JPH0976155A - Thick film pattern forming method - Google Patents

Abstract

(57) Abstract: When a photosensitive resin film is used as a mask material in a filling step to form a thick film pattern, the residue of the paste material adhered to the surface of the photosensitive resin film after the filling step, Safe and efficient removal processing while suppressing the effect on the substrate and pattern. SOLUTION: A photosensitive resin film 22 patterned by a photolithography method is provided on a substrate 20, a recess 22a of the photosensitive resin film 22 is filled with a paste material 24, and then adhered to the surface of the photosensitive resin film 22. Paste material 2
After removing the residue 24a of No. 4 by the sandblast method, the photosensitive resin film 22 is peeled off and the entire substrate is baked to fix the paste material 24 on the substrate. The residue 24a does not impose a mechanical load on the photosensitive resin film 22 as a mask material or a pattern, and does not impregnate an organic solvent or the like.
Can be removed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a thick film pattern on a substrate, and in particular, an electrode, an insulator, a resistor, a barrier, etc. in a plasma display panel (hereinafter referred to as PDP). The present invention relates to a thick film pattern forming method preferably used for forming the thick film pattern.

[0002]

2. Description of the Related Art Conventionally, a screen printing method has been mainly used for forming a thick film pattern of electrodes, insulators, resistors, barriers, etc. on a glass substrate in a PDP manufacturing process. This screen printing method has the advantages that there are few restrictions on the paste material that can be used and that it is easy to form a thick film pattern that is difficult to obtain by other printing methods.
Recently, a thick film layer has been formed on a glass substrate,
A patterned mask material is formed on the thick film layer by applying a photolithography technique, and unnecessary portions of the thick film material corresponding to the mask openings are removed by sandblasting to form a desired thick film pattern. Methods have also been proposed. Alternatively, a mask material of a photosensitive resin film patterned by the same photolithography method is formed on the substrate, the paste material is filled in the mask opening, and then the mask material is peeled off to form a desired thick film pattern. The method of doing is also proposed.

However, the PDP currently in progress
Considering the increase in size and high definition, the screen printing method has low dimensional accuracy, and there is a problem in the consistency of each pattern when forming multiple types of thick film patterns. There is a limit.
In addition, although the sandblasting method can improve the manufacturing accuracy, it has a problem that the material is remarkably wasteful in the case of processing a pattern having many unnecessary portions in terms of area. On the other hand, the filling method has attracted attention as a method such as the sandblasting method, which requires less waste of material and can form a thick film pattern with the accuracy of the photolithography method. Further, as an application of this filling method, the present inventors first formed an opening in the thick film layer made of the first paste material by a sandblasting method, and then used the mask material in the sandblasting step as it was. A method of filling the opening with a second paste material and forming two different types of thick film patterns by self-alignment by using it as a mask material in the filling step (Japanese Patent Application No. 7-2317).
47).

[0004]

However, when the thick film pattern is formed by the above-mentioned filling method, the paste material left unfilled during the filling adheres on the filling mask material and becomes a residue, which penetrates the stripping solution. To make it difficult to peel off the mask material after the filling step, or when the paste material remains across the concave and non-concave portions of the mask material, part of the paste material filled in the concave portions There is a problem in that the mask material may be removed when it is peeled off. Furthermore, the photosensitive resin film is peeled off by immersing it in an alkaline aqueous solution or an organic solvent. However, there is a problem in that the residue dispersed in the solution adheres to the substrate surface or the pattern surface again and cannot be removed.

Further, the PDP generally has a structure in which thick film patterns having a film thickness of several μm to several tens of μm are laminated, but when the filling process is carried out by laminating it on the already formed lower structure. The irregularities and steps of the lower structure are reflected in the surface shape of the photosensitive resin film serving as a filling mask, and the filling causes the paste to be embedded in the minute recesses or stepped portions on the surface of the photosensitive resin film. Usually, a mechanical polishing method is used to remove the residue adhering to the mask material, but in order to remove the residue of the surface recessed portion as described above, the photosensitive resin film is applied over almost the entire surface of the panel substrate. There is a problem that uniform cutting of several μm or more is required in the film thickness direction, and even if such cutting is performed, it is not possible to deal with the residue in the step portion. Furthermore, it is difficult to increase the size of a highly accurate polishing device so that a large area such as a diagonal of 40 to 60 inches can be uniformly processed in a batch. In addition, considering the influence of mechanical load during the polishing process on the fine structures formed under the photosensitive resin film, it is even more difficult to introduce such a method into PDP mass production equipment. Not realistic.

On the other hand, as another method of removing the residue attached on the mask material, there is a method of wiping the surface of the mask material with a cloth or sponge impregnated with an organic solvent. Although it is possible to remove the residue in the step portion and the step portion, there is a problem in that the organic solvent may chemically interfere with the photosensitive resin film or the filled paste material to induce pattern damage. There is a drawback that productivity is inferior because of the cost.

The present invention has been made in view of the above problems, and an object thereof is to remove the residue of the paste material attached to the surface of the photosensitive resin film after the filling step,
It is an object of the present invention to provide a thick film pattern forming method suitably used for safely and efficiently removing the substrate while suppressing the influence on the substrate and the pattern, and for accurately producing a large-sized and high-definition PDP substrate.

[0008]

In order to achieve the above object, the method for forming a thick film pattern according to the present invention is characterized in that a thick film pattern is formed on a substrate by a method including at least the following steps. There is. (1) A step of providing a photosensitive resin film patterned by a photolithography method on a substrate. (2) A step of filling the concave portion of the photosensitive resin film with a paste material and drying. (3) A step of removing the paste residue attached to the surface of the photosensitive resin film by a sandblast method. (4) A step of peeling off the photosensitive resin film. (5) A step of baking the entire substrate to fix the paste material on the substrate.

Another thick film pattern forming method according to the present invention is characterized by forming a thick film pattern on a substrate by a method including at least the following steps. (1) A step of forming a thick film layer by applying a first paste material on a substrate and drying it. (2) A step of providing a photosensitive resin film patterned by a photolithography method on the thick film layer. (3) A step of performing a sandblasting process using the photosensitive resin film as a sandblasting-resistant mask material to form a recess in the thick film layer. (4) A step of filling the concave portion of the thick film layer with a second paste material and drying. (5) A step of removing the paste residue attached to the surface of the photosensitive resin film by a sandblast method. (6) A step of peeling off the photosensitive resin film. (7) A step of baking the entire substrate to fix the first and second paste materials on the substrate.

In the former thick film pattern forming method having the above structure, the paste material is filled in the concave portion of the mask material having the accuracy of the photolithography method. After that, the residue of the paste material attached to the surface of the mask material is removed by a sandblast method, the mask material is peeled off, and the paste material is fixed to the substrate by firing. Therefore, for example, when another thick film pattern is formed on a substrate on which a thick film pattern is already formed, this thick film pattern forming method can be used without applying a mechanical load to the mask material or the filled pattern. Moreover, the residue on the surface of the mask material can be satisfactorily removed without impregnating with an organic solvent or the like. Furthermore, even if the residue is embedded in the fine irregularities on the surface of the mask material reflecting the thick film pattern already formed on the lower side of the mask material, the residue can be similarly removed.

In the latter thick film pattern forming method,
A recess is formed in the first paste material through a mask material having the accuracy of the photolithography method, and the second paste material is filled in the recess using the same mask material as it is. Then, the residue of the second paste material attached to the surface of the mask material is removed by a sandblast method, the mask material is peeled off, and the first and second paste materials are fixed to the substrate by firing. Therefore, even if the residue of the second paste material adheres to the step portion of the mask material generated in the peripheral portion of the area where the first paste material is applied, as in the former thick film pattern forming method. Can be removed well.

[0012]

1 (a) and 1 (b) show an example of the structure of a DC type PDP which is suitable for utilizing the above-mentioned thick film pattern forming method in a manufacturing process.

As shown in these figures, this DC type PDP is formed by combining two glass substrates, a front plate 1 and a rear plate 2, into a panel, and a cathode 3 is formed on the front plate 1. A first electrode group is formed, and a second electrode group consisting of an electrically connected electrode body 4 and a display anode 5 is formed on the back plate 2, and the cathode 3 and the display anode 5 are substantially orthogonal to each other. Thus, the front plate 1 and the rear plate 2 are held opposite to each other by the barrier 6 to form a discharge cell 7, and the cathode 3 and the electrode body 4 in the discharge cell 6 form a unit discharge electrode pair. An auxiliary anode 8 is provided in parallel between the adjacent display anodes 5, and an electrode body 9 is also provided on the auxiliary anode 8 at a position intersecting with the cathode 3.

In the above PDP, when a predetermined voltage is applied between the cathode 3 and the display anode 5, the display anode 5 moves to the electrode body 4.
Current flows into the discharge cell 7 and the cathode 3 and the electrode body 4
A discharge is generated between the two, and the ultraviolet rays generated by this discharge cause the phosphors 10 of RGB three colors to emit light, and this light emission is radiated to the outside through the front plate 1 to display a full-color image. In this case, the auxiliary anode 8 has a role of supplying charged particles serving as a pilot fire for discharge into the discharge cell 7 through the priming slit 11. Note that 12
Is an insulator layer that serves as a white background layer to make color display clear.

An embodiment of the thick film pattern forming method of the present invention will be described below by taking the steps of manufacturing the DC type PDP having the above structure as an example.

(First Embodiment) In this embodiment, a step of forming a cathode on a glass substrate forming a front plate will be described. The cathode formed here is a portion related to display as shown in FIG. 1 (a). The lower layer electrode and the upper layer electrode that covers the lower layer electrode. In this way, the cathode is formed by laminating two kinds of metals, by coating the lower layer electrode having excellent conductivity but poor sputtering resistance with the upper layer electrode having poor conductivity but excellent sputtering resistance, This is for producing a cathode having low resistance and long life.

First, a lower layer electrode is formed on a glass substrate. As the lower layer electrode, a low resistance conductive material such as Au, Ag and Ni is used, and Au and Ag are preferably used among them. Here, Ag was used.

The glass substrate used was previously cleaned and annealed. Then, a thick film of Ag paste is printed by screen printing on the entire surface of the glass substrate that has been subjected to such pretreatment, and the Ag paste is printed in a clean oven for 150
After drying at ˜170 ° C. for 15 to 30 minutes, firing was performed at a peak temperature of 550 ° C. and a holding time of about 8 minutes. The film thickness after firing was about 4 μm.

Next, a liquid positive photosensitive resin was applied on the Ag thick film and dried in a clean oven at 70 to 90 ° C. for about 30 minutes. As a coating method, any method such as spin coating, reverse coating, spraying or dipping may be used as long as it is a method for coating a liquid material. Further, the photosensitive resin does not have to be liquid, and a film resist can be used. When a film resist is used, it may be directly attached on the Ag thick film using a laminator.

After that, the photosensitive resin film was exposed through a light-shielding mask having a pattern of a lower electrode (width of 80 μm). When a liquid positive resist was used, the exposure amount was about 170 mJ / cm ² with an ultraviolet ray having a wavelength of 405 nm. After the exposure, the exposed organic material is developed with a dedicated organic alkaline developing solution to remove the exposed portion, and then post-baked in a clean oven at 100 to 150 ° C. for about 30 minutes to form a patterned photosensitive resin film. And the adhesion with the Ag thick film was strengthened.

Subsequently, the Ag thick film was chemically etched using the patterned photosensitive resin film as a mask to form a lower electrode of the cathode. The etchant used is ferric nitrate 3
A 3 wt% aqueous solution was used. After this etching treatment was completed, the photosensitive resin film was washed with water, the photosensitive resin film was removed, further washed with water, and then dried. Acetone was used to remove the photosensitive resin film so that the photosensitive resin film was dissolved.

The step of forming the upper layer electrode so as to cover the display-related portion of the lower layer electrode (Ag cathode bus) thus formed will be described below with reference to FIG. As the upper layer electrode, a conductive material having relatively high sputtering resistance such as Al, Cr, Ta, and W is used. Here, Al was used.

First, as shown in FIG. 2A, on the glass substrate 20 on which the pattern of the lower layer electrode 21 is already formed,
A negative type film-shaped photosensitive resin film 22 having a film thickness of the photoconductor of 25 μm was attached by a laminator at a roll temperature of about 120 ° C. The photosensitive resin film 22 used may be liquid, or may be a positive resist.

Then, as shown in FIG. 2 (b), a width of 100 μm is formed so as to overlap the display-related portion of the lower layer electrode 21.
The photosensitive resin film 22 was exposed by using the light-shielding mask 23 having the thin line pattern. In this case, the exposure dose is 4 wavelengths.
It was about 60 mJ / cm ² with 05 nm ultraviolet light. After exposure, prebaking at 70 to 90 ° C. for about 10 minutes in a clean oven gave better resolution. Then, development is performed with a 1 wt% aqueous solution of sodium carbonate,
As shown in FIG. 2C, after forming the concave portion 22a in the photosensitive resin film 22 on the lower electrode 21, post baking is performed at 120 to 170 ° C. to accelerate the curing of the photosensitive resin film 22,
Further, the close contact with the substrate 20 was strengthened. This post-baking process is performed by filling the concave portion 22a of the photosensitive resin film 22 in the subsequent filling step.
It is preferable to do so in order to prevent the photosensitive resin film 22 from being easily attacked by the solvent component contained in the paste material to be filled in. The width (100 μm) of the concave portion 22a of the photosensitive resin film 22 is made wider than the width (80 μm) of the lower layer electrode 21 so that the lower layer electrode 21 is completely covered with the upper layer electrode to isolate it from the discharge space. This is because it is preferable to prevent deterioration of the lower electrode 21 due to sputtering.

Thereafter, as shown in FIG. 2 (d), Al paste (paste material 24) is filled in the concave portion 22a of the photosensitive resin film 22 using a polycarbonate squeegee, and heated in a clean oven at 150-150 ° C. 15 ~ at 170 ℃
Dry for 30 minutes. The filling of the paste material 24 was performed by first placing the paste material 24 on one end of the substrate and scanning the squeegee to scrape the paste material 24 into the recess 22a. A rubber squeegee, a spatula made of resin, a metal blade, or a doctor may be used for filling. Further, the filling does not have to be completed in one procedure, and may be repeated several times. This is paste material 24
This is because the volume shrinkage occurs with the drying. Here, the procedure of filling and drying was repeated twice.

When the substrate is viewed two-dimensionally at the end of this filling step, as shown in FIG. 3A, the entire surface of the glass substrate 20 is covered with the lower electrode 21, and the photosensitive resin film 2 is covered.
2 is formed and the concave portion 22a of the photosensitive resin film 22 is filled with the paste material 24.
As shown in FIG. 3B as an AA cross section of (a), the residue 24a of the Al paste remains attached to the area other than the concave portion 22a on the surface of the photosensitive resin film 22 as illustrated. In particular, as a BB cross section of FIG.
As shown in (c), a residue 24a remained on the surface of the photosensitive resin film 22 where the lower layer electrode 21 is located so as to be embedded between the adjacent lower layer electrodes 22. This is because the lower layer electrode 21 has a thickness, so that the surface shape of the photosensitive resin film 22 reflects the unevenness, and the paste material 24 is embedded in the fine recesses on the surface. In this case, the height of the irregularities originating from the lower layer electrode 21 was about 2 μm.

In this way, the residue 24a of the paste material 24
Adheres to the stripper, it hinders the penetration of the stripping solution and makes stripping difficult after the filling step, or, as shown in FIG. 4, a part of the paste material 24 filled in the recess is missing during the stripping step. It is not preferable. Further, if the removal of the residue 24a is incomplete, as shown in FIG. 5, the residue 24a that has once fallen off from the photosensitive resin film 22 in the stripping solution and is separated into the solution is the glass substrate 20 or the paste material 24 again. There is a risk that it will adhere to the pattern surface and cannot be removed.

Therefore, as shown in FIG. 2 (e), sandblasting is performed to remove the residue 24 on the surface of the photosensitive resin film 22.
a was removed. Brown fused alumina # 10 for polishing powder
No. 00, the injection pressure is 1.5 kgf / cm ² , the distance between the nozzle and the substrate is 190 mm, and the scanning speed is 4800 mm /
Sandblasting was performed under each condition of minutes. This is a grinding condition that is considerably weaker than in the case of normal sandblasting in which a thick film layer is ground and patterned, so the amount of the Al paste surface filled as the upper layer electrode is reduced by the film thickness. The residue 24a on the surface of the photosensitive resin film 22 including the residue 24a embedded in the minute recesses on the surface of the photosensitive resin film 22 originating from the lower electrode 21 was almost completely removed, which was about 1 μm. .

As the grinding powder, glass beads # 8 were used.
In the case of using 00, since the particle size is larger than # 1000 and the particles are spherical, the ability to grind and remove minute residues is poor, while the filled paste is large in momentum of particles. There was an inconvenience that unevenness marks like powder were left on the surface layer of the material. Therefore, it can be said that powder having a fine particle size and a sharp microstructure on the particle surface, such as brown fused alumina # 1000, is preferable for removing the residue.

After the surface of the photosensitive resin film 22 was sufficiently cleaned in this way, the photosensitive resin film 22 was peeled from the substrate with 10 vol% ammonia water. In addition, an alkaline aqueous solution of sodium hydroxide, potassium hydroxide, 2-aminoethanol or the like may be used as the stripping solution for the film-shaped photosensitive resin film. The residue of the Al paste does not redeposit on the surface of the substrate after peeling, and a good cathode pattern composed of the lower layer electrode 21 and the upper layer electrode 25 covering this is formed as shown in FIG. It was After this, peak temperature 5
Firing was performed at 50 ° C. for a holding time of about 8 minutes to fix the Al paste to the substrate to complete the front plate.

(Second Embodiment) In the present embodiment, a display anode and an auxiliary anode are formed on a glass substrate forming a back plate, and thereafter, an electrode body connected to them and an opening for projecting the electrode body are provided. However, the step of forming an insulator layer that covers the two types of anodes will be described.

First, a conductive paste material was applied by screen printing on the entire surface of a glass substrate that had been cleaned and annealed as in the first embodiment. As the conductive material for the anode, low resistance conductive materials such as Au, Ag and Ni are used. Among them, Au and Ag are preferable, and Au is used here. After coating, the coating was dried in a clean oven at 150 to 170 ° C. for 15 to 30 minutes, and then baked at a peak temperature of 580 ° C. and a holding time of about 8 minutes to form an Au thick film having a thickness of about 2 μm.

Next, a liquid positive photosensitive resin was applied on the Au thick film and dried in a clean oven at 70 to 90 ° C. for about 30 minutes. As a coating method, any method such as spin coating, reverse coating, spraying or dipping may be used as long as it is a method for coating a liquid material. Further, the photosensitive resin does not have to be liquid, and a film resist can be used. When a film resist is used, it may be directly attached on the Au thick film using a laminator.

Then, the photosensitive resin film was exposed through a light-shielding mask having a pattern of a display anode (width 180 μm) and an auxiliary anode (width 120 μm). When a liquid positive resist is used, the exposure dose is 3 with ultraviolet light of 405 nm wavelength.
It was 40 mJ / cm ² . After the exposure, the exposed portion is removed by developing with a dedicated organic alkaline developing solution, and then post-baked in a clean oven at 100 to 150 ° C. for about 30 minutes to form a patterned photosensitive resin film. And the adhesion with the Au thick film was strengthened.

Subsequently, the Au thick film was chemically etched using the patterned photosensitive resin film as a mask to form a display anode and an auxiliary anode. As the etching liquid, iodine, potassium iodide, and water prepared in a weight ratio of 1: 2: 5 were used. After completion of this etching treatment, the photosensitive resin film was dissolved and removed by washing with water and then ultrasonic cleaning in acetone. The ultrasonic cleaner is used for the inorganic binder (low melting point glass component) of the paste that still remains in the portion where Au has been removed by etching.
This is to remove sufficiently. Then, it was further washed with water and then dried.

The steps after forming the display anode and the auxiliary anode on the glass substrate in this manner will be described below with reference to FIGS. 6 and 7.

First, as shown in FIG. 6 (a), a pattern that covers the entire area of the display anode 31 and the auxiliary anode 32 relating to display and exposes the lead-out terminal portion formed on the peripheral portion of the glass substrate 30. The glass paste (first paste material) to be the insulator layer was applied by the screen printing method using the screen printing plate. After coating, dry in a clean oven at 150-170 ℃ for about 30 minutes,
A thick film layer 33 made of glass paste having a film thickness of 45 μm was formed.

Next, a film-shaped negative photosensitive resin having a thickness of 25 μm and having sandblast resistance is laminated on the entire surface of the glass substrate 30 at a roll temperature of about 120 ° C.,
As shown in FIG. 6B, a photosensitive resin film 34 was formed on the thick film layer 33. Then, as shown in FIG. 6C, exposure was performed through a portion where the glass paste was to be removed, that is, a light-shielding mask 35 provided with an electrode body pattern to be formed on the back plate. Here, an electrode body pattern having a diameter of 100 μm was adopted. The exposure dose is about 3 with UV light of 405 nm wavelength.
It was 0 mJ / cm ² . After the exposure, 5 to 70 ~ 90 ℃
After prebaking for 15 minutes, 1w sodium carbonate
Development was performed with a t% aqueous solution to obtain a patterned photosensitive resin film 34 as shown in FIG. 6 (d). Although a film-shaped resist which is easy to handle is used in the present embodiment, the photosensitive resin film 34 is formed of a liquid resist using a blade coating method, a roll coating method, a reverse coating method, a spray coating method, a dipping method, or a screen printing method. It may be formed by coating by a method or the like. Further, not only the negative type but also a positive type resist may be used.

Then, after post-baking at 120 to 170 ° C. for 15 to 30 minutes, as shown in FIG.
Sandblasting was performed using the patterned photosensitive resin film 34 as a mask material for sandblasting resistance. in this case,
Brown fused alumina # 1000 was used as the abrasive, the distance between the nozzle and the substrate was 120 mm, and the injection pressure was 3 kg /
Sandblasting was performed at cm ² and a scan speed of 4800 mm / min. As a result, as shown in FIG. 7B, the glass paste not covered with the photosensitive resin film 34 was ground, and the recess 33 a could be formed in the thick film layer 33.

Then, after cleaning for removing powder, a conductive paste material (second paste material) to be an electrode body is placed on one end of the substrate, and a polycarbonate squeegee is scanned. As shown in FIG. 7 (c), the conductive paste material 36 was filled in the recess 33a. Here, Au paste is used as the material of the conductive paste, and after filling, in a clean oven at 150 to 170 ° C.
And dried for 15-30 minutes. As the material of the conductive paste, in addition to Au, Ag, Al, Ni, Cu, Ru
A thick film printing paste such as O ₂ can be used.
In addition, a metal doctor blade, a ceramic spatula, a resin or rubber spatula, a squeegee, or the like may be used for filling the Au paste. Moreover, the filling of the Au paste does not have to be completed in one procedure, and may be repeated several times. This is because volume contraction occurs as the Au paste is dried. Here, in order to sufficiently fill the upper portion of the recess 33a with the Au paste to make the height and shape of the electrode body uniform in the substrate, filling and drying were repeated three times. Repeating the filling a plurality of times was convenient because the height of the electrode body was made uniform in the substrate and the gap between the discharge electrode pairs became constant.

When the substrate is viewed in plan when the filling step is completed, a display anode 31 and an auxiliary anode 32 are formed on the glass substrate 30 as shown in FIG. 8A, and the display region is covered. Further, the thick film layer 33 of the insulating layer is formed so as to expose the lead terminal portion formed on the peripheral portion of the glass substrate 30, and the photosensitive resin film 34 is further formed on the thick film layer 33. Thick film layer 33 formed
The paste material 36 of the electrode body is filled in the concave portion 33a of the above. However, as shown in FIG. 7C, in the area other than the concave portion 33a on the surface of the photosensitive resin film 34,
The Au paste residue 36a remained attached. In particular, on the surface of the photosensitive resin in the portion where the lead terminals are formed on the peripheral portion of the substrate, as in the case described with reference to FIG. 3C,
The residue remained so that it was embedded between adjacent anodes. This is because the surface shape of the photosensitive resin film reflects the unevenness because each anode has a thickness, and the paste material is embedded in the fine recesses on the surface. Further, as shown in FIG. 8 (b), the residue was remarkable at the edge of the thick film layer 33 of the glass paste. This is because a step having a height corresponding to the film thickness of the thick film layer 33 of the glass paste is formed in this portion.

Thus, the Au conductive paste material 36
If the residue 36a is adhered to the step portion, the peripheral region of the glass substrate 30 in which the photosensitive resin film 34 is directly adhered to the glass in the step of dipping the photosensitive resin film 34 by immersing it in a later alkaline aqueous solution. In the area close to the thick film layer 33 of the glass paste and the peeling speed is different in the latter, as shown in FIG. 9, the photosensitive resin film 34 is broken at the boundary between the two. In this way, the residue 36a is peeled off, and the residue 36a on the step portion adheres to the surface of the glass substrate 30. In particular, at the stepped portion that crosses the lead terminal portion, if the conductive paste adheres in this way, the electrodes will be short-circuited, which is extremely inconvenient.

Therefore, after the filling step, as shown in FIG. 7 (d), a sandblasting process is performed to perform the photosensitive resin film 34.
The surface residue 36a was removed. Brown fused alumina # 1000 was used as the polishing powder, and the injection pressure was 1.5 kgf / cm.
^2. Sandblasting was performed under the conditions that the distance between the nozzle and the substrate was 170 mm and the scanning speed was 4800 mm / min. Since this is a grinding condition that is considerably weaker than in the case of normal sandblasting, in which a thick film layer is ground and patterned, the amount of the Au paste surface filled as an electrode body, which is reduced by grinding, is expressed by the film thickness. Remaining at about 2 μm, almost all the residue on the surface of the photosensitive resin film including the residue embedded in the minute recesses on the surface of the photosensitive resin film derived from the lead-out terminal on the peripheral edge of the glass substrate and the residue on the above-mentioned stepped portion. It could be completely removed. Especially, when such a step exists, it is difficult to remove the residue attached to the step portion by a mechanical polishing method. Further, since the sandblasting device used for the grinding process of the thick film layer 33 of the glass paste, the barrier rib to be formed later, and the fluorescent surface can be used as it is, it is not necessary to newly install an independent large-scale precision polishing device, and the equipment is not required. It is convenient.

After the surface of the photosensitive resin film 34 was sufficiently cleaned in this manner, the photosensitive resin film 34 was peeled from the substrate with 10 vol% ammonia water. In addition, an alkaline aqueous solution of sodium hydroxide, potassium hydroxide, 2-aminoethanol or the like may be used as the stripping solution for the film-shaped photosensitive resin film. The residue of the Au paste did not redeposit on the surface of the substrate after peeling, and a good pattern of the insulator layer 33 and the electrode body 37 was formed as shown in FIG. 7 (e). After this, the substrate is subjected to a peak temperature of 540 ° C. and a holding time of about 1
Firing was performed for 0 minutes to fix the glass paste and the Au paste to the substrate.

The following steps are the same as those in the prior art, and therefore will be briefly described. However, the barriers defining the discharge cells are formed by a screen printing method or a sandblast method, and the discharge cells are filled with a phosphor by a screen printing method. After that, a phosphor screen having a shape exposing the electrode body was formed by a sandblast method. Furthermore, by combining this rear plate and the front plate formed by the method described in the first embodiment, the gas (Ne-X
e or He-Xe), and the target PDP
Was produced.

In each of the above embodiments, the DC type PD
Although only the example in which the present invention is applied to the thick film pattern formation of P is shown, the thick film pattern forming method of the present invention is not limited to this, and can of course be applied to the thick film pattern formation of AC type PDP. Further, at present, a thick film hybrid IC, which is manufactured by alternately printing a conductive paste and an insulating paste on a substrate such as a ceramic or printing a resistor paste, and then repeating drying and firing, It can also be applied to pattern formation of modules and the like. In particular, it is effective to apply the method of forming the protruding electrode body as shown in the second embodiment to the formation of the structure in which the via hole is formed in the insulator layer to connect the upper and lower layers. If a fine residue of the conductive paste adheres to and remains in the element thus manufactured, it may cause a short circuit, and the reliability of the element may be significantly impaired. Therefore, according to the present invention, it is possible to provide a highly reliable integrated circuit or the like which is miniaturized and has high definition.

[0047]

As described above, according to the present invention, the paste material is filled in the concave portion of the photosensitive resin film patterned by the photolithography method, and then the photosensitive resin film is peeled off and then baked. When forming the film pattern, the paste residue that has adhered to the surface of the photosensitive resin film after filling the paste material is removed by the sandblasting method, so the paste residue is safe while suppressing the effect on the substrate and the filled pattern. Therefore, the thick film pattern having a good shape can be formed without damaging the pattern in the step of peeling the photosensitive resin film.

When the method for forming a thick film pattern according to the present invention is used, the step of forming an electrode on a substrate or simultaneously forming two kinds of thick film patterns such as an electrode and an insulating layer is performed by using a paste residue. High yield can be achieved with high productivity without contaminating the substrate or other thick film patterns.
It is possible to obtain a PDP that can be easily mass-produced while maintaining sufficient dimensional accuracy even if the panel becomes large and fine.

[Brief description of drawings]

1A and 1B show an example of the configuration of a DC type plasma display panel that is preferably manufactured by using the thick film pattern forming method of the present invention, in which FIG. 1A is a sectional view and FIG. FIG.

FIG. 2 is a process chart showing a procedure of forming an upper layer electrode after forming a lower layer electrode of a cathode having a two-layer structure on a glass substrate serving as a front plate in advance.

FIG. 3 shows the substrate after the filling step,
Is a plan view, (b) is an A-A sectional view of (a), and (c) is a BB sectional view of (a).

FIG. 4 is an explanatory diagram showing a state in which a part of the paste material is missing during the process of peeling the photosensitive resin film.

FIG. 5 is an explanatory diagram showing a state in which a paste residue adheres to a glass substrate or a panel surface during a process of peeling a photosensitive resin film.

FIG. 6 is a first half process chart showing a procedure of forming an insulating layer and an electrode body after forming a display anode and an auxiliary anode on a glass substrate to be a back plate.

FIG. 7 is a process diagram of the latter half following FIG. 6;

FIG. 8 shows the substrate after the filling step, (a)
Is a plan view, and (b) is a sectional view taken along line AA of (a).

FIG. 9 is an explanatory diagram for explaining that the photosensitive resin film peeling process cannot be successfully performed when there is a residue of the conductive paste material.

[Explanation of symbols]

 20 Glass Substrate 21 Lower Electrode 22 Photosensitive Resin Film 22a Recess 23 Light-shielding Mask 24 Paste Material 24a Residue 25 Upper Layer Electrode 30 Glass Substrate 31 Display Anode 32 Auxiliary Anode 33 Thick Film Layer 34 Photosensitive Resin Film 35 Mask 36 Conductive Paste (first 2 paste material) 37 electrode body

Claims (2)

[Claims] 1. A method for forming a thick film pattern on a substrate, comprising at least the following steps. (1) A step of providing a photosensitive resin film patterned by a photolithography method on a substrate. (2) A step of filling the concave portion of the photosensitive resin film with a paste material and drying. (3) A step of removing the paste residue attached to the surface of the photosensitive resin film by a sandblast method. (4) A step of peeling off the photosensitive resin film. (5) A step of baking the entire substrate to fix the paste material on the substrate. 2. A method for forming a thick film pattern on a substrate, comprising at least the following steps. (1) A step of forming a thick film layer by applying a first paste material on a substrate and drying it. (2) A step of providing a photosensitive resin film patterned by a photolithography method on the thick film layer. (3) A step of performing a sandblasting process using the photosensitive resin film as a sandblasting-resistant mask material to form a recess in the thick film layer. (4) A step of filling the concave portion of the thick film layer with a second paste material and drying. (5) A step of removing the paste residue attached to the surface of the photosensitive resin film by a sandblast method. (6) A step of peeling off the photosensitive resin film. (7) A step of baking the entire substrate to fix the first and second paste materials on the substrate.