JPH098432A - High-frequency circuit device - Google Patents

High-frequency circuit device

Info

Publication number
JPH098432A
JPH098432A JP7156182A JP15618295A JPH098432A JP H098432 A JPH098432 A JP H098432A JP 7156182 A JP7156182 A JP 7156182A JP 15618295 A JP15618295 A JP 15618295A JP H098432 A JPH098432 A JP H098432A
Authority
JP
Japan
Prior art keywords
electronic component
metal
dielectric substrate
metal plate
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7156182A
Other languages
Japanese (ja)
Other versions
JP3216482B2 (en
Inventor
Susumu Tochi
享 土地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15618295A priority Critical patent/JP3216482B2/en
Publication of JPH098432A publication Critical patent/JPH098432A/en
Application granted granted Critical
Publication of JP3216482B2 publication Critical patent/JP3216482B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0201Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/05Insulated conductive substrates, e.g. insulated metal substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/182Printed circuits structurally associated with non-printed electric components associated with components mounted in printed circuit boards [PCB], e.g. insert-mounted components [IMC]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07551Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07552Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in structures or sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/521Structures or relative sizes of bond wires
    • H10W72/527Multiple bond wires having different sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/533Cross-sectional shape
    • H10W72/534Cross-sectional shape being rectangular
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5445Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • H10W72/5475Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

(57)【要約】 【目的】 高周波回路装置において、動作時に電子部品
に熱がこもることを未然に防止し、電子部品を安定な状
態で動作させる。 【構成】 誘電体基板(1)と金属製キャリア(2)と
の間に、熱伝導率が大きくかつ厚さが誘電体基板(1)
や金属製キャリア(2)に比べて十分に薄い金属板(1
0)を挿入し、その上に発熱の大きい電子部品を実装す
ることにより、動作時電子部品で発生する熱が、挿入さ
れた金属板(10)に沿って、広範囲にしかも急速に拡
散する。
(57) [Abstract] [Purpose] In a high frequency circuit device, it is possible to prevent heat from being accumulated in an electronic component during operation and to operate the electronic component in a stable state. [Structure] Between the dielectric substrate (1) and the metal carrier (2), the dielectric substrate (1) has a large thermal conductivity and a large thickness.
Or a metal plate (1) that is sufficiently thinner than the metal carrier (2)
By inserting 0) and mounting an electronic component that generates a large amount of heat thereon, the heat generated in the electronic component during operation diffuses rapidly over a wide range along the inserted metal plate (10).

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は高周波回路装置に関
し、特に発熱の大きい電子部品を用いるものに適用し得
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency circuit device, and is particularly applicable to a device using an electronic part which generates a large amount of heat.

【0002】[0002]

【従来の技術】図17は、従来の高周波回路装置を示す
構造であり、図中において1は表面に整合回路、バイア
ス回路等を有し、裏面に接地用導体を有する誘電体基
板、2は接地用導体を介して誘電体基板1を固定する金
属製キャリア、3はこの高周波回路装置と外部回路を接
続するリードである。
2. Description of the Related Art FIG. 17 shows a structure of a conventional high-frequency circuit device. In the figure, 1 is a dielectric substrate having a matching circuit, a bias circuit, etc. on the front surface, and a grounding conductor on the back surface, and 2 is A metal carrier 3 for fixing the dielectric substrate 1 via a grounding conductor is a lead for connecting the high-frequency circuit device and an external circuit.

【0003】また、図18はこの高周波回路装置表面上
の増幅器の詳細図であり、図において、4は誘電体基板
1上のマイクロストリップ線路、5は発熱の大きい表面
実装型電子部品、6はマイクロストリップ線路4と前記
表面実装型電子部品5を接続する導電性ワイヤである。
また図19は図18の断面図である。
FIG. 18 is a detailed view of the amplifier on the surface of this high-frequency circuit device. In the figure, 4 is a microstrip line on the dielectric substrate 1, 5 is a surface-mounted electronic component with large heat generation, and 6 is It is a conductive wire that connects the microstrip line 4 and the surface-mounted electronic component 5.
19 is a sectional view of FIG.

【0004】図17において、誘電体基板1の表面に
は、整合回路、バイアス回路等が設置されており、増幅
器部で高周波信号を増幅するように構成されている。金
属製キャリア2は誘電体基板1の裏面の接地用導体と、
半田若しくは導電性接着剤により接着されている。この
金属製キャリア2は、用途に応じて外部接地導体部に導
電性ネジ、半田若しくは導電性接着剤により固定されて
いる。これにより、誘電体基板1の裏面の接地用導体
に、接地面電位が供給される。
In FIG. 17, a matching circuit, a bias circuit, etc. are installed on the surface of the dielectric substrate 1, and the amplifier section is configured to amplify a high frequency signal. The metal carrier 2 is a grounding conductor on the back surface of the dielectric substrate 1,
It is adhered by solder or a conductive adhesive. The metal carrier 2 is fixed to the external ground conductor portion by a conductive screw, solder or a conductive adhesive depending on the application. As a result, the ground plane potential is supplied to the grounding conductor on the back surface of the dielectric substrate 1.

【0005】また、増幅器部では図18に示すように、
誘電体基板1にあけられた穴を通して表面実装型電子部
品5が金属製キャリア2上に半田もしくは導電性接着剤
により接着されており、この表面実装型電子部品の電極
部と誘電体基板1上のマイクロストリップ線路4とは、
導電性ワイヤ6で接続されている。
In the amplifier section, as shown in FIG.
The surface mount type electronic component 5 is adhered to the metal carrier 2 by solder or a conductive adhesive through a hole formed in the dielectric substrate 1. The electrode portion of the surface mount type electronic component and the dielectric substrate 1 are What is the microstrip line 4 of
It is connected by a conductive wire 6.

【0006】[0006]

【発明が解決しようとする課題】従来の高周波回路装置
は以上のように構成されており、誘電体基板1と金属製
キャリア2とは半田若しくは導電性接着剤により接着さ
れている。特に半田付けで接着する場合、誘電体基板1
と金属製キャリア2には 100〔℃〕以上の高温状態とな
るが、このとき誘電体基板1と金属製キャリア2との熱
膨張係数に差がありすぎると、誘電体基板1が破損して
しまうおそれがある。
The conventional high-frequency circuit device is constructed as described above, and the dielectric substrate 1 and the metallic carrier 2 are bonded by solder or a conductive adhesive. Especially when bonding by soldering, the dielectric substrate 1
The metal carrier 2 and the metal carrier 2 are in a high temperature state of 100 [° C.] or more. At this time, if there is an excessive difference in the coefficient of thermal expansion between the dielectric substrate 1 and the metal carrier 2, the dielectric substrate 1 is damaged. There is a risk that

【0007】このため金属製キャリア2の材質は、誘電
体基板1の熱膨張係数に近いものから選ぶ必要がある
が、この際に熱伝導率の小さい材質を選ばざるを得ない
場合もある。ところがこのようにすると高周波回路装置
の動作時に表面実装型電子部品5で発生する熱の拡散と
して、横方向は図20のAR1に示すように、下方向は
図21のAR2に示すように、いずれも狭い範囲に止ま
る。
For this reason, it is necessary to select the material of the metallic carrier 2 from a material having a coefficient of thermal expansion close to that of the dielectric substrate 1, but in this case, there is a case where a material having a small thermal conductivity must be selected. However, in this way, as diffusion of heat generated in the surface-mounted electronic component 5 during operation of the high-frequency circuit device, the horizontal direction is as shown by AR1 in FIG. 20, and the downward direction is as shown by AR2 in FIG. Also stops in a narrow range.

【0008】なお、図20及び図21において、AR1
は電子部品で発生した熱が単位時間tに金属製キャリア
2上を横方向に拡散するエリアであり、AR2は電子部
品で発生した熱が単位時間tに金属製キャリア2上を下
方向に拡散するエリアである。この結果、表面実装型電
子部品5に熱がこもることになり、表面実装型電子部品
5の動作に悪影響を与えるおそれがあった。
In FIGS. 20 and 21, AR1
Is an area where the heat generated by the electronic component diffuses laterally on the metallic carrier 2 in a unit time t, and AR2 indicates that the heat generated by the electronic component diffuses downward on the metallic carrier 2 in a unit time t. It is an area to do. As a result, heat is accumulated in the surface-mounted electronic component 5, which may adversely affect the operation of the surface-mounted electronic component 5.

【0009】この発明は上記のような問題点を解消する
ためになされたもので、動作時に電子部品に熱がこもる
ことを未然に防止し、電子部品を安定な状態で動作させ
ることができる高周波回路装置を提供することを目的と
する。
The present invention has been made in order to solve the above-mentioned problems, and it is possible to prevent heat from being accumulated in the electronic parts during operation and to operate the electronic parts in a stable state. It is an object to provide a circuit device.

【0010】[0010]

【課題を解決するための手段】この発明に係る高周波回
路装置は、表面に整合回路、バイアス回路等が配され、
裏面に接地用導体が配された誘電体基板と、その誘電体
基板に形成された開口中又は切欠き部に配される発熱の
大きい電子部品と、接地用導体を介して誘電体基板を固
定する金属製キャリアと、誘電体基板と金属製キャリア
との間に介挿され、熱伝導率が大きくかつ厚さが誘電体
基板及び金属製キャリアに比して十分に薄い金属板とを
備え、金属板上に電子部品を実装するものである。
A high frequency circuit device according to the present invention has a matching circuit, a bias circuit, etc. arranged on the surface thereof.
Dielectric board with grounding conductor on the back side, electronic parts with large heat generation in the opening or notch formed in the dielectric board, and fixing the dielectric board through the grounding conductor A metal carrier to be provided, and a metal plate that is interposed between the dielectric substrate and the metal carrier and has a large thermal conductivity and a thickness that is sufficiently thin compared to the dielectric substrate and the metal carrier, Electronic components are mounted on a metal plate.

【0011】さらに次の発明に係る高周波回路装置は、
電子部品の形状に応じた金属製台座を備え、電子部品の
厚さが誘電体基板の厚さより薄い場合、金属板上に金属
製台座上を配し、その金属製台座上に電子部品を実装す
るものである。
A high frequency circuit device according to the next invention is
Equipped with a metal pedestal according to the shape of the electronic component, if the thickness of the electronic component is thinner than the thickness of the dielectric substrate, place the metal pedestal on the metal plate and mount the electronic component on the metal pedestal To do.

【0012】さらに次の発明に係る高周波回路装置は、
誘電体基板の開口中又は切欠き部に、金属製キャリア上
又は金属製台座を通じて複数の電子部品を実装するもの
である。
A high frequency circuit device according to the next invention is
A plurality of electronic components are mounted on a metal carrier or through a metal pedestal in the opening or notch of the dielectric substrate.

【0013】[0013]

【作用】誘電体基板と金属製キャリアとの間に、熱伝導
率が大きくかつ厚さが誘電体基板や金属製キャリアに比
べて十分に薄い金属板を挿入し、その上に発熱の大きい
電子部品を実装することにより、動作時電子部品で発生
する熱が、挿入された金属板に沿って、広範囲にしかも
急速に拡散する。かくして、電子部品に熱がこもること
を未然に防止し、安定な状態で動作させることができ
る。
Function: A metal plate having a large thermal conductivity and a thickness sufficiently smaller than that of the dielectric substrate or the metal carrier is inserted between the dielectric substrate and the metal carrier, and an electron having a large heat generation is placed on the metal plate. By mounting the components, the heat generated by the electronic components during operation diffuses rapidly along a wide area along the inserted metal plate. Thus, it is possible to prevent heat from being accumulated in the electronic component and to operate it in a stable state.

【0014】さらに、電子部品の厚さが誘電体基板の厚
さより薄い場合、金属板上に金属製台座上を配し、その
金属製台座上に電子部品を実装することにより、動作時
電子部品で発生する熱が、金属製台座を通じて挿入され
た金属板に沿って、広範囲にしかも急速に拡散する。か
くして、電子部品に熱がこもることを未然に防止し、安
定な状態で動作させることができる。
Further, when the thickness of the electronic component is thinner than the thickness of the dielectric substrate, a metal pedestal is placed on a metal plate, and the electronic component is mounted on the metal pedestal, so that the electronic component during operation is mounted. The heat generated by the heat diffuses widely and rapidly along the metal plate inserted through the metal pedestal. Thus, it is possible to prevent heat from being accumulated in the electronic component and to operate it in a stable state.

【0015】さらに、誘電体基板の開口中又は切欠き部
に、金属製キャリア上又は金属製台座を通じて複数の電
子部品を実装することにより、動作時複数の電子部品で
発生する熱が、金属製台座を通じて又は直接挿入された
金属板に沿って、広範囲にしかも急速に拡散する。かく
して、複数の電子部品に熱がこもることを未然に防止
し、安定な状態で動作させることができる。
Furthermore, by mounting a plurality of electronic components on the metal carrier or through the metal pedestal in the opening or the notch of the dielectric substrate, the heat generated by the plurality of electronic components during operation is generated by the metal. It diffuses extensively and rapidly, either through the pedestal or along a metal plate inserted directly. Thus, it is possible to prevent heat from accumulating in the plurality of electronic components and to operate the electronic components in a stable state.

【0016】[0016]

【実施例】以下図面を参照しながら、この発明の実施例
を詳述する。
Embodiments of the present invention will be described in detail below with reference to the drawings.

【0017】実施例1.図17との対応部分に同一符号
を付した図1においては全体としてこの発明による高周
波回路装置の実施例1を示す。この実施例1の場合、誘
電体基板1と金属製キャリア2との間に、熱伝導率が大
きく、かつその厚さが誘電体基板1や金属製キャリア2
に比べて十分に薄い金属板10を挿入し、その上に表面
実装型電子部品5を実装した点において、図17に上述
した従来のものと相違する。また図18との対応部分に
同一符号を付した図2は、金属板10を挿入した場合の
増幅器部周辺の詳細を示し、また図19との対応部分に
同一符号を付した図3は図2の断面を示す。
Embodiment 1. FIG. 1 in which parts corresponding to those in FIG. 17 are designated by the same reference numerals shows the first embodiment of the high-frequency circuit device according to the present invention as a whole. In the case of Example 1, the dielectric substrate 1 and the metallic carrier 2 have a large thermal conductivity between the dielectric substrate 1 and the metallic carrier 2.
17 is different from the conventional one described above in that the surface-mounted electronic component 5 is mounted on the metal plate 10 which is sufficiently thinner than that of FIG. Further, FIG. 2 in which parts corresponding to those in FIG. 18 are designated by the same reference numerals shows details around the amplifier section when the metal plate 10 is inserted, and FIG. 3 in which parts corresponding to those in FIG. 2 shows a cross section.

【0018】次に動作について説明する。高周波回路装
置の動作時に表面実装型電子部品5で発生する熱の拡散
は、下方向の場合は金属板10の厚さが誘電体基板1や
金属製キャリア2に比べて十分に薄いので、従来の場合
とあまり差はないが、横方向の場合は金属板10の熱伝
導率が大きいため、図4のAR10に示すように金属板
10に沿って広範囲にしかも急速に拡散する。なおAR
10は電子部品で発生した熱が単位時間tに金属板10
の横方向に拡散するエリアである。
Next, the operation will be described. The diffusion of heat generated in the surface-mounted electronic component 5 during operation of the high-frequency circuit device is low because the thickness of the metal plate 10 in the downward direction is sufficiently smaller than that of the dielectric substrate 1 and the metal carrier 2. Although there is not much difference from the case of, the thermal conductivity of the metal plate 10 is large in the case of the lateral direction, so that the metal plate 10 diffuses widely and rapidly along the metal plate 10 as shown by AR10 in FIG. AR
10 indicates that the heat generated by the electronic component is the metal plate 10 per unit time t.
Is an area that spreads in the horizontal direction.

【0019】これにより、表面実装型電子部品5に熱が
こもることはなくなり、安定な状態で表面実装型電子部
品5が動作し続けることができるようになる。また、こ
の金属板10は、その厚さが誘電体基板1や金属製キャ
リア2に比べて十分に薄いので、金属板10の熱膨張係
数が誘電体基板1や金属製キャリア2の熱膨張係数と差
があったとしてもその影響はほとんどなく、接着時に誘
電体基板1が破損することもない。
As a result, the surface mount type electronic component 5 is prevented from retaining heat, and the surface mount type electronic component 5 can continue to operate in a stable state. Further, since the metal plate 10 is sufficiently thinner than the dielectric substrate 1 and the metal carrier 2, the coefficient of thermal expansion of the metal plate 10 is the same as that of the dielectric substrate 1 and the metal carrier 2. Even if there is a difference, there is almost no effect, and the dielectric substrate 1 is not damaged during bonding.

【0020】実施例2.実施例1では、表面実装型電子
部品を直接金属製キャリアに接着する場合について述べ
たが、表面実装型電子部品の高さが低い場合には、高さ
調整のために表面実装型電子部品の下に熱伝導率の大き
い金属製台座を設ける場合がある。この場合もこの発明
は有効である。これを実施例2として図1との対応部分
に同一符号を付した図5に示す。この実施例2では、高
さの低い表面実装型電子部品12と熱伝導率の大きい金
属製台座13を有する点において、実施例1と相違す
る。またこの実施例2の断面を図6に示す。
Example 2. In the first embodiment, the case where the surface mount type electronic component is directly adhered to the metal carrier has been described. However, when the height of the surface mount type electronic component is low, the surface mount type electronic component is adjusted for height adjustment. A metal pedestal with high thermal conductivity may be provided below. Even in this case, the present invention is effective. This is shown as a second embodiment in FIG. 5, in which parts corresponding to those in FIG. The second embodiment differs from the first embodiment in that the surface mount electronic component 12 having a low height and the metal pedestal 13 having a large thermal conductivity are provided. A cross section of the second embodiment is shown in FIG.

【0021】この場合、高周波回路装置の動作時に表面
実装型電子部品12で発生した熱は、金属製台座13の
熱伝導率が大きいので、金属製台座13にこもることな
く急速に金属板10に伝わる。
In this case, since the heat generated in the surface mount type electronic component 12 during the operation of the high frequency circuit device has a large thermal conductivity of the metal pedestal 13, the metal pedestal 13 can be quickly retained on the metal plate 10. It is transmitted.

【0022】この場合の熱の拡散も実施例1で述べたよ
うに、下方向の場合は、金属板10の厚さが誘電体基板
1や金属製キャリア2に比べて十分に薄いので、従来の
場合とあまり差はないが、横方向の場合は金属板10の
熱伝導率が大きいために、図7のAR11に示すよう
に、金属板10に沿って広範囲にしかも急速に拡散す
る。なおAR11は電子部品で発生した熱が単位時間t
に金属板10の横方向に拡散するエリアである。
In the case of heat diffusion in this case as well, in the case of the downward direction, the thickness of the metal plate 10 is sufficiently smaller than that of the dielectric substrate 1 and the metal carrier 2 as described in the first embodiment. Although there is not much difference from the case of, the metal plate 10 has a large thermal conductivity in the case of the lateral direction, so that it diffuses widely and rapidly along the metal plate 10 as indicated by AR11 in FIG. In addition, the heat generated by the electronic components in AR11 is the unit time t
It is an area that is diffused in the lateral direction of the metal plate 10.

【0023】これにより、表面実装型電子部品12に熱
がこもることはなくなり、安定な状態で表面実装型電子
部品12が動作し続けることができるようになる。
As a result, the surface mount type electronic component 12 is prevented from retaining heat, and the surface mount type electronic component 12 can continue to operate in a stable state.

【0024】実施例3.実施例1及び実施例2では、表
面実装型電子部品を用いる場合について述べたが、リー
ド付パッケージ型電子部品を用いる場合にも、この発明
は有効である。これを実施例3として図1との対応部分
に同一符号を付した図8に示す。この実施例3では、リ
ード付パッケージ型電子部品16を有し、導電性ワイヤ
6を有しない点において実施例1と相違する。またこの
実施例3の断面を図9に示す。
Embodiment 3 FIG. Although the first and second embodiments describe the case where the surface mount type electronic component is used, the present invention is also effective when the leaded package type electronic component is used. This is shown as a third embodiment in FIG. 8 in which parts corresponding to those in FIG. The third embodiment differs from the first embodiment in that the packaged electronic component with leads 16 is provided and the conductive wire 6 is not provided. A cross section of the third embodiment is shown in FIG.

【0025】この場合、高周波回路装置の動作時にリー
ド付パッケージ型電子部品16で発生した熱の拡散は、
実施例1に上述したように、下方向の場合は、金属板1
0の厚さが誘電体基板1や金属製キャリア2に比べて十
分に薄いので、従来の場合とあまり差はないが、横方向
の場合は金属板10の熱伝導率が大きいために図10の
AR12に示すように、金属板10に沿って広範囲にし
かも急速に拡散する。なおAR12は電子部品で発生し
た熱が単位時間tに金属板10の横方向に拡散するエリ
アである。
In this case, the diffusion of heat generated in the leaded package type electronic component 16 during the operation of the high frequency circuit device is
As described in the first embodiment, in the case of the downward direction, the metal plate 1
Since the thickness of 0 is sufficiently thinner than the dielectric substrate 1 and the metal carrier 2, there is not much difference from the conventional case, but in the case of the lateral direction, the thermal conductivity of the metal plate 10 is large, so that FIG. As shown in AR12, the metal diffuses rapidly along a wide area along the metal plate 10. The AR 12 is an area where heat generated in the electronic component diffuses in the lateral direction of the metal plate 10 in a unit time t.

【0026】これにより、リード付パッケージ型電子部
品16に熱がこもることはなくなり、安定な状態でリー
ド付パッケージ型電子部品16が動作し続けることがで
きるようになる。
As a result, heat is not trapped in the package electronic component 16 with leads, and the package electronic component 16 with leads can continue to operate in a stable state.

【0027】実施例4.実施例3では、リード付パッケ
ージ型電子部品を用いる場合について述べたが、ネジ止
め式のリード付パッケージ型電子部品を用いる場合に
も、この発明は有効である。これを実施例4として図8
との対応部分に同一符号を付した図11に示す。この実
施例4では、ネジ止め式のリード付パッケージ型電子部
品19と取付けネジ20を有する点において実施例3の
場合と相違する。またこの実施例4の断面を図12に示
す。
Example 4. In the third embodiment, the case of using the package electronic component with leads has been described, but the present invention is also effective when using the package electronic component with leads of screw type. This is shown as Example 4 in FIG.
FIG. 11 shows the parts corresponding to and with the same reference numerals. The fourth embodiment differs from the third embodiment in that it has a screw-type package electronic component with lead 19 and a mounting screw 20. The cross section of the fourth embodiment is shown in FIG.

【0028】この場合、高周波回路装置の動作時にネジ
止め式のリード付パッケージ型電子部品19で発生した
熱の拡散は、実施例1に上述したように、下方向の場合
は、金属板10の厚さが誘電体基板1や金属製キャリア
2に比べて十分に薄いので、従来の場合とあまり差はな
いが、横方向の場合は金属板10の熱伝導率が大きいた
めに図13のAR13に示すように、金属板10に沿っ
て広範囲にしかも急速に拡散する。なおAR13は電子
部品で発生した熱が単位時間tに金属板10の横方向に
拡散するエリアである。
In this case, the diffusion of heat generated in the screwed package electronic component with lead 19 during the operation of the high frequency circuit device is, as described in the first embodiment, the metal plate 10 in the downward direction. Since the thickness is sufficiently smaller than that of the dielectric substrate 1 and the metal carrier 2, there is not much difference from the conventional case, but in the case of the lateral direction, the thermal conductivity of the metal plate 10 is large, and therefore AR13 of FIG. 13 is used. As shown in FIG. 5, the metal diffuses rapidly along a wide area along the metal plate 10. The AR 13 is an area where heat generated in the electronic component diffuses in the lateral direction of the metal plate 10 in a unit time t.

【0029】これにより、ネジ止め式のリード付パッケ
ージ型電子部品19に熱がこもることはなくなり、安定
な状態でネジ止め式のリード付パッケージ型電子部品1
9が動作し続けることができるようになる。また、金属
板10はその厚さが薄いのでネジ止め用穴を開けること
は容易である。
As a result, heat is not trapped in the screw-fastened package electronic component with lead 19 and the screw-fastened package electronic component 1 with screw is maintained in a stable state.
9 will be able to continue operating. Further, since the metal plate 10 is thin, it is easy to make a screw hole.

【0030】実施例5.実施例2では、高さの低い表面
実装型電子部品を金属製台座の上に乗せる場合について
述べたが、この高さの低い表面実装型電子部品と金属製
台座、それに小型誘電体基板等を用いて小型増幅部を構
成し、それを金属製キャリアに接着する場合にもこの発
明は有効である。
Example 5. In the second embodiment, the case where the surface-mounted electronic component having a low height is placed on the metal pedestal has been described. However, the surface-mounted electronic component having a low height, the metal pedestal, the small dielectric substrate, etc. The present invention is also effective when a small amplifying section is formed by using the small amplifying section and is adhered to a metal carrier.

【0031】これを実施例5として図14に示す。高さ
の低い表面実装型電子部品12と金属製台座13よりも
大きめの金属製台座23、そして小型誘電体基板24で
小型増幅器部を構成していて、それを金属板10上に接
着している。この表面実装型電子部品12と小型誘電体
基板24上のマイクロストリップ線路26と誘電体基板
1上のマイクロストリップ線路4とは導電性リボン25
で接続されている。
This is shown in FIG. 14 as a fifth embodiment. The surface-mounted electronic component 12 having a low height, the metal pedestal 23 which is larger than the metal pedestal 13, and the small dielectric substrate 24 constitute a small amplifier section, which is adhered onto the metal plate 10. There is. The surface mount type electronic component 12, the microstrip line 26 on the small dielectric substrate 24, and the microstrip line 4 on the dielectric substrate 1 are formed of a conductive ribbon 25.
Connected by.

【0032】この場合も実施例2で述べたように、高周
波回路装置の動作時に表面実装型電子部品12で発生し
た熱は、金属製台座23の熱伝導率が大きいので、金属
製台座23にこもることはなく金属板10に伝わり、熱
の拡散も下方向の場合は金属板10の厚さが誘電体基板
1や金属製キャリア2に比べて十分に薄いので従来の場
合とあまり差はないが、横方向の場合は金属板10の熱
伝導率が大きいため、図16のAR14に示すように、
金属板10に沿って広範囲にしかも急速に拡散する。な
おAR14は電子部品で発生した熱が単位時間tに金属
板10の横方向に拡散するエリアである。
Also in this case, as described in the second embodiment, the heat generated in the surface mount type electronic component 12 during the operation of the high frequency circuit device has a large thermal conductivity of the metal pedestal 23, so that the metal pedestal 23 is not affected. In the case where heat is transmitted to the metal plate 10 without being muffled and heat diffusion is in the downward direction, the thickness of the metal plate 10 is sufficiently smaller than that of the dielectric substrate 1 or the metal carrier 2, so there is not much difference from the conventional case. However, in the case of the horizontal direction, the thermal conductivity of the metal plate 10 is large, and therefore, as indicated by AR14 in FIG.
It diffuses widely and rapidly along the metal plate 10. AR14 is an area where heat generated in the electronic component diffuses in the lateral direction of the metal plate 10 in a unit time t.

【0033】これにより、表面実装型電子部品12に熱
がこもることはなくなり、安定な状態で表面実装型電子
部品12が動作し続けることができるようになる。なお
上述した実施例1〜5では、電子部品として増幅器を用
いた場合について述べたが、この発明はこれに限らず、
要は動作時に高熱を発生する電子部品であれば、上述の
実施例と同様の効果を実現できる。
As a result, the surface mount type electronic component 12 is prevented from retaining heat, and the surface mount type electronic component 12 can continue to operate in a stable state. Although the above-described first to fifth embodiments have described the case where the amplifier is used as the electronic component, the present invention is not limited to this.
In short, any electronic component that generates high heat during operation can achieve the same effects as those of the above-described embodiments.

【0034】[0034]

【発明の効果】以上のようにこの発明によれば、誘電体
基板と金属製キャリアとの間に、熱伝導率が大きくかつ
厚さが誘電体基板や金属製キャリアに比べて十分に薄い
金属板を挿入し、その上に発熱の大きい電子部品を実装
することにより、動作時電子部品で発生する熱が、挿入
された金属板に沿って、広範囲にしかも急速に拡散す
る。かくして、電子部品に熱がこもることを未然に防止
し、安定な状態で動作させ得る高周波回路装置を実現で
きる。
As described above, according to the present invention, a metal having a large thermal conductivity and a thickness sufficiently smaller than that of the dielectric substrate or the metal carrier is provided between the dielectric substrate and the metal carrier. By inserting a plate and mounting an electronic component that generates a large amount of heat thereon, the heat generated by the electronic component during operation diffuses rapidly over a wide range along the inserted metal plate. Thus, it is possible to realize a high-frequency circuit device that can prevent heat from being accumulated in the electronic parts and can operate in a stable state.

【0035】さらに次の発明によれば、電子部品の厚さ
が誘電体基板の厚さより薄い場合、金属板上に金属製台
座上を配し、その金属製台座上に電子部品を実装するこ
とにより、動作時電子部品で発生する熱が、金属製台座
を通じて挿入された金属板に沿って、広範囲にしかも急
速に拡散する。かくして、電子部品に熱がこもることを
未然に防止し、安定な状態で動作させ得る高周波回路装
置を実現できる。
Further, according to the next invention, when the thickness of the electronic component is thinner than the thickness of the dielectric substrate, the metal pedestal is placed on the metal plate, and the electronic component is mounted on the metal pedestal. Thus, the heat generated in the electronic component during operation diffuses rapidly over a wide area along the metal plate inserted through the metal pedestal. Thus, it is possible to realize a high-frequency circuit device that can prevent heat from being accumulated in the electronic parts and can operate in a stable state.

【0036】さらに次の発明によれば、誘電体基板の開
口中又は切欠き部に、金属製キャリア上又は金属製台座
を通じて複数の電子部品を実装することにより、動作時
複数の電子部品で発生する熱が、金属製台座を通じて又
は直接挿入された金属板に沿って、広範囲にしかも急速
に拡散する。かくして、複数の電子部品に熱がこもるこ
とを未然に防止し、安定な状態で動作させ得る高周波回
路装置を実現できる。
Further, according to the next invention, a plurality of electronic components are mounted on the metal carrier or through the metal pedestal in the opening or the notch of the dielectric substrate, so that the plurality of electronic components are generated during operation. The heat generated diffuses widely and rapidly through the metal pedestal or along the metal plate directly inserted. Thus, it is possible to realize a high-frequency circuit device that can prevent heat from being accumulated in a plurality of electronic components and can operate in a stable state.

【図面の簡単な説明】[Brief description of drawings]

【図1】 この発明の実施例1による高周波回路装置の
構造を示す略線図である。
FIG. 1 is a schematic diagram showing the structure of a high-frequency circuit device according to a first embodiment of the present invention.

【図2】 この発明の実施例1による高周波回路装置表
面上の増幅器周辺の詳細構成を示す平面図である。
FIG. 2 is a plan view showing a detailed configuration around an amplifier on the surface of the high-frequency circuit device according to the first embodiment of the present invention.

【図3】 図2の断面図である。3 is a cross-sectional view of FIG.

【図4】 実施例1による電子部品で発生した熱が横方
向に拡散する様子を示す略線図である。
FIG. 4 is a schematic diagram showing how heat generated in the electronic component according to the first embodiment diffuses laterally.

【図5】 この発明の実施例2による高周波回路装置表
面上の増幅器周辺の詳細構成を示す平面図である。
FIG. 5 is a plan view showing a detailed configuration around an amplifier on the surface of a high-frequency circuit device according to a second embodiment of the present invention.

【図6】 図5の断面図である。FIG. 6 is a sectional view of FIG.

【図7】 実施例2による電子部品で発生した熱が横方
向に拡散する様子を示す略線図である。
FIG. 7 is a schematic diagram showing how heat generated in an electronic component according to a second embodiment diffuses laterally.

【図8】 この発明の実施例3による高周波回路装置表
面上の増幅器周辺の詳細構成を示す平面図である。
FIG. 8 is a plan view showing a detailed configuration around an amplifier on the surface of a high-frequency circuit device according to a third embodiment of the present invention.

【図9】 図8の断面図である。9 is a cross-sectional view of FIG.

【図10】 実施例3による電子部品で発生した熱が横
方向に拡散する様子を示す略線図である。
FIG. 10 is a schematic diagram showing how heat generated in an electronic component according to a third embodiment diffuses laterally.

【図11】 この発明の実施例4による高周波回路装置
表面上の増幅器周辺の詳細構成を示す平面図である。
FIG. 11 is a plan view showing a detailed configuration around an amplifier on the surface of a high-frequency circuit device according to Embodiment 4 of the present invention.

【図12】 図11の断面図である。FIG. 12 is a sectional view of FIG.

【図13】 実施例4による電子部品で発生した熱が横
方向に拡散する様子を示す略線図である。
FIG. 13 is a schematic diagram showing how heat generated in an electronic component according to a fourth embodiment diffuses laterally.

【図14】 この発明の実施例5による高周波回路装置
表面上の増幅器周辺の詳細構成を示す平面図である。
FIG. 14 is a plan view showing a detailed configuration around an amplifier on the surface of a high-frequency circuit device according to Embodiment 5 of the present invention.

【図15】 図14の断面図である。FIG. 15 is a sectional view of FIG.

【図16】 実施例5による電子部品で発生した熱が横
方向に拡散する様子を示す略線図である。
FIG. 16 is a schematic diagram showing how heat generated in an electronic component according to a fifth embodiment diffuses laterally.

【図17】 従来の高周波回路装置の構造を示す略線図
である。
FIG. 17 is a schematic diagram showing a structure of a conventional high-frequency circuit device.

【図18】 従来の高周波回路装置表面上の増幅器部周
辺の詳細構成を示す平面図である。
FIG. 18 is a plan view showing a detailed configuration around an amplifier section on the surface of a conventional high-frequency circuit device.

【図19】 図18の断面図である。19 is a cross-sectional view of FIG.

【図20】 従来の高周波回路装置における電子部品で
発生した熱が横方向に拡散する様子を示す略線図であ
る。
FIG. 20 is a schematic diagram showing how heat generated in an electronic component in a conventional high-frequency circuit device diffuses laterally.

【図21】 従来の高周波回路装置における電子部品で
発生した熱の下方向の拡散を表した図である。
FIG. 21 is a diagram showing downward diffusion of heat generated in an electronic component in a conventional high frequency circuit device.

【符号の説明】[Explanation of symbols]

1 誘電体基板 2 金属製キャリア 3 リード 4 マイクロストリップ線路 5 表面実装型電子部品 6 導電性ワイヤ 10 金属板 12 表面実装型電子部品 13 金属製台座 16 リード付パッケージ型電子部品 19 ネジ止め式のリード付パッケージ型電子部品 20 ネジ 23 金属製台座 24 小型誘電体基板 25 導電性リボン 26 マイクロストリップ線路 1 Dielectric Substrate 2 Metal Carrier 3 Lead 4 Microstrip Line 5 Surface Mount Electronic Component 6 Conductive Wire 10 Metal Plate 12 Surface Mount Electronic Component 13 Metal Pedestal 16 Leaded Package Electronic Component 19 Screw-type Lead Packaged electronic components 20 Screws 23 Metal pedestal 24 Small dielectric substrate 25 Conductive ribbon 26 Microstrip line

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 表面に整合回路、バイアス回路等が配さ
れ、裏面に接地用導体が配された誘電体基板と、当該誘
電体基板に形成された開口中又は切欠き部に配される発
熱の大きい電子部品と、上記接地用導体を介して上記誘
電体基板を固定する金属製キャリアと、上記誘電体基板
と上記金属製キャリアとの間に介挿され、熱伝導率が大
きくかつ厚さが上記誘電体基板及び上記金属製キャリア
に比して十分に薄い金属板とを備え、上記金属板上に上
記電子部品を実装することを特徴とする高周波回路装
置。
1. A dielectric substrate having a matching circuit, a bias circuit, etc. on its front surface and a grounding conductor on its back surface, and heat generated in an opening or a notch formed in the dielectric substrate. A large electronic component, a metal carrier that fixes the dielectric substrate via the grounding conductor, and a large thermal conductivity and a thickness that are inserted between the dielectric substrate and the metal carrier. Is provided with a metal plate that is sufficiently thinner than the dielectric substrate and the metal carrier, and the electronic component is mounted on the metal plate.
【請求項2】 上記電子部品の形状に応じた金属製台座
を備え、上記電子部品の厚さが上記誘電体基板の厚さよ
り薄い場合、上記金属板上に上記金属製台座上を配し、
当該金属製台座上に上記電子部品を実装することを特徴
とする請求項1に記載の高周波回路装置。
2. A metal pedestal according to the shape of the electronic component is provided, and when the thickness of the electronic component is thinner than the thickness of the dielectric substrate, the metal pedestal is arranged on the metal plate,
The high frequency circuit device according to claim 1, wherein the electronic component is mounted on the metal pedestal.
【請求項3】 上記誘電体基板の開口中又は切欠き部
に、上記金属製キャリア上又は上記金属製台座を通じて
複数の電子部品を実装することを特徴とする高周波回路
装置。
3. A high-frequency circuit device, wherein a plurality of electronic components are mounted on the metal carrier or through the metal pedestal in an opening or a cutout portion of the dielectric substrate.
JP15618295A 1995-06-22 1995-06-22 High frequency circuit device Expired - Fee Related JP3216482B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15618295A JP3216482B2 (en) 1995-06-22 1995-06-22 High frequency circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15618295A JP3216482B2 (en) 1995-06-22 1995-06-22 High frequency circuit device

Publications (2)

Publication Number Publication Date
JPH098432A true JPH098432A (en) 1997-01-10
JP3216482B2 JP3216482B2 (en) 2001-10-09

Family

ID=15622158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15618295A Expired - Fee Related JP3216482B2 (en) 1995-06-22 1995-06-22 High frequency circuit device

Country Status (1)

Country Link
JP (1) JP3216482B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10261847A (en) * 1997-03-19 1998-09-29 Matsushita Electric Ind Co Ltd Heat dissipation board for mounting electronic components
JP2006190711A (en) * 2004-12-28 2006-07-20 Toshiba Corp Semiconductor device
JP2008288379A (en) * 2007-05-17 2008-11-27 Toshiba Corp Semiconductor package
JP2013077765A (en) * 2011-09-30 2013-04-25 Sumitomo Electric Device Innovations Inc Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10261847A (en) * 1997-03-19 1998-09-29 Matsushita Electric Ind Co Ltd Heat dissipation board for mounting electronic components
JP2006190711A (en) * 2004-12-28 2006-07-20 Toshiba Corp Semiconductor device
JP2008288379A (en) * 2007-05-17 2008-11-27 Toshiba Corp Semiconductor package
JP2013077765A (en) * 2011-09-30 2013-04-25 Sumitomo Electric Device Innovations Inc Semiconductor device

Also Published As

Publication number Publication date
JP3216482B2 (en) 2001-10-09

Similar Documents

Publication Publication Date Title
US5457605A (en) Electronic device having coplanar heatsink and electrical contacts
US5050038A (en) Heat sink device or surface mount type component mounted on a printed circuit board
RU2148873C1 (en) Microwave hybrid integrated circuit
JP3051011B2 (en) Power module
US5889319A (en) RF power package with a dual ground
KR100262711B1 (en) High frequency amplifier
US5548487A (en) Flat circuit module mounting using an elastic pad in a depression of a circuit board
EP0878025A1 (en) Semiconductor device with a high-frequency bipolar transistor on an insulating substrate
JPH098432A (en) High-frequency circuit device
JPS6348901A (en) Microwave device
JPS634712B2 (en)
JP3178452B2 (en) Package for semiconductor device and its mounting structure
US5057970A (en) Electronic power component circuit
KR20010021009A (en) Semiconductor device and mounting structure thereof
US5650665A (en) Hybrid integrated circuit device including circuit patterns of different conductivity and circuit elements mounted on an insulating substrate
JP6358415B1 (en) Semiconductor package
JP3182171B2 (en) Optical module
JPH03120851A (en) Semiconductor mounting substrate
JP3048992B2 (en) MMIC module
US12101876B2 (en) Circuit module for mounting high frequency circuit carriers
JP2888204B2 (en) Electronic components
US20050206013A1 (en) Chip module
WO2001015225A1 (en) A combined heat sink/electromagnetic shield
JP2002076178A (en) High frequency circuit device
JPH0462479B2 (en)

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees