JPH09277586A - Electron source, image forming apparatus and manufacturing method thereof - Google Patents

Abstract

(57) [Abstract] [Problem] Low cost, a small number of steps, and a simplified structure of electrodes and wiring portions improves the reliability of a vacuum sealing portion, and high-quality images can be realized by a high-density pixel array. Of various electron sources, image forming apparatuses, and manufacturing methods thereof. SOLUTION: A substrate having a thick film wiring, on which a large number of elements connected to the wiring are arranged, and a phosphor disposed on a substrate facing the substrate, and a support for separating the substrates. An image forming apparatus having a structure in which the wiring is bent at a lower portion of a support frame of a portion taken out to the outside of an image forming apparatus which is sealed by a frame portion and is held in a reduced pressure atmosphere inside.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron source using thick film wiring, an image forming apparatus using the same, and a manufacturing method thereof.

[0002]

2. Description of the Related Art Conventionally, there are known two types of electron-emitting devices, which are roughly classified into a thermoelectron-emitting device and a cold cathode electron-emitting device. The cold cathode electron emission device includes a field emission type (hereinafter referred to as FE type), a metal / insulating layer / metal type (hereinafter referred to as MIM type), a surface conduction type electron emission device and the like.

As an example of the FE type, W. P. Dyke &
W. W. Doran "Field Emissio"
n ", Advance in Electron Ph
ysics, 8, 89 (1956) or C.I. A. S
pindt, “Physical Properties”
of thin-film field emiss
ion cathodes with mollybde
num cones ", J. Appl. Phys., 4
7, 5248 (1976) and the like are known.

In the MIM type, C.I. A. Mead, "Op
eration of Tunnel-Emisio
n Devices ", J. Appl. Phys., 3
2, 646 (1961) and the like are known.

Examples of the surface conduction electron-emitting device type include:
M. I. Elinson, Radio Eng. Ele
ctron Phys. , 10, 1290 (1965)
Etc. have been disclosed. In the surface conduction electron-emitting device, electrons are emitted by passing a current through a thin film of a small area formed on a substrate in parallel with the film surface. The surface conduction type electron-emitting device may be formed of Sn by Elinson et al.
One using an O2 thin film, one using an Au thin film [G. Di
ttmer: Thin Solid Films, 9,
317 (1972)], by In2 O3 / SnO2 thin film [M. Hartwell and C.I. G. FIG. Fon
stad: IEEE Trans. ED Conf. ,
519 (1975)], by a carbon thin film [Hiraki Araki et al .: Vacuum, Vol. 26, No. 1, p. 22 (198).
3)] etc. have been reported.

As a typical example of these surface conduction electron-emitting devices, the above-mentioned M.S. Figure 15 shows the Hartwell device configuration.
Is schematically shown in. In the figure, 001 is a substrate. 0
Reference numeral 04 denotes a conductive thin film, which is made of a metal oxide thin film or the like formed by sputtering in an H-shaped pattern, and the electron emitting portion 005 is formed by an energization process called energization forming described later. The element electrode spacing L1 in the figure is 0.5 to 1
mm and W'are set to 0.1 mm.

Conventionally, in these surface conduction electron-emitting devices, it is general that the electron-emitting portion 005 is formed in advance by conducting energization forming treatment on the conductive thin film 004 before emitting electrons. That is, the energization forming means that a direct current voltage or a very gentle rising voltage is applied across both ends of the conductive thin film 004 to locally energize the conductive thin film,
This is to form the electron-emitting portion 005 which is deformed or altered to have an electrically high resistance state. In the electron emitting portion 005, a crack is generated in a part of the conductive thin film 004, and electrons are emitted from the vicinity of the crack. The surface conduction electron-emitting device that has been subjected to the energization forming process is one in which electrons are emitted from the electron-emitting portion 005 by applying a voltage to the conductive thin film 004 and passing a current through the device.

[0008]

Since the surface conduction electron-emitting device described above has a simple structure and is easy to manufacture, there is an advantage that a large number of devices can be arrayed and formed over a large area.
Therefore, application studies of charged beam sources, image forming apparatuses, and the like, which make use of this feature, are being conducted. As an example in which a large number of surface conduction electron-emitting devices are formed in an array, as will be described later, surface conduction electron-emission devices are arranged in parallel, which is called a ladder arrangement, and both ends of each device are wired (also called common wiring). An electron source in which a large number of connected lines are arranged (for example, JP-A-64-031332 and JP-A-1-28374).
9, 2-2-257552, etc.).

In particular, in image forming apparatuses such as display devices, in recent years, flat panel display devices using liquid crystal have become popular in place of CRTs, but since they are not self-luminous, they must have a backlight. There are problems, and it has been desired to develop a self-luminous display device. Examples of the self-luminous display device include an image forming device which is a display device in which an electron source in which a large number of surface conduction electron-emitting devices are arranged and a phosphor which emits visible light by electrons emitted from the electron source are combined. (For example, USP 5066883).

However, when the image forming apparatus as described above is manufactured by photolithography and etching techniques, there are the following problems in increasing the area. When processing an electrode or a wiring pattern in the manufacturing process of the image forming apparatus, a metal thin film of an electrode and a wiring material is formed on the substrate in a thickness of 1 to several μm, and the pattern is processed by using ordinary photolithography and etching techniques. However, electrodes and wiring patterns must be formed.

However, for example, in the case of manufacturing on a large-sized substrate of 40 cm square or more by photolithography and etching technology, a large-scale manufacturing facility including a vapor deposition apparatus, an exposure apparatus, an etching apparatus, etc. is required, resulting in enormous cost. However, when the size of the substrate is increased, it is difficult to increase the size of the manufacturing apparatus itself, which causes a serious problem in terms of manufacturing method or cost. Further, there is a problem that the increase in the number of electrodes due to the increase in the area, the increase in the number of steps due to the increase in the number of wirings, and the increase in complexity, the defects such as disconnection and short circuit are likely to occur, and the yield is reduced.

Therefore, according to the present invention, a printing method more suitable for a larger area is used as a means for producing an image forming apparatus instead of the photolithography method for some or all of the steps, and a thick film of several μm to several tens of μm is used. It is an object of the present invention to solve the problems caused by increasing the thickness of the wiring when the wiring is used.

That is, an object of the present invention is to separate a substrate having a step which is increased by thickening the wiring and a substrate facing the substrate and on which phosphors are arranged by a support frame, and to reduce the inside pressure. It is an object of the present invention to provide an image forming apparatus having a structure capable of reducing the occurrence rate of vacuum leak in the stepped portion under the support frame and improving the yield in the image forming apparatus in which the atmosphere is maintained.

[0014]

The above object is achieved by
This is achieved by the present invention described below. That is, the present invention
A substrate having a thick film of wiring, on which a large number of elements connected to the wiring are arranged, and a phosphor placed on a substrate facing the substrate, which is sealed by a support frame portion separating the substrate. Disclosed is an image forming apparatus in which the wiring is attached and the inside is held in a reduced pressure atmosphere, wherein the wiring has a bent structure at a lower portion of a supporting frame of a portion taken out to the outside.

The X-direction wiring and the Y-direction wiring made of the thick film are arranged in a matrix, and an electron source substrate on which an electron-emitting device is arranged at the intersection of the XY wiring, and the electron-emitting device is an active device. The phosphor is disposed as a passive element on the substrate facing the electron source substrate, and is sealed in a supporting frame portion that separates them, and is held in a vacuum, Further, the bent structure is characterized in that two bent portions are provided in a lower portion of the support frame of one side extraction portion of one wiring.

Further, in the bent structure, the bent portion in the lower portion of the support frame of the one-sided lead-out portion of one wiring is 3
In an image forming apparatus having an electron-emitting device, the electron-emitting device is composed of a surface conduction electron-emitting device including a thin film electrode and a fine particle conductive film, and the image forming apparatus is provided. The apparatus is the image forming apparatus described above.

The present invention also has a thick film wiring,
A substrate on which a large number of elements connected to the wiring are arranged;
In a method for manufacturing an image forming apparatus in which a phosphor is disposed on a substrate facing the substrate, the phosphor is sealed by a support frame portion that separates the substrate, and the inside is kept in a reduced pressure atmosphere, the wiring is externally connected. The present invention also discloses a method for manufacturing an image forming apparatus, characterized in that a bent structure is provided at a lower portion of a support frame of a take-out portion.

The X-direction wiring and the Y-direction wiring made of the thick film are arranged in a matrix, and an electron source substrate on which an electron-emitting device is arranged at the intersection of the XY wiring, and the electron-emitting device is an active device. And a phosphor is disposed as a passive element on a substrate facing the electron source substrate, and the phosphor is sealed by a support frame portion separating them and held in a vacuum. The method is characterized in that, in the bent structure, two bent portions are provided in a lower portion of the support frame of one wire extraction portion of one wiring.

Further, in the bent structure, the bent portion in the lower portion of the support frame of the one-sided lead-out portion of one wiring is 3
In the image forming apparatus including an electron-emitting device, the electron-emitting device is constituted by a surface conduction electron-emitting device including a thin film electrode and a fine particle conductive film, and the image is formed. The method is characterized in that the image forming apparatus is the image forming apparatus of the present invention.

The present invention has been made through intensive studies in order to solve the above problems. That is, the electron source and the image forming apparatus of the present invention used the following method to achieve the above object.

(1) A substrate having a thick film wiring, on which a large number of elements connected to the wiring are arranged, and a phosphor on the substrate facing the substrate, which separates the substrates. In an image forming apparatus which is sealed by a supporting frame portion and is kept in a reduced pressure atmosphere inside, an image forming apparatus having a structure in which the wiring is bent at a lower portion of the supporting frame at a portion taken out to the outside is manufactured.

(2) The X-direction wirings and the Y-direction wirings made of thick film are arranged in a matrix, and the electron-emitting substrate and the electron-emitting device on which electron-emitting devices are arranged at the intersections of the XY wirings are used as active devices. The structure in (1) is used in an image forming apparatus in which a phosphor is disposed as a passive element on a substrate facing an electron source substrate, and the phosphor is sealed by a support frame portion separating them and held in a vacuum. .

(3) In the bent structure described in (1) and (2) above, there are two bent portions in the lower portion of the supporting frame of the one-sided lead-out portion of one wiring.

(4) In the bent structure described in the above (1) and (2), the bent portion in the lower portion of the support frame of the one-sided lead-out portion of one wiring is three or more.

(5) The structures described in (1) to (4) above were used in an image forming apparatus using a surface conduction electron-emitting device composed of a thin film electrode and a fine particle conductive film.

That is, when the X-direction wiring and the Y-direction wiring penetrate the portion sealed by glass frit or the like under the supporting frame from the inside including the electron-emitting device and being held in vacuum to the outside, the wiring is By bending, it is possible to eliminate the generation of linear voids that penetrate the inside and outside.

Therefore, by adopting such a structure, a substrate having a step increased by thickening the film,
In an image forming apparatus in which a substrate facing the substrate and a substrate on which phosphors are arranged are separated by a support frame and a reduced pressure atmosphere is held inside, an occurrence rate of a vacuum leak in a wiring step portion under the support frame is reduced, It has become possible to improve the yield.

[0028]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 1 is a schematic view showing an example of an image forming apparatus according to the present invention.

In FIG. 1, 71 is an electron source substrate having a plurality of electron-emitting devices arranged thereon, 81 is a rear plate to which the electron source substrate 71 is fixed, and 86 is a glass substrate 83 on which a fluorescent film 84, a metal back 85 and the like are formed. It is a face plate. Reference numeral 82 denotes a support frame. The rear plate 81 and the face plate 86 are connected to the support frame 82 by using frit glass or the like. Reference numeral 88 is an envelope.

The envelope 88 is composed of the face plate 86, the support frame 82 and the rear plate 81 as described above. Since the rear plate 81 is mainly provided for the purpose of reinforcing the strength of the electron source substrate 71, if the electron source substrate 71 itself has a sufficient strength, the separate rear plate 81 can be unnecessary. That is, the support frame 82 is directly attached to the substrate 71, and the face plate 86, the support frame 82, and the substrate 7 are sealed.
The envelope 88 may be configured with one. On the other hand, by installing a support body (not shown) called a spacer (atmospheric pressure resistant support member) between the face plate 86 and the rear plate 81, the envelope 88 having sufficient strength against atmospheric pressure is configured. You can also do it.

Reference numeral 74 corresponds to the surface conduction electron-emitting portion in FIG. Reference numerals 72 and 73 denote an X-direction wiring and a Y-direction wiring connected to the pair of device electrodes of the surface conduction electron-emitting device. The X-direction wiring 72 and the Y-direction wiring 73 have a structure of penetrating the lower portion of the support frame 82 when taken out of the envelope 88, and in this portion, a bent portion of 77 which is a feature of the present invention. have.

The method of manufacturing the electron-emitting device substrate of this embodiment will be described below with reference to FIGS. A conductive film made of a metal material is printed on a substrate corresponding to the well-washed rear plate 81 to form element electrodes 002 and 003. The pair of device electrodes 002, 003 are formed by a printing method with an electrode interval of several μm to several hundreds μm and a film thickness of several hundreds to several thousand angstroms (a).

Next, a conductive paste is printed to form an X-direction wiring (lower wiring) 72 pattern having a bent portion 77 at a support frame mounting position to be formed later. These X-direction wirings (lower wirings) 72 are arranged so as to contact a part of the device electrodes 002. The film thickness is in the range of several tens μm to several μm (b).

An insulating paste is printed and baked at a position intersecting a Y-direction wiring to be formed later to form an insulator 16. The film thickness is in the range of several tens μm to several μm (c).

Further, a Y-direction wiring (upper wiring) 73 is formed by printing and firing a conductive paste on the insulator 16 in a direction orthogonal to the X-direction wiring (lower wiring). This Y
The directional wiring (upper wiring) 73 is arranged so as to be insulated from the X-direction wiring (lower wiring) 72 by the insulator 16 and to be electrically connected to the element electrode 003. Film thickness is several tens to several μm
(D).

A conductive thin film is formed on the entire surface. Then, patterning is performed by photolithography to form the conductive thin film 004 as shown in FIG. The thickness of the conductive thin film 004 is preferably in the range of several tens of angstroms to several thousand angstroms, and can be appropriately set.
The conductive thin film 004 is patterned by photolithography, a printing method, or the like, and is individually separated (e).

X direction wiring (lower wiring) 72 and Y direction wiring (upper wiring) 7 on the electron source substrate formed as described above.
The support frame 82 is adhered to the No. 3 glass by low melting point glass (frit glass) or the like, and is further heated and sealed together with the face plate 86 described in FIG. 1 to form the envelope 88 (f).

Here, the face plate 86, the rear plate 81, and the supporting frame 82 are made of quartz glass, glass with a reduced content of impurities such as Na, soda-lime glass, or soda-lime glass substrate on which SiO2 is laminated by a sputtering method or the like. Etc., and ceramics such as alumina can be used.

The facing element electrodes 002, 003, the X-direction wiring (lower wiring) 72, and the Y-direction wiring (upper wiring) 73 may be made of any material as long as they have conductivity. However, for example, Ni, Cr, Au, Mo,
Metals or alloys such as W, Pt, Ti, Al, Cu and Pd, and metals such as Pd, Ag, Au, RuO2 and Pd-Ag, or printed conductors composed of metal oxides and glass, and polysilicon. Semiconductor conductor materials such as
Examples thereof include transparent conductors such as n2 O3 --SnO2.

As the material of the insulator 16, a glass paste which is generally commercially available can be used.

Specific examples of the material forming the conductive thin film 004 include Pt, Ru, Ag, Au, Ti and I.
n, Cu, Cr, Fe, Zn, Sn, Ta, W, Pd, and other metals, PdO, SnO2, In2 O3, PbO, Sb
Oxides such as 2 O3, HfB2, ZrB2, LaB6, C
Borides such as eB6, YB4, GdB4, TiC, Zr
Carbides such as C, HfC, TaC, SiC, WC, Ti
Nitride such as N, ZrN, HfN, etc., semiconductor such as Si, Ge, etc., carbon, etc., and is composed of a fine particle film. Incidentally, the fine particle film described here is a film in which a plurality of fine particles are aggregated, and as a fine structure thereof, not only a state in which the fine particles are dispersed and arranged but also a state in which the fine particles are adjacent to each other or overlap each other (islets are also included) Including). As the low melting point glass (frit glass), a commercially available glass having a melting point of 400 to 550 ° C. can be used.

A basic description of the surface conduction electron-emitting device embodying the present invention will be given below. The basic structure of the surface conduction electron-emitting device of the present invention is roughly classified into two types: a plane type and a vertical type. First, the planar surface conduction electron-emitting device will be described. 5A and 5B are schematic views showing the structure of the flat surface conduction electron-emitting device of the present invention, FIG. 5A being a plan view and FIG. 5B being a sectional view.

In FIG. 5, 001 is a substrate, and 002 and 00.
Reference numeral 3 is a device electrode, 004 is a conductive thin film, and 005 is an electron emitting portion. As the substrate 001, quartz glass, glass having a reduced content of impurities such as Na, soda lime glass, a glass substrate on which SiO2 is deposited by a sputtering method, a ceramic substrate such as alumina, or the like can be used.

As the material of the device electrodes 002 and 003 facing each other, general conductivity can be used.
Metals or alloys such as r, Au, Mo, W, Pt, Ti, Al, Cu, Pd, and Pd, As, Ag, Au, Ru
It can be selected from a printed conductor composed of a metal or metal oxide such as O2 and Pd-Ag and glass, a transparent conductor such as In2 O3 -SnO2 and a semiconductor conductor material such as polysilicon. The element electrode interval L, the element electrode length W, the shape of the conductive thin film 004, and the like are designed in consideration of the applied form and the like. It is preferably in the range of several thousand angstroms to several hundreds of μm, and more preferably in the range of 1 to 100 μm in consideration of the voltage applied between the device electrodes.

The device electrode length W is in the range of several μm to several hundreds μm in consideration of the resistance value of the electrode and the electron emission characteristics. The film thickness d of the device electrodes 002 and 003 is in the range of 100 Å to 1 μm. In addition to the structure shown in FIG. 5, a conductive thin film 004 and opposing device electrodes 002 and 003 may be stacked in this order on the substrate 001.

For the conductive thin film 004, it is preferable to use a fine particle film composed of fine particles in order to obtain good electron emission characteristics. The film thickness is appropriately set in consideration of the step coverage to the device electrodes 002 and 003, the resistance value between the device electrodes 002 and 003, and the forming conditions described later, etc., but is usually in the range of several to several thousand angstroms. Is preferable, and more preferably in the range of 10 to 500 angstroms. The resistance value is such that Rs is 1
It is a value of × 10 ² to 1 × 10 ⁷ Ω. Note that Rs is the resistance R of a thin film having a thickness of t, a width of w, and a length of l, R = Rs (l
/ W), which is expressed by Rs = ρ / t, where ρ is the resistivity of the thin film material. In the specification of the present application, the forming process will be described by taking an energization process as an example, but the forming process is not limited to this, and any method can be used as long as it is a method of forming a crack in a film to form a high resistance state. Good.

The material forming the conductive thin film 004 is P
d, Pt, Ru, Ag, Au, Ti, In, Cu, C
metals such as r, Fe, Zn, Sn, Ta, W, Pb, Pd
O, SnO2, In2 O3, PbO, Sb2 O3 and other oxides, HfB2, ZrB2, LaB6, YB4, GdB
Borides such as 4, TiC, ZrC, HfC, TaC, Si
It is appropriately selected from carbides such as C and WC, nitrides such as TiN, ZrN, and HfN, semiconductors such as Si and Ge, and carbon.

The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure has a state in which the fine particles are individually dispersed and arranged, or a state in which the fine particles are adjacent to each other or overlap each other (some fine particles are aggregated). However, it also includes the case where an island-shaped structure is formed as a whole). The particle size of the fine particles is in the range of several angstroms to 1 μm, preferably in the range of 10 to 200 angstroms.

The electron emitting portion 005 is composed of a crack having a high resistance formed in a part of the conductive thin film 004, and depends on the film thickness, film quality, material of the conductive thin film 004, a method such as energization forming described later, and the like. It will be what you did. Electron emission part 0
The inside of 05 may contain conductive fine particles having a particle diameter of 1000 angstroms or less. The conductive fine particles contain some or all of the elements of the material forming the conductive thin film 004. Electron emitting part 00
5 and the conductive thin film 004 in the vicinity thereof may contain carbon or a carbon compound.

Next, the vertical surface conduction electron-emitting device will be described. FIG. 6 is a schematic view showing an example of the vertical surface conduction electron-emitting device of the present invention. In FIG.
The same parts as those shown in FIG. 5 are designated by the same reference numerals as those shown in FIG. 21 is a step forming part. Substrate 001, device electrodes 002 and 003, conductive thin film 00
4. The electron emitting portion 005 can be made of the same material as in the case of the flat surface conduction electron emitting device described above. The step forming portion 21 can be made of an insulating material such as SiO2 formed by a vacuum deposition method, a printing method, a sputtering method or the like. The film thickness of the step forming portion 21 corresponds to the device electrode distance L of the flat surface conduction electron-emitting device described above,
It can be in the range of several thousand angstroms to several tens of μm. This film thickness is set in consideration of the manufacturing method of the step forming portion and the voltage applied between the element electrodes, but is preferably in the range of several hundred angstroms to several μm.

The conductive thin film 004 is formed on the device electrodes 002 and 003 after forming the step forming portion 21.
Laminated on top of 003. Although the electron emitting portion 005 is formed in the step forming portion 21 in FIG. 6, the shape and position are not limited to this, depending on the forming conditions, forming conditions, and the like.

There are various methods for manufacturing the above-mentioned surface conduction electron-emitting device, and one example thereof is schematically shown in FIG. Hereinafter, an example of the manufacturing method will be described with reference to FIGS. Also in FIG. 7, the same parts as those shown in FIG. 5 are designated by the same reference numerals as those shown in FIG.

1) The substrate 001 is thoroughly washed with a detergent, pure water, an organic solvent, etc., and a device electrode material is deposited by a vacuum deposition method, a sputtering method or the like, and then, on the substrate 001 by, for example, a photolithography technique. Element electrode 002,0
03 is formed (see FIG. 7A).

2) An organic metal solution is applied to the substrate 001 provided with the device electrodes 002 and 003 to form an organic metal thin film. The organic metal solution contains the above-mentioned conductive thin film 004.
It is possible to use a solution of an organometallic compound containing a metal of the above material as a main element. The organometallic thin film is heat-fired and patterned by lift-off, etching or the like to form a conductive thin film 004 (see FIG. 7B). here,
Although the coating method of the organic metal solution has been described, the method of forming the conductive thin film 004 is not limited to this, and a vacuum deposition method, a sputtering method, a chemical vapor deposition method, a dispersion coating method, a dipping method, A spinner method or the like can also be used.

3) Subsequently, a forming process is performed.
As an example of the forming processing method, a method by an energization processing will be described. When electricity is applied between the device electrodes 002 and 003 by using a power source (not shown), an electron emitting portion 005 having a changed structure is formed at the site of the conductive thin film 004 (see FIG. 7C).

According to the energization forming, the conductive thin film 00
A site where the structure is locally changed such as destruction, deformation, or alteration is formed at 4. This portion becomes the electron emitting portion 005.
FIG. 8 shows an example of the voltage waveform of energization forming. The voltage waveform is preferably a pulse waveform. For this, the method shown in FIG. 8 (a) in which a pulse having a pulse peak value of a constant voltage is continuously applied, and the method shown in FIG. 8 (b) in which a voltage pulse is applied while increasing the pulse peak value. There is.

In FIG. 8A, T1 and T2 are the pulse width and pulse interval of the voltage waveform. Usually T1 is 1μs
10 ms and T2 are set in the range of 10 μs to 100 ms. The peak value of the triangular wave (peak voltage during energization forming) is appropriately selected according to the form of the surface conduction electron-emitting device. Under such conditions, for example, a voltage is applied for several seconds to several tens minutes. The pulse waveform is not limited to the triangular wave, and a desired waveform such as a rectangular wave can be adopted.

T1 and T2 in FIG.
It can be similar to that shown in FIG. The peak value of the triangular wave (peak voltage during energization forming) can be increased by, for example, about 0.1 V steps. The end of the energization forming process can be detected by applying a voltage that does not locally break or deform the conductive thin film 004 during the pulse interval T2 and measure the current. For example, the device current flowing by applying a voltage of about 0.1 V is measured, the resistance value is obtained, and when the resistance is 1 MΩ or more, the energization forming is terminated.

4) It is preferable that an activation treatment is applied to the element which has finished forming. By performing the activation process, the device current If and the emission current Ie are significantly changed. The activation treatment can be performed, for example, in an atmosphere containing a gas of an organic substance, by repeating the application of pulses in the same manner as the energization forming. This atmosphere can be formed by using the organic gas remaining in the atmosphere when the inside of the vacuum container is evacuated by using, for example, an oil diffusion pump or a rotary pump, and is sufficiently evacuated once by an ion pump or the like. It can also be obtained by introducing a gas of a suitable organic substance into a vacuum. At this time, the preferable gas pressure of the organic substance is the above-mentioned application form, the shape of the vacuum container,
Since it varies depending on the type of organic substance, etc., it is appropriately set depending on the case.

Suitable organic substances include organic hydrocarbons such as alkanes, alkenes, alkynes, aliphatic hydrocarbons, aromatic hydrocarbons, alcohols, aldehydes, ketones, aminos, phenols, carboxylic acids and sulfonic acids. Acids and the like can be mentioned, and specifically, methane, ethane,
Saturated hydrocarbon represented by CnH2n + 2 such as propane, unsaturated hydrocarbon represented by composition formula such as ethylene, propylene and CnH2n, benzene, toluene, methanol, ethanol, formaldehyde, acetaldehyde, acetone,
Methyl ethyl ketone, methyl amine, ethyl amine, phenol, formic acid, acetic acid, propionic acid, etc. can be used.

By this treatment, carbon or a carbon compound is deposited on the device from the organic substance existing in the atmosphere, and the device current If and the emission current Ie change remarkably. The termination of the activation process is determined while measuring the device current If and the emission current Ie. The pulse width, pulse interval, pulse crest value, etc. are set as appropriate.

Carbon or carbon compound means HOPG (H
strongly Oriented Pyrolytic
Graphite), PG (Pyrolytic Gr)
aphite), GC (Glassy Carbon)
Such as graphite (HOPG is a graphite having an almost perfect crystal structure, PG is a graphite having a crystal grain of about 200 angstroms and the crystal structure is somewhat disordered, and GC is a crystal grain of about 20 angstrom and the crystal structure is further disturbed. And amorphous carbon (amorphous carbon and carbon containing a mixture of amorphous carbon and fine crystals of the graphite), and its film thickness is preferably 500 angstroms or less, and 300 angstroms. The following is more preferable.

5) It is preferable that the electron-emitting device obtained through the activation step is subjected to a stabilization treatment. In this process, the partial pressure of the organic substance in the vacuum container is 10 ^-8 torr or less,
Desirably, it is performed at 10 ^-10 torr or less. The pressure in the vacuum container is preferably 10 ^−6.5 to 10 ⁻⁷ torr, and particularly preferably 10 ⁻⁸ torr or less. It is preferable to use a vacuum exhaust device that does not use oil so that the oil generated from the device does not affect the characteristics of the element.

Specifically, a vacuum evacuation device such as a sorption pump or an ion pump can be used. Further, when evacuating the inside of the vacuum vessel, it is preferable to heat the entire vacuum vessel to facilitate evacuating the organic substance molecules adsorbed on the inner wall of the vacuum vessel and the electron-emitting device. At this time, the vacuum evacuation condition in the heated state is preferably 80 to 200 ° C. for 5 hours or more, but is not particularly limited to this condition, and various conditions such as the size and shape of the vacuum container, the configuration of the electron-emitting device, etc. It changes with. The partial pressure of the organic substance is determined by measuring the partial pressure of organic molecules having a mass number of 10 to 200 and mainly composed of carbon and hydrogen using a mass spectrometer, and integrating the partial pressures.

The atmosphere at the time of driving after the stabilization step is preferably the same as the atmosphere at the end of the stabilization treatment, but is not limited to this. If the organic substance is sufficiently removed, Even if the degree of vacuum itself is slightly reduced, sufficiently stable characteristics can be maintained. By adopting such a vacuum atmosphere, the deposition of new carbon or carbon compound can be suppressed, and as a result, the device current If and the emission current Ie can be suppressed.
Becomes stable.

Various arrangements of electron-emitting devices can be adopted. As an example, a large number of electron-emitting devices arranged in parallel are connected at both ends, and a large number of rows of electron-emitting devices are arranged (referred to as a row direction), and in a direction orthogonal to this wiring (referred to as a column direction). There is a ladder-like arrangement in which electrons from the electron-emitting device are controlled and driven by a control electrode (also called a grid) arranged above the electron-emitting device. Separately, a plurality of electron-emitting devices are arranged in a matrix in the X and Y directions, and one of the electrodes of the plurality of electron-emitting devices arranged in the same row is commonly connected to a wiring in the X direction. One example is one in which the other of the electrodes of a plurality of electron-emitting devices arranged in the same column is commonly connected to a wiring in the Y direction. Such a thing is what is called a simple matrix wiring. First, the simple matrix wiring will be described in detail below.

An electron source substrate obtained by arranging a plurality of electron-emitting devices of the present invention in a matrix will be described with reference to FIG. In FIG. 9, reference numeral 71 denotes an electron source substrate, 72 denotes an X-direction wiring, and 73 denotes a Y-direction wiring. 74 is a surface conduction electron-emitting device, and 75 is a connection. The surface conduction electron-emitting device 74 may be either the flat type or the vertical type described above.

The m X-direction wirings 72 are Dx1 and Dx.
2 to Dxm, and can be made of a conductive metal or the like formed by a vacuum deposition method, a printing method, a sputtering method, or the like. The material, thickness, and width of the wiring are appropriately designed. Y
The directional wiring 73 is composed of n wirings Dyl, Dy2, to Dyn, and is formed similarly to the X-directional wiring 72. An interlayer insulating layer (not shown) is provided between the m X-direction wirings 72 and the n Y-directions 73 to electrically isolate the two (m and n are both positive). integer). The interlayer insulating layer (not shown) is made of SiO2 or the like formed by a vacuum vapor deposition method, a printing method, a sputtering method or the like. For example, the X-direction wiring 72 and the Y-direction wiring 7 are formed in a desired shape on the entire surface or a part of the substrate 71 on which the X-direction wiring 72 is formed.
The film thickness, the material, and the manufacturing method are set so as to withstand the potential difference at the intersection of No. 3 and No. 3. The X-direction wiring 72 and the Y-direction wiring 73 are respectively drawn out as external terminals. The pair of electrodes (not shown) forming the surface conduction electron-emitting device 74 is m
The X-direction wirings 72, the Y-direction wirings 73, and the n-direction wirings 73 are electrically connected to each other by a connecting wire 75 made of a conductive metal or the like.

The material forming the wiring 72 and the wiring 73, the material forming the wire connection 75, and the material forming the pair of element electrodes may have the same or partial constituent elements,
Moreover, each may be different. These materials are appropriately selected, for example, from the above-described materials for the device electrodes. When the material forming the element electrode and the wiring material are the same, the wiring connected to the element electrode can also be referred to as an element electrode.

A scanning signal applying means (not shown) for applying a scanning signal for selecting a row of the surface conduction electron-emitting devices 74 arranged in the X direction is connected to the X-direction wiring 72.
On the other hand, the Y-direction wiring 73 is connected with a modulation signal generating means (not shown) for modulating each column of the surface conduction electron-emitting devices 74 arranged in the Y direction according to an input signal. The driving voltage applied to each electron-emitting device is supplied as a difference voltage between the scanning signal and the modulation signal applied to the device. In the above configuration, individual elements can be selected and driven independently using a simple matrix wiring.

FIG. 10 and FIG. 1 show an image forming apparatus constructed by using an electron source having such a simple matrix arrangement.
1 and FIG. 12 is a schematic diagram showing an example of a display panel of the image forming apparatus, and FIG.
It is a schematic diagram of the fluorescent film used for the image forming apparatus of No. 2.
FIG. 10 is a block diagram showing an example of a driving circuit for performing display according to an NTSC television signal. Note that, in FIG. 12, the bent lead-out wiring portion of the present invention is omitted for convenience of description. In FIG. 12, 71 is an electron source substrate on which a plurality of electron-emitting devices are arranged, 81 is a rear plate 86 to which the electron source substrate 71 is fixed, and a fluorescent film 8 is provided on the inner surface of a glass substrate 83.
4 and a metal back 85 are formed on the face plate. Reference numeral 82 denotes a support frame. The rear plate 81 and the face plate 86 are connected to the support frame 82 by using frit glass or the like. Reference numeral 88 denotes an envelope, which is baked and sealed in the temperature range of 400 to 500 ° C. for 10 minutes or more in the atmosphere or nitrogen, for example. 74 corresponds to the electron emitting portion in FIG. 72 and 73 are the X-direction wiring and the Y-direction connected to the pair of device electrodes of the surface conduction electron-emitting device.

The envelope 88 is composed of the face plate 86, the support frame 82 and the rear plate 81 as described above. Since the rear plate 81 is mainly provided for the purpose of reinforcing the strength of the electron source substrate 71, if the electron source substrate 71 itself has a sufficient strength, the separate rear plate 81 can be unnecessary. That is, the support frame 82 is directly attached to the substrate 71, and the face plate 86, the support frame 82, and the substrate 7 are sealed.
The envelope 88 may be composed of one. On the other hand, by installing a support body (not shown) called a spacer (atmospheric pressure resistant support member) between the face plate 86 and the rear plate 81, the envelope 88 having sufficient strength against atmospheric pressure is configured. You can also do it.

FIG. 11 is a schematic diagram showing a fluorescent film. In the case of monochrome, the fluorescent film 84 can be composed of only the fluorescent material. In the case of a color phosphor film, it can be composed of a black member 91 called a black stripe or a black matrix and a phosphor 92 depending on the arrangement of the phosphors. In the case of color display, the purpose of providing the black stripes and the black matrix is to make the color-separated portion between the phosphors 92 of the three primary color phosphors black so as to make the color mixture inconspicuous and to contrast due to external light reflection. It is to suppress the decrease of. As a material for the black stripe, other than a commonly used material containing graphite as a main component, any material that transmits and reflects less light can be used.

As a method for applying the phosphor to the glass substrate 93, a precipitation method, a printing method or the like can be adopted regardless of monochrome or color. Usually, a metal back 85 is provided on the inner surface side of the fluorescent film 84. The purpose of providing a metal back is
The light emitted from the phosphor toward the inner surface is converted into a face plate 8.
Improve brightness by specular reflection to the 6 side, act as an electrode for applying electron beam acceleration voltage, protect phosphor from damage due to collision of negative ions generated in the envelope, etc. It is. The metal back can be manufactured by performing a smoothing treatment (usually called filming) on the inner surface of the fluorescent film after manufacturing the fluorescent film, and then depositing Al using vacuum deposition or the like.

The face plate 86 further includes a fluorescent film 8
In order to improve the conductivity of No. 4, a transparent electrode (not shown) may be provided on the outer surface side (the glass substrate 83 side) of the fluorescent film 84. When performing the above-described sealing, in the case of color, it is necessary to make each color phosphor correspond to the electron-emitting device, and sufficient alignment is indispensable. The image forming apparatus shown in FIG. 12 is manufactured, for example, as follows.

The envelope 88 is similar to the above-mentioned stabilization process.
In addition, while heating appropriately,
The exhaust device that does not use oil such as a pump
Exhaust through the trachea, 1 x 10^-7Vacuum degree of about torr
After the atmosphere of the organic substance is sufficiently small, it is sealed.
In order to maintain the vacuum degree after the envelope 88 is sealed, a getter is used.
-Can also be processed. This is the sealing of the envelope 88.
Immediately before or after sealing, resistance heating or high frequency heating, etc.
By heating with a predetermined position inside the envelope 88 (not shown)
The getter placed in (shown) is heated to form a vapor deposition film.
Processing. The getter usually has Ba as a main component.
Due to the adsorption action of the deposited film, for example, 1 × 10 ^-Five~ 1 × 10
^-7The degree of vacuum of torr is maintained.

Next, a configuration example of a drive circuit for performing television display based on an NTSC television signal on a display panel configured by using an electron source having a simple matrix arrangement will be described with reference to FIG. In FIG. 10, 101 is a display panel, 102 is a scanning circuit, 103 is a control circuit, and 104 is a shift register. Reference numeral 105 is a line memory, 106 is a synchronizing signal separation circuit, 107 is a modulation signal generator, and Vx and Va are DC voltage sources.

The display panel 101 has terminals Doxl to Do.
xm, terminals Doyl to Doyn, and a high voltage terminal Hv are connected to an external electric circuit. Terminals Doxl to D
The oxm is provided with a scanning signal for sequentially driving an electron source provided in the display panel, that is, a group of surface conduction electron-emitting devices which are matrix-wired in a matrix of m rows and n columns row by row (n elements). Is applied.

A modulation signal for controlling the output electron beam of each element of the surface conduction electron-emitting devices of one row selected by the scanning signal is applied to the terminals Doyl to Doyn. The high-voltage terminal Hv is supplied with a direct-current voltage of, for example, 10 kV from the direct-current voltage source Va, which imparts sufficient energy to excite the phosphor to the electron beam emitted from the surface conduction electron-emitting device. This is the acceleration voltage for

The scanning circuit 102 will be described. The circuit is provided with m switching elements inside (indicated by S1 to Sm in the figure). Each switching element is the output voltage of the DC voltage source Vx or 0V
One of (ground level) is selected and electrically connected to the terminals Doxl to Doxm of the display panel 101. Each of the switching elements Sl to Sm has a control circuit 10
3 operates based on the control signal Tscan output from the device 3, and can be configured by combining switching elements such as FETs.

In the case of the present example, the DC voltage source Vx is an electron emission threshold value which is a drive voltage applied to an element which is not scanned based on the characteristics (electron emission threshold voltage) of the surface conduction electron-emitting element. It is set to output a constant voltage that is less than or equal to the voltage. The control circuit 103 has a function of matching the operation of each unit so that appropriate display is performed based on an image signal input from the outside. Control circuit 103
Is the synchronization signal Ts sent from the synchronization signal separation circuit 106.
Tscan and Tsf for each part based on ync
The control signals t and Tmry are generated.

The sync signal separation circuit 106 is a circuit for separating a sync signal component and a luminance signal component from an NTSC television signal input from the outside, and uses a general frequency separation (filter) circuit or the like. Can be configured. The sync signal separated by the sync signal separation circuit 106 is composed of a vertical sync signal and a horizontal sync signal, but is shown here as a Tsync signal for convenience of explanation. The luminance signal component of the image separated from the television signal is referred to as a DATA signal for convenience. The DATA signal is input to the shift register 104.

The shift register 104 is for serial / parallel conversion of the DATA signal serially input in time series for each line of the image, and is based on the control signal Tsft sent from the control circuit 103. (I.e., the control signal Tsft can be said to be a shift lock of the shift register 104). The data for one line of the serial / parallel converted image (corresponding to the driving data for n electron-emitting devices) is Idl.
To Idn as the n parallel signals, the shift register 1
04. The line memory 105 is a storage device for storing data for one line of an image for a required time, and a control signal Tm sent from the control circuit 103.
The contents of Idl to Idn are stored according to ry. The stored contents are output as I'dl to I'dn,
The signal is input to modulation signal generator 107.

The modulation signal generator 107 outputs the image data I ′.
It is a signal source for appropriately driving and modulating each of the surface conduction electron-emitting devices according to each of dl to I'dn, and the output signal is a surface conduction electron in the display panel 101 through terminals Doyl to Doyn. Applied to the emitting element.

The electron-emitting device of the present invention has the basic characteristic of being lower than the emission current Ie. That is, the electron emission has a clear threshold voltage Vth, and the electron emission occurs only when a voltage higher than Vth is applied. For a voltage equal to or higher than the electron emission threshold value, the emission current also changes according to the change in the voltage applied to the device. From this, when a pulse-like voltage is applied to the element, for example, when a voltage lower than the electron emission threshold is applied, electron emission does not occur, but when a voltage higher than the electron emission threshold is applied. Outputs an electron beam. At this time, the intensity of the output electron beam can be controlled by changing the pulse peak value Vm. In addition, it is possible to control the total amount of charges of the output electron beam by changing the pulse width Pw.

Therefore, as a method of modulating the electron-emitting device according to the input signal, a voltage modulation method, a pulse width modulation method, or the like can be employed. In carrying out the voltage modulation method, as the modulation signal generator 107, a circuit of a voltage modulation method that generates a voltage pulse of a constant length and appropriately modulates the peak value of the pulse according to the input data is used. Can be used.

When implementing the pulse width modulation method,
As the modulation signal generator 107, it is possible to use a circuit of a pulse width modulation system that generates a voltage pulse having a constant crest value and appropriately modulates the width of the voltage pulse according to input data. Shift register 104 and line memory 1
For 05, either a digital signal type or an analog signal type can be adopted. This is because the serial / parallel conversion and storage of the image signal may be performed at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the sync signal separation circuit 106 into a digital signal, which may be provided with an A / D converter at the output portion of 106. In connection with this, the line memory 10
Depending on whether the output signal of 5 is a digital signal or an analog signal,
The circuit used for modulation signal generator 107 is slightly different. That is, in the case of the voltage modulation method using a digital signal, for example, a D / A conversion circuit is used as the modulation signal generator 107, and an amplification circuit and the like are added as necessary. In the case of the pulse width modulation method, the modulation signal generator 107 includes, for example, a high-speed oscillator, a counter for counting the number of waves output from the oscillator, and a comparator for comparing the output value of the counter with the output value of the memory. (Comparator) is used. If necessary, an amplifier for amplifying the voltage of the pulse width modulated signal output from the comparator to the drive voltage of the surface conduction electron-emitting device can be added.

In the case of the voltage modulation method using an analog signal, the modulation signal generator 107 may be an amplifier circuit using, for example, an operational amplifier, and a level shift circuit or the like may be added if necessary. In the case of the pulse width modulation method, for example, a voltage controlled oscillation circuit (VCO) can be adopted, and an amplifier for voltage amplification up to the drive voltage of the surface conduction electron-emitting device can be added if necessary. In the image forming apparatus of the present invention which can have such a configuration, each of the electron-emitting devices has a terminal outside the container Doxl to D.
Electron emission occurs by applying a voltage via oxm, Doyl to Doyn. A high voltage is applied to the metal back 85 or a transparent electrode (not shown) via the high voltage terminal Hv to accelerate the electron beam. The accelerated electrons collide with the fluorescent film 84 and emit light to form an image.

The configuration of the image forming apparatus described here is an example, and various modifications can be made based on the technical idea of the present invention. For the input signal, the NTSC system has been described, but the input signal is not limited to this, and PAL, SEC
In addition to AM system, TVs with more scanning lines than this
Signal (for example, high-quality T including MUSE method)
V) system can also be adopted. Next, a ladder type electron source and an image forming apparatus will be described with reference to FIGS. 13 and 14.

FIG. 13 is a schematic diagram showing an example of a ladder-type arrangement of electron sources. In FIG. 13, reference numeral 110 denotes an electron source substrate, and 111 denotes an electron-emitting device. 112 (ie Dx
1 to Dx10) are common wirings for connecting the electron-emitting devices 111. The electron-emitting device 111 is the substrate 110.
Above, a plurality are arranged in parallel in the X direction (this is called an element row). A plurality of the element rows are arranged to constitute an electron source. By applying a drive voltage between the common lines of each element row, each element row can be driven independently. That is, a voltage equal to or higher than the electron emission threshold is applied to an element row that wants to emit an electron beam, and a voltage equal to or lower than the electron emission threshold is applied to an element row that does not emit an electron beam. The common wirings Dx2 to Dx9 between the element rows are, for example, Dx2,
It is also possible to use the same wiring for Dx3.

FIG. 14 is a schematic diagram showing an example of a panel structure in an image forming apparatus provided with a ladder-type electron source. Reference numeral 120 is a grid electrode, 121 is an opening for passing electrons, and 122 is an external terminal of Dox1, Dox2, to Doxm. 123 is the grid electrode 120
An outer terminal of the container composed of G1, G2, ..., Gn connected to
Reference numeral 110 denotes an electron source substrate in which the common wiring between the element rows is the same wiring. In this figure, for convenience of explanation, the bent lead-out wiring portion of the present invention is omitted. In FIG. 14, the same parts as those shown in FIGS. 12 and 13 are designated by the same reference numerals as those shown in these figures. The major difference between the image forming apparatus shown here and the image forming apparatus having the simple matrix arrangement shown in FIG.
It is whether or not the grid electrode 120 is provided between 0 and the face plate 86.

In FIG. 14, a grid electrode 120 is provided between the substrate 110 and the face plate 86. The grid electrode 120 is for modulating the electron beam emitted from the surface conduction electron-emitting device, and is for passing the electron beam through the stripe-shaped electrodes provided orthogonal to the ladder-shaped arrangement of the device rows. A circular opening 121 is provided for each element. The shape and installation position of the grid are not limited to those shown in FIG. For example, a large number of passage openings may be provided in the form of a mesh as openings, and a grid may be provided around or near the surface conduction electron-emitting device. The outer terminal 122 and the outer grid terminal 123 are electrically connected to a control circuit (not shown). In the image forming apparatus of the present embodiment, a modulation signal for one line of an image is simultaneously applied to the grid electrode columns in synchronization with sequentially driving (scanning) the element rows one by one. This makes it possible to control the irradiation of each electron beam to the phosphor and display the image while shifting one line. The image forming apparatus of the present invention can be used not only as a display apparatus for television broadcasting, a display apparatus such as a video conference system or a computer, but also as an image forming apparatus as an optical printer configured by using a photosensitive drum or the like. . The image forming apparatus of the present invention can be used not only as a display apparatus for television broadcasting, a display apparatus such as a video conference system or a computer, but also as an image forming apparatus as an optical printer configured by using a photosensitive drum or the like. it can.

[0094]

The present invention will be described in detail below with reference to examples, but the present invention is not limited to these examples.

[Embodiment 1] A first embodiment of the present invention using a surface conduction electron-emitting device and matrix wiring will be described with reference to FIGS. In FIG. 1, a rear plate 81 is a substrate made of soda-lime glass and is made of an organic metal paste (M
The device electrodes 002 and 003 were formed by printing and firing (OD). The material is a 1000 angstrom Au thin film, and the central electrode has an electrode spacing of 20 μm and an electrode width of 30.
0 μm.

The X direction wiring (lower wiring) 72 is 480 after printing Ag paste ink (4028A manufactured by Noritake Co., Ltd.).
Printed wiring obtained by firing at around ℃, thickness about 13μ
m, width 100 μm, bent portion 77 at the position where the support frame 82 is formed
In, the length is 10 mm and the maximum amplitude is about 500 μm. The X-direction wiring (lower wiring) 72 is the device electrode 00.
2 is connected.

Reference numeral 16 is an insulator formed by printing a glass paste containing PbO as a main component (7723B manufactured by Noritake Co., Ltd.) and baking it at about 480 ° C., and it is connected to a Y-direction wiring (upper wiring) to be formed later. It is formed so as to cover the intersection. Thickness about 15μm, width 300μm, length 400μ
m.

Reference numeral 72 is a Y-direction wiring (upper wiring), which is Ag.
It is a printed wiring obtained by baking paste ink (4028A manufactured by Noritake Co., Ltd.) after printing at about 480 ° C., and intersects with the X-direction wiring (lower wiring) 72 at the upper part of the insulator 16, and the device electrode 003 Connected with. Thickness about 10μm,
The bent portion 77 at the position where the support frame 82 is formed has a width of 200 μm, a length of 10 mm, and a maximum amplitude of about 500 μm.

Reference numeral 004 denotes a conductive thin film, which is obtained by coating and baking an organic metal solution of Pd (CCP4230 manufactured by Okuno Chemical Industries Co., Ltd.) and has a thickness of about 200 angstroms.
It is a thin film composed of fine particles. After coating and forming a film on the entire surface, patterning is performed by photolithography, as shown in FIG.
As shown in FIG. 5, it was formed at the position on the device electrodes 002 and 003.

The electron source substrate 71 manufactured as described above
The support frame 82 and the face plate 86 are 5 mm above the
We oppose each other. The supporting frame 82 used here is made of soda lime glass and has a width of 15 mm, and is made of amorphous frit glass (LS-3081 manufactured by Nippon Electric Glass Co., Ltd.).
After calcination at 50 ° C, sealing was performed by heat treatment at 410 ° C.

A soda-lime glass was used for the substrate of the face plate 86. The phosphors 92 are color-coded for red (R), green (G), and blue (B), and a slurry in which a phosphor is mixed with a photosensitive resin is applied to a substrate, dried, and photolithographically processed. Formed by patterning.

The metal back 85 was formed by performing filming on the fluorescent film, forming an Al thin film having a thickness of about 300 angstrom by vacuum evaporation, and then erasing the film layer by baking.

After arranging the above in a vacuum envelope, a voltage is applied to the X-direction wiring (lower wiring) 72 and the Y-direction wiring (upper wiring) 73 to form a conductive thin film between the device electrodes 002 and 003.
04 was energized to obtain a crack-shaped electron emitting portion 005.

After that, an electron extraction voltage of 3 kV was applied using the metal back 85 as an anode electrode, and a voltage of 14 V was applied from the element electrodes 002 and 003 to the electron emission portion 005 through the XY wiring electrodes 72 and 73. Was done. By irradiating the phosphor with the emitted electrons and adjusting the amount of the emitted electrons, the phosphor 92 was made to emit light at an arbitrary intensity and an image could be displayed.

The envelope 8 whose inside is evacuated using this embodiment
8, the electron source substrate 71 was 40 cm square, and the number of electron-emitting devices was arranged in a matrix of 360 × 360. As a result of manufacturing 20 such envelopes 88, no defect caused by the extraction of the X-direction wiring (lower wiring) 72 and the Y-direction wiring (upper wiring) 73 to the outside occurred.

[Embodiment 2] A second embodiment of the present invention is shown in FIG.
This will be described with reference to FIG. The second embodiment is the same as the X in the first embodiment.
When forming the directional wiring (lower wiring) 72 and the Y-direction wiring (upper wiring) 73, the shape of the bent portion 77 is changed to that of the first embodiment, and only two bending points are provided. The manufacturing method is almost the same as that of the first embodiment, and only different patterns are used when printing the XY wiring. Even with such a structure, the same effect as in Example 1 could be obtained.

[Embodiment 3] A third embodiment of the present invention is shown in FIG.
This will be described with reference to FIG. The present embodiment has a ladder-like wiring structure in which only the (lower wiring) 72 is used as the wiring in the first embodiment. The manufacturing method can be performed by changing the print pattern in the process described in the first embodiment, and the formation of the insulator and the Y-direction wiring is unnecessary. Even with such a structure, the same effect as in Example 1 could be obtained.

[0108]

As described above, a thick film formed by a printing method is formed by connecting a portion of the lower portion of the supporting frame, which is sealed with a glass frit or the like, from the inside kept in a vacuum to the outside with an electron emitting element. In the image forming apparatus having a structure in which the X-direction wiring and the Y-direction wiring pass through, it is possible to make it difficult to form a linear void penetrating inside and outside by bending the wiring in the lower portion of the support frame. By adopting such a structure, it becomes possible to reduce the occurrence rate of leaks at the sealing position of the support frame even when a simpler manufacturing method is used.

As a result, even if a low-cost printing method is used instead of the costly photolithography, the yield is not lowered, and a large cost reduction is achieved.

[Brief description of drawings]

FIG. 1 is a perspective view illustrating a configuration of an image forming apparatus that is a feature of the present invention.

FIG. 2 is a manufacturing process explanatory view showing the first embodiment of the present invention.

FIG. 3 is an explanatory diagram showing a second embodiment of the present invention.

FIG. 4 is an explanatory diagram showing a third embodiment of the present invention.

FIG. 5 is a schematic view showing the structure of a flat surface conduction electron-emitting device of the present invention (where (a) is a plan view and (b) is a sectional view).

FIG. 6 is a schematic cross-sectional view showing a vertical surface conduction electron-emitting device of the present invention.

FIG. 7 is a schematic explanatory view showing a manufacturing process of the surface conduction electron-emitting device of the present invention.

FIG. 8 is a graph showing an example of a voltage waveform in an energization forming process that can be adopted when manufacturing the surface conduction electron-emitting device of the present invention.

FIG. 9 is a schematic diagram showing an example of a matrix arrangement type electron source substrate of the present invention.

FIG. 10 is a block diagram showing an example of a drive circuit for performing display according to an NTSC television signal on the image forming apparatus.

FIG. 11 is a schematic plan view showing an example of a fluorescent film.

FIG. 12 is a schematic perspective view showing an example of a display panel of the image forming apparatus of the present invention.

FIG. 13 is a schematic plan view showing an example of a ladder arrangement type electron source substrate of the present invention.

FIG. 14 is a schematic perspective view showing an example of a display panel of the image forming apparatus of the present invention.

FIG. 15 is a schematic plan view showing a conventional surface conduction electron-emitting device.

[Explanation of symbols]

001 Substrate 002, 003 Device electrode 004 Conductive thin film 005 Electron emitting part 16 Insulator 21 Step forming part 71 Electron source substrate 72 X direction wiring (lower wiring) 73 Y direction wiring (upper wiring) 74 Surface conduction electron emitting device 75 Connections 77 Bends 81 Rear plate 82 Support frame 83 Glass substrate 84 Fluorescent film 85 Metal back 86 Face plate 88 Envelope 91 Black member 92 Phosphor 101 Display panel 102 Scanning circuit 103 Control circuit 104 Shift register 105 Line memory 106 Synchronous signal Separation circuit 107 Modulation signal generator 110 Electron source substrate 111 Electron emission element 112 Common wiring (Dx1 to Dx10) for wiring the electron emission element 120 Grid electrode 121 Electrons pass through openings 112 Dox1, Dox2, to Doxm Terminals outside the container 123 G1, G2 to G connected to the grid electrode
n external container terminal Vx, Va DC voltage source

Claims (10)

[Claims] 1. A substrate having a thick film wiring, on which a large number of elements connected to the wiring are arranged, and a phosphor disposed on a substrate facing the substrate, which separates the substrates. An image forming apparatus, wherein the wiring is sealed by a supporting frame portion and the inside is held in a reduced pressure atmosphere, wherein the wiring has a bent structure at a lower portion of the supporting frame at a portion taken out to the outside. 2. An electron source substrate in which X-direction wirings and Y-direction wirings made of the thick film are arranged in a matrix, and electron-emitting devices are arranged at intersections of the XY wirings, and the electron-emitting devices are active devices. 2. A phosphor is disposed as a passive element on a substrate facing the electron source substrate, and the phosphor is sealed by a support frame portion separating them and held in a vacuum. The image forming apparatus described. 3. The image forming apparatus according to claim 1, wherein in the bent structure, two bent portions are provided in a lower portion of the support frame for one wiring lead-out portion on one side. 4. The image forming apparatus according to claim 1, wherein the bent structure is provided with three bent portions at a lower portion of the support frame for one wire extraction portion on one side. 5. An image forming apparatus having an electron-emitting device, wherein the electron-emitting device is a surface-conduction electron-emitting device composed of a thin film electrode and a conductive film of fine particles, and the image-forming device according to claim 1. An image forming apparatus according to any one of claims 1 to 3. 6. A substrate having a thick-film wiring, on which a large number of elements connected to the wiring are arranged, and a phosphor disposed on a substrate facing the substrate, which separates the substrates. In a method of manufacturing an image forming apparatus which is sealed by a supporting frame part and whose inside is held in a reduced pressure atmosphere, the wiring is formed in a bent structure at a lower part of the supporting frame of an extraction part to the outside. Manufacturing method of forming apparatus. 7. An electron source substrate in which X-direction wirings and Y-direction wirings made of the thick film are arranged in a matrix, and electron-emitting devices are arranged at intersections of the XY wirings, and the electron-emitting devices are active devices. 7. The fluorescent substance is arranged as a passive element on a substrate facing the electron source substrate, and the fluorescent substance is sealed by a support frame portion separating them and kept in a vacuum. Image forming apparatus manufacturing method. 8. The method for manufacturing an image forming apparatus according to claim 6, wherein in the bent structure, two bent portions are provided in a lower portion of the support frame of the one-side take-out portion of one wiring. . 9. The method of manufacturing an image forming apparatus according to claim 6, wherein in the bent structure, three bent portions are provided in a lower portion of the support frame of the one-side extraction portion of one wiring. 10. An image forming apparatus having an electron-emitting device, wherein the electron-emitting device is composed of a surface conduction electron-emitting device composed of a thin film electrode and a conductive film of fine particles, and the image forming apparatus is provided. An image forming apparatus according to any one of claims 1 to 4, which is a method for manufacturing an image forming apparatus.