JPH10208908A - Current limiting element and method of manufacturing the same - Google Patents

Current limiting element and method of manufacturing the same

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Publication number
JPH10208908A
JPH10208908A JP603997A JP603997A JPH10208908A JP H10208908 A JPH10208908 A JP H10208908A JP 603997 A JP603997 A JP 603997A JP 603997 A JP603997 A JP 603997A JP H10208908 A JPH10208908 A JP H10208908A
Authority
JP
Japan
Prior art keywords
resistor
electrode
current limiting
limiting element
brazing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP603997A
Other languages
Japanese (ja)
Inventor
Toshiyuki Yoshizawa
利之 吉沢
Takuya Suzuki
卓弥 鈴木
Kenji Kunihara
健二 国原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP603997A priority Critical patent/JPH10208908A/en
Publication of JPH10208908A publication Critical patent/JPH10208908A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】 【課題】酸化バナジウム系セラミツクスからなる円柱状
の抵抗体の両端に電極をろう材を介してろう付け接合
し、抵抗体表面に低融点ガラスの酸化防止膜を被着して
なる限流素子において、ガラスコートの欠陥を無くし、
長期信頼性に優れる限流素子およびその製造方法を提供
する。 【解決手段】電極3の直径をV2 3 抵抗体1のそれよ
りも大きくとることにより、電極3とV2 3 抵抗体1
との接合部の外周をろう溜まりとして、フイレットを形
成し、界面の濡れ不良を改善し、ガラスコートの空孔や
クラックを防止する。また、電極外周の接合面側にテー
パーを設けたテーパ付き電極6を用いることにより、同
様の効果が得られる。ろう材を電極、V2 3 抵抗体1
の端面に形成しておいてもよい。
(57) 【Abstract】 PROBLEM TO BE SOLVED: To join electrodes to both ends of a columnar resistor made of vanadium oxide-based ceramics via a brazing material, and apply an antioxidant film of low melting glass on the resistor surface. In the current limiting element, the defect of the glass coat is eliminated,
Provided are a current limiting element having excellent long-term reliability and a method for manufacturing the same. An electrode (3) and a V 2 O 3 resistor (1) are made larger in diameter than that of a V 2 O 3 resistor (1).
A fillet is formed on the outer periphery of the joint portion with the filler to form a fillet, thereby improving poor wetting at the interface, and preventing voids and cracks in the glass coat. The same effect can be obtained by using the tapered electrode 6 having a taper on the bonding surface side of the outer periphery of the electrode. Brazing material as electrode, V 2 O 3 resistor 1
May be formed on the end face.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】この発明は、正の抵抗温度係数を
持つ(PTC)抵抗体を用いる限流素子に係り、特に長
期にわたる信頼性に優れる限流素子およびその製造方法
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a current limiting element using a (PTC) resistor having a positive temperature coefficient of resistance, and more particularly to a current limiting element excellent in long-term reliability and a method of manufacturing the same.

【0002】[0002]

【従来の技術】近年、低圧配電系統においても大容量化
が進展し、それに伴い負荷が短絡した際に流れる過電流
も大電流化しており、ブレーカーについても高遮断容量
化が望まれている。このような技術動向に対応して、大
電流、大電力用の過電流保護素子として酸化バナジウム
(以下V2 3 と記す)系セラミックスを主成分とする
PTC抵抗体を用いる限流素子の利用が期待されてい
る。
2. Description of the Related Art In recent years, the capacity of a low-voltage distribution system has been increased, and the overcurrent flowing when a load is short-circuited has been increased accordingly. In response to such technical trends, use of a current limiting element using a PTC resistor mainly composed of vanadium oxide (hereinafter referred to as V 2 O 3 ) -based ceramics as an overcurrent protection element for large current and large power. Is expected.

【0003】V2 3 系セラミックスは100℃〜20
0℃の間で金属から絶縁物に転移する性質を有してお
り、室温付近では比抵抗が10-3Ω・cmと小さいが、
100〜150℃にかけて緩やかに増大し、150℃付
近で二桁程急激に増大し(この急増する温度を転移温度
と称する)、150〜200℃においてピークとなり、
それ以上の温度では低下する性質を有する。
[0003] V 2 O 3 -based ceramics are
It has the property of transitioning from a metal to an insulator between 0 ° C, and its specific resistance is as small as 10 -3 Ω · cm around room temperature.
It gradually increases from 100 to 150 ° C., rapidly increases by about two digits near 150 ° C. (this rapidly increasing temperature is referred to as a transition temperature), peaks at 150 to 200 ° C.,
It has the property of decreasing at higher temperatures.

【0004】このような性質を有するV2 3 抵抗体は
過電流が流れた際のジュール熱によって温度が上昇し、
抵抗値が増大することを利用して、その抵抗増大により
過電流を限流することができる。そして、電極を接合し
た限流素子として用いられている。しかし、PTC特性
を有する三酸化バナジウム(V2 3 )は、大気中では
不安定相であるため、正常電流が流れている通常状態に
おける通電による若干の発熱でも容易に酸化が進行し
て、例えばVO2 のようなV2 3 の過酸化物に変質
し、PTC特性が劣化する。PTC特性の劣化は、過電
流保護素子としての機能を著しく低下させるため、V2
3 の酸化を防止することが重要である。
The temperature of a V 2 O 3 resistor having such properties increases due to Joule heat when an overcurrent flows,
By utilizing the increase in the resistance value, the overcurrent can be limited by the increase in the resistance. And it is used as a current limiting element which joined the electrodes. However, vanadium trioxide (V 2 O 3 ) having PTC characteristics is an unstable phase in the atmosphere, so that oxidation proceeds easily even with a slight heat generation due to energization in a normal state where a normal current flows. For example, it is transformed into a peroxide of V 2 O 3 such as VO 2 , and the PTC characteristic is deteriorated. Since the deterioration of the PTC characteristic significantly lowers the function as an overcurrent protection element, V 2
It is important to prevent O 3 oxidation.

【0005】先に発明者のグループは限流素子の非電極
部表面に酸化防止膜として、亜鉛ガラス等の低融点ガラ
ス粉末のペーストを塗布し、窒素中など中性の雰囲気中
で熱処理して、ガラスを溶融、固化した、ガラスコート
が適当であることを見いだし、提案した。[特許願平8
−128889号(平成8年5月24日出願)]
First, the group of the inventors applied a paste of a low melting point glass powder such as zinc glass as an antioxidant film on the surface of the non-electrode portion of the current limiting element, and heat-treated in a neutral atmosphere such as nitrogen. The glass was melted and solidified, and a glass coat was found to be suitable and proposed. [Patent Application 8
No.-128889 (filed on May 24, 1996)]

【0006】[0006]

【発明が解決しようとする課題】しかしながら、限流素
子製造を重ねるうち、不良発生の幾分かを酸化防止用の
ガラスコートが不完全なものが占めることがわかった。
図3(a)ないし(c)は、その機構の一例を説明する
ための製造工程順に示した断面図である。従来V2 3
抵抗体1の径と、電極3の径とは同じであったが、その
場合、V2 3 抵抗体1の径と、電極3とを接合するろ
う箔2の位置ずれ[図3(a)]等により、電極3の側
面に融けたろう2aが流れ出し、接合界面に部分的な濡
れ不良が発生することがある[同図(b)]。このため
に前述のガラスペーストの熱処理時の固化に伴うガラス
の収縮により、ガラスコート4の凹んだ部分に空孔8や
クラック9が発生する[同図(c)]。このような欠陥
を生じた限流素子は、長期の使用中にV2 3 の酸化が
進み、特性が劣化することになる。
However, during the manufacture of current limiting devices, it has been found that some of the defects are caused by incomplete glass coatings for preventing oxidation.
3A to 3C are cross-sectional views illustrating an example of the mechanism in order of a manufacturing process. Conventional V 2 O 3
Although the diameter of the resistor 1 and the diameter of the electrode 3 were the same, in this case, the diameter of the V 2 O 3 resistor 1 and the displacement of the brazing foil 2 joining the electrode 3 [FIG. )], The molten solder 2a flows out to the side surface of the electrode 3, and a partial wetting failure may occur at the bonding interface [FIG. For this reason, pores 8 and cracks 9 are generated in the recessed portions of the glass coat 4 due to the shrinkage of the glass accompanying the solidification during the heat treatment of the above-mentioned glass paste [FIG. In the current limiting element having such a defect, the oxidation of V 2 O 3 proceeds during long-term use, and the characteristics are degraded.

【0007】本発明は、上述の問題点を解決するために
なされ、その目的は、V2 3 抵抗体を覆うガラスコー
トの欠陥を無くし、長期信頼性に優れる限流素子および
その製造方法を提供することにある。
An object of the present invention is to solve the above-mentioned problems, and an object of the present invention is to provide a current limiting element which eliminates defects in a glass coat covering a V 2 O 3 resistor and has excellent long-term reliability, and a method of manufacturing the same. To provide.

【0008】[0008]

【課題を解決するための手段】上記課題解決のため本発
明は、V2 3 系セラミツクスからなる円柱状のV2
3 抵抗体の両端に電極をろう材を介して真空ろう付け接
合し、V2 3 抵抗体表面に低融点ガラスの酸化防止膜
を被着してなる限流素子において、電極の径が、V2
3 抵抗体の径よりも大きいものとする。
SUMMARY OF THE INVENTION The present invention for the above problems solved, cylindrical V 2 O consisting of V 2 O 3 based ceramics
(3 ) In a current limiting element in which electrodes are vacuum brazed to both ends of a resistor through a brazing material and an antioxidant film of low-melting glass is applied to the surface of the V 2 O 3 resistor, the diameter of the electrode is V 2 O
3 It shall be larger than the diameter of the resistor.

【0009】そのような電極を用いた限流素子とすれ
ば、接合界面の外周に、底角が90度のろう溜まりがで
きる、電極側への流れ出しによる接合界面の濡れ不良が
無くなる。また、溜まったろうの表面がテーパー状(フ
ィレツト)となり、連続的な表面となるため、ガラスコ
ートのクラック等が防止できる。電極外周の接合面側の
少なくとも一部に接合面側が小さいテーパーを設けても
よい。
In the case of a current limiting element using such an electrode, a brazing with a base angle of 90 ° can be formed on the outer periphery of the bonding interface, and poor wetting of the bonding interface due to the flow out to the electrode side can be eliminated. In addition, since the surface of the accumulated solder becomes tapered (fillet) and becomes a continuous surface, cracks in the glass coat can be prevented. At least a part of the outer peripheral surface of the electrode may be provided with a small taper on the outer surface.

【0010】電極外周の接合面側にテーパーをつけて
も、上述と同様の効果が得られる。本発明の限流素子の
製造方法としては、径がV2 3 抵抗体の径よりも大き
く、厚さ5〜500μmのろう箔を用いてろう付け接合
するものとする。そのようにすれば、ろう材の位置ずれ
が防止できる。厚さ5μm以下では接合不十分となり、
500μm以上では、ろう材が流れ出る。
The same effect as described above can be obtained even if a taper is provided on the bonding surface side of the outer periphery of the electrode. As a method of manufacturing the current limiting element of the present invention, brazing is performed using a brazing foil having a diameter larger than the diameter of the V 2 O 3 resistor and a thickness of 5 to 500 μm. By doing so, displacement of the brazing material can be prevented. When the thickness is 5 μm or less, the bonding becomes insufficient.
If it is 500 μm or more, the brazing material flows out.

【0011】また、接合するV2 3 抵抗体および電極
の端面の少なくとも一方にろう材を1〜10μmの厚さ
にスパッタリングし、そのろう材でろう付け接合するこ
ともできる。上述と同様の効果があり、更に取扱が容易
になる。厚さ1μm以下では接合不十分となり、10μ
m以上では、スパッタに時間を要し、量産に適さない。
Also, a brazing material may be sputtered to at least one of the V 2 O 3 resistor and the end face of the electrode to a thickness of 1 to 10 μm, and brazing may be performed with the brazing material. The same effect as described above is obtained, and handling is further facilitated. If the thickness is less than 1 μm, the bonding becomes insufficient and 10 μm
If it is more than m, time is required for sputtering, and it is not suitable for mass production.

【0012】[0012]

【発明の実施の形態】次にこの発明の実施例を図面に基
づいて説明する。 [実施例1]図1(c)は、本発明第一の実施例にかか
る限流素子の断面図であり、図1(a)および(b)は
その製造工程途中の断面図である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the drawings. [Embodiment 1] FIG. 1C is a sectional view of a current limiting element according to a first embodiment of the present invention, and FIGS. 1A and 1B are sectional views in the middle of the manufacturing process.

【0013】図1(a)において1は、V2 5 または
2 3 と、Cr2 3 、Fe2 3 を原料とし、湿式
ボールミルで12時間混合粉砕し、乾燥した粉末を成形
した後、水素気流中で1500℃、1時間焼成したV2
3 抵抗体であり、組成は、例えば(V0.9965Cr
0.00352 3 +Fe5wt%となるものであり、寸法
はφ12×20mmである。
In FIG. 1A, 1 is VTwoOFiveOr
VTwoOThreeAnd CrTwoOThree, FeTwoO ThreeRaw material, wet type
Mix and crush with a ball mill for 12 hours to form a dry powder
And then fired in a hydrogen stream at 1500 ° C. for 1 hour.Two
OThreeA resistor having a composition of, for example, (V0.9965Cr
0.0035)TwoOThree+ Fe5wt%
Is φ12 × 20 mm.

【0014】2はAg−Cu共晶ろう箔であり、寸法は
φ12×50μmである。3はφ15×5mmのMo電
極である。Cu電極でもよい。V2 3 抵抗体1、Ag
−Cu共晶のろう箔2、Mo電極3を長さ方向に積み重
ね、[図1(a)]、真空中で750℃×5分間焼成
し、電極付けした[図1(b)]。接合界面の濡れ不良
がなく、溶融固化したろう2aにより全周にわたり綺麗
にフィレツトが形成された。
Reference numeral 2 denotes an Ag—Cu eutectic brazing foil having a size of φ12 × 50 μm. Reference numeral 3 denotes a Mo electrode of φ15 × 5 mm. A Cu electrode may be used. V 2 O 3 resistor 1, Ag
A Cu eutectic brazing foil 2 and a Mo electrode 3 were stacked in the longitudinal direction [FIG. 1 (a)], and baked in a vacuum at 750 ° C. for 5 minutes to attach electrodes [FIG. 1 (b)]. There was no poor wetting at the joining interface, and a fine fillet was formed over the entire circumference by the molten and solidified solder 2a.

【0015】その後、ZnOを主成分とする低融点ガラ
スペーストを塗布し、窒素中で700℃×10分間焼成
してガラスコート4を形成した[図1(c)]。ガラス
コート4には、目視だけでなく、顕微鏡的にも空孔やク
ラツク等が、観察されなくなった。その結果、ガラスコ
ートの欠陥による不良率は従来の約1/10以下に減少
した。これは、Mo電極3の径をV2 3 抵抗体1のそ
れより大きくし、ろう溜まりを作って接合界面の濡れ不
良やろう流れを無くしたことによる。
Thereafter, a low-melting glass paste containing ZnO as a main component was applied and baked in nitrogen at 700 ° C. for 10 minutes to form a glass coat 4 (FIG. 1C). In the glass coat 4, voids, cracks and the like were not observed not only visually but also microscopically. As a result, the defect rate due to the defect of the glass coat was reduced to about 1/10 or less of the related art. This is because the diameter of the Mo electrode 3 was made larger than that of the V 2 O 3 resistor 1 and a solder pool was formed to eliminate poor wetting and solder flow at the bonding interface.

【0016】[実施例2]図2(c)は、本発明第二の
実施例にかかる限流素子の断面図であり、図2(a)お
よび(b)はその製造工程途中の断面図である。図2
(a)において、5はV2 3 抵抗体の接合面にスパッ
タ法により1%Ti入りAg−Cu共晶ろう層7を5μ
m形成したV2 3 抵抗体である。
[Embodiment 2] FIG. 2C is a sectional view of a current limiting element according to a second embodiment of the present invention, and FIGS. 2A and 2B are sectional views in the course of the manufacturing process. It is. FIG.
5 (a), a 5 μm thick Ag—Cu eutectic brazing layer 7 containing 1% Ti was formed on the bonding surface of the V 2 O 3 resistor by sputtering.
m formed V 2 O 3 resistor.

【0017】6はテーパーをつけた電極であり、接合側
の径が12.5mm、電極面側の径が15mmである。
テーパー付き電極6の接合側の径はV2 3 抵抗体1の
それより少しだけ大きい方がよい。また、テーパーの角
度としては、溶けたろうが流れ出てしまわないように接
合面に対してあまり急でなく、45度以下がよい。5、
6を長さ方向に積み重ね[図2(a)]、真空中で75
0℃×5分間焼成し、電極付けした[同図(b)]。接
合界面の濡れ不良がなく、全周にわたり綺麗にフィレツ
トが形成された。しかもろう材の量が制限されるため、
接合面からのろう材のはみ出しも少なくなり、良好な表
面形状が得られる。
Reference numeral 6 denotes a tapered electrode having a diameter of 12.5 mm on the bonding side and 15 mm on the electrode surface side.
It is better that the diameter of the tapered electrode 6 on the joining side is slightly larger than that of the V 2 O 3 resistor 1. The angle of the taper is not so steep with respect to the joining surface so that the melted solder does not flow out, and is preferably 45 degrees or less. 5,
6 in the longitudinal direction [FIG. 2 (a)]
It was baked at 0 ° C. for 5 minutes, and electrodes were attached [FIG. There was no poor wetting at the joint interface, and a fillet was formed cleanly over the entire circumference. And because the amount of brazing material is limited,
Extrusion of the brazing material from the joint surface is reduced, and a good surface shape is obtained.

【0018】その後低融点ガラスペーストを塗布し、窒
素中で700℃×10分間焼成によりガラスコート4を
形成した[図3(c)]。この例でも、ガラスコート4
に空孔やクラツク等は発生しなかった。Ag−Cu共晶
のろう層7は、接合するMo電極側、或いは両方にスパ
ッタ法で被着しても良い。
Thereafter, a low-melting glass paste was applied and baked in nitrogen at 700 ° C. for 10 minutes to form a glass coat 4 (FIG. 3C). Also in this example, the glass coat 4
No voids or cracks were generated. The Ag-Cu eutectic brazing layer 7 may be deposited on the Mo electrode side to be joined or on both sides by a sputtering method.

【0019】この例では、Ag−Cu共晶ろう層を形成
したV2 3 抵抗体とテーパー付き電極とを同時に使用
したが、両者が必要なわけではなく、テーパー付き電極
と、ろう箔、或いは、Ag−Cu共晶ろう層を形成した
2 3 抵抗体とテーパー無しの電極との組み合わせで
もよい。
In this example, the V 2 O 3 resistor on which the Ag-Cu eutectic brazing layer was formed and the tapered electrode were used at the same time. However, both are not required, and the tapered electrode, the brazing foil, Alternatively, a combination of a V 2 O 3 resistor on which an Ag—Cu eutectic brazing layer is formed and an electrode without a taper may be used.

【0020】[0020]

【発明の効果】以上説明したように本発明によれば、V
2 3 抵抗体径よりも電極径を大きくし、また、電極外
周の接合面側にテーパーを設けることによって、接合部
界面の濡れ不良が改善され、酸化防止膜であるガラスコ
ートの欠陥の発生が防止できるため、長期信頼性に優れ
る限流素子が得られる。
As described above, according to the present invention, V
By making the diameter of the electrode larger than the diameter of the 2 O 3 resistor and providing a taper on the bonding surface side of the outer periphery of the electrode, poor wetting at the interface of the bonding portion is improved, and the occurrence of defects in the glass coat as an antioxidant film is generated. Therefore, a current limiting element having excellent long-term reliability can be obtained.

【0021】ろう材を予めV2 3 抵抗体、電極のいず
れか一方または両方の接合面にスパッタしておけば、取
扱も容易であり、ろう材の量が制限されるため、接合面
からのろう材のはみ出しも少なくなり、良好な接合形状
が得られる。
If the brazing material is previously sputtered on one or both of the V 2 O 3 resistor and the electrode, the handling is easy and the amount of the brazing material is limited. The protrusion of the brazing material is reduced, and a good joint shape is obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)および(b)は本発明実施例1の限流素
子の製造工程途中の断面図、(c)は工程終了後の断面
1 (a) and 1 (b) are cross-sectional views of a current limiting element according to a first embodiment of the present invention during a manufacturing process, and FIG.

【図2】(a)および(b)は本発明実施例2の限流素
子の製造工程途中の断面図、(c)は工程終了後の断面
2 (a) and 2 (b) are cross-sectional views of a current limiting element according to Embodiment 2 of the present invention during a manufacturing process, and FIG. 2 (c) is a cross-sectional view after the process is completed.

【図3】(a)および(b)は従来の限流素子の製造工
程途中の断面図、(c)は工程終了後の断面図
3 (a) and 3 (b) are cross-sectional views in the middle of a conventional process of manufacturing a current limiting element, and FIG. 3 (c) is a cross-sectional view after the process is completed.

【符号の説明】[Explanation of symbols]

1 V2 3 抵抗体 2 ろう箔 2a 溶融、固化したろう 3 電極 4 ガラスコート 5 Ag−Cu共晶ろう層付きのV2 3 抵抗体 6 テーパー付き電極 7 Ag−Cu共晶ろう層 8 空孔 9 クラック1 V 2 O 3 resistor 2 brazing foils 2a melt, V 2 O 3 resistor 6 tapered electrode 7 with would have solidified 3 electrode 4 glass coat 5 Ag-Cu eutectic brazing layer Ag-Cu eutectic brazing layer 8 Hole 9 crack

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】酸化バナジウム系セラミツクスからなる円
柱状の酸化バナジウム抵抗体の両端に電極をろう付け接
合し、抵抗体表面に低融点ガラスの酸化防止膜を被着し
てなる限流素子において、電極の径が、酸化バナジウム
抵抗体の径よりも大きいことを特徴とする限流素子。
1. A current limiting device comprising a columnar vanadium oxide resistor made of vanadium oxide-based ceramics, electrodes joined to both ends by brazing, and an antioxidant film of low-melting glass adhered to the surface of the resistor. A current-limiting element, wherein the diameter of the electrode is larger than the diameter of the vanadium oxide resistor.
【請求項2】電極外周の接合面側の少なくとも一部に接
合面側が小さいテーパーを設けたことを特徴とする請求
項1記載の限流素子。
2. The current limiting element according to claim 1, wherein at least a part of the outer peripheral surface of the electrode is provided with a small taper on the bonding surface side.
【請求項3】径が酸化バナジウム抵抗体の径よりも大き
く、厚さ5〜500μmのろう箔を用いてろう付け接合
することを特徴とする請求項1または2に記載の限流素
子の製造方法。
3. The current limiting element according to claim 1, wherein the brazing is performed using a brazing foil having a diameter larger than that of the vanadium oxide resistor and a thickness of 5 to 500 μm. Method.
【請求項4】接合する酸化バナジウム抵抗体および電極
の端面の少なくとも一方にろう層を1〜10μmの厚さ
にスパッタリングし、そのろう材でろう付け接合するこ
とを特徴とする請求項1または2に記載の限流素子の製
造方法。
4. A brazing layer is sputtered to at least one of the end faces of the vanadium oxide resistor and the electrode to be joined to a thickness of 1 to 10 μm, and brazing is performed with the brazing material. 3. The method for manufacturing a current limiting element according to claim 1.
JP603997A 1997-01-17 1997-01-17 Current limiting element and method of manufacturing the same Pending JPH10208908A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP603997A JPH10208908A (en) 1997-01-17 1997-01-17 Current limiting element and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP603997A JPH10208908A (en) 1997-01-17 1997-01-17 Current limiting element and method of manufacturing the same

Publications (1)

Publication Number Publication Date
JPH10208908A true JPH10208908A (en) 1998-08-07

Family

ID=11627509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP603997A Pending JPH10208908A (en) 1997-01-17 1997-01-17 Current limiting element and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JPH10208908A (en)

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