JPH10272492A - High-temperature ultrapure water production apparatus and chemical liquid preparation apparatus equipped with the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-temp. ultrapure water producing apparatus which does not require a metal ion elution preventive treatment and a chemical liquid preparing apparatus equipped therewith. SOLUTION: This high-temp. ultrapure water producing apparatus consists of an evaporator 22 which yields the ultrapure water of a high temp. by treating the pretreated water obtd. by a pretreating system or the primary pure water obtd. by a primary pure water system 21, an ion exchange device 23 which removes the trace metal ions included in the ultrapure water obtd. by the evaporator 22, a produced water heat exchanger 24 which is made of titanium and subjects the high-temp. ultrapure water not yet removed of the trace metal ions obtd. by the evaporator 22 and the ordinary-temp. ultrapure water subjected to the removal of the trace metal ions treated in the ion exchange device 23 to a heat exchange and a cooling heat exchanger 25 which is made of SUS, cools the ultrapure water not removed of the trace metal ions cooled by the produced water heat exchanger 24 down to <=40 deg.C and supplies the water as the supply water to the ion exchange device 23. The ultrapure water subjected to the removal of the trace metal ions heated to the high temp. by the produced water heat exchanger 24 is made into electrolytic ion water by the chemical liquid preparing apparatus or is mixed with chemicals, and is used in the treating stage of a semiconductor production process.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultrapure water production apparatus used in the electronics industry such as the semiconductor industry, and more particularly, to a remarkable effect of improving rinsing efficiency and drying efficiency in wafer cleaning in a semiconductor manufacturing process. The present invention relates to a high-temperature ultrapure water production apparatus for obtaining the high-temperature ultrapure water shown.

[0002] The present invention also relates to an apparatus for preparing a chemical solution used in a process of processing semiconductors or other precision devices, particularly for cleaning semiconductor wafers, and more particularly to an apparatus for preparing and supplying a high-temperature chemical solution.

[0003] In this specification, the term "chemical solution" refers to a cleaning solution used in a semiconductor wafer cleaning process and a cleaning process for other precision devices, and also for suppressing a natural oxide film on a Si surface in a semiconductor processing process. It also includes the process liquid used in the process.

[0004]

2. Description of the Related Art In recent years, the electronics industry, such as the semiconductor industry, requires highly purified water. As the raw water of the purified water, industrial water, tap water, well water and the like are usually used, and in these raw waters, suspended substances, electrolytes, fine particles, microorganisms, organic substances, dissolved oxygen, and the like are required. Because it is contained in an amount that greatly exceeds the water quality standard value,
These impurities must be removed.

Conventionally, as an apparatus for obtaining ultrapure water by removing impurities as described above, those shown in FIGS. 3 and 4 are known.

[0006] An apparatus (71) of prior art example 1 shown in Fig. 3 comprises a primary pure water system (72) for treating raw water, and a primary pure water obtained by the primary pure water system (72) for treating ultrapure water. The obtained secondary pure water system (73). The primary pure water system (72) consists of a filtration device (74) and a reverse osmosis device (7
5), consisting of a degasser (76) and an ion exchanger (77),
The secondary pure water system (73) includes an ultraviolet sterilizer (78), a demineralizer (79), and an ultrafiltration (UF) device (80). According to this device (71), ionic components in the feed water are removed to a very small amount by a reverse osmosis device (75), an ion exchange device (77), and a demineralizer (79).
Ultrapure water of 8.0 MΩ · cm or more can be obtained. However, this device (71) has an insufficient performance of removing nonionic impurities such as silica and organic substances, it is difficult to sufficiently reduce dissolved oxygen in production water, and the device (71) has Because it is operated below, it is inevitable that bacteria generation and proliferation are inevitable and it is necessary to stop the device and sterilize it.
There are problems that the configuration of (71) becomes complicated and that operation monitoring becomes troublesome.

On the other hand, the apparatus of the prior art 2 shown in FIG. 4 completely removes nonionic impurities such as silica and organic colloids and dissolved oxygen which could not be sufficiently removed by the apparatus of the conventional example 1, and furthermore, It is intended to produce high-temperature ultrapure water at a temperature suitable for improving rinsing efficiency and drying efficiency.

[0008] The apparatus of the prior art 2 is a multiple effect evaporator for obtaining high-temperature ultrapure water by treating primary pure water obtained in a primary pure water system.
Ultrafiltration (UF) equipment mainly consisting of (I) and downstream (2)
It is provided with. The primary pure water system is the same as the primary pure water system in the device of Conventional Example 1. The primary pure water supplied to the evaporator (I) is led to the preheating pipe (5) that runs through each effect stage in the evaporator (I), and the steam generated in the evaporator tube (7) of each effect stage Is heated by receiving a part of the latent heat of condensation, and is heated to a predetermined temperature of about 100 ° C. by receiving a part of the latent heat of condensation of the heated steam in the preheating pipe (5) in the first effect stage. Into the water reservoir (13). The supply water entering the sump (13) is
(7) is mixed with the remaining concentrated liquid that has generated steam, and most of the mixed liquid is formed into a thin film through the circulation pump (6) in the evaporating pipe (7) arranged above the first effect stage. It flows down and receives most of the latent heat of condensation of the heated steam from the outer surface of the tube to evaporate at a temperature of about 100 ° C. to generate steam. The concentrated liquid having generated the steam flows down to the water reservoir (13), mixes with the supply water as described above, and most of the water is sent to the upper water chamber (15) via the circulation pump (6). The remaining liquid mixture enters the second effect stage reservoir through the communication port (14), where it is mixed with the concentrated liquid also flowing down from the evaporating tube, most of which is passed through the second effect stage circulation pump. It is sent to the water chamber above the second utility stage.

[0009] The water vapor generated in the evaporator tube of the first effect stage is
After passing through the mist separator (16), it enters the outside of the evaporation tube in the second effect stage. The mist accompanying the water vapor is removed by the mist separator (16) and becomes extremely small. Most of the water vapor condenses on the outer surface of the evaporator tube, the condensate enters a condensate collector (not shown) in the second effect stage, and the remaining water vapor condenses on the outer surface of the preheater tube of the second effect stage. Is mixed with the condensate from the evaporating tube in the condensate collection part, and all of it enters the condensate collection part in the third effect stage.

Thus, the above process is repeated at each effect stage.

The water vapor generated by evaporation in the final effect stage (n-th effect stage) passes through a mist separator and condenses on the outer surface of the condenser tube (12) of the condenser (1) close to the final effect stage. Then, the condensate enters the water reservoir (11) at the bottom of the condenser. Also, all the condensate condensed in each effect stage also passes through the condensate collection part and enters the water reservoir (11). The condensate collected in the water reservoir (11) is extracted by an ultrapure water pump (10) and passed through an ultrafiltration device (2) for removing fine particles.

The condensate extracted by the ultrapure water pump (10) and having the fine particles removed by the ultrafiltration membrane (2) has a resistivity very close to the resistivity of theoretical pure water of 18.0 MΩ · cm (high temperature). Of pure water cooled to 25 ° C., and in this specification,
All the resistivity values are measured at 25 ° C.) or higher, and the ultrapure water has a very low TOC value and dissolved oxygen concentration and a high temperature. High-temperature ultrapure water having a temperature of about 70 to 80 ° C. is particularly preferable as the high-temperature ultrapure water which has a remarkable effect on the improvement of the rinsing efficiency and the drying efficiency in the wafer cleaning in the semiconductor manufacturing process.

Further, in the wafer cleaning in the semiconductor manufacturing process, as shown in FIG. 5, many chemicals are used at a high temperature. When a certain number of wafers are processed, the chemicals are extracted from the cleaning tank, and the chemicals are replaced by a batch method in which a predetermined amount of a new chemical is supplied to an empty cleaning tank.

In the conventional adjustment and supply of a chemical solution, ultrapure water and an undiluted chemical solution produced by the apparatus of the conventional example 1 are respectively supplied directly to a cleaning tank by a predetermined amount, and heated by an electric heater to a predetermined temperature. Alternatively, a predetermined amount of the ultrapure water and the undiluted chemical solution produced by the apparatus of Conventional Example 1 is supplied to the chemical solution adjusting tank, and preheated with an electric heater so as to reach a predetermined temperature, and adjusted in advance. It is a method of supplying from a chemical solution adjusting tank to a washing tank. As a supply method of the automatic supply device for a drug solution, there are a pumping method using nitrogen gas and a method using a pump.

[0015]

In the high-temperature ultrapure water apparatus of the prior art 2 described above, in order to improve the heat transfer coefficient for heat exchange, the constituent materials of the apparatus such as the evaporating tube are SUS316 and SUS30.
4 and the like. In order to prevent metal ions contained in these metal materials from being eluted into the condensate, the wetted part is electrolytically polished and treated in a high-temperature furnace to form an oxide film on the surface of the constituent materials. Is being done. The device of the conventional example 2 requires such processing, so that the process of manufacturing the device is complicated, and there is a problem that the device manufacturing cost is high.

In the high-temperature ultrapure water apparatus of Conventional Example 2, when the above-mentioned elution prevention treatment was not performed, it was confirmed that the obtained high-temperature ultrapure water contained metal ions of about 50 ppt Fe and 10 ppt Ni. I have. In a semiconductor manufacturing process, metal ions are deposited on a wafer surface at 1 × 10 ^{10 at.}
It is believed that ms / cm ² or more is not acceptable. The relationship between the concentration of trace metal ions in pure water and the amount of contamination on the wafer surface without taking such measures to remove trace metal ions was examined. The results are shown in Table 1 (the measuring method will be described later).

[0017]

[Table 1] As shown in Table 1, when trace metal ions were not removed, 49
When pure water containing Fe ions is used for cleaning a wafer in a semiconductor manufacturing process, 1.57 to 8.64 × 10 ¹⁰ atoms / c
It can be seen that there is a problem that m ² Fe ions adhere and contaminate the surface, and the higher the temperature, the greater the amount of contamination.

High-temperature ultrapure water with low dissolved oxygen concentration not only flushes out the chemical solution, but also has the effect of suppressing or etching natural oxide films on the Si surface and removing metal impurities on the natural oxide film surface. I knew it was effective. However, in the high-temperature ultrapure water manufacturing apparatus of the conventional example 2, when the metal ion elution prevention treatment is not performed, the produced high-temperature ultrapure water contains a trace amount of metal ions that can cause problems by contaminating the wafer surface. Therefore, there is a problem in applying it to the most advanced actual device manufacturing process.

In the wafer cleaning in the semiconductor manufacturing process, the following problems arise because the chemical solution is exchanged in a batch system.

The chemical liquid exchange time of the old chemical liquid withdrawal time, the new chemical liquid supply time, and the temperature adjustment time, and it is necessary to prevent the wafer from remaining in the process in the cleaning device before the chemical liquid exchange. It takes time to send out from the apparatus, and the washing is stopped during this total time, thereby reducing production efficiency.

Although the cleaning property of the wafer immediately after the replacement is good, the cleaning property of the wafer immediately before the replacement is inferior to the cleaning property immediately after the replacement, and the finished product and the product performance vary.

The object of the present invention is to reduce the amount of silica, organic substances and dissolved oxygen, eliminate the need for sterilization of bacteria, to simplify the construction of the apparatus, to facilitate operation monitoring, maintenance and management, as compared with the apparatus of the prior art 1. In addition, the apparatus of the prior art 2 eliminates the need for metal ion elution prevention processing such as electrolytic combined polishing and high-temperature furnace processing, which simplifies the manufacturing process of the apparatus and reduces the manufacturing cost of the apparatus. It is an object of the present invention to provide an apparatus and method for producing high-temperature ultrapure water.

Another object of the present invention is to provide an apparatus and method for preparing a chemical solution, in which a state of a chemical solution is kept constant in wafer cleaning in a semiconductor manufacturing process, and variations in products due to changes in the state of the chemical solution are reduced. Another object of the present invention is to provide an apparatus and a method for preparing a chemical solution, which can use ultrapure water having a high dissolved oxygen concentration at a high temperature as a process liquid.

[0024]

The apparatus for producing high-temperature ultrapure water according to the present invention is characterized in that raw water is subjected to coagulation filtration and deaeration treatment of pretreated water, or primary pure water obtained in a primary pure water system, and is treated with high-temperature water. And an ion exchanger for removing trace metal ions contained in the ultrapure water obtained by the evaporator.

The primary pure water system of the device of the present invention may be the same as the primary pure water system in the above-mentioned conventional example 1, and is constituted by a filtration device, a reverse osmosis device, a deaerator and an ion exchange device. In the apparatus of the present invention, depending on the quality of raw water, a pretreatment system including a coagulation filtration device and a deaeration device may be used instead of the primary pure water system.

The evaporator may be the same as that in the conventional example 2 described above, and the pretreated water obtained in the pretreatment system,
Alternatively, a multi-effect evaporator (I) for treating primary pure water obtained in a primary pure water system to obtain high-temperature ultrapure water is mainly used, and an ultrafiltration (UF) device (2) is provided in the subsequent stream as necessary. It is provided with. The evaporator is operated at a high temperature of the order of 100 ° C.
However, the metal material constituting the evaporator may not be subjected to the metal ion elution prevention treatment.

It is preferable that the ion exchange apparatus is filled with a mixed bed type ion exchange resin or a strongly acidic cation exchange resin (cation exchange resin). As these mixed bed type ion exchange resins and strongly acidic cation exchange resins, those having heat resistance are preferable. The mixed bed type ion exchange resin is obtained by mixing and filling a strongly acidic cation exchange resin and a strongly basic anion exchange resin at a required exchange capacity ratio. The high-temperature ultrapure water obtained in the evaporator is supplied to these ion-exchange resins as they are at a high temperature or cooled to 40 ° C. or less by a production water heat exchanger and a cooling heat exchanger. Examples of the mixed-bed ion exchange resin include a mixture obtained by mixing and filling a strongly acidic cation exchange resin and a strongly basic anion exchange resin at an exchange capacity ratio of 1: 1 such as an ion exchange resin SMT100 manufactured by Mitsubishi Chemical Corporation. An example of the strong acidic cation exchange resin is an ion exchange resin SKT10 manufactured by Mitsubishi Chemical.

The ion exchange apparatus may be an ion exchange membrane, an ion exchange fiber, or an ion exchange membrane and an ion exchange fiber filled with ion exchange fibers instead of the ion exchange resin. As the ion exchange membrane and the ion exchange fiber, those having heat resistance are preferable.

Further, as the ion exchange device, a device provided with a continuous water passing type electrodeionization device may be used. FIGS. 6 to 8 show examples of the continuous water flow type electrodeionization apparatus. FIG.
The continuous water passing type electrodeionization device (50) shown in (5) is a cation exchange resin (55) in the water channel to be treated (52) formed by the cation exchange membrane (53) and the anion exchange membrane (54). And an anion exchange resin (56), an anion exchange membrane (57) outside the cation exchange membrane (53), and a cation exchange membrane (58) outside the anion exchange membrane (54). A concentrated water channel (59) provided with a concentrated water channel (59) is formed, and continuous ion exchange treatment is enabled by applying an electric field to the outside of the concentrated water channel (59). Is exemplified. The continuous water passing type electrodeionization device (51) shown in FIG. 7 is different from the continuous water passing type electrodeionization device (50) shown in FIG. 6 in that all the water channels (52) and (59) have ion exchange resins (55). (56), the central channel is a concentrated water channel (59), and the outer channel is a treated channel.
(52), for example, a new CDI manufactured by Kurita Water Industries Ltd. Further, the continuous water passing type electrodeionization device (61) shown in FIG. 8 includes a cation exchange membrane (63) and an anion exchange membrane.
The water channel (62) to be treated formed in (64) is filled with cation exchange fibers (65) and anion exchange fibers (66), for example, New Codes manufactured by Nippon Rensui Co., Ltd. Is done. As the ion exchanger of the continuous water passing type electrodeionization apparatus, an ion exchange resin and an ion exchange fiber each having heat resistance are preferable.

According to the apparatus for producing high-temperature ultrapure water of the present invention, first, raw water (industrial water or city water) is treated by a pretreatment system or a primary pure water system, and suspended substances, electrolytic substances, fine particles, microorganisms and the like in the raw water are treated. Etc. are removed. However, the treatment of the pretreatment system or the primary pure water system alone is insufficient in the performance of removing nonionic impurities such as silica and organic substances and the removal of dissolved oxygen. Water is supplied to the evaporator for treatment. Since the process of producing pure water in the evaporator involves a phase change and a bleeding operation, non-ionic impurities such as silica and organic substances, and dissolved gases such as dissolved oxygen are also separated and removed until they become extremely small.
The evaporator is not subjected to metal ion elution prevention treatment such as electrolytic combined polishing of the liquid contact part and forced oxide film treatment in a high-temperature furnace. Although the ions are included, the trace metal ions are removed by the mixed bed type ion exchange resin or the strongly acidic cation exchange resin of the ion exchange device. The high-temperature ultrapure water thus obtained is used, for example, for cleaning a wafer.

The apparatus for producing high-temperature ultrapure water of the present invention is characterized in that ultrapure water of high temperature with no trace metal ions removed by the evaporator and ultrapure water of normal temperature with trace metal ions removed by the ion exchanger are removed. By performing heat exchange, the high-temperature trace metal ion non-removed ultrapure water is cooled before being supplied to the ion exchanger, and a production water heat exchanger for heating the room temperature trace metal ion-removed ultrapure water is further provided. Preferably, it is provided.

Further, the high-temperature ultrapure water producing apparatus of the present invention cools ultrapure water from which trace metal ions have not been removed cooled by the production water heat exchanger to 40 ° C. or less to supply water to the ion exchange apparatus. It is preferable to further include a cooling heat exchanger.

In the above heat exchanger, the evaporator, the production water heat exchanger, the cooling heat exchanger, and the ion exchanger are arranged in this order from the upstream side. The heat exchanger is a PFA or PVDF used in a conventional heat exchanger of ultrapure water.
It may be made of a fluororesin with little elution such as.

When a metal material is used in the production water heat exchanger, the production water heat exchanger is used in a high temperature region under severe conditions for elution of the metal material into pure water, and a trace metal ion is removed. Heats room-temperature ultrapure water, so it is made of titanium, which is the least eluted metal, and is made of oxidation-passive stainless steel that has been subjected to special heat treatment after electrolytic polishing or has been subjected to special heat treatment after electrolytic combined polishing. Is preferred. GOLD manufactured by Shinko Pantech Co., Ltd. is an oxidation passivated stainless steel that has been subjected to special heat treatment after electrolytic polishing.
EP WHITE is exemplified.

When using a metal material for the cooling heat exchanger,
Since the cooling heat exchanger is used in a medium temperature range under conditions where the elution of metallic materials into pure water is not so severe, it cools ultrapure water before being passed through the ion exchange device. It is preferable to use a metal material having the same or lower elution amount to pure water than stainless steel. Examples of the metal material of the cooling heat exchanger include, for example, stainless steel, titanium, oxidation passivated stainless steel subjected to special heat treatment after electrolytic polishing, and oxide passivated stainless steel subjected to special heat treatment after electrolytic composite polishing.

The high-temperature ultrapure water obtained by the above-mentioned high-temperature ultrapure water production apparatus is used as it is at the time of rinsing the ultrapure water in the processing steps of the semiconductor production process shown in FIG. the drug solution preparing apparatus of the present invention, or a high-temperature ultra-pure water and the electrolytic ion water, NH ₄ OH to a high temperature ultra-pure _{water, H 2 O 2, HCl,} HF, H 2 SO 4, H
By mixing a chemical such as NO ₃ (the term “chemical” includes not only a raw chemical solution but also a material gas and an oxidizing gas), a chemical solution used in a process other than rinsing in a processing step of a semiconductor manufacturing process. You can also get

The chemical solution preparation device of the present invention (claim 10)
High-temperature ultrapure water production apparatus of the present invention, an electric field ion water production apparatus for decomposing high-temperature ultrapure water obtained by the high-temperature ultrapure water production apparatus into electrolytic anode water and electrolytic cathode water, electrolytic anode water and electrolytic cathode A supply device for directly supplying water to a chemical solution tank of a processing device of a semiconductor or other precision device. By passing the high-temperature ultrapure water through the electrolytic ionic water producing apparatus at a high temperature, high-temperature electrolytic ionic water (electrolytic anode water and electrolytic cathode water) can be obtained. Electrolytic anode water and electrolytic cathode water are supplied to different chemical tanks. As the electrolytic ionic water producing apparatus, an electrolytic ionic water producing apparatus having a three-tank type electrolytic cell structure manufactured by Organo Corporation is exemplified. The ion exchange membrane and the ion exchange resin used in the three-tank electrolytic cell preferably have heat resistance.

According to the present invention (claim 11),
The high-temperature ultrapure water production apparatus of the present invention, and the high-temperature ultrapure water obtained by the high-temperature ultrapure water production apparatus and the agent mixed with the high-temperature ultrapure water are directly supplied to a chemical solution tank of a semiconductor or other precision device processing apparatus. It is provided with a chemical liquid supply adjusting device for adjusting the supply of the chemical liquid in the chemical liquid tank to a desired temperature or concentration (see FIG. 12). As a configuration to make the chemical solution in the chemical tank have a desired concentration,
For example, a high-temperature ultrapure water fixed-quantity supply device and an automatic stock solution supply device are provided. The high-temperature ultrapure water quantitative supply device includes an indicating controller, a flow meter with an output, and an automatic control valve.
Further, the automatic chemical liquid feeder is provided with a chemical liquid tank, an indicator controller, a flow meter with output, an automatic control valve, and the like. For example, a heat exchanger is further provided as a configuration for adjusting the temperature of the chemical in the chemical bath to a desired temperature.

The chemical solution preparation device of the present invention (claim 12) is
The apparatus comprises a high-temperature ultrapure water production apparatus according to the present invention and a mixing apparatus for mixing a drug into the high-temperature ultrapure water obtained by the high-temperature ultrapure water production apparatus. As the mixing device, for example, a mixer is used, and as a configuration for making the chemical solution in the mixer have a desired concentration, for example, the above-described high-temperature ultrapure water constant-quantity supply device and the automatic chemical solution supply device are provided (FIG. 10). And FIG. 11). For example, a heat exchanger is provided between the chemical solution tank and the mixer as a configuration for adjusting the temperature of the chemical solution in the chemical solution tank to a desired temperature (see FIG. 10). The mixer may be provided near the high-temperature ultrapure water production apparatus, or may be provided near the chemical solution tank. In addition, a gas supply device (not shown) is provided in place of the automatic chemical stock solution supply device, and HCl, NH ₃ , and the like are added to the high-temperature ultrapure water obtained by the high-temperature ultrapure water production device.
Material gases such as HF, NH ₄ F, SOx, NOx, O ₃ ,
A chemical solution may be obtained by mixing an oxidizing gas such as O ₂ and oxygen radicals.

The method of supplying the chemical solution obtained by the chemical solution preparation device to the chemical solution tank includes a method of supplying a chemical solution having a desired concentration and a desired temperature to the chemical solution tank in a batch method.
There is a method in which a chemical solution having a desired concentration and a desired temperature is continuously supplied in a predetermined amount to a chemical solution tank, and an amount equivalent to the supply amount is extracted from the chemical solution tank.

[0041]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the high-temperature ultrapure water production apparatus according to the present invention will be described below with reference to FIGS. However,
The present invention is not limited to these.

FIG. 1 shows a first embodiment of a high-temperature ultrapure water producing apparatus according to the present invention. As shown in the figure, this high-temperature ultrapure water production system is composed of a primary pure water system (21), which obtains primary pure water by treating industrial water or city water (tap water) as raw water, and a primary pure water system (21). A multiple-effect evaporator (22) that processes the obtained primary pure water to obtain high-temperature ultrapure water, and an ion exchange device that removes trace metal ions contained in the high-temperature ultrapure water obtained by the evaporator (22) (23), a production water heat exchanger (24) and a cooling heat exchanger (25) provided between the evaporator (22) and the ion exchanger (23).
And

The primary pure water system (21) is composed of a filtration device, a reverse osmosis device, a deaerator and an ion exchange device (see FIG. 3), and is supplied with industrial water or city water supplied at normal temperature (for example, 25 ° C.). Water (tap water) is treated as raw water to obtain room temperature primary pure water, which is supplied to an evaporator (22). In the primary pure water system (21), the suspended substance is mainly removed by a filtration device, the electrolytic (ion) material is removed by a reverse osmosis device and an ion exchange device, and the dissolved oxygen is mainly removed by a deaeration device, and the resistivity is 17.5 MΩ · cm. ,
Trace metal ion 0.1ppb (100ppt), TOC
30 ppb, silica (SiO ₂ ) 3 ppb, dissolved oxygen 5
Pure water of about 0 ppb is obtained.

The ion exchange unit (23) is filled with a strongly acidic cation exchange resin (ion exchange resin SKT10 manufactured by Mitsubishi Chemical Corporation).

The evaporator (22) has the same structure as that of the conventional example 2 shown in FIG. 4, and has a multiple effect of treating primary pure water obtained in a primary pure water system to obtain high-temperature ultrapure water. Mainly evaporator. However, the metal material constituting the evaporator has not been subjected to the metal ion elution prevention treatment. By supplying the primary pure water to the evaporator (22), high-temperature ultrapure water of about 75 ° C. is obtained by the same process as in the conventional example 2. As shown in Table 2, the obtained high-temperature ultrapure water is extremely high-purity ultrapure water except that it contains a small amount of metal ions (Fe ions and Ni ions) of the metal material constituting the evaporator.

[0046]

[Table 2] The high-temperature ultrapure water obtained in the evaporator (22) is supplied to the production water heat exchanger (2
4) sent to the high temperature fluid side inlet and cooled here to about 40 ° C., and then sent to the high temperature fluid side inlet of the cooling heat exchanger (25) and further cooled to about 35 ° C.
It is passed through the ion exchange device (23). Then, trace metal ions (Fe ions and Ni ions) contained in the high-temperature ultrapure water obtained in the evaporator (22) are removed by the ion exchange device (23). Ultrapure water that has passed through the ion exchange device (23)
It becomes ultrapure water at room temperature with a resistivity of 18.0 MΩ · cm or more and a trace metal ion of 5 ppt or less at a temperature of 35 ° C. This room-temperature ultrapure water is sent to the low-temperature fluid side inlet of the production water heat exchanger (24),
Here, the heat of the high-temperature ultrapure water at 75 ° C. obtained by the evaporator (22) is recovered and converted into high-temperature ultrapure water having a resistivity of 18.0 MΩ · cm or more and a trace metal ion of 5 ppt or less at a temperature of 70 ° C. Exit from the low temperature fluid side outlet. This high-temperature ultrapure water is sent to a use point as high-temperature ultrapure water for wafer cleaning.

The low-temperature fluid side of the cooling heat exchanger (25) is supplied with, for example, cooling water from a cooling tower. As the cooling water, cold water from a chiller device may be used. The ultrapure water from which trace metal ions have not been removed and which has been cooled to a medium temperature of 30 to 45 ° C. in the production water heat exchanger (24) is further cooled by the cooling heat exchanger (25). When the ion exchange resin to be filled in the ion exchange device (23) does not have heat resistance, the temperature of the ultrapure water without removing trace metal ions before passing through the ion exchange device (23) is preferably 40 ° C or less. However, by installing a cooling heat exchanger (25), this temperature is guaranteed. If the temperature of the ultrapure water from which the trace metal ions have not been removed after passing through the production water heat exchanger (24) is equal to or lower than the heat resistant temperature of the ion exchange resin, the cooling heat exchanger (25) may not be provided.

In the above, the production water heat exchanger (24) is made of titanium, and the cooling heat exchanger (25) is made of SUS316.

The ultrapure water passed through the cooling heat exchanger (25) is cooled by the production water heat exchanger (24) to become a medium temperature region under conditions that are not so severe for elution of metallic materials. Therefore, even if the cooling heat exchanger (25) is made of SUS316, trace metal ions hardly elute. Also, even if trace amounts of metal ions elute from the cooling heat exchanger (25) into ultrapure water, the ultrapure water is
, So that the eluting metal ions are not a problem. Therefore, as the metal material of the cooling heat exchanger (25), the elution amount to pure water is equal to or less than that of stainless steel, for example, SUS316, SUS316L, SUS3
04, SUS304L, and other stainless steels having the same elution characteristics as those of stainless steel, titanium, oxidation passivated stainless steel subjected to special heat treatment after electrolytic polishing, or oxidation passivated stainless steel subjected to special heat treatment after electrolytic composite polishing.

On the other hand, the production water heat exchanger (24) is used in a high temperature region under severe conditions for elution of metallic materials, and removes trace metal ions passed through the production water heat exchanger (24). The used ultrapure water is used as it is as washing water. Therefore, by making the production water heat exchanger (24) a titanium heat exchanger with almost no metal ion elution, deterioration of the quality of the finally obtained high-temperature ultrapure water is prevented. As the metal material of the production water heat exchanger (24), in addition to titanium, oxidized passivated stainless steel subjected to special heat treatment after electrolytic polishing or oxidized passivated stainless steel subjected to special heat treatment after electrolytic combined polishing, and the like can be considered.

The water quality at the outlet (35 ° C.) of the ion exchanger (23) and the outlet (70 ° C.) of the titanium-made production water heat exchanger (24) downstream of the high-temperature ultrapure water production apparatus of the present invention was analyzed.
Table 3 shows the results.

[0052]

[Table 3] Using ultrapure water obtained by the high temperature ultrapure water production apparatus of the present invention, a pure water immersion test and a contamination confirmation test simulating a wet cleaning process performed in a semiconductor production process are performed, and a wafer surface analysis is performed. Was done. Table 4 shows the results.

[0053]

[Table 4] From Table 4, it can be seen that even at a high temperature, which is more severe against metal ion contamination than at room temperature, Fe ions are 1 × 10 ¹⁰ atoms / cm ² or less, which is considered to be unacceptable in the semiconductor manufacturing process. Has become, therefore, high-temperature ultrapure water produced by the high-temperature ultrapure water production apparatus of the present invention,
It can be seen that it is suitable for wafer cleaning in a semiconductor manufacturing process. It can also be seen that there is no problem if a SUS heat exchanger is used for the cooling heat exchanger (25) and a titanium heat exchanger is used for the production water heat exchanger (24).

In Table 4 and Table 1 described above, the Fe concentration in pure water was measured using SPQ-8 manufactured by Seiko Denshi Kogyo.
000 (high sensitivity specification) was performed by inductively coupled plasma mass spectrometry, and the Fe analysis of the wafer surface was performed by total reflection X-ray fluorescence analysis using TREX610T manufactured by Technos Co., Ltd.

For the measurement of the pure water immersion test, a wafer which was immersed in a pure water overflow water tank at a predetermined temperature (normal temperature and high temperature) and dried by a spin dryer was used as a test piece, and a normal temperature rinse of the RCA test was performed. For the measurement under the conditions, the wafer was used as a test piece and H ₂ SO ₄ /
Immersed in the H ₂ O ₂ solution, immersed in the overflow water bath at room temperature pure _{water, NH4 OH / H 2 O 2} / H 2 O solution dipping, dipped into the overflow tank cold deionized water, HCl / H ₂ O
After being immersed in a ₂ / H ₂ O solution, further immersed in an overflow bath of room temperature pure water, and dried with a spin drier. For the measurement under the high-temperature rinsing condition of the RCA test, the same operation as the measurement under the normal-temperature rinsing condition was repeated, except that the high-temperature pure water was used instead of the normal-temperature pure water in the RCA test. For measurement under the normal temperature rinsing condition of the RCA + HF test, a wafer treated as the test piece under the same conditions as the normal temperature rinsing condition of RCA is further immersed in a dilute hydrofluoric acid solution, and then immersed in an overflow water bath of normal temperature pure water. , Using a dried with a spin dryer,
In the measurement under the high-temperature rinsing condition of the RCA + HF test, a wafer treated under the same conditions as the high-temperature rinsing condition of the RCA is further immersed in a dilute hydrofluoric acid solution as a test piece.
After being immersed in an overflow water bath of high-temperature pure water, a product dried by a spin dryer was used.

FIG. 2 shows a second embodiment of the apparatus for producing high-temperature ultrapure water according to the present invention. This high-temperature ultrapure water production system is the first
The difference from the embodiment is that the two heat exchangers (24) and (25) are both omitted, and accordingly, the mixed-bed ion exchange resin or the mixed bed ion exchange resin filled in the ion exchange device (26) is used. Strongly acidic cation exchange resins are said to have heat resistance. According to this high-temperature ultrapure water production apparatus, the high-temperature ultrapure water at 75 ° C. obtained by the evaporator (22) is kept at a high temperature without using the heat-resistant mixed-bed ion exchange resin or the heat-resistant strong acid of the ion exchange apparatus (26). Through a cation exchange resin. As a result, the metal ions in the high-temperature ultrapure water are removed to a very small amount, and the high-temperature ultrapure water at 75 ° C. equivalent to the analysis result of the high-temperature ultrapure water at the outlet of the production water heat exchanger shown in Table 3 is obtained. Can be

The high-temperature ultrapure water produced by the apparatus for producing high-temperature ultrapure water of the present invention has a low dissolved oxygen concentration and also removes trace metal ions. Also, it can be used as a chemical solution for the purpose of suppressing or etching a natural oxide film on the Si surface or removing metal impurities on the surface of the natural oxide film. In this case, the high-temperature ultrapure water produced by the high-temperature ultrapure water production apparatus of the present invention is directly supplied to the process apparatus.

Next, an embodiment of a chemical liquid preparation apparatus in the case where high-temperature ultrapure water produced by the high-temperature ultrapure water production apparatus of the present invention is applied as a chemical will be described.

FIG. 9 shows a first embodiment of the chemical liquid preparation apparatus of the present invention. As shown in the figure, this chemical solution preparation apparatus is a high-temperature ultrapure water production apparatus (31) of the present invention and a high-temperature ultrapure water produced by a high-temperature ultrapure water production apparatus (31). Ionic water production equipment that produces high temperature electrolytic ionic water
(32). An electrolytic ionized water production device (32) is provided between an anode (43) and a cathode (44), an opposite ion exchange membrane (45) and an ion exchange resin filled between them.
(46) is sandwiched, and the high-temperature ultrapure water produced by the high-temperature ultrapure water production apparatus (31) of the present invention is passed through the electrolytic ionic water production apparatus (32) at a high temperature. Thus, high-temperature electrolytic ion water (electrolytic anode water and electrolytic cathode water) is obtained. Then, the electrolytic anode water is supplied to a chemical tank (33) with a first circulation pump (36), and the electrolytic cathode water is supplied to a chemical tank (34) with a second circulation pump (36). Is supplied to the ultrapure water rinsing tank (35).

FIG. 10 shows a second embodiment of the chemical solution preparation apparatus of the present invention. As shown in the figure, this chemical solution preparation apparatus is a high-temperature ultrapure water production apparatus (31) of the present invention and a high-temperature ultrapure water produced by the high-temperature ultrapure water production apparatus (31) at a constant flow rate. A high-temperature ultrapure water quantitative supply device (37), an automatic undiluted chemical solution supply device (38) for supplying the undiluted chemical solution at a constant flow rate, a mixer (39) for mixing the high-temperature ultrapure water and the undiluted chemical solution, and And a temperature-regulating heat exchanger (40) for raising or cooling the chemical solution having the above concentration to a desired temperature.

The high-temperature ultrapure water and the undiluted chemical solution produced by the high-temperature ultrapure water production unit (31) are respectively subjected to the desired concentration by the high-temperature ultrapure water quantitative supply unit (37) and the automatic undiluted chemical liquid supply unit (38). The mixture is supplied to the upstream side of the mixer (39) at such a flow rate as to be obtained, and is completely mixed by the mixer (39). As the mixer (39), a line mixer which does not require a special supply device for a chemical solution adjusted to a desired concentration is preferable, but a mixer provided with a stirrer and a pump in a liquid storage tank may be used. As a method of supplying the chemical solution from the liquid storage tank, a pressure feeding method using nitrogen gas may be used. The chemical solution adjusted to a desired concentration is adjusted to a desired temperature by a temperature adjusting heat exchanger (40) provided downstream of the mixer (39). When the chemical solution adjusted to the desired concentration is lower than the desired temperature, the temperature is raised in the temperature adjusting heat exchanger (40), and when the chemical solution adjusted to the desired concentration is higher than the desired temperature, the temperature adjusting heat exchanger is used. Cooled in the exchanger (40). As a method for raising the temperature, there are other methods such as electric heating or steam heating. As another cooling method, there is a method using cold water of a cooling tower or a chiller device. The chemical solution adjusted to a desired concentration and a desired temperature is continuously supplied at a constant flow rate to a chemical solution tank (42) with a circulation pump (36) of the cleaning device (41). The high-temperature ultrapure water is supplied to an ultrapure water rinsing tank (35). The chemical liquid in the chemical liquid tank (42) is continuously extracted from the discharge side of the circulation pump (36) in the same amount as the supply amount. The supply amount of the chemical solution to the chemical solution tank (42) is determined based on the relationship between the processing amount of the wafer or the product yield with respect to the concentration of the contaminant in the chemical solution tank (42) corresponding to the wafer processing amount.

FIG. 11 shows a third embodiment of the chemical liquid preparation apparatus according to the present invention. The difference between this chemical solution preparation apparatus and the second embodiment is that, as shown in FIG.
Is omitted. According to this apparatus, the high-temperature ultrapure water and the undiluted chemical solution produced by the high-temperature ultrapure water production unit (31) are respectively desired by the high-temperature ultrapure water quantitative supply unit (37) and the automatic undiluted chemical solution supply unit (38). The mixture is supplied to the upstream of the mixer (39) at a flow rate such that the concentration becomes as described above, and is thoroughly mixed by the mixer (39) to reach a desired temperature. Components having the same configuration as the second embodiment are denoted by the same reference numerals, and description thereof is omitted.

FIG. 12 shows a fourth embodiment of the chemical solution preparation apparatus according to the present invention. As shown in the figure, the chemical solution preparation device is not provided with a mixer (39), and the high temperature ultrapure water and the drug solution stock solution produced by the high temperature ultrapure water production device (31) of the present invention are used. A chemical solution tank (42) with a circulation pump (36) of a cleaning device (41) at a flow rate such that the desired concentration is obtained by a high-temperature ultrapure water fixed-quantity supply device (37) and an automatic chemical solution supply device (38), respectively. Are supplied directly to

In the chemical liquid preparation apparatus of the present invention, the chemical mixed with the high-temperature ultrapure water is not limited to the chemical liquid stock solution. The raw material gas and the oxidizing gas stored and supplied in the state of
The high-temperature ultrapure water produced in 1) may be directly blown and mixed in a ratio of a desired concentration in a gaseous state, and supplied at a desired temperature.

[0065]

According to the high-temperature ultrapure water production apparatus of the present invention,
Non-ionic impurities such as silica and organic substances and dissolved oxygen contained in the pretreatment water treated in the pretreatment system or the primary pure water treated in the primary pure water system are removed by the evaporator. Further, since the evaporator is operated at a high temperature of about 100 ° C., there is no viable bacteria and sterilization of bacteria is not required. If the evaporator has not been subjected to metal ion elution prevention treatment, high-temperature ultrapure water obtained in the evaporator will contain a trace amount of metal ions, but this trace amount of metal ions,
It is removed by passing through an ion exchange device, and high-temperature ultrapure water at a level that does not cause any problem even when used for cleaning a wafer in a semiconductor manufacturing process is obtained.

The high-temperature ultrapure water production apparatus of the present invention comprises an ultraviolet sterilizer, a demineralizer and an ultrafiltration apparatus.
Compared with the device of the first conventional example provided with a secondary pure water system, the configuration of the device is simple, and operation monitoring and maintenance are easy. Moreover,
Since the metal ion elution prevention treatment, that is, the electrolytic combined polishing and the forced oxide film treatment in the high-temperature furnace do not need to be performed on the evaporator, the manufacturing process of the device is simplified as compared with the device of the conventional example 2, and the manufacturing cost is reduced. Can be reduced.

Further, the pure water obtained by the evaporator contains a very small amount of metal (Fe, Ni) ions, for example, Fe 50 ppt,
Except for containing about 10 ppt of Ni, it has water quality equal to or higher than that of ultrapure water used for cleaning wafers in the semiconductor manufacturing process. It is possible to produce high-temperature ultrapure water at a level that does not cause any problem even when used for cleaning a wafer in a semiconductor manufacturing process, without prolonging the life of the exchange resin and increasing running costs.

A production water heat exchanger for heat-exchanging high-temperature trace metal ion-free ultrapure water obtained by the evaporator and ultra-temperature-free trace metal ion-free ultrapure water treated by the ion exchanger is further provided. However, the mixed-bed ion exchange resin and the strongly acidic cation exchange resin that are filled in the ion exchange device may not have much heat resistance, and heat recovery may be performed by a production water heat exchanger. As a result, heat loss can be suppressed.

Further, there is further provided a cooling heat exchanger which cools ultrapure water from which trace metal ions have not been removed cooled by the production water heat exchanger to 40 ° C. or lower to supply water to the ion exchange apparatus. In addition, ultrapure water before entering the ion exchange device can be reliably cooled to a predetermined temperature or lower.

Further, in the case where the ion exchange device is a continuous water passing type electrodeionization device, the device operation for regeneration of the ion exchange resin does not need to be stopped, and complete continuous operation is possible.

The production water heat exchanger is made of titanium, oxidation-passive stainless steel subjected to electrolytic polishing and special heat treatment, or oxidation-passive stainless steel subjected to electrolytic combined polishing and special heat treatment, and the cooling heat exchanger is made of stainless steel. When very small amounts of metal ions are eluted from the stainless steel heat exchanger, the trace metal ions are removed by the ion exchange device, and then ultrapure water from which trace metal ions have been removed is produced with little elution Since the water is heated by the water heat exchanger, the quality of the finally obtained high-temperature ultrapure water does not deteriorate. In addition, heat exchangers using metal materials have a higher heat transfer coefficient than conventional heat exchangers made of fluororesins such as PFA and PVDF, which are used for heat exchangers of ultrapure water. Because it is easy, it also has the advantage of being compact and inexpensive.

A high-temperature ultrapure water producing apparatus, an electric field ion water producing apparatus for decomposing high-temperature ultrapure water obtained by the high-temperature ultrapure water producing apparatus into an electrolytic anode water and an electrolytic cathode water, an electrolytic anode water and an electrolytic cathode According to a chemical solution preparation device having a supply device for directly supplying water to a chemical solution tank of a processing device of a semiconductor or other precision device, high-temperature electrolytic ionic water that can be easily cleaned compared to room temperature can be obtained. The time can be shortened and the fee for using the chemical can be reduced.

Further, as a method for supplying the chemical solution obtained by the chemical solution preparation device of the present invention to the chemical solution tank, a predetermined amount of the chemical solution having a desired concentration and a desired temperature is continuously supplied to the chemical solution tank. When a method of extracting an amount equivalent to the supply amount from the chemical solution tank is used, the properties of the chemical solution tank become constant, and therefore, variations in products due to changes in the properties of the chemical solution are reduced, and the yield is improved. Further, since the continuous operation is possible, the cleaning stop time is eliminated, and the operation time is increased as compared with the batch method, so that the productivity is increased.

Even in a method of supplying a chemical solution having a desired concentration and a desired temperature to a chemical solution tank in a batch system, since pure water to be supplied is high-temperature ultrapure water, compared with the conventional ultrapure water supply at room temperature, it is more desirable. The time required for raising the temperature can be shortened.

[Brief description of the drawings]

FIG. 1 is a flow sheet showing a first embodiment of a high-temperature ultrapure water production apparatus of the present invention.

FIG. 2 is a flow sheet showing a second embodiment of the high-temperature ultrapure water production apparatus of the present invention.

FIG. 3 is a flow sheet showing a conventional ultrapure water production apparatus.

FIG. 4 is a flow sheet showing a conventional high-temperature ultrapure water production apparatus.

FIG. 5 is a diagram illustrating an example of a processing step of a semiconductor process.

FIG. 6 is a diagram showing an example of a continuous water flow type electrodeionization apparatus.

FIG. 7 is a view showing another example of a continuous water flow type electrodeionization apparatus.

FIG. 8 is a view showing still another example of the continuous water flow type electrodeionization apparatus.

FIG. 9 is a flow sheet showing a first embodiment of the drug solution preparation device of the present invention.

FIG. 10 is a flow sheet showing a second embodiment of the drug solution preparation device of the present invention.

FIG. 11 is a flow sheet showing a third embodiment of the drug solution preparation device of the present invention.

FIG. 12 is a flow sheet showing a fourth embodiment of the drug solution preparation device of the present invention.

[Explanation of symbols]

 21: Primary pure water system 22: Multiple effect evaporator 23: Ion exchange device 24: Production water heat exchanger 25: Cooling heat exchanger 26: Ion exchange device 31: High temperature ultrapure water production device 32: Electric field ion water production device 39 ： Mixer (mixing device)

──────────────────────────────────────────────────の Continuation of front page (51) Int.Cl. ⁶ Identification code FI C02F 9/00 503 C02F 9/00 503B 504 504B 1/46 1/46 A H01L 21/304 341 H01L 21/304 341Z (72) Inventor Kazunori Kiba 5-3-28 Nishikujo, Konohana-ku, Osaka City Inside Hitachi Zosen Corporation (72) Inventor Shoichi Momose 5-28 Nishikujo, Konohana-ku, Osaka City Inside Hitachi Zosen Corporation (72) Invention Person Toshinori Iwai 5-3-28 Nishikujo, Konohana-ku, Osaka Inside Hitachi Zosen Corporation

Claims (19)

[Claims] 1. An evaporator that obtains high-temperature ultrapure water by treating pretreated water obtained by subjecting raw water to coagulation filtration and degassing, or primary water obtained by a primary pure water system, and an evaporator. A high-temperature ultrapure water production apparatus, comprising: an ion exchange apparatus for removing trace metal ions contained in the ultrapure water. 2. The high temperature ultrapure water production apparatus according to claim 1, wherein the ion exchange apparatus is filled with a mixed bed type ion exchange resin or a strongly acidic cation exchange resin. 3. The high-temperature ultrapure water production apparatus according to claim 1, wherein the ion exchange apparatus is filled with an ion exchange membrane or ion exchange fibers. 4. The high-temperature ultrapure water production apparatus according to claim 1, wherein the ion exchange apparatus is a continuous water-flow type electrodeionization apparatus. 5. The ion exchange apparatus is filled with a heat-resistant mixed-bed ion-exchange resin, a heat-resistant strongly acidic cation-exchange resin, a heat-resistant ion exchange membrane, or a heat-resistant ion exchange fiber. 1. High temperature ultrapure water production equipment. 6. Heat exchange between the high-temperature trace metal ion-free ultrapure water obtained in the evaporator and the room temperature trace metal ion-free ultrapure water treated by the ion exchanger.
2. A production water heat exchanger for cooling the high-temperature ultrapure water from which trace metal ions have not been removed before supplying the ultrapure water to the ion exchanger, and heating the ultrapure water from which trace metal ions have been removed at room temperature. To 4 high-temperature ultrapure water production equipment. 7. A cooling heat exchanger further comprising cooling the ultrapure water from which trace metal ions have not been removed cooled by the production water heat exchanger to 40 ° C. or less to supply water to the ion exchange device. 6. High temperature ultrapure water production equipment. 8. The production water heat exchanger, wherein the liquid contact portion is made of titanium;
8. The high-temperature ultrapure water production apparatus according to claim 6, wherein the apparatus is made of an oxidation-passive stainless steel subjected to a special heat treatment for electrolytic polishing or an oxidation-passive stainless steel subjected to a special heat treatment for electrolytic combined polishing. 9. The liquid contact part of the cooling heat exchanger is made of stainless steel, titanium, oxidation passivated stainless steel subjected to special heat treatment for electrolytic polishing, or oxidation passivated stainless steel subjected to special heat treatment for electrolytic combined polishing. The high-temperature ultrapure water production apparatus according to claim 7, wherein 10. A high-temperature ultrapure water production apparatus according to claim 1, and an electric field ion water production apparatus for decomposing the high-temperature ultrapure water obtained by the high-temperature ultrapure water production apparatus into electrolytic anode water and electrolytic cathode water. And a supply device for directly supplying an electrolytic anode water and an electrolytic cathode water to a chemical tank of a semiconductor or other precision device processing apparatus. 11. A high-temperature ultrapure water production apparatus according to claim 1, wherein the high-temperature ultrapure water obtained by the high-temperature ultrapure water production apparatus and a drug mixed with the high-temperature ultrapure water are used as a semiconductor or other precision device. And a chemical solution supply adjusting device for directly supplying the chemical solution in the chemical solution tank to a desired temperature or concentration and for directly supplying the chemical solution in the chemical solution tank. 12. A high-temperature ultrapure water production apparatus according to claim 1 and a high-temperature ultrapure water obtained by the high-temperature ultrapure water production apparatus, wherein a chemical is mixed with the high-temperature ultrapure water to obtain a semiconductor or other precision device processing apparatus. A mixing device for obtaining a chemical solution supplied to the chemical solution tank. 13. The high-temperature ultrapure water production apparatus according to claim 1 and the high-temperature ultrapure water obtained by the high-temperature ultrapure water production apparatus,
A chemical liquid preparation device including a mixing device for mixing a material gas such as HCl, NH ₃ , HF, NH ₄ F, SOx, and NOx and an oxidizing gas such as O ₃ , O ₂ , and oxygen radicals. 14. A method for producing high-temperature ultrapure water using the high-temperature ultrapure water production apparatus according to claim 1. 15. A chemical liquid preparation method for obtaining a chemical liquid used in the manufacture of semiconductors or other precision devices using the chemical liquid preparation apparatus according to claim 10. 16. High-temperature ultrapure water obtained by the method of claim 14. 17. A chemical obtained by the method according to claim 15. 18. A semiconductor or other precision device cleaned by the high-temperature ultrapure water according to claim 16. 19. A semiconductor or other precision device treated with the chemical solution of claim 17 and washed with the high-temperature ultrapure water of claim 16.