JPH09302468A - Thin film forming equipment - Google Patents

Abstract

(57) Abstract: When forming a thin film on a winding film substrate, the present invention has a very strong adhesion to the film substrate and is capable of forming a uniform thin film of good quality. An object of the present invention is to provide a thin film forming apparatus that can be used. In a vacuum chamber, a resistance heating type evaporation source, a thermoelectron generating filament, and a mesh grid 22 for passing evaporation substances are provided from the bottom to the top.
Are arranged in order. A pair of guides 38 having a predetermined concave shape are installed above the grid 22 as a film substrate traveling means, and both ends of the film substrate 32 traveling on the pair of guides 38 are slid. Therefore, the portion of the film substrate 32 held by the guide 38 has a predetermined concave surface shape with respect to the evaporation source 18, and the concave surface formed by the film substrate 32 has the same number of particles of the evaporation substance from the evaporation source 18. It is a concave surface.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming apparatus, and more particularly to a film winding type thin film forming apparatus for forming a thin film on a winding film substrate.

[0002]

2. Description of the Related Art Conventionally, a method for forming a thin film on a roll-up film substrate has been developed mainly by a sputtering method. However, in the conventional film winding type thin film forming apparatus, it is difficult to form a uniform thin film, the adhesion of the formed thin film to the thin film forming substrate is weak, and high quality thin film coating can be produced. There was a problem that it was difficult to obtain well. Therefore, there has been a demand for a film winding type thin film forming apparatus for solving these problems.

By the way, CV is generally used for the thin film forming method.
D (Chemical Vapor Deposition) method and PVD (Physic
al Vapor Deposition) method. The CVD method includes
The PVD method has the advantage of having strong reactivity.
Since the film is formed in a high vacuum, there is an advantage that a dense and strong film can be formed. Therefore, the advantage of the CVD method is that a substrate having no heat resistance such as plastics can be used as a vapor deposition substrate and a thin film having extremely strong adhesion to the vapor deposition substrate can be formed. And PV
It is necessary to develop a new type thin film forming apparatus that has the advantages of the D method. The following thin film deposition apparatus has been proposed as a solution to these needs (Japanese Patent Publication No.
53351).

That is, this thin film deposition apparatus is provided with a counter electrode for holding a substrate for forming a thin film facing an evaporation source for evaporating an evaporation substance, and the evaporation substance is interposed between the counter electrode and the evaporation source. A grid that allows passage is provided, a filament for generating thermoelectrons is provided between the grid and the evaporation source, the grid is set to a positive potential with respect to the counter electrode and the evaporation source, and the evaporation material evaporated from the evaporation source is a substrate. It is a device that forms a thin film by vapor deposition on top. In this thin film deposition apparatus, the evaporation material evaporated from the evaporation source is first ionized by thermoelectrons emitted from the filament. When this ionized vaporized substance passes through the grid, it is accelerated by the action of the electric field from the grid toward the counter electrode and collides with the substrate to form a thin film with good adhesion.

However, since this thin film vapor deposition apparatus is a single-wafer type or a batch type, it cannot be used as it is as an apparatus for forming a thin film on a winding film substrate. Therefore, a film winding type thin film forming apparatus aiming at the same effect as this thin film vapor deposition apparatus has been proposed (see Japanese Patent Laid-Open No. 4-228570).

[0006]

However, in the above-described conventional film winding type thin film forming apparatus, the film substrate is run on the cooling can having a curved convex surface shape with respect to the evaporation source for evaporating the composition material of the thin film. To let
When a thin film is formed on a film substrate by reactive film formation in an active gas, the ratio of the evaporated substance and the active gas in the reaction space until the evaporated substance reaches the film substrate cannot be made uniform. However, there has been a problem that the film thickness and film characteristics at each position on the curved convex film substrate are not always uniform.

In order to solve this problem, usually, a method is adopted in which a thin film forming region is limited to a range where a desired film thickness and film characteristics can be obtained, and the film is shielded from being formed outside the range. .. However, if it is attempted to maintain the film thickness and film characteristics in a desired range by this method, the exposed area of the film substrate with respect to the evaporation source cannot be increased,
There is a problem that the speeding up of thin film formation is restricted.

Therefore, the present invention has been made in view of the above problems, and when a thin film is formed on a winding film substrate, it has extremely strong adhesion to the film substrate and is of good quality and uniform. An object is to provide a thin film forming apparatus capable of forming a thin film.

[0009]

The above object can be achieved by the following thin film forming apparatus according to the present invention. That is, the thin film forming apparatus according to claim 1 is a vacuum tank into which an active gas, an inert gas, or a mixed gas of an active gas and an inert gas is introduced, and is installed in the vacuum tank, and a predetermined evaporation material An evaporation source for evaporating, a film substrate traveling means for traveling the film substrate in the vacuum chamber, and a traveling film substrate surface in the vacuum chamber so as to face the evaporation source in a predetermined concave shape, A film substrate holding means in which at least a part of the concave surface has a surface having an equal amount of particles of the evaporation material evaporated from the evaporation source, and the film substrate and the evaporation source facing the evaporation source in a predetermined concave shape. A filament that is placed in between and generates thermoelectrons,
A grid disposed between the film substrate and the filament facing the evaporation source in a predetermined concave shape, through which a predetermined evaporation substance evaporated from the evaporation source can pass, and a predetermined voltage applied to the evaporation source, the filament, and the grid. In a state in which the grid has a positive potential with respect to the filament, the evaporation material evaporated from the evaporation source collides with thermoelectrons emitted from the filament and is ionized, It passes through and collides with and adheres to the surface of the film substrate facing the evaporation source in a concave shape.

As described above, in the thin film forming apparatus according to the first aspect, the evaporation material evaporated from the evaporation source is ionized by the thermoelectrons emitted from the filament and has a high energy electrically, so that the reactive thin film is formed. In forming a thin film by formation or crystallization, it is not necessary to apply heat energy such as a reaction temperature or a crystallization temperature, and thus a low temperature thin film can be formed. In addition, since the active gas in the vacuum chamber is ionized by thermionic electrons from the filament, the evaporated substance can be ionized even under high vacuum, so the structure of the thin film formed on the surface of the film substrate is extremely precise. It is also possible to obtain a density very close to that of the bulk. Further, by forming the thin film under a high vacuum, it is possible to extremely reduce the gas molecules taken into the thin film, so that a high-purity thin film can be obtained. In addition, since the concave surface of the film substrate surface of the portion held by the film substrate holding means includes at least a part of the surface having the same amount of particles of the evaporated substance evaporated from the evaporation source, the usual roll-up type film formation is possible. Compared to running a film substrate on such a curved convex surface or flat surface, it is possible to make the ratio of vaporized substance and active gas in the reaction space until it reaches the film substrate uniform, so it is formed on the film substrate. The film thickness and film characteristics of the thin film can be made uniform. Moreover, since the exposed area of the film substrate capable of maintaining the film thickness and the film characteristics of the thin film in a desired range can be widened, the speed of thin film formation can be significantly increased.

The thin film forming apparatus according to a second aspect is the thin film forming apparatus according to the first aspect, wherein a counter electrode is provided above the film substrate facing the evaporation source in a predetermined concave shape. This counter electrode has a negative potential with respect to the grid.

As described above, in the thin-film forming apparatus according to the second aspect, the counter electrode having a negative potential with respect to the grid covers the concave portion of the film substrate from above, so that the counter electrode from the grid side. Since an electric field directed to the side is generated, the ionized vaporized substance that has passed through the grid is accelerated toward the film substrate side by the action of this electric field, and collides with the film substrate with high energy and adheres thereto. Further, even if some of the thermoelectrons emitted from the filament pass through the grid, they are decelerated by the action of this electric field and do not heat the film substrate. Therefore, a thin film having better adhesion can be formed at a higher speed than in the case of the thin film forming apparatus according to the first aspect.

A thin film forming apparatus according to a third aspect is the thin film forming apparatus according to the first aspect, wherein the film substrate holding means is arranged above the grid and has a predetermined concave surface shape with respect to the evaporation source. Both ends of the film substrate are held on a pair of guides, the film substrate runs while sliding on the pair of guides, and the surface of the film substrate held on the pair of guides evaporates. It faces the source in a predetermined concave shape.

As described above, in the thin film forming apparatus according to the third aspect of the present invention, the concave surface of the surface of the film substrate in which the pair of guides are held has at least a surface having the same amount of particles of the evaporated substance evaporated from the evaporation source. By including in part,
Compared to the case where a film substrate is run on a curved convex surface or a flat surface such as a normal roll-up type film formation, it is possible to make the ratio of vaporized substance and active gas in the reaction space to reach the film substrate uniform. Therefore, the film thickness and film characteristics of the thin film formed on the film substrate can be made uniform.

A thin film forming apparatus according to a fourth aspect is the thin film forming apparatus according to the third aspect, wherein the pair of guides have a negative potential with respect to the grid.

As described above, in the thin film forming apparatus according to the fourth aspect, since the pair of guides holding the film substrate has a negative potential with respect to the grid, the pair of guides are arranged from the grid side. Since an electric field directed to F is generated, the ionized vaporized substance that has passed through the grid is accelerated toward the film substrate by the action of this electric field and collides with the film substrate with high energy and adheres thereto. Further, even if some of the thermoelectrons emitted from the filament pass through the grid, they are decelerated by the action of this electric field and do not heat the film substrate. Therefore, a thin film having better adhesion can be formed at a higher speed than in the thin film forming apparatus according to the third aspect.

A thin film forming apparatus according to a fifth aspect is the thin film forming apparatus according to the first aspect, wherein the film substrate holding means is a rotatable-paired disc, and both ends of the film substrate are a pair of discs. Holds on, the film substrate travels with the rotation of the pair of discs, the film substrate surface of the portion held on the pair of discs is opposed to the evaporation source in a predetermined concave shape, It is characterized by

As described above, in the thin film forming apparatus according to the fifth aspect, since the film substrate is caused to travel by the rotation of the pair of discs, it is possible to prevent abrasion and static electricity due to friction between the film substrate and the disc. Further, since the traveling speed of the film substrate can be controlled by the rotational speed of the disk, the film substrate can be stably driven at a constant speed. Therefore, it is possible to further improve the uniformity of the film thickness and film characteristics in the running direction of the film substrate, as compared with the case of the thin film forming apparatus according to the first aspect.

A thin film forming apparatus according to a sixth aspect is the thin film forming apparatus according to the first aspect, wherein the film substrate holding means is a pair of belts attached to a plurality of driving rollers, Both ends are held on a pair of belts, the film substrate runs along with the rotation of the pair of belts by the rotation of the plurality of drive rollers, and the film substrate surface of the portion held on the pair of belts serves as an evaporation source. On the other hand, it is opposed to a predetermined concave shape.

As described above, in the thin film forming apparatus according to the sixth aspect, since the film substrate is run by the rotation of the pair of endless belts, it is possible to prevent abrasion and static electricity due to friction between the film substrate and the endless belt. be able to.
Further, since the traveling speed of the film substrate can be controlled by the rotation speed of the driving roller, the film substrate can be stably driven at a constant speed. Further, even if the surface having the same amount of evaporated particles has any shape, the film composition and the film thickness can be made uniform by changing the arrangement of the driving roller and adjusting the belt shape to the shape. Therefore, it is possible to further improve the uniformity of the film thickness and film characteristics in the running direction of the film substrate.

A thin film forming apparatus according to a seventh aspect is the thin film forming apparatus according to the first aspect, wherein the film substrate holding means is a plurality of rollers arranged above the grid, and the film substrate is a plurality of rollers. The film substrate is held on, and the film substrate travels with the rotation of the plurality of rollers, and the film substrate surface of the portion held on the plurality of rollers faces the evaporation source in a predetermined concave shape, It is characterized by

As described above, in the thin film forming apparatus according to the seventh aspect, since the film substrate is run by the rotation of the plurality of rollers, it is possible to prevent abrasion and static electricity due to friction between the film substrate and the plurality of rollers. it can. Further, since the traveling speed of the film substrate can be controlled by the rotational speeds of the plurality of rollers, the film substrate can be stably driven at a constant speed. Further, even if the surface having the same amount of evaporated particles has any shape, the film composition and the film thickness can be made uniform by changing the arrangement of the driving roller and adjusting the belt shape to the shape. Therefore, it is possible to further improve the uniformity of the film thickness and film characteristics in the running direction of the film substrate. Further, since the entire film substrate is held by the plurality of rollers, even if the film substrate is unstable because it is wide, it is possible to stably hold the film substrate.

Further, in the thin film forming apparatus according to the eighth aspect, in the thin film forming apparatus according to the seventh aspect, the evaporation material from the evaporation source adheres to the surface of the plurality of rollers on the evaporation source side of each of the plurality of rollers. It is characterized in that a plurality of deposition preventive plates for preventing the above-mentioned operation are provided.

As described above, in the thin film forming apparatus according to the eighth aspect, the plurality of deposition preventive plates are provided on the respective evaporation source sides of the plurality of rollers, and the evaporation material from the evaporation source adheres to the surfaces of the plurality of rollers. Therefore, it is possible to prevent the vaporized substances attached to the surfaces of the plurality of rollers from moving to the surface of the film substrate and destroying the uniformity of the film thickness of the thin film formed on the surface of the film substrate. .

A thin film forming apparatus according to a ninth aspect is the thin film forming apparatus according to the first aspect, in which the film substrate holding means is displaced above the plurality of rollers arranged above the grid. A plurality of tension setting rollers, the film substrate alternately passes through the plurality of rollers and the plurality of tension setting rollers one by one, and the plurality of tension setting rollers adjust the tension of the film substrate while the plurality of tension setting rollers are used. The film substrate travels with the rotation of the roller, and the surface of the film substrate held on the plurality of rollers faces the evaporation source in a predetermined concave shape.

As described above, in the thin film forming apparatus according to the ninth aspect, the film substrate travels while maintaining a constant tension by the rotation of the plurality of rollers and the plurality of tension setting rollers. It is possible to prevent abrasion and static electricity due to friction with a plurality of tension setting rollers. Further, since the traveling speed of the film substrate can be controlled by the rotational speeds of the plurality of rollers, the film substrate can be stably driven at a constant speed. Further, even if the surface having the same amount of evaporated particles has any shape, the film composition and the film thickness can be made uniform by changing the arrangement of the driving roller and adjusting the belt shape to the shape.
Therefore, it is possible to further improve the uniformity of the film thickness and film characteristics in the running direction of the film substrate. Also, by holding the entire film substrate with multiple rollers,
Since the width of the film substrate is wide, it is possible to stably hold even an unstable film substrate by holding only its end portion.

A thin film forming apparatus according to a tenth aspect of the present invention is
10. The thin film forming apparatus according to claim 9, wherein a plurality of tension setting rollers are provided on the respective evaporation source sides to prevent a substance evaporated from the evaporation source from adhering to the surfaces of the plurality of tension setting rollers. It is characterized in that an anti-adhesion plate is provided.

As described above, in the thin film forming apparatus according to the tenth aspect, the plurality of adhesion-preventing plates are provided on the respective evaporation source sides of the plurality of tension setting rollers, and the evaporation substance from the evaporation source has a plurality of tension settings. Since it is prevented from adhering to the surface of the film roller, the vaporized substances adhering to the surface of the tension setting rollers are transferred to the surface of the film substrate and the uniformity of the film thickness of the thin film formed on the surface of the film substrate is destroyed. Can be prevented.

The thin film forming apparatus according to claim 11 is
In the thin film forming apparatus according to any one of claims 7 to 10, the plurality of rollers are film substrate cooling rollers in which a refrigerant is introduced.

As described above, in the thin film forming apparatus according to the eleventh aspect, since the plurality of rollers holding the film substrate are the film substrate cooling rollers, the film substrate can be cooled. It is possible to deal with the case where the film substrate needs to be cooled during the formation.

A thin film forming apparatus according to a twelfth aspect of the present invention is
The thin film forming apparatus according to any one of claims 1 to 11, wherein a discharge stabilizing shield is provided between the film substrate and the grid, which face the evaporation source in a predetermined concave shape. , Is characterized.

As described above, in the thin film forming apparatus according to the twelfth aspect, since the discharge stabilizing shield is provided on the front surface of the film substrate having a predetermined concave shape,
The shield serves as a discharge electrode, and the discharge can be generated closer to the evaporation source side than the shield and does not depend on the potential of the film. And since the shield potential is always constant,
The discharge conditions can be stabilized. Further, since the discharge is not affected by the potential of the film substrate, the uniformity of the film thickness and the film characteristics can be further improved as compared with the case of the thin film forming apparatus according to the first to eleventh aspects.

A thin film forming apparatus according to a thirteenth aspect of the present invention is
The thin film forming apparatus according to any one of claims 1 to 12, wherein the grid has a predetermined concave shape with respect to the evaporation source, and the extension of the normal to the grid surface is predetermined with respect to the evaporation source. It is characterized in that it overlaps with a normal line of the film substrate surface facing the concave shape.

As described above, in the thin film forming apparatus according to the thirteenth aspect, the grid disposed between the evaporation source and the concave film substrate has a predetermined concave shape with respect to the evaporation source, and the concave surface is formed. Since the extension of the normal line of the grid surface of the shape overlaps the normal line of the concave film substrate surface, the direction of the electric field from the grid to the film substrate above it becomes perpendicular to the film substrate surface, and this electric field accelerates Since the partially ionized vaporized substance that has collided collides vertically with the film substrate surface, the uniformity of the orientation and crystallinity of the thin film is further improved as compared with the case of the thin film forming apparatus according to any one of claims 1 to 12. Therefore, the uniformity of the film characteristics can be improved.

A thin film forming apparatus according to claim 14 is
The thin film forming apparatus according to any one of claims 1 to 13, wherein a collimator is provided on the evaporation source, and the collimator limits the flight range of the evaporation material from the evaporation source in the width direction of the film substrate. It is characterized by

As described above, in the thin film forming apparatus according to the fourteenth aspect, the collimator is arranged on the evaporation source, and the flight range of the evaporation material from the evaporation source in the width direction of the film substrate is limited. Since the distance from the evaporation source to the film substrate is almost constant, and the degree of reaction with the active gas is also constant, it is possible to keep the composition of the thin film formed on the film substrate within the desired range. Therefore, it is possible to further improve the uniformity of the film thickness and the film characteristics as compared with the case of the thin film forming apparatus according to any one of claims 1 to 13, and particularly to speed up the thin film formation and make the film substrate uniform in the width direction. Can be realized at the same time.

A thin film forming apparatus according to a fifteenth aspect is
The thin film forming apparatus according to any one of claims 1 to 14, wherein a pair of deposition-inhibiting walls are provided so as to sandwich the evaporation source, and the pair of deposition-inhibiting walls oppose the evaporation source in a predetermined concave surface shape. It is characterized in that evaporation substances from the evaporation source are prevented from adhering to the surface of the film substrate other than the existing film substrate.

As described above, in the thin film forming apparatus according to the fifteenth aspect, the pair of deposition-inhibiting walls which sandwich the evaporation source sandwich the evaporation material that flies laterally from the evaporation source, and the evaporation source On the other hand, since evaporation substances are prevented from adhering to the surface of the film substrate other than the film substrate facing the predetermined concave shape, the uniformity of the film thickness of the thin film formed on the surface of the film substrate is destroyed. Can be prevented.

[0039]

Embodiments of the present invention will be described below with reference to the accompanying drawings. (First Embodiment) A film winding type thin film forming apparatus according to a first embodiment of the present invention will be described with reference to FIG. Here, FIG. 1A is a schematic sectional view showing the film winding type thin film forming apparatus according to the first embodiment, and FIG. 1B is a side view showing the inside of the vacuum chamber.
In FIG. 1, the base plate 10 and the bell jar 12 are integrated by packing (not shown) to form a vacuum chamber 14. Further, a hole 16 is penetrated through the central portion of the base plate 10 and is connected to a vacuum exhaust system (not shown) to maintain the airtightness inside the vacuum chamber 14.

In the vacuum chamber 14, the evaporation source 18, the filament 20, and the grid 22 are arranged from the bottom to the top.
Are sequentially arranged at appropriate intervals. The evaporation source 18 is composed of a pair of support-supporting electrodes 2 that also function as a support and electrodes.
The filament 20 is held in a horizontal state by the pair of support / electrodes 26a, 26b, and the grid 22 is held in a horizontal state by the support / electrodes 4a and 24b. Further, a pair of deposition-preventing walls 30 are installed opposite to each other with the evaporation source 18 and the like interposed therebetween. Here, evaporation source 1
Reference numeral 8 is for evaporating the evaporation substance, and is configured as a resistance heating type formed by forming a metal such as tungsten or molybdenum in a boat shape.

The filament 20 is made of, for example, tungsten and is for generating thermoelectrons. The shape of the filament 20 is such that a plurality of filaments are arranged in parallel or have a mesh shape so as to cover the spread of particles of the evaporation material evaporated from the evaporation source 18. Further, the grid 22 has a shape such as a mesh shape that allows the evaporated substance evaporated from the evaporation source 18 to pass therethrough. Further, in the vacuum tank 14, an unwinder roll 34 for feeding the film substrate 32 and a winder roll 36 for winding the film substrate 32 are used as a film substrate running means for running the film substrate 32 on which a thin film is to be formed. The evaporation sources 18 and the like are placed on the inner base plate 10 so as to face each other.

A pair of guides 38 having a predetermined concave shape with respect to the evaporation source 18 are installed above the grid 22 as a film substrate traveling means, and the film substrate 32 traveling on the pair of guides 38 is provided. Both ends are made to slide. And the film substrate 3 of the guide 38
Although not shown, a material having a small friction coefficient, such as a fluorine-based resin, is used in a portion in contact with 2, so that the film substrate 32 can be slid more smoothly. The guide 38 is arranged in front of the film substrate 32 when viewed from the evaporation source 18 side. Therefore, the film substrate 32 traveling from the unwinder roll 34 to the winder roll 36 via the pair of guides 38 is
A portion of which both ends are held by a pair of guides 38 having a predetermined concave surface shape has a predetermined concave surface shape with respect to the evaporation source 18.

The predetermined concave shape formed by the film substrate 32 with respect to the evaporation source 18 will be described. For example, when using a point evaporation source and infinitesimal plane evaporation source, the distance R from the evaporation point of the particle amount equal surface evaporation _{materials, R = R O · cos n} / 2 θ where, n: positive integer R _O : Constant θ: It is generally known that it can be approximated by the angle from the vertical upper side of the evaporation point (see Siegfried Schiller and Ulrich Heisich, “Vacuum Deposition”, Agne (1983), p. 36). Therefore, the concave shape of the guide 38 is determined so that the concave shape of the film substrate 32 with respect to the evaporation source 18 satisfies these conditions. The actual concave shape of the guide 38 is calculated based on the above-described calculation formula, or is determined based on the measured value of the film thickness distribution of the thin film formed on the film substrate 32.

Further, the electrodes 24a, 24b and 2 also serving as supports
All of 6a, 26b, and 28 penetrate the base plate 10 in a state of maintaining electrical insulation with the base plate 10 and are drawn out of the vacuum chamber 14. Naturally, airtightness is ensured in the penetrating portions of these base plates 10.

The pair of support / combined electrodes 24a, 24b holding the evaporation source 18 are connected to the AC power supply 40 for evaporation, and the pair of support / combined electrodes 26a, 26b holding the filament 20 are connected to the DC power supply 42. The electrode 28 also serving as a support, which is connected to the positive electrode and the negative electrode of the DC power source 42 and holds the grid 22, is connected to the positive electrode of the DC power supply 44 having a higher voltage than the DC power supply 42. Further, the support / electrode 24 a of the evaporation source 18 is connected to the negative electrode of the DC power supply 42 and the negative electrode of the DC power supply 44, and the support / electrode 2 of the filament 20 is also used.
6a is connected to the negative electrode of the DC power supply 44,
The negative electrode of the DC power supply 44 is also grounded. Therefore, the potential of the grid 22 becomes a positive potential with respect to the potentials of the evaporation source 18 and the filament 20, and the electric field between the grid 22 and the evaporation source 18 is from the grid 22 side to the evaporation source 1
It goes to 8 side.

The negative electrodes of the DC power supply 42 and the DC power supply 44 are not necessarily grounded. In fact, these electrical connections include various switches, and these operations realize the thin film forming process.
In order to avoid making the drawing complicated, these switches are not shown.

Next, the thin film formation by the film winding type thin film forming apparatus shown in FIG. 1 will be described. The combination of the base material and the introduced gas species constituting the vaporized substance is, of course, determined depending on what kind of thin film is to be formed. For example, Al
When forming a metal thin film such as (aluminum) or Au (gold), Al or Au is used as an evaporation material and Ar (argon) is used as an inert gas. Further, in the present embodiment, since the ionization rate of the vaporized substance is extremely high, the vaporized substance and the active gas can be introduced into the vacuum chamber 14 alone or together with the inert gas to form a thin film. It is also possible to easily form a compound thin film by combining these compounds. Therefore, for example, A1 ₂ O
_{3 In} the case of forming a thin film, Al is selected as the evaporation material, Ar is selected as the inert gas, and O ₂ (oxygen) is selected as the active gas. In addition, for example, In ₂ O ₃ thin film, Sn
When forming an O ₂ thin film, a ZnO thin film, etc., In (indium), Sn (tin), Zn (zinc), etc. are selected as evaporation materials, and O ₂ is selected as an introduction gas. The following description will be given for the case of forming a more complex compound thin film of an evaporated substance and an active gas.

The inside of the vacuum chamber 14 is previously set to 10 ⁻⁵ to 10 ⁻⁶ To.
After adjusting the pressure to rr, a mixed gas of a predetermined active gas and an inert gas is introduced, if necessary, to obtain a pressure of 10 ⁻⁴ to 10 ⁻² Torr.
Adjust to the pressure of. In such a bear, the film winding type thin film forming apparatus shown in FIG. 1 is operated. The film substrate 32 on which a thin film is to be formed starts running. That is, the film substrate 32 is unwound from the unwinder roll 34, moves on the pair of guides 38 having a predetermined concave surface shape with respect to the evaporation source 18, and then is wound around the winder roll 36.

On the other hand, the switches of the AC power supply 40, the DC power supply 42, and the DC power supply 44 are also turned on. Therefore, an electric current is passed through the evaporation source 18 and heated by resistance heating to evaporate a predetermined evaporation material. Further, an electric current is also applied to the filament 20 and is heated by resistance heating to emit thermoelectrons. Further, a positive potential is applied to the grid 22 with respect to the evaporation source 18 and the filament 20. Evaporation source 1
The vaporized substance evaporated from 8 flies in all directions, but the vaporized substance flying in the lateral direction is blocked by a pair of deposition-preventing walls 30 that are installed with the vapor source 18 interposed therebetween, and a predetermined amount is given to the vapor source 18. The evaporation substance is prevented from adhering to the surface of the film substrate 32 other than the film substrate 32 facing the concave shape. Further, the vaporized substance flying upward from the vaporization source 18 with a fan-shaped spread is held by the pair of guides 38 at both ends and goes to the film substrate 32 having a predetermined concave shape with respect to the vaporization source 18.

A part of the vaporized substance flying toward the film substrate 32 having the concave shape collides with the thermoelectrons emitted from the filament 20 and is ionized. At the same time, the active gas introduced into the vacuum chamber 14 is also ionized by collision with the thermoelectrons emitted from the filament 20. Therefore, the ionized evaporation material and the ionized active gas are in a plasma state.
In this way, the partially ionized evaporation material flies toward the film substrate 32 while reacting with the active gas in the plasma space. Then, after further passing through the grid 22, it collides with and adheres to the film substrate 32. At this time, most of the thermoelectrons emitted from the filament 20 are absorbed by the grid 22, so that they hardly reach the film substrate 32 and do not heat the film substrate 32. In this way, the running film substrate 3
2, a thin film is formed.

As described above, according to the film winding type thin film forming apparatus according to the first embodiment, the evaporation material evaporated from the evaporation source 18 is ionized by the thermoelectrons emitted from the filament 20, and high energy is obtained. Since it is not necessary to apply thermal energy of reaction temperature or crystallization temperature in forming a reactive thin film or forming a thin film by crystallization, it is possible to form a low temperature thin film. . Therefore, a plastic film substrate having no heat resistance can be used as the film substrate 32 for forming a thin film.

Further, the thermoelectrons from the filament 20 effectively contribute to the ionization of the active gas in the vacuum chamber 14, and the evaporated substance can be ionized even under a high vacuum, so that it is formed on the surface of the film substrate 32. The structure of the thin film can also be extremely precise. Usually, the density of the thin film is lower than that of the bulk, but according to the present embodiment, it is possible to obtain a density extremely close to the density of the bulk. Further, by forming the thin film under a high vacuum, it is possible to extremely reduce the gas molecules taken into the thin film, so that a high-purity thin film can be obtained.

The portion of the film substrate 32 held by the guide 38 has a concave shape with respect to the evaporation source 18, and the concave surface formed by the film substrate 32 is the evaporation source 18.
Since the number of particles of the vaporized substance from is equal to that of the concave surface, the ratio of the vaporized substance to the active gas in the reaction space until reaching the film substrate 32 can be made uniform. The film thickness and the film composition of the thin film can be made uniform, and therefore the film characteristics due to the film composition can also be made uniform.

Further, as compared with the conventional case where the film substrate has a convex shape or a flat shape with respect to the evaporation source, a film capable of maintaining the film thickness and film characteristics of the thin film within a desired range. Since the exposed area of the substrate 32 with respect to the evaporation source 18 can be widened, it is possible to significantly speed up the thin film formation. As described above, since it is possible to form a thin film having uniform film characteristics at high speed, for example, In ₂ O ₃ thin film, SnO ₂ thin film,
It is particularly effective when it is necessary to produce a transparent conductive film such as a ZnO thin film.

In the film winding type thin film forming apparatus according to the first embodiment, a boat-shaped resistance heating evaporation source 18 made of, for example, tungsten or molybdenum is used as the evaporation source 18. However, a resistance heating type evaporation source having a coil shape may be used instead of the boat shape. Further, instead of the resistance heating type evaporation source 18, it is also possible to appropriately use an evaporation source used in a conventional vacuum evaporation method such as an electron beam evaporation source.

The predetermined concave shape of the film substrate 32, which is held by the pair of guides 38, with respect to the evaporation source 18 is a surface in which the amount of particles of the evaporation substance from the evaporation source 18 is equal, but is not necessarily the concave shape. Film substrate 3
Even if the whole 2 is not a surface having the same amount of particles of the evaporated substance, it may have a concave shape including at least a part of the surface having the same amount of particles of the evaporated substance. Even in this case, the film thickness and the film composition distribution in the running direction are remarkably different from those in the case of the ordinary film winding type thin film formation in which the film substrate is run on the curved convex surface and when the film substrate is run on a flat surface. Can be improved.

(Second Embodiment) A film winding type thin film forming apparatus according to a second embodiment of the present invention is shown in FIG.
This will be described with reference to FIG. Here, FIG. 2 is a schematic cross-sectional view showing a film winding type thin film forming apparatus according to the second embodiment. The entire structure of the film winding type thin film forming apparatus according to the present embodiment is almost the same as the structure of the film winding type thin film forming apparatus according to the first embodiment shown in FIG. The present embodiment is characterized in that the counter electrode is provided in. Therefore, the same components as those of the film winding type thin film forming apparatus shown in FIG. 1 are denoted by the same reference numerals, and the description thereof will be omitted. To do.

In FIG. 2, an airtight vacuum chamber 14 formed by a base plate 10 and a bell jar 12.
Inside, there is a resistance heating type evaporation source 1 from the bottom to the top.
8, a thermoelectron-generating filament 20, and a mesh-shaped grid 22 through which an evaporated substance passes are sequentially arranged. Further, a pair of deposition-preventing walls 30 are installed opposite to each other with the evaporation source 18 and the like interposed therebetween. Further, on the base plate 10 in the vacuum chamber 14, an unwinder roll 34 for feeding the film substrate 32 and a winder roll 36 for winding the film substrate 32 are installed to face each other with the evaporation source 18 and the like interposed therebetween. There is.

Above the grid 22, the evaporation source 18
On the other hand, a pair of guides 38 having a predetermined concave shape are installed, and both ends of the film substrate 32 are slid on the pair of guides 38. Therefore, the film substrate 32 has a predetermined concave surface shape with respect to the evaporation source 18 in the portions where both ends thereof are held by the pair of guides 38.

The pair of support / combined electrodes 24a, 24b holding the evaporation source 18 is connected to the evaporation AC power supply 40, and the pair of support / combined electrodes 26a, 26b holding the filament 20 is a DC power supply. The support / electrode 28 that is connected to the positive and negative electrodes of 42 and holds the grid 22 is connected to the positive electrode of a DC power supply 44 having a higher voltage than the DC power supply 42. Further, the support / electrode 24 a of the evaporation source 18 is connected to the negative electrode of the DC power supply 42 and the negative electrode of the DC power supply 44, and the support / electrode 2 of the filament 20 is also used.
6a is connected to the negative electrode of the DC power supply 44.

Then, above the film substrate 32 of the concave surface portion held by the pair of guides 38, similarly to the concave surface shape of the film substrate 32, a counter electrode 46 having a predetermined concave surface shape with respect to the evaporation source 18 is formed. The feature of this embodiment lies in that That is, the counter electrode 46 covers the entire film substrate 32 of the concave surface portion at a constant interval.

The counter electrode 46 is held by a support / cumulative electrode 48.
Penetrates through the base plate 10 in a state of maintaining electrical insulation with the base plate 10 and is drawn out of the vacuum chamber 14. Naturally, the airtightness is secured in the penetrating portion of the base plate 10. The support / electrode 48 is connected to the negative electrode of the high-voltage DC power supply 44. Therefore, the potential of the grid 22 becomes a positive potential with respect to the potentials of the evaporation source 18 and the filament 20, and an electric field from the grid 22 side to the evaporation source 18 side is generated. The potential of the counter electrode 46 is also positive, and an electric field from the grid 22 side to the counter electrode 46 side is generated.

Next, thin film formation by the film winding type thin film forming apparatus shown in FIG. 2 will be described. Similar to the case of the film winding type thin film forming apparatus shown in FIG. 1,
After the desired gas is introduced into the vacuum chamber 14 and the pressure thereof is adjusted, the traveling of the film substrate 32 is started. That is, the film substrate 32 is unwound from the unwinder roll 34, moved along a pair of guides 38 having a predetermined concave shape, and then wound up by the winder roll 36.

Further, when the evaporation material evaporated from the evaporation source 18 is directed upward to the film substrate 32 having a predetermined concave shape with a fan-shaped spread, a part of the evaporation material is released from the filament 20 in the middle thereof. At the same time as the electrons are collided and ionized, the active gas introduced into the vacuum chamber 14 is also ionized by the collision with the thermoelectrons from the filament 20 and becomes a plasma state. Thus
The partially ionized vaporized material flies toward the film substrate 32 while reacting with the active gas in the plasma space. At this time, there is an electric field from the grid 22 side to the counter electrode 46 side, that is, toward the film substrate 32 side, between the grid 22 and the counter electrode 46. The ionized evaporation material is accelerated toward the film substrate 32 and collides with the film substrate 32 with high energy and adheres thereto.
At this time, most of the thermoelectrons emitted from the filament 20 are absorbed by the grid 22, but some thermoelectrons that have passed through the grid 22 also have an electric field directed from the grid 22 side to the counter electrode 46 side. Since it is decelerated by the action of, the film substrate 32 can hardly be reached, or even if some of the thermoelectrons reach the film substrate 32, the film substrate 32 cannot be heated.

As described above, in the film winding type thin film forming apparatus according to the second embodiment, the film substrate 32 in the portion held by the guide 38 has a concave shape with respect to the evaporation source 18. The concave surface formed by the film substrate 32 is a concave surface in which the number of particles of the evaporation material from the evaporation source 18 is equal, or a concave surface including at least a part in which the number of particles of the evaporation material from the evaporation source 18 is equal. As a result, the same effect as in the case of the first embodiment can be obtained, and a thin film that is dense and highly pure and has uniform film thickness and film characteristics can be obtained at high speed.

Further, above the film substrate 32 in the concave shape portion held by the guide 38, a counter electrode 46 having a similar concave surface shape so as to cover the film substrate 32.
Is installed, and the DC power source 44 is provided via the electrode 48 which also serves as a support.
Connected to the negative electrode, the potential of the counter electrode 46 becomes negative with respect to the potential of the grid 22, and an electric field from the grid 22 side to the counter electrode 46 side is generated. For this reason, the partially ionized evaporation material that has passed through the grid 22 is accelerated toward the film substrate 32 side by the action of this electric field, and collides with the film substrate 32 with high energy and adheres thereto. Further, even if some of the thermoelectrons emitted from the filament 20 pass through the grid 22, they are decelerated by the action of this electric field and do not heat the film substrate 32. Therefore, a thin film having better adhesion can be formed at a higher speed than in the case of the first embodiment.

In the film winding type thin film forming apparatus according to the second embodiment, the pair of guides 3
A counter electrode 46 having the same concave shape is provided above the film substrate 32 in the concave shape held by 8.
The potential of the counter electrode 46 is set to be a negative potential with respect to the potential of the grid 22, but the shape of the counter electrode 46 is not necessarily concave. However, the counter electrode 4
The shape of 6 also changes the distance between the counter electrode 46 and the grid 22 and also changes the strength distribution of the electric field therebetween, so that the electric field strength from the grid 22 side to the film substrate 32 is substantially uniform. Is desirable.

Further, instead of installing the counter electrode 46 and setting the potential of the counter electrode 46 to be a negative potential with respect to the potential of the grid 22, a pair of concave guides 38 for holding the film substrate 32 are provided. It may be connected to the negative electrode of the DC power source 44 so that the potential of the pair of guides 38 becomes a negative potential with respect to the potential of the grid 22. Again,
An electric field is generated from the grid 22 side toward the guide 38 side, that is, toward the film substrate 32, and the partially ionized vaporized substance passing through the grid 22 is accelerated by the action of this electric field and collides with the film substrate 32 with high energy. Since they adhere to each other, it becomes possible to form a thin film having good adhesion at high speed. However, in consideration of the intensity distribution of the electric field from the grid 22 side to the film substrate 32, the counter electrode 46 installed so as to cover the entire film substrate 32 in the concave portion is superior in the uniformity of the electric field intensity. ing.

(Third Embodiment) FIG. 3 shows a film winding type thin film forming apparatus according to a third embodiment of the present invention.
This will be described with reference to FIG. Here, FIG. 3A is a schematic sectional view showing the inside of the vacuum chamber of the film winding type thin film forming apparatus according to the third embodiment, and FIG. 3B is a side view thereof. The overall structure of the film winding type thin film forming apparatus according to the present embodiment is almost the same as the structure of the film winding type thin film forming apparatus according to the first embodiment shown in FIG. The present embodiment is characterized in that a pair of disks is provided instead of the pair of guides 38 as means. Therefore, the same components as those of the film winding type thin film forming apparatus shown in FIG. 1 are denoted by the same reference numerals and the description thereof will be omitted, and the disc which is the characteristic point of the present embodiment will be mainly described. .

In FIG. 3, a resistance heating type longitudinal evaporation source 18a extending in the depth direction of the drawing is provided in an airtight vacuum chamber.
Is installed. When the width of the film substrate 32 is wide, the longitudinal evaporation source 18a is used to make the film thickness distribution in the width direction uniform. In addition, this longitudinal evaporation source 1
Even if, for example, a minute flat surface evaporation source or a point evaporation source is arranged in parallel instead of 8a, the film thickness distribution in the width direction of a wide film substrate can be made uniform.

Above the longitudinal evaporation source 18a, a filament 20 for generating thermoelectrons and a mesh-shaped grid 22 for passing the evaporation material are sequentially arranged. A pair of deposition-prevention walls 30 are installed with the longitudinal evaporation source 18a and the like sandwiched therebetween. In addition, in the vacuum chamber, the film substrate 3
An unwinder roll 34 that delivers 2 and a winder roll 36 that winds up the film substrate 32 are placed opposite to each other with a longitudinal evaporation source 18a and the like interposed therebetween.

Further, a pair of discs 50 as film substrate holding means are arranged so as to face each other, and both ends of the film substrate 32 are held on the pair of discs 50,
The present embodiment is characterized in that the film substrate 32 is made to travel with the rotation of the disk 50. Here, the position of the longitudinal evaporation source 18a is set to be on a line connecting the lowermost ends of the pair of disks 50. Therefore, the portion of the film substrate 32 held by the disk 50 has a concave shape close to the inner surface of the cylinder with respect to the longitudinal evaporation source 18a.

Next, the thin film formation by the film winding type thin film forming apparatus shown in FIG. 3 will be described. Vacuum tank 14
A desired gas is introduced thereinto, and after adjusting the pressure thereof, the traveling of the film substrate 32 is started. That is, the film substrate 32 is unwound from the unwinder roll 34, travels on the pair of discs 50 with its rotation, and then is wound up by the winder roll 36. Also, the longitudinal evaporation source 18a
When the vaporized substance evaporated from the film heads for the concave film substrate 32 held by the disk 50, a part of the vaporized substance collides with the thermoelectrons emitted from the filament 20 and is ionized during the process, and The film substrate 32 becomes a plasma state together with the ionized active gas and reacts with the active gas in this plasma space.
Once fly to.

As described above, according to the film winding type thin film forming apparatus of the third embodiment, a pair of discs is used instead of the pair of concave guides 38 in the first embodiment. 50 is provided, but in this case as well, the disc 50
The portion of the film substrate 32 held by the film has a concave shape close to the inner surface of the cylinder with respect to the longitudinal evaporation source 18a, and the concave surface formed by the film substrate 32 is the longitudinal evaporation source 18a.
Since the surface is a concave surface including at least a portion where the number of particles of the vaporized substance from a is equal, the same effect as in the case of the first embodiment described above is obtained, and the film thickness and film characteristics are dense and highly pure. It is possible to obtain a uniform thin film at high speed. Further, by using the longitudinal evaporation source 18a, the film substrate 3
It is possible to further improve the uniformity of the film thickness and film characteristics in the width direction of No. 2.

Further, since the film substrate 32 is not moved by the rotation of the pair of discs 50 and the film substrate 32 is not slid on the disc 50, abrasion or static electricity due to friction between the film substrate 32 and the disc 50 is generated. Can be prevented. Further, since the traveling speed of the film substrate 32 can be controlled by the rotation speed of the disk 50, the film substrate 32 can be stably driven at a constant speed.
Therefore, the film thickness of the film substrate 32 in the traveling direction and the uniformity of the film characteristics can be further improved.

Also in the film winding type thin film forming apparatus according to the third embodiment, the counter electrode 46 is installed and the potential of the counter electrode 46 is set in the same manner as in the case of the second embodiment. May be a negative potential with respect to the potential of the grid 22. Also in this case, the partially ionized evaporation material is accelerated by the action of the electric field from the grid 22 side toward the film substrate 32,
Since it collides with and adheres to the substrate with high energy, it becomes possible to form a thin film having better adhesion at high speed.

(Fourth Embodiment) FIG. 4 shows a film winding type thin film forming apparatus according to a fourth embodiment of the present invention.
This will be described with reference to FIG. Here, FIG. 4A is a schematic sectional view showing the inside of the vacuum chamber of the film winding type thin film forming apparatus according to the fourth embodiment, and FIG. 4B is a side view thereof. The overall structure of the film winding type thin film forming apparatus according to the present embodiment is almost the same as the structure of the film winding type thin film forming apparatus according to the third embodiment shown in FIG. A pair of discs 5 as means
A feature of the present embodiment is that a pair of endless belts that are rotated by a plurality of drive rollers are provided instead of zero. Therefore, the same components as those of the film winding type thin film forming apparatus shown in FIG. 3 are designated by the same reference numerals, and the description thereof will be omitted. The pair of endless belts will be mainly described.

In FIG. 4, in the airtight vacuum chamber, from the bottom to the top, a resistance heating type longitudinal evaporation source 18a,
A thermoelectron-generating filament 20 and a mesh-shaped grid 22 through which an evaporated substance passes are sequentially arranged. Also,
A pair of deposition-preventing walls 30 sandwiching the longitudinal evaporation source 18a and the like.
Is installed. Further, in the vacuum chamber, an unwinder roll 34 for unwinding the film substrate 32 and a winder roll 36 for winding the film substrate 32 are installed to face each other with the longitudinal evaporation source 18a and the like interposed therebetween.

A plurality of driving rollers 52a, 52b, ..., 52i forming a pair are arranged above the grid 22 at predetermined positions, and in the vicinity of the base plate 10 in the vacuum chamber 14, the pair of driving rollers 52a, 52b ,. There are two drive rollers 54a and 54b. A pair of flexible endless belts 56 are hung on the pair of drive rollers 52a, 52b, ..., 54b. The present embodiment is characterized in that both ends of the film substrate 32 are held on the pair of endless belts 56, and the film substrate 32 travels as the endless belt 56 rotates. .

Further, the arrangement positions of the pair of drive rollers 52a, 52b, ..., 52i above the grid 22 can be freely changed. For this reason, the positions of the drive rollers 52a, 52b, ... Similar to the case, the longitudinal evaporation source 18a is formed into a predetermined concave shape.

Next, thin film formation by the film winding type thin film forming apparatus shown in FIG. 4 will be described. After the desired gas is introduced into the vacuum chamber and the pressure thereof is adjusted, the film substrate 32 starts to run. That is, the film substrate 3
2 is fed from the unwinder roll 34. The pair of endless belts 56 is also rotated by the rotation of the pair of drive rollers 52a, 52b, ..., 54b.
The vehicle travels as the endless belt 56 rotates. After that, it is wound around the winder roll 36.

Further, when the evaporation material evaporated from the longitudinal evaporation source 18a moves toward the concave film substrate 32 held by the disk 50, a part of the evaporation material is released from the filament 20 along the way. The electrons collide with each other to be ionized, and similarly become a plasma state together with the ionized active gas, react with the active gas in the plasma space, and fly toward the film substrate 32.

As described above, according to the film winding type thin film forming apparatus of the fourth embodiment, instead of the pair of discs 50 of the third embodiment, a pair of drive rollers 52a, A pair of endless belts 56 which rotate by 52b, ...
52i of the film substrate 32 which is held by the pair of endless belts 56 by adjusting the arrangement positions of 2b, ..., 52i.
Is a concave surface with respect to the longitudinal evaporation source 18a, and the concave surface formed by the film substrate 32 is a concave surface including at least a part in which the number of particles of the evaporation material from the longitudinal evaporation source 18a is equal to the concave surface. The same effect as in the case of the third embodiment is obtained, the film thickness and film characteristics are uniform with high density and high purity.
It is possible to rapidly obtain a thin film having a uniform thickness in the width direction of the film substrate 32.

Further, since the film substrate 32 is not moved by the rotation of the pair of endless belts 56 and the film substrate 32 is not slid, the film substrate 32 and the endless belt 56 are not rubbed by scratches or static electricity. Occurrence can be prevented. Further, since the traveling speed of the film substrate 32 can be controlled by the rotation speed of the drive rollers 52a, 52b, ..., 54b, the film substrate 32 can be stably driven at a constant speed. Therefore, the film thickness of the film substrate 32 in the traveling direction and the uniformity of the film characteristics can be further improved.

Also in the film winding type thin film forming apparatus according to the fourth embodiment, the counter electrode 46 is provided and the potential of the counter electrode 46 is set in the same manner as in the second embodiment. May be a negative potential with respect to the potential of the grid 22, or alternatively, the potential of the pair of drive rollers 52a, 52b, ..., 52i above the grid 22 may be negative with respect to the potential of the grid 22. It may be. Even in this case, since the partially ionized evaporated substance is accelerated by the action of the electric field from the grid 22 side toward the film substrate 32 and collides with and adheres to the film substrate 32 with high energy, a thin film having better adhesiveness Can be formed at high speed.

(Fifth Embodiment) FIG. 5 shows a film winding type thin film forming apparatus according to a fifth embodiment of the present invention.
This will be described with reference to FIG. Here, FIG. 5A is a schematic cross-sectional view showing the inside of the vacuum chamber of the film winding type thin film forming apparatus according to the fifth embodiment, and FIG. 5B is a side view thereof. The overall structure of the film winding type thin film forming apparatus according to the present embodiment is almost the same as the structure of the film winding type thin film forming apparatus according to the third embodiment shown in FIG. A pair of discs 5 as a means of traveling
The present embodiment is characterized in that a plurality of rollers are provided instead of 0. Therefore, the same components as those of the film winding type thin film forming apparatus shown in FIG. 3 are denoted by the same reference numerals and the description thereof will be omitted, and the plurality of rollers which are the characteristic points of the present embodiment will be mainly described. explain.

In FIG. 5, in the airtight vacuum chamber, from the lower side to the upper side, a resistance heating type longitudinal evaporation source 18a,
A thermoelectron-generating filament 20 and a mesh-shaped grid 22 through which an evaporated substance passes are sequentially arranged. Also,
A pair of deposition-preventing walls 30 sandwiching the longitudinal evaporation source 18a and the like.
Is installed. Further, in the vacuum chamber, an unwinder roll 34 for unwinding the film substrate 32 and a winder roll 36 for winding the film substrate 32 are installed to face each other with the longitudinal evaporation source 18a and the like interposed therebetween.

Above the grid 22, rollers 58a, 58b, ..., 58g longer than the width of the film substrate 32 are provided.
Are arranged at predetermined positions. , 58g, the film substrate 32 is held on the rollers 58a, 58b, ... There are morphological features. Also, the longitudinal evaporation source 18a of these rollers 58a, 58b, ..., 58g.
The deposition-prevention plate 60 is installed on each side, and the longitudinal evaporation source 1
Evaporated material from 8a is transferred to these rollers 58a, 58b,
..., 58g It is designed not to deposit directly on the surface.

Further, the rollers 58a above the grid 22,
The arrangement positions of 58b, ..., 58g can be freely changed. Therefore, the arrangement position is adjusted so that the portion of the film substrate 32 held by the rollers 58a, 58b, ... To have a predetermined concave shape.

Next, thin film formation by the film winding type thin film forming apparatus shown in FIG. 5 will be described. After the desired gas is introduced into the vacuum chamber and the pressure thereof is adjusted, the film substrate 32 starts to run. That is, the film substrate 3
2 is unwound from the unwinder roll 34, travels on the rollers 58a, 58b, ...

Further, when the vaporized substance evaporated from the longitudinal vaporization source 18a moves toward the film substrate 32 having a concave shape held by the rollers 58a, 58b, ... Two
Colliding with thermionic electrons emitted from 0 and being ionized, it becomes a plasma state with the similarly ionized active gas,
It flies toward the film substrate 32 while reacting with the active gas in this plasma space.

As described above, according to the film winding type thin film forming apparatus in the fifth embodiment, the roller 58 is used instead of the pair of disks 50 in the third embodiment.
, 58g are provided, but in this case as well, rollers 58a, 58b, ..., 5 above the grid 22 are provided.
By adjusting the arrangement position of 8g, the rollers 58a, 58b, ...
58 g of the film substrate 32 held by the part
Is a concave surface with respect to the longitudinal evaporation source 18a, and the concave surface formed by the film substrate 32 is a concave surface including at least a part in which the number of particles of the evaporation material from the longitudinal evaporation source 18a is equal to the concave surface. The same effect as in the case of the third embodiment is obtained, the film thickness and film characteristics are uniform with high density and high purity.
It is possible to rapidly obtain a thin film having a uniform thickness in the width direction of the film substrate 32.

Further, rollers 58a, 58b, ..., 58g
The rotation of the film substrate 32 does not cause the film substrate 32 to run and slide the film substrate 32.
It is possible to prevent abrasion and static electricity due to friction between the rollers 58a, 58b, ..., 58g. In addition, the traveling speed of the film substrate 32 is set to the rollers 58a, 58b,
Since it is possible to control the rotation speed of 58 g, the film substrate 32 can be stably driven at a constant speed. Therefore, the film thickness of the film substrate 32 in the traveling direction and the uniformity of the film characteristics can be further improved. Further, since the lengths of the rollers 58a, 58b, ... Even if you can't
Can respond.

In the film winding type thin film forming apparatus according to the fifth embodiment, the counter electrode 46 is provided and the potential of the counter electrode 46 is set in the same manner as in the second embodiment. May be negative with respect to the potential of the grid 22, or alternatively, the potential of the rollers 58a, 58b, ..., 58g above the grid 22 may be negative with respect to the potential of the grid 22. Good.
Even when a negative electric potential is applied to the rollers 58a, 58b, ... Therefore, it becomes possible to uniformly and rapidly form a thin film having good adhesion to the same extent as in the case where the counter electrode 46 is installed and a negative potential is applied.

Further, rollers 58a, 58b, ..., 58g
May be a film substrate cooling roller in which a refrigerant such as water is introduced into each roller. In this case, the roller 58 as the film substrate cooling roller
, 58g cools the film substrate 32 held by it, so that it is possible to deal with the case where the film substrate 32 needs to be cooled during thin film formation.

(Sixth Embodiment) FIG. 6 shows a film winding type thin film forming apparatus according to a sixth embodiment of the present invention.
This will be described with reference to FIG. Here, FIG. 6 is a schematic cross-sectional view showing the inside of the vacuum chamber of the film winding type thin film forming apparatus according to the sixth embodiment. The overall structure of the film winding type thin film forming apparatus according to the present embodiment is almost the same as the structure of the film winding type thin film forming apparatus according to the third embodiment shown in FIG. The present embodiment is characterized in that a combination of a plurality of film substrate cooling rollers and a plurality of tension setting rollers is provided in place of the pair of disks 50 as the moving means. Therefore, the same components as those of the film winding type thin film forming apparatus shown in FIG. 3 are denoted by the same reference numerals, and the description thereof will be omitted. A combination of a roller and a plurality of tension setting rollers will be mainly described.

In FIG. 6, in the airtight vacuum chamber, from the bottom to the top, a resistance heating type longitudinal evaporation source 18a,
A filament 20 for generating thermoelectrons and a mesh-shaped grid 22 for passing an evaporated substance are sequentially arranged at appropriate intervals. In addition, sandwiching these longitudinal evaporation sources 18a, etc.,
A pair of deposition barriers 30 are installed. Further, in the vacuum chamber, an unwinder roll 34 for unwinding the film substrate 32 and a winder roll 36 for winding the film substrate 32 are installed to face each other with the longitudinal evaporation source 18a and the like interposed therebetween.

Above the grid 22, a film substrate cooling roller 62a longer than the width of the film substrate 32,
A plurality of 62b, ..., 62g are arranged at predetermined positions,
A plurality of tension setting rollers 64a, 64b, ..., 64h are arranged slightly above them with a slight displacement. , 64h and the film substrate cooling rollers 62a, 62b, ..., 62g are alternately passed one by one, respectively, to be held, and the tension setting roller 64a, 64
, 64h while adjusting the tension of the film substrate 32, the film substrate cooling rollers 62a, 62b,
The feature of the present embodiment is that the film substrate 32 is made to run by the rotation of 62 g. , 64h are installed on the side of the longitudinal evaporation source 18a, respectively, and the vapor deposition material from the longitudinal evaporation source 18a prevents the evaporation substances from the longitudinal evaporation source 18a. …, 64h so that it is not directly deposited on the surface. The method for cooling the film substrate cooling rollers 62a, 62b, ..., 62g is as follows.
A method of introducing a refrigerant into the roller, such as a known water cooling method, is adopted.

Further, the film substrate cooling roller 62a,
62g and tension setting rollers 64a, 64
The arrangement positions of b, ..., 64h can be freely changed. Therefore, by adjusting the arrangement position, the film substrate 32 in the portion held by the film substrate cooling rollers 62a, 62b, ..., 62g intermittently has a predetermined concave surface shape with respect to the longitudinal evaporation source 18a. Try to make it.

Next, the thin film formation by the film winding type thin film forming apparatus shown in FIG. 6 will be described. After the desired gas is introduced into the vacuum chamber and the pressure thereof is adjusted, the film substrate 32 starts to run. That is, the film substrate 3
2 is fed from the unwinder roll 34. The film substrate 32 fed from the unwinder roll 34 includes a tension setting roller 64a, a film substrate cooling roller 62a, a tension setting roller 64b, ..., A film substrate cooling roller 62g, and a tension setting roller 64h.
And the film substrate cooling roller 6
The film substrate 32 runs along with the rotation of 2a, 62b, ..., 62g. At this time, the tension setting roller 64a,
The tension of the film substrate 32 is adjusted by 64b, ..., 64h. After that, it is wound around the winder roll 36.

Further, the evaporation material evaporated from the longitudinal evaporation source 18a is fed to the film substrate cooling rollers 62a, 62b,
.., 62 g, and while intermittently heading to the film substrate 32 having a concave shape, a part of the evaporated substance collides with the thermoelectrons emitted from the filament 20 and is ionized, and is similarly ionized. The active gas enters a plasma state, reacts with the active gas in this plasma space, and flies toward the running film substrate 32.

As described above, according to the film winding type thin film forming apparatus in the sixth embodiment, instead of the pair of discs 50 in the third embodiment, the film substrate cooling rollers 62a, , 62g and tension setting rollers 64a, 64b, ..., 64h are provided, and in this case as well, the film substrate cooling rollers 62a, 62b ,.
Adjusting the 2g placement position, the film substrate cooling roller 6
The portions of the film substrate 32 held by 2a, 62b, ..., 62g are intermittently concave with respect to the longitudinal evaporation source 18a, and the intermittent concave surface formed by the film substrate 32 is separated from the longitudinal evaporation source 18a. Since it becomes a concave surface that includes at least part of the surface where the number of particles of the evaporated substance of is equal,
The same effects as in the case of the third embodiment described above are obtained, and a thin film that is dense and highly pure and has uniform film thickness and film characteristics, and further improves its uniformity in the width direction of the film substrate 32. A thin film can be obtained at high speed.

Further, the film substrate cooling roller 62a,
62g and tension setting rollers 64a, 64
.., 64h, the film substrate 32 is not moved while keeping a constant tension, and the film substrate 32 is not slid. Therefore, the film substrate 32 and the film substrate cooling rollers 62a, 62b ,. It is possible to prevent abrasion and static electricity due to friction with the tension setting rollers 64a, 64b, ..., 64h. In addition, the traveling speed of the film substrate 32 is set to the roller 6 for cooling the film substrate.
Since it can be controlled by the rotational speeds of 2a, 62b, ..., 62g, the film substrate 32 can be stably driven at a constant speed. Therefore, the film thickness of the film substrate 32 in the traveling direction and the uniformity of the film characteristics can be further improved.

Further, the film substrate cooling roller 62a,
Since the lengths of 62b, ..., 62g are longer than the width of the film substrate 32, it is necessary to deal with the case where the film substrate 32 is wide and cannot be stably held only by supporting only its end portion. You can Further, since the film substrate 32 held by these rollers can be cooled by the film substrate cooling rollers 62a, 62b, ..., 62g, even when the film substrate 32 needs to be cooled during thin film formation. Can respond.

In the film winding type thin film forming apparatus according to the sixth embodiment, the counter electrode 46 is provided and the potential of the counter electrode 46 is set in the same manner as in the second embodiment. May have a negative potential with respect to the potential of the grid 22, or alternatively, the film substrate cooling rollers 62a, 62b, ..., 6 above the grid 22.
2g or tension setting rollers 64a, 64b, ..., 64h
The potential may be negative with respect to the potential of the grid 22. The latter film substrate cooling roller 62
62g, or a tension setting roller 64a,
Even when a negative potential is applied to 64b, ..., 64h, the intensity distribution of the electric field from the grid 22 side to the film substrate 32 is almost uniform with respect to the entire film substrate 32 in the concave surface portion. It is possible to form a thin film having good adhesiveness uniformly and at a high speed, which is almost the same as the case where the counter electrode 46 is installed and a negative potential is applied.

(Seventh Embodiment) A film winding type thin film forming apparatus according to a seventh embodiment of the present invention is shown in FIG.
This will be described with reference to FIG. Here, FIG. 7A is a schematic sectional view showing the inside of the vacuum chamber of the film winding type thin film forming apparatus according to the seventh embodiment, and FIG. 7B is a side view thereof. The overall structure of the film winding type thin film forming apparatus according to the present embodiment is almost the same as the structure of the film winding type thin film forming apparatus according to the second embodiment shown in FIG. Film substrate 32 above it
The present embodiment is characterized in that a discharge stabilization shield is provided between and. Therefore, the same constituent elements as those of the film winding type thin film forming apparatus shown in FIG. 2 are denoted by the same reference numerals, and the description thereof will be omitted. Explain mainly. However, the longitudinal evaporation source 18a shown in the third embodiment is used as the evaporation source.

In FIG. 7, in the airtight vacuum chamber, from the bottom to the top, a resistance heating type longitudinal evaporation source 18a,
A filament 20 for generating thermoelectrons and a mesh-shaped grid 22 for passing an evaporated substance are sequentially arranged at appropriate intervals. In addition, sandwiching these longitudinal evaporation sources 18a, etc.,
A pair of deposition barriers 30 are installed. Further, in the vacuum chamber, an unwinder roll 34 for unwinding the film substrate 32 and a winder roll 36 for winding the film substrate 32 are installed to face each other with the longitudinal evaporation source 18a and the like interposed therebetween.

Above the grid 22, a pair of guides 38 having a predetermined concave surface shape with respect to the longitudinal evaporation source 18a.
Is installed, and both ends of the film substrate 32 running on the pair of guides 38 are slid. Therefore, the film substrate 32 has a pair of guides 38 on both ends thereof.
The portion held by has a predetermined concave surface shape with respect to the longitudinal evaporation source 18a.

Further, above the concave portion of the film substrate 32 held by the pair of guides 38, like the concave shape of the film substrate 32, a counter electrode having a predetermined concave shape with respect to the evaporation source 18 is formed. 46 is installed and covers the entire film substrate 32 of the concave portion at a constant interval. Further, the potential of the counter electrode 46 is a negative potential with respect to the potential of the grid 22, and an electric field is generated from the grid 22 side to the counter electrode 46 side. A predetermined concave surface is formed between the grid 22 and the film substrate 32 held by the pair of guides 38 above the grid 22 so that the discharge is not affected by the potential of the film substrate 32. The present embodiment is characterized in that a discharge stabilizing shield 68 having a shape is provided. The shield 68 has a shape such as a mesh shape that allows the evaporated substance evaporated from the evaporation source 18 to pass therethrough.

Next, the thin film formation by the film winding type thin film forming apparatus shown in FIG. 7 will be described. After the desired gas is introduced into the vacuum chamber and the pressure thereof is adjusted, the film substrate 32 starts to run. That is, the film substrate 3
2 is unrolled from the unwinder roll 34, and after moving along a pair of guides 38 having a predetermined concave shape,
It is wound up on a winder roll 36. Further, when the evaporation material evaporated from the longitudinal evaporation source 18 a travels to the concave film substrate 32 held by the guide 38, a part of the evaporation material collides with thermoelectrons emitted from the filament 20 in the middle thereof. Then, it is ionized, becomes a plasma state together with the similarly ionized active gas, reacts with the active gas in this plasma space, and flies toward the running film substrate 32.

At this time, from the grid 22 side to the counter electrode 4
Due to the action of the electric field toward the 6 side, that is, toward the film substrate 32 side, the partially ionized vaporized substance that has passed through the grid 22 is accelerated toward the film substrate 32 and collides with and adheres to the film substrate 32 with high energy. . In addition, at this time, since the mesh-like discharge stabilizing shield 68 is provided on the front surface of the film substrate 32, while the evaporated substance toward the film substrate 32 passes, the discharge is at the potential of the film substrate 32. It will not be affected.

As described above, according to the film winding type thin film forming apparatus according to the seventh embodiment, the mesh-like discharge stabilizing shield 68 is formed along the front surface of the film substrate 32 having a predetermined concave shape. Is provided, the shield serves as a discharge electrode, and the discharge can be generated on the side of the evaporation source rather than the shield, and does not depend on the potential of the film. And since the potential of the shield is always constant,
The discharge conditions can be stabilized. In addition, the discharge is the film substrate 32.
Since it is not affected by the potential of the film winding type thin film forming apparatus according to the second embodiment, the film thickness and the uniformity of film characteristics are further improved. You can

Also in the film winding type thin film forming apparatus according to the seventh embodiment, the counter electrode 46 is provided so that the potential of the counter electrode 46 becomes a negative potential with respect to the potential of the grid 22. Alternatively, the potential of the pair of guides 38 may be negative with respect to the potential of the grid 22.

(Eighth Embodiment) FIG. 8 shows a film winding type thin film forming apparatus according to an eighth embodiment of the present invention.
This will be described with reference to FIG. Here, FIG. 8 is a schematic cross-sectional view showing a film winding type thin film forming apparatus according to an eighth embodiment. The overall structure of the film winding type thin film forming apparatus according to the present embodiment is almost the same as the structure of the film winding type thin film forming apparatus according to the second embodiment shown in FIG. The feature of this embodiment lies in that Therefore, the same components as those of the film winding type thin film forming apparatus shown in FIG. 2 are denoted by the same reference numerals, and the description thereof will be omitted, and the grid, which is a feature of the present embodiment, will be mainly described. . However, the longitudinal evaporation source 18a shown in the third embodiment is used as the evaporation source.

In FIG. 8, in the airtight vacuum chamber 14, from the bottom to the top, the resistance heating type longitudinal evaporation source 1 is provided.
8a, a filament 20 for generating thermoelectrons, and a mesh-like grid 22a for passing the vaporized substance are sequentially arranged at appropriate intervals. The feature of the present embodiment is that the shape of the grid 22a is a predetermined concave shape with respect to the longitudinal evaporation source 18a. A pair of deposition-prevention walls 30 are installed with the longitudinal evaporation source 18a and the like sandwiched therebetween. Further, in the vacuum tank 14, an unwinder roll 34 for feeding the film substrate 32 and a winder roll 36 for winding the film substrate 32 are provided in the longitudinal evaporation source 1.
8a and the like are sandwiched in between and are installed to face each other.

Above the grid 22a, a pair of guides 3 having a predetermined concave surface shape with respect to the longitudinal evaporation source 18a.
8 is installed, and both ends of the film substrate 32 are slid on the pair of guides 38. Therefore, the film substrate 32 has a predetermined concave surface shape with respect to the longitudinal evaporation source 18a in a portion where both ends thereof are held by the pair of guides 38. Therefore, an extension of the normal line of the concave grid surface is formed between the grid 22a having a predetermined concave shape with respect to the longitudinal evaporation source 18a and the film substrate 32 held by the guide 38 above the grid 22a. At any position on 22a, there is a relationship of overlapping with the normal line of the concave film substrate surface.

Further, above the concave portion of the film substrate 32 held by the pair of guides 38, like the concave shape of the film substrate 32, a counter electrode having a predetermined concave shape with respect to the evaporation source 18 is formed. 46 is installed and covers the entire film substrate 32 of the concave portion at a constant interval.

The pair of supporting / combining electrodes 24a, 24b holding the evaporation source 18 is connected to the evaporation AC power source 40, and the pair of supporting / combining electrodes 26a, 26b holding the filament 20 is a DC power source. The support / electrode 28 that is connected to the positive and negative electrodes of 42 and holds the grid 22 is connected to the positive electrode of a DC power supply 44 having a higher voltage than the DC power supply 42. Further, the support / electrode 24 a of the evaporation source 18 is connected to the negative electrode of the DC power supply 42 and the negative electrode of the DC power supply 44, and the support / electrode 2 of the filament 20 is also used.
6a is connected to the negative electrode of the DC power supply 44. Also,
The support / electrode 48 that holds the counter electrode 46 is connected to the negative electrode of the DC power supply 44. Therefore, the potential of the grid 22 becomes a positive potential with respect to the potentials of the evaporation source 18 and the filament 20, and the evaporation source 1 from the grid 22 side.
The electric field toward the 8 side is generated, and the potential of the grid 22 becomes positive with respect to the potential of the counter electrode 46,
An electric field is generated from the grid 22 side to the counter electrode 46 side.

Next, the thin film formation by the film winding type thin film forming apparatus shown in FIG. 8 will be described. Vacuum tank 14
A desired gas is introduced thereinto, and after adjusting the pressure thereof, the traveling of the film substrate 32 is started. That is, the film substrate 32 is unwound from the unwinder roll 34, moved along a pair of guides 38 having a predetermined concave shape, and then wound up by the winder roll 36. Further, when the evaporation material evaporated from the longitudinal evaporation source 18 a travels to the concave film substrate 32 held by the guide 38, a part of the evaporation material collides with thermoelectrons emitted from the filament 20 in the middle thereof. Then, it becomes a plasma state together with the similarly ionized active gas, and while reacting with the active gas in this plasma space,
Fly once towards the running film substrate 32.

At this time, due to the action of the electric field from the grid 22a side toward the counter electrode 46 side, that is, toward the film substrate 32 side, the partially ionized evaporated substance passing through the grid 22a is accelerated toward the film substrate 32,
Although it collides with and adheres to the film substrate 32 with high energy, the extension of the normal line of the concave grid surface overlaps with the normal line of the concave film substrate surface.
The direction of the electric field E from 2a toward the film substrate 32 above it is perpendicular to the film substrate surface, as indicated by the arrow in the figure. Therefore, the direction of flight of the partially ionized evaporation material that collides with the film substrate surface is changed to the film substrate 32.
It is possible to make the film substrate vertical to any position above.

As described above, according to the film winding type thin film forming apparatus in the eighth embodiment, the longitudinal evaporation source 1
8a and the concave-shaped film substrate 32 held by the guide 38, the mesh-shaped grid 22a forms a predetermined concave shape with respect to the longitudinal evaporation source 18a, and the concave-shaped grid surface Since the extension of the normal line of the line overlaps with the normal line of the concave film substrate surface, the direction of the electric field E directed from the grid 22a to the film substrate 32 above it is perpendicular to the film substrate surface and is accelerated by this electric field. The partially ionized vaporized substance collides vertically with the film substrate surface at any position on the film substrate 32, and therefore, the same effect as that of the film winding type thin film forming apparatus according to the second embodiment can be obtained. In addition to the above, the orientation and crystallinity of the thin film can be made uniform, so that the film characteristics can be made more uniform.

(Ninth Embodiment) FIG. 9 shows a film winding type thin film forming apparatus according to a ninth embodiment of the present invention.
This will be described with reference to FIG. Here, FIG. 9 is a schematic cross-sectional view showing the inside of the vacuum chamber of the film winding type thin film forming apparatus according to the ninth embodiment. The overall structure of the film winding type thin film forming apparatus according to the present embodiment is almost the same as the structure of the film winding type thin film forming apparatus according to the second embodiment shown in FIG. The present embodiment is characterized in that a collimator for limiting the flight range of vaporized substances is provided in the above. Therefore, the same components as those of the film winding type thin film forming apparatus shown in FIG. 2 are denoted by the same reference numerals, and the description thereof will be omitted. . However, the longitudinal evaporation source 18a shown in the third embodiment is used as the evaporation source.

In FIG. 9, in the airtight vacuum chamber, from the bottom to the top, a resistance heating type longitudinal evaporation source 18a,
A filament 20 for generating thermoelectrons and a mesh-shaped grid 22 for passing an evaporated substance are sequentially arranged at appropriate intervals. In addition, sandwiching these longitudinal evaporation sources 18a, etc.,
A pair of deposition barriers 30 are installed. Also, grid 2
A pair of guides having a predetermined concave shape are installed above the longitudinal evaporation source 18a, and both ends of the film substrate 32 are slid on the pair of guides. Therefore, the film substrate 32 has a longitudinal evaporation source 18 at a portion where both ends thereof are held by the pair of guides.
It has a predetermined concave shape with respect to a. However, since FIG. 9 is a cross-sectional view taken in the width direction of the film substrate 32, the concave shape of the film substrate 32 does not appear in this drawing.

Above the film substrate 32 in the concave portion held by the pair of guides, the counter electrode 46 having a predetermined concave shape with respect to the evaporation source 18 is formed in the same manner as the concave shape of the film substrate 32. Are installed to cover the entire film substrate 32 having the concave surface portion at a constant interval. Further, the potential of the counter electrode 46 is equal to the grid 2
The potential is also negative with respect to the potential of 2, and an electric field is generated from the grid 22 side to the counter electrode 46 side. The collimator 70 is arranged on the longitudinal evaporation source 18a in the width direction of the film substrate 32 to limit the flight range of the evaporation material evaporated from the longitudinal evaporation source 18a. There are features.

Next, the thin film formation by the film winding type thin film forming apparatus shown in FIG. 9 will be described. After the desired gas is introduced into the vacuum chamber and the pressure thereof is adjusted, the film substrate 32 starts to run. That is, the film substrate 3
2 is unrolled from the unwinder roll 34, and after moving along a pair of guides 38 having a predetermined concave shape,
It is wound up on a winder roll 36.

Further, when the vaporized substance evaporated from the longitudinal vaporization source 18a goes to the film substrate 32 having a concave shape which is held by the guide 38, a part of the vaporized substance is released from the filament 20 along the way. The partially ionized evaporative substances collide with electrons and are ionized, and the partially ionized vaporized substances also enter into a plasma state together with the ionized active gas. Fly to once. At this time, due to the action of the electric field from the grid 22 side toward the counter electrode 46 side, that is, toward the film substrate 32 side, the partially ionized evaporated substance that has passed through the grid 22 is accelerated toward the film substrate 32, It collides with 32 with high energy and adheres.

At this time, the collimator 70 is arranged on the longitudinal evaporation source 18a in the width direction of the film substrate 32 so as to limit the flight range of the evaporation material evaporated from the longitudinal evaporation source 18a. , Longitudinal evaporation source 18a
Evaporated substances from the film substrate 32 to the film substrate 32 are limited to those that collide with the film substrate 32 substantially vertically, as shown by the straight line arrows in the figure, and as shown by the broken line arrows in the figure,
It is excluded from those that obliquely collide with the other film substrates 32.

As described above, according to the film winding type thin film forming apparatus in the ninth embodiment, the collimator 7
0 is disposed on the longitudinal evaporation source 18a, and the film substrate 32
By limiting the flight range of the vaporized material so that the vaporized material impinges on the film substrate 32 from the longitudinal evaporation source 18a even when the evaporation source is the longitudinal evaporation source,
Since the distance to reach to is almost constant and the degree of reaction with the active gas is also constant, the composition of the thin film formed on the film substrate 32 can be kept within a desired range. Therefore, the same effect as in the case of the film winding type thin film forming apparatus according to the second embodiment can be obtained, and the uniformity of the film thickness and the film characteristics can be further improved as compared with that case. High-speed thin film formation and uniformity in the width direction of the film substrate 32 can be realized at the same time. Thus, conventionally, when a longitudinal evaporation source is used in order to make the film thickness distribution in the width direction uniform in a wide film substrate, as shown by a straight line and a dashed arrow in FIG.
Since the difference in the distance from the evaporation source to the film substrate reaches the evaporation material is large, the degree of progress of the reaction between the evaporation material and the introduced gas is different, and it is difficult to keep the film composition within the desired range. Can solve the problem.

Incidentally, in the film winding type thin film forming apparatus according to the ninth embodiment, the longitudinal evaporation source 18 is used.
Although the collimator 70 is arranged on a, the same effect can be obtained by forming the shape of the grid 22 into a collimator shape instead.

[0130]

As described above in detail, according to the thin film forming apparatus of the present invention, the evaporation material evaporated from the evaporation source is ionized by the thermoelectrons emitted from the filament, and has high energy electrically. As a result, in forming a reactive thin film or forming a thin film by crystallization, it is not necessary to apply thermal energy such as a reaction temperature or a crystallization temperature, and thus a low temperature thin film can be formed.

Further, since the active gas in the vacuum chamber is ionized by thermionic electrons from the filament, the evaporated substance can be ionized even under a high vacuum, so that the structure of the thin film formed on the surface of the film substrate is also In addition to making it extremely dense, by forming the thin film in a high vacuum, the incorporation of gas molecules into the thin film can be extremely reduced, so that a high-purity thin film can be obtained.

Further, the concave surface of the surface of the film substrate in the portion held by the film substrate holding means includes the surface having the same amount of particles of the evaporated substance evaporated from the evaporation source in at least a part thereof, thereby reaching the film substrate. Since the ratio of the evaporated substance to the active gas in the reaction space can be made uniform, the film thickness and film characteristics of the thin film formed on the film substrate can be made uniform.

Further, since the exposed area of the film substrate to the evaporation source, which can maintain the film thickness and film characteristics of the thin film in a desired range, can be widened, the thin film formation can be significantly speeded up. .

Further, by disposing the counter electrode having a negative potential with respect to the grid above the film substrate in the concave shape portion, or alternatively, the pair of guides as the film substrate holding means has a negative potential with respect to the grid. Since it has an electric potential, the ionized vaporized substance that has passed through the grid is accelerated by the action of the electric field from the grid side to the film substrate side, and it collides with the film substrate with high energy and adheres, so good adhesion is obtained. A thin film can be formed at high speed.

Further, as the film substrate holding means, rotation of a pair of discs, attached to a plurality of driving rollers--a pair of belts, a plurality of rollers, or a combination of a plurality of rollers and a plurality of tension setting rollers is used. By doing so, it is possible to prevent the occurrence of scratches and static electricity due to friction with the traveling film substrate, and to control the traveling speed of the film substrate to stably perform constant-speed traveling. It is possible to further improve the uniformity of the film thickness and the film characteristics in the running direction.

Further, since the film substrate can be cooled by using the film substrate cooling rollers as the plurality of rollers, it is possible to cope with the case where the film substrate needs to be cooled in forming the thin film. .

By disposing the discharge stabilization shield between the film substrate having a predetermined concave shape and the grid, the discharge is not affected by the potential of the film substrate, and thus the film thickness and film characteristics are uniform. It is possible to improve the property.

Further, the grid shape is a predetermined concave surface shape with respect to the evaporation source, and the extension of the normal line of the grid surface is the normal direction of the film substrate surface facing the predetermined concave surface shape with respect to the evaporation source. By making it overlap with the line, the direction of the electric field from the grid to the film substrate becomes perpendicular to the film substrate surface, and the partially ionized evaporated substance accelerated by this electric field collides perpendicularly with the film substrate surface.
It is possible to improve the uniformity of the orientation and crystallinity of the thin film, and thus improve the uniformity of film characteristics.

Further, a collimator is provided on the evaporation source,
By limiting the flight range of the evaporation material from the evaporation source in the width direction of the film substrate, the distance that the evaporation material reaches the film substrate from the evaporation source becomes almost constant, and the degree of progress of the reaction with the active gas is also constant. Therefore, the composition of the thin film formed on the film substrate can be kept within a desired range, and the uniformity of the film thickness and film characteristics can be improved. In particular, the speed of thin film formation and the film substrate can be improved. Uniformity in the width direction can be realized at the same time.

[Brief description of drawings]

FIG. 1A is a schematic cross-sectional view showing a film winding type thin film forming apparatus according to a first embodiment.
(B) is a side view showing the inside of the vacuum chamber.

FIG. 2 is a schematic cross-sectional view showing a film winding type thin film forming apparatus according to a second embodiment.

FIG. 3 (a) is a schematic sectional view showing the inside of a vacuum chamber of a film winding type thin film forming apparatus according to a third embodiment, and FIG. 3 (b) is a side view thereof.

FIG. 4 (a) is a schematic sectional view showing the inside of a vacuum chamber of a film winding type thin film forming apparatus according to a fourth embodiment, and FIG. 4 (b) is a side view thereof.

5 (a) is a schematic sectional view showing the inside of a vacuum chamber of a film winding type thin film forming apparatus according to a fifth embodiment, and FIG. 5 (b) is a side view thereof.

FIG. 6 is a schematic cross-sectional view showing the inside of a vacuum chamber of a film winding type thin film forming apparatus according to a sixth embodiment.

FIG. 7 (a) is a schematic sectional view showing the inside of a vacuum chamber of a film winding type thin film forming apparatus according to a seventh embodiment, and FIG. 7 (b) is a side view thereof.

FIG. 8 is a schematic sectional view showing a film winding type thin film forming apparatus according to an eighth embodiment.

FIG. 9 is a schematic cross-sectional view showing the inside of a vacuum chamber of a film winding type thin film forming apparatus according to a ninth embodiment.

[Explanation of symbols]

10 base plate 12 bell jar 14 vacuum tank 16 hole 18, 18a evaporation source filament 20, grid 22 20 filament 22, 22a grid 24a, 24b, 26a, 26b, 28 support / electrode 30 support wall 32 film substrate 34 unwinder roll 36 Winder roll 38 Guide 40 AC power supply 42, 44 DC power supply 46 Counter electrode 48 Supporting electrode 50 Disk 52a, 52b, ..., 52i, 54a, 54b Driving roller 56 Endless belt 58a, 58b, ..., 58g Roller 60 Protective coating Plates 62a, 62b, ..., 62g Film substrate cooling rollers 64a, 64b, ..., 64h Tension setting rollers 66 Protective plates 68 Discharge stabilizing shields 70 Collimators

Claims (15)

[Claims] 1. A vacuum tank into which an active gas, an inert gas, or a mixed gas of an active gas and an inert gas is introduced; an evaporation source installed in the vacuum tank to evaporate a predetermined evaporation material; In the vacuum chamber, a film substrate traveling means for traveling a film substrate, and in the vacuum chamber, the traveling film substrate surface is opposed to the evaporation source in a predetermined concave shape, and the concave surface of the film substrate surface is A film substrate holding unit including at least a part of a surface having an equal amount of particles of an evaporation substance evaporated from the evaporation source, the film substrate facing the evaporation source in a predetermined concave shape, and the evaporation source And a filament that generates thermoelectrons and is disposed between the film substrate and the filament that face the evaporation source in a predetermined concave shape. And a grid through which a predetermined evaporated substance evaporated from the evaporation source can pass, and the evaporation source, the filament, and a power supply unit that applies a predetermined voltage to the grid, In the state where the grid is at a positive potential, the vaporized substance evaporated from the vaporization source is
A thin film formation characterized by colliding with thermoelectrons emitted from the filament to be ionized, passing through the grid, and colliding with and adhering to the surface of the film substrate facing the evaporation source in a concave shape. apparatus. 2. The thin film forming apparatus according to claim 1, wherein a counter electrode is provided above the film substrate facing the evaporation source in a predetermined concave shape, and the counter electrode is the grid. A thin film forming apparatus characterized by having a negative potential with respect to. 3. The thin film forming apparatus according to claim 1, wherein the film substrate holding means is a pair of guides disposed above the grid and having a predetermined concave surface shape with respect to the evaporation source. Both ends of the film substrate are held on the pair of guides, the film substrate travels while sliding on the pair of guides, and the film substrate surface of the portion held on the pair of guides is the evaporation source. The thin film forming apparatus is characterized by facing a predetermined concave shape with respect to. 4. The thin film forming apparatus according to claim 3, wherein the pair of guides have a negative potential with respect to the grid. 5. The thin film forming apparatus according to claim 1, wherein the film substrate holding means is a rotatable-paired disc, and both ends of the film substrate are held on the pair of discs. While the film substrate travels with the rotation of the disk, the film substrate surface of the portion held on the pair of disks is opposed to the evaporation source in a predetermined concave shape, Thin film forming apparatus. 6. The thin film forming apparatus according to claim 1, wherein the film substrate holding means is a pair of belts attached to a plurality of drive rollers, and both ends of the film substrate are held on the pair of belts. And the film substrate travels with the rotation of the pair of belts due to the rotation of the plurality of drive rollers,
A thin film forming apparatus, wherein a portion of the film substrate surface held on the pair of belts faces a predetermined concave shape with respect to the evaporation source. 7. The thin film forming apparatus according to claim 1, wherein the film substrate holding means is a plurality of rollers arranged above the grid, and the film substrate is held on the plurality of rollers. The film substrate travels with the rotation of the roller, and the film substrate surface of the portion held on the plurality of rollers faces the evaporation source in a predetermined concave shape. Thin film forming apparatus. 8. The thin film forming apparatus according to claim 7, wherein the evaporation source side of each of the plurality of rollers prevents evaporation material from the evaporation source from adhering to the surfaces of the plurality of rollers. A thin film forming apparatus having a plurality of deposition preventing plates. 9. The thin film forming apparatus according to claim 1, wherein the film substrate holding means has a plurality of rollers arranged above the grid and a plurality of tension settings arranged at positions above the plurality of rollers. A plurality of rollers while the film substrate passes alternately through the plurality of rollers and the plurality of tension setting rollers one by one, and the tension of the film substrate is adjusted by the plurality of tension setting rollers. While the film substrate travels with the rotation of, the film substrate surface of the portion held on the plurality of rollers faces a predetermined concave shape with respect to the evaporation source. Thin film forming equipment. 10. The thin film forming apparatus according to claim 9, wherein the evaporation source side of each of the plurality of tension setting rollers comprises:
A thin film forming apparatus comprising a plurality of deposition preventing plates for preventing the evaporation material from the evaporation source from adhering to the surfaces of the plurality of tension setting rollers. 11. The thin film forming apparatus according to claim 7, wherein the plurality of rollers are film substrate cooling rollers in which a refrigerant is introduced into the rollers. apparatus. 12. The thin film forming apparatus according to claim 1, wherein discharge stabilization is performed between the grid and the film substrate facing the evaporation source in a predetermined concave shape. A thin film forming apparatus having a shield for use. 13. The thin film forming apparatus according to claim 1, wherein the grid has a predetermined concave surface shape with respect to the evaporation source, and a normal line of the grid surface extends. A thin film forming apparatus, wherein the thin film forming apparatus overlaps with a normal line of the film substrate surface facing a predetermined concave shape with respect to the evaporation source. 14. The thin film forming apparatus according to claim 1, wherein a collimator is provided on the evaporation source, and the collimator causes the evaporation substance from the evaporation source in the width direction of the film substrate. A thin film forming apparatus having a limited flight range. 15. The thin film forming apparatus according to claim 1, wherein a pair of deposition-inhibiting walls are provided with the evaporation source sandwiched therebetween, and the pair of deposition-inhibiting walls are provided to the evaporation source. The thin film forming apparatus is characterized in that the evaporation material from the evaporation source is prevented from adhering to the surface of the film substrate at a portion other than the film substrate facing the predetermined concave shape.