JPH0936178A - Integrated circuit package, manufacturing method thereof, and pad layout conversion method - Google Patents
Integrated circuit package, manufacturing method thereof, and pad layout conversion methodInfo
- Publication number
- JPH0936178A JPH0936178A JP7200398A JP20039895A JPH0936178A JP H0936178 A JPH0936178 A JP H0936178A JP 7200398 A JP7200398 A JP 7200398A JP 20039895 A JP20039895 A JP 20039895A JP H0936178 A JPH0936178 A JP H0936178A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- integrated circuit
- array
- anisotropic conductive
- conductive sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Wire Bonding (AREA)
Abstract
(57)【要約】
【課題】 集積回路チップのパッケ−ジングにおいて、
熱圧着という簡単なプロセスで“アレイパッド型で小型
の集積回路パッケ−ジ”を作製すること。
【解決手段】 集積回路チップのパッケ−ジングにおい
て、加圧した方向にのみ導電性を示す導電性粒子含有の
異方性導電シ−ト10であって、その片面にアレイ配線14
を設けたものを用い、チップ11のデバイス面13と、上記
異方性導電シ−ト10のアレイ配線14を施してない面とを
仮付けした後(工程A)、熱圧着してチップ11の周辺電
極パッド12と、異方性導電シ−ト10のアレイ配線14とを
導通させる(工程B)。次に、上記アレイ配線14上のア
レイ電極パッド16にバンプ17を形成し、モ−ルド樹脂18
により樹脂封止する(工程C)。
(57) [Abstract] [Problem] In packaging integrated circuit chips,
"Array pad type small integrated circuit package" is manufactured by a simple process called thermocompression bonding. In packaging of an integrated circuit chip, there is provided an anisotropic conductive sheet (10) containing conductive particles showing conductivity only in a pressure direction, and an array wiring (14) is provided on one side thereof.
After the device surface 13 of the chip 11 and the surface of the anisotropic conductive sheet 10 on which the array wiring 14 is not formed are temporarily attached (step A), the chip 11 is subjected to thermocompression bonding. The peripheral electrode pad 12 and the array wiring 14 of the anisotropic conductive sheet 10 are electrically connected (step B). Next, a bump 17 is formed on the array electrode pad 16 on the array wiring 14 and a mold resin 18 is formed.
The resin is sealed with (step C).
Description
【0001】[0001]
【本発明の属する技術分野】本発明は、集積回路用パッ
ケ−ジ及びその製造方法並びにパッド配置の変換方法に
関する。特に、本発明は、パッド配置をアレイ状に変換
した集積回路用パッケ−ジであって、スル−ホ−ルを開
ける必要がなく、しかも、熱圧着という簡単なプロセス
で「アレイパッド型のチップに近いサイズの集積回路用
パッケ−ジ」とすることができる該パッケ−ジ及びその
製造方法に関し、また、集積回路チップのパッケ−ジン
グにおいて、特に電極パッド配置を変換する方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for an integrated circuit, a method for manufacturing the same, and a method for converting a pad arrangement. In particular, the present invention is a package for an integrated circuit in which the pad arrangement is converted into an array, and it is not necessary to open a through hole, and moreover, an "array pad type chip is formed by a simple process of thermocompression bonding. The present invention relates to a package which can be a package for an integrated circuit having a size close to the above, and a method for manufacturing the same, and particularly relates to a method for converting an electrode pad arrangement in packaging an integrated circuit chip.
【0002】[0002]
【従来の技術】集積回路チップの高集積化や多ピン化が
進むと、周辺に電極端子を持つパッケ−ジの場合には、
サイズが大きくなり、また、このサイズを小さくするた
めに電極端子ピッチを狭くすると、基板のパタ−ン形成
が複雑になり、実装も難しくなる。2. Description of the Related Art As the degree of integration and the number of pins of integrated circuit chips have increased, in the case of packages having electrode terminals on the periphery,
If the electrode terminal pitch is narrowed to reduce the size, the pattern formation of the board becomes complicated and the mounting becomes difficult.
【0003】そのため、電極端子数の多いパッケ−ジの
場合には、配線基板に電極パッドがアレイ状となるよう
に配線を施し、該基板の底面にピンをアレイ状に設けた
ピングリッドアレイ(以下“PGA”と略記する)や半田
ボ−ルを基板底面にアレイ状に設けたボ−ルグリッドア
レイ(以下“BGA”と略記する)が使われることが多
い。これらの方法を用いると、パッケ−ジサイズを小さ
くすることが可能であり、また、電極端子のピツチも狭
くしなくて良いので、実装も容易にできる利点を有す
る。Therefore, in the case of a package having a large number of electrode terminals, a wiring is provided on the wiring board so that the electrode pads are arranged in an array, and a pin grid array (where pins are provided in an array on the bottom surface of the board). A ball grid array (hereinafter abbreviated as "BGA") in which an array of solder balls is provided on the bottom surface of the substrate is often used. By using these methods, the package size can be reduced, and the pitch of the electrode terminals does not have to be narrowed, so that there is an advantage that the mounting can be facilitated.
【0004】従来のPGAは、図5に示すように、セラ
ミック等からなる配線基板50の表面に電極パッド53(チ
ップ51の周辺電極パッド52と接続される配線基板50側の
電極パッド53)が、アレイ状の電極パッド配置に変換で
きるように配線を施し、この配線基板50にスル−ホ−ル
55を開け、底面に2.54mm間隔でアレイ状にピン56を設
ける。そして、キャビティ54部にチップ51を搭載し、ワ
イヤ−ボンディングにより配線基板50との電気的接続を
行い、キャップ57により封止する構造のものである。As shown in FIG. 5, a conventional PGA has electrode pads 53 (electrode pads 53 on the wiring board 50 side connected to the peripheral electrode pads 52 of the chip 51) on the surface of the wiring board 50 made of ceramic or the like. , Wiring is arranged so that it can be converted into an array-shaped electrode pad arrangement, and the wiring board 50 is provided with through holes.
55 is opened, and pins 56 are provided on the bottom face in an array at 2.54 mm intervals. The chip 51 is mounted in the cavity 54, electrically connected to the wiring board 50 by wire bonding, and sealed by the cap 57.
【0005】上記図5に示したPGAは、“キャビティ
アップタイプ”と呼ばれるものであり、このタイプのも
のでは、ピン56を配線基板50の底面全面にわたって配置
することができるので、より小型にしやすい利点をもつ
が、放熱性に劣るという欠点を有する。The PGA shown in FIG. 5 is called a "cavity-up type". In this type, the pins 56 can be arranged over the entire bottom surface of the wiring board 50, so that the PGA can be made smaller easily. Although it has an advantage, it has a drawback that heat dissipation is poor.
【0006】これに対して、図6に示す“キャビティダ
ウンタイプ”の場合、配線基板60の底面側からチップ61
を搭載するため、ピン66を配線基板60の底面全面に配置
することができないので、前記した“キャビティアップ
タイプ”のものほど小型化は望めないが、放熱性に優れ
た構造となっている。なお、図6において、62はチップ
61の周辺電極パッド、63は配線基板60側の電極パッド、
64はキャビティ、67はキャップである。On the other hand, in the case of the "cavity down type" shown in FIG. 6, the chip 61 is inserted from the bottom side of the wiring board 60.
Since the pins 66 cannot be arranged on the entire bottom surface of the wiring board 60 because of the mounting, the miniaturization cannot be expected as compared with the above-mentioned "cavity-up type", but the structure has excellent heat dissipation. In FIG. 6, 62 is a chip
61 peripheral electrode pads, 63 electrode pads on the wiring board 60 side,
64 is a cavity and 67 is a cap.
【0007】ところで、配線基板材料として、TABテ
−プやプリント配線基板を用いたものも従来から知られ
ているが、これらの基本的な構造は、前掲の図5あるい
は図6と同様である。なお、PGAのマザ−ボ−ドへの
実装は、ピン56,66を電極パッド部に挿入して半田付け
を行うか、あるいは、ソケット等を使用することにより
行われている。By the way, although a material using a TAB tape or a printed wiring board has been conventionally known as a wiring board material, the basic structure thereof is the same as that shown in FIG. 5 or FIG. . The PGA is mounted on the mother board by inserting the pins 56 and 66 into the electrode pads and soldering them, or by using a socket or the like.
【0008】次に、従来のBGAについて図7を参照し
て説明すると、これは、図7に示すように、セラミック
等からなる配線基板70に、前記した従来のPGAと同様
アレイ状の電極パッド配置に変換するように配線を施
し、この配線基板70にスル−ホ−ル75を開け、底面にア
レイ状の半田ボ−ル78を設ける。そして、チップ71は、
フリップチップ、ワイヤ−ボンディング、TABなどに
より配線基板70に電気的に接続し、キャップ77により封
止する構造のものである。なお、図7において、72はチ
ップ71の周辺電極パッド、73は配線基板70側の電極パッ
ドである。Next, a conventional BGA will be described with reference to FIG. 7. This is as shown in FIG. 7, in which a wiring board 70 made of ceramic or the like is provided with an array of electrode pads similar to the conventional PGA. Wiring is provided so as to be converted into an arrangement, a through hole 75 is opened in the wiring board 70, and an array-shaped solder ball 78 is provided on the bottom surface. And the chip 71 is
The structure is such that it is electrically connected to the wiring board 70 by flip chip, wire bonding, TAB, etc., and sealed by a cap 77. In FIG. 7, 72 is a peripheral electrode pad of the chip 71, and 73 is an electrode pad on the wiring board 70 side.
【0009】上記BGAのマザ−ボ−ドへの実装は、B
GAの半田ボ−ル78とマザ−ボ−ドの電極パッドとを位
置合わせし、半田ボ−ル78を溶融させて接続する。この
ため、BGAは、前記したPGAよりも基板への実装が
容易であり、高歩留まりが得られ易く、低コスト化も可
能となる利点を有している。The BGA is mounted on the mother board by the B
The solder ball 78 of the GA and the electrode pad of the mother board are aligned with each other, and the solder ball 78 is melted and connected. Therefore, BGA has the advantages that it can be mounted on a substrate more easily than PGA described above, a high yield can be easily obtained, and cost reduction can be achieved.
【0010】[0010]
【発明が解決しようとする課題】従来の電極パッド配置
の変換方法では、図5〜7にみられるように、チップを
配線基板に搭載する領域(チップ領域)の外側にも配線を
施しているため、パッケ−ジサイズは、チップサイズよ
りも大きくなるという欠点を有している。また、図5,
7にみられるように、配線基板に多数のスル−ホ−ルを
開けなければならないため、作業工程が多く複雑とな
り、その結果、コストが増加するという問題が生じる。In the conventional electrode pad layout conversion method, as shown in FIGS. 5 to 7, wiring is also provided outside the area where the chip is mounted on the wiring board (chip area). Therefore, the package size has a drawback that it is larger than the chip size. Also, FIG.
As shown in No. 7, since a large number of through holes have to be opened in the wiring board, the number of working steps becomes complicated, resulting in a problem of increased cost.
【0011】ところで、高密度化が求められている現状
において、できるだけチップサイズに近いパッケ−ジサ
イズのものが今日強く要望されており、また、作業工程
が少なく容易に制作できる集積回路用パッケ−ジの出現
が強く要望されている。In the present situation where high density is demanded, there is a strong demand today for a package size as close to the chip size as possible, and a package for an integrated circuit which has few working steps and can be easily manufactured. The appearance of is strongly demanded.
【0012】本発明は、上記要望に沿う集積回路用パッ
ケ−ジを提供することを技術的課題とし、詳細には、前
記従来技術の有する欠点、問題点を解消し、特にスル−
ホ−ルを開ける必要がなく、しかも、熱圧着という簡単
なプロセスで「アレイパッド型のチップに近いサイズの
集積回路パッケ−ジ」とすることができる“パッド配置
をアレイ状に変換した集積回路用パッケ−ジ”及びその
製造方法を提供することを技術的課題とする。また、本
発明は、パッド配置をアレイ状に変換することができる
パッド配置の変換方法を提供することを技術的課題とす
る。SUMMARY OF THE INVENTION The present invention has a technical object of providing a package for an integrated circuit which meets the above-mentioned demands, and more specifically, solves the drawbacks and problems of the prior art, and particularly
An integrated circuit with a pad arrangement converted to an array, which does not require opening of a hole and can be made into an "integrated circuit package of a size close to an array pad type chip" by a simple process of thermocompression bonding. It is a technical object to provide a package for use in a package and a method for manufacturing the same. Another object of the present invention is to provide a pad layout conversion method capable of converting a pad layout into an array.
【0013】[0013]
【課題を解決するための手段】本発明に係る電極パッド
配置の変換手段としては、チップと同程度のサイズの異
方性導電シ−トに、チップの周辺電極パッドと接続され
る配線基板側の電極パッドが、アレイ状の電極パッド配
置に変換できるように配線を施していることを特徴とす
る。また、配線を施した異方性導電シ−トをチップに熱
圧着することにより、チップの電極パッドと異方性導電
シ−トの底面部の電極パッドと電気的接続を行っている
ことを特徴とする。As means for converting the arrangement of electrode pads according to the present invention, an anisotropic conductive sheet having a size similar to that of a chip is connected to a peripheral board of the chip on a wiring board side. The electrode pad is wired so that it can be converted into an array-shaped electrode pad arrangement. Further, the anisotropic conductive sheet with wiring is thermocompression bonded to the chip to electrically connect the electrode pad of the chip and the electrode pad on the bottom surface of the anisotropic conductive sheet. Characterize.
【0014】即ち、本発明に係る集積回路用パッケ−ジ
は、「導電性粒子含有樹脂シ−トであって、該樹脂シ−
トを加圧した方向にのみ導電性を示す異方性導電シ−ト
を用い、熱圧着によりチップの電極パッドと前記異方性
導電シ−ト面に設けられているアレイ配線とを導通さ
せ、樹脂封止してなることを特徴とする集積回路用パッ
ケ−ジ。」(請求項1)を要旨とする。That is, the package for an integrated circuit according to the present invention is "a conductive sheet containing conductive particles.
An anisotropic conductive sheet that exhibits conductivity only in the direction in which it is pressed is used, and the electrode pads of the chip are electrically connected to the array wiring provided on the anisotropic conductive sheet surface by thermocompression bonding. A package for an integrated circuit, characterized by being sealed with resin. (Claim 1) is the gist.
【0015】また、本発明に係る集積回路用パッケ−ジ
の製造方法は、「(1) 表面にアレイ配線を設けた導電性
粒子含有の異方性導電シ−ト面と、チップのデバイス面
とを位置合わせし、仮付けする工程、(2) 前記異方性導
電シ−トを熱圧着させ、チップの電極パッドと異方性導
電シ−トのアレイ配線とを導通させる工程、(3) モ−ル
ド樹脂を充填する工程、を含むことを特徴とする集積回
路用パッケ−ジの製造方法。」(請求項2)を要旨とす
る。Further, the method of manufacturing a package for an integrated circuit according to the present invention is described in "(1) Anisotropic conductive sheet surface containing conductive particles having array wiring provided on the surface and a device surface of a chip. And (2) thermocompression-bonding the anisotropic conductive sheet to electrically connect the electrode pad of the chip and the array wiring of the anisotropic conductive sheet, (3) ) A method of manufacturing a package for an integrated circuit, including a step of filling a mold resin. "(Claim 2).
【0016】さらに、本発明に係るパッド配置の変換方
法は、「集積回路チップのパッド配置を変換する方法に
おいて、導電性粒子含有樹脂シ−トであって、該シ−ト
を加圧した方向にのみ導電性を示す異方性導電シ−トを
用い、パッド配置をアレイ状に変換することを特徴とす
るパッド配置の変換方法。」(請求項3)を要旨とし、こ
の方法を用いてパッド配置をアレイ状に変換した集積回
路用パッケ−ジの構造並びに該集積回路用パッケ−ジを
用いた実装方法を要旨とする。Further, the pad arrangement conversion method according to the present invention is, "In the method for converting the pad arrangement of an integrated circuit chip, the conductive particle-containing resin sheet is pressed in the direction in which the sheet is pressed. A method for converting a pad arrangement, which comprises converting the pad arrangement into an array by using an anisotropic conductive sheet exhibiting conductivity only in "." (Claim 3). The gist is a structure of an integrated circuit package in which the pad arrangement is converted into an array and a mounting method using the integrated circuit package.
【0017】[0017]
【発明の実施の形態】本発明で使用する異方性導電シ−
トについて、図4を参照して詳細に説明する。なお、図
4は、本発明で使用する異方性導電シ−トの一例を示す
図であって、(A)はその平面図であり、(B)は(A)のa
−a線断面図である。BEST MODE FOR CARRYING OUT THE INVENTION Anisotropic conductive sheet used in the present invention.
This will be described in detail with reference to FIG. FIG. 4 is a diagram showing an example of the anisotropic conductive sheet used in the present invention, (A) is a plan view thereof, and (B) is a of (A).
FIG.
【0018】図4に示す異方性導電シ−ト10は、樹脂31
から成るシ−ト中に直径5〜10μm程度の導電性粒子32
が分散した構造からなり、該シ−ト10にある一定以上の
圧力を加えた場合、この圧力を加えた領域において、圧
力を加えた方向にのみ導電性を示すシ−ト10である。上
記導電性粒子32としては、Au等の導電性粒子から成る
ものや樹脂製ボ−ルの表面にNi、Au等の導電性材料
が蒸着ないしはメッキなどにより形成されているものを
使用することができる。The anisotropic conductive sheet 10 shown in FIG.
Conductive particles 32 with a diameter of about 5-10 μm in a sheet composed of
When the sheet 10 is applied with a certain pressure or more, the sheet 10 is electrically conductive only in the direction in which the pressure is applied in the area where the pressure is applied. As the conductive particles 32, it is possible to use particles made of conductive particles such as Au or those in which a conductive material such as Ni or Au is formed on the surface of a resin ball by vapor deposition or plating. it can.
【0019】また、本発明で使用する異方性導電シ−ト
10のシ−ト厚としては、約50μm程度が好ましい。そし
て、本発明では、該シ−ト10をチップに熱圧着して接着
させるものであるが、接着後では、約50μm程度のシ−
ト厚が導電性粒子31の粒径程度又はそれ以下の厚さとな
り、その結果、前記したとおり、圧力を加えた方向にの
み導電性を示すものである。なお、本発明で使用する異
方性導電シ−トとしては、上記した導電性粒子(その材
料や粒子径を含む)やシ−ト厚に限定されるものではな
く、「圧力を加えた方向にのみ導電性を示すもの」であ
る限り適宜変更できるものである。The anisotropic conductive sheet used in the present invention is also used.
The sheet thickness of 10 is preferably about 50 μm. In the present invention, the sheet 10 is bonded to the chip by thermocompression bonding, but after the bonding, a sheet of about 50 μm is formed.
The thickness of the conductive particles 31 is equal to or smaller than the particle diameter of the conductive particles 31, and as a result, as described above, conductivity is exhibited only in the direction in which pressure is applied. The anisotropic conductive sheet used in the present invention is not limited to the above-mentioned conductive particles (including its material and particle diameter) and the sheet thickness, but "the direction in which pressure is applied". It is possible to appropriately change it as long as it has conductivity only.
【0020】[0020]
【実施例】次に、本発明の実施例を挙げ、本発明を具体
的に説明するが、本発明は、以下の実施例によって限定
されるものではなく、前記した本発明の要旨の範囲内で
種々の変更が可能である。EXAMPLES Next, the present invention will be specifically described with reference to examples of the present invention, but the present invention is not limited to the following examples and is within the scope of the gist of the present invention. Various changes are possible with.
【0021】(実施例1)図1は、本発明の一実施例
(実施例1)を示す集積回路用パッケ−ジの断面図であ
る。本実施例1の集積回路用パッケ−ジは、該図に示す
ように、異方性導電シ−ト10、チップ11、該チップ11の
周辺電極パッド12、アレイ配線14、アレイ電極パッド1
6、バンプ17、モ−ルド樹脂18からなる。(Embodiment 1) FIG. 1 shows an embodiment of the present invention.
FIG. 3 is a cross-sectional view of a package for an integrated circuit showing (Example 1). As shown in the figure, the package for an integrated circuit of the first embodiment has an anisotropic conductive sheet 10, a chip 11, a peripheral electrode pad 12 of the chip 11, an array wiring 14, and an array electrode pad 1.
6, consisting of bumps 17 and mold resin 18.
【0022】この集積回路用パッケ−ジの製造法を図2
に基づいて説明する。なお、図2は、図1に示した集積
回路用パッケ−ジの工程A〜Cからなる製造工程順断面
図である。FIG. 2 shows a method of manufacturing the package for the integrated circuit.
It will be described based on. 2A to 2C are cross-sectional views in order of the manufacturing steps including steps A to C of the package for the integrated circuit shown in FIG.
【0023】まず、前記図4に示した約50μm厚の異方
性導電シ−ト10を使用し、この表面15(片面)にアレイ配
線14を施した異方性導電シ−ト10(図2工程A参照)を準
備する。また、周辺部にのみ電極パッド12が設けられて
いるチップ11(図2工程A参照)を準備する。なお、この
電極パッド12には、無電解メッキ法などを用いてNi,
Cu等のバンプを設けておいても良い。First, the anisotropic conductive sheet 10 having a thickness of about 50 .mu.m shown in FIG. 4 is used, and the anisotropic conductive sheet 10 (FIG. 2 Step A) is prepared. Further, a chip 11 (see step A in FIG. 2) in which the electrode pad 12 is provided only in the peripheral portion is prepared. The electrode pad 12 is made of Ni, by electroless plating or the like.
A bump such as Cu may be provided.
【0024】次に、図2工程Aに示すように、チップ11
のデバイス面13と異方性導電シ−ト10のアレイ配線14を
施してない面とを位置合わせし、仮付けする。続いて、
図2工程Bに示すように、100〜150℃程度に加熱し、異
方性導電シ−ト10の全面に圧力を加える。(なお、この
圧力は、チップ11の周辺電極パッド12に相当する異方性
導電シ−ト10部分にのみ圧力をかけることもできる。)Next, as shown in FIG.
The device surface 13 and the surface of the anisotropic conductive sheet 10 on which the array wiring 14 is not provided are aligned and temporarily attached. continue,
As shown in step B of FIG. 2, heating is performed at about 100 to 150 ° C., and pressure is applied to the entire surface of the anisotropic conductive sheet 10. (Note that this pressure can be applied only to the anisotropic conductive sheet 10 portion corresponding to the peripheral electrode pad 12 of the chip 11.)
【0025】この加圧により、異方性導電シ−ト10の厚
さは、初期的には約50μmであったものが、接着後は含
有する導電性粒子32(前掲の図4参照)の粒径程度又はそ
れ以下の厚さとなる。そして、チップ11の周辺電極パッ
ド12と異方性導電シ−ト10の表面15部分(チップ11の周
辺電極パッド12とそれに相対する異方性導電シ−ト10の
アレイ配線14)とが導通することとなる。By this pressurization, the thickness of the anisotropic conductive sheet 10 was initially about 50 μm, but after adhesion, it contained conductive particles 32 (see FIG. 4 above). The thickness is about the particle size or less. Then, the peripheral electrode pad 12 of the chip 11 and the surface 15 portion of the anisotropic conductive sheet 10 (the peripheral electrode pad 12 of the chip 11 and the array wiring 14 of the anisotropic conductive sheet 10 opposite thereto) are electrically connected. Will be done.
【0026】次に、図2工程Cに示すように、アレイ配
線14に配設されているアレイ電極パッド16にバンプ17を
形成した後、モ−ルド樹脂18(例えば低熱膨張率のエポ
キシ系樹脂)によりコ−ティングする。なお、バンプ17
は、ボ−ルバンプ法によりスタッドバンプとすることが
でき、また、半田無電解メッキ、溶融半田ディップ等に
より半田バンプとすることもできる。Next, as shown in FIG. 2C, after forming bumps 17 on the array electrode pads 16 provided on the array wiring 14, a mold resin 18 (for example, an epoxy resin having a low coefficient of thermal expansion) is formed. ). Note that bump 17
Can be formed into stud bumps by the ball bump method, or can be formed into solder bumps by solder electroless plating, molten solder dip, or the like.
【0027】本実施例1では、以上のように異方性導電
シ−ト10を用いて電極パッド配置を変換しているので、
セラミックキャリアを用いる場合のようにスル−ホ−ル
を開ける必要がなく、また、熱圧着という簡単なプロセ
スで、アレイパッド型のチップに近いサイズの集積回路
パッケ−ジとすることができる。そのため、コストの低
減を図ることができる。In the first embodiment, since the arrangement of the electrode pads is converted by using the anisotropic conductive sheet 10 as described above,
It is not necessary to open a through hole as in the case of using a ceramic carrier, and an integrated circuit package of a size close to an array pad type chip can be obtained by a simple process of thermocompression bonding. Therefore, the cost can be reduced.
【0028】本実施例1に係る集積回路用パッケ−ジの
サイズの1例を挙げると、例えば5mm□のチップの場
合、チップ厚を300μm、異方性導電シ−ト厚を5μ
m、モ−ルド樹脂の肉厚を50μm、バンプ電極高さを10
0μmとすると、パッケ−ジサイズは、5.1mm□、厚さ
は455μm程度となる。As an example of the size of the package for an integrated circuit according to the first embodiment, for example, in the case of a 5 mm square chip, the chip thickness is 300 μm and the anisotropic conductive sheet thickness is 5 μm.
m, mold resin wall thickness 50 μm, bump electrode height 10
If it is 0 μm, the package size is 5.1 mm □ and the thickness is about 455 μm.
【0029】(実施例2)図3は、本発明の他の実施例
(実施例2)を示す集積回路用パッケ−ジの断面図であ
る。この実施例2に係る集積回路用パッケ−ジは、図3
に示すように、異方性導電シ−ト10、チップ21、該チッ
プ21の周辺電極パッド22、アレイ配線24、アレイ電極パ
ッド26、バンプ27、モ−ルド樹脂28からなり、アレイ配
線24の位置が前記実施例1と相違する例である。(Embodiment 2) FIG. 3 shows another embodiment of the present invention.
FIG. 6 is a sectional view of an integrated circuit package showing (Embodiment 2). The package for an integrated circuit according to the second embodiment is shown in FIG.
As shown in FIG. 3, the anisotropic conductive sheet 10, the chip 21, the peripheral electrode pad 22 of the chip 21, the array wiring 24, the array electrode pad 26, the bump 27, and the mold resin 28 In this example, the position is different from that of the first embodiment.
【0030】本実施例2の集積回路用パッケ−ジは、前
記実施例1と同様の方法で製造することができる。即
ち、まず、アレイ配線24を片面に施し、対面(反対面)に
アレイ電極パッド26を設けた異方性導電シ−ト10をチッ
プ21のデバイス面に位置合わせし、仮付けする。但し、
本実施例2においてアレイ配線24は、前記実施例1の場
合とは逆に異方性導電シ−ト10のチップ21側とする。The package for an integrated circuit of the second embodiment can be manufactured by the same method as that of the first embodiment. That is, first, the array wiring 24 is provided on one surface, and the anisotropic conductive sheet 10 provided with the array electrode pads 26 on the opposite surface (opposite surface) is aligned with the device surface of the chip 21 and temporarily attached. However,
In the second embodiment, the array wiring 24 is on the chip 21 side of the anisotropic conductive sheet 10 contrary to the first embodiment.
【0031】次いで、100〜150℃程度に加熱し、異方性
導電シ−ト10のアレイ電極パッド26部分に圧力を加え、
異方性導電シ−ト10上のチップ21側のアレイ配線24と、
反対側に設けてあるアレイ電極パッド26との導通を確保
し、そして、チップ21の周辺電極パッド22とそれに対応
する上記のアレイ電極パッド26とを導通するようにす
る。(なお、圧力は、異方性導電シ−ト10の全面にかけ
ても良い。)その後、アレイ電極パッド26に実施例1と
同様バンプ27を形成し、モ−ルド樹脂28によりチップ21
をコ−ティングする。Next, the temperature is raised to about 100 to 150 ° C., pressure is applied to the array electrode pad 26 portion of the anisotropic conductive sheet 10,
Array wiring 24 on the side of the chip 21 on the anisotropic conductive sheet 10,
The electrical continuity with the array electrode pad 26 provided on the opposite side is ensured, and the peripheral electrode pad 22 of the chip 21 and the corresponding array electrode pad 26 corresponding thereto are electrically conducted. (Note that the pressure may be applied to the entire surface of the anisotropic conductive sheet 10.) Thereafter, the bumps 27 are formed on the array electrode pads 26 in the same manner as in Example 1, and the chip 21 is formed by the mold resin 28.
Coating.
【0032】本実施例2では、以上のような方法で電極
パッド配置を変換し、集積回路パッケ−ジを作製するも
のであって、前記実施例1と同様の効果が生じる。In the second embodiment, the arrangement of the electrode pads is converted by the above method to manufacture the integrated circuit package, and the same effect as that of the first embodiment is produced.
【0033】[0033]
【発明の効果】本発明は、以上詳記したとおり、異方性
導電シ−トを用いてチップの電極パツド配置をアレイパ
ッド配置に変換しているので、スル−ホ−ルを開ける必
要がなく、また、熱圧着という簡単なプロセスで「アレ
イパッド型のチップに近いサイズの集積回路パッケ−
ジ」とすることができる効果が生じる。As described in detail above, according to the present invention, since the electrode pad arrangement of the chip is converted into the array pad arrangement by using the anisotropic conductive sheet, it is necessary to open the through hole. In addition, a simple process of thermocompression bonding is used to "integrate an integrated circuit package of a size close to an array pad type chip.
The effect that can be said to be "
【0034】例えば、本発明に係る集積回路パッケ−ジ
として、5mm□で225ピンのチップの場合、チップ厚を
300μm、異方性導電シ−ト厚を5μm、モ−ルド樹脂の
肉厚を50μm、バンプ電極高さを100μmとすると、パ
ッケ−ジサイズは5.1mm□、厚さは455μm程度となる
。これに対して、従来技術の場合、BGAパッケ−ジ
とすると、25〜30mm□で厚さは1〜2mmとなる。For example, in the case of a 5 mm square 225-pin chip as an integrated circuit package according to the present invention, the chip thickness is
If the thickness of the anisotropic conductive sheet is 300 μm, the thickness of the anisotropic conductive sheet is 5 μm, the thickness of the molded resin is 50 μm, and the bump electrode height is 100 μm, the package size is 5.1 mm □ and the thickness is about 455 μm. On the other hand, in the case of the conventional technique, the BGA package has a thickness of 25 to 30 mm □ and a thickness of 1 to 2 mm.
【0035】さらに、MCM(マルチチップモジュ−ル)
用としてベアチップを用いようとする場合、従来の集積
回路用パッケ−ジでは、出荷する側においてベアチップ
のテスト技術が未確立なため品質保証が困難であった
が、本発明に係る集積回路用パッケ−ジとすれば、品質
保証ができるため出荷が可能となり、ベアチップの代用
としてMCMに用いることができるようになる効果も生
じる。Furthermore, MCM (multi-chip module)
In the case where a bare chip is used as a package, the conventional integrated circuit package has a difficulty in quality assurance because the bare chip test technology has not been established on the shipping side. However, the package for an integrated circuit according to the present invention is difficult. In the case of (i), the quality can be assured and the product can be shipped, and there is an effect that it can be used for the MCM as a substitute for the bare chip.
【図1】本発明の一実施例(実施例1)を示す集積回路用
パッケ−ジの断面図FIG. 1 is a cross-sectional view of an integrated circuit package showing an embodiment (Embodiment 1) of the present invention.
【図2】図1に示す集積回路用パッケ−ジの工程A〜C
からなる製造工程順断面図2A to 2C are steps A to C of the package for the integrated circuit shown in FIG.
Cross-sectional view of manufacturing process consisting of
【図3】本発明の他の実施例(実施例2)を示す集積回路
用パッケ−ジの断面図FIG. 3 is a sectional view of a package for an integrated circuit showing another embodiment (second embodiment) of the present invention.
【図4】本発明で使用する異方性導電シ−トの一例を示
す図であって、(A)はその平面図であり、(B)は(A)の
a−a線断面図FIG. 4 is a diagram showing an example of an anisotropic conductive sheet used in the present invention, (A) is a plan view thereof, and (B) is a sectional view taken along the line aa of (A).
【図5】従来のPGA(キャビティアップタイプ)を示
す断面図FIG. 5 is a sectional view showing a conventional PGA (cavity-up type).
【図6】従来のPGA(キャビティダウンタイプ)を示
す断面図FIG. 6 is a cross-sectional view showing a conventional PGA (cavity down type).
【図7】従来のBGAを示す断面図FIG. 7 is a sectional view showing a conventional BGA.
【符号の説明】 10 異方性導電シ−ト 11,21 チップ 12,22 電極パッド 13, − デバイス面 14,24 アレイ配線 15, − 異方性導電シ−ト表面 16,26 アレイ電極パッド 17,27 バンプ 18,28 モ−ルド樹脂 31 樹脂 32 導電性粒子 50,60,70 配線基板 51,61,71 チップ 52,62,72 チップの周辺電極パッド 53,63,73 配線基板側の電極パッド 54,64, − キャビティ 55, − ,75 スル−ホ−ル 56,66, − ピン 57,67,77 キャップ − , − ,78 半田ボ−ル[Explanation of symbols] 10 anisotropic conductive sheet 11, 21 chip 12, 22 electrode pad 13, -device surface 14, 24 array wiring 15, -anisotropic conductive sheet surface 16, 26 array electrode pad 17 , 27 bumps 18, 28 mold resin 31 resin 32 conductive particles 50, 60, 70 wiring board 51, 61, 71 chip 52, 62, 72 chip peripheral electrode pad 53, 63, 73 wiring board side electrode pad 54, 64, -cavity 55,-, 75 through-hole 56, 66, -pin 57, 67, 77 cap-,-, 78 solder ball
───────────────────────────────────────────────────── フロントページの続き (72)発明者 日下 輝雄 東京都港区芝五丁目7番1号日本電気株式 会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Teruo Kusaka 5-7-1 Shiba, Minato-ku, Tokyo NEC Corporation
Claims (3)
樹脂シ−トを加圧した方向にのみ導電性を示す異方性導
電シ−トを用い、熱圧着によりチップの電極パッドと前
記異方性導電シ−ト面に設けられているアレイ配線とを
導通させ、樹脂封止してなることを特徴とする集積回路
用パッケ−ジ。1. An electrode pad of a chip by thermocompression bonding, using an anisotropic conductive sheet which is a conductive particle-containing resin sheet and exhibits conductivity only in the direction in which the resin sheet is pressed. A package for an integrated circuit, characterized in that it is electrically connected to the array wiring provided on the anisotropic conductive sheet surface and is resin-sealed.
子含有の異方性導電シ−ト面と、チップのデバイス面と
を位置合わせし、仮付けする工程、(2) 前記異方性導電
シ−トを熱圧着させ、チップの電極パッドと異方性導電
シ−トのアレイ配線とを導通させる工程、(3) モ−ルド
樹脂を充填する工程、を含むことを特徴とする集積回路
用パッケ−ジの製造方法。2. A step of (1) aligning and temporarily attaching a device surface of a chip and an anisotropic conductive sheet surface containing conductive particles, the surface of which is provided with array wiring, and (2) above The method is characterized by including a step of thermocompression-bonding the anisotropic conductive sheet to electrically connect the electrode pad of the chip and the array wiring of the anisotropic conductive sheet, and (3) a step of filling a mold resin. Method for manufacturing package for integrated circuit.
方法において、導電性粒子含有樹脂シ−トであって、該
樹脂シ−トを加圧した方向にのみ導電性を示す異方性導
電シ−トを用い、パッド配置をアレイ状に変換すること
を特徴とするパッド配置の変換方法。3. A method for converting a pad arrangement of an integrated circuit chip, comprising: an electrically conductive particle-containing resin sheet, which is electrically conductive only in a direction in which the resin sheet is pressed. -A pad arrangement conversion method, characterized in that the pad arrangement is converted into an array using a switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7200398A JP2713254B2 (en) | 1995-07-13 | 1995-07-13 | Package for integrated circuit, method of manufacturing the same, and method of converting pad arrangement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7200398A JP2713254B2 (en) | 1995-07-13 | 1995-07-13 | Package for integrated circuit, method of manufacturing the same, and method of converting pad arrangement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0936178A true JPH0936178A (en) | 1997-02-07 |
| JP2713254B2 JP2713254B2 (en) | 1998-02-16 |
Family
ID=16423665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7200398A Expired - Fee Related JP2713254B2 (en) | 1995-07-13 | 1995-07-13 | Package for integrated circuit, method of manufacturing the same, and method of converting pad arrangement |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2713254B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100401975B1 (en) * | 2001-12-27 | 2003-10-17 | 삼성전기주식회사 | Chip package and the method of fabricating the same |
| KR100444228B1 (en) * | 2001-12-27 | 2004-08-16 | 삼성전기주식회사 | Chip package and method of fabricating the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08330355A (en) * | 1995-03-24 | 1996-12-13 | Shinko Electric Ind Co Ltd | Semiconductor device |
-
1995
- 1995-07-13 JP JP7200398A patent/JP2713254B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08330355A (en) * | 1995-03-24 | 1996-12-13 | Shinko Electric Ind Co Ltd | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100401975B1 (en) * | 2001-12-27 | 2003-10-17 | 삼성전기주식회사 | Chip package and the method of fabricating the same |
| KR100444228B1 (en) * | 2001-12-27 | 2004-08-16 | 삼성전기주식회사 | Chip package and method of fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2713254B2 (en) | 1998-02-16 |
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