JPH097799A - Vacuum vessel for electron accumulating ring - Google Patents
Vacuum vessel for electron accumulating ringInfo
- Publication number
- JPH097799A JPH097799A JP14717195A JP14717195A JPH097799A JP H097799 A JPH097799 A JP H097799A JP 14717195 A JP14717195 A JP 14717195A JP 14717195 A JP14717195 A JP 14717195A JP H097799 A JPH097799 A JP H097799A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum chamber
- vacuum vessel
- beam damper
- vacuum
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000002245 particle Substances 0.000 claims abstract description 20
- 230000005672 electromagnetic field Effects 0.000 claims abstract description 8
- 238000003860 storage Methods 0.000 claims description 17
- 230000005469 synchrotron radiation Effects 0.000 claims description 6
- 238000005513 bias potential Methods 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 9
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- 238000005192 partition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 108010083687 Ion Pumps Proteins 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Particle Accelerators (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は荷電粒子装置、特に電子
蓄積リングに用いられる真空容器に関する。FIELD OF THE INVENTION The present invention relates to a charged particle device, and more particularly to a vacuum container used in an electron storage ring.
【0002】[0002]
【従来の技術】従来、荷電粒子の加速または蓄積を行う
荷電粒子装置、たとえば、シンクロトロン等の電子蓄積
リングでは偏向電磁界により決定される所定の周回軌道
に電子、陽子等の荷電粒子を超高速で周回させる。荷電
粒子を超高速で長時間周回させるためには、荷電粒子が
周回する軌道を、たとえば、1×10-9Torr以下の
超真空に保つ必要がある。2. Description of the Related Art Conventionally, in a charged particle device for accelerating or accumulating charged particles, such as an electron storage ring such as a synchrotron, charged particles such as electrons and protons are superposed on a predetermined orbit determined by a deflection electromagnetic field. Orbit at high speed. In order to orbit the charged particles at an ultra-high speed for a long time, the orbit of the charged particles needs to be maintained in an ultravacuum of, for example, 1 × 10 −9 Torr or less.
【0003】図3は従来の真空槽の一例を示す一部切欠
斜視図である。この真空槽31はその一部にイオンポン
プ32を収納し、多数の透孔を有する隔壁33を介して
荷電粒子34が周回する空間35が形成されている。空
間35の前記隔壁33と反対側の側壁内には、冷却水が
流れる水路36、ヒーター37が設けられている。FIG. 3 is a partially cutaway perspective view showing an example of a conventional vacuum chamber. An ion pump 32 is housed in a part of the vacuum chamber 31, and a space 35 in which charged particles 34 circulate is formed through a partition 33 having a large number of through holes. In the side wall of the space 35 opposite to the partition wall 33, a water passage 36 through which cooling water flows and a heater 37 are provided.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、荷電粒
子が前記偏向電磁界中を周回するとき発生するシンクロ
トロン放射光(以下SOR光という)が前記真空槽の内
壁面に照射されると、そこから大量のガス放出を起こす
ため、荷電粒子の軌道空間を超真空に保つことが困難で
あった。即ち、従来装置においては、SOR光発生中
は、発生していないときに比較して真空度が1桁以上低
下した。However, when synchrotron radiation light (hereinafter referred to as SOR light) generated when charged particles orbit the deflection electromagnetic field is applied to the inner wall surface of the vacuum chamber, the synchrotron radiation light is emitted from the synchrotron radiation light. Since a large amount of gas is released, it is difficult to keep the charged particle orbital space in an ultra-vacuum. That is, in the conventional device, the degree of vacuum during the generation of the SOR light was reduced by one digit or more as compared with the time when the SOR light was not generated.
【0005】このようなSOR光によるガス放出対策と
して、従来の電子蓄積リングでは次のようないくつかの
方法が試みられている。As a countermeasure against such gas emission by SOR light, the following several methods have been tried in the conventional electron storage ring.
【0006】第1に、真空槽の材質としてガス放出の少
ない材料を採用する。第2に、真空槽の内面に電解研磨
などの表面処理を施す。第3に、大量のガス放出に対し
て大容量の真空ポンプを取り付ける。第4に、装置を数
年間運転して放出ガスが減少するのを待つ、いわゆる枯
れ効果を利用する。First, a material that releases less gas is used as the material of the vacuum chamber. Secondly, the inner surface of the vacuum chamber is subjected to surface treatment such as electrolytic polishing. Thirdly, a large capacity vacuum pump is installed for a large amount of outgassing. Fourth, it utilizes the so-called withering effect, which is to operate the device for several years and wait for the emission gas to decrease.
【0007】しかしながら、第1の方法は、真空槽を構
成する材質を制限し、第2の方法は製造工程が複雑化す
る欠点がある。また、第3の方法は装置が大型化し、第
4の方法では即功性に欠ける欠点があった。However, the first method has a drawback that the material forming the vacuum chamber is limited and the second method complicates the manufacturing process. Further, the third method has a drawback that the device becomes large in size, and the fourth method lacks immediateness.
【0008】したがって本発明の課題は、上記従来の方
法による欠点を全て除去し、簡単な構成によりSOR光
によるガス放出を低減できる電子蓄積リング用真空槽を
提供することにある。Accordingly, an object of the present invention is to provide a vacuum tank for an electron storage ring which eliminates all the drawbacks of the above conventional method and can reduce the gas emission due to the SOR light with a simple structure.
【0009】[0009]
【課題を解決するための手段】本発明によれば、内部を
荷電粒子が周回する真空槽と、この真空層内に所定の電
磁界を発生するように、前記真空槽外に設けられた偏向
電磁石と、前記荷電粒子が周回する際に発生するシンク
ロトロン放射光が照射される前記真空槽の内壁面に設け
られた断面がコの字型のビームダンパとを備えたことを
特徴とする電子蓄積リング用真空槽が得られる。According to the present invention, a vacuum chamber in which charged particles circulate, and a deflection provided outside the vacuum chamber so as to generate a predetermined electromagnetic field in the vacuum layer. Electron storage comprising an electromagnet and a beam damper having a U-shaped cross section provided on the inner wall surface of the vacuum chamber, which is irradiated with synchrotron radiation generated when the charged particles orbit. A vacuum chamber for rings is obtained.
【0010】また、本発明によれば、前記電子蓄積リン
グ用真空槽において、前記ビームダンパは前記真空槽の
内壁面に対して絶縁物を介して固定されるとともに、前
記真空槽に対して所定のバイアス電位が付与されている
ことを特徴とする電子蓄積リング用真空槽装置が得られ
る。Further, according to the present invention, in the electron storage ring vacuum chamber, the beam damper is fixed to the inner wall surface of the vacuum chamber via an insulator, and the beam damper has a predetermined size with respect to the vacuum chamber. A vacuum chamber device for an electron storage ring, which is characterized in that a bias potential is applied, is obtained.
【0011】[0011]
【作用】上記の電子蓄積リング用真空槽においては、荷
電粒子が周回する際に発生するシンクロトロン放射光は
前記真空槽の内壁面に設けられた断面がコの字型のビー
ムダンパに照射され、その材質により、ガス放出が抑制
される。このビームダンパは前記真空槽に対して所定の
バイアス電位が付与されているため、これによってもさ
らにガス放出が抑制される。In the above vacuum chamber for the electron storage ring, the synchrotron radiation generated when the charged particles circulate is radiated to the beam damper having a U-shaped cross section provided on the inner wall surface of the vacuum chamber, Gas release is suppressed by the material. Since this beam damper is applied with a predetermined bias potential with respect to the vacuum chamber, this also further suppresses gas release.
【0012】[0012]
【実施例】以下、図面を参照しながら本発明の実施例に
よる電子蓄積リング用真空槽を説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A vacuum chamber for an electron storage ring according to an embodiment of the present invention will be described below with reference to the drawings.
【0013】図1は、本発明の電子蓄積リング用真空槽
の構成を示す断面図である。FIG. 1 is a sectional view showing the structure of the electron storage ring vacuum chamber of the present invention.
【0014】真空槽11は端部に真空ポンプ12を収容
する第1の空間13と、内部を荷電粒子14が周回する
第2の空間15から構成されている。第1の空間13と
第2の空間15とは透孔を有する隔壁16により区分さ
れている。荷電粒子14は真空槽11の上下に配置され
る一対の偏向電磁石17、17により真空槽11内の所
定の周回軌道に沿って偏向され高速で走行する。すなわ
ち、荷電粒子14は図1の紙面に垂直な方向に走行する
際に、紙面に平行に上下方向に向かう電磁界により、周
回偏向されるとともに、その周回軌道の接線方向(図1
の矢印)方向にSOR光18を発生する。このSOR光
18が真空槽11内を直進して衝突する第2の空間15
の側面内壁19上には断面がコの字型のビームダンパ2
0が真空槽11の側面内壁19に沿って固定配置されて
いる。このビームダンパ20としては真空槽11とは異
なる、ガス放出の少ない材料を使用し、コの字型のビー
ム吸収部の各辺の長さは約5mmとしている。The vacuum chamber 11 is composed of a first space 13 for accommodating the vacuum pump 12 at its end and a second space 15 in which charged particles 14 circulate. The first space 13 and the second space 15 are separated by a partition wall 16 having a through hole. The charged particles 14 are deflected along a predetermined orbit in the vacuum chamber 11 by a pair of deflection electromagnets 17, 17 arranged above and below the vacuum chamber 11, and travel at high speed. That is, when the charged particles 14 travel in a direction perpendicular to the paper surface of FIG. 1, the charged particles 14 are circularly deflected by an electromagnetic field directed in the vertical direction parallel to the paper surface, and the tangential direction of the circular orbit (FIG.
SOR light 18 is generated in the direction of arrow). The second space 15 in which the SOR light 18 travels straight in the vacuum chamber 11 and collides with it.
The beam damper 2 with a U-shaped cross section is formed on the inner wall 19 of the side surface of the
0 is fixedly arranged along the inner side wall 19 of the vacuum chamber 11. The beam damper 20 is made of a material that is different from the vacuum chamber 11 and emits little gas, and the length of each side of the U-shaped beam absorbing portion is about 5 mm.
【0015】このビームダンパ20は、図2の要部拡大
図に示されるように、真空槽11の内壁19に対して絶
縁物21を介して固定されるとともに、真空槽11に対
してバイアス電源22により、所定のバイアス電位、た
とえば、正電位にバイアスされている。このようなバイ
アスの付与により、ビームダンパ20に照射されたSO
R光により生ずる光電子23はビームダンパ20のコの
字型のビーム吸収部24に吸収され、ガス放出の量を制
御することが可能である。ビームダンパ20には冷却の
ための配管25がハンダ付けまたは銀ロウ付けで固定さ
れている。The beam damper 20 is fixed to the inner wall 19 of the vacuum chamber 11 via an insulator 21 as shown in the enlarged view of the main part of FIG. Is biased to a predetermined bias potential, for example, a positive potential. By applying such a bias, the SO emitted to the beam damper 20
The photoelectrons 23 generated by the R light are absorbed by the U-shaped beam absorbing portion 24 of the beam damper 20, and the amount of gas release can be controlled. A pipe 25 for cooling is fixed to the beam damper 20 by soldering or silver brazing.
【0016】このような本発明の電子蓄積リング用真空
槽によれば、SOR光が照射されるビーム吸収部24の
後面24−aにおいて、実際に高エネルギーの直接光が
照射されるのは、軌道水平面26から1mm以内の部分
である。したがってSOR光の照射により放出される光
電子は後面24−aからあらゆる方向に放出され、断面
コの字型のビーム吸収部24の上面24−bあるいは下
面24−cに衝突するか、断面コの字型のビーム吸収部
24から真空槽11内に進行する。しかし、偏向電磁石
17、17による上下方向の電磁界により、偏向されビ
ーム吸収部24の下面24−cに衝突し、真空槽11内
に戻る確率は極めて小さい。この作用は前述したよう
に、ビームダンパ20に与えられたバイアス電位によ
り、一層助長される。したがって本発明によれば、SO
R光により生ずる光電子23の衝突はビームダンパ20
の断面コの字型のビーム吸収部24内に限定される。According to the electron storage ring vacuum chamber of the present invention as described above, the high energy direct light is actually radiated on the rear surface 24-a of the beam absorbing portion 24 to which the SOR light is radiated. It is a portion within 1 mm from the orbital horizontal plane 26. Therefore, the photoelectrons emitted by the irradiation of the SOR light are emitted from the rear surface 24-a in all directions and collide with the upper surface 24-b or the lower surface 24-c of the beam absorbing section 24 having a U-shaped cross section, or It advances into the vacuum chamber 11 from the beam-shaped beam absorbing portion 24. However, the probability that the deflected electromagnets 17, 17 are deflected by the vertical electromagnetic field to collide with the lower surface 24-c of the beam absorbing portion 24 and return to the vacuum chamber 11 is extremely small. This action is further promoted by the bias potential applied to the beam damper 20, as described above. Therefore, according to the present invention, SO
The collision of the photoelectrons 23 caused by the R light is caused by the beam damper 20.
It is limited to the inside of the beam absorbing part 24 having a U-shaped cross section.
【0017】[0017]
【発明の効果】本発明によれば、SOR光が照射される
ビームダンパーは真空槽とは独立したユニット構造を採
用できるため、ビームダンパーの材料を真空槽の構造材
料としての特性を配慮することなく、SOR光によるガ
ス放出の少ない性能だけに限定して選択できる。According to the present invention, since the beam damper irradiated with SOR light can employ a unit structure independent of the vacuum chamber, the characteristics of the beam damper as a structural material of the vacuum chamber must be taken into consideration. However, the selection can be limited to only the performance in which gas emission due to SOR light is small.
【0018】また、本発明によれば、SOR光をガス放
出の少ないビームダンパーに集中的に照射させることに
より、結果的に真空槽全体の放出ガスを低減する効果が
ある。Further, according to the present invention, the beam damper which emits less gas is intensively irradiated with the SOR light, and as a result, the gas emitted from the entire vacuum chamber is reduced.
【0019】さらに、ビームダンパー部の光電子の衝突
回数も従来の真空槽に比較して格段に増加するため、ガ
ス放出量が時間的に減少する効果(枯れ効果)も促進さ
せることができる。Further, the number of collisions of photoelectrons in the beam damper section is remarkably increased as compared with the conventional vacuum chamber, so that the effect of reducing the gas release amount with time (dead effect) can be promoted.
【図1】本発明の電子蓄積リング用真空槽の構成を示す
断面図である。FIG. 1 is a cross-sectional view showing the structure of a vacuum tank for an electron storage ring according to the present invention.
【図2】本発明の電子蓄積リング用真空槽の構成を示す
要部拡大図である。FIG. 2 is an enlarged view of a main part showing the configuration of a vacuum tank for an electron storage ring according to the present invention.
【図3】従来の電子蓄積リング用真空槽の構成を示す一
部切欠斜視図である。FIG. 3 is a partially cutaway perspective view showing the configuration of a conventional vacuum tank for an electron storage ring.
11 真空槽 12 真空ポンプ 13 第1の空間 14 荷電粒子 15 第2の空間 16 隔壁 17 偏向電磁石 18 SOR光 20 ビームダンパ 21 絶縁物 22 バイアス電源 23 光電子 24 ビーム吸収部 25 配管 26 軌道水平面 11 Vacuum Tank 12 Vacuum Pump 13 First Space 14 Charged Particles 15 Second Space 16 Partition Wall 17 Deflection Magnet 18 SOR Light 20 Beam Damper 21 Insulator 22 Bias Power Supply 23 Photoelectron 24 Beam Absorption Part 25 Piping 26 Orbital Horizontal Plane
Claims (2)
の真空層内に所定の電磁界を発生するように、前記真空
槽外に設けられた偏向電磁石と、前記荷電粒子が周回す
る際に発生するシンクロトロン放射光が照射される前記
真空槽の内壁面に設けられた断面がコの字型のビームダ
ンパとを備えたことを特徴とする電子蓄積リング用真空
槽。1. A vacuum chamber in which charged particles circulate inside, a deflection electromagnet provided outside the vacuum chamber so as to generate a predetermined electromagnetic field in the vacuum layer, and when the charged particles circulate. A vacuum chamber for an electron storage ring, comprising: a beam damper having a U-shaped cross section, which is provided on an inner wall surface of the vacuum chamber to which the synchrotron radiation generated in the above is irradiated.
いて、前記ビームダンパは前記真空槽の内壁面に対して
絶縁物を介して固定されるとともに、前記真空槽に対し
て所定のバイアス電位が付与されていることを特徴とす
る電子蓄積リング用真空槽。2. The vacuum chamber for an electron storage ring according to claim 1, wherein the beam damper is fixed to an inner wall surface of the vacuum chamber via an insulator, and a predetermined bias potential is applied to the vacuum chamber. A vacuum tank for an electron storage ring, which is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14717195A JPH097799A (en) | 1995-06-14 | 1995-06-14 | Vacuum vessel for electron accumulating ring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14717195A JPH097799A (en) | 1995-06-14 | 1995-06-14 | Vacuum vessel for electron accumulating ring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH097799A true JPH097799A (en) | 1997-01-10 |
Family
ID=15424195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14717195A Withdrawn JPH097799A (en) | 1995-06-14 | 1995-06-14 | Vacuum vessel for electron accumulating ring |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH097799A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100645389B1 (en) * | 2005-06-02 | 2006-11-14 | 지스코리아 주식회사 | Tube damper |
| JP2007027001A (en) * | 2005-07-20 | 2007-02-01 | Natl Inst Of Radiological Sciences | High frequency acceleration cavity and equipment |
| US12414220B2 (en) | 2019-10-11 | 2025-09-09 | Kabushiki Kaisha Toshiba | High-frequency acceleration cavity core and high-frequency acceleration cavity in which same is used |
-
1995
- 1995-06-14 JP JP14717195A patent/JPH097799A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100645389B1 (en) * | 2005-06-02 | 2006-11-14 | 지스코리아 주식회사 | Tube damper |
| JP2007027001A (en) * | 2005-07-20 | 2007-02-01 | Natl Inst Of Radiological Sciences | High frequency acceleration cavity and equipment |
| US12414220B2 (en) | 2019-10-11 | 2025-09-09 | Kabushiki Kaisha Toshiba | High-frequency acceleration cavity core and high-frequency acceleration cavity in which same is used |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20020903 |