JPH10163634A - Multilayer wiring board - Google Patents

Multilayer wiring board

Info

Publication number
JPH10163634A
JPH10163634A JP8316445A JP31644596A JPH10163634A JP H10163634 A JPH10163634 A JP H10163634A JP 8316445 A JP8316445 A JP 8316445A JP 31644596 A JP31644596 A JP 31644596A JP H10163634 A JPH10163634 A JP H10163634A
Authority
JP
Japan
Prior art keywords
wiring conductor
conductor layer
film wiring
thin
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8316445A
Other languages
Japanese (ja)
Inventor
Akira Wakasaki
昭 若崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP8316445A priority Critical patent/JPH10163634A/en
Publication of JPH10163634A publication Critical patent/JPH10163634A/en
Pending legal-status Critical Current

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  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

(57)【要約】 【課題】電源用薄膜配線導体層と接地用薄膜配線導体層
とが間に介在する有機樹脂絶縁層に形成されたボイドに
よって短絡してしまう。 【解決手段】基板1上に、複数の有機樹脂絶縁層3a、
3b、3c、3dを多層に被着させるとともに該有機樹
脂絶縁層3a、3b、3c、3d間に電源用薄膜配線導
体層4a、接地用薄膜配線導体層4b及び信号用薄膜配
線導体層4c、4dを配してなる多層配線基板であっ
て、前記電源用薄膜配線導体層4a及び接地用薄膜配線
導体層4bは、その各々が複数の開口Hを格子状に配し
たメッシュ状をなしており、かつ電源用薄膜配線導体層
4aの導体部が接地用薄膜配線導体層4bの開口Hに、
また接地用薄膜配線導体層4bの導体部が電源用薄膜配
線導体層4aの開口はに各々対向している。
(57) Abstract: A short circuit is caused by a void formed in an organic resin insulating layer interposed between a thin film wiring conductor layer for power supply and a thin film wiring conductor layer for grounding. A plurality of organic resin insulating layers (3a) are provided on a substrate (1).
3b, 3c, 3d are applied in multiple layers, and between the organic resin insulating layers 3a, 3b, 3c, 3d, the power supply thin film wiring conductor layer 4a, the grounding thin film wiring conductor layer 4b, and the signal thin film wiring conductor layer 4c, 4d, wherein the power supply thin-film wiring conductor layer 4a and the grounding thin-film wiring conductor layer 4b each have a mesh shape in which a plurality of openings H are arranged in a grid. And the conductor of the power supply thin-film wiring conductor layer 4a is located in the opening H of the grounding thin-film wiring conductor layer 4b.
The conductor of the grounding thin film wiring conductor layer 4b faces the opening of the power supply thin film wiring conductor layer 4a.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、多層配線基板に関
し、より詳細には混成集積回路装置や半導体素子を収容
する半導体素子収納用パッケージ等に使用される多層配
線基板に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer wiring board, and more particularly to a multilayer wiring board used for a hybrid integrated circuit device, a semiconductor element housing package for housing a semiconductor element, and the like.

【0002】[0002]

【従来の技術】従来、混成集積回路装置や半導体素子収
納用パッケージ等に使用される多層配線基板はその配線
導体がMo−Mn法等の厚膜形成技術によって形成され
ている。
2. Description of the Related Art Hitherto, a multilayer wiring board used in a hybrid integrated circuit device, a package for accommodating a semiconductor element, or the like, has its wiring conductor formed by a thick film forming technique such as the Mo-Mn method.

【0003】このMo−Mn法は通常、タングステン、
モリブデン、マンガン等の高融点金属粉末に有機溶剤、
溶媒を添加混合し、ペースト状となした金属ペーストを
生セラミック体の外表面にスクリーン印刷法により所定
パターンに印刷塗布し、次にこれを複数枚積層するとと
もに還元雰囲気中で焼成し、高融点金属粉末と生セラミ
ック体とを焼結一体化させる方法である。
[0003] This Mo-Mn method is generally used for tungsten,
Organic solvents for high melting point metal powders such as molybdenum and manganese,
A solvent is added and mixed, and a paste-like metal paste is applied by printing on the outer surface of the green ceramic body in a predetermined pattern by a screen printing method. This is a method of sintering and integrating a metal powder and a green ceramic body.

【0004】なお、前記配線導体が形成されるセラミッ
ク体としては通常、酸化アルミニウム質焼結体やムライ
ト質焼結体等の酸化物系セラミックス、或いは表面に酸
化物膜を被着させた窒化アルミニウム質焼結体や炭化珪
素質焼結体等の非酸化物系セラミックスが使用される。
The ceramic body on which the wiring conductor is formed is usually an oxide ceramic such as an aluminum oxide sintered body or a mullite sintered body, or an aluminum nitride having an oxide film deposited on the surface. Non-oxide ceramics such as a porous sintered body and a silicon carbide sintered body are used.

【0005】しかしながら、このMo−Mn法を用いて
配線導体を形成した場合、配線導体は金属ペーストをス
クリーン印刷することにより形成されることから微細化
が困難で、配線導体を高密度に形成することができない
という欠点を有していた。そこで、上記欠点を解消する
ために配線導体を従来周知の厚膜形成技術により形成す
るのに代えて微細化が可能な薄膜形成技術を用いて高密
度に形成した多層配線基板が使用されるようになってき
た。
However, when the wiring conductor is formed by using the Mo-Mn method, the wiring conductor is formed by screen-printing a metal paste, so that miniaturization is difficult, and the wiring conductor is formed at a high density. Had the disadvantage of not being able to do so. Therefore, in order to solve the above-mentioned drawbacks, instead of forming the wiring conductor by a conventionally known thick film forming technique, a multilayer wiring board formed by using a thin film forming technique capable of miniaturization is used. It has become

【0006】かかる配線導体を薄膜形成技術により形成
した多層配線基板は、酸化アルミニウム質焼結体から成
るセラミックスやガラス繊維を織り込んだガラス布にエ
ポキシ樹脂を含浸させて形成されるガラスエポキシ樹脂
等から成る基板の上面にスピンコート法及び熱硬化処理
によって形成されるエポキシ樹脂等の有機樹脂から成る
絶縁層と、銅やアルミニウム等の金属を無電解メッキ法
や蒸着法等の薄膜形成技術及びフォトリソグラフィー技
術を採用することによって形成される電源用、接地用及
び信号用の各薄膜配線導体層とを交互に積層させた構造
を有しており、最上層の有機樹脂絶縁層の上面には前記
電源用、接地用及び信号用の各薄膜配線導体層と電気的
に接続するボンディングパッドが形成されており、該ボ
ンディングパッドに半導体素子等の能動部品や容量素
子、抵抗器等の受動部品の電極が熱圧着等により接合さ
れ、これによって電源用、接地用及び信号用の各薄膜配
線導体層に半導体素子等の電源端子、接地端子及び信号
端子が電気的に接続されるようになっている。
A multilayer wiring board in which such wiring conductors are formed by a thin film forming technique is made of a glass epoxy resin formed by impregnating a ceramic cloth made of an aluminum oxide sintered body or a glass cloth woven with glass fibers with an epoxy resin. An insulating layer made of an organic resin such as an epoxy resin formed by spin coating and thermosetting on the upper surface of a substrate made of a metal, such as copper or aluminum, and a thin film forming technique such as an electroless plating method or a vapor deposition method, and photolithography. It has a structure in which thin-film wiring conductor layers for power supply, grounding and signal formed by adopting the technology are alternately laminated, and the power supply is formed on the upper surface of the uppermost organic resin insulating layer. Bonding pads electrically connected to the respective thin-film wiring conductor layers for connection, grounding, and signal. Electrodes of active components such as semiconductor devices and capacitance components, and passive components such as resistors are joined by thermocompression bonding or the like, whereby power supply terminals for semiconductor devices and the like are connected to the thin-film wiring conductor layers for power supply, grounding and signal. The ground terminal and the signal terminal are electrically connected.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、この有
機樹脂絶縁層と電源用、接地用及び信号用の各薄膜配線
導体層とを交互に積層して成る多層配線基板は、電源用
薄膜配線導体層及び接地用薄膜配線導体層を流れる電流
が大きく、その流れる電流に耐え得るようにするため
に、また信号用薄膜配線導体層の特性インピーダンスを
整合させるために有機樹脂絶縁層間のほぼ全面にわたる
広面積に形成されており、広面積の電源用薄膜配線導体
層と接地用薄膜配線導体層とを間に有機樹脂絶縁層を挟
んで形成すると有機樹脂絶縁層を熱硬化させる際に発生
するガスが前記電源用薄膜配線導体層及び接地用薄膜配
線導体層によって外部に放出されるのが阻止され、その
結果、電源用薄膜配線導体層及び接地用薄膜配線導体層
と有機樹脂絶縁層との間に不要なガスが溜まり、有機樹
脂絶縁層と電源用及び接地用薄膜配線導体層との接合強
度が大きく低下してしまうという欠点を招来した。
However, a multilayer wiring board in which the organic resin insulating layer and the thin film wiring conductor layers for power supply, grounding and signal are alternately laminated is a thin film wiring conductor layer for power supply. A large area over almost the entire surface between the organic resin insulating layers so that the current flowing through the thin-film wiring conductor layer for grounding is large and can withstand the flowing current, and to match the characteristic impedance of the thin-film wiring conductor layer for signals. When a large-area thin-film wiring conductor layer for power supply and a thin-film wiring conductor layer for grounding are formed with an organic resin insulating layer interposed therebetween, a gas generated when the organic resin insulating layer is thermally cured is formed as described above. The power supply thin-film wiring conductor layer and the grounding thin-film wiring conductor layer prevent emission to the outside. As a result, the power-supply thin-film wiring conductor layer and the grounding thin-film wiring conductor layer and the organic resin insulating layer Unnecessary gas is accumulated between, and lead to disadvantage the bonding strength between the organic resin insulating layer and the power supply and the ground thin-film wiring conductor layer greatly decreases.

【0008】そこで前記有機樹脂絶縁層を間に挟んで形
成されている電源用薄膜配線導体層と接地用薄膜配線導
体層の各々の対向領域に複数の開口を格子状に配してメ
ッシュ状となし、該開口を介して有機樹脂絶縁層が熱硬
化時に発する不要なガスを外部良好に放出させることが
考えられる。
In view of this, a plurality of openings are arranged in a grid in opposing regions of the power supply thin-film wiring conductor layer and the grounding thin-film wiring conductor layer formed with the organic resin insulating layer interposed therebetween to form a mesh. None, it is conceivable that an unnecessary gas generated when the organic resin insulating layer is thermally cured through the opening is satisfactorily released to the outside.

【0009】しかしながら、電源用薄膜配線導体層と接
地用薄膜配線導体層の各々の対向領域に開口を設けた場
合、電源用薄膜配線導体層と接地用薄膜配線導体層の各
々の導体部が間に有機樹脂絶縁層を挟んで対向すること
となり、有機樹脂絶縁層はその厚みが5μm〜30μm
程度と薄いことから上下に貫通するボイド(穴)が形成
され易く、ボイド(穴)が形成されていると、該ボイド
を介して電源用薄膜配線導体層と接地用薄膜配線導体層
とが電気的に短絡し、多層配線基板としての機能が喪失
してしまういとう欠点を誘発した。
However, when an opening is provided in each of the opposing regions of the power supply thin-film wiring conductor layer and the grounding thin-film wiring conductor layer, the conductor portions of the power supply thin-film wiring conductor layer and the grounding thin-film wiring conductor layer are separated from each other. The organic resin insulating layer has a thickness of 5 μm to 30 μm
Since it is as thin as possible, voids (holes) penetrating vertically are easily formed, and when the voids (holes) are formed, the thin-film wiring conductor layer for power supply and the thin-film wiring conductor layer for grounding are electrically connected via the voids. Short circuit was caused, resulting in the loss of the function as a multilayer wiring board.

【0010】本発明は上述の欠点に鑑み案出されたもの
で、その目的は配線導体の一部もしくは全部を薄膜形成
技術により形成し、配線導体を高密度に形成したことを
特徴とする多層配線基板を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object the purpose of forming a part or all of a wiring conductor by a thin film forming technique and forming the wiring conductor at a high density. It is to provide a wiring board.

【0011】また本発明の他の目的は有機樹脂絶縁層を
熱硬化させる際に発生する不要なガスを外部に効率良く
放出させ、有機樹脂絶縁層と各薄膜配線導体層とを強固
に接合させた多層配線基板を提供することにある。
Another object of the present invention is to efficiently discharge unnecessary gas generated when the organic resin insulating layer is thermally cured to the outside so that the organic resin insulating layer and each thin-film wiring conductor layer are firmly joined. To provide a multilayer wiring board.

【0012】更に本発明の他の目的は有機樹脂絶縁層を
間に挟んで対向配置される電源用薄膜配線導体層と接地
用薄膜配線導体層との電気的絶縁を良好として多層配線
基板としての機能を長期間にわたり発揮させることがで
きる多層配線基板を提供することにある。
Still another object of the present invention is to improve the electrical insulation between the power supply thin-film wiring conductor layer and the grounding thin-film wiring conductor layer which are disposed opposite to each other with an organic resin insulating layer interposed therebetween, thereby improving the electrical insulation of the multilayer wiring board. An object of the present invention is to provide a multilayer wiring board that can exhibit its functions over a long period of time.

【0013】[0013]

【課題を解決するための手段】本発明は、基板上に、複
数の有機樹脂絶縁層を多層に被着させるとともに該有機
樹脂絶縁層間に電源用薄膜配線導体層、接地用薄膜配線
導体層及び信号用薄膜配線導体層を配してなる多層配線
基板であって、前記電源用薄膜配線導体層及び接地用薄
膜配線導体層は、その各々が複数の開口を格子状に配し
たメッシュ状をなしており、かつ電源用薄膜配線導体層
の導体部が接地用薄膜配線導体層の開口に、また接地用
薄膜配線導体層の導体部が電源用薄膜配線導体層の開口
に各々対向していることを特徴とするものである。
According to the present invention, a plurality of organic resin insulating layers are applied in multiple layers on a substrate, and between the organic resin insulating layers, a thin film wiring conductor layer for power supply, a thin film wiring conductor layer for grounding, and A multilayer wiring board having a signal thin-film wiring conductor layer arranged therein, wherein each of the power supply thin-film wiring conductor layer and the ground thin-film wiring conductor layer has a mesh shape in which a plurality of openings are arranged in a grid. And the conductor of the thin-film wiring conductor layer for power supply faces the opening of the thin-film wiring conductor layer for grounding, and the conductor of the thin-film wiring conductor layer for grounding faces the opening of the thin-film wiring conductor layer for power supply. It is characterized by the following.

【0014】また本発明は、前記メッシュ状をなす電源
用薄膜配線導体層及び接地用薄膜配線導体層の各開口の
面積が2.5×10-3(mm2 )乃至90×10-3(m
2)であり、電源用薄膜配線導体層に設けた開口の全
開口面積が電源用薄膜配線導体層の全面積に対し5%乃
至30%、接地用薄膜配線導体層に設けた開口の全開口
面積が接地用薄膜配線導体層の全面積に対し5%乃至3
0%であることを特徴とするものである。
Further, according to the present invention, the area of each opening of the power supply thin-film wiring conductor layer and the grounding thin-film wiring conductor layer having a mesh shape is 2.5 × 10 −3 (mm 2 ) to 90 × 10 −3 (mm 2 ). m
m 2 ), the total opening area of the openings provided in the power supply thin film wiring conductor layer is 5% to 30% of the total area of the power supply thin film wiring conductor layer, and the total opening area provided in the grounding thin film wiring conductor layer is The opening area is 5% to 3% of the total area of the thin film wiring conductor layer for grounding.
0%.

【0015】本発明の多層配線基板によれば、絶縁基板
上に薄膜形成技術によって配線を形成したことから配線
の微細化が可能となり、配線を極めて高密度に形成する
ことが可能となる。
According to the multilayer wiring board of the present invention, since the wiring is formed on the insulating substrate by the thin film forming technique, the wiring can be miniaturized, and the wiring can be formed at an extremely high density.

【0016】また本発明の多層配線基板によれば、電源
用薄膜配線導体層及び接地用薄膜配線導体層を複数の開
口を格子状に配したメッシュ状となしたことから有機樹
脂絶縁層を熱硬化させる際、不要なガスが発生したとし
てもそのガスはメッシュの開口を通して外部に良好に放
出されて有機樹脂絶縁層と電源用及び接地用の薄膜配線
導体層との間に溜まることはなく、その結果、有機樹脂
絶縁層と電源用及び接地用の薄膜配線導体層は確実に密
着し、両者の接合強度を強固となすことができる。
Further, according to the multilayer wiring board of the present invention, since the thin-film wiring conductor layer for power supply and the thin-film wiring conductor layer for grounding are formed in a mesh shape in which a plurality of openings are arranged in a grid, the organic resin insulating layer can be heated. At the time of curing, even if unnecessary gas is generated, the gas is satisfactorily released to the outside through the opening of the mesh, and does not accumulate between the organic resin insulating layer and the thin film wiring conductor layer for power supply and ground, As a result, the organic resin insulating layer and the thin-film wiring conductor layers for power supply and ground are securely adhered to each other, and the bonding strength between them can be increased.

【0017】更に本発明の多層配線基板によれば、電源
用薄膜配線導体層の導体部を接地用薄膜配線導体層の開
口に、また接地用薄膜配線導体層の導体部を電源用薄膜
配線導体層の開口に各々対向させたことから電源用薄膜
配線導体層と接地用薄膜配線導体層の間に配される有機
樹脂絶縁層の厚みが薄く、上下に貫通するボイド(穴)
が形成されていたとしても電源用薄膜配線導体層と接地
用薄膜配線導体層とが電気的に短絡することは殆どな
く、その結果、多層配線基板としての機能を長期間にわ
たり発揮させることが可能となる。
Further, according to the multilayer wiring board of the present invention, the conductor of the thin-film wiring conductor layer for power supply is placed in the opening of the thin-film wiring conductor layer for grounding, and the conductor of the thin-film wiring conductor layer for ground is placed in the thin-film wiring conductor for power supply. The organic resin insulating layer disposed between the power supply thin-film wiring conductor layer and the grounding thin-film wiring conductor layer has a small thickness because it is opposed to the opening of each layer, and a void penetrates vertically.
Even when the thin film wiring conductor layer for power supply and the thin film wiring conductor layer for grounding are hardly electrically shorted, the function as a multilayer wiring board can be exhibited for a long period of time. Becomes

【0018】[0018]

【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。図1は、本発明の多層配線基板の一実
施例を示し、1は基板、2は多層配線部である。
Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a multilayer wiring board according to the present invention, wherein 1 is a board, and 2 is a multilayer wiring section.

【0019】前記基板1はその上面に4つの有機樹脂絶
縁層3a、3b、3c、3dと電源用薄膜配線導体層4
a、接地用薄膜配線導体層4b、信号用薄膜配線導体層
4c、4dの4つの薄膜配線導体層を交互に多層に配設
してなる多層配線部2が形成されており、該多層配線部
2を支持する支持部材として作用する。
The substrate 1 has four organic resin insulating layers 3a, 3b, 3c and 3d on its upper surface and a thin film wiring conductor layer 4 for power supply.
a, a multilayer wiring section 2 is formed by alternately arranging four thin-film wiring conductor layers of a thin-film wiring conductor layer 4b for grounding and signal thin-film wiring conductor layers 4c and 4d in multiple layers. 2 acts as a support member for supporting

【0020】前記基板1は酸化アルミニウム質焼結体や
ムライト質焼結体等の酸化物系セラミックス、或いは表
面に酸化物膜を有する窒化アルミニウム質焼結体、炭化
珪素質焼結体等の非酸化物系セラミックス、更にはガラ
ス繊維を織り込んだ布にエポキシ樹脂を含浸させたガラ
スエポキシ樹脂等の電気絶縁材料で形成されており、例
えば、酸化アルミニウム質焼結体で形成されている場合
には、アルミナ、シリカ、カルシア、マグネシア等の原
料粉末に適当な有機溶剤、溶媒を添加混合して泥漿状と
なすとともにこれを従来周知のドクターブレード法やカ
レンダーロール法を採用することによってセラミックグ
リーンシート(セラミック生シート)を形成し、しかる
後、前記セラミックグリーンシートに適当な打ち抜き加
工を施し、所定形状となすとともに高温(約1600
℃)で焼成することによって、或いはアルミナ等の原料
粉末に適当な有機溶剤、溶媒を添加混合して原料粉末を
調整するとともに該原料粉末をプレス成形機によって所
定形状に形成し、最後に前記成形体を約1600℃の温
度で焼成することによって製作され、またガラスエポキ
シ樹脂から成る場合は、例えば、ガラス繊維を織り込ん
だ布にエポキシ樹脂の前駆体を含浸させるとともに該エ
ポキシ樹脂前駆体を所定の温度で熱硬化させることによ
って製作される。
The substrate 1 is made of an oxide ceramic such as an aluminum oxide sintered body or a mullite sintered body, or a non-oxide ceramic such as an aluminum nitride sintered body or a silicon carbide sintered body having an oxide film on its surface. Oxide ceramics, and further made of an electrically insulating material such as glass epoxy resin impregnated with epoxy resin in a cloth woven with glass fiber, for example, when formed of aluminum oxide sintered body , Alumina, silica, calcia, magnesia, etc., an appropriate organic solvent and a solvent are added and mixed to form a slurry, which is then formed into a ceramic green sheet by using a conventionally known doctor blade method or calendar roll method. Ceramic green sheet), and after that, the ceramic green sheet is subjected to an appropriate punching process to obtain a predetermined shape. Hot together form (about 1600
C) or by mixing a raw material powder such as alumina with an appropriate organic solvent and solvent to adjust the raw material powder and form the raw material powder into a predetermined shape by a press molding machine. If the body is manufactured by firing the body at a temperature of about 1600 ° C. and is made of a glass epoxy resin, for example, a cloth woven of glass fibers is impregnated with the epoxy resin precursor and the epoxy resin precursor is filled in a predetermined manner. Manufactured by thermosetting at a temperature.

【0021】また前記基板1には上下両主面に貫通する
孔径が例えば、直径300μm〜500μmの貫通孔5
が形成されており、該貫通孔5の内壁には基板1の上下
両主面に導出する導電層6が被着されている。
The substrate 1 has a through hole 5 having a diameter of, for example, 300 μm to 500 μm which penetrates the upper and lower main surfaces.
A conductive layer 6 extending to both upper and lower main surfaces of the substrate 1 is attached to the inner wall of the through hole 5.

【0022】前記貫通孔5は後述する基板1の上面に形
成される多層配線部2の電源用薄膜配線導体層4a、接
地用薄膜配線導体層4b及び信号用薄膜配線導体層4
c、4dと外部電気回路とを電気的に接続する、或いは
基板1の上下両主面に多層配線部2を配設した場合には
両主面の多層配線部2の電源用薄膜配線導体層4a、接
地用薄膜配線導体層4b及び信号用薄膜配線導体層4
c、4d同士を電気的に接続する導電層6を形成するた
めの形成孔として作用し、基板1にドリル孔あけ加工法
を施すことによって基板1の所定位置に所定形状に形成
される。
The through-hole 5 is provided in the thin-film wiring conductor layer 4a for power supply, the thin-film wiring conductor layer 4b for grounding, and the thin-film wiring conductor layer 4 for signal of the multilayer wiring portion 2 formed on the upper surface of the substrate 1 described later.
c, 4d and an external electric circuit, or when the multilayer wiring portions 2 are arranged on both upper and lower main surfaces of the substrate 1, the thin film wiring conductor layers for power supply of the multilayer wiring portions 2 on both main surfaces. 4a, ground thin-film wiring conductor layer 4b and signal thin-film wiring conductor layer 4
The substrate 1 serves as a forming hole for forming a conductive layer 6 for electrically connecting the substrates 4 and 4d, and is formed in a predetermined shape at a predetermined position on the substrate 1 by performing a drilling method on the substrate 1.

【0023】更に前記貫通孔5の内壁及び基板1の上下
両主面に被着形成されている導電層6は例えば、銅やニ
ッケル等の金属材料からなり、従来周知のめっき法及び
エッチング法を採用することによって貫通孔5の内壁に
両端を基板1の上下両主面に導出させた状態で被着形成
される。
The conductive layer 6 formed on the inner wall of the through hole 5 and the upper and lower main surfaces of the substrate 1 is made of a metal material such as copper or nickel. By adopting, the both ends are attached to the inner wall of the through hole 5 with the both ends being led out to the upper and lower main surfaces of the substrate 1.

【0024】前記導電層6は基板1の主面に配設される
多層配線部2の各薄膜配線導体層4a、4b、4c、4
dを外部電気回路に電気的に接続したり、基板1の上下
両主面に配設される各々の多層配線部2の各薄膜配線導
体層4a、4b、4c、4d同士を電気的に接続する作
用をなす。
The conductive layer 6 is provided on each of the thin-film wiring conductor layers 4a, 4b, 4c, 4c of the multilayer wiring portion 2 disposed on the main surface of the substrate 1.
d is electrically connected to an external electric circuit or the thin film wiring conductor layers 4a, 4b, 4c, and 4d of the respective multilayer wiring portions 2 provided on the upper and lower main surfaces of the substrate 1 are electrically connected to each other. To act.

【0025】また前記基板1に形成した貫通孔5はその
内部にエポキシ樹脂からなる有機樹脂充填体7が充填さ
れており、該有機樹脂充填体7によって貫通孔5が完全
に埋められ、同時に有機樹脂充填体7の両端面が基板1
の上下両主面に被着させた導電層6の面と同一平面とな
っている。
The through-hole 5 formed in the substrate 1 is filled with an organic resin filler 7 made of epoxy resin. The through-hole 5 is completely filled with the organic resin filler 7, and the Both ends of the resin filler 7 are the substrate 1
Are flush with the surface of the conductive layer 6 deposited on the upper and lower main surfaces of the conductive layer.

【0026】前記有機樹脂充填体7は基板1の上面及び
/又は下面に後述する複数の有機樹脂絶縁層3a、3
b、3c、3dと電源用薄膜配線導体層4a、接地用薄
膜配線導体層4b、信号用薄膜配線導体層4c、4dと
からなる多層配線部2を形成する際、多層配線部2の各
有機樹脂絶縁層3a、3b、3c、3dと電源用薄膜配
線導体層4a、接地用薄膜配線導体層4b、信号用薄膜
配線導体層4c、4dの平坦化を維持する作用をなす。
The organic resin filler 7 is provided on the upper surface and / or lower surface of the substrate 1 with a plurality of organic resin insulating layers 3a,
b, 3c, 3d, the thin-film wiring conductor layer 4a for power supply, the thin-film wiring conductor layer 4b for grounding, and the thin-film wiring conductor layers 4c, 4d for signals, when forming the multi-layer wiring part 2, The resin insulating layers 3a, 3b, 3c, and 3d, the thin film wiring conductor layer for power supply 4a, the thin film wiring conductor layer for grounding 4b, and the thin film wiring conductor layers for signal 4c and 4d are kept flat.

【0027】なお、前記有機樹脂充填体7は基板1の貫
通孔5内にエポキシ樹脂の前駆体を充填し、しかる後、
これに80℃〜200℃の温度を0.5〜3時間印加
し、完全に熱硬化させることによって基板1の貫通孔5
内に充填される。
The organic resin filler 7 fills the through hole 5 of the substrate 1 with a precursor of an epoxy resin.
A temperature of 80 ° C. to 200 ° C. is applied to this for 0.5 to 3 hours, and the substrate is completely cured by heat.
Is filled in.

【0028】更に前記基板1はその上面に4つの有機樹
脂絶縁層3a、3b、3c、3dと電源用薄膜配線導体
層4a、接地用薄膜配線導体層4b及び信号用薄膜配線
導体層4c、4dとが交互に多層に配設された多層配線
部2が形成されており、かつ該電源用薄膜配線導体層4
a、接地用薄膜配線導体層4b及び信号用薄膜配線導体
層4c、4dの各々は導電層6と電気的に接続されてい
る。
Further, the substrate 1 has four organic resin insulating layers 3a, 3b, 3c, 3d, a power supply thin film wiring conductor layer 4a, a grounding thin film wiring conductor layer 4b, and a signal thin film wiring conductor layer 4c, 4d on the upper surface thereof. Are formed alternately in multiple layers, and the thin-film wiring conductor layer 4 for power supply is formed.
a, the ground thin-film wiring conductor layer 4b and the signal thin-film wiring conductor layers 4c, 4d are electrically connected to the conductive layer 6.

【0029】前記多層配線部2を構成する有機樹脂絶縁
層3a、3b、3c、3dは上下に位置する電源用薄膜
配線導体層4a、接地用薄膜配線導体層4b、信号用薄
膜配線導体層4c、4dの各々の電気的絶縁を図る作用
をなし、電源用薄膜配線導体層4a、接地用薄膜配線導
体層4bは電子部品Aに電力を供給するとともに信号用
薄膜配線導体層4c、4dの特性インピーダンスを整合
させる作用を、また信号用薄膜配線導体層4c、4dは
電子部品Aに電気信号を伝搬する作用をなす。
The organic resin insulating layers 3a, 3b, 3c, and 3d constituting the multilayer wiring section 2 are composed of a power supply thin-film wiring conductor layer 4a, a grounding thin-film wiring conductor layer 4b, and a signal thin-film wiring conductor layer 4c which are positioned above and below. , 4d function to provide electrical insulation, and the power supply thin-film wiring conductor layer 4a and the grounding thin-film wiring conductor layer 4b supply electric power to the electronic component A and have the characteristics of the signal thin-film wiring conductor layers 4c, 4d. The thin film wiring conductor layers for signals 4c and 4d have a function of matching impedance and a function of transmitting an electric signal to the electronic component A.

【0030】前記多層配線部2の各有機樹脂絶縁層3
a、3b、3c、3dはエポキシ樹脂、ビスマレイミド
ポリアジド樹脂、ポリフェニレンエーテル樹脂、ふっ素
樹脂等の有機樹脂から成り、例えば、エポキシ樹脂から
なる場合、ビスフェノールA型エポキシ樹脂、ノボラッ
ク型エポキシ樹脂、グリシジルエステル型エポキシ樹脂
等にアミン系硬化剤、イミダゾール系硬化剤、酸無水物
系硬化剤等の硬化剤を添加混合してペースト状のエポキ
シ樹脂前駆体を得るとともに該エポキシ樹脂前駆体を基
板1の上部にスピンコート法により被着させ、しかる
後、これを80〜200℃の熱で0.5〜3時間熱処理
し、熱硬化させることによって形成される。
Each organic resin insulating layer 3 of the multilayer wiring section 2
a, 3b, 3c, and 3d are made of an organic resin such as an epoxy resin, a bismaleimide polyazide resin, a polyphenylene ether resin, and a fluororesin. For example, when the epoxy resin is used, bisphenol A epoxy resin, novolak epoxy resin, and glycidyl A curing agent such as an amine-based curing agent, an imidazole-based curing agent, or an acid anhydride-based curing agent is added to and mixed with an ester-type epoxy resin to obtain a paste-like epoxy resin precursor, and the epoxy resin precursor is used for the substrate 1. It is formed on the upper portion by spin coating, followed by heat treatment at 80 to 200 ° C. for 0.5 to 3 hours and thermosetting.

【0031】また前記各有機樹脂絶縁層3a、3b、3
c、3dはその各々の所定位置に最小径が有機樹脂絶縁
層の厚みに対して約1.5倍程度のスルーホール8が形
成されており、該スルーホール8は後述する有機樹脂絶
縁層3a、3b、3c、3dを介して上下に位置する電
源用薄膜配線導体層4a、接地用薄膜配線導体層4b、
信号用薄膜配線導体層4c、4dの各々を電気的に接続
するスルーホール導体9を形成するための形成孔として
作用する。
Each of the organic resin insulating layers 3a, 3b, 3
In each of c and 3d, a through hole 8 having a minimum diameter of about 1.5 times the thickness of the organic resin insulating layer is formed at a predetermined position of each of the holes. , 3b, 3c, 3d, a power supply thin film wiring conductor layer 4a, a grounding thin film wiring conductor layer 4b,
It functions as a forming hole for forming a through-hole conductor 9 for electrically connecting each of the signal thin film wiring conductor layers 4c and 4d.

【0032】前記各有機樹脂絶縁層3a、3b、3c、
3dに設けるスルーホール8は、例えばフォトリソグラ
フィー技術、具体的には各有機樹脂絶縁層3a、3b、
3c、3d上にレジスト材を塗布するとともにこれに露
光・現像を施すことによって所定位置に所定形状の窓部
を形成し、次に前記レジスト材の窓部にエッチング液を
配し、レジスト材の窓部に位置する有機樹脂絶縁層3
a、3b、3c、3dを除去して、有機樹脂絶縁層3
a、3b、3c、3dに穴(スルーホール)を形成し、
最後に前記レジスト材を有機樹脂絶縁層3a、3b、3
c、3d上より剥離させ除去することによって行われ
る。
Each of the organic resin insulating layers 3a, 3b, 3c,
The through hole 8 provided in 3d is formed, for example, by a photolithography technique, specifically, each of the organic resin insulating layers 3a, 3b,
3c and 3d are coated with a resist material and exposed and developed to form a window of a predetermined shape at a predetermined position. Then, an etchant is disposed on the window of the resist material, and a resist material is formed. Organic resin insulation layer 3 located in window
a, 3b, 3c and 3d are removed, and the organic resin insulating layer 3 is removed.
forming holes (through holes) in a, 3b, 3c, 3d,
Finally, the resist material is applied to the organic resin insulating layers 3a, 3b, 3
c, 3d by peeling off from above and removing.

【0033】更に前記各有機樹脂絶縁層3a、3b、3
c、3dの各々の上面には所定パターンの電源用薄膜配
線導体層4a、接地用薄膜配線導体層4b及び信号用薄
膜配線導体層4c、4dが、また各有機樹脂絶縁層3
a、3b、3c、3dに設けたスルーホール8の内壁に
はスルーホール導体9が各々配設されており、スルーホ
ール導体9によって間に有機樹脂絶縁層3a、3b、3
c、3dを挟んで上下に位置する電源用薄膜配線導体層
4a、接地用薄膜配線導体層4b、信号用薄膜配線導体
層4c、4dの各々が電気的に接続されるようになって
いる。
Further, each of the organic resin insulating layers 3a, 3b, 3
On the upper surface of each of c and 3d, a thin-film conductor layer 4a for power supply, a thin-film conductor layer 4b for ground, and a thin-film conductor layer 4c and 4d for signal having a predetermined pattern are provided.
a, 3b, 3c, and 3d, through-hole conductors 9 are provided on the inner walls of the through-holes 8, and the organic resin insulating layers 3a, 3b, 3
Each of the power supply thin-film wiring conductor layer 4a, the grounding thin-film wiring conductor layer 4b, and the signal thin-film wiring conductor layers 4c and 4d which are located above and below the c and 3d are electrically connected.

【0034】前記各有機樹脂絶縁層3a、3b、3c、
3dの上面及びスルーホール8内に配設される電源用薄
膜配線導体層4a、接地用薄膜配線導体層4b、信号用
薄膜配線導体層4c、4d及びスルーホール導体9は
銅、金、アルミニウム等の金属材料を無電解メッキ法や
蒸着法、スパッタリング法等の薄膜形成技術及びフォト
リソグラフィー技術を採用することによって形成され、
例えば、銅で形成されている場合には、有機樹脂絶縁層
3a、3b、3c、3dの上面及びスルーホール8の内
表面に、硫酸銅0.06モル/リットル、ホルマリン
0.3モル/リットル、水酸化ナトリウム0.35モル
/リットル、エチレンジアミン四酢酸0.35モル/リ
ットルから成る無電解銅メッキ浴を用いて厚さ1μm乃
至40μmの銅層を被着させ、しかる後、前記銅層をフ
ォトリソグラフィー技術により所定パターンに加工する
ことによって各有機樹脂絶縁層3a、3b、3c、3d
間、及びスルーホール8の内壁に配設される。この場
合、電源用薄膜配線導体層4a、接地用薄膜配線導体層
4b、信号用薄膜配線導体層4c、4d及びスルーホー
ル導体9は薄膜形成技術により形成されることから配線
の微細化が可能であり、これによって電源用薄膜配線導
体層4a、接地用薄膜配線導体層4b、信号用薄膜配線
導体層4c、4dを極めて高密度に形成することが可能
となる。
Each of the organic resin insulating layers 3a, 3b, 3c,
The thin-film conductor layer 4a for power supply, the thin-film conductor layer 4b for grounding, the thin-film conductor layers 4c and 4d for signal, and the through-hole conductor 9 disposed in the upper surface of 3d and in the through-hole 8 are made of copper, gold, aluminum or the like. The metal material is formed by adopting a thin film forming technology such as an electroless plating method, a vapor deposition method, a sputtering method and a photolithography technology,
For example, when formed of copper, 0.06 mol / liter of copper sulfate and 0.3 mol / liter of formalin are provided on the upper surfaces of the organic resin insulating layers 3a, 3b, 3c, and 3d and the inner surface of the through hole 8. A copper layer having a thickness of 1 μm to 40 μm is deposited using an electroless copper plating bath consisting of 0.35 mol / l of sodium hydroxide and 0.35 mol / l of ethylenediaminetetraacetic acid. Each of the organic resin insulating layers 3a, 3b, 3c, 3d is processed into a predetermined pattern by photolithography technology.
It is arranged on the inner wall of the gap and the through hole 8. In this case, since the power supply thin film wiring conductor layer 4a, the grounding thin film wiring conductor layer 4b, the signal thin film wiring conductor layers 4c and 4d, and the through-hole conductor 9 are formed by a thin film forming technique, the wiring can be miniaturized. This makes it possible to form the power supply thin-film wiring conductor layer 4a, the grounding thin-film wiring conductor layer 4b, and the signal thin-film wiring conductor layers 4c and 4d at extremely high densities.

【0035】また前記電源用薄膜配線導体層4a及び接
地用薄膜配線導体層4bは流れる電流が大きく、その流
れる電流に耐え得るために広面積に形成されており、か
つ複数の開口Hを格子状に配したメッシュ状となってい
る。
The power supply thin-film wiring conductor layer 4a and the grounding thin-film wiring conductor layer 4b have a large flowing current and are formed in a wide area to withstand the flowing current. It is in the form of a mesh.

【0036】前記電源用薄膜配線導体層4a及び接地用
薄膜配線導体層4bを複数の開口Hを格子状に配したメ
ッシュ状としたのは有機樹脂絶縁層3a、3b等が熱硬
化時に発生する不要なガスを外部に良好に放出するため
であり、開口Hによって有機樹脂絶縁層3a、3bと電
源用薄膜配線導体層4a及び接地用薄膜配線導体層4b
との間に不要なガスが溜まることはなく、その結果、有
機樹脂絶縁層3a、3bと電源用薄膜配線導体層4a及
び接地用薄膜配線導体層4bとは密着し、各々の接合強
度を強固となすことができる。
The reason why the power supply thin film wiring conductor layer 4a and the grounding thin film wiring conductor layer 4b are formed in a mesh shape in which a plurality of openings H are arranged in a grid pattern is that the organic resin insulating layers 3a and 3b are generated during thermosetting. This is for satisfactorily releasing unnecessary gas to the outside. The openings H enable the organic resin insulating layers 3a and 3b, the power supply thin film wiring conductor layer 4a and the grounding thin film wiring conductor layer 4b.
Unnecessary gas does not accumulate in between, and as a result, the organic resin insulating layers 3a and 3b are in close contact with the power supply thin-film wiring conductor layer 4a and the grounding thin-film wiring conductor layer 4b, and the bonding strength of each is strengthened. Can be made.

【0037】前記電源用薄膜配線導体層4a及び接地用
薄膜配線導体層4bに設ける複数の開口Hはその各々の
開口面積が2.5×10-3(mm2 )未満で、かつ全開
口面積が電源用薄膜配線導体層4a及び接地用薄膜配線
導体層4bの各々の全面積に対し5%未満となると有機
樹脂絶縁層3a、3bが熱硬化する際に発生する不要な
ガスは外部に効率良く放出されるのが困難となり、また
開口面積が90×10-3(mm2 )を超え、かつ全開口
面積が電源用薄膜配線導体層4a及び接地用薄膜配線導
体層4bの各々の全面積に対し30%を超えると信号用
薄膜配線導体層4c、4dの特性インピーダンスが不整
合となり、電気信号を良好に伝搬させることができなく
なる危険性がある。従って、前記電源用薄膜配線導体層
4a及び接地用薄膜配線導体層4bに設ける複数の開口
Hはその各々の開口面積が2.5×10-3(mm2 )乃
至90×10-3(mm2 )、全開口面積が電源用薄膜配
線導体層4a及び接地用薄膜配線導体層4bの各々の全
面積に対し5%乃至30%であることが好ましい。
The plurality of openings H provided in the power supply thin-film wiring conductor layer 4a and the grounding thin-film wiring conductor layer 4b each have an opening area of less than 2.5 × 10 −3 (mm 2 ) and a total opening area. Is less than 5% of the total area of each of the power supply thin-film wiring conductor layer 4a and the grounding thin-film wiring conductor layer 4b, unnecessary gas generated when the organic resin insulating layers 3a and 3b are thermoset is efficiently discharged to the outside. It is difficult to discharge well, the opening area exceeds 90 × 10 −3 (mm 2 ), and the total opening area is the total area of each of the power supply thin-film wiring conductor layer 4a and the grounding thin-film wiring conductor layer 4b. If it exceeds 30%, the characteristic impedances of the signal thin film wiring conductor layers 4c and 4d become mismatched, and there is a risk that electric signals cannot be propagated well. Accordingly, the plurality of openings H provided in the power supply thin-film wiring conductor layer 4a and the grounding thin-film wiring conductor layer 4b have an opening area of 2.5 × 10 −3 (mm 2 ) to 90 × 10 −3 (mm). 2 ) The total opening area is preferably 5% to 30% of the total area of each of the power supply thin film wiring conductor layer 4a and the grounding thin film wiring conductor layer 4b.

【0038】更に前記電源用薄膜配線導体層4aの導体
部は間に有機樹脂絶縁層3bを挟んで接地用薄膜配線導
体層4bの開口Hと、また接地用薄膜配線導体層4bの
導体部は間に有機樹脂絶縁層3bを挟んで電源用薄膜配
線導体層4aの開口Hと各々対向している。そのため有
機樹脂絶縁層3bの厚みが薄く、上下に貫通するボイド
(穴)が形成されていたとしても電源用薄膜配線導体層
4aと接地用薄膜配線導体層4bとは電気的に短絡する
ことが殆どなく、その結果、多層配線基板としての機能
を長期間にわたり発揮させることが可能となる。
Further, the conductor of the power supply thin-film wiring conductor layer 4a has an opening H of the grounding thin-film wiring conductor layer 4b with the organic resin insulating layer 3b interposed therebetween, and the conductor of the grounding thin-film wiring conductor layer 4b has The openings H of the power supply thin film wiring conductor layer 4a are opposed to each other with the organic resin insulating layer 3b interposed therebetween. Therefore, even if the thickness of the organic resin insulating layer 3b is thin and a void (hole) penetrating vertically is formed, the power supply thin-film wiring conductor layer 4a and the grounding thin-film wiring conductor layer 4b can be electrically short-circuited. As a result, the function as a multilayer wiring board can be exhibited over a long period of time.

【0039】なお、前記有機樹脂絶縁層3a、3b、3
c、3dと電源用薄膜配線導体層4a、接地用薄膜配線
導体層4b、信号用薄膜配線導体層4c、4dとを交互
に多層に配設して形成される多層配線部2は各有機樹脂
絶縁層3a、3b、3c、3dの上面を中心線平均粗さ
(Ra)で0.05μm≦Ra≦5μmの粗面としてお
くと、有機樹脂絶縁層3a、3b、3c、3dと電源用
薄膜配線導体層4a、接地用薄膜配線導体層4b、信号
用薄膜配線導体層4c、4dとの接合及び上下に位置す
る有機樹脂絶縁層3a、3b、3c、3d同士の接合を
強固となすことができる。従って、前記多層配線部2の
各有機樹脂絶縁層3a、3b、3c、3dはその上面を
エッチング加工等によって粗し、中心線平均粗さ(R
a)で0.05μm≦Ra≦5μmの粗面としておくこ
とが好ましい。
The organic resin insulating layers 3a, 3b, 3
c, 3d and the thin-film wiring conductor layer 4a for power supply, the thin-film wiring conductor layer 4b for grounding, and the thin-film wiring conductor layers 4c, 4d for signals are alternately arranged in multiple layers. When the upper surfaces of the insulating layers 3a, 3b, 3c, and 3d are roughened to have a center line average roughness (Ra) of 0.05 μm ≦ Ra ≦ 5 μm, the organic resin insulating layers 3a, 3b, 3c, and 3d and the power supply thin film The bonding with the wiring conductor layer 4a, the thin-film wiring conductor layer 4b for grounding, and the thin-film wiring conductor layers 4c and 4d for signal and the bonding between the organic resin insulating layers 3a, 3b, 3c and 3d located above and below can be made strong. it can. Accordingly, the upper surface of each of the organic resin insulating layers 3a, 3b, 3c, and 3d of the multilayer wiring portion 2 is roughened by etching or the like, and the center line average roughness (R
It is preferable to set a rough surface of 0.05 μm ≦ Ra ≦ 5 μm in a).

【0040】また前記有機樹脂絶縁層3a、3b、3
c、3dはその各々の厚みが100μmを越えると有機
樹脂絶縁層3a、3b、3c、3dにフォトリソグラフ
ィー技術を採用することによってスルーホール8を形成
する際、エッチング加工時間が長くなって、スルーホー
ル8を所望する鮮明な形状に形成するのが困難となり、
また5μm未満となると有機樹脂絶縁層3a、3b、3
c、3dの上面に上下に位置する有機樹脂絶縁層3a、
3b、3c、3dの接合強度を上げるための粗面加工を
施す際、有機樹脂絶縁層3a、3b、3c、3dに不要
な穴が形成され、上下に位置する電源用薄膜配線導体層
4a、接地用薄膜配線導体層4b、信号用薄膜配線導体
層4c、4dに不要な電気的短絡を招来してしまう危険
性がある。
The organic resin insulating layers 3a, 3b, 3
When the thickness of each of the layers c and 3d exceeds 100 μm, the etching processing time becomes longer when the through holes 8 are formed by employing the photolithography technology for the organic resin insulating layers 3a, 3b, 3c and 3d. It becomes difficult to form the hole 8 into a desired sharp shape,
When the thickness is less than 5 μm, the organic resin insulating layers 3a, 3b, 3
c, 3d organic resin insulating layers 3a located on the upper surface
When roughening is performed to increase the bonding strength of 3b, 3c, and 3d, unnecessary holes are formed in the organic resin insulating layers 3a, 3b, 3c, and 3d, and the power supply thin film wiring conductor layers 4a, There is a risk that an unnecessary electrical short circuit may be caused in the grounding thin film wiring conductor layer 4b and the signal thin film wiring conductor layers 4c and 4d.

【0041】従って、前記有機樹脂絶縁層3a、3b、
3c、3dはその各々の厚みを5μm〜100μmの範
囲としておくことが好ましい。
Accordingly, the organic resin insulating layers 3a, 3b,
It is preferable that each of 3c and 3d has a thickness in the range of 5 μm to 100 μm.

【0042】更に前記多層配線部2の電源用薄膜配線導
体層4a、接地用薄膜配線導体層4b、及び信号用薄膜
配線導体層4c、4dはその厚みが1μm未満であると
その各々の電気抵抗が大きなものとなり、また40μm
を越えると電源用薄膜配線導体層4a、接地用薄膜配線
導体層4b、及び信号用薄膜配線導体層4c、4dを有
機樹脂絶縁層3a、3b、3c、3dに被着させる際に
電源用薄膜配線導体層4a、接地用薄膜配線導体層4
b、及び信号用薄膜配線導体層4c、4dの内部に大き
な応力が内在し、該内在応力によって電源用薄膜配線導
体層4a、接地用薄膜配線導体層4b、及び信号用薄膜
配線導体層4c、4dが有機樹脂絶縁層3a、3b、3
c、3dから剥離し易いものとなる。従って、前記多層
配線部2の電源用薄膜配線導体層4a、接地用薄膜配線
導体層4b、及び信号用薄膜配線導体層4c、4dの厚
みは1μm〜40μmの範囲としておくことが好まし
い。
Further, when the thickness of the power supply thin-film wiring conductor layer 4a, the grounding thin-film wiring conductor layer 4b, and the signal thin-film wiring conductor layers 4c and 4d of the multilayer wiring section 2 is less than 1 μm, their electrical resistances are reduced. Becomes large and 40 μm
Is exceeded, the power supply thin film conductor layer 4a, the ground thin film conductor layer 4b, and the signal thin film conductor layers 4c, 4d are applied to the organic resin insulating layers 3a, 3b, 3c, 3d. Wiring conductor layer 4a, thin-film wiring conductor layer 4 for grounding
b, and a large stress is present inside the signal thin-film wiring conductor layers 4c and 4d, and due to the intrinsic stress, the power supply thin-film wiring conductor layer 4a, the grounding thin-film wiring conductor layer 4b, and the signal thin-film wiring conductor layer 4c. 4d is an organic resin insulating layer 3a, 3b, 3
c and 3d are easily peeled off. Therefore, it is preferable that the thickness of the power supply thin-film wiring conductor layer 4a, the grounding thin-film wiring conductor layer 4b, and the signal thin-film wiring conductor layers 4c and 4d of the multilayer wiring part 2 be in the range of 1 μm to 40 μm.

【0043】前記有機樹脂絶縁層3a、3b、3c、3
dと電源用薄膜配線導体層4a、接地用薄膜配線導体層
4b、及び信号用薄膜配線導体層4c、4dとを交互に
多層に積層して形成される多層配線部2は更に、最上層
の有機樹脂絶縁層3dの上面に電源用薄膜配線導体層4
a、接地用薄膜配線導体層4b、及び信号用薄膜配線導
体層4c、4dと電気的に接続しているボンディングパ
ッド10が配設されている(図1では信号用薄膜配線導
体層4dに接続されたボンディングパッド10のみが記
載されている。)。
The organic resin insulating layers 3a, 3b, 3c, 3
d, the thin-film wiring conductor layer 4a for power supply, the thin-film wiring conductor layer 4b for grounding, and the thin-film wiring conductor layers 4c and 4d for signal are alternately laminated in multiple layers. The thin film wiring conductor layer 4 for power supply is formed on the upper surface of the organic resin insulating layer 3d.
a, a bonding pad 10 electrically connected to the thin film wiring conductor layer 4b for grounding and the thin film wiring conductor layers 4c and 4d for signal is provided (in FIG. 1, the bonding pad 10 is connected to the thin film wiring conductor layer 4d for signal). Only the bonding pad 10 is shown.)

【0044】前記ボンディングパッド10は、その上部
に半導体素子等の能動部品や容量素子、抵抗器等の受動
部品から成る電子部品Aの電源端子、接地端子及び信号
端子が熱圧着等により接合され、これによって半導体素
子等の能動部品及び容量素子、抵抗器等の受動部品から
成る電子部品Aが電源用薄膜配線導体層4a、接地用薄
膜配線導体層4b、及び信号用薄膜配線導体層4c、4
dに電気的に接続されることとなる。
The power supply terminal, the ground terminal, and the signal terminal of the electronic component A composed of an active component such as a semiconductor device, a capacitive device, and a passive component such as a resistor are bonded to the bonding pad 10 by thermocompression bonding or the like. As a result, the electronic component A composed of an active component such as a semiconductor device and a passive component such as a capacitor and a resistor is connected to the power supply thin-film wiring conductor layer 4a, the grounding thin-film wiring conductor layer 4b, and the signal thin-film wiring conductor layers 4c and 4c.
d will be electrically connected.

【0045】前記ボンディングパッド10は、電源用薄
膜配線導体層4a、接地用薄膜配線導体層4b、及び信
号用薄膜配線導体層4c、4dと同じ金属材料、具体的
には銅、ニッケル、金、アルミニウム等の金属材料から
成り、最上層の有機樹脂絶縁層3d上に電源用薄膜配線
導体層4a、接地用薄膜配線導体層4b、及び信号用薄
膜配線導体層4c、4dを形成する際に同時に前記電源
用薄膜配線導体層4a、接地用薄膜配線導体層4b、及
び信号用薄膜配線導体層4c、4dと電気的接続をもっ
て形成される。
The bonding pad 10 is made of the same metal material as the power supply thin-film wiring conductor layer 4a, the grounding thin-film wiring conductor layer 4b, and the signal thin-film wiring conductor layers 4c and 4d, specifically, copper, nickel, gold, It is made of a metal material such as aluminum, and is simultaneously formed with the power supply thin-film wiring conductor layer 4a, the grounding thin-film wiring conductor layer 4b, and the signal thin-film wiring conductor layers 4c and 4d on the uppermost organic resin insulating layer 3d. The thin film wiring conductor layer for power supply 4a, the thin film wiring conductor layer for grounding 4b, and the thin film wiring conductor layers for signal 4c and 4d are formed in electrical connection.

【0046】かくして本発明の多層配線基板によれば、
最上層の有機樹脂絶縁層3d表面に設けたボンディング
パッド10に半導体素子等の能動部品や容量素子、抵抗
器等の受動部品から成る電子部品Aの電源端子、接地端
子及び信号端子を熱圧着等により接合させ、電源用薄膜
配線導体層4a、接地用薄膜配線導体層4b、及び信号
用薄膜配線導体層4c、4dに電子部品Aを電気的に接
続させることによって半導体装置や混成集積回路装置と
なり、電源用薄膜配線導体層4a、接地用薄膜配線導体
層4b、及び信号用薄膜配線導体層4c、4dの一部を
外部電気回路に接続させれば前記半導体素子や容量素子
等は外部電気回路に電気的に接続されることとなる。
Thus, according to the multilayer wiring board of the present invention,
A power supply terminal, a ground terminal, and a signal terminal of an electronic component A including an active component such as a semiconductor device, a capacitance device, and a passive component such as a resistor are bonded to the bonding pad 10 provided on the surface of the uppermost organic resin insulating layer 3d by thermocompression bonding. The electronic component A is electrically connected to the power supply thin film wiring conductor layer 4a, the grounding thin film wiring conductor layer 4b, and the signal thin film wiring conductor layers 4c and 4d, thereby forming a semiconductor device or a hybrid integrated circuit device. If the power supply thin-film wiring conductor layer 4a, the grounding thin-film wiring conductor layer 4b, and a part of the signal thin-film wiring conductor layers 4c and 4d are connected to an external electric circuit, the semiconductor element and the capacitor element can be connected to the external electric circuit. Is electrically connected to the

【0047】なお、本発明は上述の実施例に限定される
もではなく、本発明の要旨を逸脱しない範囲であれば種
々の変更は可能であり、例えば、上述の実施例において
は基板1の上面のみに複数の有機樹脂絶縁層3a、3
b、3c、3dと電源用薄膜配線導体層4a、接地用薄
膜配線導体層4b、及び信号用薄膜配線導体層4c、4
dとを交互に多層に積層して形成される多層配線部2を
配設したが、該多層配線部2を基板1の下側のみに設け
ても、上下の両面に設けてもよい。
It should be noted that the present invention is not limited to the above-described embodiment, and various changes can be made without departing from the scope of the present invention. A plurality of organic resin insulating layers 3a, 3
b, 3c, 3d, the power supply thin film wiring conductor layer 4a, the grounding thin film wiring conductor layer 4b, and the signal thin film wiring conductor layers 4c, 4c
Although the multilayer wiring portion 2 is formed by alternately stacking the multilayer wiring portions d, the multilayer wiring portion 2 may be provided only on the lower side of the substrate 1 or on both upper and lower surfaces.

【0048】[0048]

【発明の効果】本発明の多層配線基板によれば、絶縁基
板上に薄膜形成技術によって配線を形成したことから配
線の微細化が可能となり、配線を極めて高密度に形成す
ることが可能となる。
According to the multilayer wiring board of the present invention, since the wiring is formed on the insulating substrate by the thin film forming technique, the wiring can be miniaturized and the wiring can be formed at an extremely high density. .

【0049】また本発明の多層配線基板によれば、電源
用薄膜配線導体層及び接地用薄膜配線導体層を複数の開
口を格子状に配したメッシュ状となしたことから有機樹
脂絶縁層を熱硬化させる際、不要なガスが発生したとし
てもそのガスはメッシュの開口を通して外部に良好に放
出されて有機樹脂絶縁層と電源用及び接地用の薄膜配線
導体層との間に溜まることはなく、その結果、有機樹脂
絶縁層と電源用及び接地用の薄膜配線導体層は確実に密
着し、両者の接合強度を強固となすことができる。
According to the multilayer wiring board of the present invention, since the thin film wiring conductor layer for power supply and the thin film wiring conductor layer for grounding are formed in a mesh shape in which a plurality of openings are arranged in a grid pattern, the organic resin insulating layer can be heated. At the time of curing, even if unnecessary gas is generated, the gas is satisfactorily released to the outside through the opening of the mesh, and does not accumulate between the organic resin insulating layer and the thin film wiring conductor layer for power supply and ground, As a result, the organic resin insulating layer and the thin-film wiring conductor layers for power supply and ground are securely adhered to each other, and the bonding strength between them can be increased.

【0050】更に本発明の多層配線基板によれば、電源
用薄膜配線導体層の導体部を接地用薄膜配線導体層の開
口に、また接地用薄膜配線導体層の導体部を電源用薄膜
配線導体層の開口に各々対向させたことから電源用薄膜
配線導体層と接地用薄膜配線導体層の間に配される有機
樹脂絶縁層の厚みが薄く、上下に貫通するボイド(穴)
が形成されていたとしても電源用薄膜配線導体層と接地
用薄膜配線導体層とが電気的に短絡することは殆どな
く、その結果、多層配線基板としての機能を長期間にわ
たり発揮させることが可能となる。
Further, according to the multilayer wiring board of the present invention, the conductor of the thin-film wiring conductor layer for power supply is provided in the opening of the thin-film wiring conductor layer for grounding, and the conductor of the thin-film wiring conductor layer for ground is connected to the thin-film wiring conductor for power supply. The organic resin insulating layer disposed between the power supply thin-film wiring conductor layer and the grounding thin-film wiring conductor layer has a small thickness because it is opposed to the opening of each layer, and a void penetrates vertically.
Even when the thin film wiring conductor layer for power supply and the thin film wiring conductor layer for grounding are hardly electrically shorted, the function as a multilayer wiring board can be exhibited for a long period of time. Becomes

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の多層配線基板の一実施例を示す断面図
である。
FIG. 1 is a sectional view showing one embodiment of a multilayer wiring board of the present invention.

【符号の説明】[Explanation of symbols]

1・・・基板 2・・・多層配線部 3a、3b、3c、3d・・有機樹脂絶縁層 4a・・・・・・・・・・・電源用薄膜配線導体層 4b・・・・・・・・・・・接地用薄膜配線導体層 4c、4d・・・・・・・・信号用薄膜配線導体層 A・・・・・・・・・・・・電子部品 H・・・・・・・・・・・・電源用薄膜配線導体層及び
接地用薄膜配線導体層に設けた開口
DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Multilayer wiring part 3a, 3b, 3c, 3d ... Organic resin insulation layer 4a ... Power supply thin film wiring conductor layer 4b ... ···· Thin-film wiring conductor layer for grounding 4c, 4d ······ Thin-film wiring conductor layer for signal A ··· Electronic components H ··· ..... Openings provided in power supply thin film wiring conductor layer and grounding thin film wiring conductor layer

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】基板上に、複数の有機樹脂絶縁層を多層に
被着させるとともに該有機樹脂絶縁層間に電源用薄膜配
線導体層、接地用薄膜配線導体層及び信号用薄膜配線導
体層を配してなる多層配線基板であって、前記電源用薄
膜配線導体層及び接地用薄膜配線導体層は、その各々が
複数の開口を格子状に配したメッシュ状をなしており、
かつ電源用薄膜配線導体層の導体部が接地用薄膜配線導
体層の開口に、また接地用薄膜配線導体層の導体部が電
源用薄膜配線導体層の開口に各々対向していることを特
徴とする多層配線基板。
A thin film wiring conductor layer for power supply, a thin film wiring conductor layer for grounding, and a thin film wiring conductor layer for signal are arranged between a plurality of organic resin insulating layers on a substrate. A multilayer wiring board comprising: the power supply thin-film wiring conductor layer and the grounding thin-film wiring conductor layer, each of which has a mesh shape in which a plurality of openings are arranged in a grid,
The conductor of the power supply thin film wiring conductor layer faces the opening of the grounding thin film wiring conductor layer, and the conductor of the grounding thin film wiring conductor layer faces the opening of the power supply thin film wiring conductor layer. Multilayer wiring board.
【請求項2】前記メッシュ状をなす電源用薄膜配線導体
層及び接地用薄膜配線導体層の各開口の面積が2.5×
10-3(mm2 )乃至90×10-3(mm2 )であり、
全開口面積が電源用薄膜配線導体層及び接地用薄膜配線
導体層の各々の全面積に対し5%乃至30%であること
を特徴とする請求項1に記載の多層配線基板。
2. An opening area of each of the power supply thin-film wiring conductor layer and the grounding thin-film wiring conductor layer having a mesh shape is 2.5 ×.
10 −3 (mm 2 ) to 90 × 10 −3 (mm 2 ),
2. The multilayer wiring board according to claim 1, wherein the total opening area is 5% to 30% of the total area of each of the power supply thin film wiring conductor layer and the grounding thin film wiring conductor layer.
JP8316445A 1996-11-27 1996-11-27 Multilayer wiring board Pending JPH10163634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8316445A JPH10163634A (en) 1996-11-27 1996-11-27 Multilayer wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8316445A JPH10163634A (en) 1996-11-27 1996-11-27 Multilayer wiring board

Publications (1)

Publication Number Publication Date
JPH10163634A true JPH10163634A (en) 1998-06-19

Family

ID=18077174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8316445A Pending JPH10163634A (en) 1996-11-27 1996-11-27 Multilayer wiring board

Country Status (1)

Country Link
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000018202A1 (en) * 1998-09-17 2000-03-30 Ibiden Co., Ltd. Multilayer build-up wiring board
JP2015233085A (en) * 2014-06-10 2015-12-24 新光電気工業株式会社 WIRING BOARD, SEMICONDUCTOR DEVICE, AND WIRING BOARD MANUFACTURING METHOD
WO2019198652A1 (en) * 2018-04-12 2019-10-17 住友電工プリントサーキット株式会社 Multilayer-flexible printed wiring board

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000018202A1 (en) * 1998-09-17 2000-03-30 Ibiden Co., Ltd. Multilayer build-up wiring board
US6613986B1 (en) 1998-09-17 2003-09-02 Ibiden Co., Ltd. Multilayer build-up wiring board
EP1868423A1 (en) * 1998-09-17 2007-12-19 Ibiden Co., Ltd. Multilayer build-up wiring board
US7514779B2 (en) 1998-09-17 2009-04-07 Ibiden Co., Ltd. Multilayer build-up wiring board
US7847318B2 (en) 1998-09-17 2010-12-07 Ibiden Co., Ltd. Multilayer build-up wiring board including a chip mount region
JP2015233085A (en) * 2014-06-10 2015-12-24 新光電気工業株式会社 WIRING BOARD, SEMICONDUCTOR DEVICE, AND WIRING BOARD MANUFACTURING METHOD
US9859201B2 (en) 2014-06-10 2018-01-02 Shinko Electric Industries Co., Ltd. Wiring substrate, semiconductor device, and method for manufacturing wiring substrate
WO2019198652A1 (en) * 2018-04-12 2019-10-17 住友電工プリントサーキット株式会社 Multilayer-flexible printed wiring board

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