JPH10270435A - Method of forming film for semiconductor device and film forming apparatus - Google Patents

Abstract

(57) [Problem] To provide a film forming apparatus improved so that a reaction by-product does not contaminate a gas head and a wafer. The apparatus includes a chamber (7) and a chamber (7).
A reaction gas supply means 10 for supplying a reaction gas into the chamber and an inert gas supply means 11 for passing an inert gas into the chamber 7 are provided. Even after film formation, the inert gas always flows,
Even if the reaction by-product 9 is peeled off, the gas head 1 and the wafer 3 are not contaminated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention generally relates to a film forming apparatus for a semiconductor device, and more particularly, to a semiconductor device improved so as to improve the yield of products and the operation rate of the device. The present invention relates to a film forming apparatus. The present invention also relates to a method for forming a film for a semiconductor device, which is improved so as to improve the product yield and the device operation rate.

[0002]

2. Description of the Related Art FIG. 2 shows a gas obtained by vaporizing tetraethoxysilane (hereinafter referred to as TEOS) as a reaction gas,
FIG. 3 is a conceptual diagram of a conventional sheet deposition apparatus for reacting ozone (O ₃ ) under normal pressure.

The film forming apparatus includes a chamber 7. The chamber 7 is provided with a gas head 1 for uniformly supplying a mixed gas of TEOS and O _{3 to} the surface of the wafer 2. The wafer stage 2 holds the wafer 3 at a constant temperature. The exhaust cover 4 is for stabilizing the gas flow around the wafer 3 during film formation. The heater 5 is for heating and maintaining the exhaust cover 4 at a constant temperature. The exhaust tray 6 is used to supply the gas after the reaction to the chamber 7.
And to separate them. The chamber 7 has
An exhaust port 8 is provided. A material gas supply pipe 10 is attached to the gas head 1. The exhaust cover 4
As will be described later, the reaction by-product 9 adheres.

[0004] TEOS · O released from gas head 1
_{3 The} mixed gas flows in the direction shown by the arrow 12, and the wafer 3 held on the wafer stage 2 at 350 ° C. to 450 ° C.
Reacts on the surface of the polymer to form a film as a reaction product. After the reaction, the unreacted gas passes between the exhaust cover 4 and the exhaust tray 6 maintained at 300 ° C. and is led to the exhaust port 8.

[0005]

A conventional film forming apparatus for a semiconductor device has been constructed as described above.

However, referring to FIG. 2, since the thermal conductivity of reaction by-product 9 is poor, as reaction by-product 9 is deposited on exhaust cover 4, the surface temperature of reaction by-product 9 decreases. descend. When the surface temperature becomes 200 ° C. or lower, the surface of the reaction by-product 9 becomes powdery and easily peels off. This adheres to the surface of the wafer 3 and causes a reduction in product yield.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and has an improved method of forming a film for a semiconductor device so as to improve the product yield and the operation rate of the device. And a film forming apparatus.

[0008]

A film forming apparatus for a semiconductor device according to the present invention relates to a film forming apparatus for a semiconductor device for forming a film on a wafer. The apparatus includes a chamber in which a wafer is placed. A reaction gas supply means for supplying a reaction gas into the chamber is connected to the chamber. An inert gas supply means for passing an inert gas into the chamber is connected to the chamber.

In the method for forming a film for a semiconductor device according to the present invention, first, a wafer is placed in a chamber. A reaction gas is supplied into the chamber to form a film on the wafer. After the film formation, the supply of the reaction gas is stopped, and subsequently, an inert gas is passed through the chamber.

[0010]

FIG. 1 is a conceptual view of a film forming apparatus for a semiconductor device according to an embodiment of the present invention. The device shown in FIG. 1 is the same as the conventional device shown in FIG. 2 except for the following points. Therefore, the same or corresponding portions are denoted by the same reference characters and description thereof will not be repeated.

The difference between the apparatus shown in FIG. 1 and the apparatus shown in FIG. 2 is that an inert gas pipe 11 for passing an inert gas into the chamber 7 is connected to the gas head 1.

The operation will be described below. The film formation on the wafer 3 is performed by supplying a material gas into the chamber 7 through the gas head 1 as in the conventional apparatus. After film formation, the inert gas is supplied from the inert gas pipe 11 at a rate of 10 liters / m (minute) or more to the gas head 1.
Is supplied to the inside of the chamber 7. The inert gas introduced into the chamber 7 flows in the same direction 13 as the direction in which the material gas flows, and is exhausted from the exhaust port 8.

After the film formation, the supply of the material gas is stopped, and 10 liter /
By continuously flowing for at least m (minutes), even if the powdered reaction by-product 9 is peeled off, it does not reach the gas head 1 and the wafer 3. As a result, contamination of the gas head 1 and the wafer 3 due to peeling of the reaction by-products 9 is prevented, and a decrease in product yield is prevented.

[0014]

As described above, according to the semiconductor device film forming method and the film forming apparatus of the present invention, even after film formation,
Since the inert gas is constantly flowed into the chamber, the gas head and the wafer are prevented from being contaminated due to the separation of the reaction by-products, and the yield of the product is prevented from being reduced.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram of a film forming apparatus according to an embodiment of the present invention.

FIG. 2 is a conceptual diagram of a conventional film forming apparatus.

[Explanation of symbols]

1 gas head, 3 wafers, 7 chambers, 10 material gas piping, 9 reaction by-products, 11 inert gas piping.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yasushi Sho 4-1-1 Mizuhara, Itami-shi, Hyogo Ryoden Semiconductor System Engineering Co., Ltd. (72) Inventor Hiroyuki Akai 4-1-1 Mizuhara, Itami-shi, Hyogo Ryoden Semiconductor System Engineering Co., Ltd. (72) Inventor Takashige Utatsu 4-1-1 Mizuhara, Itami-shi, Hyogo Ryoden Semiconductor System Engineering Co., Ltd. (72) Keita Shoji 4-1-1, Mizuhara, Itami-shi, Hyogo Hibishi Denki Semiconductor System Engineering Co., Ltd.

Claims (3)

[Claims] 1. A film forming apparatus for a semiconductor device for forming a film on a wafer, comprising: a chamber for arranging the wafer; a reaction gas supply unit for supplying a reaction gas into the chamber; A film forming apparatus for a semiconductor device, comprising: an inert gas supply unit that allows an active gas to pass therethrough. A step of disposing a wafer in the chamber; a step of supplying a reaction gas into the chamber to form a film on the wafer; and stopping the supply of the reaction gas after the film formation. Successively passing an inert gas into the chamber. 3. The method of claim 2, wherein said reaction gas comprises tetraethoxysilane.