JPH10273341A - Formation of ceramic rib - Google Patents

Formation of ceramic rib

Info

Publication number
JPH10273341A
JPH10273341A JP7597797A JP7597797A JPH10273341A JP H10273341 A JPH10273341 A JP H10273341A JP 7597797 A JP7597797 A JP 7597797A JP 7597797 A JP7597797 A JP 7597797A JP H10273341 A JPH10273341 A JP H10273341A
Authority
JP
Japan
Prior art keywords
ceramic
glass substrate
rib
conductive film
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP7597797A
Other languages
Japanese (ja)
Inventor
Seiji Toyoda
誠司 豊田
Hideaki Sakurai
英章 桜井
Yoshio Kuromitsu
祥郎 黒光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP7597797A priority Critical patent/JPH10273341A/en
Publication of JPH10273341A publication Critical patent/JPH10273341A/en
Withdrawn legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/006Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character
    • C03C17/008Surface treatment of glass, not in the form of fibres or filaments, by coating with materials of composite character comprising a mixture of materials covered by two or more of the groups C03C17/02, C03C17/06, C03C17/22 and C03C17/28

Landscapes

  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Liquid Crystal (AREA)
  • Surface Treatment Of Glass (AREA)
  • Gas-Filled Discharge Tubes (AREA)

Abstract

(57)【要約】 【課題】少ない工程で材料の無駄なく、簡便にかつ精度
良くセラミックリブを形成できる。 【解決手段】先ずガラス基板11上のリブ形成予定部に
Ag系の厚膜ペースト14を塗布して乾燥し、乾燥した
厚膜ペーストを焼成してガラス基板上のリブ形成予定部
にAg系膜等からなる導電膜12を形成する。次に導電
膜を形成したガラス基板とこの基板に対向する対向電極
をセラミック粉末が懸濁したスラリーに浸漬し、スラリ
ー中でガラス基板上の導電膜を陽極とし対向電極を陰極
として両電極に直流電圧を印加して導電膜上にセラミッ
ク粉末層を電着する。更にガラス基板を乾燥した後セラ
ミック粉末層を焼成してセラミックリブ13を形成す
る。セラミック粉末はSiO2系ガラス粉末等であり、
セラミックリブはプラズマディスプレーパネルのガラス
基板上に放電セルを形成するための隔壁に好適である。
(57) [Summary] A ceramic rib can be formed simply and accurately with a small number of steps without waste of material. An Ag-based thick film paste is applied to a portion where a rib is to be formed on a glass substrate and dried. The dried thick film paste is fired to form an Ag-based film on a portion where a rib is to be formed on the glass substrate. A conductive film 12 made of, for example, is formed. Next, the glass substrate on which the conductive film is formed and the counter electrode facing the substrate are immersed in a slurry in which ceramic powder is suspended. In the slurry, a direct current is applied to both electrodes using the conductive film on the glass substrate as an anode and the counter electrode as a cathode. A voltage is applied to electrodeposit a ceramic powder layer on the conductive film. After drying the glass substrate, the ceramic powder layer is fired to form the ceramic ribs 13. The ceramic powder is a SiO 2 glass powder or the like,
The ceramic rib is suitable for a partition for forming a discharge cell on a glass substrate of a plasma display panel.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、プラズマディスプ
レーパネル、液晶表示装置、蛍光表示装置、混成集積回
路装置等の製造工程におけるセラミックリブの形成方法
に関する。更に詳しくは発光体のセルの隔壁やバス電極
上に形成される絶縁保護層となるセラミックリブの形成
方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a ceramic rib in a process of manufacturing a plasma display panel, a liquid crystal display, a fluorescent display, a hybrid integrated circuit device, and the like. More specifically, the present invention relates to a method for forming a ceramic rib serving as an insulating protective layer formed on a partition of a cell of a light emitting body or a bus electrode.

【0002】[0002]

【従来の技術】プラズマディスプレーパネル(plasma d
isplay panel,以下、PDPという)を例に挙げると、
このPDPは気体放電を利用した画像表示装置であっ
て、通常多数の微小な放電セルを縦横(マトリクス状)
に配列し、必要な部分のセルを放電発光させることによ
り、文字や図形が表示されるようになっている。このP
DPは構造が簡単で大型化が容易であり、メモリ機能を
有し、またカラー化が可能であり、更にテレビなどで用
いられるブラウン管よりも遥かに大きくかつ奥行が小さ
く形成できるなどの様々な利点を有することから、近年
盛んに研究開発が進められている。
2. Description of the Related Art Plasma display panels (plasma d)
isplay panel, hereafter referred to as PDP)
This PDP is an image display device using gas discharge, and usually has a large number of minute discharge cells arranged vertically and horizontally (in a matrix).
And characters and graphics are displayed by discharging and emitting light from necessary cells. This P
The DP has various advantages such as a simple structure, easy enlargement, a memory function, colorization, and a much larger and smaller depth than a CRT used in a television or the like. Therefore, research and development have been actively promoted in recent years.

【0003】上記PDPは、電極構造の点で金属電極が
ガラス誘電体材料で覆われるAC型と、放電空間に金属
電極が露出しているDC型とに分類される。例えばAC
型のPDPは図2及び図3に示すように、ガラス基板1
上に所定の間隔をあけて形成されたセラミックリブ2を
介してガラスプレート3を被せることにより構成され
る。ガラスプレート3のガラス基板1への対向面にはM
gO(酸化マグネシウム)等の保護膜3aにより被覆さ
れた表示電極3b及び誘電体層3cが形成され、ガラス
基板1とガラスプレート3とセラミックリブ2にて区画
形成された微細空間4(図3、以下、放電セルという)
内にはアドレス電極4a及び蛍光体4bがそれぞれ形成
される。また放電セル4内には放電ガス(図示せず)が
注入される。
[0003] The PDPs are classified into an AC type in which a metal electrode is covered with a glass dielectric material in terms of an electrode structure, and a DC type in which the metal electrode is exposed in a discharge space. For example, AC
As shown in FIG. 2 and FIG.
The glass plate 3 is formed over the ceramic ribs 2 formed at a predetermined interval on the glass plate 3. The surface of the glass plate 3 facing the glass substrate 1 has M
A display space 3b and a dielectric layer 3c covered with a protective film 3a of gO (magnesium oxide) or the like are formed, and a minute space 4 (FIG. 3, FIG. Hereinafter, referred to as a discharge cell)
An address electrode 4a and a phosphor 4b are formed therein. A discharge gas (not shown) is injected into the discharge cells 4.

【0004】このように構成されたPDPでは、表示電
極3bとアドレス電極4aとの間に電圧を印加してセラ
ミックリブ2間に形成された放電セル4内の蛍光体4b
を選択的に放電発光させることにより、文字や図形を表
示することができる。ここで、PDPの表示特性上、選
択的放電発光を確実に行うことができる独立性の優れた
放電セル4を形成するために、比較的高さの高いセラミ
ックリブ2を精度良く形成することが極めて重要とな
る。このため、セラミックリブ2の形成方法として、ガ
ラス基板1上にアドレス電極4aを所定のパターンで形
成した後、セラミックス又はガラスからなる無機ペース
トをスクリーン印刷法により付着させて焼成することに
より、約70μmの幅で100〜150μmの高さにリ
ブ2を形成する第1の方法が知られている。
In the PDP constructed as described above, a voltage is applied between the display electrode 3b and the address electrode 4a, and the phosphor 4b in the discharge cell 4 formed between the ceramic ribs 2 is applied.
By selectively causing discharge light emission, characters and figures can be displayed. Here, in view of the display characteristics of the PDP, in order to form the discharge cell 4 having excellent independence capable of reliably performing selective discharge light emission, it is necessary to accurately form the ceramic rib 2 having a relatively high height. It is extremely important. For this reason, as a method of forming the ceramic ribs 2, an address electrode 4a is formed on the glass substrate 1 in a predetermined pattern, and then an inorganic paste made of ceramics or glass is applied by a screen printing method and baked to have a thickness of about 70 μm. A first method for forming the ribs 2 at a height of 100 to 150 μm in width is known.

【0005】一方、セラミックリブの第2の形成方法と
して、サンドブラスト法が知られている。この方法で
は、図4に示すようにガラス基板1の全面にガラス粉末
を含むセラミックペーストを厚膜法で塗布し、乾燥する
ことにより、或はガラス粉末を含むセラミックグリーン
テープを積層することにより、150〜200μm厚の
パターン形成層6を形成した後、このパターン形成層6
を感光性フィルム7で被覆し、更にこのフィルム7上を
マスク8で覆って、露光、現像を行うことにより所定の
パターンのレジスト層9を形成する。次いでこのレジス
ト層9の上方からサンドブラスト処理を施してセル4と
なる部分を取除いてセラミックグリーンリブ6aを形成
した後、剥離剤等を用いてレジスト層9を除去して、所
望のリブ2を得ている。
On the other hand, a sand blast method is known as a second method of forming the ceramic rib. In this method, as shown in FIG. 4, a ceramic paste containing glass powder is applied to the entire surface of the glass substrate 1 by a thick film method and dried, or by laminating a ceramic green tape containing glass powder. After forming the pattern forming layer 6 having a thickness of 150 to 200 μm,
Is coated with a photosensitive film 7, and the film 7 is further covered with a mask 8, and is exposed and developed to form a resist layer 9 having a predetermined pattern. Next, after performing a sandblasting process from above the resist layer 9 to remove a portion to be the cell 4 to form a ceramic green rib 6a, the resist layer 9 is removed using a release agent or the like, and the desired rib 2 is removed. It has gained.

【0006】[0006]

【発明が解決しようとする課題】しかし、上記従来の第
1のセラミックリブの形成方法では、リブの厚さtが1
00μm程度と比較的狭くかつ印刷後にペーストがだれ
易いため、厚膜の一回塗りの高さは焼成上がりで10〜
20μm程度に小さく抑えなければならない。この結
果、この方法では、150〜200μmのリブを作るた
めに、厚膜を10〜20回もの多くの回数重ね塗りする
必要があり、その上重ね塗りした後のリブの高さ(≒
h)をリブの厚さ(≒t)で除したh/tが1.5〜2
程度と大きいために、厚膜印刷時に十分に位置合わせを
しても精度良くリブを形成しにくい欠点があった。また
上記従来の第2のセラミックリブの形成方法では、レジ
スト層の形成のために感光性フィルムの被覆、露光、現
像等の複雑な工程を必要とし、またサンドブラスト処理
でパターン形成層の大部分を取除くため、パターン形成
層の材料を多く必要とする不具合があった。本発明の目
的は、少ない工程で材料の無駄なく、簡便にかつ精度良
くセラミックリブを形成し得る方法を提供することにあ
る。
However, in the first conventional method for forming a ceramic rib, the thickness t of the rib is one.
Since the paste is relatively narrow, about 00 μm, and the paste tends to drip after printing, the height of a single coating of a thick film is 10 to
It must be kept as small as about 20 μm. As a result, in this method, in order to form a rib of 150 to 200 μm, it is necessary to apply the thick film repeatedly as many as 10 to 20 times, and the height of the rib after the upper application (≒)
h / t obtained by dividing h) by the thickness (≒ t) of the rib is 1.5 to 2
Due to the large size, there is a disadvantage that it is difficult to form ribs with high accuracy even when the alignment is sufficiently performed during thick film printing. In addition, the above-described conventional method for forming a ceramic rib requires complicated steps such as coating of a photosensitive film, exposure, and development to form a resist layer, and most of the pattern forming layer is subjected to sandblasting. There is a problem that a large amount of the material of the pattern forming layer is required for removal. An object of the present invention is to provide a method for forming a ceramic rib simply and accurately with a small number of steps and no waste of material.

【0007】[0007]

【課題を解決するための手段】請求項1に係る発明は、
図1に示すように、ガラス基板11上のリブ形成予定部
にAg系、Au系、Ni系、Al系又はRuO2系の厚
膜ペースト14を塗布し乾燥する工程と、乾燥した厚膜
ペースト14を焼成してガラス基板11上のリブ形成予
定部にAg系膜、Au系膜、Ni系膜、Al系膜又はR
uO2系膜からなる導電膜12を形成する工程と、この
導電膜12を形成したガラス基板11とこの基板11に
対向する対向電極とをセラミック粉末が懸濁したスラリ
ーに浸漬する工程と、スラリー中でガラス基板11上の
導電膜12を陽極とし対向電極を陰極として両電極に直
流電圧を印加して導電膜12上にセラミック粉末層を電
着する工程と、ガラス基板11を乾燥した後セラミック
粉末層を焼成してセラミックリブ13を形成する工程と
を含むセラミックリブの形成方法である。この請求項1
に記載されたセラミックリブの形成方法では、厚膜ペー
スト14をガラス基板11上に塗布、乾燥及び焼成して
導電膜12を形成し、この導電膜12上に電着法により
形成されたセラミック粉末層を乾燥及び焼成するという
少ない工程で、また材料の無駄が殆どなく、簡便にかつ
精度良くセラミックリブ13を形成できる。
The invention according to claim 1 is
As shown in FIG. 1, a step of applying and drying an Ag-based, Au-based, Ni-based, Al-based, or RuO 2 -based thick film paste 14 on a portion where a rib is to be formed on a glass substrate 11, and drying the thick film paste 14 is fired to form an Ag-based film, Au-based film, Ni-based film, Al-based film or R
a step of forming a conductive film 12 made of a uO 2 -based film, a step of dipping a glass substrate 11 on which the conductive film 12 is formed and a counter electrode facing the substrate 11 in a slurry in which ceramic powder is suspended, A step of applying a DC voltage to both electrodes using the conductive film 12 on the glass substrate 11 as an anode and a counter electrode as a cathode to electrodeposit a ceramic powder layer on the conductive film 12; Baking the powder layer to form the ceramic ribs 13. This claim 1
In the method for forming a ceramic rib described in (1), a thick film paste 14 is coated on a glass substrate 11, dried and fired to form a conductive film 12, and a ceramic powder formed on the conductive film 12 by an electrodeposition method. The ceramic ribs 13 can be formed easily and accurately with a small number of steps of drying and firing the layer, and with little waste of material.

【0008】請求項2に係る発明は、請求項1に係る発
明であって、更にセラミック粉末がSiO2系ガラス粉
末、B23系ガラス粉末又はP25系ガラス系粉末であ
ることを特徴とする。この請求項2に1記載されたセラ
ミックリブの形成方法では、導電膜とセラミックリブと
の接着強度が向上する。
The invention according to claim 2 is the invention according to claim 1, wherein the ceramic powder is a SiO 2 glass powder, a B 2 O 3 glass powder or a P 2 O 5 glass powder. It is characterized by. In the method for forming a ceramic rib according to the first aspect of the present invention, the adhesive strength between the conductive film and the ceramic rib is improved.

【0009】請求項3に係る発明は、請求項1又は2に
係る発明であって、更にセラミックリブがPDPのガラ
ス基板上に放電セルを形成するための隔壁であることを
特徴とする。この請求項3に記載されたセラミックリブ
の形成方法では、PDPの隔壁となるセラミックリブを
簡便にかつ精度良く形成できるので、PDPの品質を向
上できるとともにPDPの製造コストを低減できる。
The invention according to claim 3 is the invention according to claim 1 or 2, wherein the ceramic rib is a partition wall for forming a discharge cell on a glass substrate of a PDP. According to the method for forming a ceramic rib according to the third aspect, the ceramic rib serving as a partition of the PDP can be formed easily and accurately, so that the quality of the PDP can be improved and the manufacturing cost of the PDP can be reduced.

【0010】[0010]

【発明の実施の形態】次に本発明の実施の形態を図面に
基づいて詳しく説明する。図1(b)に示すように、ガ
ラス基板11上のリブ形成予定部に導電膜12が形成さ
れ、この導電膜12上にセラミックリブ13が形成され
る。このセラミックリブ13はこの実施の形態では、P
DPのガラス基板上に放電セルを形成するための隔壁で
ある。また導電膜12を形成する金属としてはAg若し
くはAg合金、Au若しくはAu金合金、Ni若しくは
Ni合金、又はAl若しくはAl合金等が用いられ、導
電膜12を形成する酸化物としてはRuO2等が用いら
れる。導電膜12の厚さは0.1μm〜20μmの範囲
内にあることが好ましく、5μm〜10μmの範囲にあ
ることが更に好ましい。導電膜12の厚さを0.1μm
〜20μmの範囲に限定したのは、0.1μm未満では
ガラス粉末を均一に付着させ難くなる不具合があり、2
0μmを越えると基板との密着性が低下するという不具
合があるからである。
Embodiments of the present invention will now be described in detail with reference to the drawings. As shown in FIG. 1B, a conductive film 12 is formed on a portion where a rib is to be formed on a glass substrate 11, and a ceramic rib 13 is formed on the conductive film 12. In this embodiment, the ceramic rib 13 is formed by P
This is a partition for forming a discharge cell on a DP glass substrate. Ag or Ag alloy, Au or Au gold alloy, Ni or Ni alloy, Al or Al alloy, or the like is used as a metal forming the conductive film 12, and RuO 2 or the like is used as an oxide forming the conductive film 12. Used. The thickness of the conductive film 12 is preferably in the range of 0.1 μm to 20 μm, and more preferably in the range of 5 μm to 10 μm. The thickness of the conductive film 12 is 0.1 μm
The reason why the glass powder is limited to the range of 20 to 20 μm is that if it is less than 0.1 μm, it becomes difficult to uniformly adhere the glass powder.
If it exceeds 0 μm, there is a problem that the adhesion to the substrate is reduced.

【0011】セラミックリブ13を形成するセラミック
粉末としては、軟化温度が500℃以下、更に好ましく
は450〜490℃の範囲内にある、SiO2系、B2
3系、P25系等のガラス粉末を用いることが好まし
い。これらのガラス粉末の好適なガラス組成の例として
は、PbOを60〜90重量%、SiO2を10〜30
重量%、B23を5〜30重量%含むものが挙げられ
る。このガラス粉末の平均粒径は1.0〜5.0μmの
範囲内にあることが好ましく、2.5〜3.0μmの範
囲内にあることが更にが好ましい。なお、この実施の形
態では、セラミックリブをPDPのガラス基板上に放電
セルを形成するための隔壁としたが、セラミックリブは
液晶表示装置、蛍光表示装置、混成集積回路装置等の発
光体のセルの隔壁やバス電極上の絶縁保護層であっても
よい。
The ceramic powder for forming the ceramic rib 13 is a SiO 2 type, B 2 O having a softening temperature of 500 ° C. or less, more preferably in the range of 450 to 490 ° C.
It is preferable to use a glass powder such as a 3 type or a P 2 O 5 type. Examples of suitable glass compositions of the glass powder, the PbO 60 to 90 wt%, a SiO 2 10 to 30
Wt%, include those containing B 2 O 3 5 to 30 wt%. The average particle size of the glass powder is preferably in the range of 1.0 to 5.0 μm, and more preferably in the range of 2.5 to 3.0 μm. In this embodiment, the ceramic rib is a partition for forming a discharge cell on a glass substrate of a PDP. However, the ceramic rib is a cell of a luminous body such as a liquid crystal display device, a fluorescent display device, and a hybrid integrated circuit device. May be an insulating protective layer on the partition wall or the bus electrode.

【0012】このように構成されたセラミックリブ13
の形成方法を図1に基づいて説明する。図1(a)に示
すように、先ずガラス基板11上のリブ形成予定部にA
g系、Au系、Ni系、Al系又はRuO2系の厚膜ペ
ースト14をスクリーン印刷法により塗布した後、乾燥
する。上記厚膜ペースト14は0.1〜5.0μmの粒
径のAg若しくはAg合金、Au若しくはAu合金、N
i若しくはNi合金、Al若しくはAl合金、又はRu
2の金属又は酸化物粉末に、5〜20重量%のSiO2
系やB23系等のガラス粉末を添加し、これらを有機バ
インダ及び有機溶剤の溶液に均一に分散することにより
作製される。次いで上記乾燥した厚膜ペースト14を大
気雰囲気中で500〜600℃に5〜30分間保持して
焼成し、ガラス基板上のリブ形成予定部に導電膜12
(図1(b))を形成する。
The ceramic rib 13 thus constructed
The method of forming the first embodiment will be described with reference to FIG. As shown in FIG. 1 (a), first, A
A g-based, Au-based, Ni-based, Al-based, or RuO 2 -based thick film paste 14 is applied by a screen printing method and then dried. The thick film paste 14 is made of Ag or an Ag alloy having a particle size of 0.1 to 5.0 μm, Au or an Au alloy, N
i or Ni alloy, Al or Al alloy, or Ru
The metal or oxide powder O 2, 5-20 wt% SiO 2
It is produced by adding a glass powder such as a glass powder or a B 2 O 3 powder and uniformly dispersing them in a solution of an organic binder and an organic solvent. Then, the dried thick film paste 14 is held at 500 to 600 ° C. in an air atmosphere for 5 to 30 minutes and baked, and the conductive film 12 is
(FIG. 1B) is formed.

【0013】次に導電膜12を形成したガラス基板11
とこの基板11に対向する対向電極(図示せず)とをセ
ラミック粉末が懸濁したスラリーに浸漬し、このスラリ
ー中でガラス基板上の導電膜を陽極とし対向電極を陰極
として両電極に直流電圧を印加して導電膜上にセラミッ
ク粉末層(図示せず)を電着する。上記スラリーとし
て、イソプロピルアルコールに水を2〜4体積%添加し
た混合媒体に、ガラス粉末を分散させたスラリーを用い
ることが好ましい。また電着性を向上させるために上記
スラリーに0.1〜0.5体積%の酸を添加することが
好ましく、ガラス粉末のスラリーの濃度は0.02〜
0.20重量%の範囲内にあることが好ましい。対向電
極としては、Al、Cu、Ni等が好ましいが、Alが
最も適している。導電膜と対向電極との間に印加する直
流電圧は300〜800Vの範囲に設定することが好ま
しく、400〜700Vの範囲に設定することが更に好
ましい。上記セラミック粉末層が所望の高さに形成され
た後は、ガラス基板11を取出し、乾燥させた後、大気
雰囲気中でセラミック粉末層中のガラス粉末を450〜
600℃で焼成してセラミックリブ13を形成する。
Next, the glass substrate 11 on which the conductive film 12 is formed
And a counter electrode (not shown) facing the substrate 11 are immersed in a slurry in which ceramic powder is suspended. In this slurry, a DC voltage is applied to both electrodes using the conductive film on the glass substrate as an anode and the counter electrode as a cathode. Is applied to electrodeposit a ceramic powder layer (not shown) on the conductive film. As the slurry, it is preferable to use a slurry in which glass powder is dispersed in a mixed medium in which water is added to isopropyl alcohol at 2 to 4% by volume. Further, in order to improve the electrodeposition property, it is preferable to add 0.1 to 0.5% by volume of an acid to the slurry, and the concentration of the glass powder slurry is 0.02 to
Preferably it is in the range of 0.20% by weight. As the counter electrode, Al, Cu, Ni or the like is preferable, but Al is most suitable. The DC voltage applied between the conductive film and the counter electrode is preferably set in the range of 300 to 800 V, and more preferably in the range of 400 to 700 V. After the above-mentioned ceramic powder layer is formed at a desired height, the glass substrate 11 is taken out and dried, and then the glass powder in the ceramic powder layer is removed in an air atmosphere by 450 to 450 μm.
The ceramic ribs 13 are formed by firing at 600 ° C.

【0014】[0014]

【実施例】次に本発明の実施例を図面に基づいて詳しく
説明する。 <実施例1>図1に示すように、先ず50mm×75m
mのガラス基板(ソーダライムガラス)11を用意し
た。次いで粒径が2.0μmのAg粉末に、15重量%
のSiO2系ガラス粉末を添加し、これらをエチルセル
ロース及びα−テレピネオールの溶液に均一に分散する
ことにより厚膜ペースト14を作製した。上記ガラス基
板11上に上記厚膜ペースト14をスクリーン印刷法に
より幅が100μmとなるように塗布し乾燥した後、厚
膜ペースト14を大気雰囲気中で550℃に10分間保
持して焼成して、ガラス基板上にAgの導電膜13を形
成した。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing an embodiment of the present invention; <Example 1> First, as shown in FIG.
m glass substrate (soda lime glass) 11 was prepared. Then, 15% by weight was added to Ag powder having a particle size of 2.0 μm.
It was added SiO 2 based glass powder, to prepare a thick film paste 14 by these are uniformly dispersed in a solution of ethylcellulose and α- terpineol. After applying and drying the thick film paste 14 on the glass substrate 11 so as to have a width of 100 μm by screen printing, the thick film paste 14 is held at 550 ° C. for 10 minutes in an air atmosphere and fired. An Ag conductive film 13 was formed on a glass substrate.

【0015】一方、30体積%のイソプロピルアルコー
ルと、70体積%の酢酸エチルと、0.1体積%の酢酸
とを含む混合媒体を用意した。この媒体中に、平均粒径
が3.0μmであり、PbOが70重量%,SiO2
10重量%,B23が20重量%のガラス組成を有する
SiO2系ガラス粉末を0.2g(0.04重量%)添
加し、超音波をかけてガラス粉末を混合媒体に均一に分
散させてスラリーを調製した。
On the other hand, a mixed medium containing 30% by volume of isopropyl alcohol, 70% by volume of ethyl acetate, and 0.1% by volume of acetic acid was prepared. 0.2 g of SiO 2 glass powder having an average particle diameter of 3.0 μm, a glass composition of 70% by weight of PbO, 10% by weight of SiO 2 and 20% by weight of B 2 O 3 in this medium. (0.04% by weight) and ultrasonic waves were applied to uniformly disperse the glass powder in a mixed medium to prepare a slurry.

【0016】このスラリー中に、上記ガラス基板と、6
0mm×80mmのAl板よりなる対向電極とを、ガラ
ス基板11の導電膜12が形成された面と対向電極とが
対面するように配置して浸漬し、導電膜12を陽極とし
かつ対向電極を陰極として導電膜12及び対向電極間に
600Vの直流電圧を印加し、導電膜12上にガラス粉
末のセラミック粉末層を形成した。電着終了後はガラス
基板11及びセラミック粉末層を十分に乾燥させて焼成
することにより、セラミックリブ13を形成した。
In the slurry, the above glass substrate and 6
A counter electrode made of an Al plate of 0 mm × 80 mm is placed and immersed such that the surface of the glass substrate 11 on which the conductive film 12 is formed and the counter electrode face each other, and the conductive film 12 is used as the anode and the counter electrode is used as the counter electrode. A DC voltage of 600 V was applied between the conductive film 12 and the counter electrode as a cathode, and a ceramic powder layer of glass powder was formed on the conductive film 12. After the electrodeposition, the glass substrate 11 and the ceramic powder layer were sufficiently dried and fired to form the ceramic ribs 13.

【0017】<実施例2>粒径が2.0μmのAu粉末
に、10重量%のSiO2系ガラス粉末を添加し、これ
らをエチルセルロース及びα−テレピネオールの溶液に
均一に分散することにより厚膜ペーストを作製し、ガラ
ス基板上に塗布して乾燥した上記厚膜ペーストを大気雰
囲気中で560℃に10分間保持して焼成したことを除
いて、上記実施例1と同一の方法でガラス基板上にセラ
ミックリブを形成した。
<Example 2> A thick film was prepared by adding 10% by weight of SiO 2 glass powder to Au powder having a particle size of 2.0 μm and uniformly dispersing them in a solution of ethyl cellulose and α-terpineol. A paste was prepared, applied on a glass substrate and dried, and the thick film paste was dried at 560 ° C. for 10 minutes in an air atmosphere and fired on a glass substrate in the same manner as in Example 1 above. A ceramic rib was formed on the substrate.

【0018】<実施例3>粒径が2.5μmのNi粉末
に、15重量%のB23系ガラス粉末を添加し、これら
をエチルセルロース及びα−テレピネオールの溶液に均
一に分散することにより厚膜ペーストを作製し、ガラス
基板上に塗布して乾燥した上記厚膜ペーストを大気雰囲
気中で550℃に10分間保持して焼成したことを除い
て、上記実施例1と同一の方法でガラス基板上にセラミ
ックリブを形成した。
Example 3 15% by weight of a B 2 O 3 glass powder was added to a Ni powder having a particle size of 2.5 μm, and these were uniformly dispersed in a solution of ethyl cellulose and α-terpineol. A thick film paste was prepared, applied to a glass substrate, and dried. The thick film paste was dried at 550 ° C. for 10 minutes in an air atmosphere and fired in the same manner as in Example 1 above. Ceramic ribs were formed on the substrate.

【0019】<実施例4>粒径が1.5μmのAl粉末
に、10重量%のSiO2系ガラス粉末を添加し、これ
らをエチルセルロース及びα−テレピネオールの溶液に
均一に分散することにより厚膜ペーストを作製し、ガラ
ス基板上に塗布して乾燥した上記厚膜ペーストを大気雰
囲気中で560℃に10分間保持して焼成したことを除
いて、上記実施例1と同一の方法でガラス基板上にセラ
ミックリブを形成した。
Example 4 A 10% by weight SiO 2 glass powder was added to an Al powder having a particle size of 1.5 μm, and these were uniformly dispersed in a solution of ethyl cellulose and α-terpineol to form a thick film. A paste was prepared, applied on a glass substrate and dried, and the thick film paste was dried at 560 ° C. for 10 minutes in an air atmosphere and fired on a glass substrate in the same manner as in Example 1 above. A ceramic rib was formed on the substrate.

【0020】<実施例5>粒径が3.0μmのRuO2
粉末に、20重量%のSiO2系ガラス粉末を添加し、
これらをエチルセルロース及びα−テレピネオールの溶
液に均一に分散することにより厚膜ペーストを作製し、
ガラス基板上に塗布して乾燥した上記厚膜ペーストを大
気雰囲気中で560℃に10分間保持して焼成したこと
を除いて、上記実施例1と同一の方法でガラス基板上に
セラミックリブを形成した。
Example 5 RuO 2 having a particle size of 3.0 μm
20% by weight of SiO 2 glass powder is added to the powder,
A thick film paste was prepared by uniformly dispersing these in a solution of ethyl cellulose and α-terpineol,
A ceramic rib was formed on a glass substrate in the same manner as in Example 1 except that the thick film paste applied and dried on a glass substrate was baked by holding at 560 ° C. for 10 minutes in an air atmosphere. did.

【0021】<比較試験及び評価>実施例1〜5の電着
工程における導電膜及び対向電極間への直流電圧の印加
時間を、スラリーが目視により透明になるまでの時間と
し、その時間を測定した。また実施例1〜5の焼成後の
ガラス基板上のセラミックリブの幅の誤差と、高さ及び
高さのむらをそれぞれ測定した。
<Comparative Test and Evaluation> The application time of the DC voltage between the conductive film and the counter electrode in the electrodeposition step in Examples 1 to 5 was taken as the time until the slurry became visually transparent, and the time was measured. did. In addition, the width error, height, and unevenness of the height of the ceramic ribs on the glass substrate after firing in Examples 1 to 5 were measured.

【0022】[0022]

【表1】 [Table 1]

【0023】表1から明らかなように、実施例1〜5の
電着工程における導電膜及び対向電極間への直流電圧の
印加時間は20〜30分と比較的短く、このような短時
間で高さが147〜155μmのセラミックリブを形成
できることが判った。またセラミックリブの幅の誤差及
び高さもそれぞれ−5〜+5μm及び±2〜±3μmと
小さく、精度良くセラミックリブを形成できることが判
った。
As is clear from Table 1, the application time of the DC voltage between the conductive film and the counter electrode in the electrodeposition step of Examples 1 to 5 is relatively short, 20 to 30 minutes. It was found that ceramic ribs having a height of 147 to 155 μm could be formed. In addition, the width error and the height of the ceramic rib were also small, such as -5 to +5 μm and ± 2 to ± 3 μm, and it was found that the ceramic rib could be formed accurately.

【0024】[0024]

【発明の効果】以上述べたように、本発明によれば、ガ
ラス基板上のリブ形成予定部にAg系等の厚膜ペースト
を塗布して乾燥し、この厚膜ペーストを焼成してガラス
基板上のリブ形成予定部にAg系膜等からなる導電膜を
形成し、このガラス基板及び対向電極をセラミック粉末
が懸濁したスラリーに浸漬し、スラリー中でガラス基板
上の導電膜を陽極とし対向電極を陰極として両電極に直
流電圧を印加して導電膜上にセラミック粉末層を電着
し、更にガラス基板を乾燥した後セラミック粉末層を焼
成してセラミックリブを形成したので、150〜200
μmと高いリブを作るのに厚膜を10〜20回もの多く
の回数重ね塗りする必要がある従来の第1のセラミック
リブの形成方法と比較して、本発明のセラミックリブの
形成方法では、簡便にかつ精度良くセラミックリブを形
成できる。
As described above, according to the present invention, a thick paste such as Ag is applied to a portion where a rib is to be formed on a glass substrate and dried, and the thick film paste is fired to form a glass substrate. A conductive film made of an Ag-based film or the like is formed on the upper rib forming portion, and the glass substrate and the counter electrode are immersed in a slurry in which ceramic powder is suspended. Since a ceramic powder layer was electrodeposited on the conductive film by applying a DC voltage to both electrodes using the electrode as a cathode, and further drying the glass substrate, the ceramic powder layer was fired to form ceramic ribs.
Compared with the first conventional method for forming a ceramic rib, in which a thick film needs to be repeatedly applied as many as 10 to 20 times to form a rib having a thickness of μm, the method for forming a ceramic rib of the present invention provides: Ceramic ribs can be formed easily and accurately.

【0025】またレジスト層の形成のために感光性フィ
ルムの被覆、露光、現像等の複雑な工程を必要とし、ま
たパターン形成層の材料を多く必要とする不具合のあっ
た従来の第2のセラミックリブの形成方法と比較して、
本発明のセラミックリブの形成方法では、少ない工程で
材料の無駄なく、簡便にかつ精度良くセラミックリブを
形成できる。またセラミック粉末としてSiO2系ガラ
ス粉末、B23系ガラス粉末又はP25系ガラス系粉末
を用いれば、導電膜とセラミックリブとの接着強度を向
上できる。更にセラミックリブをPDPのガラス基板上
に放電セルを形成するための隔壁として用いれば、PD
Pの隔壁となるセラミックリブを簡便にかつ精度良く形
成できるので、PDPの品質を向上できるとともにPD
Pの製造コストを低減できる。
In addition, a conventional second ceramic which has a problem in that a complicated process such as coating, exposure and development of a photosensitive film is required for forming a resist layer and a large amount of material for a pattern forming layer is required. Compared to the method of forming ribs,
According to the method for forming a ceramic rib of the present invention, the ceramic rib can be formed simply and accurately with a small number of steps without waste of material. If SiO 2 glass powder, B 2 O 3 glass powder or P 2 O 5 glass powder is used as the ceramic powder, the adhesive strength between the conductive film and the ceramic rib can be improved. Further, if ceramic ribs are used as partition walls for forming discharge cells on a PDP glass substrate, PD
Since the ceramic ribs serving as partition walls for P can be formed easily and accurately, the quality of PDP can be improved and
The manufacturing cost of P can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明一実施形態のセラミックリブの形成を工
程順に示す断面図。
FIG. 1 is a sectional view showing the formation of a ceramic rib according to an embodiment of the present invention in the order of steps.

【図2】従来のセラミックリブを含むプラズマディスプ
レーパネルの分解斜視図。
FIG. 2 is an exploded perspective view of a conventional plasma display panel including a ceramic rib.

【図3】図2のA部拡大図。FIG. 3 is an enlarged view of a portion A in FIG. 2;

【図4】従来のセラミックリブの形成を工程順に示す断
面図。
FIG. 4 is a sectional view showing the formation of a conventional ceramic rib in the order of steps.

【符号の説明】[Explanation of symbols]

11 ガラス基板 12 導電膜 13 セラミックリブ 14 厚膜ペースト DESCRIPTION OF SYMBOLS 11 Glass substrate 12 Conductive film 13 Ceramic rib 14 Thick film paste

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 ガラス基板(11)上のリブ形成予定部にA
g系、Au系、Ni系、Al系又はRuO2系の厚膜ペ
ースト(14)を塗布し乾燥する工程と、 前記乾燥した厚膜ペースト(14)を焼成して前記ガラス基
板(11)上のリブ形成予定部にAg系膜、Au系膜、Ni
系膜、Al系膜又はRuO2系膜からなる導電膜(12)を
形成する工程と、 前記導電膜(12)を形成したガラス基板(11)とこの基板(1
1)に対向する対向電極とをセラミック粉末が懸濁したス
ラリーに浸漬する工程と、 前記スラリー中で前記ガラス基板(11)上の導電膜(12)を
陽極とし前記対向電極を陰極として両電極に直流電圧を
印加して前記導電膜(12)上にセラミック粉末層を電着す
る工程と、 前記ガラス基板(11)を乾燥した後前記セラミック粉末層
を焼成してセラミックリブ(13)を形成する工程とを含む
セラミックリブの形成方法。
An A is formed on a portion of a glass substrate (11) where a rib is to be formed.
a step of applying and drying a g-based, Au-based, Ni-based, Al-based or RuO 2 -based thick film paste (14); and firing the dried thick film paste (14) on the glass substrate (11). Ag-based film, Au-based film, Ni
Forming a conductive film (12) made of a base film, an Al-based film, or a RuO 2 -based film; a glass substrate (11) on which the conductive film (12) is formed;
A step of immersing a counter electrode facing 1) in a slurry in which ceramic powder is suspended, and both electrodes in the slurry using the conductive film (12) on the glass substrate (11) as an anode and the counter electrode as a cathode. Applying a DC voltage to the electrodepositing a ceramic powder layer on the conductive film (12); and drying the glass substrate (11) and then firing the ceramic powder layer to form a ceramic rib (13). And forming a ceramic rib.
【請求項2】 セラミック粉末がSiO2系ガラス粉
末、B23系ガラス粉末又はP25系ガラス系粉末であ
る請求項1記載のセラミックリブの形成方法。
2. The method according to claim 1, wherein the ceramic powder is a SiO 2 glass powder, a B 2 O 3 glass powder or a P 2 O 5 glass powder.
【請求項3】 セラミックリブがプラズマディスプレー
パネルのガラス基板上に放電セルを形成するための隔壁
である請求項1又は2記載のセラミックリブの形成方
法。
3. The method for forming a ceramic rib according to claim 1, wherein the ceramic rib is a partition for forming a discharge cell on a glass substrate of a plasma display panel.
JP7597797A 1997-03-27 1997-03-27 Formation of ceramic rib Withdrawn JPH10273341A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7597797A JPH10273341A (en) 1997-03-27 1997-03-27 Formation of ceramic rib

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7597797A JPH10273341A (en) 1997-03-27 1997-03-27 Formation of ceramic rib

Publications (1)

Publication Number Publication Date
JPH10273341A true JPH10273341A (en) 1998-10-13

Family

ID=13591829

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7597797A Withdrawn JPH10273341A (en) 1997-03-27 1997-03-27 Formation of ceramic rib

Country Status (1)

Country Link
JP (1) JPH10273341A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1315004C (en) * 2002-09-10 2007-05-09 希毕克斯影像有限公司 An improved electrochromic or electrodeposition display and its manufacturing method
JP2010015992A (en) * 2008-07-07 2010-01-21 Samsung Sdi Co Ltd Paste containing aluminum for plasma display panel electrode, method of forming plasma display panel electrode by using the same paste, and plasma display panel electrode formed by the same method
US8436537B2 (en) 2008-07-07 2013-05-07 Samsung Sdi Co., Ltd. Substrate structure for plasma display panel, method of manufacturing the substrate structure, and plasma display panel including the substrate structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1315004C (en) * 2002-09-10 2007-05-09 希毕克斯影像有限公司 An improved electrochromic or electrodeposition display and its manufacturing method
JP2010015992A (en) * 2008-07-07 2010-01-21 Samsung Sdi Co Ltd Paste containing aluminum for plasma display panel electrode, method of forming plasma display panel electrode by using the same paste, and plasma display panel electrode formed by the same method
US8329066B2 (en) 2008-07-07 2012-12-11 Samsung Sdi Co., Ltd. Paste containing aluminum for preparing PDP electrode, method of preparing the PDP electrode using the paste and PDP electrode prepared using the method
US8436537B2 (en) 2008-07-07 2013-05-07 Samsung Sdi Co., Ltd. Substrate structure for plasma display panel, method of manufacturing the substrate structure, and plasma display panel including the substrate structure

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