JPH09293742A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

(57) Abstract: The airtight sealing of a semiconductor element is broken, and the heat generated by the semiconductor element is not well conducted and dissipated to the outside, which causes thermal destruction and thermal change in characteristics of the semiconductor element. Kind Code: A1 A metal base 1 having a semiconductor element mounting portion 1a on which a semiconductor element 3 is mounted, and a semiconductor element 3 mounted on the semiconductor element mounting portion 1a of the metal base 1.
An insulating frame body 2 joined to the outer periphery of the upper surface of the metal base 1 so as to surround the semiconductor element mounting portion 1a and the outer periphery of the lower surface thereof protrudes from the metal base 1; The external lead terminals 4 attached to the outer peripheral portion of the lower surface of the frame body 2 and electrically connected to the electrodes of the semiconductor element 3, the metal substrate 1, the semiconductor element 3, the insulating frame body 2 and the external lead terminals 4. 1. A semiconductor device comprising a mold resin 6 covering a part thereof, wherein an outer peripheral portion of a lower surface protruding from the metal base 1 by the insulating frame 2 is covered with a potting resin 5 having substantially the same thickness as the metal base 1. ing.

Description

Detailed Description of the Invention

[0001]

The present invention relates to a semiconductor device used for an information processing device such as a computer.

[0002]

2. Description of the Related Art Conventionally, a semiconductor device used for an information processing apparatus such as a computer includes a semiconductor element, a die pad on which the semiconductor element is mounted, a large number of external lead terminals extending at predetermined intervals from the periphery of the die pad, and A lead frame comprising the semiconductor element, a die pad, and a mold resin covering a part of the external lead terminal, wherein the die pad and a number of external lead terminals are integrally connected to each other via a frame-shaped connection band. Prepare and fix the semiconductor element on the upper surface of the die pad of the lead frame,
Next, each electrode of the semiconductor element is electrically connected to an external lead terminal via a bonding wire, and a part of the semiconductor element, the die pad and the external lead terminal is covered with a mold resin.

The lead frame is made of a metal containing copper or iron as a main component, and a thin plate of the metal containing copper or iron as a main component is subjected to metal processing such as conventionally known punching or etching. Produced by.

Further, in such a conventional semiconductor device, after a semiconductor element, a die pad and a part of an external lead terminal are covered with a mold resin, the external lead terminal is cut and separated from a frame-shaped connecting band, and each external lead terminal is separated. The external lead terminals are connected to the external electric circuit board by soldering the solder material between one end of each external lead terminal and the wiring conductor of the external electric circuit board, and reflowing the solder. As a result, each electrode of the semiconductor element housed therein is connected to an external electric circuit via an external lead terminal.

However, recently, the density and integration of semiconductor devices have been rapidly increased, and the number of electrodes has been greatly increased. Accordingly, each electrode of the semiconductor device has been connected to an external electric circuit. External lead terminals also have a line width of 0.3m
m or less, and the interval between adjacent external lead terminals has become extremely narrow at 0.3 mm or less. Therefore, in this conventional semiconductor device, for example,
When an external force is applied, for example, when the external lead terminal is connected to an external electric circuit, the external lead terminal is easily deformed by the external force, and the adjacent external lead terminals come into contact with each other to cause a short circuit, or There was a drawback that accurate and strong electrical connection to a predetermined external electric circuit was not possible.

Therefore, in order to eliminate the above-mentioned drawback, FIG.
As shown in FIG. 2, a metal base 11 made of a metal such as copper or a copper-tungsten alloy and having a semiconductor element mounting portion 11a in which a semiconductor element is mounted at the center of its upper surface, and an electrically insulating material such as an aluminum oxide sintered body. And a semiconductor element mounting portion 11a surrounding the upper surface of the metal base 11, and a lower surface outer periphery of the metal base 11 protruding from the metal base 11, and an inner peripheral surface of the upper surface to an outer peripheral surface of the upper surface. Is fixed to the semiconductor element mounting portion 11a of the metal base 11 and the insulating frame body 12 having a plurality of metallized wiring layers 13 extending in a fan-like shape toward the outer periphery of the metal base 11 and its electrodes. Is a bonding wire 1 on the metallized wiring layer 13 of the insulating frame 12.
The semiconductor element 15 electrically connected via 4 and the metallized wiring layer 13 are joined to the portion led out to the outer peripheral portion of the lower surface of the insulating frame 12 to connect the semiconductor element 15 to an external electric circuit. A semiconductor device including a lead terminal 16 and a mold resin 17 that covers a part of the metal base 11, the insulating frame 12, the semiconductor element 15, and the external lead terminal 16 has been proposed.

In such a semiconductor device, as shown in FIGS. 5 and 6, a metallized wiring layer 13 is formed by joining an insulating frame body 12 to the outer peripheral portion of the upper surface of a metal base 11 and leading to the outer peripheral portion of the lower surface of the insulating frame body 12. The external lead terminal 16 is joined to the semiconductor element mounting portion 11a of the metal base 11, and the semiconductor element 15 is mounted and fixed on the semiconductor element mounting portion 11a.
An assembly formed by electrically connecting each electrode of No. 5 and the metallized wiring layer 13 of the insulating frame 12 via the bonding wire 14 has a shape corresponding to the surface shape of the upper half of the molding resin 17 on the lower surface. Upper mold 3 having recess 31a
1 and a lower die 32 having a concave portion 32a having a shape corresponding to the surface shape of the lower half of the molding resin 17 on the upper surface, and set in a molding die 30 composed of a pair of upper and lower dies. The liquid resin 17 'is injected into the concave portions 31a and 32a of the mold 30 and the injected liquid resin 17'
The metal base 11 and the insulating frame 1 are thermally cured.
2. Part of the semiconductor element 15 and the external lead terminal 16 is covered with the mold resin 17.

Incidentally, the recess 31a of the molding die 30,
In order to inject the liquid resin 17 ′ into the mold 32 a, a resin injection path 33 is provided between the upper mold 31 and the lower mold 32 of the molding mold 30 to lead to a corner of the recess from the outside, and the upper mold 31 The resin injection path 33 is provided between the mold 31 and the lower mold 32.
The air discharge passage 34 is provided to the outside from one corner opposite to the one inside the recesses 31a and 32a from which the resin is injected, and the recess 31 of the molding die 30 is provided via the resin injection path 33.
A method is adopted in which the liquid resin 17 'is injected into the a and 32a and at the same time the air in the recesses 31a and 32a is pushed out by the injected liquid resin 17' and the air is discharged to the outside through the air discharge passage 34. .

According to such a semiconductor device, the external lead terminal 16 is joined to a portion of the metallized wiring layer 13 spreading in a fan shape, which is led out to the outer peripheral portion of the lower surface of the insulating frame 11, so that the line width of the external lead terminal 16 is increased. In addition, it is possible to maintain the electrical insulation between the adjacent external lead terminals 16 while effectively preventing the deformation of the external lead terminals 16 by making the adjacent interval wide.

[0010]

However, in this semiconductor device, the metallized wiring layer 13 is joined to the outer peripheral portion of the upper surface of the metal base 11 and led out to the outer peripheral portion of the lower surface of the insulating frame body 12. An external lead terminal 16 is bonded to the semiconductor element mounting portion 11a of the metal substrate 11, and the semiconductor element 15 is mounted and fixed on the semiconductor element mounting portion 11a. The assembly formed by being electrically connected via 14 has a shape in which the metal base 11 projects downward from the lower surface central portion of the insulating frame body 12. Therefore, the assembly is formed in the molding die 30. When set to, the lower surface of the metal base 11 and the recess 32 of the lower mold 32
Since the distance from the bottom surface of a is smaller than the distance between the lower surface of the insulating frame 12 and the bottom surface of the recess 32a of the lower mold 32 by the thickness of the metal base 11, the liquid resin 17 'is placed in the mold 30. When injected, the lower surface of the metal base 11 and the lower mold 32
The resistance of the flow of the liquid resin 17 ′ between the bottom surface of the recess 32 a of the lower mold 32 and the bottom surface of the recess 32 a of the lower frame 32 of the insulating frame 12.
It becomes larger than the flow resistance of the liquid resin 17 ′ between the bottom surface and the bottom surface, and as a result, the liquid resin injected into the molding die 30 flows around the metal substrate 11 and flows to the lower surface of the metal substrate 11 and the lower die. A part of the air existing between the bottom surface of the concave portion 32a of 32 and the bottom surface of the concave portion 32a is trapped in the liquid resin 17 ', and a void is formed in the mold resin 17, whereby the hermetic sealing of the semiconductor element 15 is broken and the semiconductor Element 1
5 cannot be operated normally and stably over a long period of time, or the voids in the mold resin 17 hinder the conduction and dissipation of heat to the outside, and the semiconductor element 15 is exposed to the heat generated by the semiconductor element 15 itself. The high temperature causes a defect that the semiconductor element 15 is thermally broken or the characteristics thereof are thermally changed.

[0011]

According to the present invention, there is provided a semiconductor device comprising:
A metal base having a semiconductor element mounting portion on which a semiconductor element is mounted in the central portion of the upper surface, a semiconductor element mounted on the semiconductor element mounting portion of the metal base, and the semiconductor element mounting portion on the upper peripheral portion of the metal base. It is attached to the insulating frame body which is joined so as to surround the lower surface outer periphery of the metal base and is electrically attached to the electrode of the semiconductor element. What is claimed is: 1. A semiconductor device comprising a connected external lead terminal, a metal base, a semiconductor element, an insulating frame, and a molding resin covering a part of the external lead terminal, the lower surface protruding from the metal base by the insulating frame. The outer peripheral portion is covered with a potting resin having substantially the same thickness as the metal base, wherein the lower peripheral portion protruding from the metal base in the insulating frame is a metal. Since it is covered with potting resin of substantially the same thickness as the body, part of the metal substrate, semiconductor element, insulating frame and external lead terminals is set in the mold and covered with mold resin. At this time, the liquid resin does not go around the metal substrate to form voids in the mold resin.

In the method for manufacturing a semiconductor device of the present invention, a metal base having a semiconductor element mounting portion on which a semiconductor element is mounted is formed in a central portion of an upper surface, and a semiconductor element mounted on the semiconductor element mounting portion of the metal base. An insulating frame joined to the outer peripheral surface of the upper surface of the metal base so as to surround the semiconductor element mounting portion and an outer peripheral surface of the lower surface protruding from the metal base, and an outer peripheral surface of the lower surface of the insulating frame. And a step of preparing an assembly consisting of external lead terminals electrically connected to the electrodes of the semiconductor element, and an outer peripheral portion of the lower surface of the assembly that is an insulating frame and protrudes from the metal base. A step of coating with a potting resin layer having substantially the same thickness as the metal substrate, and setting an assembly in which the outer peripheral portion of the lower surface of the insulating frame body is coated with potting resin in a molding die. A step of injecting a liquid resin into a molding die and curing the injected liquid resin to cover a part of the metal substrate, the insulating frame, the semiconductor element and the external lead terminals with the molding resin. In the assembly set in the molding die, the outer peripheral surface of the lower surface protruding from the metal base in the insulating frame is pre-coated with a potting resin layer having substantially the same thickness as the metal base. Therefore, when the assembly is set in the molding die, the gap between the lower surface of the metal substrate and the bottom surface of the concave portion of the lower die, the lower surface of the potting oil coated on the lower surface of the insulating frame, and the concave portion of the lower die. Since the distance to the bottom surface is substantially the same, when the liquid resin is injected into the molding die, the flow of the liquid resin becomes substantially the same between the metal base lower surface portion and the insulating frame lower surface portion, Results not flow injected liquid resin into the mold is crowded around the metal substrate, thus there is no possibility that voids due to entrainment of air is formed in the mold resin.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a semiconductor device of the present invention, 1 is a metal substrate, 2 is an insulating frame, 3 is a semiconductor element, 4 is an external lead terminal, 5 is potting resin, and 6
Is a mold resin.

The metal substrate 1 is a rectangular flat plate made of a metal having good thermal conductivity such as copper or copper-tungsten alloy, and serves as a supporting substrate for supporting the semiconductor element 3 and the semiconductor element 3 It has a semiconductor element mounting portion 1a which acts as a heat conduction plate for absorbing and conducting heat generated during operation, and has a semiconductor element mounting portion 1a on the center of the upper surface thereof, and the semiconductor element mounting portion 1a has a semiconductor. Element 3
However, they are bonded and fixed via an adhesive such as glass, resin, or brazing material.

Further, an aluminum oxide sintered body, an aluminum nitride sintered body,
A rectangular frame-shaped insulating frame 2 made of ceramics such as mullite sintered body, silicon carbide sintered body, and glass ceramics sintered body, or an electrically insulating material such as glass-epoxy resin is a brazing material or resin such as silver solder. Are joined via an adhesive such as.

The insulating frame body 2 surrounds the semiconductor element mounting portion 1a of the metal base body 1 and the outer peripheral portion of the lower surface thereof protrudes from the metal base body 1.
A plurality of metallized wiring layers 7 that are joined to the outer peripheral portion of the upper surface and extend in a fan shape from the inner peripheral portion of the upper surface to the outer peripheral portion of the upper surface and are led out to the outer peripheral portion of the lower surface through the side surfaces thereof. Each of the electrodes of the semiconductor element 3 is electrically connected to the inner end of the metallized wiring layer 7 through a bonding wire 8. The metallized wiring layer 7 leads to the outer peripheral portion of the lower surface of the insulating frame 2. An external lead terminal 4 electrically connected to an external electric circuit is provided at the outer end portion.
Is attached.

The external lead terminals 4 attached to the metallized wiring layer 7 serve to connect the semiconductor element 3 to an external electric circuit, and connect the external lead terminals 4 to the wiring conductor of the external electric circuit board. Thus, the semiconductor element 3 is electrically connected to the external electric circuit via the metallized wiring layer 7 and the external lead terminal 4.

In the external lead terminal 4, the metallized wiring layer 7 to which the external lead terminal 4 is attached spreads like a fan from the inner peripheral surface of the upper surface around the semiconductor element mounting portion 1a to the outer peripheral surface of the semiconductor element mounting portion 1a. Since the line width and the space between the adjacent metallized wiring layers 7 in the outer peripheral portion of the insulating frame 2 are wide, the line width and the adjacent space are set to the outer peripheral portion of the lower surface via the side surface. The external lead terminals 4 can be made wide, and as a result, even if an external force is applied to the external lead terminals 4, the external lead terminals 4 are not significantly deformed, and the electrical insulation between adjacent external lead terminals 4 is prevented. The external lead terminal 4 can be accurately and surely electrically connected to a predetermined external electric circuit while maintaining the same.

The outer peripheral portion of the lower surface protruding from the metal base 1 in the insulating frame 2 is covered with a potting resin 5 made of a resin such as epoxy resin.

The potting resin 5 has substantially the same thickness as the metal base 1, and the metal base 1, the semiconductor element 3, the insulating frame 2 and a part of the external lead terminals 3 are set in a molding die. When these are covered with the molding resin 6, the gap between the lower surface of the metal substrate 1 and the molding die and the outer peripheral portion of the lower surface protruding from the metal substrate 1 in the insulating frame 2 and the molding die are substantially the same. , Has an effect of effectively preventing the liquid resin, which becomes the mold resin 6 injected into the mold, from flowing around the metal substrate 1, and according to the semiconductor device of the present invention, the potting resin 5 is used.
As a result, the liquid resin is effectively prevented from flowing around the metal substrate 1, so that no void is formed inside the mold resin 6, and therefore the semiconductor element 3 operates normally and stably for a long period of time. In addition, it is possible to prevent the semiconductor element 3 from being thermally destroyed or thermally changed in characteristics.

Further, a part of the metal base 1, the insulating frame 2, the semiconductor element 3 and the external lead terminals 4 is covered with a mold resin 6 such as epoxy resin, whereby the semiconductor element 3 is hermetically sealed. It is stopped and protected from the external environment.

Next, a method of manufacturing the semiconductor device will be described.

First, the metal base 1, the insulating frame 2, the semiconductor element 3, and the external lead terminals 4 are prepared.

The metal base 1 is made of a metal having a high thermal conductivity such as copper or a copper-tungsten alloy. By subjecting an ingot made of a metal having a high thermal conductivity such as copper to various conventionally known metal workings. , Formed in a predetermined plate shape.

When the insulating frame 2 is made of, for example, an aluminum oxide sintered body, a powdery raw material such as aluminum oxide, silicon oxide, calcium oxide, magnesium oxide, etc. is mixed with an appropriate binder and solvent, and mixed in a slurry form. A ceramic green sheet is obtained by forming the ceramic slurry into a sheet shape by adopting a sheet forming technique such as a doctor blade method or a calendar roll method, which is well known in the art, and then cutting the ceramic green sheet. A frame shape is formed by processing or punching, and a refractory metal paste such as tungsten or molybdenum to be the metallized wiring layer 7 is printed and applied to a predetermined pattern by using a thick film method such as a conventionally known screen printing method. Finally, if necessary, attach the ceramic green sheet. In a reducing atmosphere with a plurality of stacked Te it is fabricated by sintering at a temperature of about 1600 ° C..

The refractory metal paste to be the metallized wiring layer 7 is manufactured by adding and mixing a refractory metal powder such as tungsten with an appropriate binder and solvent.

The metallized wiring layer 7 is formed by plating the exposed surface with a metal such as nickel, gold, etc., which has excellent corrosion resistance, and has excellent wire bonding property and wettability with the brazing material. When the metallized wiring layer 7 is plated to a thickness of 0.0 μm, it is possible to effectively prevent the metallized wiring layer 7 from being oxidized and corroded, the connection between the metallized wiring layer 7 and the bonding wire 8, and the metallized wiring layer 7 and the external lead terminal. It becomes easy to attach to 4 and becomes strong. Therefore, the metallized wiring layer 7 has a metal of 1.0 to 20.0 μm on its exposed surface, which is excellent in corrosion resistance such as nickel and gold, and also excellent in wire bonding property and wettability with the brazing material by the plating method. It is preferable to plate the plate to the thickness.

The external lead terminal 4 is made of a metal such as a copper-based alloy containing copper as a main component or an iron-based alloy containing iron as a main component, and is suitable for a thin plate of a copper-based alloy containing copper as a main component. It is manufactured by forming into a predetermined shape by performing punching or etching.

Next, the external lead terminals 4 are attached to the metallized wiring layer 7 led out to the outer peripheral portion of the lower surface of the insulating frame 2, and the insulating frame body 2 is bonded to the outer peripheral portion of the upper surface of the metal substrate 1.

In order to attach the external lead terminal 4 to the metallized wiring layer 7 led to the outer peripheral portion of the lower surface of the insulating frame 2,
Metallized wiring layer 7 led to the outer peripheral portion of the lower surface of the insulating frame 2.
And one end of the external lead terminal 4 are contacted with each other via a brazing material such as a gold-tin-lead-silver alloy or a gold-tin-lead-palladium alloy, and at least the temperature at which the brazing material melts. A method is employed in which the brazing material is heated to a temperature of 1 to melt the brazing material, and the brazing material is cooled to a temperature below the temperature at which the molten brazing material solidifies.

In order to join the insulating frame body 2 to which the external lead terminals 4 are attached to the outer peripheral portion of the upper surface of the metal base body 1, the metal base body 1 and the insulating frame body 2 are bonded with an adhesive such as an epoxy resin. A method of adhering through is adopted.

Next, the semiconductor element 3 is adhered and fixed to the semiconductor element mounting portion 1a at the center of the upper surface of the metal substrate 1 with an adhesive such as epoxy resin, and each electrode of the semiconductor element 3 is insulated by the insulating frame 2. Is electrically connected to the inner end of the metallized wiring layer 7 via the bonding wire 8.

In this manner, the semiconductor element 3 is mounted on the semiconductor element mounting portion 1a of the metal base 1, the insulating frame 2 is joined to the outer periphery of the upper surface of the metal base 1, and the insulating base 2 is attached to the insulating base 2. The electrode of the semiconductor element 3 is electrically connected to the inner peripheral portion of the insulating frame body 2 by the adhered metallized wiring layer 7 through the bonding wire 8 and the lower surface outer periphery of the insulating frame body 2 is formed by the metallized wiring layer 7. An assembly is obtained in which the external lead terminals 4 are attached to the parts led out to the parts.

Then, the insulating base body 2 of the assembly is used to form the metal substrate 1.
The outer peripheral portion of the lower surface that protrudes is covered with the potting resin 5 to a thickness substantially the same as that of the metal base 1.

The potting resin 5 is formed by applying a liquid resin, which is an epoxy resin, to the outer peripheral portion of the lower surface of the insulating frame 2 protruding from the metal substrate 1 by a dispenser or the like.
It is formed by applying the liquid resin so as to have substantially the same thickness as above and thermally curing the applied liquid resin at a temperature of about 150 ° C.

Finally, as shown in FIGS. 2 and 3, the assembly in which the outer peripheral surface of the lower surface of the insulating frame 2 is covered with the potting resin 5 is set in the mold die 20 and the inside of the mold die is set. After the liquid resin 6 ′ such as an epoxy resin is injected into the resin 20, the injected liquid resin 6 ′ is thermally cured, so that the metal substrate 1, the insulating frame 2, the semiconductor element 3 and a part of the external lead terminal 4 are removed. The semiconductor device is completed by being covered with the mold resin 6.

In this case, in the assembly set in the mold 20, the potting resin 5 whose outer peripheral portion of the lower surface of the insulating frame 2 has substantially the same thickness as the metal base 1 is formed.
Since it is covered with, the gap between the lower surface of the metal substrate 1 and the lower mold is substantially the same as the gap between the insulating frame 2 and the lower mold, and the mold resin 6 is placed in the mold 20.
The flow of the liquid resin 6 ′ in the lower mold becomes substantially even when the liquid resin 6 ′ that becomes the liquid resin 6 ′ is injected, and as a result, the liquid resin 6 ′ flows around the metal substrate 1 and flows into the mold resin 6. It is possible to provide a semiconductor device that does not generate voids and has excellent airtightness and heat dissipation.

The lower surface of the molding die 20 is a recess 2 having a shape corresponding to the surface shape of the upper half of the molding resin 6.
1a, and a lower mold 22 having a concave portion 22a having a shape corresponding to the surface shape of the lower half of the molding resin 6 on the upper surface, and between the upper mold 21 and the lower mold 22. The assembly is set inside by sandwiching the external lead terminal 4 of the assembly into the recess 2 of the molding die 20 from the outside between the upper die 21 and the lower die 22.
Liquid resin 6 ′ is injected into the interior via a resin injection passage 23 leading to one corner of 1 a, 22 a, and the inside of an air discharge passage 24 is led to the outside from a corner portion of the recess 21 a facing the resin injection passage 23. Liquid resin 6 ′ is injected and filled into the inside by discharging air to the outside, and by heating and curing it, a part of the metal substrate 1, the insulating frame 2, the semiconductor element 3, and the external lead terminal 4 is molded resin 6. Is covered by.

Thus, according to the semiconductor device manufactured by the manufacturing method of the present invention, one end of the external lead terminal 4 is placed with the solder material sandwiched between the wiring conductors of the external electric circuit board and the solder reflow is performed. By doing so, the external lead terminals 4 are connected to the external electric circuit board, and thereby the electrodes of the semiconductor element 3 housed inside are connected to the external electric circuit via the external lead terminals 4.

Needless to say, the present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the gist of the present invention.

[0041]

According to the semiconductor device of the present invention, since the outer peripheral portion of the lower surface protruding from the metal base in the insulating frame is covered with the potting resin having substantially the same thickness as the metal base, the metal base, When the semiconductor element, the insulating frame, and a part of the external lead terminal are set in the molding die and covered with the molding resin, the liquid resin wraps around the metal substrate to form voids in the molding resin. Without
Therefore, the semiconductor element can be operated normally and stably for a long period of time, and the semiconductor element will not be thermally destroyed or the characteristics will be thermally changed.

According to the method of manufacturing a semiconductor device of the present invention, the assembly set in the molding die has a potting in which the outer peripheral portion of the lower surface protruding from the metal base by the insulating frame has substantially the same thickness as the metal base. Since it is pre-coated with resin, when the assembly is set in the mold,
Since the distance between the lower surface of the metal base and the bottom surface of the recess of the lower mold and the distance between the lower surface of the potting resin coated on the lower surface of the insulating frame and the bottom surface of the recess of the lower mold are substantially the same, When the liquid resin is injected, the flow of the liquid resin becomes substantially the same on the lower surface part of the metal base and the lower surface part of the insulating frame, and as a result, the liquid resin injected into the molding die flows around the metal base. As a result, voids due to air entrainment are not formed in the molding resin, and a semiconductor device having excellent airtightness and heat dissipation can be provided.

[Brief description of drawings]

FIG. 1 is a cross-sectional view illustrating one embodiment of a semiconductor device of the present invention.

FIG. 2 is a cross-sectional view for explaining the method for manufacturing a semiconductor device of the present invention.

FIG. 3 is a cross-sectional view for explaining the method for manufacturing a semiconductor device of the present invention.

FIG. 4 is a sectional view showing a conventional semiconductor device.

FIG. 5 is a cross-sectional view for explaining a conventional method for manufacturing a semiconductor device.

FIG. 6 is a cross-sectional view for explaining the conventional method for manufacturing a semiconductor device.

[Explanation of symbols]

 1 --- Metal substrate 1a-Semiconductor element mounting part 2--Insulation frame 3--Semiconductor element 4--External lead terminal 5-・ ・ ・ ・ ・ Potting resin 6 …… Molding resin

Claims (2)

[Claims] 1. A metal base having a semiconductor element mounting portion on which a semiconductor element is mounted in a central portion of an upper surface, a semiconductor element mounted on the semiconductor element mounting portion of the metal base, and an outer peripheral portion of an upper surface of the metal base. The semiconductor element mounting portion is attached to the insulating frame body, which is joined to the semiconductor element mounting portion so as to surround the lower surface outer peripheral portion of the semiconductor substrate, and the insulating frame body is attached to the lower surface outer peripheral portion of the insulating frame body. What is claimed is: 1. A semiconductor device comprising an external lead terminal electrically connected to an electrode, a metal base, a semiconductor element, an insulating frame, and a mold resin covering a part of the external lead terminal, wherein the insulating frame is a metal. A semiconductor device characterized in that the outer peripheral portion of the lower surface protruding from the base is covered with a potting resin having substantially the same thickness as the metal base. 2. A metal base having a semiconductor element mounting portion on which a semiconductor element is mounted in a central portion of an upper surface, a semiconductor element mounted on the semiconductor element mounting portion of the metal base, and an outer peripheral portion of an upper surface of the metal base. An insulating frame body that is joined so as to surround the semiconductor element mounting portion and has its lower surface outer peripheral portion protruding from the metal base body, and an electrode of the semiconductor element that is joined to the lower surface outer peripheral portion of the insulating frame body. A step of preparing an assembly consisting of an external lead terminal electrically connected to the metal base, and an outer peripheral portion of the lower surface of the insulating frame protruding from the metal base having substantially the same thickness as the metal base. A step of covering with a potting resin layer, and an assembly in which the lower surface outer peripheral portion of the insulating frame is covered with a potting resin is set in a molding die and a liquid resin is injected into the molding die, Serial the metal substrate by curing the injected liquid resin, insulating frame body, a method of manufacturing a semiconductor device characterized by comprising a part of the semiconductor element and the external lead terminals from the steps of coating a mold resin.