monochrome, the fluorescent film 84 is composed of only the fluorescent material, but in this embodiment, the fluorescent material adopts a stripe shape (see FIG. 12), a black stripe is formed first, and each of the gaps is formed. A phosphor was applied to form a phosphor film 84. As a material for the black stripe, a material mainly containing graphite, which is commonly used, is usually used. A slurry method was used to apply the phosphor onto the glass substrate 83. A metal back 85 is usually provided on the inner surface side of the fluorescent film 84. The metal back was produced by producing the fluorescent film 84, smoothing the inner surface of the fluorescent film 84 (usually called filming), and then vacuum depositing Al.

The face plate 86 further has a fluorescent film 84.
There is a case where a transparent electrode (not shown) is provided on the outer surface side of the fluorescent film 84 in order to enhance the conductivity of the above. However, in the present embodiment, the metal back 85 alone provided sufficient conductivity, so it was omitted. .

At the time of performing the above-mentioned sealing, in the case of a color, each phosphor and the surface conduction electron-emitting device 74 have to correspond to each other, so that sufficient alignment is performed. The atmosphere in the glass container completed as described above is exhausted by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, the surface is exposed through the external terminals Dxl to Dxm and Dyl to Dyn. A voltage was applied between the device electrodes of the conduction electron-emitting device 74, and the electron-emitting region forming thin film 4 was energized (forming process) to form the electron-emitting region 3.

FIG. 9 shows the voltage waveform of the forming process. In FIG. 9, T1 and T2 are the pulse width and pulse interval of the voltage waveform. In this embodiment, T1 is 1 ms and T2 is 1.
The peak value of the triangular wave (peak voltage during forming) was 14 V, and the forming treatment was performed for 60 seconds in a vacuum atmosphere of 1 × 10 −6 [Torr].

In the electron-emitting portion 3 thus formed, fine particles containing palladium as a main component were dispersed and arranged, and the average particle diameter of the fine particles was 30 Å.

Next, the exhaust pipe (not shown) was welded by heating with a gas burner at a vacuum degree of about 10 <-6> [Torr] to seal the envelope.

Finally, in order to maintain the degree of vacuum after sealing,
Getter processing was performed. In this method, a getter disposed at a predetermined position (not shown) in the image forming apparatus is heated by a heating method such as resistance heating or high-frequency heating immediately before or after sealing to form a deposited film. Processing.
The getter is usually composed mainly of Ba or the like, and, for example, 1 × 10 −5 to 1 × 10 5 due to the adsorption action of the deposited film.
The vacuum degree of 10 −7 [Torr] is maintained.

In the image forming apparatus of the present invention completed as described above, each surface conduction electron-emitting device 74 has a scanning signal and a modulation signal (not shown) through the terminals Dxl to Dxm and Dyl to Dyn outside the container. Electrons are emitted by applying each by using the generating means, and the high voltage terminal H
A high voltage of several KV or more is applied to the metal back 85 through v to accelerate the electron beam to collide with the fluorescent film 84,
An image was displayed by exciting and emitting light.

As described above, according to the electron source by the matrix wiring according to the present embodiment, the film quality of the wiring of the matrix wiring is improved by a simple method, and the electron source is formed on the wiring, which is simpler than the conventional method. It can be created with a configuration, and the yield can be improved. In addition, the reliability of the wiring can be increased, the oxidation resistance and the corrosion resistance can be improved, the driving voltage can be reduced, and the life can be improved. Further, since the wiring can be directly formed on the element electrode, the reliability of the connection portion between the element electrode and the wiring can be improved. Further, the wiring resistance can be reduced, and it is possible to prevent the occurrence of image unevenness due to an increase in wiring resistance, which has been a problem when increasing the area.

Further, according to the configuration of this embodiment, a large number of surface conduction electron-emitting devices 7 are easily arranged in the X and Y matrix form.
4 can be arranged, which is suitable for creating a large-screen image forming apparatus.

[Embodiment 2] A second embodiment shown in FIGS.
A description will be given with reference to (a) and (b). FIG. 3 is a top view of a typical element structure of an image forming apparatus composed of the electron source of the present invention. 4A to 4D are top views showing the manufacturing process of the present invention. FIGS. 4A to 4D show an example in which three electron-emitting devices are arranged in a plane with a plurality of strip-shaped wirings on a substrate (not shown).

First, in the same manner as in Example 1, a pair of device electrodes 21 and 22 are formed on a washed glass substrate (here, soda lime glass is used). In this embodiment, a thick film printing method is used as a film forming method. The thick film paste material used here was MOD paste, and Pt was used as the metal component in this example. The printing method is a screen printing method. After printing the desired pattern, 1 at 70 ℃
Dry for 0 minutes, then carry out main calcination. Firing temperature is 5
At 50 ° C, the peak retention time is about 8 minutes. The film thickness after printing and firing was ˜0.3 micron. (FIG. 4A) Next, the wiring 23 of the first layer of the strip-shaped line wiring is formed. At this time, the wiring 23 of the first layer of the strip-shaped line wiring was connected to the device electrodes 21 and 22 at the same time when the wiring was formed. In this embodiment, a thick film screen printing method is used as a method of forming the wiring 23 of the first layer of the strip-shaped line wiring. The paste material is generally a mixture of fine powder of conductive material in a glass binder containing lead oxide as a main component. In this embodiment, a paste in which the conductive material is Ag is used. Perform screen printing with the desired pattern, 1
After drying at 10 ° C. for 20 minutes, baking at 550 ° C. for a peak holding time of 15 minutes is performed to form a strip-shaped line wiring having a width of 300 μm and a thickness of 12 μm.
3 was obtained. (FIG. 4B) Subsequently, the second-layer wiring 24 of the strip-shaped line wiring is formed. At this time, the second-layer wiring 24 of the strip-shaped line wiring is formed so as to be overlapped with the same pattern as the first-layer wiring 23 formed of the thick film paste. As a forming method, a thick film screen printing method was used. The paste material here is a MOD paste that is an organometallic compound that is a material for forming the device electrodes 21 and 22, and the metal component is Pt. After printing using the same pattern as the wiring 23 of the first layer, 70
Main baking is performed by drying at 10 ° C. for 10 minutes. The firing temperature is 550 ° C. and the peak holding time is about 8 minutes. After printing and firing, the wiring 24 of the second layer having a width of 300 μm and a thickness of 0.3 μm is formed similarly to the wiring 23 of the first layer.
I got (FIG. 4 (c)) Regarding the film after firing, the thick film paste used for the wiring 23 of the first layer is generally a mixture of fine powder of conductive material in a glass binder containing lead oxide as a main component. Since the film after printing and firing usually has a porous film quality, the MOD paste is overlaid and printed on the second-layer wiring 24 to print the first-layer wiring 23.
The porous state of the film is embedded and has a two-layer structure with the thick film paste, a mixed state, or an alloyed state.

Thus, the strip-shaped line wiring portion is completed. Of course, the paste material, printing method, etc. are not limited to those described here as in the first embodiment.

Subsequently, the electron emitting portion 25 is formed. (FIG. 4D) The formation method was the same as in Example 1.
Next, the electron source substrate produced as described above was subjected to the forming treatment in the same manner as in Example 1.

In the electron source of this structure, the electron emitting portions are arranged in a plane on a plurality of strip-shaped line wirings, and a plurality of strip-shaped grid electrodes having openings above the electron emitting portions are formed orthogonal to the wirings. Electrons can be emitted from an arbitrary electron-emitting device by arranging them and controlling the drive voltage applied to the electron-emitting device wiring and the grid electrode.

Further, as in the first embodiment, a plurality of electron sources of this embodiment are arranged in a vacuum container, face plates are opposed to each other, and the electron beam emitted from the electron-emitting device is selectively emitted to the phosphor. By making the phosphor emit light by irradiation, an image forming apparatus could be obtained.

Further, a large number of surface conduction electron-emitting devices can be easily arranged in a line, which is suitable for producing a large-screen image forming apparatus.

Further, as an application of the present invention, the above-mentioned first embodiment
By the method of forming the electron source of Example 2 and arrayed light emitting elements were prepared and placed on the photosensitive drum, an electrophotographic recording apparatus could be constructed.

In addition, the same effect can be obtained when an array light emitting element is formed in an electrophotographic recording device.

[0074]

As described above, in the matrix wiring and the electron source of the present invention and the image forming apparatus using the same,
By implementing the configuration and forming method of the present invention, compared to the conventional configuration, 1) matrix wiring can be formed with a simple configuration and process,
The yield is improved.

2) Improving film quality as wiring, oxidation resistance,
Corrosion resistance can be improved and electrical reliability can be improved.

3) A low wiring resistance is realized, and it is possible to prevent the occurrence of pixel unevenness due to an increase in wiring resistance, which is a problem when increasing the area, and to obtain a high-definition image forming apparatus. be able to.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of an electron source substrate formed by XY matrix wiring in a first embodiment of the present invention.

FIG. 2A to FIG. 2G are top views showing the manufacturing process in the first embodiment of the present invention.

FIG. 3 is a schematic configuration diagram of an electron source substrate formed by ladder-shaped line wiring according to a second embodiment of the present invention.

4 (a) to 4 (d) are top views showing manufacturing steps in a second embodiment of the present invention.

FIG. 5 is a schematic view of a conventional surface conduction electron-emitting device.

6 (a) and 6 (b) are a schematic plan view and a cross-sectional view showing the configuration of a flat surface conduction electron-emitting device of the present invention.

FIG. 7 is a schematic view of a vertical surface conduction electron-emitting device of the present invention.

8 (a) to 8 (c) are schematic views showing a manufacturing process of the surface conduction electron-emitting device of the present invention.

9 (a) and 9 (b) are schematic views showing an example of voltage waveforms in an energization forming process which can be adopted in manufacturing the surface conduction electron-emitting device of the present invention.

FIG. 10 is a schematic view showing an example of a matrix arrangement type electron source substrate of the present invention.

FIG. 11 is a schematic view showing an example of a display panel of the image forming apparatus of the present invention.

12A and 12B are a cross-sectional view and a top view showing an example of a fluorescent film.

FIG. 13 is a block diagram showing a drive circuit for displaying on an image forming apparatus in accordance with an NTSC television signal.

FIG. 14 is a schematic view showing an example of a ladder arrangement type electron source substrate of the present invention.

FIG. 15 is a schematic view showing an example of a display panel of the image forming apparatus of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Electron emission part forming thin film 3 Electron emission part 4 Thin film including electron emission part 5, 6, 11, 12, 21, 22 Element electrode 7 Step forming part 13, 16, 23 First layer wiring 15 Interlayer Insulating Films 14, 17, 24 Second Layer Wiring 18, 25 Electron Emission Portion Forming Thin Film 71 Electron Source Substrate 72 X Direction Wiring 73 Y Direction Wiring 74 Surface Conduction Electron Emitting Element 75 Connection 81 Rear Plate 82 Support Frame 83 Glass substrate 84 Fluorescent film 85 Metal back 86 Face plate 88 Envelope 91 Black member 92 Phosphor 101 Display panel 102 Scanning circuit 103 Control circuit 104 Shift register 105 Line memory 106 Synchronous signal separation circuit 107 Modulation signal generator VxVa DC Voltage source 110 Electron source substrate 111 Electron emission element 112 Dx1 to Dx10 are electrons Opening 122 Dox1 to the common wiring 120 grid electrodes 121 electrons for wiring element out passes, Dox2. . . Outer container terminal 123 G1, G2. . . Outer terminal made of Gn

Claims (10)

[Claims] 1. In a method for forming a matrix wiring formed by intersecting a plurality of row-direction wirings and a plurality of column-direction wirings, the row-direction wirings and the column-direction wirings use lead oxide as a wiring material of a first layer. Using a paste in which fine particles of a conductive material are mixed in a glass binder as a main component, and using a paste in which an organic solvent and a resin are mixed with an organometallic compound in a wiring material of a second layer, the first layer is formed. A method for forming a wiring, wherein the second wiring material and the second wiring material have a two-layer structure, an alloy, or a mixed state. 2. The wiring forming method according to claim 1, wherein the wiring material of the first layer or the wiring material of the second layer of the row-direction wiring and the column-direction wiring is separately or simultaneously fired. 3. The wiring material of the first layer and the second layer forming the row-direction wiring and the column-direction wiring is made of a different metal material, or the first layer and the second layer The method for forming a matrix wiring according to claim 1, wherein the wiring materials of the eyes are made of the same metal material. 4. A matrix wiring formed by the method according to any one of claims 1 to 3. 5. An electron source having a surface conduction electron-emitting device including a pair of device electrodes, which is formed by using the method for forming a matrix wiring according to any one of claims 1 to 3, and the row direction wiring and the column. By arranging at a position orthogonal to the direction wiring, and selecting one set or a plurality of sets of the wiring sequentially,
A method of manufacturing an electron source by a simple matrix method, characterized in that a plurality of the electron sources are arranged on a two-dimensional plane so that the electron sources are energized. 6. The connection between the row-direction wiring and the column-direction wiring is performed through the surface conduction electron-emitting device.
The method for manufacturing an electron source according to. 7. The method of manufacturing an electron source according to claim 5, wherein a printing method is used for forming each layer. 8. An electron source manufactured by the method according to any one of claims 5 to 7. 9. An image display device comprising the matrix wiring according to claim 4 and the electron source according to claim 8. 10. The image display device according to claim 9, wherein the electron source is a surface conduction electron-emitting device in which an electron emitting portion is formed by subjecting a thin film for forming an electron emitting portion to an energization process called forming. .