JPH09251996A5

JPH09251996A5 -

Info

Publication number: JPH09251996A5
Application number: JP1996181297A
Authority: JP
Filing date: 1996-06-20
Publication date: 2004-07-08
Anticipated expiration: 2016-06-20

Description

【発明の名称】半導体装置及びその製造方法[Title of Invention] Semiconductor device and its manufacturing method

Claims

forming a metal conductive layer or a semiconductor layer;
forming an insulating film by a CVD method so as to cover the metal conductive layer or the semiconductor layer;
A method of manufacturing a semiconductor device, characterized in that the insulating film is etched to form contact holes,
A method of manufacturing a semiconductor device, comprising forming the insulating film so that the etching rate of the insulating film increases stepwise or continuously toward the upper layer.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the insulating film is made of silicon oxide.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the insulating film is formed by reducing the RF output stepwise or continuously.

forming a metal conductive layer or a semiconductor layer;
forming a first insulating film by a CVD method so as to cover the metal conductive layer or the semiconductor layer;
forming a second insulating film on the first insulating film by a CVD method;
a contact hole formed by etching the first insulating film and the second insulating film ,
A method for manufacturing a semiconductor device, comprising forming the second insulating film so that the etching rate of the second insulating film increases stepwise or continuously toward the upper layer.

5. A method for manufacturing a semiconductor device according to claim 4, wherein the first insulating film is made of silicon nitride or silicon oxynitride.

6. A method for manufacturing a semiconductor device according to claim 4, wherein the second insulating film is made of silicon oxide.

7. The method for manufacturing a semiconductor device according to claim 4, wherein the second insulating film is formed by reducing the RF output stepwise or continuously.

8. The method for manufacturing a semiconductor device according to claim 1, wherein the CVD method is a plasma CVD method.

A semiconductor device having a substrate and an insulating film formed on the substrate,
The insulating film has contact holes formed therein for forming wiring,
The semiconductor device is characterized in that the etching rate of the insulating film increases stepwise or continuously toward the upper layer.

10. The semiconductor device according to claim 9, wherein the insulating film is made of silicon oxide.

A semiconductor device having a substrate, a first insulating film formed on the substrate, and a second insulating film formed on the first insulating film,
the first insulating film and the second insulating film have contact holes formed therein for forming wiring;
The semiconductor device is characterized in that the etching rate of the second insulating film increases stepwise or continuously toward the upper layer.

12. The semiconductor device according to claim 11, wherein the first insulating film is made of silicon nitride or silicon oxynitride.

13. The method according to claim 11, wherein the second insulating film is made of silicon oxide. A semiconductor device characterized by:

A semiconductor device having a substrate, an underlayer film formed on the substrate, a semiconductor film formed on the underlayer film, a gate insulating film formed on the semiconductor film, a gate electrode formed on the gate insulating film, and an interlayer insulating film formed to cover the semiconductor film and the gate electrode,
the interlayer insulating film has contact holes formed therein for forming wiring connected to the semiconductor film or the gate electrode;
The semiconductor device is characterized in that the etching rate of the interlayer insulating film increases stepwise or continuously toward the upper layer.

15. The semiconductor device according to claim 14, wherein the interlayer insulating film is made of silicon oxide.

A semiconductor device having a substrate, an underlayer film formed on the substrate, a semiconductor film formed on the underlayer film, a gate insulating film formed on the semiconductor film, a gate electrode formed on the gate insulating film, a first interlayer insulating film formed so as to cover the semiconductor film and the gate electrode, and a second interlayer insulating film formed on the first interlayer insulating film,
the first interlayer insulating film and the second interlayer insulating film have contact holes formed therein for forming wiring connected to the semiconductor film or the gate electrode;
The semiconductor device according to claim 1, wherein the etching rate of the second interlayer insulating film increases stepwise or continuously toward the upper layer.

17. The semiconductor device according to claim 16, wherein the first interlayer insulating film is made of silicon nitride or silicon oxynitride.

18. The method according to claim 16, wherein the second interlayer insulating film is made of silicon oxide. A semiconductor device characterized by:

19. The semiconductor device according to claim 9, wherein the contact hole is tapered.