JPH093625A - Surface treatment method - Google Patents
Surface treatment methodInfo
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- JPH093625A JPH093625A JP7154741A JP15474195A JPH093625A JP H093625 A JPH093625 A JP H093625A JP 7154741 A JP7154741 A JP 7154741A JP 15474195 A JP15474195 A JP 15474195A JP H093625 A JPH093625 A JP H093625A
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- processed
- treated
- plasma
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- treatment
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Abstract
(57)【要約】
【目的】 被処理物表面の有機物及び水分を除去すると
共に機械加工変質層を元の組織に変態させて被処理物の
品質を維持し得る表面処理方法を提供する。
【構成】 被処理物Ｓの表面には、機械研磨及び／又は
ブラスト処理が施してあり、これらの物理的処理によっ
て被処理物はその表面の汚れの殆どを除去してある。通
水路４内に冷却水を通流してヘッド１の先端部分を冷却
し、またガス通流路８にシールドガスを供給して外ノズ
ル２の開口部５から被処理物Ｓの表面に吹きつけてガス
カーテンを形成する。そして、直流電源15から所要の出
力で電極10及び内ノズル６に印加してアーク放電させ、
作動ガス通流路９に例えば窒素ガスを所要の流量で導入
し、アーク放電によってプラズマを生成し、内ノズル６
の開口部７からプラズマジェットとして被処理物Ｓの表
面に放射する。
(57) [Summary] [Object] To provide a surface treatment method capable of removing the organic matter and water on the surface of an object to be treated and transforming the machined alteration layer into the original structure to maintain the quality of the object to be treated. [Structure] The surface of the object to be processed S is mechanically polished and / or blasted, and most of the dirt on the surface of the object to be processed is removed by these physical treatments. Cooling water is passed through the water passage 4 to cool the tip portion of the head 1, and a shield gas is supplied to the gas passage 8 to spray it from the opening 5 of the outer nozzle 2 onto the surface of the object S to be processed. To form a gas curtain. Then, by applying a required output from the DC power supply 15 to the electrode 10 and the inner nozzle 6 to cause arc discharge,
Nitrogen gas, for example, is introduced into the working gas passage 9 at a required flow rate, plasma is generated by arc discharge, and the inner nozzle 6
It radiates to the surface of the processing object S as a plasma jet from the opening 7.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、金属製の被処理物、特
に、真空チャンバ，真空チャンバと減圧ポンプとの連結
部品等の減圧系装置の構成部品，及び成膜工程で用いる
マスクといった減圧系装置内で使用する治具等の表面を
処理する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an object to be processed made of metal, in particular, a vacuum chamber, a component of a pressure reducing system such as a connecting part of a vacuum chamber and a pressure reducing pump, and a pressure reducing device such as a mask used in a film forming process. The present invention relates to a method of treating the surface of a jig or the like used in a system device.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】液晶パ
ネルの製造又はＬＳＩの製造等における成膜工程にあっ
ては、オーステナイト系ステンレス鋼等のマスクを用い
て成膜対象外の領域のマスキングを行っている。このマ
スクは高価であるため、マスクに付着した膜を除去する
再生処理を定期的に実施してマスクを再利用している。2. Description of the Related Art In a film forming process in manufacturing a liquid crystal panel or an LSI, a mask of austenitic stainless steel or the like is used to mask an area other than a film forming target. Is going. Since this mask is expensive, the mask is reused by periodically performing a regeneration process for removing the film attached to the mask.
【０００３】この再生処理の一方法にマスクを薬剤で洗
浄する化学的処理があるが、薬剤に対するマスクの耐食
性が低いという問題，使用済薬剤の処理の問題，及び化
学的処理の効率が低いという問題があった。これらの問
題のため、マスク表面を機械研磨又はブラスト処理する
物理的処理が実施されている。しかしながら、このよう
な物理的処理を施すと、オーステナイト系ステンレス鋼
ではその表面部分がマルテンサイト化した機械加工変質
層が形成され、加工硬化を生じ、また耐食性が低下する
という問題があった。There is a chemical treatment for cleaning the mask with a chemical as one method of this regenerating treatment, but it has a problem that the mask has a low corrosion resistance to the chemical, a problem of treating a used chemical, and a low efficiency of the chemical treatment. There was a problem. Due to these problems, physical treatments such as mechanical polishing or blasting of the mask surface have been carried out. However, when such a physical treatment is performed, the austenitic stainless steel has a problem in that a machined deteriorated layer having a martensite surface portion is formed, work hardening occurs, and corrosion resistance decreases.
【０００４】一方、再生処理したマスクを成膜装置で再
使用する場合、該マスクは成膜装置に備えられた真空チ
ャンバ内に配置されるので、真空チャンバを減圧すると
きの立ち上がり速度を高くするために、マスク表面に付
着した水分を除去しておく必要がある。マスク表面に付
着した水分を除去するには、通常、マスクをベーキング
炉内に搬入し、数百℃でこれを加熱する加熱処理が行わ
れていた。しかし、ベーキング炉のサイズによって加熱
処理できるマスクのサイズが制限されるという問題があ
った。一方、サイズが大きいマスクの加熱処理にも対応
すべくベーキング炉のサイズを大きくすると炉に要する
コストが高いという問題があった。On the other hand, when the reprocessed mask is reused in the film forming apparatus, since the mask is placed in the vacuum chamber provided in the film forming apparatus, the rising speed when depressurizing the vacuum chamber is increased. Therefore, it is necessary to remove the water adhering to the mask surface. In order to remove the water adhering to the mask surface, the mask is usually carried into a baking oven and heated at several hundreds of degrees Celsius. However, there is a problem that the size of the mask that can be heat-treated is limited depending on the size of the baking oven. On the other hand, if the size of the baking furnace is increased so as to cope with the heat treatment of a mask having a large size, there is a problem that the cost required for the furnace is high.
【０００５】また、マスク表面に残留する微量の有機物
を除去する方法として、減圧下，オゾンを所定流量で供
給し、これに紫外線（ＵＶ）を照射することによってオ
ゾンを分解し、この化学的に活性な分解物によって有機
物を分解するＵＶ−オゾン処理が知られている。しか
し、この方法は減圧下で行うため、真空チャンバのサイ
ズによって処理可能なマスクのサイズが制限されるとい
う問題があった。Further, as a method for removing a trace amount of organic substances remaining on the mask surface, ozone is supplied at a predetermined flow rate under reduced pressure, and the ozone is decomposed by irradiating it with ultraviolet rays (UV). UV-ozone treatment is known in which organic substances are decomposed by active decomposition products. However, since this method is performed under reduced pressure, there is a problem that the size of a mask that can be processed is limited by the size of the vacuum chamber.
【０００６】更に、マスク表面に形成された機械加工変
質層であるマルテンサイト層は、前述したベーキング炉
による水分除去のための加熱処理，及びＵＶ−オゾン処
理によってもその状態を維持しており、これらの処理に
よってはマスクの品質の低下は避けられない。Further, the martensite layer, which is a mechanically deteriorated layer formed on the surface of the mask, maintains its state even by the heat treatment for removing water by the above-mentioned baking furnace and the UV-ozone treatment. Degradation of the quality of the mask cannot be avoided by these processes.
【０００７】本発明はかかる事情に鑑みてなされたもの
であって、その目的とするところは被処理物を物理的に
処理した後、プラズマ処理を施すことによって、被処理
物表面の有機物及び水分を除去すると共に機械加工変質
層を元の組織に変態させて被処理物の品質を維持し得る
表面処理方法を提供することにある。The present invention has been made in view of such circumstances, and an object thereof is to physically treat an object to be processed and then perform a plasma treatment so that organic matter and moisture on the surface of the object are treated. It is an object of the present invention to provide a surface treatment method capable of maintaining the quality of an object to be treated by removing the above-mentioned matter and transforming the machined deteriorated layer into the original structure.
【０００８】[0008]
【課題を解決するための手段】本発明に係る表面処理方
法は、金属製の被処理物の表面を処理する方法であっ
て、前記被処理物の表面を物理的に処理する工程と、被
処理物の表面をプラズマで処理する工程とを含むことを
特徴とする。A surface treatment method according to the present invention is a method for treating the surface of a metal object to be treated, which comprises a step of physically treating the surface of the object to be treated, And a step of treating the surface of the object to be treated with plasma.
【０００９】[0009]
【作用】本発明の表面処理方法にあっては、金属製の被
処理物の表面を、機械研磨及び／又はブラスト処理等の
物理的な処理によって、半導体の成膜工程で使用される
マスクに付着した膜等の汚染物質，又は減圧系装置に用
いられる部品の製造工程で付着した汚れの殆どを除去す
る。そして、被処理物の表面をプラズマで処理すること
によって、被処理物の表面に残留する有機物を分解・ガ
ス化して揮発除去し、また水分を蒸発させる。このと
き、物理的な処理によって被処理物の表面に生じた機械
加工変質層は、プラズマの加熱による軟化焼きなまし効
果によって元の組織に変態する。In the surface treatment method of the present invention, the surface of the object to be treated made of metal is subjected to a physical treatment such as mechanical polishing and / or blast treatment to form a mask used in the semiconductor film forming step. Most of the contaminants such as the adhered film or the contaminants adhered in the manufacturing process of the parts used in the pressure reducing system are removed. Then, by treating the surface of the object to be treated with plasma, the organic substances remaining on the surface of the object to be treated are decomposed and gasified, volatilized and removed, and moisture is evaporated. At this time, the mechanically deteriorated layer generated on the surface of the object to be processed by the physical treatment is transformed into the original structure by the softening and annealing effect by the heating of the plasma.
【００１０】[0010]
【実施例】以下本発明をその実施例を示す図面に基づい
て具体的に説明する。図１は本発明に係る表面処理方法
の実施態様を示す側断面図であり、図中Ｓは金属製の被
処理物である。被処理物Ｓの表面には、バフ研磨等の機
械研磨及び／又はガラスビーズブラスト（ＧＢＢ）又は
アルミナブラスト等のブラスト処理が施してあり、これ
らの物理的処理によって被処理物はその表面の汚れの殆
どを除去してある。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings showing the embodiments thereof. FIG. 1 is a side sectional view showing an embodiment of a surface treatment method according to the present invention, in which S is a metal object to be treated. Mechanical polishing such as buffing and / or blasting such as glass bead blasting (GBB) or alumina blasting is applied to the surface of the object S to be processed, and the physical surface of the object to be processed is contaminated by the physical treatment. Has been removed.
【００１１】被処理物Ｓはステージ20上に載置してあ
り、該ステージ20によって被処理物Ｓは水平方向であり
直交するｘ軸及びｙ軸方向に移動される。被処理物Ｓの
上方には被処理物Ｓに対向してプラズマ照射用のヘッド
１が配置してあり、該ヘッド１は外ノズル２及び内ノズ
ル６を備える２重構造になっている。外ノズル２は略円
筒状をしており、その先端部分には開口部５に向かうに
つれて内径が徐々に小さくなった肉厚部３が形成してあ
る。この肉厚部３の内部には環状の通水路４が設けてあ
り、通水路４内には冷却水が通流されるようになってい
る。The object S to be processed is placed on the stage 20, and the object S to be processed is moved by the stage 20 in the horizontal and orthogonal x-axis and y-axis directions. A head 1 for plasma irradiation is arranged above the object to be processed S facing the object to be processed S, and the head 1 has a double structure including an outer nozzle 2 and an inner nozzle 6. The outer nozzle 2 has a substantially cylindrical shape, and a thick portion 3 having an inner diameter that gradually decreases toward the opening 5 is formed at a tip portion thereof. An annular water passage 4 is provided inside the thick portion 3, and cooling water is allowed to flow in the water passage 4.
【００１２】外ノズル２内には、該外ノズル２の内面形
状と同じ形状の筒状であり導電製の内ノズル６が、その
外周面と外ノズル２の内周面との間に所定の間隙を形成
するように装入してあり、内ノズル６の開口部７の先端
は外ノズル２の開口部５の先端と上下方向の位置を一致
させてある。外ノズル２と内ノズル６との間隙はＮ2，
Ａｒ等のシールドガスを通流させるガス通流路８になっ
ており、内ノズル６内はＮ2 ，Ｈｅ−Ｏ2 等のプラズマ
生成用のガスを通流させる作動ガス通流路９になってい
る。Inside the outer nozzle 2, an inner nozzle 6 made of a conductive material and having the same shape as the inner surface of the outer nozzle 2 is provided between the outer peripheral surface and the inner peripheral surface of the outer nozzle 2. They are inserted so as to form a gap, and the tip of the opening 7 of the inner nozzle 6 is aligned with the tip of the opening 5 of the outer nozzle 2 in the vertical direction. The gap between the outer nozzle 2 and the inner nozzle 6 is N 2 ,
A gas passage 8 for passing a shield gas such as Ar is formed, and the inside of the inner nozzle 6 becomes a working gas passage 9 for allowing a gas for plasma generation such as N 2 and He—O 2 to flow. ing.
【００１３】内ノズル６内部には尖鋭な棒状の電極10が
内ノズル６の中心軸上に配置してあり、該電極10の先端
は内ノズル６の開口部７から所定距離を隔てて配してあ
る。この電極10は直流電源15の陰極に接続してあり、直
流電源15の陽極は内ノズル６に接続してある。A sharp rod-shaped electrode 10 is arranged on the central axis of the inner nozzle 6 inside the inner nozzle 6, and the tip of the electrode 10 is arranged at a predetermined distance from the opening 7 of the inner nozzle 6. There is. The electrode 10 is connected to the cathode of the DC power supply 15, and the anode of the DC power supply 15 is connected to the inner nozzle 6.
【００１４】このようなヘッド１にあっては、通水路４
内に冷却水を通流してヘッド１の先端部分を冷却し、ま
たガス通流路８にシールドガスを供給して外ノズル２の
開口部５から被処理物Ｓの表面に吹きつけてガスカーテ
ンを形成する。そして、直流電源15から所要の出力で電
極10及び内ノズル６に印加してアーク放電させ、作動ガ
ス通流路９に例えば窒素ガスを所要の流量で導入し、ア
ーク放電によってプラズマを生成し、内ノズル６の開口
部７からプラズマジェットとして被処理物Ｓの表面に放
射する。In such a head 1, the water passage 4
A cooling gas is passed through the inside to cool the tip portion of the head 1, and a shielding gas is supplied to the gas passage 8 to blow the shielding gas from the opening 5 of the outer nozzle 2 onto the surface of the object S to be treated, so that a gas curtain. To form. Then, by applying a required output from the DC power supply 15 to the electrode 10 and the inner nozzle 6 to cause arc discharge, nitrogen gas is introduced into the working gas passage 9 at a required flow rate, and plasma is generated by the arc discharge. The plasma is jetted from the opening 7 of the inner nozzle 6 to the surface of the object S to be processed.
【００１５】ヘッド１は上下方向に移動可能になってお
り、ヘッド１と被処理物Ｓとの間を予め試験によって定
めた距離になるようにヘッド１の高さを調整することに
よって、プラズマジェットの温度を略１８００℃〜２０
００℃の範囲に制御する。The head 1 is movable in the vertical direction, and the height of the head 1 is adjusted so that the distance between the head 1 and the object S to be processed becomes a predetermined distance by a test. Temperature of about 1800 ℃ ~ 20
Control in the range of 00 ° C.
【００１６】被処理物Ｓの表面はプラズマジェットによ
って、その表面に付着した水分が蒸発し、有機物が分解
されて除去される一方、プラズマジェットを覆うシール
ドガスによってプラズマジェットが放射された被処理物
Ｓの表面の酸化が防止される。また、前述したプラズマ
ジェットの温度範囲では被処理物Ｓの表面が軟化焼きな
まし効果によって結晶組織変化し、物理的処理によって
生じた機械加工変質層が元の組織に変態する。On the surface of the object S to be processed, water adhering to the surface of the object S is evaporated by the plasma jet, and organic substances are decomposed and removed, while the plasma jet is emitted by the shield gas covering the plasma jet. Oxidation of the surface of S is prevented. Further, in the above-mentioned temperature range of the plasma jet, the surface of the object S to be processed changes its crystal structure due to the softening and annealing effect, and the mechanically deteriorated layer generated by the physical treatment is transformed into the original structure.
【００１７】次に本発明に係る表面処理方法を実施した
結果について説明する。被処理物としてＳＵＳ３０４製
の成膜用マスキング治具を用い、その表面に付着した膜
をバフ研磨及びＧＢＢ処理により除去した。この被処理
物を図１に示した装置にセットし、作動ガスとして窒素
ガスを２５Ｌ／ｍｉｎで供給し、出力２０Ａで生成した
プラズマジェットを、ヘッドと被処理物との距離が４〜
５ｃｍとなるように調整してヘッドから被処理物の表面
に放射し、処理速度１〜２ｃｍ／ｓｅｃでプラズマ処理
を行った。そして、プラズマ処理の前後の被処理物の表
面について、金属結晶組織検査，ガス放出特性，及び接
触角測定によりそれぞれ評価した。Next, the results of carrying out the surface treatment method according to the present invention will be described. A film-forming masking jig made of SUS304 was used as an object to be processed, and the film adhering to the surface was removed by buffing and GBB processing. This object to be processed was set in the apparatus shown in FIG. 1, nitrogen gas was supplied at 25 L / min as a working gas, and the plasma jet generated at an output of 20 A was used when the distance between the head and the object to be processed was 4 to 4.
It was adjusted to be 5 cm and radiated from the head onto the surface of the object to be processed, and plasma processing was performed at a processing speed of 1 to 2 cm / sec. Then, the surface of the object to be treated before and after the plasma treatment was evaluated by metal crystal structure inspection, gas release characteristics, and contact angle measurement, respectively.
【００１８】図２はプラズマ処理の前の被処理物の断面
図であり、図３はプラズマ処理の後の被処理物の断面図
である。図２から明らかな如く、物理的処理後プラズマ
処理前の被処理物の金属組織には、その表面近傍に針状
のマルテンサイト組織が認められるが、図３から明らか
な如く、プラズマ処理前後の被処理物の金属組織には、
マルテンサイト組織は認められず、オーステナイト組織
に変態していた。FIG. 2 is a sectional view of the object to be processed before the plasma processing, and FIG. 3 is a sectional view of the object to be processed after the plasma processing. As is clear from FIG. 2, a needle-like martensite structure is recognized in the vicinity of the surface of the metal structure of the object to be treated after the physical treatment and before the plasma treatment, but as is clear from FIG. The metal structure of the object to be treated
No martensite structure was observed and it was transformed into an austenite structure.
【００１９】表１はガス放出特性の測定結果を示すもの
である。ガス放出特性は、加熱装置を備えるチャンバ内
でプラズマ処理前又は処理後の被処理物を加熱し、該チ
ャンバに露点が−１２０℃の窒素ガスを流入し、チャン
バから流出された窒素ガスの露点を測定し、水分量に換
算することによって評価した。Table 1 shows the measurement results of the gas release characteristics. The gas release characteristics are as follows: The object to be treated before or after the plasma treatment is heated in a chamber equipped with a heating device, nitrogen gas having a dew point of −120 ° C. flows into the chamber, and the dew point of the nitrogen gas discharged from the chamber. Was measured and evaluated by converting to water content.
【００２０】[0020]
【表１】 [Table 1]
【００２１】表１から明らかな如く、プラズマ処理後は
処理前に比べて水分が大幅に低減されている。As is clear from Table 1, the water content after the plasma treatment is significantly reduced as compared with that before the plasma treatment.
【００２２】表２はプラズマ処理前後の被処理物に水滴
をそれぞれ滴下し、その水滴の接触角を測定した結果を
示すものである。表２から明らかな如く、プラズマ処理
後は処理前に比べて水滴の接触角が大幅に低減されてお
り、プラズマ処理によって被処理物表面の有機物は単分
子膜程度まで除去されているものと考えられる。Table 2 shows the results of measuring the contact angle of each water drop by dropping water drops on the object to be treated before and after the plasma treatment. As is clear from Table 2, the contact angle of water droplets is significantly reduced after the plasma treatment compared to before the treatment, and it is considered that the organic substances on the surface of the object to be treated are removed to the extent of a monomolecular film by the plasma treatment. To be
【００２３】[0023]
【表２】 [Table 2]
【００２４】なお、本実施例にあっては被処理物として
半導体の成膜工程で使用するマスクについて説明してい
るが、本発明はこれに限らず、真空チャンバ又は排気系
部品等，減圧下で使用される金属製部品等の表面処理に
特に好適であり、また常圧下で使用される金属製部品等
の表面処理にも好適であることはいうまでもない。In the present embodiment, the mask used in the film forming process of the semiconductor as the object to be processed has been described, but the present invention is not limited to this, and a vacuum chamber or an exhaust system part, etc., under reduced pressure. It is needless to say that it is particularly suitable for the surface treatment of metal parts and the like used in 1. and is also suitable for the surface treatment of metal parts and the like used under normal pressure.
【００２５】[0025]
【発明の効果】以上詳述した如く、本発明に係る表面処
理方法にあっては、プラズマ処理によって、被処理物の
表面に残留する有機物及び水分を除去し、物理的な処理
によって被処理物の表面に生じた機械加工変質層を元の
組織に変態させるため、被処理物の品質が低下すること
なく被処理物の表面が洗浄・再生され、被処理物の減圧
下での使用にあたって、減圧の立ち上がりが速い。ま
た、シールドガスを利用することによって、プラズマ処
理は常圧で行うことが可能であり、これによって被処理
物のサイズに拘らず表面処理を行うことができ、サイズ
が大きい被処理物であっても低コストで表面処理を行う
ことができる等、本発明は優れた効果を奏する。As described in detail above, in the surface treatment method according to the present invention, the plasma treatment removes organic substances and water remaining on the surface of the object to be treated, and the object to be treated is physically treated. In order to transform the machined deteriorated layer generated on the surface of the to the original structure, the surface of the object to be processed can be washed and regenerated without degrading the quality of the object to be processed, and when using the object under reduced pressure, The decompression rises quickly. Further, by using the shield gas, the plasma treatment can be performed at normal pressure, which allows the surface treatment to be performed regardless of the size of the object to be treated. The present invention has excellent effects such as surface treatment at low cost.
【図１】本発明に係る表面処理方法の実施態様を示す側
断面図である。FIG. 1 is a side sectional view showing an embodiment of a surface treatment method according to the present invention.
【図２】プラズマ処理の前の被処理物の断面図である。FIG. 2 is a cross-sectional view of an object to be processed before plasma processing.
【図３】プラズマ処理の後の被処理物の断面図である。FIG. 3 is a cross-sectional view of an object to be processed after plasma processing.
１ ヘッド ２ 外ノズル ６ 内ノズル １０ 電極 １５ 直流電源 Ｓ 被処理物 1 Head 2 Outer Nozzle 6 Inner Nozzle 10 Electrode 15 DC Power Supply S Workpiece
Claims (1)
であって、 前記被処理物の表面を物理的に処理する工程と、被処理
物の表面をプラズマで処理する工程とを含むことを特徴
とする表面処理方法。1. A method of treating a surface of an object to be treated made of metal, which comprises a step of physically treating the surface of the object to be treated and a step of treating the surface of the object to be treated with plasma. A surface treatment method characterized by the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7154741A JP2920605B2 (en) | 1995-06-21 | 1995-06-21 | Surface treatment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7154741A JP2920605B2 (en) | 1995-06-21 | 1995-06-21 | Surface treatment method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH093625A true JPH093625A (en) | 1997-01-07 |
| JP2920605B2 JP2920605B2 (en) | 1999-07-19 |
Family
ID=15590912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7154741A Expired - Fee Related JP2920605B2 (en) | 1995-06-21 | 1995-06-21 | Surface treatment method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2920605B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006303075A (en) * | 2005-04-19 | 2006-11-02 | E Square:Kk | Method and device for drying substrate |
| KR20210004741A (en) * | 2019-07-05 | 2021-01-13 | 세메스 주식회사 | Plasma torch and system for treating component of semiconductor manufacturing equipment with the plasma torch |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01294875A (en) * | 1988-05-20 | 1989-11-28 | Hitake Seiko Kk | Surface treatment for resin film and the like |
-
1995
- 1995-06-21 JP JP7154741A patent/JP2920605B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01294875A (en) * | 1988-05-20 | 1989-11-28 | Hitake Seiko Kk | Surface treatment for resin film and the like |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006303075A (en) * | 2005-04-19 | 2006-11-02 | E Square:Kk | Method and device for drying substrate |
| KR20210004741A (en) * | 2019-07-05 | 2021-01-13 | 세메스 주식회사 | Plasma torch and system for treating component of semiconductor manufacturing equipment with the plasma torch |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2920605B2 (en) | 1999-07-19 |
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