JPH0964128A - Burn-in method and apparatus - Google Patents

Abstract

(57) [Summary] [Object] To provide a burn-in device capable of accurately measuring the temperature of a semiconductor device. A liquid L that heats a semiconductor device 2 to a plurality of temperatures, and a power supply unit 1 that applies a power supply voltage to the semiconductor device 2.
1, a voltage measuring unit 12 that measures the output voltage of the thermal diode 2a formed in the semiconductor device 2, a plurality of types of heating temperatures when the power supply voltage is not applied to the semiconductor device 2, and the thermal diodes corresponding thereto. 2a, the temperature characteristic of the semiconductor device 2 is obtained, and at the time of burn-in, the temperature of the semiconductor device 2 is calculated by applying the output voltage of the thermal diode 2a to the temperature characteristic. Is.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a burn-in method and apparatus, and more particularly to a technique effective when applied to temperature control during burn-in of a semiconductor device to be inspected.

[0002]

2. Description of the Related Art A burn-in device is known as a test device for removing a semiconductor device which causes a failure depending on time and stress due to inherent defects and manufacturing variations. In this burn-in system, semiconductor device
Screening is performed while applying a power supply voltage while heating to about 00 ° C., applying a current to the device to apply temperature and voltage stress.

As an example in which such a technique relating to burn-in is described in detail, for example, press journal, "Monthly Semiconductor World," 1993 8
There is a monthly issue (issued on July 20, 1993), P121 to P123.

The temperature of the semiconductor device at the time of burn-in is generally higher than the temperature of the gas or liquid to be heated due to the heat generation of the device itself by the supply of the power supply potential.
Therefore, the output voltage of the heat-sensitive diode formed on the chip is measured, and this value is applied to the typical temperature characteristics of the heat-sensitive diode (relationship between the output voltage of the heat-sensitive diode and the temperature of the semiconductor device) that has been prepared in advance. It is conceivable to determine the temperature of the device.

[0005]

However, since the temperature characteristics of the thermal diode have individual variations, an error may occur when the temperature of the semiconductor device is obtained by using a typical one as described above. Therefore, accurate measurement has not been made.

Therefore, an object of the present invention is to provide a technique capable of accurately measuring the temperature of a semiconductor device during burn-in.

[0007] The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0008]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, in the burn-in method according to the present invention, the temperature characteristic of the semiconductor device is obtained in advance from the output voltage of the heat-sensitive diode of the semiconductor device and the heating temperature when the power supply voltage is not applied, and the output voltage of the heat-sensitive diode is obtained. Is measured and applied to the temperature characteristic to calculate the temperature of the semiconductor device, and the burn-in is performed.

In the burn-in device according to the present invention, a heating medium that heats the semiconductor device to a plurality of temperatures, a power supply unit that applies a power supply voltage to the semiconductor device, and an output voltage of a thermal diode formed in the semiconductor device. A voltage measuring section for measuring, a plurality of types of heating temperatures when the power supply voltage is not applied to the semiconductor device, and the output voltage value of the heat-sensitive diode corresponding thereto are obtained to obtain the temperature characteristics peculiar to the semiconductor device,
At the time of burn-in, there is provided a temperature calculation unit for calculating the temperature of the semiconductor device by applying the output voltage of the thermal diode to the temperature characteristic. In this case, gas or liquid can be used as the heating medium.

[0011]

According to the above-mentioned means, the temperature characteristic peculiar to each semiconductor device to be burned in is obtained, and the output voltage of the thermal diode is applied to this temperature characteristic at the time of burn-in to calculate the temperature of the semiconductor device. Therefore, the temperature of the semiconductor device during burn-in can be accurately measured.

[0012]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a schematic diagram showing a burn-in device according to an embodiment of the present invention, and FIG. 2 shows a temperature of a semiconductor device inspected by the burn-in device and an output voltage of a thermal diode formed in the semiconductor device. It is a graph which shows a relationship.

The burn-in device of this embodiment is provided with the inspection jig 1.
It has a heating mechanism for heating the semiconductor device 2 held by. As shown in the figure, this heating mechanism includes first to first liquids L that are different in temperature as a heating medium.
It has a third tank 3a, 3b, 3c, for example, the first
The temperature of the liquid L in the tank 3a is 50 ° C, and the temperature in the second tank 3b is 10 ° C.
The temperature inside the third tank 3c is adjusted to 0 ° C and the temperature inside the third tank 3c is adjusted to 150 ° C by the internal heaters. Note that a gas can be used as the heating medium, and the number of tanks is not limited to three, and a plurality of tanks may be provided.

In order to spray the liquid L onto the semiconductor device 2, a supply pipe 4 is provided between the tanks 3a, 3b, 3c and the semiconductor device 2.
Is provided. One side of this supply pipe 4 is in each tank 3
They are fixed to a, 3b, and 3c, respectively, and are assembled via the switching valve 5 and the other side is directed to the semiconductor device 2. In the middle of the supply pipe 4, the tanks 3a, 3b,
A pump 6 for delivering the liquid L in 3c toward the semiconductor device 2 is provided. Further, a jet nozzle 7 is attached to the semiconductor device 2 side of the supply pipe 4.
Thus, when the switching valve 5 is operated to select, for example, the first tank 3a, the liquid L at 50 ° C. is jetted to the semiconductor device 2.

A recovery pipe 8 is provided between the tanks 3 a, 3 b, 3 c and the semiconductor device 2 in order to recover the liquid L sprayed on the semiconductor device 2. That is, one side of this recovery pipe 8 is attached to the recovery plate 9 arranged at the drop position of the jetted liquid L, is branched into three via the switching valve 10, and the other side is connected to each tank 3a, 3b, 3c. Is attached to. The switching valve 10 is linked to a switching valve 5 attached to the supply pipe 4 to operate. For example, the switching valve 5 is the first valve.
When the tank 3a is selected, the switching valve 10 is automatically set to the position for selecting the first tank 3a.

The burn-in device includes a power supply unit 11 for applying a power supply voltage to the semiconductor device 2, a voltage measuring unit 12 for measuring the output voltage of the thermal diode 2a formed in the semiconductor device 2, and A temperature measuring unit 13 is provided for measuring the temperature of the liquid L to be ejected at the position of the ejection nozzle 7, and a temperature calculating unit to which the output voltage value of the voltage measuring unit 12 and the liquid temperature of the temperature measuring unit 13 are input. Have fourteen. The temperature calculation unit 14 obtains the temperature characteristic peculiar to the semiconductor device 2 to be inspected from the output voltage value of the thermal diode 2a under a predetermined temperature when the power supply voltage is not applied to the semiconductor device 2, and at the time of burn-in, The temperature of the semiconductor device 2 is calculated by applying the output voltage of the thermal diode 2a to this temperature characteristic (see FIG. 2). A temperature display unit 15 for displaying the calculated temperature is connected to the temperature calculation unit 14.

The temperature measurement of the semiconductor device 2 by such a burn-in device is performed as follows.

First, the tank 3 is operated without applying a power supply voltage.
The liquid L from the liquids a, 3b, and 3c is used to heat the semiconductor device 2, and the relationship between the temperature of the semiconductor device 2 and the output voltage of the formed thermal diode 2a, that is, the temperature characteristic of the semiconductor device 2 is obtained. Since the output voltage of the thermal diode 2a has a proportional relationship with the temperature, it can be obtained by heating to a plurality of types, for example, two types of temperatures, and obtaining the output voltage at each time.

In this embodiment, three tanks 3a, 3
The semiconductor device 2 is heated to three temperatures, that is, 50 ° C., 100 ° C., and 150 ° C. with the liquid L of b and 3 c, and the output voltage at this time is measured by the voltage measuring unit 12. For example, the output voltage when heated to 50 ℃ is 500 mV, when 100 ℃ is 1000 mV,
FIG. 2 shows the relationship between the temperature of the semiconductor device 2 and the output voltage of the thermal diode 2a, which is obtained by plotting this at 1500 ° C. at 1500 mV. Then, the temperature calculation unit 14 including a microcomputer includes an output voltage value (that is, 500 mV, 1000 mV, 1500 mV) of the thermal diode 2a measured by the voltage measurement unit 12 and a liquid temperature of the liquid L measured by the temperature measurement unit 13. (That is, 50 ℃, 100 ℃, 150
C) is input and the temperature characteristics as shown in FIG. 2 are stored in the memory from these data.

After obtaining the temperature characteristics, burn-in is started.

Since the power supply voltage is applied to the semiconductor device 2 by the power supply unit 11 to exceed the rated voltage and burn-in is performed, for example, even if the liquid L at 100 ° C. is jetted from the second tank 3b, the semiconductor device 2 Temperature is 100 ℃
That's all. And, especially when the amount of heat generation is large, the tendency becomes remarkable.

Here, the thermal diode 2 at the time of burn-in
It is assumed that the output voltage of a is measured by the voltage measuring unit 12 to be 1200 mV, for example. As described above, since the temperature calculation unit 14 stores the temperature characteristics as shown in FIG. 2, the temperature of the semiconductor device 2 when the output voltage is 1200 mV is 1
Calculated as 20 ° C (see Figure 2). Then, burn-in is performed while measuring the temperature of the semiconductor device 2 in this manner.

After the burn-in to the semiconductor device 2 is completed, this is removed from the inspection jig and the next semiconductor device is set. Then, the burn-in is performed after obtaining the temperature characteristics in the same manner.

As described above, according to the burn-in device of this embodiment, the temperature characteristic peculiar to each of the semiconductor devices 2 to be burned in is obtained, and the output voltage of the thermal diode 2a is applied to this temperature characteristic at the time of burn-in. Since the temperature of the device 2 is calculated, the temperature of the semiconductor device 2 during burn-in can be accurately measured.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention. Needless to say.

[0027]

The effects obtained by typical ones of the inventions disclosed in the present application will be briefly described as follows.

(1) That is, according to the burn-in technique of the present invention, a unique temperature characteristic is obtained for each semiconductor device to be burned in, and at the time of burn-in, the output voltage of the thermal diode is applied to this temperature characteristic to obtain the semiconductor device. Therefore, the temperature of the semiconductor device at the time of burn-in can be accurately measured.

(2) Further, since it becomes possible to measure the temperature difference between the semiconductor devices when the semiconductor devices having the same specifications are burned in under the same conditions, it is possible to judge whether the heat dissipation characteristics of the semiconductor devices are good or bad. It will be possible.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a burn-in device according to an embodiment of the present invention.

FIG. 2 is a graph showing the relationship between the temperature of a semiconductor device tested by the burn-in system of FIG. 1 and the output voltage of a thermal diode formed in the semiconductor device.

[Explanation of symbols]

 1 inspection jig 2 semiconductor device 2a thermal diode 3a first tank 3b second tank 3c third tank 4 supply pipe 5 switching valve 6 pump 7 injection nozzle 8 recovery pipe 9 recovery plate 10 switching valve 11 power supply unit 12 Voltage measurement unit 13 Temperature measurement unit 14 Temperature calculation unit 15 Temperature display unit L Liquid (heating medium)

Claims (3)

[Claims] 1. A temperature characteristic of the semiconductor device is obtained in advance from the output voltage of the heat-sensitive diode of the semiconductor device and the heating temperature when a power supply voltage is not applied, and the output voltage of the heat-sensitive diode is measured and measured. Is applied to the temperature characteristic to calculate the temperature of the semiconductor device, and the burn-in is performed. 2. A heating medium for heating a semiconductor device to a plurality of temperatures, a power supply unit for applying a power supply voltage to the semiconductor device, and a voltage measurement for measuring an output voltage of a thermal diode formed in the semiconductor device. Section, the temperature characteristic of the semiconductor device is obtained from a plurality of types of heating temperatures when the power supply voltage is not applied to the semiconductor device and the output voltage value of the thermal diode corresponding thereto,
A burn-in device comprising: a temperature calculation unit that calculates the temperature of the semiconductor device by applying the output voltage of the thermal diode to the temperature characteristic at the time of burn-in. 3. The burn-in device according to claim 2, wherein the heating medium is a gas or a liquid.