JPH0955403A - Carrier tape for semiconductor devices - Google Patents

Abstract

(57) [Summary] [Purpose] In a carrier tape that contains and feeds semiconductor elements consisting of metal leads and plastic molded products, the pitch of the feed holes is stable, the strength of the pocket is strong, and the impact during transportation is high. Also provided is a carrier tape that allows a semiconductor element to be loosely fitted in a stable manner, has a sufficient antistatic function, has no peeling charge even when the cover tape is peeled off, and can mount the semiconductor element stably. SOLUTION: A plastic strip-shaped molded article (10) in which a pocket (1) formed by a separate process is adhered to a strip-shaped base material (2) having a transporting feed hole (21) and an opening (22), and a pedestal (3) provided in the pocket (1) is provided. The metal lead portion 6 of the semiconductor element 6 to be mounted on
A guide portion 4 for restricting the movement of the semiconductor element is raised from the side wall 37 of the pocket so that 1 does not come into contact with the pocket 1, and the surface resistivity thereof is set to not larger than 10 ¹² Ω / □.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element carrier tape for housing and supplying semiconductor elements to be mounted on home electric appliances and electronic devices, and mechanical damage and static electricity damage of the semiconductor elements during transportation, supply and mounting. Belonging to the carrier tape to prevent.

[0002]

SUMMARY OF THE INVENTION According to the present invention, the pedestal of a pocket for accommodating a semiconductor element or the peripheral portion of the upper part of the pedestal has a high dimensional accuracy, and the portion has a desired thickness and shape retention. Not only can the semiconductor element be supplied stably without being damaged by impact, but also the pedestal holes and feed holes can be molded with a stable size and pitch to provide a sufficient antistatic function. Position accuracy is good, the surface of the plastic sheet such as the part where the cover tape is heat-sealed has no unevenness, and it can be heat-sealed under stable conditions, and the winding strength is stable, and even when the cover tape is peeled off. An object of the present invention is to provide a carrier tape for a semiconductor element, which is free from peeling charge and which can be stably mounted with a semiconductor element filled in the carrier tape.

[0003]

In order to achieve the above object, in a carrier tape for a semiconductor device according to the present invention, a component pocket for accommodating a semiconductor device comprising a metal lead portion and a plastic molding portion, and at least a component pocket. In a carrier tape for a semiconductor device, which comprises a cover tape having a heat sealant layer for covering and heat-sealing the pocket on a plastic strip-shaped substrate provided with transport holes on one side at equal intervals, the semiconductor device of the component pocket portion Surface resistivity or volume resistivity near the contact is 23 ℃,
At a relative humidity of 90%, not greater than 10 ¹² Ω / □,
In addition, the pocket supports the semiconductor element so that the metal lead portion of the semiconductor element does not come into contact with the bottom and side walls of the pocket, and rises from the side wall of the pocket and does not come into contact with the metal lead portion to move the semiconductor element. With a limiting guide portion, the surface of the sealant layer of the cover tape has a surface resistivity of 23 ° C. and a relative humidity of 90% below,
It is a carrier tape for semiconductor devices, which is not larger than 10 ¹² Ω / □. The carrier tape for a semiconductor element according to claim 1, wherein the guide portion is provided in a plate shape or a rod shape. A semiconductor element carrier tape is provided in which a semiconductor element is provided with a concave air reservoir near the center of the base of the component pocket. Further, the base material of the plastic strip-shaped molded product is a plastic sheet having a thickness of 0.1 to 0.8 mm, and the component pocket formed by injection molding is formed in the component pocket opening formed in the same process as the transport feed hole. , A plate shape from the side wall of the pocket to the pedestal direction, or
It is a carrier tape for a semiconductor device having a rod-shaped guide portion. Further, a semiconductor element in which a component pocket formed by injection molding is provided in the pocket opening of a belt-shaped base material having a thickness of 0.1 to 0.8 mm in which a component pocket opening and a transport feed hole are provided at equal intervals. Carrier tape. Further, the base material of the plastic strip-shaped molded product is a conductive fine powder or conductive carbon having a particle diameter of 0.01 to 1 μm obtained by subjecting a thermoplastic resin and tin oxide, indium oxide, or zinc oxide to a conductive treatment, and a surfactant. The carrier tape for a semiconductor device comprises the conductive fine powder, or conductive carbon and a surfactant in an amount of 1 to 300% by weight based on 100 parts of the thermoplastic resin. In addition, the base material of the plastic strip-shaped molded article is a resin varnish containing conductive fine powder having a particle diameter of 0.01 to 1 μm obtained by subjecting tin oxide, indium oxide, or zinc oxide to a conductive treatment or conductive carbon and a surfactant. It is a carrier tape for a semiconductor device, which is provided by coating a dispersion-adjusted conductive coating agent on at least one side. The base material of the plastic strip-shaped molded product is a laminate of two or more layers, and at least the volume resistivity of the inner surface layer in contact with the semiconductor element is 23.
It is a carrier tape for semiconductor devices, which is not higher than 10 ¹² Ω / □ at 90 ° C. and 90% relative humidity. In addition, the component pocket is made of a thermoplastic resin and tin oxide, indium oxide,
Particle size of metal oxide such as zinc oxide that has been subjected to conductive treatment 0.0
1 to 1 μm of conductive fine powder or conductive carbon and a surfactant, and the conductive fine powder or conductive carbon and surfactant is 1 to 300 per 100 parts of the thermoplastic resin.
It is a carrier tape for semiconductor devices, which is an injection-molded product containing 50% by weight. In addition, at least one surface of the component pocket has a conductive fine powder having a particle diameter of 0.01 to 1 μm obtained by subjecting a metal oxide of tin oxide, indium oxide, or zinc oxide to a conductive treatment or conductive carbon and a surfactant to a resin. It is a carrier tape for a semiconductor device in which a conductive coating agent dispersed and adjusted in a varnish is provided on at least one side.

[0004]

The carrier tape for semiconductor device of the present invention is prepared by injection-molding a molded article which can be adhered to a plastic strip-shaped base material having a feed hole and a pocket opening formed in the same step on a plastic sheet at room temperature. It is formed by providing a pocket. Therefore, it is a carrier tape having both the shape-stable pocket and the flexibility of the dimensionally stable strip-shaped substrate sheet, and can be wound. That is, since the pocket is an injection molded product, the side wall of the pocket, the recess of the pocket, the pedestal, and the guide portion have stable dimensional accuracy and thickness accuracy. And deformation of the side wall of the pedestal, guide part and pocket due to impact,
Bending can be eliminated. The semiconductor element housed in the pedestal is stable, and the loose fitting range is regulated by the guide portion even during the transfer, so that static electricity due to friction or damage is prevented. (In this specification, the movement range in which the semiconductor element is restricted by the guide portion is referred to as a loose fitting range.)

[0005]

2. Description of the Related Art Conventional carrier tapes for semiconductor devices are
A plastic sheet is thermoformed (pressure molding, vacuum molding or pressure molding) with a component storage pocket, a pedestal, convex parts around the pedestal and feed holes for transportation, and is used in a long winding state. ing. In the case of IC or LSI carrier tape, the circuit is short-circuited due to static electricity generated by friction or contact between the semiconductor element and the carrier tape during transfer, or mechanical damage to the metal lead portion due to contact with the side wall of the pocket. In order to prevent the contact between the pocket and the bottom of the semiconductor element, a pedestal or a rib is provided to fix the semiconductor element.

The carrier tape is molded by a thermoforming method, that is, after heating a sheet, a component pocket is formed in a mold by a pressure forming method, a vacuum forming method or a pressure forming method. Further, the pedestal holes and the feed holes are formed by any method such as before heating the sheet, at the same time with the pocket for parts in the mold, after machining the pocket, and the like. Alternatively, manufacturing of a carrier tape having a pedestal by an injection molding method has been considered.

[0007] However, the carrier tape formed by thermoforming has a large stretch ratio, so that there is a limit to the shapeability of the sheet, and holes are formed in the side wall of the pocket, the pedestal or the upper peripheral portion of the pedestal, and the shapeability is poor. Since there is a limit, the machining dimensional accuracy of the pedestal of the pocket or the upper peripheral portion of the pedestal may be poor, or the thickness of that portion may be thin. Therefore, there is a problem that the shape retaining property is poor and the component is likely to be deformed or damaged by an impact, and it is difficult to hold the component at a predetermined position.

Further, after the pedestal holes and the feed holes are provided in the sheet, thermoforming of the pocket is performed by shrinking the sheet by heating, variation in the hole diameter due to expansion, variation in the pitch between the holes, and variation in the feeding hole and the pocket. Is likely to cause dimensional changes,
When components are mounted with such a carrier tape, there has been a problem that the positional accuracy and timing of the feed are deviated and stable conveyance cannot be performed.

In the processing of the heating sheet in the mold, when the molded product is small, the distance between the pocket and the hole becomes short, and when the mold is manufactured by the machining method, the mold has high precision and high hardness. There is a problem that the material cost is required and the die cost is increased. When forming holes after forming the pockets, it is difficult to determine the positions of the feed holes and the pockets, the position of the holes easily fluctuates, and the positional accuracy is unstable. When mounting, there is a problem in that the position accuracy timing of the feed is deviated and stable conveyance cannot be performed, and the position is deviated when the substrate is mounted.

In the thermoforming in which the heating sheet is fed into the die and formed, the die clamping trace of the die may form an uneven pattern on the surface of the carrier tape between cycles. When the cover tape is heat-sealed in this uneven pattern, the sealing strength is different due to the difference in heat-sealing pressure, resulting in uneven peeling strength. there were.

The semiconductor element has a structure in which an electric circuit is embedded in a resin, and when the semiconductor element and a plastic which is a carrier tape contact and rub against each other, static electricity is generated, and the static electricity short-circuits the electric circuit to damage it. There was a problem to do. Alternatively, there is a problem that the electric circuit is short-circuited and damaged due to static electricity (peeling electrification) generated when the cover tape is peeled off.

In the production of a carrier tape by the injection molding method, it is difficult to mold a carrier tape having a thickness of 0.1 mm or less due to the characteristics of the injection molding resin and the structure of the mold. Also, from the characteristics of the resin for injection molding, a plastic band-shaped molded article manufactured by the injection molding method is filled with semiconductor elements, and heat sealed with a cover tape, the flexibility between the pockets is poor,
In the case of the rolled-up shape, there is a problem that it cannot be rolled up so that it can be used for mounting because it is easily broken.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION As shown in FIG. 1 (B), a carrier tape for a semiconductor device according to the present invention is produced by injection molding and a belt-shaped substrate 2 having a feed hole 21 and an opening 22 for a pocket. This is a carrier tape made of a plastic band-shaped molded product 10 in which the above-mentioned pocket 1 and the pocket 1 are integrally bonded by an adhesive portion 16. The pocket 1 has a pedestal 3 and a guide portion 4 that rises from the side wall 37 of the pocket 1 and defines a loose fitting range of the semiconductor element so as not to contact the metal lead portion 61. The semiconductor element 6 is shown in FIG.
As shown in (D) and (E), the metal lead portion 61 is placed on the pedestal 3 in the recess 12 of the pocket in a suspended state, loosely fitted in a predetermined position by the guide 4, and sealed by the cover tape 7. Is.

The strip-shaped substrate 2 is selected in consideration of film forming suitability, hole processability, and heat sealing property with the molding resin of the pocket 1 and the cover tape 7. Specifically, polypropylene, polyethylene, ethylene / vinyl acetate copolymer, ethylene / acrylic acid copolymer, ethylene / acrylic acid ester copolymer, ionomer, saponified ethylene / vinyl acetate copolymer, polyvinyl chloride, polyester , Polycarbonate, polystyrene, ABS resin, and the like, and mixtures thereof. Then, if necessary, a tackifier, a wax, an inorganic or organic filler, a lubricant and the like can be added. The thickness depends on the material, but is preferably 0.1 to 0.8 mm, preferably 0.1 to 0.6 mm.
It is a stretched or unstretched sheet of mm. 0.1 mm
If the thickness is less than the following, the carrier tape may have low rigidity, and may be cut by high tension when it is conveyed at high speed or may be bent by the load of the semiconductor element when it is filled with a semiconductor element, resulting in lack of conveyance aptitude. On the other hand, when the thickness is 0.8 mm or more, the rigidity becomes too strong and the flexibility is lost, and it becomes impossible to wind a long length. Although the width of the sheet is determined by the width of the carrier tape, the pockets 1 are additionally formed by forming openings for pockets in multiple rows of about 300 mm width, and then slitting is performed on a desired row.

The charging treatment of the strip-shaped substrate can be carried out by kneading the antistatic agent into the substrate resin or by coating the surface of the film-forming sheet or the surface of the injection-molded pocket.
The following are mentioned as an antistatic agent. Ketjen black, acetylene black, furnest black, etc. have a particle size of 0.02 to 0.150 μm,
Conductive carbon with a surface area of 40 m ² / g or more. A conductive fine powder having a primary particle size of 0.01 to 1 μm obtained by subjecting a metal oxide such as tin oxide, indium oxide, or zinc oxide, a metal sulfide, or a sulfate to a conductive treatment such as doping. A conductive fine powder mainly composed of a fibrous or powdery metal having a particle diameter of 0.01 to 10 μm, such as copper, iron, aluminum, nickel and gold. Anionic, cationic, nonionic, and zwitterionic surfactants. Fatty acid derivative, tetrafunctional silicon partial hydrolyzate, bis-
Ammonium-based organic semiconductor. Among the above antistatic agents, metal oxides, surfactants or conductive carbons are preferable from the viewpoints of static electricity removal characteristics and non-staining property to semiconductor elements.

The treatment with the antistatic agent is carried out by a kneading method in which the resin is mixed in the film-forming step, or by applying the film-formed sheet. The kneading method is resin 100
Addition of 1 to 300% by weight of antistatic agent to parts by weight,
It is particularly preferable to add 5 to 50% by weight. When the antistatic agent is less than 1% by weight, its surface resistivity is 23
10 ¹³ Ω / □ or higher at 90 ° C and 90% relative humidity (hereinafter, the surface resistivity measurement is the value measured at 23 ° C and 90% relative humidity), 5000 V at 23 ° C and 15% relative humidity
The decay time from 5 to 500V (charge decay time) is 5 seconds or more (the charge decay time is measured under the above conditions) and the static electricity removal effect is not sufficient. The circuit of the electronic component may be short-circuited or damaged by static electricity generated by contact between the semiconductor element and the pocket or static electricity generated when the cover tape is peeled off. On the other hand, if the antistatic agent exceeds 300% by weight, not only the melt viscosity at the time of film formation increases and the fluidity decreases, but also when the film is formed, it becomes brittle and the required strength cannot be maintained.

The coating liquid used in the coating method is prepared by dispersing an antistatic agent in a varnish obtained by dissolving or dispersing synthetic resin as a binder. The binder is polyester, polyurethane, polystyrene, vinyl chloride / vinyl acetate copolymer, polyvinyl butyral, methyl cellulose, ethyl cellulose, ethylene / vinyl acetate copolymer, acrylic resin, silicone resin varnish, polycarbonate or the like, and modified products thereof. It is also possible to use a mixture, or an acrylate or silicone which is a thermosetting or ionizing radiation curable resin. The solvent that dissolves or disperses the binder is not limited to ordinary organic solvents such as esters, hydrocarbons, ketones, and alcohols, but is also used as a solution or dispersion using water. The amount of the antistatic agent added to 100 parts by weight of the binder is 1
It is preferable to add ˜300 wt%, especially 5 to 150 wt%. When the antistatic agent is less than 1% by weight, the surface resistivity is 10 ¹³ Ω / □ or more, and the charge decay time is 5 seconds or more, the static electricity removing effect is not sufficient, and the circuit of the electronic component is It may be short-circuited or damaged. Further, when the antistatic agent exceeds 100% by weight, the adhesion and strength of the coating film may be deteriorated and the coating film may fall off. The thickness of the coating film can be appropriately set so that the surface resistivity is 10 ¹² Ω or less / □ or less, but it is limited by the cost and the coating machine, and is 0.1 to 100 μm, preferably 1 ~ 50
μm. Further, when the adhesion of the coating film to the substrate is not strong, urethane-based, isocyanate-based, polyethyleneimine-based, etc. can be used as a primer on the coated surface of the substrate.

The above-mentioned strip-shaped substrate may be composed of a single layer or a multilayer laminate of two or more layers. Multilayer is cost,
Mechanical properties of the base material (elongation, rigidity, flexibility, tensile strength, tear strength, etc.), thermal characteristics (heat resistance, cold resistance, softening temperature, etc.), environmental characteristics (chemical resistance, solvent resistance, water resistance) Properties, radiation resistance, light resistance, wasteability, etc.), gas permeation characteristics (oxygen barrier property, water vapor permeability, inorganic or organic gas barrier property, etc.), water absorption property, etc. can be selected for the configuration.

The materials constituting the multi-layer laminate are thermoplastic resins such as polyester, polyurethane, polystyrene,
Vinyl chloride / vinyl acetate copolymer, cellulose derivative,
Ethylene / vinyl acetate copolymer, ethylene / acrylic acid copolymer, ethylene / acrylic ester copolymer, ionomer, polyvinyl alcohol, saponified ethylene / vinyl acetate copolymer, acrylic resin, silicone resin, polycarbonate only Alternatively, a film of cellophane or the like can be used in addition to unsaturated polyester, thermosetting resin, or acrylate or silicone which is an ionizing radiation curable resin. The multilayer laminate is obtained by laminating or applying single layer sheets of the above materials. Further, at least any one layer of the sheet or one layer in which the coating film contains an antistatic agent can be combined.

The surface resistivity of the electrically conductive layer contained in the multilayer laminate preferably has a charge decay time of 5 seconds or less. When the surface resistivity is 10 ¹² Ω / □ and the charge decay time exceeds 5 seconds, the effect of removing static electricity is not sufficient, and the circuit of the electronic component may be short-circuited or damaged. The thickness of the unit layer constituting the multi-layer laminate is preferably 0.1 to 600 μm, and if the thickness is 0.1 μm or less, the characteristics of the constituted layer cannot be obtained. It becomes difficult to wind the coil without impairing its flexibility.

The plastic band-shaped substrate can be formed into a film by a known method. For example, the film is formed by stretching or unstretching such as T-die method, circular die method, solvent melt casting method, calender method and the like. The multi-layer laminate is formed by a thermal lamination, a hot-melt adhesive, a dry lamination method using an isocyanate adhesive, or a thermoplastic resin for an isocyanate-based or imine-based primer layer of two or more films or sheets by a T-die method. It can be obtained by a usual method such as a melt extrusion coating method and a coextrusion film forming method.

As a film forming method by coating, a gravure plate,
Or direct or reverse coating such as diagonal printing, roll coating, comma coating, air knife coating, etc., as well as silk printing method,
Known coating and printing methods such as a transfer printing method, a dry offset printing method, and a pad printing method can be used.

The pocket formed by the injection molding method is preferably selected from materials that are heat-sealed with the plastic which is a component of the belt-shaped base material in consideration of cost, moldability and mechanical properties. For example, polypropylene. , Polyvinyl chloride, polyester, polycarbonate, polystyrene, ABS resin, polyurethane, vinyl chloride / vinyl acetate copolymer, ethylene / vinyl acetate copolymer, ethylene / acrylic acid copolymer, ethylene / acrylic acid ester copolymer, Ionomer, polyvinyl alcohol, saponified ethylene / vinyl acetate copolymer and the like are used. Then, if necessary, a wax, an inorganic or organic filler, a lubricant or the like can be added. With a pocket,
When fixing with a plastic strip base material by fitting,
It is possible to freely select from materials other than heat-weldable materials. The thickness of the pocket is determined by the shape and weight of the semiconductor element to be filled, and an excessive thickness should be avoided and is 3 mm at maximum.

The charging treatment of the resin used in the injection molding method can be carried out by kneading the antistatic agent or coating the surface of the molded product. As the antistatic agent used for kneading, the same ones as those used for the plastic belt-like substrate can be used, and the following ones can be mentioned. Conductive carbon having a particle size of 0.02 to 0.15 μm and a surface area of 40 m ² / g or more, such as Ketjen black, acetylene black, and furnest black. A conductive fine powder having a primary particle size of 0.01 to 1 μm obtained by subjecting a metal oxide such as tin oxide, indium oxide, or zinc oxide, a metal sulfide, or a sulfate to a conductive treatment such as doping. A conductive fine powder mainly composed of a fibrous or powdery metal having a particle diameter of 0.01 to 10 μm, such as copper, iron, aluminum, nickel and gold. Anionic, cationic, nonionic, and zwitterionic surfactants. Fatty acid derivative, tetrafunctional silicon partial hydrolyzate, bis-ammonium organic semiconductor. Among the above antistatic agents, metal oxides, surfactants or conductive carbons are preferable from the viewpoints of static electricity removal characteristics and non-staining property to semiconductor elements.

The treatment with the antistatic agent is carried out by a kneading method which is mixed in the injection molding process, or by coating the film-formed sheet. In the kneading method, it is preferable to add the antistatic agent in an amount of 1 to 3% by weight, particularly 5 to 50% by weight, based on 100 parts by weight of the resin. When the antistatic agent is less than 1% by weight, the surface resistivity is 10 ¹³ Ω / □
As described above, the decay time (charge decay time) is 5 seconds or more, the effect of removing static electricity is not sufficient, and the circuit of the electronic component is generated by static electricity generated when the semiconductor element is in contact with the pocket or when the cover tape is peeled off. , Short circuit or damage may occur. When the antistatic agent exceeds 300% by weight,
Not only the melt viscosity at the time of injection molding increases and the fluidity decreases, but also the injection molded product becomes brittle and the required strength cannot be maintained.

The coating solution for the pocket is prepared by adding an antistatic agent to a varnish obtained by dissolving or dispersing synthetic resin as a binder. Binders include polyesters, polyurethanes, polystyrenes, vinyl chloride / vinyl acetate copolymers, cellulose derivatives, ethylene / vinyl acetate copolymers, acrylic resins, silicone resin varnishes, polycarbonates, and modified products of these. Alternatively, a thermosetting or ionizing radiation-curable resin such as acrylate or silicone can be used. The solvent that dissolves or disperses the binder is not limited to ordinary organic solvents such as esters, hydrocarbons, ketones, and alcohols, but is also used as a solution or dispersion using water. The addition amount of the antistatic agent to 100 parts by weight of the binder is preferably 1 to 300% by weight, particularly preferably 5 to 50% by weight. When the antistatic agent is less than 1% by weight, the surface resistivity is 10 ¹³ Ω / □ or more and the charge decay time is 5
It is more than a second, the effect of removing static electricity is not sufficient, and the circuit of the electronic component may be short-circuited or damaged. Further, when the antistatic agent exceeds 300% by weight, the adhesion and strength of the coating film may be deteriorated and the coating film may fall off. The thickness of the coating film can be appropriately set so that the surface resistivity is 10 ¹² Ω / □ or less, but it is limited by the cost and the coating machine, and is 0.1 to 100 μm, preferably 2 to 50μ
m. Further, as a coating method, in addition to spray coating and the like, known coating methods such as silk printing method, transfer printing method, dry offset printing method, pad printing method and the like are effective when a molded product is used.

The method of adhering the pockets formed on the belt-shaped base material 2 by injection molding can be appropriately selected by a known method. Preferably, a pocket previously formed by an injection molding method is bonded to the bonding portion of the pocket opening provided on the strip-shaped substrate by an ultrasonic bonding method,
It is fixed by using a high-frequency bonding method, a heat sealing method, a chemical bonding method using an adhesive or a solvent, or a physical bonding method such as fitting. Alternatively, a method is used in which a strip-shaped base material having a pocket opening portion is previously mounted on an injection molding die, and the pocket is formed, and at the same time, melt bonding is performed at the bonding portion.

The cover tape used in the band-shaped molded article of the present invention is a conventionally used base sheet, which has a heat-sensitive seal adhesive layer, an adhesive seal-type adhesive as an adhesive seal layer to the band-shaped base material. A layer, an ionizing radiation-curable seal adhesive layer, or a microcapsule type seal adhesive layer may be used. A particularly preferable adhesive layer is provided with a heat-sensitive adhesive heat sealant layer. The basic layer structure of the cover tape is exemplified as follows. Base sheet / adhesive layer / intermediate layer / heat sealant layer Base sheet / adhesive layer / intermediate layer / adhesive layer / biaxially stretched film layer / heat sealant layer Base sheet / heat sealant layer In addition to uniaxially stretched films such as polyester, polypropylene and nylon, biaxially stretched films and unstretched films, synthetic paper can be used. The intermediate layer includes polyolefin, polystyrene, ethylene / vinyl acetate copolymer, ethylene / acrylic acid copolymer, ethylene / acrylic acid ester copolymer, ionomer, polyester, and modified products or mixtures thereof.

The heat sealant layer is made of polyurethane, polyester, acrylic resin, vinyl chloride / vinyl acetate copolymer, ethylene / vinyl acetate copolymer, ethylene.
It can be appropriately selected from acrylic acid copolymers, ethylene / acrylic acid ester copolymers, ionomers, silicones and the like. Then, in order to impart antistatic properties to the cover tape, an antistatic agent similar to the above-mentioned plastic strip-shaped substrate is added to at least one of the constituent layers. Furthermore, a surfactant or a bisammonium-based organic semiconductor layer can be formed on the surface of the heat sealant layer. There are the following types of cover tape peeling,
Desirably, delamination is performed and the peel strength is 100 to
It is desirable that the width is 1000 g / 15 mm and the difference between the maximum value and the minimum value at the time of peeling is less than 50 g / 2 mm width. Interfacial peeling type that peels between the heat sealant layer and the plastic strip base material. A cohesive failure type that breaks and peels inside the heat sealant layer. Delamination type that peels between the heat sealant layer and the intermediate layer or the biaxially stretched film layer.

A method of manufacturing the carrier tape for a semiconductor device of the present invention will be described with reference to the drawings. FIG. 1 (B)
The feed hole 21 and the opening 22 for forming a pocket, which is a plastic molded product, are wound on the plastic belt-shaped substrate 2 by a method such as pressing by a punch or a die, a Thomson blade or a cutter blade, or laser processing. Done in. Then, in the supply unit of the known injection molding machine provided with the winding supply and winding unit, the feed hole 21 and
The plastic strip base material 2 provided with the pocket openings 22 is inserted into the injection molding machine, positioned by the feed holes 21 and / or the pocket openings 22, and the molten resin is injected into the cavity to inject the plastic strip base material. The pocket 1 is formed on the material 2 and the band-shaped base material and the pocket are fused at the bonding portion 16 at the end of the opening 22 of the band-shaped base material 2 and the upper part of the pocket as shown in FIG. To form a band-shaped molded product 10. At this time, care should be taken so that the molding resin does not adhere to the adhesive surface of the strip-shaped substrate 2 with the cover sheet. Then, the strip-shaped molded product 10 is wound by forming a slitter on a desired row and winding it up. In addition, the band-shaped base material 10 is provided with the feed hole 21 and the opening 22 for the pocket by a press mold composed of a cavity and a core, and injection molding is carried out continuously with the process to form the band-shaped molded product 10. You can also

The pocket 1 formed by the injection molding method is shown in FIG.
As shown in FIG. 2, the pedestal 3 on which the semiconductor element 6 is mounted and the metal lead portion 61 can be accommodated in the recess 12 of the pocket 1 in a suspended state. Then, in order to prevent bending, breaking, and chipping of the metal lead portion 61, the plate-shaped or rod-shaped guide portion 4 is formed from the side wall 37 of the pocket toward the pedestal 3. The pocket 1 has a space 12 in which the metal lead portion 61 of the semiconductor element does not contact the side wall 37 of the pocket and the pedestal 3. 2 (B) and (C)
As shown in (D) and (D), the plate-shaped or rod-shaped guide portions 41, 42, and 43 formed on the side wall of the pocket have a loose fitting range 63 when the semiconductor element 6 is stored at the semiconductor element storage position shown in FIG. That is, the movement is regulated within the range of the dimension A shown in FIG. 3, and the metal lead portion 61 and the side wall 37 are not brought into contact with each other.

The dimension A of the loosely fittable range of the semiconductor element shown in FIG. 3 is 0.5 mm to 3.0 mm.
The dimension of the guide B that holds the corner of the semiconductor element is preferably 0.5 mm or more and 5.0 mm or less.
The angle θ that supports the corner of the semiconductor element formed by B is preferably in the range of 90 ± 30 °. If the dimension A of the loose fitting range is more than 3.0 mm, the movement range of the semiconductor element may be largely changed and the semiconductor element may not be installed at a predetermined position of the electronic component, and a pocket size is required. It becomes bigger than that. And 0.
If the thickness is less than 5 mm, it is difficult to control the position when the semiconductor element is stored in the pocket, and the guide portion 41, 42 or 43 may come into contact with the semiconductor element and fall off. If the size of the guide B exceeds 5.0 mm, it may not be able to be stored in a predetermined position when the semiconductor element is stored, and may fall off, or it may be difficult to take out the semiconductor element when it is mounted on an electronic component and the semiconductor device cannot be installed in the predetermined position. is there. Further, when the angle θ that supports the corner of the semiconductor element formed by the guide B exceeds 120 °, the position of holding the corner of the semiconductor element changes greatly, and the semiconductor element cannot be installed at a predetermined position of the electronic component. If the angle is less than 60 °, the semiconductor element may not be stored in a predetermined position when it is stored, and may fall off, or it may be difficult to remove the semiconductor element when it is installed in an electronic component, and the semiconductor element may not be installed in a predetermined position. Further, the width C of the guide is preferably set to the minimum width that maintains the strength of the guide, and is not particularly specified.

The tip of the metal lead portion 61 of the semiconductor element shown in FIGS. 2B, 2C and 2D and the side wall 37 of the pocket.
The gap distance between and is set according to the size of the metal lead portion 61 of the semiconductor element. The distance between the side wall 37 and the tip of the metal lead portion 61 is 0.5 to 20 mm, preferably 2 to 10 mm.

The cross-sectional shape of the guide portion 4 shown in FIG. 3 is not particularly specified, but it does not matter as long as it withstands the resistance caused by the movement of the semiconductor element. The dimension B is 0.5 to 5.0 mm
It should be in the range of.

The guide portion 4 is raised from the side wall of the pocket portion in order to prevent the metal lead portion from being bent or broken due to contact with the side wall 37 of the pocket during transportation and supply of the semiconductor element. The range of loose fitting is limited by guiding from the corners and side surfaces.

The guide parts are installed in the corner type plate-shaped guide part 41 shown in FIG. 2B, the corner type bar-shaped guide part 42 shown in FIG. 2C, and the side wall type plate shown in FIG. 2D. The guide portion such as the guide portion 43 and the side wall are integrally formed.

The guide portion is a side bottom forming die which is provided from the bottom portion 33 and side wall 37 of the pocket shown in FIG. 4 (A), and a side forming die which is provided from the side wall 37 of the pocket shown in FIG. 4 (B). The guide portion 47, a side medium-thickness guide portion 48 provided from the side wall 37 of the pocket shown in FIG. 4C and having a thickness substantially equal to that of the semiconductor element, and FIG.
It can be formed in the side thin guide portion 49 which is provided from the side wall 37 of the pocket shown in (D) and is thinner than the semiconductor element.

The semiconductor element housed in the carrier tape is
The metal lead portion 61 may come into contact with the side wall 37, the bottom portion 33, or the pedestal 3 and be broken due to movement such as jumping, tilting, or rotation during the transportation. Further, the amount of electrostatic charge generated by friction is proportional to the work function (number of contacts, number of frictions, pressure, contact area, etc.). Therefore, if the number of times of friction, the number of times of contact, and the contact pressure are the same, the amount of static electricity generated increases when the contact area between the semiconductor element and the pedestal is large, and dust intrusion and adhesion of dust to the metal leads As a result, the function of the semiconductor element is impaired and the electric circuit is short-circuited due to the generated electrostatic load, and the function of the semiconductor element is lost.

In order to reduce the amount of static electricity generated,
It is effective to reduce the contact area. In order to reduce the contact area, as a method to prevent the generation of air layer,
The pedestal 3 shown in FIG. 7 is provided with a recess 5 which is a portion that does not come into contact with a semiconductor element, and the pedestal 3 shown in FIG.
It is preferable to provide 1 for degassing.

The following method is effective for specifically forming the pedestal hole 31. As a hole for accommodating the metal lead portion 61 so as not to contact the side wall 37, the pedestal 3, and the bottom portion 33 when accommodating the semiconductor element, a pedestal hole 31 penetrating the pedestal 3 shown in FIG. To release air. A method of forming a flow path type air reservoir 51 of air radially in the central direction of the pedestal 3 as shown in FIG. A method in which a recess 5 is formed near the center of the pedestal shown in FIG. 7 to provide an air reservoir 52. In this case, it is effective to provide the air reservoir recess 52b by inclining the air reservoir 52 toward the central portion so as to be deeper as shown in the figure. The step depth 52h of the added recess is 0.05 to 10 m.
m, preferably 0.1 to 5 mm. Step depth 52h
Is less than 0.5 mm, the effect of accumulating an air layer is small, and if it exceeds 5 mm, the pocket becomes deeper,
More molding material, cost and side wall of the whole pocket 3
7 becomes large and deep, and it becomes difficult to wind the band-shaped molded product. As shown in FIG. 8, a method of matting the surface of the pedestal to provide a rough surface type air reservoir 53 which is a flow path of air. The matting process has a center line average roughness of 1.
The maximum height is 0 mm or less and the maximum height is 2.0 mm or less. In the waviness curve, the center line waviness is preferably 1.0 mm or less and the maximum waviness is preferably 2.0 mm or less. A method for forming an air reservoir 54 in the shape of a groove and a groove made up of a convex portion 54a and a concave portion 54b shown in FIG. 9 on the surface of the base.

Recessed type air reservoir 5 shown in and above.
2. In the flow path type air reservoir 51 and the air reservoir 54 formed by the concave and convex grooves, the area of the contact portion 66 between the semiconductor element 6 and the pedestal 3 is also small, the amount of generated electrostatic charge is small, and dust is prevented from entering. Moreover, it is effective in protecting the function of the semiconductor circuit. Further, the pedestal hole 31, the rough surface type air reservoir 53, the flow channel type air reservoir 51, the recess type air reservoir 52, the air reservoir 54 by the concave and convex grooves, and the like are appropriately combined to produce a synergistic effect. For example, (a) the pedestal 3 shown in FIG. 10 in which the pedestal hole 31 and the flow path type air reservoir 51 are combined. (b) The pedestal 3 shown in FIG. 11 in which the pedestal hole 31 and the recessed air reservoir 52 are combined. (c) The pedestal 3 shown in FIG. 12 in which the pedestal hole 31 and the rough surface type air reservoir 53 are combined. (d) Pedestal hole 31, concave air reservoir 52 and rough surface air reservoir 5
The pedestal 3 shown in FIG. (e) The pedestal 3 shown in FIG. 14 in which the pedestal hole 31 and the flow path type air reservoir 51 are combined. (f) The pedestal 3 shown in FIG. 15 in which the pedestal hole 31 and the uneven air reservoir 54 are combined. (g) Pedestal hole 31, recessed-type air reservoir 52, and channel-type air reservoir 5
The pedestal 3 shown in FIG. 16 in combination with 1. (h) Pedestal hole 31, rough surface type air reservoir 53 and uneven air reservoir 5
Pedestal 3 shown in FIG. 17 in combination with 4.

[0042]

[Effect] The carrier tape for a semiconductor device of the present invention has good productivity not only by kneading conductive fine powder but also by applying it. The carrier tape for a semiconductor device of the present invention is formed by combining a plastic strip-shaped substrate having a feed hole and a pocket opening formed in a plastic sheet at room temperature and an injection-molded pocket with good molding accuracy in the same step. Has been done. Therefore, it is possible to configure the winding of the carrier tape having flexibility of the pocket having shape stability and the sheet having dimension stability. Further, the convex pedestal on which the semiconductor element formed in the pocket is mounted can be freely formed. The carrier tape for semiconductor device of the present invention is an injection-molded resin that can be heat-melt-bonded to a strip-shaped base material containing plastic in which feed holes and pocket openings are formed in the same step on a plastic sheet at room temperature by the same process. Is used to form a pocket. Therefore, it is a carrier tape having both the shape-stable pocket and the flexibility of the dimensionally stable strip-shaped substrate sheet, and can be wound. That is, since the pocket is an injection molded product,
The dimensional accuracy and thickness accuracy of the side wall of the pocket, the recess of the pocket, the pedestal, and the guide are stable. Further, it is possible to eliminate the deformation and bending of the side wall of the pedestal, the guide portion and the pocket due to the impact. The semiconductor element accommodated in the pedestal is stable and its loose fitting range is regulated even during transfer to prevent generation of static electricity due to friction and damage. The guide part provided from the side wall of the pocket has an effect of preventing the semiconductor device from being damaged due to static electricity or contact between the metal lead part and the side wall by loosely fitting the semiconductor device. The position accuracy of the pedestal hole formed by injection molding and the processing of the feed hole performed on the plastic sheet at room temperature are stable in terms of hole size and pitch accuracy. The heat sealing between the strip-shaped base material processed at room temperature and the cover tape has the effect of stabilizing the peel strength without any uneven pattern on the surface. The carrier tape has good productivity not only by kneading conductive fine powder but also by applying it.

[Brief description of drawings]

FIG. 1 (A) is a conceptual view showing a plane of a strip-shaped substrate. (B) It is a perspective view showing a plane of a belt-shaped molded product. (C) It is a conceptual diagram which shows the plane of the strip-shaped molded article which accommodated the semiconductor element. (D) It is a conceptual diagram which shows the XX cross section of the strip | belt-shaped molded article which accommodated the semiconductor element. (E) It is a conceptual diagram which shows the YY cross section of the strip | belt-shaped molded article which accommodated the semiconductor element.

FIG. 2A is a conceptual sectional view showing a housed state of a semiconductor element loosely fitted in a guide portion. FIG. 6B is a plan view showing a corner type plate-shaped guide portion and a loose fitting position. (C) It is a plan view showing a corner type rod-shaped guide portion and a loose fitting position. (D) A plan view showing a side wall type guide portion provided on the side portion and a loosely fitting position.

FIG. 3 is a plan view showing a dimensional relationship between a pocket and a guide portion.

FIG. 4 is a conceptual diagram showing a cross section of a (A) side bottom molding die guide portion. It is a conceptual diagram which shows the cross section of (B) side part shaping die guide part. It is a conceptual diagram which shows the cross section of (C) side part middle thickness type | mold guide part. It is a conceptual diagram which shows the cross section of (D) side small thickness type | mold guide part.

FIG. 5 (A) is a conceptual diagram of a cross section for explaining a recess-type air reservoir provided on a pedestal. (A) It is a conceptual view of a plane for explaining a recess-type air reservoir provided on a pedestal.

FIG. 6 (A) is a conceptual diagram of a cross section showing a pedestal provided with a flow path type air reservoir. (B) It is a conceptual diagram which shows the planar shape of the air vent part by the said shape.

FIG. 7 (A) is a conceptual cross-sectional view showing a pedestal provided with a recessed air reservoir. (B) It is a conceptual diagram which shows the planar shape of the air reservoir by the said shape.

FIG. 8A is a conceptual diagram of a cross section showing a pedestal provided with a rough surface type air reservoir. (B) It is a conceptual diagram which shows the planar shape of the air reservoir by the said shape.

FIG. 9A is a conceptual diagram of a cross section showing a pedestal provided with an uneven air reservoir. (B) It is a conceptual diagram which shows the planar shape of the air reservoir of the said shape.

FIG. 10 is a conceptual view of a cross section showing a pedestal in which a pedestal hole and a channel type air reservoir are combined.

FIG. 11 is a conceptual diagram of a cross section showing a pedestal in which a pedestal hole and a recess-type air reservoir are combined.

FIG. 12 is a conceptual cross-sectional view showing a pedestal in which a pedestal hole and a rough surface type air reservoir are combined.

FIG. 13 is a conceptual diagram of a cross section showing a pedestal in which a pedestal hole, a rough surface type air reservoir, and a recessed type air reservoir are combined.

FIG. 14 is a conceptual diagram of a cross section showing a pedestal in which a pedestal hole, a rough surface type air reservoir, and a flow channel type air reservoir are combined.

FIG. 15 is a conceptual diagram of a cross section showing a pedestal in which a pedestal hole and an uneven air reservoir are combined.

FIG. 16 is a conceptual diagram of a cross section showing a pedestal in which a pedestal hole, a channel type air reservoir and a recessed type air reservoir are combined.

FIG. 17 is a conceptual view of a cross section showing a pedestal in which a pedestal hole, a rough surface air reservoir, and an uneven air reservoir are combined.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Pocket 10 Plastic band-shaped molded article 12 Pocket recessed part 16 Adhesive part 2 Band-shaped base material 21 Feed hole 22 Opening part 3 Pedestal 31 Pedestal hole 33 Bottom part 36 Element storage loose fitting position 37 Side wall 4 Guide part 41 Corner type plate guide part 42 Corner type bar-shaped guide section 43 Side wall type paperboard-shaped guide section 46 Side bottom forming guide section 47 Side forming guide section 48 Side medium thickness guide section 49 Side thin guide section 5 Recessed section 51 Flow channel type air reservoir 52 Recessed section Mold air reservoir 52b Air reservoir concave portion 52h Step 53 Rough surface type degassing portion 54 Concavo-convex air reservoir 54a Convex portion 54b Recess 6 Semiconductor element 61 Metal lead portion 63 Loose fitting range 7 Cover tape A Loose fitting distance B Hold corners Guide C Guide width θ Angle of guide receiving part

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[Procedure amendment]

[Submission date] December 7, 1995

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Fig. 5

[Correction method] Change

[Correction contents]

FIG. 5 (A) is a schematic cross-sectional view illustrating a recess-type air reservoir provided on a pedestal. (B) is a schematic plan view illustrating a recessed air reservoir provided on the pedestal.

Claims (10)

[Claims] 1. A plastic band-shaped substrate having a component pocket for accommodating a semiconductor element, which is composed of a metal lead portion and a plastic molded portion, and a transporting feed hole provided at least on one side at equal intervals, and covering the pocket with heat. In a carrier tape for a semiconductor device, which comprises a cover tape having a heat sealant layer for sealing, the surface resistivity or volume resistivity in the vicinity of the component pocket portion in contact with the semiconductor device is 10 at a condition of 23 ° C. and a relative humidity of 90%. ^The pedestal supporting the semiconductor element so that the metal lead portion of the semiconductor element does not come into contact with the bottom portion and side wall of the pocket, and the metal lead portion rising from the side wall of the pocket are not larger than ¹² Ω / □. With a guide portion that does not contact and limits the movement of the semiconductor element, the surface of the heat sealant layer of the cover tape, A carrier tape for a semiconductor device, which has a surface resistivity of not more than 10 ¹² Ω / □ at 23 ° C. and a relative humidity of 90%. 2. The carrier tape for a semiconductor device according to claim 1, wherein the guide portion is provided in a plate shape or a rod shape. 3. The carrier tape for a semiconductor element according to claim 1, wherein a concave air reservoir is provided in the semiconductor element near the center of the pedestal of the component pocket. 4. A base material of a plastic strip-shaped molded product is formed by injection molding in a component pocket opening formed in the same step as a conveying feed hole in a plastic sheet having a thickness of 0.1 to 0.8 mm. A carrier tape for a semiconductor device, wherein the component pocket has a plate-shaped or rod-shaped guide portion with respect to a pedestal direction from a side wall of the pocket. 5. A component pocket formed by injection molding is provided in the pocket opening of a strip-shaped base material having a thickness of 0.1 to 0.8 mm in which a component pocket opening and a transport feed hole are provided at equal intervals. The carrier tape for a semiconductor element according to claim 1, 2 or 3, wherein the carrier tape is a tape. 6. The base material of the plastic strip-shaped molded article,
It is composed of a thermoplastic resin and conductive fine powder or conductive carbon having a particle diameter of 0.01 to 1 μm obtained by subjecting tin oxide, indium oxide, and zinc oxide to a conductive treatment, and the conductive fine powder and conductive carbon. , Surfactant is thermoplastic resin 1
The carrier tape for a semiconductor device according to claim 1, wherein the carrier tape is contained in an amount of 1 to 300% by weight based on 100 parts. 7. The base material of the plastic strip-shaped molded article,
At least one side of a conductive coating agent in which tin oxide, indium oxide, zinc oxide is subjected to a conductive treatment, conductive fine powder having a particle diameter of 0.01 to 1 μm or conductive carbon and a surfactant are dispersed and adjusted in a resin varnish. The carrier tape for a semiconductor device according to claim 1, wherein the carrier tape is provided by being applied onto the carrier tape. 8. The base material of the plastic strip-shaped molded article,
It is a laminate of two or more layers, and at least the volume resistivity of the inner surface layer in contact with the semiconductor element is 23 ° C. and the relative humidity is 90.
%, The carrier tape for semiconductor device according to claim 1, which is not larger than 10 ¹² Ω / □. 9. A conductive fine powder or conductive carbon having a particle size of 0.01 to 1 μm, wherein the component pocket is made by subjecting a thermoplastic resin and a metal oxide such as tin oxide, indium oxide, and zinc oxide to a conductive treatment, and The conductive fine powder, conductive carbon, and surfactant are made of a thermoplastic resin 100.
The carrier tape for a semiconductor device according to claim 1, wherein the carrier tape is an injection-molded product containing 1 to 300% by weight based on a part. 10. A conductive fine powder or a conductive carbon having a particle diameter of 0.01 to 1 μm obtained by subjecting a metal oxide of tin oxide, indium oxide or zinc oxide to a conductive treatment on at least one surface of the component pocket, and a surface active agent. The carrier tape for a semiconductor element according to claim 1, wherein a conductive coating agent in which the agent is dispersed and adjusted in a resin varnish is provided on at least one side.