JPH09275178A - Semiconductor package and manufacturing method thereof - Google Patents

Abstract

(57) Abstract: In a semiconductor package used for various electronic devices, it is an object to realize a high density electronic circuit by miniaturizing the package. SOLUTION: A semiconductor IC chip 9 and a metal conductor layer 8 connected by wire bonding are molded into an insulating resin molded body 12, which is covered with an insulating resist layer 13 so that a part of the metal conductor layer 8 is exposed on one surface thereof. By providing the protruding external connection terminals 14 on the exposed metal conductor layer 8, a semiconductor package excellent in miniaturization and high-density mounting property is obtained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package used in various electronic devices and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, as electronic devices have become smaller and lighter and have higher functions, the demand for small semiconductor packages corresponding to higher density of electronic circuits has significantly increased.

Various types of conventional semiconductor packages are used according to the purpose, but the most commonly used package is shown in FIG.
There are the following.

In FIG. 5, 1 is a lead frame, 2 is a semiconductor IC chip, 3 is a conductive resin, 4 is a gold wire, 5 is a molded resin molded body, and 6 is an external connection lead terminal.

This semiconductor package uses a lead frame 1 obtained by processing a metal plate of iron-nickel alloy, copper or the like into a predetermined pattern shape in advance by a punching method, an etching method or the like, and a semiconductor IC chip 2 is placed on the face thereof. Mounted up and fixed with a conductive resin 3, the external connection terminal of the semiconductor IC chip 2 and the lead frame 1 are electrically connected with a gold wire 4 by a wire bond method, and thereafter, the semiconductor is made of an insulating resin by transfer molding. IC chip 2
The external connection lead terminal 6
Is an L-shaped piece that protrudes at regular intervals from the four directions of the molded resin molded body 5.

[0006]

In such a semiconductor package, since a lead frame obtained by processing a metal plate into a required pattern shape in advance is used, the pattern pattern is restricted and miniaturization is difficult to achieve. However, because the external lead terminals of the package are configured to protrude at a constant pitch from the resin-molded body,
There has been a problem that the external dimensions of the package become large and it is difficult to downsize the semiconductor package.

The present invention aims to reduce the size of a semiconductor package.

[0008]

In order to solve this problem, the present invention provides an insulating resin molding by molding at least one semiconductor IC chip and a metal conductor layer connected to the semiconductor IC chip by wire bonding. And a semiconductor package having an external connection terminal on a metal conductor layer, at least a portion of which is exposed on one surface of the insulating resin molded body.

According to the present invention, it is possible to obtain a semiconductor package which is small in size and excellent in high-density mounting.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION The invention according to claim 1 of the present invention is an insulating resin molded body obtained by molding at least one semiconductor IC chip and a metal conductor layer connected to the semiconductor IC chip by wire bonding. An external connection terminal is provided on a metal conductor layer of which at least a part is exposed on one surface of the insulating resin molded body, and the external connection terminal is directly provided at an arbitrary position of the insulating resin molded body in which a semiconductor IC chip is embedded. By being directly formed, the package can be downsized.

According to a second aspect of the present invention, there is provided a semiconductor package in which a protruding metal conductor is provided on an external connection terminal. By providing a protruding metal conductor on the external connection terminal, solder connection to a printed wiring board is achieved. A semiconductor package with improved reliability can be obtained.

According to a third aspect of the present invention, a desired wiring circuit-shaped metal conductor layer for connecting to a semiconductor IC chip is built up on one main surface of the metal support, and the metal conductor layer of the metal conductor layer is formed. At least one semiconductor IC chip is mounted face-up at a predetermined position, and the external connection terminal of the semiconductor IC chip and the metal conductor layer are electrically connected by a wire bond method, and then the semiconductor IC chip mounting surface. Is molded with an insulating resin to produce an insulating resin molded body, and then the metal support is chemically dissolved and removed to expose the metal conductor layer in the form of a wiring circuit on one main surface of the insulating resin molded body. A method for manufacturing a semiconductor package in which an external connection terminal is provided at a position where the metal conductor layer is exposed,
By forming a wiring circuit-shaped metal conductor layer for directly connecting to the semiconductor IC chip on the metal support, there is no restriction on the shape of the wiring pattern, and the miniaturization of the package can be achieved by achieving fine wiring. Is.

An embodiment of the present invention will be described below with reference to FIGS. 1 to 4. (Embodiment 1) FIGS. 1 to 4 are sectional views showing a manufacturing process of a semiconductor package according to the present invention, in which a metal support 7 has a wiring circuit shape for connecting to a semiconductor IC chip 9. It serves as a support for forming the metal conductor layer 8, and is made of electrolytic copper foil or aluminum foil having a film thickness of 18 to 35 μm.

The metal conductor layer 8 is a conductor layer in the form of a wiring circuit for connecting to the semiconductor IC chip 9, and is made of metal copper by electrolytic copper plating.

The semiconductor IC chip 9 is a circuit element that requires a package, and an electric circuit is composed of a large number of transistors on a silicon substrate, and external connection terminals are composed of an aluminum film. The adhesive layer 10 is
It is for fixing the semiconductor IC chip 9 to the metal conductor layer 8, and is made of a conductive resin made by kneading fine silver powder with a thermosetting resin. The thin metal wire 11 is
This is for electrically connecting the semiconductor IC chip 9 and the metal conductor layer 8 by the wire bond method.
It is composed of a gold wire or a copper wire having a diameter of about 5 μφ.

The insulating resin molded body 12 is obtained by molding the semiconductor IC chip 9 with an insulating resin by a transfer molding method or an injection molding method, and is thermosetting thermoplastic such as epoxy resin or polyphenylene sulfide resin (PPS resin). It is made of resin.

The insulating resist layer 13 is for selectively insulating the wiring circuit-shaped metal conductor layer 8 formed on the insulating resin molded body 12 in which the semiconductor IC chip 9 is molded to expose the external connection terminal portion. In this case, the ultraviolet curable acrylic resin is formed by the screen printing method.

The external connection terminal 14 is a terminal for connecting the semiconductor package to the printed wiring board, and is a solder metal obtained by applying cream solder to the metal conductor layer 8 not covered with the insulating resist layer 13 and heating and melting it. It is composed by.

In the semiconductor package obtained by this method, the external connection terminal 14 is directly formed at an arbitrary position of the insulating resin molded body 12 in which the semiconductor IC chip 9 is molded, so that the package can be made thin and compact. It can be achieved.

(Embodiment 2) A method of manufacturing a semiconductor package will be specifically described below. Embodiment 2
Then, as shown in FIG. 1, the metal support 7 has a thickness of 3
Using a 5 μm electrolytic copper foil, first apply a photosensitive resist on one main surface of this electrolytic copper foil, and then use photolithography technology to form a resist pattern so that the copper foil is exposed in the desired wiring circuit shape. At the same time, a resist film which can be easily peeled off with a solvent or an alkaline solution was formed on the other surface.

Then, the metal support 7 having the resist pattern formed thereon is subjected to electrolytic copper plating using a copper sulfate bath to deposit metal copper in the form of a wiring circuit on one main surface of the metal support 7. Furthermore, a noble metal such as gold, silver, or palladium was plated to a thickness of 1 μm or less on a necessary portion of the metal conductor layer 8 in order to stabilize the electrical connection with the semiconductor IC.

Next, as shown in FIG. 2, an adhesive layer 10 is applied at a predetermined position on a metal conductor layer 8 in the form of a wiring circuit formed on one main surface of the metal support 7, and a semiconductor is applied thereon. I
The C chip 9 was mounted face up and fixed, and the external connection terminal made of aluminum of the semiconductor IC chip 9 and the metal conductor layer 8 were electrically connected by a metal fine wire 11 such as a gold wire by a wire bonding method.

Then, as shown in FIG.
The mounting surface of the chip 9 is molded with a thermosetting resin such as an epoxy resin or a thermoplastic insulating resin such as polyphenylene sulfide resin (PPS resin) by a transfer molding method, an injection molding method, or the like, and an arbitrary film thickness is formed. An insulating resin molding 12 having the above was prepared, and the back surface of the metal support 7 was chemically dissolved by an etching method to expose the wiring circuit-shaped metal conductor layer 8 to the insulating resin molding 12.

In this case, since both the metal support 7 and the wiring circuit-shaped metal conductor layer 8 are made of the same kind of metal made of metallic copper, overetching does not occur during the chemical etching process. Requires special consideration.

In the present embodiment, as the etching conditions, a ferric chloride solution is used as the etching solution, the solution temperature is kept at 40 ° C., and the solution is uniformly sprayed onto the metal support 7 by a spray method to perform etching. Processed.

Next, as shown in FIG. 4, an insulating resist layer 13 made of an ultraviolet curable resin such as an acrylic resin is formed on the metal conductor layer 8 having a wiring circuit pattern transferred to the insulating resin molded body 12 by a screen printing method or the like. By selectively applying it to expose the metal conductor layer 8 to be an external connection terminal, and if necessary, applying a thick cream-like solder to this metal conductor layer 8 using a metal mask and reheating by heating. The protruding external connection terminals 14 were formed.

The semiconductor package obtained by this manufacturing method is formed by the direct electroplating method in which the metal conductor layer 8 in the form of a wiring circuit connected to the semiconductor IC chip 9 forms a resist pattern on the metal support 7. Therefore, since there is no restriction on the pattern shape and fine wiring can be realized, a drastic downsizing of the semiconductor package is realized.

In the above description, the case where one IC chip is packaged is described. The present invention is also applicable to a so-called multi-chip structure semiconductor package using a plurality of IC chips.

[0029]

As described above, according to the present invention, the external connection terminal formed on the insulating resin molded body can be formed at any position by selectively designing the exposed portion of the metal conductor layer in the form of a wiring circuit. It is a semiconductor package that can be set to.

Therefore, as compared with the conventional example, the effect of making the package smaller and thinner can be obtained. On the other hand, in the manufacturing method, since the wiring circuit-shaped metal conductor layer for connecting to the semiconductor IC chip is directly formed on the metal support by the electroplating method, the pattern shape is not restricted as compared with the conventional example. In addition, since the fine wiring can be achieved, the effect that the package can be significantly downsized can be obtained.

[Brief description of drawings]

FIG. 1 is a sectional view of a manufacturing process of a semiconductor package according to the present invention.

FIG. 2 is a sectional view of a manufacturing process of a semiconductor package according to the present invention.

FIG. 3 is a sectional view of a manufacturing process of a semiconductor package according to the present invention.

FIG. 4 is a sectional view of a semiconductor package manufacturing process according to the present invention.

FIG. 5 is a sectional view of a conventional semiconductor package.

[Explanation of symbols]

 7 Metal Support 8 Metal Conductor Layer 9 Semiconductor IC Chip 10 Adhesive Layer 11 Thin Metal Wire 12 Insulating Resin Molded Body 13 Insulating Resist Layer 14 External Connection Terminal

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Office reference number FI technical display location H01L 23/14 M

Claims (3)

[Claims] 1. An insulating resin molded body is formed by molding at least one semiconductor IC chip and a metal conductor layer connected to the semiconductor IC chip by wire bonding, and at least a part is exposed on one surface of the insulating resin molded body. A semiconductor package in which an external connection terminal is provided on the metal conductor layer. 2. The semiconductor package according to claim 1, wherein the external connection terminal is formed of a protruding metal conductor. 3. A desired metal wiring layer in the form of a wiring circuit is built up on one main surface of a metal support, and at least one semiconductor IC chip is faced up at a predetermined position of the metal wiring layer. After mounting and fixing, and electrically connecting the external connection terminal of the semiconductor IC chip and the metal conductor layer by a wire bond method, the mounting surface of the semiconductor IC chip is molded with an insulating resin to have an arbitrary film thickness. A molded body having the same is prepared, and thereafter, the metal support is chemically dissolved and removed to expose the wiring circuit-shaped metal conductor layer to the insulating resin molded body, and the external connection terminal is provided at the position where the metal conductor layer is exposed. A method for manufacturing a semiconductor package, which is provided.