JPH10135480A - Color display device, method of manufacturing the same, and color liquid crystal device - Google Patents

Abstract

(57) Abstract: Provided is a method for manufacturing a color display device capable of realizing reduction in manufacturing cost and improvement in yield by reducing the number of photolithography steps. SOLUTION: After a linear light-shielding body 701, 701k serving as a source line 705 and a drain electrode 708 is formed on a transparent substrate 710, a color material 702 is fixed in an opening 711 to form a color filter. Next, a transparent protective film 723 covering the color material is formed, and a polycrystalline silicon thin film 717 is formed thereon.
To form Then, after forming a polyimide film covering the source line terminals outside the pixel matrix, the gate insulating film 71 is formed.
9 is formed, and the polyimide film is removed. Next, a gate line 707 is formed over the gate insulating film. The photolithography step in the present method includes only three steps of forming a linear light-shielding body, forming a polycrystalline silicon thin film, and forming a gate electrode.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a color liquid crystal device used for devices such as personal computers, projectors, and viewfinders, a color display device constituting the color liquid crystal device, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, thin film transistors (Thin Film) made of polycrystalline silicon, amorphous silicon, etc.
Transistor, hereinafter referred to as TFT) or M
IM (Metal-Insulator-Metal)
An active matrix type liquid crystal device using a non-linear element such as an element is widely known. An example of the structure of this type of liquid crystal device, particularly, a color liquid crystal device will be described with reference to FIG.

[0003] As shown in FIG.
A liquid crystal 3 is sealed between the TFT substrate 1 and the counter substrate 2. A TFT 4 and a pixel electrode 5 are formed on the TFT substrate 1.
Are provided with a color filter 6 and a counter electrode 7. The TFT 4 includes a gate electrode 8, a gate insulating film 9, a silicon thin film 10 having a channel region, and source / drain electrodes 11 and 12.
And the pixel electrode 5 are connected. On the other hand, the color filter 6 is composed of three color materials 13 of red (R), green (G), and blue (B). Black Matrix 14 (B
and a BM (hereinafter referred to as BM). In this color liquid crystal device, the pixel electrode 5
An electric field in a direction perpendicular to the substrate, that is, a vertical electric field E1 is generated between the liquid crystal molecules 15 and the counter electrode 7, and the liquid crystal molecules 15 are rotated by the vertical electric field E1.

On the other hand, a lateral electric field method, in-plane switching (In-Plane Swi), which is particularly suitable for a large liquid crystal panel and can realize a wide viewing angle.
In recent years, attention has been paid to a color liquid crystal device of a system called “tching (hereinafter referred to as IPS)”. FIG.
(B) shows a configuration of an IPS color liquid crystal device.

In the case of the IPS system, as shown in FIG. 21B, the structures of the TFT 4 and the color filter 6 are the same as those of the conventional liquid crystal device, but the counter electrode 16 (common electrode) is used.
Is formed on the same substrate 1 side as the TFT 4, which is a great difference in configuration from the conventional liquid crystal device. In the conventional liquid crystal device, the liquid crystal molecules 15 are moved using a vertical electric field E1 in a direction perpendicular to the substrates 1 and 2. In the vertical electric field operation mode, when the liquid crystal molecules 15 are obliquely raised, the viewing angle is narrowed because the optical characteristics differ depending on the viewing angle. On the other hand, in the IPS method, a horizontal electric field E2 parallel to the TFT substrate 1 is generated between the drain electrode 12 (pixel electrode) on the TFT substrate 1 and the counter electrode 16, and the horizontal electric field E2 causes the major axis to be changed. The liquid crystal molecules 15 are rotated so as to face in a direction parallel to the TFT substrate 1. This allows
The optical characteristics do not change depending on the viewing angle, and a good image can be obtained from any direction. In the example of FIG. 21B, the counter electrode 16 is formed in the same layer as the gate electrode 8 of the TFT 4.

[0006]

For example, FIG. 21 (a)
When manufacturing the conventional general color liquid crystal device shown in
Gate electrode 8, gate insulating film 9, silicon thin film 10, pixel electrode 5, source / drain electrode 1 on TFT substrate 1.
A total of five photolithography steps are required once each for patterning 1 and 12, and the BM1 on the counter substrate 2 side is required.
4, the formation of the R, G, and B color materials 13 and the like are also combined.
A total of about 9 to 10 photolithography steps are required. In the case of the IPS type color liquid crystal device shown in FIG. 21B, the gate electrode 8 and the counter electrode 16 of the TFT 4 are formed simultaneously by one photolithography process, but the same degree of photolithography is applied to the entire liquid crystal device. A lithography step is required.

However, since the photolithography step in the liquid crystal device manufacturing process uses an expensive photomask and an exposure device, the ratio of the photolithography step to the manufacturing cost of the liquid crystal device is extremely large as compared with other steps. It is. Therefore, reducing the number of photolithography steps is an important issue for reducing the manufacturing cost of a liquid crystal device. In addition, the greater the number of photolithography steps, the higher the probability of occurrence of defects and the lower the yield of products. Therefore, a reduction in the number of photolithography steps is desired from the viewpoint of improving the yield.

The present invention has been made in view of the above circumstances, and a color display device capable of realizing a reduction in manufacturing cost and an improvement in yield by reducing the number of photolithography steps as compared with a conventional manufacturing method. And a method of manufacturing the same and a color liquid crystal device.

[0009]

Prior to the present invention, the present inventor has provided a plurality of linear light shields made of a semiconductor film such as silicon on a transparent substrate, and an opening between the plurality of linear light shields. A color liquid crystal display device has been proposed in which a color material is fixed on a transparent protective film such as a silicon oxide film and the like, and a driving element such as a TFT is formed on the transparent protective film (Japanese Patent Application No. 8-152).
696).

Therefore, the present invention aims to reduce the number of photolithography steps in the manufacturing process based on the structure of the color liquid crystal display device.

In order to achieve the above object, a color display device according to a first aspect of the present invention comprises a plurality of linear light shields formed on a transparent substrate and a plurality of linear light shields between the plurality of linear light shields. In a color display device including a color material fixed to an opening, a transparent protective film covering the color material, and a plurality of thin film transistors provided on the linear light-shielding body, the thin film transistor includes a source region and a drain region. And a gate insulating film, a source line connected to the source region, a drain electrode connected to the drain region, and a gate line, wherein the gate insulating film is formed on the transparent substrate. It is characterized by being partially removed.

According to a second aspect of the present invention, there is provided a color display device, comprising: a plurality of linear light shields formed on a transparent substrate; a color material fixed in an opening between the plurality of linear light shields;
In a color display device having a transparent protective film covering the color material and a plurality of thin film transistors provided on the linear light-shielding body, the thin film transistor has a semiconductor layer having a source region and a drain region, and a gate insulating film. ,
A source line connected to the source region, a drain electrode connected to the drain region, and a gate line;
The source region is in contact with a source-side impurity diffusion source, the drain region is in contact with a drain-side impurity diffusion source, and the source-side impurity diffusion source forms at least a part of the source line. It is.

According to a third aspect of the present invention, in the color display device of the second aspect, the source-side impurity diffusion source is a semiconductor film containing a donor or an acceptor, and the source line is formed of a semiconductor film containing a donor or an acceptor. It is characterized by comprising at least two layers of a source side impurity diffusion source and a metal.

According to a fourth aspect of the present invention, there is provided a color display device, comprising: a plurality of linear light shields formed on a transparent substrate; a color material fixed in an opening between the plurality of linear light shields;
In a color display device having a transparent protective film covering the color material and a plurality of thin film transistors provided on the linear light-shielding body, the thin film transistor has a semiconductor layer having a source region and a drain region, and a gate insulating film. ,
A source line connected to the source region, a drain electrode connected to the drain region, and a gate line;
The source region is in contact with a source-side impurity diffusion source, the drain region is in contact with a drain-side impurity diffusion source, and the gate line is formed above the semiconductor layer via the gate insulating film. Things.

According to a fifth aspect of the present invention, in the color display device according to the fourth aspect, the source-side impurity diffusion source forms at least a part of the source line, and the source line is transparent. It is characterized by being embedded with a protective film.

According to a sixth aspect of the present invention, in the color display device of the fourth or fifth aspect, the drain electrode is formed of the same layer as the gate line. It is.

According to a seventh aspect of the present invention, in the color display device of the sixth aspect, the storage capacitor line is formed in the same layer as the source line and substantially parallel to the source line. It is characterized by the following.

The color display device according to claim 8 is the color display device according to claim 7, wherein the storage capacitor line also serves as a common electrode line, and is provided between the common electrode line and the drain electrode. It is characterized in that a voltage for driving the liquid crystal is applied.

According to a ninth aspect of the present invention, there is provided a color display device comprising: a plurality of linear light shields formed on a transparent substrate; a color material fixed in an opening between the plurality of linear light shields;
In a color display device having a transparent protective film covering the color material and a plurality of thin film transistors provided on the linear light-shielding body, the thin film transistor has a semiconductor layer having a source region and a drain region, and a gate insulating film. ,
A source line connected to the source region, a drain electrode connected to the drain region, and a gate line;
The gate line is formed above the semiconductor layer via the gate insulating film, and the drain electrode is formed in the same layer as the gate line, and the source line, the gate insulating film, and the drain electrode The storage capacitor section is configured.

According to a tenth aspect of the present invention, there is provided the color display device according to the ninth aspect, wherein the capacitance of the storage capacitor portion including the source line, the gate insulating film, and the drain electrode at the own stage and the adjacent capacitor are provided. The capacitance of the storage capacitor portion including the source line, the gate insulating film, and the drain electrode is substantially equal.

The color display device according to claim 11 is the color display device according to claim 9 or 10, wherein in addition to the drain electrode, a common electrode line is formed of the same layer as the gate line, It is characterized in that a voltage for driving liquid crystal is applied between the drain electrode and the common electrode line.

A color display device according to a twelfth aspect of the present invention is the color display device according to the eleventh aspect, wherein the next-stage gate line also serves as the common electrode line.

According to a thirteenth aspect of the present invention, there is provided a color display device, comprising: a plurality of linear light shields formed on a transparent substrate; a color material fixed in an opening between the plurality of linear light shields;
In a color display device having a transparent protective film covering the color material and a plurality of thin film transistors provided on the linear light-shielding body, the thin film transistor has a semiconductor layer having a source region and a drain region, and a gate insulating film. ,
A source line connected to the source region, a drain electrode connected to the drain region, and a gate line;
The semiconductor device is characterized in that the gate line is formed above the semiconductor layer via the gate insulating film, and the drain electrode is formed in the same layer as the source line.

According to a fourteenth aspect of the present invention, in the color display device according to the thirteenth aspect, the storage capacitor line is formed of the same layer as the gate line, and the drain electrode and the gate insulating film are formed. And a storage capacitor section is constituted by the storage capacitor line.

A color display device according to a fifteenth aspect is characterized in that, in the color display device according to the fourteenth aspect, a gate line in the next stage also serves as the storage capacitance line.

A color display device according to a sixteenth aspect is the color display device according to the fourteenth aspect, wherein a common electrode line is formed in the same layer as the gate line, and the drain electrode and the common electrode line are formed. , A voltage for driving the liquid crystal is applied.

A color display device according to a seventeenth aspect of the present invention is the color display device according to the sixteenth aspect, wherein a gate line in the next stage also serves as the common electrode line.

[0028] According to a color display device of the present invention, in the color display device of the present invention, it is preferable that a gate line of the next stage also serves as both the common electrode line and the storage capacitor line. It is a feature.

A color display device according to a nineteenth aspect of the present invention provides a color display device, comprising: a plurality of linear light shields formed on a transparent substrate; a color material fixed in an opening between the plurality of linear light shields;
In a color display device having a transparent protective film covering the color material and a plurality of thin film transistors provided on the linear light-shielding body, the thin film transistor has a semiconductor layer having a source region and a drain region, and a gate insulating film. ,
A source line connected to the source region, a drain electrode connected to the drain region, and a gate line;
A source line in contact with the source region is made of a metal containing boron, and the semiconductor layer is formed above the gate line via the gate insulating film.

In the color display device according to the present invention, a plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields,
In a color display device having a transparent protective film covering the color material and a plurality of thin film transistors provided on the linear light-shielding body, the thin film transistor has a semiconductor layer having a source region and a drain region, and a gate insulating film. ,
A source line connected to the source region, a drain electrode connected to the drain region, and a gate line;
The linear light-shielding body is formed of a water-repellent conductive film, the source line is also used, and the gate line is formed above the semiconductor layer via the gate insulating film. It is.

According to a twenty-first aspect of the present invention, in the color display device according to the twentieth aspect, the surface of the linear light-shielding body made of a semiconductor film containing a donor or an acceptor has a source-side impurity diffusion source. And a lower surface of the source region is in contact with the source-side impurity diffusion source.

A color display device according to a twenty-second aspect of the present invention is the color display device according to the twenty-first aspect, wherein the linear light shield comprises at least two layers of the semiconductor film and a metal. It is.

According to a color display device described in claim 23, in the color display device according to any one of claims 20 to 22, the drain electrode is formed of the same layer as the gate line, and the source line And a storage capacitor portion is constituted by the gate insulating film and the drain electrode.

According to a color display device described in claim 24, in the color display device described in claim 23, a part of an opening between the gate line and the drain electrode is shielded by the linear light shield. It is characterized by having been done.

According to a color display device described in claim 25, in the color display device described in claim 23 or 24, in addition to the drain electrode, a common electrode line is formed of the same layer as the gate line, It is characterized in that a voltage for driving liquid crystal is applied between the drain electrode and the common electrode line.

A color display device according to a twenty-sixth aspect is characterized in that, in the color display device according to the twenty-fifth aspect, the next-stage gate line also serves as the common electrode line.

In the color display device according to a twenty-seventh aspect, in the color display device according to the twenty-sixth aspect, an electric field is applied in a direction different from a switching electric field direction between the drain electrode and the next gate line. It is characterized in that the generated spots are shielded by the linear light shield.

A color display device according to a twenty-eighth aspect of the present invention provides a color display device comprising: a plurality of linear light-shielding members formed on a transparent substrate; a color material fixed in an opening between the plurality of linear light-shielding members;
A transparent protective film covering the color material, and a color display device having a plurality of thin film transistors provided on the linear light-shielding body, wherein the thin film transistors have a semiconductor layer having a source region and a drain region, and a gate insulating film. A source line connected to the source region, a drain electrode connected to the drain region, and a gate line, wherein the linear light-shielding body is formed of a water-repellent conductive film, and the gate line is Also, the semiconductor layer is formed above the linear light-shielding body also serving as the gate line via the gate insulating film.

A color display device according to a twenty-ninth aspect is the color display device according to the twenty-eighth aspect, wherein the surface of the linear light-shielding member is made of a semiconductor film.

A color display device according to a thirtieth aspect is the color display device according to the twenty-ninth aspect, wherein the semiconductor film is a semiconductor film containing a donor or an acceptor.

A color display device according to a thirty-first aspect of the present invention is the color display device according to the thirty-third aspect, wherein the linear light shield comprises at least two layers of the semiconductor film and metal. It is.

A color display device according to a thirty-second aspect is characterized in that, in the color display device according to any one of the twenty-eighth to thirty-first aspects, the drain electrode is formed of the same layer as the source line. It is assumed that.

A color display device according to a thirty-third aspect is the color display device according to the thirty-second aspect, wherein the storage capacitor line is formed of the same layer as the gate line, and the drain electrode and the gate insulating film are formed. And a storage capacitor section is constituted by the storage capacitor line.

A color display device according to a thirty-fourth aspect is characterized in that, in the color display device according to the thirty-third aspect, the next-stage gate line also serves as the storage capacitance line.

A color display device according to a thirty-fifth aspect is the color display device according to the thirty-third aspect, wherein a common electrode line is formed in the same layer as the gate line, and the drain electrode and the common electrode line are connected to each other. During which a voltage for driving the liquid crystal is applied.

A color display device according to a thirty-sixth aspect is characterized in that, in the color display device according to the thirty-fifth aspect, a next-stage gate line also serves as the common electrode line.

In a color display device according to a thirty-seventh aspect, in the color display device according to the thirty-sixth aspect, the gate line of the next stage serves as both the common electrode line and the storage capacitor line. It is a feature.

In the color display device according to a thirty-eighth aspect, in the color display device according to any one of the thirty-second to thirty-seventh aspects, a part of an opening between the source line and the drain electrode may be partly provided with It is characterized by being shielded from light by a common electrode line.

A color display device according to a thirty-ninth aspect of the present invention is the color display device according to any one of the thirty-two to thirty-seventh aspects, wherein a part of the opening between the source line and the drain electrode is partially closed. It is characterized by being shielded from light by the next-stage gate line.

According to a color display device described in claim 40, in the color display device described in any one of claims 35 to 39, a part of the opening between the gate line and the common electrode line is It is characterized by being shielded from light by the source line or the drain electrode.

A color display device according to claim 41, further comprising: a plurality of linear light shields formed on a transparent substrate; a color material fixed in an opening between the plurality of linear light shields;
In a color display device having a transparent protective film covering the color material and a plurality of thin film transistors provided on the linear light-shielding body, the thin film transistor has a semiconductor layer having a source region and a drain region, and a gate insulating film. ,
A source line connected to the source region, a drain electrode connected to the drain region, and a gate line;
The gate line is formed above the semiconductor layer via the gate insulating film, the drain electrode is formed in the same layer as the source line, and on a source terminal provided at an end of the source line. The gate insulating film is not formed.

According to a color display device of the present invention, in the color display device of the present invention, the storage capacitor line is formed of the same layer as the gate line, and the drain electrode and the gate insulating film are formed. And a storage capacitor section is constituted by the storage capacitor line.

A color display device according to a forty-third aspect is characterized in that, in the color display device according to the forty-second aspect, the next gate line also serves as the storage capacitance line.

According to a color display device of the present invention, in the color display device of the present invention, a common electrode line is formed of the same layer as the gate line, and the drain electrode and the common electrode line are formed. , A voltage for driving the liquid crystal is applied.

A color display device according to a forty-fifth aspect is characterized in that, in the color display device according to the forty-fourth aspect, the next-stage gate line also serves as the common electrode line.

According to a color display device described in claim 46, in the color display device described in claim 45, the gate line in the next stage also serves as both the common electrode line and the storage capacitor line. It is a feature.

A color display device according to claim 47, further comprising: a plurality of linear light shields formed on a transparent substrate; a color material fixed in an opening between the plurality of linear light shields;
In a color display device having a transparent protective film covering the color material and a plurality of thin film transistors provided on the linear light-shielding body, the thin film transistor has a semiconductor layer having a source region and a drain region, and a gate insulating film. ,
A source line connected to the source region, a drain electrode connected to the drain region, and a gate line;
The linear light-shielding body is formed of a water-repellent conductive film, the gate line also serves as the source line, the gate line is formed above the semiconductor layer via the gate insulating film, and the drain electrode is formed of the source electrode. It is formed of the same layer as the line, and the gate insulating film is not formed on the source terminal provided at the end of the source line.

A color display device according to a forty-eighth aspect of the present invention is the color display device according to the forty-seventh aspect, wherein the surface of the linear light-shielding body made of a semiconductor film containing a donor or an acceptor has a source-side impurity diffusion And a lower surface of the source region is in contact with the source-side impurity diffusion source.

A color display device according to a fifty-ninth aspect is characterized in that, in the color display device according to the thirty-eighth aspect, the linear light shield comprises at least two layers of the semiconductor film and a metal. It is.

A color display device according to a fifty-second aspect of the present invention is the color display device according to any one of the thirty-seventh to forty-ninth aspects, wherein the storage capacitor line is formed of the same layer as the gate line, and the drain electrode And a storage capacitor portion including the gate insulating film and the storage capacitor line.

A color display device according to a fifty-first aspect is characterized in that, in the color display device according to the fifty-fifth aspect, a gate line at the next stage also serves as the storage capacitance line.

A color display device according to claim 52 is the color display device according to claim 50, wherein a common electrode line is formed in the same layer as the gate line, and the drain electrode and the common electrode line are formed. , A voltage for driving the liquid crystal is applied.

A color display device according to a fifty-third aspect is characterized in that, in the color display device according to the fifty-second aspect, the next-stage gate line also serves as the common electrode line.

A color display device according to a fifty-fourth aspect is characterized in that, in the color display device according to the fifty-third aspect, a gate line in the next stage serves as both the common electrode line and the storage capacitor line. It is a feature.

A color display device according to a fifty-fifth aspect of the present invention is the color display device according to the fifty-fourth aspect, wherein a part of an opening between the gate line of the current stage and the gate line of the next stage is formed by the line. Characterized by being shielded from light by a light-shielding body.

A color display device according to claim 56, further comprising: a plurality of linear light-shielding members formed on a transparent substrate; a color material fixed in an opening between the plurality of linear light-shielding members;
In a color display device having a transparent protective film covering the color material and a plurality of thin film transistors provided on the linear light-shielding body, the thin film transistor has a semiconductor layer having a source region and a drain region, and a gate insulating film. ,
A source line connected to the source region, a drain electrode connected to the drain region, and a gate line;
The linear light-shielding member is formed of a conductive film having water repellency, and also functions as the gate line, and the semiconductor layer is formed above the linear light-shielding member also serving as the gate line via the gate insulating film, The gate insulating film is not formed on a gate terminal provided at an end of the gate line.

A color display device according to a fifty-seventh aspect is characterized in that, in the color display device according to the fifty-sixth aspect, the surface of the linear light-shielding member is made of a semiconductor film.

The color display device according to claim 58 is the color display device according to claim 57, wherein the semiconductor film is a semiconductor film containing a donor or an acceptor.

A color display device according to a fifty-ninth aspect is characterized in that, in the color display device according to the fifty-eighth aspect, the linear light shield comprises at least two layers of the semiconductor film and a metal. It is.

A color display device according to claim 60 is characterized in that, in the color display device according to any one of claims 56 to 59, the drain electrode is formed of the same layer as the source line. It is assumed that.

A color display device according to claim 61 is the color display device according to claim 60, wherein the storage capacitor line is formed in the same layer as the gate line, and the drain electrode and the gate insulating film are formed. And a storage capacitor section is constituted by the storage capacitor line.

A color display device according to claim 62 is characterized in that, in the color display device according to claim 61, a gate line in the next stage also serves as the storage capacitor line.

The color display device according to claim 63 is the color display device according to claim 61, wherein a common electrode line is formed of the same layer as the gate line, and the drain electrode and the common electrode line , A voltage for driving the liquid crystal is applied.

A color display device according to a 64th aspect is the color display device according to the 63rd aspect, wherein a gate line in the next stage also serves as the common electrode line.

A color display device according to a sixty-fifth aspect of the present invention is the color display device according to the sixty-fourth aspect, wherein the gate line in the next stage also serves as both the common electrode line and the storage capacitor line. It is a feature.

A color display device according to claim 66 is the color display device according to any one of claims 60 to 65, wherein a part of the opening between the source line and the drain electrode is the same as the color display device. It is characterized by being shielded from light by a common electrode line.

The color display device according to claim 67 is the color display device according to any one of claims 60 to 65, wherein a part of the opening between the source line and the drain electrode is the same as the color display device. It is characterized by being shielded from light by the next-stage gate line.

A color display device according to claim 68 is the color display device according to any one of claims 63 to 67, wherein a part of the opening between the gate line and the common electrode line is The light source is shielded from light by the source line. A method of manufacturing a color display device according to claim 69, wherein a semiconductor film forming step of forming a semiconductor film on a transparent substrate, and the semiconductor film is patterned by photolithography and etching techniques. Forming a linear light-shielding member, forming a linear light-shielding member, fixing a color material in an opening between the plurality of linear light-shielding members, and forming a transparent protective film covering the color material. A transparent conductive film forming step of forming, a first conductive film forming step of forming a first conductive film to be a source line later on the transparent protective film, and photolithography of the first conductive film.
A source line forming step of forming a source line by patterning using an etching technique, an embedded transparent protective film forming step of forming an embedded transparent protective film for embedding the source line, and the embedded transparent protective film A semiconductor film forming step of forming a semiconductor film thereon, a semiconductor layer forming step of patterning the semiconductor film using photolithography and etching techniques to form a semiconductor layer of a predetermined shape, and a gate covering the semiconductor layer A gate insulating film forming step of forming an insulating film, a contact hole forming step of forming a contact hole communicating with the semiconductor layer by opening a part of the gate insulating film using photolithography and etching technology, A second conductive film forming step of forming a second conductive film on the gate insulating film including the inside of the contact hole, and photolithography of the second conductive film And it is characterized by having a gate line and a drain electrode formation step of forming a gate line and a drain electrode by patterning using etching techniques, a.

According to a 70th aspect of the present invention, in the method for manufacturing a color display device according to the 69th aspect, the surface of the source line is formed of a semiconductor film containing a donor or an acceptor. And a source region is formed in the semiconductor layer by diffusing a donor or an acceptor from the impurity diffusion source while making the semiconductor layer directly contact the surface of the source line. Things.

A method of manufacturing a color display device according to claim 71 is a semiconductor film forming step of forming a semiconductor film on a transparent substrate, and patterning the semiconductor film using photolithography and etching techniques. A linear light shielding body forming step of forming a plurality of linear light shielding bodies, a color material fixing step of fixing a color material to an opening between the plurality of linear light shielding bodies, and a transparent protective film covering the color material A first conductive film forming step of forming a first conductive film that will later become a source line and a drain electrode on the transparent protective film, and a first conductive film forming step of forming a first conductive film on the transparent protective film. Forming a source line and a drain electrode by patterning the film using photolithography and etching techniques to form a source line and a drain electrode; An embedded transparent protective film forming step of forming a protective film, a semiconductor film forming step of forming a semiconductor film on the embedded transparent protective film, and patterning of the semiconductor film using photolithography and etching techniques A semiconductor layer forming step of forming a semiconductor layer having a predetermined shape, a gate insulating film forming step of forming a gate insulating film covering the semiconductor layer, and photolithography and etching techniques for a part of the gate insulating film. Forming a contact hole communicating with the source line by opening using a contact hole; and forming a second contact hole on the gate insulating film including the inside of the contact hole.
A second conductive film forming step of forming a conductive film, and a gate line forming step of forming a gate line by patterning the second conductive film using photolithography and etching techniques. It is assumed that.

The method of manufacturing a color display device according to claim 72 is the method of manufacturing a color display device according to claim 71, wherein the surface of the source line and the drain electrode contains a donor or an acceptor. To form an impurity diffusion source, so that the semiconductor layer is in direct contact with the surface of the source line and the drain electrode. It is characterized by forming a region.

A method for manufacturing a color display device according to claim 73 is a semiconductor film forming step of forming a semiconductor film on a transparent substrate, and patterning the semiconductor film using photolithography and etching techniques. A linear light shielding body forming step of forming a plurality of linear light shielding bodies, a color material fixing step of fixing a color material to an opening between the plurality of linear light shielding bodies, and a transparent protective film covering the color material Forming a first conductive film to be a gate line later on the transparent protective film; and forming a first conductive film on the transparent protective film by photolithography. A source line forming step of forming a gate line by patterning using lithography and etching techniques, a gate insulating film forming step of forming a gate insulating film covering the gate line, and a semiconductor film on the gate insulating film Film A semiconductor film forming step, a semiconductor layer forming step of patterning the semiconductor film using photolithography and etching techniques to form a semiconductor layer of a predetermined shape, and a photolithography and etching technique for a part of the gate insulating film. Forming a contact hole communicating with the gate line by forming an opening by using a second conductive film forming a second conductive film on the gate insulating film including the inside of the contact hole; And a source line / drain electrode forming step of forming a source line and a drain electrode by patterning the second conductive film using photolithography and etching techniques.

The method of manufacturing a color display device according to claim 74 is the method of manufacturing a color display device according to claim 73, wherein the source line and the drain electrode are formed of a metal containing boron. A diffusion source, wherein the source line and the drain electrode are brought into direct contact with the semiconductor layer, and a source region and a drain region are formed in the semiconductor layer by diffusion of boron from the impurity diffusion source. Is what you do.

In a method of manufacturing a color display device according to a seventy-fifth aspect, a semiconductor film forming step of forming a semiconductor film on a transparent substrate, and patterning the semiconductor film using photolithography and etching techniques. A linear light-shielding body forming step of forming a plurality of linear light-shielding bodies at least partially also serving as a source line, and a color material fixing step of fixing a color material to an opening between the plurality of linear light-shielding bodies, A transparent protective film forming step of forming a transparent protective film covering the color material; a semiconductor film forming step of forming a semiconductor film on the linear light-shielding body and the transparent protective film; A semiconductor layer forming step of forming a semiconductor layer of a predetermined shape by patterning using lithography and etching techniques; a gate insulating film forming step of forming a gate insulating film covering the semiconductor layer; Forming a contact hole communicating with the semiconductor layer by opening a part of the edge film using photolithography and etching techniques; and forming a conductive film on the gate insulating film including the inside of the contact hole. A conductive film forming step of forming a film, and a gate line / drain electrode forming step of forming a gate line and a drain electrode by patterning the conductive film using photolithography and etching techniques. is there.

According to a method of manufacturing a color display device described in claim 76, in the method of manufacturing a color display device described in claim 75, the surface of the source line is formed of a semiconductor film containing a donor or an acceptor. And a source region is formed in the semiconductor layer by diffusing a donor or an acceptor from the impurity diffusion source while making the semiconductor layer directly contact the surface of the source line. Things.

In a method of manufacturing a color display device according to a 77th aspect, a semiconductor film forming step of forming a semiconductor film on a transparent substrate and patterning the semiconductor film using photolithography and etching techniques. A linear light-shielding body forming step of forming a plurality of linear light-shielding bodies at least partially also serving as a gate line, and a color material fixing step of fixing a color material to an opening between the plurality of linear light-shielding bodies, A transparent protective film forming step of forming a transparent protective film covering the linear light-shielding body and the color material, a semiconductor film forming step of forming a semiconductor film on the transparent protective film, A semiconductor layer forming step of forming a semiconductor layer of a predetermined shape by patterning using lithography and etching techniques, and a portion where the linear light-shielding body extends outside the pixel matrix region and becomes a gate line terminal A contact hole forming step of forming a contact hole communicating with the gate line terminal by opening the upper transparent protective film using photolithography and etching techniques, and forming a conductive film on the transparent protective film including the inside of the contact hole. A conductive film forming step of forming a film, and a source line / drain electrode forming step of forming a source line / drain electrode and a pad for a gate line terminal by patterning the conductive film using photolithography and etching techniques. It is characterized by the following.

The method of manufacturing a color display device according to claim 78 is the method of manufacturing a color display device according to claim 77, wherein the source line and the drain electrode are formed of a metal containing boron. A diffusion source, wherein the source line and the drain electrode are brought into direct contact with the semiconductor layer, and a source region and a drain region are formed in the semiconductor layer by diffusion of boron from the impurity diffusion source. Is what you do.

A method of manufacturing a color display device according to claim 79 is a semiconductor film forming step of forming a semiconductor film on a transparent substrate, and patterning the semiconductor film using photolithography and etching techniques. A linear light shielding body forming step of forming a plurality of linear light shielding bodies, a color material fixing step of fixing a color material to an opening between the plurality of linear light shielding bodies, and a transparent protective film covering the color material A first conductive film forming step of forming a first conductive film that will later become a source line or a drain electrode on the transparent protective film; and a first conductive film forming step of forming a first conductive film on the transparent protective film. Forming a source line or a drain electrode by patterning the film using photolithography and etching techniques, and forming a buried transparent protective film for embedding the source line and the drain electrode An embedded transparent protective film forming step, a semiconductor film forming step of forming a semiconductor film on the source line, the drain electrode and the embedded transparent protective film, and photolithography and etching of the semiconductor film. A semiconductor layer forming step of patterning and forming a semiconductor layer of a predetermined shape, and covering the portion where the source line extends outside the pixel matrix region and becomes a source line terminal, and forming a gate insulating film on this portion in the next step. A blocking film forming step of forming a blocking film for blocking film formation, a gate insulating film forming step of forming a gate insulating film covering the semiconductor layer and the linear light-shielding body,
A blocking film removing step of removing the blocking film, a second conductive film forming step of forming a second conductive film on the source line terminal and the gate insulating film, and photolithography of the second conductive film. A gate electrode forming step of forming a gate electrode and a source line terminal pad by patterning using lithography and etching techniques.

The method for manufacturing a color display device according to claim 80 is the method for manufacturing a color display device according to claim 79, wherein the surface of the source line and the drain electrode contains a donor or an acceptor. To form an impurity diffusion source, so that the semiconductor layer is in direct contact with the surface of the source line and the drain electrode, and a source region and a drain are formed in the semiconductor layer by diffusion of a donor or an acceptor from the impurity diffusion source. It is characterized by forming a region.

In the method for manufacturing a color display device according to claim 81, a semiconductor film forming step of forming a semiconductor film on a transparent substrate and patterning the semiconductor film using photolithography and etching techniques. A step of forming a plurality of linear light shields, at least a part of which serves also as a source line or a drain electrode, and fixing a color material in an opening between the plurality of linear light shields. A transparent protective film forming step of forming a transparent protective film covering the color material, a semiconductor film forming step of forming a semiconductor film on the linear light-shielding body and the transparent protective film, A semiconductor layer forming step of patterning the semiconductor film using photolithography and etching techniques to form a semiconductor layer of a predetermined shape; A blocking film forming step of forming a blocking film for covering a portion to be a line terminal and preventing the formation of a gate insulating film in this portion in the next step; and a gate insulating covering the semiconductor layer and the linear light-shielding body. A gate insulating film forming step of forming a film, a blocking film removing step of removing the blocking film,
A conductive film forming step of forming a conductive film on the source line terminal and the gate insulating film, and patterning the conductive film using photolithography and an etching technique to form a gate electrode and a source line terminal pad; Forming a gate electrode.

The method for manufacturing a color display device according to claim 82 is the method for manufacturing a color display device according to claim 81, wherein the surface of the source line and the drain electrode contains a donor or an acceptor. To form an impurity diffusion source, so that the semiconductor layer is in direct contact with the surface of the source line and the drain electrode, and a source region and a drain are formed in the semiconductor layer by diffusion of a donor or an acceptor from the impurity diffusion source. It is characterized by forming a region.

In the method of manufacturing a color display device according to the present invention, a semiconductor film forming step of forming a semiconductor film on a transparent substrate and patterning of the semiconductor film using photolithography and etching techniques. A linear light-shielding body forming step of forming a plurality of linear light-shielding bodies at least partially also serving as a gate electrode, and a color material fixing step of fixing a color material to an opening between the plurality of linear light-shielding bodies, A blocking film forming step of forming a blocking film that covers the portion where the linear light-shielding body extends outside the pixel matrix region and becomes a gate line terminal, and prevents the formation of a transparent protective film on this portion in the next step; A transparent protective film forming step of forming a transparent protective film covering the linear light-shielding body and the color material, a semiconductor film forming step of forming a semiconductor film on the transparent protective film, Lithograph A semiconductor layer forming step of forming a semiconductor layer of a predetermined shape by patterning using an etching technique; a blocking film removing step of removing the blocking film; and a conductive film on the gate line terminals and the transparent protective film. And a source line / drain electrode forming step of forming source / drain electrodes and gate line terminal pads by patterning the conductive film using photolithography and etching techniques. It is characterized by having.

In a method of manufacturing a color display device according to claim 84, in the method of manufacturing a color display device according to claim 83, the source line and the drain electrode are formed by using a metal containing boron. A diffusion source, wherein the source line and the drain electrode are brought into direct contact with the semiconductor layer, and a source region and a drain region are formed in the semiconductor layer by diffusion of boron from the impurity diffusion source. Is what you do.

The color liquid crystal device according to claim 85 is provided with a counter substrate facing the color display device according to any one of claims 1 to 68, and between the color display device and the counter substrate. The liquid crystal is sealed.

[0095]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Nine embodiments of the present invention will be described below.

The first embodiment is manufactured through five photolithography steps, and includes a top gate type TFT,
A color display device (5 photo, top gate, common electrode line independent type) having independent common electrode lines, the second embodiment is a color display device with 5 photo, top gate, common electrode line combination type, The fifth embodiment is a five-photo, top-gate, common electrode line dual-purpose (source line and drain electrode are in the same layer) color display device. The fourth embodiment is a five-photo, bottom-gate color display device. The fifth embodiment is a four-photo, top gate, common electrode line shared type color display device, the sixth embodiment is a four-photo, bottom gate, common electrode line independent color display device, the seventh embodiment. The embodiment is a four-photo, top gate, common electrode line dual-purpose (no contact hole) type color display device. The eighth embodiment is a three-photo, top gate, common electrode line dual-purpose color display device, and the ninth embodiment. Form third photo, bottom gate, the common electrode line compatible type color display device, an example of.
Further, the color display devices of all the embodiments described below are examples of the IPS type color display device.

First, the first embodiment of the present invention will be described with reference to FIGS.
This will be described with reference to FIG.

FIG. 1 is a plan view showing a pixel portion of a color display device according to the present embodiment, FIG. 2 is a sectional view of the same, and reference numeral 101 denotes a linear light shield, 102 denotes a color material, and 103 denotes a color material. A transparent protective film, 104 is a buried transparent protective film, 105 is a source line, 106 is a TFT, 107 is a gate line, 108 is a drain electrode, and 109 is a common electrode line.

Note that the color display device of this embodiment is
This corresponds to the color display device according to claims 4 to 8.

As shown in FIG. 2, a plurality of linear light shields 101 are provided on a transparent substrate 110 such as soda glass. The linear light-shielding body 101 may be assembled in a lattice shape on the surface of the substrate, and has a light-shielding ability for visible light. A plurality of linear light-shielding bodies 10 in which the surface of the transparent substrate 110 is dug down
The opening 111 between the light-transmitting portions 1 is a portion through which light passes, and the R, G, and B color materials 102 are fixed in the opening 111. Thus, a color filter including a BM for preventing color bleeding is configured. The transparent substrate 1
As the material of No. 10, in addition to soda glass, fused quartz or non-alkali glass may be used.

In the present embodiment, the linear light shielding body 101
Is composed of a semiconductor film such as an amorphous silicon film. The thickness of the semiconductor film is desirably about 1 μm or more from the viewpoint of completely shielding light. As the material of the semiconductor film, various materials such as germanium, silicon-germanium, gallium-arsenic, and the like are used in addition to silicon. Further, the state may be amorphous or crystalline, or a mixed crystal in which these are mixed. Physical properties required for the linear light-shielding body 101 of the present invention include a film thickness of 1 to 5 μm.
m, having sufficient light-shielding ability at that time, being stable to a thermal environment of about 300 to 500 ° C., and being stable to organic solvents such as acrylic and ethanol. , Good adhesion to glass,
And the like.

On the plurality of linear light-shielding bodies 101 and the color material 102, a transparent protective film 103 covering these is provided. As the transparent protective film 103, a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is used. In addition, the surface of the transparent protective film 103 is sufficiently flattened by filling the steps made of the linear light-shielding body 101, the color material 102, and the like. Then, the source line 10 is formed on the transparent protective film 103.
5 and a common electrode line 109 are provided. Note that the common electrode line 109 also serves as a storage capacitor line described later. The source line 105 and the common electrode line 109 are formed of the same layer. In this embodiment, the aluminum film 112 and the microcrystalline silicon film 1 containing an n-type impurity are used.
13 (hereinafter referred to as an n + -m-Si film, a source-side impurity diffusion source). Further, a space between the source line 105 and the common electrode line 109 is buried with a buried transparent protective film 104. Embedded transparent protective film 104
As with the transparent protective film 103, a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is used.

The TFT 106 is formed on the buried transparent protective film 104.
Are formed. The TFT 106 is a top gate nch-TFT in which a gate electrode 118 exists above a silicon thin film 117 having source / drain regions 114 and 115 and a channel region 116. A silicon thin film 117 is provided so as to be in contact with the source line 105. The n-type impurity diffusion region on the side in contact with the source line 105 is the source region 114, the n-type impurity diffusion region on the opposite side is the drain region 115, and the source-drain region. 114, 11
The space between the five is a channel region 116. Then, a gate insulating film 119 made of a silicon oxide film is formed so as to cover the silicon thin film 117, the buried transparent protective film 104, the source line 105, the common electrode line 109, and the like.
A gate electrode 118 is formed on 19. A contact hole 120 is opened in a part of the gate insulating film 119 on the drain region 115 of the silicon thin film 117, and the drain electrode 1 is formed on the gate insulating film 119.
08 is formed, and the drain electrode 108 is
20 is connected to the drain region 115. Note that the gate electrode 118 and the drain electrode 108 are formed of the same layer, and for example, an Al-Si-Cu (aluminum-silicon-copper) alloy or the like is used. As described above, FIG. 1 is a plan view showing a configuration of one pixel 121 in a pixel matrix in a color display device. As shown in this figure, in the present embodiment, a plurality of linear light shields 101 (indicated by a two-dot chain line in the figure) are assembled in a lattice shape, and adjacent openings between these linear light shields 101 are provided. 111
Are fixed with different color materials. On the linear light-shielding body 101 extending in the horizontal direction in the figure, gate electrodes 118 of a plurality of TFTs 106 arranged in the horizontal direction on the pixel matrix are arranged.
Line 107 composed of a rectangular drain electrode 10
8 are arranged. The source line 105 and the common electrode line 1 are placed on the linear light-shielding body 101 extending in the vertical direction.
09 and a part of the drain electrode 108 are arranged. Further, a portion 109a of the common electrode line 109 corresponds to the pixel 1
A voltage for driving the liquid crystal is applied between the drain electrode 108 and the common electrode line 109a during the operation of the color display device, and a so-called lateral electric field (indicated by an arrow E in the figure) is generated. It is a configuration that occurs.

In the pixel matrix, a signal voltage is applied to a plurality of source lines and a scanning voltage is sequentially applied to a plurality of gate lines to form a one-field screen. Also requires a storage capacitor for each pixel to hold a voltage for one field period even when the pixel is not selected. Therefore, in the color display device of the present embodiment, as shown in FIG.
09 also serves as a storage capacitor line, and the gate insulating film 119,
The storage capacitor portion is constituted by the common electrode line 109 and the drain electrode 108 which face each other with this interposed therebetween.

Hereinafter, a method of manufacturing the color display device having the above configuration will be described with reference to FIGS. FIG.
FIG. 4 is a process flow chart sequentially showing a method of manufacturing the color display device of the present embodiment. This method corresponds to the method of manufacturing a color display device described in claims 69 and 70, and is an example having five photolithography steps.

For example, a transparent substrate 11 made of soda glass
An amorphous silicon film (amorphous-silicon, hereinafter referred to as a-Si) having a film thickness of about 3 μm is formed on the substrate 0 by PECVD (semiconductor film forming step). Next, using a well-known photolithography technique, a photoresist pattern for forming a linear light-shielding body is formed on the a-Si film (referred to as "BM formation photo" in FIG. 3).
And then CDE (Chemical Dry Etch)
(a), the a-Si film is etched to form the linear light shield 101 (linear light shield forming step). Further, the surface of the transparent substrate 110 is also dug down by etching, and an opening 111 for fixing a color material in the next step.
To form After that, the photoresist pattern is removed.

Next, R, G, and B inks are respectively injected into the openings 111 between the plurality of linear light shields 101 using a general ink jet printer. As the ink used at this time, either a pigment-based ink or a dye-based ink can be used. Many of the components of these inks are water as a solvent, but the transparent substrate 110 is hydrophilic, a-Si
Since the film has the property of water repellency, if the amount of the ink is adjusted so that the surface of the ink is located in the transparent substrate 110, the ink is easily held in the opening 111.
Thereafter, by heating the entire substrate and drying the ink, the color material 102 having a flattened surface is formed (color material fixing step).

Next, after a liquid containing silicon is applied to the entire surface, the liquid is sintered (Spin-On-Gla).
ss, hereinafter referred to as SOG method) and a transparent protective film 10 made of a silicon oxide film covering the linear light-shielding body 101 and the color material 102.
3 is formed (transparent protective film forming step). The silicon-containing liquid (SOG liquid) used here is, for example, a polysilazane film (Poly-Silazane, P
S) can be used. Thereafter, an Al film 112 is formed on the entire surface of the transparent protective film 103 by using a sputtering method,
Then, the n + -m-Si film 11 is formed by PECVD.
3 is formed (first conductive film forming step). Then, the Al film 112 is formed by photolithography and etching.
The source line 105 and the common electrode line 109 are formed by continuously patterning the n + -m-Si film 113 (a source line forming step denoted as "source line forming photo" in FIG. 3). Next, like the transparent protective film 103, SOG
The embedded transparent protective film 104 is formed by using the
05 and the common electrode line 109 are embedded (embedded transparent protective film forming step). Thereafter, the surface of the buried transparent protective film 104 is etched to expose the surface of the n + -m-Si film 113.

Next, after an a-Si film is formed on the entire surface by using the PECVD method or the sputtering method (semiconductor film forming step), the a-Si film is subjected to laser annealing, rapid heat treatment, or the like.
The film is polycrystallized. By patterning the polycrystalline silicon film thus formed using photolithography and etching, a polycrystalline silicon thin film 117 is formed.
(A semiconductor layer forming step denoted as “poly-Si photo” in FIG. 3). The n + −m− of the source line 105 in contact with the polycrystalline silicon thin film 117 in the steps up to here.
The n-type impurity in the Si film 113 is a polycrystalline silicon thin film 11
7, the polycrystalline silicon thin film 11
7, a source region 114 and a drain region 115 are formed.

Thereafter, a gate insulating film 119 made of a silicon oxide film is formed on the entire surface by PECVD (gate insulating film forming step). Then, the polycrystalline silicon thin film 117 is formed by photolithography and etching. By opening a part of the gate insulating film 119 on the drain region 115, a contact hole 120 communicating with the drain region 115 is formed (a contact hole forming step denoted as "contact photo" in FIG. 3). Next, an Al—Si—Cu film is formed on the entire surface of the gate insulating film 119 including the inside of the contact hole 120 by using a sputtering method (second conductive film forming step). Then, the gate electrode 118, the gate line 107, and the drain electrode 108 are formed by patterning the Al—Si—Cu film using photolithography and etching (“gate line forming photo” in FIG. 3).
(Step of forming gate line / drain electrode).

According to the method of the present embodiment, as the photolithography step, the formation of the linear light-shielding body 101, the formation of the source line 105 and the common electrode line 109, the formation of the polycrystalline silicon thin film 117, and the formation of the contact hole 120 Only the five steps of forming the gate line 107 and the drain electrode 108 are required, and a color display device having a color filter can be manufactured. Therefore, a total of 9
Since the number of photolithography steps can be almost halved compared to a conventional manufacturing method that requires about 10 to 10 photolithography steps, the manufacturing cost of the liquid crystal device can be significantly reduced. Further, the yield of products can be improved by reducing the number of photolithography steps.

Hereinafter, a second embodiment of the present invention will be described with reference to FIG.

FIG. 4 is a plan view showing a pixel portion of the color display device according to the present embodiment. In FIG. 4, reference numeral 201 denotes a linear light shield, 205 denotes a source line, 206 denotes a TFT, 207 denotes a gate line, and 208 denotes a gate line. Is a drain electrode.

The color display device according to the present embodiment corresponds to the color display device according to the ninth to twelfth aspects. That is, in the first embodiment, a separate common electrode line is provided in a layer different from the drain electrode forming the IPS pair, whereas in the present embodiment, a gate line in the same layer as the drain electrode is provided. Are also provided as common electrode lines, and a common electrode line is not separately provided. In addition, the configuration, materials, and the like of the linear light-shielding body, source line, gate line, drain electrode, TFT, and the like in the present embodiment can be the same as those in the first embodiment.

As shown in FIG. 4, in the present embodiment, a plurality of linear light shields 201 are assembled in a lattice, and adjacent openings 211 between these linear light shields 201 have different colors. Color material is fixed. On the linear light-shielding body 201 extending in the horizontal direction in the drawing, a gate line 207 composed of the gate electrodes 218 of the plurality of TFTs 206 arranged in the horizontal direction on the pixel matrix and a part of a substantially U-shaped drain electrode 208 are provided. Are located. The source line 205 and part of the drain electrode 208 are arranged on the linear light-shielding body 201 extending in the vertical direction. Further, in the present color display device, the gate line 207 in the pixel matrix is scanned from the upper side to the lower side in the figure. Pixel) gate line 222
Part 222a is extended. Therefore, during operation of the color display device, a voltage for driving the liquid crystal is applied between the drain electrode 208 of the current stage and the gate line 222 of the next stage, so that a horizontal electric field E is generated.

Although a detailed description of the method of manufacturing the color display device having the above configuration is omitted, as in the first embodiment, the formation of the linear light shield, the formation of the source line, the formation of the polycrystalline silicon thin film, This requires five photolithography steps of forming a contact hole and forming a gate electrode and a drain electrode. Therefore, also in the present embodiment, the same effects as those of the first embodiment, such as reduction in manufacturing cost and improvement in product yield, can be obtained.

Further, in the case of the present embodiment, the capacitance of the storage capacitor 233 composed of the source line 205, the gate insulating film, and the drain electrode 208 of the own stage, and the capacitance of the adjacent source line 2
05a, the gate insulating film, and the adjacent storage capacitor portion 233a formed by the drain electrode 208 are designed to have substantially the same capacitance, so that the variation in capacitance caused when a signal voltage is applied to each source line is reduced. Both can cancel. As a result, when this color display device is used in a liquid crystal device, flickering of an image can be suppressed.

Further, in the case of the present embodiment, it is not necessary to separately provide a common electrode line, so that the aperture ratio can be increased as compared with the color display device of the first embodiment.

In the first and second embodiments, a contact hole is provided on a drain region of a polycrystalline silicon thin film, and a drain electrode in the same layer as a gate line is connected to the drain region through the contact hole. Although shown, the drain electrode of the same layer as the source line in contact with the lower surface of the polycrystalline silicon thin film may be embedded in the embedded transparent protective film. A third embodiment employing the structure will be described below.

FIG. 13 is a plan view showing a pixel portion of the color display device of the present embodiment, and FIG.
In the figure, reference numeral 601 denotes a linear light shield, 602 denotes a color material, 603.
Is a transparent protective film, 604 is a buried transparent protective film, 605 is a source line, 606 is a TFT, 607 is a gate line, and 608 is a drain electrode.

Note that the color display device of this embodiment is
This corresponds to the color display device according to claims 13 to 18.

As shown in FIG. 14, a plurality of linear light shields 601 made of an a-Si film are provided on a transparent substrate 610 such as soda glass. An opening 611 between a plurality of linear light shields 601 where the surface of the transparent substrate 610 is dug down is a portion through which light is transmitted.
The G and B color materials 602 are fixed. Thus, a color filter including a BM for preventing color bleeding is configured. Note that as a material of the transparent substrate 610, fused quartz, non-alkali glass, or the like may be used in addition to soda glass.

On the plurality of linear light shielding members 601 and the color material 602, a transparent protective film 603 covering them is provided. As the transparent protective film 603, a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is used. In addition, the surface of the transparent protective film 603 is sufficiently flattened by filling the steps formed of the linear light-shielding body 601 and the color material 602 and the like. Then, the source line 60 is formed on the transparent protective film 603.
5 and a drain electrode 608 are provided. The source line 605 and the drain electrode 608 are formed of the same layer, and in this embodiment, the aluminum film 61
2 and a silicon film 613 containing n-type impurities (hereinafter referred to as n +
-Si film). Also,
A buried transparent protective film 604 is buried between the source line 605 and the drain electrode 608. Similarly to the transparent protective film 603, a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is used for the embedded transparent protective film 604.

The TFT 606 is formed on the buried transparent protective film 604.
Are formed. The TFT 606 is a top gate nch-TFT in which a gate electrode 618 exists above a silicon thin film 617 having source / drain regions 614 and 615 and a channel region 616. Then, a silicon thin film 617 is provided so as to be in contact with the source line 605 and the drain electrode 608, and the n-type impurity diffusion region on the side contacting the source line 605 is formed on the source region 614 and the n-type impurity diffusion region on the side contacting the drain electrode 608 is formed A channel region 616 is formed between the drain region 615 and the source-drain regions 614 and 615. Then, the silicon thin film 617, the embedded transparent protective film 604, and the source line 60
5. A gate insulating film 619 made of a silicon oxide film is formed so as to cover the drain electrode 608 and the like.
On 9, a gate electrode 618 is formed. Note that, for the gate electrode 118, for example, an Al-Si-Cu alloy or the like is used.

In the case of the present embodiment, there is no contact hole in the pixel matrix. As will be described in detail in the section of the sixth embodiment, in a terminal portion outside the pixel matrix, a contact hole is opened in the gate insulating film 619 on the source line 605, and a source line terminal pad is provided. .

FIG. 13 is a plan view showing a configuration of one pixel in a pixel matrix in a color display device. As shown in this figure, in the present embodiment, a plurality of linear light shields 601 are assembled in a lattice, and these linear light shields 601 are formed.
Different color materials are fixed in the adjacent openings 611 between 01 and 01. A linear light shield 601 extending in the horizontal direction in the figure.
Above, a plurality of Ts arranged in the horizontal direction on the pixel matrix.
A gate line 607 including a gate electrode 618 of the FT 606
And a part of the rectangular drain electrode 608. In addition, on the linear light-shielding body 601 extending in the vertical direction,
Part of the source line 605 and part of the drain electrode 608 are provided. Further, part of the next-stage gate line 622 is
The central electrode 21 also serves as a common electrode line of this stage. Therefore, during operation of the color display device, a voltage for driving liquid crystal is applied between the drain electrode 608 and the next-stage gate line 622, so that a so-called lateral electric field E is generated.

In the case of the present embodiment, the next-stage gate line 622 also functions as a storage capacitor line together with the common electrode line, and the gate insulating film 619 and the next-stage gate line 622 opposed to each other with the gate insulating film 619 interposed therebetween. And the drain electrode 608 constitute a storage capacitor portion.

Although a detailed description of the method of manufacturing the color display device having the above configuration is omitted, in the case of the present embodiment, the formation of the linear light shield, the formation of the source line and the drain electrode, and the formation of the polycrystalline silicon thin film are performed. Five photolithography steps of formation, formation of a contact hole, and formation of a gate electrode are required. Therefore, also in this embodiment, the same effects as those of the first and second embodiments, such as a reduction in manufacturing cost and an improvement in product yield, can be obtained. The method for manufacturing a color display device according to the present embodiment corresponds to the manufacturing method described in claims 71 and 72.

Hereinafter, a fourth embodiment of the present invention will be described with reference to FIG.

FIG. 5 is a sectional view showing a pixel portion of the color display device of the present embodiment.
k is a linear light-shielding body, 302 is a color material, 323 is a transparent protective film, 306 is a TFT, 305 is a source line, and 308 is a drain electrode.

Note that the color display device of the present embodiment is
This corresponds to the color display device according to claim 19.

As shown in FIG. 5, a plurality of linear light shields 301 and 301k are provided on a transparent substrate 310 such as soda glass. Then, the R, G, and B color materials 302 are fixed in the openings 311 between the plurality of linear light-shielding bodies 301 and 301k in which the surface of the transparent substrate 310 is dug down, thereby forming a color filter. The transparent substrate 310
As a material for the above, other than soda glass, fused quartz, non-alkali glass, or the like may be used. In addition, the linear light shield 30
Reference numerals 1 and 301k are made of, for example, an a-Si film.
A transparent protective film 323 made of a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is provided on the linear light shields 301 and 301k and the color material 302.
The steps between the color materials 01 and 301k and the color material 302 are filled and flattened.

A TFT 306 is formed on the transparent protective film 323. The TFT 306 is a bottom gate type pch-TFT having a gate electrode on the lower side, and a gate electrode 3 made of a tantalum nitride film on a transparent protective film 323.
18, the gate electrode 318 and the transparent protective film 3 are formed.
23, a gate insulating film 319 covering the surface is formed.
Then, a polycrystalline silicon thin film 317 is formed thereon, and a source line 305 and a drain electrode 308 made of an Al film containing boron (hereinafter, referred to as a B-Al film) are provided on the polycrystalline silicon thin film 317. . Then, a portion of the polycrystalline silicon thin film 17 that is in contact with the B-Al film becomes a p-type impurity diffusion region.
It is a drain region 315. Also, the common electrode line 3
09 is formed in the same layer as the gate electrode 318.
Note that, similarly to the second embodiment, the common electrode line may not be separately provided, and the gate line of the next stage may also serve as the common electrode line 309. During operation of the color display device, a voltage for driving the liquid crystal is applied between the drain electrode 308 and the common electrode line 309, and a horizontal electric field E is generated.

Although a detailed description of the method of manufacturing the color display device having the above configuration is omitted, it corresponds to the manufacturing method of claims 73 and 74. That is, five photolithography steps of forming a linear light-shielding body, forming a gate electrode, forming a polycrystalline silicon thin film, forming a contact hole for conducting to the gate electrode, and forming a source line and a drain electrode are performed. It is necessary. Therefore, also in this embodiment, the same effects as those of the first and second embodiments, such as a reduction in manufacturing cost and an improvement in product yield, can be obtained.

Hereinafter, a fifth embodiment of the present invention will be described with reference to FIGS.
This will be described with reference to FIG.

FIG. 6 is a plan view showing a pixel portion of the color display device of the present embodiment, and FIG. 7 is a sectional view of the same, in which reference numerals 401 and 401k denote linear light-shielding members, 402 denotes a color material,
423 is a transparent protective film, 406 is a TFT, 407 is a gate line, and 408 is a drain electrode.

Note that the color display device of this embodiment is
This corresponds to the color display device according to claims 20 to 27.

As shown in FIG. 7, a plurality of linear light shielding bodies 401 and 401k are provided on a transparent substrate 410 such as soda glass. The R, G, and B color materials 402 are fixed in the openings 411 between the plurality of linear light-shielding bodies 401, 401k in which the surface of the transparent substrate 410 is dug down, thereby forming a color filter. The transparent substrate 410
As a material for the above, other than soda glass, fused quartz, non-alkali glass, or the like may be used. In addition, the linear light shield 40
1, 401k is, for example, a tantalum nitride (TaN) film 42
4 and an n + -m-Si film 413. On the color material 402, a transparent protective film 423 made of a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is provided, and the linear light shielding bodies 401 and 401k and the color material 402 are provided.
Is flattened by filling the step between them.

A TFT 406 is formed on the linear light shields 401 and 401 k and the transparent protective film 423. The TFT 406 is a top gate type nch-TFT, and a silicon thin film 417 is provided so as to be in contact with the linear light shields 401 and 401 k.
The portion in contact with the n + -m-Si film 413 becomes an n-type impurity diffusion region, and becomes a source region 414 and a drain region 415, respectively. And this silicon thin film 4
17, the linear light-shielding bodies 401 and 401k, the transparent protective film 4
Gate insulating film 4 made of a silicon oxide film so as to cover 23 and the like.
The gate electrode 4 is formed on the gate insulating film 419.
18 are formed. In addition, a contact hole 420 is opened in a part of the gate insulating film 419 on the drain region 415 of the silicon thin film 417, and a drain electrode 408 is formed on the gate insulating film 419. The portion is connected to the drain region 415. Note that the gate electrode 418
And the drain electrode 408 are formed of the same layer, for example, an Al film is used.

As described above, FIG. 6 is a plan view showing the configuration of one pixel in the pixel matrix in the color display device. As shown in FIG.
01, the linear light-shielding body 401k extending in the vertical direction is TF
It is in contact with the source region 414 of T406, has a function of blocking light, and also serves as a source line 405 connecting pixels arranged in a vertical direction on a pixel matrix. on the other hand,
The linear light-blocking body 401 extending in the horizontal direction has only a function of literally blocking light. In the case of the present embodiment, since the linear light shield 401k extending in the vertical direction also serves as the source line 405, the linear light shield 4 extending in the horizontal direction is provided.
01, two adjacent linear light-shielding bodies 401 extending in the vertical direction
Since the source lines 405 are short-circuited when they come into contact with k, the linear light-shielding body 401 extending in the horizontal direction and the linear light-shielding body 401k extending in the vertical direction need to be formed separately. That is, the plurality of linear light shields in the present embodiment are not in a lattice shape, and the openings 411 adjacent in the vertical direction are connected in the vertical direction by a slight gap 425. For this reason, in the case of the present embodiment, it is not possible to fix a color material 402 of a different color to the opening 411 adjacent in the vertical direction, and the color filter has a vertical stripe type.

In this embodiment, the gate insulating film 4
19 and the source line 4 of an adjacent stage opposite to the source line
05, the drain electrode 408 constitutes a storage capacitor portion. On the linear light-shielding members 401 and 401k, a gate line 407 composed of gate electrodes 418 of a plurality of TFTs 406 arranged in a horizontal direction on a pixel matrix, and a drain electrode 408
Is arranged. Here, the self-stage drain electrode 408
The gate line 422 at the next stage and the gate line 422 at the next stage have a comb blade shape, and are arranged so as to mesh with each other. And
As in the second embodiment, during operation of the color display device, a voltage for driving liquid crystal is applied between the drain electrode 408 of the current stage and the gate line 422 of the next stage, so that a horizontal electric field E is generated. ing. A horizontal electric field E is generated in a large part of the opening 411 in a direction indicated by an arrow E in the figure.
, A lateral electric field is generated in a direction different from the arrow E, for example, in the direction of the arrow E ′. In that case, the direction of the liquid crystal molecules changes only in this part, and color unevenness occurs,
A linear light shield 401 is provided to prevent color unevenness.

Hereinafter, a method of manufacturing the color display device having the above configuration will be described with reference to FIGS. FIG.
FIG. 4 is a process flow chart sequentially showing a method of manufacturing the color display device of the present embodiment. This method corresponds to the method of manufacturing a color display device described in claims 75 and 76, and is an example having four photolithography steps.

For example, a transparent substrate 41 made of soda glass
Then, a tantalum nitride film 424 having a thickness of 2 μm is formed on the substrate 0 using a sputtering method, and then a tantalum nitride film 424 is formed using a PECVD method.
A μm n + -m-Si film 413 (semiconductor film) is formed (semiconductor film formation step). Next, using a well-known photolithography technique, a photoresist pattern for forming the linear light-shielding members 401 and 401 k is formed by using the n + -m-Si film 41.
8 (referred to as "BM and source line forming photo" in FIG. 8), and then n + -m-Si film 41 is formed by using the CDE method.
3. The continuous etching of the tantalum nitride film 424 is performed, and the linear light-shielding bodies 401 and 401k which partially serve as the source lines 405 are also provided.
Is formed (linear light shielding body forming step). Further, the surface of the transparent substrate 410 is dug down by 1 μm by wet etching using hydrofluoric acid to form an opening 411 for fixing a color material in the next step. After that, the photoresist pattern is removed.

Next, an opening 41 between a plurality of linear light shielding members 401 and 401k is formed by using a general ink jet printer.
R, G, and B inks are respectively injected into 1. As the ink used at this time, either a pigment-based ink or a dye-based ink can be used. Thereafter, by heating the entire substrate and drying the ink, a color material 402 having a flattened surface is formed (color material fixing step).

Next, after forming a laminated film of a 1 μm-thick PSG film and a 2 μm-thick intrinsic polysilazane film covering the linear light-shielding members 401 and 401 k and the color material 402, light etching is performed. Light shields 401, 40
The laminated film on 1k is removed, and a transparent protective film 423 covering only the color material 402 is formed (transparent protective film forming step). After that, a 500-nm thick a-S
After forming the i-film (semiconductor film forming step), laser annealing is performed to polycrystallize the a-Si film. The polycrystalline silicon film thus formed is patterned by photolithography and etching to form a polycrystalline silicon thin film 417 (“poly-Si thin film in FIG. 8”).
A semiconductor layer forming step). The n + −m− in contact with the polycrystalline silicon thin film 417 in the steps up to here.
The n-type impurity in the Si film 413 is
7, the polycrystalline silicon thin film 41 is diffused.
7, a source region 414 and a drain region 415 are formed.

Thereafter, a gate insulating film 419 made of a silicon oxide film having a thickness of 1200 ° is formed on the entire surface by PECVD (gate insulating film forming step), and then polycrystalline by photolithography and etching. Gate insulating film 4 on drain region 415 of silicon thin film 417
By opening a part of the drain region 19, the drain region 415 is opened.
Is formed (contact hole forming step, which is referred to as “contact photo” in FIG. 8). next,
An Al film having a thickness of 1 μm is formed on the entire surface of the gate insulating film 419 including the inside of the contact hole 420 by using a sputtering method (conductive film forming step). And photolithography,
A gate line 407 (gate electrode 418) and a drain electrode 408 are formed by patterning the Al film by using an etching method (a gate line / drain electrode forming step denoted as “gate line forming photo” in FIG. 8).

In the method of the present embodiment, the linear light
Since 1k also serves as the source line 405 and eliminates an independent common electrode line, the number of photolithography steps is reduced by one compared with the manufacturing method of the first embodiment, and the linear light-shielding member 401,
A color display device can be manufactured only by four photolithography steps of forming 401k, forming a polycrystalline silicon thin film 417, forming a contact hole 420, and forming a gate line 407 and a drain electrode 408. . Therefore, in the present embodiment, the above-described first to fifth aspects such as reduction of manufacturing cost and improvement of product yield are achieved.
The effects of the fourth embodiment can be further enhanced.

Hereinafter, the sixth embodiment of the present invention will be described with reference to FIGS.
This will be described with reference to FIG.

FIG. 9 is a plan view showing a pixel portion of the color display device according to the present embodiment, and FIG. 11 is a sectional view of the same, wherein reference numerals 501 and 501k denote linear light-shielding members, 502 denotes a color material, 523 is a transparent protective film, 506 is a TFT, 505 is a source line, and 508 is a drain electrode.

Note that the color display device of this embodiment is
It corresponds to the color display device according to claims 28 to 32, 35, 38, 40.

As shown in FIG. 11, a plurality of linear light shields 501 and 501k are provided on a transparent substrate 510 such as soda glass. The R, G, and B color materials 502 are fixed in the openings 511 between the plurality of linear light-shielding bodies 501, 501k in which the surface of the transparent substrate 510 is dug down, thereby forming a color filter. The transparent substrate 51
As the material of zero, fused quartz, non-alkali glass, or the like may be used in addition to soda glass. In addition, the linear light shield 5
01 and 501k are, for example, a tantalum nitride film 524 and n +
It has a laminated structure of the −m-Si film 513. A transparent protective film 523 made of a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is provided on the linear light shields 501 and 501k and the color material 502.
The steps between the color materials 01 and 501k and the color material 502 are filled and flattened.

The TFT 506 is configured to include these linear light shielding members 501 and 501k and a part of the transparent protective film 523. That is, the TFT 506 is a bottom gate type pch-TFT having a gate electrode on the lower side, and a part of the linear light shield 501k also serves as the gate electrode 518, and the transparent light shield 501k located on the linear light shield 501k. Protective film 5
Reference numeral 23 also functions as the gate insulating film 519. Then, a polycrystalline silicon thin film 517 is formed thereon, and a source line 505 made of a B-Al film is formed on the polycrystalline silicon thin film 517.
And a drain electrode 508 are provided.
The portion in contact with the film is a p-type impurity diffusion region, which is a source region 514 and a drain region 515, respectively.
Further, the other linear light shielding body 501 also serves as the common electrode line 509. As described above, FIG. 9 is a plan view showing the configuration of one pixel in the pixel matrix in the color display device. As shown in this figure, one linear light shield 501k extending in the horizontal direction among a plurality of linear light shields also serves as the gate electrode 518 of the TFT 506 described above. Are the gate lines 507 connecting the pixels arranged in a row. Another linear light-shielding body 501 extending in the horizontal direction also serves as the common electrode line 509, and has a portion 509a extending in the vertical direction at the center of the pixel 521. These linear light shields 501,
On 501k, source lines 505 of a plurality of TFTs 506 arranged in a vertical direction on a pixel matrix and a substantially rectangular drain electrode 508 are arranged. During operation of the color display device, the drain electrode 508 and the common electrode line 50 are connected.
9, a voltage for driving the liquid crystal is applied, and a horizontal electric field E is generated.

Also, as shown in FIG.
The opening between the drain electrode 508 and the common electrode line 509
And the opening between the gate line 507 and the common electrode line 509 is shielded from light by the source line 505 or the drain electrode 508, so that light leakage is prevented. In the present embodiment, the common electrode line 509 also serves as a storage capacitor line, and a storage capacitor portion is constituted by the gate insulating film 519, the common electrode line 509 and the drain electrode 508 opposed to each other with the gate insulating film 519 interposed therebetween. .

FIG. 10 is a diagram showing a terminal portion outside the pixel matrix. The ends of the gate line 507 and the common electrode line 509 are connected to rectangular terminals 526 and 52, respectively.
7, contact holes 528 and 529 are opened in the transparent protective film 523 thereon. On the common electrode line terminal 527, a common potential supply line 530 formed of the same layer as the source line 505 and the drain electrode 508 is provided, and is connected to the common electrode line 509 at a contact hole 528. . A gate line terminal pad 5 formed of the same layer as the source line 505 and the drain electrode 508 is provided on the gate line terminal 526.
31 are provided.

Hereinafter, a method of manufacturing the color display device having the above configuration will be described with reference to FIGS. FIG.
FIG. 3 is a process flow chart illustrating a method of manufacturing the color display device according to the present embodiment in order. This method corresponds to the method of manufacturing a color display device described in claims 77 and 78, and is an example having four photolithography steps.

For example, a transparent substrate 51 made of soda glass
Then, a tantalum nitride film 524 having a thickness of 2 μm is formed on the substrate 0 by sputtering, and then a tantalum nitride film 524 is formed by PECVD.
A μm n + -m-Si film 513 (semiconductor film) is formed (semiconductor film formation step). Here, n + −m−S
The i film 513 is formed in order to impart water repellency to the linear light-shielding member, and the n + -m-Si film 513 is not necessarily provided if it can be controlled in the next ink injection step. Next, using a known photolithography technology, a photoresist pattern for forming a linear light
After being formed on the −m-Si film 513 (referred to as “BM and gate line forming photo” in FIG. 12), n +
The m-Si film 513 and the tantalum nitride film 524 are continuously etched to form the gate electrode 518 or the common electrode line 5.
The linear light-shielding bodies 501 and 501k also serving as 09 are formed (linear light-shielding body forming step). Further, the surface of the transparent substrate 510 is dug down by wet etching using hydrofluoric acid to form an opening 511 for fixing a color material in the next step. After that, the photoresist pattern is removed.

Next, using an ordinary ink jet printer, the opening 5 between the plurality of linear light-shielding members 501 and 501k is formed.
R, G, and B inks are respectively injected into 11. As the ink used at this time, either a pigment-based ink or a dye-based ink can be used. Thereafter, by heating the entire substrate and drying the ink, a color material 502 having a flattened surface is formed (color material fixing step).

Next, a laminated film of a 1 μm-thick PSG film and a 2 μm-thick intrinsic polysilazane film covering the linear light-shielding members 501 and 501 k and the color material 502 is formed, and is formed on the linear light-shielding member 501 k. Portion is gate insulating film 519
Is formed (transparent protective film forming step). Then, a-Si is formed on the entire surface by PECVD.
After forming the film (semiconductor film forming step), laser annealing is performed to polycrystallize the a-Si film. The polycrystalline silicon film thus formed is patterned by photolithography and etching to form a polycrystalline silicon thin film 517 (“poly-Si” in FIG. 12).
A semiconductor layer forming step).

Thereafter, the gate line terminal 52 outside the pixel matrix is formed by photolithography and etching.
6 and the transparent protective film 523 on the common electrode line terminal 527
Then, contact holes 528 and 529 are opened (contact hole forming step denoted as “contact photo” in FIG. 12).
Next, the contact holes 528 and 529 are formed by sputtering.
A 1 μm-thick B-Al film is formed on the entire surface including the inside (conductive film forming step). Then, the source line 505, the drain electrode 508, the common potential supply line 530, the pad 531 for the gate line terminal, and the like are formed by patterning the B-Al film using the photolithography and the etching method. Source / drain electrode forming photo). Thereafter, boron is diffused into a portion of the polycrystalline silicon thin film 517 in contact with the B-Al film to form a p-type impurity diffusion region.
14, a drain region 515 is formed.

In the method of the present embodiment, the linear light
1, 501k is the gate line 507 or the common electrode line 509
, The number of photolithography steps is reduced by one compared with the manufacturing method of the first embodiment,
1, 501k, polycrystalline silicon thin film 517, contact holes 528, 529, source line 50
The color display device can be manufactured only by four photolithography steps of 5 and the formation of the drain electrode 508. Therefore, also in the present embodiment, the same effects as those of the fifth embodiment, such as a reduction in manufacturing cost and an improvement in product yield, can be obtained.

In the sixth embodiment, the common electrode line 509 also serves as a storage capacitor line. However, instead of this configuration, the same layer as the gate line 507, that is, the linear light-shielding member 5 is used.
Independent storage capacitance lines may be formed by 01 and 501k, or the next-stage gate line may also serve as the storage capacitance line. Further, the common electrode line 509 is provided separately from the gate line 507. However, instead of this configuration, the next-stage gate line may also serve as the common electrode line. It may be configured to serve as both the common electrode line and the storage capacitor line. Note that these color display devices correspond to the color display devices described in claims 33, 34, 36, 37, and 39.

Hereinafter, a seventh embodiment of the present invention will be described with reference to FIG.
3. Description will be given with reference to FIG.

FIG. 13 is a plan view showing a pixel portion of the color display device of the present embodiment, and FIG.
In the figure, reference numeral 601 denotes a linear light shield, 602 denotes a color material, 603.
Is a transparent protective film, 604 is a buried transparent protective film, 605 is a source line, 606 is a TFT, 607 is a gate line, and 608 is a drain electrode. Note that the structure of the pixel portion of the color display device of this embodiment is the same as that of the color display device of the third embodiment. Further, the color display device according to the present embodiment corresponds to the color display device described in claims 41, 43, 45, and 46.

As shown in FIG. 14, a plurality of linear light shields 601 made of an a-Si film are provided on a transparent substrate 610 such as soda glass. An opening 611 between a plurality of linear light shields 601 where the surface of the transparent substrate 610 is dug down is a portion through which light is transmitted.
The G and B color materials 602 are fixed. Thus, a color filter including a BM for preventing color bleeding is configured. Note that as a material of the transparent substrate 610, fused quartz, non-alkali glass, or the like may be used in addition to soda glass.

On the plurality of linear light-shielding members 601 and the color material 602, a transparent protective film 603 covering these is provided. As the transparent protective film 603, a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is used. In addition, the surface of the transparent protective film 603 is sufficiently flattened by filling the steps formed of the linear light-shielding body 601 and the color material 602 and the like. Then, the source line 60 is formed on the transparent protective film 603.
5 and a drain electrode 608 are provided. The source line 605 and the drain electrode 608 are formed of the same layer, and in this embodiment, the aluminum film 61
2 and a silicon film 613 containing n-type impurities (hereinafter referred to as n +
-Si film). Also,
A buried transparent protective film 604 is buried between the source line 605 and the drain electrode 608. Similarly to the transparent protective film 603, a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is used for the embedded transparent protective film 604.

A TFT 606 is formed on the embedded transparent protective film 604.
Are formed. The TFT 606 is a top gate nch-TFT in which a gate electrode 618 exists above a silicon thin film 617 having source / drain regions 614 and 615 and a channel region 616. Then, a silicon thin film 617 is provided so as to be in contact with the source line 605 and the drain electrode 608, and the n-type impurity diffusion region on the side contacting the source line 605 is formed on the source region 614 and the n-type impurity diffusion region on the side contacting the drain electrode 608 is formed A channel region 616 is formed between the drain region 615 and the source-drain regions 614 and 615. Then, the silicon thin film 617, the embedded transparent protective film 604, and the source line 60
5. A gate insulating film 619 made of a silicon oxide film is formed so as to cover the drain electrode 608 and the like.
On 9, a gate electrode 618 is formed. Note that, for the gate electrode 118, for example, an Al-Si-Cu alloy or the like is used.

In the case of the present embodiment, there is no contact hole in the pixel matrix. Further, there is no contact hole in the terminal portion outside the pixel matrix as described in the section of the sixth embodiment, and on the source line terminal formed at the end of the source line extending outside the pixel matrix,
A source line terminal pad made of the same Al-Si-Cu alloy as the gate electrode is directly formed (not shown).

FIG. 13 is a plan view showing a configuration of one pixel in a pixel matrix in a color display device. As shown in this figure, in the present embodiment, a plurality of linear light shields 601 are assembled in a lattice, and these linear light shields 601 are formed.
Different color materials are fixed in the adjacent openings 611 between 01 and 01. A linear light shield 601 extending in the horizontal direction in the figure.
Above, a plurality of Ts arranged in the horizontal direction on the pixel matrix.
A gate line 607 including a gate electrode 618 of the FT 606
And a part of the rectangular drain electrode 608. In addition, on the linear light-shielding body 601 extending in the vertical direction,
Part of the source line 605 and part of the drain electrode 608 are provided. Further, part of the next-stage gate line 622 is
The central electrode 21 also serves as a common electrode line of this stage. Therefore, during operation of the color display device, a voltage for driving liquid crystal is applied between the drain electrode 608 and the next-stage gate line 622, so that a so-called lateral electric field E is generated.

In the case of the present embodiment, the next-stage gate line 622 also serves as a storage capacitor line together with the common electrode line, and the gate insulating film 619 and the next-stage gate line 622 opposed to each other with the gate insulating film 619 interposed therebetween. And the drain electrode 608 constitute a storage capacitor portion.

Although a detailed description of the method of manufacturing the color display device having the above-described configuration is omitted, in the case of the present embodiment, the linear light-shielding member and the source line are separate from each other, as in the first embodiment. Since it is composed of layers, the number of photolithography steps is increased by one in the step of forming a linear light-shielding member as compared with the fifth embodiment. However, since the contact hole does not exist in this color display device, one photolithography step for forming the contact hole is reduced. Therefore, the method for manufacturing a color display device according to the present embodiment requires four photolithography steps as a result. The method for forming no contact hole will be described in detail in the following eighth and ninth embodiments.

In this embodiment, the gate line 622 of the next stage is configured to serve as both the common electrode line and the storage capacitor line. However, the common electrode line and the storage capacitor line independent of each other in the same layer as the gate line. May be provided. Note that these color display devices correspond to the color display devices described in claims 42 and 44.

Hereinafter, the eighth embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIGS.

FIG. 15 is a plan view showing a pixel portion of the color display device according to the present embodiment, and FIG.
In the figure, reference numerals 701 and 701k denote linear light shielding members, 702 denotes a color material, 723 denotes a transparent protective film, 706 denotes a TFT, 705 denotes a source line, and 707 denotes a gate line.

Note that the color display device of this embodiment is
It corresponds to the color display device according to claims 47 to 49, 51, 53, 54, 55.

As shown in FIG. 16, a plurality of linear light shields 701, 70 are placed on a transparent substrate 710 made of soda glass or the like.
1k is provided. The R, G, and B color materials 702 are fixed in the openings 711 between the plurality of linear light-shielding bodies 701, 701k in which the surface of the transparent substrate 710 is dug down, thereby forming a color filter. In addition, as a material of the transparent substrate 710, in addition to soda glass, fused quartz, non-alkali glass, or the like may be used. Further, the linear light-shielding members 701 and 701k are, for example, a tantalum nitride film 724.
And an n + -m-Si film 713. A transparent protective film 723 made of a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is provided on the color material 702, and a step between the linear light-shielding members 701 and 701k and the color material 702 is filled. It has been flattened.

A TFT 706 is formed on the linear light shields 701 and 701k and the transparent protective film 723. The TFT 706 is a top gate type nch-TFT, and a silicon thin film 717 is provided so as to be in contact with the linear light-shielding members 701 and 701k.
Are in contact with the n + -m-Si film of the source region 714 and the drain region 7, respectively.
It is 15. In this embodiment, the linear light shield 701 also serves as the source line 705, and the linear light shield 701k also serves as the drain electrode 708. Then, a gate insulating film 719 made of a silicon oxide film is formed so as to cover the silicon thin film 717, the linear light shields 701 and 701k, the transparent protective film 723, and the like.
A gate electrode 718 made of an l-Si-Cu film is formed. In the case of the present embodiment, there is no contact hole in the pixel matrix. Further, there is no contact hole in the terminal portion outside the pixel matrix as described in the section of the sixth embodiment, and on the source line terminal formed at the end of the source line extending outside the pixel matrix, A source line terminal pad made of the same Al-Si-Cu film as the gate electrode is directly formed (not shown).

FIG. 15 is a plan view showing the configuration of one pixel in a pixel matrix in a color display device. As shown in this drawing, of the plurality of linear light shields, a linear light shield 701 extending in the vertical direction also serves as a source line 705, and a rectangular linear light shield 701k is a drain electrode 708. It also serves as. A gate line 707 extends in the horizontal direction of the pixel matrix.
A gate line 7 of the next stage also serving as a common electrode line is provided at the center of 21.
22 is extended. During the operation of the color display device, a voltage for driving the liquid crystal is applied between the drain electrode 708 of the current stage and the gate line 722 of the next stage, and the horizontal electric field E
Is generated. A source line 705 and a drain electrode 70 are provided in the upper right part of each pixel 721 in the figure.
8, there is a region where neither of the gate lines 707 exists,
In this area, the linear light shield 7 for preventing light leakage is provided.
A light-shielding body 701a made of the same layer as that of the light-shielding member 01, 701k is provided.

Further, in the case of this embodiment, the next-stage gate line 722 also serves as a storage capacitor line together with the common electrode line, and the gate insulating film 719 and the next-stage gate line 722 opposed to each other with the gate insulating film 719 interposed therebetween. And the drain electrode 708 constitute a storage capacitor portion.

Hereinafter, a method of manufacturing the color display device having the above configuration will be described with reference to FIGS. FIG.
FIG. 7 is a process flow chart sequentially showing a method of manufacturing the color display device of the present embodiment. In addition, this method
This corresponds to the method of manufacturing a color display device according to claims 81 and 82, and is an example having three photolithography steps.

For example, a transparent substrate 71 made of soda glass
0, a film thickness of 2 μm and a specific resistance of 0.3
A 6Ω / □ tantalum nitride film 724 is formed, followed by PE
An n + -m-Si film 713 (semiconductor film) having a thickness of 2000 .ANG. Is formed by a CVD method (semiconductor film formation step).
The thickness of the n + -m-Si film 713 is 10
It can be in the range of about 00 to 4000 °. After that, RTA annealing at a temperature of 700 ° C. (substrate temperature of 290 ° C.) for about 1 second may be performed. Next, using a well-known photolithography technique, a photoresist pattern for forming a linear light-shielding body is formed on the n + -m-Si film 713 (referred to as "BM and source line formation photo" in FIG. 17). The n + -m-Si film 713 and the tantalum nitride film 724 are successively etched by using the CDE method,
05 or a linear light shielding body 70 also serving as a drain electrode 708
1 and 701k are formed (linear light shielding body forming step). Further, the surface of the transparent substrate 710 is dug down by 2 μm by wet etching using 1:30 hydrofluoric acid to form an opening 711 for fixing a color material in the next step. afterwards,
The photoresist pattern is removed.

Next, using an ordinary ink-jet printer, the opening 7 between the plurality of linear light-shielding members 701 and 701k is formed.
R, G, and B inks are respectively injected into 11. As the ink used at this time, either a pigment-based ink or a dye-based ink can be used. Thereafter, by heating the entire substrate and drying the ink, a color material 702 having a flattened surface is formed (color material fixing step).

Next, a laminated film of a 1 μm-thick PSG film and a 1 μm-thick intrinsic polysilazane film (NSG film) covering the linear light-shielding bodies 701 and 701 k and the color material 702 is formed. C. H2O-O2 annealing is performed to improve the quality of the underlying PSG film. After that, a 2 μm-thick NSG film is further formed, and H 2 O—O 2 annealing is performed at a temperature of 250 ° C. to form a transparent protective film having a total thickness of 4 μm. Next, light-etching using 1:30 hydrofluoric acid is performed to remove the laminated film on the linear light-shielding members 701 and 701k, and a transparent protective film 723 covering only the color material 702 is formed.
Is formed (transparent protective film forming step).

Next, after forming an m-Si film having a thickness of 500 ° on the entire surface by using PECVD at a temperature of 290 ° C. (semiconductor film forming step), a Kr film having an energy of 220 mJ / cm 2 was formed.
The m-Si film is polycrystallized by performing F laser annealing.
At this time, RTA annealing may be performed in addition to laser annealing, or RTA annealing may be performed instead of laser annealing. At this time, the RTA annealing is performed at a temperature of 700 ° C. (substrate temperature of 290 ° C.) for about 1 second. Then, the polycrystalline silicon film thus formed is patterned by photolithography and etching to form a polycrystalline silicon thin film 717 (semiconductor layer forming step denoted as "poly-Si photo" in FIG. 17). . The n + -m- of the linear light-shielding bodies 701 and 701k in contact with the polycrystalline silicon thin film 717 in the steps up to this point.
The Si film 713 serves as an impurity diffusion source, and an n-type impurity therein diffuses into the polycrystalline silicon thin film 717, so that a source region 714 and a drain region 715 are formed in the polycrystalline silicon thin film 717.

Next, a polyimide film (blocking film) is applied to a region outside the pixel matrix where the source line terminal is formed. This polyimide film is a film for preventing a gate insulating film in the next step from being formed in this region (blocking film forming step). As a specific method for applying the polyimide film, it may be applied using, for example, a brush dipped in a polyimide melt. And TEO at a temperature of 290 ° C
Using a S-PECVD method, a silicon oxide film covering the surface of the polycrystalline silicon thin film 717, the linear light-shielding bodies 701 and 701k, and the transparent protective film 723 is formed except for the region where the polyimide film is formed. The film 719 is formed (gate insulating film forming step). Next, after removing the polyimide film (blocking film removing step), a film thickness of 1
An Al—Si—Cu film having a thickness of μm and a specific resistance of 30 mΩ / □ is formed (conductive film forming step). Then, a gate line 707 and a pad for a source line terminal are formed by patterning the Al-Si-Cu film using photolithography and an etching method (see FIG. 17, “gate line forming photo”; Process).

In the method of the present embodiment, the linear light
1, 701k are the source line 705 and the drain electrode 70
8, the number of photolithography steps is reduced by one compared with the manufacturing method of the first embodiment, and a contact hole is formed by using a polyimide film for preventing the formation of a gate insulating film at a terminal part in an intermediate step. Is unnecessary, and the number of photolithography steps is further reduced by one. As a result, the formation of the linear light-shielding members 701 and 701k, the polycrystalline silicon thin film 71
The color display device can be manufactured only by three photolithography steps of forming the gate line 7 and forming the gate line 707. Therefore, according to the present embodiment, it is possible to further improve the same effects as those of the above-described embodiment, such as reduction in manufacturing cost and improvement in product yield.

Further, as described above, since the processing temperature throughout the entire process is 290 ° C. or less, color display can be performed without any trouble using inexpensive soda glass without using an expensive fused quartz substrate or the like as a transparent substrate. A device can be made. Therefore, in addition to reducing the number of photolithography steps, it is possible to further reduce the manufacturing cost by the effect of using soda glass.

In this embodiment, the gate line 722 at the next stage is configured to serve as both the common electrode line and the storage capacitor line. However, the common electrode line and the storage capacitor line independent of each other in the same layer as the gate line are used. May be provided. These color display devices correspond to the color display devices described in claims 50 and 52.

Hereinafter, a ninth embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIG.

FIG. 18 is a plan view showing a pixel portion of the color display device according to the present embodiment, and FIG.
In the figure, reference numerals 801 and 801k denote linear light shields, 802 denotes a color material, 823 denotes a transparent protective film, 806 denotes a TFT, 805 denotes a source line, and 807 denotes a gate line.

Note that the color display device of this embodiment is
It corresponds to the color display device according to claims 56 to 60, 62, 64, 65, 67, 39.

As shown in FIG. 19, a plurality of linear light shields 801 and 80 are placed on a transparent substrate 810 made of soda glass or the like.
1k is provided. Then, R, G, and B color materials 802 are fixed in the openings 811 between the plurality of linear light-shielding bodies 801 and 801k in which the surface of the transparent substrate 810 is dug down to form a color filter. Note that as a material of the transparent substrate 810, fused quartz, non-alkali glass, or the like may be used in addition to soda glass. Further, the linear light-shielding bodies 801 and 801k are, for example, a tantalum nitride film 824.
And an n + -m-Si film 813. On linear light shields 801 and 801k and color material 802
A transparent protective film 823 made of a silicon-containing inorganic compound such as a silicon oxide film or a silicon nitride film is provided thereon, and the step between the linear light-shielding bodies 801 and 801 k and the color material 802 is flattened. ing.

The TFT 806 is configured to include the linear light-shielding body 801 and a part of the transparent protective film 823.
That is, this TFT 806 is a bottom gate type pch
A TFT, and the linear light-shielding body 801 is a gate electrode 818;
The transparent protective film 823 located on the linear light-shielding body 801 also functions as the gate insulating film 819, and the polycrystalline silicon thin film 817 is formed thereon. A source line 805 and a drain electrode 808 made of a B-Al film are provided on the polycrystalline silicon thin film 817.
Portions of the polycrystalline silicon thin film 817 which are in contact with the B-Al film become p-type impurity diffusion regions, and
4, a drain region 815. Also, in the case of this embodiment, as in the eighth embodiment, there is no contact hole in the terminal portion inside and outside the pixel matrix, and it is formed at the end of the gate line extending outside the pixel matrix. A gate line terminal pad made of the same B-Al film as the source line and the drain electrode is directly formed on the gate line terminal (not shown).

As described above, FIG. 18 is a plan view showing a configuration of one pixel in a pixel matrix in a color display device. As shown in this figure, a gate line 807 extends in the horizontal direction of the pixel matrix, and a gate line 822 of the next stage also serving as a common electrode line extends in the center of each pixel 821. On the linear light-shielding bodies 801 and 801 k also serving as the gate lines 807 and 822, source lines 805 of a plurality of TFTs 806 arranged in a vertical direction on a pixel matrix and a substantially rectangular drain electrode 808 are arranged. Then, during operation of the color display device, a voltage for driving liquid crystal is applied between the drain electrode 808 of the current stage and the gate line 822 of the next stage, so that a horizontal electric field E is generated.

In the case of the present embodiment, the next-stage gate line 822 also serves as a storage capacitor line together with the common electrode line, and the gate insulating film 819 and the next-stage gate line 822 opposed to each other with the gate insulating film 819 interposed therebetween. And the drain electrode 808 constitute a storage capacitor. Further, in order to prevent light leakage, the source line 805 and the gate line 822 also extend to portions that are unnecessary for their original functions, and function as a light shield. In other words, the source line 805 shields the opening between the gate line 807 of the current stage and the gate line 822 of the next stage, which constitute the IPS, and the gate line 822 of the next stage forms the source line 805
The opening between the gate electrode and the drain electrode 808 is shielded from light.

Hereinafter, a method of manufacturing the color display device having the above configuration will be described with reference to FIGS. FIG.
0 is a process flow chart showing the method for manufacturing the color display device of the present embodiment in order. In addition, this method
This corresponds to the method of manufacturing a color display device according to claims 83 and 84, and is an example having three photolithography steps.

For example, a transparent substrate 81 made of soda glass
A tantalum nitride film 824 is formed on the substrate 0 using a sputtering method, and then an n + -m-Si film 813 (semiconductor film) is formed using a PECVD method (semiconductor film forming step).
Next, using a well-known photolithography technique, a photoresist pattern for forming a linear light-shielding body is formed into n + -m-S
After being formed on the i film 813 (referred to as “BM and gate line forming photo” in FIG. 20), n + −m−S
The i-film 813 and the tantalum nitride film 824 are continuously etched, and the linear light shielding body 80 serving as the gate lines 807 and 822 is also formed.
1, 801k is formed (linear light shielding body forming step). Further, the surface of the transparent substrate 810 is dug down by wet etching using hydrofluoric acid, and an opening 811 for fixing a color material is formed in the next step. After that, the photoresist pattern is removed.

Next, using a general ink-jet printer, the opening 8 between the plurality of linear light-shielding members 801 and 801k is formed.
R, G, and B inks are respectively injected into 11. As the ink used at this time, either a pigment-based ink or a dye-based ink can be used. Thereafter, by heating the entire substrate and drying the ink, a color material 802 having a flattened surface is formed (color material fixing step).

Next, a polyimide film (blocking film) is applied to a region outside the pixel matrix where the gate line terminal is formed. This polyimide film is a film for preventing a transparent protective film in the next step from being formed in this region (blocking film forming step). Then, an SOG film is formed in a region excluding the region where the polyimide film is formed, and a portion covering the linear light-shielding body 801 is formed as a transparent protective film 823 also serving as a gate insulating film 819 (transparent protective film forming step). Thereafter, an m-Si film is formed on the entire surface by using the PECVD method (semiconductor film forming step), and then the laser annealing is performed to polycrystallize the m-Si film. Then, the polycrystalline silicon film thus formed is patterned by photolithography and etching to form a polycrystalline silicon thin film 817 (semiconductor layer forming step denoted as "poly-Si photo" in FIG. 20). .

Next, after removing the polyimide film (blocking film removing step), a B-Al film is formed on the entire surface by sputtering (conductive film forming step). Then, the source line 805 and the drain electrode 80 are patterned by patterning the B-Al film using photolithography and etching.
8. Form a pad for a gate line terminal and the like (source line / drain electrode forming step denoted as "source line forming photo" in FIG. 20). Then, the B-Al of the polycrystalline silicon thin film 817 is formed.
Boron diffuses into a portion in contact with the film to form a p-type impurity diffusion region, and a source region 814 and a drain region 815 are formed.

Also in the method of the present embodiment, similar to the eighth embodiment, the linear light-shielding bodies 801 and 801k also serve as the gate lines 807 and 822, so that the method is different from the manufacturing method of the first embodiment. One less photolithography process,
The use of a polyimide film for preventing the formation of the transparent protective film at the terminal portion in the intermediate step further reduces the number of photolithography steps for forming contact holes by one. As a result, the formation of the linear light shields 801 and 801 k and the polycrystalline silicon thin film 817
Formation, formation of the source line 805 and the drain electrode 808,
The color display device can be manufactured only by the three photolithography steps. Therefore,
In this embodiment, the same effects as those of the eighth embodiment, such as a reduction in manufacturing cost and an improvement in product yield, can be obtained.

In the present embodiment, the gate line 822 of the next stage is configured to serve as both the common electrode line and the storage capacitor line. However, the common line and the storage capacitor line independent of each other in the same layer as the gate line. May be provided. When an independent common electrode line is provided, an opening between a source line and a drain electrode is shielded from light by a common electrode line, and an opening between a gate line and a common electrode line is shielded from light by a source line. Good. These color display devices are described in claims 61, 63, 66, 6
8 corresponds to the color display device described in FIG.

The technical scope of the present invention is not limited to the above embodiment, and various changes can be made without departing from the spirit of the present invention. For example, all of the above embodiments have been described with reference to the example of the IPS type color display device. However, the present invention is not limited to the IPS type, and the number of photolithography steps is increased by one compared with the IPS type. A common electrode may be provided to form a vertical electric field type color display device. Further, specific numerical values such as the thickness of various films constituting the color display device,
The specific manufacturing conditions and the like in each manufacturing process are not limited to the above-described embodiment, and it is needless to say that the design can be appropriately changed.

Further, in the color display devices of all the above embodiments, a counter substrate is disposed so as to face the color display device, and liquid crystal is sealed between the color display device and the counter substrate to thereby provide a color liquid crystal device. Can be produced. The color liquid crystal device can be applied to various devices such as a personal computer, a projector, and a viewfinder.

An electronic apparatus constructed using the color display device of the above-described embodiment has a display information output source 10 shown in FIG.
00, display information processing circuit 1002, display drive circuit 100
4, a display panel 1006 such as a liquid crystal panel, a clock generation circuit 1008, and a power supply circuit 1010. The display information output source 1000 includes a memory such as a ROM or a RAM, a tuning circuit that tunes and outputs a television signal, and the like, and outputs display information such as a video signal based on a clock from a clock generation circuit 1008. I do. The display information processing circuit 1002 includes a clock generation circuit 1
The display information is processed and output based on the clock from 008. The display information processing circuit 1002 can include, for example, an amplification / polarity inversion circuit, a phase expansion circuit, a rotation circuit, a gamma correction circuit, a clamp circuit, and the like. The display driving circuit 1004 includes a scanning side driving circuit and a data side driving circuit, and drives the liquid crystal panel 1006 for display. The power supply circuit 1010 supplies power to each of the above circuits.

An electronic apparatus having such a configuration includes a liquid crystal projector, a personal computer (PC) and an engineering workstation (EWS) compatible with multimedia shown in FIG. 23, a pager shown in FIG. 24, or a mobile phone, a word processor, and a television. , Viewfinder type or monitor direct view type video tape recorder,
Electronic organizer, electronic desk calculator, car navigation device,
Examples include a POS terminal and a device having a touch panel.

The personal computer 12 shown in FIG.
00 is a main body 1204 having a keyboard 1202
And a liquid crystal display screen 1206.

The pager 1300 shown in FIG. 24 includes a liquid crystal display substrate 1304, a light guide 1306 having a backlight 1306a, a circuit board 1308, and first and second shield plates 1310 and 13 in a metal frame 1302.
12, two elastic conductors 1314 and 1316, and a film carrier tape 1318. Two elastic conductors 1314 and 1316 and film carrier tape 13
Reference numeral 18 denotes a connection between the liquid crystal display substrate 1304 and the circuit board 1308.

Here, the liquid crystal display substrate 1304 has liquid crystal sealed between two transparent substrates 1304a and 1304b, thereby forming at least a dot matrix type liquid crystal display panel. On one transparent substrate, FIG.
Or a display information processing circuit 1002 in addition to the above. Circuits not mounted on the liquid crystal display substrate 1304 are external circuits of the liquid crystal display substrate, and can be mounted on the circuit substrate 1308 in the case of FIG.

FIG. 24 shows the configuration of the pager, and therefore requires a circuit board 1308 in addition to the liquid crystal display substrate 1304. However, this is a case where a liquid crystal display device is used as one component for electronic equipment. When a display driving circuit or the like is mounted on a transparent substrate, the minimum unit of the liquid crystal display device is the liquid crystal display substrate 1304. Alternatively, a structure in which the liquid crystal display substrate 1304 is fixed to a metal frame 1302 serving as a housing can be used as a liquid crystal display device which is one component for electronic devices. Further, in the case of a backlight type, a liquid crystal display substrate 1304 and a light guide 1306 provided with a backlight 1306a can be incorporated in a metal frame 1302 to constitute a liquid crystal display device.

Note that the present invention is not limited to the above-described embodiment, and various modifications can be made within the scope of the present invention. For example, the present invention is not limited to being applied to the driving of the above-described various liquid crystal panels, but is also applicable to electroluminescence and plasma display devices.

[0211]

As described above in detail, according to the present invention, a color filter or a TFT is formed on a single transparent substrate.
And the linear light-shielding body of the color filter also serves as a source line, a gate line, and the like.
The number of photolithography steps during the manufacturing process can be greatly reduced to 3 to 5 times as compared with the conventional manufacturing method requiring about 10 to 10 photolithography steps. As a result, the manufacturing cost of the color liquid crystal device can be significantly reduced, and the product yield can be improved.

[Brief description of the drawings]

FIG. 1 is a plan view showing a pixel of a color display device according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is a process flow chart showing a method for manufacturing a color display device.

FIG. 4 is a plan view illustrating a pixel of a color display device according to a second embodiment of the present invention.

FIG. 5 is a sectional view of a color display device according to a fourth embodiment of the present invention.

FIG. 6 is a plan view showing a pixel of a color display device according to a fifth embodiment of the present invention.

FIG. 7 is a sectional view of FIG. 6;

FIG. 8 is a process flow chart showing a method for manufacturing a color display device.

FIG. 9 is a plan view illustrating a pixel of a color display device according to a sixth embodiment of the present invention.

FIG. 10 is a plan view showing a terminal portion of the color display device.

FIG. 11 is a sectional view of FIG. 9;

FIG. 12 is a process flow chart showing a method for manufacturing a color display device.

FIG. 13 is a plan view showing a pixel of the color display device according to the third and seventh embodiments of the present invention.

FIG. 14 is a sectional view of FIG.

FIG. 15 is a plan view showing a pixel of a color display device according to an eighth embodiment of the present invention.

FIG. 16 is a sectional view of FIG.

FIG. 17 is a process flow chart showing a method for manufacturing a color display device.

FIG. 18 is a plan view illustrating a pixel of a color display device according to a ninth embodiment of the present invention.

FIG. 19 is a sectional view of FIG. 18;

FIG. 20 is a process flow chart showing a method for manufacturing a color display device.

21A shows a vertical electric field method, and FIG. 21B shows a horizontal electric field method (I
FIG. 11 is a cross-sectional view showing a conventional color liquid crystal device (PS system).

FIG. 22 is a diagram illustrating an electronic apparatus using the color display device of the invention.

FIG. 23 is a diagram illustrating a personal computer using the color display device of the present invention.

FIG. 24 is a diagram showing a pager using the color display device of the present invention.

[Description of Signs] 101, 201, 301, 301k, 401, 401
k, 501, 501k, 601, 701, 701k, 8
01,801k Linear light-shielding body 102,302,402,502,602,702,8
02 color material 103,323,423,523,60
3,723,823 Transparent protective film 104,604 Embedded transparent protective film 105,205,205a, 305,405,505,
605, 705, 805 Source line 106, 206, 306, 406, 506, 606, 7
06,806 Thin film transistors 107,207,307,407,507,607,7
07,807 Gate line 108,208,308,408,508,608,7
08,808 Drain electrode 109,309,509 Common electrode line 110,310,410,510,610,710,8
10 Transparent substrate 111, 211, 311, 411, 511, 611, 7
11,811 opening 113,413,513,613,713,813 n
+ -M-Si film (source-side impurity diffusion source) 114, 314, 414, 514, 614, 714, 8
14 Source region 115,315,415,515,615,715,8
15 Drain region 117, 317, 417, 517, 617, 717, 8
17 Silicon thin film (semiconductor layer) 118, 218, 318, 418, 518, 618, 7
18,818 Gate electrode 120,420,528,529 Contact hole 121,221,421,521,621,721,8
21 pixel 222, 422, 622, 722, 822 next-stage gate line 233, 233a storage capacitor 424, 524, 724, 824 tantalum nitride film (conductive film) 526 gate line terminal 531 gate line terminal pad

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 29/78 616S 626C

Claims (85)

[Claims] A plurality of linear light-shielding members formed on a transparent substrate; a color material fixed in an opening between the plurality of linear light-shielding members; a transparent protective film covering the color material; In a color display device including a plurality of thin film transistors provided on a linear light-shielding body, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source line connected to the source region. A drain electrode connected to the drain region; and a gate line, wherein the gate insulating film is partially removed on the transparent substrate. 2. A plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields, a transparent protective film covering the color material, In a color display device including a plurality of thin film transistors provided on a linear light-shielding body, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source line connected to the source region. A drain electrode connected to the drain region, a gate line, the source region is in contact with the source-side impurity diffusion source, the drain region is in contact with the drain-side impurity diffusion source, and the source-side impurity diffusion source is A color display device comprising at least a part of the source line. 3. The color display device according to claim 2, wherein the source-side impurity diffusion source is a semiconductor film containing a donor or an acceptor, and the source line is at least two layers of the source-side impurity diffusion source and a metal. A color display device comprising: 4. A plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields, a transparent protective film covering the color material, In a color display device including a plurality of thin film transistors provided on a linear light-shielding body, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source line connected to the source region. A drain electrode connected to the drain region and a gate line, the source region being in contact with a source-side impurity diffusion source, the drain region being in contact with a drain-side impurity diffusion source, and the gate line being a gate insulating layer. A color display device formed above the semiconductor layer via a film. 5. The color display device according to claim 4, wherein the source-side impurity diffusion source forms at least a part of the source line, and the source line is embedded with a transparent protective film. Color display device. 6. The color display device according to claim 4, wherein the drain electrode is formed in the same layer as the gate line. 7. The color display device according to claim 6, wherein the storage capacitor line is formed in the same layer as the source line and substantially parallel to the source line. 8. The color display device according to claim 7, wherein the storage capacitor line also serves as a common electrode line, and a voltage for driving liquid crystal is applied between the common electrode line and the drain electrode. A color display device having a configuration. 9. A plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields, a transparent protective film covering the color material, In a color display device including a plurality of thin film transistors provided on a linear light-shielding body, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source line connected to the source region. A drain electrode connected to the drain region, and a gate line, wherein the gate line is formed above the semiconductor layer via the gate insulating film, and the drain electrode is the same as the gate line. A color display device, comprising: a source layer; a gate insulating film; and a drain electrode; 10. The color display device according to claim 9, wherein a capacitance of a storage capacitor portion including a source line, a gate insulating film, and a drain electrode in a self-stage and a source line, a gate insulating film, and a drain electrode adjacent thereto are provided. Wherein the storage capacitors have substantially the same capacity. 11. The color display device according to claim 9, wherein a common electrode line is formed in the same layer as the gate line in addition to the drain electrode, and between the drain electrode and the common electrode line. A color display device, wherein a voltage for driving liquid crystal is applied. 12. The color display device according to claim 11, wherein a gate line at the next stage also serves as said common electrode line. 13. A plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields, a transparent protective film covering the color material, In a color display device including a plurality of thin film transistors provided on a linear light-shielding body, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source line connected to the source region. A drain electrode connected to the drain region, and a gate line, wherein the gate line is formed above the semiconductor layer via the gate insulating film, and the drain electrode is formed of the same layer as the source line. A color display device formed. 14. The color display device according to claim 13, wherein the storage capacitance line is formed in the same layer as the gate line, and a storage capacitance portion is formed by the drain electrode, the gate insulating film, and the storage capacitance line. A color display device characterized by being performed. 15. The color display device according to claim 14, wherein a gate line at the next stage also serves as the storage capacitor line. 16. The color display device according to claim 14, wherein a common electrode line is formed in the same layer as the gate line, and a voltage for driving a liquid crystal between the drain electrode and the common electrode line. Is applied to the color display device. 17. The color display device according to claim 16, wherein a next-stage gate line also serves as said common electrode line. 18. The color display device according to claim 17, wherein a gate line at the next stage also serves as both the common electrode line and the storage capacitor line. 19. A plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields, a transparent protective film covering the color material, In a color display device including a plurality of thin film transistors provided on a linear light-shielding body, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source line connected to the source region. A drain electrode connected to the drain region, a gate line, a source line in contact with the source region is made of a metal containing boron, and the semiconductor layer is above the gate line via the gate insulating film. A color display device formed on a substrate. 20. A plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields, a transparent protective film covering the color material, In a color display device including a plurality of thin film transistors provided on a linear light-shielding body, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source line connected to the source region. A drain electrode connected to the drain region, and a gate line, wherein the linear light-shielding body is formed of a water-repellent conductive film, and also serves as the source line, and the gate line is the gate insulating film. A color display device formed above the semiconductor layer via a transparent substrate. 21. The color display device according to claim 20, wherein a surface of the linear light-shielding body made of a semiconductor film containing a donor or an acceptor also functions as a source-side impurity diffusion source, and a lower surface of the source region is the source. A color display device being in contact with a side impurity diffusion source. 22. The color display device according to claim 21, wherein the linear light shield comprises at least two layers of the semiconductor film and a metal. 23. The color display device according to claim 20, wherein the drain electrode is formed of the same layer as the gate line, and is held by the source line, the gate insulating film, and the drain electrode. A color display device comprising a capacitance unit. 24. The color display device according to claim 23, wherein a part of an opening between the gate line and the drain electrode is shielded by the linear light shield. . 25. The color display device according to claim 23, wherein a common electrode line is formed in the same layer as the gate line in addition to the drain electrode, and between the drain electrode and the common electrode line. A color display device, wherein a voltage for driving liquid crystal is applied. 26. The color display device according to claim 25, wherein a gate line at the next stage also serves as said common electrode line. 27. The color display device according to claim 26, wherein a portion where an electric field is generated in a direction different from a switching electric field direction between the drain electrode and the next gate line is shielded by the linear light shield. A color display device. 28. A plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields, a transparent protective film covering the color material, In a color display device including a plurality of thin film transistors provided on a linear light-shielding body, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source line connected to the source region. A drain electrode connected to the drain region, and a gate line, wherein the linear light-shielding body is formed of a conductive film having water repellency, and also serves as the gate line, and the semiconductor layer is the gate insulating film. A color display device formed above a linear light-shielding body also serving as the gate line via a gate. 29. The color display device according to claim 28, wherein the surface of the linear light-shielding member is made of a semiconductor film. 30. The color display device according to claim 29, wherein the semiconductor film is a semiconductor film containing a donor or an acceptor. 31. The color display device according to claim 30, wherein the linear light shield comprises at least two layers of the semiconductor film and a metal. 32. The color display device according to claim 28, wherein the drain electrode is formed in the same layer as the source line. 33. The color display device according to claim 32, wherein the storage capacitance line is formed in the same layer as the gate line, and a storage capacitance portion is formed by the drain electrode, the gate insulating film, and the storage capacitance line. A color display device characterized by being performed. 34. The color display device according to claim 33, wherein a gate line at the next stage also serves as said storage capacitor line. 35. The color display device according to claim 33, wherein a common electrode line is formed in the same layer as the gate line, and a voltage for driving liquid crystal is provided between the drain electrode and the common electrode line. A color display device characterized in that a voltage is applied. 36. The color display device according to claim 35, wherein a next gate line also serves as said common electrode line. 37. The color display device according to claim 36, wherein a gate line at the next stage serves as both the common electrode line and the storage capacitor line. 38. The color display device according to claim 32, wherein a part of an opening between the source line and the drain electrode is shielded from light by the common electrode line. Color display device. 39. The color display device according to claim 32, wherein a part of an opening between the source line and the drain electrode is shielded from light by the next gate line. Characteristic color display device. 40. The color display device according to claim 35, wherein a part of an opening between the gate line and the common electrode line is shielded from light by the source line or the drain electrode. A color display device characterized by the above-mentioned. 41. A plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields, a transparent protective film covering the color material, In a color display device including a plurality of thin film transistors provided on a linear light-shielding body, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source line connected to the source region. A drain electrode connected to the drain region, and a gate line, wherein the gate line is formed above the semiconductor layer via the gate insulating film, and the drain electrode is formed of the same layer as the source line. A color display device formed, wherein the gate insulating film is not formed on a source terminal provided at an end of the source line. 42. The color display device according to claim 41, wherein the storage capacitance line is formed in the same layer as the gate line, and a storage capacitance portion is formed by the drain electrode, the gate insulating film, and the storage capacitance line. A color display device characterized by being performed. 43. The color display device according to claim 42, wherein a gate line at the next stage also serves as said storage capacitor line. 44. The color display device according to claim 42, wherein a common electrode line is formed in the same layer as the gate line, and a voltage for driving a liquid crystal between the drain electrode and the common electrode line. Is applied to the color display device. 45. The color display device according to claim 44, wherein the next-stage gate line also serves as the common electrode line. 46. The color display device according to claim 45, wherein a gate line at the next stage also serves as both the common electrode line and the storage capacitor line. 47. A plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields, a transparent protective film covering the color material, In a color display device including a plurality of thin film transistors provided on a linear light-shielding body, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source line connected to the source region. A drain electrode connected to the drain region, and a gate line, wherein the linear light-shielding body is formed of a water-repellent conductive film, and also serves as the source line, and the gate line is the gate insulating film. A drain electrode is formed in the same layer as the source line, and the gate terminal is provided on a source terminal provided at an end of the source line. Color display device, wherein an insulating film is not formed. 48. The color display device according to claim 47, wherein a surface of the linear light-shielding body made of a semiconductor film containing a donor or an acceptor also functions as a source-side impurity diffusion source, and a lower surface of the source region is the source. A color display device being in contact with a side impurity diffusion source. 49. The color display device according to claim 48, wherein said linear light shield comprises at least two layers of said semiconductor film and metal. 50. The color display device according to claim 47, wherein the storage capacitor line is formed in the same layer as the gate line, and the storage capacitor line includes the drain electrode, the gate insulating film, and the storage capacitor line. A color display device comprising a storage capacitor unit. 51. The color display device according to claim 50, wherein a gate line at the next stage also serves as said storage capacitor line. 52. The color display device according to claim 50, wherein a common electrode line is formed in the same layer as the gate line, and a voltage for driving a liquid crystal between the drain electrode and the common electrode line. Is applied to the color display device. 53. The color display device according to claim 52, wherein a gate line at the next stage also serves as the common electrode line. 54. The color display device according to claim 53, wherein a gate line at the next stage also serves as both the common electrode line and the storage capacitor line. 55. The color display device according to claim 54, wherein a part of an opening between a gate line of the current stage and the gate line of the next stage is shielded from light by the linear light shield. Color display device. 56. A plurality of linear light shields formed on a transparent substrate, a color material fixed in an opening between the plurality of linear light shields, a transparent protective film covering the color material, In a color display device including a plurality of thin film transistors provided on a linear light-shielding body, the thin film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film, and a source line connected to the source region. A drain electrode connected to the drain region, and a gate line, wherein the linear light-shielding body is formed of a conductive film having water repellency, and also serves as the gate line, and the semiconductor layer is the gate insulating film. It is characterized in that the gate insulating film is not formed on a gate terminal formed at the end of the gate line, which is formed above the linear light-shielding body also serving as the gate line via Color display device according to. 57. The color display device according to claim 56, wherein the surface of the linear light-shielding member is made of a semiconductor film. 58. The color display device according to claim 57, wherein the semiconductor film is a semiconductor film containing a donor or an acceptor. 59. The color display device according to claim 58, wherein said linear light shield comprises at least two layers of said semiconductor film and metal. 60. The color display device according to claim 56, wherein the drain electrode is formed in the same layer as the source line. 61. The color display device according to claim 60, wherein the storage capacitance line is formed in the same layer as the gate line, and a storage capacitance portion is formed by the drain electrode, the gate insulating film, and the storage capacitance line. A color display device characterized by being performed. 62. The color display device according to claim 61, wherein a gate line at the next stage also serves as said storage capacitor line. 63. The color display device according to claim 61, wherein a common electrode line is formed in the same layer as the gate line, and a voltage for driving a liquid crystal between the drain electrode and the common electrode line. Is applied to the color display device. 64. The color display device according to claim 63, wherein a gate line at the next stage also serves as said common electrode line. 65. The color display device according to claim 64, wherein a gate line at the next stage also serves as both the common electrode line and the storage capacitor line. 66. The color display device according to claim 60, wherein a part of an opening between the source line and the drain electrode is shielded from light by the common electrode line. Color display device. 67. The color display device according to claim 60, wherein a part of an opening between the source line and the drain electrode is shielded from light by the next gate line. Characteristic color display device. 68. The color display device according to claim 63, wherein a part of an opening between the gate line and the common electrode line is shielded from light by the source line. Color display device. 69. A semiconductor film formation step of forming a semiconductor film on a transparent substrate, and the semiconductor film is formed by photolithography,
A linear light-shielding body forming step of forming a plurality of linear light-shielding bodies by patterning using an etching technique; a color material fixing step of fixing a color material to an opening between the plurality of linear light-shielding bodies; A transparent protective film forming step of forming a transparent protective film covering the color material; a first conductive film forming step of forming a first conductive film that will later become a source line on the transparent protective film; Forming a source line by patterning the first conductive film using photolithography and etching techniques; and forming a buried transparent protective film for burying the source line. A semiconductor film forming step of forming a semiconductor film on the buried transparent protective film; and a semiconductor layer forming step of patterning the semiconductor film using photolithography and etching techniques to form a semiconductor layer of a predetermined shape. Forming a gate insulating film for covering the semiconductor layer; forming a gate insulating film covering the semiconductor layer; and contacting the semiconductor layer by opening a part of the gate insulating film using photolithography and etching techniques. A contact hole forming step of forming a hole, a second conductive film forming step of forming a second conductive film on the gate insulating film including the inside of the contact hole, photolithography of the second conductive film, A method for manufacturing a color display device, comprising: a gate line / drain electrode forming step of forming a gate line and a drain electrode by patterning using an etching technique. 70. The method of manufacturing a color display device according to claim 69, wherein the surface of the source line is formed of a semiconductor film containing a donor or an acceptor to serve as an impurity diffusion source.
A method for manufacturing a color display device, wherein the semiconductor layer is brought into direct contact with the surface of the source line, and a source region is formed in the semiconductor layer by diffusion of a donor or an acceptor from the impurity diffusion source. 71. A semiconductor film forming step for forming a semiconductor film on a transparent substrate, and a linear light shielding for forming a plurality of linear light shielding members by patterning the semiconductor film using photolithography and etching techniques. A body forming step, a color material fixing step of fixing a color material in an opening between the plurality of linear light shielding bodies, a transparent protective film forming step of forming a transparent protective film covering the color material, A first conductive film forming step of forming a first conductive film to be a source line and a drain electrode later on the protective film, and patterning the first conductive film using photolithography and etching techniques. A source line / drain electrode forming step of forming a source line and a drain electrode; an embedded transparent protective film forming step of forming an embedded transparent protective film for embedding the source line and the drain electrode; A semiconductor film forming step of forming a semiconductor film on the buried transparent protective film; a semiconductor layer forming step of patterning the semiconductor film using photolithography and etching techniques to form a semiconductor layer having a predetermined shape; A gate insulating film forming step of forming a gate insulating film covering the semiconductor layer; and a contact for forming a contact hole communicating with the source line by opening a part of the gate insulating film using photolithography and etching techniques. A hole forming step, a second conductive film forming step of forming a second conductive film on the gate insulating film including the inside of the contact hole, and forming the second conductive film using photolithography and etching techniques. A method for manufacturing a color display device, comprising a step of forming a gate line by patterning. 72. The method for manufacturing a color display device according to claim 71, wherein the surfaces of the source line and the drain electrode are formed of a semiconductor film containing a donor or an acceptor to serve as an impurity diffusion source, and these source lines are formed. And a source region and a drain region are formed in the semiconductor layer by diffusion of a donor or an acceptor from the impurity diffusion source. Method. 73. A semiconductor film forming step of forming a semiconductor film on a transparent substrate, and the semiconductor film is formed by photolithography.
A linear light-shielding body forming step of forming a plurality of linear light-shielding bodies by patterning using an etching technique; a color material fixing step of fixing a color material to an opening between the plurality of linear light-shielding bodies; A transparent protective film forming step of forming a transparent protective film covering the color material; a first conductive film forming step of forming a first conductive film to be a gate line later on the transparent protective film; A source line forming step of forming a gate line by patterning the first conductive film using photolithography and an etching technique; a gate insulating film forming step of forming a gate insulating film covering the gate line; A semiconductor film formation step of forming a semiconductor film on the gate insulating film; a semiconductor layer formation step of patterning the semiconductor film using photolithography and etching techniques to form a semiconductor layer of a predetermined shape; Forming a contact hole communicating with the gate line by opening a part of the gate insulating film by using photolithography and etching techniques; and forming a second contact hole on the gate insulating film including the inside of the contact hole. Forming a second conductive film, and forming a source line and a drain electrode by patterning the second conductive film using photolithography and etching techniques. A method for manufacturing a color display device, comprising: 74. The method of manufacturing a color display device according to claim 73, wherein the source line and the drain electrode are formed of a metal containing boron to serve as an impurity diffusion source. A method for manufacturing a color display device, comprising: bringing a semiconductor layer into direct contact with each other; and forming a source region and a drain region in the semiconductor layer by diffusing boron from the impurity diffusion source. 75. A semiconductor film forming step of forming a semiconductor film on a transparent substrate, and the semiconductor film is formed by photolithography.
A step of forming a plurality of linear light shields, at least a portion of which also serves as a source line, by patterning using an etching technique; and fixing a color material in an opening between the plurality of linear light shields. Fixing a color material, forming a transparent protective film covering the color material, forming a transparent protective film, and forming a semiconductor film on the linear light-shielding body and the transparent protective film. A semiconductor layer forming step of patterning the semiconductor film using photolithography and etching techniques to form a semiconductor layer having a predetermined shape; and a gate insulating film forming step of forming a gate insulating film covering the semiconductor layer. A contact hole forming step of forming a contact hole communicating with the semiconductor layer by opening a part of the gate insulating film using photolithography and an etching technique; A conductive film forming step of forming a conductive film on the gate insulating film including the inside of the contact hole; and a gate line for forming a gate line and a drain electrode by patterning the conductive film using photolithography and an etching technique. A method of manufacturing a color display device, comprising: a step of forming a drain electrode. 76. The method for manufacturing a color display device according to claim 75, wherein the surface of the source line is formed of a semiconductor film containing a donor or an acceptor to serve as an impurity diffusion source,
A method for manufacturing a color display device, wherein the semiconductor layer is brought into direct contact with the surface of the source line, and a source region is formed in the semiconductor layer by diffusion of a donor or an acceptor from the impurity diffusion source. 77. A semiconductor film forming step of forming a semiconductor film on a transparent substrate, and patterning the semiconductor film using photolithography and etching techniques to form a plurality of linear lines at least partially serving also as gate lines. A linear light-shielding body forming step of forming a light-shielding body, a color material fixing step of fixing a color material in an opening between the plurality of linear light-shielding bodies, and a transparent protective film covering the linear light-shielding body and the color material A semiconductor film forming step of forming a semiconductor film on the transparent protective film, and a semiconductor having a predetermined shape by patterning the semiconductor film using photolithography and etching techniques. A semiconductor layer forming step of forming a layer, and photolithography and etching of the transparent protective film on a portion where the linear light-shielding body extends outside the pixel matrix region and becomes a gate line terminal. Forming a contact hole communicating with the gate line terminal by opening using a contacting technique; and forming a conductive film on the transparent protective film including the inside of the contact hole. A source line / drain electrode forming step of forming a source line / drain electrode and a pad for a gate line terminal by patterning the conductive film using photolithography and etching techniques. Production method. 78. The method of manufacturing a color display device according to claim 77, wherein the source line and the drain electrode are formed of a metal containing boron to serve as an impurity diffusion source. A method for manufacturing a color display device, comprising: bringing a semiconductor layer into direct contact with each other; and forming a source region and a drain region in the semiconductor layer by diffusing boron from the impurity diffusion source. 79. A semiconductor film forming step of forming a semiconductor film on a transparent substrate, and the semiconductor film is formed by photolithography.
A linear light-shielding body forming step of forming a plurality of linear light-shielding bodies by patterning using an etching technique; a color material fixing step of fixing a color material to an opening between the plurality of linear light-shielding bodies; A transparent protective film forming step of forming a transparent protective film covering the color material, and a first conductive film forming step of forming a first conductive film to be a source line or a drain electrode later on the transparent protective film Forming a source line or a drain electrode by patterning the first conductive film using photolithography and etching techniques; and forming a buried transparent protective film for burying the source line and the drain electrode. Forming a buried transparent protective film to form a film; forming a semiconductor film on the source line, the drain electrode and the buried transparent protective film; A semiconductor layer forming step of patterning using a lithography and etching technique to form a semiconductor layer of a predetermined shape; and a step in which the source line extends outside the pixel matrix region to cover a portion serving as a source line terminal. A blocking film forming step of forming a blocking film for preventing the formation of a gate insulating film on the substrate; a gate insulating film forming step of forming a gate insulating film covering the semiconductor layer and the linear light-shielding body; A blocking film removing step of removing a film, a second conductive film forming step of forming a second conductive film on the source line terminal and the gate insulating film, and photolithography of the second conductive film. Manufacturing a color display device, comprising a gate electrode forming step of forming a gate electrode and a pad for a source line terminal by patterning using an etching technique. Law. 80. The method for manufacturing a color display device according to claim 79, wherein the surface of the source line and the drain electrode is formed of a semiconductor film containing a donor or an acceptor to serve as an impurity diffusion source, and the source line is formed. And a source region and a drain region are formed in the semiconductor layer by diffusion of a donor or an acceptor from the impurity diffusion source. Method. 81. A semiconductor film forming step of forming a semiconductor film on a transparent substrate, the semiconductor film being formed by photolithography,
A step of forming a plurality of linear light shields, at least a part of which serves also as a source line or a drain electrode, by patterning using an etching technique; A color material fixing step of fixing a material, a transparent protective film forming step of forming a transparent protective film covering the color material, and a semiconductor forming a semiconductor film on the linear light-shielding body and the transparent protective film. A film forming step; a semiconductor layer forming step of patterning the semiconductor film by using photolithography and etching techniques to form a semiconductor layer having a predetermined shape; and A blocking film forming step of covering a portion serving as a terminal and forming a blocking film for preventing the formation of a gate insulating film in this portion in the next step; and the semiconductor layer and the linear light-shielding body A gate insulating film forming step of forming a covering gate insulating film; a blocking film removing step of removing the blocking film; and a conductive film forming a conductive film on the source line terminals and the gate insulating film. A method for manufacturing a color display device, comprising: a step of forming a gate electrode and a source line terminal pad by patterning the conductive film using photolithography and etching techniques. 82. The method for manufacturing a color display device according to claim 81, wherein the surfaces of the source line and the drain electrode are formed of a semiconductor film containing a donor or an acceptor to serve as an impurity diffusion source, and these source lines are formed. And a source region and a drain region are formed in the semiconductor layer by diffusion of a donor or an acceptor from the impurity diffusion source. Method. 83. A semiconductor film forming step of forming a semiconductor film on a transparent substrate, and the semiconductor film is formed by photolithography.
A linear light shielding body forming step of forming a plurality of linear light shielding bodies at least partly also serving as a gate electrode by patterning using an etching technique; and fixing a color material to an opening between the plurality of linear light shielding bodies. A color material fixing step to be performed, and a blocking film that covers the portion where the linear light-shielding body extends outside the pixel matrix region and becomes a gate line terminal and that prevents the formation of a transparent protective film on this portion in the next step. Forming a transparent protective film covering the linear light-shielding body and the color material; and forming a semiconductor film on the transparent protective film. A semiconductor layer forming step of patterning the semiconductor film using photolithography and etching techniques to form a semiconductor layer having a predetermined shape; a blocking film removing step of removing the blocking film; A conductive film forming step of forming a conductive film on the element and the transparent protective film; and patterning the conductive film using photolithography and etching techniques to form source and drain electrodes and gate line terminal pads. A method for manufacturing a color display device, comprising: forming a source line / drain electrode. 84. The method for manufacturing a color display device according to claim 83, wherein the source line and the drain electrode are formed of a metal containing boron to serve as an impurity diffusion source. A method for manufacturing a color display device, comprising: bringing a semiconductor layer into direct contact with each other; and forming a source region and a drain region in the semiconductor layer by diffusing boron from the impurity diffusion source. 85. A color display comprising: a counter substrate facing the color display device according to claim 1; and liquid crystal sealed between the color display device and the counter substrate. Liquid crystal devices.