JPH0933451A - Energy angle dispersion type total reflection X-ray analyzer - Google Patents
Energy angle dispersion type total reflection X-ray analyzerInfo
- Publication number
- JPH0933451A JPH0933451A JP7188775A JP18877595A JPH0933451A JP H0933451 A JPH0933451 A JP H0933451A JP 7188775 A JP7188775 A JP 7188775A JP 18877595 A JP18877595 A JP 18877595A JP H0933451 A JPH0933451 A JP H0933451A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- energy
- sample
- angle
- total reflection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
(57)【要約】
【構成】湾曲型ポリクロ結晶を用いたエネルギ角度分散
型で、X線反射率のエネルギ依存性を測定するX線吸収
微細構造測定装置である。試料ごとにX線反射率を最も
効率良く測定するためのX線入射角度を決定し、X線入
射角度を任意に設定可能である。また成膜装置を試料室
内に収め、成膜しながらの測定、解析が可能になり、基
板と薄膜との界面構造あるいは薄膜の構造について成膜
初期段階から連続的に検討することができる。
【効果】1〜数秒で高S/NなX線吸収微細構造の測定
が可能である。
(57) [Summary] [Structure] An X-ray absorption fine structure measuring apparatus for measuring energy dependence of X-ray reflectance, which is an energy angle dispersion type using a curved type polycrystal. It is possible to determine the X-ray incident angle for measuring the X-ray reflectance most efficiently for each sample and arbitrarily set the X-ray incident angle. Further, the film forming apparatus can be housed in the sample chamber, and measurement and analysis can be performed while forming a film, and the interface structure between the substrate and the thin film or the structure of the thin film can be continuously examined from the initial stage of film formation. [Effect] It is possible to measure a high S / N X-ray absorption fine structure in 1 to several seconds.
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体素子など電子装置
を構成する薄膜の原子レベルの構造を解析するためのX
線分析装置に係り、特に、基板上に形成された非晶質薄
膜の表面及び界面の構造を解析するために好適なX線吸
収微細構造測定装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray for analyzing the atomic level structure of a thin film constituting an electronic device such as a semiconductor element.
More particularly, the present invention relates to an X-ray absorption fine structure measuring apparatus suitable for analyzing the structure of the surface and interface of an amorphous thin film formed on a substrate.
【0002】[0002]
【従来の技術】従来の技術では、基板上に成膜した薄膜
試料のX線吸収微細スペクトルの測定を行う場合、例え
ば、X線吸収微細構造・XAFSの測定と解析、日本分
光学会測定法シリーズ26、138頁〜146頁に記載されて
いるように、分光結晶にモノクロ結晶を用いて白色X線
を単色化して試料に入射し、試料からの蛍光X線収率の
エネルギ依存性を計測する蛍光法によって行っていた。2. Description of the Related Art In the prior art, when the X-ray absorption fine spectrum of a thin film sample formed on a substrate is measured, for example, the measurement and analysis of X-ray absorption fine structure / XAFS, the Spectroscopy Society of Japan method series 26, pp. 138 to 146, a monochromatic crystal is used as a dispersive crystal to convert white X-rays into monochromatic light, which is then incident on a sample, and the energy dependence of the fluorescent X-ray yield from the sample is measured. It was done by the fluorescence method.
【0003】また例えばアプライド・クリスタログラフ
ィー誌第16巻220頁〜232頁(Journal ofApplied Crysta
llography 16, 220-232, 1983)に記載のあるR. P. Phi
zackerley他著の”シンクロトロン放射を用いたX線吸
収スペクトルの迅速測定のためのエネルギ分散分光計”
(An Energy-Dispersive Spectrometer for the Rapid
Measurement of X-ray Absorption Spectra Using Sync
hrotron Radiation.)では、X線源から出射した白色X
線を湾曲型ポリクロ結晶を用いることによってエネルギ
角度分散させ、エネルギ角度分散したX線を試料に焦点
をあわせて透過させ、この透過X線をX線フィルムある
いは位置敏感検出器によって計測することによってX線
吸収微細スペクトルの測定を行っていた。Further, for example, Applied Crystallography, Vol. 16, pages 220 to 232 (Journal of Applied Crysta
llography 16, 220-232, 1983)
Zackerley et al. "Energy dispersive spectrometer for rapid measurement of X-ray absorption spectra using synchrotron radiation".
(An Energy-Dispersive Spectrometer for the Rapid
Measurement of X-ray Absorption Spectra Using Sync
hrotron Radiation.), white X emitted from the X-ray source
X-rays are energy-dispersed by using a curved type polycrystal, X-rays with energy-angle dispersion are focused and transmitted to a sample, and the transmitted X-rays are measured by an X-ray film or a position-sensitive detector. The line absorption fine spectrum was measured.
【0004】[0004]
【発明が解決しようとする課題】例えばモノクロ結晶を
用いて白色X線を単色化して試料に入射し、基板上に成
膜した薄膜試料の蛍光X線収率のエネルギ依存性を計測
する蛍光X線吸収微細構造測定装置を用いた場合、高S
/Nな測定をするためには薄膜からの微弱な蛍光X線を
積算する必要があり、1エネルギあたりの測定時間は数
〜数十秒となる。従って、モノクロ結晶の走査点数と測
定時間を考慮すると1試料あたりの測定時間は、少なく
とも1〜2時間の測定が必要であった。Fluorescent X for measuring the energy dependence of the fluorescent X-ray yield of a thin film sample formed on a substrate by monochromatic white X-rays using a monochrome crystal and entering the sample. High S when using a line absorption fine structure measuring device
In order to measure / N, it is necessary to integrate the weak fluorescent X-rays from the thin film, and the measurement time per energy is several to several tens of seconds. Therefore, considering the number of scanning points of the monochrome crystal and the measurement time, the measurement time per sample needs to be at least 1 to 2 hours.
【0005】またエネルギ分散型のX線吸収微細構造測
定装置を用いれば、1試料あたり1〜数秒で測定が可能
であるが、X線を試料に透過させて測定するため、基板
上に成膜した薄膜試料の測定には適用できなかった。If an energy dispersive X-ray absorption fine structure measuring device is used, it is possible to measure in 1 to several seconds per sample. However, since the X-rays are transmitted through the sample for measurement, a film is formed on the substrate. It was not applicable to the measurement of thin film samples.
【0006】本発明の目的は、湾曲型ポリクロ結晶を用
いたエネルギ角度分散型のX線吸収微細構造測定装置で
ありながら、基板上の薄膜試料のX線吸収微細構造の高
速測定を可能とするX線分析装置を提供することにあ
る。It is an object of the present invention to enable high-speed measurement of the X-ray absorption fine structure of a thin film sample on a substrate, even though it is an energy angle dispersion type X-ray absorption fine structure measuring device using a curved polychrome crystal. An object is to provide an X-ray analyzer.
【0007】[0007]
【課題を解決するための手段】上記目的を達成するため
に本実施例のエネルギ分散型X線吸収微細構造測定装置
は、X線の全反射現象を利用し、その反射率のエネルギ
依存性を測定するX線吸収微細構造測定装置である。In order to achieve the above object, the energy dispersive X-ray absorption fine structure measuring apparatus of this embodiment utilizes the total reflection phenomenon of X-rays to determine the energy dependence of its reflectance. It is an X-ray absorption fine structure measuring device for measurement.
【0008】また、測定試料の種類に応じて、解析精度
が最も高くなるように、X線入射角度を自動的に決定す
る手段を設けるようにする。Further, a means for automatically determining the X-ray incident angle is provided so that the analysis accuracy is maximized according to the type of the measurement sample.
【0009】また、試料台をX線ビーム軸に対し傾斜す
る手段と、前記X線ビーム軸中心に回転移動できる手段
と、上下移動できる手段を設け、試料へのX線の入射角
度を任意に設定する機構を設けるようにする。Further, means for inclining the sample stage with respect to the X-ray beam axis, means for rotationally moving about the X-ray beam axis, and means for vertically moving are provided, and the incident angle of X-rays on the sample is arbitrarily set. Provide a mechanism to set.
【0010】さらに、前記試料台を成膜手段を有する容
器内に納め、必要に応じて薄膜試料を成膜する成膜装置
を備えている。Further, the apparatus is equipped with a film forming apparatus for accommodating the sample table in a container having a film forming means and forming a thin film sample as needed.
【0011】[0011]
【作用】湾曲型ポリクロ結晶を用いたエネルギ角度分散
型で、X線反射率のエネルギ依存性を測定するX線吸収
微細構造測定装置としたため、基板上に成膜した薄膜試
料であっても迅速な測定が可能で、蛍光法と同水準の高
精度な原子間距離等の構造パラメータの決定ができる。Since the energy angle dispersion type using the curved type polycrystal is used as the X-ray absorption fine structure measuring apparatus for measuring the energy dependence of the X-ray reflectance, even a thin film sample formed on the substrate can be quickly processed. It is possible to perform various measurements and to determine structural parameters such as interatomic distances with the same high precision as the fluorescence method.
【0012】さらに、成膜装置を試料室内に収めたた
め、成膜しながらの測定及び構造解析が可能になり、基
板と薄膜との界面構造あるいは薄膜の構造について成膜
初期段階から連続的に検討することができる。Further, since the film forming apparatus is housed in the sample chamber, measurement and structural analysis can be performed during film formation, and the interface structure between the substrate and the thin film or the structure of the thin film is continuously examined from the initial stage of film formation. can do.
【0013】[0013]
【実施例】以下、本発明の実施例を図面を用いて具体的
に説明する。Embodiments of the present invention will be specifically described below with reference to the drawings.
【0014】図1は本発明装置の一実施例となるエネル
ギ角度分散型全反射X線分析装置の概要を示す側面図で
ある。X線源11より発生する白色X線12はスリット
13によって整形し、全反射ミラー14によって測定に
不要な高エネルギX線を除去し、湾曲型ポリクロ結晶1
5に入射する。湾曲型ポリクロ結晶でエネルギ角度分散
させたX線16を散乱X線除去用のスリット17を通過
させ、試料18上に焦点をあわせて試料台19の上に固
定した試料に入射させる。試料台19は上下移動及び入
射X線ビーム軸を中心とした回転ができるようになって
いて、入射X線に対する入射角を変化させるために傾斜
させることができるようになっている。試料からのエネ
ルギ角度反射X線110は散乱X線除去用スリット11
1を通過させた後、例えば、フォトダイオードアレイの
ような一次元検出器112によってX線強度を計測す
る。検出器112の入射窓を充分大きく取っておけば、
検出器112を動かさなくても試料18で反射したX線
110を測定できる。試料室113と検出器112は測
定条件に応じて、装置架台上をX線ビーム水平方向ある
いは垂直方向に移動することができる。FIG. 1 is a side view showing an outline of an energy angle dispersion type total reflection X-ray analysis apparatus as an embodiment of the apparatus of the present invention. White X-rays 12 generated from the X-ray source 11 are shaped by a slit 13, high-energy X-rays unnecessary for measurement are removed by a total reflection mirror 14, and the curved polychromatic crystal 1
5 is incident. The X-rays 16 whose energy angle is dispersed by the curved polychromatic crystal pass through the slits 17 for removing scattered X-rays, and are focused on the sample 18 to be incident on the sample fixed on the sample table 19. The sample stage 19 can be moved up and down and rotated about the incident X-ray beam axis, and can be tilted to change the incident angle with respect to the incident X-ray. Energy angle reflected X-rays 110 from the sample are scattered X-ray removal slits 11.
After passing 1, the X-ray intensity is measured by a one-dimensional detector 112 such as a photodiode array. If the entrance window of the detector 112 is set large enough,
The X-ray 110 reflected by the sample 18 can be measured without moving the detector 112. The sample chamber 113 and the detector 112 can be moved in the horizontal direction or the vertical direction of the X-ray beam on the apparatus mount according to the measurement conditions.
【0015】また図には示していないが試料室内部には
例えばスパッタリング、CVD等の成膜手段を有し、成
膜しながらの測定、あるいは試料表面を削りながらの測
定が可能である。Although not shown in the drawing, a film forming means such as sputtering or CVD is provided inside the sample chamber to enable measurement while forming a film or measurement while scraping the sample surface.
【0016】図2は本発明装置の湾曲型ポリクロ結晶を
用いたエネルギ角度分散型X線吸収微細構造測定装置の
原理を示す図である。広いエネルギ成分を持つ入射X線
21の中から、特定の波長λ(nm)あるいはエネルギ
−E(eV)の光子のみを選択し単色化するためには、
Braggの法則として知られる数1または数2に従っ
て分光結晶の回折角(θ)を設定する。ここで、dは分
光結晶の回折面の面間隔(nm)である。FIG. 2 is a diagram showing the principle of the energy angle dispersion type X-ray absorption fine structure measuring apparatus using the curved type polycrystal of the apparatus of the present invention. In order to select only the photons having a specific wavelength λ (nm) or energy −E (eV) from the incident X-rays 21 having a wide energy component to make them monochromatic,
The diffraction angle (θ) of the dispersive crystal is set according to Formula 1 or Formula 2 known as Bragg's law. Here, d is the surface spacing (nm) of the diffraction surface of the dispersive crystal.
【0017】[0017]
【数1】 [Equation 1]
【0018】[0018]
【数2】 [Equation 2]
【0019】本実施例の様に分光結晶を湾曲型ポリクロ
結晶とすると分光結晶へ入射する入射X線21の位置に
よって回折角(θ)22は異なる。回折角の異なる、あ
るいは異なるエネルギを持つX線を測定試料上で収束さ
せると、X線は再び任意の角度で分散し検出器23に到
達する。従って、一次元検出器を用いて検出器の各チャ
ンネルのX線強度を測定することによって、一度に広い
エネルギ範囲のX線吸収微細構造のスペクトルの測定が
できる。数3は湾曲型ポリクロ結晶の回折角(θ)と検
出器のチャンネル(n)との関係を示したものである。When the dispersive crystal is a curved polycrystal as in this embodiment, the diffraction angle (θ) 22 differs depending on the position of the incident X-ray 21 incident on the dispersive crystal. When X-rays having different diffraction angles or different energies are converged on the measurement sample, the X-rays are dispersed again at an arbitrary angle and reach the detector 23. Therefore, by measuring the X-ray intensity of each channel of the detector using the one-dimensional detector, the spectrum of the X-ray absorption fine structure in a wide energy range can be measured at one time. Equation 3 shows the relationship between the diffraction angle (θ) of the curved polycrystal and the channel (n) of the detector.
【0020】[0020]
【数3】 (Equation 3)
【0021】ただし、θBは湾曲型ポリクロ結晶の中心
位置での回折角、Lは検出器の受光部の水平幅、lは試
料上の焦点から検出器までの距離、Nは検出器の総チャ
ンネル数である。ここでまた一次元検出器を用いなくて
も、例えばシンチレーションカウンタ検出器の受光面の
前にスリットを設け、受光面の前を一定の速度でスリッ
トを走査することで、疑似的な一次元検出器としたもの
を用いてもよい。Where θB is the diffraction angle at the central position of the curved polycrystal, L is the horizontal width of the light receiving portion of the detector, l is the distance from the focus on the sample to the detector, and N is the total channel of the detector. Is a number. Even without using a one-dimensional detector here, for example, a slit is provided in front of the light-receiving surface of the scintillation counter detector, and the slit is scanned at a constant speed in front of the light-receiving surface to perform pseudo one-dimensional detection. You may use a container.
【0022】また目的のエネルギ帯域に応じて分光ポリ
クロ結晶の交換が可能である。本実施例ではSi(31
1)湾曲型ポリクロ結晶を使用しているが、目的のエネ
ルギ帯域に応じて例えばSi(111)他の湾曲型ポリ
クロ結晶、あるいは多層反射膜等を使用しても良い。Further, it is possible to replace the spectral polycrystal according to the target energy band. In this embodiment, Si (31
1) Although a curved polycrystal is used, a curved polycrystal such as Si (111) or a multilayer reflective film may be used depending on the intended energy band.
【0023】X線吸収微細構造のスペクトルの質に直接
関係する、エネルギ分解能は、光源となるX線の発散角
(数4)、検出器の空間分解能(数5)、それぞれのポ
リクロ結晶が持つ固有の角度分解能(数6)に依存す
る。The energy resolution, which is directly related to the quality of the spectrum of the X-ray absorption fine structure, has the divergence angle of the X-ray as a light source (Equation 4), the spatial resolution of the detector (Equation 5), and each polycrystal. It depends on the intrinsic angular resolution (Equation 6).
【0024】[0024]
【数4】 (Equation 4)
【0025】[0025]
【数5】 (Equation 5)
【0026】[0026]
【数6】 (Equation 6)
【0027】[0027]
【数7】 (Equation 7)
【0028】なお総合的なエネルギ分解能は数7に従っ
て決定される。ここでpはX線源と結晶間の距離、qは
結晶と試料上の焦点との距離、dは試料上の焦点と検出
器の距離、Rは湾曲型結晶の曲率半径、ΔSはX線ビー
ムの幅を示す。The total energy resolution is determined according to equation (7). Where p is the distance between the X-ray source and the crystal, q is the distance between the crystal and the focus on the sample, d is the distance between the focus on the sample and the detector, R is the radius of curvature of the curved crystal, and ΔS is the X-ray. Indicates the width of the beam.
【0029】図3は種々の測定条件でのエネルギ分解能
の変化を示したものである。FIG. 3 shows changes in energy resolution under various measurement conditions.
【0030】次にX線の反射率を測定することによって
得られる吸収微細構造の原理について簡単に説明する。The principle of the absorption fine structure obtained by measuring the X-ray reflectance will be briefly described below.
【0031】X線の反射率による吸収微細構造では試料
表面に含まれる原子の吸収端より高エネルギ側でX線の
異常分散による振動が生じる。この振動構造がX線吸収
微細構造にあたる情報を含んでいる。In the absorption fine structure based on the reflectance of X-rays, vibration occurs due to anomalous dispersion of X-rays on the higher energy side than the absorption edge of atoms contained in the sample surface. This vibrating structure contains information corresponding to the X-ray absorption fine structure.
【0032】ここで試料の複素屈折率nは数8、数9、
数10で表すことができる。なおδは屈折率の実部を、
βは屈折率の虚部を、μは線吸収係数を、λは波長を示
す。Here, the complex refractive index n of the sample is given by
It can be expressed by Equation 10. Where δ is the real part of the refractive index,
β is the imaginary part of the refractive index, μ is the linear absorption coefficient, and λ is the wavelength.
【0033】[0033]
【数8】 (Equation 8)
【0034】[0034]
【数9】 [Equation 9]
【0035】[0035]
【数10】 (Equation 10)
【0036】この時、反射率(R)はフレネルの公式か
ら数11で与えられる。At this time, the reflectance (R) is given by the formula 11 from the Fresnel's formula.
【0037】ここで入射角をφ、全反射臨界角をφcと
し、X=φ/φc、Y=B/δとおいてX<<1とする
と、数11は近似的に数12のようにあらわすことがで
きる。Here, assuming that the incident angle is φ, the critical angle for total reflection is φc, and X << 1 with X = φ / φc and Y = B / δ, Equation 11 is approximately represented as Equation 12. be able to.
【0038】[0038]
【数11】 [Equation 11]
【0039】[0039]
【数12】 (Equation 12)
【0040】数12をもとにβについて求めると数13
のように表される。When β is calculated based on the equation 12, the equation 13 is obtained.
It is represented as
【0041】[0041]
【数13】 (Equation 13)
【0042】すなわち、Rはβとδの関数になるが、こ
の時のδは入射光の波長あるいはエネルギに対して単調
に変化する。つまり振動構造には寄与しないと仮定する
と、Rの振動構造はβの振動構造で与えられる。That is, R is a function of β and δ, and δ at this time changes monotonically with respect to the wavelength or energy of incident light. That is, assuming that it does not contribute to the vibration structure, the R vibration structure is given by the β vibration structure.
【0043】そこで、数10と数13の関係から、数1
4のように表されるμの振動構造からX線吸収微細構造
を求めることとした。Therefore, from the relationship between the equations 10 and 13, the equation 1
It was decided to determine the X-ray absorption fine structure from the vibrating structure of μ represented by the formula (4).
【0044】[0044]
【数14】 [Equation 14]
【0045】この様に実際に測定する反射率Rから透過
法や蛍光法と同様な方法でX線吸収微細構造の振動を抽
出し、原子間距離などの構造パラメータを求めることが
できる。In this way, the vibration of the X-ray absorption fine structure can be extracted from the actually measured reflectance R by a method similar to the transmission method or the fluorescence method, and the structural parameter such as the interatomic distance can be obtained.
【0046】次に本実施例を用いたX線入射角度の設定
は以下の手順によって行った。Next, the setting of the X-ray incident angle according to this embodiment was performed by the following procedure.
【0047】(1)試料へのX線入射角度を0.1〜
0.3度に設定し測定試料のX線吸収端エネルギを決定
する。(1) The X-ray incident angle to the sample is 0.1 to
The X-ray absorption edge energy of the measurement sample is determined by setting it to 0.3 degree.
【0048】(2)X線吸収端エネルギよりも高エネル
ギ側(〜100eV)における反射率のX線入射角度依
存性を計測するため、試料台を一定の例えば0.01度
ステップで0度〜1度程度までスキャンし、反射率曲線
を求める。(2) In order to measure the dependency of the reflectance on the X-ray incident angle on the higher energy side (up to 100 eV) than the X-ray absorption edge energy, the sample stage is fixed at, for example, 0 degree to 0.01 degree step. The reflectance curve is obtained by scanning up to about 1 degree.
【0049】(3)得られた反射率曲線から反射率が
0.5となる角度を全反射臨界角とする。(3) From the obtained reflectance curve, the angle at which the reflectance is 0.5 is the critical angle for total reflection.
【0050】(4)全反射臨界角より小さい角度で反射
率が0.6〜0.8になる角度を全反射角とし試料台を
設定する。(4) The sample stage is set with the total reflection angle being the angle at which the reflectance is 0.6 to 0.8 at an angle smaller than the total reflection critical angle.
【0051】以上のX線入射角度設定は、本実施例の測
定装置に設けられたコンピュータによって自動設定して
いる。このX線入射角度設定は、測定の前に一度設定し
ておけばよく、試料を変更しないかぎり、再設定の必要
はない。The above X-ray incident angle setting is automatically set by the computer provided in the measuring apparatus of this embodiment. This X-ray incident angle setting may be set once before the measurement, and does not need to be reset unless the sample is changed.
【0052】次に本実施例を用いて測定した、基板上に
成膜したPb(Zr,Ti)O3薄膜試料のX線吸収微
細構造のスペクトルの例を図4に示す。測定エネルギ範
囲は12.98〜13.44keVとして、測定時間は
1秒とした。図5にX線吸収微細構造スペクトルから得た
動径分布関数を示す。0.25nm,0.28nm,0.32nmのピークは
Pb(Zr,Ti)O3のPb−O距離と一致する。図6
は動径分布関数を数値解析したPbの第一近接原子間距
離であるPb−O距離を示す。また2時間かけて測定し
た蛍光法の値も同時に示す。Next, an example of the spectrum of the X-ray absorption fine structure of the Pb (Zr, Ti) O 3 thin film sample formed on the substrate, which was measured by using this example, is shown in FIG. The measurement energy range is 12.98 to 13.44 keV, and the measurement time is
1 second. Figure 5 shows the radial distribution function obtained from the X-ray absorption fine structure spectrum. The peaks at 0.25 nm, 0.28 nm, and 0.32 nm coincide with the Pb-O distance of Pb (Zr, Ti) O 3 . Figure 6
Indicates the Pb-O distance, which is the distance between the first adjacent atoms of Pb obtained by numerical analysis of the radial distribution function. Moreover, the value of the fluorescence method measured over 2 hours is also shown at the same time.
【0053】上記の結果より、本実施例によるエネルギ
角度分散型全反射X線分析装置を用いてX線吸収微細構
造を測定した場合、数100〜数1000分の1の測定
時間で蛍光法と同等の解析結果が得られることがわかっ
た。From the above results, when the X-ray absorption fine structure was measured using the energy angle dispersion type total reflection X-ray analysis apparatus according to this example, the fluorescence method was used in the measurement time of several hundred to several thousandths. It was found that equivalent analysis results were obtained.
【0054】[0054]
【発明の効果】湾曲型ポリクロ結晶を用いたエネルギ角
度分散型で、X線反射率のエネルギ依存性を測定するX
線吸収微細構造測定装置としたため、基板上に成膜した
薄膜試料であっても蛍光法の数100〜数1000分の
1の測定時間で、蛍光法と同水準の高精度な原子間距離
等の構造パラメータの決定ができる。EFFECT OF THE INVENTION An energy angle dispersion type using a curved type polycrystal, which measures the energy dependence of X-ray reflectance X
Since it is a linear absorption fine structure measuring device, even a thin film sample formed on a substrate can be measured at a measurement time of several hundreds to several thousandths of that of the fluorescence method, and the highly accurate interatomic distance, etc. of the same level as the fluorescence method. The structural parameters of can be determined.
【0055】さらに、成膜装置を試料室内に収めたた
め、成膜しながらの測定及び構造解析が可能になり、基
板と薄膜との界面構造あるいは薄膜の構造について成膜
初期段階から連続的に検討することができる。Further, since the film forming apparatus is housed in the sample chamber, measurement and structural analysis can be performed during film formation, and the interface structure between the substrate and the thin film or the structure of the thin film is continuously examined from the initial stage of film formation. can do.
【図1】本発明の実施例であるエネルギ角度分散型全反
射X線分析装置の概要を示す側面図。FIG. 1 is a side view showing an outline of an energy angle dispersion type total reflection X-ray analysis apparatus which is an embodiment of the present invention.
【図2】本発明の実施例である湾曲型ポリクロ結晶を用
いたエネルギ角度分散型X線吸収微細構造測定装置の原
理を示す説明図。FIG. 2 is an explanatory view showing the principle of an energy angle dispersion type X-ray absorption fine structure measuring apparatus using a curved polychrome crystal which is an example of the present invention.
【図3】本発明の実施例である種々の測定条件でのエネ
ルギ分解能の変化を示した説明図。FIG. 3 is an explanatory diagram showing changes in energy resolution under various measurement conditions that are examples of the present invention.
【図4】本発明の実施例である基板上に成膜したPb
(Zr,Ti)O3薄膜試料のX線吸収微細構造のスペ
クトルの特性図。FIG. 4 is a Pb film formed on a substrate according to an embodiment of the present invention.
(Zr, Ti) characteristic diagram of the spectrum of the X-ray absorption fine structure of the O 3 thin film sample.
【図5】本発明の実施例である基板上に成膜したPb
(Zr,Ti)O3薄膜試料のX線吸収微細構造スペク
トルから得た動径分布関数を示す特性図。FIG. 5 is a Pb film formed on a substrate according to an embodiment of the present invention.
FIG. 4 is a characteristic diagram showing a radial distribution function obtained from an X-ray absorption fine structure spectrum of a (Zr, Ti) O 3 thin film sample.
【図6】本発明の実施例である基板上に成膜したPb
(Zr,Ti)O3薄膜試料の動径分布関数を数値解析
したPbの第一近接原子間距離であるPb−O距離を示
す説明図。FIG. 6 is a Pb film formed on a substrate which is an example of the present invention.
(Zr, Ti) O 3 explanatory view showing a Pb-O distance is first closest interatomic distance of Pb with a radial distribution function and numerical analysis of the thin film sample.
11…X線源、 12…白色X線、 13…スリット、 14…全反射ミラー、 15…湾曲型ポリクロ結晶、 16…エネルギ角度分散X線、 17…スリット、 18…試料、 19…試料台、 110…反射X線、 111…スリット、 112…一次元検出器。 11 ... X-ray source, 12 ... White X-ray, 13 ... Slit, 14 ... Total reflection mirror, 15 ... Curved polychromatic crystal, 16 ... Energy angle dispersion X-ray, 17 ... Slit, 18 ... Sample, 19 ... Sample stand, 110 ... Reflected X-ray, 111 ... Slit, 112 ... One-dimensional detector.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 末永 和文 神奈川県横浜市戸塚区吉田町292番地株式 会社日立製作所生産技術研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazufumi Suenaga 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Ltd.
Claims (4)
に入射させ、エネルギ角度分散させたX線を試料上に焦
点をあわせて入射し、前記試料からのエネルギ角度分散
したX線を、X線検出器で計測するエネルギ角度分散型
X線吸収微細構造測定装置において、前記試料への入射
X線を所定の角度で入射させ、試料台上の測定試料から
の反射X線を計測することにより、X線反射率のエネル
ギ依存性によってX線吸収微細構造を測定することを特
徴とするエネルギ角度分散型全反射X線分析装置。1. X-rays from an X-ray source, which are incident on a curved polychromatic crystal, are energy-angle-dispersed, are focused on a sample, and are energy-angle-dispersed. In an energy angle dispersion type X-ray absorption fine structure measuring apparatus for measuring with an X-ray detector, incident X-rays on the sample are made incident at a predetermined angle, and reflected X-rays from the measurement sample on the sample stage are measured. By doing so, the energy angle dispersion type total reflection X-ray analysis apparatus is characterized in that the X-ray absorption fine structure is measured by the energy dependence of the X-ray reflectance.
応じて、解析精度が最も高くなるように、X線入射角度
を自動的に決定する手段を設けているエネルギ角度分散
型全反射X線分析装置。2. The energy-angle-dispersed total reflection X according to claim 1, wherein means for automatically determining an X-ray incident angle is provided so that analysis accuracy is maximized according to the type of the measurement sample. Line analyzer.
ム軸に対し傾斜する手段と、前記X線ビーム軸中心に回
転移動できる手段と、上下移動できる手段を設け、試料
へのX線の入射角度を任意に設定する機構を設けている
エネルギ角度分散型全反射X線分析装置。3. An X-ray to a sample according to claim 1, further comprising: a means for inclining the sample stage with respect to the X-ray beam axis, a means for rotationally moving about the X-ray beam axis, and a means for vertically moving. Energy dispersion type total reflection X-ray analysis apparatus provided with a mechanism for arbitrarily setting the incident angle of.
を有する容器内に納め、必要に応じて薄膜試料を成膜す
る成膜装置を備えたエネルギ角度分散型全反射X線分析
装置。4. The energy-angle-dispersion total reflection X-ray analysis apparatus according to claim 1, further comprising a film forming device for accommodating the sample stage in a container having a film forming means, and forming a thin film sample as needed. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7188775A JPH0933451A (en) | 1995-07-25 | 1995-07-25 | Energy angle dispersion type total reflection X-ray analyzer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7188775A JPH0933451A (en) | 1995-07-25 | 1995-07-25 | Energy angle dispersion type total reflection X-ray analyzer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0933451A true JPH0933451A (en) | 1997-02-07 |
Family
ID=16229575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7188775A Pending JPH0933451A (en) | 1995-07-25 | 1995-07-25 | Energy angle dispersion type total reflection X-ray analyzer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0933451A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002031523A (en) * | 2000-05-10 | 2002-01-31 | Rigaku Corp | Thin film measuring device, thin film measuring method, and thin film forming system |
| JP2006266829A (en) * | 2005-03-23 | 2006-10-05 | Daihatsu Motor Co Ltd | X-ray absorption fine structure analysis method and analyzer |
| US7209542B2 (en) | 2004-12-14 | 2007-04-24 | Korea Basic Science Institute | Simultaneous measurement of the reflectivity of X-ray with different orders of reflections and apparatus for measurement thereof |
| JP2008170236A (en) * | 2007-01-10 | 2008-07-24 | High Energy Accelerator Research Organization | X-ray and neutron beam reflectivity curve measuring method and measuring apparatus |
-
1995
- 1995-07-25 JP JP7188775A patent/JPH0933451A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002031523A (en) * | 2000-05-10 | 2002-01-31 | Rigaku Corp | Thin film measuring device, thin film measuring method, and thin film forming system |
| US7209542B2 (en) | 2004-12-14 | 2007-04-24 | Korea Basic Science Institute | Simultaneous measurement of the reflectivity of X-ray with different orders of reflections and apparatus for measurement thereof |
| JP2006266829A (en) * | 2005-03-23 | 2006-10-05 | Daihatsu Motor Co Ltd | X-ray absorption fine structure analysis method and analyzer |
| JP2008170236A (en) * | 2007-01-10 | 2008-07-24 | High Energy Accelerator Research Organization | X-ray and neutron beam reflectivity curve measuring method and measuring apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH08184572A (en) | Total reflection X-ray analyzer | |
| US7120228B2 (en) | Combined X-ray reflectometer and diffractometer | |
| US8731138B2 (en) | High-resolution X-ray diffraction measurement with enhanced sensitivity | |
| US7076024B2 (en) | X-ray apparatus with dual monochromators | |
| US5132997A (en) | X-ray spectroscopic analyzing apparatus | |
| US7600916B2 (en) | Target alignment for X-ray scattering measurements | |
| US7068753B2 (en) | Enhancement of X-ray reflectometry by measurement of diffuse reflections | |
| US20110064199A1 (en) | Crystallite size analysis method and apparatus using powder x-ray diffraction | |
| JP2001124711A (en) | X-ray fluorescence analysis method and sample structure evaluation method | |
| JP2000065536A (en) | Method and apparatus for measuring film thickness and optical constant | |
| JPH08128971A (en) | Exafs measuring device | |
| JP3968350B2 (en) | X-ray diffraction apparatus and method | |
| JPH0933451A (en) | Energy angle dispersion type total reflection X-ray analyzer | |
| JP2005140777A (en) | Sample inspection method, apparatus thereof, cluster tool for manufacturing microelectronic devices, apparatus for manufacturing microelectronic devices | |
| EP0697109B1 (en) | X-ray spectrometer with a grazing take-off angle | |
| JPH05196583A (en) | Total reflection X-ray analyzer | |
| JP2592931B2 (en) | X-ray fluorescence analyzer | |
| JPH0798285A (en) | X-ray evaluation device | |
| EP4624911A1 (en) | A tool for analysing the chemical composition and structure of nanolayers | |
| JPH06160312A (en) | X-ray evaluation apparatus | |
| JP3217871B2 (en) | X-ray analyzer and total reflection X-ray fluorescence analyzer | |
| JP2002116159A (en) | X-ray structure analyzer for thin-film process | |
| RU2128820C1 (en) | Process of timely test of roughness of supersmooth large- sized surfaces by method of x-ray scanning and device for its implementation | |
| JPH01244344A (en) | Apparatus for measuring x-ray absorbing spectrum | |
| JPH10260030A (en) | Non-destructive thin film thickness / mass measuring method and non-destructive thin film thickness / mass measuring device |