JPH0944820A - Magnetoresistive magnetic head - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a magnetoresistive magnetic head with which the destruction of a magnetoresistive element part by the static voltage suddenly impressed between the electrodes of the magnetoresistive magnetic head is prevented and which is optimum for high-density magnetic recording and reproducing, is highly reliable and has a good yield at the time of production. SOLUTION: A pair of magnetic shielding layers 3, 10, the magnetoresistive effect element part 6 and a pair of electrodes 9, 9' for passing sense current to this magnetoresistive element part and detecting the voltage change by signals are arranged on a substrate and a capacitor is constituted by disposing a dielectric substance 13' between one of a pair of there electrodes 9, 9' and one of a pair of the magnetic shielding layers 3, 10. A resistor of a resistance value larger than the resistance value of the magnetoresistive effect element part may be disposed in place of the magnetoresistive magnetic head capacitor formed to have a capacity from 5pF to 100μF.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic head used in a magnetic recording device such as a magnetic disk device, which is a read-only magnetic resistance for detecting a signal written on a magnetic recording medium by utilizing a magnetoresistive effect. The present invention relates to an effect type magnetic head.

[0002]

2. Description of the Related Art A read-only magnetoresistive effect magnetic head for detecting a signal recorded on a magnetic recording medium by utilizing a magnetoresistive effect peculiar to a ferromagnetic material is generally disclosed in JP-A-62-4.
No. 0610, a magnetoresistive effect element having at least a pair of magnetic shield layers on a substrate, a soft magnetic bias film for applying a lateral bias magnetic field, and magnetic domain control means for controlling a magnetic domain structure. And a electrode for applying a sense current to the magnetoresistive effect element section to detect a signal voltage.

On the other hand, in Japanese Patent Laid-Open No. 61-77114, a magnetoresistive effect type magnetic structure having a structure in which the magnetic shield layers are connected so as to have an equipotential to prevent electrostatic discharge generated between the magnetic shield layers is disclosed. A head is disclosed. Further, Japanese Patent Laid-Open No. 94103/1990 discloses a magnetoresistive effect element protection circuit provided with feedback means for sensing the central electric potential of the magnetoresistive effect element and always maintaining the central electric potential at a reference electric potential. ing.

Further, Japanese Patent Laid-Open No. 6-103508 discloses that
A diode or a resistor is connected in parallel with the magnetoresistive effect magnetic head, or a resistor having a resistance value smaller than this magnetoresistive effect element is connected in parallel with the magnetoresistive effect element forming the magnetoresistive effect magnetic head. A magnetic disk device is disclosed. Furthermore, Japanese Patent Laid-Open No. 6-60338 discloses a magnetic memory device having a protection circuit that short-circuits terminals when a static voltage higher than a certain value is applied between the terminals of the magnetoresistive head.

[0005]

In various manufacturing processes of a magnetoresistive effect type magnetic head, that is, in manufacturing and assembling elements, heads, etc., abrupt changes occur between electrodes on both ends of the magnetoresistive effect element due to various factors. A static voltage may be applied, and depending on the magnitude of this static voltage, the magnetoresistive effect element part of the head was destroyed. The destruction of the magnetoresistive effect type magnetic head due to such static electricity is due to the fact that the magnetoresistive effect element part is a laminated body of thin films and a very high-density current easily flows even at a static voltage which is usually considered to be low. Resistance effect It is considered to be a phenomenon due to the structure peculiar to the magnetic head.

The above-mentioned prior arts all have a problem in that measures against static electricity suddenly applied to such a magnetoresistive effect element portion are not sufficiently taken. That is, the conventional technique disclosed in Japanese Patent Laid-Open No. 62-40610 discloses a magnetoresistive effect magnetic head, and does not describe any countermeasure against the static electricity.

Further, the prior art described in Japanese Patent Laid-Open No. 61-77114 shows a countermeasure against static electricity generated between magnetic shield layers. Static electricity suddenly applied to the shield layer and the magnetoresistive effect element portion is disclosed. There was a problem that nothing was described for the above. In addition, Japanese Unexamined Patent Application Publication No.
The conventional technique described in Japanese Patent No. 94103 has a problem that no measures are taken against the occurrence of discharge between the shield layer and the magnetoresistive effect element portion when a potential difference occurs in the shield layer.

Further, in the conventional technique described in Japanese Patent Laid-Open No. 6-103508, the resistance value of the resistor is smaller than that of the magnetoresistive effect element, so that the current flowing through the magnetoresistive effect element at the time of reproduction becomes small and a sufficient output can be obtained. There was a problem that I could not. In addition, there is a problem that the diode is not built in the element, and even if the one-way diode is connected during the manufacturing, the effect is not obtained when the electrostatic characteristics are opposite.

Further, the prior art disclosed in Japanese Patent Application Laid-Open No. 6-60338 discloses a diode, a capacitor or the like as a protection circuit for the magnetoresistive effect element portion, but this diode is smaller than the breakdown voltage of 300 mV. It operates on voltage. Also, although the capacitance of the capacitor is not described, if estimated from the voltage of the diode,
It is about 1 pF, or roughly estimated to be about 2 to 3 pF. If the diode and the capacitor are in such a quantity, there is a problem that the effect against the above-mentioned suddenly applied static voltage is insufficient.

It is an object of the present invention to provide a magnetoresistive effect magnetic head which is most suitable for high density magnetic recording / reproduction and has high reliability and good yield in manufacturing.

[0011]

In order to achieve the above object, a magnetoresistive head of the present invention is provided on a substrate,
A pair of upper and lower magnetic shield layers, a magnetoresistive effect element section, and a pair of electrodes for detecting a voltage change caused by a signal by flowing a sense current through the magnetoresistive effect element section are provided. An electronic element that allows a current greater than or equal to a predetermined value to be provided between one of the pair of magnetic shield layers and the magnetic shield layer.

In the above magnetoresistive effect magnetic head, one kind of a predetermined capacitor or resistor may be provided between the electrode and the magnetic shield layer, and one magnetoresistive effect type magnetic head may have a plurality of these. There is no problem in providing different types.

The above capacitor has a capacitance of 10p.
The range of F to 10 μF is more preferable. Further, it is most preferable that the capacitance of the capacitor section is 5 pF or more and the sum of the capacitance of the capacitor section and the read / write IC is 50 pF or less for high-speed transfer.

Further, the magnetic recording apparatus of the present invention includes a magnetic recording medium, a magnetoresistive effect magnetic head for reading data recorded on the magnetic recording medium, and a relative relationship between the magnetic recording medium and the magnetoresistive effect magnetic head. The magnetic resistance effect type magnetic head includes the drive means for moving the position, the reproducing means for reading the data, and the control means for controlling these, and the magnetoresistive effect type magnetic head is used as the magnetoresistive effect type magnetic head. It was done like this.

[0015]

By providing a predetermined capacitor, resistor or bidirectional diode between the electrodes, or by providing a predetermined capacitor or resistor between the electrode and the magnetic shield layer, sudden static electricity is applied between the electrodes. If some or all of the static is shunted to a resistor or bidirectional diode,
As a result of being stored in the capacitor, the current density flowing through the magnetoresistive effect element is significantly reduced. Therefore, the magnetoresistive effect magnetic head is not destroyed by static electricity, and a highly reliable magnetoresistive effect magnetic head suitable for high-density magnetic recording / reproduction can be manufactured with a good yield. Furthermore, this effect is also effective when the magnetoresistive head is incorporated in a magnetic disk device.

[0016]

EXAMPLES The present invention will be described in detail below with reference to examples. <Embodiment 1> FIG. 1 is a plan view of a magnetoresistive head according to a first embodiment of the present invention, and FIG. 2 is a sectional view taken along the line AA '. The structure of the magnetoresistive effect magnetic head 14 is as follows. On a substrate 1 made of an insulator such as alumina-titanium carbide, a pair of magnetic shield layers 3 and 10 (thickness of 1 to 4 μm) are provided via a base insulating layer 2 made of alumina or the like for flattening. , Insulating layers 4, 5 (0.05) made of alumina, silica, etc. that form the gap length.
To 0.2 μm) and a magnetoresistive effect element portion 6 composed of a soft magnetic bias film for applying a lateral bias magnetic field of a predetermined shape, a non-magnetic high resistance conductor, a magnetoresistive effect film, etc. on the medium facing surface side. , A magnetic domain control bias film 7 for controlling the magnetic domain structure of the magnetoresistive effect element portion 6, and Ta / Au / Ta.
An electrode 9 made of a conductive layer such as the above, an insulating layer 11 for protecting these, and an electrode terminal pad 12 are formed. On the other hand, between the electrodes 9 opposite to the medium resistance surface, a resistance portion 13 made of the same constituent material as the magnetoresistive effect element portion 6 and processed into a predetermined shape so as to have a predetermined resistance value is formed. There is.

This magnetoresistive effect magnetic head 14 has electrodes 9 when reproducing a signal written on a magnetic recording medium.
From the above, a sense current is caused to flow through the magnetoresistive effect element section 6, and a change in resistance of the magnetoresistive effect element section 6 due to a signal magnetic flux is detected from the electrode 9 as a voltage change. Therefore, this voltage change, that is, the output increases or decreases according to the sense current flowing in the magnetoresistive effect element portion 6, but the sense current is also shunted to the resistance portion 13 provided between the electrodes 9. However, the resistance portion 13 and the magnetoresistive effect element portion 6 are configured in parallel, and the resistance portion 13
Since the resistance value of 1 is set to 100 times the resistance value of the magnetoresistive effect element portion 6, the loss of the sense current due to the shunt can be almost ignored. The resistance value of the resistance portion 13 is preferably 5 to 100 times the resistance value of the magnetoresistive effect element portion 6 in consideration of the effect of electrostatic breakdown as will be described later and the loss of the sense current.

On the other hand, the magnetoresistive effect magnetic head 14
When a potential difference due to static electricity suddenly occurs between the electrodes 9 of the above, static electricity naturally flows through the magnetoresistive effect element portion 6 without the resistance portion 13. Depending on the magnitude of the current value flowing at that time, the magnetoresistive effect element portion 6 may be melted due to Joule heat or may be broken due to electromigration. However, as in this embodiment, the electrode 9
If the space is short-circuited by the resistance portion 13, the static electricity will be shunted to the resistance portion 13, and the amount of static electricity flowing through the magnetoresistive effect element portion 6 will be greatly reduced. Part 6 results in escape from destruction.

The magnetoresistive effect magnetic head 14 of this embodiment.
The operation principle of No. 1 is as described above, but the magnetoresistive effect magnetic head 14 has a great effect on the destruction of the magnetoresistive effect magnetic head due to static electricity suddenly applied between the electrodes 9. Therefore, the reliability of the magnetoresistive magnetic head can be significantly improved, and the yield can be improved. Further, this effect can be expected when the magnetoresistive head is incorporated in a magnetic disk device.

<Embodiment 2> FIG. 3 is a plan view of a magnetoresistive head of a second embodiment of the present invention, and FIG.
It is a sectional view taken on the line B '. The structure of the magnetoresistive effect type magnetic head of this embodiment is almost the same as the structure of the above-mentioned first embodiment, but as shown in FIG. It is formed so as to form an electric circuit in parallel with the effect element portion 6. The capacitor section 15 is provided with metal films above and below a dielectric made of a Ti oxide film. As the dielectric, an Al oxide film or the like may be used instead of the Ti oxide film. A carbon film may be used instead of the metal film.

The operating principle of the magnetoresistive magnetic head 14 according to this embodiment is almost the same as that of the magnetoresistive magnetic head 14 of the first embodiment. In this embodiment, since the capacitor portion 15 is provided between the electrodes 9 instead of the resistor, there is no influence on the DC sense current. However, in the case of static electricity that is instantaneously applied between the electrodes 9, electrostatic charges are temporarily accumulated in the capacitor unit 15,
The amount of static electricity instantaneously flowing through the magnetoresistive effect element portion 6 is greatly reduced. The amount of electric charge temporarily accumulated in the capacitor unit 15 increases as the capacitance of the capacitor unit 15 increases. Therefore, from the viewpoint of protecting the magnetoresistive effect element unit 6 from static electricity, the capacitance of the capacitor unit 15 is preferably 5 pF or more. If the capacitance of the capacitor portion is too large, the shape thereof becomes too large, so the range of 5 pF to 100 μF is preferable, and the range of 10 pF to 10 μF is more preferable. Further, it is most preferable that the capacitance of the capacitor section is 5 pF or more and the sum of the capacitance of the capacitor section and the read / write IC is 50 pF or less in order to perform high-speed transfer described later. As a result, the magnetoresistive effect element portion 6 is protected from being destroyed.

As described above, the effect of the magnetoresistive effect magnetic head 14 according to the present embodiment is almost the same as the effect of the magnetoresistive effect type magnetic head 14 according to the first embodiment, and the reliability of the magnetoresistive effect type magnetic head is improved. This effect can be greatly improved, and at the same time, this effect can be expected when this magnetoresistive effect magnetic head is incorporated in a magnetic disk device.

The above high-speed transfer will be described.
High-frequency transfer requires high-frequency transmission. In particular, when a capacitor is provided between the electrodes, that point must be taken into consideration. We will examine this point.
If the distance between the terminal of the magnetic head and the read / write IC is long, the electrostatic capacity and the inductance increase and the resonance point is lowered. Generally, it is desirable that the resonance frequency is at least twice the maximum usable frequency in the device. For example, in a 3.5-inch disk device, the inductance between the magnetic head terminal and the read / write IC is suppressed to 42 mm or less and the inductance is set to 30 mm.
When nH and capacitance is 20pF, transfer rate is 12
If MB / s, the maximum usable frequency is 4.5 times that of 54
It is desirable that the resonance frequency is twice as high as 108 MHz or more. FIG. 12 shows the result of calculating the relationship between the sum of the capacitance of the magnetic head and the input capacitance of the read / write IC and the resonance frequency using these values. Therefore, in order to set the resonance frequency to 108MHz or higher, the capacitance is 50p.
F or less is required, and the sum of the capacitance of the head and the input capacitance of the read / write IC must be 50 pF or less. If the capacity of the magnetic head is 30 pF, the input capacity of the read / write IC must be 20 pF or less.

<Third Embodiment> FIG. 5 is a plan view of a magnetoresistive effect type magnetic head according to a third embodiment of the present invention, and FIG.
It is C 'line sectional drawing. The structure of the magnetoresistive effect magnetic head of this embodiment is almost the same as that of the above-described first embodiment, but a semiconductor such as Si is used as the substrate 1, and the resistance between the electrodes 9 is changed as shown in FIG. Instead of, the diode 17 formed on the semiconductor is connected so as to form an electric circuit in parallel with the magnetoresistive effect element section 6. This diode is manufactured by forming an N ⁺ P ⁺ region on a Si substrate by ion implantation and thermal diffusion, forming an insulating film of a thermal oxide film, and wiring.

The magnetoresistive effect magnetic head 14 of this embodiment.
The operating principle of the magnetoresistive head 14 is also the same as that of the first embodiment.
Is the same as In this embodiment, the diode 17 is provided between the electrodes 9.
Since this is provided, it has no effect on the DC sense current. However, when static electricity is instantaneously applied between the electrodes 9, the diodes 17 are short-circuited when the static electricity voltage exceeds the threshold voltage of the diodes 17,
Static electricity above the threshold voltage of the diode 17 does not flow through the magnetoresistive effect element portion 6. As a result, the magnetoresistive effect element portion 6 is protected from being destroyed by static electricity applied instantaneously. Therefore, the threshold voltage of the diode 17 may destroy the magnetoresistive effect element portion 6.
It may be 5 V or more.

As described above, the effect of the magnetoresistive effect magnetic head 14 according to the present embodiment is almost the same as that of the magnetoresistive effect magnetic head 14 according to the first embodiment, and the reliability of the magnetoresistive effect magnetic head is greatly improved. The yield can be improved. At the same time, this effect can be expected when the magnetoresistive head is incorporated in a magnetic disk device.

<Fourth Embodiment> FIG. 7 is a perspective view of a magnetoresistive effect magnetic head according to a fourth embodiment of the present invention. The structure of this magnetoresistive effect magnetic head is as follows. A pair of magnetic shield layers 3, 10 (1 to 1) are provided on a substrate 1 made of an insulator such as alumina-titanium carbide, with a base insulating layer 2 made of alumina or the like thickened for flattening being interposed.
4 μm thick) and insulating layers 4, 5 (0.05 to 0.2 μm thick) made of alumina, silica, etc. that form the gap length.
And a magnetoresistive effect element portion 6 composed of a soft magnetic bias film for applying a lateral bias magnetic field of a predetermined shape, a non-magnetic high resistance conductor film, a magnetoresistive effect film, etc. on the medium facing surface side, and Ta /
Electrodes 9 and 9'made of a conductor layer of Au / Ta or the like are formed. The electrodes 8 and 9 are laminated at a position opposite to the medium facing surface, and a dielectric material 15 'is inserted between the electrodes to form a capacitor by the distance and the area between the electrodes. In the case of this example, the capacitance was 50 pF.

This capacitor constitutes an electric circuit in parallel with the magnetoresistive effect element section 6. Therefore, when static electricity is momentarily applied between the electrodes 9 and 9 ', electrostatic charges are temporarily accumulated in the capacitor, and the amount of static electricity momentarily flowing through the magnetoresistive effect element portion 6 is greatly reduced. By overlapping a part of the electrodes in the element stacking direction as in this embodiment, the capacitance of the capacitor can be increased.

As described above, the effect of the magnetoresistive effect magnetic head according to the present embodiment is almost the same as that of the magnetoresistive effect type magnetic head according to the first embodiment, and the reliability of the magnetoresistive effect type magnetic head can be greatly improved. The yield can be improved. At the same time, this effect can be expected when the magnetoresistive head is incorporated in a magnetic disk device.

<Embodiment 5> FIG. 8 is a perspective view of a magnetoresistive head according to another embodiment of the present invention. The structure of this magnetoresistive effect magnetic head is almost the same as that of the above-described fourth embodiment, but a high resistance material is inserted between the stacked electrodes 9 and 9 ′ as shown in FIG. 13 '
And the resistance constitutes an electric circuit in parallel with the magnetoresistive effect element section 6.

This magnetoresistive effect magnetic head uses electrodes 9 when reproducing a signal written on a magnetic recording medium.
A sense current is caused to flow from 9 ′ to the magnetoresistive effect element section 7, and a change in resistance of the magnetoresistive effect element section 7 due to a signal magnetic flux is detected as a voltage change from the electrodes 9 and 9 ′. Therefore, this voltage change, that is, the output increases or decreases according to the sense current flowing through the magnetoresistive effect element section 7, but the sense current is also shunted to the resistance section 13 ′ provided between the electrodes 8 and 9. However, since the resistance portion 13 ′ and the magnetoresistive effect element portion 6 are configured in parallel and the resistance value of the resistance portion 13 ′ is set to 5 times the resistance value of the magnetoresistive effect element portion 6, sensing by shunting is performed. The current loss is almost negligible.

On the other hand, when a potential difference due to static electricity suddenly occurs between the electrodes 9 and 9'of this magnetoresistive effect type magnetic head, static electricity naturally causes the magnetoresistive effect element portion 6 to exist without the resistance portion 13 '. It will flow. Depending on the magnitude of the current value flowing at that time, the magnetoresistive effect element portion 6 may be melted due to Joule heat or may be broken due to electromigration. However, if the electrodes 9 and 9 ′ are short-circuited by the resistance portion 13 ′ as in the present embodiment, the static electricity is shunted to the resistance portion 13 ′, and the magnetoresistive effect element portion 6 is instantaneously switched. The amount of static electricity flowing is greatly reduced, and the magnetoresistive effect element portion 6 is escaped from destruction.

As described above, the effect of the magnetoresistive effect magnetic head according to the present embodiment is almost the same as that of the magnetoresistive effect magnetic head according to the first embodiment, and the reliability of the magnetoresistive effect magnetic head can be greatly improved. The yield can be improved. At the same time, this effect can be expected when the magnetoresistive head is incorporated in a magnetic disk device.

<Embodiment 6> FIG. 9 is a perspective view of a magnetoresistive head according to a sixth embodiment of the present invention. In the case of the fourth embodiment, the capacitor is formed between the electrodes 9 and 9 ′, but in the present embodiment, the dielectric 15 ′ is provided between the magnetic shield layer 3 and the electrode 9 ′ and between the magnetic shield layer 10 and the electrode 9. It is provided to form a capacitor. In this example, the capacitance of each capacitor was 50 pF. The present embodiment is suitable for narrowing the gap because the structural step is smaller than that of the fourth embodiment. Further, since no capacitor is formed between the electrodes themselves, flexibility of capacitance setting is high due to the shapes of the magnetic shield layers 3 and 10, and the magnetic shield layer 3 and the electrodes 9 '
It is also possible to set the electrostatic capacitance of 1 and the electrostatic capacitance of the magnetic shield layer 10 and the electrode 9 to different values. The principle of operation is the same as in the fourth embodiment.

<Embodiment 7> FIG. 10 is a perspective view of a magnetoresistive head according to a seventh embodiment of the present invention. While the resistances are formed between the electrodes 9 and 9 ′ in the first and fifth embodiments, the shield 3 and the electrodes 9 ′ and the shield 10 are used in the present embodiment.
A resistor having a resistance value 10 times the resistance value of the magnetoresistive effect element portion 6 is provided between the electrode 9 and the electrode 9. This embodiment is the fifth embodiment
Since the structural step is smaller than that, it is suitable for narrowing the gap. Further, since no resistance is formed between the electrodes themselves, the flexibility of setting the resistance value is high due to the shapes of the shields 3 and 4, and the resistance values of the shield 3 and the electrode 9'and the shield 10 are high.
The resistance value of the electrodes 9 and 9 can be set to different values. The operation principle is the same as that of the fifth embodiment.

In each of the above embodiments, one type of capacitor, resistor or bidirectional diode is provided between the electrodes, or a capacitor or resistor is provided between the electrode and the magnetic shield layer. A plurality of types of magnetoresistive effect magnetic heads may be provided.

<Embodiment 8> FIG. 11 is a schematic view of an embodiment of the magnetic disk device of the present invention. A plurality of magnetic disks 31 are attached to a spindle shaft in a head disk assembly 33, and are rotated at high speed by a medium drive system (motor) 34. This magnetic disk 31
The magnetoresistive effect magnetic head 14 manufactured in any of the above examples is arranged on the magnetic recording surface of No. 1 and one of them functions as a servo head. The magnetoresistive head 14 is moved in a substantially radial direction of the magnetic disk by a head drive system 35 via an actuator 32. Further, the present apparatus includes a magnetoresistive effect magnetic head 1.
4, a recording and reproducing system 36 for recording and reproducing data,
A signal processing system 37 for processing the signal, a control system 38 for controlling these and the above drive systems, a device I / F section 39 for exchanging data with a host device, and the like are provided.

FIG. 13 is a mounting diagram of the magnetoresistive magnetic head in a magnetic disk device. The magnetoresistive magnetic head is combined with an inductive head for writing and is mounted on the slider 22. Slider 2
2 is supported by a support 23 and held on the magnetic disk 21. A transmission line 25 that transmits an electric signal from the slider 22 is formed on the support body 23. One end of the transmission line 25 is an electrode terminal of the slider 22, and the other end sends a write signal to the inductive head,
The read / write IC 26 receives a reproduction signal from the magnetoresistive magnetic head. In the case of a 3.5-inch disk, the length of this transmission line 15 is 42 mm or less.
It is 30 mm or less for devices of inches or less. The input capacity of the read / write IC 26 of this embodiment is 20.
It is pF or less, and high-speed transfer of 10 MB / s or more can be realized.

[0039]

According to the present invention, even when static electricity is suddenly applied between the electrodes on both ends of the magnetoresistive effect type magnetic head, the current flowing through the magnetoresistive effect element portion is greatly reduced instantaneously. Therefore, the magnetoresistive effect element section is protected from being destroyed by static electricity. Therefore, the reliability of the magnetoresistive effect magnetic head can be significantly improved, and the manufacturing yield thereof can be improved. Furthermore, the above effect can be expected even when the magnetoresistive head is incorporated in a magnetic disk device, and has the same effect.

[Brief description of drawings]

FIG. 1 is a plan view of a magnetoresistive effect magnetic head according to a first embodiment of the present invention.

FIG. 2 is an A- of the magnetoresistive effect magnetic head shown in FIG.
A'line sectional drawing.

FIG. 3 is a plan view of a magnetoresistive effect type magnetic head according to a second embodiment of the present invention.

FIG. 4 is a B- of the magnetoresistive effect magnetic head shown in FIG.
B'line sectional drawing.

FIG. 5 is a plan view of a magnetoresistive effect magnetic head according to a third embodiment of the invention.

FIG. 6 is a C- of the magnetoresistive effect magnetic head shown in FIG.
C'line sectional drawing.

FIG. 7 is a perspective view of a magnetoresistive effect magnetic head according to a fourth embodiment of the present invention.

FIG. 8 is a perspective view of a magnetoresistive effect type magnetic head according to a fifth embodiment of the present invention.

FIG. 9 is a perspective view of a magnetoresistive effect magnetic head according to a sixth embodiment of the present invention.

FIG. 10 is a perspective view of a magnetoresistive effect magnetic head according to a seventh embodiment of the present invention.

FIG. 11 is a schematic diagram of an embodiment of a magnetic disk device of the present invention.

FIG. 12 is a relationship diagram of a resonance frequency and a sum of capacities of a head and an IC for explaining the present invention.

FIG. 13 is a mounting view of the magnetoresistive head of the present invention in a magnetic disk device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Base insulating layer 3, 10 ... Magnetic shield layer 4, 5, 11 ... Insulating layer 6 ... Magnetoresistive effect element part 7 ... Bias film for domain control 9, 9 '... Electrode 12 ... Electrode terminal pad 13, 13 '... Resistance part 14 ... Magnetoresistive magnetic head 15 ... Capacitor part 15' ... Dielectric 16 ... Insulating layer 17 ... Diode 21, 31 ... Magnetic disk 22 ... Slider 23 ... Support 25 ... Transmission line 26 ... Read / write IC 32 ... Actuator 33 ... Head / disk assembly 34 ... Medium drive system 35 ... Head drive system 36 ... Recording / reproduction system 37 ... Signal processing system 38 ... Control system 39 ... Device I / F section

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takaka Otsu 2880 Kokufu, Odawara-shi, Kanagawa Stock company Hitachi Storage Systems Division

Claims (1)

[Claims] 1. A pair of upper and lower magnetic shield layers, a magnetoresistive effect element portion, and a pair of electrodes for detecting a voltage change due to a signal by flowing a sense current through the magnetoresistive effect element portion on a substrate. In a magnetoresistive effect magnetic head having a, between one of the pair of electrodes and one of the pair of magnetic shield layers, when a current larger than the current flowing in the magnetoresistive effect element portion flows to the electrodes, A magnetoresistive effect magnetic head characterized in that an electronic element for flowing a current is provided on the shield.