JPH0959062A - Dielectric ceramic composition, method for producing the same, and laminated high-frequency device - Google Patents

Abstract

(57) [Abstract] [Object] By containing a glass component that promotes sintering as an auxiliary component, sintering can be performed at a low temperature of about 1000 ° C., a high relative permittivity, a high Q value, and a small resonance vibration frequency. Satisfy the temperature coefficient at the same time. SOLUTION: This is composed of calcium oxide, magnesium oxide, niobium oxide and titanium oxide, and has the general formula Ca {(Mg _1/3 N
b _2/3 ) _1-x Ti _x } O ₃ (where 0 <x ≦ 0.50) is contained in the range of 40 parts by weight or more and 98 parts by weight or less, and SiO ₂ or
A composition containing at least 2 parts by weight and not more than 60 parts by weight of subcomponents containing at least one of B ₂ O ₃ , MgO, NiO, CuO,
At least one oxide selected from MnO ₂ and WO ₃ is 0.
By adding 1 part by weight or more and 10 parts by weight or less, the sintering temperature can be further lowered, the composition is stable, and the dielectric ceramic composition having a higher Q value can be obtained. It is useful for dielectric ceramics and laminated high frequency devices used in the high frequency region.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric ceramic and a laminated high frequency device used for various filter elements and resonators using high frequency.

[0002]

2. Description of the Related Art In recent years, with the progress of communication using electromagnetic waves in the microwave range, such as car phones, mobile phones, and satellite broadcasting, there is an increasing demand for miniaturization of terminal equipment. In order to miniaturize the terminal equipment, it is necessary to miniaturize the individual parts constituting the equipment. In these devices, the dielectric porcelain is incorporated in various filter elements, frequency stabilizing elements of oscillators, and the like. When the same resonance mode is used, the size of these resonant devices is inversely proportional to the square root of the relative permittivity (ε _r ) of the dielectric material used. Materials with a dielectric constant are needed. Further, other characteristics required for the dielectric ceramics are low loss in the microwave region, that is, a high Q value, and a small temperature coefficient (τ _f ) of the resonance frequency. As a material having a large relative dielectric constant, a (Pb, Ca) ZrO ₃ system is disclosed in Japanese Patent Application Laid-Open No. 4-65021. This system has a high relative permittivity (ε _r ) of over 100 and 2 to 4 GHz.
Has a high Q value of about 800 and a small temperature coefficient of resonance frequency.

On the other hand, a conductor and a dielectric porcelain have a laminated structure,
Attempts have been made to reduce the size and increase the functionality of resonant devices. When the conductor is used in a high frequency region such as a microwave, the conductor needs to have high conductivity.
It is necessary to use u, Ag or their alloys. Further, when the dielectric porcelain has a laminated structure, it is necessary to sinter at the same time as the metal of the conductor, and therefore, it is necessary to sinter densely under a calcination condition in which the conductor metal does not melt and does not oxidize.
That is, the melting point of the conductor metal used (1083 for Cu)
C., 1063.degree. C. for Au, 961.degree. C. for Ag) and lower oxygen partial pressure when Cu is used for the electrode. As a microwave dielectric ceramic that can be sintered at a low temperature, a Bi ₂ O ₃ —CaO—Nb ₂ O ₅ system is disclosed in JP-A-5-225826.

[0004]

However, Bi ₂
O ₃ —CaO—Nb ₂ O ₅ based porcelain can be sintered at a low temperature of about 1000 ° C., but since Bi ₂ O _{3 as the} main component evaporates during firing, the dielectric characteristics are unstable with respect to the firing temperature. There was a problem. Further, in general, when the resonant device is made smaller, the Q value is lowered, so that a material having a high Q value has been demanded.

The present invention is intended to solve such problems, and it is possible to lower the sintering temperature, the composition is stable, and the dielectric porcelain composition having a higher Q value, a method for producing the same, and a laminated high frequency wave. It is intended to provide a device.

[0006]

In order to achieve this object, the dielectric ceramic composition of the present invention comprises calcium oxide, magnesium oxide, niobium oxide and titanium oxide,
Formula _{Ca {(Mg 1/3 Nb} 2/3) 1-x Ti x} O 3 ( however, 0 <x ≦ 0.50) Range Chemical is less than 98 parts by weight 40 parts by weight or more expressed by , And SiO ₂ or B ₂ O ₃
A composition containing at least 2 parts by weight and not more than 60 parts by weight of subcomponents containing MgO, Ni
At least one oxide selected from O, CuO, MnO ₂ and WO ₃ is added in the range of 0.1 part by weight or more and 10 parts by weight or less.

In the dielectric ceramic composition, the relative permittivity (ε _r ) is preferably in the range of 10-50. In the dielectric ceramic composition, the Qf product is preferably 1000 GHz or more and 30,000 GHz or less.

In the dielectric ceramic composition, the temperature coefficient (τ _f ) of the resonance frequency is -50 or more and +50 ppm /
It is preferably in the range of ℃ or less. Next, the method for producing a dielectric ceramic of the present invention comprises calcium oxide, magnesium oxide, niobium oxide and titanium oxide, and has the general formula Ca
{(Mg _1/3 Nb _2/3 ) _1-x Ti _x } O ₃ (where 0 <x
≦ 0.50) in the range of 40 parts by weight or more and 98 parts by weight or less of the main component, and 2 parts by weight or more and 60 parts by weight or less of the accessory component containing one or more of SiO ₂ and B ₂ O ₃ . The composition of the ratios in the range includes MgO, NiO, CuO,
A method for producing a dielectric ceramic by subjecting a composition to which at least one oxide selected from MnO ₂ and WO ₃ is added in a range of 0.1 part by weight or more and 10 parts by weight or less. Before sintering, the subcomponents and additives are mixed and preheated.

In the above method, the temperature of the preheating treatment is preferably in the range of 500 to 900 ° C. Further, in the above method, the preheating treatment is performed at 1000 ° C.
It is preferable that the melting temperature is in the range of 1200 ° C. and the treatment is rapid cooling after melting.

In the above method, the main sintering temperature is
It is preferably in the range of 800 ° C to 1200 ° C. In addition, in the above-mentioned method, before the main sintering, 10
It is preferable to perform calcination and pulverize at a temperature in the range of 00 ° C to 1300 ° C.

In the above method, it is preferable that the preheating treatment is a treatment in which the subcomponents are melted in advance at a temperature in the range of 1000 ° C. to 1200 ° C., quenched, and then pulverized.

Next, according to the laminated high frequency device of the present invention,
A conductor and a dielectric, and at least part of the conductor
Is Cu, Cu alloy, Au, Au alloy, Ag and Ag
Consists of a metal selected from alloys and at least a dielectric layer
Some of them are calcium oxide, magnesium oxide, nitric oxide
With a composition that contains titanium oxide and titanium oxide as essential components
Therefore, the general formula Ca {(Mg_1/3Nb_2/3)_1-xTi_x｝ O
_Three (However, the main component represented by 0 <x ≦ 0.50) is 4
0 to 98 parts by weight, and SiO ₂ Also
Is B₂O_Three2 parts by weight or more of subcomponents containing one or more of
If the composition is composed of 60 parts by weight or less,
O, NiO, CuO, MnO₂ And WO_Three Chosen from
0.1 to 10 parts by weight of at least one oxide
It is characterized in that it is added in the following range.

In the laminated high frequency device, the dielectric constant (ε _r ) of the dielectric ceramic composition is preferably in the range of 10 to 50. In the laminated high frequency device, the dielectric ceramic composition has a Qf product of 1000
It is preferably in the range of GHz to 30,000 GHz.

In the laminated high frequency device, the temperature coefficient (τ _f ) of the resonance frequency of the dielectric ceramic composition.
Is preferably -50 or more and +50 ppm / ° C or less.

The dielectric ceramic composition of the present invention comprises calcium oxide, magnesium oxide, niobium oxide and titanium oxide, and has the general formula Ca {(Mg _1/3 Nb _2/3 ) _1-x.
Ti _x } O ₃ (where 0 <x ≦ 0.50), and the main component is in the range of 40 parts by weight or more and 98 parts by weight or less, and S
₂ subcomponents containing at least one of iO ₂ or B ₂ O ₃
At least one oxide selected from MgO, NiO, CuO, MnO ₂ and WO _{3 is} added to the composition in the range of not less than 60 parts by weight and not more than 0.1 parts by weight.
By adding 0 part by weight or less, it is possible to provide a dielectric ceramic composition having a lower sintering temperature, a stable composition, and a higher Q value. That is, Ca {(Mg _1/3 Nb _2/3 ) _1-x Ti _x } O ₃ having a high relative dielectric constant and an excellent microwave dielectric property is used as a main component, and sintering is promoted as an auxiliary component. 1 because it contains glass components
It is possible to realize a dielectric ceramic having a high relative dielectric constant, a high Q value, and a small temperature coefficient of resonance frequency by sintering at about 000 ° C. In addition, since the main component does not contain Bi ₂ O ₃ , the composition is stable and the stability of the dielectric properties with respect to the firing temperature is excellent.

Next, according to the production method of the present invention, the dielectric ceramic composition of the present invention can be efficiently and rationally produced.
In the laminated high-frequency device of the present invention, a compact and high-performance high-frequency device can be obtained by using the above-mentioned porcelain composition for the dielectric layer and using Cu, Au, Ag or their alloys for the conductor. .

[0017]

EXAMPLES The present invention will be described in more detail below with reference to examples. (Example 1) Example 1 illustrates the dielectric ceramic composition of the present invention. First, the synthesis of the powder used as the main component will be described. CaCO ₃ , MgO, Nb ₂ O ₅ , and TiO ₂ which are chemically high purity (purity 99% or more) were used as starting materials. After correcting the purity of the raw materials, the composition was weighed so that x has a predetermined value when expressed as Ca {(Mg _1/3 Nb _2/3 ) _1-x Ti _x } O ₃ . These powders were mixed with a zirconia cobblestone and pure water in a ball mill for 17 hours. After mixing, dry the slurry, put in an alumina crucible, 1000 to 1300 ℃
It was calcined for 2 hours. After crushing the calcined body, it was crushed for 17 hours by the above-mentioned ball mill and dried to obtain powder of the main component.

Next, the synthesis of powder used as an accessory component will be described. Highly chemically pure starting material (99% pure)
Above) SiO ₂ , B ₂ O ₃ , Al ₂ O ₃ , ZrO ₂ , B
aCO ₃ , SrCO ₃ , CaCO ₃ , Li ₂ O, ZnO and PbO were used. After correcting the purity of the raw materials, the raw materials were weighed so as to have various compositions shown in Table 1. These powders were ball-milled using ethanol as a solvent and dried. Put the mixed powder in the crucible, 1000-1
It was melted at 200 ° C. and quenched. After crushing, the mixture was crushed in the same manner as mixing and dried to obtain a powder of a subcomponent.
The volume average particle diameter of the obtained powder was 50 μm or less. Table 1 shows the composition of the synthesized subcomponents.

[0019]

[Table 1]

Chemically high purity as an additive (purity 99%
Above) MgO, NiO, CuO, MnO ₂ , WO ₃
Were weighed so as to have the compositions shown in Tables 2 and 3, and were wet-mixed in a ball mill together with the powders of the main component and subcomponents and dried. 6% by weight of a 5% by weight aqueous solution of polyvinyl alcohol was added to the obtained powder as a binder, mixed, and then granulated through a 32 mesh sieve to obtain 100
It was press molded into a columnar shape having a diameter of 13 mm and a thickness of about 5 mm at MPa. The molded body is heated at 600 ° C for 3 hours to incinerate the binder, and then put in a magnesia porcelain container, which is then capped.
Baking was carried out by holding at various temperatures from 00 to 1200 ° C. for 2 hours. Microwave dielectric properties of the sintered body fired at the temperature at which the density was highest were measured.

The relative dielectric constant is determined by sandwiching the sample with parallel conductor plates.
It was calculated from the resonance frequency of the TE ₀₁₁ mode and the sample shape.
The resonance frequency and the Q value were obtained by placing a sample on a support in the cavity and using the TE ₀₁ δ mode dielectric resonator method.
The resonance frequency was 4 to 8 GHz. Also, if the temperature is −
The resonance frequencies at 25 ° C., 20 ° C. and 85 ° C. were measured, and the temperature coefficient (τ _f ) was calculated by the least square method. The results are shown in Tables 2 and 3.

[0022]

[Table 2]

[0023]

[Table 3]

The reasons for limiting the composition of the main component and the subcomponents will be described below. _{Ca {(Mg 1/3 Nb} 2/3) 1-x T
If _{x in} i _x } O ₃ exceeds 0.5, the temperature coefficient of the resonance frequency becomes a large value exceeding +50, which is not preferable in practice. If the amount of the subcomponents is less than 2 parts by weight, the firing temperature is as high as 1200 ° C or higher, which is not suitable for the purpose of the present invention. If the amount of subcomponents exceeds 60 parts by weight, the Qf product is 10
It is not desirable because it becomes a small value of 00 GHz or less. Therefore, by limiting the composition of the main component and the sub-component as in claim 1, sintering at a low temperature of about 1000 ° C.
High relative dielectric constant before and after, high Qf over 1000 GHz
It was possible to obtain a small temperature coefficient of resonance frequency of -50 to +50 ppm / ° C.

From Tables 2 and 3, MgO, NiO, Cu
By adding one or more of O, MnO ₂ , and WO ₃ in a proportion of 0.1 to 10 parts by weight, the porcelain having the composition of the example of the present invention has a lower firing temperature and a higher Q value. All of them were improved to show good characteristics, and excellent microwave dielectric characteristics were obtained.

However, as in the case of the sample No. 12, in the case where CuO was added in an amount of more than 10 parts by weight as an additive, the firing temperature was lower than that in the case where no addition was made.
Since the value is also lowered, it is outside the scope of the claims of the present invention.

(Example 2) A method for producing a main component and a subcomponent,
The evaluation of the characteristics was performed in the same manner as in Example 1.

Chemically high purity as an additive (purity 99%
Above) MgO, NiO, CuO, MnO ₂ , WO ₃
Was weighed so as to have the compositions shown in Tables 4 and 5, and the powder was held at a temperature of 500 to 900 ° C. for 2 hours together with the powders of the subcomponents for heat treatment. After crushing, crush with a ball mill for 17 hours,
It was dried and mixed with the main component powder. The results are shown in Tables 4 and 5.

[0029]

[Table 4]

[0030]

[Table 5]

From Tables 4 and 5, MgO and N were added as additives.
One or more of iO, CuO, MnO ₂ , and WO ₃ is added to 0.
1 to 10 parts by weight in advance with subcomponents 5
By heat-treating at 00 to 900 ° C., the dielectric ceramics of this example have a lower firing temperature and a higher Q value, and all show good dielectric characteristics and excellent microwave characteristics. Was given.

The reasons for limiting the compositions of the main component and the sub-components are the same as in the first embodiment. Also, sample number 49
In the case of adding CuO as an additive in an amount of more than 10 parts by weight, as in Example 1, as in Example 1, the firing temperature is lowered but the Q value is also lowered. It was out of range.

(Example 3) A method for producing a main component and a subcomponent,
The evaluation of the characteristics was performed in the same manner as in Example 1. However, as additives, chemically pure MgO, NiO, CuO, MnO (purity 99% or more) is used.
₂ , the powder of WO ₃ was weighed so as to have the composition shown in Table 6 and Table 7,
1000 to 1 in the same manner as in Example 1 with subcomponents
It was melted at 200 ° C., rapidly cooled, then pulverized, dried, and mixed with the powder of the main component. The results are shown in Tables 6 and 7.

[0034]

[Table 6]

[0035]

[Table 7]

From Tables 6 and 7, MgO and N as additives were added.
One or more of iO, CuO, MnO ₂ , and WO ₃ is added to 0.
By pre-melting and quenching together with the sub-components in a proportion of 1 to 10 parts by weight, the dielectric ceramics of this example have a lower firing temperature, a higher Q value and a higher relative dielectric constant. , All showed good characteristics, and excellent microwave characteristics were obtained.

The reason why the compositions of the main component and the subcomponents are limited is the same as in the first embodiment. Further, as in the example of sample No. 80, in the case where CuO is added in an amount of more than 10 parts by weight as an additive, the firing value is lowered but the Q value is also lowered, as in Example 1. It is outside the scope of the claims of the present invention.

(Embodiment 4) Embodiment 4 explains a high frequency device of the present invention. As a laminated high frequency device, a dielectric resonator having a structure in which a stripline conductor is sandwiched between dielectric layers and a shield conductor and a coupling capacitor are built in was produced. The perspective view is shown in FIG. FIG.
1 is a sectional view taken along line I-I of FIG. 1, FIG. 3 is a sectional view taken along line II-II of FIG.
4A is a sectional view taken along line III-III in FIG. 2, and FIG.
The IV line sectional view and FIG. 4C show the VV line sectional view of FIG. Here, 1 is a dielectric layer, 2, 3 and 4 are internal conductors, 5, 6 and 7
Is an external electrode. The manufacturing method will be described below.

First, an organic binder, a solvent and a plasticizer were added to the composition of sample No. 10 in Table 2 and mixed to obtain a slurry, which was formed into a sheet by a doctor blade method. As the conductor metal, various metals shown in Table 8 were selected and kneaded with the vehicle to form a paste. When the conductor was CuO, CuO paste was used.

[0040]

[Table 8]

The composition of sample No. 47 in Table 4 and Table 6
The sheet of the composition of Sample No. 78 was prepared in the same manner. They are shown in Table 9 and Table 10, respectively.

[0042]

[Table 9]

[0043]

[Table 10]

After laminating a plurality of sheets, the conductor pattern 2 of FIG. 4 is screen-printed, a plurality of sheets are laminated thereon, a conductor pattern 3 is printed, and a plurality of sheets are further laminated to form a conductor pattern. 4 was printed, and a plurality of sheets were laminated and then pressure-bonded with a hot press. After cutting into individual elements, the binder was scattered by heat treatment in air. C
When the uO paste was used, it was heat-treated in H ₂ to reduce the conductor to Cu, and then fired in N ₂ . Other conductors were fired in air. The firing temperature was 900 ° C.

After coating the external electrodes 5, 6 and 7, they were baked in air or in N ₂ in the case of Cu to obtain a laminated dielectric resonator. The dimensions of the element after firing are vertical 8 mm and horizontal 4.
The conductor 3 as a strip line had a width of 1 mm and a length of 7 mm.

Ten elements were prepared for each conductor, and the average value was used as the characteristic. Tables 8, 9 and 10 show the resonance frequency and Q value of the obtained resonator. Table 8, Table 9,
As shown in Table 10, the resonance frequency is 2.0G
The Q value around Hz was as high as 170 or more, which was excellent even when any of the conductors made of Cu, Au, Ag and alloys thereof was used. The relative dielectric constant of the conventional low temperature firing substrate material is 8
Therefore, a stripline length of about 12 mm is required to obtain the resonance frequency with the same structure as the resonator of this embodiment. However, the dielectric constant of the dielectric of the present invention is 21 to
Since it was as high as 24, the length of the strip line was as short as 7 mm, and a very small size was obtained.

It is also possible to obtain a smaller resonant device by forming the strip line into a curved shape or a laminated shape. It is also possible to obtain a bandpass filter or the like by combining a plurality of these with a capacitor or the like.

Also, the inclusion of elements outside the claimed range may be within the range that does not adversely affect the dielectric properties.

[0049]

As described above, the dielectric ceramic composition of the present invention comprises calcium oxide, magnesium oxide, niobium oxide and titanium oxide, and has the general formula Ca {(Mg
_{1/3 Nb 2/3) 1-} x Ti x} O 3 ( however, 0 <x ≦ 0.5
Ratio of the main component represented by 0) in the range of 40 parts by weight or more and 98 parts by weight or less, and the range of 2 parts by weight or more and 60 parts by weight or less of the accessory component containing one or more of SiO ₂ or B ₂ O _3. A composition consisting of MgO, NiO, CuO, MnO ₂
And at least one oxide selected from WO ₃ is 0.
By adding 1 part by weight or more and 10 parts by weight or less, the sintering temperature can be lowered, the composition is stable,
A dielectric ceramic composition having a higher Q value can be provided.
That is, Ca {(Mg _1/3 Nb _2/3 ) _1-x Ti _x } O having a high relative dielectric constant as a main component and excellent microwave dielectric properties
_3, and a glass component that promotes sintering is contained as an auxiliary component, so that the dielectric porcelain sintered at about 1000 ° C. has a high relative dielectric constant, a high Q value, and a temperature coefficient of a small resonance frequency. Can be realized. In addition, since the main component does not contain Bi ₂ O ₃ , the composition is stable and the stability of the dielectric properties with respect to the firing temperature is excellent. As a result, a high-frequency device such as a filter or a duplexer can be reduced in size and function.

Next, according to the production method of the present invention, the dielectric ceramic composition of the present invention can be efficiently and rationally produced.
Further, according to the present invention, since the firing temperature is further lowered, the Q value is improved, the relative dielectric constant is as high as about 25, and the temperature coefficient (τ _f ) of the resonance frequency is small, the dielectric ceramic composition can be obtained.
It is possible to realize a laminated resonance device using u, Au, Ag, or the like as the internal conductor.

In particular, the fact that a small-sized and highly functional resonator can be manufactured greatly contributes to downsizing and high performance of high-frequency devices such as car phones and mobile phones. Further, the dielectric porcelain of the present invention can be used not only for a resonance device but also for a microwave circuit board, a porcelain multilayer capacitor, and the like, and has great industrial value.

[Brief description of drawings]

FIG. 1 is a perspective view of a dielectric resonator according to a fourth embodiment of the present invention.

FIG. 2 is a sectional view taken along line II of FIG.

FIG. 3 is a sectional view taken along line II-II of FIG. 1.

4 is a sectional view taken along line III-III in FIG. 2, and B is IV in FIG.
-IV line sectional drawing, C is the VV sectional view taken on the line of FIG.

[Explanation of symbols]

 1 Dielectric layer 2, 3, 4 Inner conductor 5, 6, 7 External electrode

Front page continuation (72) Inventor Tatsuya Inoue 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (12)

[Claims] 1. Calcium oxide, magnesium oxide, acid
Composition containing niobium oxide and titanium oxide as essential constituents
Of the general formula Ca {(Mg_1/3Nb_2/3) _1-xT
i_x｝ O_Three (However, 0 <x ≦ 0.50)
In the range of 40 to 98 parts by weight of the component, and Si
O₂ Or B₂O_ThreeThe secondary component containing one or more of the
Composition comprising a proportion in the range of not less than 60 parts by weight and not less than 60 parts by weight
In addition, MgO, NiO, CuO, MnO₂ And WO_Three From
0.1 parts by weight or more of at least one oxide selected 1
Induction characterized by being added in a range of 0 parts by weight or less
Electric porcelain composition. 2. The dielectric ceramic composition according to claim 1, which has a relative permittivity (ε _r ) in the range of 10 to 50. 3. The Qf product is 1000 GHz or more and 3000.
The dielectric ceramic composition according to claim 1, which has a frequency of 0 GHz or less. 4. Calcium oxide, magnesium oxide, niobium oxide and titanium oxide, which have the general formula Ca {(M
_{g 1/3 Nb 2/3) 1-x} Ti x} O 3 ( however, 0 <x ≦ 0.
50) A proportion of the main component represented by 40) in the range of 40 parts by weight or more and 98 parts by weight or less, and the proportion of the accessory component containing one or more of SiO ₂ or B ₂ O ₃ in the range of 2 parts by weight or more and 60 parts by weight or less. A composition consisting of MgO, NiO, CuO, MnO
A method for producing a dielectric ceramic by subjecting a composition to which at least one oxide selected from ₂ and WO ₃ is added in a range of 0.1 part by weight or more and 10 parts by weight or less. A method for manufacturing a dielectric porcelain, characterized in that the auxiliary component and the additive are mixed and preheated before binding. 5. The temperature of the preheat treatment is 500 to 900.
The method for manufacturing a dielectric ceramic according to claim 4, wherein the temperature is in the range of ° C. 6. The preheating treatment is performed at 1000 ° C. to 1200 ° C.
The method for producing a dielectric ceramic according to claim 4, wherein the melting temperature is in the range of ° C, and the cooling is performed after the melting. 7. The main sintering temperature is 800 ° C. or higher and 1200 ° C.
The method for manufacturing a dielectric ceramic according to claim 4, wherein 8. Prior to the main sintering, the main component of 1000.degree.
The calcination is performed at a temperature in the range of 1300 ° C., and the pulverization is performed.
The method for manufacturing a dielectric ceramic according to item 1. 9. The preheating treatment is carried out by adding 1000 parts of subcomponents in advance.
The method for producing a dielectric ceramic according to claim 4, which is a process of melting at a temperature in the range of ℃ to 1200 ° C, quenching, and then crushing. 10. A conductor and a dielectric, at least a part of the conductor being composed of a metal selected from Cu, Cu alloy, Au, Au alloy, Ag and Ag alloy, and at least a part of the dielectric layer, calcium oxide, magnesium oxide, a composition as essential components niobium oxide and titanium oxide, the general formula _{Ca {(Mg 1/3 Nb} 2/3)
_{1-x Ti x} O 3} ( however, 0 <x ≦ 0.50) in the range main component is less than 98 parts by weight 40 parts by weight or more expressed, and one or more of SiO ₂ or B ₂ O ₃ In an amount of at least one oxide selected from MgO, NiO, CuO, MnO ₂ and WO _3, 0.1 to 10 parts by weight is added to the composition having a proportion of the sub-component containing 2 to 60 parts by weight. A laminated high-frequency device characterized by being added in an amount of not more than a weight part. 11. The relative permittivity (ε _r ) of the dielectric ceramic composition
Is in the range of 10 to 50. The laminated high frequency device according to claim 10. 12. The Qf product of the dielectric ceramic composition is 100.
The laminated high-frequency device according to claim 10, which has a frequency of 0 GHz or more and 30000 GHz or less.