JPH10274845A5 - - Google Patents

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Publication number
JPH10274845A5
JPH10274845A5 JP1997081075A JP8107597A JPH10274845A5 JP H10274845 A5 JPH10274845 A5 JP H10274845A5 JP 1997081075 A JP1997081075 A JP 1997081075A JP 8107597 A JP8107597 A JP 8107597A JP H10274845 A5 JPH10274845 A5 JP H10274845A5
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JP
Japan
Prior art keywords
group
acid
photosensitive composition
alkyl
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP1997081075A
Other languages
Japanese (ja)
Other versions
JPH10274845A (en
JP3773139B2 (en
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP08107597A external-priority patent/JP3773139B2/en
Priority to JP08107597A priority Critical patent/JP3773139B2/en
Priority to US09/050,007 priority patent/US6037098A/en
Priority to EP98105753A priority patent/EP0869393B1/en
Priority to DE69800164T priority patent/DE69800164T2/en
Priority to KR1019980011177A priority patent/KR100496174B1/en
Publication of JPH10274845A publication Critical patent/JPH10274845A/en
Publication of JPH10274845A5 publication Critical patent/JPH10274845A5/ja
Publication of JP3773139B2 publication Critical patent/JP3773139B2/en
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Claims (5)

酸の作用により分解し、アルカリ現像液中での溶解性を増大させる基を有する樹脂、及び活性光線または放射線の照射により、スルホン酸を発生する下記一般式(I)で表される化合物、を含有することを特徴とするポジ型感光性組成物。
式中、R1 〜R3 は、同じでも異なっていてもよく、水素原子、アルキル基、シクロアルキル基、アルコキシ基、ヒドロキシ基、ハロゲン原子又は−S−R4基を示す。R4 はアルキル基又はアリール基を示す。X- は、炭素数8個以上のアルキル基又はアルコキシ基の群の中から選ばれる基を少なくとも1個有するか、炭素数4〜7個のアルキル基又はアルコキシ基の群の中から選ばれる基を少なくとも2個有するか、もしくは炭素数1〜3個のアルキル基又はアルコキシ基の群の中から選ばれる基を少なくとも3個有するベンゼンスルホン酸、ナフタレンスルホン酸、又はアントラセンスルホン酸のアニオンを示す。l、m及びnは、同じでも異なってもよく、1〜3の整数を示す。l、m及びnが各々2又は3の場合、2〜3個のR1 〜R3 のうちの各々の2個が互いに結合して、炭素環、複素環又は芳香環を含む5〜8個の元素から成る環を形成しても良い。
A positive-working photosensitive composition comprising: a resin having a group that is decomposed by the action of an acid and increases the solubility of the resin in an alkaline developer; and a compound represented by the following general formula (I) that generates a sulfonic acid upon exposure to actinic rays or radiation:
In the formula, R1 to R3 may be the same or different and represent a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxy group, a hydroxy group, a halogen atom, or an -S- R4 group. R4 represents an alkyl group or an aryl group. X- represents an anion of benzenesulfonic acid, naphthalenesulfonic acid, or anthracenesulfonic acid having at least one group selected from the group of alkyl or alkoxy groups having 8 or more carbon atoms, at least two groups selected from the group of alkyl or alkoxy groups having 4 to 7 carbon atoms, or at least three groups selected from the group of alkyl or alkoxy groups having 1 to 3 carbon atoms. l, m, and n may be the same or different and represent integers of 1 to 3. When l, m, and n are each 2 or 3, two of the two to three R1 to R3 may be bonded to each other to form a ring consisting of 5 to 8 elements, including a carbocyclic ring, a heterocyclic ring, or an aromatic ring.
酸により分解し得る基を有し、アルカル現像液中での溶解度が酸の作用により増大する、分子量3000以下の低分子酸分解性溶解阻止化合物を含有することを特徴とする請求項1に記載のポジ型感光性組成物。2. The positive photosensitive composition according to claim 1, further comprising a low-molecular-weight acid-decomposable dissolution-inhibiting compound having a molecular weight of 3,000 or less, which has an acid-decomposable group and whose solubility in an alkaline developer increases under the action of an acid. 水に不溶でアルカリ水溶液に可溶な樹脂を含有することを特徴とする請求項1又は2に記載のポジ型感光性組成物。3. The positive photosensitive composition according to claim 1, further comprising a resin that is insoluble in water but soluble in an aqueous alkaline solution. 活性光線または放射線の照射により、スルホン酸を発生する請求項1に記載の一般式(I)で表される化合物、酸により分解し得る基を有し、アルカリ現像液中での溶解度が酸の作用により増大する、分子量3000以下の低分子酸分解性溶解阻止化合物、及び水に不溶でアルカリ水溶液に可溶な樹脂を含有することを特徴とするポジ型感光性組成物。1. A positive-working photosensitive composition comprising: a compound represented by general formula (I) according to claim 1 which generates a sulfonic acid upon exposure to actinic rays or radiation; a low-molecular-weight acid-decomposable dissolution-inhibiting compound having a molecular weight of 3,000 or less, which has an acid-decomposable group and whose solubility in an alkaline developer increases under the action of acid; and a resin which is insoluble in water but soluble in an alkaline aqueous solution. 請求項1〜4のいずれかに記載のポジ型感光性組成物により膜を形成し、該膜を露光、現像することを特徴とするポジ型パターン形成方法。5. A method for forming a positive pattern, comprising forming a film from the positive photosensitive composition according to claim 1, exposing the film to light, and developing the film.
JP08107597A 1997-03-31 1997-03-31 Positive photosensitive composition Expired - Fee Related JP3773139B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP08107597A JP3773139B2 (en) 1997-03-31 1997-03-31 Positive photosensitive composition
US09/050,007 US6037098A (en) 1997-03-31 1998-03-30 Positive photosensitive composition
EP98105753A EP0869393B1 (en) 1997-03-31 1998-03-30 Positive photosensitive composition
DE69800164T DE69800164T2 (en) 1997-03-31 1998-03-30 Positive working photosensitive composition
KR1019980011177A KR100496174B1 (en) 1997-03-31 1998-03-31 Positive Photosensitive Composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08107597A JP3773139B2 (en) 1997-03-31 1997-03-31 Positive photosensitive composition

Publications (3)

Publication Number Publication Date
JPH10274845A JPH10274845A (en) 1998-10-13
JPH10274845A5 true JPH10274845A5 (en) 2004-10-07
JP3773139B2 JP3773139B2 (en) 2006-05-10

Family

ID=13736278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP08107597A Expired - Fee Related JP3773139B2 (en) 1997-03-31 1997-03-31 Positive photosensitive composition

Country Status (1)

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JP (1) JP3773139B2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002079691A1 (en) * 2001-03-30 2002-10-10 The Arizona Board Of Regents On Behalf Of The University Of Arizona Materials, methods, and uses for photochemical generation of acids and/or radical species
JP2003186197A (en) * 2001-12-19 2003-07-03 Sony Corp Resist material and exposure method
JP2003186198A (en) * 2001-12-19 2003-07-03 Sony Corp Resist material and exposure method
KR100881307B1 (en) 2004-02-20 2009-02-03 도오꾜오까고오교 가부시끼가이샤 Substrate for pattern forming material, positive resist composition and resist pattern forming method
JP3946715B2 (en) 2004-07-28 2007-07-18 東京応化工業株式会社 Positive resist composition and resist pattern forming method
JP4468119B2 (en) 2004-09-08 2010-05-26 東京応化工業株式会社 Resist composition and resist pattern forming method
JP4837323B2 (en) * 2004-10-29 2011-12-14 東京応化工業株式会社 Resist composition, resist pattern forming method and compound
US7981588B2 (en) 2005-02-02 2011-07-19 Tokyo Ohka Kogyo Co., Ltd. Negative resist composition and method of forming resist pattern
JP4397834B2 (en) 2005-02-25 2010-01-13 東京応化工業株式会社 Positive resist composition, resist pattern forming method and compound
JP5138157B2 (en) 2005-05-17 2013-02-06 東京応化工業株式会社 Positive resist composition and resist pattern forming method
JP4813103B2 (en) 2005-06-17 2011-11-09 東京応化工業株式会社 COMPOUND, POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
JP4732038B2 (en) 2005-07-05 2011-07-27 東京応化工業株式会社 COMPOUND, POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
JP6206311B2 (en) 2014-04-22 2017-10-04 信越化学工業株式会社 Photoacid generator, chemically amplified resist material, and pattern forming method
JP7739928B2 (en) 2021-10-15 2025-09-17 信越化学工業株式会社 Photoacid generator, chemically amplified resist composition, and pattern forming method

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