JPH0982759A - Method of connecting substrates having protruding electrodes - Google Patents
Method of connecting substrates having protruding electrodesInfo
- Publication number
- JPH0982759A JPH0982759A JP7262072A JP26207295A JPH0982759A JP H0982759 A JPH0982759 A JP H0982759A JP 7262072 A JP7262072 A JP 7262072A JP 26207295 A JP26207295 A JP 26207295A JP H0982759 A JPH0982759 A JP H0982759A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- electrode
- solder layer
- protruding
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3465—Application of solder
- H05K3/3473—Plating of solder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
- H05K3/361—Assembling flexible printed circuits with other printed circuits
- H05K3/363—Assembling flexible printed circuits with other printed circuits by soldering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
Landscapes
- Wire Bonding (AREA)
Abstract
(57)【要約】
【目的】 隣接する突起電極間でショートが発生しない
ようにすることができる上、回路基板の接続端子の部分
が凸凹している場合でも、接続不良が発生しないように
する。
【構成】 フレキシブル配線基板21のフィルム基板2
2上に形成された接続パッド24上にニッケルメッキか
らなる突起電極27を形成し、突起電極27の表面に半
田メッキからなる半田層28を突起電極27よりも厚く
形成する。次に、熱処理を行うと、半田層28が一旦溶
融した後、表面張力により丸まるとともに突起電極27
の表面に集まり、半田ボール29が形成される。そし
て、フレキシブル配線基板21の突起電極27と回路基
板31の接続端子33とを半田ボール29を介して接続
する。この場合、半田ボール29が溶融しても横方向に
流れることがなく、また半田の量が多いので、接続不良
が発生しないようにすることができる。
(57) [Abstract] [Purpose] It is possible to prevent a short circuit from occurring between adjacent protruding electrodes, and to prevent a connection failure even if the connection terminal portion of the circuit board is uneven. . [Structure] Film substrate 2 of flexible wiring substrate 21
A protruding electrode 27 made of nickel plating is formed on the connection pad 24 formed on the second electrode 2, and a solder layer 28 made of solder plating is formed thicker than the protruding electrode 27 on the surface of the protruding electrode 27. Next, when heat treatment is performed, the solder layer 28 is once melted, and then the solder layer 28 is rounded by the surface tension and the protruding electrode 27 is formed.
And the solder balls 29 are formed on the surface. Then, the protruding electrodes 27 of the flexible wiring board 21 and the connection terminals 33 of the circuit board 31 are connected via the solder balls 29. In this case, even if the solder ball 29 melts, it does not flow in the lateral direction, and since the amount of solder is large, it is possible to prevent a connection failure.
Description
【0001】[0001]
【発明の属する技術分野】この発明は突起電極を有する
基板の接続方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for connecting substrates having protruding electrodes.
【0002】[0002]
【従来の技術】図3はフレキシブル配線基板1とハード
な回路基板11とを接続した場合の一例を示したもので
ある。フレキシブル配線基板1は、フィルム基板2上に
銅等からなる配線3が形成され、配線3のうち接続パツ
ド4となる部分を除く上面全体にソルダーレジストから
なる絶縁膜5が形成され、絶縁膜5に形成された開口部
6を介して露出された接続パツド4上にニッケルメッキ
からなる突起電極7が形成され、突起電極7の表面に半
田メッキからなる半田層8が形成された構造となってい
る。一方、回路基板11は、ハード基板12の下面に銅
等からなる接続端子13を含む配線14が形成された構
造となっている。そして、フレキシブル配線基板1の突
起電極7と回路基板11の接続端子13とは半田層8を
介して接続されている。2. Description of the Related Art FIG. 3 shows an example in which a flexible wiring board 1 and a hard circuit board 11 are connected. In the flexible wiring board 1, the wiring 3 made of copper or the like is formed on the film substrate 2, and the insulating film 5 made of a solder resist is formed on the entire upper surface of the wiring 3 except the portion to be the connection pad 4, and the insulating film 5 is formed. In this structure, a protruding electrode 7 made of nickel plating is formed on the connection pad 4 exposed through the opening 6 formed in the above, and a solder layer 8 made of solder plating is formed on the surface of the protruding electrode 7. There is. On the other hand, the circuit board 11 has a structure in which the wiring 14 including the connection terminal 13 made of copper or the like is formed on the lower surface of the hard board 12. The protruding electrodes 7 of the flexible wiring board 1 and the connection terminals 13 of the circuit board 11 are connected via the solder layer 8.
【0003】[0003]
【発明が解決しようとする課題】ところで、メッキは等
方的に成長するので、半田層8は、突起電極7の上方だ
けでなく、突起電極7の周囲における絶縁膜5上にも形
成されることになる。このため、半田層8の厚さを厚く
すると、突起電極7の周囲における絶縁膜5上に形成さ
れる半田層8の横方向の間隔も大きくなり、この結果突
起電極7と接続端子13とを半田層8を介して接続する
際、突起電極7の周囲における絶縁膜5上において溶融
した半田が横方向に流れて大きく広がり、ひいてはファ
インピッチ化を図った場合、隣接する突起電極7間でシ
ョートが発生するおそれがある。そこで、半田層8の厚
さを例えば0.03mm程度と薄くしているが、回路基
板11の接続端子13の部分が凸凹している場合には、
半田の量が少ないことにより、回路基板11の凸凹に対
応することができず、接続不良が発生することがあると
いう問題があった。この発明の課題は、隣接する突起電
極間でショートが発生しないようにすることができる
上、回路基板の接続端子の部分が凸凹している場合で
も、接続不良が発生しないようにすることである。By the way, since the plating grows isotropically, the solder layer 8 is formed not only on the bump electrodes 7 but also on the insulating film 5 around the bump electrodes 7. It will be. For this reason, if the thickness of the solder layer 8 is increased, the space between the solder layer 8 formed on the insulating film 5 around the protruding electrode 7 in the lateral direction also increases, and as a result, the protruding electrode 7 and the connection terminal 13 are separated from each other. When connecting via the solder layer 8, the molten solder on the insulating film 5 around the protruding electrodes 7 flows in the lateral direction and spreads widely, and when a fine pitch is achieved, short-circuiting occurs between the adjacent protruding electrodes 7. May occur. Therefore, the thickness of the solder layer 8 is reduced to, for example, about 0.03 mm, but when the connection terminals 13 of the circuit board 11 are uneven,
Since the amount of solder is small, there is a problem that it is not possible to deal with unevenness of the circuit board 11 and connection failure may occur. An object of the present invention is to prevent a short circuit from occurring between adjacent protruding electrodes, and to prevent a defective connection even when the connection terminal portion of the circuit board is uneven. .
【0004】[0004]
【課題を解決するための手段】請求項1記載の発明は、
基板上に形成されかつ該基板上に形成された絶縁膜に形
成された開口部を介して露出された接続パッド上に金属
メッキからなる突起電極を形成し、この突起電極の表面
に半田メッキからなる半田層を前記突起電極よりも厚く
形成し、熱処理を行って前記半田層を一旦溶融させた後
固化させることにより、前記突起電極の表面に半田ボー
ルを形成し、この半田ボールを介して前記突起電極を別
の基板の接続端子に接続するようにしたものである。請
求項3記載の発明は、基板上に形成されかつ該基板上に
形成された絶縁膜に形成された開口部を介して露出され
た接続パッド上に金属メッキからなる突起電極を形成
し、この突起電極の表面に半田メッキからなる半田層を
前記突起電極よりも厚く形成し、この半田層の周囲にお
ける前記絶縁膜上に前記突起電極と前記半田層の合計高
さよりも小さい厚さのスペーサを設け、この状態で前記
半田層を介して前記突起電極を別の基板の接続端子に接
続するようにしたものである。According to the first aspect of the present invention,
A protrusion electrode made of metal plating is formed on the connection pad formed on the substrate and exposed through the opening formed in the insulating film formed on the substrate, and a solder plating is formed on the surface of the protrusion electrode. Forming a solder layer thicker than the bump electrode, heat-treating the solder layer to once melt and then solidify it to form a solder ball on the surface of the bump electrode, The protruding electrode is connected to the connection terminal of another substrate. According to a third aspect of the present invention, a protruding electrode made of metal plating is formed on a connection pad formed on a substrate and exposed through an opening formed in an insulating film formed on the substrate. A solder layer made of solder plating is formed on the surface of the bump electrode to be thicker than the bump electrode, and a spacer having a thickness smaller than the total height of the bump electrode and the solder layer is formed on the insulating film around the solder layer. In this state, the protruding electrode is connected to the connection terminal of another substrate through the solder layer.
【0005】請求項1記載の発明によれば、半田層の厚
さを厚くしても、この半田層を熱処理により半田ボール
としているので、半田ボールが溶融しても横方向に流れ
ることがなく、したがって隣接する突起電極間でショー
トが発生しないようにすることができる上、回路基板の
接続端子の部分が凸凹している場合でも、半田の量が多
いので、接続不良が発生しないようにすることができ
る。請求項3記載の発明によれば、半田層の厚さを厚く
しても、スペーサによって半田の流れを堰き止めること
ができるので、隣接する突起電極間でショートが発生し
ないようにすることができる上、回路基板の接続端子の
部分が凸凹している場合でも、半田の量が多いので、接
続不良が発生しないようにすることができる。According to the first aspect of the present invention, even if the thickness of the solder layer is increased, the solder layer is formed into a solder ball by heat treatment. Therefore, even if the solder ball is melted, it does not flow laterally. Therefore, it is possible to prevent a short circuit from occurring between adjacent protruding electrodes, and even if the connection terminal portion of the circuit board is uneven, the amount of solder is large, so that a connection failure will not occur. be able to. According to the third aspect of the present invention, even if the thickness of the solder layer is increased, the flow of the solder can be blocked by the spacer, so that a short circuit can be prevented from occurring between the adjacent protruding electrodes. Even if the connection terminal portion of the circuit board is uneven, the amount of solder is large, so that connection failure can be prevented.
【0006】[0006]
【発明の実施の形態】図1(A)〜(C)はそれぞれこ
の発明の一実施形態における突起電極を有する基板の接
続方法の各工程を示したものである。そこで、これらの
図を順に参照しながら、この実施形態の接続方法につい
て説明する。1 (A) to 1 (C) show respective steps of a method of connecting substrates having protruding electrodes according to an embodiment of the present invention. Therefore, the connection method of this embodiment will be described with reference to these drawings in order.
【0007】まず、図1(A)に示すようなフレキシブ
ル配線基板21を用意する。このフレキシブル配線基板
21は、フィルム基板22上に銅等からなる配線23が
形成され、配線23のうち接続パツド24となる部分を
除く上面全体にソルダーレジストからなる絶縁膜25が
形成され、絶縁膜25に形成された開口部26を介して
露出された接続パッド24上にニッケルメッキからなる
突起電極27が形成され、突起電極27の表面に半田メ
ッキからなる半田層28が形成された構造となってい
る。この場合、各部の寸法は、一例として、フィルム基
板22の厚さが25μm、接続パッド24を含む配線2
3の厚さが35μm、絶縁膜25の厚さが10μm、開
口部26の大きさが0.2mm、突起電極27の高さが
0.1mm、半田層28の厚さが0.15mmとなって
いる。したがって、突起電極27と半田層28の合計高
さは0.25mmとなっている。First, a flexible wiring board 21 as shown in FIG. 1 (A) is prepared. In this flexible wiring board 21, a wiring 23 made of copper or the like is formed on a film substrate 22, and an insulating film 25 made of a solder resist is formed on the entire upper surface of the wiring 23 except a portion to be a connection pad 24. In this structure, the protruding electrode 27 made of nickel plating is formed on the connection pad 24 exposed through the opening 26 formed in 25, and the solder layer 28 made of solder plating is formed on the surface of the protruding electrode 27. ing. In this case, the size of each part is, as an example, the thickness of the film substrate 22 is 25 μm, and the wiring 2 including the connection pad 24 is included.
3 has a thickness of 35 μm, the insulating film 25 has a thickness of 10 μm, the opening 26 has a size of 0.2 mm, the protruding electrode 27 has a height of 0.1 mm, and the solder layer 28 has a thickness of 0.15 mm. ing. Therefore, the total height of the bump electrode 27 and the solder layer 28 is 0.25 mm.
【0008】次に、図1(B)に示すように、熱処理を
行うことにより、半田層28が一旦溶融した後、表面張
力により丸まるとともに突起電極27の表面に集まり、
この状態で固化することにより、突起電極27の表面に
半田ボール29を形成する。この場合、半田ボール29
の絶縁膜25上における高さは0.3mm程度となる。
なお、熱処理の方法としては、絶縁膜25の開口部26
をフォトリソグラフィにより形成する際のフォトマスク
を用いてレーザを照射することにより行うようにしても
よい。次に、図1(C)に示すような回路基板31を用
意する。この回路基板31は、ハードな基板32の下面
に銅等からなる接続端子33を含む配線34が形成され
た構造となっている。そして、フレキシブル配線基板2
1の突起電極27と回路基板31の接続端子33とを半
田ボール29を介して接続する。Next, as shown in FIG. 1B, heat treatment is performed to melt the solder layer 28 once, and then the solder layer 28 is rounded by the surface tension and gathered on the surface of the bump electrode 27.
By solidifying in this state, solder balls 29 are formed on the surfaces of the protruding electrodes 27. In this case, the solder ball 29
The height on the insulating film 25 is about 0.3 mm.
In addition, as a method of heat treatment, the opening 26 of the insulating film 25 is used.
It may be performed by irradiating with a laser using a photomask used when the above is formed by photolithography. Next, a circuit board 31 as shown in FIG. 1C is prepared. The circuit board 31 has a structure in which a wiring 34 including a connection terminal 33 made of copper or the like is formed on a lower surface of a hard board 32. And the flexible wiring board 2
The one protruding electrode 27 and the connection terminal 33 of the circuit board 31 are connected via the solder ball 29.
【0009】ところで、半田層28の厚さを0.15m
mと厚くしても、この半田層28を熱処理により半田ボ
ール29としているので、突起電極27と接続端子33
を半田ボール29を介して接続するとき、半田ボール2
9が一旦溶融しても、この溶融した半田が突起電極27
の表面から流れ去ることがなく、つまり半田ボール29
が溶融しても横方向に流れることがなく、したがって隣
接する突起電極間でショートが発生しないようにするこ
とができる。また、回路基板31の接続端子33の部分
が凸凹している場合でも、半田の量が多いので、接続不
良が発生しないようにすることができる。By the way, the thickness of the solder layer 28 is set to 0.15 m.
Even if the thickness is increased to m, since the solder layer 28 is formed into the solder ball 29 by heat treatment, the protruding electrode 27 and the connection terminal 33 are formed.
The solder balls 2 when connecting the
Even if 9 is melted once, this melted solder is
Does not run away from the surface of the solder ball 29
Does not flow in the lateral direction even when melted, so that it is possible to prevent a short circuit from occurring between adjacent protruding electrodes. Further, even if the connection terminals 33 of the circuit board 31 are uneven, the amount of solder is large, so that connection failure can be prevented.
【0010】なお、上記実施形態では、半田層28を熱
処理により半田ボール29とし、この半田ボール29を
介して突起電極27と接続端子33とを接続する場合に
ついて説明したが、これに限定されるものではない。例
えば、図1(A)に示すフレキシブル配線基板21を用
意し、次いで図2(A)に示すように、半田層28に対
応する部分に開口部42を有するポリイミド等の樹脂シ
ートからなるスペーサ41を絶縁膜25上に貼り付け
る。この場合、スペーサ41の厚さは、突起電極27と
半田層28の合計高さ0.25mmよりも小さく、例え
ば0.2mmとなっている。したがって、図2(A)に
示す状態では、半田層28はスペーサ41の表面側に
0.05mm突出されることになる。なお、スペーサ4
1は、半田層28を含む絶縁膜25の上面全体にポリイ
ミド等からなる膜を塗布して形成し、次いでこの膜の半
田層28と対応する部分にフォトリソグラフィにより開
口部を形成することにより、形成するようにしてもよ
い。In the above embodiment, the solder layer 28 is heat treated to form the solder balls 29, and the projecting electrodes 27 and the connection terminals 33 are connected via the solder balls 29. However, the present invention is not limited to this. Not a thing. For example, the flexible wiring board 21 shown in FIG. 1A is prepared, and then, as shown in FIG. 2A, a spacer 41 made of a resin sheet such as polyimide having an opening 42 at a portion corresponding to the solder layer 28. Is pasted on the insulating film 25. In this case, the thickness of the spacer 41 is smaller than the total height of the protruding electrode 27 and the solder layer 28 of 0.25 mm, for example, 0.2 mm. Therefore, in the state shown in FIG. 2A, the solder layer 28 is projected to the front surface side of the spacer 41 by 0.05 mm. The spacer 4
1 is formed by applying a film made of polyimide or the like on the entire upper surface of the insulating film 25 including the solder layer 28, and then forming an opening by photolithography in a portion of the film corresponding to the solder layer 28. It may be formed.
【0011】次に、図2(B)に示すように、フレキシ
ブル配線基板21の突起電極27と回路基板31の接続
端子33とを半田層28を介して接続する。この場合、
半田層28の厚さを0.15mmと厚くしても、スペー
サ41によって半田の流れを堰き止めることができるの
で、隣接する突起電極27間でショートが発生しないよ
うにすることができる。また、回路基板31の接続端子
33の部分が凸凹している場合でも、図2(A)に示す
状態においてスペーサ41の表面側に突出している半田
の量を多くすることにより、接続不良が発生しないよう
にすることができる。Next, as shown in FIG. 2B, the protruding electrodes 27 of the flexible wiring board 21 and the connection terminals 33 of the circuit board 31 are connected via the solder layer 28. in this case,
Even if the thickness of the solder layer 28 is increased to 0.15 mm, the flow of solder can be blocked by the spacer 41, so that a short circuit can be prevented from occurring between the adjacent protruding electrodes 27. Further, even when the connection terminal 33 portion of the circuit board 31 is uneven, by increasing the amount of solder protruding to the surface side of the spacer 41 in the state shown in FIG. You can choose not to.
【0012】なお、上記実施形態では、フレキシブル配
線基板21の突起電極27とハードな回路基板31の接
続端子33とを接続する場合について説明したが、これ
に限定されるものではない。例えば、シリコン基板等か
らなる半導体基板に形成された突起電極とフレキシブル
配線基板またはハードな回路基板に形成された接続端子
とを接続する場合にも、この発明を適用することができ
る。In the above embodiment, the case where the protruding electrode 27 of the flexible wiring board 21 and the connection terminal 33 of the hard circuit board 31 are connected has been described, but the present invention is not limited to this. For example, the present invention can also be applied to the case where a protruding electrode formed on a semiconductor substrate made of a silicon substrate or the like is connected to a connection terminal formed on a flexible wiring substrate or a hard circuit substrate.
【0013】[0013]
【発明の効果】以上説明したように、請求項1記載の発
明によれば、半田層の厚さを厚くしても、この半田層を
熱処理により半田ボールとしているので、半田ボールが
溶融しても横方向に流れることがなく、したがって隣接
する突起電極間でショートが発生しないようにすること
ができる上、回路基板の接続端子の部分が凸凹している
場合でも、半田の量が多いので、接続不良が発生しない
ようにすることができる。また、請求項3記載の発明に
よれば、半田層の厚さを厚くしても、スペーサによって
半田の流れを堰き止めることができるので、隣接する突
起電極間でショートが発生しないようにすることができ
る上、回路基板の接続端子の部分が凸凹している場合で
も、半田の量が多いので、接続不良が発生しないように
することができる。As described above, according to the first aspect of the invention, even if the thickness of the solder layer is increased, the solder layer is formed into the solder ball by the heat treatment. Also does not flow in the lateral direction, so that it is possible to prevent a short circuit from occurring between adjacent protruding electrodes, and even if the connection terminal portion of the circuit board is uneven, the amount of solder is large, It is possible to prevent connection failure. Further, according to the invention of claim 3, even if the thickness of the solder layer is increased, the spacer can block the flow of the solder, so that a short circuit does not occur between the adjacent protruding electrodes. In addition, even when the connection terminal portion of the circuit board is uneven, the amount of solder is large, so that a connection failure can be prevented.
【図1】(A)〜(C)はそれぞれこの発明の一実施形
態における突起電極を有する基板の接続方法の各工程を
示す断面図。1A to 1C are cross-sectional views showing respective steps of a method of connecting substrates having protruding electrodes according to an embodiment of the present invention.
【図2】(A)および(B)はそれぞれこの発明の一実
施形態における突起電極を有する基板の接続方法の各工
程を示す断面図。2A and 2B are cross-sectional views showing respective steps of a method of connecting substrates having protruding electrodes according to an embodiment of the present invention.
【図3】従来の突起電極を有する基板の接続方法を説明
するために示す断面図。FIG. 3 is a cross-sectional view shown for explaining a conventional method for connecting substrates having protruding electrodes.
21 フレキシブル配線基板 24 接続パツド 25 絶縁膜 26 開口部 27 突起電極 28 半田層 29 半田ボール 31 回路基板 33 接続端子 41 スペーサ 21 flexible wiring board 24 connection pad 25 insulating film 26 opening 27 protruding electrode 28 solder layer 29 solder ball 31 circuit board 33 connection terminal 41 spacer
Claims (4)
れた絶縁膜に形成された開口部を介して露出された接続
パッド上に金属メッキからなる突起電極を形成し、この
突起電極の表面に半田メッキからなる半田層を前記突起
電極よりも厚く形成し、熱処理を行って前記半田層を一
旦溶融させた後固化させることにより、前記突起電極の
表面に半田ボールを形成し、この半田ボールを介して前
記突起電極を別の基板の接続端子に接続することを特徴
とする突起電極を有する基板の接続方法。1. A protrusion electrode made of metal plating is formed on a connection pad formed on a substrate and exposed through an opening formed in an insulating film formed on the substrate. A solder layer formed of solder plating on the surface is formed to be thicker than the protruding electrodes, and a heat treatment is performed to melt and then solidify the solder layers to form solder balls on the surfaces of the protruding electrodes. A method of connecting a substrate having a protruding electrode, comprising connecting the protruding electrode to a connection terminal of another substrate via a ball.
理は、前記絶縁膜の開口部をフォトリソグラフィにより
形成する際のフォトマスクを用いてレーザを照射するこ
とにより行うことを特徴とする突起電極を有する基板の
接続方法。2. The bump electrode according to claim 1, wherein the heat treatment is performed by irradiating a laser with a photomask used when forming the opening of the insulating film by photolithography. A method of connecting substrates having a.
れた絶縁膜に形成された開口部を介して露出された接続
パッド上に金属メッキからなる突起電極を形成し、この
突起電極の表面に半田メッキからなる半田層を前記突起
電極よりも厚く形成し、この半田層の周囲における前記
絶縁膜上に前記突起電極と前記半田層の合計高さよりも
小さい厚さのスペーサを設け、この状態で前記半田層を
介して前記突起電極を別の基板の接続端子に接続するこ
とを特徴とする突起電極を有する基板の接続方法。3. A protrusion electrode made of metal plating is formed on a connection pad formed on a substrate and exposed through an opening formed in an insulating film formed on the substrate, and the protrusion electrode of the protrusion electrode is formed. A solder layer made of solder plating is formed on the surface to be thicker than the protruding electrode, and a spacer having a thickness smaller than the total height of the protruding electrode and the solder layer is provided on the insulating film around the solder layer. A method of connecting a substrate having a protruding electrode, comprising connecting the protruding electrode to a connection terminal of another substrate via the solder layer in this state.
ーサは前記絶縁膜上に貼り付けられた樹脂シートからな
ることを特徴とする突起電極を有する基板の接続方法。4. The method for connecting substrates according to claim 3, wherein the spacer is made of a resin sheet attached on the insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7262072A JPH0982759A (en) | 1995-09-18 | 1995-09-18 | Method of connecting substrates having protruding electrodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7262072A JPH0982759A (en) | 1995-09-18 | 1995-09-18 | Method of connecting substrates having protruding electrodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0982759A true JPH0982759A (en) | 1997-03-28 |
Family
ID=17370646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7262072A Pending JPH0982759A (en) | 1995-09-18 | 1995-09-18 | Method of connecting substrates having protruding electrodes |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0982759A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3045697U (en) * | 1997-07-28 | 1998-02-13 | 株式会社サトーセン | Package substrate for chip mounting |
| WO2006035548A1 (en) * | 2004-09-29 | 2006-04-06 | Rohm Co., Ltd. | Wiring board and semiconductor device |
| US7214887B2 (en) | 2003-05-19 | 2007-05-08 | Matsushita Electric Industrial Co., Ltd. | Electronic circuit connecting structure, and its connecting method |
| JP2010283404A (en) * | 2010-09-27 | 2010-12-16 | Rohm Co Ltd | Semiconductor device |
| JP2013175775A (en) * | 2013-05-02 | 2013-09-05 | Rohm Co Ltd | Semiconductor device |
| US20160225730A1 (en) * | 2013-10-09 | 2016-08-04 | Waseda University | Electrode connection structure and electrode connection method |
-
1995
- 1995-09-18 JP JP7262072A patent/JPH0982759A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3045697U (en) * | 1997-07-28 | 1998-02-13 | 株式会社サトーセン | Package substrate for chip mounting |
| US7214887B2 (en) | 2003-05-19 | 2007-05-08 | Matsushita Electric Industrial Co., Ltd. | Electronic circuit connecting structure, and its connecting method |
| WO2006035548A1 (en) * | 2004-09-29 | 2006-04-06 | Rohm Co., Ltd. | Wiring board and semiconductor device |
| JP2006100552A (en) * | 2004-09-29 | 2006-04-13 | Rohm Co Ltd | Wiring board and semiconductor device |
| US7456502B2 (en) | 2004-09-29 | 2008-11-25 | Rohm Co., Ltd. | Wiring board with connection electrode formed in opening and semiconductor device using the same |
| KR101140518B1 (en) * | 2004-09-29 | 2012-04-30 | 로무 가부시키가이샤 | Wiring b0ard and semic0nduct0r device |
| JP2010283404A (en) * | 2010-09-27 | 2010-12-16 | Rohm Co Ltd | Semiconductor device |
| JP2013175775A (en) * | 2013-05-02 | 2013-09-05 | Rohm Co Ltd | Semiconductor device |
| US20160225730A1 (en) * | 2013-10-09 | 2016-08-04 | Waseda University | Electrode connection structure and electrode connection method |
| US9601448B2 (en) * | 2013-10-09 | 2017-03-21 | Waseda University | Electrode connection structure and electrode connection method |
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