JPH0945864A - Resistance and hybrid integrated circuit device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To lessen a resistor in area and power consumption protecting it against damage when a high voltage is applied to a hybrid integrated circuit device by a method wherein the resistor and a diode are connected in parallel between a first and a second electrode. SOLUTION: A diode D is composed of a P-type impurity diffusion layer 22 and an N-type silicon substrate 21, and the equivalent circuit of a resistance element is composed of a resistor 26 and the diode D connected in parallel between a first electrode 24 and a second electrode 25. When a current is made to flow through the above resistance element, a potential difference is induced between the electrodes 24 and 25, and when a potential difference is smaller than a conduction voltage of 0.6V, a current flows through the resistor 26, and when a potential difference is above 0.6V, a current flows through the diode D. Therefore, when the resistor 26 is so designed as to be capable of standing Q voltage of 0.6V or so, a current flows through the diode D but the resistor 26 when a potential difference is above 0.6V, so that the resistor 26 is protected against damage caused by an excess current or an excess voltage.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistance element and a hybrid integrated circuit device. More specifically, the present invention relates to a resistance element used for current detection or the like, in which a resistance element is formed on a silicon substrate, and the resistance element. The present invention relates to improvement of a mounted integrated circuit device.

[0002]

2. Description of the Related Art A resistance element according to a conventional example will be described below. The resistance element is a current detection resistance element (hereinafter referred to as a current detection resistance) mounted on the hybrid integrated circuit device. For example, in the case of a hybrid integrated circuit device equipped with a motor drive circuit, if the overcurrent flows in the motor, the circuit drive is stopped to protect the motor. While
Drive control is often performed.

At this time, a current detection resistor is connected to the connection terminal of the motor, the current flowing through the motor is converted into a voltage by the current detection resistor, and this voltage is fed back to the control circuit to detect the current flowing through the motor. It was In particular, a relatively large current of several A to several tens of A flows through a current detection resistor that detects a current flowing through the motor. Therefore, as shown in FIG. 6, an adhesive resin ( A resistance element in which a copper mangaline material (3) which is an alloy of copper and manganese is formed by using 2) has been used (hereinafter, this is referred to as a copper-based resistance element).

This copper mangaline material (3) is a resistance element of a current detection resistance which requires a high accuracy because the resistance element value does not fluctuate due to a temperature rise and the resistance element value does not vary much. It is a very suitable material to be used as, but in a copper-based resistance element as shown in FIG. 3, an adhesive resin (2) is used to bond a copper mangaline material (3) onto a copper plate (1). However, there is a problem that the cost is high.

Therefore, as shown in FIG. 7, a silicon oxide film (25) is formed on a silicon substrate (24), and a copper mangaline material (26) which is a resistance element is formed thereon by sputtering. A resistance element formed by patterning into a predetermined pattern has been proposed (hereinafter referred to as a silicon-based resistance element). This is different from the one using a copper plate as the base of the resistance element, because it does not require adhesive resin, so there is no risk of thermal deterioration, and even resistance elements of the same formation area can handle large currents, and the manufacturing process of semiconductor devices Since it can be manufactured by, it has advantages such as easy manufacturing, suitable for mass production, and low cost.

FIG. 8 shows a part of a hybrid integrated circuit device using such a silicon-based resistance element as a current detection resistance. This hybrid integrated circuit device has an aluminum substrate (12).
Circuit wiring (9A, 9B, 9C) made of copper foil is formed on a thick film substrate on which an aluminum oxide film (13) and an adhesive resin (14) are sequentially formed. Circuit wiring (9
A copper plate (8) is adhered on A) by solder (7B), and silicon (6) of a resistance element (RB) having the configuration shown in FIG. 7 is adhered on it by solder (7A). The copper plate (8) is provided for heat dissipation of the resistance element (RB).

The circuit wirings (9B, 9C) are terminals for supplying a current to the resistance element (RB), and are connected to the resistance element (R).
B) One end of the copper mangaline material (26), which is a resistance element, and the circuit wiring (9B) are bonded with a bonding wire (10A), and the other end of the copper mangaline material (26) and the circuit wiring (9C). Are bonded by a bonding wire (10B). Further, both ends of the copper mangaline material (6) and the control circuit (not shown) are bonded to each other by a bonding wire (11
Bonded in C).

When a current is supplied to the resistance element (RB), the current is circuit wiring (9B) → copper mangaline material (26) →
A potential difference across both ends of the copper mangaline material (26) flows through a path such as a circuit wiring (9C) and is transmitted to a control circuit (not shown) as a voltage-converted current by a bonding wire (11C) and detected.

[0009]

However, when the resistance element shown in FIG. 7 is actually used as the current detection resistance, the following problems occur. That is, a large current flows through the resistance element used for detecting the motor current, and a high voltage is applied instead of the area.

Particularly in a hybrid integrated circuit device, there is a demand to design the area of the resistance as small as possible for the purpose of miniaturization and integration. However, if the area of the resistance through which a large current flows is made small, the element is destroyed by an overcurrent. Therefore, it is necessary to increase the resistance forming area to some extent. This has hindered integration, and increased resistance increased power consumption more than necessary.

[0011]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks of the prior art. For example, as shown in FIG. 1, a semiconductor substrate of one conductivity type and a reverse substrate formed on the surface layer of the semiconductor substrate are provided. A conductive type impurity diffusion layer, a first electrode formed on the impurity diffusion layer, a second electrode formed on the semiconductor substrate in a region other than a region where the impurity diffusion layer is formed, By providing the diode in the substrate of the chip resistor by connecting the first electrode and the second electrode and having the resistor formed on the semiconductor substrate via the insulating film, high voltage can be increased. An object of the present invention is to provide a resistance element and a hybrid integrated circuit device equipped with the resistance element, which can reduce the area where the resistance is formed and reduce the power consumption while suppressing the destruction of the resistor when applied.

According to the resistance element of the present invention, as shown in FIG. 1, the impurity diffusion layer of the opposite conductivity type is formed on the semiconductor substrate of the one conductivity type, and the impurity diffusion layers of the first and second electrodes are formed. A diode is formed between them. On the other hand, first,
Since the resistor is connected between the second electrodes, the resistor and the diode are eventually connected in parallel between the first electrode and the second electrode as shown in FIG. .

When a current is passed through such a resistance element, a potential difference is generated across the resistance element. If the potential difference is 0.6 V or less, which is the conduction voltage of the diode, a current flows through the resistance element as shown in FIG. When this potential difference becomes 0.6 V or more, the diode becomes conductive and a current flows in the diode as shown in FIG. Therefore, if the resistor is designed to withstand a voltage of about 0.6V, 0.6V
When the above is reached, the current does not flow toward the resistor, so that it is possible to prevent the resistor from being destroyed by overcurrent or high voltage. Further, since the diode is on the copper material via the solder, the heat generated by the diode can be effectively dissipated.

Further, according to the hybrid integrated circuit device of the present invention, as shown in FIG. 5, since the resistance element of the present invention is mounted, the resistance forming area is increased in order to prevent element destruction. The resistance element can be protected without taking care of it. Therefore, it is possible to reduce the area and prevent the element from being destroyed. Furthermore, compared to a resistor, a diode consumes less power even if the current value is the same. In particular, it is particularly effective in a hybrid integrated circuit device in which there is a demand for designing a resistance area as small as possible for integration.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION A resistance element according to an embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram of a resistance element according to this embodiment, and FIG. 2 is an equivalent circuit diagram thereof. In the resistance element according to the present embodiment, as shown in FIG. 1, a p-type impurity diffusion layer (22) is formed on the surface of an n-type silicon substrate (21), and a silicon oxide film (23) is formed on the surface thereof. The silicon oxide film (23) formed and selectively removing the silicon oxide film (23) on the surface of the silicon substrate (21) in the formation region of the p-type impurity diffusion layer (22) forms the first electrode (24) made of aluminum. The silicon oxide film (23) on the surface of the silicon substrate (21) in a region other than the region where the mold type impurity diffusion layer (22) is formed is selectively removed to form a second electrode (25) made of aluminum. On the silicon oxide film (23) between the electrode (24) and the second electrode (25) of
A resistor (26) made of a copper mangaline material is formed so as to be connected to the first electrode (24) and the second electrode (25).

This resistance element includes a first electrode (2) and a second electrode (2).
4, 25), a diode (D) is formed in parallel with the resistor (26) between the p-type impurity diffusion layer (22) and the n-type silicon substrate (21), and an equivalent circuit thereof is formed. As shown in FIG. 2, the resistor (26) and the diode (D) are connected in parallel. Although the diode is formed in the N-type substrate here, the N-type impurity diffusion layer may be formed in the P-type substrate, and the N-type epitaxial layer is formed on the P-type substrate. A P-type impurity diffusion layer may be formed in this shrimp layer.

When a current is passed through such a resistance element, the first,
There is a potential difference between the second electrodes (24, 25),
When the potential difference is 0.6 V or less of the conduction voltage of the diode (D), current flows through the resistor (26) as shown in FIG.
When this potential difference becomes 0.6 V or more, the diode becomes conductive and a current flows through the diode (D) as shown in FIG.

Therefore, if the resistor (26) is designed to withstand a voltage of about 0.6V, 0.6V is required.
When the above is reached, a current flows toward the diode (D) side and does not flow into the resistor (26) as shown in FIG. 4, so it is possible to prevent the resistor (26) from being damaged by overcurrent or high voltage. It becomes possible to deter. An example of a hybrid integrated circuit device equipped with the above resistance element will be shown below.

In this hybrid integrated circuit device, as shown in FIG. 5, a copper film is formed on a thick film substrate having an aluminum oxide film (32), which is an example of a first insulating film, formed on an aluminum substrate (31). First to third circuit wirings (33A, 33A) made of foil
B, 33C) are formed. First circuit wiring (33
A copper plate (35) serving as a heat sink is adhered on A) with solder (34), and a silicon substrate (21) of the resistance element shown in FIG. 1 is adhered thereon with solder (36).
The copper plate (35) is for radiating the heat of the resistance element.

Second and third circuit wiring (33B, 33C)
Is a terminal for supplying a current to the resistor (26). One end of the resistor (26) and the first circuit wiring (33B) are bonded by a bonding wire (37B), and the other end of the resistor (26) and the second circuit wiring (33C) are bonded by a bonding wire (37A). ) Is bonded with.

When a current is supplied to the resistor (RB), the current is supplied to the second circuit wiring (33B) → resistor (26) → third.
The circuit wiring (33C) of the
The potential difference across both ends of 6) is transmitted as a voltage-converted current to a control circuit (not shown) and detected. Considering the maximum current, such a resistance element is usually 0.3 to 0.4V.
The resistance value is selected so that a certain voltage is applied.
In this range, current flows toward the resistor (26) of the resistance element, but a voltage higher than that is applied for some reason,
When the diode conduction voltage of 0.6 V is exceeded, the diode conducts and a current flows toward the diode, and the resistor (2
No current flows in 6), so if the resistor (26) is designed to withstand a voltage of about 0.6V, the resistor (26) will be destroyed by overcurrent or high voltage. It becomes possible to suppress that.

In particular, in a hybrid integrated circuit device, there is a demand to design the area of the resistance as small as possible for the purpose of miniaturization and integration, but by using the above resistance element for this purpose, it is possible to prevent element destruction. Since it is possible to protect the element without taking a large resistance formation area,
This is effective because the area can be reduced and element destruction can be prevented. Further, the power consumption of the diode is smaller than that of the resistor even at the same current value, so that the power consumption can be reduced.

In the present embodiment, the copper mangaline material is used as the material of the resistor (26), but the present invention is not limited to this, and a general resistor using carbon, ceramic or the like is used. Also has the same effect. Further, in the present embodiment, when mounted on the hybrid integrated circuit device, this resistance element is used as a current detection resistance, but the present invention is not limited to this.
The same effect can be obtained by applying it to a resistor used in other places.

[0024]

As described above, according to the resistance element of the present invention, the resistor and the diode are connected in parallel between the first electrode and the second electrode. Is designed to withstand a voltage of about 0.6V, the current will not flow to the resistor when the voltage exceeds 0.6V, so the resistor may be destroyed by overcurrent. It becomes possible to deter. Moreover, since the heat dissipation effect of the diode is high, it can withstand overcurrent.

Further, according to the hybrid integrated circuit device of the present invention, since the resistance element of the present invention is mounted, the resistance element is protected even if the resistance forming area is not large in order to prevent element destruction. Since it is possible to reduce the area and prevent element destruction and further reduce power consumption, there is a demand for designing the resistance area as small as possible for miniaturization and integration. This is particularly effective in circuit devices.

[Brief description of drawings]

FIG. 1 is a cross-sectional view illustrating a resistance element according to an exemplary embodiment of the present invention.

FIG. 2 is an equivalent circuit diagram of a resistance element according to an exemplary embodiment of the present invention.

FIG. 3 is a first diagram illustrating the operation of the resistance element according to the exemplary embodiment of the present invention.

FIG. 4 is a second diagram illustrating the operation of the resistance element according to the exemplary embodiment of the present invention.

FIG. 5 is a sectional view illustrating a hybrid integrated circuit device according to an embodiment of the present invention.

FIG. 6 is a diagram illustrating a resistance element of a copper base.

FIG. 7 is a diagram illustrating a silicon-based resistance element.

FIG. 8 is a perspective view of a hybrid integrated circuit device according to a conventional example.

[Explanation of symbols]

 (21) Silicon substrate (22) Impurity diffusion layer (23) Silicon oxide film (24) First electrode (25) Second electrode (26) Resistor (31) Aluminum substrate (32) Aluminum oxide film (33A) First circuit wiring (33B) Second circuit wiring (33C) Third circuit wiring (29B) Second circuit wiring (34, 36) Solder (35) Copper plate (37A, 37B) Bonding wire

Claims (2)

[Claims] 1. A resistance element in which a resistor is formed on a semiconductor substrate via an insulating film and utilized as a chip resistor, wherein a first electrode and a second electrode contacting both ends of the resistor are provided. A resistor formed by connecting a diode formed in the semiconductor substrate to the. 2. A hybrid integrated circuit device having the resistance element according to claim 1 mounted therein.