JPH09266221A - Manufacturing method of semiconductor device, semiconductor device, and shielding plate with sealing resin layer used therefor - Google Patents

Abstract

(57) [Abstract] (Corrected) [PROBLEMS] Manufacturing method of semiconductor device such as flip chip / surface mount array structure. A semiconductor element is mounted on a daughter board. Then, on the mounting surface of the semiconductor element 3 of the mounted daughter board 1, the shielding plate 15 with the sealing resin layer is provided with the semiconductor element 3 facing the recess 16 of the shielding plate 15 with the sealing resin layer. Place on daughter board 1. Then
By heating, semiconductor element 3 and daughter board 1
A semiconductor device is manufactured by filling a molten sealing resin in the voids and curing the resin. At this time, the sealing resin layer 14 is (a) an epoxy resin. (B) A novolac type phenolic resin. (C) Fused silica powder having a maximum particle size of 30 μm or less. (X) The pellet density is 99% or more of the true density. (Y) 150 prismatic pellets having a cross-sectional area of 1 mm × 2 mm
The penetration distance is 15 mm when it is heated and melted at ℃ for 10 minutes and penetrated between two mirror surface glass plates with a gap of 50 μm
that's all.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device represented by a surface mount array structure and the like, a semiconductor device, and a shielding plate with a sealing resin layer used therein.

[0002]

2. Description of the Related Art A recent demand for improving the performance of semiconductor devices is that, before mounting a semiconductor device on a motherboard, first, a semiconductor element is mounted on a daughter board having a wiring circuit formed in a face-down structure. Attention has been paid to a method of mounting on a motherboard by connecting bumps provided on the lower surface of the daughter board. The semiconductor package obtained by such a method is a package represented by a surface mount array structure, and is manufactured as follows. That is, as shown in FIG. 6, the semiconductor element 3 having the spherical electrode portion 2 is mounted on the other surface of the daughter board 1 having the internal wiring and the plurality of spherical bumps 8 provided on one surface (flip chip mounting). ). Then, a liquid sealing resin composition is injected into the gap between the semiconductor element 3 and the daughter board 1 and the resin composition is cured to form the sealing resin layer 4 as shown in FIG. To do. Further, as shown in FIG. 8, a semiconductor device is manufactured by covering and fixing the semiconductor element 3 mounting surface with an aluminum cap 5 via adhesive layers 6a and 6b. Then, as shown in FIG. 9, the semiconductor device thus obtained is mounted on the surface of the mother board 7 on which the wiring circuit is formed, via the plurality of spherical bumps 8 formed on one surface of the daughter board 1. As a result, a semiconductor package having a flip chip / surface mount array structure is obtained.

[0003]

The above-mentioned semiconductor package has been attracting attention from the viewpoint of electrical characteristics.
The manufacturing process is complicated, and the high cost including the process cost is a major obstacle.

The present invention has been made in view of the above circumstances, and a method of manufacturing a semiconductor device such as a flip chip / surface mount array structure, which is easy to manufacture, and a semiconductor device obtained by the method, It is an object of the present invention to provide a shielding plate with a sealing resin layer used therefor.

[0005]

In order to achieve the above object, the present invention provides a step of mounting a semiconductor element on the substrate by abutting an electrode portion of the semiconductor element on a wiring electrode of the wired circuit board, and a shield. A step of partially forming a sealing resin layer (α) below so as to leave a corresponding portion corresponding to the semiconductor element on one surface of the plate to form a shielding plate with a sealing resin layer; Step of stacking the sealing resin layer-provided shield plate and the semiconductor element mounting substrate with the semiconductor element of the semiconductor element-mounting substrate facing the corresponding portion of the resin plate-equipped shielding plate, and heating the whole. Then, a method of manufacturing a semiconductor device comprising a step of filling a gap between the printed circuit board and the semiconductor element with a sealing resin in a molten state and curing the resin to seal the gap between the substrate and the semiconductor element. This is the first summary. (Α) formed by the following sealing resin composition (A),
And the resin layer for sealing provided with the following characteristics (x) and (y). (A) A sealing resin composition containing the following components (a) to (c). (A) At least one of a crystalline epoxy resin and a bifunctional epoxy resin that is solid at room temperature. (B) A novolac type phenolic resin. (C) A fused silica powder having a maximum particle size of 30 μm or less. (X) The pellet density is 99% or more of the true density. (Y) 150 prismatic pellets having a cross-sectional area of 1 mm × 2 mm
The penetration distance is 15 mm when it is heated and melted at ℃ for 10 minutes and penetrated between two mirror surface glass plates with a gap of 50 μm
that's all.

Further, a semiconductor element is mounted on the wiring electrode surface of the printed circuit board via its own electrode layer, and a shield plate is stacked on the upper surface of the semiconductor element to form a gap between the printed circuit board and the semiconductor element. A second aspect is a semiconductor device having a sealing resin layer formed therein. Further, a third aspect of the present invention is a shielding plate with a sealing resin layer, in which the sealing resin layer (α) is partially formed on one surface of the shielding plate.

That is, according to the present invention, the sealing resin layer is partially formed on one surface of the shielding plate so as to leave a corresponding portion corresponding to the semiconductor element, thereby forming the shielding plate with the sealing resin layer.
The shielding resin layer-equipped shielding plate and the semiconductor element mounting substrate are superposed on the corresponding portion of the encapsulating resin layer-equipped shielding plate and the semiconductor element of the semiconductor element mounting substrate facing each other, and heated. In this way, the gap between the printed circuit board and the semiconductor element is filled with a sealing resin in a molten state and cured to seal the gap between the substrate and the semiconductor element with a resin. Therefore, the resin sealing step of the gap between the substrate of the printed circuit board on which the semiconductor element is mounted and the element, and the stacking step of the shielding plate can be performed in one working step, which saves labor in the manufacturing step. Can be achieved. And, as the sealing resin layer formed on the shielding plate with the sealing resin layer, a resin having specific physical properties as well as using the above-mentioned special sealing resin composition [sealing resin layer ( [alpha]]] is used, a good sealing resin layer can be formed without problems such as generation of voids in the resin sealing work.

Above all, in the above-mentioned special sealing resin composition, by setting the content ratio of the component (c) to a specific ratio, the resin sealing of the void between the printed circuit board and the semiconductor element is further improved. It can be carried out satisfactorily, and a good sealing resin layer can be formed.

[0009]

Next, the present invention will be described in detail.

In the method of manufacturing a semiconductor device of the present invention, a shielding plate with a resin layer for encapsulation, which has not been used in the past, is used in manufacturing the semiconductor device. By using this shielding plate with the resin layer for sealing, the manufacturing process, which has been complicated in the past, can be shortened and it is possible to perform the process in one step.

In the above shielding plate with a sealing resin layer, for example, an adhesive layer is formed on one entire surface of the shielding plate, and the sealing resin (underfill resin) layer is partially formed through the adhesive layer. It was formed.

Examples of the material of the shielding plate include aluminum and aluminum alloy plates, copper and copper alloy plates, and metal plates such as iron. Generally, an aluminum plate is preferably used from the viewpoints of light weight, high heat conduction, and corrosion resistance.

The underfill resin layer is preferably formed, for example, by using the encapsulating resin composition (A) shown below from the characteristics of the encapsulation cured product.

The encapsulating resin composition (A) is obtained by using a specific epoxy resin (a component), a novolac type phenol resin (b component), a specific silica powder and a (c component). It is preferable that it is solid at room temperature. The normal temperature specifically refers to a range of 20 to 50 ° C.

Examples of the specific epoxy resin (component a) include a crystalline epoxy resin and a bifunctional epoxy resin which is solid at room temperature. Specifically, from the viewpoint of low melt viscosity, the following general formula (1) ), The formula (2) and the formula (3). These may be used alone or in combination of two or more.

[0016]

Embedded image

[0017]

Embedded image

[0018]

Embedded image

In the epoxy resin having the structure represented by the above formulas (1) to (3), the epoxy equivalent is preferably 150 to 230.
It is preferable to use one having a melting point of 60 to 160 ° C. in g / eq.

Novolak type phenolic resin (component b) used together with the above specific epoxy resin (component a)
There is no particular limitation, and commonly used ones are used, but it is preferable to use one having a low viscosity. Then, as the novolac type phenolic resin, it is preferable to use one having a hydroxyl group equivalent of 80 to 120 g / eq and a softening point of 80 ° C. or less. More preferably, the hydroxyl equivalent is 90 to 110 g / eq and the softening point is 50 to 70 ° C. Particularly preferably, the hydroxyl equivalent is 100.
The softening point is 55 to 65 ° C. at 110 g / eq.

The mixing ratio of the specific epoxy resin (a component) and the novolak type phenol resin (b component) is such that the hydroxyl group equivalent in the novolac type phenol resin is 0.5 with respect to 1 equivalent of the epoxy group in the epoxy resin. It is preferable to set in the range of 1.6. More preferably 0.8 to
It is to set in the range of 1.2.

The specific silica powder (component c) used together with the above components a and b is spherical fused silica powder. The fused silica powder (component c) having an average particle size of 3 to 20 μm is preferably used, and particularly preferably 5 to 13 μm. At the same time, it is necessary to use a material having a maximum particle size of 30 μm or less. Particularly preferably, the maximum particle size is 15 to 25 μm.
That is, when the maximum particle size exceeds 30 μm, FIGS.
In the structure as shown in (1), when the voids between the semiconductor element 3 and the daughter board 1 and the spherical bumps 8 are continuously arranged, silica powder, that is, the resin composition cannot be filled between them. Further, when the encapsulating resin composition (A) is produced, the silica powder is dispersed in the molten state of the epoxy resin and the phenol resin.
This is because the silica powder precipitates and the components become non-uniform by cooling at room temperature. From this point of view, the particle size of the specific silica powder (component c) is
1 of the distance of the space between the semiconductor elements mounted on this substrate [the space sealed with the resin composition for sealing (A)]
It is preferably set to / 2 or less. More preferably 1
It is / 10 to 1/5. That is, by setting the particle size to ½ or less, when filling the molten resin composition for encapsulation (A) into the gap between the printed circuit board and the semiconductor element, unfilled due to clogging of silica powder. , Because voids, etc. do not occur and it can be done well.

The content of the specific silica powder (component (c)) is 50% by weight or more and 80% or more of the total amount of the encapsulating resin composition (A).
It is preferable to set it in the range of less than wt%. It is particularly preferably 60 to 75% by weight. That is, when the content of the silica powder (component c) is less than 50% by weight, the linear expansion coefficient of the encapsulating resin composition (A) is as shown in FIG. 2 to FIG. 8 is greatly exceeded, and peeling occurs due to stress. On the other hand, if it is 80% by weight or more, the melt viscosity of the encapsulating resin becomes high and the filling property becomes poor.

The encapsulating resin composition (A), which is the underfill resin layer forming material, contains, in addition to the components a to c,
If necessary, a stress reducing agent such as a silicone compound (side chain ethylene glycol type dimethyl siloxane, etc.),
A flame retardant, a wax such as polyethylene or carnauba, a coupling agent such as a silane coupling agent (γ-glycidoxypropyltrimethoxysilane), or the like may be appropriately mixed.

Examples of the flame retardant include brominated epoxy resin and the like, to which a flame retardant auxiliary such as diantimony trioxide is used.

The encapsulating resin composition (A) used in the present invention is obtained, for example, as follows. That is, the a component, the b component and the c component are mixed in an externally heatable metal container at 150 ° C. for 30 minutes to 1 hour,
After lowering the temperature to 120 ° C., a catalyst for adjusting the reactivity is added and uniformly mixed. Then, the above-mentioned uniform mixing is performed, and then a rolled sheet is formed, which is punched into a desired shape and pelletized.

The catalyst compounded for adjusting the reactivity is not particularly limited, and examples thereof include those conventionally used as a curing accelerator. Examples thereof include triphenylphosphine, tetraphenylphosphate, tetraphenylborate, 2-methylimidazole and the like.

The method of mixing the above components and the method of producing pellets is not limited to the above method. For example, a biaxial roll or a triaxial roll can be used in the mixing. Also, as for the method for producing the pellets, a method such as a casting method can be used in addition to punching after forming the sheet.

The shape of the pellet is not particularly limited, but in consideration of the shape of the semiconductor element mounting substrate which is the object of use of the encapsulating resin layer-containing shielding plate described later, etc., it has a rectangular frame shape. It is preferable to set.

The encapsulating resin layer-equipped shielding plate used in the method for manufacturing a semiconductor device of the present invention has, for example, an adhesive layer formed on one surface of a shielding plate of a predetermined size, and the adhesive layer is interposed therebetween. By stacking square frame-shaped underfill resin,
The sealing resin layer-attached shield plate 15 as shown in FIGS. 1A and 1B is obtained. In FIG. 1, 12 is a shielding plate, 1
3 is an adhesive layer, and 14 is a sealing resin (underfill resin) layer.

As a method of forming the adhesive layer 13, for example, there is a method of forming it by pasting an epoxy resin film adhesive on a shielding plate.

Further, the shielding plate 15 with the sealing resin layer is provided with the adhesive layer 13, but the configuration is not particularly limited to this, and the adhesive layer 13 is not necessarily provided. . For example, without providing the adhesive layer 13,
The underfill resin layer 14 may be formed by directly pattern-coating a liquid or pellet-shaped underfill resin forming material in a predetermined shape (square frame shape or the like) on the shielding plate 12. It is preferable to provide the adhesive layer 13 from the viewpoint that the underfill resin can be fixed to the shielding plate by utilizing the tackiness of the adhesive layer 13 in the module manufacturing process.

Thus, as an example, the shielding resin layer-equipped shielding plate 15 of the present invention has the adhesive layer 13 formed on the entire one surface of the shielding plate 12 as shown in FIG. A rectangular frame-shaped sealing resin (underfill resin) layer 14 is formed along the periphery of the shielding plate 12 with the layer 13 interposed therebetween. A concave portion 16 is formed in the central portion by the shielding plate 12 and the square frame-shaped underfill resin layer 14. The depth, size, and
The thickness and size of the underfill resin layer 14 is the same as the thickness of the semiconductor element mounted on the substrate to be stacked, plus a spherical bump, or +1 to -0.5 mm.
It is preferably set to ± 0 to −0.1 mm. Specifically, the thickness of the shielding plate 12 is set to 0.1 to 20 mm, preferably 1 to 3 mm. Moreover, the size is +0.1 to +20 mm with respect to the size of the semiconductor element used.
In addition, it is preferably set to +1 to +5 mm. The thickness of the adhesive layer 13 is set to 0.005 to 3 mm, preferably 0.005 to 0.5 mm. Furthermore, the thickness of the underfill resin layer 14 is set to 0.2 to 6 mm, preferably 0.5 to 4 mm.

The semiconductor device of the present invention is manufactured, for example, as follows. That is, first, the shielding plate with the sealing resin layer is formed as described above (see FIG. 1). on the other hand,
As shown in FIG. 2, on the other surface of the daughter board 1 having internal wiring and a plurality of spherical bumps 8 provided on the lower surface,
By abutting the internal wiring and the spherical electrode portion 2 of itself,
Preferably, the semiconductor element 3 is mounted by heating (flip chip mounting). Then, as shown in FIG.
The flip-chip mounted daughter board 1 has a semiconductor element 3 mounting surface on which the semiconductor element 3 faces the recess 16 of the encapsulation resin layer-attached shield plate 15 and the encapsulation resin layer-attached shield plate. Place 15 on daughter board 1.
Then, by heating the whole, the underfill resin layer 14 is melted into a molten state, and the capillary state is used to fill the gap between the semiconductor element 3 and the daughter board 1 with the molten underfill resin. Then, the voids are resin-sealed by curing. In this way, the semiconductor device as shown in FIG. 4 is manufactured. In FIG. 4, 17 is a sealing resin layer formed of an underfill resin.

The heating temperature for bringing the underfill resin layer 14 into a molten state is 100 to 250 ° C. in consideration of the deterioration of the semiconductor element 3 and the daughter board 1, the melting temperature and deterioration of the spherical bumps 8, and the like. It is preferable to set to the range of 130 to 150 ° C. Examples of the heating method include an infrared reflow oven, a dryer, a hot air blower, and a hot plate.

In the semiconductor device manufactured as described above, the size of the semiconductor element 3 is usually 5 to 20 m in width.
It is set to m × length 5 to 20 mm × thickness 0.1 to 1.0 mm. More preferred is a width of 8 to 18 mm x a length of 8 to 18
mm × thickness 0.3 to 0.8 mm. Also, the daughter board 1 on which a wiring circuit for mounting the semiconductor element 3 is formed.
The size of is usually 10-70 mm width x 10-70 length
mm × thickness is set to 0.05 to 3.0 mm. More preferably, the width is 15 to 50 mm, the length is 15 to 50 mm, and the thickness is 0.1 to 2.0 mm. The distance between the semiconductor element 3 and the daughter board 1 filled with the molten underfill resin is usually 10 to 150 μm. In particular, the distance between the two is preferably set to 30 to 100 μm.

As the underfill resin layer (sealing resin layer) 14 formed on the shielding plate 15 with the sealing resin layer,
The density of the pellets (underfill resin layer 14 portion) must be 99% or more of the true density [characteristic (x)]. That is, the pellet density is 99 relative to the true density.
By setting a high true density of at least%, it is possible to prevent the air inside the pellets from being brought into the cured product and causing this air to form voids. The pellet density (%) is a value calculated by the following formula.

[0038]

[Equation 1] Pellet density (%) = [(specific gravity of pellet) /
(Specific gravity of cured product)] × 100

Further, the underfill resin layer (sealing resin layer) 14 must have the following characteristic (y). That is, using the encapsulating resin composition that is the material for forming the underfill resin layer 14, prismatic pellets having a cross-sectional area of 1 mm × 2 mm are produced according to the above method. Then, the prismatic pellets are heated and melted at 150 ° C. for 10 minutes to be melted and penetrated between two mirror surface glass plates having a void of 50 μm, and the penetration distance at that time is 15 mm or more [Characteristic (y)]. Need to have. The penetration distance is more preferably 18 mm or more. Further, the sealing resin layer 17 formed by sealing with the underfill resin, that is, the underfill resin, has a melt viscosity at each use temperature of 1 to 100 pois.
e, gel time at 150 ° C. for 0.5 to 22 minutes,
The cured product has a linear expansion coefficient of 17 to 40 ppm /
C. is preferred. Particularly preferably, the melt viscosity is 1
.About.30 poise, gel time at 150.degree.
The linear expansion coefficient is 22 to 30 ppm / ° C. for 5 to 15 minutes. This is because matching the linear expansion coefficient of the interface sealing resin with the linear expansion coefficient of the solder, which is an interface joint, eliminates stress concentration and improves conduction reliability.
That is, by setting the melt viscosity within the above range, it becomes easy to fill the space between the semiconductor element 3, the daughter board 1 and the spherical bump 8. Further, by setting the gel time within the above range, it becomes easy to fill the voids between the semiconductor element 3, the daughter board 1 and the spherical bump 8 as in the above case. Further, by setting the linear expansion coefficient within the above range, the stress generated by the heat applied to the semiconductor element 3, the daughter board 1 and the spherical bump 8 is reduced. The melt viscosity is measured by a cone plate viscometer, and the gel time is
It was measured by the hot plate cavity method. In addition, the coefficient of linear expansion is calculated by the thermal mechanical analysis (TM).
It was measured according to A).

The semiconductor device thus obtained is, for example, as shown in FIG. 5, via the plurality of spherical bumps 8 formed on the lower surface of the daughter board 1, the mother board 7
It is used as a component in such a form as to be mounted on a surface mount array structure.

[0041]

As described above, according to the present invention, the special sealing resin layer is partially formed so as to leave the corresponding portion corresponding to the semiconductor element on one surface of the shielding plate. A shielding plate with a resin layer is formed. Then, the sealing resin layer-equipped shielding plate and the semiconductor element mounting substrate are superposed on the corresponding portion of the encapsulating resin layer-equipped shielding plate with the semiconductor element of the semiconductor element mounting substrate facing each other, and heated. By doing so, the gap between the printed circuit board and the semiconductor element is filled with a sealing resin in a molten state and cured to seal the gap between the substrate and the semiconductor element with a resin. Therefore, it is possible to perform the resin encapsulation process of the substrate on which the semiconductor device is mounted and the void formed by the device, and the stacking process of the shielding plate in a single manufacturing process, saving labor in the entire manufacturing process. To do. Therefore, the cost of the semiconductor device can be reduced. The encapsulating resin layer formed on the encapsulating resin layer-equipped shielding plate is formed of a specific encapsulating resin composition which is solid at room temperature and particularly contains the components (a) to (c). Further, since it is a special layer having the above-mentioned specific characteristics, it is possible to form a good sealing resin layer without causing a problem such as generation of voids in the resin sealing work.

In the special encapsulating resin layer of the shielding plate with encapsulating resin layer, the content ratio of the component (c) in the encapsulating resin composition forming the same should be set within a specific range. Thus, it is possible to perform resin sealing of the gap between the printed circuit board and the semiconductor element, with even better workability,
Moreover, a good sealing resin layer can be formed.

Next, the present invention will be described based on examples.

First, each component shown below was prepared prior to the examples.

[Epoxy resin a1] A biphenyl type epoxy resin having a structure represented by the following formula (4).

[0046]

Embedded image

[Epoxy resin a2] An epoxy resin having a structure represented by the following formula (5).

[0048]

Embedded image

[Epoxy resin a3] A biphenyl type epoxy resin having a structure represented by the following formula (6).

[0050]

[Chemical 6]

[Curing agent b1] A novolac type phenol resin (hydroxyl group equivalent: 104 g / eq, softening point 59 ° C.).

[Silica powders c1 to c4] Spherical fused silica powders shown in Table 1 below.

[0053]

[Table 1]

[Catalyst d1] Triphenylphosphine.

[Catalyst d2] Mixture of tetraphenyl phosphate and tetraphenyl borate (molar mixing ratio 1
/ 1).

[Flame Retardant] Brominated epoxyphenol novolac.

[Flame retardant aid] Antimony trioxide.

[Wax] Polyethylene.

[Silicone Compound] A side chain ethylene glycol type dimethyl siloxane.

[Coupling Agent] γ-glycidoxypropyltrimethoxysilane.

[Preparation of Resin Composition] Using the above components,
The components were mixed in the ratios shown in Tables 2 to 4 below to prepare resin compositions that are materials for forming an underfill resin layer.

The resin composition was heated and melted and cured (conditions: 150 ° C. × 20 minutes + 175 ° C. × 300 minutes) to determine the linear expansion coefficient of the cured product by thermomechanical analysis (TM.
It was measured according to A). Further, each melt viscosity and gel time were measured according to the method described above. Furthermore, using each of the above components, a cross-sectional area of 1 mm x 2 mm x length of 20 mm
Then, a prismatic pellet was prepared. Next, the prismatic pellet was heated and melted at 150 ° C. for 10 minutes, and was made to enter between two mirror-finished glass plates having a 50 μm void formed by using a spacer, and the penetration distance was measured. The results are also shown in Tables 2 to 4 below.

[0063]

[Table 2]

[0064]

[Table 3]

[0065]

[Table 4]

[0066]

Examples 1 to 24 Using the above resin compositions,
This was directly made into a sheet, cooled and punched to produce a square frame pellet having a predetermined size. The size and thickness of the square-shaped pellet having the shape of a square frame are shown in Tables 5 to 7 below. The square frame-shaped pellet density was 99% or more with respect to the true density.

Then, an epoxy resin film adhesive layer (thickness: 25 μm) is formed on an aluminum plate of a predetermined size.
The shielding plate with an underfill resin layer was produced by pasting the square frame-shaped pellets through m) (see FIG. 1). The above aluminum plate (aluminum plate)
The sizes and thicknesses of these are shown in Tables 5 to 7 below.

[0068]

[Table 5]

[0069]

[Table 6]

[0070]

[Table 7]

Using the underfill resin layer-equipped shielding plates of the respective Examples and Comparative Examples thus obtained, a sample product resembling a semiconductor device for confirming the filling effect was manufactured as follows. First of all, there are three sizes of thickness 0.37 mm (5 × 5 mm, 10 × 10 mm, 15 × 15).
mm) silicon chips were prepared. Then, FIG.
As shown in (a) and (b), the silicon chip 22 is mounted face down on a glass plate 21 (size: 22 × 22 mm) through a spacer 20 having a length of 50 μm and sealed by a heater. 150 ℃ which is the stop temperature
Heated up. In this state, as shown in FIG.
The underfill resin layer-provided shield plate 23 so that the silicon chip 22 and the underfill resin layer-formed surface face each other.
Was placed on the glass plate 21. Next, a load of 200 g was applied from above the shielding plate 23, and the shielding plate 23 was allowed to stand in that state to fill the gap between the glass plate 21 and the silicon chip 22 with the molten underfill resin. After 10 minutes, the sample was separated from the heater, and the state of permeation of the underfill resin into the voids and the presence or absence of voids in the formed sealing resin layer were visually confirmed from the glass plate 21 surface. As a result, those which were completely filled in the voids and void formation was not confirmed were indicated by ◯, and those in which void formation was confirmed were indicated by x and shown in Tables 8 to 10 below.

[0072]

[Table 8]

[0073]

[Table 9]

[0074]

[Table 10]

From the results of Tables 8 to 10 above, in all of the example products, the voids between the semiconductor element and the glass plate were well filled, and no trace of void formation was observed. From this, it can be seen that the resin sealing work for the voids was performed well even though the voids were filled with the sealing resin and the aluminum plates were stacked in one step.

[Brief description of drawings]

FIG. 1A is a perspective view showing a shielding plate with a sealing resin layer according to the present invention, and FIG. 1B is a sectional view thereof.

FIG. 2 is an explanatory cross-sectional view showing a manufacturing process of a semiconductor device of the present invention.

FIG. 3 is an explanatory sectional view showing a manufacturing process of the semiconductor device of the present invention.

FIG. 4 is a cross-sectional view showing a semiconductor device of the present invention.

FIG. 5 is a cross-sectional view showing a state in which the semiconductor device of the present invention is mounted on a motherboard.

FIG. 6 is an explanatory cross-sectional view showing a manufacturing process of a conventional semiconductor device.

FIG. 7 is an explanatory sectional view illustrating a manufacturing process of a conventional semiconductor device.

FIG. 8 is a sectional view showing a conventional semiconductor device.

FIG. 9 is a cross-sectional view showing a state in which a conventional semiconductor device is mounted on a motherboard.

FIG. 10A is a side view showing components used as a sample product for confirming the filling effect of the embodiment, and FIG.
Is a plan view thereof.

FIG. 11 is an explanatory cross-sectional view showing the manufacturing process of the filling effect confirmation sample product of the above embodiment.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Daughter board 2 Spherical electrode part 3 Semiconductor element 14 Sealing resin layer 15 Shielding plate with sealing resin layer 16 Recess

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI Technical indication location C08L 63/00 NJS (72) Inventor Makoto Kuwamura 1-2 Homzumi Shimohozumi, Ibaraki-shi, Osaka Nitto Electric Works Co., Ltd. (72) Inventor Shinichiro Suto, 1-2, Shimohozumi, Ibaraki City, Osaka Prefecture Nitto Electric Works Co., Ltd.

Claims (5)

[Claims] 1. A step of abutting an electrode portion of a semiconductor element on a wiring electrode of a printed circuit board to mount the semiconductor element on the substrate, and leaving a corresponding portion corresponding to the semiconductor element on one surface of a shield plate. The step of partially forming the encapsulating resin layer (α) below to form the encapsulating resin layer-equipped shielding plate, and the semiconductor element mounting substrate on the corresponding portion of the encapsulating resin layer-equipped shielding plate. The step of superimposing the shielding plate with the resin layer for sealing and the semiconductor element mounting substrate in a state where the semiconductor element is faced with each other, and heating the whole so that a molten state is generated in a gap between the printed circuit board and the semiconductor element. The method for manufacturing a semiconductor device, comprising the step of: filling with a sealing resin and curing the resin to seal a gap between the substrate and the semiconductor element. (Α) formed by the following sealing resin composition (A),
And the resin layer for sealing provided with the following characteristics (x) and (y). (A) A sealing resin composition containing the following components (a) to (c). (A) At least one of a crystalline epoxy resin and a bifunctional epoxy resin that is solid at room temperature. (B) A novolac type phenolic resin. (C) A fused silica powder having a maximum particle size of 30 μm or less. (X) The pellet density is 99% or more of the true density. (Y) 150 prismatic pellets having a cross-sectional area of 1 mm × 2 mm
The penetration distance is 15 mm when it is heated and melted at ℃ for 10 minutes and penetrated between two mirror surface glass plates with a gap of 50 μm
that's all. 2. The (c) in the encapsulating resin composition (A).
The method for manufacturing a semiconductor device according to claim 1, wherein the content ratio of the components is set in a range of 50% by weight or more and less than 80% by weight of the entire encapsulating resin composition. 3. A semiconductor element is mounted on a wiring electrode surface of a printed circuit board via its own electrode layer, and a shielding plate is stacked on the upper surface of the semiconductor element to form a gap between the printed circuit board and the semiconductor element. A semiconductor device, wherein a sealing resin layer is formed on the semiconductor device. 4. A shield plate with a sealing resin layer, which is obtained by partially forming the following sealing resin layer (α) on one surface of the shield plate. (Α) formed by the following sealing resin composition (A),
And the resin layer for sealing provided with the following characteristics (x) and (y). (A) A sealing resin composition containing the following components (a) to (c). (A) At least one of a crystalline epoxy resin and a bifunctional epoxy resin that is solid at room temperature. (B) A novolac type phenolic resin. (C) A fused silica powder having a maximum particle size of 30 μm or less. (X) The pellet density is 99% or more of the true density. (Y) 150 prismatic pellets having a cross-sectional area of 1 mm × 2 mm
The penetration distance is 15 mm when it is heated and melted at ℃ for 10 minutes and penetrated between two mirror surface glass plates with a gap of 50 μm
that's all. 5. The shielding plate with a sealing resin layer according to claim 4, wherein an adhesive film layer is provided between the shielding plate and the sealing resin layer.