JPH0973846A - Contact material for vacuum valve and manufacturing method thereof - Google Patents
Contact material for vacuum valve and manufacturing method thereofInfo
- Publication number
- JPH0973846A JPH0973846A JP22820795A JP22820795A JPH0973846A JP H0973846 A JPH0973846 A JP H0973846A JP 22820795 A JP22820795 A JP 22820795A JP 22820795 A JP22820795 A JP 22820795A JP H0973846 A JPH0973846 A JP H0973846A
- Authority
- JP
- Japan
- Prior art keywords
- contact
- contact material
- average particle
- vacuum valve
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、真空バルブ用接点
材料およびその製造方法に関する。TECHNICAL FIELD The present invention relates to a contact material for a vacuum valve and a method for manufacturing the same.
【0002】[0002]
【従来の技術】真空バルブ用接点材料に要求される特性
としては、耐溶着特性・耐電圧・遮断に対し示される基
本三要件と、この他に温度上昇・接触抵抗が低く安定し
ていることが重要な要件となっている。しかしながら、
これらの要件のなかには、相反するものがある関係上、
単一の金属種によって全ての要件を満足させることは不
可能である。このため、実用化されている多くの接点材
料においては、不足する性能を相互に補えるような2種
以上の元素を組合せ、かつ、大電流用または高電圧用等
のように特定の用途に合った接点材料の開発が行われ、
それなりに優れた特性を有するものが開発されている
が、更に強まる高耐圧化・大電流遮断化の要求を十分満
足する真空バルブ用接点材料は未だ得られていないのが
実状である。2. Description of the Related Art As the characteristics required for a contact material for a vacuum valve, there are three basic requirements shown for welding resistance, withstand voltage and interruption, and in addition to this, temperature rise and contact resistance are low and stable. Is an important requirement. However,
Some of these requirements are conflicting, so
It is not possible to meet all requirements with a single metal species. For this reason, in many practically used contact materials, two or more kinds of elements that complement each other in lacking performance are combined and suitable for a specific application such as for large current or high voltage. Development of contact materials
Although materials having excellent properties have been developed as such, vacuum valve contact materials that sufficiently satisfy the requirements for higher breakdown voltage and large current interruption have not yet been obtained.
【0003】例えば、大電流化・耐溶着性を改良した接
点材料として、CuBi接点材料(特公昭41−121
31号)、CuTe接点(特公昭44−23751号)
が知られている。また、大電流化・高耐圧化を指向した
接点としてCuCr接点が知られている(特公昭45−
35101号)。また、CuCr接点の耐溶着性を改良
した接点としてCuCrBi接点が知られている(特公
昭61−41091号)。For example, a CuBi contact material (Japanese Patent Publication No. 41-121) has been used as a contact material having a large current and improved resistance to welding.
31), CuTe contact (Japanese Patent Publication No. 44-23751)
It has been known. A CuCr contact is known as a contact aiming at high current and high breakdown voltage (Japanese Patent Publication No.
35101). Also, a CuCrBi contact is known as a contact with improved welding resistance of the CuCr contact (Japanese Patent Publication No. 61-41091).
【0004】しかしながら、それなりに優れた特性を有
する接点材料が開発されてはいるが、更に強まる高耐圧
化・大電流遮断化の要求を十分満足する接点材料は未だ
得られていないのが実状である。However, although contact materials having excellent characteristics have been developed, no contact material has yet been obtained that sufficiently satisfies the requirements for higher breakdown voltage and higher current interruption. is there.
【0005】[0005]
【発明が解決しようとする課題】上述したように、現用
接点以上に大電流を遮断できる能力を有し、かつ、耐電
圧特性も優れた接点材料を提供しなければならないとい
う問題を有している。As described above, there is a problem that it is necessary to provide a contact material which has the ability to interrupt a large current more than the current contact and has excellent withstand voltage characteristics. There is.
【0006】本発明は、上記に鑑みてなされたもので、
その目的としては、真空バルブの高耐圧化・大電流遮断
化の実現に寄与し得る真空バルブ用接点材料およびその
製造方法を供給することにある。The present invention has been made in view of the above,
An object of the present invention is to provide a contact material for a vacuum valve and a method for manufacturing the same, which can contribute to the realization of a high withstand voltage and a large current interruption of the vacuum valve.
【0007】[0007]
【課題を解決するための手段】電流遮断時には、接点間
にアークが形成され、接点表面はアークにより溶融す
る。CuCr系接点の場合、Cuの融点がCrよりも低
いために、まず、Cuの溶融が始まり、次いで、Cu液
相中にCrが溶解していき、CuCr液相を形成する。
しかしながら、CuCr2元系は、液相にて二相分離領
域を有すること、また、遮断時間すなわちアーク発生時
間は約10ms以下という短時間の間に完了することか
ら、Crの溶融形態が重要になる。すなわち、Cr粒径
が細かければCu液相中に短時間の内に溶解してしまう
が、Cr粒子が大きな場合には全てのCrが完全に溶解
することができずに、局所的にCr粒子が残存し、更
に、Cu液相よりもCr粒子が軽いために浮上し、接点
表面に不均一相を形成してしまう。従って、Cr粒子が
大きな場合にはCu液相へのCrの溶解量が、細かいC
r粒子と比較して少なくなり、CuCr溶液の粘性が低
くなり、容易に、液滴などを発生し易くなり、耐電圧特
性が低下する傾向にある。また、Cr粒子の接点表面へ
の浮上は、局所的なCrリッチ相は接点表面への割れを
発生しやすいものとし、これも耐電圧特性の低下を促
す。When the electric current is cut off, an arc is formed between the contacts and the contact surface is melted by the arc. In the case of a CuCr-based contact, since the melting point of Cu is lower than that of Cr, melting of Cu starts first, and then Cr dissolves in the Cu liquid phase to form a CuCr liquid phase.
However, since the CuCr binary system has a two-phase separation region in the liquid phase, and the breaking time, that is, the arc generation time is completed within a short time of about 10 ms or less, the molten form of Cr becomes important. . That is, if the Cr particle size is small, it will dissolve in the Cu liquid phase within a short time, but if the Cr particle is large, not all of the Cr will be completely dissolved, and the Cr will be locally dissolved. The particles remain, and since the Cr particles are lighter than the Cu liquid phase, they float and form a non-uniform phase on the contact surface. Therefore, when the Cr particles are large, the amount of Cr dissolved in the Cu liquid phase is small.
Compared with r particles, the CuCr solution has a lower viscosity, droplets and the like are easily generated, and withstand voltage characteristics tend to deteriorate. Further, when the Cr particles are floated on the contact surface, the local Cr-rich phase easily causes cracks on the contact surface, which also promotes deterioration of withstand voltage characteristics.
【0008】従って、遮断によるCuCr接点の表面状
態としては、Cu液相中になるべくCrを溶解している
ような状態が好ましく、すなわち、接点母材中に細かい
Cr粒子を多数含んでいた方が良好な遮断性能を有する
傾向にあることが判明した。Therefore, the surface condition of the CuCr contact due to interruption is preferably such that Cr is dissolved in the Cu liquid phase as much as possible, that is, the contact base material contains a large number of fine Cr particles. It has been found that they tend to have good blocking performance.
【0009】一方、真空バルブはバルブ内の高真空を絶
縁体としたスイッチ素子であるのでバルブ内の真空度を
維持できることも、当然重要になる。特に、近年真空バ
ルブの小型化に伴う真空容器の縮小化が進み、その分だ
け、接点が含有する酸素・窒素・水素量を低減させるこ
とが重要になる。前述したようにCr粒子を細かくした
方が遮断性能・耐電圧性能に対しては有効であるが、周
知の通り、細かい粉末は、比表面積の増加による付着ガ
ス量が増加し、遮断性能低下の要因になる。On the other hand, since the vacuum valve is a switch element using a high vacuum inside the valve as an insulator, it is naturally important to maintain the degree of vacuum inside the valve. Particularly, in recent years, as vacuum valves have become smaller, the size of vacuum containers has been reduced, and it is important to reduce the amount of oxygen, nitrogen, and hydrogen contained in the contacts. As described above, it is more effective to make the Cr particles finer for the breaking performance and the withstanding voltage performance. However, as is well known, fine powder causes an increase in the amount of adhering gas due to an increase in the specific surface area, resulting in a decrease in the breaking performance. Becomes a factor.
【0010】以上のCu液相へのCrの溶解量と、接点
のガス含有量の二点からその最良値として微粉末Crと
粗いCr粉末との双方を原料粉末とするのが効果的であ
ることを見出した。From the above two points of the amount of Cr dissolved in the Cu liquid phase and the gas content of the contact point, it is effective to use both fine powder Cr and coarse Cr powder as raw material powders as the best values. I found that.
【0011】そこで、請求項1記載の本発明は、銅と、
平均粒径が30μm以下のクロム粒子と、平均粒径が3
0μmを越えるクロム粒子と、を含有することを要旨と
する。Therefore, according to the present invention of claim 1,
Chrome particles with an average particle size of 30 μm or less, and an average particle size of 3
The gist of the present invention is to contain chromium particles having a diameter of more than 0 μm.
【0012】すなわち、請求項1記載の発明にあって
は、平均粒径の小さいクロム粒子を含ませることで、耐
電圧特性を低下させることなく遮断性能を改善してい
る。That is, according to the first aspect of the present invention, by including the chromium particles having a small average particle diameter, the breaking performance is improved without lowering the withstand voltage characteristics.
【0013】請求項2記載の本発明は、請求項1記載の
発明において、Mo,W,Nb,Taのうち少なくとも
1種類以上を含有することを要旨とする。The present invention according to claim 2 is, in the invention according to claim 1, characterized in that at least one kind of Mo, W, Nb, and Ta is contained.
【0014】請求項2記載の発明にあっては、Mo,
W,Nb,Taを添加することで、CuCr溶液の粘性
を上げて耐電圧特性を改善している。According to the second aspect of the invention, Mo,
By adding W, Nb, and Ta, the viscosity of the CuCr solution is increased and the withstand voltage characteristic is improved.
【0015】請求項3記載の本発明は、請求項1記載の
発明において、Ti,Zr,Yのうち少なくとも1種類
以上を合計含有量が0.5乃至5体積%となるように含
有することを要旨とする。According to a third aspect of the present invention, in the invention according to the first aspect, at least one of Ti, Zr and Y is contained so that the total content is 0.5 to 5% by volume. Is the gist.
【0016】請求項3記載の発明にあっては、Ti,Z
r,Yを所要量添加することで、局所的な銅の低融点を
図り、遮断性能を改善している。According to the invention of claim 3, Ti, Z
By adding the required amounts of r and Y, the low melting point of copper is locally achieved and the barrier performance is improved.
【0017】請求項4記載の本発明は、請求項1記載の
発明において、Bi,Te,Sbのうち少なくとも1種
類以上を合計含有量が0.5乃至3重量%となるように
含有することを要旨とする。According to a fourth aspect of the present invention, in the first aspect of the invention, at least one of Bi, Te and Sb is contained so that the total content is 0.5 to 3% by weight. Is the gist.
【0018】請求項4記載の発明にあっては、Bi,T
e,Sbを所要量添加することで、耐溶着性を一層低減
し、機構部への負担を低減している。In the invention of claim 4, Bi, T
By adding the required amounts of e and Sb, the welding resistance is further reduced and the load on the mechanism is reduced.
【0019】請求項5記載の本発明は、請求項1乃至4
のいずれかに記載の発明において、前記平均粒径が30
μm以下のクロム粒子の含有量が、3乃至30体積%で
あることを要旨とする。The present invention described in claim 5 provides the invention according to claims 1 to 4.
In any one of the inventions described above, the average particle size is 30
The gist is that the content of the chromium particles of μm or less is 3 to 30% by volume.
【0020】請求項5記載の発明にあっては、平均粒径
が30μm以下のクロム粒子の含有量を適量とすること
で、遮断性能の改善を確実なものとしている。According to the fifth aspect of the invention, the content of the chromium particles having an average particle diameter of 30 μm or less is set to an appropriate amount to ensure the improvement of the barrier performance.
【0021】請求項6記載の本発明は、請求項1乃至5
のいずれかに記載の発明において、前記平均粒径が30
μm以下のクロム粒子および前記平均粒径が30μmを
越えるクロム粒子の合計含有量が25乃至65体積%で
あることを要旨とする。The present invention according to claim 6 is the same as claims 1 to 5.
In any one of the inventions described above, the average particle size is 30
The gist is that the total content of the chromium particles having a size of not more than μm and the chromium particles having an average particle size of more than 30 μm is 25 to 65% by volume.
【0022】請求項6記載の発明にあっては、銅に対す
るクロム粒子の含有量を適量とすることで、遮断性能の
改善を確実なものとしている。According to the sixth aspect of the invention, the content of the chromium particles with respect to copper is set to an appropriate amount to ensure the improvement of the barrier performance.
【0023】請求項7記載の本発明は、請求項1乃至6
のいずれかに記載の発明において、接点における酸素と
窒素と水素の含有量の合量が980ppm以下であるこ
とを要旨とする。The present invention according to claim 7 is the same as claims 1 to 6.
In any of the inventions described above, the summary is that the total content of oxygen, nitrogen and hydrogen in the contact is 980 ppm or less.
【0024】請求項7記載の発明にあっては、接点にお
けるガス含有量を所定量以下に抑制することで、遮断性
能の低下を防止している。In the invention according to claim 7, the gas content in the contact is suppressed to a predetermined amount or less to prevent the breaking performance from being deteriorated.
【0025】請求項8記載の本発明は、銅と、平均粒径
が30μm以下および平均粒径が30μmを越えるクロ
ム粒子とを含んだ混合粉末を成形後、非酸化性雰囲気中
において銅の融点以下で焼結することを要旨とする。According to the invention of claim 8, after molding a mixed powder containing copper and chromium particles having an average particle size of 30 μm or less and an average particle size of more than 30 μm, the melting point of copper in a non-oxidizing atmosphere. The main point is to sinter below.
【0026】請求項8記載の発明にあっては、耐電圧特
性を低下させることなく遮断性能を改善した接点材料を
的確に製造することができる。According to the eighth aspect of the present invention, it is possible to accurately manufacture a contact material having an improved breaking performance without lowering the withstand voltage characteristic.
【0027】請求項9記載の本発明は、請求項8記載の
発明において、前記混合粉末が、Mo,W,Nb,Ta
のうち少なくとも1種類以上を含有することを要旨とす
る。According to a ninth aspect of the present invention, in the eighth aspect, the mixed powder is Mo, W, Nb or Ta.
The gist is to contain at least one or more of them.
【0028】請求項9記載の発明にあっては、CuCr
溶液の粘性を上げて耐電圧特性を改善した接点材料を的
確に製造することができる。According to the invention of claim 9, CuCr
It is possible to accurately manufacture a contact material having an improved withstand voltage characteristic by increasing the viscosity of the solution.
【0029】請求項10記載の本発明は、請求項8記載
の発明において、前記混合粉末が、Ti,Zr,Yのう
ち少なくとも1種類以上を合計含有量が0.5乃至5体
積%となるように含有することを要旨とする。According to a tenth aspect of the present invention, in the invention according to the eighth aspect, the total content of the mixed powder is 0.5 to 5% by volume of at least one kind of Ti, Zr and Y. It is a gist to contain such.
【0030】請求項10記載の発明にあっては、局所的
な銅の低融点を図って遮断性能を改善した接点材料を的
確に製造することができる。According to the tenth aspect of the present invention, it is possible to accurately manufacture a contact material having a locally low melting point of copper and improved breaking performance.
【0031】請求項11記載の本発明は、請求項8記載
の発明において、前記混合粉末が、Bi,Te,Sbの
うち少なくとも1種類以上を合計含有量が0.5乃至3
重量%となるように含有することを要旨とする。According to an eleventh aspect of the present invention, in the invention according to the eighth aspect, the mixed powder has a total content of at least one of Bi, Te and Sb of 0.5 to 3 inclusive.
It is a gist to contain it so that it may be a weight%.
【0032】請求項11記載の発明にあっては、耐溶着
性を一層低減して機構部への負担を低減した接点材料を
的確に製造することができる。According to the eleventh aspect of the present invention, it is possible to accurately manufacture a contact material having a further reduced welding resistance and a reduced load on the mechanism portion.
【0033】[0033]
【発明の実施の形態】以下、本発明の実施の形態を具体
的実施態様に基づいて説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below based on specific embodiments.
【0034】まず、本発明の接点材料が適用される真空
バルブの構成を図1および図2を参照して説明する。First, the structure of a vacuum valve to which the contact material of the present invention is applied will be described with reference to FIGS.
【0035】図1は、当該真空バルブの構成を示すもの
で、同図において、1は遮断室を示し、この遮断室1
は、絶縁材料によりほぼ円筒状に形成された絶縁容器2
と、この両端に封止金具3a,3bを介して設けた金属
製の蓋体4a,4bとで真空気密に構成されている。し
かして、上記遮断室1内には、導電棒5,6の対向する
端部に取り付けられた一対の電極7,8が配設され、上
部の電極7を固定電極、下部の電極8を可動電極として
いる。また、この可動電極8の導電棒6には、ベローズ
9が取り付けられ遮断室1内を真空気密に保持しながら
電極8の軸方向の移動を可能にし、このベローズ9の上
部には金属製のアークシールド10が設けられ、ベロー
ズ9がアーク蒸気で覆われることを防止している。11
は、上記電極7,8を覆うようにして遮断室1内に設け
られた金属製のアークシールドで、絶縁容器2がアーク
蒸気で覆われることを防止している。更に、電極8は、
図2に拡大して示すように、導電棒6にロウ付け部12
によって固定されるか、また、かしめによって圧着接続
されている。接点13aは、電極8にロウ付け14で固
着されている。なお、図1における13bは固定側接点
である。FIG. 1 shows the structure of the vacuum valve. In FIG. 1, reference numeral 1 denotes a shut-off chamber.
Is an insulating container 2 formed of an insulating material in a substantially cylindrical shape.
And the metallic lids 4a and 4b provided on both ends thereof with the sealing metal fittings 3a and 3b interposed therebetween to form a vacuum-tight seal. A pair of electrodes 7 and 8 attached to opposite ends of the conductive rods 5 and 6 are arranged in the shutoff chamber 1, and the upper electrode 7 is a fixed electrode and the lower electrode 8 is movable. It is used as an electrode. A bellows 9 is attached to the conductive rod 6 of the movable electrode 8 to enable the electrode 8 to move in the axial direction while keeping the inside of the shutoff chamber 1 vacuum-tight. An arc shield 10 is provided to prevent the bellows 9 from being covered with arc vapor. 11
Is a metal arc shield that is provided in the shutoff chamber 1 so as to cover the electrodes 7 and 8 and prevents the insulating container 2 from being covered with arc vapor. Furthermore, the electrode 8
As shown in the enlarged view of FIG. 2, the brazing portion 12 is attached to the conductive rod 6.
It is fixed by or is crimped by caulking. The contact 13a is fixed to the electrode 8 by brazing 14. In addition, 13b in FIG. 1 is a fixed side contact.
【0036】本発明に係わる接点材料は、上記したよう
な接点13a,13bの双方またはいずれかを一方を構
成するのに適したものである。The contact material according to the present invention is suitable for forming both or one of the contacts 13a and 13b as described above.
【0037】次に、本発明の実施の形態を比較例と対比
させながら詳細に説明するが、それに先立ち、各接点の
評価方法を述べる。Next, the embodiment of the present invention will be described in detail in comparison with a comparative example. Prior to that, an evaluation method of each contact will be described.
【0038】(1)耐電圧特性 各接点合金についてバフ研磨により鏡面仕上げをした平
版電極と針電極にて、両電極間を0.5mm一定とし、
10-4Paのオーダーの真空雰囲気において徐々に電圧
を上昇してスパークを発生した時の電圧値を測定し、こ
れを静耐圧値として求めた。後出の表1に示す測定デー
タは3回の繰り返しテストを行った時の平均値であり、
後述する比較例1に示すCuCr接点の値を1.0とし
た時の相対的な値で示した。(1) Withstand voltage characteristics With respect to each contact alloy, a lithographic electrode and a needle electrode, which are mirror-finished by buffing, have a constant distance between both electrodes of 0.5 mm.
In a vacuum atmosphere of the order of 10 −4 Pa, the voltage value was measured when the voltage was gradually increased and a spark was generated, and this was determined as the static breakdown voltage value. The measurement data shown in Table 1 below is an average value after three repeated tests,
It is shown as a relative value when the value of the CuCr contact shown in Comparative Example 1 described later is 1.0.
【0039】(2)遮断性能 製作した接点材料を、径40mm、厚さ5mmの円板形
状に加工した後、所定の真空バルブに組み込み、印加電
圧7.2KV一定として、遮断電流を8KAから1〜
1.5KAずつ増加させて遮断の可否を判断した。な
お、特性は、比較例1に示すCuCr接点の値を1.0
とした時の相対的な値で示した。(2) Breaking performance After the manufactured contact material was processed into a disk shape having a diameter of 40 mm and a thickness of 5 mm, it was incorporated into a predetermined vacuum valve and the applied voltage was kept constant at 7.2 KV, and the breaking current was changed from 8 KA to 1 ~
Whether or not to block was judged by increasing by 1.5 KA. The characteristic is that the value of the CuCr contact shown in Comparative Example 1 is 1.0
The relative values are shown as
【0040】比較例1 平均粒径100μmのCr粉末と平均粒径が45μmの
Cu粉末を1対1の割合で混合した後、7Ton/cm2
の成形圧力にて圧粉体を成形した後、10-2Paの真空
雰囲気にて、1050℃×1Hr.の焼結条件にて焼結
した。更に、7Ton/cm2 の成形圧力にて再成形した
後、同一条件にて焼結し、接点材料を得た。所定の形状
に加工した後、静耐圧特性と遮断性能の試験を実施し、
この特性値を以下で試作評価した接点の基準値とする。Comparative Example 1 Cr powder having an average particle size of 100 μm and Cu powder having an average particle size of 45 μm were mixed at a ratio of 1: 1 and then 7 Ton / cm 2
After molding the green compact with a molding pressure of 1050 ° C. × 1 Hr. Sintering was carried out under the above sintering conditions. Further, after remolding at a molding pressure of 7 Ton / cm 2 , sintering was performed under the same conditions to obtain a contact material. After processing into a predetermined shape, a static pressure resistance characteristic and a breaking performance test were conducted.
This characteristic value is used as the reference value of the contact evaluated in the following.
【0041】実施例1,2,3、比較例2 比較例1で使用した粉末に加え、平均粒径が4,10,
30,75μmの4種類のCr粉末を用意した。これら
の粉末を15体積%、前述平均粒径が100μmのCr
粉末を35体積%、残部を前述Cu粉末として、十分に
混合した後、比較例1と同様の製造工程にて接点を製作
した(各々、実施例1,2,3、比較例2)。静耐圧特
性と遮断性能を評価したところ、いずれの接点も静耐圧
特性は、比較例1と同等の値を示した。一方、遮断性能
は、4,10,30μmという比較的細かい粒子を添加
したものの方が従来接点よりも良好な特性を示したが、
平均粒径が75μmのCr粒子を添加したものは、比較
例1の接点と同等の性能しか示さなかった。Examples 1, 2, 3 and Comparative Example 2 In addition to the powder used in Comparative Example 1, the average particle size was 4, 10,
Four kinds of Cr powder of 30,75 μm were prepared. 15% by volume of these powders, the above-mentioned average particle diameter of 100 μm of Cr
After sufficiently mixing the powder with 35% by volume and the balance being the Cu powder, contacts were manufactured by the same manufacturing process as in Comparative Example 1 (Examples 1, 2, 3 and Comparative Example 2, respectively). When the static breakdown voltage characteristics and the breaking performance were evaluated, the static breakdown voltage characteristics of all the contacts showed values equivalent to those of Comparative Example 1. On the other hand, as for the breaking performance, the one to which comparatively fine particles of 4, 10 and 30 μm were added showed better characteristics than the conventional contact,
The one to which Cr particles having an average particle diameter of 75 μm was added showed only the same performance as the contact of Comparative Example 1.
【0042】比較例3、実施例4,1,5、比較例4 平均粒径が4μmと100μmの2種類のCr粉末と平
均粒径45μmのCu粉末を使用して、4μmCr粉末
・100μmCr粉末・45μmCu粉末の比を、各
々、40:10:50,30:20:50,15:3
5:50,3:47:50,1:49:50とした5種
類の混合粉末を製作した。その後、1Ton/cm2 の成
形圧力にて圧粉体を成形した後、10-2Paの真空雰囲
気にて、1050℃×1Hr.の焼結条件にて焼結し
た。更に、7Ton/cm2 の成形圧力にて再成形した
後、同一条件にて焼結し、接点材料を得た(各々比較例
3、実施例4,1,5、比較例4)。静耐圧特性を評価
したところ、微細Cr粉末である4μmのCr粒子を4
0体積%添加したものは、ガス含有量も多く、低い耐電
圧特性を示した。しかし、30体積%以下添加した接点
は、比較例1の接点と同等の耐電圧特性を示した。遮断
性能も、ガス含有量の多い比較例3は低い値を示した
が、他は、比較例1の接点よりも良好な特性を示した。Comparative Example 3, Examples 4, 1, 5 and Comparative Example 4 Using two kinds of Cr powders having an average particle size of 4 μm and 100 μm and Cu powder having an average particle size of 45 μm, 4 μm Cr powder, 100 μm Cr powder, The ratio of the 45 μm Cu powder is 40:10:50, 30:20:50, 15: 3, respectively.
Five kinds of mixed powders of 5:50, 3:47:50 and 1:49:50 were manufactured. After that, the green compact was molded at a molding pressure of 1 Ton / cm 2 , and then in a vacuum atmosphere of 10 −2 Pa, 1050 ° C. × 1 Hr. Sintering was carried out under the above sintering conditions. Further, after remolding at a molding pressure of 7 Ton / cm 2 , sintering was performed under the same conditions to obtain contact materials (Comparative Example 3, Examples 4, 1 and 5, Comparative Example 4). When the static pressure resistance characteristics were evaluated, it was confirmed that 4 μm of Cr particles, which were fine Cr powder, were
The one with 0% by volume added had a large gas content and showed a low withstand voltage characteristic. However, the contact added with 30% by volume or less showed withstand voltage characteristics equivalent to the contact of Comparative Example 1. Regarding the breaking performance, the comparative example 3 having a large gas content showed a low value, but the others showed better characteristics than the contact of the comparative example 1.
【0043】比較例5、実施例6,2,7、比較例6 平均粒径が10μmと100μmの2種類のCr粉末と
平均粒径45μmのCu粉末を使用して、10μmCr
粉末・100μmCr粉末・45μmCu粉末の比を、
各々、10:0:90,15:10:75,15:3
5:50,15:50:35,15:75:10とした
5種類の混合粉末を製作した。その後、7Ton/cm2
の成形圧力にて圧粉体を成形した後、10-2Paの真空
雰囲気にて、1050℃×1Hr.の焼結条件にて焼結
した(各々比較例5、実施例6,2,7、比較例6)。
電気特性を評価したところ、全Cr含有量の少ない比較
例5では、耐電圧特性が充分ではなく、全Cr含有量が
90体積%と多い比較例6では、充分な遮断性能を得ら
れなかった。他の、Cr含有量が25〜65体積%の接
点は、耐電圧特性・遮断性能ともに良好な特性を得られ
た。Comparative Example 5, Examples 6, 2, 7 and Comparative Example 6 Using two kinds of Cr powders having an average particle size of 10 μm and 100 μm and Cu powder having an average particle size of 45 μm, 10 μm Cr
The ratio of powder, 100 μm Cr powder, 45 μm Cu powder,
10: 0: 90, 15:10:75, 15: 3, respectively
Five kinds of mixed powders of 5:50, 15:50:35 and 15:75:10 were produced. After that, 7 Ton / cm 2
After molding the green compact with a molding pressure of 1050 ° C. × 1 Hr. The sintering was performed under the sintering conditions of (Comparative Example 5, Examples 6, 2, 7, and Comparative Example 6).
When the electrical characteristics were evaluated, Comparative Example 5 with a low total Cr content did not have sufficient withstand voltage characteristics, and Comparative Example 6 with a high total Cr content of 90% by volume did not provide sufficient breaking performance. . Other contacts having a Cr content of 25 to 65% by volume were able to obtain favorable characteristics in both withstanding voltage characteristics and breaking performance.
【0044】比較例7、実施例8 平均粒径が30μmのCr粉末と、平均粒径が45μm
のCu粉末を混合した後、比較例1と同一工程にて、接
点を製造した(比較例7)。また、平均粒径が100μ
mのCr粉末と45μmのCu粉末を混合した後、ゴム
ラバーに充填し、静水圧成形にてφ50mm×1000
mmの圧粉体を製造した。更に、1000℃×1Hr.
の条件にて真空中で焼結し、焼結体を得た。これを低圧
Ar雰囲気中にて、30V−1500Aの条件にて、消
耗アーク溶解を実施し、Crの平均粒径が30μmの5
0体積%Cr−Cu接点を得た(実施例8)。これらの
接点を電気評価したところ、固相焼結法にて製造した比
較例7はガス含有量も多く、また、耐電圧特性・遮断性
能とも比較例1に劣る値を示した。しかし、実施例8で
は、殆どのCr粒子が30μm以下であるにもかかわら
ず、ガス含有量が小さいために、耐電圧特性・遮断性能
ともに良好な特性を示した。従って、ガス含有量を増大
させない方向で、Cr粒子を細かくする分には、耐電圧
特性・遮断性能ともに良好な方向へ改良されることが判
る。Comparative Example 7 and Example 8 Cr powder having an average particle size of 30 μm and an average particle size of 45 μm
After mixing the Cu powder of Example 1, a contact was manufactured in the same step as Comparative Example 1 (Comparative Example 7). The average particle size is 100μ
m powder and 45 μm Cu powder were mixed, then filled in rubber rubber, and hydrostatically molded to obtain φ50 mm × 1000
mm powder compacts were produced. Furthermore, 1000 ° C. × 1 Hr.
Sintering was carried out in a vacuum under the conditions described above to obtain a sintered body. This was subjected to consumable arc melting under a condition of 30V-1500A in a low-pressure Ar atmosphere, and the average particle diameter of Cr was 5 μm of 30 μm.
A 0 vol% Cr-Cu contact was obtained (Example 8). When these contacts were electrically evaluated, Comparative Example 7 produced by the solid phase sintering method had a large gas content, and also showed inferior values to Comparative Example 1 in withstand voltage characteristics and breaking performance. However, in Example 8, even though most of the Cr particles were 30 μm or less, the gas content was small, so that the withstand voltage characteristics and the breaking performance were good. Therefore, it can be seen that the fineness of the Cr particles in the direction in which the gas content is not increased improves the withstand voltage characteristics and the breaking performance in a favorable direction.
【0045】実施例9,10,11,12,13,14 平均粒径10μmのCr粉末と、平均粒径100μmの
Cr粉末と平均粒径45μmのCu粉末を基本原料とし
て、更に、3μmのW粉末を使用して、50体積%Cr
(内、10μmCr:15体積%)−1W−Cu,40
Cr(内、10μmCr:15体積%)−10W−C
u,25Cr(内、10μmCr:15体積%)−25
W−Cuの3種類の混合粉末を製作した。これらの粉末
を、比較例3と同一工程を経て焼結体を得た後、更に、
7Ton/cm2 の成形圧力にて再成形し、再度、同一条
件にて焼結して接点を得た(各々、実施例9,10,1
1)。また、5μmのMo粉末を用い、40Cr(内、
10μmCr:15体積%)−10Mo−Cu粉末を製
作し、50μmのNb粉末を用い、50Cr(内、10
μmCr:15体積%)−1Nb−Cuの混合粉末を製
作し、更に、7μmのW粉末と40μmのTa粉末を用
い、40Cr(内、10μmCr:15体積%)−5W
−5Ta−Cu粉末を製作した。これら3種類の混合粉
末を使用して、実施例9と同一工程にて接点材料を得た
(各々、実施例12,13,14)。これら6種類の接
点材料につき、同様の電気評価を実施したところ、比較
例1の接点よりも良好な耐電圧特性を示し、更に、遮断
性能も比較例1の接点以上であった。Examples 9, 10, 11, 12, 13, 14 Cr powder having an average particle size of 10 μm, Cr powder having an average particle size of 100 μm and Cu powder having an average particle size of 45 μm were used as basic raw materials, and W having a particle size of 3 μm was further added. 50% by volume Cr using powder
(Including 10 μm Cr: 15% by volume) -1W-Cu, 40
Cr (including 10 μm Cr: 15% by volume) -10W-C
u, 25Cr (including 10 μmCr: 15% by volume) -25
Three types of mixed powders of W-Cu were manufactured. These powders were subjected to the same steps as in Comparative Example 3 to obtain a sintered body, and then,
It was re-molded under a molding pressure of 7 Ton / cm 2 and was again sintered under the same conditions to obtain contacts (respectively Examples 9, 10, 1).
1). Moreover, 40Cr (of which,
10 μm Cr: 15% by volume) -10Mo—Cu powder was produced, and 50 μm Nb powder was used.
(μmCr: 15% by volume) -1Nb-Cu mixed powder was produced, and further, W powder of 7 μm and Ta powder of 40 μm were used, and 40Cr (10 μmCr: 15% by volume) -5W
-5Ta-Cu powder was produced. Using these three types of mixed powders, contact materials were obtained in the same steps as in Example 9 (Examples 12, 13, and 14 respectively). When the same electrical evaluation was carried out on these six types of contact materials, the withstand voltage characteristics were better than those of the contact of Comparative Example 1, and the breaking performance was also higher than that of the contact of Comparative Example 1.
【0046】実施例15,16 平均粒径10μmのCr粉末と、平均粒径100μmの
Cr粉末と平均粒径45μmのCu粉末を基本原料とし
て、更に、100μmのTi粉末・80μmのZr粉末
・100μmのY粉末を使用して、50体積%Cr
(内、10μmCr:15体積%)−0.5Ti−C
u,45Cr(内、10μmCr:15体積%)−2Z
r−3Y−Cuの2種類の混合粉末を製作した。これら
の粉末を、比較例3と同一工程を経て焼結体を得た後、
更に、7Ton/cm2 の成形圧力にて再成形し、再度、
同一条件にて焼結して接点を得た(各々、実施例15,
16)。これらの接点材料につき、同様の電気評価を実
施したところ、耐電圧特性は比較例1の接点並であった
が、比較例1の接点以上の遮断性能を示した。Examples 15 and 16 Cr powder having an average particle size of 10 μm, Cr powder having an average particle size of 100 μm and Cu powder having an average particle size of 45 μm are used as basic raw materials, and further, Ti powder of 100 μm, Zr powder of 80 μm and 100 μm. 50% Cr by volume using Y powder of
(Including 10 μm Cr: 15% by volume) -0.5Ti-C
u, 45Cr (including 10 μmCr: 15% by volume) -2Z
Two kinds of mixed powders of r-3Y-Cu were manufactured. These powders were subjected to the same steps as in Comparative Example 3 to obtain a sintered body,
Furthermore, it is re-molded at a molding pressure of 7 Ton / cm 2 and again
Contact was obtained by sintering under the same conditions (Example 15,
16). When similar electrical evaluations were carried out on these contact materials, the withstand voltage characteristics were similar to those of the contact of Comparative Example 1, but the breaking performance of the contact of Comparative Example 1 or more was shown.
【0047】実施例17,18 平均粒径10μmのCr粉末と、平均粒径100μmの
Cr粉末と平均粒径45μmのCu粉末を基本原料とし
て、更に、150μmのBi粉末・150μmのTe粉
末・150μmのSb粉末を使用して、50体積%Cr
(内、10μmCr:15体積%)−0.5Bi−C
u,45Cr(内、10μmCr:15体積%)−2T
e−1Sb−Cuの2種類の混合粉末を製作した。これ
らの粉末を、比較例3と同一工程を経て焼結体を得た
後、更に、7Ton/cm2 の成形圧力にて再成形し、再
度、同一条件にて焼結して接点を得た(各々、実施例1
7,18)。これらの接点材料につき、同様の電気評価
を実施したところ、耐電圧特性は比較例1の接点並であ
ったが、比較例1の接点以上の遮断性能を示し、更に、
より少さな引き外し力で充分であった。Examples 17 and 18 Cr powder having an average particle size of 10 μm, Cr powder having an average particle size of 100 μm and Cu powder having an average particle size of 45 μm were used as basic raw materials, and further, Bi powder of 150 μm, Te powder of 150 μm, and 150 μm. Sb powder of 50% by volume Cr
(Including 10 μm Cr: 15% by volume) -0.5Bi-C
u, 45Cr (including 10 μmCr: 15% by volume) -2T
Two kinds of mixed powders of e-1Sb-Cu were manufactured. These powders were subjected to the same steps as in Comparative Example 3 to obtain a sintered body, which was then re-molded at a molding pressure of 7 Ton / cm 2 and sintered again under the same conditions to obtain a contact. (Each Example 1
7, 18). When similar electrical evaluations were carried out on these contact materials, the withstand voltage characteristics were similar to those of the contact of Comparative Example 1, but showed a breaking performance higher than that of the contact of Comparative Example 1.
Less tripping force was sufficient.
【0048】以上の結果をまとめたものを表1として示
す。Table 1 shows a summary of the above results.
【0049】[0049]
【表1】 [Table 1]
【0050】以上述べた実施例のみに限らず、本実施例
以外でも、Cr粒径の組合せとガス含有量の抑制によっ
て、遮断性能を向上させることは可能であり、更に、W
等の他の高融点金属を添加することによって、耐電圧特
性も向上させることができるのは明白である。更に、T
i等の活性金属を添加することによって、遮断性能を向
上させ、Bi等の低融点金属を添加することによって、
引き外し力の低減を図れることは明白である。Not only the above-mentioned embodiment but also other than this embodiment, it is possible to improve the breaking performance by combining the Cr particle size and suppressing the gas content.
It is obvious that the withstand voltage characteristic can also be improved by adding another refractory metal such as. Further, T
By adding an active metal such as i, the barrier performance is improved, and by adding a low melting point metal such as Bi,
It is obvious that the tripping force can be reduced.
【0051】[0051]
【発明の効果】以上説明したように、請求項1記載の発
明によれば、平均粒径の少さいクロム粒子を含ませるこ
とで、遮断によるCuCr接点の表面状態としてCu液
相中になるべくクロムが溶解しているようにしたので、
従来のCuCr接点に対して耐電圧特性を低下させるこ
となく遮断性能を改善することができ、もって真空バル
ブの高耐圧化・大電流遮断化の実現に寄与することがで
きる。As described above, according to the first aspect of the present invention, by containing chromium particles having a small average particle diameter, the surface state of the CuCr contact due to interruption is as much as possible in the Cu liquid phase. Since it was made to dissolve,
It is possible to improve the breaking performance without lowering the withstand voltage characteristics of the conventional CuCr contact, which can contribute to the realization of high withstand voltage and large current breaking of the vacuum valve.
【0052】請求項2記載の発明によれば、Mo,W,
Nb,Taを添加するようにしたので、従来のCuCr
接点に比べてCuCr溶液の粘性を上げて耐電圧特性を
改善することができる。According to the second aspect of the invention, Mo, W,
Since Nb and Ta are added, the conventional CuCr
The withstand voltage characteristic can be improved by increasing the viscosity of the CuCr solution as compared with the contact.
【0053】請求項3記載の発明によれば、Ti,Z
r,Yを所要量添加するようにしたので、従来のCuC
r接点よりも局所的な銅の低融点を図り、遮断性能を改
善することができる。According to the invention of claim 3, Ti, Z
Since the required amounts of r and Y were added, the conventional CuC
The lower melting point of copper can be achieved more locally than the r contact, and the breaking performance can be improved.
【0054】請求項4記載の発明によれば、Bi,T
e,Sbを所要量添加するようにしたので、従来のCu
Cr接点よりも耐溶着性を一層低減し、機構部への負担
を低減することができる。According to the invention of claim 4, Bi, T
Since the required amounts of e and Sb were added, the conventional Cu
It is possible to further reduce the welding resistance as compared with the Cr contact point and reduce the load on the mechanism section.
【0055】請求項5記載の発明によれば、平均粒径が
30μm以下のクロム粒子の含有量を適量とするように
したので、従来のCuCr接点に比べて遮断性能を改善
することができる。According to the invention of claim 5, the content of the chromium particles having an average particle diameter of 30 μm or less is set to an appropriate amount, so that the breaking performance can be improved as compared with the conventional CuCr contact.
【0056】請求項6記載の発明によれば、銅に対する
クロム粒子の含有量を適量とするようにしたので、従来
のCuCr接点に比べて遮断性能を改善することができ
る。According to the sixth aspect of the invention, since the content of the chromium particles relative to copper is set to an appropriate amount, the breaking performance can be improved as compared with the conventional CuCr contact.
【0057】請求項7記載の発明によれば、接点におけ
るガス含有量を所定量以下に抑制することで、遮断性能
の低下を防止することができる。According to the invention described in claim 7, by suppressing the gas content in the contact to a predetermined amount or less, it is possible to prevent the breaking performance from being lowered.
【0058】請求項8乃至11に記載の発明によれば、
耐電圧特性および遮断性能を改善した接点材料を的確に
製造することができる。According to the invention described in claims 8 to 11,
It is possible to accurately manufacture a contact material having improved withstand voltage characteristics and breaking performance.
【図1】本発明が適用される真空バルブの断面図であ
る。FIG. 1 is a sectional view of a vacuum valve to which the present invention is applied.
【図2】当該真空バルブにおける接点部の拡大断面図で
ある。FIG. 2 is an enlarged cross-sectional view of a contact portion of the vacuum valve.
1 遮断室 2 絶縁容器 3a,4a 封着金具 4a,5b 蓋体 5,6 導電棒 7 固定電極 8 可動電極 9 ベローズ 10,11 アークシールド 12,14 ロウ付け部 13a 可動側接点 13b 固定側接点 1 Isolation chamber 2 Insulation container 3a, 4a Sealing metal fittings 4a, 5b Lid body 5,6 Conductive rod 7 Fixed electrode 8 Movable electrode 9 Bellows 10, 11 Arc shield 12, 14 Brazing part 13a Movable side contact 13b Fixed side contact
フロントページの続き (72)発明者 山本 敦史 東京都府中市東芝町1番地 株式会社東芝 府中工場内 (72)発明者 草野 貴史 東京都府中市東芝町1番地 株式会社東芝 府中工場内Front page continued (72) Inventor Atsushi Yamamoto No. 1 in Toshiba Fuchu factory, Fuchu, Tokyo (72) Inventor Takashi Kusano No. 1 in Toshiba Fuchu city, Tokyo, Fuchu factory
Claims (11)
粒子と、平均粒径が30μmを越えるクロム粒子と、を
含有することを特徴とする真空バルブ用接点材料。1. A contact material for a vacuum valve, which contains copper, chromium particles having an average particle diameter of 30 μm or less, and chromium particles having an average particle diameter of more than 30 μm.
おいて、Mo,W,Nb,Taのうち少なくとも1種類
以上を含有することを特徴とする真空バルブ用接点材
料。2. The vacuum valve contact material according to claim 1, wherein the vacuum valve contact material contains at least one or more of Mo, W, Nb, and Ta.
おいて、Ti,Zr,Yのうち少なくとも1種類以上を
合計含有量が0.5乃至5体積%となるように含有する
ことを特徴とする真空バルブ用接点材料。3. The vacuum valve contact material according to claim 1, wherein at least one of Ti, Zr, and Y is contained so that the total content is 0.5 to 5% by volume. Contact material for vacuum valves.
おいて、Bi,Te,Sbのうち少なくとも1種類以上
を合計含有量が0.5乃至3重量%となるように含有す
ることを特徴とする真空バルブ用接点材料。4. The vacuum valve contact material according to claim 1, wherein at least one of Bi, Te, and Sb is contained so that the total content is 0.5 to 3% by weight. Contact material for vacuum valves.
子の含有量が、3乃至30体積%であることを特徴とす
る請求項1乃至4のいずれかに記載の真空バルブ用接点
材料。5. The contact material for a vacuum valve according to claim 1, wherein the content of the chromium particles having an average particle diameter of 30 μm or less is 3 to 30% by volume.
子および前記平均粒径が30μmを越えるクロム粒子の
合計含有量が25乃至65体積%であることを特徴とす
る請求項1乃至5のいずれかに記載の真空バルブ用接点
材料。6. The total content of the chromium particles having an average particle diameter of 30 μm or less and the chromium particles having an average particle diameter of more than 30 μm is 25 to 65% by volume. The contact material for a vacuum valve according to Crab.
バルブ用接点材料において、接点における酸素と窒素と
水素の含有量の合量が980ppm以下であることを特
徴とする真空バルブ用接点材料。7. The contact material for a vacuum valve according to claim 1, wherein the total content of oxygen, nitrogen and hydrogen in the contact is 980 ppm or less. material.
均粒径が30μmを越えるクロム粒子とを含んだ混合粉
末を成形後、非酸化性雰囲気中において銅の融点以下で
焼結することを特徴とする真空バルブ用接点材料の製造
方法。8. After molding a mixed powder containing copper and chromium particles having an average particle size of 30 μm or less and an average particle size of more than 30 μm, sintering is performed at a temperature not higher than the melting point of copper in a non-oxidizing atmosphere. A method of manufacturing a characteristic contact material for a vacuum valve.
のうち少なくとも1種類以上を含有することを特徴とす
る請求項8記載の真空バルブ用接点材料の製造方法。9. The mixed powder is Mo, W, Nb, Ta.
9. The method for producing a contact material for a vacuum valve according to claim 8, wherein at least one of the above is contained.
ち少なくとも1種類以上を合計含有量が0.5乃至5体
積%となるように含有することを特徴とする請求項8記
載の真空バルブ用接点材料の製造方法。10. The vacuum according to claim 8, wherein the mixed powder contains at least one kind of Ti, Zr, and Y such that the total content thereof is 0.5 to 5% by volume. Manufacturing method of valve contact material.
うち少なくとも1種類以上を合計含有量が0.5乃至3
重量%となるように含有することを特徴とする請求項8
記載の真空バルブ用接点材料の製造方法。11. The mixed powder has a total content of 0.5 to 3 of at least one of Bi, Te and Sb.
9. The content is 8% by weight.
A method for producing the contact material for a vacuum valve according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22820795A JPH0973846A (en) | 1995-09-05 | 1995-09-05 | Contact material for vacuum valve and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22820795A JPH0973846A (en) | 1995-09-05 | 1995-09-05 | Contact material for vacuum valve and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0973846A true JPH0973846A (en) | 1997-03-18 |
Family
ID=16872877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22820795A Pending JPH0973846A (en) | 1995-09-05 | 1995-09-05 | Contact material for vacuum valve and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0973846A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006236847A (en) * | 2005-02-25 | 2006-09-07 | Toshiba Corp | Contact material and vacuum valve |
| JP6197917B1 (en) * | 2016-06-08 | 2017-09-20 | 株式会社明電舎 | Method for producing electrode material |
-
1995
- 1995-09-05 JP JP22820795A patent/JPH0973846A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006236847A (en) * | 2005-02-25 | 2006-09-07 | Toshiba Corp | Contact material and vacuum valve |
| JP6197917B1 (en) * | 2016-06-08 | 2017-09-20 | 株式会社明電舎 | Method for producing electrode material |
| JP2017218632A (en) * | 2016-06-08 | 2017-12-14 | 株式会社明電舎 | Manufacturing method of electrode material |
| WO2017212731A1 (en) * | 2016-06-08 | 2017-12-14 | 株式会社明電舎 | Method for manufacturing electrode material |
| US10766069B2 (en) | 2016-06-08 | 2020-09-08 | Meidensha Corporation | Method for manufacturing electrode material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5420384A (en) | Contact material for a vacuum interrupter | |
| JP2766441B2 (en) | Contact material for vacuum valve | |
| JP2908071B2 (en) | Contact material for vacuum valve | |
| KR0170052B1 (en) | Vacuum valve contact material and its manufacturing method | |
| JP3597544B2 (en) | Contact material for vacuum valve and manufacturing method thereof | |
| WO2017212731A1 (en) | Method for manufacturing electrode material | |
| JP3441331B2 (en) | Manufacturing method of contact material for vacuum valve | |
| JP4143308B2 (en) | Contact material for vacuum valve, manufacturing method thereof, and vacuum valve | |
| JP2006032036A (en) | Contact material for vacuum valves | |
| JP2003077375A (en) | Contact material for vacuum valve and vacuum valve | |
| JPH1150177A (en) | Contact material for vacuum circuit breaker, manufacturing method thereof and vacuum circuit breaker | |
| JPH1083745A (en) | Contact and electrode materials for vacuum valves | |
| JP2007066753A (en) | Contact material for vacuum valve and manufacturing method thereof | |
| JP4619821B2 (en) | Contact material and vacuum valve | |
| JP6398530B2 (en) | Method for producing electrode material | |
| JP2001222934A (en) | Contact material for vacuum valve | |
| JP2003183749A (en) | Contact material for vacuum circuit breaker and vacuum circuit breaker | |
| JPH09312120A (en) | Contact material for vacuum valve | |
| JPH0347931A (en) | Contact material for vacuum valve | |
| JPH08171830A (en) | Manufacturing method of contact material for vacuum valve | |
| JPH076671A (en) | Contact material for vacuum valve and manufacturing method thereof | |
| JP2653467B2 (en) | Manufacturing method of contact alloy for vacuum valve | |
| JP2006302613A (en) | Contact material for vacuum valve and manufacturing method thereof | |
| JPH1031942A (en) | Contact material for vacuum circuit breaker and manufacturing method thereof | |
| JPH04206122A (en) | Vacuum value |