JPH10170549A - Contact probe, method of manufacturing the same, and probe device provided with the contact probe - Google Patents

Abstract

(57) [Problem] To provide a contact probe capable of achieving high hardness and excellent toughness, and suppressing peeling and bending. A contact probe in which a plurality of pattern wirings (3) are formed on a film (2), and the respective tips of the pattern wirings are arranged so as to protrude from the film and serve as contact pins (3a). Is a high manganese alloy layer HM formed of a nickel-manganese alloy and having a manganese concentration set to 0.05% by weight or more, and a low manganese alloy layer LM set to a manganese concentration lower than the high manganese alloy layer. A technology having the following is adopted.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used as a probe pin, a socket pin, or the like, and is incorporated in a probe card, a test socket, or the like, and contacts each terminal of a semiconductor IC chip, a liquid crystal device, or the like to perform an electrical test. And a probe device having the same.

[0002]

2. Description of the Related Art In general, a contact pin is used to conduct an electrical test by contacting a semiconductor chip such as an IC chip or an LSI chip or each terminal of an LCD (liquid crystal display). In recent years, as the integration and miniaturization of IC chips and the like have increased, the pitch of contact pads, which are electrodes, has been reduced, and the pitch of contact pins has been required to be narrower. However, with a tungsten needle contact probe used as a contact pin, it has been difficult to cope with a multi-pin narrow pitch due to the limitation of the diameter of the tungsten needle.

On the other hand, for example, Japanese Patent Publication No. 7-820
No. 27 proposes a contact probe technique in which a plurality of pattern wirings are formed on a resin film, and the respective tips of the pattern wirings are arranged so as to protrude from the resin film and serve as contact pins. In this technology example, by using the contact pins at the tips of the plurality of pattern wirings, the pitch of the pins is reduced, and many complicated components are not required.

In the above-described contact probe, the amount of pressing of the contact pin is increased or decreased in order to obtain a desired contact pressure during a test. However, a large amount of pressing is required to obtain a large contact pressure. However,
The above contact probe has a tip portion of the pattern wiring,
That is, since the contact pin is formed of Ni (nickel), the hardness is only about Hv300, and the contact pin is bent or deformed due to excessive contact pressure due to low hardness, so that the pressing amount is reduced. And the contact pressure was not large. As a result, a contact pressure sufficient for electrical measurement cannot be obtained, causing a contact failure.

As a countermeasure, there is a method of adding an additive such as saccharin when forming Ni by plating. In this case, it is possible to maintain a hardness of Hv 350 or more at room temperature. Since S (sulfur) is contained in such additives, when heated at a high temperature, for example, at 300 ° C., there is an inconvenience that the hardness rapidly decreases to Hv 200 or less. For this reason, when the above-mentioned contact probe is sometimes put at a high temperature, it cannot be used particularly for a chip carrier for a burn-in test or the like.

Therefore, a contact probe made of a nickel-manganese (Ni-Mn) alloy has been proposed which has improved hardness and also has heat resistance and can stably maintain high hardness even after heating at a high temperature.

[0007]

The above-mentioned contact probe made of a Ni--Mn alloy needs to contain Mn at a certain concentration or more in order to improve the hardness. It has been found that the toughness of the pin decreases. For this reason, it is desired that a contact probe be improved in toughness while having sufficiently high hardness. In the case of manufacturing the contact probe, a stainless steel (SUS) substrate having copper (Cu) plated over its entire surface, which is patterned by a photolithography method, is plated with Ni and corresponds to a contact pin. The method of manufacturing the part is used. At this time, in the contact probe, the internal stress (tensile stress) tends to increase in proportion to the Mn concentration. When the internal stress of the Ni—Mn alloy plating film increases due to the Mn content, the interface between Cu and Ni is increased. In some cases, peeling may occur, or peeling may occur at the interface between the SUS substrate and Cu to break the Cu film. Furthermore, even when the above-mentioned problem does not occur, when the Ni-Mn alloy plating film is used as a contact pin, there is a problem that the contact pin is curved due to a large internal stress of the film and the pin height is not uniform. Was.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and provides a contact probe capable of obtaining high hardness, excellent in toughness, suppressing peeling and bending, a method of manufacturing the same, and a probe device having the contact probe. The purpose is to provide.

[0009]

The present invention has the following features to attain the object mentioned above. That is, in the contact probe according to claim 1, a plurality of pattern wirings are formed on the film, and each tip of the pattern wirings is arranged in a protruding state from the film to be a contact pin, and at least a contact probe is provided. The tip portion is formed of a nickel-manganese alloy, and includes a high hardness layer having a manganese concentration set to 0.05% by weight or more and a stress relaxation layer set to a manganese concentration lower than the high hardness layer. The equipped technology is adopted.

[0010] In this contact probe, the high manganese alloy layer is made of Ni-Mn having a manganese concentration of 0.05% by weight or more.
Since it is an alloy, after heating at room temperature and high temperature,
Even after heating at 0 ° C., a high hardness of at least Hv350 is obtained, and the low manganese alloy layer is formed of a Ni-Mn alloy having a lower manganese concentration than the high manganese alloy layer, so that the single manganese alloy layer is formed. As a result, the contact pin as a whole has high hardness and excellent toughness.

[0011] In the contact probe according to the second aspect,
2. The contact probe according to claim 1, wherein the high manganese alloy layer has a manganese concentration of 1.5% by weight or less.

In this contact probe, if the Mn concentration exceeds 1.5% by weight, the Ni—Mn alloy is very brittle and the toughness is greatly reduced. By setting, not only the toughness is maintained only by the low manganese alloy layer, but also the high manganese alloy layer itself is given appropriate toughness as a contact probe.

[0013] In the contact probe according to the third aspect,
The contact probe according to claim 1 or 2,
The low manganese alloy layer employs a technology in which the manganese concentration in the thickness direction is gradually increased toward the high manganese alloy layer.

In this contact probe, since the Mn concentration of the low manganese alloy layer is set to be gradually higher, the Mn concentration is gradient in the thickness direction of the low manganese alloy layer, and the difference between the high manganese alloy layer and the low manganese alloy layer is increased. By gradually reducing the difference in Mn concentration, sharp changes in hardness and toughness at the interface between the two layers are alleviated. Therefore, the warpage of the contact pins caused by the difference in the coefficient of thermal expansion between the two layers is greatly reduced.

In the contact probe according to the fourth aspect,
The contact probe according to any one of claims 1 to 3, wherein a technique is employed in which a metal film is directly attached to the film.

In this contact probe, even if the film is, for example, a resin film which easily absorbs moisture and stretches, a metal film is directly attached to the film. Thereby, elongation of the film is suppressed. In other words, the distance between the contact pins is less likely to be shifted, and the tip portion is accurately and accurately contacted with the object to be measured. Therefore, it is possible to prevent damage or the like caused by the tip made of a high-hardness Ni-Mn alloy coming into contact with a place other than the terminal of the measurement object such as an IC chip or an LCD. Furthermore, the metal film can be used as a ground, thereby enabling impedance matching to be performed near the tip of the contact probe and preventing adverse effects due to reflected noise even when performing a test in a high frequency range. it can. That is, if the characteristic impedance between the board wiring side and the contact pin does not match in the middle of the transmission line from the tester called a prober, reflected noise will occur. In this case, the longer the transmission line with a different characteristic impedance is, the larger the reflected noise will be. There is a problem that occurs. Reflected noise causes signal distortion, and tends to cause malfunction at higher frequencies. In the present contact probe, by using the metal film as the ground, the deviation of the characteristic impedance from the substrate wiring side can be minimized to the vicinity of the contact pin tip, and the malfunction due to the reflection noise can be suppressed.

In the contact probe according to the fifth aspect,
The contact probe according to claim 4, wherein a technique is employed in which a second film is directly attached to the metal film.

In this contact probe, since the second film is directly attached to the metal film, when the wiring substrate is disposed above the metal film, the wiring pattern on the substrate side of the wiring substrate is not provided. Since the wiring and other wiring do not directly contact the metal film, a short circuit can be prevented. In addition, if the metal film is simply attached on the resin film and the metal film is exposed, the oxidation proceeds in the air because the metal film is exposed. Coating the film to prevent its oxidation.

According to a sixth aspect of the present invention, in the probe device, the contact probe according to any one of the first to fifth aspects, and a ferroelastic film disposed on the film and projecting from the film shorter than the contact pins, A technology including a support member for supporting the ferroelastic film and the contact probe is employed.

In this probe device, the ferroelastic film is provided, and since the ferroelastic film presses the tip side of the contact pin from above, even if the pin tip is curved upward, the Ni-Mn alloy A uniform contact pressure can be obtained for each pin formed by the above. That is, since the tip portion can be reliably brought into contact with the object to be measured, measurement errors due to poor contact can be further reduced.

According to a seventh aspect of the present invention, in the probe device according to the sixth aspect, the film is made of a material larger than the ferroelastic film so that the ferroelastic film acts as a buffer when the contact pins are pressed. A technology that is formed long on the tip side is employed.

In this probe device, since the film is formed longer on the distal end side than the ferroelastic film and serves as a cushioning material when the contact pin is pressed, even if the film is used repeatedly, The contact pin is not distorted and curved due to friction with the film, and stable contact with the measurement object can be maintained. Therefore, the contact pressure of the tip portion formed of a high hardness Ni-Mn alloy can be obtained uniformly over a long period of time.

In the method of manufacturing a contact probe according to the present invention, a plurality of pattern wirings are formed on a film, and the respective tips of the pattern wirings are arranged so as to protrude from the film to form contact pins. A method for forming a first metal layer on a substrate layer, the first metal layer being made of a material that is attached to or bonded to the material of the contact pin, and a mask on the first metal layer. A plating step of forming a second metal layer to be provided to the contact pins with a nickel-manganese alloy by plating on an unmasked portion, and forming a second metal layer on the second metal layer from which the mask has been removed. A film applying step of applying the film covering a portion other than a portion provided to the contact pin, and a portion comprising the film and a second metal layer And a separation step of separating the substrate layer and the portion made of the first metal layer, wherein the plating step includes a high manganese alloy layer having a manganese concentration set to 0.05% by weight or more. Forming a high-hardness layer, and forming a low-manganese alloy layer having a manganese concentration lower than the high-manganese alloy layer. A technique of performing a layer forming process and forming the second metal layer by laminating the low manganese alloy layer and the high manganese alloy layer in this order is adopted.

In this method of manufacturing a contact probe,
First, in the stress relaxation layer forming step, a low manganese alloy layer having a low manganese concentration is formed by plating, and in the high hardness layer forming step, the high manganese concentration is 0.05% by weight or more on the low manganese alloy layer. A high manganese alloy layer is formed by plating and laminated. That is, since the low manganese alloy layer formed first by plating has a lower manganese concentration than the high manganese alloy layer, the stress generated in the early stage of electrodeposition is reduced by the low manganese alloy layer. Therefore, the bending of the entire second metal layer, the separation from the first metal layer, the tearing of the first metal layer, and the like, which occur due to the stress being carried over during the film growth process, are suppressed.

According to a ninth aspect of the present invention, in the method for manufacturing a contact probe according to the eighth aspect, in the stress relaxation layer forming step, the manganese concentration is gradually increased to form the low manganese alloy layer. Technology is adopted.

In this method of manufacturing a contact probe,
In the stress relaxation layer forming step, since the low manganese alloy layer is formed by plating by gradually increasing the Mn concentration, the Mn concentration is gradient in the thickness direction of the low manganese alloy layer, and the high manganese alloy layer and the low manganese alloy layer Is gradually reduced. Therefore, a sharp change in the Mn concentration at the interface between the two layers is alleviated, and stress concentration at the time of plating at the interface is suppressed.

[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of a contact probe according to the present invention will be described below with reference to FIGS. In these figures, reference numeral 1 denotes a contact probe, 2 denotes a resin film, and 3 denotes a pattern wiring.

As shown in FIGS. 1 and 2, the contact probe 1 of the present embodiment has a polyimide resin film 2
Has a structure in which a pattern wiring 3 made of metal is adhered to one surface of the resin film 2.
In addition, the tip of the pattern wiring 3 protrudes from an end of the resin film 2 (that is, each side of the central opening K) to form a contact pin 3a. At the rear end of the pattern wiring 3, a contact terminal 3b to be contacted with a contact pin on the tester side is formed.

The pattern wiring 3 is formed of a Ni—Mn alloy (second metal layer), and the contact pins 3a are formed by coating Au on the surface. The pattern wiring 3 and the contact pin 3a are disposed on the resin film 2 side and have a Mn concentration of 0.05 wt% to 1.
High manganese alloy layer HM set within the range of 5% by weight
And a low manganese alloy layer LM having a lower Mn concentration than the high manganese alloy layer HM. The low manganese alloy layer LM has a thickness of M
The n concentration is set gradually higher toward the high manganese alloy layer HM. Reference numeral 4 denotes an alignment hole described later.

Next, with reference to FIG. 3, the steps of manufacturing the contact probe 1 will be described in the order of steps.

[Base Metal Layer Forming Step (First Metal Layer Forming Step)] First, as shown in FIG. 3A, a base metal plate 5 made of stainless steel is plated with Cu (copper). A metal layer (first metal layer) 6 is formed.

[Pattern Forming Step] After a photoresist layer 7 is formed on the base metal layer 6, as shown in FIG. 3B, a predetermined pattern is formed on the photoresist layer 7 by photolithography. A photomask 8 is applied and exposed, and as shown in FIG.
Is developed to remove the portion to be the pattern wiring 3 and form an opening 7a in the remaining photoresist layer (mask) 7.

In the present embodiment, the photoresist layer 7 is formed of a negative type photoresist, but a desired opening 7a is formed by employing a positive type photoresist.
May be formed. In the present embodiment,
The photoresist layer 7 corresponds to a “mask” in the present invention. However, the “mask” in the claims of the present application is:
Like the photoresist layer 7 of the present embodiment, the present invention is not limited to the one in which the opening 7a is formed through the exposure and development steps using the photomask 8. For example, a hole is formed in advance in a portion to be plated (that is, in advance,
A film or the like (formed in a state indicated by reference numeral 7 in FIG. 3C) may be used. In the present invention, when such a film or the like is used as a “mask”, the pattern forming step in the present embodiment is unnecessary.

[Plating Step] Then, FIG.
As shown in FIG. 5, the Ni—Mn alloy layer (second metal layer) N serving as the pattern wiring 3 is divided into a “stress relaxation layer forming step” and a “hard layer forming step” by electrolytic plating in the opening 7a. It is formed by processing.

<Stress Relaxing Layer Forming Step> First, a low manganese alloy layer LM having a low manganese concentration is formed on the base metal layer 6 by plating. At this time, as an example of the composition of the plating solution in order to contain Mn, using a sulfamate Ni bath to which Mn sulfamate is added, controlling the amount of Mn in the plating solution and the current density when plating, Next, the Mn concentration is set lower than the high manganese alloy layer HM to be plated. In the present embodiment, the current density is gradually increased, and the Mn concentration is gradually increased in the thickness direction. In the present embodiment, the thickness of the low manganese alloy layer LM is set in a range from several μm to several tens μm.

<High Hardness Layer Forming Step> Further, on the low manganese alloy layer LM, a high manganese alloy layer HM which is a high hardness layer having a Mn concentration in the range of 0.05% by weight to 1.5% by weight is formed by plating. And laminate. At this time, Mn in the plating solution
The Mn concentration is set higher than the low manganese alloy layer LM by controlling the amount and the current density during plating. In this embodiment, the thickness of the high manganese alloy layer HM is set to about 40 μm.

After the above plating, the photoresist layer 7 is removed as shown in FIG.

[Film Adhering Step] Next, FIG.
As shown in the above, on the Ni-Mn alloy layer N,
In addition to the tip of the pattern wiring 3 shown in FIG.
Are adhered by the adhesive 2a. This resin film 2
This is a two-layer tape in which a metal film (copper foil) 500 is integrally provided on a polyimide resin PI. Before this film deposition step, the metal film 500 of the two-layer tape
Then, copper etching using photoengraving technology is applied to form a ground plane, and in this film deposition step,
The polyimide resin PI of the two-layer tape is adhered to the Ni-Mn alloy layer N via the adhesive 2a. The metal film 500 may be made of Ni, Ni alloy or the like in addition to the copper foil.

[Separation Step] Then, as shown in FIG. 3 (g), after the portion composed of the resin film 2, the pattern wiring 3 and the base metal layer 6 is separated from the supporting metal plate 5, Cu etching is performed. After the ultrasonic cleaning, only the pattern wiring 3 is bonded to the resin film 2.

[Gold Coating Process] Then, as shown in FIG.
Plating is applied to form an Au layer AU on the surface. At this time, the Au layer AU is formed on the entire surface of the contact pins 3a protruding from the resin film 2 over the entire circumference.

Through the above steps, the contact probe 1 in which the pattern wiring 3 is adhered to the resin film 2 as shown in FIGS. 1 and 2 is manufactured.

In the method of manufacturing the contact probe 1, a low manganese alloy layer LM having a low manganese concentration is first formed by plating in a stress relaxation layer forming step, and further, manganese is formed on the low manganese alloy layer LM in a high hardness layer forming step. A high manganese alloy layer HM which is a high hardness layer having a concentration of 0.05% by weight or more is formed by plating and laminated.

That is, since the low manganese alloy layer LM formed first by plating has a lower manganese concentration than the high manganese alloy layer HM, the stress generated at the initial stage of electrodeposition is reduced by the low manganese alloy layer LM. Accordingly, the curvature of the entire Ni—Mn alloy layer N, which is generated by the stress being carried over during the film growth process, peeling from the base metal layer 6 and tearing of the base metal layer 6 are suppressed.

In the step of forming the stress relaxation layer, Mn
Since the low manganese alloy layer LM is formed by plating with the concentration gradually increased, the Mn concentration is gradient in the thickness direction of the low manganese alloy layer LM, and the Mn concentration of the high manganese alloy layer HM and the low manganese alloy layer LM is reduced. The difference is gradually reduced. Therefore, a sharp change in the Mn concentration at the interface between the two layers is alleviated, and stress concentration at the time of plating at the interface is suppressed.

Next, an example in which the contact probe 1 is applied to a probe device used for a burn-in test or the like, that is, a so-called chip carrier, will be described with reference to FIGS. In these figures, reference numeral 10 denotes a probe device, 11 denotes a frame body, 12 denotes a positioning plate, 13
Denotes an upper plate, 14 denotes a clamper, and 15 denotes a lower plate. Note that the contact probe according to the present invention functions as a flexible substrate when incorporated in a probe device because the contact probe as a whole is flexible and easily bent.

As shown in FIGS. 4 and 5, the probe device 10 includes a frame main body 11, a positioning plate 12 fixed inside the frame main body and having an opening formed in the center.
The contact probe 1 includes an upper plate (supporting member) 13 for holding the contact probe 1 from above and supporting the same, and a clamper 14 for urging the upper plate 13 from above and fixing the upper plate 13 to the frame body 11. Further, a lower plate 15 for mounting and holding the IC chip I is attached to a lower portion of the frame main body 11 by a bolt 15a.

The central opening K and the contact pin 3a of the contact probe 1 are formed in the shape and the shape of the IC chip I.
It is formed corresponding to the arrangement of the contact pads on the C chip I, and the contact state between the contact pins 3a and the contact pads of the IC chip I can be monitored from the central opening K. Notches are formed in the corners of the central opening K so that the contact probe 1 can be easily assembled.
Can be deformed.

The contact terminal 3 of the contact probe 1
b is set wider than the pitch of the contact pins 3a so that the contact pads of the IC chip I having a narrower pitch and the tester side contact pins having a wider pitch than the contact pads can be easily matched. .

Note that contact pads are not formed on all four sides of the IC chip I, and if the contact pads are arranged on some of the sides, at least the center opening K corresponding to at least some of the sides is formed. It is sufficient to provide the contact pins 3a only on the sides, but in order to stably hold the IC chip I, it is preferable to form the contact pins 3a on two opposing sides and press both opposing sides of the IC chip I. .

A procedure for attaching the IC chip I to the probe device 10 will be described. [Temporary Assembly Step] First, the positioning plate 12 is
And the contact probe 1
Are arranged so that the central opening K and the opening of the frame body 11 are aligned. Then, the upper plate 13 is placed on the central opening K with the openings similarly aligned, and the frame main body 1 is placed on the upper plate 13 from above.
1 is engaged with the clamper 14. Since the clamper 14 is a kind of leaf spring having a bent portion in the center, the clamper 14 has a function of pressing and fixing the upper plate 13 in the locked state.

In the above assembled state, an opening is provided at the center, and the IC chip I is attached to this portion, so that the attached IC chip I can be observed from above the opening. The upper plate 13 and the clamper 14 are formed in a substantially rectangular shape on a plane, and as shown in FIG. 5, are assembled so that the contact terminals 3b of the contact probe 1 project outward from the long sides.

The lower surface of the upper plate 13 is inclined near the opening at a predetermined inclination angle, and as shown in FIG. 6, the contact pin 3a of the contact probe 1 is inclined downward at a predetermined angle. The IC chip I is placed on the lower plate 15 with the wiring side facing upward. In this state, the lower plate 15 is temporarily fixed to the frame main body 11 from below. At this time, since the distance between the tip of the contact pin 3a of the contact probe 1 and the upper surface of the lower plate 15 is set smaller than the thickness of the IC chip I by a predetermined amount, the IC chip I is sandwiched between the contact pin 3a and the lower plate 15. You.

[Positioning Step] Further, while observing the position of the contact pad of the IC chip I with respect to the tip of the contact pin 3a from above the opening, the positioning plate 12 is moved or the IC chip I is moved with a needle jig or the like. And fine adjustment is set so that the corresponding tip of the contact pin 3a and the contact pad coincide with each other and come into contact with each other.

When the dicing accuracy of the IC chip I is high and the outer shape and the position of the contact pad are relatively stable, the positional relationship between the positioning plate 12 and the contact probe 1 must be adjusted in advance. By fixedly assembling, it is possible to match the contact pin 3a with the contact pad without performing the fine adjustment. Thus, the step of aligning the IC chip I becomes unnecessary, and the work of mounting the IC chip I can be performed efficiently and easily.

[Fixing Step] After the positioning step, the lower plate 15 is fixed to the frame body 11 in full scale. At this time, so-called overdrive is applied to the contact pin 3a in the inclined state, and the contact pin 3a is pressed with a predetermined pressing force.
a The tip and the contact pad are in contact with each other to be reliably electrically connected. This state is very similar to the state where the IC chip I is mounted on a so-called multi-chip module or the like, and the operation state of the IC chip I almost mounted can be tested with high reliability.

When a bump is provided at the contact pad of the IC chip I or the tip of the contact pin 3a of the contact probe 1, overdrive can be applied in the height range of the bump. It does not have to be installed inclining in advance.
This probe device 10 is about 1 inch square (about 2.5 cm
This is a chip carrier having a small angle, and is suitable for a dynamic burn-in test or the like.

In the probe device 10, the contact pin 3a of the contact probe 1 has a manganese concentration of 0.0
Since the high manganese alloy layer HM which is a Ni-Mn alloy of 5% by weight or more is provided, high hardness of Hv 350 or more can be obtained even after heating at room temperature and high temperature, that is, even after heating at 500 ° C. Further, the contact pin 3a is made of a low manganese alloy layer LM having a lower manganese concentration than the high manganese alloy layer HM.
, The toughness is higher than when formed with a single high manganese alloy layer HM. Therefore, high hardness and excellent toughness are obtained as the contact pin 3a as a whole.

When the Mn concentration exceeds 1.5% by weight, the contact pin 3a becomes very brittle and the toughness is greatly reduced, so that the high manganese alloy layer HM falls within the above range. By setting the Mn concentration, not only the low manganese alloy layer LM maintains the toughness but also the high manganese alloy layer HM itself has an appropriate toughness as a contact probe.

Further, since the Mn concentration of the low manganese alloy layer LM is set to be gradually higher in the contact pin 3a, the Mn concentration is gradient in the thickness direction of the low manganese alloy layer LM, and the low manganese alloy layer LM and the low manganese alloy layer HM Manganese alloy layer L
By gradually reducing the difference in Mn concentration from M, sharp changes in hardness and toughness at the interface between both layers are alleviated. Therefore, the warpage of the contact pin 3a caused by the difference in the coefficient of thermal expansion between the two layers is greatly reduced.

The probe device 10 incorporating the contact probe 1 is particularly suitable as a chip carrier used in a reliability test involving high-temperature heating such as a burn-in test. In the first embodiment, the contact probe 1 is used as the probe device 1 which is a chip carrier.
Although it was applied to 0, it may be adopted for other measuring jigs and the like.

Next, as a second embodiment, a configuration in which the contact probe 16 according to the present invention is adopted as an IC probe and assembled into a mechanical part 60 to form a probe device (probe card) 70 will be described with reference to FIGS. This will be described with reference to FIG.

FIGS. 7 and 8 show the contact probe 1.
FIG. 9 is a diagram showing an IC probe 6 cut out into a predetermined shape, and FIG. 9 is a cross-sectional view taken along line CC of FIG.
As shown in FIG. 8, the resin film 2 of the contact probe 16 is provided with positioning holes 2b and 2c for positioning and fixing the contact probe 16, and a signal obtained from the pattern wiring 3 is provided. The printed circuit board 20 via the contact terminals 3b which are the wiring for drawing out
(See FIG. 10).

The mechanical part 60 comprises a mounting base 30, a top clamp 40 and a bottom clamp 50, as shown in FIG. First, the top clamp 40 is mounted on the printed circuit board 20. Next, the mounting base 30 to which the contact probe 16 has been
Then, a bolt 42 is screwed into the mounting member 1 (see FIG. 11). Then, by holding down the contact probe 16 with the bottom clamp 50, the pattern wiring 3 is maintained in a constant inclined state, and the contact pins 3a of the pattern wiring 3 are pressed against the IC chip.

FIG. 11 shows the probe device 70 after the assembly is completed.
Is shown. FIG. 12 is a sectional view taken along line EE of FIG. As shown in FIG. 12, the tip of the pattern wiring 3, that is, the contact pin 3a is
Is in contact with the IC chip I.

The mounting base 30 is provided with a positioning pin 31 for adjusting the position of the contact probe 16. By inserting the positioning pin 31 into the positioning hole 2 b of the contact probe 16, a pattern is formed. The wiring 3 and the IC chip I can be accurately positioned. The elastic body 51 of the bottom clamp 50 is pressed against the pattern wiring 3 in the portion of the window 2 d provided in the contact probe 16 to bring the contact terminal 3 b into contact with the electrode 21 of the printed circuit board 20. Signal 21
Can be communicated to the outside.

The probe device 70 configured as described above
When performing a probe test or the like of the IC chip I using the probe device 70, the probe device 70 is inserted into the prober and electrically connected to the tester, and a predetermined electric signal is transmitted from the contact pins 3a of the pattern wiring 3 to the wafer. By sending the signal to the IC chip I, the output signal from the IC chip I is transmitted from the contact pin 3a to the tester, and the electrical characteristics of the IC chip I are measured.

In the contact probe 16 and the probe device 70 incorporating the same, as in the first embodiment, the contact pin 3a has a manganese concentration of 0.05 to 0.05.
Since the high manganese alloy layer HM, which is a Ni—Mn alloy in the range of 1.5% by weight, and the low manganese alloy layer LM having a manganese concentration lower than the high manganese alloy layer HM and having a concentration gradient, are provided. High hardness (Hv 350 or more) and excellent toughness can be obtained as the pin 3a as a whole.

Next, referring to FIG. 13 to FIG.
An embodiment will be described. In the present embodiment, the contact probe 16 cut out into a predetermined shape for an IC probe in the second embodiment is used instead by being cut out into a predetermined shape for an LCD probe. LCD
The contact probe cut out for the use probe is indicated by reference numeral 200 in FIGS. 13 to 15, and 201 is a resin film.

As shown in FIG. 16, an LCD probe device (probe device) 100 has a structure in which a contact probe holding body (support member) 110 is fixed to a frame-shaped frame 120. The tip of the contact pin 3a protruding from the holding body 110 is LC
D (liquid crystal display) 90 is in contact with a terminal (not shown).

As shown in FIG. 15, the contact probe holding body 110 has a top clamp 111 and a bottom clamp 115. The top clamp 111 is provided with a first projection 112 for holding the tip of the contact pin 3a.
ABIC (wiring board having board-side pattern wiring) 3
It has a second projection 113 for holding the terminal 301 on the 00 side and a third projection 114 for holding the lead. The bottom clamp 115 includes an inclined plate 116, a mounting plate 117, and a bottom plate 118.

The contact probe 200 is moved to the inclined plate 116.
And the terminals 301 of the TABIC 300 are connected to the resin films 201 and 20 of the contact probe 200.
Place it so that it is located between the two. Thereafter, the top clamp 111 is mounted on the resin film 201 such that the first protrusion 112 is on the resin film 201 and the second protrusion 113 is in contact with the terminal 301, and is assembled with a bolt.

As shown in FIG. 17, the contact probe holding body 110 is manufactured by incorporating the contact probe 200 and combining the top clamp 111 and the bottom clamp 115 with the bolt 130.

The contact probe holding body 110 is
As shown in FIG.
Assembled in the CD probe device 100. In order to perform an electrical test of the LCD 90 using the LCD probe device 100, the contact pins 3 a of the LCD probe device 100 are obtained from the contact pins 3 a with the tips of the contact pins 3 a being in contact with the terminals (not shown) of the LCD 90. This is performed by taking out the output signal through the TABIC 300 to the outside.

In the above-described LCD probe device 100, L
A high manganese alloy in which the contact pin 3a to be brought into contact with the terminal of the CD90 is a Ni—Mn alloy having a manganese concentration in the range of 0.05 to 1.5% by weight, similarly to the first and second embodiments. Since the layer includes the layer HM and the low manganese alloy layer LM having a manganese concentration lower than the high manganese alloy layer HM and having a concentration gradient, the contact pin 3a as a whole has high hardness (Hv 350 or more) and excellent toughness.

Next, referring to FIG. 19 to FIG.
An embodiment will be described. As shown in FIG. 19, the contact probe 20 described in the third embodiment
In addition to the normal tip S, the contact pin 3a at 0 has a tip S1 curved upward and a tip S2 curved downward due to some residual stress during plating or due to other factors. There are cases.

In this case, as shown in FIG. 20, even if the resin film 201 is sandwiched between the first projection 112 and the inclined plate 116 and the contact pin 3a is pressed against the terminal of the LCD 90, the normal tip S and the downward bending can be obtained. Tip S2
Touches the terminal of the LCD 90, but the tip S1 curved upward may not be able to obtain a sufficient contact pressure even if it makes contact. From this, the contact pin 3a
However, there is a problem that a contact failure with the LCD 90 occurs and an accurate electrical test cannot be performed.

Therefore, in the fourth embodiment, as shown in FIG. 21, the tip S1 curved above the contact pin 3a.
In order to align the downwardly curved distal end S2 with the normal distal end S, a ferroelastic film 400 made of an organic or inorganic material is
a, and the contact probe 200 and the ferroelastic film 400 are attached to the first protrusion 1 of the top clamp 111 in such a state that the top end of the top clamp 111 protrudes shorter than the contact pin 3a.
A contact probe holding body (supporting member) 110 sandwiched between the base 12 and the inclined plate 116 of the bottom clamp 115 is employed. The ferroelastic film 400 is preferably made of ceramics or polyethylene terephthalate if it is an organic material, and preferably made of ceramics, especially an alumina film if it is an inorganic material.

Then, the contact probe holding body 1
10 is fixed to the frame 120, and the contact pins 3
When a is pressed against the terminal of the LCD 90, the ferroelastic film 400 presses the contact pin 3a from above, so that even the tip S1 curved upward, the ferroelastic film 400 reliably contacts the terminal of the LCD 90. Thereby, a uniform contact pressure is obtained at the tip of each contact pin 3a.

That is, since the tip of the contact pin 3a can be reliably brought into contact with the terminal of the LCD 90, measurement errors due to poor contact can be eliminated. Furthermore, the contact pins 3a from the ferroelastic film 400
By changing the protrusion amount of the contact pin 3a,
It is possible to change the timing of pressing the contact pin 3a from above when pressing is performed, and it is possible to obtain a desired contact pressure with a desired pressing amount.

Next, a fifth embodiment will be described with reference to FIGS. As shown in FIG. 22, since the resin film 201 of the contact probe 200 described in the third embodiment is made of, for example, a polyimide resin, it absorbs moisture and elongates, so that the area between the contact pins 3a, 3a is increased. The interval t sometimes changed. This makes it impossible for the contact pins 3a to come into contact with the predetermined positions of the terminals of the LCD 90, and there is a problem that an accurate electrical test cannot be performed.

Therefore, in the fifth embodiment, as shown in FIG.
00 and the contact pin 3 even if the humidity changes
The change in the interval t between the contact pins 3a and 3a is reduced, whereby the contact pins 3a are reliably brought into contact with the predetermined positions of the terminals of the LCD 90.

That is, the displacement of each contact pin 3a is less likely to occur, and the tip is accurately and accurately contacted with the terminal of the LCD 90. Therefore, it is possible to prevent damage or the like caused by contact of the contact pins 3a made of a high-hardness Ni-Mn alloy with places other than the terminals of the LCD 90. In addition, the metal film 500
Any of Ni, Ni alloy, Cu and Cu alloy is preferable.

Next, a sixth embodiment will be described with reference to FIG. That is, the metal film 500 is attached on the resin film 201 as in the fifth embodiment, and the ferroelastic film 400 is used as in the third embodiment. A uniform contact pressure can be obtained irrespective of the curvature of the tip, and a change in the interval t between the contact pins 3a, 3a can be minimized to perform the electrical test accurately.

Next, a seventh embodiment will be described with reference to FIGS. 25 and 26. As shown in FIG. 25, the metal film 5 adhered on the resin film 201
A structure in which a second resin film 202 is further adhered on the second resin film 202 is adopted, and a ferroelastic film 400 is provided on the second resin film 202 as shown in FIG.

Here, unlike the sixth embodiment, the reason why the second resin film 202 is provided is that the terminals of the TABIC 300 disposed above the metal film 500 at the rear end directly contact the metal film 500. This is because the short circuit caused by the above is prevented. In addition, if the metal film 500 is merely attached and provided on the resin film 201, the oxidation of the metal film 500 exposed in the air proceeds, so that the second resin film 202 Is also to prevent its oxidation.

Next, an eighth embodiment will be described with reference to FIGS. 27 and 28. In the fourth, sixth and seventh embodiments, the ferroelastic film 400 is in press contact with the contact pins 3a during use, and the friction between the ferroelastic film 400 and the contact pins 3a is repeated by repeated use, When the distortion due to this is accumulated, the contact pin 3a may bend right and left, and the contact point may shift.

Therefore, in the eighth embodiment, as shown in FIG. 27, the resin film 201 is made to be a wider film 201a than the conventional one, and the projecting length of the contact pins 3a from the metal film 500 is set to X1, and Assuming that the projecting length of the resin film 201a from the metal film 500 is X2, a configuration in which X1> X2 is adopted. Then, as shown in FIG. 28, when the ferroelastic film 400 is used so as to protrude shorter than the wide resin film 201a, the ferroelastic film 400 comes into contact with the soft wide resin film 201a and the contact pins 3a
Is not directly in contact with the contact pin 3a, so that the contact pin 3a can be prevented from bending left and right.

Further, the LCD according to the eighth embodiment described above
Probe device 100, the wide resin film 201a
Is formed longer on the distal end side than the ferroelastic film 400 and acts as a cushioning material when the ferroelastic film 400 presses the contact pin 3a. Is not distorted and curved, and stable contact with the terminal of the LCD 90 can be maintained.

Next, a ninth embodiment will be described with reference to FIGS. 29 and 30. When the second resin film 202 is attached on the metal film 500, and the length of the contact pins 3a protruding from the metal film 500 is X1, and the length of the wide resin film 201a protruding from the metal film 500 is X2, X1> It is configured so as to have a relationship of X2. Then, as shown in FIG. 30, the ferroelastic film 400 provided on the second resin film 202 is arranged so as to overlap and protrude shorter than the wide resin film 201a.

In the LCD probe device 100 according to the ninth embodiment, the respective functions and effects of the third to eighth embodiments, that is, the increase in hardness and toughness of the contact pin 3a, the uniformity of the contact pressure, and the displacement Operational effects such as suppression, stabilization of contact pressure, and prevention of short circuit by a metal film can be obtained.

Note that the contact probes in the third to ninth embodiments may be employed in probe devices for chip carriers and IC probes. In this case, the shape of the contact probe, the wiring, the pitch and arrangement of the contact pins, and the like are set in accordance with each probe device to be incorporated.

Although the Mn concentration of the low manganese alloy layer LM is formed with a gradient, the gradient concentration may not be set as long as the Mn concentration is lower than that of the high manganese alloy layer HM. For example, the Mn concentration of the low manganese alloy layer LM may be constant. However, as described above, by increasing the Mn concentration of the low manganese alloy layer LM, stress concentration at the interface with the high manganese alloy layer HM can be reduced.
There is an advantage that sharp changes in hardness and toughness can be reduced.

[0093]

EXAMPLES In the electroplating step of forming the pattern wiring and contact pins of the contact probe in each of the above embodiments, the plating conditions were determined based on the following test results.

The plating solution for adding Mn to Ni is obtained by adding Mn sulfamate to a Ni sulfamate bath. The amount of Mn contained in the Ni plating film depends on the amount of Mn in the plating solution and the amount of Mn in the plating solution. Therefore, the high manganese alloy layer HM was subjected to a plating process under the following conditions because the current density depends on the current density. Mn amount: 20 to 35 g / l Current density: 1 to 10 A / dm ²

The reason for setting the plating conditions of the high manganese alloy layer HM within the above range is that when the amount of Mn is less than 20 g / l and the current density is less than 1 A / dm ² , the Mn concentration in the film is small and the desired hardness is not obtained. This is because it cannot be obtained, and if it exceeds 35 g / l and 10 A / dm ² , the Mn concentration increases, the stress of the plating film increases, and the film itself becomes very brittle.

The plating treatment may be performed not only with sulfamic acid but also with a nickel sulfate bath as a base. However, in the plating treatment with the nickel sulfamate bath, the stress is reduced as compared with the nickel sulfate bath. effective. Table 1 below shows the experimental results of the Mn concentration and the hardness before and after the heat treatment when the current density was changed when the amount of Mn was constant (30 g / l). FIG. 31 shows the relationship between the Mn concentration and the hardness.

[0097]

[Table 1]

The electrodeposition stress between the contact probe provided with the high manganese alloy layer HM and the low manganese alloy layer LM and the contact probe constituted only by the high manganese alloy layer is calculated as follows.
The data actually measured by the strip electrodeposition stress measuring instrument is
It is shown in Table 2 below and FIG. In the tables and figures, data (* 3 A / d) marked as two-step plating
m ² ) is due to the contact probe of the present invention. The other data was formed using only a single high manganese alloy layer.

That is, in the step of forming the stress relaxation layer of the contact probe according to the present invention, which is described as two-step plating,
The current density is gradually increased from the beginning of electrodeposition, and the low manganese alloy layer L
At the end of the electrodeposition of M, it was set to be 3 A / dm ^2, and as shown in FIG. 32, a low manganese alloy layer LM having a gradient concentration of Mn was formed. Further, in the high hardness layer forming step, a high manganese alloy layer HM having a Mn concentration of 0.4% by weight was formed at a constant current density of 3 A / dm ² following the stress relaxing layer step.

[0100]

[Table 2]

As shown in Table 2 and FIG. 33, 3 A / d
In the case of a contact probe formed of only a single high manganese alloy layer at a constant current density of m ² , the internal stress is 18.8 kg / mm ² , whereas the low manganese alloy layer having a concentration gradient of Mn is And a contact probe with a high manganese alloy layer, the internal stress is 11.9 kg
/ Mm ² . That is, it can be understood that the stress at the time of electrodeposition is reduced to about 60% in the contact probe having the low manganese alloy layer, as compared with the case where the contact probe is formed only of the high manganese alloy layer.

[0102]

According to the present invention, the following effects can be obtained. (1) According to the contact probe of the first aspect, the high manganese alloy layer has a manganese concentration of 0.05% by weight or more.
Since it is an i-Mn alloy, H
A high hardness of v350 or more can be obtained, and the low manganese alloy layer is formed of a Ni-Mn alloy having a lower manganese concentration than the high manganese alloy layer. To increase toughness. Therefore, as a whole contact pin,
It can have excellent heat resistance, high hardness and excellent toughness, and high reliability that can withstand repeated use over a long period of time.

(2) According to the contact probe of the second aspect, the Mn concentration of the high manganese alloy layer is 1.5% by weight.
With the above setting, not only the low manganese alloy layer can maintain toughness only, but also the high manganese alloy layer itself can be given appropriate toughness as a contact probe, and the contact pin as a whole has more excellent toughness be able to.

(3) According to the contact probe of the third aspect, since the Mn concentration of the low manganese alloy layer is set to be gradually higher, a sharp change in hardness and toughness at the interface with the high manganese alloy layer is reduced. can do. Therefore, the warpage of the contact pin caused by the difference in the thermal expansion coefficient between the two layers can be significantly reduced, and the warpage due to a temperature change during measurement can be suppressed to maintain a stable contact pressure and the like.

(4) According to the contact probe of the fourth aspect, even if the film is, for example, a resin film which easily absorbs moisture and stretches, a metal film is directly attached to the film. Because it is provided,
The extension of the film is suppressed by the metal film, the gap between the contact pins is less likely to occur, and the contact pins can be accurately and accurately contacted with the object to be measured. Therefore, a high hardness Ni-M is placed at a place other than the terminal such as an IC chip or an LCD as an object to be measured.
Damage or the like caused by contact of a contact pin formed of an n alloy can be prevented. Further, in the present contact probe, by using the metal film as the ground, the deviation of the characteristic impedance from the substrate wiring side can be minimized to the vicinity of the contact pin tip, and the malfunction due to the reflected noise can be suppressed. .

(5) According to the contact probe of the fifth aspect, since the second film is directly attached to the metal film, the substrate of the wiring substrate disposed above the metal film is provided. Since the side pattern wiring and other wiring do not directly contact the metal film, a short circuit can be prevented. Further, the second film can cover the metal film to prevent its oxidation.

(6) According to the probe device of the sixth aspect, since the ferroelastic film presses the contact pin from above, the Ni pin having high hardness can be used even if the pin tip is curved upward. -A uniform contact pressure is obtained for each pin formed of the Mn alloy. That is, since the contact pin can be reliably brought into contact with the object to be measured, measurement errors due to poor contact can be eliminated.

(7) According to the probe device of the seventh aspect, the film is formed longer on the distal end side than the ferroelastic film, and the ferroelastic film serves as a cushioning material when pressing the contact pin. In addition, the contact pin is not distorted and bent due to friction with the ferroelastic film, and stable contact with the object to be measured can be maintained. Therefore, the contact pressure of the tip portion formed of a high hardness Ni-Mn alloy can be obtained uniformly over a long period of time.

(8) In the method for manufacturing a contact probe according to the eighth aspect, the low manganese alloy layer formed by plating in the stress interlacing forming step is replaced by the high manganese alloy layer formed in the high hardness layer forming step. Since the manganese concentration is lower than that, the stress generated at the initial stage of electrodeposition can be reduced by the low manganese alloy layer. Therefore, the bending of the entire second metal layer, the separation from the first metal layer, the tearing of the first metal layer, and the like, which occur due to the stress being carried over during the film growth process, are suppressed, and the production yield is greatly improved. Can be done.

(9) In the method for manufacturing a contact probe according to the ninth aspect, in the stress relaxation layer forming step, the low manganese alloy layer is formed by plating by gradually increasing the Mn concentration. Mn concentration is gradient in the direction, Mn of the high manganese alloy layer and the low manganese alloy layer
The difference in density is gradually reduced. Therefore, a sharp change in the Mn concentration at the interface between the two layers is alleviated, and stress concentration at the time of plating at the interface can be suppressed.

[Brief description of the drawings]

FIG. 1 is an enlarged schematic view showing a first embodiment of a contact probe according to the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is a fragmentary cross-sectional view showing a method of manufacturing the contact probe according to the first embodiment of the present invention in the order of steps.

FIG. 4 is an exploded perspective view of a probe device (chip carrier) in the first embodiment of the contact probe according to the present invention.

FIG. 5 is an external perspective view of a probe device (chip carrier) in the first embodiment of the contact probe according to the present invention.

FIG. 6 is an enlarged cross-sectional view taken along line BB of a main part of FIG. 5;

FIG. 7 is a perspective view of an essential part showing a second embodiment of the contact probe according to the present invention.

FIG. 8 is a plan view showing a second embodiment of the contact probe according to the present invention.

FIG. 9 is a sectional view taken along the line CC of FIG. 8;

FIG. 10 is an exploded perspective view showing an example of a probe device incorporating a second embodiment of the contact probe according to the present invention.

FIG. 11 is a perspective view of an essential part showing an example of a probe device incorporating a second embodiment of the contact probe according to the present invention.

FIG. 12 is a sectional view taken along line EE of FIG. 11;

FIG. 13 is a perspective view showing a contact probe in a third embodiment of the probe device according to the present invention.

14 is a sectional view taken along line FF of FIG.

FIG. 15 is an exploded perspective view showing a contact probe holding body in a third embodiment of the probe device according to the present invention.

FIG. 16 is a perspective view showing a third embodiment of the probe device according to the present invention.

FIG. 17 is a perspective view showing a contact probe holding body in a third embodiment of the probe device according to the present invention.

FIG. 18 is a sectional view taken along line XX of FIG. 16;

FIG. 19 is a side view showing a conventional defect of a contact probe regarding a fourth embodiment of the probe device according to the present invention.

FIG. 20 is a side view showing a conventional disadvantage of the probe device with respect to the fourth embodiment of the probe device according to the present invention.

FIG. 21 is a side view showing a contact probe incorporated in a contact probe holding body in a fifth embodiment of the probe device according to the present invention.

FIG. 22 is a view in the direction of arrow D in FIG. 13 relating to a fifth embodiment of the contact probe according to the present invention.

FIG. 23 is a side view showing a fifth embodiment of the contact probe according to the present invention.

FIG. 24 is a side view showing a contact probe incorporated in a contact probe holding body in a sixth embodiment of the probe device according to the present invention.

FIG. 25 is a side view showing a contact probe in a seventh embodiment of the probe device according to the present invention.

FIG. 26 is a side view showing a contact probe incorporated in a contact probe holding body in a seventh embodiment of the probe device according to the present invention.

FIG. 27 is a side view showing a contact probe in an eighth embodiment of the probe device according to the present invention.

FIG. 28 is a side view showing a contact probe incorporated in a contact probe holding body in an eighth embodiment of the probe device according to the present invention.

FIG. 29 is a side view showing a contact probe in a ninth embodiment of the probe device according to the present invention.

FIG. 30 is a side view showing a contact probe incorporated in a contact probe holding body in a ninth embodiment of the probe device according to the present invention.

FIG. 31 is a graph showing the relationship between Mn concentration and hardness at the tip of the contact probe according to the present invention.

FIG. 32 is a graph schematically showing the relationship between the thickness of the Ni—Mn alloy layer and the Mn concentration in the method for manufacturing a contact probe according to the present invention.

FIG. 33 is a graph showing the internal stress of each contact pin according to the method of manufacturing the contact probe according to the present invention and the conventional manufacturing method.

[Explanation of symbols]

 1, 16 Contact probe 2 Resin film 3 Pattern wiring 3a Contact pin (tip) 13 Upper plate (supporting member) 90 LCD (measurement target) 100 Probe device 110 Contact probe holder (supporting member) 200 Contact probe 201 Resin film 201a Resin film (wide resin film) 202 Second resin film 300 TABIC (wiring substrate) 301 Terminal 400 Strong elastic film 500 Metal film AU Au layer I IC chip (measurement target) N Ni-Mn alloy layer LM Low manganese Alloy layer HM High manganese alloy layer PI Polyimide resin

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Akishi Mishima 1-297 Kitabukurocho, Omiya City, Saitama Prefecture Inside the Mitsubishi Materials Research Institute (72) Inventor Togen Genshi 1-297 Kitabukurocho, Omiya City, Saitama Prefecture Mitsubishi Materials (72) Inventor Akihiro Masuda 1-297 Kitabukuro-cho, Omiya City, Saitama Prefecture Mitsubishi Materials Corporation

Claims (9)

[Claims] 1. A contact probe in which a plurality of pattern wirings are formed on a film, and each tip of each of the pattern wirings is arranged in a protruding state from the film to be a contact pin, and at least the tip is made of nickel. A high manganese alloy layer formed of a manganese alloy and having a manganese concentration set to 0.05% by weight or more, and a low manganese alloy layer set to a manganese concentration lower than the high manganese alloy layer; A contact probe. 2. The contact probe according to claim 1, wherein the high manganese alloy layer has a manganese concentration of 1.5% by weight.
A contact probe having the following settings. 3. The contact probe according to claim 1, wherein the low manganese alloy layer has a manganese concentration set gradually higher in a thickness direction toward the high manganese alloy layer. probe. 4. The contact probe according to claim 1, wherein a metal film is directly attached to the film. 5. The contact probe according to claim 4, wherein a second film is provided directly on the metal film. 6. The contact probe according to claim 1, a ferroelastic film disposed on the film and protruding from the film shorter than the contact pin, and the ferroelastic film and the contact. A probe device, comprising: a support member that supports the probe. 7. The probe device according to claim 6, wherein the film is formed longer on the distal end side than the ferroelastic film so that the film becomes a buffer when the ferroelastic film presses the contact pin. A probe device. 8. A method for manufacturing a contact probe, wherein a plurality of pattern wirings are formed on a film, and the respective tips of the pattern wirings are arranged so as to protrude from the film to form contact pins. A first metal layer forming step of forming a first metal layer of a material to be adhered to or bonded to the material of the contact pin; and applying a mask on the first metal layer to an unmasked portion, A plating step of forming a second metal layer provided for the contact pins with a nickel-manganese alloy by plating, except for a portion provided for the contact pins on the second metal layer from which the mask has been removed; A film-attaching step of attaching the film, which covers: a portion composed of the film and a second metal layer, and a portion composed of the substrate layer and the first metal layer It and a separating step of separating, the plating treatment step, the manganese concentration of 0.05 wt%
A high-hardness layer forming step of forming a high manganese alloy layer set as described above, and a stress relaxing layer forming step of forming a low manganese alloy layer set to a lower manganese concentration than the high manganese alloy layer; A method of forming a high-hardness layer after the step of forming a relaxation layer, wherein the second metal layer is formed by laminating the low-manganese alloy layer and the high-manganese alloy layer in this order. . 9. The method of manufacturing a contact probe according to claim 8, wherein in the stress relaxation layer forming step, the manganese concentration is gradually increased to form the low manganese alloy layer. .