JPH10242575A - Semiconductor element - Google Patents
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- JPH10242575A JPH10242575A JP4037097A JP4037097A JPH10242575A JP H10242575 A JPH10242575 A JP H10242575A JP 4037097 A JP4037097 A JP 4037097A JP 4037097 A JP4037097 A JP 4037097A JP H10242575 A JPH10242575 A JP H10242575A
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Abstract
(57)【要約】
【課題】拡散により電流狭窄構造を作製する際、拡散領
域の制御が難しい。そのため、幅が良く制御されたスト
ライプ構造の作製が困難である。
【解決手段】II族元素を拡散させる層と拡散を抑制する
層を導入することで、II族元素が拡散する領域を制御し
て、電流狭窄構造を作製する。また、量子井戸構造や超
格子構成で、平坦なヘテロ界面を得る。
[PROBLEMS] To control a diffusion region when a current confinement structure is manufactured by diffusion. Therefore, it is difficult to manufacture a stripe structure having a well-controlled width. A current confinement structure is manufactured by introducing a layer that diffuses a group II element and a layer that suppresses the diffusion to control a region where a group II element diffuses. Further, a flat heterointerface is obtained with a quantum well structure or a superlattice configuration.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体素子に関す
る。[0001] The present invention relates to a semiconductor device.
【０００２】[0002]
【従来の技術】II−VI族化合物半導体で半導体素子、特
に発光素子を作製する場合、有機金属気相成長法や分子
線エピタキシー法が用いられる。有機金属気相成長法
は、分子線エピタキシー法に比べて、結晶成長時の基板
温度が２００℃程度高い。そのため、結晶成長時にII族
元素の拡散が生じ、良質なヘテロ界面が得られず、量子
井戸構造や超格子構造の作製が難しい。2. Description of the Related Art When manufacturing a semiconductor device, particularly a light emitting device, using a II-VI compound semiconductor, a metal organic chemical vapor deposition method or a molecular beam epitaxy method is used. In the metal organic chemical vapor deposition method, the substrate temperature during crystal growth is higher by about 200 ° C. than in the molecular beam epitaxy method. For this reason, the diffusion of the group II element occurs during crystal growth, and a high-quality heterointerface cannot be obtained, and it is difficult to produce a quantum well structure or a superlattice structure.
【０００３】また、発光素子の構造としてはダブルヘテ
ロ構造を用いることが多い。そのとき、素子特性を向上
させるために、電流狭窄構造を作製する。その方法とし
ては、現在のところ、ウエットエッチングにより不要な
部分を取り除いた後、高抵抗な材料で取り除いた部分を
埋め込む方法や、イオン打ち込みにより不要な部分を高
抵抗化させる方法等が用いられている。また、特定の元
素を拡散させて拡散部分を高抵抗化させる方法もある。In addition, a double hetero structure is often used as a structure of a light emitting element. At that time, in order to improve the element characteristics, a current confinement structure is manufactured. At present, a method of removing unnecessary portions by wet etching and then embedding the removed portions with a high-resistance material, a method of increasing unnecessary portions by ion implantation, and the like are used. I have. There is also a method of diffusing a specific element to increase the resistance of the diffused portion.
【０００４】[0004]
【発明が解決しようとする課題】上記のような電流狭窄
構造の作製方法では、結晶成長を終えたあとにウエット
エッチングやイオン打ち込み等の工程を経てレーザ素子
が作製される。ウエットエッチングにより電流狭窄構造
を作製する場合、エッチング深さの制御性が良く、エッ
チング後の薄膜表面が鏡面であるようなエッチング液が
求められる。しかし、II−VI族化合物半導体では、現在
そのようなエッチング液は見つかっていない。In the above-described method of manufacturing a current confinement structure, a laser element is manufactured through a process such as wet etching or ion implantation after crystal growth. When a current confinement structure is manufactured by wet etching, an etchant having good controllability of the etching depth and a mirror-finished thin film surface is required. However, such an etchant has not been found in II-VI compound semiconductors at present.
【０００５】また、イオン打ち込みにより電流狭窄構造
を作製する場合、イオンによる結晶へのダメージが大き
く素子性能の向上が望めない。In the case where a current confinement structure is manufactured by ion implantation, damage to the crystal due to ions is large, and improvement in element performance cannot be expected.
【０００６】また、特定の元素を拡散させて電流狭窄構
造を作製する方法では、拡散させる部分を制御すること
が難しい。そのため、結晶へのダメージもなく制御性に
優れた電流狭窄構造の作製方法が求められていた。In the method of manufacturing a current confinement structure by diffusing a specific element, it is difficult to control a portion to be diffused. Therefore, there has been a demand for a method for manufacturing a current confinement structure having excellent controllability without damaging the crystal.
【０００７】一方、有機金属気相成長法でII−VI族化合
物半導体を作製する場合、結晶成長時の基板温度が高い
ので、II族元素の拡散が結晶成長時に起こり良質のヘテ
ロ界面が得られないという問題がある。そのため、II族
元素の拡散を抑制する半導体層を導入する必要があるが
現在までそのような効果をもつ半導体層は見つかってい
なかった。On the other hand, when a II-VI group compound semiconductor is produced by metal organic chemical vapor deposition, the substrate temperature during the crystal growth is high, so that the diffusion of the group II element occurs during the crystal growth and a high quality heterointerface is obtained. There is no problem. Therefore, it is necessary to introduce a semiconductor layer for suppressing the diffusion of the group II element, but no semiconductor layer having such an effect has been found until now.
【０００８】[0008]
【課題を解決するための手段】II−VI族元素の化合物で
形成された半導体素子、特に発光領域を有し、またはレ
ーザ共振器構造を有するものについて生じた上述の問題
は、以下に示す特徴を有する半導体素子の構造を採用す
ることにより解決される。SUMMARY OF THE INVENTION The above-mentioned problems arising in a semiconductor device formed of a compound of a group II-VI element, particularly in a device having a light emitting region or a laser resonator structure, have the following characteristics. The problem is solved by adopting the structure of the semiconductor element having the following.
【０００９】本発明の第一の特徴は、半導体素子構造中
に拡散を抑制する半導体層を設けることである。A first feature of the present invention is that a semiconductor layer for suppressing diffusion is provided in a semiconductor device structure.
【００１０】本発明の第二の特徴は、拡散を抑制する半
導体層を量子井戸構造、または超格子構造の障壁層（即
ち、禁制帯幅の大きい方の層）とすることである。A second feature of the present invention is that the semiconductor layer for suppressing diffusion is a barrier layer having a quantum well structure or a superlattice structure (that is, a layer having a larger forbidden band width).
【００１１】これらの層は、特にII族元素、例えば、Ｍ
ｇ，Ｚｎ，Ｃｄ，Ｈｇ，ＣａとVI族元素、例えばＳ，Ｓ
ｅ，Ｔｅを含んで構成される、所謂II−VI族半導体材料
からなる素子において、適切な組成を有するII−VI族半
導体材料で形成されると効果を発揮する。適切な組成の
一例としては、少なくともＳを含んでなるII−VI族元素
であり、望ましくは、Ｍｇを含むものである。[0011] These layers are in particular group II elements, for example M
g, Zn, Cd, Hg, Ca and a group VI element such as S, S
In a device made of a so-called II-VI semiconductor material containing e and Te, an effect is exhibited when the device is formed of a II-VI semiconductor material having an appropriate composition. One example of a suitable composition is a group II-VI element comprising at least S, preferably comprising Mg.
【００１２】また構成元素は３種またはそれ以上が望ま
しい。It is desirable that the number of constituent elements is three or more.
【００１３】[0013]
（実施例１）図１は、本発明における半導体レーザの一
実施例である。１はｎ−ＧａＡｓ基板、２はｎ−Ｚｎ
1-xＭｇxＳyＳｅ1-y（ｘ＝０.０８，ｙ＝０.１５）クラ
ッド層、３はｎ−ＺｎＳzＳｅ1-z（ｚ＝０.０８）光ガ
イド層、４はＺｎkＣｄ1-kＳｅ（ｋ＝０.３）活性層、
５はＣｄが拡散したＺｎＳzＳｅ1-z（ｚ＝０.０８）電
流狭窄層、６はｐ−ＺｎＳzＳｅ1-z（ｚ＝０.０８）光
ガイド層、７はｐ−Ｚｎ1-xＭｇxＳyＳｅ1-y（ｘ＝０.
０８，ｙ＝０.１５）拡散抑制層、８はｐ−Ｚｎ1-aＣｄ
aＳbＳｅ1-b（ａ＝０.２，ｂ＝０.１）からなるＣｄ拡
散層、９はｐ−Ｚｎ1-xＭｇxＳyＳｅ1-y（ｘ＝０.０
８，ｙ＝０.１５）クラッド層、１０はｐ−ＺｎＳzＳｅ
1-z(ｚ＝０.０８）層、１１はＺｎＴｅ／ＺｎＳｅ超格
子キャップ層である。(Embodiment 1) FIG. 1 shows an embodiment of a semiconductor laser according to the present invention. 1 is an n-GaAs substrate, 2 is n-Zn
1-x Mg x S y Se 1-y (x = 0.08, y = 0.15) cladding layer, 3 is an n-ZnS z Se 1-z (z = 0.08) light guide layer, 4 is Zn k Cd 1-k Se (k = 0.3) active layer,
5 is a ZnS z Se 1-z (z = 0.08) current confinement layer in which Cd is diffused, 6 is a p-ZnS z Se 1-z (z = 0.08) light guide layer, and 7 is p-Zn 1 -x Mg x S y Se 1-y (x = 0.
08, y = 0.15) Diffusion suppressing layer, 8 is p-Zn 1-a Cd
a S b Se 1-b ( a = 0.2, b = 0.1) consisting of Cd diffusion layer, 9 p-Zn 1-x Mg x S y Se 1-y (x = 0.0
8, y = 0.15) cladding layer, 10 is p-ZnS z Se
A 1-z (z = 0.08) layer, 11 is a ZnTe / ZnSe superlattice cap layer.
【００１４】結晶成長は、分子線エピタキシー法で行
い、まず、ｐ−Ｚn1-xＭgxＳyＳe1-y（ｘ＝０.０８，ｙ
＝０.１５）拡散抑制層７まで作製した。その後、ホト
レジストで５μｍのストライプを作り、ウエットエッチ
ングにより拡散抑制層７の不要な部分を除去した。The crystal growth is performed by the molecular beam epitaxy method. First, p-Zn 1 -x Mg x S y Se 1 -y (x = 0.08, y
= 0.15) Diffusion suppressing layer 7 was formed. Thereafter, a stripe of 5 μm was formed with photoresist, and unnecessary portions of the diffusion suppressing layer 7 were removed by wet etching.
【００１５】そして、ホトレジストを除去してから、ｐ
−Ｚｎ1-aＣｄaＳbＳｅ1-b（ａ＝０.２，ｂ＝０.１）か
らなるＣｄ拡散層８を結晶成長し、４５０℃で１時間熱
処理をしてＣｄを拡散させた。このときのＣｄの拡散深
さは、約１００ｎｍである。その後、ｐ−Ｚｎ1-xＭｇx
ＳyＳｅ1-y（ｘ＝０.０８，ｙ＝０.１５）クラッド層
９，ｐ−ＺｎＳzＳｅ1-z(ｚ＝０.０８）層１０，ＺｎＴ
ｅ／ＺｎＳｅ超格子キャップ層１１を結晶成長した。After removing the photoresist, p
A Cd diffusion layer 8 made of -Zn 1-a Cd a S b Se 1-b (a = 0.2, b = 0.1) is crystal-grown, and heat-treated at 450 ° C. for 1 hour to diffuse Cd. Was. At this time, the diffusion depth of Cd is about 100 nm. Then, p-Zn 1-x Mg x
S y Se 1-y (x = 0.08, y = 0.15) cladding layer 9, p-ZnS z Se 1-z (z = 0.08) layer 10, ZnT
The e / ZnSe superlattice cap layer 11 was crystal-grown.
【００１６】Ｃｄが拡散したＺｎＳzＳｅ1-z(ｚ＝０.０
８）電流狭窄層は、屈折率が高くなるが、光が生じる活
性層近傍は、ＺｎＳzＳｅ1-z(ｚ＝０.０８）光ガイド層
のままであるので、光閉じ込めは十分にできている。Cd-diffused ZnS z Se 1 -z (z = 0.0
8) The current confinement layer has a high refractive index, but the ZnS z Se 1-z (z = 0.08) light guide layer remains in the vicinity of the active layer where light is generated, so that sufficient light confinement can be achieved. ing.
【００１７】図２に、Ｃｄが拡散したＺｎＳzＳｅ
1-z（ｚ＝０.０８）電流狭窄層５とｐ−ＺｎＳzＳｅ1-z
(ｚ＝０.０８）光ガイド層６の２次イオン質量分析の結
果を示す。図で電流狭窄層５が拡散抑制層のない部分、
光ガイド層６が拡散抑制層のある部分に対応している。
拡散抑制層のある部分では、Ｃｄが拡散していないこと
がわかる。この素子に、電極を蒸着してレーザ発振させ
たところ従来素子よりも閾値が２０％低下した。発振波
長は、５２０ｎｍである。FIG. 2 shows ZnS z Se in which Cd is diffused.
1-z (z = 0.08) Current confinement layer 5 and p-ZnS z Se 1-z
(z = 0.08) The result of the secondary ion mass spectrometry of the light guide layer 6 is shown. In the figure, the current confinement layer 5 has no diffusion suppressing layer,
The light guide layer 6 corresponds to a portion having the diffusion suppressing layer.
It can be seen that Cd is not diffused in a portion where the diffusion suppressing layer exists. When an electrode was deposited on this element and laser oscillation was performed, the threshold value was reduced by 20% as compared with the conventional element. The oscillation wavelength is 520 nm.
【００１８】（実施例２）図３は、本発明における半導
体レーザの一実施例である。１２はｎ−ＧａＡｓ基板、
１３はｎ−Ｚｎ1-xＭｇxＳyＳｅ1-y（ｘ＝０.０８，ｙ
＝０.１５）クラッド層、１４はｎ−ＺｎＳzＳｅ
1-z（ｚ＝０.０８）光ガイド層、１５はＺｎkＣｄ1-kＳ
ｅ（ｋ＝０.１）井戸層、１６はＺｎＳyＳｅ1-y（ｙ＝
０.０８）障壁層、１７はｐ−ＺｎＳzＳｅ1-z（ｚ＝０.
０８）光ガイド層、１８はｐ−Ｚｎ1-xＭｇxＳyＳｅ1-y
（ｘ＝０.０８，ｙ＝０.１５）クラッド層、１９はｐ−
ＺｎＳzＳｅ1-z(ｚ＝０.０８）層、２０はＺｎＴｅ／Ｚ
ｎＳｅ超格子キャップ層である。(Embodiment 2) FIG. 3 shows an embodiment of a semiconductor laser according to the present invention. 12 is an n-GaAs substrate,
13 is n-Zn 1-x Mg x S y Se 1-y (x = 0.08, y
= 0.15) Cladding layer, 14 is n-ZnS z Se
1-z (z = 0.08) light guide layer, 15 is Zn k Cd 1-k S
e (k = 0.1) well layer, 16 is ZnS y Se 1-y (y =
0.08) Barrier layer, 17 is p-ZnS z Se 1-z (z = 0.
08) Light guide layer, 18 is p-Zn 1-x Mg x S y Se 1-y
(X = 0.08, y = 0.15) cladding layer, 19 is p-
ZnS z Se 1-z (z = 0.08) layer, 20 is ZnTe / Z
An nSe superlattice cap layer.
【００１９】結晶成長方法は、有機金属気相成長法で行
った。基板温度は、４５０℃だが、障壁層１６にＺｎＳ
yＳｅ1-y(ｙ＝０.０８）を用いることで井戸層１５中の
Ｃｄの拡散を抑制している。The crystal was grown by metal organic chemical vapor deposition. The substrate temperature is 450 ° C., but the barrier layer 16 has ZnS
The diffusion of Cd in the well layer 15 is suppressed by using y Se 1-y (y = 0.08).
【００２０】この素子に電極を蒸着してレーザ特性（光
出力−電流特性）を測定したのが図４である。図には、
障壁層にＺｎＳｅを用いた場合をあわせて示してある。
ＺｎＳｅ障壁層では、Ｃｄが結晶成長中に拡散してしま
うため、ヘテロ界面が乱れた結果、発光効率が低くな
る。それに対して、ＺｎＳyＳｅ1-y(ｙ＝０.０８）を障
壁層に用いた場合、結晶成長中のＣｄの拡散を抑制でき
るのでヘテロ界面が平坦で、良質な活性層ができている
ので発光効率が高い。波長は、４８２ｎｍである。FIG. 4 shows a laser characteristic (light output-current characteristic) measured by depositing an electrode on this element. In the figure,
The case where ZnSe is used for the barrier layer is also shown.
In the ZnSe barrier layer, Cd diffuses during the crystal growth, so that the hetero interface is disturbed, resulting in low luminous efficiency. In contrast, when ZnS y Se 1-y (y = 0.08) is used for the barrier layer, diffusion of Cd during crystal growth can be suppressed, so that the heterointerface is flat and a high-quality active layer is formed. Therefore, the luminous efficiency is high. The wavelength is 482 nm.
【００２１】障壁層に、Ｚｎ1-xＭｇxＳyＳｅ1-y（０≦
ｘ≦１，０≦ｙ≦１、但し、ｘとｙは同時には０でな
い）を用いても同様の結果が得られた。In the barrier layer, Zn 1-x Mg x S y Se 1-y (0 ≦
Similar results were obtained using x ≦ 1, 0 ≦ y ≦ 1, where x and y were not simultaneously 0).
【００２２】（実施例３）図５は、本発明における半導
体レーザの一実施例である。２１はｎ−ＧａＡｓ基板、
２２はｎ−Ｚｎ1-xＭｇxＳyＳｅ1-y（ｘ＝０.０８，ｙ
＝０.１５）クラッド層、２３はｎ−ＺｎＳzＳｅ
1-z（ｚ＝０.０８）光ガイド層、２４はＺｎ1-xＭｇxＳ
yＳｅ1-y（ｘ＝０.０８，ｙ＝０.１５）障壁層、２５は
ＺｎkＣｄ1-kＳｅ(ｋ＝０.２)井戸層、２６はｐ−Ｚｎ
ＳzＳｅ1-z(ｚ＝０.０８)光ガイド層、２７はＣｄが拡
散したＺｎＳzＳｅ1-z(ｚ＝０.０８）電流狭窄層、２８
はｐ−Ｚｎ1-xＭｇxＳyＳｅ1-y（ｘ＝０.０８，ｙ＝０.
１５）拡散抑制層、２９はｐ−Ｚｎ1-aＣｄaＳbＳｅ1-b
（ａ＝０.２，ｂ＝０.１）からなるＣｄ拡散層、３０は
ｐ−Ｚｎ1-xＭｇxＳyＳｅ1-y（ｘ＝０.０８，ｙ＝０.１
５）クラッド層、３１はｐ−ＺｎＳzＳｅ1-z(ｚ＝０.０
８）層、３２はＺｎＴｅ／ＺｎＳｅ超格子キャップ層で
ある。(Embodiment 3) FIG. 5 shows an embodiment of a semiconductor laser according to the present invention. 21 is an n-GaAs substrate,
22 is n-Zn 1-x Mg x S y Se 1-y (x = 0.08, y
= 0.15) Cladding layer, 23 is n-ZnS z Se
1-z (z = 0.08) light guide layer, 24 is Zn 1-x Mg x S
y Se 1-y (x = 0.08, y = 0.15) barrier layer; 25, Zn k Cd 1-k Se (k = 0.2) well layer; 26, p-Zn
S z Se 1-z (z = 0.08) light guide layer, 27 is a ZnS z Se 1-z (z = 0.08) current confinement layer in which Cd is diffused, 28
Is p-Zn 1-x Mg x S y Se 1-y (x = 0.08, y = 0.
15) Diffusion suppressing layer, 29 is p-Zn 1-a Cd a S b Se 1-b
(A = 0.2, b = 0.1 ) consisting of Cd diffusion layer, 30 p-Zn 1-x Mg x S y Se 1-y (x = 0.08, y = 0.1
5) cladding layer, 31 p-ZnS z Se 1-z (z = 0.0
8) Layer 32 is a ZnTe / ZnSe superlattice cap layer.
【００２３】結晶成長は、有機金属気相成長法で行っ
た。まず、ｎ−Ｚn1-xＭgxＳyＳe1-y（ｘ＝０.０８，ｙ
＝０.１５）クラッド層からｐ−Ｚｎ1-xＭｇxＳyＳｅ
1-y（ｘ＝０.０８，ｙ＝０.１５）拡散抑制層２８まで
を１回の結晶成長で作製した。このときの基板温度は４
５０℃だが、障壁層にＺｎ1-xＭｇxＳyＳｅ1-y（ｘ＝
０.０８，ｙ＝０.１５）を用いることで、井戸層２５か
らのＣｄの拡散を抑制でき、平坦なヘテロ界面が得られ
ている。そして、ホトレジストで５μｍのストライプを
作り、ウエットエッチングにより拡散抑制層２８の不要
な部分を除去した後、ホトレジストも除去してから、ｐ
−Ｚｎ1-aＣｄaＳbＳｅ1-b（ａ＝０.２，ｂ＝０.１）か
らなるＣｄ拡散層２９を結晶成長し、５００℃で３０分
間熱処理をしてＣｄを拡散させた。このときのＣｄの拡
散深さは、約１５０ｎｍである。その後、ｐ−Ｚｎ1-x
ＭｇxＳyＳｅ1-y（ｘ＝０.０８，ｙ＝０.１５）クラッ
ド層３０，ｐ−ＺｎＳzＳｅ1-z(ｚ＝０.０８）層３１，
ＺｎＴｅ／ＺｎＳｅ超格子キャップ層３２を結晶成長し
た。The crystal growth was performed by a metal organic chemical vapor deposition method. First, n-Zn 1-x Mg x S y Se 1-y (x = 0.08, y
= 0.15) p-Zn 1-x Mg x S y Se
1-y (x = 0.08, y = 0.15) Up to the diffusion suppressing layer 28 was formed by one crystal growth. The substrate temperature at this time was 4
Although it is 50 ° C., Zn 1-x Mg x S y Se 1-y (x =
0.08, y = 0.15), the diffusion of Cd from the well layer 25 can be suppressed, and a flat heterointerface is obtained. Then, a stripe of 5 μm is formed with a photoresist, unnecessary portions of the diffusion suppressing layer 28 are removed by wet etching, and the photoresist is also removed.
A Cd diffusion layer 29 made of -Zn 1-a Cd a S b Se 1-b (a = 0.2, b = 0.1) is crystal-grown, and heat-treated at 500 ° C. for 30 minutes to diffuse Cd. Was. At this time, the diffusion depth of Cd is about 150 nm. Then, p-Zn 1-x
Mg x S y Se 1-y (x = 0.08, y = 0.15) cladding layer 30, p-ZnS z Se 1-z (z = 0.08) layer 31,
A ZnTe / ZnSe superlattice cap layer 32 was crystal-grown.
【００２４】この素子に電極を蒸着し、レーザ特性を測
定した結果、Ｃｄの拡散抑制層を用いず、障壁層にＺｎ
Ｓｅを用いた場合の素子よりも閾値が３０％低下し、発
光効率が２０％向上した。発振波長は、５０８ｎｍであ
る。Electrodes were deposited on this device, and the laser characteristics were measured. As a result, the Cd diffusion suppression layer was not used, and the Zn layer was formed on the barrier layer.
The threshold was 30% lower than that of the device using Se, and the luminous efficiency was improved by 20%. The oscillation wavelength is 508 nm.
【００２５】[0025]
【発明の効果】本発明により、II族元素の拡散を制御す
ることができ、レーザ特性を向上させることができた。According to the present invention, the diffusion of the group II element can be controlled and the laser characteristics can be improved.
【図１】本発明により作製した半導体レーザ素子の断面
図。FIG. 1 is a cross-sectional view of a semiconductor laser device manufactured according to the present invention.
【図２】本発明により作製した半導体レーザ素子のＳＩ
ＭＳ分析結果の説明図。FIG. 2 shows the SI of a semiconductor laser device manufactured according to the present invention.
Explanatory drawing of MS analysis result.
【図３】本発明により作製した半導体レーザ素子の断面
図。FIG. 3 is a cross-sectional view of a semiconductor laser device manufactured according to the present invention.
【図４】本発明により作製した半導体レーザ素子の光出
力−電流特性図。FIG. 4 is a light output-current characteristic diagram of a semiconductor laser device manufactured according to the present invention.
【図５】本発明により作製した半導体レーザ素子の断面
図。FIG. 5 is a cross-sectional view of a semiconductor laser device manufactured according to the present invention.
１…ｎ−ＧａＡｓ基板、２…ｎ−Ｚｎ1-xＭｇxＳyＳｅ
1-y（ｘ＝０.０８，ｙ＝０.１５）クラッド層、３…ｎ
−ＺｎＳzＳｅ1-z（ｚ＝０.０８）光ガイド層、４…Ｚ
ｎkＣｄ1-kＳｅ(ｋ＝０.３）活性層、５…Ｃｄが拡散し
たＺｎＳzＳｅ1-z（ｚ＝０.０８）電流狭窄層、６…ｐ
−ＺｎＳzＳｅ1-z（ｚ＝０.０８）光ガイド層、７…ｐ
−Ｚｎ1-xＭｇxＳyＳｅ1-y（ｘ＝０.０８，ｙ＝０.１
５）拡散抑制層、８…ｐ−Ｚｎ1-aＣｄaＳbＳｅ1-b（ａ
＝０.２，ｂ＝０.１）からなるＣｄ拡散層、９…ｐ−Ｚ
ｎ1-xＭｇxＳyＳｅ1-y（ｘ＝０.０８，ｙ＝０.１５）ク
ラッド層、１０…ｐ−ＺｎＳzＳｅ1-z(ｚ＝０.０８）
層、１１…ＺｎＴｅ／ＺｎＳｅ超格子キャップ層。1 ... n-GaAs substrate, 2 ... n-Zn 1-x Mg x S y Se
1-y (x = 0.08, y = 0.15) cladding layer, 3 ... n
-ZnS z Se 1-z (z = 0.08) light guide layer, 4 ... Z
nk Cd 1-k Se (k = 0.3) active layer, 5 ... Cd-diffused ZnS z Se 1-z (z = 0.08) current confinement layer, 6 ... p
—ZnS z Se 1-z (z = 0.08) light guide layer, 7.
-Zn 1-x Mg x S y Se 1-y (x = 0.08, y = 0.1
5) Diffusion suppressing layer, 8... P-Zn 1-a Cd a S b Se 1-b (a
= 0.2, b = 0.1) Cd diffusion layer, 9 ... p-Z
n 1-x Mg x S y Se 1-y (x = 0.08, y = 0.15) cladding layer, 10... p-ZnS z Se 1-z (z = 0.08)
Layers, 11 ... ZnTe / ZnSe superlattice cap layer.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 後藤 順 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 大家 彰 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Jun Goto 1-280 Higashi Koigakubo, Kokubunji City, Tokyo Inside the Central Research Laboratory of Hitachi, Ltd. Central Research Laboratory
Claims (6)
制する半導体層を有することを特徴とする半導体素子。1. A semiconductor device comprising a semiconductor layer for suppressing diffusion of a group II element.
壁層とする量子井戸構造あるいは超格子構造を有する半
導体素子。2. The semiconductor device according to claim 1, wherein the semiconductor device has a quantum well structure or a superlattice structure in which a layer for suppressing diffusion is a barrier layer.
−VI族化合物半導体である半導体素子。3. The method according to claim 1, wherein the layer for suppressing diffusion is II.
A semiconductor element which is a group VI compound semiconductor;
層を構成する元素として、ＭｇかＳのいずれかを含む半
導体素子。4. The semiconductor device according to claim 3, wherein the element forming the semiconductor layer for suppressing diffusion contains either Mg or S.
む半導体層を構成する元素として、ＣｄかＺｎのいずれ
かを含む半導体素子。5. The semiconductor device according to claim 2, wherein Cd or Zn is contained as an element constituting the semiconductor layer containing a diffusing Group II element.
た半導体素子を用いた光信号読み取り装置。6. An optical signal reading device using the semiconductor device according to claim 1, 2, 3, 4, or 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4037097A JPH10242575A (en) | 1997-02-25 | 1997-02-25 | Semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4037097A JPH10242575A (en) | 1997-02-25 | 1997-02-25 | Semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10242575A true JPH10242575A (en) | 1998-09-11 |
Family
ID=12578767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4037097A Pending JPH10242575A (en) | 1997-02-25 | 1997-02-25 | Semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10242575A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04306886A (en) * | 1991-04-03 | 1992-10-29 | Mitsubishi Electric Corp | Semiconductor light emitting element |
| JPH05121823A (en) * | 1991-09-17 | 1993-05-18 | Fuji Xerox Co Ltd | Manufacture of semiconductor laser device |
| JPH07193328A (en) * | 1993-12-27 | 1995-07-28 | Matsushita Electric Ind Co Ltd | Semiconductor laser |
| JPH0856045A (en) * | 1994-08-11 | 1996-02-27 | Hitachi Ltd | Semiconductor laser device |
| JPH08264876A (en) * | 1995-03-20 | 1996-10-11 | Hitachi Ltd | Light emitting element |
-
1997
- 1997-02-25 JP JP4037097A patent/JPH10242575A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04306886A (en) * | 1991-04-03 | 1992-10-29 | Mitsubishi Electric Corp | Semiconductor light emitting element |
| JPH05121823A (en) * | 1991-09-17 | 1993-05-18 | Fuji Xerox Co Ltd | Manufacture of semiconductor laser device |
| JPH07193328A (en) * | 1993-12-27 | 1995-07-28 | Matsushita Electric Ind Co Ltd | Semiconductor laser |
| JPH0856045A (en) * | 1994-08-11 | 1996-02-27 | Hitachi Ltd | Semiconductor laser device |
| JPH08264876A (en) * | 1995-03-20 | 1996-10-11 | Hitachi Ltd | Light emitting element |
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