JPH10153494A - 熱電対 - Google Patents
熱電対Info
- Publication number
- JPH10153494A JPH10153494A JP8313403A JP31340396A JPH10153494A JP H10153494 A JPH10153494 A JP H10153494A JP 8313403 A JP8313403 A JP 8313403A JP 31340396 A JP31340396 A JP 31340396A JP H10153494 A JPH10153494 A JP H10153494A
- Authority
- JP
- Japan
- Prior art keywords
- dissimilar metal
- guide member
- metal conductors
- thermocouple
- protection tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims abstract description 72
- 239000004020 conductor Substances 0.000 claims abstract description 69
- 239000010453 quartz Substances 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 239000012212 insulator Substances 0.000 abstract description 30
- 239000006185 dispersion Substances 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 238000003780 insertion Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910001006 Constantan Inorganic materials 0.000 description 2
- LIXXICXIKUPJBX-UHFFFAOYSA-N [Pt].[Rh].[Pt] Chemical compound [Pt].[Rh].[Pt] LIXXICXIKUPJBX-UHFFFAOYSA-N 0.000 description 2
- 229910001179 chromel Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/02—Means for indicating or recording specially adapted for thermometers
- G01K1/026—Means for indicating or recording specially adapted for thermometers arrangements for monitoring a plurality of temperatures, e.g. by multiplexing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/08—Protective devices, e.g. casings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
(57)【要約】
【課題】 検出温度にバラツキの少ない信頼性の高い熱
電対を提供する点にある。 【解決手段】 石英等からなる保護管２の内部に少なく
とも一対の異種金属導線３Ａ，３Ｂ、４Ａ，４Ｂ、５
Ａ，５Ｂを挿入してなる熱電対であって、前記異種金属
導線３Ａ，３Ｂ、４Ａ，４Ｂ、５Ａ，５Ｂの結合部、つ
まり温接点３Ｃ，４Ｃ，５Ｃを保護管２内部中心に位置
させるためのガイド部材７を設けて、熱電対を構成し
た。
電対を提供する点にある。 【解決手段】 石英等からなる保護管２の内部に少なく
とも一対の異種金属導線３Ａ，３Ｂ、４Ａ，４Ｂ、５
Ａ，５Ｂを挿入してなる熱電対であって、前記異種金属
導線３Ａ，３Ｂ、４Ａ，４Ｂ、５Ａ，５Ｂの結合部、つ
まり温接点３Ｃ，４Ｃ，５Ｃを保護管２内部中心に位置
させるためのガイド部材７を設けて、熱電対を構成し
た。
Description
【０００１】
【発明の属する技術分野】本発明は、例えば炉内の温度
を図る目的で使用される熱電対に関し、具体的には、石
英等からなる保護管の内部に少なくとも一対の異種金属
導線を結合してなる熱電対に関する。
を図る目的で使用される熱電対に関し、具体的には、石
英等からなる保護管の内部に少なくとも一対の異種金属
導線を結合してなる熱電対に関する。
【０００２】
【従来の技術】上記熱電対は、例えば一端部が封止され
た保護管内に他端部の開口から一対又は複数対の異種金
属導線を挿入して、製造することが行われている。
た保護管内に他端部の開口から一対又は複数対の異種金
属導線を挿入して、製造することが行われている。
【０００３】上記のような対になる異種金属導線は、白
金−白金ロジウム、クロメル（ニッケル・クロム）−ア
ルメル（ニッケル・アルミ）、鉄−コンスタンタン（ニ
ッケル・銅）等からなり、例えばクロメル−アルメルの
場合では、温度１度当たり４０μＶの電圧が発生するも
のであり、異種金属導線としては非常に細いものが使用
されるものである。
金−白金ロジウム、クロメル（ニッケル・クロム）−ア
ルメル（ニッケル・アルミ）、鉄−コンスタンタン（ニ
ッケル・銅）等からなり、例えばクロメル−アルメルの
場合では、温度１度当たり４０μＶの電圧が発生するも
のであり、異種金属導線としては非常に細いものが使用
されるものである。
【０００４】従って、保護管内に一対の異種金属導線を
挿入する前に、異種金属導線の結合部、つまり温接点を
保護管の径方向中心部に位置させた状態で、保護管内に
挿入したとしても、異種金属導線が細いものであるた
め、挿入中に異種金属導線が折れ曲がり、前記状態が崩
れやすい。このため、保護管内に挿入された後の温接点
が保護管の径方向中心部に位置していることが少ない。
挿入する前に、異種金属導線の結合部、つまり温接点を
保護管の径方向中心部に位置させた状態で、保護管内に
挿入したとしても、異種金属導線が細いものであるた
め、挿入中に異種金属導線が折れ曲がり、前記状態が崩
れやすい。このため、保護管内に挿入された後の温接点
が保護管の径方向中心部に位置していることが少ない。
【０００５】そして、上記のように製造された熱電対を
見てみると、保護管内に対する温接点の位置が径方向で
一定でないことが多く、このように、保護管内に対する
温接点の位置が径方向で一定でないとすれば、特に高温
の炉内の温度を測定する場合に、保護管の表面温度の影
響を大きく受けてしまう熱電対が発生し、検出温度にバ
ラツキのある熱電対が多数発生していた。因みに、この
ような熱電対では、異種金属導線を定期的に又はバラツ
キの程度によって交換する必要性があり、その交換の度
に検出温度にバラツキが発生することもある。又、保護
管内に複数対の異種金属導線を挿入する場合には、保護
管の長手方向に配置される複数の温接点での検出精度が
異なる場合があり、改善の余地があった。
見てみると、保護管内に対する温接点の位置が径方向で
一定でないことが多く、このように、保護管内に対する
温接点の位置が径方向で一定でないとすれば、特に高温
の炉内の温度を測定する場合に、保護管の表面温度の影
響を大きく受けてしまう熱電対が発生し、検出温度にバ
ラツキのある熱電対が多数発生していた。因みに、この
ような熱電対では、異種金属導線を定期的に又はバラツ
キの程度によって交換する必要性があり、その交換の度
に検出温度にバラツキが発生することもある。又、保護
管内に複数対の異種金属導線を挿入する場合には、保護
管の長手方向に配置される複数の温接点での検出精度が
異なる場合があり、改善の余地があった。
【０００６】
【発明が解決しようとする課題】本発明が前述の状況に
鑑み、解決しようとするところは、検出温度にバラツキ
の少ない信頼性の高い熱電対を提供する点にある。
鑑み、解決しようとするところは、検出温度にバラツキ
の少ない信頼性の高い熱電対を提供する点にある。
【０００７】
【課題を解決するための手段】本発明は、前述の課題解
決のために、石英等からなる保護管の内部に少なくとも
一対の異種金属導線を挿入してなる熱電対であって、前
記異種金属導線の結合部、つまり温接点を保護管内部中
心に位置させるためのガイド部材を設けて、熱電対を構
成した。従って、異種金属導線を保護管の内部に挿入す
ると、ガイド部材の案内作用により、挿入後の異種金属
導線の結合部である温接点を保護管内部中心に位置させ
ることができる。又、異種金属導線の交換時において
も、同様に交換用の新たな異種金属導線の結合部である
温接点を保護管内部中心に位置させることができる。こ
のように、温接点を保護管内部中心に位置させることに
よって、保護管の表面温度の影響を少なく抑えることが
できる。
決のために、石英等からなる保護管の内部に少なくとも
一対の異種金属導線を挿入してなる熱電対であって、前
記異種金属導線の結合部、つまり温接点を保護管内部中
心に位置させるためのガイド部材を設けて、熱電対を構
成した。従って、異種金属導線を保護管の内部に挿入す
ると、ガイド部材の案内作用により、挿入後の異種金属
導線の結合部である温接点を保護管内部中心に位置させ
ることができる。又、異種金属導線の交換時において
も、同様に交換用の新たな異種金属導線の結合部である
温接点を保護管内部中心に位置させることができる。こ
のように、温接点を保護管内部中心に位置させることに
よって、保護管の表面温度の影響を少なく抑えることが
できる。
【０００８】前記異種金属導線を複数対設け、それら異
種金属導線の温接点を前記保護管の長手方向に沿って配
置するように構成し、前記ガイド部材の外周形状を保護
管の内面形状に略等しい形状にし、このガイド部材の中
心部に前記温接点となる一対の異種金属導線を貫通させ
る一対の孔を形成し、且つ、該ガイド部材の外周縁に他
の異種金属導線を被覆した被覆部材を係止保持する切欠
きを形成するとともに、前記被覆部材をガイド部材にて
係止保持した状態において該被覆部材の一部が前記保護
管の内面に接触するように構成することによって、複数
対の異種金属導線を束ねた状態で保護管の内部に挿入す
る際に、散らばることがなく、ガイド部材により確実に
係止保持した状態で挿入することができる。しかも、複
数対の異種金属導線を保護管の内部に挿入すると、温接
点以外の他の異種金属導線を被覆した被覆部材の一部が
保護管の内面に接触することから、他の異種金属導線が
保護管の長手方向に移動することを阻止することがで
き、被覆部材の一部が保護管の内面に接触状態の他の異
種金属導線の先端の温接点の位置が移動する、あるいは
変化することが少ない。
種金属導線の温接点を前記保護管の長手方向に沿って配
置するように構成し、前記ガイド部材の外周形状を保護
管の内面形状に略等しい形状にし、このガイド部材の中
心部に前記温接点となる一対の異種金属導線を貫通させ
る一対の孔を形成し、且つ、該ガイド部材の外周縁に他
の異種金属導線を被覆した被覆部材を係止保持する切欠
きを形成するとともに、前記被覆部材をガイド部材にて
係止保持した状態において該被覆部材の一部が前記保護
管の内面に接触するように構成することによって、複数
対の異種金属導線を束ねた状態で保護管の内部に挿入す
る際に、散らばることがなく、ガイド部材により確実に
係止保持した状態で挿入することができる。しかも、複
数対の異種金属導線を保護管の内部に挿入すると、温接
点以外の他の異種金属導線を被覆した被覆部材の一部が
保護管の内面に接触することから、他の異種金属導線が
保護管の長手方向に移動することを阻止することがで
き、被覆部材の一部が保護管の内面に接触状態の他の異
種金属導線の先端の温接点の位置が移動する、あるいは
変化することが少ない。
【０００９】前記ガイド部材を石英で形成し、前記異種
金属導線を被覆する被覆部材を石英で形成するととも
に、これらガイド部材と被覆部材とを融着することによ
って、ガイド部材と被覆部材との間に隙間が発生するこ
とを阻止することができるとともに、同一材質であるか
ら、熱膨張率も同一であり、ガイド部材及び被覆部材の
伸縮に伴ってそれらの内部に挿入されている異種金属導
線に対して作用する伸縮力を異種金属導線のどの部位に
対しても均等にすることができる。
金属導線を被覆する被覆部材を石英で形成するととも
に、これらガイド部材と被覆部材とを融着することによ
って、ガイド部材と被覆部材との間に隙間が発生するこ
とを阻止することができるとともに、同一材質であるか
ら、熱膨張率も同一であり、ガイド部材及び被覆部材の
伸縮に伴ってそれらの内部に挿入されている異種金属導
線に対して作用する伸縮力を異種金属導線のどの部位に
対しても均等にすることができる。
【００１０】
【発明の実施の形態】本発明の詳細を、図示した実施例
に基づいて説明する。図１は本発明の熱電対１を示した
ものである。この熱電対１は、透明な石英等からなる保
護管２と、この保護管２の内部に設けられた３対の異種
金属導線３Ａ，３Ｂ、４Ａ，４Ｂ、５Ａ，５Ｂとを主要
構成部材として構成されている。図では、３対の異種金
属導線３Ａ，３Ｂ、４Ａ，４Ｂ、５Ａ，５Ｂを示してい
るが、１対の異種金属導線、２対の異種金属導線、ある
いは４対以上の異種金属導線にも本発明は適応すること
ができる。
に基づいて説明する。図１は本発明の熱電対１を示した
ものである。この熱電対１は、透明な石英等からなる保
護管２と、この保護管２の内部に設けられた３対の異種
金属導線３Ａ，３Ｂ、４Ａ，４Ｂ、５Ａ，５Ｂとを主要
構成部材として構成されている。図では、３対の異種金
属導線３Ａ，３Ｂ、４Ａ，４Ｂ、５Ａ，５Ｂを示してい
るが、１対の異種金属導線、２対の異種金属導線、ある
いは４対以上の異種金属導線にも本発明は適応すること
ができる。
【００１１】前記異種金属導線３Ａ，３Ｂ、４Ａ，４
Ｂ、５Ａ，５Ｂそれぞれは、前述のように白金−白金ロ
ジウム、クロメル（ニッケル・クロム）−アルメル（ニ
ッケル・アルミ）、鉄−コンスタンタン（ニッケル・
銅）等から構成されているが、これらのものに限定され
るものではない。
Ｂ、５Ａ，５Ｂそれぞれは、前述のように白金−白金ロ
ジウム、クロメル（ニッケル・クロム）−アルメル（ニ
ッケル・アルミ）、鉄−コンスタンタン（ニッケル・
銅）等から構成されているが、これらのものに限定され
るものではない。
【００１２】前記異種金属導線３Ａ，３Ｂ、４Ａ，４
Ｂ、５Ａ，５Ｂには、図１、図２及び図４に示すよう
に、一対の異種金属導線３Ａ，３Ｂ又は４Ａ，４Ｂ又は
５Ａ，５Ｂをそれぞれ挿入して絶縁するための被覆部材
として、絶縁碍子６が設けられている。この絶縁碍子６
には、異種金属導線３Ａ，３Ｂ又は４Ａ，４Ｂ又は５
Ａ，５Ｂを挿入することができる２つの孔が形成されて
いるが、例えば異種金属導線３Ａ，３Ｂのうちの一方の
異種金属導線３Ａのみを挿入する１つの孔のみを絶縁碍
子６に形成して実施してもよい。この場合、一対の異種
金属導線に対して２個の絶縁碍子６，６が必要になる。
そして、前記異種金属導線３Ａ，３Ｂ、４Ａ，４Ｂ、５
Ａ，５Ｂの各先端の結合部、つまり温接点３Ｃ、４Ｃ、
５Ｃが保護管２の長手方向に沿って配置され、且つ、保
護管２の内部中心に位置するように、異種金属導線３
Ａ，３Ｂ、４Ａ，４Ｂ、５Ａ，５Ｂを保護管２内部中心
に位置させるためのガイド部材７を設けている。前記絶
縁碍子６は、セラミックあるいは石英等の絶縁性を有す
るものであればどのようなもので製造してもよい。
Ｂ、５Ａ，５Ｂには、図１、図２及び図４に示すよう
に、一対の異種金属導線３Ａ，３Ｂ又は４Ａ，４Ｂ又は
５Ａ，５Ｂをそれぞれ挿入して絶縁するための被覆部材
として、絶縁碍子６が設けられている。この絶縁碍子６
には、異種金属導線３Ａ，３Ｂ又は４Ａ，４Ｂ又は５
Ａ，５Ｂを挿入することができる２つの孔が形成されて
いるが、例えば異種金属導線３Ａ，３Ｂのうちの一方の
異種金属導線３Ａのみを挿入する１つの孔のみを絶縁碍
子６に形成して実施してもよい。この場合、一対の異種
金属導線に対して２個の絶縁碍子６，６が必要になる。
そして、前記異種金属導線３Ａ，３Ｂ、４Ａ，４Ｂ、５
Ａ，５Ｂの各先端の結合部、つまり温接点３Ｃ、４Ｃ、
５Ｃが保護管２の長手方向に沿って配置され、且つ、保
護管２の内部中心に位置するように、異種金属導線３
Ａ，３Ｂ、４Ａ，４Ｂ、５Ａ，５Ｂを保護管２内部中心
に位置させるためのガイド部材７を設けている。前記絶
縁碍子６は、セラミックあるいは石英等の絶縁性を有す
るものであればどのようなもので製造してもよい。
【００１３】前記ガイド部材７は、図２（ａ）〜（ｃ）
及び図３（ａ）〜（ｃ）に示すように、それの外周形状
が保護管２の内面形状に等しい円形に形成し、これらガ
イド部材７のうちの保護管２先端側に位置するガイド部
材７は、図２（ａ）及び図３（ａ）に示すように、中心
部に前記温接点３Ｃに対する異種金属導線３Ａ，３Ｂを
貫通させる一対の孔７Ａ，７Ａを形成して構成され、前
記保護管２先端側に位置するガイド部材７よりも基端側
（温度測定装置等が接続される側）に位置するガイド部
材７は、図２（ｂ）及び図３（ｂ）に示すように、中心
部に前記温接点４Ｃに対する異種金属導線４Ａ，４Ｂを
貫通させる一対の孔７Ａ，７Ａを形成するとともに、こ
の一対の孔７Ａ，７Ａから直径方向に設定距離外周縁側
に位置する箇所に他の異種金属導線３Ａ，３Ｂを貫通さ
せる一対の孔７Ｂ，７Ｂを形成して構成されている。
又、最も基端側（温度測定装置等が接続される側）に位
置するガイド部材７は、図２（ｃ）及び図３（ｃ）に示
すように、中心部に前記温接点５Ｃに対する異種金属導
線４Ａ，４Ｂを貫通させる一対の孔７Ａ，７Ａを形成す
るとともに、この一対の孔７Ａ，７Ａから直径方向に沿
って設定距離外周縁側に位置する２箇所にそれぞれ他の
異種金属導線３Ａ，３Ｂ、４Ａ，４Ｂを貫通させる２対
の孔７Ｂ，７Ｂ、７Ｃ，７Ｃを形成して構成されてい
る。このように構成することによって、全ての温接点３
Ｃ，４Ｃ，５Ｃを保護管内部中心に位置させることがで
きるようにしている。図２では、ガイド部材７を３種類
のもので構成したが、図３（ｃ）で示したガイド部材７
のみの１種類を製造し、これを共通に使用すれば、製造
コスト及び在庫管理コストの低減化を図ることができる
利点がある。
及び図３（ａ）〜（ｃ）に示すように、それの外周形状
が保護管２の内面形状に等しい円形に形成し、これらガ
イド部材７のうちの保護管２先端側に位置するガイド部
材７は、図２（ａ）及び図３（ａ）に示すように、中心
部に前記温接点３Ｃに対する異種金属導線３Ａ，３Ｂを
貫通させる一対の孔７Ａ，７Ａを形成して構成され、前
記保護管２先端側に位置するガイド部材７よりも基端側
（温度測定装置等が接続される側）に位置するガイド部
材７は、図２（ｂ）及び図３（ｂ）に示すように、中心
部に前記温接点４Ｃに対する異種金属導線４Ａ，４Ｂを
貫通させる一対の孔７Ａ，７Ａを形成するとともに、こ
の一対の孔７Ａ，７Ａから直径方向に設定距離外周縁側
に位置する箇所に他の異種金属導線３Ａ，３Ｂを貫通さ
せる一対の孔７Ｂ，７Ｂを形成して構成されている。
又、最も基端側（温度測定装置等が接続される側）に位
置するガイド部材７は、図２（ｃ）及び図３（ｃ）に示
すように、中心部に前記温接点５Ｃに対する異種金属導
線４Ａ，４Ｂを貫通させる一対の孔７Ａ，７Ａを形成す
るとともに、この一対の孔７Ａ，７Ａから直径方向に沿
って設定距離外周縁側に位置する２箇所にそれぞれ他の
異種金属導線３Ａ，３Ｂ、４Ａ，４Ｂを貫通させる２対
の孔７Ｂ，７Ｂ、７Ｃ，７Ｃを形成して構成されてい
る。このように構成することによって、全ての温接点３
Ｃ，４Ｃ，５Ｃを保護管内部中心に位置させることがで
きるようにしている。図２では、ガイド部材７を３種類
のもので構成したが、図３（ｃ）で示したガイド部材７
のみの１種類を製造し、これを共通に使用すれば、製造
コスト及び在庫管理コストの低減化を図ることができる
利点がある。
【００１４】前記ガイド部材７の別の形状のものを、図
５及び図６に示している。図５では、ガイド部材７の外
周縁に他の異種金属導線３Ａ，３Ｂ、４Ａ，４Ｂを係止
保持する切欠き７Ｋ，７Ｋを形成している。従って、ガ
イド部材７に異種金属導線３Ａ，３Ｂ、４Ａ，４Ｂの絶
縁碍子６，６を係止保持した状態で保護管２内部に挿入
することによって、異種金属導線３Ａ，３Ｂ、４Ａ，４
Ｂが散らばることがなく、熱電対１の組立て作業を容易
迅速に行うことができる。しかも、熱電対１の組立て作
業終了後は、係止保持した絶縁碍子６，６の一部が保護
管２の内面７Ｘに接触しているから、絶縁碍子６，６が
保護管２の長手方向に不測に移動することがなく、温接
点３Ｃ，４Ｃの位置が不必要に移動されることがない。
又、切欠き７Ｋ，７Ｋを形成することによって、ガイド
部材７を挟んで絶縁碍子６，６を分割する必要がなく、
長さの長い単一の絶縁碍子６を使用することができ、組
立て作業の容易迅速化を図ることができるだけでなく、
図１に示すような保護管２の先端部から１番目に位置す
る碍子６がその２つの切欠き７Ｋ，７Ｋ分の重量が軽く
なるとともに、保護管２の先端部から２番目に位置する
碍子６がその１つの切欠き７Ｋ分の重量が軽くなり、熱
電対１の軽量化をも図ることができる。又、図６では、
更に碍子６の軽量化を図るために大きな４つの切欠き７
Ｋを形成したものを示している。前記係止保持した絶縁
碍子６，６の一部が保護管２の内面７Ｘに線接触する、
あるいは点接触する、更には面接触する等、絶縁碍子
６，６の一部が保護管２の内面７Ｘに接触する範囲は、
限定されるものではない。そして、ガイド部材７に異種
金属導線３Ａ，３Ｂ、４Ａ，４Ｂの絶縁碍子６，６を係
止保持した状態で保護管２内部に挿入する際に、絶縁碍
子６，６の一部が保護管２の内面７Ｘに接触しないよう
に構成しておけば、挿入時の接触抵抗を無くしてスムー
ズな挿入が行えるのである。又、前記保護管２内面を研
磨して平滑面にしておけば、絶縁碍子６，６の一部が保
護管２の内面７Ｘに多少接触しても挿入に支障が出るこ
とを回避することができる。
５及び図６に示している。図５では、ガイド部材７の外
周縁に他の異種金属導線３Ａ，３Ｂ、４Ａ，４Ｂを係止
保持する切欠き７Ｋ，７Ｋを形成している。従って、ガ
イド部材７に異種金属導線３Ａ，３Ｂ、４Ａ，４Ｂの絶
縁碍子６，６を係止保持した状態で保護管２内部に挿入
することによって、異種金属導線３Ａ，３Ｂ、４Ａ，４
Ｂが散らばることがなく、熱電対１の組立て作業を容易
迅速に行うことができる。しかも、熱電対１の組立て作
業終了後は、係止保持した絶縁碍子６，６の一部が保護
管２の内面７Ｘに接触しているから、絶縁碍子６，６が
保護管２の長手方向に不測に移動することがなく、温接
点３Ｃ，４Ｃの位置が不必要に移動されることがない。
又、切欠き７Ｋ，７Ｋを形成することによって、ガイド
部材７を挟んで絶縁碍子６，６を分割する必要がなく、
長さの長い単一の絶縁碍子６を使用することができ、組
立て作業の容易迅速化を図ることができるだけでなく、
図１に示すような保護管２の先端部から１番目に位置す
る碍子６がその２つの切欠き７Ｋ，７Ｋ分の重量が軽く
なるとともに、保護管２の先端部から２番目に位置する
碍子６がその１つの切欠き７Ｋ分の重量が軽くなり、熱
電対１の軽量化をも図ることができる。又、図６では、
更に碍子６の軽量化を図るために大きな４つの切欠き７
Ｋを形成したものを示している。前記係止保持した絶縁
碍子６，６の一部が保護管２の内面７Ｘに線接触する、
あるいは点接触する、更には面接触する等、絶縁碍子
６，６の一部が保護管２の内面７Ｘに接触する範囲は、
限定されるものではない。そして、ガイド部材７に異種
金属導線３Ａ，３Ｂ、４Ａ，４Ｂの絶縁碍子６，６を係
止保持した状態で保護管２内部に挿入する際に、絶縁碍
子６，６の一部が保護管２の内面７Ｘに接触しないよう
に構成しておけば、挿入時の接触抵抗を無くしてスムー
ズな挿入が行えるのである。又、前記保護管２内面を研
磨して平滑面にしておけば、絶縁碍子６，６の一部が保
護管２の内面７Ｘに多少接触しても挿入に支障が出るこ
とを回避することができる。
【００１５】前記ガイド部材７及び絶縁碍子６・・のい
ずれも石英で形成しておけば、ガイド部材７と絶縁碍子
６・・との接触部分を融着することができ、例えば図４
において右側に位置する３本の絶縁碍子６・・の左端部
それぞれと、これと接触するガイド部材７の右端部とを
融着して、ガイド部材７と３本の絶縁碍子６・・とを一
体化しておけば、ガイド部材７と絶縁碍子６・・との接
触部分に隙間が発生することを抑えることができるとと
もに、熱電対１の組立て作業を容易迅速に行うことがで
きる。尚、図４において左側に位置する２本の絶縁碍子
６・・の右端部それぞれと、ガイド部材７の左端部とを
前記同様に融着してもよいし、融着しなくてもよい。融
着していない場合の方が接点５Ｃを作る場合にやり易い
ためであり、ガイド部材７と絶縁碍子６・・との接触部
分の融着は、全箇所で行ってもよいし、一部の箇所での
み行ってもよい。しかも、同一材料でガイド部材７及び
絶縁碍子６・・を構成することによって、熱に対する膨
張率も同一であることから、ガイド部材７及び絶縁碍子
６・・の伸縮に伴ってそれらの内部に挿入されている異
種金属導線に対して作用する伸縮力を異種金属導線のど
の部位に対しても均等にすることができる。
ずれも石英で形成しておけば、ガイド部材７と絶縁碍子
６・・との接触部分を融着することができ、例えば図４
において右側に位置する３本の絶縁碍子６・・の左端部
それぞれと、これと接触するガイド部材７の右端部とを
融着して、ガイド部材７と３本の絶縁碍子６・・とを一
体化しておけば、ガイド部材７と絶縁碍子６・・との接
触部分に隙間が発生することを抑えることができるとと
もに、熱電対１の組立て作業を容易迅速に行うことがで
きる。尚、図４において左側に位置する２本の絶縁碍子
６・・の右端部それぞれと、ガイド部材７の左端部とを
前記同様に融着してもよいし、融着しなくてもよい。融
着していない場合の方が接点５Ｃを作る場合にやり易い
ためであり、ガイド部材７と絶縁碍子６・・との接触部
分の融着は、全箇所で行ってもよいし、一部の箇所での
み行ってもよい。しかも、同一材料でガイド部材７及び
絶縁碍子６・・を構成することによって、熱に対する膨
張率も同一であることから、ガイド部材７及び絶縁碍子
６・・の伸縮に伴ってそれらの内部に挿入されている異
種金属導線に対して作用する伸縮力を異種金属導線のど
の部位に対しても均等にすることができる。
【００１６】
【発明の効果】請求項１によれば、ガイド部材を設ける
ことによって、異種金属導線の温接点を保護管内部中心
に常に位置させることができるから、組み立てられたど
の熱電対を取っても検出温度にバラツキが少なく、又、
異種金属導線を交換した後の検出温度と交換前の検出温
度との間に大きな検出誤差が発生することがない。従っ
て、検出温度にバラツキが非常に少ない信頼性の高い熱
電対を提供することができる。
ことによって、異種金属導線の温接点を保護管内部中心
に常に位置させることができるから、組み立てられたど
の熱電対を取っても検出温度にバラツキが少なく、又、
異種金属導線を交換した後の検出温度と交換前の検出温
度との間に大きな検出誤差が発生することがない。従っ
て、検出温度にバラツキが非常に少ない信頼性の高い熱
電対を提供することができる。
【００１７】請求項２によれば、ガイド部材の切欠きに
異種金属導線の被覆部材を係止保持させることによっ
て、異種金属導線が散らばることなく保護管内部に挿入
することができるから、熱電対の組立て作業を容易迅速
に行うことができる。しかも、熱電対の組立て作業終了
後は、係止保持した被覆部材の一部が保護管の内面に接
触しているから、被覆部材が保護管の長手方向に不測に
移動することがなく、温接点の位置が不必要に移動され
て、温度検出にバラツキが出ることを回避することがで
きる。更に、複数対の異種金属導線を配設するものにお
いては、ガイド部材に切欠きを設けることによって、熱
電対が重量増となることを抑制することができ、ガイド
部材を設ける上において熱電対の取り扱いが悪化するこ
とを回避することができる。
異種金属導線の被覆部材を係止保持させることによっ
て、異種金属導線が散らばることなく保護管内部に挿入
することができるから、熱電対の組立て作業を容易迅速
に行うことができる。しかも、熱電対の組立て作業終了
後は、係止保持した被覆部材の一部が保護管の内面に接
触しているから、被覆部材が保護管の長手方向に不測に
移動することがなく、温接点の位置が不必要に移動され
て、温度検出にバラツキが出ることを回避することがで
きる。更に、複数対の異種金属導線を配設するものにお
いては、ガイド部材に切欠きを設けることによって、熱
電対が重量増となることを抑制することができ、ガイド
部材を設ける上において熱電対の取り扱いが悪化するこ
とを回避することができる。
【００１８】請求項３によれば、ガイド部材及び被覆部
材を石英で形成することによって、それらを融着して一
体化することができるから、保護管内部への異種金属導
線の挿入をより一層容易に行うことができる。しかも、
同一材料でガイド部材及び被覆部材を構成することによ
って、熱に対する膨張率も同一であることから、ガイド
部材及び被覆部材の伸縮に伴ってそれらの内部に挿入さ
れている異種金属導線に対して作用する伸縮力を異種金
属導線のどの部位に対しても均等にすることができ、断
線等が少ない長寿命の異種金属導線を提供することがで
きる。
材を石英で形成することによって、それらを融着して一
体化することができるから、保護管内部への異種金属導
線の挿入をより一層容易に行うことができる。しかも、
同一材料でガイド部材及び被覆部材を構成することによ
って、熱に対する膨張率も同一であることから、ガイド
部材及び被覆部材の伸縮に伴ってそれらの内部に挿入さ
れている異種金属導線に対して作用する伸縮力を異種金
属導線のどの部位に対しても均等にすることができ、断
線等が少ない長寿命の異種金属導線を提供することがで
きる。
【図１】熱電対の縦断側面図
【図２】（ａ）は図１におけるＩ−Ｉ線断面図、（ｂ）
は図１におけるII−II線断面図、（ｃ）は図１における
III −III 線断面図
は図１におけるII−II線断面図、（ｃ）は図１における
III −III 線断面図
【図３】（ａ）は最先端側に位置するガイド部材を示す
斜視図、（ｂ）は先端側から２番目に位置するガイド部
材を示す斜視図、（ｃ）は先端側から３番目に位置する
ガイド部材を示す斜視図
斜視図、（ｂ）は先端側から２番目に位置するガイド部
材を示す斜視図、（ｃ）は先端側から３番目に位置する
ガイド部材を示す斜視図
【図４】熱電対の要部を示す縦断側面図
【図５】ガイド部材の別の形状を示す熱電対の要部の横
断正面図
断正面図
【図６】ガイド部材の別の形状を示す熱電対の要部の横
断正面図
断正面図
１ 熱電対 ２ 保護管 3A,3B,4A,4B,5A,5B 異種金属導線 3C,4C,5C 温接点 ６ 絶縁碍子（被覆部材） ７ ガイド部材 7A,7B,7C 孔 7K 切欠き 7X 内面
Claims (3)
- 【請求項１】石英等からなる保護管の内部に少なくとも
一対の異種金属導線を挿入してなる熱電対であって、前
記異種金属導線の結合部、つまり温接点を保護管内部中
心に位置させるためのガイド部材を設けてなる熱電対。 - 【請求項２】前記異種金属導線を複数対設け、それら異
種金属導線の温接点を前記保護管の長手方向に沿って配
置するように構成し、前記ガイド部材の外周形状を保護
管の内面形状に略等しい形状にし、このガイド部材の中
心部に前記温接点となる一対の異種金属導線を貫通させ
る一対の孔を形成し、且つ、該ガイド部材の外周縁に他
の異種金属導線を被覆した被覆部材を係止保持する切欠
きを形成するとともに、前記被覆部材をガイド部材にて
係止保持した状態において該被覆部材の一部が前記保護
管の内面に接触するように構成してなる請求項１記載の
熱電対。 - 【請求項３】前記ガイド部材を石英で形成し、前記異種
金属導線を被覆する被覆部材を石英で形成するととも
に、これらガイド部材と被覆部材とを融着してなる請求
項１又は２記載の熱電対。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31340396A JP3740587B2 (ja) | 1996-11-25 | 1996-11-25 | 熱電対 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31340396A JP3740587B2 (ja) | 1996-11-25 | 1996-11-25 | 熱電対 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10153494A true JPH10153494A (ja) | 1998-06-09 |
| JP3740587B2 JP3740587B2 (ja) | 2006-02-01 |
Family
ID=18040860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31340396A Expired - Fee Related JP3740587B2 (ja) | 1996-11-25 | 1996-11-25 | 熱電対 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3740587B2 (ja) |
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| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
| US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
| US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
| USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
| US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
| US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
| USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
| US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
| USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
| US11205585B2 (en) | 2016-07-28 | 2021-12-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
| US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11233133B2 (en) | 2015-10-21 | 2022-01-25 | Asm Ip Holding B.V. | NbMC layers |
| US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
| USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
| US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
| US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
| US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
| US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
| US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
| US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
| US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
| US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
| US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
| US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
| US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
| US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
| US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
| US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
| US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
| US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
| US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US11437241B2 (en) | 2020-04-08 | 2022-09-06 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
| US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
| US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
| US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
| US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
| US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
| US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
| US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
| US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
| US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
| US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
| US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
| US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
| US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
| US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
| US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
| USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
| US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
| US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
| US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
| USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
| US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
| US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
| US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
| US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
| US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
| US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
| US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
| US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
| US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
| US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
| US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
| US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
| US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
| USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
| US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
| US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
| US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
| US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
| US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
| US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
| US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11823866B2 (en) | 2020-04-02 | 2023-11-21 | Asm Ip Holding B.V. | Thin film forming method |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11828707B2 (en) | 2020-02-04 | 2023-11-28 | Asm Ip Holding B.V. | Method and apparatus for transmittance measurements of large articles |
| US11830738B2 (en) | 2020-04-03 | 2023-11-28 | Asm Ip Holding B.V. | Method for forming barrier layer and method for manufacturing semiconductor device |
| US11827981B2 (en) | 2020-10-14 | 2023-11-28 | Asm Ip Holding B.V. | Method of depositing material on stepped structure |
| US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11873557B2 (en) | 2020-10-22 | 2024-01-16 | Asm Ip Holding B.V. | Method of depositing vanadium metal |
| US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
| USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
| US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| US11887857B2 (en) | 2020-04-24 | 2024-01-30 | Asm Ip Holding B.V. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
| US11885020B2 (en) | 2020-12-22 | 2024-01-30 | Asm Ip Holding B.V. | Transition metal deposition method |
| US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
| US11891696B2 (en) | 2020-11-30 | 2024-02-06 | Asm Ip Holding B.V. | Injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
| US11901179B2 (en) | 2020-10-28 | 2024-02-13 | Asm Ip Holding B.V. | Method and device for depositing silicon onto substrates |
| US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
| US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
| US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
| US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
| US11961741B2 (en) | 2020-03-12 | 2024-04-16 | Asm Ip Holding B.V. | Method for fabricating layer structure having target topological profile |
| US11959168B2 (en) | 2020-04-29 | 2024-04-16 | Asm Ip Holding B.V. | Solid source precursor vessel |
| US11967488B2 (en) | 2013-02-01 | 2024-04-23 | Asm Ip Holding B.V. | Method for treatment of deposition reactor |
| US11976359B2 (en) | 2020-01-06 | 2024-05-07 | Asm Ip Holding B.V. | Gas supply assembly, components thereof, and reactor system including same |
| US11986868B2 (en) | 2020-02-28 | 2024-05-21 | Asm Ip Holding B.V. | System dedicated for parts cleaning |
| US11987881B2 (en) | 2020-05-22 | 2024-05-21 | Asm Ip Holding B.V. | Apparatus for depositing thin films using hydrogen peroxide |
| US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
| US11993843B2 (en) | 2017-08-31 | 2024-05-28 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11996309B2 (en) | 2019-05-16 | 2024-05-28 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
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-
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- 1996-11-25 JP JP31340396A patent/JP3740587B2/ja not_active Expired - Fee Related
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| US11251035B2 (en) | 2016-12-22 | 2022-02-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US12043899B2 (en) | 2017-01-10 | 2024-07-23 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
| US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| US11410851B2 (en) | 2017-02-15 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| US10468262B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by a cyclical deposition and related semiconductor device structures |
| US12106965B2 (en) | 2017-02-15 | 2024-10-01 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| JP2018146472A (ja) * | 2017-03-08 | 2018-09-20 | 株式会社神戸製鋼所 | 高温高圧炉用の温度計測器 |
| KR20190115048A (ko) * | 2017-03-08 | 2019-10-10 | 가부시키가이샤 고베 세이코쇼 | 고온 고압로용 온도 계측기 |
| US11658030B2 (en) | 2017-03-29 | 2023-05-23 | Asm Ip Holding B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
| US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
| US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
| US10950432B2 (en) | 2017-04-25 | 2021-03-16 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
| US10714335B2 (en) | 2017-04-25 | 2020-07-14 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
| US11848200B2 (en) | 2017-05-08 | 2023-12-19 | Asm Ip Holding B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
| US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
| US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
| US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
| US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
| US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
| US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
| US11976361B2 (en) | 2017-06-28 | 2024-05-07 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
| US11164955B2 (en) | 2017-07-18 | 2021-11-02 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
| US10734497B2 (en) | 2017-07-18 | 2020-08-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
| US11695054B2 (en) | 2017-07-18 | 2023-07-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
| US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US12363960B2 (en) | 2017-07-19 | 2025-07-15 | Asm Ip Holding B.V. | Method for depositing a Group IV semiconductor and related semiconductor device structures |
| US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
| US11004977B2 (en) | 2017-07-19 | 2021-05-11 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
| US11802338B2 (en) | 2017-07-26 | 2023-10-31 | Asm Ip Holding B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
| US12276023B2 (en) | 2017-08-04 | 2025-04-15 | Asm Ip Holding B.V. | Showerhead assembly for distributing a gas within a reaction chamber |
| US11587821B2 (en) | 2017-08-08 | 2023-02-21 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
| US11417545B2 (en) | 2017-08-08 | 2022-08-16 | Asm Ip Holding B.V. | Radiation shield |
| US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
| US10672636B2 (en) | 2017-08-09 | 2020-06-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
| USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| US11069510B2 (en) | 2017-08-30 | 2021-07-20 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
| US11581220B2 (en) | 2017-08-30 | 2023-02-14 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| US11993843B2 (en) | 2017-08-31 | 2024-05-28 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
| US10928731B2 (en) | 2017-09-21 | 2021-02-23 | Asm Ip Holding B.V. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
| US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
| US11387120B2 (en) | 2017-09-28 | 2022-07-12 | Asm Ip Holding B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
| US12033861B2 (en) | 2017-10-05 | 2024-07-09 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US11094546B2 (en) | 2017-10-05 | 2021-08-17 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US10734223B2 (en) | 2017-10-10 | 2020-08-04 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
| US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
| US12040184B2 (en) | 2017-10-30 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
| US10734244B2 (en) | 2017-11-16 | 2020-08-04 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by the same |
| US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
| US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
| US11682572B2 (en) | 2017-11-27 | 2023-06-20 | Asm Ip Holdings B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
| US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
| US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
| US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| US11501973B2 (en) | 2018-01-16 | 2022-11-15 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| US12119228B2 (en) | 2018-01-19 | 2024-10-15 | Asm Ip Holding B.V. | Deposition method |
| US11972944B2 (en) | 2018-01-19 | 2024-04-30 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
| US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
| US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
| USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
| US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
| US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
| USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
| USD913980S1 (en) | 2018-02-01 | 2021-03-23 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
| US11735414B2 (en) | 2018-02-06 | 2023-08-22 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US11387106B2 (en) | 2018-02-14 | 2022-07-12 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| US12173402B2 (en) | 2018-02-15 | 2024-12-24 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
| US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
| US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11939673B2 (en) | 2018-02-23 | 2024-03-26 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
| US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
| US12020938B2 (en) | 2018-03-27 | 2024-06-25 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
| US11398382B2 (en) | 2018-03-27 | 2022-07-26 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
| US10847371B2 (en) | 2018-03-27 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
| US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
| US10867786B2 (en) | 2018-03-30 | 2020-12-15 | Asm Ip Holding B.V. | Substrate processing method |
| US12230531B2 (en) | 2018-04-09 | 2025-02-18 | Asm Ip Holding B.V. | Substrate supporting apparatus, substrate processing apparatus including the same, and substrate processing method |
| US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
| US11056567B2 (en) | 2018-05-11 | 2021-07-06 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
| US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
| US11908733B2 (en) | 2018-05-28 | 2024-02-20 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
| US11837483B2 (en) | 2018-06-04 | 2023-12-05 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
| US12516413B2 (en) | 2018-06-08 | 2026-01-06 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| US11296189B2 (en) | 2018-06-21 | 2022-04-05 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
| US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11952658B2 (en) | 2018-06-27 | 2024-04-09 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11814715B2 (en) | 2018-06-27 | 2023-11-14 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US10914004B2 (en) | 2018-06-29 | 2021-02-09 | Asm Ip Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
| US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
| US11168395B2 (en) | 2018-06-29 | 2021-11-09 | Asm Ip Holding B.V. | Temperature-controlled flange and reactor system including same |
| US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10755923B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
| US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
| US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
| US12601062B2 (en) | 2018-08-06 | 2026-04-14 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
| US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
| US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
| US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
| US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
| US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
| US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
| US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
| US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
| US12378665B2 (en) | 2018-10-26 | 2025-08-05 | Asm Ip Holding B.V. | High temperature coatings for a preclean and etch apparatus and related methods |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
| US11866823B2 (en) | 2018-11-02 | 2024-01-09 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US12448682B2 (en) | 2018-11-06 | 2025-10-21 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
| US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
| US11244825B2 (en) | 2018-11-16 | 2022-02-08 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
| US11798999B2 (en) | 2018-11-16 | 2023-10-24 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
| US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| US12444599B2 (en) | 2018-11-30 | 2025-10-14 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
| US11959171B2 (en) | 2019-01-17 | 2024-04-16 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
| US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
| US11798834B2 (en) | 2019-02-20 | 2023-10-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
| US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
| US12176243B2 (en) | 2019-02-20 | 2024-12-24 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
| US11615980B2 (en) | 2019-02-20 | 2023-03-28 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
| US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
| US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
| US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
| US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
| US12410522B2 (en) | 2019-02-22 | 2025-09-09 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
| US11901175B2 (en) | 2019-03-08 | 2024-02-13 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
| US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
| US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
| US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
| US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
| US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
| US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
| US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
| US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
| US11996309B2 (en) | 2019-05-16 | 2024-05-28 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
| USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
| US12195855B2 (en) | 2019-06-06 | 2025-01-14 | Asm Ip Holding B.V. | Gas-phase reactor system including a gas detector |
| US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
| US12252785B2 (en) | 2019-06-10 | 2025-03-18 | Asm Ip Holding B.V. | Method for cleaning quartz epitaxial chambers |
| US11908684B2 (en) | 2019-06-11 | 2024-02-20 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
| US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
| USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
| USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
| US11746414B2 (en) | 2019-07-03 | 2023-09-05 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
| US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
| US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
| US12107000B2 (en) | 2019-07-10 | 2024-10-01 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
| US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
| US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
| US11996304B2 (en) | 2019-07-16 | 2024-05-28 | Asm Ip Holding B.V. | Substrate processing device |
| US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
| US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| US12129548B2 (en) | 2019-07-18 | 2024-10-29 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| US12112940B2 (en) | 2019-07-19 | 2024-10-08 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
| US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
| US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
| US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US12169361B2 (en) | 2019-07-30 | 2024-12-17 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11876008B2 (en) | 2019-07-31 | 2024-01-16 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
| US12247286B2 (en) | 2019-08-09 | 2025-03-11 | Asm Ip Holding B.V. | Heater assembly including cooling apparatus and method of using same |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| US12040229B2 (en) | 2019-08-22 | 2024-07-16 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
| US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
| USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
| USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
| USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
| US11898242B2 (en) | 2019-08-23 | 2024-02-13 | Asm Ip Holding B.V. | Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film |
| US11827978B2 (en) | 2019-08-23 | 2023-11-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| US12033849B2 (en) | 2019-08-23 | 2024-07-09 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane |
| US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
| US12532674B2 (en) | 2019-09-03 | 2026-01-20 | Asm Ip Holding B.V. | Methods and apparatus for depositing a chalcogenide film and structures including the film |
| US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
| US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US12469693B2 (en) | 2019-09-17 | 2025-11-11 | Asm Ip Holding B.V. | Method of forming a carbon-containing layer and structure including the layer |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| US12230497B2 (en) | 2019-10-02 | 2025-02-18 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
| US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
| US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
| US12006572B2 (en) | 2019-10-08 | 2024-06-11 | Asm Ip Holding B.V. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
| US12428726B2 (en) | 2019-10-08 | 2025-09-30 | Asm Ip Holding B.V. | Gas injection system and reactor system including same |
| US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
| US11996292B2 (en) | 2019-10-25 | 2024-05-28 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
| US12266695B2 (en) | 2019-11-05 | 2025-04-01 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
| US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
| US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
| US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US12119220B2 (en) | 2019-12-19 | 2024-10-15 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11976359B2 (en) | 2020-01-06 | 2024-05-07 | Asm Ip Holding B.V. | Gas supply assembly, components thereof, and reactor system including same |
| US12033885B2 (en) | 2020-01-06 | 2024-07-09 | Asm Ip Holding B.V. | Channeled lift pin |
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| US12106944B2 (en) | 2020-06-02 | 2024-10-01 | Asm Ip Holding B.V. | Rotating substrate support |
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