JPH10147875A - Heat treatment equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To uniformly heat the material to be subjected to heat treatment loaded onto a susceptor at a high efficiency in a sheet type CVD device by composing the inside region of a susceptor of substance which lies in a liq. state at the time of heating and providing it with a stirrer stirring the liq. part thereof. SOLUTION: In a sheet type CVD device, a susceptor 12 loaded with a semiconductor wafer 10 in a chamber 50 has a double structure of an inside region 12b (such as aluminum) which lies in a liq. state at the time of heating and an envelope part 12a (such as tungsten) which lies in a solid state at the time of heating. Furthermore, the inside of the susceptor 12 is provided with a stirrer 12c rotatively driving in a non-contact system by the rotating magnetic field, and the outside is brought into contact with a planar spiral resistance heating heater 11. In this constitution, the susceptor 12 is heated at about 800 to 1000 deg.C by the heater 11 to liquefy the inside region 12b, and the stirrer 12c is rotatively driven by the rotating magnetic field as a stirrer driving source 30. In this way, the soaking properties in the plane of the wafer is improved, the electric power to be fed is reduced, and the service life of the heater 11 is prolonged.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus, and more particularly to a susceptor for mounting a material to be heated and transmitting heat to the material to be heated. While heating
This is used in a single-wafer CVD apparatus for depositing a VD film.

[0002]

2. Description of the Related Art FIG. 3 shows a conventional single-wafer CVD apparatus. In FIG. 3, reference numeral 50 denotes a chamber, in which a reaction gas introduction port 51 is provided at an upper portion thereof, and an exhaust port 52 is provided at a lower portion thereof, and a flat spiral resistance heater 61 is provided therein. The susceptor 62 has a semiconductor wafer 60 as a material to be heated, is disposed above the heater 61 inside the chamber, and is heated by heat radiation from the heater 61 to transfer heat to the wafer 60. Things. In FIG. 3, white arrows indicate the flow of heat.

However, the wafer 6 by the heater 61
At the time of the heating of 0, the susceptor 62 and the wafer 60 mounted thereon are excessively heated in a region along the spiral pattern of the heater 61, and a heat distribution is generated in the wafer surface.

As described above, since the uniformity of the surface of the wafer is deteriorated, it is impossible to dispose the heater 61 and the susceptor 62 in contact with each other. Become.

[0005]

As described above, the heat treatment apparatus used in the conventional CVD apparatus has a problem that the uniformity of the surface of the wafer is poor when the wafer is heated by the heater. The present invention has been made in order to solve the above problems, and an object of the present invention is to provide a heat treatment apparatus capable of improving the uniformity of heat in a surface of a material to be heated when the material to be heated is heated by a heating source. I do. Another object of the present invention is to provide a heat treatment apparatus that can heat a material to be heated only by heat conduction from a heating source and can improve thermal efficiency.

[0006]

According to the present invention, there is provided a heat treatment apparatus comprising: a heat source; and a susceptor which is heated by the heat source, mounts the material to be heated, and transfers heat to the material to be heated. The susceptor includes a substance that is a liquid when heated by the heating source in an internal region, and includes a stirrer for stirring the liquid portion.
Further, the heat treatment apparatus of the present invention is characterized in that the heating source is a resistance heater and is in contact with the susceptor.

[0007]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 shows a single-wafer CVD using a heat treatment apparatus according to a first embodiment of the present invention.
1 schematically shows the device.

FIG. 2 schematically shows an example of the susceptor shown in FIG. 1 and 2, reference numeral 50 denotes a chamber, in which a reaction gas inlet 51 is provided in an upper part thereof, and an exhaust port 52 is provided in a lower part thereof, and a flat spiral resistance heater as a heating source is provided therein. 11 are provided.

The susceptor 12 is disposed inside the chamber above the heater 11 (in this example, disposed in contact with the heater 11), mounts the semiconductor wafer 10 as a material to be heated, and heats the semiconductor wafer 10 with the heater 11. Then, heat is transferred to the wafer 10.

The susceptor 12 has a substance which is liquid when heated to, for example, 800 to 1000 ° C. by the heater 11 in an internal region.
1 has a double structure of an envelope portion 12a which is solid when heated by the heater 1 and an inner region 12b which is a metal having good thermal conductivity which is liquid when heated by the heater 11. in this case,
The envelope part 12a is, for example, tungsten, and the inner part 12b is, for example, aluminum.

The susceptor 12 includes a stir bar 12c for stirring the liquid portion. The stirrer 12c is desirably driven by a drive source 30 outside the susceptor, for example, in a non-contact manner. In this example, the stirrer 12c is made of a magnetic material such as ferrite and is generated by the drive source 30 outside the susceptor. It is rotationally driven by a rotating magnetic field in a non-contact manner. In this case, since the rotational position of the stirrer 12c is determined by the magnetic force of the drive source 30 outside the susceptor, it is not necessary to hold the stirrer 12c by the rotating shaft.

In the above configuration, when the susceptor 12 is heated by the heater 11, a heat distribution transmitted along the spiral pattern of the heater 11 occurs. However, the susceptor 12 may have an envelope portion (eg, tungsten) 12a that is solid when heated to, for example, 800-1000 ° C.
It has a double structure of an inner region 12b which is a metal having good thermal conductivity (for example, aluminum) which is a liquid at the time of the heating, and has a stirrer 12c for stirring the liquid portion. In this example, the stirrer 12c is made of a magnetic material, and is rotationally driven in a non-contact manner by a rotating magnetic field generated by a driving source 30 outside the susceptor.

As a result, the heat distribution in the susceptor surface is uniformed, and the uniformity in the wafer surface is improved, so that the susceptor 12 can be disposed in contact with the heater 11 as described above. In addition, the wafer 10 can be heated only by the heat conduction from the heater 11, and the thermal efficiency can be improved. In other words, the power supplied to the heater 11 can be reduced, and the life of the heater 11 can be extended.

The internal region 12b of the susceptor 12
Is set to be larger than the area of the wafer mounting portion in the envelope portion 12a, so that the central region of the heat distribution in the susceptor surface is transmitted to the wafer surface, so that the uniformity in the wafer surface is improved. Further improve.

Further, since the stirrer 12c is rotationally driven by the drive source 30 outside the susceptor, there is a problem of heat resistance when the drive source is temporarily built in the susceptor internal region 12b which is a liquid at the time of heating, and the drive source itself has a problem. It is possible to avoid the problem of heat distribution occurring in the susceptor inner region 12b due to heat generation.

It is also possible to use a heating source other than a resistance heater as the heating source 11. Alternatively, the stirrer 12b may be held by a rotating shaft (not shown), and the rotating shaft may be rotationally driven by a driving source outside the susceptor.

[0017]

As described above, according to the present invention, it is possible to provide a heat treatment apparatus capable of improving the uniformity of the surface of the material to be heated when the material to be heated is heated by the heating source.

[Brief description of the drawings]

FIG. 1 is a configuration explanatory view schematically showing a single wafer type CVD apparatus using a heat treatment apparatus according to a first embodiment of the present invention.

FIG. 2 is a top view schematically showing the inside of an example of the susceptor in FIG.

FIG. 3 shows a single wafer type CVD using a conventional heat treatment apparatus.
FIG. 1 is a configuration explanatory view schematically showing an apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Semiconductor wafer, 11 ... Resistance heater, 12 ... Susceptor, 12a ... Enclosure part, 12b ... Inner area, 12c ... Stirrer, 30 ... Drive source, 50 ... Chamber, 51 ... Reaction gas inlet, 52 …exhaust port.

Claims (9)

[Claims] 1. A heating source, heated by the heating source,
A susceptor for mounting the material to be heated and transmitting heat to the material to be heated, wherein the susceptor has a substance that is liquid when heated by the heating source in an internal region, and the liquid portion And a stirrer for stirring the mixture. 2. The heat treatment apparatus according to claim 1, wherein
The susceptor has a double structure of an envelope portion that is solid when heated by the heating source and an internal region that is a metal with good thermal conductivity that is liquid when heated by the heating source. Heat treatment equipment. 3. The heat treatment apparatus according to claim 2, wherein
The heat treatment apparatus according to claim 1, wherein the envelope portion is made of tungsten, and the inner portion is made of aluminum. 4. The heat treatment apparatus according to claim 1, wherein an upper surface of the internal region is larger than an area of a mounting portion of the envelope portion on which the material to be heated is mounted. Heat treatment equipment. 5. The heat treatment apparatus according to claim 1, wherein the stirrer is driven by a drive source external to the susceptor. 6. The heat treatment apparatus according to claim 1, wherein the stirrer is driven in a non-contact manner by a drive source external to the susceptor. 7. The heat treatment apparatus according to claim 1, wherein the stirrer is made of a magnetic material, and is rotated in a non-contact manner by a rotating magnetic field generated by a driving source external to the susceptor. A heat treatment device being driven. 8. The heat treatment apparatus according to claim 1, wherein the heating source is a resistance heater and is in contact with the susceptor. 9. The heat treatment apparatus according to claim 1, wherein the semiconductor wafer is heated in a CV mode.
A heat treatment apparatus used for a single-wafer CVD apparatus for depositing a D film.