JPH0989651A - Thin-film infrared sensor - Google Patents
Thin-film infrared sensorInfo
- Publication number
- JPH0989651A JPH0989651A JP26768295A JP26768295A JPH0989651A JP H0989651 A JPH0989651 A JP H0989651A JP 26768295 A JP26768295 A JP 26768295A JP 26768295 A JP26768295 A JP 26768295A JP H0989651 A JPH0989651 A JP H0989651A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- film
- infrared sensor
- aluminum oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 abstract description 9
- 239000010408 film Substances 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 239000011651 chromium Substances 0.000 abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010931 gold Substances 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052804 chromium Inorganic materials 0.000 abstract description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 239000013078 crystal Substances 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、赤外線検出セン
サなどに組み込まれる薄膜赤外線センサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film infrared sensor incorporated in an infrared detection sensor or the like.
【０００２】[0002]
【従来の技術】従来の薄膜赤外線センサにおいては、そ
の強誘電体薄膜を保持する基板として、シリコン単結晶
基板やＭｇＯ基板が用いられている。2. Description of the Related Art In a conventional thin film infrared sensor, a silicon single crystal substrate or a MgO substrate is used as a substrate for holding the ferroelectric thin film.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、シリコ
ン単結晶基板を用いた場合、その上に堆積される強誘電
体薄膜の結晶性に問題があり、センサの性能（感度）に
影響が及ぼされる。また、ＭｇＯ基板を用いた場合、前
記結晶性は良好であるが、センサとして組み上げる際、
基板の加工が困難である。However, when a silicon single crystal substrate is used, there is a problem with the crystallinity of the ferroelectric thin film deposited on it, which affects the performance (sensitivity) of the sensor. When the MgO substrate is used, the crystallinity is good, but when assembled as a sensor,
It is difficult to process the substrate.
【０００４】そこで、上記の問題を解決するものとし
て、特公平６−８５４５０号公報に示されるように、シ
リコン単結晶基板上にＭｇＯ薄膜を堆積させることが試
みられている。Therefore, as a solution to the above problem, as disclosed in Japanese Patent Publication No. 6-85450, it has been attempted to deposit a MgO thin film on a silicon single crystal substrate.
【０００５】しかしながら、上記公報の技術では、シリ
コン単結晶基板とＭｇＯとにおける熱膨張率の差が大き
いため、膜が剥離しやすいといった不都合がある。However, the technique disclosed in the above publication has a disadvantage that the film is easily peeled off due to a large difference in coefficient of thermal expansion between the silicon single crystal substrate and MgO.
【０００６】この発明は、上述の事柄に留意してなされ
たもので、感度が良好で、しかも、膜が剥離したりせ
ず、基板の加工の容易な薄膜赤外線センサを提供するこ
とを目的としている。The present invention has been made in consideration of the above matters, and an object thereof is to provide a thin-film infrared sensor which has good sensitivity, and is not easily peeled off and the substrate can be easily processed. There is.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するた
め、この発明では、基板の表面に強誘電体薄膜を形成し
てなる薄膜赤外線センサにおいて、前記基板としてシリ
コン基板を用い、このシリコン基板と前記強誘電体薄膜
との間に酸化アルミニウム薄膜を形成している。In order to achieve the above object, according to the present invention, in a thin film infrared sensor having a ferroelectric thin film formed on the surface of a substrate, a silicon substrate is used as the substrate. An aluminum oxide thin film is formed between the thin film and the ferroelectric thin film.
【０００８】上記構成の薄膜赤外線センサにおいては、
シリコン基板と熱膨張率の差が小さく、格子定数が近い
酸化アルミニウム薄膜を形成しているので、この酸化ア
ルミニウム薄膜上における下地電極および強誘電体薄膜
のエピタキシャル成長が可能になり、結晶性の優れた強
誘電体薄膜を、加工しやすいシリコン基板上に形成する
ことができる。したがって、性能の良好な薄膜赤外線セ
ンサを確実に得ることができる。In the thin film infrared sensor having the above structure,
Since an aluminum oxide thin film with a small coefficient of thermal expansion and a close lattice constant to that of a silicon substrate is formed, it becomes possible to epitaxially grow a base electrode and a ferroelectric thin film on this aluminum oxide thin film, and it has excellent crystallinity. The ferroelectric thin film can be formed on a silicon substrate that is easy to process. Therefore, it is possible to reliably obtain a thin-film infrared sensor having good performance.
【０００９】[0009]
【発明の実施の形態】以下、この発明の詳細を、図を参
照しながら説明する。DETAILED DESCRIPTION OF THE INVENTION The details of the present invention will be described below with reference to the drawings.
【００１０】図１〜図３は、この発明の一つの実施の形
態を示すものである。図１は、この発明の薄膜赤外線セ
ンサＳの一例を示すもので、この図において、１はシリ
コン基板で、例えばシリコン（１００）単結晶基板であ
る。このシリコン基板１は、その熱容量を小さくするた
め、下面側がエッチングされている。２はこのシリコン
基板１の上面に形成される酸化アルミニウム薄膜で、例
えばγ−Ａｌ2 Ｏ3 よりなる。３は下地電極で、例えば
白金よりなる。４は強誘電体薄膜である（これについて
は、後に詳しく説明する）。５は上部電極で、例えばク
ロムよりなる。６は赤外吸収膜で、例えば金ブラックよ
りなる。1 to 3 show an embodiment of the present invention. FIG. 1 shows an example of the thin film infrared sensor S of the present invention. In this figure, 1 is a silicon substrate, for example, a silicon (100) single crystal substrate. This silicon substrate 1 is etched on the lower surface side in order to reduce its heat capacity. Reference numeral 2 is an aluminum oxide thin film formed on the upper surface of the silicon substrate 1, and is made of, for example, γ-Al 2 O 3 . A base electrode 3 is made of platinum, for example. Reference numeral 4 is a ferroelectric thin film (this will be described in detail later). An upper electrode 5 is made of chromium, for example. Reference numeral 6 denotes an infrared absorbing film, which is made of gold black, for example.
【００１１】上記薄膜赤外線センサＳの形成方法につい
て、図２および図３を参照しながら説明する。なお、以
下は、複数の薄膜赤外線センサＳを同時に製作する場合
を示している。A method of forming the thin film infrared sensor S will be described with reference to FIGS. The following shows a case where a plurality of thin film infrared sensors S are manufactured at the same time.
【００１２】（１）例えば縦５ｍｍ×横５ｍｍ×厚さ５
００μｍのシリコン（１００）の単結晶基板１を用意
し、このシリコン基板１の上面に、ＣＶＤ法により酸化
アルミニウムをエピタキシャル成長させ、酸化アルミニ
ウム薄膜２を形成し、センサ基板とする〔図２（Ａ）、
図３（Ａ）参照〕。このときの酸化アルミニウム薄膜２
の厚みは、０．１〜１０μｍ程度である。(1) For example, length 5 mm × width 5 mm × thickness 5
A silicon (100) single crystal substrate 1 having a thickness of 00 μm is prepared, and aluminum oxide is epitaxially grown on the upper surface of the silicon substrate 1 by a CVD method to form an aluminum oxide thin film 2 to form a sensor substrate [FIG. 2 (A)]. ,
See FIG. 3A]. Aluminum oxide thin film 2 at this time
Has a thickness of about 0.1 to 10 μm.
【００１３】（２）次に、前記酸化アルミニウム薄膜２
の上面に、スパッタ法によって白金下地電極３をエピタ
キシャル成長させる〔図２（Ｂ）、図３（Ｂ）参照〕。
このとき、適宜のマスクを用いて、白金下地電極３を、
図３（Ｂ）に示すような形状にする。この白金下地電極
３の厚みは、０．１〜０．３μｍ程度である。(2) Next, the aluminum oxide thin film 2
A platinum base electrode 3 is epitaxially grown on the upper surface of the substrate by a sputtering method [see FIGS. 2 (B) and 3 (B)].
At this time, the platinum base electrode 3 is
The shape is as shown in FIG. The platinum base electrode 3 has a thickness of about 0.1 to 0.3 μm.
【００１４】（３）次いで、減圧ＣＶＤ法によって、強
誘電体薄膜として、その組成がＰｂx Ｌａy Ｔｉz Ｚｒ
w Ｏ3 として表されるＰＺＴ系薄膜４をエピタキシャル
成長させる。そして、この実施の形態では、特に、ｘ＝
１、ｙ＝０、０≦ｚ≦０．５２、ｚ＋ｗ＝１とし、ＰＺ
Ｔ薄膜４とする。(3) Next, by a low pressure CVD method, a ferroelectric thin film having a composition of Pb x La y Ti z Zr is formed.
The PZT-based thin film 4 is expressed as w O 3 is epitaxially grown. And in this embodiment, in particular, x =
1, y = 0, 0 ≦ z ≦ 0.52, z + w = 1, and PZ
This is T thin film 4.
【００１５】ここで用いる減圧ＣＶＤ法は、各ソース原
料（この場合、Ｐｂソース、Ｚｒソース、ＴｉＯ2 ソー
ス）をそれぞれ個別に制御できるので、酸化アルミニウ
ム薄膜２および白金下地電極３のそれぞれ表面に、Ｐｂ
Ｏ、ＺｒＯ2 、ＴｉＯ2 を同時に析出させ、ＰＺＴ薄膜
４を厚さ２〜５μｍ程度に堆積させる〔図２（Ｃ）、図
３（Ｃ）参照〕。このとき、適宜のマスクを用いて、Ｐ
ＺＴ薄膜４を、図３（Ｂ）に示すような形状にする。In the low pressure CVD method used here, each source material (in this case, Pb source, Zr source, TiO 2 source) can be controlled individually, so that the aluminum oxide thin film 2 and the platinum base electrode 3 have their respective surfaces. Pb
O, ZrO 2 , and TiO 2 are simultaneously deposited, and the PZT thin film 4 is deposited to a thickness of about 2 to 5 μm (see FIGS. 2C and 3C). At this time, using an appropriate mask, P
The ZT thin film 4 is shaped as shown in FIG.
【００１６】（４）そして、前記ＰＺＴ薄膜４の上面お
よび酸化アルミニウム薄膜２の上面に、Ｃｒなどの透過
性導電性金属材料を蒸着することにより、上部電極５を
形成する〔図２（Ｄ）、図３（Ｄ）参照〕。(4) Then, a transparent conductive metal material such as Cr is deposited on the upper surface of the PZT thin film 4 and the upper surface of the aluminum oxide thin film 2 to form the upper electrode 5 [FIG. 2 (D)]. , FIG. 3D].
【００１７】（５）さらに、金ブラックを真空蒸着する
ことにより、上部電極５の最上部に赤外吸収膜６を形成
する〔図２（Ｅ）、図３（Ｅ）参照〕。(5) Further, gold black is vacuum-deposited to form the infrared absorption film 6 on the uppermost part of the upper electrode 5 [see FIGS. 2 (E) and 3 (E)].
【００１８】（６）そして、シリコン基板１の下面を所
定形状になるようにエッチング処理して除去する〔図２
（Ｆ）参照〕。このシリコン基板１のエッチングは、例
えば異方性エッチングによって行うことができる。な
お、図１および図２（Ｆ）において、符号７は前記エッ
チングによって除去された部分を示している。(6) Then, the lower surface of the silicon substrate 1 is etched so as to have a predetermined shape and removed [FIG.
(F)]. The etching of the silicon substrate 1 can be performed by, for example, anisotropic etching. 1 and 2 (F), reference numeral 7 indicates a portion removed by the etching.
【００１９】（７）上述のようにして、一つのシリコン
基板１上に複数（図示例では、３つ）の薄膜赤外線セン
サＳが得られる。これをダイシングすることにより、個
々のセンサチップに分割する〔図３（Ｆ）参照〕ことに
より、図１に示したような薄膜赤外線センサＳとなる。(7) As described above, a plurality (three in the illustrated example) of thin film infrared sensors S are obtained on one silicon substrate 1. By dicing this into individual sensor chips [see FIG. 3 (F)], the thin film infrared sensor S as shown in FIG. 1 is obtained.
【００２０】なお、前記の（６）と（７）の工程は入れ
替えてもよい。The steps (6) and (7) may be interchanged.
【００２１】上述のようにして形成された薄膜赤外線セ
ンサＳは、シリコン基板１上に、このシリコン基板１と
熱膨張率の差が小さく、格子定数が近い酸化アルミニウ
ム薄膜２を形成しているので、この酸化アルミニウム薄
膜２がバッファ層となる。そして、酸化アルミニウム薄
膜２上における下地電極３および強誘電体薄膜４のエピ
タキシャル成長が可能になり、結晶性の優れた下地電極
３および強誘電体薄膜４を形成することができ、強誘電
体薄膜４がシリコン基板１から剥離することがなくな
る。The thin-film infrared sensor S formed as described above has the aluminum oxide thin film 2 formed on the silicon substrate 1 having a small coefficient of thermal expansion and a close lattice constant to the silicon substrate 1. The aluminum oxide thin film 2 serves as a buffer layer. Then, the underlying electrode 3 and the ferroelectric thin film 4 can be epitaxially grown on the aluminum oxide thin film 2, the underlying electrode 3 and the ferroelectric thin film 4 having excellent crystallinity can be formed, and the ferroelectric thin film 4 can be formed. Will not be separated from the silicon substrate 1.
【００２２】そして、前記シリコン基板１および酸化ア
ルミニウム薄膜２は加工が容易であるから、感度の良好
な薄膜赤外線センサＳを容易にしかも大量生産すること
ができる。したがって、優れた性能を有する薄膜赤外線
センサＳを安価に得ることができる。Since the silicon substrate 1 and the aluminum oxide thin film 2 are easily processed, the thin film infrared sensor S having good sensitivity can be easily mass-produced. Therefore, the thin film infrared sensor S having excellent performance can be obtained at low cost.
【００２３】この発明は、上述した実施の形態に限られ
るものではなく、例えば、強誘電体薄膜４は、前記ＰＺ
Ｔ薄膜に限られるものではなく、組成がＰｂx Ｌａy Ｔ
ｉzＺｒw Ｏ3 として表され、ｘ＋ｙ＝１、０≦ｙ≦
０．２５、ｚ＋ｗ＝１、０≦ｗ≦０．５２であるＰＬＺ
Ｔ薄膜でもよい。The present invention is not limited to the above-mentioned embodiment, and, for example, the ferroelectric thin film 4 is formed of the PZ.
The composition is not limited to the T thin film, and the composition is Pb x La y T
expressed as i z Zr w O 3 , where x + y = 1, 0 ≦ y ≦
PLZ of 0.25, z + w = 1, 0 ≦ w ≦ 0.52
It may be a T thin film.
【００２４】[0024]
【発明の効果】以上説明したように、この発明において
は、シリコン基板の一方の面に酸化アルミニウム薄膜を
形成し、この酸化アルミニウム薄膜の上面に強誘電体薄
膜を形成しているので、従来に比べて性能が優れた薄膜
赤外線センサを容易かつ安価に得ることができるように
なった。As described above, according to the present invention, the aluminum oxide thin film is formed on one surface of the silicon substrate, and the ferroelectric thin film is formed on the upper surface of the aluminum oxide thin film. Compared with this, it has become possible to easily and inexpensively obtain a thin film infrared sensor having excellent performance.
【図１】この発明の一つの実施の形態における薄膜赤外
線センサの断面形状を示す図である。FIG. 1 is a diagram showing a cross-sectional shape of a thin film infrared sensor according to an embodiment of the present invention.
【図２】前記薄膜赤外線センサの作成手順の一例を示す
断面図である。FIG. 2 is a cross-sectional view showing an example of a procedure for producing the thin film infrared sensor.
【図３】前記薄膜赤外線センサの作成手順の一例を示す
上面図である。FIG. 3 is a top view showing an example of a procedure for producing the thin film infrared sensor.
１…シリコン基板、２…酸化アルミニウム薄膜、４…強
誘電体薄膜、Ｓ…薄膜赤外線センサ。1 ... Silicon substrate, 2 ... Aluminum oxide thin film, 4 ... Ferroelectric thin film, S ... Thin film infrared sensor.
フロントページの続き (72)発明者 野村 聡 京都府京都市南区吉祥院宮の東町２番地 株式会社堀場製作所内 (72)発明者 富永 浩二 京都府京都市南区吉祥院宮の東町２番地 株式会社堀場製作所内 (72)発明者 田辺 裕貴 京都府京都市南区吉祥院宮の東町２番地 株式会社堀場製作所内Front page continuation (72) Inventor Satoshi Nomura 2 Higashi-cho, Kichijoin-miya, Minami-ku, Kyoto-shi, Horiba Manufacturing Co., Ltd. In-house (72) Inventor Yuki Tanabe 2 Higashi-cho, Kichijoin-miya, Minami-ku, Kyoto-shi, Kyoto Inside HORIBA, Ltd.
Claims (1)
る薄膜赤外線センサにおいて、前記基板としてシリコン
基板を用い、このシリコン基板と前記強誘電体薄膜との
間に酸化アルミニウム薄膜を形成したことを特徴とする
薄膜赤外線センサ。1. A thin film infrared sensor comprising a ferroelectric thin film formed on the surface of a substrate, wherein a silicon substrate is used as the substrate, and an aluminum oxide thin film is formed between the silicon substrate and the ferroelectric thin film. A thin-film infrared sensor characterized in that
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26768295A JP3482048B2 (en) | 1995-09-20 | 1995-09-20 | Thin film infrared sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26768295A JP3482048B2 (en) | 1995-09-20 | 1995-09-20 | Thin film infrared sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0989651A true JPH0989651A (en) | 1997-04-04 |
| JP3482048B2 JP3482048B2 (en) | 2003-12-22 |
Family
ID=17448073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26768295A Expired - Fee Related JP3482048B2 (en) | 1995-09-20 | 1995-09-20 | Thin film infrared sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3482048B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100310112B1 (en) * | 1998-12-28 | 2001-12-17 | 배성호 | Manufacturing method of light receiving electrode for pyroelectric element |
| JP2002261249A (en) * | 2001-03-01 | 2002-09-13 | Makoto Ishida | Semiconductor storage element |
| WO2004084322A1 (en) * | 2003-03-17 | 2004-09-30 | Japan Science And Technology Agency | Semiconductor element, semiconductor sensor and semiconductor memory element |
| WO2006132161A1 (en) * | 2005-06-04 | 2006-12-14 | National University Corporation Toyohashi University Of Technology | Integrated device |
| JP2009198700A (en) * | 2008-02-20 | 2009-09-03 | Nidek Co Ltd | Method for manufacturing mirror of variable shape and mirror of variable shape |
-
1995
- 1995-09-20 JP JP26768295A patent/JP3482048B2/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100310112B1 (en) * | 1998-12-28 | 2001-12-17 | 배성호 | Manufacturing method of light receiving electrode for pyroelectric element |
| JP2002261249A (en) * | 2001-03-01 | 2002-09-13 | Makoto Ishida | Semiconductor storage element |
| WO2004084322A1 (en) * | 2003-03-17 | 2004-09-30 | Japan Science And Technology Agency | Semiconductor element, semiconductor sensor and semiconductor memory element |
| JP2004281742A (en) * | 2003-03-17 | 2004-10-07 | Japan Science & Technology Agency | Semiconductor device, semiconductor sensor and semiconductor storage device |
| KR100738852B1 (en) * | 2003-03-17 | 2007-07-12 | 도쿠리쓰교세이호징 가가쿠 기주쓰 신코 기코 | Semiconductor Memory Devices and Ultrasonic Sensors |
| US7692257B2 (en) | 2003-03-17 | 2010-04-06 | National University Corporation Toyohashi University Of Technology | Ultrasonic sensor comprising a metal/ferroelectric/metal/insulator/semiconductor structure |
| WO2006132161A1 (en) * | 2005-06-04 | 2006-12-14 | National University Corporation Toyohashi University Of Technology | Integrated device |
| JP5002815B2 (en) * | 2005-06-04 | 2012-08-15 | 国立大学法人豊橋技術科学大学 | Integrated device and manufacturing method thereof |
| JP2009198700A (en) * | 2008-02-20 | 2009-09-03 | Nidek Co Ltd | Method for manufacturing mirror of variable shape and mirror of variable shape |
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| JP3482048B2 (en) | 2003-12-22 |
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