JPH1012377A - Method of manufacturing active matrix type organic EL display - Google Patents
Method of manufacturing active matrix type organic EL displayInfo
- Publication number
- JPH1012377A JPH1012377A JP8158671A JP15867196A JPH1012377A JP H1012377 A JPH1012377 A JP H1012377A JP 8158671 A JP8158671 A JP 8158671A JP 15867196 A JP15867196 A JP 15867196A JP H1012377 A JPH1012377 A JP H1012377A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- organic light
- emitting layer
- organic
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011159 matrix material Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 26
- 230000000694 effects Effects 0.000 abstract description 3
- 239000003086 colorant Substances 0.000 abstract description 2
- -1 polytetrahydrothiophenylphenylene Polymers 0.000 description 10
- 238000000059 patterning Methods 0.000 description 6
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 6
- 239000002243 precursor Substances 0.000 description 5
- 239000000975 dye Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- RETDKIXQRINZEF-UHFFFAOYSA-N 1,3-benzoxazole;zinc Chemical compound [Zn].C1=CC=C2OC=NC2=C1 RETDKIXQRINZEF-UHFFFAOYSA-N 0.000 description 1
- 229910017073 AlLi Inorganic materials 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- CHZWRIFDYXSVOD-UHFFFAOYSA-M chromenylium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.[O+]1=CC=CC2=CC=CC=C21 CHZWRIFDYXSVOD-UHFFFAOYSA-M 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- LISFMEBWQUVKPJ-UHFFFAOYSA-N quinolin-2-ol Chemical compound C1=CC=C2NC(=O)C=CC2=C1 LISFMEBWQUVKPJ-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical class C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JFLKFZNIIQFQBS-FNCQTZNRSA-N trans,trans-1,4-Diphenyl-1,3-butadiene Chemical class C=1C=CC=CC=1\C=C\C=C\C1=CC=CC=C1 JFLKFZNIIQFQBS-FNCQTZNRSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Ink Jet (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
(57)【要約】
【解決手段】従来、パターニングができないとされた有
機ＥＬ材料をインクジェット方式により形成および配列
することで、赤、緑、青の発光色を備える有機発光層を
画素毎に任意にパターニングすることが可能となった。
これにより、フルカラー表示のアクティブマトリックス
型有機ＥＬ表示体を実現した。
【効果】安価で大画面のフルカラー表示体が製造可能と
なり、効果は大である。
(57) Abstract: By forming and arranging an organic EL material which is conventionally considered to be unpatternable by an ink-jet method, an organic light-emitting layer having red, green, and blue luminescent colors can be arbitrarily provided for each pixel. It became possible to pattern.
Thus, an active matrix type organic EL display of full color display was realized. [Effect] An inexpensive and large-screen full-color display can be manufactured, and the effect is great.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、薄膜トランジスタ
を用いたアクティブマトリックス型のＥＬ表示体のイン
クジェット方式を用いた製造方法に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a method of manufacturing an active matrix type EL display using thin film transistors using an ink jet system.
【０００２】[0002]
【従来の技術】有機ＥＬ素子は、蛍光性有機化合物を含
む薄膜を、陰極と陽極とで挟んだ構成を有し、前記薄膜
に電子および正孔（ホール）を注入して再結合させるこ
とにより励起子（エキシトン）を生成させ、このエキシ
トンが失活する際の光の放出（蛍光・燐光）を利用して
発光させる素子である。2. Description of the Related Art An organic EL device has a structure in which a thin film containing a fluorescent organic compound is sandwiched between a cathode and an anode. Electrons and holes are injected into the thin film and recombined. This is an element that generates excitons and emits light by utilizing light emission (fluorescence / phosphorescence) when the excitons are deactivated.
【０００３】この有機ＥＬ素子の特徴は、１０Ｖ以下の
低電圧で１００〜１０００００ cd/m2 程度の高輝度の
面発光が可能であり、また蛍光物質の種類を選択するこ
とにより青色から赤色までの発光が可能なことである。[0003] The features of this organic EL device are that it can emit a high-intensity surface light of about 100 to 100000 cd / m2 at a low voltage of 10 V or less, and can change the color from blue to red by selecting the type of fluorescent substance. Light emission is possible.
【０００４】有機ＥＬ素子は、安価な大面積フルカラー
表示素子を実現するものとして注目を集めている（電子
情報通信学会技術報告、第８９巻、ＮＯ．１０６、４９
ページ、１９８９年）。報告によると、強い蛍光を発す
る有機色素を発光層に使用し、青、緑、赤色の明るい発
光を得ている。これは、薄膜状で強い蛍光を発し、ピン
ホール欠陥の少ない有機色素を用いたことで、高輝度な
フルカラー表示を実現できたと考えられている。[0004] Organic EL elements have attracted attention as realizing inexpensive large-area full-color display elements (IEICE Technical Report, Vol. 89, Nos. 106, 49).
1989). According to reports, organic dyes that emit strong fluorescence are used in the light-emitting layer, and bright blue, green, and red light is emitted. It is thought that a high-luminance full-color display could be realized by using an organic dye which emits strong fluorescence in a thin film state and has few pinhole defects.
【０００５】更に特開平５−７８６５５号公報には、有
機発光層の成分が有機電荷材料と有機発光材料の混合物
からなる薄膜層を設け、濃度消光を防止して発光材料の
選択幅を広げ、高輝度なフルカラー素子とする旨が提案
されている。Further, Japanese Patent Application Laid-Open No. 5-78655 discloses a thin film layer in which the components of the organic light emitting layer are composed of a mixture of an organic charge material and an organic light emitting material. It has been proposed to use a high-luminance full-color element.
【０００６】しかし、いずれの報告にも、実際のフルカ
ラー表示パネルの構成や製造方法については言及されて
いない。[0006] However, none of the reports mentions the actual configuration or manufacturing method of a full-color display panel.
【０００７】[0007]
【発明が解決しようとする課題】前述の有機色素を用い
た有機薄膜EL素子は、青、緑、赤の発光を示す。しか
し、よく知られているように、フルカラー表示体を実現
するためには、３原色を発光する有機発光層を画素毎に
配置する必要がある。従来、有機発光層をパターニング
する技術は非常に困難とされていた。原因は、一つは反
射電極材の金属表面が不安定であり、蒸着のパターニン
グ精度が出ないという点である。２つめは、正孔注入層
および有機発光層を形成するポリマーや前駆体がフォト
リソグラフィー等のパターニング工程に対して耐性が無
いという点である。The organic thin film EL device using the above-mentioned organic dye emits blue, green and red light. However, as is well known, in order to realize a full-color display, it is necessary to arrange an organic light-emitting layer for emitting three primary colors for each pixel. Conventionally, a technique for patterning an organic light emitting layer has been extremely difficult. One of the causes is that the metal surface of the reflective electrode material is unstable, and the patterning accuracy of vapor deposition is not high. Second, polymers and precursors forming the hole injection layer and the organic light emitting layer are not resistant to a patterning step such as photolithography.
【０００８】本発明は、上述したような課題を解決する
ものであり、その目的は、有機発光層をインクジェット
方式により画素毎にパターニングしたアクティブマトリ
ックス型ＥＬ表示体の製造方法を提供することにある。An object of the present invention is to solve the above-mentioned problems, and an object of the present invention is to provide a method of manufacturing an active matrix type EL display in which an organic light emitting layer is patterned for each pixel by an ink jet method. .
【０００９】[0009]
【課題を解決するための手段】本発明に関わるアクティ
ブマトリックス型有機ＥＬ表示体の製造方法は、薄膜ト
ランジスタを有するガラス基板に形成された透明画素電
極上層に正孔注入層が形成され、この上層に少なくとも
各画素毎に赤、緑、青より選択された発光色を有する有
機発光層が形成され、更にこの上層に反射電極が形成さ
れるアクティブマトリックス型有機ＥＬ表示体の製造方
法において、前記有機発光層の形成および配列がインク
ジェット方式によりなされることを特徴とし、また、薄
膜トランジスタを有するガラス基板に形成された透明画
素電極上層に少なくとも各画素毎に赤、緑、青より選択
された発光色を有する有機発光層が形成され、更にこの
上層に反射電極が形成されるアクティブマトリックス型
有機ＥＬ表示体の製造方法において、前記有機発光層の
形成および配列がインクジェット方式によりなされるこ
とを特徴とする。According to a method of manufacturing an active matrix type organic EL display device according to the present invention, a hole injection layer is formed on a transparent pixel electrode formed on a glass substrate having a thin film transistor. An organic light emitting layer having an emission color selected from at least red, green, and blue is formed for each pixel, and a reflective electrode is formed on the organic light emitting layer. The layers are formed and arranged by an ink-jet method, and at least each pixel has a light emission color selected from red, green, and blue on an upper layer of a transparent pixel electrode formed on a glass substrate having a thin film transistor. An active matrix organic EL display in which an organic light emitting layer is formed and a reflective electrode is further formed thereon In production method, formation and arrangement of the organic light emitting layer is characterized by being made by an inkjet method.
【００１０】更に、薄膜トランジスタを有するガラス基
板に形成された反射画素電極上層に少なくとも各画素毎
に赤、緑、青より選択された発光色を有する有機発光層
が形成され、この上層に正孔注入層が形成され、更にこ
の上層に透明電極が形成されるアクティブマトリックス
型有機ＥＬ表示体の製造方法において、前記有機発光層
の形成および配列がインクジェット方式によりなされる
ことを特徴とし、また、薄膜トランジスタを有するガラ
ス基板に形成された反射画素電極上層に少なくとも各画
素毎に赤、緑、青より選択された発光色を有する有機発
光層が形成され、更にこの上層に透明電極が形成される
アクティブマトリックス型有機ＥＬ表示体の製造方法に
おいて、前記有機発光層の形成および配列がインクジェ
ット方式によりなされることを特徴とする。Further, an organic light emitting layer having a luminescent color selected from red, green and blue is formed at least for each pixel on an upper layer of the reflective pixel electrode formed on the glass substrate having the thin film transistor. A method for manufacturing an active matrix type organic EL display, wherein a layer is formed, and a transparent electrode is further formed on the layer, wherein the formation and arrangement of the organic light emitting layer are performed by an ink jet method. An active matrix type in which an organic light emitting layer having a light emission color selected from red, green, and blue is formed at least for each pixel on a reflective pixel electrode upper layer formed on a glass substrate having the transparent electrode formed thereon. In the method of manufacturing an organic EL display, the formation and arrangement of the organic light emitting layer is performed by an inkjet method. Characterized in that it is.
【００１１】本発明は、要するに図３に示すように、基
板上に形成された信号線３０１、ゲート線３０２、画素
電極３０３および薄膜トランジスタ３０４上に、インク
ジェット法により、赤、緑、青色の有機発光材料をパタ
ーニング塗布することで、フルカラー表示を実現するも
のである。According to the present invention, as shown in FIG. 3, the red, green and blue organic light-emitting devices are formed on a signal line 301, a gate line 302, a pixel electrode 303 and a thin film transistor 304 formed on a substrate by an ink-jet method. Full-color display is realized by patterning and applying a material.
【００１２】[0012]
【発明の実施の形態】以下、本発明の好適な実施形態に
ついて図面を参照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings.
【００１３】（実施例１）図１に示すように、ガラス基
板１０１上に薄膜トランジスタ１０２を形成してから、
ＩＴＯ透明画素電極１０３を形成する。(Embodiment 1) As shown in FIG. 1, after forming a thin film transistor 102 on a glass substrate 101,
An ITO transparent pixel electrode 103 is formed.
【００１４】正孔注入材料としてポリマー前駆体である
ポリテトラヒドロチオフェニルフェニレンをコーティン
グする。加熱により、前駆体はポリフェニレンビニレン
となり、厚さ０．０５ミクロンの正孔注入層１０４が形
成される。As a hole injection material, polytetrahydrothiophenylphenylene, which is a polymer precursor, is coated. By heating, the precursor becomes polyphenylene vinylene, and the hole injection layer 104 having a thickness of 0.05 μm is formed.
【００１５】次に、インクジェットプリント装置１０５
により赤、緑、青色を発色する発光材料をパターニング
塗布し、厚さ０．０５ミクロンの発色層１０６、１０
７、１０８を形成する。赤色発光材料にはシアノポリフ
ェニレンビニレン、緑色発光材料にはポリフェニレンビ
ニレン、青色発光材料にはポリフェニレンビニレンおよ
びポリアルキルフェニレンを使用する。これらの有機Ｅ
Ｌ材料はケンブリッジ・ディスプレイ・テクノロジー社
製であり、液状で入手可能である。Next, the ink jet printing apparatus 105
A luminescent material that emits red, green, and blue light is patterned and applied, and a 0.05 μm thick color-forming layer 106, 10
7 and 108 are formed. Cyanopolyphenylene vinylene is used for the red light emitting material, polyphenylene vinylene is used for the green light emitting material, and polyphenylene vinylene and polyalkylphenylene are used for the blue light emitting material. These organic E
The L material is manufactured by Cambridge Display Technology and is available in liquid form.
【００１６】最後に、厚さ０．１〜０．２ミクロンのＭ
ｇＡｇ反射電極１０９を蒸着法により形成する。Finally, M having a thickness of 0.1 to 0.2 micron
The gAg reflective electrode 109 is formed by an evaporation method.
【００１７】これにより、直視型のフルカラー有機ＥＬ
表示体が完成する。Thus, a direct-view type full-color organic EL is provided.
The display is completed.
【００１８】（実施例２）図２に示すように、ガラス基
板２０１上に薄膜トランジスタ２０２を形成してから、
ＡｌＬｉ反射画素電極２０３を形成する。Embodiment 2 As shown in FIG. 2, after forming a thin film transistor 202 on a glass substrate 201,
An AlLi reflective pixel electrode 203 is formed.
【００１９】次に、インクジェットプリント装置２０７
により赤、緑、青色を発色する発光材料をパターニング
塗布し、発色層２０４、２０５、２０６を形成する。赤
色発光材料にはシアノポリフェニレンビニレン、緑色発
光材料にはポリフェニレンビニレン、青色発光材料には
ポリフェニレンビニレンおよびポリアルキルフェニレン
を使用する。これらの有機ＥＬ材料はケンブリッジ・デ
ィスプレイ・テクノロジー社製であり、液状で入手可能
である。Next, the ink jet printing apparatus 207
A luminescent material that emits red, green, and blue light is applied by patterning to form coloring layers 204, 205, and 206. Cyanopolyphenylene vinylene is used for the red light emitting material, polyphenylene vinylene is used for the green light emitting material, and polyphenylene vinylene and polyalkylphenylene are used for the blue light emitting material. These organic EL materials are manufactured by Cambridge Display Technology, and are available in liquid form.
【００２０】正孔注入材料としてポリマー前駆体である
ポリテトラヒドロチオフェニルフェニレンをキャスト法
により形成する。加熱により、前駆体はポリフェニレン
ビニレンとなり、正孔注入層２０８が形成される。A polymer precursor, polytetrahydrothiophenylphenylene, is formed as a hole injection material by a casting method. By heating, the precursor becomes polyphenylene vinylene, and the hole injection layer 208 is formed.
【００２１】最後に、ＩＴＯ透明電極２０９を蒸着法に
より形成する。Finally, an ITO transparent electrode 209 is formed by a vapor deposition method.
【００２２】これにより、反射型のフルカラー有機ＥＬ
表示体が完成する。Thus, a reflection type full-color organic EL is provided.
The display is completed.
【００２３】（実施例３）有機発光層の有機発光材料と
して2,3,6,7-テトラヒドロ-11-オキソ−1H,5H,11H-(1)
ベンゾピラノ[6,7,8-ij]-キノリジン-10-カルボン酸を
用い、有機正孔注入層材料として1,1-ビス-(4-N,N-ジト
リルアミノフェニル)シクロヘキサンを用い、両者を混
合することで緑色の発光材料とする。Example 3 2,3,6,7-Tetrahydro-11-oxo-1H, 5H, 11H- (1) as an organic light emitting material of an organic light emitting layer
Using benzopyrano [6,7,8-ij] -quinolidine-10-carboxylic acid and 1,1-bis- (4-N, N-ditolylaminophenyl) cyclohexane as an organic hole injection layer material, To form a green light-emitting material.
【００２４】同様に、赤色の有機発光材料として、2-1
3',4'-ジヒドロキシフェニル)-3,5,7-トリヒドロキシ-1
-ベンゾピリリウムパークロレートを用いて正孔注入層
材料と混合する。Similarly, as a red organic light emitting material, 2-1
(3 ', 4'-dihydroxyphenyl) -3,5,7-trihydroxy-1
-Mix with hole injection layer material using benzopyrylium perchlorate.
【００２５】更に、青色発光層には有機正孔注入材料と
してトリス(8-ヒドロキシキノリノール)アルミニウムを
用い、有機発光材料として、2,3,6,7-テトラヒドロ-9-
メチル-11-オキソ-1H,5H,11H-(1)ベンゾピラノ[6,7,8-i
j]-キノリジンを混合し、発光材料を作成する。Further, for the blue light emitting layer, tris (8-hydroxyquinolinol) aluminum is used as an organic hole injecting material, and 2,3,6,7-tetrahydro-9- is used as an organic light emitting material.
Methyl-11-oxo-1H, 5H, 11H- (1) benzopyrano [6,7,8-i
j] -Quinolidine is mixed to produce a luminescent material.
【００２６】実施例１または実施例２と同様な工程で、
各々の発光層をインクジェットプリンタ装置により局所
パターニングし、アクティブマトリックス型有機ＥＬ表
示体を作成する。In the same process as in Example 1 or 2,
Each light-emitting layer is locally patterned by an ink-jet printer to form an active matrix type organic EL display.
【００２７】なお、本実施例で使用した有機ＥＬ材料以
外にも、アロマティックジアミン誘導体（ＴＤＰ）、オ
キシジアゾールダイマー（ＯＸＤ）、オキシジアゾール
誘導体（ＰＢＤ）、ジスチルアリーレン誘導体（ＤＳ
Ａ）、キノリノール系金属錯体、ベリリウム−ベンゾキ
ノリノール錯体（Ｂｅｂｑ）、トリフェニルアミン誘導
体（ＭＴＤＡＴＡ）、ジスチリル誘導体、ピラゾリンダ
イマー、ルブレン、キナクリドン、トリアゾール誘導
体、ポリフェニレン、ポリアルキルフルオレン、ポリア
ルキルチオフェン、アゾメチン亜鉛錯体、ポリフィリン
亜鉛錯体、ベンゾオキサゾール亜鉛錯体、フェナントロ
リンユウロピウム錯体が使用できるが、これに限られる
物ではない。Note that, in addition to the organic EL materials used in this example, aromatic diamine derivatives (TDP), oxydiazole dimers (OXD), oxydiazole derivatives (PBD), distyrarylene derivatives (DS)
A), quinolinol-based metal complex, beryllium-benzoquinolinol complex (Bebq), triphenylamine derivative (MTDATA), distyryl derivative, pyrazoline dimer, rubrene, quinacridone, triazole derivative, polyphenylene, polyalkylfluorene, polyalkylthiophene, azomethine A zinc complex, a porphyrin zinc complex, a benzoxazole zinc complex, and a phenanthroline europium complex can be used, but are not limited thereto.
【００２８】[0028]
【発明の効果】従来、パターニングができないとされた
有機ＥＬ材料をインクジェット方式により形成および配
列することでパターニングが可能となり、フルカラー表
示のアクティブマトリックス型有機ＥＬ表示体を実現し
た。これにより、安価で大画面のフルカラー表示体が製
造可能となり、効果は大である。According to the present invention, patterning is possible by forming and arranging an organic EL material which cannot be patterned by an ink jet method, thereby realizing an active matrix type organic EL display of full color display. As a result, an inexpensive large-screen full-color display can be manufactured, and the effect is great.
【図１】本発明の第１の実施形態におけるアクティブマ
トリックス型有機ＥＬ表示体の工程を示す図である。FIG. 1 is a view showing a process of an active matrix type organic EL display according to a first embodiment of the present invention.
【図２】本発明の第２の実施形態におけるアクティブマ
トリックス型有機ＥＬ表示体の工程を示す図である。FIG. 2 is a view showing a process of an active matrix type organic EL display according to a second embodiment of the present invention.
【図３】本発明の薄膜トランジスタ上にインクジェット
法により形成された発色層を示す図である。FIG. 3 is a diagram showing a color forming layer formed on a thin film transistor of the present invention by an ink-jet method.
１０１ ガラス基板 １０２ 薄膜トランジスタ １０３ 透明画素電極 １０４ 正孔注入層 １０５ インクジェットプリンタヘッド １０６ 有機発光層（第１色） １０７ 有機発光層（第２色） １０８ 有機発光層（第３色） １０９ 反射電極 ２０１ ガラス基板 ２０２ 薄膜トランジスタ ２０３ 反射画素電極 ２０４ 有機発光層（第１色） ２０５ 有機発光層（第２色） ２０６ 有機発光層（第３色） ２０７ インクジェットプリンタヘッド ２０８ 正孔注入層 ２０９ 透明電極 ３０１ 信号線 ３０２ ゲート線 ３０３ 画素電極 ３０４ 薄膜トランジスタ ３０５ 有機発光層（第１色） ３０６ 有機発光層（第２色） ３０７ 有機発光層（第３色） DESCRIPTION OF SYMBOLS 101 Glass substrate 102 Thin film transistor 103 Transparent pixel electrode 104 Hole injection layer 105 Inkjet printer head 106 Organic light emitting layer (1st color) 107 Organic light emitting layer (2nd color) 108 Organic light emitting layer (3rd color) 109 Reflective electrode 201 Glass Substrate 202 Thin film transistor 203 Reflective pixel electrode 204 Organic light emitting layer (first color) 205 Organic light emitting layer (second color) 206 Organic light emitting layer (third color) 207 Inkjet printer head 208 Hole injection layer 209 Transparent electrode 301 Signal line 302 Gate line 303 Pixel electrode 304 Thin film transistor 305 Organic light emitting layer (first color) 306 Organic light emitting layer (second color) 307 Organic light emitting layer (third color)
Claims (4)
形成された透明画素電極上層に正孔注入層が形成され、
この上層に少なくとも各画素毎に赤、緑、青より選択さ
れた発光色を有する有機発光層が形成され、更にこの上
層に反射電極が形成されるアクティブマトリックス型有
機ＥＬ表示体の製造方法において、前記有機発光層の形
成および配列がインクジェット方式によりなされること
を特徴とするアクティブマトリックス型有機ＥＬ表示体
の製造方法。A hole injection layer formed on a transparent pixel electrode formed on a glass substrate having a thin film transistor;
An organic light emitting layer having an emission color selected from at least red, green, and blue for each pixel is formed in the upper layer, and a reflective electrode is formed in the upper layer. A method of manufacturing an active matrix type organic EL display, wherein the formation and arrangement of the organic light emitting layer are performed by an ink jet method.
形成された透明画素電極上層に少なくとも各画素毎に
赤、緑、青より選択された発光色を有する有機発光層が
形成され、更にこの上層に反射電極が形成されるアクテ
ィブマトリックス型有機ＥＬ表示体の製造方法におい
て、前記有機発光層の形成および配列がインクジェット
方式によりなされることを特徴とするアクティブマトリ
ックス型有機ＥＬ表示体の製造方法。2. An organic light emitting layer having an emission color selected from red, green, and blue is formed at least for each pixel on an upper layer of a transparent pixel electrode formed on a glass substrate having a thin film transistor. Wherein the organic light emitting layer is formed and arranged by an ink-jet method.
形成された反射画素電極上層に少なくとも各画素毎に
赤、緑、青より選択された発光色を有する有機発光層が
形成され、この上層に正孔注入層が形成され、更にこの
上層に透明電極が形成されるアクティブマトリックス型
有機ＥＬ表示体の製造方法において、前記有機発光層の
形成および配列がインクジェット方式によりなされるこ
とを特徴とするアクティブマトリックス型有機ＥＬ表示
体の製造方法。3. An organic light emitting layer having a light emission color selected from red, green and blue is formed at least for each pixel on an upper layer of a reflective pixel electrode formed on a glass substrate having a thin film transistor, and holes are injected into the upper layer. A method of manufacturing an active matrix type organic EL display device, wherein a layer is formed and a transparent electrode is further formed on the layer, wherein the formation and arrangement of the organic light emitting layer is performed by an ink jet method. Manufacturing method of EL display.
形成された反射画素電極上層に少なくとも各画素毎に
赤、緑、青より選択された発光色を有する有機発光層が
形成され、更にこの上層に透明電極が形成されるアクテ
ィブマトリックス型有機ＥＬ表示体の製造方法におい
て、前記有機発光層の形成および配列がインクジェット
方式によりなされることを特徴とするアクティブマトリ
ックス型有機ＥＬ表示体の製造方法。4. An organic light emitting layer having an emission color selected from red, green and blue is formed at least for each pixel on an upper layer of a reflection pixel electrode formed on a glass substrate having a thin film transistor, and a transparent electrode is further formed on this upper layer. Wherein the organic light emitting layer is formed and arranged by an ink-jet method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8158671A JP3036436B2 (en) | 1996-06-19 | 1996-06-19 | Method of manufacturing active matrix type organic EL display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8158671A JP3036436B2 (en) | 1996-06-19 | 1996-06-19 | Method of manufacturing active matrix type organic EL display |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11323845A Division JP2000123975A (en) | 1999-11-15 | 1999-11-15 | Active matrix type organic EL display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1012377A true JPH1012377A (en) | 1998-01-16 |
| JP3036436B2 JP3036436B2 (en) | 2000-04-24 |
Family
ID=15676827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8158671A Expired - Lifetime JP3036436B2 (en) | 1996-06-19 | 1996-06-19 | Method of manufacturing active matrix type organic EL display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3036436B2 (en) |
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