JPH10279399A - Production of single crystal - Google Patents
Production of single crystalInfo
- Publication number
- JPH10279399A JPH10279399A JP9678497A JP9678497A JPH10279399A JP H10279399 A JPH10279399 A JP H10279399A JP 9678497 A JP9678497 A JP 9678497A JP 9678497 A JP9678497 A JP 9678497A JP H10279399 A JPH10279399 A JP H10279399A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- single crystal
- intensity
- upper cone
- static magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 116
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000010453 quartz Substances 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 230000003068 static effect Effects 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 37
- 239000002994 raw material Substances 0.000 claims description 24
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 abstract description 3
- 238000007796 conventional method Methods 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、引上げＣＺ（Czoc
hralski）法によりＳｉ（シリコン）の無転位の単結晶
を製造するための単結晶製造方法に関し、特にＳｉ融液
に静磁場を印加しながら単結晶を成長させる単結晶製造
方法に関する。TECHNICAL FIELD The present invention relates to a pulling CZ (Czoc).
The present invention relates to a single crystal manufacturing method for manufacturing a dislocation-free single crystal of Si (silicon) by the hralski method, and more particularly to a single crystal manufacturing method for growing a single crystal while applying a static magnetic field to a Si melt.
【０００２】[0002]
【従来の技術】一般に、引上げＣＺ法による単結晶製造
装置では、高耐圧気密チャンバ内を１０torr程度に減圧
して新鮮なＡｒ（アルゴン）ガスを流すとともに、チャ
ンバ内の下方に設けられた石英るつぼ内の多結晶を加熱
して溶融し、この融液の表面に種結晶を上から浸漬し、
種結晶と石英るつぼを回転、上下移動させながら種結晶
を引き上げることにより、種結晶の下に上端が突出した
円錐形の上部コーン部と、円筒形のボディー部と下端が
突出した円錐形の下部コーン部より成る単結晶（いわゆ
るインゴット）を成長させるように構成されている。2. Description of the Related Art In general, in a single crystal manufacturing apparatus by the pulling CZ method, a high pressure-resistant hermetic chamber is decompressed to about 10 torr to flow fresh Ar (argon) gas, and a quartz crucible provided below the chamber is provided. The polycrystal in is melted by heating, and the seed crystal is immersed in the surface of this melt from above,
The seed crystal and the quartz crucible are rotated and moved up and down to raise the seed crystal, thereby forming a conical upper cone with the upper end protruding below the seed crystal, and a conical lower part with a cylindrical body and lower end protruding. It is configured to grow a single crystal (so-called ingot) composed of a cone portion.
【０００３】また、この成長方法として、Ｓｉ融液から
単結晶を成長させる場合、Ｓｉ融液の対流によるミクロ
な結晶成長の乱れが問題となるので、これを防止するた
めに、例えば特開昭６０−１６８９１号公報、特公平２
−１２９２０号公報、特開昭５９−１９９５９７号公報
に示されるように、Ｓｉ融液に対して縦型磁界や、横型
磁界、カスプ型磁界の静磁場を印加することにより磁力
線と直交する方向のＳｉ融液の動きを抑制するととも
に、単結晶を低酸素濃度化するＭＣＺ法が知られてい
る。[0003] Further, in the case of growing a single crystal from a Si melt as this growth method, a disturbance of micro crystal growth due to convection of the Si melt becomes a problem. No. 60-16891, Tokuhei 2
As shown in JP-A-12920 and JP-A-59-199597, a vertical magnetic field, a horizontal magnetic field, and a cusp-type magnetic field are applied to a Si melt so that the magnetic field in the direction orthogonal to the magnetic force lines is increased. The MCZ method for suppressing the movement of the Si melt and reducing the oxygen concentration of the single crystal is known.
【０００４】[0004]
【発明が解決しようとする課題】ところで、静磁場を印
加しながら単結晶を成長させるＭＣＺ法では、単結晶中
の酸素濃度を低減させることができるので、単結晶の大
径化による石英るつぼの大型化に伴い、低酸素濃度を維
持することが非常に重要な技術となる。しかしながら、
石英るつぼ自体が大型化すると、結晶端から石英るつぼ
までの距離が長くなるので石英るつぼ自体が高温化して
劣化が進み、さらにＭＣＺ法ではＳｉ融液の対流を抑制
するのでこの傾向を助長し、単結晶が転位するとともに
石英るつぼが高温化して劣化するという問題点がある。In the MCZ method in which a single crystal is grown while applying a static magnetic field, the oxygen concentration in the single crystal can be reduced. With the increase in size, maintaining a low oxygen concentration is a very important technology. However,
When the quartz crucible itself becomes larger, the distance from the crystal end to the quartz crucible becomes longer, so the quartz crucible itself becomes hotter and deteriorates.Moreover, in the MCZ method, the convection of the Si melt is suppressed, so this tendency is promoted. There is a problem that the dislocation of the single crystal occurs and the quartz crucible becomes hot and deteriorates.
【０００５】本発明は上記従来の問題点に鑑み、単結晶
が転位したり、石英るつぼが高温化して劣化することを
防止することができる単結晶製造方法を提供することを
目的とする。The present invention has been made in view of the above-mentioned conventional problems, and has as its object to provide a method for producing a single crystal which can prevent dislocation of the single crystal and deterioration of the quartz crucible due to high temperature.
【０００６】[0006]
【課題を解決するための手段】本発明者らは上記目的を
達成するために、単結晶の引上げプロセス中のどの工程
において石英るつぼの熱的負荷が最高になるかをＣＺ炉
内総合伝熱解析ソフトを用いて調べたところ、結晶が規
定の直径まで成長している場合より、種付けから絞り
（ネッキング）工程において融液の自由表面の面積が最
大となるプロセスにおいて１００℃以上高温になること
が判明した。さらに、対流解析を行った結果では、静磁
場の印加による対流制動効果による融液内の温度差は、
カスプ磁場を３５００ガウスで印加した場合と０ガウス
の場合で約４０℃の差があることが判明した。これらの
結果から、大口径の単結晶をＭＣＺ法で製造する場合、
溶融開始から上部コーン部の途中までの工程では、静磁
場の強度をボディー部の工程時より弱くし、その後静磁
場の強度を所定値まで強くしてボディー部を成長させる
方法が単結晶が転位したり、石英るつぼが高温化して劣
化することを防止することができることが判明した。Means for Solving the Problems In order to achieve the above object, the present inventors have determined which step in the single crystal pulling process has the highest thermal load on the quartz crucible in the CZ furnace. According to analysis using analysis software, it is found that the temperature of the free surface of the melt becomes higher than 100 ° C in the process where the area of the free surface of the melt is maximized in the step from seeding to the drawing (necking) than when the crystal has grown to the specified diameter. There was found. Furthermore, the results of convection analysis show that the temperature difference in the melt due to the convection braking effect by applying a static magnetic field is:
It was found that there was a difference of about 40 ° C. between when the cusp magnetic field was applied at 3500 gauss and when it was 0 gauss. From these results, when a large-diameter single crystal is manufactured by the MCZ method,
In the process from the start of melting to the middle of the upper cone, the strength of the static magnetic field is made weaker than that in the process of the body, and then the strength of the static magnetic field is increased to a predetermined value to grow the body. It has been found that the quartz crucible can be prevented from being deteriorated due to high temperature.
【０００７】すなわち本発明によれば、静磁界を印加し
ながら単結晶の引上げを行う単結晶製造方法において、
原料結晶の溶融から前記単結晶の上部コーン部の形成途
中に至るまでは前記単結晶のボディー部を形成するとき
に印加する静磁界の強度より低い強度の磁界を印加する
か、あるいは無磁界とすることを特徴とする単結晶製造
方法が提供される。That is, according to the present invention, in a single crystal manufacturing method for pulling a single crystal while applying a static magnetic field,
From the melting of the raw material crystal to the middle of the formation of the upper cone portion of the single crystal, a magnetic field having an intensity lower than that of the static magnetic field applied when forming the body portion of the single crystal is applied, or no magnetic field is applied. A method for producing a single crystal is provided.
【０００８】また、本発明によれば、石英るつぼ内の原
料結晶を加熱して溶融し、得られた原料融液に種結晶を
浸漬し、なじませ、その後、種結晶を引き上げてネック
部を形成し、次いで単結晶の上部コーン部とボディー部
を形成する単結晶製造方法において、前記溶融の開始か
ら前記上部コーン部を形成するプロセスの途中までは、
前記石英るつぼ内の前記原料に第１の強度の静磁界を印
加し、その後、前記上部コーン部を形成するプロセスの
一部にわたって前記第１の強度から静磁界強度を増加さ
せて第２の静磁界強度とし、前記ボディー部を形成する
にあたり前記第２の強度の静磁界を印加した状態とする
ことを特徴とする単結晶製造方法が提供される。Further, according to the present invention, the raw material crystal in the quartz crucible is heated and melted, the seed crystal is immersed in the obtained raw material melt, and is blended. Thereafter, the seed crystal is pulled up to form a neck portion. In the single crystal manufacturing method for forming and then forming the upper cone portion and the body portion of the single crystal, from the start of the melting to the middle of the process of forming the upper cone portion,
A static magnetic field of a first intensity is applied to the raw material in the quartz crucible, and thereafter, the static magnetic field intensity is increased from the first intensity to a second static magnetic field over a part of a process of forming the upper cone portion. A method for producing a single crystal is provided, wherein a magnetic field strength is set, and a static magnetic field of the second strength is applied when forming the body portion.
【０００９】また、本発明によれば、石英るつぼ内の原
料融液に種結晶を浸漬し、なじませ、その後、種結晶を
引き上げてネック部を形成し、次いで単結晶の上部コー
ン部とボディー部を形成する単結晶製造方法において、
前記上部コーン部を形成するプロセス中に前記石英るつ
ぼ内の前記原料融液に第１の強度の静磁界の印加を開始
し、その後、前記上部コーン部を形成するプロセスの一
部にわたって前記第１の強度から静磁界強度を増加させ
て第２の静磁界強度とし、前記ボディー部を形成するに
あたり前記第２の強度の静磁界を印加した状態とするこ
とを特徴とする単結晶製造方法が提供される。Further, according to the present invention, a seed crystal is immersed in a raw material melt in a quartz crucible and is allowed to adjust, then the seed crystal is pulled up to form a neck portion, and then a single crystal upper cone portion and a body are formed. In the method for producing a single crystal for forming a part,
During the process of forming the upper cone portion, the application of a static magnetic field of a first intensity to the raw material melt in the quartz crucible is started, and thereafter, the first magnetic field is applied over a part of the process of forming the upper cone portion. A method for producing a single crystal, characterized in that the static magnetic field intensity is increased from the intensity of the first portion to a second static magnetic field intensity, and a static magnetic field of the second intensity is applied when forming the body portion. Is done.
【００１０】また、本発明によれば、石英るつぼ内の原
料結晶を加熱して溶融し、得られた原料融液に種結晶を
浸漬し、なじませ、その後、種結晶を引き上げてネック
部を形成し、次いで単結晶の上部コーン部とボディー部
を形成する単結晶製造方法において、前記溶融の開始か
ら前記上部コーン部を形成するプロセスの途中であっ
て、前記ボディー部の径の１０ないし５０％に至るまで
は、前記石英るつぼ内の前記原料に第１の強度の静磁界
を印加し、その後、前記上部コーン部を形成するプロセ
スで、前記ボディー部の径の６０ないし９０％に至るま
で前記第１の強度から静磁界強度を増加させて、第２の
静磁界強度とし、前記上部コーン部の残りの部分と、前
記ボディー部を形成するにあたり前記第２の強度の静磁
界を印加した状態とすることを特徴とする単結晶製造方
法が提供される。Further, according to the present invention, the raw material crystal in the quartz crucible is heated and melted, the seed crystal is immersed in the obtained raw material melt, and is blended. Thereafter, the seed crystal is pulled up to form a neck portion. In the single crystal manufacturing method of forming and then forming the upper cone portion and the body portion of the single crystal, the process of forming the upper cone portion from the start of the melting is performed during the process of forming the upper cone portion, and the diameter of the body portion is 10 to 50. %, A static magnetic field of a first intensity is applied to the raw material in the quartz crucible, and then, in the process of forming the upper cone portion, up to 60 to 90% of the diameter of the body portion. The static magnetic field strength was increased from the first strength to a second static magnetic field strength, and a static magnetic field of the second strength was applied to form the remaining portion of the upper cone portion and the body portion. State and Producing a single crystal wherein the Rukoto is provided.
【００１１】また、本発明によれば、石英るつぼ内の原
料融液に種結晶を浸漬し、なじませ、その後、種結晶を
引き上げてネック部を形成し、次いで単結晶の上部コー
ン部とボディー部を形成する単結晶製造方法において、
前記上部コーン部を形成するプロセスの途中であって、
前記ボディー部の径の１０ないし５０％に至ったとき、
前記石英るつぼ内の前記原料融液に第１の強度の静磁界
の印加を開始し、その後、前記上部コーン部を形成する
プロセスで、前記ボディー部の径の６０ないし９０％に
至るまで前記第１の強度から静磁界強度を増加させて第
２の静磁界強度とし、前記上部コーン部の残りの部分
と、前記ボディー部を形成するにあたり前記第２の強度
の静磁界を印加した状態とすることを特徴とする単結晶
製造方法が提供される。Further, according to the present invention, the seed crystal is immersed in the raw material melt in the quartz crucible and allowed to adjust, then the seed crystal is pulled up to form a neck portion, and then the single crystal upper cone portion and the body are formed. In the method for producing a single crystal for forming a part,
During the process of forming the upper cone,
When it reaches 10 to 50% of the diameter of the body,
The application of a static magnetic field of a first intensity to the raw material melt in the quartz crucible is started, and then, in the process of forming the upper cone portion, the first magnetic field is reduced to 60 to 90% of the diameter of the body portion. The static magnetic field intensity is increased from the intensity of No. 1 to obtain a second static magnetic field intensity, and the remaining portion of the upper cone portion and the static magnetic field of the second intensity are applied when forming the body portion. A method for producing a single crystal is provided.
【００１２】[0012]
【発明の実施の形態】以下、図面を参照して本発明の実
施の形態を説明する。図１は本発明に係る単結晶製造方
法を実現する単結晶製造装置の一実施形態を示す構成
図、図２は図１の装置による単結晶製造工程を示す説明
図、図３は従来の方法と本発明の方法を比較した説明図
である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a configuration diagram showing an embodiment of a single crystal manufacturing apparatus for realizing a single crystal manufacturing method according to the present invention, FIG. 2 is an explanatory view showing a single crystal manufacturing process using the apparatus of FIG. 1, and FIG. FIG. 4 is an explanatory diagram comparing the method of the present invention with the method of the present invention.
【００１３】図１は一例としてカスプ (Cusp) 型磁界方
式の単結晶製造装置を示している。ワイヤ１（シャフト
でもよい）の先端には種結晶ホルダ２が取り付けられ、
種結晶ホルダ２には種結晶３が取り付けられる。ワイヤ
１は図示省略のワイヤ巻き取りドラム及びワイヤ巻き取
りモータにより上方に巻き取られるように構成され、ま
た、ワイヤ巻き取りドラム及びワイヤ巻き取りモータは
同じく図示省略のドラム回転モータにより回転可能に構
成されている。また、チャンバ１３内には石英るつぼ１
０と、石英るつぼ１０内の多結晶、Ｓｉ融液１１を加熱
するためのヒータ１２が配置され、石英るつぼ１０は回
転可能、かつ上下方向に移動可能に支持されている。FIG. 1 shows an example of a cusp type magnetic field type single crystal manufacturing apparatus. A seed crystal holder 2 is attached to the tip of the wire 1 (which may be a shaft),
The seed crystal 3 is attached to the seed crystal holder 2. The wire 1 is configured to be wound up by a wire winding drum and a wire winding motor (not shown), and the wire winding drum and the wire winding motor are rotatable by a drum rotation motor (not shown). Have been. Further, the quartz crucible 1 is placed in the chamber 13.
0, a heater 12 for heating the polycrystal in the quartz crucible 10 and the Si melt 11 are arranged, and the quartz crucible 10 is supported so as to be rotatable and movable in the vertical direction.
【００１４】チャンバ１３の周りには石英るつぼ１０の
上方において上部コイル１４ａが巻回され、石英るつぼ
１０の下方において下部コイル１４ｂが巻回されてい
る。このような構成によれば、コイル１４ａ、１４ｂに
逆方向の電流を印加することにより、破線で示すように
下方向に向かう縦型磁界と上方向に向かう縦型磁界のカ
スプ型磁界ＣＭを形成することができる。An upper coil 14a is wound around the chamber 13 above the quartz crucible 10, and a lower coil 14b is wound below the quartz crucible 10. According to such a configuration, by applying a current in the opposite direction to the coils 14a and 14b, a cusp-type magnetic field CM of a vertical magnetic field directed downward and a vertical magnetic field directed upward is formed as indicated by a broken line. can do.
【００１５】図２（ａ）は入電からの操業時間、すなわ
ちヒータ１２に電源を投入した後からの経過時間とカス
プ磁場強度の関係を示し、図２（ｂ）は同じく入電から
の操業時間と結晶半径を示している。図１、図２を参照
しながら単結晶の製造方法を説明すると、先ず、チャン
バ１３内を１０torr程度に減圧して新鮮なＡｒ（アルゴ
ン）ガスを流すとともに、ヒータ１２に入電することに
より石英るつぼ１０内の原料多結晶を加熱する。このと
きには図２（ａ）に示すようにコイル１４ａ、１４ｂに
は通電せず、カスプ型磁界ＣＭを発生させない。FIG. 2 (a) shows the relationship between the operating time from the incoming power, that is, the elapsed time after the power is turned on to the heater 12 and the cusp magnetic field strength, and FIG. The crystal radius is shown. The method of manufacturing a single crystal will be described with reference to FIGS. 1 and 2. First, the inside of the chamber 13 is decompressed to about 10 torr and a fresh Ar (argon) gas is flown. The raw material polycrystal in 10 is heated. At this time, as shown in FIG. 2A, no current is supplied to the coils 14a and 14b, and no cusp-type magnetic field CM is generated.
【００１６】そして、ヒータ１２に入電した後７〜８時
間程度が経過して多結晶が溶融すると、ワイヤ１を引き
下げて種結晶３を石英るつぼ１０内のＳｉ融液１１の表
面に対して浸漬させ、なじませ、次いで所定時間の経過
後に種結晶３を比較的速い速度で引き上げることによ
り、種結晶３の下に直径が３〜４ｍｍの小径のネック部
４を形成する。このネック部４は１時間程度で形成し、
次いで引上げ速度を徐々に遅くすることにより上部コー
ン部５を形成する。このとき、図２に示すように上部コ
ーン部５の途中（単結晶ボディー部の径の３０％）が形
成された時点Ａでコイル１４ａ、１４ｂへの通電を開始
し、単結晶ボディー部の径の８０％が形成された時点Ｂ
で強度が最大規定値である３０００ガウスになるように
カスプ型磁界ＣＭを発生させる。すなわち、静磁界の強
度は急激に変化させると、原料結晶の不規則な対流を生
じさせるので、図２のグラフに示されるように、ある程
度時間をかける必要がある。この最大規定値の磁界強度
を継続して上部コーン部５の残りと円筒形のボディー部
６の境界近傍が形成された時点で一定の速度で引き上げ
ることにより円筒形のボディー部６を形成する。When about 7 to 8 hours have passed since the power was supplied to the heater 12 and the polycrystal melted, the wire 1 was pulled down and the seed crystal 3 was immersed in the surface of the Si melt 11 in the quartz crucible 10. The seed crystal 3 is pulled up at a relatively high speed after a lapse of a predetermined time to form a neck portion 4 having a small diameter of 3 to 4 mm below the seed crystal 3. This neck part 4 is formed in about one hour,
Next, the upper cone portion 5 is formed by gradually lowering the pulling speed. At this time, as shown in FIG. 2, at a point A when the middle of the upper cone portion 5 (30% of the diameter of the single crystal body portion) is formed, the energization to the coils 14a and 14b is started, and the diameter of the single crystal body portion is started. B at which 80% of the
A cusp type magnetic field CM is generated so that the intensity becomes 3000 Gauss which is the maximum specified value. That is, when the intensity of the static magnetic field is rapidly changed, irregular convection of the raw material crystal occurs. Therefore, as shown in the graph of FIG. 2, it is necessary to take some time. When the magnetic field strength of the maximum specified value is continued and the vicinity of the boundary between the rest of the upper cone portion 5 and the cylindrical body portion 6 is formed, the cylindrical body portion 6 is formed by pulling up at a constant speed.
【００１７】上記方法により上部コーン部５の途中でカ
スプ型磁界ＣＭの印加を開始した場合、ボディー部６の
結晶品質特に酸素濃度は、従来の方法により全工程にお
いて継続した場合と変わらないが、石英るつぼ１０の温
度は約４０℃低下し、劣化を防止することができた。ま
た、図３はカスプ型磁界の印加を、従来の方法により全
工程において継続した場合と上記方法により上部コーン
部５の途中で印加を開始した場合のトラブル率と単結晶
化率を示している。上記２つの方法により共に１０本の
単結晶を製造したところ、トラブル率は従来の方法によ
れば２．０／本、本発明の方法によれば０．５／本であ
り、また、単結晶化率は従来の方法によれば８０％、本
発明の方法によれば９５％であった。When the application of the cusp-type magnetic field CM is started in the middle of the upper cone portion 5 by the above method, the crystal quality of the body portion 6, particularly the oxygen concentration, is not different from the case where the application is continued in all steps by the conventional method. The temperature of the quartz crucible 10 dropped by about 40 ° C., and deterioration was prevented. FIG. 3 shows the trouble rate and the single crystallization rate when the application of the cusp-type magnetic field is continued in all steps by the conventional method and when the application is started in the middle of the upper cone portion 5 by the above method. . When 10 single crystals were produced by the above two methods, the trouble rate was 2.0 / crystal according to the conventional method and 0.5 / crystal according to the method of the present invention. The conversion was 80% according to the conventional method and 95% according to the method of the present invention.
【００１８】なお、上記実施形態では、静磁場の一例と
してカスプ型磁界を印加したが、代わりに縦型磁場（Ｖ
Ｍ）や横型磁場（ＨＭ）を印加するようにしてもよい。
また、上記磁界の印加や磁界強度の変更などのタイミイ
ングである単結晶ボディー部の径の３０％という値は、
一例であり、単結晶ボディー部６の径の１０〜５０％が
適用可能であり、同様に単結晶ボディー部６の径の８０
％という値も、一例であり、単結晶ボディー部の径の６
０〜９０％が適用可能である。In the above-described embodiment, a cusp-type magnetic field is applied as an example of the static magnetic field.
M) or a horizontal magnetic field (HM) may be applied.
Further, the value of 30% of the diameter of the single crystal body portion, which is the timing for applying the magnetic field or changing the magnetic field strength, is as follows:
For example, 10 to 50% of the diameter of the single crystal body portion 6 is applicable.
The value of% is also an example, and is 6% of the diameter of the single crystal body.
0-90% is applicable.
【００１９】[0019]
【発明の効果】以上説明したように本発明によれば、石
英るつぼ内の融液に対してボディー部の形成時より弱い
強度の静磁場を印加しながら、あるいは無磁界で種結晶
の下に単結晶のネック部を形成し、次いで前記ネック部
の下に磁界を印加して単結晶のコーン部の途中までを形
成し、さらにボディー部を形成するようにしたので、単
結晶が転位したり、石英るつぼが高温化して劣化するこ
とを防止することができる。As described above, according to the present invention, a static magnetic field having a strength lower than that at the time of forming the body portion is applied to the melt in the quartz crucible or a magnetic field is applied below the seed crystal without a magnetic field. The neck portion of the single crystal was formed, and then a magnetic field was applied under the neck portion to form a part of the cone portion of the single crystal, and further the body portion was formed. In addition, it is possible to prevent the quartz crucible from deteriorating due to a high temperature.
【図１】本発明に係る単結晶製造方法を実現する単結晶
製造装置の一実施形態を示す構成図である。FIG. 1 is a configuration diagram showing an embodiment of a single crystal manufacturing apparatus for realizing a single crystal manufacturing method according to the present invention.
【図２】図１の装置による単結晶製造工程を示すグラフ
である。FIG. 2 is a graph showing a single crystal manufacturing process using the apparatus of FIG.
【図３】従来の方法と本発明の方法用いた結果を比較し
た説明図である。FIG. 3 is an explanatory diagram comparing the results obtained by using the conventional method and the method of the present invention.
１ ワイヤ ２ 種結晶ホルダ ３ 種結晶 ４ ネック部 ５ 上部コーン部 ６ ボディー部 １０ 石英るつぼ １１ Ｓｉ融液 １２ ヒータ １３ チャンバ １４ａ、１４ｂ コイル DESCRIPTION OF SYMBOLS 1 Wire 2 seed crystal holder 3 seed crystal 4 neck part 5 upper cone part 6 body part 10 quartz crucible 11 Si melt 12 heater 13 chamber 14a, 14b coil
Claims (6)
行う単結晶製造方法において、原料結晶の溶融から前記
単結晶の上部コーン部の形成途中に至るまでは前記単結
晶のボディー部を形成するときに印加する静磁界の強度
より低い強度の磁界を印加するか、あるいは無磁界とす
ることを特徴とする単結晶製造方法。In a single crystal manufacturing method for pulling a single crystal while applying a static magnetic field, a body portion of the single crystal is formed from the melting of a raw material crystal to the formation of an upper cone portion of the single crystal. A method for producing a single crystal, characterized in that a magnetic field having an intensity lower than the intensity of a static magnetic field applied at the time of applying a magnetic field is applied or a magnetic field is eliminated.
し、得られた原料融液に種結晶を浸漬し、なじませ、そ
の後、種結晶を引き上げてネック部を形成し、次いで単
結晶の上部コーン部とボディー部を形成する単結晶製造
方法において、 前記溶融の開始から前記上部コーン部を形成するプロセ
スの途中までは、前記石英るつぼ内の前記原料に第１の
強度の静磁界を印加し、その後、前記上部コーン部を形
成するプロセスの一部にわたって前記第１の強度から静
磁界強度を増加させて第２の静磁界強度とし、前記ボデ
ィー部を形成するにあたり前記第２の強度の静磁界を印
加した状態とすることを特徴とする単結晶製造方法。2. A raw material crystal in a quartz crucible is heated and melted, a seed crystal is immersed in the obtained raw material melt and allowed to blend in, and then the seed crystal is pulled up to form a neck portion. In the method for producing a single crystal for forming the upper cone portion and the body portion of the above, a static magnetic field of a first strength is applied to the raw material in the quartz crucible from the start of the melting to the middle of the process of forming the upper cone portion. And then increasing the static magnetic field intensity from the first intensity to a second static magnetic field intensity over a portion of the process of forming the upper cone portion to form a second static magnetic field intensity and forming the body portion with the second intensity. A method for producing a single crystal, wherein a static magnetic field is applied.
し、なじませ、その後、種結晶を引き上げてネック部を
形成し、次いで単結晶の上部コーン部とボディー部を形
成する単結晶製造方法において、 前記上部コーン部を形成するプロセス中に前記石英るつ
ぼ内の前記原料融液に第１の強度の静磁界の印加を開始
し、その後、前記上部コーン部を形成するプロセスの一
部にわたって前記第１の強度から静磁界強度を増加させ
て第２の静磁界強度とし、前記ボディー部を形成するに
あたり前記第２の強度の静磁界を印加した状態とするこ
とを特徴とする単結晶製造方法。3. A single crystal in which a seed crystal is immersed and melted in a raw material melt in a quartz crucible, then the seed crystal is pulled up to form a neck portion, and then a single crystal forming an upper cone portion and a body portion of the single crystal. In the manufacturing method, during the process of forming the upper cone portion, a static magnetic field having a first intensity is applied to the raw material melt in the quartz crucible, and thereafter, a part of the process of forming the upper cone portion A single crystal, wherein the static magnetic field intensity is increased from the first intensity to a second static magnetic field intensity, and the static magnetic field of the second intensity is applied when forming the body portion. Production method.
し、得られた原料融液に種結晶を浸漬し、なじませ、そ
の後、種結晶を引き上げてネック部を形成し、次いで単
結晶の上部コーン部とボディー部を形成する単結晶製造
方法において、 前記溶融の開始から前記上部コーン部を形成するプロセ
スの途中であって、前記ボディー部の径の１０ないし５
０％に至るまでは、前記石英るつぼ内の前記原料に第１
の強度の静磁界を印加し、その後、前記上部コーン部を
形成するプロセスで、前記ボディー部の径の６０ないし
９０％に至るまで前記第１の強度から静磁界強度を増加
させて、第２の静磁界強度とし、前記上部コーン部の残
りの部分と、前記ボディー部を形成するにあたり前記第
２の強度の静磁界を印加した状態とすることを特徴とす
る単結晶製造方法。4. A raw material crystal in a quartz crucible is heated and melted, a seed crystal is immersed in the obtained raw material melt, and is blended. Thereafter, the seed crystal is pulled up to form a neck portion. A single crystal manufacturing method for forming the upper cone portion and the body portion, wherein the process of forming the upper cone portion from the start of the melting is in the middle of the process for forming the upper cone portion, and the diameter of the body portion is 10 to 5;
0% of the raw material in the quartz crucible
And then increasing the static magnetic field intensity from the first intensity up to 60 to 90% of the diameter of the body portion in the process of forming the upper cone portion, Wherein the static magnetic field of the second strength is applied to form the remaining portion of the upper cone portion and the body portion.
し、なじませ、その後、種結晶を引き上げてネック部を
形成し、次いで単結晶の上部コーン部とボディー部を形
成する単結晶製造方法において、 前記上部コーン部を形成するプロセスの途中であって、
前記ボディー部の径の１０ないし５０％に至ったとき、
前記石英るつぼ内の前記原料融液に第１の強度の静磁界
の印加を開始し、その後、前記上部コーン部を形成する
プロセスで、前記ボディー部の径の６０ないし９０％に
至るまで前記第１の強度から静磁界強度を増加させて第
２の静磁界強度とし、前記上部コーン部の残りの部分
と、前記ボディー部を形成するにあたり前記第２の強度
の静磁界を印加した状態とすることを特徴とする単結晶
製造方法。5. A single crystal in which a seed crystal is immersed in a raw material melt in a quartz crucible and is allowed to blend in, then the seed crystal is pulled up to form a neck portion, and then a single crystal forming an upper cone portion and a body portion of the single crystal. In the manufacturing method, during the process of forming the upper cone portion,
When it reaches 10 to 50% of the diameter of the body,
The application of a static magnetic field of a first intensity to the raw material melt in the quartz crucible is started, and then, in the process of forming the upper cone portion, the first magnetic field is reduced to 60 to 90% of the diameter of the body portion. The static magnetic field intensity is increased from the intensity of No. 1 to obtain a second static magnetic field intensity, and the remaining portion of the upper cone portion and the static magnetic field of the second intensity are applied when forming the body portion. A method for producing a single crystal, comprising:
型磁界か、単結晶の軸に平行な縦型磁界か、単結晶の軸
に平行な方向の異なるカスプ磁界かのいずれかである請
求項１ないし５のいずれか１つに記載の単結晶製造方
法。6. The static magnetic field is either a horizontal magnetic field orthogonal to the axis of the single crystal, a vertical magnetic field parallel to the axis of the single crystal, or a cusp magnetic field having a different direction parallel to the axis of the single crystal. The method for producing a single crystal according to any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9678497A JPH10279399A (en) | 1997-03-31 | 1997-03-31 | Production of single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9678497A JPH10279399A (en) | 1997-03-31 | 1997-03-31 | Production of single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10279399A true JPH10279399A (en) | 1998-10-20 |
Family
ID=14174268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9678497A Withdrawn JPH10279399A (en) | 1997-03-31 | 1997-03-31 | Production of single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10279399A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100483450B1 (en) * | 2001-01-18 | 2005-04-15 | 실트로닉 아게 | Process and apparatus for producing a silicon single crystal |
| US8795432B2 (en) | 2007-05-30 | 2014-08-05 | Sumco Corporation | Apparatus for pulling silicon single crystal |
| JP2023535079A (en) * | 2020-07-24 | 2023-08-15 | グローバルウェーハズ カンパニー リミテッド | Method for producing monocrystalline silicon ingot by horizontal magnetic field Czochralski |
-
1997
- 1997-03-31 JP JP9678497A patent/JPH10279399A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100483450B1 (en) * | 2001-01-18 | 2005-04-15 | 실트로닉 아게 | Process and apparatus for producing a silicon single crystal |
| US8795432B2 (en) | 2007-05-30 | 2014-08-05 | Sumco Corporation | Apparatus for pulling silicon single crystal |
| JP2023535079A (en) * | 2020-07-24 | 2023-08-15 | グローバルウェーハズ カンパニー リミテッド | Method for producing monocrystalline silicon ingot by horizontal magnetic field Czochralski |
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