JPH09321328A - Manufacture of photoelectric converter - Google Patents
Manufacture of photoelectric converterInfo
- Publication number
- JPH09321328A JPH09321328A JP8139212A JP13921296A JPH09321328A JP H09321328 A JPH09321328 A JP H09321328A JP 8139212 A JP8139212 A JP 8139212A JP 13921296 A JP13921296 A JP 13921296A JP H09321328 A JPH09321328 A JP H09321328A
- Authority
- JP
- Japan
- Prior art keywords
- electrode layer
- electrode
- layer
- film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 63
- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 239000010408 film Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000010409 thin film Substances 0.000 claims abstract description 37
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 20
- 238000010248 power generation Methods 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 abstract description 5
- 238000010894 electron beam technology Methods 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 12
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光起電力装置等の
光電変換装置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a photoelectric conversion device such as a photovoltaic device.
【０００２】[0002]
【従来の技術】ポリイミド樹脂基板等の絶縁表面を有す
る基板上に、金属膜からなる第１電極層、アモルファス
シリコン層からなる半導体光活性層及び透明導電膜から
なる第２電極層を積層した光起電力装置が知られてい
る。この光起電力装置の製造方法は、基板上に第１電極
膜及び半導体光活性層を形成した後、この半導体光活性
層上に所望のパタ−ンの開穴部を設けた金属マスクを装
着し、基板を加熱しながら透明導電膜を形成して、第２
電極層をパタ−ニング形成していた。2. Description of the Related Art An optical device in which a first electrode layer made of a metal film, a semiconductor photoactive layer made of an amorphous silicon layer, and a second electrode layer made of a transparent conductive film are laminated on a substrate having an insulating surface such as a polyimide resin substrate. Electromotive devices are known. In this method of manufacturing a photovoltaic device, a first electrode film and a semiconductor photoactive layer are formed on a substrate, and then a metal mask is provided on the semiconductor photoactive layer, in which a desired pattern opening is provided. Then, the transparent conductive film is formed while heating the substrate, and the second
The electrode layer was patterned.
【０００３】[0003]
【発明が解決しようとする課題】以上の製造方法におい
ては、半導体光活性層が損傷を受け、特に、第２電極層
外周部の一部の下に、半導体光活性層を挟んで第１電極
層が位置する構造においては、上記損傷により、第１電
極層と第２電極層とが導通し、セルショ−トが発生して
いた。In the above manufacturing method, the semiconductor photoactive layer is damaged, and in particular, the semiconductor photoactive layer is sandwiched below a part of the outer periphery of the second electrode layer to form the first electrode. In the structure in which the layers are located, due to the above-mentioned damage, the first electrode layer and the second electrode layer are electrically connected to each other to cause cell short.
【０００４】本発明は、このような従来の欠点を解決す
るために成されたものであり、半導体光活性層の損傷を
防止し、セルショ−トの発生を防止する光起電力装置、
光電変換装置の製造方法を提供することを目的とする。The present invention has been made to solve the above-mentioned conventional drawbacks, and is a photovoltaic device which prevents damage to a semiconductor photoactive layer and prevents the occurrence of cell shots.
It is an object to provide a method for manufacturing a photoelectric conversion device.
【０００５】[0005]
【課題を解決するための手段】本発明の主要な構成は、
第２電極層の外周部の少なくとも一部の下に半導体光活
性層を挟んで第１電極層が位置する構造の光電変換装置
の製造方法であって、半導体光活性層上を含んで略全面
に、基板を加熱して第２電極層を構成する第２電極膜を
形成する工程と、第２電極膜上に第２導電層をパタ−ニ
ングするための金属薄膜を配置する工程と、金属薄膜を
マスクパターンとして、前記金属薄膜から露出する前記
第２電極膜をエッチング除去することにより、第２電極
層をパタ−ニングする工程とを備えることを特徴とす
る。The main constitution of the present invention is as follows.
A method for manufacturing a photoelectric conversion device having a structure in which a first electrode layer is located under at least a part of an outer peripheral portion of a second electrode layer with a semiconductor photoactive layer interposed between the first electrode layer and the semiconductor photoactive layer. A step of heating the substrate to form a second electrode film forming the second electrode layer, a step of disposing a metal thin film for patterning the second conductive layer on the second electrode film, Patterning the second electrode layer by etching away the second electrode film exposed from the metal thin film using the thin film as a mask pattern.
【０００６】[0006]
【実施例】以下に、本発明の第１〜５実施例を、図１〜
５を用いて詳細に説明する。EXAMPLES Examples 1 to 5 of the present invention will be described below with reference to FIGS.
5 will be described in detail.
【０００７】図１に、本発明の第１実施例である光電変
換装置を示す。図において、Ｘは後述する第１電極層、
半導体光活性層及び第２電極層の積層体からなる光電変
換素子が形成される光電変換領域である。１は、可撓性
を有するステンレスやアルミニウム等の金属シートとこ
の上に形成されたポリイミド等の絶縁樹脂膜からなる基
板、又は、ポリイミド等の樹脂からなるフィルムの基板
である。２は、光電変換領域Ｘに対応して、基板１上に
形成された第１電極層であり、厚さ約０．１〜１．０μ
ｍで、アルミニウム、チタン、ニッケル、銅等の金属膜
からなる。そして、この第１電極層２は、光電変換領域
Ｘから延出した出力端子部２ｔを有している。３は、第
１電極層２上に形成された半導体光活性層で、第１電極
層２側よりｎ型、ｉ型及びｐ型に順次積層形成されたア
モルファスシリコンからなり、約０．３〜１．０μｍの
厚さを有する。FIG. 1 shows a photoelectric conversion device according to a first embodiment of the present invention. In the figure, X is a first electrode layer described later,
It is a photoelectric conversion region in which a photoelectric conversion element formed of a laminated body of a semiconductor photoactive layer and a second electrode layer is formed. Reference numeral 1 is a substrate made of a flexible metal sheet such as stainless steel or aluminum and an insulating resin film such as polyimide formed thereon, or a film substrate made of a resin such as polyimide. 2 is a first electrode layer formed on the substrate 1 corresponding to the photoelectric conversion region X, and has a thickness of about 0.1 to 1.0 μm.
m is a metal film of aluminum, titanium, nickel, copper or the like. And this 1st electrode layer 2 has the output terminal part 2t extended from the photoelectric conversion area | region X. Reference numeral 3 denotes a semiconductor photoactive layer formed on the first electrode layer 2, which is made of amorphous silicon sequentially laminated in the n-type, i-type, and p-type from the first electrode layer 2 side, and has a thickness of about 0.3 to It has a thickness of 1.0 μm.
【０００８】４は、第１電極層２及び半導体光活性層３
より小面積に形成された第２電極層で、酸化亜鉛（Ｚｎ
Ｏ）、酸化インジウム錫（ＩＴＯ）、酸化錫（Ｓｎ
Ｏ2）等の透明導電膜からなり、約０．３〜１．０μｍ
の厚さを有する。５は、第２電極層４上に、これと同形
状に形成された金属薄膜であり、チタン、タングステ
ン、金、銀、白金又は鉛等の金属膜からなる。第１実施
例の場合、光が第２電極層４側より入射するために、こ
の金属薄膜５は、約１０〜２００Åの膜厚で、透光性を
有している。Reference numeral 4 denotes the first electrode layer 2 and the semiconductor photoactive layer 3.
The second electrode layer formed in a smaller area has a thickness of zinc oxide (Zn
O), indium tin oxide (ITO), tin oxide (Sn
Made of a transparent conductive film such as O 2 ), approximately 0.3 to 1.0 μm
Having a thickness of Reference numeral 5 denotes a metal thin film formed on the second electrode layer 4 in the same shape as the second electrode layer 4, and is made of a metal film of titanium, tungsten, gold, silver, platinum, lead, or the like. In the case of the first embodiment, since the light enters from the second electrode layer 4 side, the metal thin film 5 has a film thickness of about 10 to 200 Å and is transparent.
【０００９】次に、第２電極層４及び金属薄膜５の形成
方法について、詳細に説明する。半導体光活性層３を形
成の後、この上を含んで基板１の略全面に、エレクトロ
ンビーム法、スパッタ法等により、基板１を加熱（１５
０〜３００℃）しながら第２電極層４を構成する第２電
極膜を形成する。その後、基板１を加熱することなし
に、第２電極膜４上に金属マスクを用いて、エレクトロ
ンビーム法、抵抗加熱真空蒸着法等により、金属薄膜５
を形成する。そして、この金属薄膜５をマスクパターン
として、露出する第２電極膜をドライエッチングにて除
去することによって、第２電極層４をパタ−ニング形成
する。このドライエッチング方法は、ＣＨ 4＋Ｈ2、ＣＨ
3ＯＨ＋Ａｒ、ＨＢｒ、ＨＩ又はＨＣｌ等のガスを減圧
下にてグロ−放電させ、この中に基板を配置することに
より、露出する第２電極膜を除去する。以上の工程によ
り、第１実施例の光電変換装置が完成する。Next, the second electrode layer 4 and the metal thin film 5 are formed.
The method will be described in detail. Shape the semiconductor photoactive layer 3
After the formation, electroplating is performed on the substantially entire surface of the substrate 1 including the above.
The substrate 1 is heated (15
The second electrode that constitutes the second electrode layer 4 while
Form a polar membrane. After that, without heating the substrate 1
Then, using a metal mask on the second electrode film 4,
Metal thin film 5 by the electron beam method, resistance heating vacuum deposition method, etc.
To form Then, the metal thin film 5 is used as a mask pattern.
As a result, the exposed second electrode film is removed by dry etching.
By removing, the second electrode layer 4 is patterned.
I do. This dry etching method uses CH Four+ HTwo, CH
ThreeDecompress gas such as OH + Ar, HBr, HI or HCl
Glow discharge underneath and place the substrate in it
Then, the exposed second electrode film is removed. Through the above steps
Thus, the photoelectric conversion device of the first embodiment is completed.
【００１０】ここで、従来の製造方法において、金属マ
スクを用いて加熱しながら第２電極層を形成するとき、
半導体光活性層が損傷を受け、セルショ−トが発生しや
すい原因を究明した。その結果、以下の原因と考えられ
る。第２電極層を加熱しながら形成する際に、加熱され
た金属マスクが基板との熱膨張係数の差や熱歪みに基づ
いて膨張し、この膨張により金属マスクに被われる部分
の半導体光活性層がこすれて損傷を受ける。そして、金
属マスクのパターン開穴部の外周部（＝第２電極層パタ
ーンの外周部）にできた損傷部分には、第２電極層が堆
積することになるので、その下に位置する第１電極層と
導通し、セルショ−トが発生する。Here, in the conventional manufacturing method, when the second electrode layer is formed while heating using a metal mask,
The reason why the semiconductor photoactive layer is damaged and cell shot is likely to occur was investigated. As a result, the following causes are considered. When the second electrode layer is formed while being heated, the heated metal mask expands due to the difference in the coefficient of thermal expansion from the substrate and thermal strain, and this expansion causes the semiconductor photoactive layer in the portion covered by the metal mask. Scrape and damage. Then, since the second electrode layer is deposited on the damaged portion formed on the outer peripheral portion of the pattern opening portion of the metal mask (= the outer peripheral portion of the second electrode layer pattern), the first electrode positioned below the second electrode layer is deposited. It conducts with the electrode layer and a cell shot is generated.
【００１１】以上の説明の如く、第１実施例の製造方法
においては、半導体光活性層上に第２電極層を形成する
ために、第２電極層を構成する第２電極膜を基板上に略
全面に形成した後、金属薄膜を所望のパターンにて形成
し、この金属薄膜パターンをマスクとして、ドライエッ
チングにて不必要な部分の第２電極膜を除去している。
従って、従来のように、半導体光活性層上に金属マスク
を用いて第２電極膜を加熱しながら形成する場合に比べ
て、半導体光活性層の損傷が少なく、第２電極層の外周
部の下に半導体光活性層を挟んで第１導電層が位置して
も、セルショ−トが発生することが少ない。As described above, in the manufacturing method of the first embodiment, in order to form the second electrode layer on the semiconductor photoactive layer, the second electrode film forming the second electrode layer is formed on the substrate. After forming on almost the entire surface, a metal thin film is formed in a desired pattern, and using this metal thin film pattern as a mask, unnecessary portions of the second electrode film are removed by dry etching.
Therefore, as compared with the conventional case where the second electrode film is formed on the semiconductor photoactive layer while using the metal mask while heating, the semiconductor photoactive layer is less damaged and the outer peripheral portion of the second electrode layer is not damaged. Even if the first conductive layer is located below the semiconductor photoactive layer, cell shots are less likely to occur.
【００１２】尚、第１実施例においては、第２電極膜４
上に金属マスクを用いて金属薄膜５を形成しているが、
形成時に加熱していないことより金属マスクが熱膨張せ
ず、従って、下地の損傷が発生しない。In the first embodiment, the second electrode film 4
The metal thin film 5 is formed using a metal mask,
Since the metal mask is not heated at the time of formation, the metal mask does not thermally expand, and therefore, the base is not damaged.
【００１３】次に、本発明の第２実施例を、図２を用い
て説明する。第１実施例と同じ名称のものは、材質、製
造方法が同一なので、詳細な説明は省略する。Next, a second embodiment of the present invention will be described with reference to FIG. Since the materials having the same names as those in the first embodiment have the same material and manufacturing method, detailed description thereof will be omitted.
【００１４】図において、Ｘ１は後述する第１電極層、
半導体光活性層及び第２電極層の積層体からなる光電変
換素子が形成される光電変換領域である。１１は絶縁表
面を有する基板、１２は光電変換領域Ｘ１に対応して、
基板１１上に形成された第１電極層である。そして、こ
の第１電極層１２は、光電変換領域Ｘ１から延出した出
力端子部１２ｔを有している。１３は第１電極層１２上
に形成された半導体光活性層で、光電変換領域Ｘ１にお
いては、第１電極層１２より大面積に形成されている。In the figure, X1 is a first electrode layer described later,
It is a photoelectric conversion region in which a photoelectric conversion element formed of a laminated body of a semiconductor photoactive layer and a second electrode layer is formed. 11 is a substrate having an insulating surface, 12 is a photoelectric conversion region X1,
It is a first electrode layer formed on the substrate 11. Then, the first electrode layer 12 has an output terminal portion 12t extending from the photoelectric conversion region X1. Reference numeral 13 denotes a semiconductor photoactive layer formed on the first electrode layer 12, which has a larger area than the first electrode layer 12 in the photoelectric conversion region X1.
【００１５】１４は、光電変換領域Ｘ１において、第１
電極層１２より大面積に、半導体光活性層１３より小面
積に形成された第２電極層である。１５は、第２電極層
１４上に、これと同形状に形成された金属薄膜であり、
これら第２電極層１４、金属薄膜１５は、第１実施例に
開示した方法と同様な方法で形成される。Reference numeral 14 denotes a first photoelectric conversion region X1.
The second electrode layer has a larger area than the electrode layer 12 and a smaller area than the semiconductor photoactive layer 13. 15 is a metal thin film formed in the same shape as the second electrode layer 14 on the second electrode layer 14,
The second electrode layer 14 and the metal thin film 15 are formed by the same method as the method disclosed in the first embodiment.
【００１６】以上の説明の如く、第２実施例の製造方法
においては、従来のように、半導体光活性層上に金属マ
スクを用いて第２電極膜を加熱しながら形成する場合に
比べて、半導体光活性層の損傷が少なく、第２電極膜の
外周部の下に半導体光活性層を挟んで第１導電層が位置
する部分（図２中に、符号１６として示す）において、
セルショ−トが発生することが少ない。As described above, in the manufacturing method of the second embodiment, as compared with the conventional case where the second electrode film is formed on the semiconductor photoactive layer while heating with the use of the metal mask, In a portion (indicated by reference numeral 16 in FIG. 2) in which the semiconductor photoactive layer is less damaged and the first conductive layer is located below the outer peripheral portion of the second electrode film with the semiconductor photoactive layer interposed therebetween,
Cell shots rarely occur.
【００１７】次に、本発明の第３実施例を、図３を用い
て説明する。第１実施例と同じ名称のものは、材質、製
造方法が同一なので、詳細な説明は省略する。図におい
て、Ｘ２は後述する第１電極層、半導体光活性層及び第
２電極層の積層体からなる光電変換素子が形成される光
電変換領域である。２１は絶縁表面を有する基板、２２
は光電変換領域Ｘ２に対応して、基板２１上に形成され
た第１電極層である。そして、この第１電極層２２は、
光電変換領域Ｘ２から延出した第１端子部２２ｔを有し
ている。２３は、第１電極層２２上に形成された半導体
光活性層で、光電変換領域Ｘ２においては、第１電極層
２２より大面積に形成されている。Next, a third embodiment of the present invention will be described with reference to FIG. Since the materials having the same names as those in the first embodiment have the same material and manufacturing method, detailed description thereof will be omitted. In the figure, X2 is a photoelectric conversion region in which a photoelectric conversion element composed of a laminate of a first electrode layer, a semiconductor photoactive layer, and a second electrode layer described later is formed. 21 is a substrate having an insulating surface, 22
Is a first electrode layer formed on the substrate 21 corresponding to the photoelectric conversion region X2. Then, the first electrode layer 22 is
It has the first terminal portion 22t extending from the photoelectric conversion region X2. Reference numeral 23 denotes a semiconductor photoactive layer formed on the first electrode layer 22, and has a larger area than the first electrode layer 22 in the photoelectric conversion region X2.
【００１８】２４は、光電変換領域Ｘ２において、第１
電極層２２及び半導体光活性層２３より小面積に形成さ
れた第２電極層である。そして、この第２電極層２４
は、光電変換領域Ｘ２から延出した第２端子部２４ｔを
有している。２５は、第２電極層２４上に、これと同形
状に形成された金属薄膜であり、これら第２電極層２
４、金属薄膜２５は、第１実施例に開示した方法と同様
な方法で形成される。Numeral 24 denotes a first photoelectric conversion area X2 in the photoelectric conversion area X2.
The second electrode layer is formed in a smaller area than the electrode layer 22 and the semiconductor photoactive layer 23. Then, this second electrode layer 24
Has a second terminal portion 24t extending from the photoelectric conversion region X2. Reference numeral 25 denotes a metal thin film formed on the second electrode layer 24 in the same shape as the second electrode layer 24.
4. The metal thin film 25 is formed by the method similar to the method disclosed in the first embodiment.
【００１９】以上の説明の如く、第３実施例の製造方法
においては、従来のように、半導体光活性層上に金属マ
スクを用いて第２電極膜を加熱しながら形成する場合に
比べて、半導体光活性層の損傷が少なく、第２電極膜の
外周部の下に半導体光活性層を挟んで第１導電層が位置
しても、セルショ−トが発生することが少ない。As described above, in the manufacturing method of the third embodiment, as compared with the conventional case where the second electrode film is formed on the semiconductor photoactive layer while heating with a metal mask, The damage to the semiconductor photoactive layer is small, and even if the first conductive layer is located below the outer peripheral portion of the second electrode film with the semiconductor photoactive layer interposed therebetween, cell shots are less likely to occur.
【００２０】次に、本発明の第４実施例を、図４を用い
て説明する。第１実施例と同じ名称のものは、材質、製
造方法が同一なので、詳細な説明は省略する。図におい
て、Ｘ３は後述する第１電極層、半導体光活性層及び第
２電極層の積層体からなる光電変換素子が形成される光
電変換領域である。３１は絶縁表面を有する基板、３２
は光電変換領域Ｘ３に対応して、基板３１上に形成され
た第１電極層である。そして、この第１電極層３２は、
光電変換領域Ｘ３から延出した第１端子部３２ｔを有し
ている。３３は、第１電極層３２上に形成された半導体
光活性層で、光電変換領域Ｘ３においては、第１電極層
３２より大面積に形成されている。Next, a fourth embodiment of the present invention will be described with reference to FIG. Since the materials having the same names as those in the first embodiment have the same material and manufacturing method, detailed description thereof will be omitted. In the figure, X3 is a photoelectric conversion region in which a photoelectric conversion element composed of a laminate of a first electrode layer, a semiconductor photoactive layer, and a second electrode layer described later is formed. 31 is a substrate having an insulating surface, 32
Is a first electrode layer formed on the substrate 31 corresponding to the photoelectric conversion region X3. Then, the first electrode layer 32 is
It has the 1st terminal part 32t extended from photoelectric conversion field X3. Reference numeral 33 denotes a semiconductor photoactive layer formed on the first electrode layer 32, and has a larger area than the first electrode layer 32 in the photoelectric conversion region X3.
【００２１】３４は、光電変換領域Ｘ３において、第１
電極層３２より大面積に、半導体光活性層３３より小面
積に形成された第２電極層である。そして、この第２電
極層３４は、光電変換領域Ｘ３から延出した第２端子部
３４ｔを有している。３５は、第２電極層３４上に、こ
れと同形状に形成された金属薄膜であり、これら第２電
極層３４、金属薄膜３５は、第１実施例に開示したもの
と同様な方法で形成される。Reference numeral 34 denotes a first photoelectric conversion area X3 in the photoelectric conversion area X3.
The second electrode layer has a larger area than the electrode layer 32 and a smaller area than the semiconductor photoactive layer 33. Then, the second electrode layer 34 has a second terminal portion 34t extending from the photoelectric conversion region X3. Reference numeral 35 is a metal thin film formed on the second electrode layer 34 in the same shape as the second electrode layer 34. The second electrode layer 34 and the metal thin film 35 are formed by the same method as that disclosed in the first embodiment. To be done.
【００２２】以上の説明の如く、第４実施例の製造方法
においては、従来のように、半導体光活性層上に金属マ
スクを用いて第２電極膜を加熱しながら形成する場合に
比べて、半導体光活性層の損傷が少なく、第２電極層の
外周部の下に半導体光活性層を挟んで第１電極層が位置
する部分（図４中に、符号３６として示す）において、
セルショ−トが発生することが少ない。As described above, in the manufacturing method of the fourth embodiment, as compared with the conventional case where the second electrode film is formed on the semiconductor photoactive layer while heating with the use of the metal mask, In the portion where the semiconductor photoactive layer is less damaged and the first electrode layer is located below the outer peripheral portion of the second electrode layer with the semiconductor photoactive layer interposed (indicated by reference numeral 36 in FIG. 4),
Cell shots rarely occur.
【００２３】次に、本発明の第５実施例である光起電力
装置を、図５を用いて説明する。第１実施例と同じ名称
のものは、材質、製造方法が同一なので、詳細な説明は
省略する。この光起電力装置は、時計の文字盤として用
いて時計の電源として利用するもので、絶縁表面を有す
る基板４１の中心部には、時計の針の軸が通る開穴４１
Ｈが設けられている。Next, a photovoltaic device according to a fifth embodiment of the present invention will be described with reference to FIG. Since the materials having the same names as those in the first embodiment have the same material and manufacturing method, detailed description thereof will be omitted. This photovoltaic device is used as a timepiece power source by using it as a timepiece dial, and an opening 41 through which the axis of the timepiece hands passes is formed in the center of a substrate 41 having an insulating surface.
H is provided.
【００２４】図５において、Ａ〜Ｄは、後述する第１電
極層、半導体光活性層及び第２電極層の積層体で構成さ
れる発電領域である。In FIG. 5, A to D are power generation regions composed of a laminate of a first electrode layer, a semiconductor photoactive layer and a second electrode layer which will be described later.
【００２５】４２ａ〜４２ｄは、発電領域Ａ〜Ｄに対応
して分割配置された第１電極層である。これら第１電極
層４２ａ〜４２ｄは、各々中心角が略９０°の扇形の形
を有し、これらは相互の間に所定間隔を隔てて全体とし
て円形をなすように配置されている。更に、第１電極層
４２ａ〜４２ｃの各々は、これらに隣接する発電領域Ｂ
〜Ｄの外方に延在する接続部４２ａｅ、４２ｂｅ、４２
ｃｅを有し、また、第１電極層４２ｄは、発電領域Ｄか
ら外側に延出する出力延出部４２ｄｅを有している。そ
して、第１電極層４２ａの外側には、これと同一材料か
らなる島状出力部４２ａｔが形成されている。Reference numerals 42a to 42d denote first electrode layers divided and arranged corresponding to the power generation areas A to D, respectively. Each of the first electrode layers 42a to 42d has a fan shape with a central angle of about 90 °, and they are arranged at a predetermined interval from each other so as to form a circular shape as a whole. Further, each of the first electrode layers 42a to 42c has a power generation region B adjacent thereto.
To connecting portions 42ae, 42be, 42 extending outward
ce, and the first electrode layer 42d has an output extension 42de extending outward from the power generation region D. An island-shaped output portion 42at made of the same material as the first electrode layer 42a is formed outside the first electrode layer 42a.
【００２６】４３は、第１電極層４２ａ〜４２ｄ上に発
電領域毎に分割されることなく略円形に形成された半導
体光活性層である。Reference numeral 43 denotes a semiconductor photoactive layer formed on the first electrode layers 42a to 42d in a substantially circular shape without being divided for each power generation region.
【００２７】４４ａ〜４４ｄは、発電領域Ａ〜Ｄに対応
して、半導体光活性層４３上に形成された第２電極層で
ある。これら第２電極層４４ｂ〜４４ｄは、第１電極層
の接続部４２ａｅ、４２ｂｅ、４２ｃｅと重なり、電気
接続するための接続部４４ｂｅ、４４ｃｅ、４４ｄｅを
有し、発電領域Ａに形成された第２電極層４４ａは、こ
の領域の外側に延出して島状出力部４２ａｔ上に至る出
力端子４４ａｔを有している。更に、第１電極層４２ｄ
の出力延出部４２ｄｅ上には、第２電極層と同一材料か
らなる島状の出力端子４４ｄｔが形成されている。44a to 44d are second electrode layers formed on the semiconductor photoactive layer 43 corresponding to the power generation regions A to D. The second electrode layers 44b to 44d overlap the connection portions 42ae, 42be, 42ce of the first electrode layer and have connection portions 44be, 44ce, 44de for electrical connection, and are formed in the power generation region A. The electrode layer 44a has an output terminal 44at that extends to the outside of this region and reaches the island-shaped output portion 42at. Furthermore, the first electrode layer 42d
An island-shaped output terminal 44dt made of the same material as the second electrode layer is formed on the output extension portion 42de.
【００２８】４５ａ〜４５ｄは、第２電極層４４ａ〜４
４ｄ上に、これらと同形状に形成された金属薄膜であ
り、また、出力端子４４ｄｔ上にも、この金属薄膜と同
材料からなる端子部金属薄膜４５ｄｔが形成されてい
る。これら第２電極層４４ａ〜４４ｄ、金属薄膜４５ａ
〜４５ｄ、４５ｄｔは、第１実施例に開示した方法と同
様な方法で形成される。45a to 45d are second electrode layers 44a to 4d.
4d is a metal thin film formed in the same shape as these, and a terminal portion metal thin film 45dt made of the same material as this metal thin film is also formed on the output terminal 44dt. These second electrode layers 44a to 44d and metal thin film 45a
45d and 45dt are formed by a method similar to the method disclosed in the first embodiment.
【００２９】そして、第５実施例の光起電力装置の特性
向上を、従来例と比較する測定を行った。その結果を、
表１に示す。尚、第２電極層は、酸化インジウム錫（Ｉ
ＴＯ）材料を用いてエレクトロンビーム法を利用し、基
板温度２００℃でＯ2ガスを導入して、酸化インジウム
錫（ＩＴＯ）膜を形成した。また、酸化インジウム錫
（ＩＴＯ）膜のエッチングガスとしては、ＣＨ4＋Ｈ2を
使用し、金属薄膜としては、チタン６０Åを用いた。従
来プロセスにおいては、金属マスクを用いて、酸化イン
ジウム錫（ＩＴＯ）膜からなる第２電極層及びチタン６
０Åからなる金属薄膜を形成した。Then, measurement was carried out to compare the characteristics of the photovoltaic device of the fifth embodiment with those of the conventional example. The result is
It is shown in Table 1. The second electrode layer is formed of indium tin oxide (I
Using an electron beam method using a (TO) material, O 2 gas was introduced at a substrate temperature of 200 ° C. to form an indium tin oxide (ITO) film. CH 4 + H 2 was used as the etching gas for the indium tin oxide (ITO) film, and titanium 60Å was used as the metal thin film. In the conventional process, the second electrode layer made of an indium tin oxide (ITO) film and titanium 6 are formed using a metal mask.
A metal thin film of 0Å was formed.
【００３０】[0030]
【表１】 [Table 1]
【００３１】この結果から明らかな如く、本実施例にで
はセルショ−トの発生を抑制することができた。また、
フィルファクタ−に関しても、向上することが確認でき
た。従来プロセスにおけるフィルファクタ−の低下は、
以下の原因と考える。発電領域Ａ〜Ｄに渡って一体的に
被った半導体光活性層上に、金属マスクを用いて第２電
極層４４ａ〜４４ｄを分割形成するとき、加熱された金
属マスクが基板との熱膨張係数の差や熱歪みに基づいて
膨張し、たわんで、発電領域間を被う金属マスク部分
と、半導体光活性層表面との間にわずかな隙間ができ、
ここに第２電極材料が回り込み、隣接する発電領域間の
第２電極層間で導通し、フィルファクタ−が低下してい
る。As is clear from these results, the occurrence of cell shot could be suppressed in this example. Also,
It was confirmed that the fill factor also improved. The decrease of fill factor in the conventional process is
Consider the following causes. When the second electrode layers 44a to 44d are separately formed using the metal mask on the semiconductor photoactive layer integrally covered over the power generation regions A to D, the heated metal mask has a coefficient of thermal expansion with the substrate. Expands and flexes based on the difference in temperature and thermal strain, and a slight gap is created between the metal mask part covering the power generation region and the surface of the semiconductor photoactive layer,
The second electrode material wraps around here, is electrically connected between the second electrode layers between the adjacent power generation regions, and the fill factor is reduced.
【００３２】以上の説明の如く、第５実施例の製造方法
においては、従来のように、半導体光活性層上に金属マ
スクを用いて第２電極膜を加熱しながら分割形成する場
合に比べて、半導体光活性層の損傷が少なく、第２電極
層の外周部の下に半導体光活性層を挟んで第１電極層が
位置する部分においてセルショ−トが発生することが少
なく、加えて、フィルファクタ−も良好である。As described above, in the manufacturing method of the fifth embodiment, as compared with the conventional case where the second electrode film is divided and formed on the semiconductor photoactive layer while heating by using the metal mask. The semiconductor photoactive layer is less damaged, and cell shots are less likely to occur in a portion where the first electrode layer is located below the outer peripheral portion of the second electrode layer with the semiconductor photoactive layer interposed therebetween. The factor is also good.
【００３３】また、第１〜５実施例においては、第２電
極層に透明導電膜を用い、第２電極層側から光を入射さ
せているが、基板及び第１電極層を透光性として、基板
側より光を入射させてもよい。この場合、第２電極層
は、透明導電膜又は不透明な金属膜でもよい。金属膜の
場合は、半導体光活性層との密着力を高めるために、基
板を加熱して金属膜を全面形成し、次に金属薄膜を所望
のパターンにて形成し、この金属薄膜パターンをマスク
として、ドライエッチングにて不必要な部分の第２電極
膜を除去する。従って、第２電極層に透明導電層を用い
たときと同様な効果作用がある。Further, in the first to fifth embodiments, the transparent conductive film is used for the second electrode layer and the light is made incident from the second electrode layer side. However, the substrate and the first electrode layer are made transparent. Alternatively, the light may be incident from the substrate side. In this case, the second electrode layer may be a transparent conductive film or an opaque metal film. In the case of a metal film, in order to enhance the adhesion with the semiconductor photoactive layer, the substrate is heated to form a metal film over the entire surface, then a metal thin film is formed in a desired pattern, and this metal thin film pattern is used as a mask. Then, the unnecessary portion of the second electrode film is removed by dry etching. Therefore, there is the same effect as when the transparent conductive layer is used for the second electrode layer.
【００３４】[0034]
【発明の効果】本発明の製造方法は、以上の構成であ
り、従来のように、半導体光活性層上に金属マスクを用
いて第２電極膜を加熱しながら形成する場合に比べて、
半導体光活性層の損傷が少なく、第２電極層の外周部の
下に半導体光活性層を挟んで第１電極層が位置する部分
において、セルショ−トが発生することが少ない。The manufacturing method of the present invention has the above-mentioned structure, and is different from the conventional method in which the second electrode film is formed on the semiconductor photoactive layer while heating with a metal mask.
The semiconductor photoactive layer is less damaged, and cell shots are less likely to occur in the portion where the first electrode layer is located below the outer peripheral portion of the second electrode layer with the semiconductor photoactive layer interposed therebetween.
【図１】本発明の第１実施例である光電変換装置を示
し、（ａ）は平面図、（ｂ）は（ａ）におけるＡ−Ａ断
面図である。1A and 1B show a photoelectric conversion device according to a first embodiment of the present invention, in which FIG. 1A is a plan view and FIG. 1B is a sectional view taken along line AA in FIG.
【図２】本発明の第２実施例である光電変換装置を示
し、（ａ）は平面図、（ｂ）は（ａ）におけるＡ−Ａ断
面図である。2A and 2B show a photoelectric conversion device according to a second embodiment of the present invention, in which FIG. 2A is a plan view and FIG. 2B is a sectional view taken along line AA in FIG.
【図３】本発明の第３実施例である光電変換装置を示
し、（ａ）は平面図、（ｂ）は（ａ）におけるＡ−Ａ断
面図である。3A and 3B show a photoelectric conversion device according to a third embodiment of the present invention, in which FIG. 3A is a plan view and FIG. 3B is a sectional view taken along line AA in FIG.
【図４】本発明の第４実施例である光電変換装置を示
し、（ａ）は平面図、（ｂ）は（ａ）におけるＡ−Ａ断
面図である。4A and 4B show a photoelectric conversion device according to a fourth embodiment of the present invention, in which FIG. 4A is a plan view and FIG. 4B is a sectional view taken along line AA in FIG.
【図５】本発明の第５実施例である光電変換装置を示
し、（ａ）は平面図、（ｂ）は（ａ）におけるＸ−Ｘ断
面図である。5A and 5B show a photoelectric conversion device according to a fifth embodiment of the present invention, in which FIG. 5A is a plan view and FIG. 5B is a sectional view taken along line XX in FIG.
１、１１、２１、３１、４１ 基板 ２、１２、２２、３２、４２ａ〜４２ｄ 第１電極層 ３、１３、２３、３３、４３ 半導体光活性層 ４、１４、２４、３４、４４ａ〜４４ｄ 第２電極層 ５、１５、２５、３５、４５ａ〜４５ｄ 金属薄膜 1, 11, 21, 31, 41 Substrate 2, 12, 22, 32, 42a to 42d First electrode layer 3, 13, 23, 33, 43 Semiconductor photoactive layer 4, 14, 24, 34, 44a to 44d 2 electrode layers 5, 15, 25, 35, 45a to 45d Metal thin film
Claims (3)
第１電極層、半導体光活性層及び第２電極層を積層した
光電変換素子を複数個直列接続した光電変換装置の製造
方法であって、 前記絶縁表面に第１接続部を有する前記第１電極層を分
割配置する工程と、 前記第１電極層上に前記半導体光活性層を形成する工程
と、 前記半導体光活性層上を含んで前記絶縁表面の略全面
に、前記基板を加熱して前記第２電極層を構成する第２
電極膜を形成する工程と、 前記第２電極膜上に、隣接する前記発電領域の前記第１
電極膜の前記第１接続部と重なりあう第２接続部を有す
る前記第２電極層をパタ−ニングするための金属薄膜を
分割配置する工程と、 前記金属薄膜をマスクパターンとして、前記金属薄膜か
ら露出する前記第２電極膜をエッチング除去することに
より、前記第２電極層をパタ−ニングする工程とを備え
ることを特徴とする光起電力装置の製造方法。1. A power generation region on a substrate having an insulating surface,
It is a manufacturing method of a photoelectric conversion device in which a plurality of photoelectric conversion elements in which a first electrode layer, a semiconductor photoactive layer, and a second electrode layer are laminated are connected in series, wherein the first electrode has a first connection portion on the insulating surface. Dividing the layers, forming the semiconductor photoactive layer on the first electrode layer, heating the substrate to substantially the entire insulating surface including the semiconductor photoactive layer, and heating the substrate. Second constituting the second electrode layer
A step of forming an electrode film, and the first of the adjacent power generation regions on the second electrode film.
A step of separately disposing a metal thin film for patterning the second electrode layer having a second connection portion that overlaps the first connection portion of the electrode film, and using the metal thin film as a mask pattern from the metal thin film And a step of patterning the second electrode layer by etching away the exposed second electrode film.
に、第１電極層、半導体光活性層及び第２電極層を積層
した光電変換装置の製造方法であって、 前記絶縁表面に前記光電変換領域から延出した第１端子
部を有する前記第１電極層を配置する工程と、 前記第１電極層上に前記半導体光活性層を形成する工程
と、 前記半導体光活性層上を含んで前記絶縁表面の略全面
に、前記基板を加熱して前記第２電極層を構成する第２
電極膜を形成する工程と、 前記第２電極膜上に、前記光電変換領域から延出する第
２端子部を有する前記第２電極層をパタ−ニングするた
めの金属薄膜を配置する工程と、 前記金属薄膜をマスクパターンとして、前記金属薄膜か
ら露出する前記第２電極膜をエッチング除去することに
より、前記第２電極層をパタ−ニングする工程とを備え
ることを特徴とする光電変換装置の製造方法。2. A method for manufacturing a photoelectric conversion device in which a first electrode layer, a semiconductor photoactive layer, and a second electrode layer are laminated on a photoelectric conversion region on a substrate having an insulating surface, wherein the photoelectric conversion region is formed on the insulating surface. Including the step of disposing the first electrode layer having the first terminal portion extending from the conversion region, the step of forming the semiconductor photoactive layer on the first electrode layer, and the step of forming the semiconductor photoactive layer. A second electrode layer is formed by heating the substrate on substantially the entire insulating surface.
Forming an electrode film, arranging a metal thin film for patterning the second electrode layer having a second terminal portion extending from the photoelectric conversion region on the second electrode film, And a step of patterning the second electrode layer by etching away the second electrode film exposed from the metal thin film using the metal thin film as a mask pattern. Method.
層、半導体光活性層及び第２電極層を積層すると共に、
前記第２電極層の外周部の少なくとも一部の下に前記半
導体光活性層を挟んで前記第１電極層が位置する構造の
光電変換装置の製造方法であって、 前記絶縁表面に前記第１電極層を配置する工程と、 前記第１電極層上に前記半導体光活性層を形成する工程
と、 前記半導体光活性層上を含んで前記絶縁表面の略全面
に、前記基板を加熱して前記第２電極層を構成する第２
電極膜を形成する工程と、 前記第２電極膜上に、前記第２導電層をパタ−ニングす
るための金属薄膜を配置する工程と、 前記金属薄膜をマスクパターンとして、前記金属薄膜か
ら露出する前記第２電極膜をエッチング除去することに
より、前記第２電極層をパタ−ニングする工程とを備え
ることを特徴とする光電変換装置の製造方法。3. A first electrode layer, a semiconductor photoactive layer, and a second electrode layer are laminated on a substrate having an insulating surface, and
A method for manufacturing a photoelectric conversion device having a structure in which the first electrode layer is located under at least a part of an outer peripheral portion of the second electrode layer with the semiconductor photoactive layer interposed therebetween, wherein the first surface is provided on the insulating surface. Disposing an electrode layer, forming the semiconductor photoactive layer on the first electrode layer, heating the substrate to substantially the entire insulating surface including the semiconductor photoactive layer, and heating the substrate. Second constituting the second electrode layer
Forming an electrode film, arranging a metal thin film for patterning the second conductive layer on the second electrode film, and exposing the metal thin film as a mask pattern from the metal thin film And a step of patterning the second electrode layer by etching away the second electrode film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8139212A JPH09321328A (en) | 1996-05-31 | 1996-05-31 | Manufacture of photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8139212A JPH09321328A (en) | 1996-05-31 | 1996-05-31 | Manufacture of photoelectric converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09321328A true JPH09321328A (en) | 1997-12-12 |
Family
ID=15240140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8139212A Pending JPH09321328A (en) | 1996-05-31 | 1996-05-31 | Manufacture of photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09321328A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010157687A (en) * | 2008-12-29 | 2010-07-15 | Jusung Engineering Co Ltd | Thin film type solar cell and method of manufacturing the same |
| TWI502754B (en) * | 2009-04-24 | 2015-10-01 | Jusung Eng Co Ltd | Thin film type solar cell and manufacturing method thereof |
-
1996
- 1996-05-31 JP JP8139212A patent/JPH09321328A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010157687A (en) * | 2008-12-29 | 2010-07-15 | Jusung Engineering Co Ltd | Thin film type solar cell and method of manufacturing the same |
| TWI502754B (en) * | 2009-04-24 | 2015-10-01 | Jusung Eng Co Ltd | Thin film type solar cell and manufacturing method thereof |
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