JPH0936182A - Carrier tape for semiconductor devices - Google Patents

Abstract

(57) [Summary] [Purpose] In a carrier tape that contains and feeds semiconductor elements consisting of metal leads and plastic molded products, the pitch of the feed holes is stable, the strength of the pocket is strong, and the impact during transportation is high. It is also an object of the present invention to provide a carrier tape that stably fixes a semiconductor element, has a sufficient antistatic function, does not have peeling charge even when the cover tape is peeled, and can mount the semiconductor element stably. SOLUTION: In a plastic strip-shaped molded product 10 in which a pocket formed by separate processing is adhered to a strip-shaped base material 2 provided with a transport feed hole 21 and an opening 22, and a pedestal 3 provided in the pocket 1 is provided. The metal lead portion 6 of the semiconductor element 6 to be mounted
A rib-like or granular pedestal protrusion 4 is formed around the upper portion of the pedestal so that 1 does not come into contact with the pocket 1, and the surface resistivity thereof is set to not more than 10 ¹² Ω.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention is applicable to home electric appliances and electronic devices.
TECHNICAL FIELD The present invention relates to a carrier tape for a semiconductor element that accommodates and supplies a semiconductor element to be mounted, and relates to a carrier tape that prevents mechanical damage and static electricity damage of the semiconductor element during transportation, supply, and mounting.

[0002]

2. Description of the Related Art Conventional carrier tapes for semiconductor devices are
A plastic sheet is thermoformed (pressure molding, vacuum molding or pressure molding) with a component storage pocket, a pedestal, convex parts around the pedestal and feed holes for transportation, and is used in a long winding state. ing. In the case of a carrier tape for IC or LSI, the circuit may be short-circuited by static electricity generated by friction or contact between the semiconductor element and the carrier tape during transfer, or mechanical damage to the metal lead part due to contact with the pocket side wall. In order to prevent the contact between the pocket and the bottom of the semiconductor element, a pedestal or a rib is provided to fix the semiconductor element.

The carrier tape is formed by thermoforming, that is, after heating the sheet, the component pocket is formed in the mold by a pressure forming method, a vacuum forming method or a pressure forming method. Further, the pedestal hole and the feed hole are formed by any method such as before heating the sheet, simultaneously processing with a pocket for parts (hereinafter referred to as a pocket) in the mold, and after pocket processing. Alternatively, manufacturing of a carrier tape having a pedestal by an injection molding method has been considered.

However, since the thermoforming carrier tape has a large stretching rate, it has a limitation in the shapeability of the sheet, and holes are formed in the side wall of the pocket, the pedestal or the upper peripheral portion of the pedestal, or the pocket pedestal or The processing dimensional accuracy of the upper peripheral portion of the pedestal may be poor, or the thickness of that portion may be thin. Therefore, there is a problem that the shape retaining property is poor and the component is likely to be deformed or damaged by an impact, and it is difficult to hold the component at a predetermined position. Also,
After forming pedestal holes and feed holes in the sheet, thermoforming the pockets causes shrinkage of the sheet due to heating, variation in hole diameter due to expansion, variation in pitch between holes, and dimensional change between feed holes and pockets. However, when a semiconductor element is mounted on an electronic component with such a carrier tape, there is a problem in that feeding position accuracy and timing are deviated and stable conveyance cannot be performed. When the heating sheet is processed in the mold, the distance between the pocket and the hole becomes short when the molded product is small, and when the mold is manufactured by the machining method, the mold material with high precision and high hardness is required. Therefore, there was a problem that the die cost increased. Drilling after forming the pocket,
Since it is difficult to determine the positions of the feed holes and pockets, the positions of the holes easily fluctuate, and the position accuracy is not stable. There is a problem in that the timing is shifted and stable transportation cannot be performed, so that the semiconductor element is mounted while being displaced in mounting the substrate. In the heat molding in which the heating sheet is fed into the mold for molding, the mold clamping trace may form an uneven pattern on the surface of the carrier tape between cycles. When the cover tape is heat-sealed in this uneven pattern, the sealing strength is different due to the difference in heat-sealing pressure, resulting in uneven peeling strength. there were.

A semiconductor element has a structure in which an electric circuit is embedded in a resin. When the semiconductor element and a plastic which is a carrier tape contact and rub, static electricity is generated, and the static electricity short-circuits and damages the electric circuit. There was a problem to do. Alternatively, there is a problem that the electric circuit is short-circuited and damaged due to static electricity (peeling electrification) generated when the cover tape is peeled off.

In the production of a carrier tape by the injection molding method, it is difficult to produce a carrier tape having a thickness of 0.1 mm or less due to the characteristics of the injection molding resin and the structure of the mold. Also, due to the characteristics of the injection molding resin, a plastic band-shaped molded product manufactured by the injection molding method filled with semiconductor elements and heat-sealed with a cover tape has a poor flexibility between pockets and is wound into a wound shape. However, it has a problem that it cannot be rolled up so that it can be used for mounting because it is easily broken.

[0007]

SUMMARY OF THE INVENTION According to the present invention, a pedestal or an upper peripheral portion of the pedestal has a good processing dimensional accuracy, has a desired thickness in that portion, has shape retention, and stabilizes a semiconductor element even by impact. Not only can it be supplied by heat, but also the pedestal holes and feed holes can be molded with a stable size and pitch to have a sufficient antistatic function, and the positional accuracy between the pocket and feed hole is good, and the cover tape can be heat-sealed. There is no unevenness on the plastic sheet surface of the part to be heat-sealed under stable conditions, the winding strength is stable, and there is no peeling charge even when the cover tape is peeled off. An object of the present invention is to provide a carrier tape for a semiconductor device that can be stably mounted.

[0008]

To achieve the above object, in a carrier tape for a semiconductor device of the present invention, a pocket for accommodating a semiconductor device comprising a metal lead portion and a plastic molding portion and at least one side. In a carrier tape for a semiconductor device, which comprises a cover tape having a heat-sealant layer for covering and heat-sealing the pocket in a plastic strip-shaped molded product having a transporting feed hole at equal intervals, contacting the semiconductor device in the pocket portion The surface resistivity or volume resistivity in the vicinity is not larger than 10 ¹² Ω under the condition of 23 ° C. and 90% relative humidity, and the semiconductor element is placed in contact with the pedestal provided in the pocket. , The pedestal is formed so as not to come into contact with the pocket portion, and the surface resistivity or body of the heat sealant layer of the cover tape is Resistivity, 23 ° C., a relative humidity of 90
% Is a carrier tape for semiconductor devices which is not higher than 10 ¹² Ω. A second aspect of the invention is a carrier tape for a semiconductor device, in which rib-shaped or granular pedestal protrusions are provided around the pedestal upper portion of the pocket. A third aspect of the invention is a carrier tape for a semiconductor device, in which a concave air reservoir is provided near the center of the pedestal of the pocket. According to a fourth aspect of the present invention, a base material of a plastic band-shaped molded article is formed by injection molding in a pocket opening formed in a plastic sheet having a thickness of 0.1 to 0.8 mm in the same step as a feeding hole for conveyance. The carrier tape for a semiconductor device has pockets having rib-shaped or granular pedestal irregularities near the center of the pedestal and around the top. According to a fifth aspect of the present invention, a pocket formed by an injection molding method is provided in the pocket opening of a strip-shaped base material having a thickness of 0.1 to 0.8 mm in which the pocket opening and the transport feed hole are provided at equal intervals. It is a carrier tape for semiconductor devices. A sixth aspect of the present invention is that the base material of the plastic strip-shaped product is a thermoplastic resin and tin oxide, indium oxide, or zinc oxide subjected to a conductive treatment, and has a particle size of 0.01
It is composed of conductive fine powder or conductive carbon having a particle size of ˜1 μm and a surfactant, and the conductive fine powder, conductive carbon and surfactant are contained in an amount of 1 to 300% by weight based on 100 parts of the thermoplastic resin. A seventh invention is that the base material of the plastic band-shaped molded article is conductive fine powder or conductive carbon having a particle diameter of 0.01 to 1 μm obtained by subjecting tin oxide, indium oxide, and zinc oxide to a conductive treatment, and a surfactant. It is provided by applying a conductive coating agent prepared by dispersing and adjusting a resin varnish on at least one side. An eighth aspect of the present invention is a carrier for a semiconductor element, wherein the base material of the plastic band-shaped molded article is a laminate of two or more layers, and the volume resistivity of at least the inner surface layer in contact with the semiconductor element does not exceed 10 ¹² Ω. It is a tape. A ninth aspect of the invention is that the pocket has conductive fine powder or conductive carbon having a particle diameter of 0.01 to 1 μm obtained by subjecting a thermoplastic resin and a metal oxide such as tin oxide, indium oxide, and zinc oxide to a conductive treatment. An injection-molded article comprising a surfactant, wherein the conductive fine powder or conductive carbon and the surfactant are contained in an amount of 1 to 300% by weight based on 100 parts of the thermoplastic resin. In a tenth aspect of the present invention, at least one surface of the pocket has conductive fine powder or conductive carbon having a particle diameter of 0.01 to 1 μm obtained by subjecting a metal oxide of tin oxide, indium oxide, or zinc oxide to a conductive treatment, and a surface active agent. It is a carrier tape for a semiconductor element, which is provided by applying a conductive coating agent in which the agent is dispersed and adjusted to a resin varnish on at least one side.

The carrier tape for semiconductor device of the present invention comprises:
As shown in FIG. 1 (B), the pedestal 3 and the pedestal 3 formed by injection molding shown in the sectional view of FIG. 1 (A) on the belt-shaped substrate 2 provided with the feed hole 21 and the opening 22 for the pocket. The cover tape 7 is provided on the plastic strip-shaped molded product 10 shown in FIGS. 1C and 1D in which the pocket 1 having the pedestal protrusions 4 provided around the periphery of the is welded to the pocket opening 22 with the adhesive portion 16. It is a carrier tape. Then, as shown in FIG. 1A, the semiconductor element 6 is placed on the pedestal 3, the metal lead portion 61 is placed in the recess 12 of the pocket 1 in a suspended state, housed, and the pedestal protrusion 4 is loosely fitted to a predetermined position. It is sealed with a cover tape 7. (Note that the loose fitting described in this specification refers to a state in which the semiconductor element 6 is restricted in its movement range by the pedestal protrusions 4 and has a gap so that it can move to some extent.)

The strip-shaped base material 2 is selected in consideration of film forming suitability, hole processability, molding resin for the pocket 1 and heat sealability with the cover tape 7. Specifically, polypropylene, polyethylene, ethylene / vinyl acetate copolymer, ethylene / acrylic acid copolymer, ethylene / acrylic acid ester copolymer, ionomer, saponified ethylene / vinyl acetate copolymer, polyvinyl chloride, polyester , Polycarbonate, polystyrene, ABS resin, and the like, and mixtures thereof. Then, if necessary, a tackifier, a wax, an inorganic or organic filler, a lubricant and the like can be added. The thickness depends on the material, but is 0.1 to 0.8 mm, preferably 0.1 to 0.6 m.
m is a stretched or unstretched sheet. If the thickness is less than 0.1 mm, the carrier tape has low rigidity and is not suitable for transportation because it is cut by tension when applied to it at high speed and when it is filled with a semiconductor element, it is bent by the load of the semiconductor element. If the thickness is 0.8 mm or more, the rigidity becomes too strong and the flexibility is lost, and it becomes impossible to wind a long length. Although the width of the sheet is determined by the width of the carrier tape, the pockets 1 are additionally formed by forming openings for pockets in multiple rows of about 300 mm width, and then slitting is performed on a desired row.

The charging treatment of the strip-shaped base material can be carried out by kneading the base material resin with an antistatic agent or by coating the surface of the film-forming sheet or the surface of the injection-molded pocket.

Examples of the antistatic agent include the following. Conductive carbon having a particle size of 0.02 to 0.15 μm and a surface area of 40 m ² / g or more, such as Ketjen black, acetylene black, and furnest black. A conductive fine powder having a primary particle size of 0.01 to 1 μm obtained by subjecting a metal oxide such as tin oxide, indium oxide, or zinc oxide, a metal sulfide, or a sulfate to a conductive treatment such as doping. A conductive fine powder mainly composed of a fibrous or powdery metal having a particle diameter of 0.01 to 10 μm, such as copper, iron, aluminum, nickel and gold. Anionic, cationic, nonionic, and zwitterionic surfactants. Fatty acid derivative, tetrafunctional silicon partial hydrolyzate, bis-
Ammonium-based organic semiconductor. Among the above antistatic agents, metal oxides, surfactants or conductive carbons are preferable from the viewpoints of static electricity removal characteristics and non-staining property to semiconductor elements.

The treatment with the antistatic agent is carried out by a kneading method in which the resin is mixed in the film forming step, or by coating the film-formed sheet. The kneading method is resin 100
Addition of 1 to 300% by weight of antistatic agent to parts by weight,
It is particularly preferable to add 5 to 50% by weight. When the antistatic agent is less than 1% by weight, its surface resistivity is 23
10 ¹³ Ω / □ or higher at 90 ° C and 90% relative humidity (hereinafter, the surface resistivity measurement is the value measured at 23 ° C and 90% relative humidity), 5000 V at 23 ° C and 15% relative humidity
The decay time from 5 to 500 V (charge decay time) is 5 seconds or more (hereinafter, the measurement of the charge decay time is the value measured under the above conditions), and the effect of removing static electricity is not sufficient. The circuit of the electronic component may be short-circuited or damaged by static electricity generated by contact between the semiconductor element and the pocket or static electricity when the cover tape is peeled off. On the other hand, if the antistatic agent exceeds 300% by weight, not only the melt viscosity at the time of film formation increases and the fluidity decreases, but also when the film is formed, it becomes brittle and the required strength cannot be maintained.

The coating liquid used in the coating method is prepared by dispersing an antistatic agent in a varnish obtained by dissolving or dispersing synthetic resin as a binder. The binder is polyester, polyurethane, polystyrene, vinyl chloride / vinyl acetate copolymer, polyvinyl butyral, methyl cellulose, ethyl cellulose, ethylene / vinyl acetate copolymer, acrylic resin, silicone resin varnish, polycarbonate or the like, and modified products thereof. It is also possible to use a mixture, or an acrylate or silicone which is a thermosetting or ionizing radiation curable resin. The solvent that dissolves or disperses the binder is not limited to ordinary organic solvents such as esters, hydrocarbons, ketones, and alcohols, but is also used as a solution or dispersion using water. The amount of the antistatic agent added to 100 parts by weight of the binder is 1
It is preferable to add ˜300 wt%, especially 5 to 150 wt%. When the antistatic agent is less than 1% by weight, the surface resistivity is 10 ¹³ Ω / □ or more, and the charge decay time is 5 seconds or more, the static electricity removing effect is not sufficient, and the circuit of the electronic component is It may be short-circuited or damaged. Further, when the antistatic agent exceeds 100% by weight, the adhesion and strength of the coating film may be deteriorated and the coating film may fall off. The thickness of the coating film can be appropriately set so that the surface resistivity is 10 ¹² Ω or less / □ or less, but it is limited by the cost and the coating machine, and is 0.1 to 100 μm, preferably 1 ~ 50
μm. If the adhesion of the coating film to the substrate is not sufficient, urethane-based, isocyanate-based, polyethyleneimine-based varnish, etc. can be used as a primer on the coated surface of the substrate.

The above-mentioned strip-shaped substrate may be composed of a single layer or a multilayer laminate of two or more layers. Multilayer is cost,
Mechanical properties of the base material (elongation, rigidity, flexibility, tensile strength, tear strength, etc.), thermal characteristics (heat resistance, cold resistance, softening temperature, etc.), environmental characteristics (chemical resistance, solvent resistance, water resistance) Properties, radiation resistance, light resistance, disposal, etc.), gas permeation characteristics (oxygen barrier, water vapor permeability, inorganic or organic gas barrier, etc.), water absorption characteristics, etc. .

The materials constituting the multi-layer laminate are thermoplastic resins such as polyester, polyurethane, polystyrene,
Vinyl chloride / vinyl acetate copolymer, cellulose derivative,
Ethylene / vinyl acetate copolymer, ethylene / acrylic acid copolymer, ethylene / acrylic ester copolymer, ionomer, polyvinyl alcohol, saponified ethylene / vinyl acetate copolymer, acrylic resin, silicone resin, polycarbonate only Alternatively, a film of cellophane or the like can be used in addition to unsaturated polyester, thermosetting resin, or acrylate or silicone which is an ionizing radiation curable resin. The multi-layer laminate is obtained by laminating single-layer sheets of the above materials or applying a resin varnish. Then, at least one layer of the sheet or a layer in which the coating film contains an antistatic agent is used.
It can be configured by combining layers.

The surface resistivity of the conductive layer included in the multilayer laminate preferably has a charge decay time of 5 seconds or less. When the surface resistivity is 10 ¹² Ω / □ and the charge decay time exceeds 5 seconds, the effect of removing static electricity is not sufficient, and the circuit of the electronic component may be short-circuited or damaged. The thickness of the unit layer constituting the multi-layer laminate is preferably 0.1 to 600 μm, and if the thickness is 0.1 μm or less, the characteristics of the constituted layer cannot be obtained. It becomes difficult to wind the coil without impairing its flexibility.

The plastic strip base material can be formed into a film by a known method. For example, the film is formed by stretching or unstretching such as T-die method, circular die method, solvent melt casting method, calender method and the like. The multi-layer laminate is formed by a thermal lamination, a hot-melt adhesive, a dry lamination method using an isocyanate adhesive, or a thermoplastic resin for an isocyanate-based or imine-based primer layer of two or more films or sheets by a T-die method. It can be obtained by a usual method such as a melt extrusion coating method and a coextrusion film forming method.

As a film forming method by coating, a gravure plate,
Or direct or reverse coating such as diagonal printing, roll coating, comma coating, air knife coating, etc., as well as silk printing method,
Known coating and printing methods such as a transfer printing method, a dry offset printing method, and a pad printing method can be used.

The pocket formed by the injection molding method is preferably selected from a material that is heat-sealed with the plastic which is a component of the belt-shaped base material in consideration of cost, moldability and mechanical properties. , Polyvinyl chloride, polyester, polycarbonate, polystyrene, ABS resin, polyurethane, vinyl chloride / vinyl acetate copolymer, ethylene / vinyl acetate copolymer, ethylene / acrylic acid copolymer, ethylene / acrylic acid ester copolymer, Ionomer, polyvinyl alcohol, saponified ethylene / vinyl acetate copolymer and the like are used. Then, if necessary, a tackifier, a wax, an inorganic or organic filler, a lubricant and the like can be added.
When fixing the pocket and the plastic strip-shaped base material by fitting, a material other than heat-weldable material can be freely selected. The depth of the pocket is determined by the shape and weight of the semiconductor element to be filled, and an unnecessary thickness should be avoided, and a maximum of about 10 mm is preferable.

The charging treatment of the resin used in the injection molding method can be carried out by kneading the antistatic agent or coating the surface of the molded product. As the antistatic agent used for kneading, the same ones as those used for the plastic belt-like substrate can be used, and the following ones can be mentioned. Conductive carbon having a particle size of 0.02 to 0.15 μm and a surface area of 40 m ² / g or more, such as Ketjen black, acetylene black, and furnest black. A conductive fine powder having a primary particle size of 0.01 to 1 μm obtained by subjecting a metal oxide such as tin oxide, indium oxide, or zinc oxide, a metal sulfide, or a sulfate to a conductive treatment such as doping. A conductive fine powder mainly composed of a fibrous or powdery metal having a particle diameter of 0.01 to 10 μm, such as copper, iron, aluminum, nickel and gold. Anionic, cationic, nonionic, and zwitterionic surfactants. Fatty acid derivative, tetrafunctional silicon partial hydrolyzate, bis-ammonium organic semiconductor. Among the above antistatic agents, metal oxides, surfactants or conductive carbons are preferable from the viewpoints of static electricity removal characteristics and non-staining property to semiconductor elements.

The treatment with the antistatic agent is carried out by a kneading method which is mixed in the injection molding step or by coating the film-formed sheet. In the kneading method, it is preferable to add the antistatic agent in an amount of 1 to 300% by weight, particularly 5 to 50% by weight, based on 100 parts by weight of the resin. When the antistatic agent is less than 1% by weight, the surface resistivity is 10 ¹³ Ω / □
As described above, the decay time (charge decay time) is 5 seconds or more, the effect of removing static electricity is not sufficient, and the circuit of the electronic component is generated by static electricity generated when the semiconductor element is in contact with the pocket or when the cover tape is peeled off. , Short circuit or damage may occur. When the antistatic agent exceeds 300% by weight,
Not only the melt viscosity at the time of injection molding increases and the fluidity decreases, but also the injection molded product becomes brittle and the required strength cannot be maintained.

The coating solution for the pocket is prepared by adding an antistatic agent to a varnish obtained by dissolving or dispersing synthetic resin as a binder. The binder is polyester, polyurethane, polystyrene, vinyl chloride / vinyl acetate copolymer, cellulose derivative, ethylene / vinyl acetate copolymer, acrylic resin, silicone resin varnish,
It is also possible to use polycarbonate or the like, a modified product thereof, a mixture thereof, or an acrylate or silicone which is a thermosetting or ionizing radiation curable resin. As the solvent for dissolving or dispersing the binder, not only usual organic solvents of ester, hydrocarbon, ketone and alcohol, but also a solution or dispersion using water can be used. The amount of the antistatic agent added to 100 parts by weight of the binder is
It is preferable to add 1 to 300% by weight, particularly 5 to 50% by weight. When the antistatic agent is less than 1% by weight, the surface resistivity is 10 ¹³ Ω / □ or more and the charge decay time is 5 seconds or more, the effect of removing static electricity is not sufficient, and the circuit of the electronic component is short-circuited. It may be damaged. Further, when the antistatic agent exceeds 300% by weight, the adhesion and strength of the coating film may be deteriorated and the coating film may fall off. The thickness of the coating film can be appropriately set so that the surface resistivity is 10 ¹² Ω or less / □ or less, but it is limited by the cost and the coating machine, and is 0.1 to 100 μm, preferably 2 ˜50 μm. As the coating method, in addition to spray coating, known coating methods such as silk printing method, transfer printing method, dry offset printing method, pad printing method and the like are effective in the case of molding.

The method of adhering the pockets formed on the belt-shaped base material 2 by injection molding can be appropriately selected by a known method. Preferably, a pocket previously formed by an injection molding method is bonded to the bonding portion of the pocket opening provided on the strip-shaped substrate by an ultrasonic bonding method,
It is fixed by using a heat sealing method such as a high frequency bonding method or a heat sealing method, a chemical bonding method using an adhesive or a solvent, or a physical bonding method such as fitting. Alternatively, a method is used in which a strip-shaped article base material having an opening for a pocket provided in advance is attached to an injection molding die, and the pocket is formed, and at the same time, melt bonding is performed at the bonding portion.

The cover tape used in the strip-shaped molded article of the present invention has a base sheet which has been conventionally used, and a heat-sensitive adhesive layer, a pressure-sensitive adhesive type adhesive layer, as an adhesive seal layer to a strip-shaped substrate. Those provided with an ionizing radiation-curable seal adhesive layer or a microcapsule type seal adhesive layer can be used. A particularly preferable adhesive layer is one provided with a heat sealant layer made of a heat-sensitive adhesive. The basic layer structure of the cover tape is exemplified as follows. Base sheet / adhesive layer / intermediate layer / heat sealant layer Base sheet / adhesive layer / intermediate layer / adhesive layer / biaxially stretched film layer / heat sealant layer Base sheet / heat sealant layer Base sheet / adhesion Seal layer The base sheet may be a biaxially stretched film, such as a uniaxially stretched film such as polyester, polypropylene or nylon, a biaxially stretched film, an unstretched film, or a synthetic paper. The intermediate layer includes polyolefin, polystyrene, ethylene / vinyl acetate copolymer, ethylene / acrylic acid copolymer, ethylene / acrylic acid ester copolymer, ionomer, polyester, and modified products or mixtures thereof.

The heat sealant layer is made of polyurethane, polyester, acrylic resin, vinyl chloride / vinyl acetate copolymer, ethylene / vinyl acetate copolymer, ethylene.
It can be appropriately selected from acrylic acid copolymers, ethylene / acrylic acid ester copolymers, ionomers, silicones and the like. Then, in order to impart antistatic properties to the cover tape, an antistatic agent similar to the above-mentioned plastic strip-shaped substrate is added to at least one of the constituent layers. Furthermore, a surfactant or a bisammonium-based organic semiconductor layer can be formed on the surface of the heat sealant layer. There are the following types of cover tape peeling,
Desirably, delamination is performed and the peel strength is 100 to
With a width of 1000 g / 15 mm, it is desirable that the difference between the maximum value and the minimum value at the time of peeling is less than 100 g / 15 mm width. Interfacial peeling type that peels between the heat sealant layer and the plastic strip base material. A cohesive failure type that breaks and peels inside the heat sealant layer. Delamination type that peels between the heat sealant layer and the intermediate layer or the biaxially stretched film layer.

[0027]

The carrier tape for a semiconductor device of the present invention can be applied to a strip-shaped base material containing plastic in which a feed hole and a pocket opening are formed in the same step on a plastic sheet at room temperature.
It is formed by forming a pocket using an injection molding resin that can be heat-melt-bonded to the molded product. Therefore, it is a carrier tape having both a pocket having shape stability and flexibility of a strip-shaped base material sheet having dimension stability,
It can be rolled up. That is, since the pocket is an injection molded product, the side wall of the pocket, the recess of the pocket,
The dimensional accuracy and thickness accuracy of the pedestal and the pedestal protrusion are stable. Further, it is possible to eliminate the deformation and bending of the pedestal, the pedestal protrusion and the side wall of the pocket due to the impact. The semiconductor element housed in the pedestal is stable and does not move during transfer, and prevents static electricity from being generated or damage due to friction. The heat sealing between the carrier tape processed at room temperature and the cover tape has the effect of stabilizing the peel strength without any uneven pattern on the surface. The carrier tape has good productivity not only by kneading conductive fine powder but also by applying it.

A method of manufacturing the carrier tape for semiconductor device of the present invention will be described with reference to the drawings. The feed hole 21 and the pocket opening 22 shown in FIG. 1B are formed in a rolled shape by a method of punching a plastic sheet with a press die, a Thomson blade or a cutter blade, laser processing, or the like. Then, the feed hole 2 is added to a supply unit of a known injection molding machine provided with a winding supply and winding unit.
1 and a plastic band-shaped substrate 2 having a pocket opening 22 are inserted into an injection molding machine, positioned by the feed hole 21 and / or the pocket opening 22, and molten resin is injected and injected into the cavity. As shown in FIG. 1 (A), the pocket 1 is formed on the plastic strip-shaped substrate 2 and the strip-shaped substrate 2 is formed.
At the end of the opening 22 and the upper part of the pocket, the band-shaped molded article 10 is formed by fusion bonding at the bonding portion 16 between the band-shaped base material and the pocket. At this time, be careful so that the molding resin does not adhere to the heat-sealed surface of the cover sheet of the belt-shaped substrate 2 and rise. Then, a slitter is wound on a desired row and rolled up to form the winding of the band-shaped molded product 10. In addition, the strip-shaped substrate 1
It is also possible to provide the feed hole 21 and the opening 22 for the pocket with a press die composed of a cavity and a core, and to perform injection molding to produce the strip-shaped molded product 10 continuously with the process.

The pocket 1 formed by the injection molding method is shown in FIG.
As shown in FIG. 2, the pedestal 3 on which the semiconductor element 6 is mounted and the metal lead portion 61 can be accommodated in the recess 12 of the pocket 1 in a suspended state. Then, rib-shaped or granular protrusions 41 to 44 are formed on the peripheral portion of the pedestal 3 in order to prevent the metal lead portion 61 from being bent, bent, or chipped. The recess 12 of the pocket 1 has a space in which the metal lead portion 61 of the semiconductor element does not contact the pocket side wall 13 and the pedestal 3. The rib-shaped or granular rib-shaped protrusions 41, the corner rib-shaped protrusions 42, the side rib-shaped protrusions 43, and the peripheral grain-shaped protrusions 44 shown in FIG. The bottom 66 of the element is shown in FIG.
(B) In the storage position of the element shown in (a) 63, the corner of the element is regulated by one protrusion, or in the storage loose fitting position (b) 64, two corners are used. By controlling the corner between the protrusions, the metal lead portion 61 and the side wall 13
Is not to be contacted with. The height B of the protrusion from the protrusion rising portion 47 of the pedestal 3 in contact with the semiconductor element 6 shown in FIG.
It is desirable to set it to 5.0 mm, preferably 0.1 to 2.0 mm. When the height B of the protrusion is less than 0.01 mm, when the semiconductor element 6 is accommodated in the pedestal 3, the semiconductor element 6 is accommodated in an oblique direction with a deviation from the loose fitting position 63 or 64 of the semiconductor element accommodation position 36. If it is larger than 5 mm, the effect of the protrusions for restricting the semiconductor element to the loosely fitting position is reduced, and the metal lead portion 61 of the semiconductor element may come into contact with the pocket side wall 13 to cause a defect. .

The gap distance C between the projections 46 of the granular or rib-like protrusions and the pocket side wall 13 shown in FIG. 4A is set in accordance with the size of the metal lead portion 61 of the semiconductor element. Preferably, when the semiconductor element 6 is at the position of the protrusion rising portion 47, the metal lead portion 61 is in the pocket 1.
It is set so as not to contact the side wall 13 of the concave portion 12 so that the metal lead portion 61 is not damaged. And the side wall 1
3 is 0.5 to 2 from the tip of the metal lead portion 61.
It is 0 mm, preferably 2 to 10 mm.

Although the sectional shape of the protrusion 4 shown in FIG. 4B is not particularly specified, the radius of curvature R of the tip 46 of the protrusion of the pedestal is not limited.
However, it is preferable that the thickness is 0.1 to 8.0 mm, preferably 0.5 to 3 mm, and even if the metal lead portion 61 and the protruding portion 4 are accidentally brought into contact with each other without the edge portion, a defect is less likely to occur. Further, the thickness D of the protrusion is preferably about 0.1 to 8 mm. If the thickness of the protrusion is less than 0.1 mm, the rigidity of the protrusion is insufficient and the protrusion may be deformed by impact or pressure, and the metal lead portion 61 may be damaged. If the thickness exceeds 8 mm, the amount of material used increases, The size and weight of the pocket become large, and not only the cost of the material is rebalanced, but also when the carrier tape is wound, the plastic band-shaped base material is bent and it becomes difficult to wind it. Further, although the shape of the protrusion 4 can be appropriately selected, in order to maintain impact resistance, pressure resistance, heat resistance, bending resistance, and tensile strength, the open type protrusion 48 shown in FIG. The closed protrusion 49 shown in (D) is preferable.

When the semiconductor element is stored in the pocket base,
When the contact portion of the semiconductor element with the pedestal 3 is flat as shown in FIG. 2, an air layer of a thin film is likely to be generated at the contact portion, and the semiconductor element jumps due to the pressure fluctuation of the air layer. The metal lead portion 61 may come into contact with the side wall 13, the bottom portion 14 or the pedestal 3 and be damaged due to movement such as inclination, rotation and the like. Also, the amount of electrostatic charge generated is
Work function (contact count, friction count, pressure, contact area, etc.)
Is proportional to. Therefore, if the number of times of friction, the number of times of contact, and the contact pressure are the same, the amount of static electricity generated increases when the contact area between the semiconductor element and the pedestal is large, and dust intrusion and adhesion of dust to the metal leads As a result, the function of the semiconductor element is impaired and the electric circuit is short-circuited due to the generated electrostatic load, and the function of the semiconductor element is lost.

To reduce the amount of static electricity generated, it is effective to reduce the contact area. As a method for reducing the contact area and preventing the formation of an air layer, see FIG.
Recessed air reservoir 5 which is a portion not in contact with the semiconductor element shown in
Is preferably provided to reduce the contact area of the semiconductor element and allow air to escape from the surface of the pedestal 3.

The following method is effective for constructing the air reservoir 5 specifically. As a positioning hole for housing the semiconductor element so that the metal lead portion 61 does not come into contact with the side wall 13, the pedestal 3 and the bottom portion 14, the pedestal hole 31 penetrating the pedestal 3 shown in FIG. How to install in the section. As shown in FIG. 7, a method of forming a flow path type air reservoir 51 of air radially in the central direction of the pedestal 3. A method of forming a recess near the center of the pedestal shown in FIG. 8 to provide a recess-type air reservoir 52. In this case, the air reservoir 5 is
It is effective to add a concave portion 52b of the air reservoir which is inclined further deeper from the concave air reservoir 52 provided on the pedestal toward the center as shown in FIG. The step depth 52h of the recess 52b of the added air reservoir is 0.05 to 1
It is 0 mm, preferably 0.1 to 5 mm. Step depth 5
If 2h is less than 0.5 mm, the effect of accumulating the air layer is small, and if it exceeds 5 mm, the pocket becomes deep, so the molding material becomes large, the cost and the side wall 13 of the entire pocket become large and deep, and band-shaped molding. This causes a problem that it becomes difficult to wind the product. As shown in FIG. 9, the surface of the pedestal is mat-processed to provide a rough surface type air reservoir 53 which is a flow path of air. In the matting process, the center line average roughness is 1.0 mm or less and the maximum height is 2.0 mm or less in the roughness curve, and the center line waviness is 1.0 mm or less and the maximum waviness is 2.0 mm in the waviness curve. The following are preferred. A method of forming a concave-convex air reservoir 54 having convex and concave portions 54a and concave portions 54b shown in FIG. 10 on the surface of the pedestal.

Recessed type air reservoir 5 shown in and above.
2, flow path type air reservoir 51, concave and convex air reservoir 54 with concave and convex grooves
The area of the contact portion between the semiconductor element 6 and the pedestal 3 is also small, the amount of generated electrostatic charge is small, and the mixture of dust is prevented, and it is also effective in protecting the function of the semiconductor circuit. In addition, the pedestal hole 31, the rough surface type air reservoir 53, the flow path type air reservoir 51, the recess type air reservoir 52, the concave and convex type air reservoir 54 by the concave and convex grooves, and the like are appropriately combined to produce a synergistic effect. For example, (a) the pedestal 3 shown in FIG. 11 in which the pedestal hole 31 and the flow path type air reservoir 51 are combined. (b) The pedestal 3 shown in FIG. 12 in which the pedestal hole 31 and the recessed air reservoir 52 are combined. (c) The pedestal 3 shown in FIG. 13 in which the pedestal hole 31 and the rough surface type air reservoir 53 are combined. (d) Pedestal hole 31, concave air reservoir 52 and rough surface air reservoir 5
The pedestal 3 shown in FIG. (e) The pedestal 3 shown in FIG. 15 in which the flow path type air reservoir 51 and the recess type air reservoir 52 are combined. (f) The pedestal 3 shown in FIG. 16 in which the pedestal hole 31 and the uneven air reservoir 54 are combined. (g) Pedestal hole 31, recessed-type air reservoir 52, and channel-type air reservoir 5
Pedestal 3 shown in FIG. 17 in combination with 1. (h) Pedestal hole 31, rough surface type air reservoir 53 and uneven air reservoir 5
The pedestal 3 shown in FIG.

[0036]

[Effect] The carrier tape for a semiconductor device of the present invention is a composite of a plastic strip-shaped base material having a feed hole and a pocket opening formed in a plastic sheet at room temperature and an injection-molded pocket with high molding accuracy in the same step. Is configured. Therefore, it is possible to configure the winding of the carrier tape having flexibility of the pocket having shape stability and the sheet having dimension stability. Further, the convex pedestal on which the semiconductor element formed in the pocket is mounted can be freely formed. Then, the protrusion provided on the peripheral portion of the pedestal restricts the storage range of the semiconductor element and is loosely fitted, and has an effect of preventing damage to the semiconductor element due to static electricity or contact between the metal lead portion and the side wall. The accuracy of the position of the pedestal hole formed by injection molding and the processing of the feed hole, which is performed on the plastic sheet at room temperature, are stable in hole size and pitch accuracy. The heat sealing between the carrier tape processed at room temperature and the cover tape has the effect of stabilizing the peel strength without any uneven pattern on the surface. Carrier tape is
Not only the conductive fine powder is kneaded, but also the product can be applied to have high productivity.

[Brief description of drawings]

FIG. 1A is a conceptual diagram showing a cross section of a carrier tape accommodating a semiconductor element. (B) It is a conceptual perspective view showing a plane of a strip-shaped substrate. (C) It is a perspective view showing the concept of a strip-shaped molded product. It is a conceptual diagram which shows the XX cross section of (D) belt-shaped molded article.

FIG. 2A is a conceptual sectional view showing a housed state of a semiconductor element housed and held by a pedestal protrusion. FIG. 6B is a plan view showing the positions of rib-shaped protrusions provided on the peripheral portion. (C) It is a plan view showing the positions of rib-shaped protrusions provided at the corners. (D) It is a plan view showing the positions of rib-shaped protrusions provided on the sides. (E) It is a plan view showing the positions of the granular protrusions provided on the peripheral portion.

FIG. 3 (A) is a plan view of a concept showing a loose fitting position of a semiconductor element. (B) It is a top view of the concept which shows the other accommodation loose fitting position of a semiconductor element.

FIG. 4 (A) is a cross-sectional view showing the dimensional relationship of pockets. (B) It is a cross-sectional conceptual diagram showing the tip shape of the protrusion. (C) It is a cross-sectional conceptual diagram showing the shape of a protrusion. (D) It is a cross-sectional conceptual diagram showing another shape of the protrusion.

FIG. 5 is a conceptual diagram of a cross section for explaining a recess-type air reservoir of a pedestal.

FIG. 6A is a conceptual diagram of a cross section showing a pedestal provided with a pedestal hole. (B) It is a conceptual diagram which shows the planar shape of the air reservoir by the said shape.

FIG. 7A is a conceptual diagram of a cross section showing a pedestal provided with a flow path type air reservoir. (B) It is a conceptual diagram which shows the planar shape of the air reservoir by the said shape.

FIG. 8A is a conceptual diagram of a cross section showing a pedestal provided with a recessed air reservoir. (B) It is a conceptual diagram which shows the planar shape of the air reservoir by the said shape.

FIG. 9A is a conceptual diagram of a cross section showing a pedestal provided with a rough surface type air reservoir. (B) It is a conceptual diagram which shows the planar shape of the air reservoir of the said shape.

FIG. 10A is a conceptual diagram of a cross section showing a pedestal provided with an uneven air reservoir. (B) It is a conceptual diagram which shows the planar shape of the air reservoir of the said shape.

FIG. 11 (A) is a conceptual sectional view showing a pedestal combined with a pedestal hole flow channel type air reservoir. (B) It is a conceptual diagram which shows the planar shape of the air reservoir of the said shape.

FIG. 12 is a conceptual diagram of a cross section showing a pedestal in which a pedestal hole and a recess-type air reservoir are combined.

FIG. 13 is a conceptual sectional view showing a pedestal in which a pedestal hole and a rough surface type air reservoir are combined.

FIG. 14 is a conceptual diagram of a cross section showing a pedestal in which a pedestal hole, a recessed type air reservoir, and a rough surface type air reservoir are combined.

FIG. 15 is a conceptual diagram of a cross section showing a pedestal in which a channel type air reservoir and a recess type air reservoir are combined.

FIG. 16 is a conceptual diagram of a cross section showing a pedestal in which a pedestal hole and an uneven air reservoir are combined.

FIG. 17 is a conceptual diagram of a cross section showing a pedestal in which a pedestal hole, a recess-type air reservoir, and a channel-type air reservoir are combined.

FIG. 18 is a conceptual diagram of a cross section showing a pedestal in which a pedestal hole, a rough surface type air reservoir 53, and a concavo-convex air reservoir are combined.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 pocket 10 strip | belt-shaped molded article 12 recessed part 13 side wall 14 bottom part 16 adhesive part 2 strip | belt-shaped base material 21 feed hole 22 opening part 3 pedestal 31 pedestal hole 36 element storage position 4 pedestal protrusion part 41 peripheral edge rib-shaped protrusion part 42 corner part rib-shaped Projection 43 Side rib-shaped projection 44 Peripheral granular projection 46 Tip of projection 47 Projection rising part 48 Open projection 49 Closed projection 5 Air reservoir 51 Flow channel air reservoir 52 Recessed air reservoir 52b Air reservoir Concave portion 52h step 53 rough surface type air reservoir 54 concave-convex air reservoir 54a concave-convex air reservoir convex portion 54b concave-convex air reservoir concave portion 6 semiconductor element 61 metal lead portion 63, 64 semiconductor element storage loose fitting position 7 cover tape B Height of protrusion C Distance between tip of protrusion and side wall D Width of rising part of protrusion R Radius of curvature of tip of protrusion

Claims (10)

[Claims] 1. A component pocket for accommodating a semiconductor element comprising a metal lead portion and a plastic molding portion,
In a carrier tape for a semiconductor device, which comprises a plastic tape-shaped molded product having at least one transporting hole provided at equal intervals on one side and a heat-sealant layer for heat-sealing the pocket, the semiconductor of the component pocket portion The surface resistivity or volume resistivity in the vicinity of contact with the device is not larger than 10 ¹² Ω under the conditions of 23 ° C. and relative humidity of 90%, and the semiconductor device is placed in contact with the pedestal provided in the pocket. The metal pedestal forms the pedestal so as not to come into contact with the pocket portion, and the surface or volume resistivity of the heat sealant layer of the cover tape is 10 at 23 ° C. and a relative humidity of 90%. Carrier tape for semiconductor devices, characterized by not exceeding ¹² Ω. 2. The carrier tape for a semiconductor element according to claim 1, wherein a rib-shaped or granular pedestal protrusion is provided around the upper portion of the pedestal of the component pocket. 3. The carrier tape for a semiconductor device according to claim 1, wherein a concave air reservoir is provided in the vicinity of the center of the pedestal of the component pocket. 4. A plastic strip-shaped base material is formed by injection molding in a pocket for a component formed in the same step as a feed hole for conveyance in a plastic sheet having a thickness of 0.1 to 0.8 mm. Parts pocket near the center of the pedestal,
A carrier tape for a semiconductor device, characterized in that it has rib-shaped or granular pedestal irregularities around the upper part. 5. A component pocket formed by injection molding at a pocket-shaped opening of a strip-shaped base material having a thickness of 0.1 to 0.8 mm in which a component pocket opening and a transport feed hole are provided at equal intervals. It is provided, Claim 1, characterized by the above-mentioned.
2. The carrier tape for a semiconductor device according to 2 and 3. 6. The base material of the plastic strip-shaped molded article,
It is composed of a thermoplastic resin and conductive fine powder having a particle diameter of 0.01 to 1 μm obtained by subjecting tin oxide, indium oxide or zinc oxide to conductive treatment, or conductive carbon and a surfactant, and the conductive fine powder or conductive The carrier tape for a semiconductor device according to claim 1, wherein the carbon and the surfactant are contained in an amount of 1 to 300% by weight based on 100 parts of the thermoplastic resin. 7. The base material of the plastic strip-shaped molded article,
At least one side of a conductive coating agent in which tin oxide, indium oxide, zinc oxide is subjected to a conductive treatment, conductive fine powder having a particle diameter of 0.01 to 1 μm or conductive carbon and a surfactant are dispersed and adjusted in a resin varnish. The carrier tape for a semiconductor device according to claim 1, wherein the carrier tape is provided by being applied onto the carrier tape. 8. The base material of the plastic strip-shaped molded article,
2. The carrier tape for a semiconductor device according to claim 1, wherein the carrier is a laminate of two or more layers and at least the volume resistivity of the inner surface layer in contact with the semiconductor device does not exceed 10 ¹² Ω. 9. A conductive fine powder or conductive carbon having a particle diameter of 0.01 to 1 μm, wherein the component pocket is made by subjecting a thermoplastic resin and a metal oxide such as tin oxide, indium oxide, or zinc oxide to a conductive treatment. And a surface-active agent, and the electroconductive fine powder or the electroconductive carbon and the surface-active agent are injection-molded articles containing 1 to 300% by weight with respect to 100 parts of the thermoplastic resin. 3. The carrier tape for a semiconductor device as described in 3 above. 10. A conductive fine powder or conductive carbon having a particle diameter of 0.01 to 1 μm obtained by subjecting a metal oxide such as tin oxide, indium oxide, or zinc oxide to a conductive treatment, and an interface on at least one surface of the component pocket. 2. The carrier tape for a semiconductor element according to claim 1, wherein a conductive coating agent in which an activator is dispersed and adjusted in a resin varnish is provided on at least one side.