JPH10200251A - Circuit module manufacturing method - Google Patents

Circuit module manufacturing method

Info

Publication number
JPH10200251A
JPH10200251A JP9002331A JP233197A JPH10200251A JP H10200251 A JPH10200251 A JP H10200251A JP 9002331 A JP9002331 A JP 9002331A JP 233197 A JP233197 A JP 233197A JP H10200251 A JPH10200251 A JP H10200251A
Authority
JP
Japan
Prior art keywords
substrate
laser beam
electronic component
component
bump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP9002331A
Other languages
Japanese (ja)
Inventor
Kazutaka Suzuki
一高 鈴木
Koichiro Tsujiku
浩一郎 都竹
Chikashi Nakazawa
睦士 中澤
Noriyoshi Fujii
知徳 藤井
Mitsuo Ueno
光生 上野
Iwao Fujikawa
巌 藤川
Kazuyuki Shibuya
和行 渋谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP9002331A priority Critical patent/JPH10200251A/en
Publication of JPH10200251A publication Critical patent/JPH10200251A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistors
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3431Leadless components
    • H05K3/3436Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistors
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494Heating processes for reflow soldering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

(57)【要約】 【課題】 レーザ光線等の照射エネルギーを利用した電
子部品と基板との接続を良好に行える回路モジュールの
製造方法を提供する。 【解決手段】 レーザ光線LBの照射によってバンプ2
が溶融した直後に、該バンプ2にエアG1を吹き付けて
その溶融分を強制冷却して固化させているので、従来に
比べて溶融分が固化するまでの時間を大幅に短縮するこ
とができ、バンプ溶融後に電子部品1が自重や外力によ
って動いて位置ズレを生じることを確実に防止して、電
子部品1を高い位置精度で基板1に接続できる。
(57) [Problem] To provide a method of manufacturing a circuit module capable of satisfactorily connecting an electronic component and a substrate using irradiation energy of a laser beam or the like. SOLUTION: A bump 2 is irradiated by irradiation of a laser beam LB.
Immediately after is melted, the air G1 is blown onto the bumps 2 to forcibly cool and solidify the melt, so that the time required for the melt to solidify can be significantly reduced as compared with the related art. It is possible to reliably prevent the electronic component 1 from moving due to its own weight or an external force after the melting of the bumps, thereby causing the electronic component 1 to be connected to the substrate 1 with high positional accuracy.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、レーザ光線または
電磁波の照射エネルギーを利用して電子部品と基板との
接続を行う回路モジュールの製造方法に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a circuit module for connecting an electronic component to a substrate by using irradiation energy of a laser beam or an electromagnetic wave.

【0002】[0002]

【従来の技術】図7はこの種従来の部品接続方法を示す
もので、図中の1はIC,LSI等の電子部品、1aは
電子部品1の下面に設けられた電極、2はバンプ、3は
基板、3aは基板3の上面に設けられた電極(ラン
ド)、LBはレーザ光線である。
2. Description of the Related Art FIG. 7 shows a conventional component connection method of this kind. In the drawing, reference numeral 1 denotes an electronic component such as an IC or LSI, 1a denotes an electrode provided on the lower surface of the electronic component 1, 2 denotes a bump, Reference numeral 3 denotes a substrate, 3a denotes an electrode (land) provided on the upper surface of the substrate 3, and LB denotes a laser beam.

【0003】バンプ2は、各電極1a,3aよりも融点
の低い金属材料、例えばSn−Pb系合金(半田)等か
ら成り、部品電極1aまたは基板電極3aの一方に予め
形成されている。
The bump 2 is made of a metal material having a lower melting point than each of the electrodes 1a and 3a, for example, an Sn-Pb alloy (solder), and is formed in advance on one of the component electrode 1a and the substrate electrode 3a.

【0004】電子部品1と基板3とを電気的に接続する
には、まず、図示省略の部品吸着具を用いて、電子部品
1を部品電極1aと基板電極3aとが一致するように位
置合わせしてから基板3上に載置する。
In order to electrically connect the electronic component 1 and the substrate 3, first, the electronic component 1 is aligned using a component suction tool (not shown) so that the component electrode 1a and the substrate electrode 3a coincide with each other. Then, it is placed on the substrate 3.

【0005】そして、基板3としてレーザ光線透過性の
ものを用いる場合には、上記の部品載置状態で基板3の
下面側から該基板3を通じて基板電極3aまたはバンプ
2に向けてレーザ光線LBを照射する(図中実線矢印参
照)。また、基板3としてレーザ光線非透過性のものを
用いる場合には、上記の部品載置状態で電子部品1の側
方からバンプ2に向けてレーザ光線LBを照射する(図
中破線矢印参照)。
[0005] When the substrate 3 is made of a laser beam transmissive material, the laser beam LB is directed from the lower surface side of the substrate 3 toward the substrate electrode 3a or the bump 2 through the substrate 3 in the above-mentioned component mounted state. Irradiate (see solid arrow in the figure). In the case where a substrate that is impermeable to laser light is used as the substrate 3, a laser beam LB is irradiated from the side of the electronic component 1 toward the bump 2 in the above-described component mounting state (see the broken line arrow in the figure). .

【0006】これにより、レーザ光線LBのエネルギー
によってバンプ2の少なくとも表面部分が加熱溶融さ
れ、該溶融分の固化によって電子部品1の電極1aと基
板3の電極3aとがバンプ2を介して電気的に接続され
る。
Accordingly, at least the surface portion of the bump 2 is heated and melted by the energy of the laser beam LB, and the electrode 1a of the electronic component 1 and the electrode 3a of the substrate 3 are electrically connected via the bump 2 by solidification of the melted portion. Connected to.

【0007】[0007]

【発明が解決しようとする課題】上記従来の部品接続方
法では、レーザ光線LBの照射エネルギーによってバン
プ2を溶融させた後、該溶融分を自然冷却により固化さ
せているため、溶融分が完全に固化するまでの間に電子
部品1が自重や外力によって動くと、該電子部品1が位
置ズレを生じたまま接続されてしまう不具合がある。
In the above-described conventional component connection method, after the bump 2 is melted by the irradiation energy of the laser beam LB, the melt is solidified by natural cooling. If the electronic component 1 moves by its own weight or an external force before it is solidified, there is a problem that the electronic component 1 is connected while being displaced.

【0008】また、レーザ光線LBの照射エネルギーに
よってバンプ2が溶融するときにはその成分に応じたガ
ス、例えば半田バンプを使用するときには溶融時にフラ
ックス蒸気等の汚染ガスが発生するため、該汚染ガスが
電子部品1及び基板3やその周辺機器、例えばレーザ光
線LBの光学系部品に付着してこれらを汚染する不具合
がある。
Further, when the bump 2 is melted by the irradiation energy of the laser beam LB, a gas corresponding to the component, for example, when a solder bump is used, a contaminant gas such as a flux vapor is generated at the time of melting. There is a problem that the components 1 and the substrate 3 and peripheral devices thereof, such as the optical components of the laser beam LB, adhere to and contaminate them.

【0009】さらに、バンプ2へのエネルギー付与が空
気等の酸化性雰囲気下で行われているため、エネルギー
付与時にバンプ2及びその溶融分が酸化し、該酸化膜の
影響でヌレ性が低下して接続不良を生じる不具合があ
る。
Further, since energy is applied to the bumps 2 in an oxidizing atmosphere such as air, the bumps 2 and their melted parts are oxidized when energy is applied, and the wettability is reduced due to the effect of the oxide film. Connection failure.

【0010】さらにまた、レーザ光線LBの照射エネル
ギーによってバンプ2及び各電極1a,3aの温度が常
温域から高温域まで急激に上昇すると、この急激な温度
変化によってバンプ2及び各電極1a,3aが熱的ダメ
ージを強く受けて、半田ボール発生やショート等の問題
を生じて接続信頼性が低下する不具合がある。
Furthermore, when the temperature of the bump 2 and each electrode 1a, 3a rises sharply from a normal temperature range to a high temperature range by the irradiation energy of the laser beam LB, the bump 2 and each electrode 1a, 3a are caused by this rapid temperature change. There is a problem that the connection reliability is reduced due to a problem such as generation of a solder ball or a short circuit due to strong thermal damage.

【0011】本発明は上記事情に鑑みてなされたもの
で、その目的とするところは、レーザ光線等の照射エネ
ルギーを利用した部品接続を良好に行える回路モジュー
ルの製造方法を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method of manufacturing a circuit module capable of satisfactorily connecting components using irradiation energy such as a laser beam.

【0012】[0012]

【課題を解決するための手段】上記目的を達成するた
め、請求項1の発明は、被接続部にレーザ光線または電
磁波を照射して電子部品と基板との接続を行う回路モジ
ュールの製造方法であって、被接続部にレーザ光線また
は電磁波を照射した直後に、少なくとも被接続部を強制
冷却する、ことをその特徴としている。
In order to achieve the above object, an object of the present invention is to provide a method of manufacturing a circuit module for connecting an electronic component and a substrate by irradiating a laser beam or an electromagnetic wave to a connected portion. In addition, immediately after the connection portion is irradiated with the laser beam or the electromagnetic wave, at least the connection portion is forcibly cooled.

【0013】この請求項1の発明によれば、被接続部に
レーザ光線または電磁波を照射した直後に、少なくとも
被接続部を強制冷却することにより、照射エネルギーに
よって溶融した接合材が固化するまでの時間を短縮し
て、電子部品が自重や外力によって動いて位置ズレを生
じることを防止できる。
According to the first aspect of the present invention, immediately after the connected portion is irradiated with the laser beam or the electromagnetic wave, at least the connected portion is forcibly cooled, until the joining material melted by the irradiation energy is solidified. By shortening the time, it is possible to prevent the electronic component from moving due to its own weight or external force and causing a position shift.

【0014】請求項3の発明は、被接続部にレーザ光線
または電磁波を照射して電子部品と基板との接続を行う
回路モジュールの製造方法であって、被接続部にレーザ
光線または電磁波を照射するときまたはその直後に、エ
ネルギー付与によって被接続部で発生した汚染ガスを強
制排気する、ことをその特徴としている。
According to a third aspect of the present invention, there is provided a method of manufacturing a circuit module for connecting an electronic component and a substrate by irradiating a connected portion with a laser beam or an electromagnetic wave, and irradiating the connected portion with a laser beam or an electromagnetic wave. When or shortly thereafter, the contaminated gas generated in the connected portion by the energy application is forcibly exhausted.

【0015】この請求項3の発明によれば、被接続部に
レーザ光線または電磁波を照射するときまたはその直後
に、エネルギー付与によって被接続部で発生した汚染ガ
スを強制排気することにより、該汚染ガスが電子部品及
び基板等に付着してこれらを汚染することを防止でき
る。
According to the third aspect of the present invention, when the connected portion is irradiated with a laser beam or an electromagnetic wave or immediately thereafter, the contaminated gas generated in the connected portion due to the application of energy is forcibly exhausted to thereby reduce the contamination. It is possible to prevent gas from adhering to and contaminating electronic components, substrates, and the like.

【0016】請求項4の発明は、被接続部にレーザ光線
または電磁波を照射して電子部品と基板との接続を行う
回路モジュールの製造方法であって、少なくとも被接続
部を不活性ガス雰囲気中におき、同状態で被接続部にレ
ーザ光線または電磁波を照射する、ことをその特徴とし
ている。
According to a fourth aspect of the present invention, there is provided a method of manufacturing a circuit module for connecting an electronic component and a substrate by irradiating a laser beam or an electromagnetic wave to a connected portion, wherein at least the connected portion is placed in an inert gas atmosphere. And irradiating the connected portion with a laser beam or an electromagnetic wave in the same state.

【0017】この請求項4の発明によれば、少なくとも
被接続部を不活性ガス雰囲気中におき、同状態で被接続
部にレーザ光線または電磁波を照射することにより、エ
ネルギー付与時に被接続部が酸化することを防いで、酸
化膜の影響で接続不良を生じることを防止できる。
According to the fourth aspect of the present invention, at least the connected portion is placed in an inert gas atmosphere, and the connected portion is irradiated with a laser beam or an electromagnetic wave in the same state, so that the connected portion is provided with energy. Oxidation can be prevented, so that occurrence of connection failure due to the influence of the oxide film can be prevented.

【0018】請求項5の発明は、被接続部にレーザ光線
または電磁波を照射して電子部品と基板との接続を行う
回路モジュールの製造方法であって、少なくとも被接続
部を予熱した後、被接続部にレーザ光線または電磁波を
照射する、ことをその特徴としている。
According to a fifth aspect of the present invention, there is provided a method of manufacturing a circuit module for connecting an electronic component and a substrate by irradiating a laser beam or an electromagnetic wave to a portion to be connected. It is characterized in that the connection part is irradiated with a laser beam or an electromagnetic wave.

【0019】この請求項5の発明によれば、少なくとも
被接続部を予熱した後、被接続部にレーザ光線または電
磁波を照射することにより、エネルギー付与時における
被接続部の温度上昇幅を低減して被接続部が受ける熱的
ダメージを軽減できる。
According to the fifth aspect of the present invention, after at least the portion to be connected is preheated, the portion to be connected is irradiated with a laser beam or an electromagnetic wave to reduce the temperature rise of the portion to be connected when energy is applied. Thus, thermal damage to the connected portion can be reduced.

【0020】[0020]

【発明の実施の形態】BEST MODE FOR CARRYING OUT THE INVENTION

[第1実施形態]図1は本発明の第1実施形態に係るも
ので、図中の1はIC,LSI等の電子部品、1aは電
子部品1の下面に設けられた電極、2はバンプ、3は基
板、3aは基板3の上面に設けられた電極、4はキャッ
プ、LBはレーザ光線である。
[First Embodiment] FIG. 1 relates to a first embodiment of the present invention, in which 1 is an electronic component such as an IC or LSI, 1a is an electrode provided on the lower surface of the electronic component 1, and 2 is a bump. Reference numeral 3 denotes a substrate, 3a denotes an electrode provided on the upper surface of the substrate 3, 4 denotes a cap, and LB denotes a laser beam.

【0021】部品電極1aと基板電極3aは金,銀,ア
ルミニウム,銅,ニッケルまたはその合金等から成る。
バンプ2は、各電極1a,3aよりも融点の低い金属材
料、例えばSn−Pb系合金(半田)等から成り、部品
電極1aまたは基板電極3aの一方に予め形成されてい
る。
The component electrode 1a and the substrate electrode 3a are made of gold, silver, aluminum, copper, nickel or an alloy thereof.
The bump 2 is made of a metal material having a lower melting point than each of the electrodes 1a and 3a, for example, an Sn—Pb-based alloy (solder), and is formed in advance on one of the component electrode 1a and the substrate electrode 3a.

【0022】基板3はレーザ光線LBに対し透過性を有
するサファイヤ,ジルコニア,フッ化カルシウム,チッ
化アルミ,アルミナ,石英等のセラミクスやガラス、ま
たはポリミド,アクリル,PET,ガラスエポキシ等の
樹脂から成る。
The substrate 3 is made of a ceramic or glass such as sapphire, zirconia, calcium fluoride, aluminum nitride, alumina, quartz, etc., which has transparency to the laser beam LB, or a resin such as polyimide, acrylic, PET, glass epoxy, or the like. .

【0023】キャップ4は電子部品1を覆うに充分な大
きさを有しており、通気口4aを異なる側面に少なくと
も1個宛備えている。また、キャップ4の下面開口の端
縁には、該端縁を基板3に気密に接触させるためのパッ
キン材4bが端縁に沿って設けられている。
The cap 4 is large enough to cover the electronic component 1 and has at least one vent 4a on a different side. In addition, a packing material 4b is provided along the edge of the cap 4 at the edge of the lower surface opening so that the edge is brought into airtight contact with the substrate 3.

【0024】レーザ光線LBは、YAGレーザやCO2
レーザ 等のレーザ発振器(図示省略)から出射された
赤外領域から紫外領域のもので、基板3の下面側から基
板電極3aまたはバンプ2に向けて照射される。ちなみ
に図示例のものでは、電子部品1の電極数に応じた複数
のレーザ光線LBを同時に照射できるような光学系が組
まれている。このレーザ光線LBの波長,出力及び照射
時間は、基板3のレーザ光線透過率やバンプ2の材質や
大きさ等によって予め設定される。
The laser beam LB is a YAG laser or CO 2
The light is emitted from a laser oscillator (not shown) such as a laser in an infrared region to an ultraviolet region, and is irradiated from the lower surface side of the substrate 3 toward the substrate electrode 3a or the bump 2. Incidentally, in the illustrated example, an optical system capable of simultaneously irradiating a plurality of laser beams LB according to the number of electrodes of the electronic component 1 is assembled. The wavelength, output, and irradiation time of the laser beam LB are set in advance according to the laser beam transmittance of the substrate 3, the material and size of the bump 2, and the like.

【0025】電子部品1と基板3とを電気的に接続する
には、まず、図示省略の部品吸着具を用いて、電子部品
1を部品電極1aと基板電極3aとが一致するように位
置合わせてしてから基板3上に載置する。
In order to electrically connect the electronic component 1 and the substrate 3, first, the electronic component 1 is aligned using a component suction tool (not shown) so that the component electrode 1a and the substrate electrode 3a coincide. And then placed on the substrate 3.

【0026】部品載置後は、部品吸着具を電子部品1か
ら退避し、載置された電子部品1にキャップ4を被せて
そのパッキング材4bを基板3に密着させる。
After the components are mounted, the component suction tool is retracted from the electronic component 1, the cap 4 is put on the mounted electronic component 1, and the packing material 4 b is brought into close contact with the substrate 3.

【0027】そして、基板3の下面側から基板電極3a
またはバンプ2に向けてレーザ光線LBを照射する。こ
れにより、基板3を透過したレーザ光線LBのエネルギ
ーによって、バンプ2の少なくとも表面部分が加熱溶融
される。
Then, a substrate electrode 3a is provided from the lower surface side of the substrate 3.
Alternatively, the laser beam LB is irradiated toward the bump 2. Thereby, at least the surface portion of the bump 2 is heated and melted by the energy of the laser beam LB transmitted through the substrate 3.

【0028】レーザ光線LBの照射によりバンプ2が溶
融した直後は、キャップ4の一方の通気口4aから内部
空間にエアG1を吹き込むか、或いは他方の通気口4a
から内部空間のエアG1を吸引するかの何れかの方法に
よって、一方の通気口4aから内部空間を通じて他方の
通気口4aに抜け出るエアG1の流れを形成する。これ
により、バンプ2にエアG1が吹き付けられ、該バンプ
2の溶融分が強制冷却されて固化し、電子部品1の電極
1aと基板3の電極3aとがバンプ2を介して電気的に
接続される。
Immediately after the bump 2 is melted by the irradiation of the laser beam LB, the air G1 is blown into the internal space from one vent 4a of the cap 4 or the other vent 4a.
The air G1 flowing from one vent 4a through the internal space to the other vent 4a is formed by any method of sucking the air G1 in the internal space from the inside. As a result, the air G1 is blown onto the bumps 2 and the molten portion of the bumps 2 is forcibly cooled and solidified, and the electrodes 1a of the electronic component 1 and the electrodes 3a of the substrate 3 are electrically connected via the bumps 2. You.

【0029】本実施形態によれば、レーザ光線LBの照
射によってバンプ2が溶融した直後に、該バンプ2にエ
アG1を吹き付けてその溶融分を強制冷却して固化させ
ているので、従来に比べて溶融分が固化するまでの時間
を大幅に短縮することができ、バンプ溶融後に電子部品
1が自重や外力によって動いて位置ズレを生じることを
確実に防止して、電子部品1を高い位置精度で基板1に
接続できる。
According to the present embodiment, immediately after the bump 2 is melted by the irradiation of the laser beam LB, the air G1 is blown to the bump 2 to forcibly cool and solidify the melted portion. The time required for the molten component to solidify can be significantly reduced, and after the bump is melted, the electronic component 1 can be reliably prevented from moving due to its own weight or an external force, thereby causing the electronic component 1 to have high positional accuracy. Can be connected to the substrate 1.

【0030】また、バンプ溶融時にフラックス蒸気等の
汚染ガスが発生しても、エアG1の流れによって該汚染
ガスを強制排気できるので、汚染ガスが電子部品1及び
基板3やその周辺機器、例えばレーザ光線LBの光学系
部品に付着してこれらを汚染することを確実に防止し
て、製品品質を格段向上できる。
Further, even if a contaminant gas such as a flux vapor is generated during the melting of the bumps, the contaminant gas can be forcibly exhausted by the flow of the air G1. It is possible to surely prevent the light beam LB from adhering to and contaminating the optical system components, thereby significantly improving the product quality.

【0031】尚、上記実施形態では、バンプ2自体を接
合材として用いたものを例示したが、バンプ表面にバン
プよりも融点の低い接合材層、例えば半田層を設けて、
該接合材層のみを加熱溶融して同様の部品接続を行うよ
うにしてもよく、或いは、バンプを排除しその代わりに
部品電極と基板電極の何れか一方に半田等の接合材を設
け、該接合材を用いて部品電極と基板電極とを接続する
ようにしてもよい。
In the above embodiment, the bump 2 itself is used as a bonding material. However, a bonding material layer having a lower melting point than the bump, for example, a solder layer is provided on the bump surface.
The same component connection may be performed by heating and melting only the bonding material layer, or a bonding material such as solder is provided on one of the component electrode and the substrate electrode instead of removing the bumps. You may make it connect a component electrode and a board | substrate electrode using a joining material.

【0032】また、レーザ光線照射直後に強制冷却と強
制排気を行うようにしたものを例示したが、レーザ光線
を照射するときに上記同様のエア流れ、またはこれより
も弱いエア流れを形成しておけば、バンプ2が必要以上
に溶融することを抑制できると共に、汚染ガスをその発
生と同時に迅速に排気できる。
In the above-described embodiment, the forced cooling and the forced exhaust are performed immediately after the laser beam irradiation. However, when the laser beam is irradiated, the same air flow as described above or a weaker air flow is formed. By doing so, it is possible to suppress the bump 2 from being melted more than necessary, and it is possible to quickly exhaust the contaminant gas simultaneously with its generation.

【0033】さらに、強制冷却と強制排気を行うために
エアG1を用いたものを例示したが、エア以外のガスを
用いても同様の作用,効果が得られることは勿論であ
り、常温よりも温度の低いガスを送り込むようにすれ
ば、冷却効果をさらに向上させることができる。また、
強制的に冷却と排気を行う場合の通気口4aの位置は図
示例のものに限らず任意に変更できる。
Further, an example in which the air G1 is used to perform the forced cooling and the forced exhaust is exemplified. However, the same operation and effect can be obtained by using a gas other than the air. If a gas having a low temperature is fed, the cooling effect can be further improved. Also,
The position of the ventilation port 4a in the case of forcibly cooling and exhausting is not limited to the illustrated example, but can be arbitrarily changed.

【0034】[第2実施形態]図2は本発明の第2実施
形態に係るもので、本実施形態が第1実施形態と異なる
ところは、キャップ4の内側に電子部品1の上面を押さ
え付けるための部品支持部4cを設けた点にある。この
部品支持部4cは基板3の上面と平行な平坦面を下端に
有しており、電子部品1にキャップ4を被せた状態で該
電子部品1の主に上面中央を押さえ付けることができる
と共に、基板3上に載置された電子部品1の傾きをその
下端平坦面で矯正することができる。他の構成及び接続
方法は第1実施形態と同じであるため同一符号を用いそ
の説明を省略する。
[Second Embodiment] FIG. 2 relates to a second embodiment of the present invention. This embodiment is different from the first embodiment in that the upper surface of the electronic component 1 is pressed inside the cap 4. In that a component supporting portion 4c is provided. The component support portion 4c has a flat surface parallel to the upper surface of the substrate 3 at its lower end, and can mainly press the center of the upper surface of the electronic component 1 with the electronic component 1 covered with the cap 4. In addition, the inclination of the electronic component 1 placed on the substrate 3 can be corrected by the flat lower end surface. The other configuration and connection method are the same as those of the first embodiment, and therefore the same reference numerals are used and the description is omitted.

【0035】本実施形態によれば、基板3上に載置され
た電子部品1を、キャップ4の部品支持部4cによって
押さえ付けた状態で、レーザ光線照射による部品接続を
行えるので、レーザ光線照射前に電子部品1に位置ズレ
を生じることを防止できると共に、該電子部品1を安定
した姿勢のままで基板3に接続できる。他の作用,効果
は第1実施形態と同様である。
According to the present embodiment, while the electronic component 1 placed on the substrate 3 is held down by the component supporting portion 4c of the cap 4, the components can be connected by laser beam irradiation. The electronic component 1 can be prevented from being displaced before, and the electronic component 1 can be connected to the substrate 3 in a stable posture. Other operations and effects are the same as those of the first embodiment.

【0036】尚、本実施形態では、電子部品1の主に上
面中央を部品支持部4cによって押さえ付けるものを例
示したが、部品支持部の数を増加したり、または、部品
支持部の少なくとも下部を拡大して該部品支持部の下面
で部品上面全体を押さえ付けるようにしてもよい。
In the present embodiment, an example in which the center of the upper surface of the electronic component 1 is mainly pressed by the component supporting portion 4c has been exemplified. However, the number of component supporting portions may be increased, or at least the lower portion of the component supporting portion. May be enlarged so that the lower surface of the component supporting portion presses the entire upper surface of the component.

【0037】また、部品支持部4cをキャップ4と一体
に形成したものを例示したが、部品支持部4cを別体で
構成してこれをバネ材を介してキャップ4に取り付ける
ようにすれば、部品高さに拘わらずバネ圧を利用して電
子部品1を押さえ付けることができる。勿論、部品支持
部自体を弾性変形可能な材料から形成すれば、バネ材を
用いずとも同様の作用が得られる。
Although the component supporting portion 4c is formed integrally with the cap 4 as an example, the component supporting portion 4c may be formed as a separate body and attached to the cap 4 via a spring material. The electronic component 1 can be pressed using spring pressure regardless of the component height. Of course, if the component support portion itself is formed of a material that can be elastically deformed, the same operation can be obtained without using a spring material.

【0038】[第3実施形態]図3は本発明の第3実施
形態に係るもので、本実施形態が第1実施形態と異なる
ところは、キャップ4の上面中央に部品支持具5用の挿
入口4dを設け、通気口4aそれぞれの高さ位置を一致
させた点にある。部品支持具5は基板3の上面と平行な
平坦面を下端に有しており、挿入口4dを通じて載置部
品1の主に上面中央を押さえ付けることができる。他の
構成は第1実施形態と同じであるため同一符号を用いそ
の説明を省略する。
[Third Embodiment] FIG. 3 relates to a third embodiment of the present invention. This embodiment is different from the first embodiment in that an insert for a component support 5 is inserted in the center of the upper surface of the cap 4. The point is that the opening 4d is provided, and the height position of each of the ventilation holes 4a is matched. The component support 5 has a flat surface parallel to the upper surface of the substrate 3 at the lower end, and can mainly press the center of the upper surface of the mounted component 1 through the insertion opening 4d. The other configuration is the same as that of the first embodiment, so the same reference numerals are used and the description is omitted.

【0039】電子部品1と基板3とを電気的に接続する
には、まず、図示省略の部品吸着具を用いて、電子部品
1を部品電極1aと基板電極3aとが一致するように位
置合わせてしてから基板3上に載置する。
In order to electrically connect the electronic component 1 and the substrate 3, first, the electronic component 1 is aligned using a component suction tool (not shown) so that the component electrode 1 a and the substrate electrode 3 a coincide. And then placed on the substrate 3.

【0040】部品載置後は、図3(a)に示すように、
部品吸着具を電子部品1から退避し、載置された電子部
品1にキャップ4を被せてそのパッキング材4bを基板
3に密着させると共に、キャップ4の挿入口4dに部品
支持具5を挿入し、基板3上に載置された電子部品1を
該部品支持具5によって押さえ付ける。
After the parts are placed, as shown in FIG.
The component suction device is retracted from the electronic component 1, the cap 4 is put on the mounted electronic component 1, the packing material 4 b is brought into close contact with the substrate 3, and the component support 5 is inserted into the insertion opening 4 d of the cap 4. Then, the electronic component 1 placed on the substrate 3 is pressed by the component support 5.

【0041】そして、基板3の下面側から基板電極3a
またはバンプ2に向けてレーザ光線LBを照射する。こ
れにより、基板3を透過したレーザ光線LBのエネルギ
ーによって、バンプ2の少なくとも表面部分が加熱溶融
される。
Then, from the lower surface side of the substrate 3, the substrate electrode 3a
Alternatively, the laser beam LB is irradiated toward the bump 2. Thereby, at least the surface portion of the bump 2 is heated and melted by the energy of the laser beam LB transmitted through the substrate 3.

【0042】レーザ光線LBの照射によりバンプ2が溶
融した直後は、図3(b)に示すように、部品支持具5
をキャップ4の挿入口4dから抜き出し、該挿入口4d
から内部空間にエアG1を吹き込むか、或いは各通気口
4aから内部空間のエアG1を吸引するかの何れかの方
法によって、挿入口4dから内部空間を通じて各通気口
4aに抜け出るエアG1の流れを形成する。これによ
り、バンプ2にエアG1が吹き付けられ、該バンプ2の
溶融分が強制冷却されて固化し、電子部品1の電極1a
と基板3の電極3aとがバンプ2を介して電気的に接続
される。
Immediately after the bump 2 is melted by the irradiation of the laser beam LB, as shown in FIG.
From the insertion opening 4d of the cap 4, and the insertion opening 4d
The air G1 flowing from the insertion port 4d through the internal space to each of the ventilation holes 4a can be controlled by either blowing the air G1 into the internal space from the inside or by suctioning the air G1 in the internal space from each of the ventilation holes 4a. Form. As a result, the air G1 is blown to the bumps 2 and the molten portion of the bumps 2 is forcibly cooled and solidified, and the electrodes 1a of the electronic component 1 are solidified.
And the electrode 3 a of the substrate 3 are electrically connected via the bump 2.

【0043】本実施形態によれば、基板3上に載置され
た電子部品1を、キャップ4の挿入口4dに挿入された
部品支持具5によって押さえ付けた状態で、レーザ光線
照射による部品接続を行っているので、レーザ光線照射
前に電子部品1に位置ズレを生じることを防止できると
共に、該電子部品1を安定した姿勢のままで基板3に接
続できる。他の作用,効果は第1実施形態と同様であ
る。
According to the present embodiment, in a state where the electronic component 1 placed on the substrate 3 is pressed by the component support 5 inserted into the insertion opening 4 d of the cap 4, component connection by laser beam irradiation is performed. Therefore, it is possible to prevent the electronic component 1 from being displaced before the irradiation of the laser beam, and to connect the electronic component 1 to the substrate 3 in a stable posture. Other operations and effects are the same as those of the first embodiment.

【0044】尚、上記実施形態では、挿入口4dから内
部空間を通じて各通気口4aに抜け出るエアG1の流れ
を形成したものを例示したが、部品支持具抜き出し後
に、各通気口4aから内部空間にエアG1を吹き込む
か、或いは挿入口4dから内部空間のエアG1を吸引す
るかの何れかの方法によって、上記とは逆方向のエア流
れを形成するようにしてもよい。
In the above embodiment, the flow of the air G1 that escapes from the insertion port 4d to the ventilation holes 4a through the internal space is illustrated. However, after the component support is extracted, the air G1 flows from the ventilation holes 4a to the internal space. The air flow in the opposite direction may be formed by blowing air G1 or sucking air G1 in the internal space from the insertion port 4d.

【0045】また、キャップ4の挿入口4dと部品支持
具5との間にエア通路と成る隙間を形成しておけば、部
品支持具5を抜き出すことなく、つまり、部品支持具5
によって電子部品1を押さえ付けた状態のままで上記同
様のエア流れを形成することができる。
If a gap is formed between the insertion opening 4d of the cap 4 and the component support 5 as an air passage, the component support 5 is not pulled out.
Thus, an air flow similar to the above can be formed while the electronic component 1 is held down.

【0046】[第4実施形態]図4は本発明の第4実施
形態に係るもので、本実施形態が第1実施形態と異なる
ところは、Ar,N2 等の不活性ガスG2を用い、不活
性ガス雰囲気中で部品接続を行うようにした点にある。
他の構成は第1実施形態と同じであるため同一符号を用
いその説明を省略する。
[0046] [Fourth Embodiment] FIG. 4 is intended according to the fourth embodiment of the present invention, when the present embodiment is different from the first embodiment, using Ar, the inert gas G2 such as N 2, The point is that the components are connected in an inert gas atmosphere.
The other configuration is the same as that of the first embodiment, so the same reference numerals are used and the description is omitted.

【0047】電子部品1と基板とを電気的に接続するに
は、まず、図示省略の部品吸着具を用いて、電子部品1
を部品電極1aと基板電極3aとが一致するように位置
合わせてしてから基板3上に載置する。
In order to electrically connect the electronic component 1 and the substrate, first, the electronic component 1 is connected to the electronic component 1 using a component suction tool (not shown).
Is positioned so that the component electrode 1a and the substrate electrode 3a coincide with each other, and then placed on the substrate 3.

【0048】部品載置後は、図4(a)に示すように、
部品吸着具を電子部品1から退避し、載置された電子部
品1にキャップ4を被せてそのパッキング材4bを基板
3に密着させると共に、図示省略のガス供給チューブを
介してキャップ4の一方の通気口4aから内部空間に不
活性ガスG1を吹き込んで充満させる。
After the parts are placed, as shown in FIG.
The component sucker is retracted from the electronic component 1, the mounted electronic component 1 is covered with the cap 4, the packing material 4b is brought into close contact with the substrate 3, and one of the caps 4 is connected via a gas supply tube (not shown). The inert gas G1 is blown into the internal space from the ventilation port 4a to fill it.

【0049】そして、図4(b)に示すように、基板3
の下面側から基板電極3aまたはバンプ2に向けてレー
ザ光線LBを照射する。これにより、基板3を透過した
レーザ光線LBのエネルギーによって、バンプ2の少な
くとも表面部分が、不活性ガス雰囲気中で加熱溶融され
る。
Then, as shown in FIG.
Is irradiated with the laser beam LB toward the substrate electrode 3a or the bump 2 from the lower surface side of the substrate. Thus, at least the surface portion of the bump 2 is heated and melted in an inert gas atmosphere by the energy of the laser beam LB transmitted through the substrate 3.

【0050】レーザ光線LBの照射によりバンプ2が溶
融した後は、該バンプ2の溶融分が自然冷却されて固化
し、電子部品1の電極1aと基板3の電極3aとがバン
プ2を介して電気的に接続される。
After the bump 2 is melted by the irradiation of the laser beam LB, the melted portion of the bump 2 is naturally cooled and solidified, and the electrode 1a of the electronic component 1 and the electrode 3a of the substrate 3 are interposed via the bump 2. Electrically connected.

【0051】本実施形態によれば、バンプ2を不活性ガ
ス雰囲気中で加熱溶融できるので、エネルギー付与時に
バンプ2及びその溶融分が酸化することを防ぎ、酸化膜
の影響でヌレ性が低下して接続不良を生じることを確実
に防止して、接続信頼性を格段向上できる。
According to the present embodiment, since the bump 2 can be heated and melted in an inert gas atmosphere, the bump 2 and its melted portion are prevented from being oxidized when energy is applied, and the wettability is reduced due to the effect of the oxide film. As a result, it is possible to reliably prevent the occurrence of a connection failure, thereby significantly improving the connection reliability.

【0052】尚、上記実施形態では、バンプ2の溶融分
を自然冷却させるものを例示したが、バンプ溶融直後
に、キャップ4の一方の通気口4aから内部空間に不活
性ガスG2を吹き込めば、該不活性ガスG2をバンプ2
に吹き付けて溶融分を強制冷却して固化させることがで
きると共に、バンプ溶融時に発生したフラックス蒸気等
の汚染ガスを不活性ガスG2の流れによって強制排気す
ることができる。勿論、上記の強制冷却と強制排気に
は、不活性ガスG2の代わりにエアG1を用いてもよ
い。
In the above-described embodiment, an example in which the molten portion of the bump 2 is naturally cooled is exemplified. However, if the inert gas G2 is blown into the internal space from one of the vents 4a of the cap 4 immediately after the melting of the bump, The inert gas G2 is applied to the bump 2
, The molten content can be forcibly cooled and solidified, and the contaminant gas such as flux vapor generated at the time of melting the bump can be forcibly exhausted by the flow of the inert gas G2. Of course, air G1 may be used in place of the inert gas G2 for the above-mentioned forced cooling and forced exhaust.

【0053】また、キャップ4の大きさを極力小さくし
て電子部品1との隙間を狭めておけば、不活性ガスG2
の使用量及びコストを低減することができる。
Also, if the size of the cap 4 is made as small as possible to narrow the gap with the electronic component 1, the inert gas G2
And the cost can be reduced.

【0054】[第5実施形態]図5は本発明の第5実施
形態に係るもので、本実施形態が第1実施形態と異なる
ところは、キャップ4内に部品予熱用の電熱ヒータ6を
設けた点にある。他の構成は第1実施形態と同じである
ため同一符号を用いその説明を省略する。
[Fifth Embodiment] FIG. 5 relates to a fifth embodiment of the present invention. This embodiment is different from the first embodiment in that an electric heater 6 for preheating parts is provided in a cap 4. It is in the point. The other configuration is the same as that of the first embodiment, so the same reference numerals are used and the description is omitted.

【0055】電子部品1と基板3とを電気的に接続する
には、まず、図示省略の部品吸着具を用いて、電子部品
1を部品電極1aと基板電極3aとが一致するように位
置合わせてしてから基板3上に載置する。
In order to electrically connect the electronic component 1 and the substrate 3, first, the electronic component 1 is aligned using a component suction tool (not shown) so that the component electrode 1 a and the substrate electrode 3 a coincide. And then placed on the substrate 3.

【0056】部品載置後は、図5(a)に示すように、
部品吸着具を電子部品1から退避し、載置された電子部
品1にキャップ4を被せてそのパッキング材4bを基板
3に密着させると共に、ヒータ熱を利用して電子部品1
及びバンプ2を加熱し、主にバンプ2を常温よりも高い
温度に予熱する。
After the parts are placed, as shown in FIG.
The component suction tool is retracted from the electronic component 1, the mounted electronic component 1 is covered with a cap 4, the packing material 4b is brought into close contact with the substrate 3, and the electronic component 1 is heated using heater heat.
Then, the bump 2 is heated, and the bump 2 is mainly preheated to a temperature higher than the normal temperature.

【0057】そして、図5(b)に示すように、基板3
の下面側から基板電極3aまたはバンプ2に向けてレー
ザ光線LBを照射する。これにより、基板3を透過した
レーザ光線LBのエネルギーによって、バンプ2の少な
くとも表面部分が加熱溶融される。
Then, as shown in FIG.
Is irradiated with the laser beam LB toward the substrate electrode 3a or the bump 2 from the lower surface side of the substrate. Thereby, at least the surface portion of the bump 2 is heated and melted by the energy of the laser beam LB transmitted through the substrate 3.

【0058】レーザ光線LBの照射によりバンプ2が溶
融した直後は、電熱ヒータ5による加熱を停止し、キャ
ップ4の一方の通気口4aから内部空間にエアG1を吹
き込むか、或いは他方の通気口4aから内部空間のエア
G1を吸引するかの何れかの方法によって、一方の通気
口4aから内部空間を通じて他方の通気口4aに抜け出
るエアG1の流れを形成する。これにより、バンプ2に
エアG1が吹き付けられ、該バンプ2の溶融分が強制冷
却されて固化し、電子部品1の電極1aと基板3の電極
3aとがバンプ2を介して電気的に接続される。
Immediately after the bump 2 is melted by the irradiation of the laser beam LB, the heating by the electric heater 5 is stopped, and the air G1 is blown into the internal space from one vent 4a of the cap 4 or the other vent 4a. The air G1 flowing from one vent 4a through the internal space to the other vent 4a is formed by any method of sucking the air G1 in the internal space from the inside. As a result, the air G1 is blown onto the bumps 2 and the molten portion of the bumps 2 is forcibly cooled and solidified, and the electrodes 1a of the electronic component 1 and the electrodes 3a of the substrate 3 are electrically connected via the bumps 2. You.

【0059】本実施形態によれば、ヒータ熱によってバ
ンプ2を予熱してから該バンプ2にレーザ光線LBのエ
ネルギーを付与しているので、該エネルギー付与時にお
けるバンプ2及び各電極1a,2aの温度上昇幅を低減
してこれらが受ける熱的ダメージを大幅に軽減し、半田
ボール発生やショート等の問題を排除して、接続信頼性
を格段向上できる。他の作用,効果は第1実施形態と同
様である。
According to the present embodiment, since the energy of the laser beam LB is applied to the bump 2 after the bump 2 is preheated by the heater heat, the bump 2 and the electrodes 1a, 2a at the time of the energy application are applied. By reducing the temperature rise, the thermal damage to these components can be greatly reduced, and problems such as the occurrence of solder balls and short circuits can be eliminated, thereby significantly improving the connection reliability. Other operations and effects are the same as those of the first embodiment.

【0060】尚、本実施形態では、ヒータ熱を利用して
電子部品1の主にバンプ2を予熱したものを例示した
が、電子部品1にキャップ4を被せた後に常温よりも温
度の高いエアG1や不活性ガスG2をキャップ4の一方
の通気口4aから内部空間に吹き込むようにすれば、こ
れらエアG1や不活性ガスG2によって電子部品1の主
にバンプ2をレーザ光線照射前に同様に予熱することが
できる。
In the present embodiment, an example in which the bumps 2 of the electronic component 1 are mainly preheated by using the heater heat has been exemplified. However, after the electronic component 1 is covered with the cap 4, air having a temperature higher than the normal temperature is set. When the gas G1 and the inert gas G2 are blown into the internal space from one of the vents 4a of the cap 4, the bumps 2 mainly of the electronic component 1 are similarly irradiated with the air G1 and the inert gas G2 before the laser beam irradiation. Can be preheated.

【0061】[第6実施形態]図6は本発明の第6実施
形態に係るもので、本実施形態が第1実施形態と異なる
ところは、レーザ光線LBに対し透過性を有するセラミ
クス,ガラス,樹脂等からキャップ4を形成した点と、
該キャップ4を透過したレーザ光線LBをバンプ2に照
射した点にある。他の構成は第1実施形態のものと同じ
であるため同一符号を用いここでの説明を省略する。
[Sixth Embodiment] FIG. 6 relates to a sixth embodiment of the present invention. This embodiment is different from the first embodiment in that ceramics, glass, and the like having transparency to a laser beam LB are used. The point that the cap 4 is formed from resin or the like;
The point is that the laser beam LB transmitted through the cap 4 is applied to the bump 2. The other configuration is the same as that of the first embodiment, so the same reference numerals are used and the description is omitted here.

【0062】電子部品1と基板3とを電気的に接続する
には、まず、図示省略の部品吸着具を用いて、電子部品
1を部品電極1aと基板電極3aとが一致するように位
置合わせてしてから基板3上に載置する。
In order to electrically connect the electronic component 1 and the substrate 3, first, the electronic component 1 is aligned using a component suction tool (not shown) so that the component electrode 1 a and the substrate electrode 3 a coincide. And then placed on the substrate 3.

【0063】部品載置後は、部品吸着具を電子部品1か
ら退避し、載置された電子部品1にキャップ4を被せて
そのパッキング材4bを基板3に密着させる。
After the components are placed, the component suction tool is retracted from the electronic component 1, the cap 4 is put on the placed electronic component 1, and the packing material 4 b is brought into close contact with the substrate 3.

【0064】そして、キャップ4の外側からバンプ2に
向けてレーザ光線LBを照射する。これにより、キャッ
プ4を透過したレーザ光線LBのエネルギーによって、
バンプ2の少なくとも表面部分が加熱溶融される。
Then, a laser beam LB is irradiated from outside the cap 4 toward the bump 2. Thereby, the energy of the laser beam LB transmitted through the cap 4 causes
At least the surface portion of the bump 2 is heated and melted.

【0065】レーザ光線LBの照射によりバンプ2が溶
融した直後は、キャップ4の一方の通気口4aから内部
空間にエアG1を吹き込むか、或いは他方の通気口4a
から内部空間のエアG1を吸引するかの何れかの方法に
よって、一方の通気口4aから内部空間を通じて他方の
通気口4aに抜け出るエアG1の流れを形成する。これ
により、バンプ2にエアG1が吹き付けられ、該バンプ
2の溶融分が強制冷却されて固化し、電子部品1の電極
1aと基板3の電極3aとがバンプ2を介して電気的に
接続される。
Immediately after the bump 2 is melted by the irradiation of the laser beam LB, the air G1 is blown into the internal space from one vent 4a of the cap 4 or the other vent 4a.
The air G1 flowing from one vent 4a through the internal space to the other vent 4a is formed by any method of sucking the air G1 in the internal space from the inside. As a result, the air G1 is blown onto the bumps 2 and the molten portion of the bumps 2 is forcibly cooled and solidified, and the electrodes 1a of the electronic component 1 and the electrodes 3a of the substrate 3 are electrically connected via the bumps 2. You.

【0066】本実施形態によれば、レーザ光線LBに対
して透過性を有するキャップ4を用い、該キャップ4の
外側からバンプ2に向けてレーザ光線LBを照射するよ
うにしているので、基板3がレーザ光線LBに対して透
過性を有しない場合でも、レーザ光線照射による部品接
続を同様に実施できる。他の作用,効果は第1実施形態
と同様である。
According to the present embodiment, the cap 4 having transparency to the laser beam LB is used, and the laser beam LB is irradiated from the outside of the cap 4 toward the bump 2. Can be similarly connected by laser beam irradiation even when does not have transparency to the laser beam LB. Other operations and effects are the same as those of the first embodiment.

【0067】以上、上述の各実施形態では、1つの電子
部品に1つのキャップを被せるものを例示したが、複数
の電子部品、或いは基板に載置された全ての電子部品に
1つのキャップを被せるようにしても同様の部品接続を
行うことができる。
As described above, in each of the above embodiments, one electronic component is covered with one cap. However, a plurality of electronic components or all the electronic components mounted on the substrate are covered with one cap. Even in this case, similar component connection can be performed.

【0068】また、電子部品としてIC,LSI等を例
示したが、各実施形態で説明した接続方法は、チップコ
ンデンサ,チップインダクタ,チップ抵抗器等のチップ
状電子部品やこれ以外の電子部品にも幅広く適用でき、
同様の作用,効果を得ることができる。
Further, ICs, LSIs and the like have been exemplified as electronic components. However, the connection method described in each embodiment is applicable to chip-like electronic components such as chip capacitors, chip inductors, chip resistors and other electronic components. Widely applicable,
Similar functions and effects can be obtained.

【0069】さらに、レーザ光線の代わりに電磁波、例
えば赤外線等の熱放射線やマイクロ波等の電波を、部品
電極やバンプ等の被接続部に照射するようにしても該照
射エネルギーによって部品接続を同様に行うことができ
る。
Further, even if an electromagnetic wave, for example, a thermal radiation such as an infrared ray or a radio wave such as a microwave is applied to a connected portion such as a component electrode or a bump instead of the laser beam, the connection of the component is similarly performed by the irradiation energy. Can be done.

【0070】[0070]

【発明の効果】以上詳述したように、請求項1の発明に
よれば、照射エネルギーによって溶融した接合材が固化
するまでの時間を短縮して、電子部品が自重や外力によ
って動いて位置ズレを生じることを防止することがで
き、これにより、電子部品を高い位置精度で基板に接続
して、レーザ光線等の照射エネルギーを利用した電子部
品と基板との接続を良好に行える。
As described above in detail, according to the first aspect of the present invention, the time required for the joining material melted by the irradiation energy to be solidified is shortened, and the electronic component moves due to its own weight or an external force. Can be prevented, whereby the electronic component can be connected to the substrate with high positional accuracy, and the electronic component can be satisfactorily connected to the substrate using the irradiation energy of a laser beam or the like.

【0071】請求項3の発明によれば、エネルギー付与
によって被接続部で発生した汚染ガスが電子部品及び基
板等に付着してこれらを汚染することを防止することが
でき、これにより、製品品質を格段向上して、レーザ光
線等の照射エネルギーを利用した電子部品と基板との接
続を良好に行える。
According to the third aspect of the present invention, it is possible to prevent the contaminant gas generated in the connected portion due to the application of energy from adhering to and contaminating the electronic components, the substrate, and the like. Is significantly improved, and the connection between the electronic component and the substrate using the irradiation energy of a laser beam or the like can be favorably performed.

【0072】請求項4の発明によれば、照射エネルギー
によって被接続部が酸化することを防いで、酸化膜の影
響で接続不良を生じることを防止することができ、これ
により、接続信頼性を格段向上して、レーザ光線等の照
射エネルギーを利用した電子部品と基板との接続を良好
に行える。
According to the fourth aspect of the present invention, it is possible to prevent the connected portion from being oxidized by the irradiation energy and to prevent the occurrence of a connection failure due to the influence of the oxide film, thereby improving the connection reliability. The connection between the electronic component and the substrate using the irradiation energy of a laser beam or the like can be improved satisfactorily.

【0073】請求項5の発明によれば、照射エネルギー
による被接続部の温度上昇幅を低減して被接続部が受け
る熱的ダメージを軽減することができ、これにより、接
続信頼性を格段向上して、レーザ光線等の照射エネルギ
ーを利用した電子部品と基板との接続を良好に行える。
According to the fifth aspect of the present invention, it is possible to reduce the temperature rise of the connected portion due to the irradiation energy and reduce the thermal damage to the connected portion, thereby greatly improving the connection reliability. Thus, the connection between the electronic component and the substrate using the irradiation energy of a laser beam or the like can be performed well.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1実施形態に係る部品接続方法の説
明図
FIG. 1 is an explanatory diagram of a component connection method according to a first embodiment of the present invention.

【図2】本発明の第2実施形態に係る部品接続方法の説
明図
FIG. 2 is an explanatory diagram of a component connection method according to a second embodiment of the present invention.

【図3】本発明の第3実施形態に係る部品接続方法の説
明図
FIG. 3 is an explanatory diagram of a component connection method according to a third embodiment of the present invention.

【図4】本発明の第4実施形態に係る部品接続方法の説
明図
FIG. 4 is an explanatory diagram of a component connection method according to a fourth embodiment of the present invention.

【図5】本発明の第5実施形態に係る部品接続方法の説
明図
FIG. 5 is an explanatory diagram of a component connection method according to a fifth embodiment of the present invention.

【図6】本発明の第6実施形態に係る部品接続方法の説
明図
FIG. 6 is an explanatory diagram of a component connection method according to a sixth embodiment of the present invention.

【図7】従来の部品接続方法の説明図FIG. 7 is an explanatory view of a conventional component connection method.

【符号の説明】[Explanation of symbols]

1…電子部品、1a…部品電極、2…バンプ、3…基
板、3a…基板電極、4…キャップ、LB…レーザ光
線、G1…エア、G2…不活性ガス。
DESCRIPTION OF SYMBOLS 1 ... Electronic component, 1a ... Component electrode, 2 ... Bump, 3 ... Substrate, 3a ... Substrate electrode, 4 ... Cap, LB ... Laser beam, G1 ... Air, G2 ... Inert gas.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 藤井 知徳 東京都台東区上野6丁目16番20号 太陽誘 電株式会社内 (72)発明者 上野 光生 東京都台東区上野6丁目16番20号 太陽誘 電株式会社内 (72)発明者 藤川 巌 東京都台東区上野6丁目16番20号 太陽誘 電株式会社内 (72)発明者 渋谷 和行 東京都台東区上野6丁目16番20号 太陽誘 電株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Tomonori Fujii 6-16-20 Ueno, Taito-ku, Tokyo Taiyo Electric Power Co., Inc. (72) Mitsuo Ueno 6-16-20 Ueno, Taito-ku, Tokyo Taiyo (72) Inventor Iwao Fujikawa 6-16-20 Ueno, Taito-ku, Tokyo Taiyo Induction Co., Ltd. (72) Inventor Kazuyuki Shibuya 6-16-20 Ueno, Taito-ku, Tokyo Taiyo Induction Den Co., Ltd.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 被接続部にレーザ光線または電磁波を照
射して電子部品と基板との接続を行う回路モジュールの
製造方法であって、 被接続部にレーザ光線または電磁波を照射した直後に、
少なくとも被接続部を強制冷却する、 ことを特徴とする回路モジュールの製造方法。
1. A method of manufacturing a circuit module for connecting an electronic component and a substrate by irradiating a laser beam or an electromagnetic wave to a connected portion, comprising: immediately irradiating the connected portion with a laser beam or an electromagnetic wave;
A method for manufacturing a circuit module, comprising forcibly cooling at least a connected portion.
【請求項2】 強制冷却が、少なくとも被接続部にガス
を吹き付けることにより実施される、 ことを特徴とする請求項1記載の回路モジュールの製造
方法。
2. The method for manufacturing a circuit module according to claim 1, wherein the forced cooling is performed by blowing a gas onto at least a connected portion.
【請求項3】 被接続部にレーザ光線または電磁波を照
射して電子部品と基板との接続を行う回路モジュールの
製造方法であって、 被接続部にレーザ光線または電磁波を照射するときまた
はその直後に、エネルギー付与によって被接続部で発生
した汚染ガスを強制排気する、 ことを特徴とする回路モジュールの製造方法。
3. A method of manufacturing a circuit module for connecting an electronic component and a substrate by irradiating a laser beam or an electromagnetic wave to a connected portion, wherein the laser beam or the electromagnetic wave is irradiated to the connected portion or immediately thereafter. And forcibly exhausting a contaminated gas generated in the connected portion by applying energy.
【請求項4】 被接続部にレーザ光線または電磁波を照
射して電子部品と基板との接続を行う回路モジュールの
製造方法であって、 少なくとも被接続部を不活性ガス雰囲気中におき、同状
態で被接続部にレーザ光線または電磁波を照射する、 ことを特徴とする回路モジュールの製造方法。
4. A method of manufacturing a circuit module for connecting an electronic component and a substrate by irradiating a laser beam or an electromagnetic wave to a connected portion, wherein at least the connected portion is placed in an inert gas atmosphere, and A method for manufacturing a circuit module, comprising irradiating a laser beam or an electromagnetic wave to a connected portion in the method.
【請求項5】 被接続部にレーザ光線または電磁波を照
射して電子部品と基板との接続を行う回路モジュールの
製造方法であって、 少なくとも被接続部を予熱した後、被接続部にレーザ光
線または電磁波を照射する、 ことを特徴とする回路モジュールの製造方法。
5. A method for manufacturing a circuit module for connecting an electronic component and a substrate by irradiating a laser beam or an electromagnetic wave to a connected portion, wherein at least the connected portion is preheated and then the laser beam is applied to the connected portion. Or irradiating an electromagnetic wave.
【請求項6】 被接続部の予熱が、少なくとも被接続部
に常温よりも温度の高いガスを吹き付けることにより実
施される、 ことを特徴とする請求項5記載の回路モジュールの製造
方法。
6. The method for manufacturing a circuit module according to claim 5, wherein the preheating of the connected portion is performed by blowing at least a gas having a temperature higher than a normal temperature to the connected portion.
JP9002331A 1997-01-09 1997-01-09 Circuit module manufacturing method Withdrawn JPH10200251A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9002331A JPH10200251A (en) 1997-01-09 1997-01-09 Circuit module manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9002331A JPH10200251A (en) 1997-01-09 1997-01-09 Circuit module manufacturing method

Publications (1)

Publication Number Publication Date
JPH10200251A true JPH10200251A (en) 1998-07-31

Family

ID=11526339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9002331A Withdrawn JPH10200251A (en) 1997-01-09 1997-01-09 Circuit module manufacturing method

Country Status (1)

Country Link
JP (1) JPH10200251A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347610A (en) * 2004-06-04 2005-12-15 Ricoh Microelectronics Co Ltd Electronic component mounting method
JP2007059825A (en) * 2005-08-26 2007-03-08 Eco & Engineering Co Ltd Hybrid type light converging heater and connecting method for solar battery element using same
JP2007229739A (en) * 2006-02-28 2007-09-13 Jfe Steel Kk Laser brazing method for high strength steel sheet
JP2009231415A (en) * 2008-03-21 2009-10-08 Fujikura Ltd Method and apparatus for reflow soldering
JP2015126222A (en) * 2013-12-27 2015-07-06 ヤマハ発動機株式会社 Inspection device
JP2020123722A (en) * 2019-01-29 2020-08-13 プロテック カンパニー リミテッドProtec Co., Ltd. Nitrogen atmosphere laser bonding device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347610A (en) * 2004-06-04 2005-12-15 Ricoh Microelectronics Co Ltd Electronic component mounting method
JP2007059825A (en) * 2005-08-26 2007-03-08 Eco & Engineering Co Ltd Hybrid type light converging heater and connecting method for solar battery element using same
JP2007229739A (en) * 2006-02-28 2007-09-13 Jfe Steel Kk Laser brazing method for high strength steel sheet
JP2009231415A (en) * 2008-03-21 2009-10-08 Fujikura Ltd Method and apparatus for reflow soldering
JP2015126222A (en) * 2013-12-27 2015-07-06 ヤマハ発動機株式会社 Inspection device
JP2020123722A (en) * 2019-01-29 2020-08-13 プロテック カンパニー リミテッドProtec Co., Ltd. Nitrogen atmosphere laser bonding device

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