JPH10115550A - Optical detector and solid-state image sensing device - Google Patents
Optical detector and solid-state image sensing deviceInfo
- Publication number
- JPH10115550A JPH10115550A JP9217553A JP21755397A JPH10115550A JP H10115550 A JPH10115550 A JP H10115550A JP 9217553 A JP9217553 A JP 9217553A JP 21755397 A JP21755397 A JP 21755397A JP H10115550 A JPH10115550 A JP H10115550A
- Authority
- JP
- Japan
- Prior art keywords
- signal
- light
- dark current
- terminal
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 63
- 230000010354 integration Effects 0.000 claims description 62
- 230000005540 biological transmission Effects 0.000 claims description 23
- 239000003990 capacitor Substances 0.000 claims description 16
- 230000005669 field effect Effects 0.000 claims description 13
- 230000000903 blocking effect Effects 0.000 claims description 11
- 230000008030 elimination Effects 0.000 claims description 9
- 238000003379 elimination reaction Methods 0.000 claims description 9
- 238000003384 imaging method Methods 0.000 claims description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 238000007796 conventional method Methods 0.000 description 8
- 238000001816 cooling Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、測定対象光の強度
を測定する光検出装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photodetector for measuring the intensity of light to be measured.
【0002】[0002]
【従来の技術】測定対象光の強度測定には、測定対象光
の受光量に応じた電荷が生じ、電流信号として出力する
フォトダイオードなどの半導体受光素子が多用されてい
る。こうした受光素子を使用して、精度良く受光量を測
定するにあたって、受光素子の暗電流が常に問題とな
り、受光素子の種類に応じた暗電流の低減あるいは除去
の方式が提案されている。2. Description of the Related Art For measuring the intensity of light to be measured, a semiconductor light receiving element such as a photodiode which generates a charge corresponding to the amount of received light of the light to be measured and outputs it as a current signal is frequently used. In measuring the amount of received light with high accuracy using such a light receiving element, the dark current of the light receiving element always poses a problem, and a method of reducing or removing the dark current according to the type of the light receiving element has been proposed.
【0003】提案されている方式としては、暗電流は、
受光素子の動作温度を低くすると低減されることに着目
して、受光素子の冷却を図る方式がある(以後、従来法
1と呼ぶ)。また、光チョッパを使用し、測定対象光が
遮断された状態での受光素子から出力電流を暗電流とし
て評価し、測定対象光の透過状態での受光素子の出力電
流から評価暗電流を差し引き、測定対象光の強度に応じ
た電流信号を得る方式がある(以後、従来法2と呼
ぶ)。[0003] As a proposed method, the dark current is
There is a method of cooling the light receiving element by paying attention to the fact that it is reduced when the operating temperature of the light receiving element is lowered (hereinafter referred to as conventional method 1). Also, using an optical chopper, the output current from the light receiving element in a state where the light to be measured is cut off is evaluated as a dark current, and the evaluation dark current is subtracted from the output current of the light receiving element in a transmission state of the light to be measured, There is a method of obtaining a current signal corresponding to the intensity of the light to be measured (hereinafter, referred to as Conventional Method 2).
【0004】そして、従来法1と従来法2とを組合せた
装置(以下、従来例と呼ぶ)が、特開昭61−2550
60号公報に開示されている。An apparatus combining the conventional method 1 and the conventional method 2 (hereinafter referred to as a conventional example) is disclosed in Japanese Patent Laid-Open No. 61-2550.
No. 60 is disclosed.
【0005】[0005]
【発明が解決しようとする課題】従来の光検出装置で
は、以上のような方式で暗電流成分の低減を図っている
ので、以下のような問題点があった。In the conventional photodetector, the dark current component is reduced by the above-described method, and therefore, has the following problems.
【0006】従来法1では、受光素子の冷却を行うため
に冷却部を備える必要があるので、光検出装置が大規模
なものとなってしまう。更に、冷却によっての暗電流の
低減では、測定対象光が微弱な場合には、充分なSN比
を確保できないことが多くの場合で発生する。In the first conventional method, it is necessary to provide a cooling unit for cooling the light receiving element, so that the photodetector becomes large-scale. Furthermore, when the dark current is reduced by cooling, it often occurs that a sufficient SN ratio cannot be secured when the light to be measured is weak.
【0007】従来法2では、測定対象光の受光によって
発生する電流量(以後、信号電流量とも呼ぶ)と暗電流
量とが同程度の場合にはある程度のSN比を確保可能で
あるが、信号電流量が暗電流量よりも圧倒的に少ない、
例えばInGaAsフォトダイオードの場合には、良好
なSN比の確保が不可能である。In the conventional method 2, a certain SN ratio can be secured when the amount of current generated by the reception of the light to be measured (hereinafter also referred to as a signal current amount) and the amount of dark current are substantially the same. The signal current amount is overwhelmingly smaller than the dark current amount,
For example, in the case of an InGaAs photodiode, it is impossible to secure a good SN ratio.
【0008】したがって、従来法1と従来法2との双方
を採用した従来例の装置であっても、冷却後の受光素子
からの電流信号の大部分を暗電流成分が占める場合に
は、精度の良い測定は困難であった。Accordingly, even in the conventional apparatus employing both the conventional method 1 and the conventional method 2, if the dark current component occupies most of the current signal from the light receiving element after cooling, the accuracy is low. Good measurement was difficult.
【0009】本発明は、上記を鑑みてなされたものであ
り、受光素子の出力電流の大部分を暗電流成分が占める
場合であっても、良好なSN比を確保可能な光検出装置
を提供することを目的とする。The present invention has been made in view of the above, and provides a photodetector capable of securing a good SN ratio even when a dark current component occupies most of the output current of a light receiving element. The purpose is to do.
【0010】また、本発明は、画素に相当する受光素子
の出力電流の大部分を暗電流成分が占める場合であって
も、良好なSN比を確保して入射光像を撮像可能な固体
撮像装置を提供することを目的とする。Also, the present invention provides a solid-state imaging device capable of securing an excellent S / N ratio and capturing an incident light image even when a dark current component occupies most of the output current of a light receiving element corresponding to a pixel. It is intended to provide a device.
【0011】[0011]
【課題を解決するための手段】請求項1の光検出装置
は、(a)周期的に測定対象光の透過と遮断とを制御す
る光遮断制御部と、(b)測定対象光の強度に応じた電
荷を発生し、電流信号として出力する光電変換素子と、
(c)光電変換素子から出力された電流信号を入力し、
積分指示信号に応じて、入出力端子間に接続された第1
の容量素子に積分する積分回路と、(d)測定対象光の
遮断時に光電変換素子から出力された暗電流信号を入力
し、暗電流の略平均値を求めるとともに、暗電流除去指
示信号に応じて、積分回路に入力する電流信号から暗電
流の略平均値を除去する暗電流除去回路と、(e)積分
回路からの出力信号を入力し、減算指示信号に応じて、
測定対象光の遮断時の所定時間にわたって暗電流の略平
均値が除去された暗電流信号を積分回路で積分した後の
前記積分回路の出力信号の第1の値を保持するととも
に、測定対象光の透過時の所定時間にわたって暗電流の
略平均値が除去された光電変換素子からの電流信号を前
記積分回路で積分した後の前記積分回路の出力信号の第
2の値と前記第1の値との差に応じた信号を出力する差
分演算回路と、(f)光遮断制御部から出力された光透
過状態表示信号を入力し、光透過状態表示信号の変化に
同期して、積分指示信号、暗電流除去指示信号、およ
び、減算指示信号を出力するタイミング発生回路とを備
えることを特徴とする。According to a first aspect of the present invention, there is provided a photodetecting device comprising: (a) a light blocking control section for periodically controlling transmission and blocking of light to be measured; A photoelectric conversion element that generates a corresponding charge and outputs the signal as a current signal;
(C) receiving a current signal output from the photoelectric conversion element,
A first terminal connected between the input and output terminals according to the integration instruction signal.
And (d) receiving a dark current signal output from the photoelectric conversion element when the light to be measured is cut off, obtaining a substantially average value of the dark current, and responding to the dark current removal instruction signal. A dark current removing circuit that removes a substantially average value of a dark current from a current signal input to the integrating circuit; and (e) an output signal from the integrating circuit is input, and according to a subtraction instruction signal,
A first value of the output signal of the integration circuit after the integration of the dark current signal from which the approximately average value of the dark current has been removed for a predetermined time when the light to be measured is cut off, The second value and the first value of the output signal of the integration circuit after the integration circuit integrates the current signal from the photoelectric conversion element from which the approximately average value of the dark current has been removed for a predetermined time during transmission And (f) a light transmission state display signal output from the light blocking control unit, and an integration instruction signal in synchronization with a change in the light transmission state display signal. And a timing generation circuit for outputting a dark current removal instruction signal and a subtraction instruction signal.
【0012】請求項1の光検出装置では、光チョッパな
どの光遮断制御部が動作して、光遮断状態と光透過状態
とを交互かつ周期的に発生させる。そして、光遮断制御
部は、光遮断状態で非有意となり、光透過状態で有意と
なる光透過状態表示信号をタイミング発生回路へ向けて
出力する。In the light detecting device according to the first aspect, a light blocking control unit such as a light chopper operates to alternately and periodically generate a light blocking state and a light transmitting state. Then, the light-blocking control unit outputs a light-transmitting-state indication signal that becomes insignificant in the light-blocking state and significant in the light-transmitting state to the timing generation circuit.
【0013】光透過状態表示信号が有意から非有意へ変
化すると、タイミング発生回路は、積分指示信号を非有
意として、積分回路を非積分モードで動作させ、かつ、
暗電流除去指示信号を非有意として、光電変換素子から
出力された暗電流信号を暗電流除去回路に入力する。暗
電流除去回路は、入力した暗電流信号と非積分動作時の
積分回路からの出力信号とに基づいて、暗電流除去指示
信号が有意となるまでの暗電流信号の略平均値を求め
る。When the light transmission state indicating signal changes from significant to insignificant, the timing generation circuit sets the integration instruction signal to insignificant, operates the integration circuit in the non-integration mode, and
The dark current removal instruction signal is made insignificant, and the dark current signal output from the photoelectric conversion element is input to the dark current removal circuit. The dark current elimination circuit obtains a substantially average value of the dark current signal until the dark current elimination instruction signal becomes significant based on the input dark current signal and the output signal from the integration circuit during the non-integration operation.
【0014】次に、暗電流除去指示信号を有意として、
積分回路の電流信号入力端子に流入してくる電流信号か
ら、暗電流除去回路が、求めた暗電流の略平均値を継続
的に除去する。Next, the dark current removal instruction signal is made significant,
From the current signal flowing into the current signal input terminal of the integrating circuit, the dark current removing circuit continuously removes the approximate average value of the obtained dark current.
【0015】この状態で、積分指示信号を有意として、
光電変換素子から出力された電流信号から暗電流の略平
均値が除去された電流信号を、所定時間にわたって積分
回路に入力して積分し、電荷を第1の容量素子に蓄積す
る。所定時間経過後、減算指示信号を一時的に有意と
し、その時点における積分回路の積分結果を、差分演算
回路に保持する。In this state, the integration instruction signal is made significant, and
A current signal obtained by removing a substantially average value of a dark current from the current signal output from the photoelectric conversion element is input to an integration circuit for a predetermined time, integrated, and charge is accumulated in the first capacitor. After a lapse of a predetermined time, the subtraction instruction signal is temporarily made significant, and the integration result of the integration circuit at that time is held in the difference calculation circuit.
【0016】この後、光透過状態表示信号が非有意から
有意へ変化すると、第1の容量素子に蓄積された電荷を
リセットするとともに、光検出指示信号を有意として、
光電変換素子の電流信号出力端子を積分回路の電流入力
端子に接続する。そして、光電変換素子から出力された
電流信号から暗電流の略平均値が除去された電流信号
を、所定時間にわたって積分回路に入力して積分し、電
荷を第1の容量素子に蓄積する。所定時間経過後、減算
指示信号を一時的に有意とし、その時点における積分回
路の積分結果を、差分演算回路に通知する。Thereafter, when the light transmission state display signal changes from insignificant to significant, the electric charge stored in the first capacitance element is reset, and the light detection instruction signal is made significant.
The current signal output terminal of the photoelectric conversion element is connected to the current input terminal of the integration circuit. Then, the current signal obtained by removing the substantially average value of the dark current from the current signal output from the photoelectric conversion element is input to the integration circuit for a predetermined time and integrated, and the electric charge is accumulated in the first capacitor. After a lapse of a predetermined time, the subtraction instruction signal is temporarily made significant, and the integration result of the integration circuit at that time is notified to the difference calculation circuit.
【0017】この通知を受けた差分演算回路は、以前に
保持していた暗電流成分のみに応じた積分結果と、今回
通知された、信号成分と暗電流成分との和に応じた積分
結果との差分を演算して出力する。Upon receiving the notification, the difference calculation circuit calculates the integration result corresponding to only the previously held dark current component and the integration result corresponding to the sum of the signal component and the dark current component notified this time. Is calculated and output.
【0018】こうして、請求項1の光検出装置では、光
電変換素子からの出力電流信号の大部分が暗電流成分で
あっても、まず、暗電流成分の大半を、時間的に近接し
た時点で求めた、暗電流の略平均値を除去することによ
って、暗電流成分と信号電流成分との割合を改善した
後、更に、残った暗電流成分を更に時間的に近接した時
点で求めた推定残留暗電流成分を差し引くことにより、
信号成分を抽出するので、良好なSN比を確保して信号
成分を抽出する。こうして抽出された信号成分を計測す
ることにより、精度良く測定対象光の受光強度を測定す
る。Thus, in the photodetector according to the first aspect, even if most of the output current signal from the photoelectric conversion element is a dark current component, first, most of the dark current component is detected at a point in time that is close in time. After removing the approximate average value of the obtained dark current, the ratio between the dark current component and the signal current component is improved, and the remaining residual dark current component is further estimated at a time closer in time. By subtracting the dark current component,
Since the signal component is extracted, a good SN ratio is secured and the signal component is extracted. By measuring the signal components extracted in this way, the received light intensity of the light to be measured is accurately measured.
【0019】請求項2の光検出装置は、請求項1の光検
出装置において、(i)光電変換素子は、カソード端子
が基準電位に設定されたフォトダイオードであり、(i
i)積分回路は、光電変換素子から出力された電流信号
を入力する負入力端子と、基準電位に設定された正入力
端子とを有する演算増幅器を備えることを特徴とする。According to a second aspect of the present invention, there is provided the photodetector according to the first aspect, wherein (i) the photoelectric conversion element is a photodiode having a cathode terminal set to a reference potential;
i) The integration circuit includes an operational amplifier having a negative input terminal for inputting a current signal output from the photoelectric conversion element and a positive input terminal set to a reference potential.
【0020】光電変換素子であるフォトダイオードで発
生する暗電流は、カソード端子とアノード端子との間に
印加されるバイアス電圧が大きい程、大きなものとな
る。The dark current generated by the photodiode, which is a photoelectric conversion element, increases as the bias voltage applied between the cathode terminal and the anode terminal increases.
【0021】請求項2の光検出装置では、光電変換素子
であるフォトダイオードのカソード端子が基準電位に設
定されるとともに、電流信号出力端子であるアノード端
子は、基準電位とイマジナリショート状態にある積分回
路の演算増幅器の負入力端子に接続されるので、カソー
ド端子とアノード端子との間に印加されるバイアス電圧
をほぼ極限まで低減できる。したがって、発生する暗電
流の絶対量が低減される。この結果、抽出される信号成
分のSN比が向上する。According to a second aspect of the present invention, a cathode terminal of a photodiode serving as a photoelectric conversion element is set to a reference potential, and an anode terminal serving as a current signal output terminal is integrated with the reference potential in an imaginary short state. Since it is connected to the negative input terminal of the operational amplifier of the circuit, the bias voltage applied between the cathode terminal and the anode terminal can be reduced to the limit. Therefore, the absolute amount of the generated dark current is reduced. As a result, the SN ratio of the extracted signal component is improved.
【0022】請求項3の光検出装置は、請求項1の光検
出装置において、暗電流除去回路が、(i)積分回路の
電流信号の入力端子にソース端子が接続されるととも
に、ドレイ ン端子が基準電位に設定された電界効果ト
ランジスタと、(ii)電界効果トランジスタのゲート端
子が第1の端子に接続されるとともに、第2の端子が基
準電位に設定された第2の容量素子と、(iii)電界効
果トランジスタのゲート端子が 第1の端子に接続され
るとともに、第2の端子が積分回路の出力端子に接続さ
れ、暗電流除去指示信号に応じて開閉するスイッチ素子
とを備えることを特徴とする。According to a third aspect of the present invention, in the photodetector of the first aspect, the dark current elimination circuit includes: (i) a source terminal connected to a current signal input terminal of the integration circuit; And (ii) a second capacitance element having a gate terminal connected to the first terminal and a second terminal set to the reference potential, (Iii) a switching element that has a gate terminal of the field effect transistor connected to the first terminal, a second terminal connected to the output terminal of the integration circuit, and that opens and closes in response to a dark current removal instruction signal. It is characterized by.
【0023】請求項3の光検出装置では、暗電流の略平
均値にあたって、光遮断状態での光電変換素子からの暗
電流信号を電界効果トランジスタのソース端子に入力す
るとともに、暗電流除去指示信号が非有意とした場合に
閉じるスイッチ素子を介して、非積分動作時の積分回路
の出力信号を電界効果トランジスタのゲート端子と第2
の容量素子の第1の端子に入力する。この結果、暗電流
除去指示信号が非有意とした期間での光電変換素子から
の暗電流信号の略平均値に応じた量の電位が第2の容量
素子の第1の端子、すなわち、電界効果トランジスタの
ゲート端子に発生し、この電位に応じた電流が電界効果
トランジスタを介して、積分回路の電流信号入力端子に
流入する電流信号から除去される。According to a third aspect of the present invention, a dark current signal from the photoelectric conversion element in a light-blocking state is input to the source terminal of the field-effect transistor and a dark current removal instruction signal is obtained based on the approximate average value of the dark current. The signal output from the integrating circuit during the non-integrating operation is connected to the gate terminal of the field effect transistor and the second
To the first terminal of the capacitive element. As a result, the potential of the amount corresponding to the substantially average value of the dark current signal from the photoelectric conversion element during the period in which the dark current removal instruction signal is insignificant is applied to the first terminal of the second capacitor, that is, the electric field effect. A current generated at the gate terminal of the transistor and corresponding to this potential is removed from the current signal flowing into the current signal input terminal of the integrating circuit via the field effect transistor.
【0024】また、暗電流除去指示信号を有意とする
と、それ以前の光電変換素子からの暗電流信号の略平均
値に応じた電位値が第2の容量素子の第1の端子に保持
される。したがって、暗電流除去指示信号が有意の状態
では、以前の暗電流除去指示信号が非有意の状態での暗
電流の略平均値が、継続して積分回路の電流信号入力端
子に流入する電流信号から除去される。If the dark current removal instruction signal is significant, a potential value corresponding to a substantially average value of the dark current signal from the photoelectric conversion element before that is held at the first terminal of the second capacitor. . Therefore, when the dark current elimination instruction signal is significant, the substantially average value of the dark current when the previous dark current elimination instruction signal is insignificant is the current signal that continuously flows into the current signal input terminal of the integration circuit. Removed from
【0025】請求項4の光検出装置は、測定対象光が赤
外線であり、光電変換素子がInGaAsからなるフォ
トダイオードであることを特徴とする。According to a fourth aspect of the present invention, the light to be measured is infrared light and the photoelectric conversion element is a photodiode made of InGaAs.
【0026】光電変換素子が赤外線に感度を有するIn
GaAsからなるフォトダイオードでは、出力電流信号
の大部分が暗電流成分である。したがって、請求項1の
光検出装置の構成とすることが特に好適である。The photoelectric conversion element has an infrared sensitivity.
In a photodiode made of GaAs, most of the output current signal is a dark current component. Therefore, it is particularly preferable to adopt the configuration of the photodetector of the first aspect.
【0027】請求項5の固体撮像装置は、請求項1の光
検出装置を1次元状または2次元状に配列したことを特
徴とする。According to a fifth aspect of the present invention, there is provided a solid-state imaging device, wherein the photodetectors of the first aspect are arranged one-dimensionally or two-dimensionally.
【0028】請求項5の固体撮像装置では、1次元また
は2次元に配列する画素に応じた光検出装置を請求項1
の光検出装置で構成するので、各画素について良好なS
N比を確保して、好適な入力像の撮像を実行する。According to a fifth aspect of the present invention, there is provided a solid-state imaging device, wherein a photodetector corresponding to pixels arranged one-dimensionally or two-dimensionally is provided.
, And a good S value is obtained for each pixel.
A suitable input image is captured with the N ratio secured.
【0029】[0029]
【実施の形態】以下、図面を参照しながら、本発明の光
検出装置および固体撮像装置の実施形態を説明する。な
お、図面の説明にあたっては、同一の要素には同一の符
号を付し、重複する説明を省略する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a photodetector and a solid-state imaging device according to the present invention will be described below with reference to the drawings. In the description of the drawings, the same elements will be denoted by the same reference symbols, without redundant description.
【0030】図1は、本発明の光検出装置の一実施形態
の構成図である。図1に示すように、この光検出装置
は、(a)周期的に測定対象光の透過と遮断とを制御す
る光遮断制御部200と、(b)光遮断制御部200を
介して入射した測定対象光の強度に応じた電荷を発生
し、電流信号として出力するフォトダイオードである光
電変換素子100と、(c)光電変換素子100から出
力された信号を入力し、積分指示信号SMに応じて、入
出力端子間に接続された容量素子310に積分するとと
もに、リセット指示信号R1に応じて容量素子310に
蓄積された電荷を放出する積分回路300と、(d)測
定対象光の遮断時に光電変換素子100から出力された
暗電流信号を入力し、暗電流の略平均値を求めるととも
に、暗電流除去指示信号RMに応じて、積分回路300
に入力する電流信号から暗電流の略平均値を除去する暗
電流除去回路400と、(e)積分回路300からの出
力信号を入力し、減算指示信号SBに応じて、測定対象
光の遮断状態における所定時間Tにわたって暗電流の略
平均値が除去された暗電流信号を積分回路300で積分
した後の積分回路300の出力信号の値V1を保持し、
測定対象光の透過状態における所定時間Tにわたって暗
電流の略平均値が除去された光電変換素子100からの
電流信号を積分回路300で積分した後の前記積分回路
300の出力信号の値V2と値V1との差に応じた信号
を出力するとともに、リセット指示信号R2に応じて保
持値をリセットする差分演算回路500と、(f)光遮
断制御部200から出力された光透過状態表示信号TR
を入力し、光透過状態表示信号TRに同期して、積分指
示信号SM、リセット指示信号R1、暗電流除去指示信
号RM、減算指示信号SB、および、リセット指示信号
R2を出力するタイミング発生回路600とを備える。FIG. 1 is a configuration diagram of an embodiment of the photodetector of the present invention. As shown in FIG. 1, the light detection device (a) periodically enters through the light cutoff control unit 200 and (b) the light cutoff control unit 200 that controls transmission and cutoff of the light to be measured. (C) a signal output from the photoelectric conversion element 100 is input according to the integration instruction signal SM, and the photoelectric conversion element 100 is a photodiode that generates a charge corresponding to the intensity of the light to be measured and outputs the charge as a current signal. An integration circuit 300 for integrating the capacitance into the capacitance element 310 connected between the input and output terminals and discharging the electric charge accumulated in the capacitance element 310 in response to the reset instruction signal R1; The dark current signal output from the photoelectric conversion element 100 is input, a substantially average value of the dark current is obtained, and the integration circuit 300 is provided in accordance with the dark current removal instruction signal RM.
And (e) an output signal from the integration circuit 300 is input, and the light to be measured is cut off in response to the subtraction instruction signal SB. Holds the value V1 of the output signal of the integration circuit 300 after the integration circuit 300 integrates the dark current signal from which the substantially average value of the dark current has been removed for a predetermined time T at
The value V2 and the value of the output signal of the integration circuit 300 after the integration circuit 300 integrates the current signal from the photoelectric conversion element 100 from which the substantially average value of the dark current has been removed over a predetermined time T in the transmission state of the light to be measured. A difference calculation circuit 500 that outputs a signal corresponding to the difference from V1 and resets a held value in response to a reset instruction signal R2; and (f) a light transmission state display signal TR output from the light cutoff control unit 200.
And a timing generation circuit 600 that outputs an integration instruction signal SM, a reset instruction signal R1, a dark current removal instruction signal RM, a subtraction instruction signal SB, and a reset instruction signal R2 in synchronization with the light transmission state display signal TR. And
【0031】光電変換素子100として、赤外線測定の
場合には、InGaAsからなるフォトダイオードを好
適に採用できる。なお、以下の説明では、暗電流成分が
光電変換素子100が出力する電流信号の大部分を占め
る場合を想定する。In the case of infrared measurement, a photodiode made of InGaAs can be suitably used as the photoelectric conversion element 100. In the following description, it is assumed that the dark current component occupies most of the current signal output from the photoelectric conversion element 100.
【0032】図1に示すように、光電変換素子100の
カソード端子は接地され、光電変換素子100はアノー
ド端子から電流信号を出力する。As shown in FIG. 1, the cathode terminal of the photoelectric conversion element 100 is grounded, and the photoelectric conversion element 100 outputs a current signal from the anode terminal.
【0033】光電変換素子100のカソード端子が接地
されるとともに、電流信号出力端子であるアノード端子
は、接地レベルとイマジナリショート状態にある積分回
路300の演算増幅器320の負入力端子321に接続
されるので、カソード端子とアノード端子との間に印加
されるバイアス電圧をほぼ極限まで低減される。したが
って、発生する暗電流の絶対量が低減される。The cathode terminal of the photoelectric conversion element 100 is grounded, and the anode terminal, which is a current signal output terminal, is connected to the ground level and the negative input terminal 321 of the operational amplifier 320 of the integration circuit 300 in an imaginary short state. Therefore, the bias voltage applied between the cathode terminal and the anode terminal can be reduced to the limit. Therefore, the absolute amount of the generated dark current is reduced.
【0034】光遮断制御部200は、(i)測定対象光
の光電変換素子100への光路中に配設された光チョッ
パ210と、(ii)光チョッパ210によって、測定対
象光が遮断状態および透過状態のいずれの状態にあるの
かを検出し、透過状態の場合に有意となる光透過状態表
示信号TRを出力するフォトインタラプタ220とを備
える。The light cutoff control unit 200 controls the light to be measured in a cutoff state by (i) an optical chopper 210 disposed in an optical path of the light to be measured to the photoelectric conversion element 100 and (ii) an optical chopper 210. A photo-interrupter 220 that detects which state of the transmission state it is in and outputs a light transmission state display signal TR that is significant in the case of the transmission state.
【0035】積分回路300は、(i)光電変換素子1
00から出力された電流信号を負入力端子321から入
力するとともに、正入力端子322が接地された演算増
幅器320と、(ii)演算増幅器320の負入力端子3
21と第1の端子が接続された容量素子310と、(ii
i)容量素子310の第2の端子と第1の端子が接続さ
れるとともに、第2の端子が演算増幅器320の出力端
子323に接続され、積分指示信号SMに応じて開閉す
るスイッチ素子330と、(iv)演算増幅器320の負
入力端子321と第1の端子が接続されるとともに、第
2の端子が演算増幅器320の出力端子323に接続さ
れ、リセット指示信号R1に応じて開閉するスイッチ素
子340とを備える。The integrating circuit 300 includes (i) the photoelectric conversion element 1
00, an operational amplifier 320 having a negative input terminal 321 and a positive input terminal 322 grounded, and (ii) a negative input terminal 3 of the operational amplifier 320.
(Ii) a capacitor 310 having the first terminal connected to the first terminal;
i) a switch element 330 having a second terminal connected to the first terminal of the capacitive element 310, a second terminal connected to the output terminal 323 of the operational amplifier 320, and opening / closing in response to the integration instruction signal SM; (Iv) a switch element having a negative input terminal 321 of the operational amplifier 320 connected to the first terminal, a second terminal connected to the output terminal 323 of the operational amplifier 320, and opening and closing in response to the reset instruction signal R1. 340.
【0036】暗電流除去回路400は、(i)積分回路
300の電流信号の入力端子にソース端子が接続される
とともに、ドレイン端子が接地された電界効果トランジ
スタ410と、(ii)電界効果トランジスタ410のゲ
ート端子が第1の端子に接続されるとともに、第2の端
子が接地された容量素子420と、(iii)電界効果ト
ランジスタ410のゲート端子が第1の端子に接続され
るとともに、第2の端子が積分回路300の出力端子に
接続され、暗電流除去指示信号RMに応じて開閉するス
イッチ素子430とを備える。The dark current elimination circuit 400 includes (i) a field effect transistor 410 having a source terminal connected to the current signal input terminal of the integration circuit 300 and a drain terminal grounded, and (ii) a field effect transistor 410. The gate terminal of the capacitor 420 is connected to the first terminal, the second terminal is grounded, the capacitor 420 is connected to the first terminal, and (iii) the gate terminal of the field effect transistor 410 is connected to the first terminal. Is connected to the output terminal of the integration circuit 300, and includes a switch element 430 that opens and closes in response to the dark current removal instruction signal RM.
【0037】差分演算回路500は、(i)積分回路3
00から出力された信号を第1の端子に入力し、減算指
示信号SBに応じて開閉するスイッチ素子510と、
(ii)スイッチ素子510の第2の端子から出力された
信号を第1の端子に入力する容量素子520と、(ii
i)容量素子520の第2の端子から出力された電流信
号を負入力端子531から入力するとともに、正入力端
子532が接地された演算増幅器530と、(iv)演算
増幅器530の負入力端子531と第1の端子が接続さ
れるとともに、第2の端子が演算増幅器530の出力端
子533に接続された容量素子540と、(v)演算増
幅器530の負入力端子531と第1の端子が接続され
るとともに、第2の端子が演算増幅器530の出力端子
533に接続され、リセット指示信号R2に応じて開閉
するスイッチ素子550とを備える。The difference calculation circuit 500 includes (i) the integration circuit 3
A switch element 510 that inputs the signal output from the first terminal 00 to the first terminal and opens and closes in response to the subtraction instruction signal SB;
(Ii) a capacitive element 520 for inputting a signal output from the second terminal of the switch element 510 to the first terminal;
i) the current signal output from the second terminal of the capacitive element 520 is input from the negative input terminal 531 and the positive input terminal 532 is grounded; and (iv) the negative input terminal 531 of the operational amplifier 530. And the first terminal are connected, and the second terminal is connected to the output terminal 533 of the operational amplifier 530. (v) The negative input terminal 531 of the operational amplifier 530 is connected to the first terminal. And a switch element 550 having a second terminal connected to the output terminal 533 of the operational amplifier 530 and opening and closing in response to the reset instruction signal R2.
【0038】本実施形態の光検出装置は、以下のように
して、測定対象光の受光量を測定する。図2は、本実施
形態の光検出装置の動作を示すタイミングチャートであ
る。なお、図2において、光透過状態表示信号TR、積
分指示信号SM、リセット指示信号R1、減算指示信号
SB、および、リセット指示信号R2は、高レベルでは
有意であり、光透過状態表示信号TRを除く各信号が開
閉を制御するスイッチ素子を閉じるとともに、低レベル
では非有意であり、光透過状態表示信号TRを除く各信
号が開閉を制御するスイッチ素子を開放する。一方、暗
電流除去信号RMは、高レベルでは非有意であり、スイ
ッチ素子430が閉じるとともに、低レベルでは有意で
あり、スイッチ素子430が開放する。The photodetector of this embodiment measures the amount of received light of the light to be measured as follows. FIG. 2 is a timing chart showing the operation of the photodetector of the present embodiment. In FIG. 2, the light transmission state display signal TR, the integration instruction signal SM, the reset instruction signal R1, the subtraction instruction signal SB, and the reset instruction signal R2 are significant at a high level. Each signal except for closing the switch element that controls the opening and closing, and at the low level is insignificant, and each signal except the light transmission state display signal TR opens the switching element that controls the opening and closing. On the other hand, the dark current elimination signal RM is insignificant at a high level, and the switch element 430 is closed, and is significant at a low level, and the switch element 430 is opened.
【0039】本実施形態の光検出装置では、光遮断制御
部200の光チョッパ210の動作により、光電変換素
子100にとって、測定対象光が光遮断状態および光透
過状態が周期的に発生する。そして、この光遮断状態お
よび光透過状態の交互かつ周期的な変化がフォトインタ
ラプタ220で検出され、タイミング発生回路600へ
光透過状態表示信号TRとして通知される。In the photodetector of this embodiment, the light chopper 210 of the light blocking controller 200 causes the photoelectric conversion element 100 to periodically generate the light blocking state and the light transmitting state of the light to be measured. Then, the alternating and periodic change of the light blocking state and the light transmitting state is detected by the photo interrupter 220, and is notified to the timing generation circuit 600 as the light transmitting state display signal TR.
【0040】光透過状態表示信号TRが有意から非有意
へと変化する、すなわち、光電変換素子100にとって
の測定対象光の非入射状態が開始すると、タイミング発
生回路600が暗電流除去指示信号RMを非有意とし
て、スイッチ素子430を開放する。When the light transmission state display signal TR changes from significant to insignificant, that is, when the non-incident state of the light to be measured for the photoelectric conversion element 100 starts, the timing generation circuit 600 generates the dark current removal instruction signal RM. As insignificant, switch element 430 is opened.
【0041】この状態で、光電変換素子100で暗電流
が発生すると、電界効果トランジスタ410を介して暗
電流が流れる。そして、暗電流量の略平均値が電界効果
トランジスタ410を介して流すゲート電位が容量素子
420の第1の端子に発生する。When a dark current is generated in the photoelectric conversion element 100 in this state, the dark current flows through the field effect transistor 410. Then, a gate potential at which a substantially average value of the amount of dark current flows through the field effect transistor 410 is generated at the first terminal of the capacitor 420.
【0042】次に、タイミング発生回路600が暗電流
除去指示信号RMを有意とする。この結果、暗電流除去
指示信号RMを有意とした直前における暗電流量の略平
均値に応じたゲート電位が容量素子420の第1の端子
に保持され、以後、暗電流除去回路400が、積分回路
300の電流信号入力端子に流入する電流から暗電流量
の略平均値を、引き抜き続ける。Next, the timing generation circuit 600 makes the dark current removal instruction signal RM significant. As a result, the gate potential corresponding to the approximate average value of the amount of dark current immediately before the dark current removal instruction signal RM is made significant is held at the first terminal of the capacitor 420. Thereafter, the dark current removal circuit 400 The approximate average value of the dark current amount is continuously extracted from the current flowing into the current signal input terminal of the circuit 300.
【0043】引き続き、タイミング発生回路600が積
分指示信号を有意とした後、リセット指示信号R1を一
時的に有意とする。Subsequently, after the timing generation circuit 600 makes the integration instruction signal significant, the reset instruction signal R1 is temporarily made significant.
【0044】以後、時間Tにわたって、光電変換素子1
00から出力された暗電流信号から暗電流の略平均値が
除去された電流信号を、積分回路に入力し、流入した電
荷を容量素子310に蓄積する。容量素子310に蓄積
された電荷は、暗電流除去回路400で引き抜ききれな
かった暗電流の時間Tの積分値である。Thereafter, over the time T, the photoelectric conversion element 1
The current signal obtained by removing the substantially average value of the dark current from the dark current signal output from 00 is input to the integration circuit, and the inflowing charge is accumulated in the capacitor 310. The electric charge accumulated in the capacitor 310 is an integral value of a dark current time T that cannot be extracted by the dark current removing circuit 400.
【0045】次いで、タイミング発生回路600が、減
算指示信号SBを一時的に有意として、差分演算回路5
00のスイッチ素子510を一時的に閉じることによ
り、その時点での積分回路300の出力値V1を差分演
算回路500の容量素子520に保持する。Next, the timing generation circuit 600 sets the subtraction instruction signal SB to be temporarily significant, and
By temporarily closing the switch element 510 of 00, the output value V1 of the integration circuit 300 at that time is held in the capacitance element 520 of the difference calculation circuit 500.
【0046】この後、光透過状態表示信号TRが非有意
から有意へと変化する、すなわち、光電変換素子100
にとっての測定対象光の入射状態が開始する。この結
果、光電変換素子100からは、信号電流成分と暗電流
成分とを含む電流信号が出力される。Thereafter, the light transmission state display signal TR changes from insignificant to significant, that is, the photoelectric conversion element 100
, The state of incidence of the light to be measured starts. As a result, the photoelectric conversion element 100 outputs a current signal including a signal current component and a dark current component.
【0047】光透過状態表示信号TRの非有意から有意
への変化から、適当な時間T1経過後、リセット指示信
号R1を一時的に有意とされ、容量素子310に蓄積さ
れた電荷を放出する。そして、この後、時間Tに渡っ
て、光電変換素子100から出力された電流信号から暗
電流の略平均値が除去された電流信号を、積分回路30
0に入力し、流入した電荷を容量素子310に蓄積す
る。容量素子310に蓄積された電荷は、暗電流除去回
路400で引き抜ききれなかった暗電流の時間Tにわた
る積分値と光電変換素子100が受光した測定対象光の
受光に応じた信号電流の時間Tにわたる積分値との和の
値である。After an appropriate time T1 has elapsed from the change of the light transmission state display signal TR from insignificant to significant, the reset instruction signal R1 is temporarily made significant, and the electric charge accumulated in the capacitor 310 is released. After that, over a period of time T, the current signal obtained by removing the substantially average value of the dark current from the current signal output from the photoelectric conversion element 100 is integrated with the integrating circuit 30.
0, and the inflowing charge is stored in the capacitor 310. The charge accumulated in the capacitor 310 extends over an integral value of the dark current over the time T that could not be extracted by the dark current removing circuit 400 and over a time T of the signal current corresponding to the reception of the measurement target light received by the photoelectric conversion element 100. It is the value of the sum with the integral value.
【0048】光電変換素子100から出力された電流信
号から暗電流の略平均値が除去された電流信号は、暗電
流成分と信号電流成分との和であるが、暗電流成分が電
流全体に占める割合は、光電変換素子100から出力さ
れた電流信号における暗電流成分の占める割合に比べて
格段に低減されている。The current signal obtained by removing the substantially average value of the dark current from the current signal output from the photoelectric conversion element 100 is the sum of the dark current component and the signal current component, but the dark current component occupies the entire current. The ratio is much lower than the ratio of the dark current component in the current signal output from the photoelectric conversion element 100.
【0049】光電変換素子100から出力された電流信
号から暗電流の略平均値が除去された電流信号の時間T
にわたる積分の結果、積分回路300の出力信号の値V
2は、 V2=V1’+V3 …(1) ここで、V1’:暗電流成分の寄与値 V3:信号電流成分の寄与値 である。上述のように、積分対象の電流信号からは、光
電変換素子100からの出力時の電流信号における暗電
流の殆どは除去されているので、もはや、V1’>>V
3という関係は成立しない。The time T of the current signal obtained by removing the substantially average value of the dark current from the current signal output from the photoelectric conversion element 100
As a result of the integration over the range, the value V of the output signal of the integration circuit 300 is
2 is V2 = V1 ′ + V3 (1) where V1 ′ is a contribution value of a dark current component and V3 is a contribution value of a signal current component. As described above, since most of the dark current in the current signal at the time of output from the photoelectric conversion element 100 has been removed from the current signal to be integrated, V1 ′ >> V
The relationship of 3 does not hold.
【0050】ところで、上記のように、同一の光電変換
素子100から出力される暗電流から暗電流量の略平均
値を除去した電流の時間Tにわたる積分に応じた積分回
路300の出力値がV1であるから、V1’≒V1であ
る。したがって、 V2=V1+V3 …(2) が非常に良い近似となる。以後、この近似を採用する。By the way, as described above, the output value of the integrating circuit 300 corresponding to the integration over the time T obtained by removing the substantially average value of the dark current amount from the dark current output from the same photoelectric conversion element 100 is V1. Therefore, V1 ′ ≒ V1. Therefore, V2 = V1 + V3 (2) is a very good approximation. Hereinafter, this approximation will be adopted.
【0051】光電変換素子100から出力された電流信
号から暗電流の略平均値が除去された電流信号の積分回
路300による積分動作と並行して、リセット指示信号
R2を非有意として、スイッチ素子550を開放する。In parallel with the integration operation by the integration circuit 300 of the current signal from which the substantially average value of the dark current has been removed from the current signal output from the photoelectric conversion element 100, the reset instruction signal R2 is made insignificant and the switch element 550 is set. To release.
【0052】時間Tにわたる、光電変換素子100から
出力された電流信号から暗電流の略平均値が除去された
電流信号の積分の後、減算指示信号SBを一時的に有意
として、差分演算回路500のスイッチ素子510を一
時的に閉じ、積分回路300の出力値V2が容量素子5
10に伝達される。この結果、値V3(=V2−V1)
に応じた電荷が容量素子540に蓄積され、差分演算回
路の出力として出力値V3が出力される。(2)式よ
り、出力値V3は、測定対象光の受光量を反映してい
る。After the integration of the current signal obtained by removing the substantially average value of the dark current from the current signal output from the photoelectric conversion element 100 over the time T, the subtraction instruction signal SB is temporarily made significant, and the difference calculation circuit 500 Is temporarily closed, and the output value V2 of the integrating circuit 300 is
It is transmitted to 10. As a result, the value V3 (= V2−V1)
Is accumulated in the capacitor 540, and the output value V3 is output as the output of the difference calculation circuit. From equation (2), the output value V3 reflects the amount of received light of the measurement target light.
【0053】ところで、上述のように、V1>>V3で
はないので、値V2と値V1との差分を演算して求めら
れた値V3は、良好なSN比を確保して測定対象光の受
光量を反映している。したがって、値V3をサンプルす
ることにより、測定対象光の受光量を高SN比で測定す
ることができる。As described above, since V1 >> V3 is not satisfied, the value V3 obtained by calculating the difference between the value V2 and the value V1 can be obtained by securing a good SN ratio and receiving the light to be measured. Reflects the quantity. Therefore, by sampling the value V3, the amount of received light of the light to be measured can be measured at a high SN ratio.
【0054】そして、値V3のサンプル後、タイミング
発生回路600が各信号を初期状態に戻し、次の測定の
準備をする。After sampling the value V3, the timing generation circuit 600 returns each signal to the initial state, and prepares for the next measurement.
【0055】すなわち、本実施形態の光検出装置では、
光電変換素子からの出力電流信号の大部分が暗電流成分
であっても、まず、時間的に近接した時点で求めた、暗
電流の略平均値を除去することによって、暗電流成分と
信号電流成分との割合を改善した後、更に、残った暗電
流成分を更に時間的に近接した時点で求めた推定残留暗
電流成分を差し引くことにより、良好なSN比を確保し
て信号成分を抽出する。こうして抽出された信号成分を
計測することにより、精度良く測定対象光の受光強度を
測定できる。That is, in the photodetector of this embodiment,
Even if most of the output current signal from the photoelectric conversion element is a dark current component, first, the dark current component and the signal current are removed by removing the approximate average value of the dark current obtained at a point in time that is close in time. After the ratio with the component is improved, the signal component is extracted by securing a good SN ratio by subtracting the estimated residual dark current component obtained when the remaining dark current component is further closer in time. . By measuring the signal components thus extracted, the received light intensity of the light to be measured can be accurately measured.
【0056】なお、本実施形態の光検出装置を1次元状
または2次元状に配列し、各検出器を画素に対応させる
ことにより、光電変換素子からの出力電流信号の大部分
が暗電流成分であるような光電変換素子を使用した場合
でも、良好なSN比を確保して、好適な入力像の撮像を
実行する1次元または2次元の固体撮像素子を実現する
ことができる。By arranging the photodetectors of this embodiment one-dimensionally or two-dimensionally and making each detector correspond to a pixel, the majority of the output current signal from the photoelectric conversion element is a dark current component. Even when such a photoelectric conversion element is used, it is possible to realize a one-dimensional or two-dimensional solid-state imaging element that executes a suitable input image capturing while securing a good SN ratio.
【0057】本発明は、上記の実施例に限定されるもの
ではなく、変形が可能である。例えば、暗電流成分が光
電変換素子の出力電流における大部分を占める場合では
なくとも、本発明の光検出装置を使用可能であり、非常
に高精度で測定対象光の受光量を測定することができ
る。The present invention is not limited to the above embodiment, but can be modified. For example, even when the dark current component does not occupy most of the output current of the photoelectric conversion element, the photodetector of the present invention can be used, and the light reception amount of the light to be measured can be measured with extremely high accuracy. it can.
【0058】[0058]
【発明の効果】以上、詳細に説明した通り、本発明の光
検出装置によれば、光チョッパなどを備える光遮断制御
部で、光電変換素子への測定対象光の入射/非入射状態
を周期的に発生させ、まず、非入射状態での光電変換素
子が発生する暗電流の平均値を除去して、暗電流成分と
信号電流成分との割合を改善した後、更に、残った暗電
流成分を更に時間的に近接した時点で求めた推定残留暗
電流成分を差し引くことにより、信号成分を抽出するの
で、良好なSN比を確保して信号成分を抽出する。この
結果、冷却を必要とすることなく、光電変換素子からの
出力電流信号の大部分が暗電流成分であるような光電変
換素子を使用した場合でも、SN比を確保して、測定対
象光の受光量を測定することができる。As described above in detail, according to the photodetector of the present invention, the light cutoff control unit including the optical chopper or the like periodically changes the incident / non-incident state of the light to be measured to the photoelectric conversion element. First, the average value of the dark current generated by the photoelectric conversion element in the non-incident state is removed, and the ratio between the dark current component and the signal current component is improved. The signal component is extracted by subtracting the estimated residual dark current component obtained at a time point closer to the time. Therefore, a good SN ratio is secured and the signal component is extracted. As a result, without using cooling, even when a photoelectric conversion element in which most of the output current signal from the photoelectric conversion element is a dark current component is used, the SN ratio is secured and the The amount of received light can be measured.
【0059】また、本発明の固体撮像素子は、各画素に
応じて本発明の光検出装置を採用するので、光電変換素
子からの出力電流信号の大部分が暗電流成分であるよう
な光電変換素子を使用した場合でも、SN比を確保し
て、好適な入力像の1次元または2次元の撮像が実現で
きる。Since the solid-state imaging device of the present invention employs the photodetector of the present invention in accordance with each pixel, the photoelectric conversion device in which most of the output current signal from the photoelectric conversion device is a dark current component. Even when an element is used, a suitable one-dimensional or two-dimensional imaging of an input image can be realized while securing the SN ratio.
【図面の簡単な説明】[Brief description of the drawings]
【図1】本発明の実施形態の光検出装置の構成図であ
る。FIG. 1 is a configuration diagram of a photodetector according to an embodiment of the present invention.
【図2】本発明の実施形態の光検出装置の動作を説明す
るタイミングチャートである。FIG. 2 is a timing chart illustrating the operation of the photodetector according to the embodiment of the present invention.
100…光電変換素子、200…光遮断制御部、210
…光チョッパ、220…フォトインタラプタ、300…
積分回路、310…容量素子、320…演算増幅器、3
30,340…スイッチ素子、400…暗電流除去回
路、410…電界効果トランジスタ、420…容量素
子、430…スイッチ素子、500…差分演算回路、5
10,550…スイッチ素子、530…差動増幅器、5
20,540…容量素子、600…タイミング発生回
路。100: photoelectric conversion element, 200: light blocking controller, 210
... Optical chopper, 220 ... Photo interrupter, 300 ...
Integration circuit, 310: capacitive element, 320: operational amplifier, 3
30, 340: switch element, 400: dark current elimination circuit, 410: field effect transistor, 420: capacitance element, 430: switch element, 500: difference calculation circuit, 5
10,550: switch element, 530: differential amplifier, 5
20, 540: Capacitance element, 600: Timing generation circuit.
Claims (5)
御する光遮断制御部と、 測定対象光の強度に応じた電荷を発生し、電流信号とし
て出力する光電変換素子と、 前記光電変換素子から出力された電流信号を入力し、積
分指示信号に応じて、入出力端子間に接続された第1の
容量素子に積分する積分回路と、 測定対象光の遮断時に前記光電変換素子から出力された
暗電流信号を入力し、前記暗電流の略平均値を求めると
ともに、暗電流除去指示信号に応じて、前記積分回路に
入力する電流信号から前記暗電流の略平均値を除去する
暗電流除去回路と、 前記積分回路からの出力信号を入力し、減算指示信号に
応じて、測定対象光の遮断時の所定時間にわたって前記
略平均値が除去された前記暗電流信号を前記積分回路で
積分した後の前記積分回路の出力信号の第1の値を保持
するとともに、測定対象光の透過時の前記所定時間にわ
たって前記略平均値が除去された前記光電変換素子から
の電流信号を前記積分回路で積分した後の前記積分回路
の出力信号の第2の値と前記第1の値との差に応じた信
号を出力する差分演算回路と、 前記光遮断制御部から出力された光透過状態表示信号を
入力し、前記光透過状態表示信号の変化に同期して、前
記積分指示信号、前記暗電流除去指示信号、および、前
記減算指示信号を出力するタイミング発生回路と、 を備えることを特徴とする光検出装置。A light-blocking controller that periodically controls transmission and blocking of the light to be measured; a photoelectric conversion element that generates a charge corresponding to the intensity of the light to be measured and outputs the charge as a current signal; An integration circuit that receives a current signal output from the conversion element and integrates the current signal into a first capacitance element connected between the input and output terminals in accordance with an integration instruction signal; The output dark current signal is input, an approximate average value of the dark current is determined, and a dark average value of the dark current is removed from the current signal input to the integration circuit according to the dark current removal instruction signal. A current removal circuit, an output signal from the integration circuit, and a dark current signal from which the substantially average value has been removed over a predetermined time when the light to be measured is cut off in accordance with the subtraction instruction signal, by the integration circuit. The product after integration While retaining the first value of the output signal of the circuit, the integration circuit integrates the current signal from the photoelectric conversion element from which the substantially average value has been removed over the predetermined time during transmission of the light to be measured. A difference calculation circuit that outputs a signal corresponding to a difference between a second value of the output signal of the integration circuit and the first value, and a light transmission state display signal output from the light blocking control unit, And a timing generation circuit that outputs the integration instruction signal, the dark current removal instruction signal, and the subtraction instruction signal in synchronization with a change in the light transmission state display signal.
準電位に設定されたフォトダイオードであり、 前記積分回路は、前記光電変換素子から出力された電流
信号から出力された暗電流信号を入力する負入力端子
と、前記基準電位に設定された正入力端子とを有する演
算増幅器を備える、 ことを特徴とする請求項1記載の光検出装置。2. The photoelectric conversion element is a photodiode having a cathode terminal set to a reference potential, and the integration circuit inputs a dark current signal output from a current signal output from the photoelectric conversion element. The photodetector according to claim 1, further comprising an operational amplifier having a negative input terminal and a positive input terminal set to the reference potential.
されるとともに、ドレイン端子が基準電位に設定された
電界効果トランジスタと、 前記電界効果トランジスタのゲート端子が第1の端子に
接続されるとともに、第2の端子が基準電位に設定され
た第2の容量素子と、 前記電界効果トランジスタのゲート端子が第1の端子に
接続されるとともに、第2の端子が前記積分回路の出力
端子に接続され、暗電流除去指示信号に応じて開閉する
第1のスイッチ素子と、 を備えることを特徴とする請求項1記載の光検出装置。3. The dark current elimination circuit includes: a field effect transistor having a source terminal connected to a current signal input terminal of the integration circuit and a drain terminal set to a reference potential; and a gate of the field effect transistor. A second capacitor having a terminal connected to the first terminal, a second terminal set to a reference potential, and a gate terminal of the field-effect transistor connected to the first terminal; The light detection device according to claim 1, further comprising: a first switch element connected to an output terminal of the integration circuit, and opened and closed in response to a dark current removal instruction signal.
換素子はInGaAsからなるフォトダイオードであ
る、ことを特徴とする請求項1記載の光検出装置。4. The photodetector according to claim 1, wherein the light to be measured is infrared light, and the photoelectric conversion element is a photodiode made of InGaAs.
2次元状に配列したことを特徴とする固体撮像装置。5. A solid-state imaging device wherein the photodetectors according to claim 1 are arranged one-dimensionally or two-dimensionally.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9217553A JPH10115550A (en) | 1996-08-19 | 1997-08-12 | Optical detector and solid-state image sensing device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8-217601 | 1996-08-19 | ||
| JP21760196 | 1996-08-19 | ||
| JP9217553A JPH10115550A (en) | 1996-08-19 | 1997-08-12 | Optical detector and solid-state image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10115550A true JPH10115550A (en) | 1998-05-06 |
Family
ID=26522086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9217553A Pending JPH10115550A (en) | 1996-08-19 | 1997-08-12 | Optical detector and solid-state image sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10115550A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021056016A (en) * | 2019-09-27 | 2021-04-08 | ソニーセミコンダクタソリューションズ株式会社 | Solid-state image sensor and distance measuring system |
| WO2024116583A1 (en) * | 2022-11-30 | 2024-06-06 | 浜松ホトニクス株式会社 | Photodetection circuit and photodetection device |
-
1997
- 1997-08-12 JP JP9217553A patent/JPH10115550A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021056016A (en) * | 2019-09-27 | 2021-04-08 | ソニーセミコンダクタソリューションズ株式会社 | Solid-state image sensor and distance measuring system |
| US12107174B2 (en) | 2019-09-27 | 2024-10-01 | Sony Semiconductor Solutions Corporation | Light detecting device and system |
| WO2024116583A1 (en) * | 2022-11-30 | 2024-06-06 | 浜松ホトニクス株式会社 | Photodetection circuit and photodetection device |
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