JPH0971488A - Production of ceramic substrate - Google Patents
Production of ceramic substrateInfo
- Publication number
- JPH0971488A JPH0971488A JP22555495A JP22555495A JPH0971488A JP H0971488 A JPH0971488 A JP H0971488A JP 22555495 A JP22555495 A JP 22555495A JP 22555495 A JP22555495 A JP 22555495A JP H0971488 A JPH0971488 A JP H0971488A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- break
- ceramic substrates
- stacked
- downward
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 239000000919 ceramic Substances 0.000 title claims abstract description 75
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000010304 firing Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 description 9
- 238000007796 conventional method Methods 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Landscapes
- Devices For Post-Treatments, Processing, Supply, Discharge, And Other Processes (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、セラミック製基板片の
表面に抵抗膜を形成して成るチップ抵抗器とか、又は、
セラミック製基板片の表面に印字用の発熱抵抗体を形成
して成るサーマルプリントヘッド、或いは、セラミック
製基板片の表面に各種の電子部品を搭載して成るハイブ
リット集積回路等において、前記セラミック製基板片の
製造に使用するセラミック基板を製造する方法に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip resistor formed by forming a resistive film on the surface of a ceramic substrate piece, or
In a thermal print head in which a heating resistor for printing is formed on the surface of a ceramic substrate piece, or in a hybrid integrated circuit in which various electronic parts are mounted on the surface of a ceramic substrate piece, the ceramic substrate The present invention relates to a method for manufacturing a ceramic substrate used for manufacturing a piece.
【0002】[0002]
【従来の技術】従来、チップ抵抗器等におけるセラミッ
ク製基板片の製造に際して使用するセラミック基板は、
以下に述べるような方法で製造している。すなわち、先
づ、図5に示すように、セラミック基板1の表面に、未
だ柔らかいグリーンシートの状態で、当該セラミック基
板1を多数個の基板片2ごとにブレイクするためのブレ
イク溝3を刻設し、次いで、生産性の向上を図ることの
ために、セラミック基板1の複数枚を、ブレイク溝3付
き表面を上向きの方向に揃えるか、或いは下向きの方向
に揃えた状態で、図6に示すように、積層状に積み重
ね、この状態で加熱焼成炉に入れ、例えば約100〜5
00℃の温度に加熱して脱脂処理したのち、例えば、約
1500〜1550℃と言う高い温度で焼成することに
よって製造している。2. Description of the Related Art Conventionally, a ceramic substrate used for manufacturing a ceramic substrate piece for a chip resistor or the like is
It is manufactured by the method as described below. That is, first, as shown in FIG. 5, a break groove 3 is formed on the surface of the ceramic substrate 1 so as to break the ceramic substrate 1 into a large number of substrate pieces 2 in the state of a soft green sheet. Then, in order to improve productivity, a plurality of ceramic substrates 1 are shown in FIG. 6 with their surfaces having the break grooves 3 aligned in the upward direction or in the downward direction. As described above, they are stacked and placed in a heating and firing furnace in this state, for example, about 100 to 5
It is manufactured by heating to a temperature of 00 ° C. for degreasing treatment, and then firing at a high temperature of about 1500 to 1550 ° C., for example.
【0003】[0003]
【発明が解決しようとする課題】ところで、グリーンシ
ートの状態でブレイク溝3を刻設した後のセラミック基
板1を高い温度で焼成するに際して、当該セラミック基
板における両表面のうちブレイク溝3を刻設した側の表
面が、ブレイク溝3を刻設していない反対側の表面より
も大きく収縮する傾向を呈すると言うように、両表面の
間に収縮差ができる。By the way, when firing the ceramic substrate 1 after engraving the break groove 3 in the state of the green sheet at a high temperature, the break groove 3 is engraved on both surfaces of the ceramic substrate. There is a shrinkage difference between the two surfaces so that the surface on the opposite side tends to shrink more than the surface on the opposite side where the break groove 3 is not engraved.
【0004】従って、グリーンシートの状態でブレイク
溝3を刻設した後のセラミック基板1の複数枚を、前記
したように、ブレイク溝3付き表面を上向き又は下向き
の同じ方向に揃えて積層状に積み重ね、この積み重ね状
態で焼成すると言う方法では、各セラミック基板1は、
その焼成に際しての両表面の間における収縮差のため
に、図6に二点鎖線で示すように、一斉に、ブレイク溝
3を備えた表面を内側とする方向に湾曲状に反り変形す
ることになる。Therefore, as described above, a plurality of ceramic substrates 1 on which the break grooves 3 have been engraved in the state of the green sheets are laminated so that the surfaces with the break grooves 3 are aligned in the same upward or downward direction. In the method of stacking and firing in this stacked state, each ceramic substrate 1 is
Due to the difference in contraction between the two surfaces during the firing, as shown by the chain double-dashed line in FIG. 6, the surfaces provided with the break grooves 3 are simultaneously warped and deformed in a curved direction. Become.
【0005】そこで、従来は、高温での焼成を完了した
セラミック基板を、その上にウエイトを載せることで反
りを平面状に延ばした状態で、前記焼成温度よりも少し
低い温度(約1300℃程度)に加熱することによっ
て、前記の反り変形を矯正することを、全てのセラミッ
ク基板について行うようにしているが、前記した従来の
方法では、各セラミック基板における反りが同じ方向で
あることにより、その反り変形が大きいために、前記し
た反り変形の矯正に長い加熱時間を必要とすることに加
えて、各セラミック基板の反りを平面状に延ばすときに
おいて、セラミック基板がその表面におけるブレイク溝
に沿って割れる頻度が高く、従って、不良品の発生率が
高いから、製造コストが可成りアップすると言う問題が
あった。Therefore, conventionally, a ceramic substrate that has been fired at a high temperature has a warp extended flat by placing a weight on the ceramic substrate, and the temperature is slightly lower than the firing temperature (about 1300 ° C.). ), The warp deformation is corrected for all the ceramic substrates, but in the conventional method described above, since the warp in each ceramic substrate is in the same direction, Since the warp deformation is large, in addition to requiring a long heating time to correct the warp deformation described above, when the warp of each ceramic substrate is extended in a flat shape, the ceramic substrate follows a break groove on its surface. Since there is a high frequency of cracking, and therefore the rate of defective products is high, there is a problem that the manufacturing cost is considerably increased.
【0006】また、セラミック基板に対するブレイク溝
を、当該セラミック基板の表裏両面に刻設する場合に
は、一方の表面におけるブレイク溝を深く、他方の表面
におけるブレイク溝を浅くするように構成することが一
般的であり、この場合においても、従来は、セラミック
基板の複数枚を、その深いブレイク溝を有する表面が上
向き又は下向きになるように揃えて積層状に積み重ね、
この積み重ね状態で高温焼成するようにしているが、高
温焼成に際しては、セラミック基板の表面のうち深いブ
レイク溝を備えた表面が、浅いブレイク溝を備えた表面
によりも大きく収縮することにより、各セラミック基板
が、深いブレイク溝を備えた表面の方に大きく反り変形
するから、同様の問題が存在するのであった。When the break groove for the ceramic substrate is formed on both the front and back surfaces of the ceramic substrate, the break groove on one surface may be deep and the break groove on the other surface may be shallow. In general, even in this case, conventionally, a plurality of ceramic substrates are stacked in a layered manner with the surfaces having the deep break grooves facing upward or downward,
The stack is fired at a high temperature, but during the high temperature firing, the surface of the ceramic substrate with deep break grooves shrinks more than the surface with shallow break grooves, so that each ceramic A similar problem exists because the substrate warps significantly toward the surface with deep break grooves.
【0007】本発明は、前記高温での焼成に際して発生
する反り変形を小さくできるようにしたセラミック基板
の製造方法を提供することを技術的課題とするものであ
る。It is a technical object of the present invention to provide a method for manufacturing a ceramic substrate which can reduce the warp deformation that occurs during the firing at the high temperature.
【0008】[0008]
【課題を解決するための手段】この技術的課題を達成す
るため本発明の「請求項1」は、「グリーンシートの状
態で一方の表面にブレイク溝を刻設したセラミック基板
の複数枚を、ブレイク溝を備えた表面が交互に上向きと
下向きとになるように積層状に積み重ね、この積み重ね
状態で、高温で焼成することを特徴とする。」ものであ
る。In order to achieve this technical object, "Claim 1" of the present invention states that "a plurality of ceramic substrates having a break groove formed on one surface in the state of a green sheet, It is characterized in that the surfaces provided with break grooves are alternately stacked upward and downward so as to be stacked, and in this stacked state, firing is performed at a high temperature. "
【0009】また、本発明の「請求項2」は、「グリー
ンシートの状態で一方の表面に深いブレイク溝を他方の
表面に浅いブレイク溝を各々刻設したセラミック基板の
複数枚を、深いブレイク溝を備えた表面が交互に上向き
と下向きとになるように積層状に積み重ね、この積み重
ね状態で、高温で焼成することを特徴とする。」もので
ある。In addition, the "claim 2" of the present invention is that "a plurality of ceramic substrates each having a deep break groove on one surface and a shallow break groove on the other surface in the state of a green sheet are deep-breaked. It is characterized in that the surfaces provided with grooves are stacked in a laminated manner so that the surfaces are alternately turned upward and downward, and in this stacked state, firing is carried out at a high temperature. "
【0010】[0010]
【作 用】前記「請求項1」のように、一方の表面に
ブレイク溝を刻設したセラミック基板の複数枚を、ブレ
イク溝を備えた表面が交互に上向きと下向きとになるよ
うに積層状に積み重ね、この積み重ね状態で、高温で焼
成することにより、高温での焼成に際して、各セラミッ
ク基板の各々に発生する反り変形は、相隣接するセラミ
ック基板の相互間について逆向きになって、互いにその
反り変形を抑制するように働くことになるから、各セラ
ミック基板における反り変形を、従来のように各セラミ
ック基板の複数枚をそのブレイク溝が上向き又は下向き
に揃えて積み重ねた場合よりも小さくすることができる
のである。[Operation] As described in "Claim 1", a plurality of ceramic substrates having break grooves engraved on one surface thereof are laminated so that the surfaces having break grooves are alternately turned upward and downward. By stacking in a stack and firing at a high temperature in this stacked state, the warp deformations that occur in each of the ceramic substrates during firing at a high temperature become opposite to each other between adjacent ceramic substrates, and Since it works to suppress warp deformation, make warp deformation in each ceramic substrate smaller than when stacking multiple breakers in each ceramic substrate with their break grooves aligned upward or downward as in the conventional case. Can be done.
【0011】また、セラミック基板における一方の表面
に深くブレイク溝を、他方の表面に浅いブレイク溝を刻
設する場合にも、「請求項2」のように、深いブレイク
溝を備えた表面が交互に上向きと下向きとになるように
積層状に積み重ね、この積み重ね状態で、高温で焼成す
ることにより、高温での焼成に際して、各セラミック基
板の各々に発生する反り変形は、相隣接するセラミック
基板の相互間について逆向きになって、互いにその反り
変形を抑制するように働くことになるから、各セラミッ
ク基板における反り変形を、従来のように各セラミック
基板の複数枚を、その深いブレイク溝が上向き又は下向
きに揃えて積み重ねた場合によりも小さくすることがで
きるのである。When a deep break groove is formed on one surface of the ceramic substrate and a shallow break groove is formed on the other surface of the ceramic substrate, the surfaces having the deep break grooves are alternately arranged as in "Claim 2". By stacking in a laminated manner so that it faces upward and downward, and firing in this stacked state at high temperature, the warp deformation that occurs in each ceramic substrate during firing at high temperature is Since they are in opposite directions to each other and work to suppress the warp deformation, the warp deformation of each ceramic substrate is increased as in the conventional case, and the deep break groove faces upward. Alternatively, the size can be made smaller than in the case of stacking in a downward alignment.
【0012】[0012]
【発明の効果】従って、本発明によると、ブレイク溝付
きセラミック基板を高温焼成するに場合に発生する反り
変形を小さくすることができることにより、この焼成後
における反り変形の矯正に要する加熱時間を短くできる
ことに加えて、反り変形に矯正に際して発生する割れが
少なく、ひいては、不良品の発生率を少なくできるか
ら、セラミック基板の製造コストを大幅に低減できる効
果を有する。As described above, according to the present invention, the warp deformation generated when the ceramic substrate with break grooves is fired at a high temperature can be reduced, so that the heating time required to correct the warp deformation after firing can be shortened. In addition to this, there are few cracks that occur during correction of warp deformation, and the incidence of defective products can be reduced, which has the effect of significantly reducing the manufacturing cost of the ceramic substrate.
【0013】[0013]
【実施例】以下、本発明の実施例を図面ついて説明す
る。図1〜図3は、第1の実施例を示すもので、この第
1の実施例は、セラミック基板における一方の表面にの
みブレイク溝を刻設した場合である。すなわち、グリー
ンシートの状態で一方の表面にのみブレイク溝3を刻設
したセラミック基板1の複数枚を、積層状に積み重ねる
に際して、この各セラミック基板1のうち下から数えて
奇数番目のセラミック基板1を、そのブレイク溝3を備
えた表面が上向きになるようにする一方、偶数番目のセ
ラミック基板1を、そのブレイク溝3を備えた表面が下
向きになるように裏返して積み重ねると言うように、セ
ラミック基板1の複数枚を、ブレイク溝3を備えた表面
が交互に上向きと下向きとになるように積層状に積み重
ね、この積み重ね状態で、約100〜500℃の温度に
加熱する言う脱脂処理を行ったのち、約1500〜15
50℃と言う高い温度で焼成するのである。Embodiments of the present invention will be described below with reference to the drawings. 1 to 3 show a first embodiment, which is a case where a break groove is formed only on one surface of a ceramic substrate. That is, when stacking a plurality of ceramic substrates 1 in which the break grooves 3 are engraved only on one surface in the state of a green sheet in a stacked manner, an odd-numbered ceramic substrate 1 among the ceramic substrates 1 is counted from the bottom. So that the surface with the break groove 3 faces upward, while the even-numbered ceramic substrates 1 are turned upside down so that the surface with the break groove 3 faces downward. A plurality of substrates 1 are stacked in a laminated manner such that the surfaces having the break grooves 3 are alternately facing upward and downward, and in this stacked state, a degreasing treatment of heating to a temperature of about 100 to 500 ° C. is performed. After that, about 1500-15
It is fired at a high temperature of 50 ° C.
【0014】すると、この高温での焼成に際して、各セ
ラミック基板1の各々に発生する反り変形は、相隣接す
るセラミック基板1の相互間について逆向きになって、
互いにその反り変形を抑制するように働くことになるか
ら、各セラミック基板1における反り変形を、従来のよ
うに各セラミック基板の複数枚をそのブレイク溝が上向
き又は下向きに揃えて積み重ねた場合よりも小さくする
ことができるのである。Then, during the firing at the high temperature, the warp deformations generated in the respective ceramic substrates 1 are opposite to each other between the adjacent ceramic substrates 1.
Since they act to suppress the warp deformations of each other, the warp deformations of the respective ceramic substrates 1 are more likely to occur than in the conventional case where a plurality of ceramic substrates are stacked with their break grooves aligned upward or downward. It can be made smaller.
【0015】このように、各セラミック基板1に発生す
る反り変形を小さいから、高温での焼成を完了したセラ
ミック基板を、その上にウエイトを載せることで反りを
平面状に延ばした状態で、前記焼成温度よりも少し低い
温度(約1300℃程度)に加熱することによって、前
記の反り変形を矯正するに際して、その加熱時間を可成
り短くすることができると共に、反りを平面状に延ばし
たときにブレイク溝3に沿って割れることを確実に低減
できるのである。As described above, since the warp deformation generated in each ceramic substrate 1 is small, the ceramic substrate that has been fired at a high temperature is placed in a flat shape by placing a weight on the ceramic substrate, By heating to a temperature slightly lower than the firing temperature (about 1300 ° C.), the heating time can be shortened considerably when correcting the above warp deformation, and when the warp is extended to a flat surface. It is possible to reliably reduce cracking along the break groove 3.
【0016】また、図4に示す第2の実施例は、グリー
ンシートの状態で一方の表面に深いブレイク溝3′を他
方の表面に浅いブレイク溝3″を各々刻設したセラミッ
ク基板1′の場合である。すなわち、前記セラミック基
板3′の複数枚を、積層状に積み重ねるに際して、この
各セラミック基板1′のうち下から数えて奇数番目のセ
ラミック基板1′を、深いブレイク溝3′を備えた表面
が上向きに浅いブレイク溝3″を備えた表面が下向きに
なるようにする一方、偶数番目のセラミック基板1′
を、深いブレイク溝3′を備えた表面が下向きに浅いブ
レイク溝3″を備えた表面が上向きになるように裏返し
て積み重ねると言うように、セラミック基板1′の複数
枚を、深いブレイク溝3′を備えた表面が交互に上向き
と下向きとになるように積層状に積み重ね、この積み重
ね状態で、約100〜500℃の温度に加熱する言う脱
脂処理を行ったのち、約1500〜1550℃と言う高
い温度で焼成するのである。The second embodiment shown in FIG. 4 is a ceramic substrate 1'in which a deep break groove 3'is engraved on one surface and a shallow break groove 3 "is engraved on the other surface in the state of a green sheet. That is, when stacking a plurality of the ceramic substrates 3'in a laminated form, an odd-numbered ceramic substrate 1'counted from the bottom of each ceramic substrate 1'is provided with a deep break groove 3 '. The upper surface is provided with a shallow break groove 3 ″ so that the surface faces downward, while the even-numbered ceramic substrate 1 ′
Are stacked upside down such that the surface with the deep break groove 3 ′ faces downward and the surface with the shallow break groove 3 ″ faces upward, so that a plurality of ceramic substrates 1 ′ are stacked. ′ Is stacked in such a manner that the surfaces are alternately turned upward and downward, and in this stacked state, a degreasing treatment of heating to a temperature of about 100 to 500 ° C. is performed, and then about 1500 to 1550 ° C. It is fired at the so-called high temperature.
【0017】この場合においても、高温での焼成に際し
て、各セラミック基板1′の各々に発生する反り変形
は、相隣接するセラミック基板1′の相互間について逆
向きになって、互いにその反り変形を抑制するように働
くことになるから、各セラミック基板′における反り変
形を、従来のように各セラミック基板の複数枚を、その
深いブレイク溝が上向き又は下向きに揃えて積み重ねた
場合によりも小さくすることができるのである。Also in this case, the warp deformations generated in the respective ceramic substrates 1'during firing at a high temperature are opposite to each other between the adjacent ceramic substrates 1 ', and the warp deformations are mutually caused. Since it works to suppress, warp deformation in each ceramic substrate 'should be made smaller than in the case where a plurality of ceramic substrates are stacked with their deep break grooves aligned upward or downward as in the conventional case. Can be done.
【図1】本発明における第1の実施例の方法によるセラ
ミック基板の斜視図である。FIG. 1 is a perspective view of a ceramic substrate according to a method of a first embodiment of the present invention.
【図2】図1の縦断正面図である。2 is a vertical front view of FIG. 1. FIG.
【図3】本発明における第1の実施例の方法による積み
重ねた状態を示す縦断正面図である。FIG. 3 is a vertical sectional front view showing a stacked state according to the method of the first embodiment of the present invention.
【図4】本発明における第2の実施例の方法を示す縦断
正面図である。FIG. 4 is a vertical sectional front view showing a method of a second embodiment of the present invention.
【図5】従来の方法によるセラミック基板の斜視図であ
る。FIG. 5 is a perspective view of a ceramic substrate according to a conventional method.
【図6】従来の方法による積み重ねた状態を示す縦断正
面図である。FIG. 6 is a vertical sectional front view showing a stacked state according to a conventional method.
1,1′ セラミック基板 2 基板片 3 ブレイク溝 3′ 深いブレイク溝 3″ 浅いブレイク溝 1,1 'Ceramic substrate 2 Substrate piece 3 Break groove 3'Deep break groove 3 "Shallow break groove
Claims (2)
イク溝を刻設したセラミック基板の複数枚を、ブレイク
溝を備えた表面が交互に上向きと下向きとになるように
積層状に積み重ね、この積み重ね状態で、高温で焼成す
ることを特徴とするセラミック基板の製造方法。1. A plurality of ceramic substrates each having a break groove formed on one surface in a state of a green sheet are stacked in a laminated manner so that the surfaces having break grooves are alternately turned upward and downward. A method for manufacturing a ceramic substrate, which comprises firing in a stacked state at a high temperature.
ブレイク溝を他方の表面に浅いブレイク溝を各々刻設し
たセラミック基板の複数枚を、深いブレイク溝を備えた
表面が交互に上向きと下向きとになるように積層状に積
み重ね、この積み重ね状態で、高温で焼成することを特
徴とするセラミック基板の製造方法。2. A plurality of ceramic substrates each having a deep break groove formed on one surface and a shallow break groove formed on the other surface in a state of a green sheet, the surfaces having the deep break grooves alternately facing upward and downward. The method for producing a ceramic substrate is characterized in that the ceramic substrates are stacked in such a manner that
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22555495A JPH0971488A (en) | 1995-09-01 | 1995-09-01 | Production of ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22555495A JPH0971488A (en) | 1995-09-01 | 1995-09-01 | Production of ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0971488A true JPH0971488A (en) | 1997-03-18 |
Family
ID=16831119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22555495A Pending JPH0971488A (en) | 1995-09-01 | 1995-09-01 | Production of ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0971488A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120085481A1 (en) * | 2010-10-08 | 2012-04-12 | Tomoaki Abe | Method for manufacturing ceramic multi-layered interconnection substrate |
| JP2013243221A (en) * | 2012-05-18 | 2013-12-05 | Seiko Epson Corp | Electronic component manufacturing method and electronic apparatus |
-
1995
- 1995-09-01 JP JP22555495A patent/JPH0971488A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120085481A1 (en) * | 2010-10-08 | 2012-04-12 | Tomoaki Abe | Method for manufacturing ceramic multi-layered interconnection substrate |
| JP2012084642A (en) * | 2010-10-08 | 2012-04-26 | Stanley Electric Co Ltd | Manufacturing method of ceramic multilayer wiring board |
| US8440035B2 (en) * | 2010-10-08 | 2013-05-14 | Stanley Electric Co., Ltd. | Method for manufacturing ceramic multi-layered interconnection substrate |
| JP2013243221A (en) * | 2012-05-18 | 2013-12-05 | Seiko Epson Corp | Electronic component manufacturing method and electronic apparatus |
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